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Huang; Jenn-Bin Patent Filings

Huang; Jenn-Bin

Patent Applications and Registrations

Patent applications and USPTO patent grants for Huang; Jenn-Bin.The latest application filed is for "light-emitting gallium nitride-based iii-v group compound semiconductor device with high light extraction efficiency".

Company Profile
0.4.7
  • Huang; Jenn-Bin - Tai Chung Hsienm TW
  • Huang; Jenn-Bin - Pingjhen TW
  • Huang; Jenn-Bin - Pingjhen City TW
  • Huang; Jenn-Bin - Tai Chung Hsien TW
  • Huang, Jenn-Bin - Ping Cheng City TW
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Gallium nitride based light-emitting device
Grant 7,345,315 - Hon , et al. March 18, 2
2008-03-18
Light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency
Grant 7,285,800 - Lai , et al. October 23, 2
2007-10-23
Method for manufacturing a light-emitting structure of a light-emitting device (LED)
Grant 7,279,347 - Hon , et al. October 9, 2
2007-10-09
Light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency
App 20060267027 - Lai; Mu-Jen ;   et al.
2006-11-30
Gallium nitride based light-emitting device
App 20060138449 - Hon; Schang-Jing ;   et al.
2006-06-29
Light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency
App 20060054898 - Lai; Mu-Jen ;   et al.
2006-03-16
Gallium nitride based compound semiconductor light-emitting device
Grant 6,992,331 - Hon , et al. January 31, 2
2006-01-31
GaN-based light-emitting diode structure
App 20050236636 - Hon, Schang-Jing ;   et al.
2005-10-27
Gallium nitride based light-emitting device
App 20040104398 - Hon, Schang-Jing ;   et al.
2004-06-03
Gallium nitride based compound semiconductor light-emitting device and manufacturing method therefor
App 20040094772 - Hon, Schang-Jing ;   et al.
2004-05-20
Gallium nitride based compound semiconductor light-emitting device and manufacturing method therefor
App 20040089868 - Hon, Schang-Jing ;   et al.
2004-05-13

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