U.S. patent application number 11/136563 was filed with the patent office on 2006-08-24 for semiconductor device.
This patent application is currently assigned to FUJITSU LIMITED. Invention is credited to Yoshitaka Aiba, Tetsuya Fujisawa, Yoshiyuki Yoneda.
Application Number | 20060186524 11/136563 |
Document ID | / |
Family ID | 36911810 |
Filed Date | 2006-08-24 |
United States Patent
Application |
20060186524 |
Kind Code |
A1 |
Aiba; Yoshitaka ; et
al. |
August 24, 2006 |
Semiconductor device
Abstract
A semiconductor device is disclosed that includes a support
substrate, a first semiconductor element that is mounted on one
side of the support substrate, a second semiconductor element
including a high frequency electrode that is mounted on the one
side of the support substrate, a via hole that is provided at the
support substrate in relation to the high frequency electrode, and
an external connection electrode that is provided on the other side
of the support substrate in relation to the via hole.
Inventors: |
Aiba; Yoshitaka; (Kawasaki,
JP) ; Fujisawa; Tetsuya; (Kawasaki, JP) ;
Yoneda; Yoshiyuki; (Kawasaki, JP) |
Correspondence
Address: |
WESTERMAN, HATTORI, DANIELS & ADRIAN, LLP
1250 CONNECTICUT AVENUE, NW
SUITE 700
WASHINGTON
DC
20036
US
|
Assignee: |
FUJITSU LIMITED
Kawasaki
JP
|
Family ID: |
36911810 |
Appl. No.: |
11/136563 |
Filed: |
May 25, 2005 |
Current U.S.
Class: |
257/686 ;
257/698; 257/700; 257/723; 257/777; 257/778; 257/E23.069;
257/E23.114; 257/E23.174 |
Current CPC
Class: |
H01L 23/3128 20130101;
H01L 23/49827 20130101; H01L 2224/16238 20130101; H01L 23/49816
20130101; H01L 23/66 20130101; H01L 2224/48235 20130101; H01L
2924/3011 20130101; H01L 23/5384 20130101; H01L 2224/13021
20130101; H01L 24/13 20130101; H01L 2224/06131 20130101; H01L
2224/16225 20130101; H01L 2924/00014 20130101; H01L 2924/15174
20130101; H01L 24/05 20130101; H01L 2924/15311 20130101; H01L
2224/05022 20130101; H01L 2224/48091 20130101; H01L 2924/15184
20130101; H01L 2224/48227 20130101; H01L 2224/73265 20130101; H01L
2924/01019 20130101; H01L 24/48 20130101; H01L 25/18 20130101; H01L
2224/05008 20130101; H01L 2224/32225 20130101; H01L 2224/05001
20130101; H01L 2924/19105 20130101; H01L 2924/3025 20130101; H01L
2224/32145 20130101; H01L 2224/05023 20130101; H01L 24/73 20130101;
H01L 2224/16235 20130101; H01L 2224/06051 20130101; H01L 2924/181
20130101; H01L 2224/05647 20130101; H01L 2924/19042 20130101; H01L
2224/023 20130101; H01L 2924/19041 20130101; H01L 2924/30107
20130101; H01L 2224/05548 20130101; H01L 2224/0603 20130101; H01L
24/06 20130101; H01L 2224/05572 20130101; H01L 2924/01004 20130101;
H01L 23/5226 20130101; H01L 23/552 20130101; H01L 2224/0401
20130101; H01L 2224/05568 20130101; H01L 2224/73253 20130101; H01L
2224/48091 20130101; H01L 2924/00014 20130101; H01L 2924/15311
20130101; H01L 2224/73265 20130101; H01L 2224/32225 20130101; H01L
2224/48227 20130101; H01L 2924/00 20130101; H01L 2224/73265
20130101; H01L 2224/32145 20130101; H01L 2224/48227 20130101; H01L
2924/00012 20130101; H01L 2224/73265 20130101; H01L 2224/32225
20130101; H01L 2224/48227 20130101; H01L 2924/00012 20130101; H01L
2924/15311 20130101; H01L 2224/73265 20130101; H01L 2224/32225
20130101; H01L 2224/48227 20130101; H01L 2924/00012 20130101; H01L
2924/181 20130101; H01L 2924/00012 20130101; H01L 2224/05647
20130101; H01L 2924/00014 20130101; H01L 2924/00014 20130101; H01L
2224/05099 20130101; H01L 2924/00014 20130101; H01L 2224/45099
20130101; H01L 2924/00014 20130101; H01L 2224/45015 20130101; H01L
2924/207 20130101; H01L 2224/023 20130101; H01L 2924/0001
20130101 |
Class at
Publication: |
257/686 ;
257/698; 257/700; 257/723; 257/777; 257/778 |
International
Class: |
H01L 23/48 20060101
H01L023/48 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 18, 2005 |
JP |
2005-042872 |
Claims
1. A semiconductor device comprising: a support substrate; a first
semiconductor element that is mounted on one side of the support
substrate; a second semiconductor element including a high
frequency electrode that is mounted on said one side of the support
substrate; a via hole that is provided at the support substrate in
relation to the high frequency electrode; and an external
connection electrode that is provided on the other side of the
support substrate in relation to the via hole.
2. The semiconductor device as claimed in claim 1, wherein the
second semiconductor element is face-down mounted on said one side
of the support substrate.
3. The semiconductor device as claimed in claim 1, wherein a center
axis of the high frequency electrode is positioned within a
periphery of the via hole.
4. The semiconductor device as claimed in claim 1, wherein the
first semiconductor element is stacked on the second semiconductor
element.
5. The semiconductor device as claimed in claim 1, wherein the
second semiconductor element includes a shield member that is set
to ground potential.
6. The semiconductor device as claimed in claim 1, wherein the
second semiconductor element includes rewiring that forms a passive
element.
7. The semiconductor device as claimed in claim 1, wherein the
second semiconductor element includes a pair of re-wiring
structures that include portions that are parallel to each
other.
8. The semiconductor device as claimed in claim 1, wherein the
second semiconductor element includes a set of re-wiring structures
that have substantially equivalent wiring lengths.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a semiconductor device in
which a semiconductor element such as a memory element and/or a
logic element, and a high frequency semiconductor element for
handling high frequency signals are mounted on a common
substrate.
[0003] 2. Description of the Related Art
[0004] In recent years and continuing, there is a growing demand
for higher integration of semiconductor elements such as electronic
components in an electronic apparatus such as a mobile phone to
realize miniaturization and technical improvements in the
electronic apparatus.
[0005] In response to such a demand, a semiconductor device has
been developed that accommodates plural semiconductor elements with
differing functions (e.g., a memory element and/or a logic element
such as a microprocessor) within a common container or package.
Such a semiconductor device is referred to as a SiP (System in
Package).
[0006] Also, with respect to the electronic apparatus, increased
communication speed is being demanded for communicating with
external units and/or apparatuses. Accordingly, a high frequency
semiconductor element for handling high frequency signals within a
frequency band of 0.1.about.10 GHz, for example, may be provided
within the container or package as is described above.
[0007] FIG. 1 is a diagram showing a structure of a mounting
substrate accommodating a semiconductor device including
semiconductor elements corresponding to a memory element and/or a
logic element such as a microprocessor, and a semiconductor device
including a high frequency semiconductor element.
[0008] In the illustrated example, a first semiconductor device 10
including semiconductor elements 21 and 25 corresponding to a
memory element and/or a logic element, for example, and a second
semiconductor device 40 including a high frequency semiconductor
device 47 are mounted on one side of a motherboard (main electronic
circuit substrate of an electronic apparatus) 55.
[0009] The first semiconductor device 10 includes a support
substrate 11, semiconductor elements 21 and 25 that are mounted on
one side of the support substrate 11, and external connection
terminals 31 that are provided on the other side of the support
substrate 11.
[0010] The support substrate 11 corresponds to a semiconductor
element mounting substrate that includes via holes (filled with
conductive material, but hereinafter referred to as via holes) 13
that penetrate through a base material 12 of the support substrate
11, wire connecting portions 14 and 15 that are provided at the
upper ends of the via holes 13, and connection pads 16 and 17 that
are provided at the lower ends of the via holes 13.
[0011] The semiconductor element 21 is mounted on the support
substrate 11, and includes electrode pads 22 that are electrically
connected to the wire connecting portions 14 of the support
substrate 11 by wires 23.
[0012] The semiconductor element 25 is mounted on the support
substrate 11, and includes electrode pads 26 that are electrically
connected to the wire connecting portions 15 of the support
substrate 11 by wires 28. The semiconductor elements 21 and 25 are
sealed by resin 29 along with the wires 23 and 28.
[0013] The connection pads 16 and 17 are electrically connected to
pads 57 or wiring 59 that are provided on the motherboard 55 via
the external terminals 31 that are shaped into balls or bumps, for
example.
[0014] It is noted that in one example, one of the semiconductors
21 and 25 may correspond to a logic element such as a
microprocessor and the other one of the semiconductors 21 and 25
may correspond to a memory element such as a flash memory. In this
case, the relative positioning of the logic element and the memory
element (i.e., which of the semiconductor elements is placed on top
of the other) may be determined depending on conditions such as the
chip size (area) and the number of terminals required for realizing
the functions and circuit configurations of the respective
semiconductor elements.
[0015] The second semiconductor device 40 includes a support
substrate 41, a high frequency semiconductor element 47 that is
mounted on one side of the support substrate 41, and external
connection terminals 53 that are provided on the other side of the
support substrate 41.
[0016] The support substrate 41 corresponds to a semiconductor
element mounting substrate that includes via holes 43 that
penetrate through a base material 42 of the support substrate 41,
wire connecting portions 44 that are provided at the upper ends of
the via holes 43, and connection pads 45 that are provided at the
lower ends of the via holes 43.
[0017] The high frequency semiconductor element 47, corresponding
to a semiconductor element that is adapted to handle a high
frequency analog signal having a frequency above 1 GHz, for
example, is mounted on the support substrate 41, and includes
electrode pads 48 that are electrically connected to the wire
connecting portions 44 of the support substrate 41 by wires 49.
[0018] The high frequency semiconductor element 47 is sealed by
resin 51 along with the wires 49. The connection pads 45 are
connected to pads 58 or the wiring 59 provided on the motherboard
55 via external connection terminals 53 that are shaped into balls
or bumps.
[0019] The wiring 59 provided on one side of the motherboard 55
realizes electrical connection between the first semiconductor
device 10 and the second semiconductor device 40. For example,
Japanese Laid-Open Patent Publication No. 2003-110084 discloses a
technique relating to an arrangement as is described above.
[0020] In order to realize miniaturization and technical
improvements in an electronic apparatus such as a mobile phone, a
semiconductor element handling a high frequency signal is
preferably mounted on a common substrate with a logic element
and/or a memory element as is described above, rather than being
provided as a separate semiconductor device.
[0021] However, as is known to persons skilled in the art, a high
frequency semiconductor element is easily influenced by
electromagnetic fields of other wiring and semiconductor elements
located in the vicinity of the high frequency semiconductor
element.
[0022] For example, in the example of FIG. 1, if the semiconductor
elements 21 and 25 and the high frequency semiconductor element 47
are mounted on the mother board 55 as a common support substrate
(interposer) and sealed together (packaged), interference may occur
between a signal transmitted through the wiring/wire connected to
the high frequency semiconductor element 47 and a signal
transmitted through the wiring/wire connected to the semiconductor
elements 21 or 25, and desired electric characteristics may not be
obtained.
[0023] Accordingly, in the prior art, as is shown in FIG. 1, the
semiconductor elements 21 and 25 and the high frequency
semiconductor element 47 are mounted on the motherboard 55 as
separate semiconductor devices 10 and 40, respectively.
[0024] However, when more than one sealed (packaged) semiconductor
devices are mounted on one common support substrate as is described
above, the packaging density of the support substrate may decrease,
this being an obstacle to miniaturization of the electronic
apparatus.
[0025] Also, when plural semiconductor devices other than those
corresponding to the high frequency semiconductor element are
separately formed on a support substrate and attempts are made to
achieve desired electric characteristics for each of the
semiconductor devices, the support substrate design may be
complicated and the manufacturing cost of the electronic apparatus
may be raised.
[0026] Further, in the above described structure, the length of the
wiring connecting the high frequency semiconductor device to
another semiconductor device (e.g., wiring 59 of FIG. 1) may be
quite long so that a large transmission loss may be generated upon
transmitting a high frequency signal.
SUMMARY OF THE INVENTION
[0027] The present invention has been conceived in response to one
or more of the problems of the related art, and its object is to
provide a semiconductor device with increased packaging density
that is capable of preventing transmission loss of a high frequency
signal and realizing miniaturization and technical improvements in
an electronic apparatus.
[0028] In one aspect of the present invention, a first
semiconductor element and a second semiconductor element are
mounted on a common support substrate so that the packaging density
of the semiconductor device may be increased. Also, a high
frequency electrode is provided on one side of the support
substrate at a position corresponding to the position of a via
hole, and an external connection electrode is provided on the other
side of the support substrate at a position corresponding to the
position of the via hole so that the length of a signal
transmission path between the high frequency electrode and the
external connection electrode may be reduced and transmission loss
of a high frequency signal may be prevented.
[0029] In a preferred embodiment of the present invention, the
second semiconductor element is mounted face-down on the one side
of the support substrate. In one aspect of the present embodiment,
the high frequency electrode may be connected to the support
substrate.
[0030] In another preferred embodiment of the present invention, a
center axis of the high frequency electrode is positioned within a
periphery of the via hole. In one aspect of the present embodiment,
the high frequency electrode is arranged such that its center axis
is positioned within the periphery of the via hole so that high
frequency signal transmission between the high frequency electrode
and the external connection electrode may be accurately
conducted.
[0031] In another preferred embodiment of the present invention,
the first semiconductor element is stacked on the second
semiconductor element. In one aspect of the present embodiment, the
first semiconductor element is stacked on top of the second
semiconductor element so that the size of the support substrate may
be reduced and miniaturization of the semiconductor device may be
realized while preventing the transmission loss of the high
frequency signal being transmitted.
[0032] In another preferred embodiment of the present invention,
the second semiconductor element includes a shield member that is
set to ground potential. In one aspect of the present embodiment, a
shield member that is set to ground potential is provided at the
second semiconductor element so that the second semiconductor
element may be protected from being affected by noise from the
first semiconductor element.
[0033] In another preferred embodiment of the present invention,
the second semiconductor element includes rewiring that forms a
passive element. In one aspect of the present embodiment, by using
the rewiring to form a passive element, a passive element does not
have to be separately formed so that the number of components and
the mounting space required in the second semiconductor element may
be reduced. Also, impedance may be reduced so that the electric
characteristics of the second semiconductor element may be
improved.
[0034] In another preferred embodiment of the present invention,
the second semiconductor element includes a pair of re-wiring
structures that include portions that are parallel to each other.
In one aspect of the present embodiment, by providing a pair of
re-wiring structures having portions that are parallel to each
other, crosstalk in the wiring may be cancelled so that noise may
be reduced.
[0035] In another preferred embodiment of the present invention,
the second semiconductor element includes a set of re-wiring
structures that have substantially equivalent wiring lengths. In
one aspect of the present embodiment, by providing a set of
re-wiring structures having substantially equivalent wiring
lengths, adjustment and optimization of the skew timing may be
conducted.
BRIEF DESCRIPTION OF THE DRAWINGS
[0036] FIG. 1 is a cross-sectional diagram showing a structure of a
mounting substrate accommodating plural semiconductor devices
according to the prior art;
[0037] FIG. 2 is a cross-sectional diagram showing a configuration
of a semiconductor device according to a first embodiment of the
present invention;
[0038] FIG. 3 is a cross-sectional diagram showing a state in which
the semiconductor device of FIG. 2 is mounted on a mounting
substrate;
[0039] FIG. 4 is a plan view of the semiconductor device of FIG. 2
viewed from the bottom side;
[0040] FIG. 5 is a cross-sectional diagram showing a configuration
of a high frequency semiconductor element provided in the
semiconductor device of FIG. 2;
[0041] FIG. 6 is a diagram illustrating an exemplary arrangement of
rewiring provided in a semiconductor element;
[0042] FIG. 7 is a diagram illustrating a connection of a high
frequency external connection terminal of a high frequency
semiconductor element in a case where the mounting pitch for
external connection terminals of the high frequency semiconductor
element and the mounting pitch for external connection terminals of
a support substrate are equivalent;
[0043] FIG. 8 is a diagram illustrating a connection of a high
frequency external connection terminal of a high frequency
semiconductor element in a case where the mounting pitch for the
external connection terminals of the high frequency semiconductor
element is half (1/2) the mounting pitch for the external
connection terminals of the support substrate;
[0044] FIG. 9 is a diagram illustrating a connection of a high
frequency external connection terminal of a high frequency
semiconductor element in a case where the mounting pitch for the
external connection terminals of the high frequency semiconductor
element is k times (0<k<1) the mounting pitch for the
external connection terminals of the support substrate;
[0045] FIG. 10 is a cross-sectional diagram showing a configuration
of a high frequency semiconductor element that does not include a
conductor post;
[0046] FIG. 11 is a cross-sectional diagram showing a configuration
of a semiconductor device according to a second embodiment of the
present invention;
[0047] FIG. 12 is a cross-sectional diagram showing a configuration
of a semiconductor device according to a third embodiment of the
present invention;
[0048] FIG. 13 is a cross-sectional diagram showing a configuration
of a high frequency semiconductor element according to the third
embodiment;
[0049] FIG. 14 is a cross-sectional diagram showing a configuration
of a high frequency semiconductor element that does not include a
conductor post;
[0050] FIG. 15 is a cross-sectional diagram showing a configuration
of a semiconductor device according to a fourth embodiment of the
present invention;
[0051] FIG. 16 is a plan view of the semiconductor device of FIG.
15 viewed from the bottom side; and
[0052] FIG. 17 is a cross-sectional diagram showing a configuration
of a semiconductor device according to a fifth embodiment of the
present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0053] In the following, preferred embodiments of the present
invention are described with reference to the accompanying
drawings.
First Embodiment
[0054] First, referring to FIGS. 2-4, a semiconductor device 70
according to a first embodiment of the present invention is
described.
[0055] FIG. 2 is a cross-sectional diagram showing a configuration
of the semiconductor device 70 according to the first embodiment;
and FIG. 3 is a cross-sectional diagram showing a state in which
the semiconductor device 70 is mounted on a mounting substrate.
[0056] FIG. 4 is a bottom plan view of the semiconductor device 70
viewed from the direction indicated by arrow A of FIG. 2.
[0057] It is noted that in FIG. 2, a region B is shown that
corresponds to a region of an upper insulating film 76 on which a
semiconductor element 101 is mounted (referred to as `chip mounting
region B` hereinafter).
[0058] According to the present embodiment, the semiconductor
device 70 includes a support substrate 71, external connection
terminals 97 and 98, semiconductor elements 101 and 105
corresponding to a first semiconductor element, and a high
frequency semiconductor element 110 corresponding to a second
semiconductor element. The semiconductor elements 101 and 105 and
the high frequency semiconductor element 110 are mounted on a
common support substrate 71 and are integrally sealed by molded
resin 122.
[0059] The molded resin 122 is arranged to protect the
semiconductor elements 101, 105, and 110 and connection wires
thereof. In the present embodiment, the semiconductor element 101
is mounted on the support substrate 71 via a bonding layer 104
through the so-called face-up mounting method, and the
semiconductor element 105 is mounted on the semiconductor element
101 via a bonding layer 109 through face-up mounting.
[0060] The high frequency semiconductor element 110 corresponding
to the second semiconductor element is mounted on the support
substrate 71 through the so-called face-down (flip-chip) mounting
method. In this case, a high frequency external connection terminal
121 of the semiconductor element 110 is connected to a connection
pad 87 that is provided at a top end of a via hole 81 penetrating
through the support substrate 71.
[0061] It is noted that in the present embodiment, the
semiconductor element 101 is arranged to be larger in dimension
than the semiconductor element 105. The semiconductor elements 101
and 105 may correspond to a memory element or a logic element
(e.g., a microprocessor) that may be combined as is necessary or
desired. Since the chip size and the number/arrangement of external
connection terminals may vary depending on the functions and
capacity of the semiconductor elements required in each electronic
apparatus, the relative positioning of the memory element and the
logic element may be determined according to each specific
electronic apparatus (i.e., a determination as to which of a memory
element or a logic element is to be placed on top of the other is
made according to each specific electronic apparatus).
[0062] The high frequency semiconductor element 110 corresponds to
a semiconductor element handling a high frequency signal such as a
high frequency analog signal.
[0063] The support substrate 71 includes plural via holes 73 that
penetrate through a base material 72 of the support substrate 71.
On the upper surface (i.e., semiconductor mounting surface) of the
support substrate 71, upper wiring 75 that is electrically
connected to the via holes 73, an upper insulating layer 76 that
covers the upper wiring 75, and upper via holes 78 that penetrate
through the upper insulating layer 76 are provided. On the upper
insulating layer 76, wire connecting portions 83 and 84 that are
electrically connected to the upper via holes 78 are provided.
[0064] On the lower surface (i.e., external connection terminal
mounting surface) of the support substrate 71, lower wiring 88 that
is electrically connected to the via holes 73, a lower insulating
layer 89 that covers the lower wiring 88, and lower via holes 91
that penetrate through the lower insulating layer 89 are provided.
On the lower insulating layer 89, connection pads 93 that are
electrically connected to the lower via holes 91 are provided.
Also, a solder resist layer 96 is provided on the bottom surface
regions of the lower insulating layer 89 corresponding to regions
where the connection pads 93 are not provided.
[0065] Further, a via hole 81 that penetrates through the layered
structure of the upper insulating film 76, the base material 72,
and the lower insulating film 89 is provided in the present
embodiment. The via hole 81 is arranged to realize connection with
the high frequency external connection terminal 121 of the high
frequency semiconductor element 110.
[0066] According to the present embodiment, the base material 72
corresponds to an insulating sheet/plate that is made of resin or
ceramic material.
[0067] The upper wiring 75 is provided on an upper surface 72A of
the base material 72 to be connected to the via holes 73, and the
upper insulating layer 76 that is made of a resin layer is provided
to cover the upper wiring 75.
[0068] The upper via holes 78 are connected to the upper wiring 75
at one end, and are connected to the wire connecting portions 83,
84, wiring 85, or connection pads 86 at the other end.
[0069] The via hole 81 is provided at a position corresponding to
the position of the high frequency external connection terminal 121
of the high frequency semiconductor element 110.
[0070] At one side (upper side) of the support substrate 71, wire
connecting portions 83 and 84 are provided on the upper insulating
layer 76 to be electrically connected to the via holes 78. The wire
connecting portions 83 are connected to electrode pads 102 of the
semiconductor element 101 via wires 103. The wire connecting
portion 84 is connected to an electrode pad 106 of the
semiconductor element 105 via a wire 108.
[0071] The wiring 85 is provided on the upper insulating layer 76
to be electrically connected a corresponding via hole 78. An
external connection terminal 120 of the high frequency
semiconductor element 110 that is arranged to handle signals other
than a high frequency signal is connected to the wiring 85. Also,
an electrode pad 106 of the semiconductor element 105 is connected
to the wiring 85 via a wire 108 so that electrical connection
between the semiconductor element 105 and the high frequency
semiconductor element 110 may be realized.
[0072] The connection pads 86 are provided on the upper insulating
layer 76 at a portion of the element mounting surface where the
high frequency semiconductor element 110 is face-down (flip-chip)
mounted. The connection pads 86 are connected to external
connection terminals 120 of the high frequency semiconductor
element 110 that are arranged to handle signals other than a high
frequency signal are connected to the connection pads 86 at one
side. Also, the connection pads 86 are connected to the via holes
78 at the other side.
[0073] The connection pad 87 is provided on the upper insulating
layer 76 to be connected to one end 81A of the via hole 81 at one
side and be directly connected to the high frequency external
connection terminal 121 of the face-down (flip-chip) mounted high
frequency semiconductor element 110 at the other side.
[0074] At the other side (lower side) of the support substrate 71,
the lower wiring 88 that is electrically connected to the via holes
73 and a lower insulating layer 89 made of resin that covers the
lower wiring 88 are provided. The connection pads 93 provided on
the bottom surface of the lower insulating layer 89 are
electrically connected to the lower wiring 88 through lower via
holes 91.
[0075] Also, it is noted that a connection pad 95 is provided at
the bottom end of the via hole 81.
[0076] On the bottom surfaces of the connection pads 93 and 95,
external connection terminals 97 and 98 corresponding to solder
bumps are provided.
[0077] The solder resist layer 96 covering the bottom surface
regions of the lower insulating layer 89 are provided around the
connection pads 93 and 95 to prevent the external connection
terminals 97 and 98 from coming into contact with one another.
[0078] As is shown in FIG. 3, the semiconductor device 70 having
the structure as is described above is electrically connected to
electrode pads/wiring 127 that are provided on a mounting substrate
125 via the external connection terminals 97 and 98. In this way,
transmission of signals including high frequency signals may be
realized between the semiconductor elements 101, 105, the high
frequency semiconductor element 110, and the mounting substrate
125.
[0079] In the semiconductor device 70 according to the present
embodiment, the semiconductor elements 101, 105, and the high
frequency semiconductor element 110 are mounted on one common
support substrate 71, and thereby, the length of the wiring 85 may
be reduced so that the transmission loss of a high frequency signal
being transmitted between the semiconductor element 105 and the
high frequency semiconductor element 110 may be reduced.
[0080] Also, according to the present embodiment, the high
frequency external connection terminal 121 of the high frequency
semiconductor element 110 is connected to the connection pad 87,
the connection pad 95 is connected to the connection pad 87 through
the via hole 81, and the external connection terminal 98 that is
provided on the connection pad 95 is connected to the electrode
pad/wiring 127 of the mounting substrate 125. In this way, high
frequency signal transmission (transmission of signals requiring
high speed transmission) may be realized between the high frequency
semiconductor element 110 and the mounting substrate 125.
[0081] As is shown in FIG. 4, according to the present embodiment,
at the lower side of the support substrate 71 of the semiconductor
device 70, the external connection terminals 97 and 98 are arranged
into a matrix, and four external connection terminals 98 that are
adapted to handle high frequency signals are arranged at the
outermost positions of the external connection terminal arrangement
so that the external connection terminals 98 may be easily
connected to external circuits or apparatuses.
[0082] It is noted that the mounting pitch in the arrangement of
the external connection terminals 97 and 98 is set to a
predetermined value based on a standardized specification.
[0083] In the following, the structure of the high frequency
semiconductor element 110 is described with reference to FIG.
5.
[0084] FIG. 5 is a cross-sectional diagram showing a state in which
the high frequency semiconductor element 110 is face-down
(flip-chip) mounted on the support substrate 71 as is described
above.
[0085] As is shown in this drawing, the high frequency
semiconductor element 110 includes a high frequency element 111,
re-wirings 115, 116, a column-shaped electrode (conductor post)
118, molded resin 119, external connection terminals 120, and a
high frequency external connection terminal 121, for example.
[0086] The high frequency element 111 corresponds to a silicon (Si)
semiconductor element that includes function elements realizing an
electronic circuit that is adapted to handle high frequency analog
signals, for example. The high frequency element 111 includes
electrode pads 112 and 113 that are formed on one side of a silicon
substrate through a conventional wafer process, and an insulating
layer 114 covering the silicon substrate and exposing the electrode
pads 112 and 113. It is noted the function elements such as
transistors and resistors realizing the electronic circuit are not
shown in the present drawing.
[0087] The electrode pad 112 corresponds to an electrode pad that
is used for transmitting a high frequency signal. On the other
hand, the electrode pad 113 corresponds to an electrode pad that is
connected to a power line, a ground line, or wiring for handling
relatively low frequency signals, for example.
[0088] The insulating layer 114 corresponds to a so-called
passivation layer and may be made of a silicon nitride (SiN) film,
for example.
[0089] The rewiring 115 extends along the insulating layer 114 and
is connected to the electrode pad 112 at one end. At the other end,
the rewiring 115 is electrically connected to the high frequency
external connection terminal 121 via the column-shaped electrode
(conductor post) 118.
[0090] The rewiring 116 extends along the insulating layer 114 and
is connected to the electrode pad 113 at one end. At the other end,
the rewiring 116 is electrically connected to the external
connection terminal 120.
[0091] According to the present embodiment, the re-wirings 115 and
116 are made of copper (Cu), and are arranged to realize adjustment
of the mounting positions of the high frequency external connection
terminals 121 or the external connection terminals 120 and
optimization of peripheral circuit elements (impedance
matching).
[0092] FIG. 6 is a diagram showing an exemplary arrangement of
rewiring in a semiconductor element.
[0093] It is noted that the configuration of a semiconductor
element that is shown in FIG. 6 does not necessarily correspond to
the configuration of the high frequency semiconductor element 110
that is shown in FIG. 5. However, components shown in FIG. 6 that
are identical to those shown in FIG. 5 are assigned the same
references.
[0094] In the illustrated example of FIG. 6, re-wirings 124A, 124B,
and 124C have substantially the same wiring length and make up one
set of rewiring.
[0095] The re-wirings 124A, 124B, and 124C are connected to
adjacent electrode pads 113 at one side, and are electrically
connected to external connection terminals 120 via conductor posts
(not shown) at the other side. It is noted that the rewiring 124B
is arranged to extend along a circumventing path rather than taking
the shortest path so that the rewiring 124B may have substantially
the same wiring length as those of the re-wirings 124A and
124C.
[0096] By arranging adjacent electrode pads 113 to be connected to
re-wirings 124A, 124B, and 124C having substantially the same
wiring length, skew timing adjustment and optimization may be
realized.
[0097] Also, in FIG. 6, rewiring 125A and 125B make up a pair of
re-wirings including portions that are parallel with respect to
each other.
[0098] The re-wirings 125A and 125B are connected to electrode pads
113 that are connected to a differential circuit unit of the
electronic circuit at one side, and are electrically connected to
external connection terminals 120 via conductor posts (not shown)
at the other side. By arranging at least portions of a pair of
re-wirings connected to a differential circuit unit to be parallel
to each other, noise may be reduced.
[0099] Further, in FIG. 6, re-wring 126 is spirally arranged to
surround the electrode pad 112 and realizes an inductor, which
corresponds to a passive element.
[0100] The rewiring 126 is connected to the electrode pad 112 at
one side, and is electrically connected to the high frequency
external connection terminal 121 via a conductor post (not shown)
at the other side.
[0101] By realizing an inductor using the rewiring 126, a passive
element such as the inductor does not have to be separately
provided, and the number of components and the mounting area may be
reduced.
[0102] Also, by arranging the passive element to be positioned
close to the electrodes of the semiconductor element, impedance may
be reduced and the electric characteristics may be improved.
[0103] It is noted that in the high frequency semiconductor element
110 of FIG. 5, the re-wirings 115, 116 and the external connection
terminals 120, 121 are electrically and mechanically connected to
each other by column-shaped electrodes 118 that are provided on the
re-wirings 115 and 116.
[0104] By providing the column-shaped electrodes 118 on the
re-wirings 115 and 116 as is described above, the re-wirings 115
and 116 may be sealed by the molded resin 119. The molded resin 119
may be arranged to protect the re-wirings 115, 116, and the
column-shaped electrodes 118, which may be made of copper (Cu), for
example.
[0105] The external connection terminals 120 and 121 may correspond
to bumps that are made of lead-free solder, for example.
[0106] Referring back to FIGS. 2 and 3, according to the present
embodiment, when the high frequency semiconductor element 110 is
face-down (flip-chip) mounted on the support substrate 71, the high
frequency external connection terminal 121 is connected to the
connection pad 87 that is provided at one end 81A of the via hole
81 penetrating through the support substrate 71.
[0107] In this way, the high frequency external connection terminal
121 of the high frequency semiconductor element 110 may be
electrically connected to the external connection terminal 98 via
the connection pad 87, the via hole 81, and the connection pad
95.
[0108] In such an arrangement, the connection distance may be
reduced for realizing electrical connection between the high
frequency external connection terminal 121 and the external
connection terminal 98 via the via hole 81 so that transmission
loss in transmitting a high frequency signal may be reduced.
[0109] Also, since neither the high frequency external connection
terminal 121 nor the connection pad 87 are arranged to extend along
the support substrate 71, the occurrence of mutual interference
between the semiconductor element 101 and the semiconductor element
105 may be reduced.
[0110] It is noted that the mounting pitch in the arrangement of
the external connection terminals 120 and the high frequency
external connection terminals 121 is arranged to be set to a
predetermined value based on a standardized specification.
[0111] In the following, the connection between the high frequency
external connection terminal 121 and the connection pad 87 is
described with reference to FIGS. 7-9.
[0112] First, referring to FIG. 7, a connection between the high
frequency external connection terminal 121 and the connection pad
87 is described in a case where the mounting pitch P1 for the
external connection terminals 120 and 121 of the high frequency
semiconductor element 110 and the mounting pitch P2 for the
external connection terminals 97 and 98 on the support substrate 71
are equal (i.e., P1=P2).
[0113] It is noted that in FIG. 7, the center axis of the high
frequency external connection terminal 121 is represented by C
(referred to as `center axis C` hereinafter), the outer periphery
of the via hole 81 is represented by E (referred to as `periphery
E` hereinafter), the mounting pitch for the external connection
terminals 120 and 121 of the high frequency semiconductor element
110 is represented by P1 (referred to as `mounting pitch P1`
hereinafter), the mounting pitch for the external connection
terminals 97 and 98 provided at the support substrate 71 is
represented by P2 (referred to as `mounting pitch P2` hereinafter),
and the diameter of the via hole 81 is represented by R1 (referred
to as `diameter R1` hereinafter).
[0114] As is shown in FIG. 7, when P1=P2, the high frequency
external connection terminal 121 of the high frequency
semiconductor element 110 is placed at a position corresponding to
the position of the end portion 81A of the via hole 81 via the
connection pad 87 in a manner such that the center axis of the via
hole substantially coincides with the center axis of the high
frequency external connection terminal 121. The high frequency
external connection terminal 121 positioned in this manner is then
connected to the connection pad 87.
[0115] It is noted that in connecting the high frequency external
connection terminal 121 to the connection pad 87, the center axis C
of the high frequency external connection terminal 121 is
preferably arranged to be positioned at the inner side of the
periphery E of the via hole 81.
[0116] Next, referring to FIGS. 8 and 9, exemplary connections
between the high frequency external connection terminal 121 and the
connection pad 87 are described in cases where the mounting pitch
P1 for the external connection terminals 120 and 121 of the high
frequency semiconductor element 110 and the mounting pitch P2 for
the external connection terminals 97 and 98 on the support
substrate 71 are different.
[0117] FIG. 8 illustrates the connection of the high frequency
external connection terminal 121 in a case where the mounting pitch
P1 for the external connection terminals 120 and 121 of the high
frequency semiconductor element 110 is half (1/2) the mounting
pitch P2 for the external connection terminals 97 and 98 provided
on the support substrate 71. FIG. 9 illustrates the connection of
the high frequency external connection terminal 121 in a case where
the mounting pitch P1 for the external connection terminals 120 and
121 of the high frequency semiconductor element 110 is k times
(0<k<1) the pitch P2 for the external connection terminals 97
and 98 provided on the support substrate 71.
[0118] It is noted that in FIGS. 8 and 9, components that are
identical to those shown in FIG. 7 are given the same reference. In
FIG. 8, the center axis of the external connection terminal 120 is
represented by C'. In FIG. 9, the diameter of the via hole 81 is
represented by `R2` (referred to as `diameter R2` hereinafter), and
the outer periphery of the via hole 81 is represented by F
(referred to as `periphery F` hereinafter).
[0119] As is shown in FIG. 8, when P1=(P2/2), an external
connection terminal 120 is provided between two high frequency
external connection terminals 121 so that the distance between the
high frequency external connection terminals 121 may be set to
P1.times.2=P2, and the high frequency external connection terminal
121 may be arranged at a position corresponding to the position of
the end portion 81A of the via hole 81 via the connection pad
87.
[0120] It is noted that in connecting the high frequency external
connection terminal 121 to the connection pad 87, the center axis C
of the high frequency external connection terminal 121 is
preferably arranged to be positioned at the inner side of the
periphery E of the via hole 81.
[0121] As is shown in FIG. 9, when P1=k.times.P2 (0<k<1), and
the high frequency external connection terminal 121 cannot be
connected at a position corresponding to the position of the end
portion 81A of the via hole 81 when the diameter of the via hole 81
is set to R1, the diameter of the via hole 81 is widened to R2
(R2>R1) so as to enable the high frequency external connection
terminal 121 to be arranged at a position corresponding to the
position of the end portion 81A of the via hole 81. The high
frequency external connection terminal 121 positioned in this
manner is connected to the connection pad 87 that is provided on
the end portion 81A of the via hole 81.
[0122] By widening the diameter of the via hole 81 provided at the
support substrate 71, the high frequency external connection
terminal 121 may be positioned to face the end portion 81A of the
via hole 81 without having to change the mounting pitch P1 for the
external connection terminals 120 and 121 of the high frequency
semiconductor element 110.
[0123] In this way, accurate transmission of high frequency signals
between the high frequency external connection terminal 121 and the
external connection terminal 98 may be realized without inducing
degradation of the high frequency characteristics of the high
frequency semiconductor element 110.
[0124] It is noted that in connecting the high frequency external
connection terminal 121 to the connection pad 87, the center axis C
of the high frequency external connection terminal 121 is
preferably arranged to be positioned at the inner side of the
periphery F of the via hole 81.
[0125] By connecting the high frequency external connection
terminal 121 to the connection pad 87 in a manner such that the
center axis C of the high frequency external connection terminal
121 is positioned at the inner side of the periphery E/F of the via
hole 81 as is described above, transmission loss of a high
frequency signal being transmitted between the high frequency
external connection terminal 121 and the external connection
terminal 98 may be reduced.
[0126] FIG. 10 is a diagram showing a configuration of a high
frequency semiconductor element 130 that does not include a
column-shaped electrode (conductor post). It is noted that in this
drawing, components that are identical to those shown in FIG. 5 are
given the same references.
[0127] In the high frequency semiconductor element 130 of FIG. 10,
the external connection terminals 120 and 121 are directly provided
on the re-wirings 115 and 116 rather than providing the
column-shaped electrode (conductor post). In the present example,
resin 131 that is made of organic insulating resin, for example, is
provided to cover the insulating layer 114.
[0128] As is described above, according to an embodiment, a
semiconductor element that does not include a column-shaped
electrode may be used as a high frequency semiconductor
element.
[0129] It is noted that rewiring configurations such as the
re-wirings 124A, 124B, 124C, 125A, 125B, and 126 shown in FIG. 6
may be provided in the high frequency semiconductor element 130 as
is necessary or desired.
[0130] In the following, process steps for manufacturing the
semiconductor device 70 are described.
[0131] First, suitable types of semiconductor elements are selected
as the semiconductor elements 101, 105 and the high frequency
semiconductor element 110 according to the functions required by
the electronic apparatus employing the semiconductor device 70. For
example, suitable semiconductor elements may be selected from a
memory element and/or a logic element such as a microprocessor as
the semiconductor elements 101 and 105, and a semiconductor element
having a function for processing analog signals may be selected as
the high frequency semiconductor element 110.
[0132] Also, the support substrate 71 is formed according to the
structure of the electronic apparatus as well as the terminal
structure/arrangement of the semiconductor elements. It is noted
that at this point, the via hole 81 is formed on the support
substrate 71 at a position corresponding to the mounting position
of the high frequency external connection terminal 121 of the high
frequency semiconductor element 110.
[0133] Then, on one side (upper surface) of the support substrate
71, the semiconductor elements 101, 105, and the high frequency
semiconductor element 110 are mounted.
[0134] The semiconductor element 101 is bonded onto the support
substrate 71 via the bonding layer 104 through face-up mounting,
and the semiconductor element 105 is bonded onto the semiconductor
element 101 via the bonding layer 109 through face-up mounting.
[0135] The high frequency semiconductor element 110 is mounted on
the support substrate 71 through face-down (flip-chip) mounting. At
this point, the high frequency external connection terminal 121 is
arranged at a position corresponding to the position of the via
hole 81, and is connected to the corresponding connection pad
87.
[0136] The electrode pads of the semiconductor elements 101 and 105
are electrically connected to electrode pads provided on the upper
surface of the support substrate 71 via corresponding wires 103 and
108.
[0137] Then, the semiconductor elements 101, 105, and the high
frequency semiconductor element 110 are sealed by the molded resin
122 along with the wires 103 and 108.
[0138] Then, the external connection terminals 97 and 98 are
provided at the connection pads 93 formed on the other side (lower
surface) of the support substrate 71.
[0139] By manufacturing the semiconductor device 70 according to
the manufacturing method as is described above, high density
packaging of the semiconductor elements on the support substrate
may be facilitated compared to the conventional method, and
optimization of the high frequency semiconductor element 110 may be
facilitated in view of the time required for designing and
manufacturing the semiconductor device as well as manufacturing
costs.
[0140] Also, transmission loss of a high frequency signal being
transmitted between the high frequency external connection terminal
121 and the external connection terminal 98 may be reduced.
Second Embodiment
[0141] In the following, a semiconductor device 135 according to a
second embodiment of the present invention is described with
reference to FIG. 11. It is noted that the semiconductor device 135
according to the present embodiment is characterized by
implementing a shield member covering the high frequency
semiconductor element.
[0142] In FIG. 11, components of the semiconductor device 135 that
are identical to those of the semiconductor device 70 of the first
embodiment are assigned the same references.
[0143] As is shown in FIG. 11, the semiconductor device 135
includes a support substrate 71, external connection terminals 97,
98, semiconductor elements 101, 105, a high frequency semiconductor
element 110, and a shield member 136 covering the high frequency
semiconductor element 110.
[0144] The semiconductor elements 101, 105, and the shield member
136 covering the high frequency semiconductor element 110 are
covered by molded resin 122 along with wires 103 and 108.
[0145] In this example, the shield member 136 covering the high
frequency semiconductor element 110 is electrically connected to a
ground terminal (not shown) that is provided on the support
substrate 71.
[0146] It is noted that aluminum (Al) or nickel brass
(copper[Cu]-nickel[Ni]-zinc[Zn] alloy) may be used as the material
of the shield member 136, for example.
[0147] By providing the shield member 136 covering the high
frequency semiconductor element 110, mutual interference between
the semiconductor elements 101, 105 and the high frequency
semiconductor element 110 may be reduced or prevented.
Third Embodiment
[0148] In the following, a semiconductor device 140 according to a
third embodiment of the present invention is described with
reference to FIGS. 12 and 13.
[0149] FIG. 12 is a cross-sectional diagram showing a configuration
of the semiconductor device 140 according to the present
embodiment. FIG. 13 is an enlarged cross-sectional diagram showing
a configuration of a high frequency semiconductor element 145 of
the semiconductor device 140 of FIG. 12. It is noted that the
semiconductor device 140 according to the present embodiment is
characterized in that it includes a capacitor element that is
mounted on a rewiring formation surface of the high frequency
semiconductor element 145.
[0150] It is noted that in FIGS. 12 and 13, components that are
identical to those of the semiconductor device according to the
first and second embodiment are assigned the same references.
[0151] Referring to FIG. 12, the semiconductor device 140 according
to the present embodiment includes a support substrate 71, external
connection terminals 97, 98, semiconductor elements 101, 105, a
high frequency semiconductor element 145, and molded resin 122 that
is provided on one side of the support substrate 71 to cover the
semiconductor elements 101, 105, and the high frequency
semiconductor element 145.
[0152] Referring to FIG. 13, the high frequency semiconductor
element 145 includes a high frequency element 111 with an
insulating layer 114 formed on one side, re-wirings 115 and 116
that are provided on the insulating layer 114, column-shaped
electrodes (conductor posts) 151-153 that are provided on the
re-wirings 115, 116, and external connection terminals 120, 121
that are provided at tip portions of the column-shaped electrodes
151-153. Also, the high frequency semiconductor element 145
includes a capacitor element 146 that includes a dielectric layer
147 formed on the rewiring 116, and a rewiring layer 148 formed on
the dielectric layer 147.
[0153] The re-wirings 115, 116, the capacitor element 146, and the
column-shaped electrodes 151-153 are covered by molded resin
119.
[0154] It is noted that the re-wirings 115 and 116 may include the
re-wirings 124A, 124B, 124C, 125A, 125B, and/or 126 described in
FIG. 6 as is necessary or desired.
[0155] By providing a capacitor element 146 on the high frequency
semiconductor element 145, for example, the rewiring 126 realizing
an inductor and the capacitor element 146 may be combined to form a
filter with relative ease so that high frequency characteristics of
the high frequency semiconductor element 145 may be improved.
[0156] It is noted that the column-shaped electrode (conductor
post) 151 is connected to the rewiring 115 of the high frequency
element 111 at one end while its other end 151A is exposed from the
molded resin 119, and the external connection terminal 121 is
provided at this end portion 151A.
[0157] The column-shaped electrode 152 is connected to the rewiring
116 at one end while its other end 152A is exposed from the molded
resin 119, and the external connection terminal 120 is provided at
this end portion 152A.
[0158] The column-shaped electrode 153 is connected to the rewiring
148 at one end while its other end 153A is exposed from the molded
resin 119, and the external connection terminal 120 is provided at
this end portion 153A. It is noted that the end portions 151A-153A
of the column-shaped electrodes 151-153 are arranged to be
positioned on substantially the same plane.
[0159] By providing the column-shaped electrodes 151-153 on the
re-wirings 115, 116, and 148, the rewiring 115 and the capacitor
element 146 may be sealed by the molded resin 119 that may be
molded through compression molding, for example. It is noted that
the column-shaped electrodes 151-153 may be made of copper (Cu),
for example.
[0160] FIG. 14 is a diagram showing a configuration of a high
frequency semiconductor element 155 corresponding to a modified
example of the high frequency semiconductor element 145 of FIG.
13.
[0161] It is noted that the high frequency semiconductor element
155 according to the present example does not include a
column-shaped electrode (conductor post). In FIG. 14, components
that are identical to those shown in FIG. 13 are assigned the same
references.
[0162] The high frequency semiconductor element 155 of FIG. 14
includes a semiconductor element 111 with an insulating layer 114
formed on one side, re-wirings 115 and 116 provided on the
insulating layer 114, via holes 156 provided on the re-wirings 115
and 116, and external connection terminals provided at one side of
the via holes 156.
[0163] Also, the high frequency semiconductor element 155 includes
a capacitor element 146 that is realized by a dielectric layer 147
provided on the re-wirings 115 and 116, and a rewiring layer 148
provided on the dielectric layer 147. In the present example, the
external connection terminal 120 is directly provided on the
rewiring layer 148 realizing one electrode of the capacitor element
146.
[0164] The re-wirings 115, 116, the capacitor element 146, and the
via hole 156 are covered by molded resin 157, and an insulating
layer 158 such as a solder resist layer is provided on a surface of
the molded resin 157 to protect surface portions of the rewiring
148.
[0165] It is noted that the re-wirings 115 and 116 may include the
re-wirings 124A, 124B, 124C, 125A, 125B, and/or 126 of FIG. 6 as is
necessary or desired.
[0166] According to an embodiment, the high frequency semiconductor
element 155 as is described above may be used in the semiconductor
device 140 in place of the high frequency semiconductor element 145
to realize one or more effects and advantages of the present
invention.
Fourth Embodiment
[0167] In the following, a semiconductor device 160 according to a
fourth embodiment of the present invention is described with
reference to FIGS. 15 and 16.
[0168] FIG. 15 is a cross-sectional diagram showing a configuration
of the semiconductor device 160 according to the present
embodiment. FIG. 16 is a plan view of a support substrate 71 of the
semiconductor device 160 viewed from the bottom side (from the
direction indicated by arrow G in FIG. 15).
[0169] The semiconductor device 160 according to the present
embodiment is characterized in that plural semiconductor elements
including a high frequency semiconductor element are arranged into
a layered (stacked) structure to be mounted on one side of the
support substrate 71.
[0170] It is noted that in FIGS. 15 and 16, components that are
identical to those of the semiconductor devices of the previously
described embodiments are assigned the same references.
[0171] In the present example, the support substrate 71 of the
semiconductor device 160 includes a base material 72, and plural
via holes 73 that penetrate through the base material 72. On one
side (upper surface) of the base material 72 corresponding to the
semiconductor element mounting surface, upper wiring 75 that is
electrically connected to the via holes 73, an upper insulating
layer 76 that covers the upper wiring 75, and upper via holes 78
that penetrate through the upper insulating layer 76 are provided.
Further, wire connecting portions 83, 84, and wirings 85, 86 that
are electrically connected to the via holes 78 are provided on the
upper insulating layer 76.
[0172] On the other side (lower surface) of the base material 72
corresponding to the external connection terminal mounting surface,
lower wiring 88 that is electrically connected to the via holes 73,
a lower insulating layer 89 covering the lower wiring 88, lower via
holes 91 penetrating through the lower insulating layer 89, and
connection pads that are electrically connected to the lower via
holes 91 are provided. Also, a solder resist layer 96 that is
arranged to surround the connection pads 93 is provided on the
lower insulating layer 89.
[0173] Also, a via hole 81 penetrating through a layered structure
including the base material 72, the upper insulating layer 76, and
the lower insulating layer 89 is provided at a position
corresponding to the mounting position of a high frequency
semiconductor element 110.
[0174] According to the present embodiment, the high frequency
semiconductor element 110 is face-down mounted on one side (upper
surface) of the support substrate 71 around a center portion
thereof, and the external connection terminals 120 and 121 are
directly connected to the wiring 85 and connection pads 87.
[0175] Also, a semiconductor element 101 is mounted on the upper
surface of the high frequency semiconductor element 110 via a
bonding layer 104, and a semiconductor element 105 is mounted on
the upper surface of the semiconductor element 101 via a bonding
layer 109. In this way, plural semiconductor elements 110, 101, and
105 are arranged into a layered (stacked) structure to be mounted
on the support substrate 71.
[0176] It is noted that by arranging the center axis of a high
frequency external connection terminal 121 to be positioned within
the diameter (periphery) of the via hole 81 or the area occupied by
the via hole 81 upon connecting the high frequency external
connection terminal to a corresponding connection pad 87, the
length of the transmission path for transmitting a high frequency
signal may be reduced, and transmission loss of the high frequency
signal being transmitted between the high frequency external
connection terminal 121 and an external connection terminal 98 may
be reduced.
[0177] Also, in the present example, electrode pads 102 of the
semiconductor element 101 are electrically connected to the wire
connecting portions 83 and the wiring 85 that are provided on the
support substrate via wires 103. Electrode pads 106 of the
semiconductor element 105 are electrically connected to the wire
connecting portions 84 provided on the support substrate 71 via
wires 108.
[0178] It is noted that the wire connection portions 83 and the
wiring 85 are positioned inward with respect to the wire connecting
portions 84 in order to facilitate wire connection of the
semiconductor elements 101 and 105.
[0179] The semiconductor elements 101, 105, and the high frequency
semiconductor element 110 provided on one side of the support
substrate 71 are sealed by molded resin 122 along with the wires
103 and 108.
[0180] By stacking the semiconductor elements 101 and 105 onto the
high frequency semiconductor element 110, and mounting the stacked
semiconductor elements onto the support substrate 71, dimensions of
the support substrate 71 may be reduced so that miniaturization of
the semiconductor device 160 may be realized.
[0181] It is noted that in one embodiment, the high frequency
semiconductor element 130 of FIG. 10 may be used instead of the
high frequency semiconductor element 110 in the semiconductor
device 160.
[0182] Also, it is noted that the high frequency semiconductor
element 145 or 155 including a capacitor element 146 may be used in
the semiconductor device 160 as is necessary or desired. By using
the high frequency semiconductor element 145 or 155 including a
capacitor element 146, for example, an inductor that is realized by
the rewiring 126 and the capacitor element 146 may be combined to
realize a filter with relative ease so that high frequency
characteristics of the semiconductor device 160 may be
improved.
Fifth Embodiment
[0183] In the following, a semiconductor device 165 according to a
fifth embodiment of the present invention is described with
reference to FIG. 17.
[0184] The semiconductor device 165 according to the present
embodiment is characterized by including a shield member 166 that
covers a high frequency element 111 of a high frequency
semiconductor element 110. It is noted that in FIG. 17, components
that are identical to those shown in FIG. 15 are assigned the same
references.
[0185] In the semiconductor device 165 according to the present
embodiment, the high frequency element 111, which is face-down
(flip-chip) mounted and electrically connected to wirings 85, 86,
and connection pads 87 via electrodes 120 and 121, is covered by
the shield member 166, and the semiconductor element 101 is mounted
on the shield member 166.
[0186] According to the present embodiment, the shield member 166
covers the high frequency element 111, and is electrically
connected to a ground terminal (not shown) provided at the support
substrate 71. It is noted that aluminum (Al) or nickel brass (i.e.,
copper [Cu]-nickel [Ni]-zinc [Zn] alloy) may be used as the
material of the shield member 166, for example, as in the second
embodiment of the present invention.
[0187] By providing the shield member 166 covering the high
frequency element 111, mutual interference between the
semiconductor elements 101, 105 and the high frequency element 111
may be reduced or prevented.
[0188] It is noted that the present invention is not limited to the
specific embodiments described above, and variations and
modifications may be made without departing from the scope of the
present invention.
[0189] For example, in the embodiments described above, the via
hole that is provide for the high frequency electrode (high
frequency external connection terminal) of the high frequency
semiconductor element is arranged into one via hole that extends
from one side of the support substrate to the other side of the
support substrate. However, the present invention is not limited to
such an arrangement, and other embodiments are possible in which
the via hole for the high frequency electrode is divided into
sections in lengthwise directions, that is, in the depth directions
of the support substrate, and electrical connection is realized via
a wiring layer or an electrode pad provided between the divided
sections, for example. In this case, positional deviation may occur
in perpendicular directions with respect to the lengthwise
directions of the via hole. Herein, influence on transmission of a
high frequency signal may decrease in proportion to a decrease in
the positional deviation between the via hole sections (i.e., when
the area of the mutually matching portions of the via holes is
increased).
[0190] The present application is based on and claims the benefit
of the earlier filing date of Japanese Patent Application No.
2005-042872 filed on Feb. 18, 2005, the entire contents of which
are hereby incorporated by reference.
* * * * *