U.S. patent application number 11/485263 was filed with the patent office on 2006-11-30 for light-emitting gallium nitride-based iii-v group compound semiconductor device with high light extraction efficiency.
Invention is credited to Chi-Feng Chan, Schang-Jing Hon, Jenn-Bin Huang, Mu-Jen Lai, Hsueh-Feng Sun, Shi-Ming Yang.
Application Number | 20060267027 11/485263 |
Document ID | / |
Family ID | 36032962 |
Filed Date | 2006-11-30 |
United States Patent
Application |
20060267027 |
Kind Code |
A1 |
Lai; Mu-Jen ; et
al. |
November 30, 2006 |
Light-emitting gallium nitride-based III-V group compound
semiconductor device with high light extraction efficiency
Abstract
A light-emitting gallium nitride-based III-V group compound
semiconductor device with high light extraction efficiency that
features on a substrate with concave and /or convex surface, a
texturing surface layer, and a transparent conductive window layer.
Therefore, the operating voltage is decreased and the efficiency of
light extracting is improved.
Inventors: |
Lai; Mu-Jen; (Chungli City,
TW) ; Hon; Schang-Jing; (Pa Te City, TW) ;
Huang; Jenn-Bin; (Pingjhen City, TW) ; Chan;
Chi-Feng; (Pingjhen City, TW) ; Sun; Hsueh-Feng;
(Taoyuan City, TW) ; Yang; Shi-Ming; (Wuchi
Township, TW) |
Correspondence
Address: |
ROSENBERG, KLEIN & LEE
3458 ELLICOTT CENTER DRIVE-SUITE 101
ELLICOTT CITY
MD
21043
US
|
Family ID: |
36032962 |
Appl. No.: |
11/485263 |
Filed: |
July 13, 2006 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10986147 |
Nov 12, 2004 |
|
|
|
11485263 |
Jul 13, 2006 |
|
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Current U.S.
Class: |
257/79 ;
257/E33.074 |
Current CPC
Class: |
H01L 33/42 20130101;
H01L 33/22 20130101; H01L 33/32 20130101 |
Class at
Publication: |
257/079 |
International
Class: |
H01L 33/00 20060101
H01L033/00 |
Foreign Application Data
Date |
Code |
Application Number |
Sep 16, 2004 |
TW |
093214830 |
Claims
1. A light-emitting gallium nitride-based III-V group compound
semiconductor device with high light extraction efficiency,
comprising: a substrate having nano scale concave and/or convex
surfaces; a semiconductor stacked structure arranged over said
substrate, and comprising: a first gallium nitride-based III-V
group compound semiconductor layer, a light-emitting layer and a
second gallium nitride-based III-V group, compound semiconductor
layer from the bottom up in sequence; a micro scale texturing
surface layer formed during the growth of epitaxy and arranged over
said second gallium nitride-based III-V group compound
semiconductor layer; a transparent conductive window layer arranged
over said micro scale texturing surface layer and establishing an
ohmic contact with said micro sacle texturing surface layer; a
first electrode provided in electrical contact with said first
gallium nitride-based III-V group compound semiconductor layer of
said semiconductor stacked structure; and a second electrode in
electrical contacted with said transparent conductive window
layer.
2. The device according to claim 1, wherein said substrate is a
single crystal whose refractive index is smaller than that of said
semiconductor stacked structure.
3. The device according to claim 2, wherein said nano scale concave
and/or convex surface structure of said substrate interposed by
said the first gallium nitride-based III-V group compound
semiconductor laye.
Description
REFERENCE TO RELATED APPLICATION
[0001] This Application is a continuation-in-part of patent
application Ser. No. 10/986,147, filed 12 Nov. 2004, currently
pending.
BACKGROUND OF THE INVENTION
[0002] The present invention relates to a light-emitting gallium
nitride-based III-V group compound semiconductor device with high
light extraction efficiency, especially to a compound semiconductor
device that reduces the operating voltage and improves the
efficiency of light extracting.
[0003] Refer to FIG. 1, the structure of conventional
light-emitting gallium nitride-based III-V group compound
semiconductor device is disclosed. The device includes a sapphire
substrate 10', a gallium nitride buffer layer 20', a n-type gallium
nitride contact layer 30', an indium gallium nitride (InGaN)
emitting layer 40', a p-type gallium nitride layer 50', a p-type
gallium nitride contact layer 60' (from layer 20' to layer 60' are
called epitaxy structure)', a transparent conductive layer 70' made
of Ni/Au. Moreover, a p-type metal electrode 80' is stacked over
the transparent conductive layer 70' and a n-type metal electrode
90' is arranged over the n-type gallium nitride contact layer 30'.
In order to increase the light extraction efficiency of the device,
the optical transparency of the transparent conductive layer is
increased or a reflective layer is added under the light-emitting
layer. However, both methods can only increase the light extraction
efficiency of the emitting light along vertical direction.
[0004] The refractive index of the epitaxy structure of gallium
nitride is 2.4, the refractive index of the sapphire substrate is
1.77, and the refractive index of the packaging resin is 1.5. Due
to the waveguide effect, part of the light emitting from the
light-emitting layer is reflected by the sapphire substrate and the
packaging resin and then is absorbed by the multi-layer epitaxy
structure of gallium nitride. Thus the light extraction efficiency
is decreased. In order to break the waveguide effect, a texturing
surface or a rough surface is provided on the surface of the
light-emitting compound semiconductor device so as to reduce
reflection of light through various interfaces with different
refractive indices.
[0005] During the growth of the epitaxy, the texturing or rough
surface are formed artificially, please refer to the Taiwanese
patent application No. 092132987, the process has been described
therein. Moreover, in order to increase the light extraction
efficiency and reduce the operating voltage, a structure is
disclosed in the Taiwanese patent application No. 093204255 whose
applicant is the same with the present invention. A conventional
transparent conductive layer made of Ni/Au is replaced by a
transparent conductive window layer whose optical transmittance is
better than Ni/Au and having good ohmic contact with the texturing
surface layer so as to reduce the operating voltage.
[0006] Furthermore, if the bottom of the multi-layer epitaxy
structure of gallium nitride is also provided with a texturing
surface or a rough surface, the light extraction efficiency of the
device is further improved.
SUMMARY OF THE INVENTION
[0007] Therefore, it is a primary object of the present invention
to provide a light-emitting gallium nitride-based III-V group
compound semiconductor device with high light extraction efficiency
having a substrate with concave and/or convex surfaces and a
texturing surface layer, both for improving the efficiency of light
extraction.
[0008] It is a further object of the present invention to provide a
light-emitting gallium nitride-based III-V group compound
semiconductor device having a substrate with concave and/or convex
surfaces, a texturing surface layer and a transparent conductive
layer. The texturing surface layer establishes an ohmic contact
with the transparent conductive layer so as to reduce to operating
voltage of the light-emitting device.
[0009] In order to achieve the objects mentioned above, the present
invention is composed by a substrate with concave and/or convex
surfaces, a texturing surface layer and a transparent conductive
layer. The present invention has lower operating voltage and higher
light extraction efficiency.
BRIEF DESCRIPTION OF THE DRAWINGS
[0010] The structure and the technical means adopted by the present
invention to achieve the above and other objects can be best
understood by referring to the following detailed description of
the preferred embodiments and the accompanying drawings,
wherein
[0011] FIG. 1 is a schematic drawing showing the structure of a
prior art of the light-emitting gallium nitride-based III-V group
compound semiconductor device;
[0012] FIG. 2 is a schematic drawing showing the structure of an
embodiment of the present invention.
DETAILED DESCRIPTION OF THE PREFFERED EMBODIMENT
[0013] The present invention can solve the problem of waveguide
effect of conventional light-emitting device. The waveguide effect
causes that part of the light emitting from the light-emitting
layer is reflected by the sapphire substrate and the packaging
resin and then is absorbed by the multi-layer epitaxy structure of
gallium nitride. Thus the light extraction efficiency is decreased.
The present invention provides a substrate with concave and/or
convex surfaces, and a texturing surface formed on the surface of
the light-emitting compound semiconductor device during the growth
of epitaxy so as to break the waveguide effect and raise the light
extraction efficiency.
[0014] Refer to FIG. 2, a better embodiment of the present
invention is disclosed. A light-emitting gallium nitride-based
III-V group compound semiconductor device includes a substrate
layer 10 having concave and/or convex surfaces, an n-type gallium
nitride-based III-V group compound semiconductor layer 20, a
light-emitting layer (active layer) 30, a p-type gallium
nitride-based III-V group compound semiconductor layer 40, a
texturing surface layer 50, a transparent conductive window layer
60, a first electrode 22 and a second electrode 42, wherein the
substrate 10 further having a buffer layer 12.
[0015] The substrate 10 can be a transparent substrate, such as
sapphire, zinc oxide (ZnO), lithium gallium oxide, lithium aluminum
oxide, or spineI. The n-type gallium nitride-based III-V group
compound semiconductor layer 20 is made of n-doped gallium nitride
(GaN), aluminum indium gallium nitride (AlInGaN), or indium gallium
nitride (InGaN) layer. The p-type gallium nitride-based III-V group
compound semiconductor layer 40 is a p-doped gallium nitride(GaN),
aluminum indium gallium nitride (AlInGaN), or indium gallium
nitride (InGaN) layer. The texturing surface layer 50 is a p-doped,
n-doped, or co-doped gallium nitride-based III-V group compound
semiconductor layer, whose chemical formula is AlInGaNPAs. The
light-emitting layer (active layer) 30 is formed of a nitride
compound semiconductors having indium.
[0016] The transparent conductive window layer 60 is a transparent
and conductive oxide layer made of an indium oxide, tin oxide,
indium molybdenum oxide(IMO), zinc oxide(ZnO), indium zinc
oxide(IZO), indium cerium oxide(ICO), or indium tin oxide(ITO).
[0017] The texturing surface layer 50 is formed due to the control
during the epitaxy growth, allowing formation of such structure on
the surface of the p-type gallium nitride-based III-V group
compound semiconductor layer 40 and the texturing scale is over 0.2
um in dimension. Thus the contact resistance between the texturing
surface layer 50 and the transparent conductive window layer 60 is
reduced. Accordingly, the operating voltage of the light-emitting
device is decreased.
[0018] The concave and/or convex surface on the substrate is made
by a photosensitive mask used in etch process. For example 1, the
sapphire substrate is C-Plane (0001) and the photosensitive mask
made of nickel, photo-resist, silicon oxide, or silicon nitride is
parallel or perpendicular to the A-plane of the substrate. Then the
sapphire substrate is etched by dry etch techniques such as
reactive ion etching (RIE) or inductively coupled plasma etching
(ICP), together with the gas combination of BCo.sub.3, Cl.sub.2 and
Ar. Thus the sapphire substrate turns into a substrate with a
plurality of convexity and concavity while the width of the
convexity ranges from 1 um to 5 um, the width of the concavity
ranges from 1 um to 5 um, and the etch depth is from 0.1 to 2
um.
[0019] For example 2, the sapphire substrate is R-Plane (1102) and
the photosensitive mask made of nickel, photo-resist, silicon
oxide, or silicon nitride is parallel or perpendicular to the
(0001)-plane or (1120)-plane of the substrate. Then the sapphire
substrate is etched by dry etch techniques such as reactive ion
etching (RIE) or inductively coupled plasma etching (ICP), together
with the gas combination of BCl.sub.3, Cl.sub.2 and Ar. Thus the
sapphire substrate turns into a substrate with a plurality of
convexity and concavity while the width of the convexity ranges
from 1 um to 5 um, the width of the concavity ranges from 1 um to 5
um, and the etch depth is from 0.1 to 2 um.
[0020]
[0021] The concave and/or convex surface on the substrate is made
by a nanolithography used in etch process. For example 3, the
sapphire substrate is C-Plane (0001) and the mask dimension is down
to nano scale made by holography, E-beam writer or nanosphere
lithography methods and the shape is circle,square or hexagonal.
Then the sapphire substrate is etched by dry etch techniques such
as reactive ion etching (RIE) or inductively coupled plasma etching
(ICP), together with the gas combination of BCl.sub.3, Cl.sub.2 and
Ar. Thus the sapphire substrate turns into a substrate with a
plurality of convexity and concavity while the width of the
convexity ranges from 50 nm to 500 nm, the width of the concavity
ranges from 50 nm to 500 nm, and the etch depth is over 10 nm.
TABLE-US-00001 Comparison chart (the transparent conductive window
layer is made of indium tin oxide) output Vf at Structure of the
light-emitting device power(mw) 20 mA with flat surface 8.8 4.0
with texturing surface 12 3.2 with a substrate having micro scale
concave 13.7 3.2 and/or convex surfaces and a layer of texturing
surface with a substrate having nano scale concave 18 3.2 and/or
convex surfaces and a layer of texturing surface
[0022] Additional advantages and modifications will readily occur
to those skilled in the art. Therefore, the invention in its
broader aspects is not limited to the specific details, and
representative devices shown and described herein.
[0023] Accordingly, various modifications may be made without
departing from the spirit or scope of the general inventive concept
as defined by the appended claims and their equivalents.
* * * * *