U.S. patent application number 11/519243 was filed with the patent office on 2007-01-25 for semiconductor processing method and field effect transistor.
Invention is credited to Salman Akram, Akram Ditali.
Application Number | 20070020868 11/519243 |
Document ID | / |
Family ID | 36951749 |
Filed Date | 2007-01-25 |
United States Patent
Application |
20070020868 |
Kind Code |
A1 |
Akram; Salman ; et
al. |
January 25, 2007 |
Semiconductor processing method and field effect transistor
Abstract
A method of forming a transistor gate includes forming a gate
oxide layer over a semiconductive substrate. Chlorine is provided
within the gate oxide layer. A gate is formed proximate the gate
oxide layer. In another method, a gate and a gate oxide layer are
formed in overlapping relation, with the gate having opposing edges
and a center therebetween. At least one of chlorine or fluorine is
concentrated in the gate oxide layer within the overlap more
proximate at least one of the gate edges than the center.
Preferably, the central region is substantially undoped with
fluorine and chlorine. The chlorine and/or fluorine can be provided
by forming sidewall spacers proximate the opposing lateral edges of
the gate, with the sidewall spacers comprising at least one of
chlorine or fluorine. The spacers are annealed at a temperature and
for a time effective to diffuse the fluorine or chlorine into the
gate oxide layer to beneath the gate. Transistors and transistor
gates fabricated according to the above and other methods are
disclosed. Further, a transistor includes a semiconductive material
and a transistor gate having gate oxide positioned therebetween. A
source is formed laterally proximate one of the gate edges and a
drain is formed laterally proximate the other of the gate edges.
First insulative spacers are formed proximate the gate edges, with
the first insulative spacers being doped with at least one of
chlorine or fluorine. Second insulative spacers formed over the
first insulative spacers.
Inventors: |
Akram; Salman; (Boise,
ID) ; Ditali; Akram; (Boise, ID) |
Correspondence
Address: |
WELLS ST. JOHN P.S.
601 W. FIRST AVENUE, SUITE 1300
SPOKANE
WA
99201
US
|
Family ID: |
36951749 |
Appl. No.: |
11/519243 |
Filed: |
September 11, 2006 |
Related U.S. Patent Documents
|
|
|
|
|
|
Application
Number |
Filing Date |
Patent Number |
|
|
09292132 |
Apr 14, 1999 |
7105411 |
|
|
11519243 |
Sep 11, 2006 |
|
|
|
08993663 |
Dec 18, 1997 |
|
|
|
09292132 |
Apr 14, 1999 |
|
|
|
Current U.S.
Class: |
438/303 ;
257/E21.193; 257/E21.247; 257/E21.334; 257/E29.266 |
Current CPC
Class: |
H01L 21/3115 20130101;
H01L 29/6656 20130101; H01L 21/265 20130101; H01L 29/6659 20130101;
H01L 29/7833 20130101; H01L 29/512 20130101; H01L 21/28167
20130101 |
Class at
Publication: |
438/303 |
International
Class: |
H01L 21/336 20060101
H01L021/336 |
Claims
1. A method of forming a transistor gate comprising: forming a gate
oxide layer over a semiconductive substrate; providing chlorine
within the gate oxide layer; and forming a gate proximate the gate
oxide layer.
2. The method of claim 1 wherein the chlorine is provided after
forming the gate.
3. The method of claim 1 wherein the chlorine is provided before
forming the gate.
4. The method of claim 1 wherein the chlorine is provided in the
gate oxide layer to a concentration of from about 1.times.10.sup.19
atoms/cm.sup.3 to about 1.times.10.sup.21 atoms/cm.sup.3.
5. The method of claim 1 wherein the gate comprises opposing
lateral edges and a central region therebetween, the chlorine being
provided within the gate oxide layer to a greater concentration
proximate at least one of the gate edges than in the central
region.
6. A method of forming a transistor gate comprising: forming a gate
and a gate oxide layer in overlapping relation, the gate having
opposing edges and a center therebetween; and concentrating at
least one of chlorine or fluorine in the gate oxide layer within
the overlap more proximate at least one of the gate edges than the
center.
7. The method of claim 6 wherein the concentrating comprises
concentrating fluorine.
8. The method of claim 6 wherein the gate is formed to have a gate
width between the edges of 0.25 micron or less, the concentrating
forming at least one concentration region in the gate oxide which
extends laterally inward from the at least one gate edge no more
than about 500 Angstroms.
9. The method of claim 6 wherein the concentrating comprises
diffusion doping.
10. The method of claim 6 wherein the concentrating comprises ion
implanting.
11. A method of forming a transistor gate comprising: forming a
gate and a gate oxide layer in overlapping relation, the gate
having opposing edges and a central region therebetween; and doping
the gate oxide layer within the overlap with at least one of
chlorine or fluorine proximate the opposing gate edges and leaving
the central region substantially undoped with chlorine and
fluorine.
12. The method of claim 11 wherein the doping comprises ion
implanting.
13. The method of claim 11 wherein the doping provides a dopant
concentration in the gate oxide layer proximate the edges from
about 1.times.10.sup.19 atoms/cm.sup.3 to about 1.times.10.sup.21
atoms/cm.sup.3.
14. A method of forming a transistor gate comprising the following
sequential steps: forming a gate over a gate oxide layer, the gate
having opposing edges; and angle ion implanting at least one of
chlorine or fluorine into the gate oxide layer beneath the edges of
the gate.
15. The method of claim 14 wherein the angle is between from about
0.5 degrees to about 10 degrees from perpendicular the gate oxide
layer.
16. The method of claim 14 further comprising annealing the gate
oxide layer after the implanting.
17. A method of forming a transistor gate comprising the following
sequential steps: forming a gate over a gate oxide layer, the gate
having opposing lateral edges; and diffusion doping at least one of
chlorine or fluorine into the gate oxide layer beneath the gate
from laterally outward of the gate edges.
18. The method of claim 17 wherein the doping provides a dopant
concentration in the gate oxide layer proximate the edges from
about 1.times.10.sup.19 atoms/cm.sup.3 to about 1.times.10.sup.21
atoms/cm.sup.3.
19. The method of claim 17 wherein the doping provides a pair of
spaced and opposed concentration regions in the gate oxide which
extend laterally inward from the gate edges no more than about 500
Angstroms.
20. The method of claim 17 wherein the doping provides a pair of
spaced and opposed concentration regions in the gate oxide which
extend laterally inward from the gate edges no more than about 500
Angstroms, the concentration regions having an average dopant
concentration in the gate oxide layer proximate the edges from
about 1.times.10.sup.19 atoms/cm.sup.3 to about 1.times.10.sup.21
atoms/cm.sup.3.
21. The method of claim 20 wherein the gate oxide layer between the
concentration regions is substantially undoped with chlorine and
fluorine.
22. A method of forming a transistor gate comprising the following
steps: forming a gate over a gate oxide layer, the gate having
opposing lateral edges; forming sidewall spacers proximate the
opposing lateral edges, the sidewall spacers comprising at least
one of chlorine or fluorine; and annealing the spacers at a
temperature and for a time period effective to diffuse the fluorine
or chlorine from the spacers into the gate oxide layer to beneath
the gate.
23. The method of claim 22 wherein after the annealing, stripping
the spacers from the edges.
24. The method of claim 22 comprising forming the spacers to cover
less than all of the lateral edges.
25. The method of claim 22 comprising forming the spacers to
overlie the gate oxide layer.
26. The method of claim 22 comprising forming the spacers to not
overlie any of the gate oxide layer.
27. The method of claim 22 further comprising: depositing a layer
of insulating material over the gate and the sidewall spacers; and
anisotropically etching the layer of insulating material to form
spacers over the sidewall spacers.
28. The method of claim 27 wherein the annealing occurs before the
depositing.
29. The method of claim 27 wherein the annealing occurs after the
depositing.
30. The method of claim 22 further comprising: providing gate oxide
layer material laterally outward of the gate edges; etching only
partially into the gate oxide layer laterally outward of the gate
edges; and forming said sidewall spacers over the etched gate oxide
layer laterally outward of the gate edges.
31. A transistor comprising: a semiconductive material and a
transistor gate having gate oxide positioned therebetween, the gate
having opposing gate edges and a central region therebetween; a
source formed laterally proximate one of the gate edges and a drain
formed laterally proximate the other of the gate edges; and
chlorine within the gate oxide layer between the semiconductive
material and the transistor gate.
32. The transistor of claim 31 wherein the chlorine is provided in
the gate oxide layer to a concentration of from about
1.times.10.sup.19 atoms/cm.sup.3 to about 1.times.10.sup.21
atoms/cm.sup.3.
33. The transistor of claim 31 wherein the chlorine is provided
within the gate oxide layer to a greater concentration proximate at
least one of the gate edges than in the central region.
34. The transistor of claim 31 wherein the chlorine is provided
within the gate oxide layer to a greater concentration proximate
the other gate edge than in the central region.
35. The transistor of claim 31 wherein the chlorine is provided
within the gate oxide layer to a greater concentration proximate
both gate edges than in the central region.
36. The transistor of claim 31 wherein the central region is
substantially void of chlorine.
37. A transistor comprising: a semiconductive material and a
transistor gate having gate oxide positioned therebetween, the gate
having opposing gate edges and a central region therebetween; a
source formed laterally proximate one of the gate edges and a drain
formed laterally proximate the other of the gate edges; and at
least one of fluorine or chlorine being concentrated in the gate
oxide layer between the semiconductive material and the transistor
gate more proximate at least one of the gate edges than the central
region.
38. The transistor of claim 37 wherein fluorine is
concentrated.
39. The transistor of claim 37 wherein chlorine is
concentrated.
40. The transistor of claim 37 wherein the central region of the
gate oxide layer is substantially void of chlorine and
fluorine.
41. The transistor of claim 37 wherein the concentrated chlorine or
fluorine is provided in the gate oxide layer to a concentration of
from about 1.times.10.sup.19 atoms/cm.sup.3 to about
1.times.10.sup.21 atoms/cm.sup.3.
42. The transistor of claim 37 wherein the concentrated chlorine or
fluorine is provided in the gate oxide layer to a concentration of
from about 1.times.10.sup.19 atoms/cm.sup.3 to about
1.times.10.sup.21 atoms/cm.sup.3, and wherein the central region of
the gate oxide layer is substantially void of chlorine and
fluorine.
43. The transistor of claim 37 wherein the at least one of fluorine
or chlorine is concentrated in the gate oxide layer more proximate
both gate edges than in the central region.
44. The transistor of claim 37 wherein the at least one of fluorine
or chlorine is concentrated in the gate oxide layer more proximate
at least the other gate edge.
45. The transistor of claim 37 wherein the gate is formed to have a
gate width between the edges of 0.25 micron or less, the
concentrated at least one of fluorine or chlorine extending
laterally inward from the at least one gate edge no more than about
500 Angstroms.
46. The transistor of claim 37 wherein the gate is formed to have a
gate width between the edges of 0.25 micron or less, the
concentrated at least one of fluorine or chlorine extending
laterally inward from the at least one gate edge no more than about
500 Angstroms with an average concentration of from about
1.times.10.sup.19 atoms/cm.sup.3 to about 1.times.10.sup.21
atoms/cm.sup.3.
47. A transistor comprising: a semiconductive material and a
transistor gate having gate oxide positioned therebetween, the gate
having opposing gate edges; a source formed laterally proximate one
of the gate edges and a drain formed laterally proximate the other
of the gate edges; first insulative spacers formed proximate the
gate edges, the first insulative spacers being doped with at least
one of chlorine or fluorine; and second insulative spacers formed
over the first insulative spacers.
48. The transistor of claim 47 wherein the second insulative
spacers at least as initially provided are substantially undoped
with either chlorine or fluorine.
49. The transistor of claim 47 further comprising at least one of
chlorine or fluorine within the gate oxide layer proximate the gate
edges.
50. The transistor of claim 47 wherein the gate oxide layer
includes a central region between the opposing gate edges, and
further comprising at least one of chlorine or fluorine within the
gate oxide layer proximate the gate edges, the central region being
substantially void of chlorine and fluorine.
Description
TECHNICAL FIELD
[0001] This invention relates to methods of forming transistor
gates and to transistor constructions.
BACKGROUND OF THE INVENTION
[0002] As transistor gate dimensions are reduced and the supply
voltage remains constant, the lateral field generated in MOS
devices increases. As the electric field becomes strong enough, it
gives rise to so-called "hot-carrier" effects in MOS devices. This
has become a significant problem in NMOS devices with channel
lengths smaller than 1.5 micron, and in PMOS devices with
sub-micron channel lengths.
[0003] High electric fields cause the electrons in the channel to
gain kinetic energy, with their energy distribution being shifted
to a much higher value than that of electrons which are in thermal
equilibrium within the lattice. The maximum electric field in a
MOSFET device occurs near the drain during saturated operation,
with the hot electrons thereby becoming hot near the drain edge of
the channel. Such hot electrons can cause adverse effects in the
device.
[0004] First, those electrons that acquire greater than or equal to
1.5 eV of energy can lose it via impact ionization, which generates
electron-hole pairs. The total number of electron-hole pairs
generated by impact ionization is exponentially dependent on the
reciprocal of the electric field. In the extreme, this
electron-hole pair generation can lead to a form of avalanche
breakdown. Second, the hot holes and electrons can overcome the
potential energy barrier between the silicon and the silicon
dioxide, thereby causing hot carriers to become injected into the
gate oxide. Each of these events brings about its own set of
repercussions.
[0005] Device performance degradation from hot electron effects
have been in the past reduced by a number of techniques. One
technique is to reduce the voltage applied to the device, and thus
decrease in the electric field. Further, the time the device is
under the voltage stress can be shortened, for example, by using a
lower duty cycle and clocked logic. Further, the density of
trapping sites in the gate oxide can be reduced through the use of
special processing techniques. Also, the use of lightly doped
drains and other drain engineering design techniques can be
utilized.
[0006] Further, it has been recognized that fluorine-based oxides
can improve hot-carrier immunity by lifetime orders of magnitude.
This improvement is understood to mainly be due to the presence of
fluorine at the Si/SiO.sub.2 interface reducing the number of
strained Si/O bonds, as fewer sites are available for defect
formation. Improvements at the Si/SiO.sub.2 interface reduces
junction leakage, charge trapping and interface trap generation.
However, optimizing the process can be complicated. In addition,
electron-trapping and poor leakage characteristics can make such
fluorine-doped oxides undesirable and provide a degree of
unpredictability in device operation. Use of fluorine across the
entire channel length has been reported in, a) K. Ohyu et al.,
"Improvement of SiO.sub.2/Si Interface Properties by Fluorine
Implantation"; and b) P. J. Wright, et al., "The Effect of Fluorine
On Gate Dielectric Properties".
SUMMARY OF THE INVENTION
[0007] In one implementation, a method of forming a transistor
includes forming a gate oxide layer over a semiconductive
substrate. Chlorine is provided within the gate oxide layer. A gate
is formed proximate the gate oxide layer. In another aspect, a gate
and a gate oxide layer are formed in overlapping relation, with the
gate having opposing edges and a center therebetween. At least one
of chlorine or fluorine is concentrated in the gate oxide layer
within the overlap more proximate at least one of the gate edges
than the center. The center is preferably substantially void of
either fluorine of chlorine. In one implementation, at least one of
chlorine or flouring is angle ion implanted to beneath the edges of
the gate. In another, sidewall spacers are formed proximate the
opposing lateral edges, with the sidewall spacers comprising at
least one of chlorine or fluorine. The spacers are annealed at a
temperature and for a time period effective to diffuse the fluorine
or chlorine from the spacers into the gate oxide layer to beneath
the gate. Transistors fabricated by such methods, and other
methods, are also contemplated.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] Preferred embodiments of the invention are described below
with reference to the following accompanying drawings.
[0009] FIG. 1 is a sectional view of a semiconductor wafer fragment
in accordance with the invention.
[0010] FIG. 2 is a sectional view of an alternate semiconductor
wafer fragment at one step of a method in accordance with the
invention.
[0011] FIG. 3 is a view of the FIG. 2 wafer at a processing step
subsequent to that shown by FIG. 2.
[0012] FIG. 4 is a sectional view of another semiconductor wafer
fragment at an alternate processing step in accordance with the
invention.
[0013] FIG. 5 is a view of the FIG. 4 wafer fragment at a
processing step subsequent to that depicted by FIG. 4.
[0014] FIG. 6 is a view of the FIG. 4 wafer fragment at a
processing step subsequent to that depicted by FIG. 5.
[0015] FIG. 7 is a view of the FIG. 4 wafer at an alternate
processing step to that depicted by FIG. 6.
[0016] FIG. 8 is a sectional view of another semiconductor wafer
fragment at another processing step in accordance with the
invention.
[0017] FIG. 9 is a view of the FIG. 8 wafer at a processing step
subsequent to that depicted by FIG. 8.
[0018] FIG. 10 is a sectional view of still another embodiment
wafer fragment at a processing step in accordance with another
aspect of the invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0019] This disclosure of the invention is submitted in furtherance
of the constitutional purposes of the U.S. Patent Laws "to promote
the progress of science and useful arts" (Article 1, Section
8).
[0020] A semiconductor wafer fragment in process is indicated in
FIG. 1 with reference numeral 10. Such comprises a bulk
semiconductive substrate 12 which supports field oxide regions 14
and a gate oxide layer 16. In the context of this document, the
term "semiconductive substrate" is defined to mean any construction
comprising semiconductive material, including, but not limited to,
bulk semiconductive materials such as a semiconductive wafer
(either alone or in assemblies comprising other materials thereon),
and semiconductive material layers (either alone or in assemblies
comprising other materials). The term "substrate" refers to any
supporting structure, including, but not limited to, the
semiconductive substrates described above.
[0021] A gate structure 18 is formed proximate gate oxide 16, such
as in an overlapping relationship. A top gated construction is
shown, although bottom gated constructions could also be utilized.
Gate construction 18 is comprised of a first conductive material
portion 20 (i.e., conductively doped polysilicon), and a higher
conductive layer 22 (i.e., a silicide such as WSi.sub.x). An
insulating cap 24 is provided over layer 22, with SiO.sub.2 and
Si.sub.3N.sub.4 being example materials. For purposes of the
continuing discussion, gate construction 18 defines opposing gate
edges 26 and 28, and a center 30 therebetween. The invention is
believed to have its greatest impact where the gate width between
edges 26 and 28 (i.e., the channel length) is 0.25 micron or
less.
[0022] Chlorine is provided within gate oxide layer 16 as indicated
in the figure by the hash marks, and thus between semiconductive
material of substrate 12 and transistor gate 18. Chlorine can be
provided before or after formation of gate construction 18. For
example, the chlorine in layer 16 can be provided by gas diffusion,
ion implantation or in situ as initially deposited or formed.
Preferred dopant concentration of the chlorine within oxide layer
16 is from about 1.times.10.sup.19 atoms/cm.sup.3 to about
1.times.10.sup.21 atoms/cm.sup.3. A source, a drain, and insulating
sidewall spacers over gate construction 18 can be provided.
Chlorine based gate oxides can improve hot-carrier immunity. The
chlorine present at the Si/SiO.sub.2 interface reduces the number
of strained Si/O bonds, as fewer sites are available for defect
formation. Improvements at the Si/SiO.sub.2 interface will reduce
junction leakage, the probability of charge trapping and interface
state generation, thus improving device characteristics.
[0023] A second embodiment is described with reference to FIGS. 2
and 3. Like numerals from the first described embodiment are
utilized when appropriate, with differences being indicated by the
suffix "b" or with different numerals. Wafer fragment 10b ideally
comprises a gate oxide layer 16b which is initially provided to be
essentially undoped with chlorine. The FIG. 2 construction is
subjected to angle ion implanting (depicted with arrows 32) to
implant at least one of chlorine or fluorine into gate oxide layer
16b beneath edges 26 and 28 of gate 18. A preferred angle for the
implant is between from about 0.5.degree. to about 10.degree. from
perpendicular to gate oxide layer 16b. An example energy range is
from 20 to 50 keV, with 50 keV being a preferred example. An
example implant species is SiF.sub.3, to provide a fluorine dose of
from about 1.times.10.sup.15 atoms/cm.sup.2 to about
3.times.1.sup.15 atoms/cm.sup.2, with 2.times.10.sup.15
atoms/cm.sup.2 being a specific example. The resultant preferred
implanted dopant concentration within layer 16b is from about
1.times.10.sup.19 atom/cm.sup.3 to about 1.times.10.sup.21
atoms/cm.sup.3.
[0024] The concentrated regions from such preferred processing will
extend inwardly within gate oxide layer 16b relative to gate edges
26 and 28 a preferred distance of from about 50 Angstroms to about
500 Angstroms. Such is exemplified in the Figures by boundaries 34.
In the physical product, such boundaries would not physically
exist, but rather the implant concentration would preferably
appreciably drop off over a very short distance of the channel
length.
[0025] Annealing is preferably subsequently conducted to repair
damage to the gate oxide layer caused by the ion implantation.
Example conditions include exposure of the substrate to a
temperature of from 700.degree. C. to 1000.degree. C. in an inert
atmosphere such as N.sub.2 at a pressure from 100 mTorr-760 Torr
for from about 20 minutes to 1 hour. Such can be conducted as a
dedicated anneal, or in conjunction with other wafer processing
whereby such conditions are provided. Such will also have the
effect of causing encroachment or diffusion of the implanted atoms
to provide barriers 34 to extend inwardly from edges 26 and 28
approximately from about 50 Angstroms to about 500 Angstroms.
[0026] Such provides but one example of doping and concentrating at
least one of chlorine or fluorine in the gate oxide layer within
the overlap region between the semiconductive material and the gate
more proximate the gate edges 26 and 28 than gate center 30. Such
preferably provides a pair of spaced and opposed concentration
regions in the gate oxide layer, with the area between the
concentration regions being substantially undoped with chlorine and
fluorine. In the context of this document, "substantially undoped"
and "substantially void" means having a concentration range of less
than or equal to about 1.times.10.sup.16 atoms/cm.sup.3.
[0027] Referring to FIG. 3, subsequent processing is illustrated
whereby insulative sidewall spacers 36 are formed over the gate
edges. A source region 38 and a drain region 40, as well as LDD
regions 42, are provided.
[0028] The FIGS. 2-3 embodiment illustrated exemplary provision of
concentrated regions more proximate the gate edges by angle ion
implanting and subsequent anneal. Alternate processing is described
with other embodiments with reference to FIGS. 4-10. A first
alternate embodiment is shown in FIGS. 4-6, with like numerals from
the first described embodiment being utilized where appropriate,
with differences being indicated with the suffix "c" or with
different numerals.
[0029] Wafer fragment 10c is shown at a processing step subsequent
to that depicted by FIG. 1 (however preferably with no chlorine
provided in the gate oxide layer). The gate oxide material of layer
16c is etched substantially selective relative to silicon to remove
oxide thereover, as shown. A layer of oxide to be used for spacer
formation is thereafter deposited over substrate 12 and gate
construction 18c. Such is anisotropically etched to form insulative
sidewall spacers 44 proximate opposing lateral edges 26 and 28 of
gate 18. Preferably as shown, such spacers are formed to cover less
than all of the conductive material of lateral edges 26 and 28 of
gate 18. Further in this depicted embodiment, such spacers 44 do
not overlie any gate oxide material over substrate 12, as such has
been completed etched away.
[0030] Spacers 44 are provided to be doped with at least one of
chlorine or fluorine, with an example dopant concentration being
1.times.10.sup.21 atoms/cm.sup.3. Such doping could be provided in
any of a number of ways. For example, the deposited insulating
layer from which spacers 44 are formed, for example SiO.sub.2,
could be in situ doped during its formation to provide the desired
fluorine and/or chlorine concentration. Alternately, such could be
gas diffusion doped after formation of such layer, either before or
after the anisotropic etch to form the spacers. Further
alternately, and by way of example only, ion implanting could be
conducted to provide a desired dopant concentration within spacers
44.
[0031] Referring to FIG. 5, spacers 44 are annealed at a
temperature and for a time period effective to diffuse the dopant
fluorine or chlorine from such spacers into gate oxide layer 16c
beneath gate 18. Sample annealing conditions are as described above
with respect to repair of ion implantation damage. Such can be
conducted as a dedicated anneal, or as a byproduct of subsequent
wafer processing wherein such conditions are inherently provided.
Such provides the illustrated concentration regions 46 proximate
lateral edges 26 and 28 with gate oxide material therebetween
preferably being substantially undoped with either chlorine or
fluorine.
[0032] Referring to FIG. 6, another layer of insulating material
(i.e., silicon nitride or silicon dioxide) is deposited over gate
18 and sidewall spacers 44. Such is anisotropically etched to form
spacers 48 about spacers 44 and gate construction 18. Preferably,
such spacer 48 formation occurs after annealing to cause effective
diffusion doping from spacers 44 into gate oxide layer 16c.
[0033] Alternate processing with respect to FIG. 5 is shown in FIG.
7. Like numerals from the first described embodiment are utilized
where appropriate with differences being indicated with the suffix
"d". Here in a wafer fragment 10d, doped spacers 44 have been
stripped from the substrate prior to provision of spacers 48.
Accordingly, diffusion doping of chlorine or fluorine from spacers
44 would be conducted prior to such stripping in this embodiment.
The FIG. 7 processing is believed to be preferred to that of FIG.
6, such that the chlorine or fluorine dopant atoms won't have any
adverse effect on later or other processing steps in ultimate
device operation or fabrication. For example, chlorine and fluorine
may not be desired in the preferred polysilicon material of the
gate.
[0034] A next alternate embodiment is described with reference to
FIGS. 8 and 9. Like numerals from the first described embodiment
are utilized where appropriate, with differences being indicated
with the suffix "e" or with different numerals. FIG. 8 illustrates
a wafer fragment 10e which is similar to that depicted by FIG. 4
with the exception that gate oxide layer 16e has not been stripped
or etched laterally outward of gate edges 26 and 28 prior to spacer
44e formation. Accordingly in such embodiment, spacers 44e are
formed to overlie gate oxide layer 16e.
[0035] Referring to FIG. 9, such spacers are subjected to
appropriate annealing conditions as described above to cause
diffusion doping of the chlorine or fluorine into the gate oxide
layer 16e and beneath gate 18 from laterally outward of gate edges
26 and 28. This embodiment is not believed to be as preferred as
those depicted by FIGS. 4-7, in that the dopant must diffuse both
initially downwardly into gate oxide layer 16 and then laterally to
beneath gate edges 26 and 28.
[0036] Yet another alternate embodiment is described with reference
to FIG. 10. Like numerals from the first described embodiment are
utilized where appropriate, with differences being indicated with
the suffix "f". FIG. 10 is similar to the FIGS. 8-9 embodiment.
However, gate oxide layer 16f is etched only partially into
laterally outward of gate edges 26 and 28, thus reducing its
thickness. Chlorine and/or fluorine doped spacers 44f are
subsequently formed as described above. A diffusion annealing is
then conducted. In comparison to the FIG. 8 embodiment, the FIG. 10
embodiment provides a portion of gate oxide layer 16f to be
laterally outwardly exposed, such that dopant diffusion to beneath
gate edges 26 and 28 is facilitated.
[0037] Provision of fluorine and/or chlorine at the edges, with a
central region therebetween being substantially void of same,
reduces or eliminates any adverse affect chlorine and/or fluorine
would have at the center of the gate where hot electron carrier
effects are not as prominent.
[0038] The above-described embodiments preferably place doped
chlorine or fluorine proximate both gate edges 26 and 28 within the
respective gate oxide layers. Alternately, such greater
concentration could be provided proximate only one of the gate
edges, such as the drain edge where the hot carrier effects are
most problematic.
[0039] In compliance with the statute, the invention has been
described in language more or less specific as to structural and
methodical features. It is to be understood, however, that the
invention is not limited to the specific features shown and
described, since the means herein disclosed comprise preferred
forms of putting the invention into effect. The invention is,
therefore, claimed in any of its forms or modifications within the
proper scope of the appended claims appropriately interpreted in
accordance with the doctrine of equivalents.
* * * * *