U.S. patent application number 11/455648 was filed with the patent office on 2006-12-21 for light emitting diode package with metal reflective layer and method of manufacturing the same.
This patent application is currently assigned to SAMSUNG ELECTRO-MECHANICS CO., LTD.. Invention is credited to Kyung Taeg Han, Seong Yeon Han, Seon Goo Lee, Jung Kyu Park.
Application Number | 20060284207 11/455648 |
Document ID | / |
Family ID | 37572540 |
Filed Date | 2006-12-21 |
United States Patent
Application |
20060284207 |
Kind Code |
A1 |
Park; Jung Kyu ; et
al. |
December 21, 2006 |
Light emitting diode package with metal reflective layer and method
of manufacturing the same
Abstract
The invention relates to an LED package having a metal
reflective layer for focusing and emitting light through a side of
the package, and a manufacturing method of the same. The LED
package includes a substrate with an electrode formed thereon, a
light emitting diode chip disposed on the substrate, and an
encapsulant covering the LED chip and the substrate to protect the
LED chip. The LED package also includes a metal reflective layer
surrounding side surfaces of the encapsulant to form a light
transmitting surface on a top surface of the encapsulant. The
invention minimizes light loss, improves luminance, can be
mass-produced as a PCB type, and adopts EMC transfer molding to
minimize irregular color distribution, thereby improving optical
quality.
Inventors: |
Park; Jung Kyu; (Seoull,
KR) ; Lee; Seon Goo; (Kyungki-do, KR) ; Han;
Kyung Taeg; (Hwasung, KR) ; Han; Seong Yeon;
(Suwon, KR) |
Correspondence
Address: |
MCDERMOTT WILL & EMERY LLP
600 13TH STREET, N.W.
WASHINGTON
DC
20005-3096
US
|
Assignee: |
SAMSUNG ELECTRO-MECHANICS CO.,
LTD.
|
Family ID: |
37572540 |
Appl. No.: |
11/455648 |
Filed: |
June 20, 2006 |
Current U.S.
Class: |
257/99 ;
257/E33.072 |
Current CPC
Class: |
H01L 2224/48091
20130101; H01L 2224/73204 20130101; H01L 2924/15787 20130101; H01L
2224/48091 20130101; H01L 33/486 20130101; H01L 2924/12041
20130101; H01L 2924/00014 20130101; H01L 2924/00 20130101; H01L
2924/00 20130101; H01L 2924/00 20130101; H01L 2924/12041 20130101;
H01L 2924/181 20130101; H01L 2924/15787 20130101; H01L 2224/48247
20130101; H01L 33/60 20130101; H01L 2924/181 20130101; H01L
2224/48227 20130101; H01L 24/97 20130101 |
Class at
Publication: |
257/099 |
International
Class: |
H01L 33/00 20060101
H01L033/00 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 20, 2005 |
KR |
10-2005-0053163 |
Claims
1. A light emitting diode package for emitting light from a light
emitting diode chip in one direction, comprising: a substrate with
an electrode formed thereon; a light emitting diode chip disposed
on the substrate; an encapsulant covering the LED chip and the
substrate to protect the LED chip; and a metal reflective layer
surrounding side surfaces of the encapsulant to form a light
transmitting surface on a top surface of the encapsulant.
2. The light emitting diode package according to claim 1, wherein
the metal reflective layer is formed by depositing or plating metal
selected from a group consisting of Al, Au, Ag, Ni, W, Ti and
Pt.
3. The light emitting diode package according to claim 1, wherein
the substrate comprises a printed circuit board or a ceramic
substrate with an electrode formed thereon.
4. The light emitting diode package according to claim 1, wherein
the light transmitting surface is disposed in front and in parallel
with a plane where the light emitting diode chip is disposed.
5. The light emitting diode package according to claim 1, wherein
the encapsulant is made of epoxy molding compound with phosphor
mixed and uniformly dispersed therein.
6. A method of manufacturing a light emitting diode package for
emitting light from a light emitting diode chip in one direction,
comprising steps of: providing a substrate with an electrode formed
thereon; disposing a light emitting diode chip on the substrate;
forming an encapsulant on the light emitting diode chip and the
substrate; cutting the encapsulant; and forming a reflective layer
on the encapsulant.
7. The method according to claim 6, wherein the step of forming an
encapsulant comprises Epoxy Molding Compound (EMC) transfer molding
of transparent epoxy molding compound with phosphor mixed
therein.
8. The method according to claim 6, wherein the step of cutting the
encapsulant comprises dicing or etching only the encapsulant to
obtain a desired form of encapsulant for the light emitting diode
chip, and exposing a pattern electrode plated on the substrate.
9. The method according to claim 6, wherein the step of forming a
reflective layer comprises depositing or plating metal selected
from a group consisting of Al, Au, Ag, Ni, W, Ti and Pt.
10. The method according to claim 6, wherein the step of forming a
reflective layer comprises forming a sputtered layer made of highly
reflective metal around an outer surface of the encapsulant via
vacuum sputtering, and removing a portion of the sputtered layer
via polishing, thereby forming a light transmitting surface.
11. The method according to claim 6, wherein the step of forming a
reflective layer includes cutting the plated reflective layer and
the substrate or the sputtered reflective layer and the substrate
into individual light emitting diode packages.
12. The method according to claim 7, wherein the EMC transfer
molding for forming an encapsulant comprises inserting the
substrate and the light emitting diode chip in a mold maintained at
a temperature ranging from 150.degree. C. to 190.degree. C.,
inserting a solid mixture of transparent epoxy molding compound and
phosphor maintained at a temperature ranging from 80.degree. C. to
90.degree. C. into the mold, thereby changing a phase of the
mixture of transparent EMC and phosphor from solid to liquid to
form an encapsulant.
13. The method according to claim 12, further comprising a step of
compressing the solid mixture of transparent epoxy molding compound
and phosphor into the mold at 500 psi to 1000 psi.
14. The method according to claim 13, wherein the mixture is cured
into the encapsulant without precipitation of the phosphor in the
transparent epoxy molding compound in order to minimize irregular
color distribution.
Description
CLAIM OF PRIORITY
[0001] This application claims the benefit of Korean Patent
Application No. 2005-53163 filed on Jun. 20, 2005, in the Korean
Intellectual Property Office, the disclosure of which is
incorporated herein by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a Light Emitting Diode
(LED) package having a metal reflective layer for focusing and
emitting light through one side of the package, and a method of
manufacturing the same. More particularly, the invention relates to
an LED package with a metal reflective layer minimized in light
loss and improved in luminance, which can be mass-manufactured as a
PCB type in a small size unaffected by the size of an LED chip, and
is improved in productivity.
[0004] 2. Description of the Related Art
[0005] In general, a mobile phone or PDA adopts a light emitting
diode (LED) package in various sizes for a backlight.
[0006] As the backlights are becoming slimmer, the LED packages
adopted therein are also becoming slimmer these days.
[0007] The LED package 300 shown in FIG. 1 is described in U.S.
Patent No. 2003-0094622, in which a reflective layer 312 is formed
of a lead frame for an LED chip 310 mounted in the package 300, and
the package is sealed with a sealing plate 314 that covers the LED
chip 310 and the reflective layer 312.
[0008] In this conventional LED package 300, the reflective layer
312 is made of an Ag-plated layer to focus and emit light from the
LED chip 310 through one side of the package.
[0009] However, in such a conventional structure, the LED chip 310
is formed in a recess 322 of the substrate, and a separate sealing
plate 314 covers the recess 322, and thus limiting automated
manufacturing and mass-production.
[0010] FIGS. 2(a) and 2(b) illustrate a different structure of LED
package 400 of the prior art. An LED chip 412 is mounted on a
substrate 410, and a molded part 414 with a cavity therein is
adhered on the substrate 410. Then, a resin solution with phosphor
and epoxy mixed therein is injected into the space 414a to be
cured, and the complete structure is diced. However, as an
additional process is required to adhere the molded part 414 on the
substrate 410, the manufacturing process is not efficient in terms
of productivity.
[0011] In addition, as shown in FIG. 3, in the conventional LED
package 400, the resin solution with the phosphor and epoxy mixed
therein is injected into the space 414a in the molded part 414 and
cured for about 1 hour to form an encapsulant 416. In such a curing
process, the phosphor in the epoxy 418a of the encapsulant 416
tends to precipitate, causing irregular color distribution.
Therefore, such a conventional LED package 400 yields
low-uniformity and rather mediocre color development.
SUMMARY OF THE INVENTION
[0012] The present invention has been made to solve the foregoing
problems of the prior art and therefore an object of certain
embodiments of the present invention is to provide an LED package
having a metal reflective layer, which does not require a molded
part, and thus can have a minimal thickness, and a method of
manufacturing the same.
[0013] Another object of certain embodiments of the invention is to
provide an LED package having a metal reflective layer, which can
be mass-produced without being affected by the LED chip size, and
can be easily manufactured in a small size, and a method of
manufacturing the same.
[0014] Further another object of certain embodiments of the
invention is to provide an LED package having a metal reflective
layer, which adopts Epoxy Molding Compound (EMC) transfer molding
to minimize irregular color distribution and enhance uniform color
development, and a method of manufacturing the same.
[0015] Yet another object of certain embodiments of the invention
is to provide an LED package minimized in light loss and improved
in luminance, which can be mass-produced and is improved in
productivity, and a method of manufacturing the same.
[0016] According to an aspect of the invention for realizing the
object, there is provided a light emitting diode package for
emitting light from a light emitting diode chip in one direction,
including: a substrate with an electrode formed thereon; a light
emitting diode chip disposed on the substrate; an encapsulant
covering the LED chip and the substrate to protect the LED chip;
and a metal reflective layer surrounding side surfaces of the
encapsulant to form a light transmitting surface on a top surface
of the encapsulant.
[0017] According to another aspect of the invention for realizing
the object, there is provided a method of manufacturing a light
emitting diode package for emitting light from a light emitting
diode chip in one direction, including steps of: providing a
substrate with an electrode formed thereon; disposing a light
emitting diode chip on the substrate; forming an encapsulant on the
light emitting diode chip and the substrate; cutting the
encapsulant; and forming a reflective layer on the encapsulant.
BRIEF DESCRIPTION OF THE DRAWINGS
[0018] The above and other objects, features and other advantages
of the present invention will be more clearly understood from the
following detailed description taken in conjunction with the
accompanying drawings, in which:
[0019] FIG. 1 is a sectional view illustrating an LED package
according to the prior art;
[0020] FIG. 2 illustrates another LED package according to the
prior art, in which (a) is an explanatory view illustrating cutting
a molded part, and (b) is a longitudinal sectional view;
[0021] FIG. 3 illustrates a work process with epoxy resin
constituting an encapsulant of the LED package according to the
prior art;
[0022] FIG. 4 is a configuration view illustrating an LED package
having a metal reflective layer according to the present invention,
in which (a) is a perspective view of the exterior, and (b) is a
sectional view illustrating the LED package having a light
transmitting surface on an upper part thereof;
[0023] FIG. 5 is a view illustrating the step-by-step process of
manufacturing the LED package having a metal reflective layer
according to the present invention;
[0024] FIG. 6 is a view illustrating the step-by-step process of
manufacturing a variation of the LED package having a metal
reflective layer; and
[0025] FIG. 7 is a view illustrating EMC transfer molding to form
an encapsulant in the manufacturing process of the LED package
according to the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
[0026] Preferred embodiments of the present invention will now be
described in detail with reference to the accompanying
drawings.
[0027] As shown in FIG. 4, an LED package 1 having a metal
reflective layer according to the present invention is for emitting
light from an LED chip 5 in one direction of an encapsulant 10.
[0028] Light is emitted through a light transmitting surface 17
which is preferably in front and in parallel with a plane where the
LED chip 5 is disposed.
[0029] The LED package 1 having a metal reflective layer according
to the present invention has a substrate with electrodes 15a and
15b formed thereon. The substrate 15 may preferably be a Printed
Circuit Board (PCB) or a ceramic substrate having pattern
electrodes 15a and vertical electrodes 15b such as vias.
[0030] In addition, an LED chip 5 is electrically connected to the
electrode 15a and mounted on the substrate 15. The LED chip 5 may
be a horizontal type with all of its electric terminals formed only
on an upper surface thereof, or a vertical type with the electric
terminal formed on upper and lower surfaces thereof.
[0031] In addition, an encapsulant 10 is formed on the LED chip 5
and the substrate 15 to cover them. The encapsulant 10 is made by
curing epoxy resin, and preferably is formed via Epoxy Molding
Compound (EMC) transfer molding using epoxy molding compound with
phosphor mixed therein in order to minimize irregular color
distribution.
[0032] According to the present invention, when the encapsulant 10
is disposed on the LED chip 5 and the substrate 15 in a desired
form, a reflective layer 20 is formed on the encapsulant 10 with a
light transmitting surface 17 on one surface, i.e., an upper
surface of the encapsulant 10 as shown in FIG. 4 (b).
[0033] The reflective layer 20 is made of metal selected from a
group consisting of Al, Au, Ag, Ni, W, Ti and Pt. The reflective
layer 20 is formed on side surfaces of the encapsulant 10 via
electroless plating or electro-plating, or surrounding the entire
surfaces of the encapsulant 10 via vacuum deposition, with an upper
surface of the encapsulant polished to form the light transmitting
surface 17.
[0034] Therefore, the reflective layer 20 surrounds the entire side
surfaces, except the portion of the light transmitting surface 17,
of the encapsulant 10 without any spots missed.
[0035] A manufacturing process 100 of an LED package having a metal
reflective layer according to the present invention will now be
explained hereinafter.
[0036] As shown in FIG. 5, the manufacturing process 100 of the LED
package having a metal reflective layer according to the present
invention starts with a step 102 of providing a substrate 15 with
electrodes 15a and 15b formed thereon.
[0037] In addition, the substrate 10 is provided with pattern
electrodes 15a and vertical electrodes 15b such as vias for
supplying power to the LED chips and electrodes 15c for plating a
reflective layer later.
[0038] The substrate 15 can be a PCB or a ceramic substrate with
vertical electrodes 15b such as vias formed thereon, and each of
the pattern electrodes 15a connected to the LED chip 5 is
electrically connected to each of the vertical electrode 15b such
as a via.
[0039] In the next step 104, the LED chip 5 is mounted on the
substrate 15.
[0040] In this step 104, a plurality of LED chips 5 are
simultaneously mounted on predetermined locations on one substrate
15, and each of the LED chips 5 is electrically connected to each
of the pattern electrodes 15a on the substrate 15 via wires.
[0041] In the next step 106, an encapsulant 10 is formed on the LED
chip 5 and the substrate 15.
[0042] In this step 106, the encapsulant 10 is formed via EMC
transfer molding using an epoxy molding compound with phosphor
mixed therein in order to minimize irregular color distribution
after it is cured.
[0043] As shown in FIG. 7, in the process of EMC transfer molding
200 adopted for forming the encapsulant 10, the substrates 15 and
the LED chips 5 are inserted into a mold 210 maintained at about
150.degree. C. to 190.degree. C., and a solid mixture 220 of
transparent EMC and phosphor maintained at about 80.degree. C. to
90.degree. C. is injected into the mold 210. Then, the mixture 220
of the transparent EMC and the phosphor is compressed at 500 to
1000 psi so that the mixture of the transparent EMC and the
phosphor changes in its phase from solid to liquid inside the mold
210. This liquid mixture 220 of the transparent EMC and the
phosphor flows over the substrate 15 and the LED chip 5 to form the
encapsulant 10. After 5 to 7 minutes without applying heat and
compression, it is cured in a short time from liquid phase to solid
phase.
[0044] After the curing is completed, the substrate 15 and the LED
chip 5 with the encapsulant 10 formed thereon is separated from the
mold 210 to complete the encapsulant 10.
[0045] In the encapsulant 10 formed via the above described EMC
transfer molding, the phosphor 222b does not precipitate in the
transparent EMC 222a, which minimizes irregular color distribution
and enhances uniformity of color development.
[0046] After the encapsulant 10 is completed, the encapsulant 10 is
cut in the next step 108.
[0047] In this step 108, in order to form a desired shape of
encapsulant 10 for the LED chips 5, only the encapsulant 10 is
diced or etched. In this step 108, the encapsulant 10 is formed
such that the lower periphery thereof exposes the electrode 15c for
plating.
[0048] Then, a reflective layer 20 is formed on the encapsulant 10
in the next step 110. The reflective layer 20 is formed as a plated
layer 22 on the encapsulant 10 by electroless plating or
electro-plating highly reflective metal selected from a group
consisting of, for example, Al, Au, Ag, Ni, W, Ti and Pt. At this
point, the plated layer 22 is formed integrally with the
encapsulant 10 to completely surround the side surfaces of the
encapsulant 10, thereby preventing leakage of light.
[0049] With the reflective layer 20 formed as just described, the
light transmitting surface 17 is formed on an upper surface of the
encapsulant 10.
[0050] In the next step 112, the plated layer 22 and the substrate
15 are cut horizontally and vertically into individual LED packages
to obtain a plurality of LED packages 1.
[0051] In this step 112, each of the LED packages 1 has the light
transmitting surface 17 formed on an upper surface of the
encapsulant 10, and the metal reflective layer 20 surrounds the
side surfaces of the encapsulant 10 so that light from the LED chip
is leaked only through the light transmitting surface 17.
[0052] Alternatively, as shown in FIG. 6, in the step 110 of
forming the reflective layer 20 on the encapsulant 10, a sputtered
layer 22' is formed via vacuum sputtering using highly reflective
metal selected from a group consisting of, for example, Al, Au, Ag,
Ni, W, Ti and Pt to surround the outer surfaces of the encapsulant
10. In this case, the sputtered layer 22' is formed integrally with
the encapsulant 10 to completely surround the outer surfaces of the
encapsulant 10 so as not to allow any leakage of light.
[0053] In the next step 110', an upper surface of the sputtered
layer 22' is polished to be removed, thus forming the light
transmitting surface 17 on an upper surface of the encapsulant
10.
[0054] Thus is completed a structure with the light transmitting
surfaces 17 formed on upper surfaces of the encapsulant 10.
[0055] In the next step 112, the substrate 15 is cut horizontally
and vertically into individual LED packages to obtain a plurality
of LED packages 1.
[0056] Through the above steps, each LED package 1 is completed
with the light transmitting surface 17 formed on an upper surface
of the encapsulant 10 and the metal reflective layer 20 surrounding
the side surfaces of the encapsulant, thereby allowing leakage of
light from the LED chip 5 only through the light transmitting
surface 17.
[0057] According to the present invention as set forth above, a
reflective layer and an encapsulant are integrated to minimize the
thickness of the LED package, thereby easily applicable to various
types of slimmer backlights.
[0058] In addition, the present invention does not need a molded
part in addition to an encapsulant, allowing a thin, small-sized
structure, and adopts highly reflective metal for a reflective
layer surrounding the surfaces of the encapsulant, except the
portion of the light transmitting surface, to minimize leakage of
light.
[0059] In addition, in the present invention, the entire process
including mounting the LED chip, molding and dicing is conducted on
a PCB, enabling mass-production with significantly improved
productivity.
[0060] Furthermore, the present invention adopts EMC transfer
molding using an epoxy molding compound with phosphor mixed therein
so that the phosphor does not precipitate after the encapsulant is
cured, thereby minimizing irregular color distribution and
significantly improving optical quality.
[0061] Certain exemplary embodiments of the invention have been
explained and shown in the drawings as presently preferred. The
invention may, however, be embodied in many different forms and
should not be construed as limited to the embodiments set forth
herein. While the present invention has been shown and described in
connection with the preferred embodiments, it will be apparent to
those skilled in the art that modifications and variations can be
made without departing from the spirit and scope of the invention
as defined by the appended claims.
* * * * *