U.S. patent application number 11/295240 was filed with the patent office on 2006-07-06 for substrate processing apparatus and substrate processing method.
This patent application is currently assigned to Dainippon Screen Mfg. Co., Ltd.. Invention is credited to Toru Asano, Masashi Kanaoka, Koji Kaneyama, Tsuyoshi Mitsuhashi, Tadashi Miyagi, Tsuyoshi Okumura, Kazuhito Shigemori, Takashi Taguchi, Yukio Toriyama, Shuichi Yasuda.
Application Number | 20060147202 11/295240 |
Document ID | / |
Family ID | 36640546 |
Filed Date | 2006-07-06 |
United States Patent
Application |
20060147202 |
Kind Code |
A1 |
Yasuda; Shuichi ; et
al. |
July 6, 2006 |
Substrate processing apparatus and substrate processing method
Abstract
A substrate processing apparatus comprises an indexer block, an
anti-reflection film processing block, a resist film processing
block, a washing/development processing block, and an interface
block. An exposure device is arranged adjacent to the interface
block. A resist film is formed on a substrate by the resist film
processing block. The substrate is washed and dried by the washing
processing unit in the washing/development processing block before
the substrate is subjected to the exposure processing by the
exposure device.
Inventors: |
Yasuda; Shuichi; (Kyoto,
JP) ; Kanaoka; Masashi; (Kyoto, JP) ;
Kaneyama; Koji; (Kyoto, JP) ; Miyagi; Tadashi;
(Kyoto, JP) ; Shigemori; Kazuhito; (Kyoto, JP)
; Asano; Toru; (Kyoto, JP) ; Toriyama; Yukio;
(Kyoto, JP) ; Taguchi; Takashi; (Kyoto, JP)
; Mitsuhashi; Tsuyoshi; (Kyoto, JP) ; Okumura;
Tsuyoshi; (Kyoto, JP) |
Correspondence
Address: |
OSTROLENK FABER GERB & SOFFEN
1180 AVENUE OF THE AMERICAS
NEW YORK
NY
100368403
US
|
Assignee: |
Dainippon Screen Mfg. Co.,
Ltd.
|
Family ID: |
36640546 |
Appl. No.: |
11/295240 |
Filed: |
December 6, 2005 |
Current U.S.
Class: |
396/611 |
Current CPC
Class: |
G03F 7/70991 20130101;
G03F 7/70341 20130101 |
Class at
Publication: |
396/611 |
International
Class: |
G03D 5/00 20060101
G03D005/00 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 6, 2004 |
JP |
2004-353119 |
Mar 29, 2005 |
JP |
2005-095782 |
Sep 14, 2005 |
JP |
2005-267330 |
Claims
1. A substrate processing apparatus that is arranged adjacent to an
exposure device, comprising: a processing section for applying
processing to a substrate; and an interface that is provided on one
end of said processing section for exchanging the substrate between
said processing section and said exposure device, wherein said
processing unit includes: a first processing unit that forms a
photosensitive film made of a photosensitive material on the
substrate; a second processing unit that washes the substrate after
the formation of said photosensitive film by said first processing
unit and before the exposure processing by said exposure device;
and a third processing unit that applies development processing to
the substrate after the exposure processing by said exposure
device.
2. The substrate processing apparatus according to claim 1, wherein
said processing section comprises: a first processing block that
includes said first processing unit, a first thermal processing
unit that thermally treats the substrate, and a first transport
unit that transports the substrate; and a second processing block
that includes said second processing unit, said third processing
unit, a second thermal processing unit that thermally treats the
substrate, and a second transport unit that transports the
substrate.
3. The substrate processing apparatus according to claim 2, wherein
said second processing block is arranged adjacent to an exposure
device
4. The substrate processing apparatus according to claim 2, wherein
said processing section further comprises a third processing block
that includes a fourth processing unit that forms an
anti-reflection film on the substrate before the formation of said
photosensitive film by said first processing unit, a third thermal
processing unit that thermally treats the substrate, and a third
transport unit that transports the substrate.
5. The substrate processing apparatus according to claim 4, further
comprising an indexer that is arranged adjacent to another end of
said processing section and carries in the substrate to said
processing section and carries out the substrate from said
processing section, wherein said third processing block is arranged
adjacent to said indexer.
6. The substrate processing apparatus according to claim 1, wherein
said interface further includes: a fifth processing unit that
applies given processing to the substrate; a platform on which the
substrate is temporarily mounted; a fourth transport unit that
transports the substrate between said processing section, said
fifth processing unit, and said platform; and a fifth transport
unit that transports the substrate between said platform and said
exposure device.
7. The substrate processing apparatus according to claim 6, wherein
said fourth transport unit includes first and second holders for
holding the substrate, said fourth transport unit holds the
substrate with said first holder during the transport of the
substrate before the exposure processing by said exposure device,
and holds the substrate with said second holder during the
transport of the substrate after the exposure processing by said
exposure device, said fifth transport unit includes third and
fourth holders for holding the substrate, and said fifth transport
unit holds the substrate with said third holder during the
transport of the substrate before the exposure processing by said
exposure device, and holds the substrate with said fourth holder
during the transport of the substrate after the exposure processing
by said exposure device.
8. The substrate processing apparatus according to claim 7, wherein
said second holder is provided below said first holder, and said
fourth holder is provided below said third holder.
9. The substrate processing apparatus according to claim 6, wherein
said fifth processing unit includes an edge exposure unit that
subjects a peripheral portion of the substrate to exposure.
10. The substrate processing apparatus according to claim 1,
wherein said second processing unit further dries the substrate
after washing the substrate.
11. The substrate processing apparatus according to claim 10,
wherein said second processing unit comprises: a substrate holding
device that holds the substrate substantially horizontally; a
rotation-driving device that rotates the substrate held on said
substrate holding device about an axis vertical to the substrate; a
washing liquid supplier that supplies a washing liquid onto the
substrate held on said substrate holding device; and an inert gas
supplier that supplies an inert gas onto the substrate after the
washing liquid has been supplied onto the substrate by said washing
liquid supplier.
12. The substrate processing apparatus according to claim 11,
wherein said inert gas supplier supplies the inert gas so that the
washing liquid supplied onto the substrate from said washing liquid
supplier is removed from the substrate as the washing liquid moves
outwardly from the center of the substrate.
13. The substrate processing apparatus according to claim 11,
wherein said second processing unit further comprises a rinse
liquid supplier that supplies a rinse liquid onto the substrate
after the supply of the washing liquid from said washing liquid
supplier and before the supply of the inert gas from said inert gas
supplier.
14. The substrate processing apparatus according to claim 13,
wherein said inert gas supplier supplies the inert gas so that the
rinse liquid supplied onto the substrate from said rinse liquid
supplier is removed from the substrate as the rinse liquid moves
outwardly from the center of the substrate.
15. The substrate processing apparatus according to claim 1,
wherein said second processing unit washes the substrate by
supplying a fluid mixture containing a washing liquid and a gas
onto the substrate from a fluid nozzle.
16. The substrate processing apparatus according to claim 15,
wherein said gas is an inert gas.
17. The substrate processing apparatus according to claim 15,
wherein said second processing unit further dries the substrate
after washing the substrate.
18. The substrate processing apparatus according to claim 17,
wherein said second processing unit includes an inert gas supplier
that dries the substrate by supplying an inert gas onto the
substrate.
19. The substrate processing apparatus according to claim 18,
wherein said fluid nozzle functions as said inert gas supplier.
20. The substrate processing apparatus according to claim 18,
wherein said second processing unit further includes: a substrate
holding device that holds the substrate substantially horizontally;
and a rotation-driving device that rotates the substrate held on
said substrate holding device about an axis vertical to the
substrate.
21. The substrate processing apparatus according to claim 18,
wherein said second processing unit supplies the inert gas so that
the fluid mixture supplied onto the substrate from said fluid
nozzle is removed from the substrate as the fluid mixture moves
outwardly from the center of the substrate.
22. The substrate processing apparatus according to claim 18,
wherein said second processing unit further includes a rinse liquid
supplier that supplies a rinse liquid onto the substrate, after the
supply of the fluid mixture from said fluid nozzle and before the
supply of the inert gas from said inert gas supplier.
23. The substrate processing apparatus according to claim 22,
wherein said fluid nozzle functions as said rinse liquid
supplier.
24. The substrate processing apparatus according to claim 22,
wherein said second processing unit supplies the inert gas so that
the rinse liquid supplied onto the substrate from said rinse liquid
supplier is removed from the substrate as the rinse liquid moves
outwardly from the center of the substrate.
25. The substrate processing apparatus according to claim 15,
wherein said fluid nozzle has a liquid flow passage through which a
liquid flows, a gas flow passage through which a gas flows, a
liquid discharge port having an opening that communicates with said
liquid flow passage, and a gas discharge port that is provided near
said liquid discharge port and has an opening that communicates
with said gas flow passage.
26. A substrate processing method for processing a substrate in a
substrate processing apparatus that is arranged adjacent to an
exposure device and comprises a first processing unit, a second
processing unit, and a third processing unit, comprising the steps
of: forming a photosensitive film made of a photosensitive material
on the substrate by said first processing unit before the exposure
processing by said exposure device; washing the substrate after the
formation of said photosensitive film by said first processing unit
and before the exposure processing by said exposure device; and
applying development processing to the substrate by said third
processing unit after the exposure processing by said exposure
device.
27. The substrate processing method according to claim 26, further
comprising the step of drying the substrate by said second
processing unit, after said step of washing the substrate by said
second processing unit and before said step of exposure processing
by said exposure device.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to substrate processing
apparatuses and substrate processing methods for applying
processing to substrates.
[0003] 2. Description of the Background Art
[0004] A substrate processing apparatus is used to apply a variety
of processing to substrates such as semiconductor substrates,
substrates for use in liquid crystal displays, plasma displays,
optical disks, magnetic disks, magneto-optical disks, photomasks,
and other substrates.
[0005] Such a substrate processing apparatus typically applies a
plurality of successive processing to a single substrate. The
substrate processing apparatus as described in JP 2003-324139 A
comprises an indexer block, an anti-reflection film processing
block, a resist film processing block, a development processing
block, and an interface block. An exposure device is arranged
adjacent to the interface block as an external device separate from
the substrate processing apparatus.
[0006] In the above-described substrate processing apparatus, a
substrate is carried from the indexer block into the
anti-reflection film processing block and the resist film
processing block, where the formation of an anti-reflection film
and resist film coating processing are applied to the substrate.
The substrate is then carried to the exposure device through the
interface block. After exposure processing has been applied to the
resist film on the substrate by the exposure device, the substrate
is transported to the development processing block through the
interface block. In the development processing block, development
processing is applied to the resist film on the substrate to form a
resist pattern thereon, and the substrate is subsequently carried
into the indexer block.
[0007] With recent improvements in the density and integration of
devices, making finer resist patterns have become very important.
Conventional exposure devices typically perform exposure processing
by providing reduction projection of a reticle pattern on a
substrate through a projection lens. With such conventional
exposure devices, however, the line width of an exposure pattern is
determined by the wavelength of the light source of an exposure
device, thus making it impossible to make a resist pattern finer
than that.
[0008] For this reason, a liquid immersion method is suggested as a
projection exposure method allowing for finer exposure patterns
(refer to, e.g., WO99/49504 pamphlet). In the projection exposure
device according to the WO99/49504 pamphlet, a liquid is filled
between a projection optical system and a substrate, resulting in a
shorter wavelength of exposure light on a surface of the substrate.
This allows for a finer exposure pattern.
[0009] However, in the projection exposure device according to the
aforementioned WO99/49504 pamphlet, exposure processing is
performed with the substrate and the liquid being in contact with
each other. Accordingly, part of the component of a resist applied
on the substrate is eluted in the liquid. The resist component
eluted in the liquid remains on a surface of the substrate, which
may become the cause of a defect.
[0010] The resist component eluted in the liquid contaminates the
lens of the exposure device. This may cause a defective dimension
and a defective shape of the exposure pattern.
SUMMARY OF THE INVENTION
[0011] It is an object of the invention to provide a substrate
processing apparatus and a substrate processing method capable of
preventing a component of a photosensitive material on a substrate
from being eluted in a liquid in an exposure device.
[0012] (1)
[0013] A substrate processing apparatus according to one aspect of
the present invention that is arranged adjacent to an exposure
device comprises a processing section for applying processing to a
substrate, and an interface that is provided on one end of the
processing section for exchanging the substrate between the
processing section and the exposure device, wherein the processing
section includes a first processing unit that forms a
photosensitive film made of a photosensitive material on the
substrate, a second processing unit that washes the substrate after
the formation of the photosensitive film by the first processing
unit and before the exposure processing by the exposure device, and
a third processing unit that applies development processing to the
substrate after the exposure processing by the exposure device.
[0014] In the substrate processing apparatus, the photosensitive
film made of a photo sensitive material is formed on the substrate
by the first processing unit. Then, the substrate is subjected to
washing processing by the second processing unit. After this, the
substrate is transported to the exposure device from the processing
section through the interface, where the substrate is subjected to
exposure processing. The substrate after the exposure processing is
transported to the processing section from the exposure device
through the interface, and the substrate is subjected to the
development processing in the third processing unit.
[0015] In this way, the substrate is subjected to washing
processing by the second processing unit before the exposure
processing by the exposure device. Part of the component of the
photosensitive film formed on the substrate by the first processing
unit is thus eluted, and washed away. In this case, even if the
substrate in contact with a liquid is subjected to the exposure
processing by the exposure device, the component of the
photosensitive material on the substrate is hardly eluted. This
reduces contamination in the exposure device while preventing the
component of the photosensitive material from remaining on a
surface of the substrate. As a result, processing defects of the
substrate that may be generated in the exposure device are
reduced.
[0016] (2)
[0017] The processing section may comprise a first processing block
that includes the first processing unit, a first thermal processing
unit that thermally treats the substrate, and a first transport
unit that transports the substrate; and a second processing block
that includes the second processing unit, the third processing
unit, a second thermal processing unit that thermally treats the
substrate, and a second transport unit that transports the
substrate.
[0018] In this case, the photosensitive film is formed on the
substrate by the first processing unit in the first processing
block. Then, the substrate is transported to the first thermal
processing unit by the first transport unit, where the substrate is
subjected to given thermal treatment. The substrate is subsequently
transported to an adjacent other processing block by the first
transport unit.
[0019] Next, in the second processing block, the substrate is
subjected to washing processing by the second processing unit.
Then, the substrate is transported to the exposure device from the
processing section through the interface, where the substrate is
subjected to exposure processing. The substrate after the exposure
processing is transported to the processing section from the
exposure device through the interface.
[0020] Then, in the second processing block, the substrate is
subjected to development processing in the third processing unit.
After this, the substrate is transported to the second thermal
processing unit by the second transport unit, where the substrate
is subjected to given thermal treatment. The substrate is
subsequently transported to an adjacent other processing block by
the second transport unit.
[0021] In the substrate processing apparatus, in the second
processing block, the substrate before the exposure processing is
subjected to washing processing and the substrate after the
exposure processing is subjected to development processing. That
is, in an existing substrate processing apparatus having the first
and third processing units, the addition of the second processing
unit to a processing block that includes the third processing unit
makes it possible to apply washing processing to the substrate
before the exposure processing and to apply development processing
to the substrate after the exposure processing by a single
processing block. As a result, processing defects of the substrate
that may be generated in the exposure device can be reduced at low
cost without increasing the footprint of the substrate processing
apparatus.
[0022] (3)
[0023] The second processing block may be arranged adjacent to an
exposure device.
[0024] In this case, the washing processing can be applied to the
substrate immediately before the exposure processing, and the
development processing can be applied to the substrate immediately
after the exposure processing. This prevents the attachment of
particles and the like in the atmosphere to the substrate during
the transport of the substrate from the second processing block to
the exposure device and from the exposure device to the second
processing block. As a result, processing defects of the substrate
that may be generated during the exposure processing and the
development processing can be reduced.
[0025] (4)
[0026] The processing section may further comprise a third
processing block that includes a fourth processing unit that forms
an anti-reflection film on the substrate before the formation of
the photosensitive film by the first processing unit, a third
thermal processing unit that thermally treats the substrate, and a
third transport unit that transports the substrate.
[0027] In this case, since the fourth processing unit forms the
anti-reflection film on the substrate, potential standing waves and
halation generated during the exposure processing can be reduced.
As a result, processing defects of the substrate that may be
generated during the exposure processing can be reduced more.
[0028] (5)
[0029] The substrate processing apparatus may further comprise an
indexer that is arranged adjacent to another end of the processing
section and carries in the substrate to the processing section and
carries out the substrate from said processing section, wherein the
third processing block may be arranged adjacent to the indexer.
[0030] In this case, an anti-reflection film is formed in the third
processing block immediately after the transporting of the
substrate to the processing section, and then a photosensitive film
can be formed in the first processing block subsequently. This
enables the smooth formation of the anti-reflection film and the
photosensitive film on the substrate.
[0031] (6)
[0032] The interface may further include a fifth processing unit
that applies given processing to the substrate; a platform on which
the substrate is temporarily mounted; a fourth transport unit that
transports the substrate between the processing section, the fifth
processing unit, and the platform; and a fifth transport unit that
transports the substrate between the platform and the exposure
device.
[0033] In this case, the substrate is transported to the fifth
processing unit from the processing section by the fourth transport
unit. The substrate is subjected to the given processing by the
fifth processing unit, and then transported to the platform by the
fourth transport unit. After this, the substrate is transported to
the exposure device from the platform by the fifth transport unit.
The substrate is subjected to the exposure processing by the
exposure device, and then transported to the platform from the
exposure device by the fifth transport unit. After this, the
substrate is transported to the processing section from the
platform by the fourth transport unit.
[0034] The disposition of the fifth processing unit in the
interface and the transport of the substrate by the two transport
units enable the addition of processing contents without increasing
the footprint of the substrate processing apparatus.
[0035] (7)
[0036] The fourth transport unit may include first and second
holders for holding the substrate, the fourth transport unit may
hold the substrate with the first holder during the transport of
the substrate before the exposure processing by the exposure
device, and may hold the substrate with the second holder during
the transport of the substrate after the exposure processing by the
exposure device, the fifth transport unit may include third and
fourth holders for holding the substrate, and the fifth transport
unit may hold the substrate with the third holder during the
transport of the substrate before the exposure processing by the
exposure device, and may hold the substrate with the fourth holder
during the transport of the substrate after the exposure processing
by the exposure device.
[0037] In this case, the first and third holders are used during
the transport of the substrate to which no liquid is attached
before the exposure processing, while the second and fourth holders
are used during the transport of the substrate to which a liquid is
attached after the exposure processing. This prevents a liquid from
attaching to the first and third holders, which prevents the
attachment of a liquid to the substrate before the exposure
processing. This makes it possible to prevent contamination of the
substrate due to the attachment of particles and the like in the
atmosphere. As a result, it is possible to prevent the generation
of processing defects due to degradation in the resolution
performance or the like in the exposure device.
[0038] (8)
[0039] The second holder may be provided below the first holder,
and the fourth holder may be provided below the third holder. This
prevents a liquid that drops from the second and fourth holders and
substrates held thereon from attaching to the first and third
holders and substrates held thereon. This reliably prevents a
liquid from attaching to the substrate before the exposure
processing.
[0040] (9)
[0041] The fifth processing unit may include an edge exposure unit
that subjects a peripheral portion of the substrate to exposure. In
this case, the peripheral portion of the substrate is subjected to
the exposure processing by the edge exposure unit.
[0042] (10)
[0043] The second processing unit may further dry the substrate
after washing the substrate.
[0044] This prevents the attachment of particles and the like in
the atmosphere to the washed substrate. Also, if the washing liquid
remains on the washed substrate, the component of the
photosensitive material may be eluted in the residual washing
liquid. Thus, by drying the washed substrate, it is possible to
prevent the component of the photosensitive material on the
substrate from being eluted in the washing liquid remaining on the
substrate. It is therefore possible to reliably prevent a defective
shape of the photosensitive film formed on the substrate and the
contamination inside the exposure device. As a result of the
foregoing, processing defects of the substrate are reliably
prevented.
[0045] (11)
[0046] The second processing unit may comprise a substrate holding
device that holds the substrate substantially horizontally, a
rotation-driving device that rotates the substrate held on the
substrate holding device about an axis vertical to the substrate, a
washing liquid supplier that supplies a washing liquid onto the
substrate held on the substrate holding device, and an inert gas
supplier that supplies an inert gas onto the substrate after the
washing liquid has been supplied onto the substrate by the washing
liquid supplier.
[0047] In the second processing unit, the substrate is held on the
substrate holding device substantially horizontally, and the
substrate is rotated about the axis vertical to the substrate by
the rotation-driving device. Then, the washing liquid is supplied
onto the substrate from the washing liquid supplier, followed by
the supply of the inert gas from the inert gas supplier.
[0048] In this case, since the substrate is rotated as the washing
liquid is supplied onto the substrate, the washing liquid on the
substrate is constantly moved toward the peripheral portion of the
substrate by the centrifugal force, and splashed away. It is thus
possible to prevent the component of the photosensitive material
eluted in the washing liquid from remaining on the substrate. In
addition, since the substrate is rotated as the inert gas is
supplied onto the substrate, the washing liquid remaining on the
substrate after the washing of the substrate is efficiently
removed. This reliably prevents the component of the photosensitive
material from remaining on the substrate and the substrate dried
reliably. During the transport of the washed substrate to the
exposure device, therefore, it is possible to reliably prevent the
component of the photosensitive material on the substrate from
being further eluted in the washing liquid remaining on the
substrate. As a result, it is possible to reliably prevent a
defective shape of the photosensitive film formed on the substrate
and the contamination inside the exposure device.
[0049] (12)
[0050] The inert gas supplier may supply the inert gas so that the
washing liquid supplied onto the substrate from the washing liquid
supplier is removed from the substrate as the washing liquid moves
outwardly from the center of the substrate.
[0051] This prevents the washing liquid from remaining on the
center of the substrate, which reliably prevents the generation of
drymarks (dry stains) on the surface of the substrate. Also, during
the transport of the washed substrate to the exposure device, it is
possible to prevent the component of the photosensitive material
from being further eluted in the washing liquid remaining on the
substrate. It is thus possible to prevent processing defects of the
substrate more reliably.
[0052] (13)
[0053] The second processing unit may further comprise a rinse
liquid supplier that supplies a rinse liquid onto the substrate
after the supply of the washing liquid from the washing liquid
supplier and before the supply of the inert gas from the inert gas
supplier.
[0054] This allows the washing liquid to be reliably washed away by
the rinse liquid, making it possible to prevent the component of
the photosensitive material eluted in the washing liquid from
remaining on the substrate more reliably.
[0055] (14)
[0056] The inert gas supplier may supply the inert gas so that the
rinse liquid supplied onto the substrate from the rinse liquid
supplier is removed from the substrate as the rinse liquid moves
outwardly from the center of the substrate.
[0057] This prevents the rinse liquid from remaining on the center
of the substrate, which prevents the generation of dry marks on the
surface of the substrate reliably. Also, during the transport of
the washed substrate to the exposure device, it is possible to
reliably prevent the component of the photosensitive material on
the substrate from being further eluted in the rinse liquid
remaining on the substrate. As a result of the foregoing, it is
possible to prevent processing defects of the substrate more
reliably.
[0058] (15)
[0059] The second processing unit may wash the substrate by
supplying a fluid mixture containing a washing liquid and a gas
onto the substrate from a fluid nozzle.
[0060] Since the fluid mixture discharged from the fluid nozzle
contains fine droplets, any contaminants attached on the surface of
the substrate are stripped off, even if the surface has
irregularities. Moreover, even if the film on the substrate has low
wettability, the fine droplets strip off the contaminants on the
substrate surface, so that the contaminants can be reliably removed
from the substrate surface.
[0061] Consequently, even if the solvent or the like in the film on
the substrate is sublimated and the sublimates are attached to the
substrate again before the exposure processing, the sublimates
attached to the substrate can be reliably removed by the second
processing unit. It is therefore possible to reliably prevent the
contamination inside the exposure device. As a result of the
foregoing, processing defects of the substrate can be reliably
reduced.
[0062] In addition, adjusting the flow rate of the gas allows
adjustments to be easily made to the detergency in washing the
substrate. Thus, when the film on the substrate is prone to damage,
damage to the film on the substrate can be prevented by weakening
the detergency. Tough contaminants on the substrate surface can
also be removed reliably by strengthening the detergency. By
adjusting the detergency in this way according to the properties of
the film on the substrate and the degree of contamination, it is
possible to prevent damage to the film on the substrate and wash
the substrate reliably.
[0063] (16)
[0064] The gas may be an inert gas. In this case, it is possible to
prevent a chemical influence upon the film on the substrate and the
washing liquid while removing the contaminants on the substrate
surface more reliably, even if a chemical solution is used as
washing liquid.
[0065] (17)
[0066] The second processing unit may further dry the substrate
after washing the substrate.
[0067] This prevents the attachment of particles and the like in
the atmosphere to the washed substrate. Also, if the washing liquid
remains on the washed substrate, the component of the
photosensitive film on the substrate may be eluted in the residual
washing liquid. Thus, by drying the washed substrate, it is
possible to prevent the component of the photosensitive film on the
substrate from being eluted in the washing liquid remaining on the
substrate. It is therefore possible to reliably prevent a defective
shape of the photosensitive film formed on the substrate and the
contamination inside the exposure device. As a result of the
foregoing, processing defects of the substrate are reliably
prevented.
[0068] (18)
[0069] The second processing unit may include an inert gas supplier
that dries the substrate by supplying an inert gas onto the
substrate. The use of the inert gas prevents a chemical influence
upon the film on the substrate and the substrate is reliably
dried.
[0070] (19)
[0071] The fluid nozzle may function as inert gas supplier. In this
case, the inert gas is supplied onto the substrate from the fluid
nozzle to apply drying processing to the substrate. This obviates
the need to provide the inert gas supplier separately from the
fluid nozzle. As a result, the washing and drying processing can be
reliably applied to the substrate with a simple structure.
[0072] (20)
[0073] The second processing unit may further include a substrate
holding device that holds the substrate substantially horizontally,
and a rotation-driving device that rotates the substrate held on
the substrate holding device about an axis vertical to the
substrate.
[0074] In the second processing unit, the substrate is held on the
substrate holding device substantially horizontally, and the
substrate is rotated about the axis vertical to the substrate by
the rotation-driving device. Further, the fluid mixture is supplied
onto the substrate from the fluid nozzle, followed by the supply of
the inert gas from the inert gas supplier.
[0075] In this case, since the substrate is rotated as the fluid
mixture is supplied onto the substrate, the fluid mixture on the
substrate moves toward the peripheral portion of the substrate by
the centrifugal force and splashed away. This reliably prevents the
deposits of particles and the like removed by the fluid mixture
from remaining on the substrate. In addition, since the substrate
is rotated as the inert gas is supplied onto the substrate, the
fluid mixture remaining on the substrate after the washing of the
substrate is efficiently removed. This reliably prevents the
deposits of particles and the like from remaining on the substrate
and the substrate dried reliably. As a result, processing defects
of the substrate are prevented reliably.
[0076] (21)
[0077] The second processing unit may supply the inert gas so that
the fluid mixture supplied onto the substrate from the fluid nozzle
is removed from the substrate as the fluid mixture moves outwardly
from the center of the substrate.
[0078] This prevents the fluid mixture from remaining on the center
of the substrate, thus reliably preventing the generation of dry
marks on a surface of the substrate. Accordingly, processing
defects of the substrate are prevented reliably.
[0079] (22)
[0080] The second processing unit may further include a rinse
liquid supplier that supplies a rinse liquid onto the substrate,
after the supply of the fluid mixture from the fluid nozzle and
before the supply of the inert gas from the inert gas supplier.
[0081] This allows the fluid mixture to be reliably washed away by
the rinse liquid, thus reliably preventing the deposits of
particles and the like from remaining on the substrate.
[0082] (23)
[0083] The fluid nozzle may function as the rinse liquid supplier.
In this case, the rinse liquid is supplied from the fluid nozzle.
This obviates the need to provide the rinse liquid supplier
separately from the fluid nozzle. As a result, the washing and
drying processing can be reliably applied to the substrate with a
simple structure.
[0084] (24)
[0085] The second processing unit may supply the inert gas so that
the rinse liquid supplied onto the substrate from the rinse liquid
supplier is removed from the substrate as the rinse liquid moves
outwardly from the center of the substrate.
[0086] This prevents the rinse liquid from remaining on the center
of the substrate, thus reliably preventing the generation of dry
marks on the surface of the substrate. Accordingly, processing
defects of the substrate are prevented reliably.
[0087] (25)
[0088] The fluid nozzle may have a liquid flow passage through
which a liquid flows, a gas flow passage through which a gas flows,
a liquid discharge port having an opening that communicates with
the liquid flow passage, and a gas discharge port that is provided
near the liquid discharge port and has an opening that communicates
with the gas flow passage.
[0089] In this case, the washing liquid flows through the liquid
flow passage, and is discharged from the liquid discharge port,
while the gas flows through the gas flow passage, and is discharged
from the gas discharge port. The washing liquid and gas are mixed
outside the fluid nozzle. A mist-like fluid mixture is thus
generated.
[0090] In this way, the fluid mixture is generated by mixing the
washing liquid and the gas outside the fluid nozzle. This obviates
the need to provide space for mixing the washing liquid and the gas
inside the fluid nozzle. As a result, the size of the fluid nozzle
can be reduced.
[0091] (26)
[0092] A substrate processing method according to another aspect of
the present invention for processing a substrate in a substrate
processing apparatus that is arranged adjacent to an exposure
device and comprises a first processing unit, a second processing
unit, and a third processing unit comprises the steps of forming a
photosensitive film made of a photosensitive material on the
substrate by the first processing unit before the exposure
processing by said exposure device, washing the substrate after the
formation of the photosensitive film by the first processing unit
and before the exposure processing by the exposure device, and
applying development processing to the substrate by the third
processing unit after the exposure processing by the exposure
device.
[0093] In the substrate processing method, after the formation of
the photosensitive film made of a photosensitive material on the
substrate by the first processing unit, the substrate is subjected
to washing processing by the second processing unit. After this,
the substrate is subjected to exposure processing by the exposure
device. After the exposure processing, the substrate is subjected
to development processing in the third processing unit.
[0094] In this way, the substrate is subjected to washing
processing by the second processing unit before the exposure
processing by the exposure device. Part of the component of the
photosensitive film formed on the substrate by the first processing
unit is thus eluted, and washed away. In this case, even if the
substrate in contact with a liquid is subjected to the exposure
processing by the exposure device, the component of the
photosensitive material on the substrate is hardly eluted. This
reduces contamination in the exposure device while preventing the
component of the photosensitive material from remaining on a
surface of the substrate. As a result, processing defects of the
substrate that may be generated in the exposure device can be
reduced.
[0095] (27)
[0096] The method may further comprise the step of drying the
substrate by the second processing unit, after the step of washing
the substrate by the second processing unit and before the step of
exposure processing by the exposure device.
[0097] In this case, the washed substrate is dried by the second
processing unit, which prevents the attachment of particles and the
like in the atmosphere on the washed substrate. Also, if the
washing liquid remains on the washed substrate, the component of
the photosensitive material may be eluted in the residual washing
liquid. Thus, by drying the washed substrate, it is possible to
prevent the component of the photosensitive material on the
substrate from being eluted in the washing liquid remaining on the
substrate. It is therefore possible to reliably prevent a defective
shape of the photosensitive film formed on the substrate and the
contamination inside the exposure device. As a result of the
foregoing, processing defects of the substrate are reliably
prevented.
[0098] According to the invention, the substrate is subjected to
washing processing by the second processing unit before the
exposure processing by the exposure device. In this case, even if
the substrate in contact with a liquid is subjected to the exposure
processing by the exposure device, the component of the
photosensitive material on the substrate is hardly eluted. This
reduces contamination in the exposure device while preventing the
component of the photosensitive material from remaining on a
surface of the substrate. As a result, processing defects of the
substrate that may be generated in the exposure device are
reduced.
[0099] The foregoing and other objects, features, aspects and
advantages of the present invention will become more apparent from
the following detailed description of the present invention when
taken in conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0100] FIG. 1 is a plan view of a substrate processing apparatus
according to an embodiment of the invention;
[0101] FIG. 2 is a side view of the substrate processing apparatus
in FIG. 1 that is seen from the +X direction;
[0102] FIG. 3 is a side view of the substrate processing apparatus
in FIG. 1 that is seen from the -X direction;
[0103] FIG. 4 is a diagram for use in illustrating the
configuration of the washing processing unit;
[0104] FIGS. 5(a), 5(b), and 5(c) are diagrams for use in
illustrating the operation of the washing processing unit;
[0105] FIG. 6 is a schematic diagram of a nozzle in which a nozzle
for washing processing and a nozzle for drying processing are
formed integrally;
[0106] FIG. 7 is a schematic diagram showing another example of the
nozzle for drying processing;
[0107] FIGS. 8(a), 8(b), and 8(c) are diagrams for use in
illustrating a method of applying drying processing to a substrate
using the nozzle in FIG. 7;
[0108] FIG. 9 is a schematic diagram showing another example of the
nozzle for drying processing;
[0109] FIG. 10 is a schematic diagram showing another example of
the washing processing unit;
[0110] FIG. 11 is a diagram for use in illustrating a method of
applying drying processing to the substrate using the washing
processing unit in FIG. 10;
[0111] FIG. 12 is a diagram for use in illustrating the
configuration and operation of the interface transport
mechanism;
[0112] FIG. 13 is a longitudinal cross section showing an example
of the internal structure of a two-fluid nozzle for use in washing
and drying processing; and
[0113] FIGS. 14(a), 14(b), and 14(c) are diagrams for use in
illustrating a method of applying washing and drying processing to
the substrate using the two-fluid nozzle in FIG. 13.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0114] A substrate processing apparatus according to embodiments of
the invention will be described below with reference to the
drawings. A substrate as used in the specification includes a
semiconductor substrate, a substrate for a liquid crystal display,
a substrate for a plasma display, a glass substrate for a
photomask, a substrate for an optical disk, a substrate for a
magnetic disk, a substrate for a magneto-optical disk, and a
substrate for a photomask.
[0115] FIG. 1 is a plan view of a substrate processing apparatus
according to an embodiment of the invention.
[0116] FIG. 1 and each of the subsequent drawings is accompanied by
the arrows that indicate X, Y, and Z directions perpendicular to
one another, for clarification of positions. The X and Y directions
are perpendicular to each other in a horizontal plane, and the Z
direction corresponds to the vertical direction. In each of the
directions, the direction toward an arrow is defined as +
direction, and the opposite direction is defined as - direction.
The rotation direction about the Z direction is defined as .theta.
direction.
[0117] As shown in FIG. 1, the substrate processing apparatus 500
includes an indexer block 9, an anti-reflection film processing
block 10, a resist film processing block 11, a washing/development
processing block 12, and an interface block 13. An exposure device
14 is arranged adjacent to the interface block 13. The exposure
device 14 applies exposure processing to substrates W by a liquid
immersion method.
[0118] Each of the indexer block 9, anti-reflection film processing
block 10, resist film processing block 11, washing/development
processing block 12, and interface block 13 will hereinafter be
referred to as a processing block.
[0119] The indexer block 9 includes a main controller (controller)
30 for controlling the operation of each processing block, a
plurality of carrier platforms 60, and an indexer robot IR. The
indexer robot IR has a hand IRH for receiving and transferring the
substrates W.
[0120] The anti-reflection film processing block 10 includes
thermal processing groups 100, 101 for anti-reflection film, a
coating processing group 70 for anti-reflection film, and a first
central robot CR1. The coating processing group 70 is arranged
opposite to the thermal processing groups 100, 101 with the first
central robot CR1 therebetween. The first central robot CR1 has
hands CRH1, CRH2 provided one above the other for receiving and
transferring the substrates W.
[0121] A partition wall 15 is arranged between the indexer block 9
and the anti-reflection film processing block 10 for shielding an
atmosphere. The partition wall 15 has substrate platforms PASS1,
PASS2 provided closely one above the other for receiving and
transferring the substrates W between the indexer block 9 and the
anti-reflection film processing block 10. The upper substrate
platform PASS1 is used in transferring the substrates W from the
indexer block 9 to the anti-reflection film processing block 10,
and the lower substrate platform PASS2 is used in transferring the
substrates W from the anti-reflection film processing block 10 to
the indexer block 9.
[0122] Each of the substrate platforms PASS1, PASS2 has an optical
sensor (not shown) for detecting the presence or absence of a
substrate W. This enables a determination to be made whether or not
a substrate W is on the substrate platform PASS1, PASS2. In
addition, each of the substrate platforms PASS1, PASS2 has a
plurality of support pins secured thereto. Note that each of
substrate platforms PASS3 to PASS10 mentioned below similarly has
such optical sensor and support pins.
[0123] The resist film processing block 11 includes thermal
processing groups 110, 111 for resist film, a coating processing
group 80 for resist film, and a second central robot CR2. The
coating processing group 80 is arranged opposite to the thermal
processing groups 110, 111 with the second central robot CR2
therebetween. The second central robot CR2 has hands CRH3, CRH4
provided one above the other for receiving and transferring the
substrates W.
[0124] A partition wall 16 is arranged between the anti-reflection
film processing block 10 and the resist film processing block 11
for shielding an atmosphere. The partition wall 16 has substrate
platforms PASS3, PASS4 provided closely one above the other for
receiving and transferring the substrates W between the
anti-reflection film processing block 10 and the resist film
processing block 11. The upper substrate platform PASS3 is used in
transferring the substrates W from the anti-reflection film
processing block 10 to the resist film processing block 11. The
lower substrate platform PASS4 is used in transferring the
substrates W from the resist film processing block 11 to the
anti-reflection film processing block 10.
[0125] The washing/development processing block 12 includes a
thermal processing group 120 for development, a thermal processing
group 121 for post-exposure bake, a development processing group
90, a washing processing group 95, and a third central robot CR3.
The thermal processing group 121, adjacent to the interface block
13, has substrate platforms PASS7, PASS8 as described below. The
development processing group 90 and the washing processing group 95
are arranged opposite to the thermal processing groups 120, 121
with the third central robot CR3 therebetween. The third central
robot CR3 has hands CRH5, CRH6 provided one above the other for
receiving and transferring the substrates W.
[0126] A partition wall 17 is arranged between the resist film
processing block 11 and the washing/development processing block 12
for shielding an atmosphere. The partition wall 17 has substrate
platforms PASS5, PASS6 provided closely one above the other for
receiving and transferring the substrates W between the resist film
processing block 11 and the washing/development processing block
12. The upper substrate platform PASS5 is used in transferring the
substrates W from the resist film processing block 11 to the
washing/development processing block 12, and the lower substrate
platform PASS6 is used in transferring the substrates W from the
washing/development processing block 12 to the resist film
processing block 11.
[0127] The interface block 13 includes a fourth central robot CR4,
a feed buffer unit SBF, an interface transport mechanism IFR, and
edge exposure units EEW. A return buffer unit RBF and substrate
platforms PASS 9, PASS10 are provided under the edge exposure units
EEW as described below. The fourth central robot CR4 has hands
CRH7, CRH8 provided one above the other for receiving and
transferring the substrates W.
[0128] In the substrate processing apparatus 500 of the embodiment,
the indexer block 9, the anti-reflection film processing block 10,
resist film processing block 11, washing/development processing
block 12, and interface block 13 are sequentially arranged in
parallel along the Y direction.
[0129] FIG. 2 is a side view of the substrate processing apparatus
500 in FIG. 1 that is seen from the + X direction.
[0130] The coating processing group 70 in the anti-reflection film
processing block 10 (see FIG. 1) includes a vertical stack of three
coating units BARC. Each of the coating units BARC comprises a spin
chuck 71 for rotating a substrate W while holding the substrate W
in a horizontal attitude by suction, and a supply nozzle 72 for
supplying coating liquid for an anti-reflection film to the
substrate W held on the spin chuck 71.
[0131] The coating processing group 80 in the resist film
processing block 11 (see FIG. 1) includes a vertical stack of three
coating units RES. Each of the coating units RES comprises a spin
chuck 81 for rotating a substrate W while holding the substrate W
in a horizontal attitude by suction, and a supply nozzle 82 for
supplying coating liquid for a resist film to the substrate W held
on the spin chuck 81.
[0132] The washing/development processing block 12 includes a
vertical stack of the development processing group 90 and the
washing processing group 95. The development processing group 90
includes a vertical stack of four development processing units DEV.
Each of the development processing units DEV comprises a spin chuck
91 for rotating a substrate W while holding the substrate W in a
horizontal attitude by suction, and a supply nozzle 92 for
supplying development liquid to the substrate W held on the spin
chuck 91.
[0133] The washing processing group 95 includes a washing
processing unit SOAK. The washing processing unit SOAK apply
washing and drying processing to the substrates W. The washing
processing unit SOAK will be described in detail below.
[0134] The interface block 13 includes a vertical stack of two edge
exposure units EEW, a return buffer unit RBF and substrate
platforms PASS9, PASS10, and also includes the fourth central robot
CR4 (see FIG. 1) and interface transport mechanism IFR. Each of the
edge exposure units EEW comprises a spin chuck 98 for rotating a
substrate W while holding the substrate W in a horizontal attitude
by suction, and a light irradiator 99 for subjecting a peripheral
edge of the substrate W held on the spin chuck 98 to exposure.
[0135] FIG. 3 is a side view of the substrate processing apparatus
500 in FIG. 1 that is seen from the -X direction.
[0136] In the anti-reflection film processing block 10, the thermal
processing group 100 includes a vertical stack of two cooling units
(cooling plates) CP, and the thermal processing group 101 includes
a vertical stack of four heating units (hot plates) HP and two
cooling units CP. The thermal processing group 100 also includes a
local controller LC on top thereof for controlling the temperatures
of the cooling units CP, and the thermal processing group 101 also
includes a local controller LC on top thereof for controlling the
temperatures of the-heating units HP and the cooling plates CP.
[0137] In the resist film processing block 11, the thermal
processing group 110 includes a vertical stack of four cooling
units CP, and the thermal processing group 110 includes a vertical
stack of five heating units HP. The thermal processing group 110
also includes a local controller LC on top thereof for controlling
the temperatures of the cooling units CP, and the thermal
processing group 111 also includes a local controller LC on top
thereof for controlling the temperatures of the heating units
HP.
[0138] In the washing/development processing block 12, the thermal
processing group 120 includes a vertical stack of three heating
units HP and four cooling units CP, and the thermal processing
group 121 includes a vertical stack of four heating units HP,
substrate platforms PASS7, PASS8, and two cooling units CP. The
thermal processing group 120 also includes a local controller LC on
top thereof for controlling the temperatures of the heating units
HP and the cooling units CP, and the thermal processing group 121
also includes a local controller LC for controlling the
temperatures of the heating units HP and the cooling units CP.
[0139] Next, the operation of the substrate processing apparatus
500 in this embodiment will be described.
[0140] Carriers C for storing the substrates W in multiple stages
are mounted on the carrier platforms 60, respectively, in the
indexer block 9. The indexer robot IR takes out a substrate W yet
to be processed which is stored in a carrier C using the hand IRH.
Then, the indexer robot IR moves in the .+-.X direction while
rotating in the .+-..theta. direction to transfer the unprocessed
substrate W onto the substrate platform PASS1.
[0141] Although FOUPs (Front Opening Unified Pods) are adopted as
the carriers C in this embodiment, SMIF (Standard Mechanical Inter
Face) pods or OCs (Open Cassettes) that expose stored substrates W
to outside air may also be used, for example. In addition, although
linear-type transport robots that move their hands forward or
backward by sliding them linearly to a substrate W are used as the
indexer robot IR, the first central robot CR1 to the fourth central
robot CR4, and the interface transport mechanism IFR, multi-joint
type transport robots that linearly move their hands forward and
backward by moving their joints may also be used.
[0142] The unprocessed substrate W that has been transferred onto
the substrate platform PASS1 is received by the hand CRH1 of the
first central robot CR1 in the anti-reflection film processing
block 10. The first central robot CR1 carries the substrate W to
the coating processing group 70 with the hand CRH1. The coating
processing group 70 forms a coating of an anti-reflection film on a
substrate W using a coating unit BARC, in order to reduce potential
standing waves and halation generated during exposure.
[0143] After this, the first central robot CR1 takes out the
substrate W after the coating processing from coating processing
group 70 with the hand CRH2, and carries the substrate W to the
thermal processing group 100 or 101.
[0144] The first central robot CR1 subsequently takes out the
thermally treated substrate W from the thermal processing group 100
or 101 with the hand CRH1, and then transfers the substrate W onto
the substrate platform PASS3.
[0145] The substrate Won the substrate platform PASS3 is received
by the hand CRH3 of the second central robot CR2 in the resist film
processing block 11. The second central robot CR2 carries the
substrate W to the coating processing group 80 with the hand CRH3.
The coating processing group 80 forms a coating of a resist film
over the substrate W coated with the anti-reflection film by a
coating unit RES.
[0146] After this, the second central robot CR2 takes out the
substrate W after the coating processing from the coating
processing group 80 with the handCRH4, and carries the substrate W
to the thermal processing group 110 or 111.
[0147] The second central robot CR2 subsequently takes out the
thermally treated substrate W from the thermal processing group 110
or 111 with the hand CRH3, and transfers the substrate W onto the
substrate platform PASS5.
[0148] The substrate Won the substrate platform PASS5 is received
by the hand CRH5 of the third central robot CR3 in the
washing/development processing block 12. The third central robot
CR3 carries the substrate W to the washing processing group 95 with
the hand CRH5. As described above, the washing processing group 95
applies washing and drying processing to the substrate W by a
washing processing unit SOAK.
[0149] After this, the third central robot CR3 takes out the
processed substrate W from the washing processing unit SOAK with
the hand CRH5, and transfers the substrate W onto the substrate
platform PASS7. The substrate W on the substrate platform PASS7 is
received by the upper hand CRH7 of the fourth central robot CR4 in
the interface block 13. The fourth central robot CR4 transfers the
substrate W to an edge exposure unit EEW. The edge exposure unit
EEW applies exposure processing to the peripheral portion of the
substrate W.
[0150] Then, the fourth central robot CR4 takes out the substrate W
after the edge exposure processing from the edge exposure unit EEW
with the hand CRH7. After this, the fourth central robot CR4
transfers the substrate W onto the substrate platform PASS9 with
the hand CRH7.
[0151] The substrate W on the substrate platform PASS9 is carried
into the exposure device 14 by the hand H5 of the interface
transport mechanism IFR. After exposure processing has been applied
to the substrate W by the exposure device 14, the interface
transport mechanism IFR transports the substrate W onto the
substrate platform PASS10 with hand H6. The interface transport
mechanism IFR will be described below.
[0152] The substrate W on the substrate platform PASS10 is received
by the lower hand CRH8 of the fourth central robot CR4 in the
interface block 13. The fourth central robot CR4 carries the
substrate W into the thermal processing group 121 in the
washing/development processing block 12 with the hand CRH8. The
substrate W is subjected to a post-exposure bake (PEB) by the
thermal processing group 121. After this, the fourth central robot
CR4 takes out the substrate W from the thermal processing group 121
with the hand CRH8, and transfers the substrate W onto the
substrate platform PASS8.
[0153] The substrate Won the substrate platform PASS8 is received
by the hand CRH6 of the third central robot CR3 in the
washing/development processing block 12. The third central robot
CR3 carries the substrate W into the development processing group
90 with the hand CRH6. The development processing group 90 applies
development processing to the substrate W by the development
processing unit DEV.
[0154] After this, the third central robot CR3 takes out the
substrate W after the development processing from the development
processing group 90 with the hand CRH5, and transfers the substrate
W to the thermal processing group 120.
[0155] Then, the third central robot CR3 takes out the thermally
treated substrate W from the thermal processing group 120 with the
hand CRH6, and transfers the substrate W onto the substrate
platform PASS6.
[0156] If the development processing group 90 is temporarily not
capable of applying development processing to the substrate W by,
e.g., a failure, the substrate W may temporarily be stored in the
return buffer unit RBF in the interface block 13 after the thermal
treatment in the thermal processing group 121.
[0157] The substrate W on the substrate platform PASS6 is
transferred onto the substrate platform PASS4 by the hand CRH4 of
the second central robot CR2 in the resist film processing block
11. The substrate W on the substrate platform PASS4 is transferred
onto the substrate platform PASS2 by the hand CRH2 of the first
central robot CR1 in the anti-reflection film processing block
10.
[0158] The substrate W on the substrate platform PASS2 is stored in
a carrier C by the indexer robot IR in the indexer block 9. Each of
the processing to the substrate W in the substrate processing
apparatus is thus completed.
[0159] The aforementioned washing processing unit SOAK is now
described in detail with reference to the drawings.
[0160] The configuration of the washing processing unit SOAK is
first described. FIG. 4 is a diagram for use in illustrating the
configuration of the washing processing unit SOAK.
[0161] As shown in FIG. 4, the washing processing unit SOAK
comprises a spin chuck 621 for rotating a substrate W about the
vertical rotation axis passing through the center of the substrate
W while horizontally holding the substrate W.
[0162] The spin chuck 621 is secured to an upper end of a rotation
shaft 625, which is rotated via a chuck rotation-drive mechanism
636. An air suction passage (not shown) is formed in the spin chuck
621. With the substrate W being mounted on the spin chuck 621, air
inside the air suction passage is discharged, so that a lower
surface of the substrate W is sucked onto the spin chuck 621 by
vacuum, and the substrate W is held in a horizontal attitude.
[0163] A first rotation motor 660 is arranged outside the spin
chuck 621. The first rotation motor 660 is connected to a first
rotation shaft 661. The first rotation shaft 661 is coupled to a
first arm 662, which extends in the horizontal direction, and whose
end is provided with a nozzle 650 for washing processing.
[0164] The first rotation shaft 661 is rotated by the first
rotation motor 660, so that the first arm 662 swings. This causes
the nozzle 650 to move above the substrate W held on the spin chuck
621.
[0165] A supply pipe 663 for washing processing is arranged so as
to pass through the inside of the first rotation motor 660, first
rotation shaft 661, and first arm 662. The supply pipe 663 is
connected to a washing liquid supply source R1 and a rinse liquid
supply source R2 through a valve Va and a valve Vb, respectively.
Controlling the opening and closing of the valves Va, Vb allows the
selection of the processing liquid supplied to the supply pipe 663
and adjustments of the amount thereof. In the configuration of FIG.
4, when the valve Va is opened, washing liquid is supplied to the
supply pipe 663, and when the valve Vb is opened, rinse liquid is
supplied to the supply pipe 663.
[0166] The washing liquid or the rinse liquid is supplied to the
nozzle 650 through the supply pipe 663 from the washing liquid
supply source R1 or the rinse liquid supply source R2. The washing
liquid or the rinse liquid is thus supplied to a surface of the
substrate W. Examples of the washing liquid may include pure water,
a pure water solution containing a complex (ionized), or a
fluorine-based chemical solution. Examples of the rinse liquid may
include pure water, carbonated water, hydrogen water, electrolytic
ionic water, and HFE (hydrofluoroether).
[0167] A second rotation motor 671 is arranged outside the spin
chuck 621. The second rotation motor 671 is connected to a second
rotation shaft 672. The second rotation shaft 672 is coupled to a
second arm 673, which extends in the horizontal direction, and
whose end is provided with a nozzle 670 for drying processing.
[0168] The second rotation shaft 672 is rotated by the second
rotation motor 671, so that the second arm 673 swings. This causes
the nozzle 670 to move above the substrate W held on the spin chuck
621.
[0169] A supply pipe 674 for drying processing is arranged so as to
pass through the inside of the second rotation motor 671, second
rotation shaft 672, and second arm 673. The supply pipe 674 is
connected to an inert gas supply source R3 through a valve Vc.
Controlling the opening and closing of the valve Vc allows
adjustments to be made to the amount of the inert gas supplied to
the supply pipe 674.
[0170] The inert gas is supplied to the nozzle 670 through the
supply pipe 674 from the inert gas supply source R3. The inert gas
is thus supplied to the surface of the substrate W. Nitrogen gas
(N.sub.2), for example, may be used as the inert gas.
[0171] When supplying the washing liquid or the rinse liquid onto
the surface of the substrate W, the nozzle 650 is positioned above
the substrate. When supplying the inert gas onto the surface of the
substrate W, the nozzle 650 is retracted to a predetermined
position.
[0172] When supplying the washing liquid or the rinse liquid onto
the surface of the substrate W, the nozzle 670 is retracted to a
predetermined position. When supplying the inert gas onto the
surface of the substrate W, the nozzle 670 is positioned above the
substrate W.
[0173] The substrate W held on the spin chuck 621 is housed in a
processing cup 623. A cylindrical partition wall 633 is provided
inside the processing cup 623. A discharge space 631 is formed so
as to surround the spin chuck 621 for discharging the processing
liquid (i.e., washing liquid or rinse liquid) used in processing
the substrate W. Also, a liquid recovery space 632 is formed
between the processing cup 623 and the partition wall 633, so as to
surround the discharge space 631, for recovering the processing
liquid used in processing the substrate W.
[0174] The discharge space 631 is connected with a discharge pipe
634 for directing the processing liquid to a liquid discharge
processing device (not shown), while the liquid recovery space 632
is connected with a recovery pipe 635 for directing the processing
liquid to a recovery processing device (not shown)
[0175] A guard 624 is provided above the processing cup 623 for
preventing the processing liquid on the substrate W from splashing
outward. The guard 624 is configured to be rotation-symmetric with
respect to the rotation shaft 625. A liquid discharge guide groove
641 with a V-shaped cross section is formed in a circular shape
inwardly of an upper end portion of the guard 624.
[0176] Also, a liquid recovery guide 642 having an inclined surface
that inclines down outwardly is formed inwardly of a lower portion
of the guard 624. A partition wall housing groove 643 for receiving
the partition wall 633 in the processing cup 623 is formed in the
vicinity of the upper end of the liquid recovery guide 642.
[0177] This guard 624 is provided with a guard lifting mechanism
(not shown) composed of a ball screw mechanism or the like. The
guard lifting mechanism lifts and lowers the guard 624 between a
recovery position in which the liquid recovery guide 642 is
positioned opposite to outer edges of the substrate W held on the
spin chuck 621 and a discharge position in which the liquid
discharge guide groove 641 is positioned opposite to the outer
edges of the substrate W held on the spin chuck 621. When the guard
624 is in the recovery position (i.e., the position of the guard
shown in FIG. 4), the processing liquid splashed out from the
substrate W is directed by the liquid recovery guide 642 to the
liquid recovery space 632, and then recovered through the recovery
pipe 635. On the other hand, when the guard 624 is in the discharge
position, the processing liquid splashed out from the substrate W
is directed by the liquid discharge guide groove 641 to the
discharge space 631, and then discharged through the discharge pipe
634. With the above-described configuration, discharge and recovery
of the processing liquid is performed.
[0178] The processing operation of the washing processing unit SOAK
having the above-described configuration is next described. Note
that the operation of each component in the washing processing unit
SOAK described below is controlled by the main controller 30 in
FIG. 1.
[0179] When the substrate W is initially carried into the washing
processing unit SOAK, the guard 624 is lowered, and the third
central robot CR3 in FIG. 1 places the substrate W onto the spin
chuck 621. The substrate W on the spin chuck 621 is held by
suction.
[0180] Next, the guard 624 moves to the aforementioned discharge
position, and the nozzle 650 moves above the center of the
substrate W. Then, the rotation shaft 625 rotates, causing the
substrate W held on the spin chuck 621 to rotate. After this, the
washing liquid is discharged onto the top surface of the substrate
W from the nozzle 650. The substrate W is thus washed, and part of
the component of the resist on the substrate W is eluted in the
washing liquid. During the washing, the substrate W is rotated as
the washing liquid is supplied onto the substrate W. This causes
the washing liquid on the substrate W to constantly move toward a
peripheral portion of the substrate W by the centrifugal force, and
splashed away. It is therefore possible to prevent the component of
the resist eluted in the washing liquid from remaining on the
substrate W. Note that the aforementioned resist component may be
eluted with pure water being poured onto the substrate Wand kept
thereon for a certain period. The supply of the washing liquid onto
the substrate W may also be executed by a soft spray method using a
two-fluid nozzle.
[0181] After the elapse of a predetermined time, the supply of the
washing liquid is stopped, and the rinse liquid is discharged from
the nozzle 650. The washing liquid on the substrate W is thus
washed away. As a result, it is possible to reliably prevent the
resist components eluted in the washing liquid from remaining on
the substrate W.
[0182] After the elapse of another predetermined time, the rotation
speed of the rotation shaft 625 decreases. This reduces the amount
of the rinse liquid that is shaken off by the rotation of the
substrate W, resulting in the formation of a liquid layer L of the
rinse liquid over the entire surface of the substrate W, as shown
in FIG. 5(a). Alternatively, the rotation of the rotation shaft 625
may be stopped to form the liquid layer L over the entire surface
of the substrate W.
[0183] The embodiment employs the configuration in which the nozzle
650 is used for supplying both the washing liquid and the rinse
liquid, so as to supply both the washing liquid and the rinse
liquid from the nozzle 650. However, a configuration may also be
employed in which nozzles are separately provided for supplying the
washing liquid and the rinse liquid.
[0184] In order to prevent the rinse liquid from flowing to the
back surface of the substrate W during the supply of the rinse
liquid, pure water may be supplied to the back surface of the
substrate W from a back rinsing nozzle (not shown).
[0185] Note that when using pure water as the washing liquid for
washing the substrate W, it is not necessary to supply the rinse
liquid.
[0186] The supply of the rinse liquid is subsequently stopped, and
the nozzle 650 retracts to the predetermined position while the
nozzle 670 moves above the center of the substrate W. The inert gas
is subsequently discharged from the nozzle 670. This causes the
rinse liquid around the center of the substrate W to move toward a
peripheral portion of the substrate W, leaving the liquid layer L
only on the peripheral portion, as shown in FIG. 5(b).
[0187] Next, as the number of revolutions of the rotation shaft 625
(see FIG. 4) increases, the nozzle 670 gradually moves from above
the center of the substrate W to above the peripheral portion
thereof, as shown in FIG. 5(c). This causes a great centrifugal
force acting on the liquid layer L on the substrate W while
allowing the inert gas to be sprayed toward the entire surface of
the substrate W, thereby ensuring the removal of the liquid layer L
on the substrate W. As a result, the substrate W can be reliably
dried.
[0188] Then, the supply of the inert gas is stopped, and the nozzle
670 retracts to the predetermined position while the rotation of
the rotation shaft 625 is stopped. After this, the guard 624 is
lowered, and the third central robot CR3 in FIG. 1 carries the
substrate W out of the washing processing unit SOAK. The processing
operation of the washing processing unit SOAK is thus
completed.
[0189] It is preferred that the position of the guard 624 during
washing and drying processing is suitably changed according to the
necessity of the recovery or discharge of the processing
liquid.
[0190] Moreover, although the washing processing unit SOAK shown in
FIG. 4 includes the nozzle 650 for washing processing and the
nozzle 670 for drying processing separately, the nozzle 650 and the
nozzle 670 may also be formed integrally, as shown in FIG. 6. This
obviates the need to move each of the nozzle 650 and the nozzle 670
separately during the washing or drying processing to the substrate
W, thereby simplifying the driving mechanism.
[0191] A nozzle 770 for drying processing as shown in FIG. 7 may
also be used instead of the nozzle 670 for drying processing.
[0192] The nozzle 770 in FIG. 7 extends vertically downward, and
also has branch pipes 771, 772 that extend obliquely downward from
sides thereof. A gas discharge port 770a is formed at the lower end
of the branch pipe 771, a gas discharge port 770b is formed at the
lower end of the nozzle 770, and a gas discharge port 770c is
formed at the lower end of the branch pipe 772, each for
discharging an inert gas. The discharge port 770b discharges an
inert gas vertically downward, and the discharge ports 770a, 770c
each discharge an inert gas obliquely downward, as indicated by the
arrows in FIG. 7. That is to say, the nozzle 770 discharges the
inert gas so as to increase the spraying area downwardly.
[0193] Now, a washing processing unit SOAK using the nozzle 770 for
drying processing applies drying processing to the substrate W as
will now be described.
[0194] FIGS. 8(a), 8(b), 8(c) are diagrams for use in illustrating
a method of applying drying processing to the substrate W using the
nozzle 770.
[0195] Initially, a liquid layer L is formed on the surface of the
substrate W by the method as described in FIG. 5(a), and then the
nozzle 770 moves above the center of the substrate W, as shown in
FIG. 8(a). After this, an inert gas is discharged from the nozzle
770. This causes the rinse liquid on the center of the substrate W
to move to the peripheral portion of the substrate W, leaving the
liquid layer L only on the peripheral portion of the substrate W,
as shown in FIG. 8(b). At the time, the nozzle 770 is brought close
to the surface of the substrate W so as to reliably move the rinse
liquid present on the center of the substrate W.
[0196] Next, as the number of revolutions of the rotation shaft 625
(see FIG. 4) increases, the nozzle 770 moves upward as shown in
FIG. 8(c). This causes a great centrifugal force acting on the
liquid layer L on the substrate W while increasing the area to
which the inert gas is sprayed on the substrate W. As a result, the
liquid layer L on the substrate W is reliably removed. Note that
the nozzle 770 can be moved up and down by lifting and lowering the
second rotation shaft 672 via a rotation shaft lifting mechanism
(not shown) provided to the second rotation shaft 672 in FIG.
4.
[0197] Alternatively, a nozzle 870 for drying processing as shown
in FIG. 9 may be used instead of the nozzle 770. The nozzle 870 in
FIG. 9 has a discharge port 870a whose diameter gradually increases
downward. This discharge port 870a discharges an inert gas
vertically downward and obliquely downward as indicated by the
arrows in FIG. 9. That is, similarly to the nozzle 770 in FIG. 7,
the nozzle 870 discharges the inert gas so as to increase the
spraying area downwardly. Consequently, drying processing similar
to that using the nozzle 770 can be applied to the substrate W
using the nozzle 870.
[0198] A washing processing unit SOAKa as shown in FIG. 10 may also
be used instead of the washing processing unit SOAK shown in FIG.
4.
[0199] The washing processing unit SOAKa in FIG. 10 is different
from the washing processing unit SOAK in FIG. 4 as described
below.
[0200] The washing processing unit SOAKa in FIG. 10 includes above
the spin chuck 621 a disk-shaped shield plate 682 having an opening
through the center thereof. A support shaft 689 extends vertically
downward from around an end of an arm 688, and the shield plate 682
is mounted at a lower end of the support shaft 689 so as to oppose
the top surface of the substrate W held on the spin chuck 621.
[0201] A gas supply passage 690 that communicates with the opening
of the shield plate 682 is inserted into the inside of the support
shaft 689. A nitrogen gas (N.sub.2), for example, is supplied into
the gas supply passage 690.
[0202] The arm 688 is connected with a shield plate lifting
mechanism 697 and a shield plate rotation-driving mechanism 698.
The shield plate lifting mechanism 697 lifts and lowers the shield
plate 682 between a position close to the top surface of the
substrate W held on the spin chuck 621 and a position upwardly away
from the spin chuck 621.
[0203] During the drying processing to the substrate W in the
washing processing unit SOAKa in FIG. 10, with the shield plate 682
brought close to the substrate W as shown in FIG. 11, an inert gas
is supplied to clearance between the substrate W and the shield
plate 682 from the gas supply passage 690. This allows the inert
gas to be efficiently supplied from the center of the substrate W
to the peripheral portion thereof, thereby ensuring the removal of
the liquid layer L on the substrate W.
[0204] Although in the above-described embodiment, the substrate W
is subjected to drying processing by spin drying in the washing
processing unit SOAK, the substrate W maybe subjected to drying
processing by other methods such as a reduced pressure drying
method or an air knife drying method.
[0205] Although in the above-described embodiment, the inert gas is
supplied from the nozzle 670 with the liquid layer L of the rinse
liquid being formed, the following method may be applied when the
liquid layer L of the rinse liquid is not formed or the rinse
liquid is not used. That is, the liquid layer of washing liquid is
shaken off once by rotating the substrate W, and an inert gas is
then immediately supplied from the nozzle 670 to thoroughly dry the
substrate W.
[0206] As described above, in the substrate processing apparatus
500 according to the embodiment, the substrate W is subjected to
the washing processing by the washing processing unit SOAK before
the exposure processing by the exposure device 14. During this
washing processing, part of the component of the resist on the
substrate W is eluted in the washing liquid or the rinse liquid,
and washed away. Therefore, even if the substrate W is in contact
with liquid in the exposure device 14, the component of the resist
on the substrate W is hardly eluted in the liquid. This reduces
contamination in the exposure device 14 while preventing the resist
component from remaining on the surface of the substrate W. As a
result, processing defects of the substrate W that may be generated
in the exposure device 14 can be reduced.
[0207] In addition, the washing processing unit SOAK applies the
drying processing to the substrate after the washing processing,
which prevents the attachment of particles in the atmosphere to the
substrate W during the transport of the substrate W after the
washing processing. This prevents contamination of the substrate
W.
[0208] Moreover, the washing/development processing block 12 is
arrange adjacent to the interface block 13. In this case, the
washing processing can be applied to the substrate W immediately
before the exposure processing by the exposure device 14, and the
development processing can be applied to the substrate W
immediately after the exposure processing by the exposure device
14. This prevents the attachment of particles and the like in the
atmosphere to the substrate W during the transport of the substrate
W from the washing/development processing block 12 to the exposure
device 14 and from the exposure device 14 to the
washing/development processing block 12. As a result, processing
defects of the substrate W that may be generated during the
exposure processing and the development processing can be
sufficiently reduced.
[0209] In addition, the washing processing unit SOAK applies the
drying processing to the substrate W by spraying the inert gas to
the substrate W from the center to the peripheral portion thereof
while rotating the substrate W. This reliably removes the washing
liquid and the rinse liquid on the substrate W, which reliably
prevents particles and the like in the atmosphere from attaching to
the washed substrate W. This prevents contamination of the
substrate W reliably while preventing the generation of dry marks
on the surface of the substrate W.
[0210] In addition, the washing liquid and the rinse liquid are
reliably prevented from remaining on the washed substrate W, so
that the resist components are reliably prevented from being eluted
in the washing liquid and the rinse liquid during the transport of
the substrate W from the washing processing unit SOAK to the
exposure device 14. This prevents a defective shape of the resist
film and the contamination inside the exposure device 14.
[0211] As a result of the foregoing, processing defects of the
substrate W can be reliably prevented.
[0212] The interface transport mechanism IFR is next described.
FIG. 12 is a diagram for use in illustrating the configuration and
operation of the interface transport mechanism IFR.
[0213] The configuration of the interface transport mechanism IFR
is first described. As shown in FIG. 12, a movable base 21 in the
interface transport mechanism IFR is threadably mounted to a
screwed shaft 22. The screwed shaft 22 is rotatably supported with
support bases 23 so as to extend in the X direction. One end of the
screwed shaft 22 is provided with a motor M1, which causes the
screwed shaft 22 to rotate and the movable base 21 to horizontally
move in the .+-.X direction.
[0214] A hand support base 24 is mounted on the movable base 21 so
as to rotate in the .+-..theta. direction while moving up and down
in the .+-.Z direction. The hand support base 24 is coupled to a
motor M2 in the movable base 21 through a rotation shaft 25, and
rotated by the motor M2. Two hands H5, H6 for holding the substrate
W in a horizontal attitude are mounted to the hand support base 24
one above the other so as to move forward and backward.
[0215] The operation of the interface transport mechanism IFR is
next described. The operation of the interface transport mechanism
IFR is controlled by the main controller 30 in FIG. 1.
[0216] The interface transport mechanism IFR initially rotates the
hand support base 24 at the position A in FIG. 12 while lifting the
hand support base 24 in the +Z direction, to allow the upper hand
H5 to enter the substrate platform PASS9. When the hand H5 has
received the substrate W in the substrate platform PASS9, the
interface transport mechanism IFR retracts the hand H5 from the
substrate platform PASS9, and lowers the hand support base 24 in
the -Z direction.
[0217] The interface transport mechanism IFR subsequently moves in
the -X direction, and rotates the hand support base 24 at the
position B while allowing the hand H5 to enter a substrate inlet
14a in the exposure device 14 (see FIG. 1). After the hand H5 has
carried the substrate W into the substrate inlet 14a, the interface
transport mechanism IFR retracts the hand H5 from the substrate
inlet 14a.
[0218] Then, the interface transport mechanism IFR allows the lower
hand H6 to enter a substrate outlet 14b in the exposure device 14
(see FIG. 1). When the hand H6 has received the substrate W after
the exposure processing from the substrate outlet 14b, the
interface transport mechanism IFR retracts the hand H6 from the
substrate outlet 14b.
[0219] After this, the interface transport mechanism IFR moves in
the +X direction, and rotates the hand support base 24 at the
position A while lifting the hand support base 24 in the +Z
direction, to allow the hand H6 to enter the substrate platform
PASS10 and transfer the substrate W onto the substrate platform
PASS10.
[0220] If the exposure device 14 is not capable of receiving the
substrate W during the transport of the substrate W from the
substrate platform PASS9 to the exposure device 14, the substrate W
is temporarily stored in the feed buffer unit SBF.
[0221] As described above, in this embodiment, the hand H5 of the
interface transport mechanism IFR is used during the transport of
the substrate W from the substrate platform PASS9 to the exposure
device 14, while the hand H6 is used during the transport of the
substrate W from the exposure device 14 to the substrate platform
PASS10. That is, the hand H6 is used for transporting the substrate
W to which a liquid is attached after the exposure processing,
while the hand H5 is used for transporting the substrate W to which
no liquid is attached. This prevents the liquid on the substrate W
from attaching to the hand H5.
[0222] Moreover, since the hand H6 is arranged below the hand H5,
even if a liquid drops from the hand H6 and the substrate W held
thereon, the liquid will not attach to the hand H5 and the
substrate W held thereon.
[0223] Furthermore, as described above, the fourth central robot
CR4 also employs the lower hand CRH8 during the transport of the
substrate W to which a liquid is attached after the exposure
processing (between the substrate platform PASS10 and the thermal
processing group 121), and employs the upper hand CRH7 during the
transport of the substrate W to which no liquid is attached before
the exposure processing (between the substrate platform PASS7 and
the edge exposure units EEW, and between the edge exposure units
EEW and the substrate platform PASS9). This prevents a liquid from
attaching to the substrate W before the exposure processing also in
the fourth central robot CR4.
[0224] As a result of the foregoing, a liquid is prevented from
attaching to the substrate W before the exposure processing which
prevents the contamination of the substrate W due to the attachment
of particles and the like in the atmosphere. This prevents the
generation of processing defects of the substrate W due to
degradation in the resolution performance and the like in the
exposure device 14.
[0225] Although in this embodiment, the single interface transport
mechanism IFR is used for transporting the substrate W, a plurality
of interface transport mechanisms IFR may also be used for
transporting the substrate W.
[0226] The operation and the configuration of the interface
transport mechanism IFR may also be modified according to the
positions of the substrate inlet 14a and the substrate outlet 14b
of the exposure device 14. For example, when the substrate inlet
14a and the substrate outlet 14b in the exposure device 14 are
positioned opposite to the position A in FIG. 12, the screwed shaft
22 in FIG. 12 may be omitted.
[0227] Furthermore, the numbers of the coating units BARC, RES, the
development processing units DEV, the washing processing unit SOAK,
the heating units HP, and the cooling units CP may suitably be
changed according to the processing speed of each processing
block.
[0228] In addition, a two-fluid nozzle shown in FIG. 13 may also be
used in the washing processing unit SOAK, instead of one or both
the nozzle 650 for washing processing and the nozzle 670 for drying
processing shown in FIG. 4
[0229] FIG. 13 is a longitudinal cross section showing an example
of the internal structure of the two-fluid nozzle 950 for use in
washing and drying processing. The two-fluid nozzle 950 is capable
of selectively discharging a gas, a liquid, and a fluid mixture of
the gas and liquid.
[0230] The two-fluid nozzle 950 in this embodiment is so-called an
external-mix type. The external-mix type two-fluid nozzle 950 shown
in FIG. 13 comprises an inner body portion 311 and an outer body
portion 312. The inner body portion 311 is composed of, e.g.,
quartz, and the outer body portion 312 is composed of a fluororesin
such as PTFE (polytetrafluoroethylene).
[0231] A cylindrical liquid passage 311b is formed along the
central axis of the inner body portion 311. The liquid passage 311b
is provided with the supply pipe 663 shown in FIG. 4 for washing
processing. Washing liquid or rinse liquid supplied from the supply
pipe 663 is thus introduced into the liquid passage 311b.
[0232] A liquid discharge port 311a that communicates with the
liquid passage 311b is formed at a lower end of the inner body
portion 311. The inner body portion 311 is inserted into the outer
body portion 312. Upper ends of the inner body portion 311 and the
outer body portion 312 are joined together, while lower ends
thereof are not joined.
[0233] A cylindrical gas passage 312b is formed between the inner
body portion 311 and the outer body portion 312. A gas discharge
port 312a that communicates with the gas passage 312b is formed at
the lower end of the outer body portion 312. The supply pipe 674
shown in FIG. 4 for drying processing is mounted to a peripheral
wall of the outer body portion 312, so as to communicate with the
gas passage 312b. An inert gas supplied from the supply pipe 674 is
thus introduced into the gas passage 312b.
[0234] The diameter of the gas passage 312b decreases downward in
the vicinity of the gas discharge port 312a. As a result, the
velocity of flow of the inert gas is accelerated, and the inert gas
is discharged from the gas discharge port 312a.
[0235] The washing liquid discharged from the liquid discharge port
311a and the inert gas discharged from the gas discharge port 312a
are mixed outside near the lower end of the two-fluid nozzle 950 to
generate a mist-like fluid mixture that contains fine droplets of
the washing liquid.
[0236] FIGS. 14(a), 14(b), 14(c) are diagrams for use in
illustrating a method of applying washing and drying processing to
the substrate W using the two-fluid nozzle 950 in FIG. 13.
[0237] The substrate W is initially held on the spin chuck 621 by
suction, as shown in FIG. 4, and rotates together with the rotation
of the rotation shaft 625. The rotation speed of the rotation shaft
625 is, e.g., about 500 rpm.
[0238] In this state, as shown in FIG. 14(a), the two-fluid nozzle
950 discharges the mist-like fluid mixture of the washing liquid
and the inert gas onto the top surface of the substrate W while
gradually moving from above the center of the substrate W to above
the peripheral portion thereof. In this way, the fluid mixture is
sprayed onto the entire surface of the substrate W from the
two-fluid nozzle 950 to wash the substrate W.
[0239] Next, the supply of the fluid mixture is stopped, and the
rotation speed of the rotation shaft 625 decreases while the rinse
liquid is discharged from the two-fluid nozzle 950 onto the
substrate W, as shown in FIG. 14(b). The rotation speed of the
rotation shaft 625 is, e.g., about 10 rpm. A liquid layer L of the
rinse liquid is thus formed on the entire surface of the substrate
W. Alternatively, the rotation of the rotation shaft 625 may be
stopped to form the liquid layer L on the entire surface of the
substrate W. When pure water is used as the washing liquid in the
fluid mixture for washing the substrate W, the supply of the rinse
liquid may be omitted.
[0240] After the formation of the liquid layer L, the supply of the
rinse liquid is stopped. Then, the inert gas is discharged onto the
substrate W from the two-fluid nozzle 950, as shown in FIG. 14(c).
This causes the washing liquid on the center of the substrate W to
move to the peripheral portion of the substrate W, leaving the
liquid layer L only on the peripheral portion.
[0241] Then, the rotation speed of the rotation shaft 625
increases. The rotation speed of the rotation shaft 625 is, e.g.,
about 100 rpm. This causes a great centrifugal force acting on the
liquid layer L on the substrate W, allowing the removal of the
liquid layer L on the substrate W. As a result, the substrate W is
dried.
[0242] The two-fluid nozzle 950 may gradually move from above the
center of the substrate W to above the peripheral portion thereof
when removing the liquid layer L on the substrate W. This allows
the inert gas to be sprayed to the entire surface of the substrate
W, which ensures the removal of the liquid layer L on the substrate
W. As a result, the substrate W can be reliably dried.
[0243] As described above, in the two-fluid nozzle in FIG. 13, the
fluid mixture discharged from the two-fluid nozzle 950 contains
fine droplets of the washing liquid. Therefore, even if the surface
of the substrate W has irregularities, any contaminants attached on
the surface of the substrate W can be stripped off. The
contaminants on the surface of the substrate W can thus be reliably
removed. Moreover, even if the films on the substrate W have low
wettability, the fine droplets of the washing liquid strip off the
contaminants on the surface of the substrate W, so that the
contaminants can be reliably removed from the surface of the
substrate W.
[0244] As a result, even if the solvent or the like in a resist is
sublimated in the heating units HP and the sublimates are attached
to the substrate W again when thermal processing is applied to the
substrate W by the heating units HP before the exposure processing,
the sublimates attached to the substrate W can be reliably removed
by the washing processing unit SOAK. It is therefore possible to
reliably prevent the contamination inside the exposure device
14.
[0245] In addition, adjusting the flow rate of the inert gas allows
adjustments to be easily made to the detergency in washing the
substrate W. Thus, when the organic films (i.e., a resist film) on
the substrate W are prone to damage, damage to the organic films on
the substrate W can be prevented by weakening the detergency. Tough
contaminants on the surface of the substrate W can also be removed
reliably by strengthening the detergency. By adjusting the
detergency in this way according to the properties of the organic
films on the substrate W and the degree of contamination, it is
possible to prevent damage to the organic films on the substrate W
and wash the substrate W reliably.
[0246] Moreover, the external-mix type two-fluid nozzle 950
generates the fluid mixture by mixing the washing liquid and the
inert gas outside the two-fluid nozzle 950. The inert gas and the
washing liquid flow through the separate flow passages,
respectively, in the two-fluid nozzle 950. This prevents the
washing liquid from remaining in the gas passage 312b, allowing the
inert gas to be discharged independently from the two-fluid nozzle
950. Also, the rinse liquid can be discharged independently from
the two-fluid nozzle 950 by supplying the rinse liquid from the
supply pipe 663. This allows the fluid mixture, the inert gas, and
the rinse liquid to be selectively discharged from the two-fluid
nozzle 950.
[0247] Furthermore, the use of the two-fluid nozzle 950 obviates
the need to provide nozzles for supplying the washing liquid or the
rinse liquid to the substrate W and for supplying the inert gas to
the substrate W separately. This provides reliable washing and
drying of the substrate W with a simple structure.
[0248] Although, in this embodiment, the two-fluid nozzle 950 is
used to supply the rinse liquid to the substrate W, a separate
nozzle may also be used for supplying the rinse liquid to the
substrate W.
[0249] Moreover, in this embodiment, although the two-fluid nozzle
950 is used to supply the inert gas to the substrate W, a separate
nozzle may also be used for supplying the inert gas to the
substrate W.
[0250] In this embodiment, the anti-reflection film processing
block 10, the resist film processing block 11, and the
washing/development processing block 12 correspond to a processing
section; the interface block 13 corresponds to an interface; the
indexer block 9 corresponds to an indexer; the coating units RES
correspond to a first processing unit; the resist film processing
block 11 corresponds to a first processing block; the washing
processing units SOAK, SOAKa correspond to a second processing
unit; the development processing units DEV correspond to a third
processing unit; the washing/development processing block 12
corresponds to a second processing block; the coating units BARC
correspond to a fourth processing unit; the anti-reflection film
processing block 10 corresponds to a third processing block; and
the resist film corresponds to a photosensitive film.
[0251] The heating units HP and the cooling units CP correspond to
first to third thermal processing units; the second central robot
CR2 corresponds to a first transport unit; the third central robot
CR3 corresponds to a second transport unit; the first central robot
CR1 corresponds to a third transport unit; the fourth central robot
CR4 corresponds to a fourth transport unit; the interface transport
mechanism IFR corresponds to a fifth transport unit; the hand CRH 7
corresponds to a first holder; the hand CRH8 corresponds to a
second holder; the hand H5 corresponds to a third holder; the hand
H6 corresponds to a fourth holder; and the substrate platforms
PASS9, 10 correspond to a platform.
[0252] The spin chuck 621 corresponds to a substrate holding
device; the rotation shaft 625 and the chuck rotation-drive
mechanism 636 correspond to a rotation-drive device; the nozzle 650
for washing processing corresponds to a washing liquid supplier and
a rinse liquid supplier; and the nozzles 670, 770, 870 for drying
processing correspond to an inert gas supplier.
[0253] The two-fluid nozzle 950 corresponds to a fluid nozzle; the
liquid passage 311b corresponds to a liquid flow passage; and the
gas passage 312b corresponds to a gas flow passage.
[0254] Although the present invention has been described and
illustrated in detail, it is clearly understood that the same is by
way of illustration and example only and is not to be taken by way
of limitation, the spirit and scope of the present invention being
limited only by the terms of the appended claims.
* * * * *