U.S. patent application number 11/382474 was filed with the patent office on 2006-09-07 for charge trapping device.
This patent application is currently assigned to Progressant Technologies, Inc.. Invention is credited to Tsu-Jae King, David K.Y. Liu.
Application Number | 20060197122 11/382474 |
Document ID | / |
Family ID | 24414104 |
Filed Date | 2006-09-07 |
United States Patent
Application |
20060197122 |
Kind Code |
A1 |
King; Tsu-Jae ; et
al. |
September 7, 2006 |
Charge Trapping Device
Abstract
A silicon based semiconductor device and method uses charge
trapping to alter a density of carriers available in a channel of a
field effect transistor (FET) for conduction. The charge trapping
mechanism can be controlled by a source-drain bias voltages applied
to the FET, so that the device can be turned off through a control
mechanism separate from a gate voltage.
Inventors: |
King; Tsu-Jae; (Fremont,
CA) ; Liu; David K.Y.; (Fremont, CA) |
Correspondence
Address: |
BEVER, HOFFMAN & HARMS, LLP
1432 CONCANNON BLVD
BLDG G
LIVERMORE
CA
94550-6006
US
|
Assignee: |
Progressant Technologies,
Inc.
Mountain View
CA
|
Family ID: |
24414104 |
Appl. No.: |
11/382474 |
Filed: |
May 9, 2006 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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10753948 |
Jan 7, 2004 |
7067873 |
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11382474 |
May 9, 2006 |
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10252906 |
Sep 23, 2002 |
6700155 |
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10753948 |
Jan 7, 2004 |
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09603102 |
Jun 22, 2000 |
6479862 |
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10252906 |
Sep 23, 2002 |
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Current U.S.
Class: |
257/288 ;
257/E29.162; 257/E29.255 |
Current CPC
Class: |
H01L 29/78 20130101;
H01L 29/788 20130101; H01L 29/792 20130101; H01L 29/51 20130101;
H01L 29/7881 20130101; H01L 29/513 20130101; H01L 29/42332
20130101 |
Class at
Publication: |
257/288 |
International
Class: |
H01L 29/76 20060101
H01L029/76 |
Claims
1. A silicon based semiconductor device comprising: a silicon based
substrate; a channel region in the silicon based substrate for
carrying a device current consisting of charge carriers between a
source region and a drain region; a gate region for receiving a
gate bias voltage to control a density of said charge carriers in
said channel region available for said device current; a trapping
region located proximate to said channel region, said trapping
region being configured for trapping charge carriers and altering
said density of charge carriers in said channel region; wherein
said density of charge carriers in said channel region available
for said device current is also controllable by a drain bias
voltage applied to said drain region, such that said drain bias
voltage can reduce said density of charge carriers and turn off the
silicon based semiconductor device.
2. The silicon based semiconductor device of claim 1, wherein said
channel exhibits negative differential resistance.
3. The silicon based semiconductor device of claim 2, wherein
conduction in said channel can be continuously and dynamically
varied between a negative differential resistance mode and a
non-negative differential resistance mode.
4. The silicon based semiconductor device of claim 1, wherein said
trapping region is configured such that said charge carriers are
trapped only temporarily and such that a continuous trapping and
de-trapping mechanism is set up between said trapping layer and
said channel.
5. The silicon based semiconductor device of claim 1, wherein a
threshold voltage of the silicon based semiconductor device is
controlled by said drain bias voltage.
6. The silicon based semiconductor device of claim I wherein an
amount of charge carriers trapped by the charge trapping region is
controlled by said drain bias voltage.
7. A metal-insulator-semiconductor field-effect transistor (MISFET)
comprising: first conductivity type doped source and drain regions
formed in the surface of a semiconductor substrate and separated by
a second conductivity type doped channel region, said second
conductivity type being opposite to said first conductivity; a gate
formed over and electrically insulated from said channel region by
a gate dielectric, which gate dielectric includes a charge trapping
layer; said charge trapping layer being located near an interface
with said second conductivity type channel region and being
configured to trap charge and cause a threshold voltage of the
MISFET to be significantly altered in a dynamic and reversible
manner in response to an adjustable bias voltage applied to the
MISFET; wherein said adjustable bias voltage is not a program
and/or an erase cycle.
8. The MISFET of claim 7 wherein a negative differential resistance
characteristic is achieved by rapid trapping and de-trapping of
electrons to and from said charge trapping sites in said charge
trapping layer.
9. The MISFET of claim 7 wherein said charge trapping layer
includes charge-trapping sites consisting of one or more islands of
metal or semiconductor embedded in said gate dielectric.
10. The MISFET of claim 7 wherein said charge trapping layer
comprises silicon nitride.
11. The MISFET of claim 7, wherein said adjustable bias voltage is
applied to said first conductivity type source and drain
regions.
12. The MISFET of claim 7, wherein a trapping mechanism by said
charge trapping layer can be selectively disabled by applying a
separate bias voltage to a body region portion of the MISFET.
Description
RELATED APPLICATIONS
[0001] The present invention claims priority to and is a
continuation of an application titled "CHARGE TRAPPING DEVICE" Ser.
No. 10/753,948 filed Jan. 7, 2004 which claims priority to and is a
continuation of an application titled "CHARGE TRAPPING DEVICE AND
METHOD FOR IMPLEMENTING A TRANSISTOR HAVING A CONFIGURABLE
THRESHOLD" Ser. No. 10/252,906 filed Sep. 23, 2002.
[0002] The aforementioned Ser. No. 10/252,906 application claims
priority to and is in turn a continuation of an application titled
"CHARGE TRAPPING DEVICE AND METHOD FOR IMPLEMENTING A TRANSISTOR
HAVING A NEGATIVE DIFFERENTIAL RESISTANCE MODE" (Ser. No.
09/603,102 filed Jun. 22, 2000, now U.S. Pat. No. 6,479,862), and
is farther related to and claims priority to the following
applications: an application titled "CMOS PROCESS COMPATIBLE,
TUNABLE NDR (NEGATIVE DIFFERENTIAL RESISTANCE) DEVICE AND METHOD OF
OPERATING SAME," (Ser. No. 09/603,101 filed Jun. 22, 2000, now U.S.
Pat. 6,512,274); and an application titled "CMOS COMPATIBLE PROCESS
FOR MAKING A TUNABLE NEGATIVE DIFFERENTIAL RESISTANCE (NDR)
DEVICE"(Ser. No. 09/602,658 filed Jun. 22, 2000, now U.S. Pat. No.
6,596,617).
[0003] The above materials are expressly incorporated by reference
herein.
FIELD OF THE INVENTION
[0004] This invention relates to semiconductor devices and more
particularly to a structures and devices that enable a transistor
to operate with a negative differential resistance mode. The
present invention is applicable to a wide range of semiconductor
integrated circuits, particularly for high-density memory and logic
applications, as well as power management.
BACKGROUND OF THE INVENTION
[0005] Devices that exhibit a negative differential resistance
(NDR) characteristic, such that two stable voltage states exist for
a given current level, have long been sought after in the history
of semiconductor-devices. When Nobel Prize winner Leo Esaki
discovered the NDR characteristic in a resonant tunneling diode
(RTD), the industry looked expectantly to the implementation of
faster and more efficient circuits using these devices. NDR based
devices and principles are discussed in a number of references,
including the following that are hereby incorporated by reference
and identified by bracketed numbers [ ] where appropriate
below:
[0006] [1] P. Mazumder, S. Kulkami, M. Bhattacharya, J. P. Sun and
G. I. Haddad, "Digital Circuit Applications of Resonant Tunneling
Devices," Proceedings of the IEEE, Vol. 86, No. 4, pp. 664-686,
1998.
[0007] [2] W. Takao, U.S. Pat. No. 5,773,996, "Multiple-valued
logic circuit" (issued Jun. 30, 1998)
[0008] [3] Y. Nakasha and Y. Watanabe, U.S. Pat. No. 5,390,145,
"Resonance tunnel diode memory" (issued Feb. 14, 1995)
[0009] [4] J. P. A. Van Der Wagt, "Tunneling-Based SRAM,"
Proceedings of the IEEE, Vol. 87, No. 4, pp. 571-595, 1999.
[0010] [5] R. H. Mathews, J. P. Sage, T. C. L. G. Sollner, S. D.
Calawa, C.-L. Chen, L. J. Mahoney, P. A. Maki and K. M Molvar, "A
New RTD-FET Logic Family," Proceedings of the IEEE, Vol. 87, No. 4,
pp. 596-605, 1999.
[0011] [6] H. J. De Los Santos, U.S. Pat. No. 5,883,549, "Bipolar
junction transistor (BJT)-resonant tunneling diode (RTD) oscillator
circuit and method (issued Mar. 16, 1999)
[0012] [7] S. L. Rommel, T. E. Dillon, M. W. Dashiell, H. Feng, J.
Kolodzey, P. R. Berger, P. E. Thompson, K. D. Hobart, R. Lake, A.
C. Seabaugh, G. Klimeck and D. K. Blanks, "Room temperature
operation of epitaxially grown Si/Si.sub.0.5Ge.sub.0.5/Si resonant
interband tunneling diodes," Applied Physics Letters, Vol. 73, No.
15, pp. 2191-2193, 1998.
[0013] [8] S. J. Koester, K. Ismail, K. Y. Lee and J. O. Chu,
"Negative differential conductance in lateral double-barrier
transistors fabricated in strained Si quantum wells," Applied
Physics Letters, Vol. 70, No. 18, pp. 2422-2424, 1997.
[0014] [9] G. I. Haddad, U. K. Reddy, J. P. Sun and R. K. Mains,
"The bound-state resonant tunneling transistor (BSRTT):
Fabrication, d.c. I-V characteristics, and high-frequency
properties," Superlattices and Microstructures, Vol. 7, No. 4, p.
369, 1990.
[0015] [10] Kulkarni et. al., U.S. Pat. No. 5,903,170, "Digital
Logic Design Using Negative Differential Resistance Diodes and
Field-Effect Transistors (issued May 11, 1999).
[0016] A wide range of circuit applications for NDR devices are
proposed in the above references, including multi-valued logic
circuits [1,2], static memory (SRAM) cells [3,4], latches [5], and
oscillators [6]. To date, technological obstacles have hindered the
widespread use of RTD devices in conventional silicon-based
integrated circuits (ICs), however.
[0017] The most significant obstacle to large-scale
commercialization has been the technological challenge of
integrating high-performance NDR devices into a conventional IC
fabrication process. The majority of RTD-based circuits require the
use of transistors, so the monolithic integration of NDR devices
with predominant complementary metal-oxide-semiconductor (CMOS)
transistors is the ultimate goal for boosting circuit functionality
and/or speed. Clearly, the development of a CMOS-compatible NDR
device technology would constitute a break-through advancement in
silicon-based IC technology. The integration of NDR devices with
CMOS devices would provide a number of benefits including at least
the following for logic and memory circuits: [0018] 1) reduced
circuit complexity for implementing a given function; [0019] 2)
lower-power operation; and [0020] 3) higher-speed operation.
[0021] Significant manufacturing cost savings could he achieved
concomitantly, because more chips could be fabricated on a single
silicon wafer without a significant increase in wafer-processing
cost. Furthermore, a CMOS compatible NDR device could also be
greatly utilized in power management circuitry for ICs, which is an
area of growing importance due to the proliferation of portable
electronic devices (PDAS, cell phones, etc.)
[0022] A tremendous amount of effort has been expended over the
past several decades to research and develop silicon-based NDR
devices in order to achieve compatibility with mainstream CMOS
technology, because of the promise such devices hold for increasing
IC performance and functionality. Efforts thus far have only
yielded quantum-mechanical-tunneling-based devices that require
either prohibitively expensive process technology or extremely low
operating temperatures which are impractical for high-volume
applications. One such example in the prior art requires deposition
of alternating layers of silicon and silicon-germanium alloy
materials using molecular beam epitaxy (MBE) to achieve monolayer
precision to fabricate the NDR device [7]. MBE is an expensive
process which cannot be practically employed for high-volume
production of semiconductor devices. Another example in the prior
art requires the operation of a device at extremely low
temperatures (1.4 K) in order to achieve significant NDR
characteristics [8]. This is impractical to implement for
high-volume consumer electronics applications.
[0023] A further drawback of the tunnel diode is that it is
inherently a two-terminal device. Three (or more) terminal devices
are preferred as switching devices, because they allow for the
conductivity between two terminals to be controlled by a voltage or
current applied to a third terminal, an attractive feature for
circuit design as it allows an extra degree of freedom and control
in circuit designs. Three-terminal quantum devices which exhibit
NDR characteristics such as the resonant tunneling transistor (RTT)
[9] have been demonstrated; the performance of these devices has
also been limited due to difficulties in fabrication, however. Some
bipolar devices (such as SCRs) also can exhibit an NDR effect, but
this is limited to embodiments where the effect is achieved with
two different current levels. In other words, the I-V curve of this
type of device is not extremely useful because it does not have two
stable voltage states for a given current.
[0024] Accordingly, there exists a significant need for a new
three-terminal NDR device which can be easily and reliably
implemented in a conventional CMOS technology. In addition, it is
further desirable that such a three-terminal device can be operated
at room temperature.
[0025] One useful observation made by the inventors concerning an
ideal NDR device is to notice that its I-V curve looks essentially
like that of a non-volatile memory cell that has a dynamic and
reversible threshold voltage. The inventors thus noted that if a
non-volatile memory could be controlled in this fashion, it might
be possible to achieve an NDR effect. To date, however, the
inventors are unaware of anyone succeeding with or even attempting
such an approach. For example, in a prior art device described in
U.S. Pat. No. 5,633,178, and incorporated by reference herein, a
type of volatile memory device is depicted, in which electrons are
stored in charge traps near a substrate/dielectric layer interface.
Notably, this reference discusses the filling and emptying of the
traps through programming operations (to store a 0 or 1), but does
not identify any implementation or variation that is suitable for
an NDR application, or which even suggests that it is capable of
dynamic or quickly reversible threshold voltage operation. Similar
prior art references also identify the use of charge traps for
non-volatile memories, but none again apparently recognize the
potential use for such structures in an NDR context. See, e.g.,
U.S. Pat. Nos. 4,047,974; 4,143,393; 5,162,880 and 5,357,134
incorporated by reference herein.
SUMMARY OF THE INVENTION
[0026] An object of the present invention is to provide a new type
of semiconductor device, which like the tunnel diode, exhibits a
negative differential resistance (NDR) characteristic that can be
utilized to dramatically improve the performance and functionality
of integrated circuits;
[0027] Another object of the present invention is to provide a new
NDR device in which band-to-band tunneling is not the sole physical
mechanism responsible for the negative differential resistance
characteristic;
[0028] Another object of the present invention is to provide a new
device in which charge trapping can be used for achieving a
negative differential resistance characteristic;
[0029] Yet another object of the present invention is to provide a
new NDR device with full transistor features (i.e., a
three-terminal device), where the conductivity between two
terminals is controlled by a voltage or current applied to the
third terminal;
[0030] Yet another object of the present invention is to provide a
new NDR device which can be fabricated with a process that is fully
compatible with conventional CMOS process technology;
[0031] Yet another object of the present invention is to provide a
new NDR device whose lateral dimensions can scale in proportion
with the scaling of CMOS devices;
[0032] Yet another object of the present invention is provide a new
NDR device where the voltage corresponding to the onset of negative
differential resistance is fully tunable;
[0033] Yet another object of the present invention is to provide a
new device where the peak current as well as the negative
differential resistance between two terminals can be tailored by
adjusting the voltage applied to a third terminal;
[0034] Finally, another object of the present invention is to
provide a device that will be useful for power management
applications in portable electronic devices, including as a voltage
regulator, an overcurrent protection device, etc.
[0035] These and other objects are achieved by the present
invention that discloses a new NDR transistor that can be
implemented using conventional integrated-circuit process
technology. The new device offers significant advantages over prior
art: an electronically tunable NDR; extremely high peak-to-valley
current ratio (greater than 1000 for room-temperature operation);
compatibility with conventional CMOS process technology; and
scalability to future generations of CMOS integrated-circuit
technology.
[0036] A first aspect of the invention concerns a semiconductor
transistor device that achieves a negative differential resistance
mode by using a dynamically variable and reversible threshold
voltage. The threshold voltage can be dynamically controlled using
a conventional gate control signal. Unlike prior art devices, the
negative differential resistance is based on temporary charge
trapping/detrapping mechanism, and not on a band-to-band tunneling
mechanism.
[0037] Another aspect of the invention pertains to a semiconductor
transistor device which has three control terminals, and is
operable with a negative differential resistance mode by applying a
bias signal across two of the terminals to set up a current path
between the two terminals, and a control signal to a separate third
terminal for controlling conduction in the current path by
controlling a density of charge carriers available in the current
path.
[0038] Another aspect of the invention concerns a single charge
carrier semiconductor device which is operable with a negative
differential resistance mode as noted above with two stable voltage
states, and is fabricated using only complementary metal oxide
semiconductor (CMOS) processing.
[0039] A further aspect of the invention pertains to a dielectric
trapping layer located proximate to a transistor channel. The
transistor channel is capable of carrying a current that varies
from a first current value associated with a conducting condition
for the transistor channel, to a second current value associated
with a non-conducting condition for the transistor channel channel,
the second current value being substantially less than the first
current value. A plurality of carrier trapping sites within the
dielectric layer are configured for trapping carriers that are
electrically biased by an electrical control field to move from the
channel into the dielectric layer. A negative differential
resistance mode can be caused in the channel by rapid trapping and
de-trapping of electrons to and from the charge trapping sites.
[0040] The trapping sites have a concentration and arrangement
within the dielectric layer so that the current in the transistor
channel can be varied between the first current value and the
second current value by the action of the trapping sites adjusting
the current in accordance with a value of the electrical control
field, and such that the transistor channel exhibits negative
differential resistance. This is due to the fact that a field
generated by the carriers stored in the trapping layer can be
adjusted to be sufficiently large so as to cause the channel to be
depleted of carriers, thus reducing the current in the channel even
as the channel bias voltage is increased, and dynamically
increasing a threshold voltage of an associated FET.
[0041] Other more detailed aspects of the trapping layer and
trapping sites include the fact that the trapping sites are located
very close (within 1.5 nm preferably) to the channel/trapping layer
interface. Furthermore, the trapping and detrapping time of the
electrical charges can be controlled through the placement and
concentration of the trapping sites. In this fashion, a device can
exhibit anything from very short temporary storage times to very
long storage times so that a useful substitute can be realized for
a non-volatile floating gate type structure. This type of embedded,
spatially distributed electrode of the present invention can
exhibit substantial operating advantages over conventional single
layer, continuous type electrodes commonly used in non-volatile
memories.
[0042] Another aspect of the invention relates to the fact that the
trapping layer is used in connection with a FET so that in a first
operating region for the FET the source-drain current has a value
that increases as the lateral electrical field between the source
and drain increases, and in a second operating region for the
semiconductor device the source-drain current has a value that
decreases as the electrical field increases. Accordingly the drain
region and the gate are controlled so that the device constitutes a
three terminal device that can be operated in a range that exhibits
negative differential resistance, because the charge trapping sites
in the gate dielectric serve to trap electrons, causing the FET
threshold voltage to increase dynamically, thereby reducing an
output current of the FET as a drain-to-source voltage difference
is increased. The trapping and de-trapping actions are also
controlled so that they do not occur primarily near a drain
junction of the FET. Other more detailed features of this aspect of
the invention include the fact that the drain dopant concentration
profile is tailored to minimize impact ionization current between
the drain region and the channel region as well as to minimize
junction capacitance between the drain region and the semiconductor
substrate.
[0043] Other more detailed features of this aspect of the invention
include the fact that the trapping layer is formed as an integral
part of a gate dielectric for the FET which includes one or more of
the following materials: silicon-dioxide, silicon-nitride, and/or
silicon-oxynitride, and/or a high-permittivity layer with a
relative permittivity greater than approximately eight (8).
Furthermore, this gate dielectric has a thickness adapted to
minimize loss of trapped charge due to quantum-mechanical
tunneling. When the gate dielectric is silicon-dioxide it can be
formed either entirely or partially by thermal oxidation of heavily
doped (>10.sup.18 cm.sup.-3) p-type silicon. The charge trapping
sites thus consist of defects within the silicon-dioxide formed by
thermal oxidation of the doped p-type silicon. Alternatively, the
charge trapping sites can consist of islands of metal or
semiconductor material, or even a floating gate embedded in the
gate dielectric.
[0044] In other variations, the trapping layer/gate dielectric
consists of a plurality of dielectric layers. In such embodiments,
the charge trapping sites can consist of defects located near an
interface between adjacent layers of the gate dielectric.
[0045] Another aspect of the invention pertains to the fact that
the channel can be subjected to an electrical field having a first
field component along the surface resulting from a bias voltage
applied to the source and drain regions, and a second field
component substantially perpendicular to the surface resulting from
a control voltage applied to the control gate. These field
components control how carriers in the channel acquire sufficient
energy to overcome an interface barrier between the channel and the
trapping layer, and how quickly they are trapped and detrapped.
[0046] Other more detailed aspects of the invention pertaining to
the channel characteristics include the fact that the energetic
("hot") carriers are generated (and thus trapped) substantially
uniformly throughout a length of the channel region, instead of
being concentrated at a junction interface as occurs in the prior
art. The channel is also heavily p-type doped, and has a dopant
concentration that peaks near the semiconductor surface, to enhance
the generation of hot electrons. Furthermore, it can be offset from
the source and drain regions to minimize junction capacitance.
[0047] Other aspects of the present invention relate to methods of
operating the devices described above.
[0048] Finally, other aspects of the present invention relate to
methods of making the structures and devices above. These include
manufacturing processes which are compatible with conventional CMOS
techniques used in commercial semiconductor facilities, thus
providing a substantial advantage over the prior art. An additional
benefit lies in the fact that the onset point for the negative
differential resistance mode can be adjusted during the making of
the device.
BRIEF DESCRIPTION OF THE DRAWINGS
[0049] FIG. 1 is the schematic cross-sectional view of an
embodiment of the NDR metal-insulator-semiconductor field-effect
transistor (MISFET) disclosed in this invention.
[0050] FIG. 2 is a graphical chart illustrating the current versus
voltage (I-V) characteristics of the NDR-MISFET, including an NDR
operating region.
[0051] FIG. 3 is the schematic cross-sectional view of another
embodiment of the NDR-MISFET disclosed in this invention.
[0052] FIG. 4 is an illustrative process sequence for integrating
the NDR-MISFET into a conventional CMOS logic process flow.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
[0053] The following detailed description is meant to be
illustrative only of particular embodiments of the invention. Other
embodiments of the invention and variations of those disclosed will
be obvious to those skilled in the art in view of the following
description.
[0054] As discussed below, a preferred device embodiment is
described first. Next, the mechanism responsible for the negative
differential resistance (DR) mode is described, followed by
additional preferred embodiments for enhancing the performance of
an NDR device. Finally, an exemplary method of fabrication will be
described.
[0055] In accordance with a preferred embodiment of the invention,
an n-channel MISFET NDR device structure (FIG. 1) 100 is provided
which is made with minimum modification to a standard CMOS process.
In fact, from a first glance, device 100 appears to be an ordinary
n-channel MOS (NMOS) transistor, in which a gate electrode 110 of
the device is formed on top of a semiconductor substrate 120 and
electrically insulated from the substrate by a dielectric layer
130. Right away it can be seen that NDR device 100 in this
invention is distinctly different from NDR devices in the prior
art.
[0056] Prior-art NDR devices are typically two-terminal diode
devices, made with very complicated and expensive process sequences
which are incompatible with a conventional CMOS process. Although
NDR device 100 in this invention is similar in appearance to an
NMOS transistor, it incorporates slight but critical modifications,
as taught in this invention, in order for the device to manifest
the desired NDR output characteristic mode.
[0057] A first modification is that a p-type dopant concentration
in a surface region of the semiconductor substrate underneath the
gate electrode (the channel) is relatively high compared to a
contemporary conventionally processed n-channel device. In a
preferred embodiment of device 100, the p-type dopant concentration
is greater than 1.times.10.sup.18 cm.sup.-3 in the channel. Of
course, it will be understood that for any particular design rule,
device characteristic and process environment the p-type dopant
concentration may be varied accordingly, and that some routine
design, simulation and/or testing may be necessary to optimize the
performance of the device in any particular application.
Accordingly, the present invention is not limited to any particular
concentration, but, instead, is guided more by considerations of
whether a sufficient dopant concentration has been introduced to
help contribute to the NDR effect. More heavily doped n-type
regions in the semiconductor surface region, adjacent to the
channel and located at each end of the gate electrode, form the
source and drain contact regions 140 and 150 respectively. The
electric potential of the channel can be further adjusted via a
body contact terminal 125. A second modification of present device
100 over a conventional transistor is the fact that charge traps or
storage nodes 135 exist in insulating layer 130 between
semiconductor substrate 120 and gate electrode 110. These charge
traps are located relatively close to (within 1.5 nm of)
semiconductor-insulator interface 138, so that charges from
semiconductor 120 can be trapped and de-trapped very quickly. Again
it will be understood that this distance figure is based on the
details of the present embodiment, and that for any particular
environment this parameter may vary significantly, so the present
invention is not limited by the particular details of the same. The
key point, of course, is the existence of these charge traps, or
some other physical feature that acts to store electrons. It will
be understood of course that the drawing of FIG. 1 is merely an
illustration to better describe the features of the present
invention, and thus the arrangement and location of the trapping
sites 135 is not drawn to scale. A third modification is that
insulating layer 130 between semiconductor substrate 120 and gate
electrode 110 is relatively thick (greater than 6 nm) to prevent
significant loss of trapped charge to the gate electrode via
tunneling. Those skilled in the art will again appreciate that this
thickness is again a function of the particular material,
processing environment, etc., and that the present invention is by
no means limited to such figure.
[0058] With source and body terminals 145 and 125 of device 100
held at ground potential and gate terminal 115 biased sufficiently
high to turn on the device, the output characteristic (drain
current as a function of drain voltage) of device 100 will exhibit
negative differential resistance over a range of drain voltages.
This aspect of the invention is illustrated in FIG. 2, where device
drain current versus drain voltage is plotted for two different
gate voltages to show how the NDR mode can be affected by a
suitable selection of the gate voltage. It can be seen that for a
fixed gate voltage V.sub.GS, drain current I.sub.DS firstly
increases in a first region 210 with drain voltage V.sub.DS,
similarly to the behavior that is seen in drain current in a
conventional NMOS transistor. Surprisingly, however, in region 220,
beyond a certain drain voltage level, drain current decreases with
further increases in voltage, i.e. the device exhibits an NDR mode
with NDR characteristics. The drain voltage at which the drain
current begins to decrease (i.e., point 225 where
V.sub.DS=V.sub.NDR) is adjustable through suitable selections of
channel length, threshold voltage, etc. It should be noted that,
due to the relatively high channel dopant concentration and the
relatively thick gate dielectric, the threshold voltage of the NDR
FET will be significantly higher than that of a conventional
MOSFET, so that a larger than typical gate voltage is
correspondingly used for the NDR FET. As a result,
V.sub.GS>V.sub.NDR so that the vertical electric field is in the
direction such that electrons are attracted towards the gate
electrode, enhancing the NDR effect.
[0059] This behavior by device 100 of the present invention is
rather surprising, and is apparently the result of physical
mechanisms that have hitherto not been exploited in this area of
semiconductor devices and processing. In the prior art,
band-to-band quantum-mechanical tunneling of charged particles
(electrons and/or holes) from one side of a diode to the other side
is known to be the primary mechanism for NDR in tunneling diodes.
In contrast, for device 100 of the present invention, the physical
mechanism appears to be rapid trapping of electrons in the gate
insulator underneath the gate electrode, near to (within 1.5 nm of)
the semiconductor-insulator interface. Referring to the device
structure in FIG. 1, when device 100 is biased with a sufficiently
high gate voltage such that the channel of the device is in the
strong-inversion condition (i.e. when the gate-to-source voltage is
greater than the threshold voltage), a current flows between the
source and drain terminals 145 and 155 respectively of the device
if a small voltage is applied between such terminals. Since the
channel is configured to contain a relatively high p-type dopant
concentration, a vertical (in the direction perpendicular to the
semiconductor surface) electric field in the channel is large
(greater than 10.sup.6 V/cm). As the drain-to-source voltage
increases, the lateral (in the direction parallel to the
semiconductor surface) electric field increases, so that a
composite (horizontal+vertical) electric field exerting force on
inversion-layer electrons in the channel increases. Once this
composite electric field reaches a certain critical value (which of
course will be a function of the doping and geometry of the device)
electrons flowing from source 140 to drain 150 will gain sufficient
energy between collisions to surmount a semiconductor-insulator
interface potential barrier. Since the vertical electric field
component attracts the electrons toward gate electrode 110,
electrons enter insulator 130 and subsequently are captured by the
traps or storage nodes 135 in the insulator. The presence and
accumulation of negative charge in insulator 130 dynamically
increases a threshold voltage of device 100. In other words, the
electrons accumulated in the traps/storage nodes 135 operate to set
up a counter field that inhibits the movement of additional
electrons into the channel from the source, and reducing an
available channel current by reducing a density of electrons in the
channel region. Thus, the net effect created by the traps/storage
nodes 135 of the present invention is a drastic reduction in the
inversion-layer charge density and commensurate reduction in the
current flowing between the source and the drain. It can be seen
plainly that the amount of net current in the channel that can be
affected by the traps is a function of their number, concentration,
location, and the bias conditions imposed on device 100, all of
which are easily controllable and optimizable for any particular
environment, so that the onset conditions, strength and operating
region for a negative differential resistance mode can be tailored
and customized as needed.
[0060] It is noted that the present disclosure teaches that only a
single species of energetic carriers (hot electrons) are generated
in a channel region and trapped in insulator 130, and both of these
phenomena preferably occur in a substantially uniform manner
throughout the channel length. This operation, too, is distinctly
different from the case for a conventional NMOS transistor, in
which hot electrons are generally generated in the depletion region
of the drain p-n junction, leading to impact ionization and an
avalanche effect resulting in significant numbers of hot holes as
well as hot electrons. Typically, this effect is maximized at a
gate-to-source voltage which is lower than the drain-to-source
voltage (for example, at a gate voltage equal to one half the drain
voltage); hence in a conventional device the vertical electric
field in the channel near the drain junction attracts hot holes,
rather than hot electrons, toward the gate electrode. Clearly,
then, this explains why the creation of hot electrons in a
conventional NMOS transistor (even if it occurs incidentally)
cannot produce the negative differential resistance characteristic
as described in this invention. Furthermore it is well known that
the injection of hot holes into the gate insulator causes damage,
adversely affecting the performance and reliability of the NMOS
transistor. In the NDR-MISFET 100 of the present invention,
although holes are generated by impact ionization in the channel,
they are not injected (or their injection is substantially
eliminated to the point where it is negligible from an operational
perspective) into gate insulator 130 because the vertical electric
field repels holes from gate electrode 110.
[0061] As a point of further clarification, the mechanism
responsible for the NDR characteristic of the present invention
also does not require that NDR MISFET 100 be operating in a
conventional "pinch-off" condition, i.e., in which a gate-to-drain
voltage is lower than a threshold voltage so that the
inversion-layer charge density in the channel adjacent to the drain
is zero. In the pinch-off condition, the lateral electric field is
non-uniformly distributed in the channel between the source and
drain: the electric field increases gradually and linearly with
distance away from the source, and then increases exponentially in
the depletion region of the drain junction, so that the generation
of hot electrons occurs predominantly in the depletion region of
the drain junction, resulting in drain avalanche. In contrast, in
the present invention, NDR-MISFET 100 is preferably operated in a
"triode" region, so that the electric field increases uniformly
from the source end of the channel to the drain end. The drain
current saturates due to velocity saturation, not pinch-off, so the
current does not increase linearly with V.sub.DS (as seen generally
in FIG. 2).
[0062] In a preferred embodiment of NDR-MISFET 100, sufficient bias
is applied so that the electrons in the channel become so energetic
that channel hot electrons are created due to the high composite
electric field in the channel. These channel hot electrons have
sufficient energy imparted from the horizontal component of this
field to surmount the potential barrier at the
semiconductor-insulator interface and enter gate insulator 130
because the vertical electric field component attracts them toward
gate electrode 110. The electrons are captured by the traps or
storage nodes 135 in insulator 130; consequently the threshold
voltage of the transistor increases dynamically. More charge is
trapped as the drain-to-source voltage increases (for a constant
gate voltage), because the generation of hot carriers (and thus the
percentage of the current that is based on a hot carrier component)
correspondingly increases, and it is these hot carriers that are
trapped. As greater numbers of hot carriers are trapped, they
increase the threshold voltage and thereby reduce the mobile charge
density in the channel by a disproportionate amount (compared to
the hot-carrier current charge amount), thus decreasing the drain
current dramatically. This results in the negative differential
resistance in the output (drain current versus drain voltage)
characteristic. It can be seen also that more charge can be trapped
by increasing the vertical component of the field as well, since
this increases the likelihood that a charged carrier will be forced
into a trap 135 in dielectric layer 130 (the trapping rate), and
also increases a temporary storage/trapping time associated with
the charge. It is not necessary, nonetheless, to trap a significant
number of carriers, because even a small quantity stored in the
trapping sites can be sufficient to deplete the channel of mobile
carriers. It is also preferable to not increase the vertical field
to the point where some deleterious side effects (dielectric
breakdown or lack of fast reversibility of the NDR effect for
example) are seen. In other words, it is generally desirable to
have the charges rapidly trapped and de-trapped at a particular
rate that ensures that the device can be put into and out of an NDR
mode or operating region quickly, instead of being confined to
working within a particular region. Other techniques for increasing
the amount of trapped charges, and the trapping/detrapping rates
will be apparent to those skilled in the art. For instance, it may
not be necessary in fact in some applications, to make the
electrons "hot" because they will still be swept by the vertical
field into the trapping sites.
[0063] Thus, the present invention uses an approach that is in
contrast to that of prior art which has charge traps, such as U.S.
Pat. No. 5,633,178. In the prior art, the emphasis has been on
retaining the charge as long as possible, and this reference for
example specifically discloses using a refresh operation to keep
the logic state. Accordingly, there is no effort made in the prior
art to implement or sustain a dynamic process where charges are
continually trapped and de-trapped. In fact conventional
disclosures discourage such condition because it has been perceived
to date as an undesirable situation, and so this explains, too, why
such references do not describe configuring a FET channel to have a
stricture and doping characteristics that would facilitate this
type of trapping/detrapping mechanism.
[0064] The drain current and therefore the negative differential
resistance in this invention can be adjusted by varying the gate
voltage as seen in FIG. 2. As seen also in FIG. 2, the invention
can be seen as exploiting the fact that, as the threshold voltage
V.sub.t dynamically increases (because of the accumulation of
trapped charges) with increasing drain-to-source voltage V.sub.DS,
a drain current I.sub.DS (which is proportional to V.sub.g-V.sub.t)
will first increase, and then begin to decrease as V.sub.t begins
to exceed V.sub.g and thus dominate the behavior of the device.
Thus, a current value depicted in curve 228 will generally follow
the set of continuous curves 229 shown in FIG. 2 for a given
V.sub.g and varying V.sub.t. The so-called "peak-to-valley ratio,"
a key figure of merit in NDR devices, can also be tuned in the
present invention through suitable combinations of doping
concentrations, device geometries and applied voltages.
[0065] The present invention bears some resemblance to a leaky (or
volatile) floating gate storage device. However, the trapping and
de-trapping of electrons in gate insulator 130 of NDR-MISFET 100
are very rapid processes, as compared to the programming and erase
processes of a conventional floating-gate non-volatile memory
device, so that the threshold voltage of NDR-MISFET 100 can respond
dynamically to changes in a gate-to-source voltage and/or a
drain-to-source voltage. In fact, while conventional memory devices
require extensive pre-programming and erase cycle times to change
threshold states, the threshold voltage of the present device
responds to the applied source to drain bias voltage with minimal
delay. Thus, it can change and reverse a threshold (and thus
achieve an NDR mode) in substantially the same time as it takes for
device 100 to turn the channel on or off in response to such bias
conditions. For any given bias condition (fixed gate-to-source and
drain-to-source voltages), a steady-state condition exists in which
electrons are continually being rapidly trapped, stored, and
de-trapped, maintaining a fixed amount of net charge trapped in
gate insulator 130. The fixed amount of net charge trapped in the
gate insulator is dependent on the particular voltage bias
conditions applied to device 100. As the gate-to-source voltage
and/or the drain-to-source voltage changes, the balance of the
trapping and de-trapping processes changes, thereby changing the
fixed amount of net charge trapped in the gate insulator and
dynamically changing the threshold voltage. This means the net NDR
effect can be controlled through two different bias parameters, a
significant advantage again over conventional two terminal NDR
devices. Furthermore, the negative differential resistance
characteristic is seen not only as the drain-to-source voltage is
increased from zero Volts to a high value (such that hot electrons
are trapped in gate insulator 130), but also in the reverse
direction as the drain-to-source voltage is decreased from a high
value to zero Volts. It is expected, in fact that the threshold
voltage variability/reversibility can be tailored to be relatively
symmetric, so that it can thus be adjusted from a relatively low
voltage value to a relatively high voltage value in approximately
the same time required to adjust the threshold voltage from a
relatively high voltage value to a relatively low voltage
value.
[0066] As intimated above, the inventors believe that at higher
drain to source voltages another feature of the present invention
will be apparent, and that is the relatively high percentage of hot
carriers in the channel current. Namely, since hot carriers are
generated at a faster rate as the drain to source voltage increases
the inventors believe that the net result is that eventually the
hot carrier current component of the channel current will become
dominant, and thus eventually constitute the only current component
in the channel, even if it is extremely small overall. The relative
percentage of hot carriers in the channel current, therefore, can
be controlled, and this feature of the invention may be beneficial
in other application environments.
[0067] Another aspect of the invention that is potentially useful
is the fact that the trapping sites of the present invention can be
thought of as introducing a form of current/charge delay on a
single channel basis. The trapping time, temporary storage time,
and detrapping time making up such delay can be controlled as a
function of the applied horizontal and vertical electrical fields,
and this aspect might be exploited in other environments.
[0068] As explained herein, the p-type dopant concentration in the
surface region of the semiconductor underneath the gate electrode
should be relatively high. This is to ensure that the vertical
electric field is high (greater than 10.sup.6 V/cm) when the
transistor is turned on, to promote the creation of hot electrons
in the channel. A conventional NMOS transistor with channel length
less than 250 nm may (in some applications) have such a high
channel dopant concentration, but it will not achieve the results
of the present invention because this structure alone is
insufficient to bring about an NDR effect. In a preferred
embodiment, the doping concentration is made slightly graded, so
that the concentration of dopant is slightly lower at the
semiconductor surface, and then peaks at some relatively small
distance (below 30 nm) below the surface. This is done in order to
achieve a built-in electric field, which in turn serves to confine
electrons near the surface of the semiconductor, and thus further
enhances the injection of electrons into the trapping sites in the
dielectric. Again, other doping concentrations and techniques can
also be employed to induce this same phenomenon.
[0069] Furthermore, to minimize the possibility of drain avalanche,
a preferred embodiment herein teaches that the drain
dopant-concentration profile at the junction with the channel is
made to be relatively lightly doped. This not only minimizes the
impact ionization current between the drain and the channel, but
also has the side benefit of minimizing the capacitance between
them. By minimizing the drain junction capacitance to the channel,
the overall device switching performance is enhanced and the device
thus operates faster. Those skilled in the art will appreciate that
there are other ways to enhance the generation of hot electrons in
the channel in addition to those described herein, and the present
invention is not limited to any particular implementation of the
same.
[0070] A preferred embodiment also confines the relatively high
dopant concentration in the channel to the surface region only, so
that the dopant concentration in the channel region is initially
low (to confine electrons to the surface region), then increases,
and then is made lower away from the surface to achieve the effect
of low drain-junction capacitance. As alluded to earlier, the
present invention is not limited to any particular doping
concentration and profile of the dopant in the channel, because the
range of such parameters necessary to bring about the NDR effect
will vary from device to device of course, depending on the size,
geometry, intended function, etc., of the device, but these details
can be gleaned with routine and conventional simulation and
testings for any particular application, in the same manner as is
done for any other conventional semiconductor device. As explained
previously, the high surface dopant concentration in the channel
should also be offset from the highest dopant concentration in
drain region 150 through the use of lightly doped drain (LDD)
structures.
[0071] One additional and very desirable feature of the present
invention is that the drain voltage at the onset of negative
differential resistance can be scaled with the scaling of the CMOS
technology. In other words, as the transistor channel length is
reduced, the drain voltage required to reach the critical composite
electric field in the channel (corresponding to the onset of
negative differential resistance) is commensurately reduced. This
aspect of the invention ensures that the structures and methods
taught herein are guaranteed to have substantial and meaningful
future utility in advanced generations of devices and products that
are made using smaller geometries, lower bias conditions, etc. than
those currently available.
[0072] As is evident, a key feature of NDR-MISFET 100 is that
charge traps or storage nodes 135 exist in gate insulator 130, very
near to (within 1.5 nm of) the semiconductor-insulator interface,
so that electrons can be trapped and de-trapped very quickly. The
creation and distribution/location of such traps 135 can be
accomplished in any number of ways that are compatible with
conventional semiconductor processing techniques. For example,
traps 135 can consist of defect sites within gate dielectric 130 as
shown in FIG. 1, or interfacial traps 135 between two or more
layers of a multi-layered gate-insulator stack, or one or more
electrically isolated ("floating") conductor or semiconductor
electrodes 137 embedded within a gate insulator 130 (made up of two
layers 130' and 130'' sandwiching the embedded electrode 137) as
shown in FIG. 3. The only important consideration is that the
carrier trapping sites are configured for trapping carriers that
are electrically biased by an electrical control field (i.e., the
combined effect of bias conditions resulting from the channel
doping, the gate to source voltage, the source to drain voltage) to
move from the channel into insulator/dielectric layer 130. This can
be done in any number of different concentrations and arrangements
within layer 130 so that the channel current can be varied all the
way from essentially zero (no conduction) to full conduction in
accordance with the strength of the electrical control field.
[0073] In a preferred embodiment of the present invention, Boron
atoms incorporated into gate insulator 130 during a thermal
oxidation of heavily boron-doped silicon serve to provide defect
sites which readily trap charge. Alternative embodiments may employ
alternative dopant species such as Indium to form charge traps 135,
and the present invention is not limited to any particular dopant
species in this regard.
[0074] As mentioned, other possible embodiments may employ a
multi-layered gate insulator, for example a very thin interfacial
layer of silicon dioxide and a thicker layer of a second dielectric
material such as silicon nitride, with charge-trapping sites at the
dielectric-dielectric interface. Further possible embodiments may
incorporate islands of metal, silicon or germanium nanocrystals
embedded within gate insulator, or perhaps even a single continuous
floating gate electrode (FIG. 3) 137, to trap charge. In fact, the
present approach can be taken to an extreme to effectuate a new
type of non-volatile floating gate electrode for a flash memory
cell. It can be seen that complete non-volatility can be achieved
by simply locating the trapping sites sufficiently far away from
the interface so that the charge does not leak off after it is put
there (using conventional programming techniques). This type of
discontinuous floating gate electrode, formed as a multitude of
trapping sites distributed in the gate dielectric, may have
significant operating advantages over conventional continuous
electrode. In particular, in the distributed charge storage sites
aspect of the present invention, the trapped charge has less
mobility than an electron in a sheet type electrode, and thus the
charge storage sites are less likely to leak the stored charge
(individually and in the aggregate of course) to the source/drain
regions. This in turn means that the charge storage sites can be
located closer to the channel, and thus the gate insulating layer
can be thinner, the programming voltage and/or current smaller,
etc., Other methods and techniques for creating and distributing
traps 135 in a fashion suitable for achieving an NDR effect, and
any non-volatile effects as shown herein will be apparent to those
skilled in the art from the present teachings, and can be further
gleaned from the descriptions given in the aforementioned prior art
references for creating different types and arrangements of charge
traps.
[0075] To enhance the electron trapping stemming from the
generation of hot electrons in the channel (since it is the primary
mechanism responsible for the negative differential resistance
characteristic) the present disclosure also teaches a preferred
embodiment of an insulator 130 for retaining the trapped charge
under high gate-voltage bias. To avoid the loss of trapped
electrons to gate electrode 110 via tunneling through gate
insulator 130, the latter should have sufficient thickness to
prevent or at least substantially reduce such tunneling effects. In
a preferred embodiment insulator 130 is silicon dioxide formed by
either one of, or a combination of conventional thermal oxidation
and deposition techniques. As referred to earlier, to avoid
significant loss of trapped charge due to quantum-mechanical
tunneling, gate insulator 130 is formed to have a thickness of at
least 6 nm. Other implementations of insulator material for layer
130 include Silicon Nitride (Si.sub.3N.sub.4), or Silicon
Oxynitride (SiO.sub.xN.sub.y), or a high-permittivity dielectric
(relative permittivity greater than 8). The use of a
high-permittivity gate dielectric is advantageous for achieving
high areal gate capacitance, which facilitates adequate gate
control of the channel potential. Again, the present invention is
not restricted to any particular selection of thickness and
material for insulator layer 130, and other variations/techniques
for achieving a reduction in quantum-mechanical tunnelling known in
the art can be used to the extent they are compatible with the
present objectives.
[0076] For a preferred embodiment of this invention,
polycrystalline silicon (poly-Si) is used as the material for
gate-electrode 110. Other possible embodiments may utilize
alternative gate materials such as polycrystalline
silicon-germanium or metals, or any number of other conventional
materials.
[0077] An exemplary process for fabricating the NDR-MISFET in a
conventional CMOS fabrication facility is depicted in FIG. 4 A
standard p-type silicon starting substrate 120 is first processed
through standard isolation-structure-formation process steps; the
surface of substrate 120 is then moderately doped (to
.about.5.times.10.sup.18 cm.sup.-3) by a shallow Boron implant.
Subsequent to this a deposition of silicon dioxide (.about.6 nm) is
done (or thermal oxidation) in a manner so that the Boron becomes
incorporated into a gate insulator 130 near the surface of silicon
substrate 120. The resultant dopant concentration in the Si channel
near the surface is several times lower than it is directly after
the implant step above, due to segregation of Boron into gate
insulator 130. As noted earlier, the Boron dopant then acts
effectively as an electron trap during operation of device 100. In
contrast to some of the prior art implantation techniques discussed
earlier, the oxidation step appears to incorporate the Boron in a
manner that facilitates shallow electron traps, making it easier
for charge to move in and out of gate insulator 130.
[0078] Next, polycrystalline silicon is deposited and patterned to
form gate electrode 110. N-type dopant ions such as Arsenic are
subsequently implanted at moderate dose to form the lightly doped
source/drain regions self-aligned to gate 110, after which sidewall
spacers (not shown) are formed by conformal deposition and
anisotropic etching of an insulating layer such as silicon nitride.
Deep source/drain contact regions 140 and 150 are then formed by
ion implantation of Arsenic or Phosphorus and thermal annealing to
activate the dopants. Device fabrication is completed with standard
passivation, contact and metallization processes. While not
explicitly shown, it is apparent, because only conventional
processing is required, that other CMOS devices can be formed in
the same mask with the present NDR device 100, so that, for
example, memory and logic circuits can be formed at the same time
as the present device, and thus integrated directly to form a
conventional CMOS circuit having NDR capability. While the above is
explained with reference to a CMOS process, it will be appreciated
by those skilled in the art that other types of starting
semiconductor materials could also be used instead. Suitable and/or
optimal processing conditions for achieving the NDR mode in any
particular CMOS compatible environment will be easily designed and
determined by those skilled in the art through conventional
modelling and experimentation techniques.
[0079] As a final note it is preferable that during normal
operation of device 100 that a body contact (V.sub.B) should be
electrically biased (e.g. at a fixed potential of 0 Volts, as is
typical for n-channel MOSFETs). If body terminal (V.sub.B) is not
connected (i.e. is "floating" ) then the NDR behavior is
drastically diminished or even eliminated. This is because holes
which are generated by hot electrons will accumulate at the
channel-to-source junction, forward biasing the junction and
effectively reducing the transistor threshold voltage
(counteracting the charge-trapping effect of increasing the
threshold voltage), if the holes are not allowed to flow out of the
channel region through the body contact. Thus, if NDR-MISFET 100 is
implemented in a silicon-on-insulator substrate, or in a thin film
of polycrystalline silicon, care must be taken to provide a body
contact. This aspect of the invention can also be exploited of
course for certain applications, where it may be potentially useful
to be able to turn on or turn off the NDR mode by connecting or
disconnecting (switching) a bias voltage to body terminal V.sub.B,
respectively.
[0080] With the prior art, even if a device exhibiting adequate
negative differential resistance can be produced, it is still a
daunting task to integrate such a device into a conventional CMOS
process. Since the device in this invention is inherently an NMOS
structure, integration of this device with conventional logic CMOS
devices is straightforward. The illustrative flow in FIG. 4 allows
an NDR device process module to be completely de-coupled from a
conventional process, to allow for independent optimization of the
NDR devices and the CMOS devices. This makes it more
straightforward to scale the NDR device in this invention with
future generations of CMOS integrated-circuit technology.
[0081] It will be apparent to those skilled in the art the
aforementioned NDR device can be advantageously employed in both
memory and logic applications, and in the types of circuits as
described in the prior art above in references [1] through [10],
i.e., as a memory device, as part of a logic circuit, a
self-latching logic device, an amplifier, an oscillator, power
management, and many other environments where its useful
characteristics can be exploited.
[0082] While this invention has been described with reference to
illustrative embodiments, this description is not intended to be
construed in a limiting sense. It will be clearly understood by
those skilled in the art that foregoing description is merely by
way of example and is not a limitation on the scope of the
invention, which may be utilized in many types of integrated
circuits made with conventional processing technologies. Various
modifications and combinations of the illustrative embodiments, as
well as other embodiments of the invention, will be apparent to
persons skilled in the art upon reference to the description. Such
modifications and combinations, of course, may use other features
that are already known in lieu of or in addition to what is
disclosed herein. It is therefore intended that the appended claims
encompass any such modifications or embodiments. While such claims
have been formulated based on the particular embodiments described
herein, it should be apparent the scope of the disclosure herein
also applies to any novel and non-obvious feature (or combination
thereof) disclosed explicitly or implicitly to one of skill in the
art, regardless of whether such relates to the claims as provided
below, and whether or not it solves and/or mitigates all of the
same technical problems described above. Finally, the applicants
further reserve the right to pursue new and/or additional claims
directed to any such novel and non-obvious features during the
prosecution of the present application (and/or any related
applications).
* * * * *