U.S. patent application number 11/406331 was filed with the patent office on 2006-08-31 for management system, management apparatus, management method, and device manufacturing method.
This patent application is currently assigned to CANON KABUSHIKI KAISHA. Invention is credited to Hideki Ina, Takahiro Matsumoto, Satoru Oishi, Koichi Sentoku, Takehiko Suzuki.
Application Number | 20060195215 11/406331 |
Document ID | / |
Family ID | 29243926 |
Filed Date | 2006-08-31 |
United States Patent
Application |
20060195215 |
Kind Code |
A1 |
Suzuki; Takehiko ; et
al. |
August 31, 2006 |
Management system, management apparatus, management method, and
device manufacturing method
Abstract
A management system including an acquisition device for
acquiring actual processing results obtained by operating an
industrial device with a set parameter value and another parameter
value, and an estimated processing result, an inspection device for
inspecting the processing result obtained with the set parameter
value, and acquiring and accumulating an inspection result value, a
change device for changing the set parameter value on the basis of
the processing results acquired by the acquisition device and the
inspection result value obtained by the inspection device, an
evaluation device for evaluating a variation state of the
processing results on the basis of an inspection result value
accumulated by the inspection device, and a decision device for
deciding, on the basis of an evaluation result by the evaluation
device, a frequency at which the acquisition device is
executed.
Inventors: |
Suzuki; Takehiko; (Saitama,
JP) ; Ina; Hideki; (Kanagawa, JP) ; Sentoku;
Koichi; (Tochigi, JP) ; Matsumoto; Takahiro;
(Tochigi, JP) ; Oishi; Satoru; (Tochigi,
JP) |
Correspondence
Address: |
FITZPATRICK CELLA HARPER & SCINTO
30 ROCKEFELLER PLAZA
NEW YORK
NY
10112
US
|
Assignee: |
CANON KABUSHIKI KAISHA
Tokyo
JP
|
Family ID: |
29243926 |
Appl. No.: |
11/406331 |
Filed: |
April 19, 2006 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10423888 |
Apr 28, 2003 |
7069104 |
|
|
11406331 |
Apr 19, 2006 |
|
|
|
Current U.S.
Class: |
700/109 ; 702/83;
702/84 |
Current CPC
Class: |
Y02P 90/02 20151101;
Y02P 90/22 20151101; G05B 2219/32191 20130101; G05B 19/41875
20130101; G05B 2219/32182 20130101 |
Class at
Publication: |
700/109 ;
702/084; 702/083 |
International
Class: |
G06F 19/00 20060101
G06F019/00 |
Foreign Application Data
Date |
Code |
Application Number |
Apr 30, 2002 |
JP |
2002-129326 |
Claims
1. A management system which manages an industrial device,
comprising a function of changing a frequency of inspection
operation for changing a predetermined parameter value.
2. The system according to claim 1, wherein the frequency of the
inspection operation is changed on the basis of a result of the
inspection operation.
3. The system according to claim 1, wherein the frequency of the
inspection operation is changed on the basis of at least either of
an error cycle and error variations in the inspection
operation.
4. The system according to claim 1, wherein the frequency of the
inspection operation is decided on the basis of a statistical
result of the inspection operation.
5. The system according to claim 1, wherein the frequency is
decided when an inspection result is decided to become stable.
6-17. (canceled)
18. The system according to claim 1, wherein the industrial device
includes a semiconductor exposure.
19. The system according to claim 18, wherein the predetermined
parameter includes a parameter for aligning a wafer in the
semiconductor exposure apparatus.
20. A device manufacturing method of manufacturing a device by an
industrial device managed by a management system defined in claim
1.
21. A method of controlling a management apparatus which manages an
industrial device and an inspection apparatus for inspecting a
processing result by the industrial device, comprising a step of
changing a frequency of inspection operation of the inspection
apparatus for changing a predetermined parameter value in the
industrial device.
22. A storage medium which stores a control program for causing a
computer to execute a control method defined in claim 21.
23. A control program which causes a computer to execute a control
method defined in claim 21.
Description
[0001] This application is a divisional application of copending
U.S. patent application Ser. No. 10/423,888, filed Apr. 28,
2003.
FIELD OF THE INVENTION
[0002] The present invention relates to an industrial device
management system, a method, and an apparatus, which manage an
industrial device and, more particularly, to effective alignment in
a semiconductor exposure apparatus.
BACKGROUND OF THE INVENTION
[0003] Circuit micropatterning and an increase in density require a
projection exposure apparatus for manufacturing a semiconductor
device to project a circuit pattern formed on a reticle surface
onto a wafer surface at a higher resolving power. The circuit
pattern projection resolving power depends on the numerical
aperture (NA) of a projection optical system and the exposure
wavelength. The resolving power is increased by increasing the NA
of the projection optical system or shortening the exposure
wavelength. As for the latter method, the exposure light source is
shifting from g-line to i-line, and further, from i-line to an
excimer laser. With the excimer laser, exposure apparatuses having
oscillation wavelengths of 248 nm and 193 nm are available.
[0004] At present, a VUV (Vacuum Ultra Violet) exposure system with
a shorter oscillation wavelength of 157 nm and an EUV (Extra Ultra
Violet) exposure system with a wavelength of 13 nm are examined as
candidates for next-generation exposure systems.
[0005] Along with circuit micropatterning, demands have also arisen
for aligning at a high precision a reticle on which a circuit
pattern is formed and a wafer onto which the circuit pattern is
projected. The necessary precision is one-third the circuit line
width. For example, the necessary precision in a current 180-nm
design is one-third, i.e., 60 nm.
[0006] Various device structures have been proposed and examined
for commercial use. With the spread of personal computers, and the
like, micropatterning has shifted from memories, such as a DRAM to
CPU chips. For further IT revolution, semiconductor devices will be
further micropatterned by the development of MMIC (Millimeter-wave
Monolithic Integrated Circuits), and the like, used in
communication system devices called a home wireless LAN and a
Bluetooth, highway traffic systems (ITS: Intelligent Transport
Systems) represented by a car radar device using a frequency of 77
GHz.
[0007] There are also proposed various semiconductor device
manufacturing processes. As a planarization technique which solves
an insufficient depth of the exposure apparatus, the W-CMP
(Tungsten Chemical Mechanical Polishing) process has already been
used as a past technique. Instead, the Cu dual damascene process
has received a great deal of attention.
[0008] Various semiconductor device structures and materials are
used. For example, there are proposed a P-HEMT (Psuedomorphic High
Electron Mobility Transistor) and an M-HEMT (Metamorphe-HEMT),
which are formed by combining compounds such as GaAs and InP, and
an HBT (Heterojunction Bipolar Transistor) using SiGe, SiGeC, and
the like.
[0009] Under the present circumstance of the semiconductor
industry, many apparatus variables (=parameters) must be set in
correspondence with each exposure method and each product in the
use of a semiconductor manufacturing apparatus, such as an exposure
apparatus. The number of parameters to be optimized is very large,
and these parameters are not independent of each other, but are
closely related to each other.
[0010] These parameter values have conventionally been decided by
trial and error by the person in charge of introducing an apparatus
of a device manufacturer. A long time is taken to decide optimal
parameter values. If, e.g., a process error occurs after the
parameter values are decided, the parameter values of the
manufacturing apparatus must be changed again along with a
corresponding change in manufacturing process. Also, in this case,
a long time is taken to set parameter values.
[0011] In the semiconductor device production, the time which can
be taken until the start of volume production after the activation
of a manufacturing apparatus is limited. The time which can be
taken to decide parameter values is also limited. In terms of CoO
(Cost of Ownership), the operating time of the manufacturing
apparatus must be prolonged. To change a parameter value, which has
already been decided, it must be quickly changed. In this
situation, it is very difficult to manufacture various
semiconductor devices with optimal parameter values. Even a
manufacturing apparatus which can originally achieve a high yield
can only exhibit a low yield because the apparatus is used without
optimizing parameter values, resulting in a potential decrease in
yield. Such a decrease in yield leads to a high manufacturing cost,
a small shipping amount, and weak competitiveness.
SUMMARY OF THE INVENTION
[0012] The present invention has been made to overcome the
conventional drawbacks, and has as its object to allow optimizing a
predetermined parameter value of an industrial device during volume
production by the industrial device.
[0013] It is another object of the present invention to achieve
optimization of a parameter value during volume production while
preventing a decrease in volume production throughput.
[0014] According to the present invention, the foregoing object is
attained by providing a management system which manages an
industrial device, the system comprising a function of changing a
frequency of an inspection operation for changing a predetermined
parameter value in the industrial device.
[0015] According to another aspect of the present invention, the
foregoing object is attained by providing a management system
comprising acquisition means for acquiring actual processing
results obtained by operating an industrial device with a set
parameter value and another parameter value, and an estimated
processing result, inspection means for inspecting the processing
result obtained with the set parameter value, and acquiring and
accumulating an inspection result value, change means for changing
the set parameter value on the basis of the processing results
acquired by the acquisition means and the inspection result value
obtained by the inspection means, evaluation means for evaluating a
variation state of the processing results on the basis of the
inspection result value accumulated by the inspection means, and
decision means for deciding, on the basis of an evaluation result
by the evaluation means, a frequency at which the acquisition means
is executed.
[0016] In still another aspect of the present invention, the
foregoing object is attained by providing a method of controlling a
management apparatus which manages an industrial device and an
inspection apparatus for inspecting a processing result by the
industrial device, the method comprising a step of changing a
frequency of an inspection operation of the inspection apparatus
for changing a predetermined parameter value in the industrial
device.
[0017] Other features and advantages of the present invention will
be apparent from the following description taken in conjunction
with the accompanying drawings, in which like reference characters
designate the same or similar parts through the figures
thereof.
BRIEF DESCRIPTION OF THE DRAWINGS
[0018] The accompanying drawings, which are incorporated in and
constitute a part of the specification, illustrate embodiments of
the invention and, together with the description, serve to explain
the principles of the invention.
[0019] FIG. 1 is a view showing the schematic arrangement of an
overall exposure management system according to the first
embodiment;
[0020] FIG. 2 is a flow chart for explaining a sequence (OAP) of
optimizing the alignment variable value of a semiconductor exposure
apparatus according to the first embodiment;
[0021] FIG. 3 is a flow chart for explaining a wafer sampling
execution frequency decision processing according to the first
embodiment;
[0022] FIG. 4 is a graph showing an example of level decision
analysis for variations in wafer alignment precision according to
the first embodiment;
[0023] FIG. 5 is a graph showing another example of level decision
analysis for variations in wafer alignment precision according to
the first embodiment;
[0024] FIG. 6 is a graph showing still another example of level
decision analysis for variations in wafer alignment precision
according to the first embodiment;
[0025] FIG. 7 is a graph showing still another example of level
decision analysis for variations in wafer alignment precision
according to the first embodiment;
[0026] FIG. 8 is a flow chart for explaining wafer sampling
execution frequency decision processing according to the second
embodiment;
[0027] FIG. 9 is a graph showing an example of level decision
analysis for variations in wafer alignment precision according to
the third embodiment;
[0028] FIG. 10 is a flow chart for explaining the flow of a device
manufacturing process; and
[0029] FIG. 11 is a flow chart for explaining a wafer process.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0030] Preferred embodiments of the present invention will now be
described in detail in accordance with the accompanying
drawings.
[0031] In the following embodiments, the industrial device is a
semiconductor exposure apparatus, and the parameter to be optimized
is a parameter used for semiconductor exposure alignment
processing.
First Embodiment
[0032] The schematic arrangement and operation of a semiconductor
exposure apparatus management system (to be referred to as an
exposure management system hereinafter), according to the first
embodiment, will be described with reference to FIGS. 1 and 2. In
the following description, an alignment variable optimization
system corresponding to a volume production will be called OAP
(Optimization for Alignment Parameter in volume production). OAP is
applied to an exposure apparatus alignment system. Parameter values
in this specification include the numerical values of parameters,
which can be set by numerical values, and conditions which are not
numerical values, such as setting parameter choice data for
selecting a sample shot layout or an alignment method. Variables
also include apparatus variation elements such as a choice, and
generation conditions, in addition to numerical values.
[0033] FIG. 1 is a view showing the schematic arrangement of an
overall exposure management system according to the first
embodiment. The exposure management system of the first embodiment
includes a plurality of semiconductor exposure apparatuses (to be
referred to as exposure apparatuses hereinafter) 1 and 2, an
overlay inspection apparatus 3, a central processing unit 4, and a
database 5, which are connected by a LAN 6 (e.g., an in-house LAN).
The central processing unit 4 collects various measurement values,
and the like, from the semiconductor exposure apparatuses 1 and 2
and the overlay inspection apparatus 3, and saves them in the
database 5. While the exposure apparatuses 1 and 2 operate in
volume production, the central processing unit 4 optimizes
parameter values, and notifies the exposure apparatuses 1 and 2 of
them.
[0034] An OAP sequence according to the first embodiment will be
explained with reference to FIG. 2. Assume that a wafer to be
exposed is loaded into the exposure apparatus 1, and a
corresponding reticle is set in the exposure apparatus (not shown
in FIG. 2).
[0035] With a variable value (=parameter value, including a mark,
an illumination mode and an AGA shot arrangement) set for a job,
the exposure apparatus 1 performs global alignment, called AGA
(Advanced Global Alignment), in which the wafer position is
measured depending on the precision of an X-Y stage equipped with a
laser interferometer. A wafer magnification, wafer rotation, and
shift amount (all of which will also be called AGA data) at this
time are obtained (process 11). The acquired AGA data are
transferred to the PC 4, which controls OAP (data transfer 18).
[0036] The stage is driven again by using stage driving information
at this time. AGA measurement is performed with a parameter other
than that for the job, and a wafer magnification, wafer rotation,
and shift amount (AGA data) are obtained on the basis of the
measurement results (process 12). These AGA data are also
transferred as values to the PC 4, which controls OAP, similar to
the AGA data obtained with the previous parameter value set for the
job (data transfer 18).
[0037] In data transfer 18, all alignment signals detected in AGA
are transferred to the PC 4. A system which transfers an alignment
signal to the PC 4 is called ADUL (Alignment Data Up Load).
[0038] After all data concerning AGA measurement are obtained, the
wafer is exposed on the basis of the AGA data obtained with the
parameter value set for the job (process 13). Processes 11 to 13
are executed in the exposure apparatus 1 (or exposure apparatus
2).
[0039] The exposed wafer is developed and transferred to the
overlay inspection apparatus 3 in which the alignment result is
measured (process 14). Note that measurement of the alignment is
measurement of an actual amount (misalignment amount) by which a
pattern is misaligned and printed on a wafer regardless of exposure
by global alignment based on AGA data.
[0040] The PC 4, which controls OAP, stores, in the database 5, the
AGA data (including measurement results for parameter values set
for the job and for other parameters), such as the wafer
magnification, wafer rotation, and shift amount that have been
transferred from the exposure apparatus by data transfer 18
(process 15). The PC 4 performs another signal processing
(corresponding to a change in parameter value) for the alignment
signal detected in AGA. The PC 4 estimates a pseudo wafer
magnification, wafer rotation, and shift amount (pseudo AGA data),
and stores them in the database 5 (process 15).
[0041] The inspection result by the overlay inspection apparatus 3
is also transferred to the PC 4 (data transfer 19), and stored in
the database in correspondence with the AGA measurement values by
the exposure apparatus that have already been stored in the
database by the above process (process 15).
[0042] Another signal processing is signal processing using another
algorithm. For example, a self-template system is adopted in the
job setting pattern matching. The external PC 4 employs another
algorithm, e.g., a method of detecting a signal edge and detecting
a position, or an algorithm of approximating a signal by a
function, obtaining an edge, and then obtaining the center of the
edge interval. This allows selecting optimal signal processing in
consideration of a characteristic depending on the signal
processing algorithm, such as sensitivity to signal distortion.
This signal processing includes processing of changing a window
width which restricts the signal range for use even with the same
processing method.
[0043] Examples of this signal processing are as follows:
[0044] return symmetric processing
[0045] edge differentiation
[0046] template pattern matching
[0047] these processes using wavelet transformation as a
preprocess.
These methods are known techniques, and a detailed description
thereof will be omitted.
[0048] The correlation between the AGA data, the pseudo AGA data,
and the measurement result by the overlay inspection apparatus 3
that have been stored in the database is checked for a designated
wafer. Whether the parameter value set for the current job is
optimal is decided (process 16). The designated wafer is a wafer
set in advance by the operator for measurement from all wafers to
be exposed (e.g., every several wafers). Inspection of all wafers
in a lot may take a long time. At the beginning, all wafers in one
lot undergo overlay inspection. If the inspection result reveals
that the precision hardly varies between lots, the operator
designates wafers to be inspected such that the first wafer or
every several wafers in a lot are set to be inspected.
[0049] Whether the parameter value is optimal is decided by
comparing a predetermined evaluation value (e.g., a shift amount or
a rotation amount) with an evaluation value obtained with the
currently set parameter value. If there is a parameter value which
provides a better evaluation value than a threshold set in the PC 4
in advance by the empirical rule, or the like, the parameter value
is set as an optimal parameter value. The optimal parameter value
is reflected in the exposure apparatuses 1 and 2 for exposure of
subsequent lots, and used as a parameter value set for the job
(process 17). If a parameter value whose evaluation value is better
than that obtained with the currently set parameter value, but the
difference between these evaluation values does not exceed the
threshold, no job parameter value is changed. This is because the
difference between these evaluation values falls within the error
range, or the effect of changing a parameter value is weak, but a
change in parameter value may have an adverse effect (e.g., a
decrease in throughput due to the setting change time or
degradation of another exposure condition).
[0050] By repeating the above processing, the parameter value is
optimized and can be used for subsequent lots even upon process
variations.
[0051] The use of the OAP system can optimize alignment variable
values in volume production without examining a special wafer in
addition to volume production. The effective performance of the
exposure apparatus can be improved without decreasing the
productivity.
[0052] OAP according to the first embodiment will be briefly
expressed as follows: OAP is a feed forward system. That is, actual
alignment signals at an AGA shot are acquired or estimated with a
parameter value set for a job and another parameter value. The
alignment signals are compared with results by the overlay
inspection apparatus, and an alignment parameter value is optimized
for use in subsequent lots.
[0053] "Feed forward" and opposite "feedback" described in this
embodiment will be defined.
[0054] "Feedback" is so-called preprocessing. More specifically,
several send-ahead wafers are aligned and exposed before lot
exposure processing to obtain an offset by the overlay inspection
apparatus. The result is input as an offset value to the exposure
apparatus, and the remaining wafers in the lot are processed.
[0055] While CD-SEM measurement is performed especially for a
small-capacity lot, an offset is obtained by the overlay inspection
apparatus. In this case, the first embodiment can be more
effectively applied.
[0056] In "feed forward", no send-ahead wafer is used, but the
results of the preceding lot are used by various numerical
processes. "Feed forward" is proposed in consideration of the
situation in which the use of an expensive exposure apparatus with
a long Up Time is superior to preprocessing in terms of CoO. "Feed
forward" can be effectively applied to volume production on the
premise that currently set variables are almost optimal.
[0057] The flow of OAP processing shown in FIG. 2 can be briefly
described as follows.
[0058] (1) The exposure apparatus performs AGA by using parameter
values (including a mark, an illumination mode, and an AGA shot
layout) set for a job, and transfers the obtained AGA data and
alignment signal to the OAP control PC.
[0059] (2) The exposure apparatus performs the same AGA measurement
by using parameter values other than those set for the job, and
transfers the obtained AGA data and alignment signal.
[0060] (3) The alignment signals obtained in (1) and (2) are
processed by different processing methods to calculate pseudo AGA
data (another processing method is to, e.g., change the window
width).
[0061] (4) The exposure apparatus exposes the wafer on the basis of
the AGA measurement results using the set parameter values.
[0062] (5) The exposed wafer is transferred to the overlay
inspection apparatus 3 in which the misalignment amount of the
aligned exposure result is measured.
[0063] (6) The measurement result by the overlay inspection
apparatus 3 is acquired.
[0064] (7) A database (alignment signal, offset, wafer
magnification, and wafer rotation) is created from the AGA data
obtained in (2), the pseudo AGA data generated in (3), and the
inspection data acquired in (6).
[0065] (8) Whether the currently set parameter value is optimal is
decided.
[0066] (9) If the parameter value must be changed, the changed
parameter value is reflected in subsequent lots (Feed Forward
processing).
[0067] This is OAP basic processing. In the first embodiment, the
extraction frequency of wafers subjected to AGA measurement and
ADUL with a parameter value other than a set parameter value, i.e.,
wafers subjected to wafer sampling is optimized. Extraction
frequency optimization processing according to the first embodiment
will be explained.
[0068] In OAP, AGA measurement with a parameter value other than a
set parameter value and processing (ADUL) of sampling wafer
alignment waveform data are executed. In this case, a time for
processing unrelated to the production amount is required, and the
throughput may decrease in terms of only the processing speed in
comparison with an apparatus which does not perform OAP. In other
words, wafer sampling may decrease the throughput.
[0069] To prevent this, the first embodiment decides (optimizes)
the extraction frequency of wafers subjected to wafer sampling in
accordance with the apparatus, the process, the apparatus
environment, and the overlay precision obtained by the overlay
inspection apparatus 3. Wafer sampling is executed not for all
wafers, but at a proper frequency, which suppresses a decrease in
throughput.
[0070] If, for example, the apparatus is stable, and set parameter
conditions (parameter values) can cope with all volume production
lots without any change, the parameter conditions can be directly
used. However, the apparatus state, a state depending on the
process, and the like, actually change, and the set parameter
values are not permanently used. From this, in the first
embodiment, an appropriate wafer sampling frequency is decided in
accordance with the situation, and both optimization of a parameter
value during volume production and maintenance of the throughput in
terms of the processing speed are satisfied.
[0071] As a wafer sampling method, it is effective to analyze
database data collected in OAP.
[0072] It is effective to steadily check inspection data by the
overlay inspection apparatus. When a sample sequence {xi|I=1, 2, .
. . , N} complying with a given probability distribution is
supplied as statistical basic processing, the (sample) mean and
(sample) variance are defined by: x _ = 1 N .times. i = 1 N .times.
x i ##EQU1## .sigma. 2 = 1 N .times. i = 1 N .times. ( x i - x ) 2
. ##EQU1.2##
[0073] These values are representative statistics calculated from
the sample sequence, and are basic values used in many image
processing applications. The square root of the (sample) variance
is called the standard deviation.
[0074] The offset between a result by the overlay inspection
apparatus 3 and AGA data is monitored from these basic statistical
calculations. If the 3.sigma. value greatly deviates from a set
allowance, or variations much shorter than the lot exchange cycle
exist, a larger wafer sampling count merely increases the need for
changing a parameter value. The apparatus becomes unstable, and the
changed parameter value cannot be satisfactorily applied to wafers
in the next lot. That is, if the apparatus performance cannot be
fully exploited, the apparatus suffers from an unstable factor,
which cannot be eliminated by optimization of a parameter value,
and the apparatus must be maintained. In this case, the operator is
warned of this by an error display, or the like.
[0075] Short-term variations mean variations in offset between
wafers in lots during the same period. To the contrary, long-term
variations mean variations in offset between, e.g., a given lot and
a preceding lot. Such variations can be discriminated by the above
expressions because a given process will be executed next after
several months in typical semiconductor manufacture. If the error
generation probability distribution is a random one, such as a
normal distribution, a larger number of sampling wafers can
stabilize data with high reliability because of the averaging
effect. However, with an error with which the sampling value cannot
represent variations and, e.g., gradually shifts, such as an error
occurred in the CMP process, a larger number of sampling wafers
cannot provide a stable result.
[0076] OAP can be effectively applied when the alignment precision
can be kept at a predetermined level by optimization of the
alignment parameter value of the apparatus (including optimization
of signal processing such as image processing) against any factor
which decreases the alignment precision.
[0077] The stability of the alignment precision is also influenced
by the stability of the apparatus and the process stability of the
manufacturing line. The factor which decreases the alignment
precision is analyzed by changing parameter conditions, but it is
difficult to specify the factor.
[0078] The extraction frequency (wafer sampling frequency) of
wafers subjected to wafer sampling is decided on the basis of a
database of overlay precision results (measurement results by the
overlay inspection apparatus) and precision results of signal
processing based on the alignment waveform. Wafer sampling
frequency decision processing according to the first embodiment
will be explained in detail.
[0079] Wafers subjected to OAP, i.e., wafers subjected to wafer
sampling are desirably all wafers at the beginning of the process.
This is because the stability of the apparatus or process is not
known as the beginning of the process.
[0080] If it is determined in OAP from wafer sampling results and
wafer inspection results by the overlay inspection apparatus 3 that
a parameter value other than one set for the current job is more
proper, this parameter value is reflected in the parameter value of
processing for the next lot. That is, the variable value of the
succeeding lot is changed to reflect the result of the preceding
lot. For this purpose, an initially set job parameter is used as a
reference parameter and fluctuations in offset data and alignment
waveform for the reference parameter stored in the external PC4.
The external PC4 also calculates and stores fluctuations in offset
data and alignment waveform unit different parameters. The external
PC4 compares the fluctuations for the reference parameter with the
fluctuations for different parameters, and determines whether a job
parameter more effective than the reference parameter exists.
[0081] Whether a job parameter is effective is decided by, e.g.,
analyzing the variation distribution of alignment data at AGA shots
on a wafer, which provides the trend of stability. Alignment data
includes a shift amount from an ideal matrix depending on the stage
precision in global alignment, and a measurement result by the
overlay inspection apparatus. Variations in the database are
checked by rearranging the database by the OAP controller, thus
attaining the trend of wafer sampling.
[0082] Whether the alignment precision to a wafer in each process
(step) is high or low is determined from an inspection result by
the overlay inspection apparatus. In a high-precision step, the
wafer sampling count suffices to be small because of fewer
variations between all samples. A method of setting the number of
wafers subjected to wafer sampling, e.g., the number of wafers in
each lot can be decided from the throughput, allowance precision,
and margin.
[0083] For example, the threshold of the standard deviation for
each lot is set to thresholds 1 to 3, as shown in FIG. 4, and the
extraction frequency is decided from the standard deviation of each
lot. That is, overlay inspection is executed for all wafers in
several initial lots, the trend of precision is monitored, and the
overlay precision is ranked, details of which will be described
later. The 3.sigma. value representing variations is ranked by the
threshold, and an extraction frequency corresponding to the rank is
decided. In wafer sampling after the extraction frequency is
decided, the alignment precision is monitored in time series. If
the precision decreases, the wafer sampling execution frequency is
increased. In this manner, the frequency is changed in accordance
with the situation.
[0084] Sampling for each lot will be exemplified. Factors which
decrease the alignment precision include environmental variations
for each process, apparatus, and line, as described above. Which
factor decreases the alignment precision must be separately
analyzed. According to the basic concept of the wafer sampling,
many wafer data are obtained at the beginning of the process, and
the wafer sampling execution frequency is decided from the margin
for the data allowance precision.
[0085] FIG. 3 is a flow chart for explaining wafer sampling
decision processing. In the first embodiment, the wafer sampling
execution frequency is set on the basis of the shift amount between
an inspection result by the overlay inspection apparatus and AGA
data without performing ADUL (wafer sampling) for initial lots. If
the shift amount is large and the parameter value must be changed,
the parameter value is optimized by OAP, as shown in FIG. 2, and
the above-described processing is executed.
[0086] Exposure processing for initial lots starts with the current
job setting which has already been decided (step S20). Alignment
overlay data in exposure of all wafers in each initial lot are
inspected by the overlay inspection apparatus at the start of each
exposure process (step S21).
[0087] The vertical structure of an alignment mark changes between
processes in the semiconductor manufacturing process. The alignment
offset of the exposure apparatus must be obtained in all process
wafers by using the overlay inspection apparatus. The results are
communicated to OAP. The communication means is the LAN 6 in the
first embodiment, but may be another known communication means.
[0088] The inspection results are statistically analyzed (step
S22). In the first embodiment, (1) the variation cycle and
variation width of the shift amount between AGA data and the
inspection result of each wafer in each lot are checked. (2)
Variations in the 3.sigma. value of the shift amount of each lot
are checked.
[0089] The signal variation cycle can be easily obtained by
checking an increase/decrease in shift amount value and checking
the sign of the numerical value. FIGS. 5 and 6 show variations in
shift amount and the variation cycle. In FIGS. 5 and 6, T1 and T2
represent variation cycles, and D1 and D2 represent variation
widths. Sampling in at least half the variation cycle can restore
the original variation waveform on the basis of the sampling
theorem. Wafer sampling is performed based on the variation
waveform.
[0090] If variations have any regularity, the 3.sigma. value can be
suppressed to be small with a small sampling count in consideration
of the cycle. In FIG. 5, sampling suffices to be done for every
three wafers, for T1=6. For twenty-five wafers in a lot, eight
wafers are subjected to sampling.
[0091] This method can be applied to cyclic variations, but cannot
be applied to random variation. The variation width is decided by
3.sigma. on the basis of the standard deviation .sigma.. FIG. 4 is
a graph showing the 3.sigma. values of the shift amounts, which are
obtained on the basis of inspection results by the overlay
inspection apparatus 3 and plotted for several lots. The precision
level is divided into a plurality of thresholds and determined
within the allowable precision range.
[0092] The shift amount whose 3.sigma. value is equal to or lower
than threshold 3 is stable, and the job variable can be decided to
be optimal. If this state is confirmed to stably continue, wafers
in one lot are decided to be satisfactorily sampled. In this wafer,
wafer sampling can be decided from the level of the 3.sigma.
value.
[0093] For example, the number of wafers can be set to ten for
threshold range S2, and fifteen for threshold range S3. The number
of wafers at each threshold can be changed by decision of the
process manager.
[0094] If the 3.sigma. value is stable over a specific number of
lots, the job variable can be decided to be reliable for volume
production. As for wafer sampling, conditions can be fixed unless
the process or apparatus changes. Accordingly, the processing ends
(step S23).
[0095] The specific number of lots can be set by the process
manager. If the 3.sigma. value cannot be confirmed in step S23 to
be stable over the specific number of lots, the processing advances
to step S24. In step S24, whether the currently set parameter value
is proper is determined on the basis of variations in shift amount.
If YES in step S24, the number of wafers subjected to wafer
sampling is decided in accordance with the threshold in step S25
(threshold range S4: twenty wafers/It, threshold range S3: fifteen
wafers/lot, threshold range S2: ten wafers/lot, and threshold range
S1: five wafers/lot). In step S27, inspection by the overlay
inspection apparatus 3 is performed at an execution frequency
decided in step S25.
[0096] If NO in step S24, the processing advances to step S26. In
step S26, OAP processing shown in FIG. 2 is executed to optimize
the parameter value. After that, the processing is repeated from
step S21. The current parameter value may be determined to be
changed when the 3.sigma. value decreases by two threshold levels
between preceding and succeeding lots.
[0097] As described above, setting of the number of wafers to be
sampled and decision of whether the current job parameter setting
value is proper can be automatically executed on the basis of the
threshold. In general, when the process and apparatus job parameter
setting value are not decided, conditions are changed and
confirmed, and the precision may also vary. This case will be
exemplified.
[0098] For example, setting an AGA shot will be described. In
measurement, the measurement span can be prolonged by setting AGA
shots as close to the periphery of the wafer as possible, and the
precision of the AGA measurement value increases. However, the
alignment mark asymmetry caused by a process error called WIS
(Wafer Induced Shift) degrades as shots are set closer to the
periphery of a process wafer in CMP, or the like.
[0099] In deciding AGA shots, the alignment precision is monitored
and examined by changing the setting to the outermost position,
slightly inner position, and inner position. In this case, which
position is finally set as an AGA shot is decided from the AGA
measurement reproducibility, inspection results by the overlay
inspection apparatus after exposure, and the like. Alternatively,
variations in alignment precision may be monitored while changing
settings such as the number of AGA shots, the illumination mode,
and the processing window.
[0100] FIG. 7 is a graph showing plotted precision results by the
overlay inspection apparatus (AGA data such as the wafer
magnification, wafer rotation, or shift amount are stored in a
database and its change is monitored in time series).
[0101] The allowable precision range is divided at thresholds 1 to
3 to divide the precision range into ranges S1 to S4, which can be
used to determine the precision level.
[0102] If the first data falls within precision range S1 in FIG. 7,
processing starts for five wafers/lot after all data are acquired
because of high precision. This setting is not changed if the
precision does not decrease after several lots. If data degrades,
as represented by B, the number of samples is increased to ten
wafers/lot for several lots because B is at level S2. If the
precision settles, as represented by C, wafer sampling is performed
for five wafers/lot. If the precision abruptly decreases, as
represented by D, the job parameter condition (parameter value) is
set again. This is because the apparatus may degrade due to any
factor or the process factor must be set again. As long as the
precision is stable for a long term, the number of samples is
decreased to one wafer/lot, and the precision is monitored. Even if
the precision remains stable, one wafer/lot may be kept
unchanged.
[0103] For gradual variations in 3.sigma. value, the number of
wafers to be sampled for each lot is decided in accordance with the
threshold range with the current job parameter value. For example,
when the setting range is set to three levels, as shown in FIGS. 4
and 7, the number of wafers is set to five, ten, fifteen and 20, in
an order from a high-precision range (from S1 to S4) (Step
S25).
[0104] When the 3.sigma. value abruptly changes with a large
variation width, as represented by a range from C to D in FIG. 7,
it is also effective to change process conditions and monitor the
change because any apparatus state or process state may change. In
the first embodiment, OAP processing described with reference to
FIG. 2 is executed to optimize the parameter value (step S26). The
exposure apparatus 1 (or 2) is instructed via the LAN 6 to change
the set parameter value, and then changes the job setting.
[0105] The parameter value change timing is applied to the next lot
in feed forward. As another application example, if the lot is an
initial one and conditions have not been stabilized yet, the job
variable condition can also be changed in a subsequent lot when the
inspection result is decided to become stable after a plurality of
wafers in a given lot. In this case, feedback processing is
executed. After the process is changed in step S26, inspection of
all wafers by the overlay inspection apparatus 3 realizes
high-precision inspection (step S21).
[0106] For example, when the precision is to be increased from a
precision required for the process, conditions for each process or
apparatus can be set by changing the threshold and allowable
precision condition for each process. Apparatuses may have many
differences, and it is preferable to set the allowance for each
apparatus because the apparatus difference can be individually
coped with.
[0107] If the number of wafers is decided in step S25, the exposure
apparatus performs OAP and exposure processing, and then, the
overlay inspections apparatus inspects sample wafers (step S27). By
repeating a series of processes, a proper execution frequency of
wafer sampling can be automatically decided. The execution
frequency decided in step S25 is set as the wafer sampling
execution frequency in the exposure apparatus after the processing
ends in step S23.
[0108] A factor which decreases the precision can be analyzed by
measuring an alignment measurement waveform accumulated in a
database in OAP or measuring an actual wafer shape by a CD-SEM. If
the cause is found and the precision becomes stable, the number of
wafers to be sampled can be decreased, suppressing a decrease in
throughput in ADUL. Lot management optimal for both a decrease in
throughput and precision guarantee can be achieved by performing
wafer sampling in accordance with a measurement result by the
overlay inspection apparatus in the OAP database.
[0109] The number of wafers to be sampled can be changed by each
keyboard input as far as OAP or a touch panel console connected to
an OAP controller can be controlled by the PC base.
Second Embodiment
[0110] FIG. 8 is a flow chart for explaining processing of deciding
alignment data other than a job variable value according to the
second embodiment. In the first embodiment, the parameter value
(including signal processing) set for a job is fixed, an initial
lot is processed without transferring ADUL data with an alignment
waveform, and the wafer sampling execution frequency is decided
from measurement results by the overlay inspection apparatus 3. In
the second embodiment, ADUL for alignment waveform data is executed
from an initial lot under a condition other than the job variable
value, and the precision result is analyzed to decide the wafer
sampling execution frequency.
[0111] A case wherein the job variable value is set, but the
precision does not satisfy a specific value, and the job variable
value is further changed to increase the precision, will be
described.
[0112] Wafer sampling is performed with a job variable value and
another parameter condition (parameter value) set for all wafers
(step S31). Exposure and developing are done on the basis of an
alignment result obtained with a parameter value set for a job in
advance, and an overlay precision result is evaluated by an overlay
inspection apparatus. A pseudo exposure result is examined under a
condition other than the job variable value on the basis of the
alignment result of exposure with the set parameter value as an
inspection result by the overlay inspection apparatus. "Pseudo"
means examination at the measurement precision of the exposure
apparatus without actual exposure. An alignment signal waveform is
also acquired, and thus, various signal processes can also be
examined. Processing other than signal processing, which is
actually used in alignment by the exposure apparatus for exposure
processing, can also be performed. This examination is executed by
statistical processing using a plurality of wafers in a lot,
obtaining an examination result (step S33).
[0113] The specific number of lots is set in advance, and if the
precision falls within an allowable precision range for the
specific number of lots, the processing ends (step S34). If the
precision is not kept for the specific number of lots, whether to
change the current set parameter value is determined.
[0114] The precision is compared by the 3.sigma. value between the
current processing and processing under a condition other than the
job variable value. If the job variable value varies at a reduced
level within a lot, the setting is changed to the number of wafers
to be sampled that is set in advance (classified by the threshold
level in the first embodiment), in accordance with the
precision.
[0115] If the precision does not have any margin for a demanded
precision, or the 3.sigma. value becomes more stable upon a change
in the job variable value, the exposure apparatus is instructed to
change the parameter value set for the current job to another
parameter value (step S37). In this case, it is also possible to
further increase the wafer sampling frequency in accordance with
the situation, and then return the processing to step S31.
Third Embodiment
[0116] The third embodiment will be described. The third embodiment
prevents a decrease in throughput in performing OAP according to
the first embodiment. As described in the first embodiment, AGA
data acquisition (AGA measurement or ADUL) with a parameter value
other than a job parameter value in OAP requires a time for
processing unrelated to the production amount. The throughput may
decrease in terms of only the processing speed in comparison with
an apparatus which does not perform OAP. To prevent this, the first
embodiment optimizes the wafer sampling frequency.
[0117] In the third embodiment, an alignment precision and job
parameter value, which are measured by an overlay inspection
apparatus, AGA measurement data of parameter values except for the
job setting parameter value, and various signal processing results,
are continuously decided in time series in order to comprehensively
decide an environment where the apparatus and process are located.
Accordingly, the apparatus performance is determined in accordance
with the precision rank within a necessary precision range, and the
apparatus CoO is maximized in terms of both the throughput and
performance.
[0118] In OAP, it is ideal to set and confirm all parameter values
other than a job parameter value during the operation of the
apparatus. However, this decreases the throughput. Thus, predicted
parameter value candidates are assumed to acquire measurement data
and decide them by an external controller.
[0119] The third embodiment provides a method of maximizing the
performance of the apparatus operation by automatically monitoring
the apparatus for, e.g., a situation (warning decision before
exposure), in which the apparatus performance cannot be satisfied
by decision of a parameter change, decision of the acquisition
frequency of a parameter value other than a job parameter value and
for an exposure apparatus, an alignment signal processing waveform,
execution/non-execution of OAP itself, and a change in
parameter.
[0120] FIG. 9 is a graph according to the third embodiment. The
ordinate represents the precision serving as a criterion for
evaluating the overlay performance. The precision is set to many
threshold levels, within an allowable precision range, for each
semiconductor process. In this example, three levels, i.e.,
thresholds 1 to 3 are set.
[0121] The abscissa represents the result of monitoring in time
series the overlay performance of a single exposure apparatus for
every identical step in the semiconductor process. Each of sections
A to E indicates a section in which a change in precision kept
monitored for a lot in the semiconductor process step falls within
a given threshold range. Also, OAP sequence operation of an
exposure apparatus is different in each of the sections.
[0122] The definition and content of the precision along the
ordinate will be described. The precision criterion is an
evaluation criterion based on an error after exposure by the
exposure apparatus and measurement by the overlay inspection
apparatus. Another criterion is a residual error amount after
obtaining the wafer in-plane error of the wafer magnification,
wafer rotation, or orthogonality by AGA measurement and increasing
the precision by the stage. The correlation between a result by the
overlay inspection apparatus and the residual error amount is
attained to predict even the pseudo AGA precision result of a
parameter value other than a job parameter value. These evaluation
data can be stored in a database 5 of FIG. 1, and evaluated and
changed in accordance with the apparatus operation situation and
use purpose.
[0123] The definition of the threshold will be described. The
threshold is defined as follows. The threshold is set by dividing
the precision allowance for each process of each semiconductor
device into multiple stages. Threshold 1 or less is a precision
level at which a job parameter and signal processing are decided to
be optimal with a margin enough for the overlay precision
allowance. The range of threshold 2 higher than threshold 1 is a
section in which the trend of decreasing the precision is checked
by monitoring the evaluation database stored in the database 5, and
if the precision evaluation degrades, the inspection frequency of
wafers in a lot, which are inspected by the overlay inspection
apparatus, is increased.
[0124] The range of threshold 3 higher than threshold 2 is a
section in which OAP is applied because the overlay precision
margin decreases as a result of monitoring the database accumulated
in the database 5. Application of OAP is determined at a level
higher than threshold 2. At this precision level, a PC 4 compares
and examines a plurality of signal processes for an alignment
signal waveform and data mining, such as various multivariate
parameter optimization methods. The PC 4 selects, applies, and
examines optimization signal processing. In section C of FIG. 9,
line segments a to e represent that a plurality of combinations of
OAP job parameter values are selected. Processing at each broken
portion shows a change in precision data stored in the database
after optimization examination based on data mining and sample
processing. Broken lines a, c, d, and e represent pseudo AGA
results, and the solid line of line segment b represents a
precision with the current job parameter value. Line segment b
corresponds to the current job setting value, and overlay data by
the overlay inspection apparatus exists because the exposure
apparatus performs actual exposure. In this case, a combination of
parameter values other than the job setting value that is
represented by broken line e is equal to or lower than threshold 1
and is optimal.
[0125] If the precision exceeds threshold 3, the parameter is
changed to a parameter optimized by OAP. Note that the optimal
parameter condition in section B is kept for a specific number of
lots to ensure the reliability of changing the parameter value.
Even with threshold 2, the parameter can also be changed to an
optimal parameter as far as the stability is ensured for the
specific number of lots. When the stability is not ensured for the
specific number of lots, the precision may decrease. A warning
limit (not shown) can be set between threshold 3 and the allowable
precision, and if the precision exceeds this limit, to immediately
return the parameter value to an optimal one.
[0126] In this example, a combination of optimal parameters as a
result of examining optimization in section B is read out from the
database and actually applied.
[0127] Management operation in a section according to the third
embodiment will be explained. Each section is a range where the
operation is changed for each section by a management system
according to the third embodiment. In section A, the precision is
very stable at a level of threshold 1 or less, and no OAP is done.
Apparatus parameters, such as job setting AGA data and data on
processing results, are accumulated in the database 5 and overlay
inspection operation continues, so as to monitor job setting
measurement results in order to monitor the precision with a job
setting parameter value.
[0128] In section B, between threshold 1 and threshold 2, the
allowable precision margin decreases. To confirm OAP application
and level decision, the number of inspection sample wafers in a lot
that are inspected by the overlay inspection apparatus is changed
on the basis of job setting AGA processing data confirmed in the
database 5 and wafer sampling data by the overlay inspection
apparatus. If the precision decreases, the management system of the
third embodiment increases the inspection frequency of the overlay
inspection apparatus.
[0129] In section C, OAP is performed, the PC 4 requires AGA data
other than a job parameter by OAP and the exposure apparatus, and
optimization of various parameters and optimization of signal
processing are simulated, predicted, and examined in OAP. The PC 4
performs various signal processing, and compares and examines
precision evaluation data stored in the database 5 to examine
optimal parameters. On this stage, a parameter optimal enough and
signal processing is selected and examined in OAP.
[0130] Section D represents a result of setting optimal parameters.
Since the precision range of threshold 1 is confirmed, no OAP is
executed again.
[0131] OAP and exposure apparatus operation in each section will be
described in detail.
[0132] In section A, the precision is stable enough for the
precision allowance. A job parameter set for a lot is a
satisfactory set value, and no parameter need be changed by OAP. In
this region, a decrease in apparatus throughput can be prevented by
stopping acquisition of AGA data other than a job parameter that
decreases the throughput. In this region, AGA measurement data
other than a job parameter need not be acquired by ADUL and stored
in the database, which is referred to by the PC 4. ADUL can be
determined not to be executed when lots with precisions lower than
threshold 1 continue by specific lots. The specific lots can be
changed, and the setting may be decided by the job setting.
[0133] In section B, the precision gradually decreases. In this
example, the precision exceeds threshold 1. When the precision
exceeds threshold 1, no parameter is changed. In section C, the
precision exceeds threshold 2. In this case, the margin for the
allowable precision further decreases, and OAP is actually applied.
The apparatus is operated so as to acquire data with parameter
values other than a job parameter necessary for OAP. As for AGA,
alignment measurement of the wafer position is done except for the
job setting, acquiring alignment waveform data. Pseudo AGA
operation is performed on the basis of an alignment signal acquired
by the PC 4, and a combination of optimal parameters is stored in
the database. While the overlay precision is recorded in the
database, overlay precision evaluation data accumulated in the
database 5 are sequentially monitored unless the precision exceeds
threshold 2. If the precision tends to decrease (the precision is
decided to decrease when precision evaluation data exhibit a
continuous decrease for specific lots), the frequency of acquiring
AGA data other than a job parameter is increased to improve the
reliability of deciding parameter values other than a job
parameter. However, an increase in acquisition frequency decreases
the throughput.
[0134] In section C, the precision exceeds threshold 3 (solid line
in section C represents apparatus operation with the current job
parameter value). In this case, the margin for the allowable
precision further decreases, and the parameter is optimized and
changed. A job setting parameter candidate in section C has already
been determined, and can be quickly applied.
[0135] Broken lines a, c, d, and e represent predicted application
examples. Within the range of threshold 1, which is an optimal
parameter setting in section C, a parameter optimization example
represented by broken line e is performed. In this example, the
precision returns to threshold 1. The precision may not decrease to
threshold 1. In this case, an optimal parameter value is
selected.
[0136] Section D represents the state of the job parameter value,
which is optimized by OAP in section C. In this example, the
precision becomes stable.
[0137] The third embodiment has been described with reference to
FIG. 9. In this embodiment, the operation status of the apparatus
is finely evaluated in accordance with the multilevel precision
evaluation criterion. The operations of the apparatus and
management systems are changed, effectively achieving setting of an
optimal parameter and selection of signal processing, which
determine the apparatus performance.
[0138] In the third embodiment, the allowable precision required
for each semiconductor process is divided into multilevel
thresholds for a plurality of precision evaluation criteria. The
apparatus performance is evaluated in time series at the respective
thresholds, and the apparatus operation is changed in accordance
with variations in threshold. In the example of FIG. 9, four modes
(sections A to D) are set for the apparatus operation. The
operation can be changed in accordance with an industrial apparatus
for use.
Fourth Embodiment
[0139] A method of changing the threshold level in accordance with
the industrial apparatus and a method of predicting and setting an
optimal parameter will be described as the fourth embodiment.
[0140] In an alignment example of the exposure apparatus, there can
be set a threshold level for a decision level used to optimize an
alignment parameter, a threshold level at which the apparatus is
operated with a parameter other than a job setting to decide the
frequency of acquiring data on operation with the parameter other
than the job setting in order to compare and examine candidate
parameter values for optimizing a parameter, and a threshold level
at which the job setting parameter can be decided not to be changed
because the set parameter satisfies the allowable precision level
and stable apparatus performance can be continuously obtained. With
a means for monitoring the apparatus performance in time series,
these thresholds can be changed against variations in apparatus
status. As the threshold level division method, measurement data
with a job parameter and another parameter by OAP, and measurement
data by the overlay inspection apparatus may be sequentially
accumulated, and after a time-series variation trend is confirmed,
may be classified. Alternatively, data may be classified in advance
in accordance with the overlay precision of the apparatus with
respect to the semiconductor process. A semiconductor process step
with a high overlay precision in the exposure apparatus has a
relatively stable overlay precision, and the margin for the
allowable precision can be set to be large.
[0141] A semiconductor process step with a low overlay precision in
the exposure apparatus cannot ensure any margin for the allowable
precision. Thus, a parameter value and signal processing must be
selected while a PC 4 precisely predicts optimization. In this
case, data, which have been acquired and accumulated in a database,
are analyzed and predicted. For example, the correlation between an
AGA measurement result and a result by the overlay inspection
apparatus is obtained, and the AGA measurement result can be
adopted. The alignment mark interval (variations between mark
intervals: respective mark intervals have the same design value,
and thus, evaluation may employ variations between mark elements)
used in alignment signal processing can be used as an evaluation
criterion by obtaining the correlation between each AGA measurement
shot and a residual error after AGA measurement correction.
[0142] The correction between parameters can be effectively
obtained by an optimization method using data mining, such as a
decision making system or neutral network method. The correlation
between changes in parameters and various precision evaluation
criteria accumulated is optimized by data mining. A smaller number
of predicted parameter candidates can be compared, optimizing
apparatus parameters.
Fifth Embodiment
[0143] A semiconductor device manufacturing process using the
above-described semiconductor exposure apparatus will be explained.
FIG. 10 shows the flow of the whole manufacturing process of
manufacturing a semiconductor device. In step S201 (circuit
design), a semiconductor device circuit is designed. In step S202
(mask formation), a mask having the designed circuit pattern is
formed. In step S203 (wafer formation), a wafer is formed using a
material such as silicon. In step S204 (wafer process), called a
pre-process, an actual circuit is formed on the wafer by
lithography using the prepared mask and wafer. Step S205
(assembly), called a post-process, is the step of forming a
semiconductor chip by using the wafer formed in step S204, and
includes an assembly process (dicing and bonding) and a packaging
process (chip encapsulation). In step S206 (inspection), the
semiconductor device manufactured in step S205 undergoes
inspections such as an operation confirmation test and a durability
test. After these steps, the semiconductor device is completed and
shipped (step S207). For example, the pre-process and post-process
are performed in separate dedicated factories, and each of the
factories receives maintenance by a remote maintenance system.
Information for production management and apparatus maintenance is
communicated between the pre-process factory and the post-process
factory via the Internet or dedicated network.
[0144] FIG. 11 shows the detailed flow of the wafer process. In
step S211 (oxidation), the wafer surface is oxidized. In step S212
(CVD), an insulating film is formed on the wafer surface. In step
S213 (electrode formation), an electrode is formed on the wafer by
vapor deposition. In step S214 (ion implantation), ions are
implanted in the wafer. In step S215 (resist processing), a
photosensitive agent is applied to the wafer. In step S216
(exposure), the above-mentioned exposure apparatus exposes the
wafer to the circuit pattern of the mask, and prints the circuit
pattern on the wafer. In step S217 (developing), the exposed wafer
is developed. In step S218 (etching), the resist is etched except
for the developed resist image. In step S219 (resist removal), an
unnecessary resist after etching is removed. These steps are
repeated to form multiple circuit patterns on the wafer. The
exposure apparatus used in this process is optimized by the
above-described management system, which can prevent degradation
over time, or the like, caused by fixed parameters. Even if a
change over time occurs, the exposure apparatus can be widely
optimized without stopping volume production and properly
preventing a decrease in processing speed, increasing the
semiconductor device productivity in comparison with the prior
art.
[0145] In the above-described embodiments, the semiconductor
exposure apparatus is adopted as an industrial device, and the
wafer alignment parameter value is optimized. The present invention
is not limited to this. For example, the present invention may be
applied to a CMP apparatus, or the wafer focusing function of the
semiconductor exposure apparatus.
[0146] The present invention is also achieved when a storage
medium, which stores software program codes for realizing the
functions of the above-described embodiments, is supplied to a
system or apparatus, and the computer (or the CPU or MPU) of the
system or apparatus reads out and executes the program codes stored
in the storage medium.
[0147] In this case, the program codes read out from the storage
medium realize the functions of the above-described embodiments,
and the storage medium, which stores the program codes, also
constitutes the present invention.
[0148] The storage medium for supplying the program codes includes
a floppy disk, a hard disk, an optical disk, a magnetooptical disk,
a CD-ROM, a CD-R, a magnetic tape, a non-volatile memory card, and
a ROM.
[0149] The functions of the above-described embodiments are
realized when the computer executes the readout program codes.
Also, the functions of the above-described embodiments are realized
when an OS (Operating System), or the like, running on the computer
performs part of or all of the actual processing on the basis of
the instructions of the program codes.
[0150] The functions of the above-described embodiments are also
realized when the program codes read out from the storage medium
are written in the memory of a function expansion board inserted
into the computer or the memory of a function expansion unit
connected to the computer, and the CPU of the function expansion
board or function expansion unit performs part of or all of the
actual processing on the basis of the instructions of the program
codes.
[0151] As has been described above, the present invention can
optimize the parameter value of an industrial device during volume
production by the industrial device. In addition, the present
invention can achieve optimization of a parameter value during
volume production while preventing a decrease in volume production
throughput.
[0152] As many apparently widely different embodiments of the
present invention can be made without departing from the spirit and
scope thereof, it is to be understood that the invention is not
limited to the specific embodiments thereof except as defined in
the claims.
* * * * *