U.S. patent application number 11/270945 was filed with the patent office on 2006-07-06 for three dimensional package structure with semiconductor chip embedded in substrate and method for fabricating the same.
Invention is credited to Shih-Ping Hsu.
Application Number | 20060145328 11/270945 |
Document ID | / |
Family ID | 36639475 |
Filed Date | 2006-07-06 |
United States Patent
Application |
20060145328 |
Kind Code |
A1 |
Hsu; Shih-Ping |
July 6, 2006 |
Three dimensional package structure with semiconductor chip
embedded in substrate and method for fabricating the same
Abstract
A three dimensional package structure with semiconductor chip
embedded in substrate and a method for fabricating the same are
proposed. A carrier with at least one cavity is mounted on a first
insulating layer, and at least one semiconductor chip is mounted on
the first insulating layer and received in the cavity of the
carrier. A second insulating layer is formed on the carrier and the
semiconductor chip. By performing a pressing process on both of the
first insulating layer and the second insulating layer, a gap
between the carrier and the semiconductor chip is filled. A circuit
layer may be formed on the second insulating layer and is
electrically connected to the semiconductor chip. Heat dissipating
vias are formed in the first insulating layer and are connected to
the semiconductor chip and a heat dissipating circuit so as to
facilitate dissipation of heat generated from the semiconductor
chip.
Inventors: |
Hsu; Shih-Ping; (Hsin-chu,
TW) |
Correspondence
Address: |
Mr. Joseph A. Sawyer, Jr.;SAWYER LAW GROUP LLP
Embarcadero Corporate Center, Suite 406
2465 East Bayshore Road
Palo Alto
CA
94303
US
|
Family ID: |
36639475 |
Appl. No.: |
11/270945 |
Filed: |
November 10, 2005 |
Current U.S.
Class: |
257/690 ;
257/E23.178 |
Current CPC
Class: |
H01L 2924/01029
20130101; H05K 3/4602 20130101; H01L 2924/15153 20130101; H05K
2201/10674 20130101; H01L 2924/1517 20130101; H01L 2924/15165
20130101; H01L 2924/351 20130101; H01L 24/19 20130101; H01L 24/25
20130101; H01L 2924/15311 20130101; H01L 2224/16225 20130101; H01L
2224/0401 20130101; H01L 2224/2518 20130101; H05K 1/185 20130101;
H01L 2924/01033 20130101; H01L 24/24 20130101; H01L 2224/20
20130101; H01L 2224/24227 20130101; H01L 2924/14 20130101; H01L
2224/211 20130101; H01L 2224/73267 20130101; H01L 23/5389 20130101;
H01L 24/20 20130101; H01L 2224/32225 20130101; H01L 2224/92144
20130101; H01L 2224/04105 20130101; H01L 2224/12105 20130101; H01L
2924/15165 20130101; H01L 2924/15153 20130101; H01L 2224/24227
20130101; H01L 2924/15165 20130101; H01L 2924/1517 20130101; H01L
2924/15153 20130101; H01L 2224/24227 20130101; H01L 2924/1517
20130101; H01L 2924/351 20130101; H01L 2924/00 20130101 |
Class at
Publication: |
257/690 |
International
Class: |
H01L 23/48 20060101
H01L023/48 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 6, 2005 |
TW |
094100325 |
Claims
1. A method for fabricating a three dimensional package structure
with semiconductor chip embedded in substrate, comprising the steps
of: mounting a carrier with at least one cavity on a first
insulating layer; mounting at least one semiconductor chip on the
first insulating layer and in the cavity of the carrier, wherein a
plurality of electrode pads are formed on a surface of the
semiconductor chip; forming a second insulating layer on the
carrier and the semiconductor chip; and performing a pressing
process on both of the first insulating layer and the second
insulating layer.
2. The method of claim 1, wherein the first insulating layer and
the second insulating layer are made of a same material.
3. The method of claim 1, wherein the first insulating layer and
the second insulating layer are made of different materials.
4. The method of claim 1, wherein the first insulating layer is a
semi-cured insulating layer and the second insulating layer is a
colloid insulating layer with fluidity.
5. The method of claim 1, wherein the carrier is one of an
insulating core plate, a metal plate, and a circuit board having
circuits.
6. The method of claim 1, further comprising: forming vias in the
second insulating layer to expose the electrode pads of the
semiconductor chip; and forming a circuit layer on the second
insulating layer and forming conductive blind vias in the vias of
the second insulating layer such that the circuit layer is
electrically connected to the electrode pads of the semiconductor
chip by the conductive blind vias.
7. The method of claim 6, further comprising performing a build-up
process to form a circuit build-up structure on the second
insulating layer and the circuit layer on the second insulating
layer.
8. A method for fabricating a three dimensional package structure
with semiconductor chip embedded in substrate, comprising the steps
of: mounting a carrier with at least one cavity on a first
insulating layer; mounting at least one semiconductor chip on the
first insulating layer and in the cavity of the carrier, wherein
the semiconductor chip has an active surface and a non-active
surface opposed to the active surface; forming a second insulating
layer on the carrier and the semiconductor chip; performing a
pressing process on both of the first insulating layer and the
second insulating layer; and forming a circuit layer on a surface
of the first insulating layer and forming at least one heat
dissipating via in the first insulating layer, wherein the heat
dissipating via is connected to the non-active surface of the
semiconductor chip and the circuit layer.
9. The method of claim 8, wherein the first insulating layer and
the second insulating layer are made of a same material.
10. The method of claim 8, wherein the first insulating layer and
the second insulating layer are made of different materials.
11. The method of claim 8, wherein the first insulating layer is a
semi-cured insulating layer and the second insulating layer is a
colloid insulating layer with fluidity.
12. The method of claim 8, further comprising performing a build-up
process to form a circuit build-up structure on the first
insulating layer and the circuit layer on the first insulating
layer.
13. The method of claim 8, further comprising forming a circuit
layer on the second insulating layer, wherein the circuit layer is
electrically connected to the active surface of the semiconductor
chip.
14. The method of claim 13, wherein the circuit layer on the second
insulating layer is fabricated by the steps comprising: forming
vias in the second insulating layer to expose electrode pads on the
active surface of the semiconductor chip; and forming the circuit
layer on the second insulating layer and forming conductive blind
vias in the vias of the second insulating layer such that the
circuit layer is electrically connected to the electrode pads of
the semiconductor chip by the conductive blind vias.
15. The method of claim 13, wherein the circuit layer on the second
insulating layer is electrically connected to the circuit layer on
the first insulating layer by plated through holes formed in the
carrier.
16. The method of claim 13, further comprising performing a
build-up process to form a circuit build-up structure on the second
insulating layer and the circuit layer on the second insulating
layer.
17. The method of claim 16, further comprising implanting a
plurality of electrical connections pads, a plurality of conductive
elements and a semiconductor component on an outer surface of the
circuit build-up structure.
18. The method of claim 8, wherein the carrier is one of an
insulating core plate, a metal plate, and a circuit board having
circuits.
19. A three dimensional package structure with semiconductor chip
embedded in substrate, comprising: a first insulating layer; a
carrier having at least one cavity and mounted on the first
insulating layer; at least one semiconductor chip having an active
surface and a non-active surface, wherein the semiconductor chip is
mounted via the non-active surface thereof on the first insulating
layer and is received in the cavity of the carrier; a second
insulating layer formed on the carrier and the semiconductor chip,
and filling a gap between the cavity of the carrier and the
semiconductor chip; and a circuit layer formed on the first
insulating layer, and connected to the non-active surface of the
semiconductor chip by at least one heat dissipating via formed in
the first insulating layer.
21. The package structure of claim 19, further comprising a circuit
build-up structure formed on the first insulating layer and the
circuit layer on the first insulating layer.
22. The package structure of claim 19, further comprising a circuit
layer formed on the second insulating layer, and electrically
connected to electrode pads on the active surface of the
semiconductor chip by conductive blind vias formed in the second
insulating layer.
23. The package structure of claim 21, further comprising a circuit
build-up structure formed on the second insulating layer and the
circuit layer on the second insulating layer.
24. The package structure of claim 22, further comprising a
plurality of plated through holes formed in the carrier, for
electrically connecting the circuit layer on the second insulating
layer to the circuit layer on the first insulating layer.
25. The package structure of claim 22, wherein a plurality of
electrical connection pads, a plurality of conductive elements and
a semiconductor component are implanted on an outer surface of the
circuit build-up structure.
26. The package structure of claim 19, wherein the carrier is one
of an insulating core plate, a metal plate, and a circuit board
having circuits.
27. The package structure of claim 19, wherein the first insulating
layer and the second insulating layer are made of a same
material.
28. The package structure of claim 19, wherein the first insulating
layer and the second insulating layer are made of different
materials.
29. The package structure of claim 19, wherein the first insulating
layer is a semi-cured insulating layer and the second insulating
layer is a colloid insulating layer with fluidity.
Description
FIELD OF THE INVENTION
[0001] The present invention relates to three dimensional package
structures with semiconductor chips being embedded in substrates
and methods for fabricating the same, and more particularly, to a
semiconductor package structure for integrating a semiconductor
chip with a carrier, and a method for fabricating the semiconductor
package structure.
BACKGROUND OF THE INVENTION
[0002] Along with development of electronic industry, it has
endeavored to increasingly provide electronic products with
multiple functions and high performances. To satisfy the high
integration and miniaturization requirements for semiconductor
packages, a circuit board for accommodating a plurality of active
and passive components and providing circuit connections has
accordingly been developed from a one-layer board to a multi-layer
board so as to increase an available circuit area on the circuit
board by means of interlayer connection technology to fulfill the
requirement of integrated circuits with high electronic
density.
[0003] However, due to increase in the number of conductive circuit
layers and the component density of the circuit board, heat
generated from operation of a highly integrated semiconductor chip
mounted on the circuit board is greatly increased. If the heat
cannot be dissipated timely, a semiconductor packages comprising
the circuit board and the semiconductor chip may become overheated,
thereby adversely affecting lifetime of the semiconductor chip. At
present, a ball grid array (BGA) package structure has failed to
meet the requirements of electricity and heat dissipation in the
case for high number of pins (over 1500 pins) and high frequency
applications. A flip-chip BGA (FCBGA) package structure may be used
in high pin-number and high frequency products. However, in the
case of using a multi chip flip-chip package, not only the overall
packaging costs are increased but also many technical limitations
exist. Particularly, it is not easy to reduce the package size to
become lighter, thinner and smaller and achieve high functionality
as a flip chip is usually disposed at an outer surface of the
package and relatively space-occupying.
[0004] Thus, there is proposed a solution to the above problem to
directly embed a semiconductor chip in a substrate. As shown in
FIG. 1 of a heat dissipating semiconductor package disclosed by
U.S. Pat. No. 6,709,898, the semiconductor package comprises a heat
spreader 102 having at least one recess 104; a semiconductor chip
114 mounted via its non-active surface in the recess 104 by an
adhesive layer 120; and a circuit structure 122 formed on the heat
spreader 102 and the semiconductor chip 114.
[0005] FIG. 2 is a cross-sectional view of the heat spreader 102.
As shown in FIG. 2, the semiconductor chip 114 is mounted on the
heat spreader 102 and received in the recess 104 that is downwardly
recessed from an upper surface of the heat spreader 102 by a
certain depth.
[0006] Referring to FIG. 3, a first insulating layer 126 made of
such as an insulating resin is formed on the heat spreader 102 and
the semiconductor chip 114 and fills a gap between the
semiconductor chip 114 and the recess 104. However, since the gap
is usually small, it is difficult to fill the insulating resin
therein, or even voids may easily be formed in the gap during the
filling process and cause a popcorn effect
[0007] during a subsequent heating process, thereby resulting in
unstable quality of the entire package structure.
SUMMARY OF THE INVENTION
[0008] In light of the above drawbacks in the conventional
technology, an objective of the present invention is to provide a
three dimensional package structure with semiconductor chip
embedded in substrate and a method for fabricating the same, by
which a semiconductor chip is embedded in a substrate and a
packaging process is performed on a surface of the substrate to
form the three dimensional package structure with high density and
high performance.
[0009] Another objective of the present invention is to provide a
three dimensional package structure with semiconductor chip
embedded in substrate and a method for fabricating the same, which
can uniformly control flatness of an insulating layer formed on a
semiconductor chip and a carrier.
[0010] Still another objective of the present invention is to
provide a three dimensional package structure with semiconductor
chip embedded in substrate and a method for fabricating the same,
which can improve quality of a subsequent circuit fabrication
process and reliability of electrical connections.
[0011] A further objective of the present invention is to provide a
three dimensional package structure with semiconductor chip
embedded in substrate and a method for fabricating the same, which
can improve heat dissipating efficiency of a semiconductor chip in
the package structure.
[0012] In accordance with the above and other objectives, the
present invention proposes a method for fabricating a three
dimensional package structure with semiconductor chip embedded in
substrate, comprising the steps of: mounting a carrier with at
least one cavity on a first insulating layer; mounting at least one
semiconductor chip on the first insulating layer and in the cavity
of the carrier; forming a second insulating layer on the carrier
and the semiconductor chip; and performing a pressing process on
both of the first insulating layer and the second insulating layer
to adhere/secure the first and second insulating layers to the
carrier and allow an insulating resin of the second insulating
layer to fill a gap between the cavity of the carrier and the
semiconductor chip; and performing a heat-curing process to cure
the first and second insulating layers. The first insulating layer
and the second insulating layer can be made of a same material or
different materials.
[0013] Subsequently, a plurality of vias are formed in the second
insulating layer to expose electrode pads of the semiconductor
chip. A circuit layer is formed on the second insulating layer. A
plurality of conductive blind vias are formed in the vias of the
second insulating layer, such that the circuit layer is
electrically connected to the electrode pads of the semiconductor
chip by the conductive blind vias.
[0014] The first insulating layer and the second insulating layer
may be respectively made of a prepeg or film material such as epoxy
resin, polyimide, LCP (liquid crystal polymer), BT (bismaleimide
triazine), ABF (ajinomoto build-up film), PPE (polyphenylene
ether), PTFE (polytetrafluoroethylene) or BCB (benzenecyclobutene).
During the pressing process of the second insulating layer formed
on the carrier, the gap between the semiconductor chip and the
cavity of the carrier is automatically filled with the insulating
resin of the second insulating layer, such that the fabrication
steps and costs are reduced as compared to the conventional
technology, and voids are prevented from being left in the
insulating resin filled in the gap, thereby assuring quality of the
entire package structure. Further during the pressing process, the
insulating resin can be controlled to flow to the gap in a vacuum
state but not applying pressure to the semiconductor chip, making
it easy to control a position of the semiconductor chip. Moreover,
the pressing process is performed in vacuum on both of the first
and second insulating layers to press and flatten surfaces of the
first and second insulating layers, and then the heat-curing
process is carried out to cure the first and second insulating
layers, thereby achieving satisfactory flatness of the first and
second insulating layers and reducing the fabrication steps and
costs.
[0015] After the semiconductor chip has been mounted on the first
insulating layer and the second insulating layer has been formed,
vias can be formed in the first insulating layer and are connected
to a non-active surface of the semiconductor chip having at least
one heat dissipating pad. During forming the conductive blind vias
and the circuit layer in and on the second insulating layer
respectively, at least one circuit layer and at least one heat
dissipating via can be formed on and in the first insulating layer
respectively, such that heat generated by the semiconductor chip
may be dissipated out of the package structure through the heat
dissipating via and the circuit layer.
[0016] A build-up process may be performed to form a multi-layer
circuit build-up structure on the first and second insulating
layers respectively. A plurality of conductive elements can be
implanted on the circuit build-up structure and are used to
electrically connect the three dimensional package structure with
semiconductor chip embedded in substrate to an external device.
Circuit layers of the circuit build-up structure on the first
insulating layer and circuit layers of the circuit build-up
structure on the second insulating layers are separated by the
carrier and are electrically connected to each other by plated
through holes formed in the carrier.
[0017] By the above fabrication method, a three dimensional package
structure with semiconductor chip embedded in substrate according
to the present invention is obtained, which comprises: a first
insulating layer; a carrier having at least one cavity and mounted
on the first insulating layer; at least one semiconductor chip
mounted on the first insulating layer and received in the cavity of
the carrier; a second insulating layer formed on the carrier and
the semiconductor chip; and at least one heat dissipating via
formed in the first insulating layer and connected to a non-active
surface of the semiconductor chip. The package structure further
comprises a circuit structure formed on the first insulating layer
and comprising at least one heat dissipating circuit connected to
the heat dissipating via, such that heat generated by operation of
the semiconductor chip can be dissipated out of the package
structure through the heat dissipating via and the heat dissipating
circuit. The package structure further comprises a circuit
structure formed on the second insulating layer and electrically
connected to the semiconductor chip.
[0018] A circuit build-up structure can be formed on the first and
second insulating layers respectively, wherein circuit layers of
the circuit build-up structure on the first insulating layer and
circuit layers of the circuit build-up structure on the second
insulating layer are electrically connected to each other by plated
through holes formed in the carrier. A plurality of conductive
elements such as solder balls, pins or metal bumps can be mounted
on an outer surface of the circuit build-up structure, and are used
to electrically connect the three dimensional package structure
with semiconductor chip embedded in substrate to an external device
such as a flip-chip semiconductor component, a printed circuit
board, etc.
[0019] Therefore, the package structure in the present invention is
fabricated by integrating chip-packaging and circuit-forming
processes and combining carrier fabrication and package
fabrication, thereby avoiding drawbacks in the conventional
technology. The present invention also improves heat dissipating
performance of the package structure through the use of the heat
dissipating via and the heat dissipating circuit. The
vacuum-pressing process is performed to press the second insulating
layer on the carrier embedded with the semiconductor chip, such
that production yields are increased, costs are reduced, and
quality and reliability of the package structure are both
improved.
BRIEF DESCRIPTION OF THE DRAWINGS
[0020] The present invention can be more fully understood by
reading the following detailed description of the preferred
embodiments, with reference made to the accompanying drawings,
wherein:
[0021] FIG. 1 (PRIOR ART) is a cross-sectional view of a
conventional semiconductor package disclosed in U.S. Pat. No.
6,709,898;
[0022] FIG. 2 (PRIOR ART) is a cross-sectional view showing a heat
spreader receiving a semiconductor chip as disclosed in U.S. Pat.
No. 6,709,898;
[0023] FIG. 3 (PRIOR ART) is a partially cross-sectional view
showing a drawback caused during filling a first insulating layer
in the heat spreader receiving the semiconductor chip as disclosed
in U.S. Pat. No. 6,709,898;
[0024] FIGS. 4A to 4F are cross-sectional views showing steps of a
method for fabricating a package structure according to a first
preferred embodiment of the present invention; and
[0025] FIGS. 5A to 5H are cross-sectional views showing steps of
the method for fabricating a package structure according to a
second preferred embodiment of the present invention.
DETAILED DESCRIPTION OF THE PREFFERED EMBODIMENTS
[0026] FIGS. 4A to 4F are cross-sectional views showing steps of a
method for fabricating a package structure according to a first
preferred embodiment of the present invention. It should be noted
that all the drawings are simplified diagrams for only illustrating
the basic architecture of the present invention. Thus, the drawings
merely show components related to the present invention, and the
shown components are not drawn according to practical numbers,
shapes and size ratios. The numbers, shapes and size ratios of the
components are selected according to design in practical
implementation, and the component layout of the package structure
may be more complex.
[0027] Referring to FIG. 4A, a carrier 400 with a cavity 400a is
provided. The carrier 400 can be an insulating core plate, a metal
plate, or a circuit board having circuits. A thickness of the
carrier 400 may be determined according to a practical
requirement.
[0028] Referring to FIG. 4B, subsequently the carrier 400 is
mounted on a first insulating layer 401. The first insulating layer
401 may be made of a prepeg or film material such as epoxy resin,
polyimide, LCP (liquid crystal polymer), BT (bismaleimide
triazine), ABF (ajinomoto build-up film), PPE (polyphenylene
ether), PTFE (polytetrafluoroethylene), BCB (benzenecyclobutene),
etc.
[0029] Referring to FIG. 4C, a semiconductor chip 43 is mounted via
its non-active surface 430 on the first insulating layer 401 and
received in the cavity 400a of the carrier 400 by a thermally
conductive adhesive layer 42. An active surface 431 of the
semiconductor chip 43 has a plurality of electrode pads 431a
thereon.
[0030] Referring to FIG. 4D, subsequently a second insulating layer
402 is formed on the carrier 400 and the active surface 431 of the
semiconductor chip 43. The second insulating layer 402 and the
first insulating layer 401 may be made of a same material or
different materials. Preferably, the first insulating layer 401 is
a semi-cured insulating layer, and the second insulating layer 402
is a colloid insulating layer with fluidity. Then, a pressing
process such as vacuum-pressing and a heat-curing process are
performed on both of the first insulating layer 401 and the second
insulating layer 402 to press/adhere and cure the first and second
insulating layers 401, 402, so as to obtain flat surfaces of the
first and second insulating layers 401, 402 and allow a gap between
the carrier 400 and the semiconductor chip 43 to be filled with an
insulating resin of the second insulating layer 402.
[0031] Referring to FIG. 4E, by a laser drilling or plasma etching
process, or by exposing and developing processes for a
photosensitive resin, a plurality of vias 402a are formed in the
second insulating layer 402 to expose the electrode pads 431a on
the active surface 431 of the semiconductor chip 43.
[0032] Referring to FIG. 4F, a circuit layer 44 is formed on the
second insulating layer 402, and conductive blind vias 402b are
formed in the vias 402a of the second insulating layer 402 to be
electrically connected to the electrode pads 431a of the
semiconductor chip 43, such that the electrode pads 431a can be
electrically extended outwardly through the conductive blind vias
402b and the circuit layer 44. The conductive blind vias 402b may
be formed by fully or partially filling a general via conductive
layer in the vias 402a of the second insulating layer 402, wherein
the fully filled conductive blind vias 402b can improve electrical
properties and heat dissipating efficiency of the package
structure.
[0033] A circuit build-up structure (not shown) may further be
formed on the first insulating layer 401 and the second insulating
layer 402 respectively. Conductive elements (not shown) such as
solder balls, pins or metal bumps can also be implanted on the
circuit build-up structure so as to allow the semiconductor chip 43
embedded in the carrier 400 to be electrically connected to an
external device. The related fabrication technology is conventional
in the art and not to be further detailed herein.
[0034] FIGS. 5A to 5H are cross-sectional views showing steps of
the method for fabricating a package structure according to a
second preferred embodiment of the present invention. The package
structure and its fabrication method in the second embodiment are
similar to those in the first embodiment, with a primary difference
in that in the second embodiment, at least one heat dissipating via
connected to the non-active surface of the semiconductor chip is
formed in the first insulating layer, wherein the heat dissipating
via is filled with a heat dissipating material, and is connected to
at least one heat dissipating circuit of a circuit structure to be
further connected to the outside of the package structure or
further be connected directly to an external heat dissipating
device to improve heat dissipating efficiency of the package
structure.
[0035] Referring to FIG. 5A, a carrier 500 with a cavity 500a is
provided. The carrier 500 can be an insulating core plate, a metal
plate, or a circuit board having circuits. A thickness of the
carrier 500 may be determined according to a practical
requirement.
[0036] Referring to FIG. 5B, the carrier 500 is mounted on a first
insulating layer 501. The first insulating layer 501 may be made of
a prepeg or film material such as epoxy resin, polyimide, LCP
(liquid crystal polymer), BT (bismaleimide triazine), ABF
(ajinomoto build-up film), PPE (polyphenylene ether), PTFE
(polytetrafluoroethylene), BCB (benzenecyclobutene), etc.
[0037] Referring to FIG. 5C, a semiconductor chip 53 is mounted via
its non-active surface 530 on the first insulating layer 501 and
received in the cavity 500a of the carrier 500 by a thermally
conductive adhesive layer 52, wherein the cavity 500a is
appropriately sized according to the size of the semiconductor chip
53. An active surface 531 of the chip 53 has a plurality of
electrode pads 531a thereon and the non-active surface 530 of the
chip 53 has a plurality of heat dissipating pads 530a thereon.
[0038] Referring to FIG. 5D, subsequently a second insulating layer
502 is formed on the carrier 500 and the active surface 531 of the
semiconductor chip 53. The second insulating layer 502 and the
first insulating layer 501 may be made of a same material or
different materials. Then, a pressing process such as
vacuum-pressing and a heat-curing process are performed on both of
the first insulating layer 501 and the second insulating layer 502
so as to press/adhere and cure the first and second insulating
layers 501, 502 and obtain flat surfaces of the first and second
insulating layers 501, 502.
[0039] Referring to FIG. 5E, a plurality of vias 501a, 502a are
respectively formed in the first insulating layer 501 and the
second insulating layer 502 by a laser drilling or plasma etching
process or by exposing and developing processes for a
photosensitive resin. As a result, the heat dissipating pads 530a
of the semiconductor chip 53 are exposed by the vias 501a of the
first insulating layer 501, and the electrode pads 531a on the
active surface 531 of the semiconductor chip 53 are exposed by the
vias 502a of the second insulating layer 502.
[0040] Referring to FIG. 5F, a circuit layer 55 is formed on the
first insulating layer 501, and a circuit layer 54 is formed on the
second insulating layer 502. Heat dissipating vias 501b are formed
in the vias 501a of the first insulating layer 501 by filling a
heat dissipating material such as Cu in the vias 501a, and the heat
dissipating vias 501b are connected to a heat dissipating circuit
550 of the circuit layer 55, such that the heat dissipating circuit
550 can be extended outwardly. Conductive blind vias 502b are
formed in the vias 502a of the second insulating layer 502 such
that the circuit layer 54 can be electrically connected to the
electrode pads 531a of the semiconductor chip 53 by the conductive
blind vias 502b. The conductive blind vias 502b may be formed by
fully or partly filling a general via conductive layer in the vias
502a of the second insulating layer 502, wherein the fully filled
conductive blind vias 502b can improve electrical properties and
heat dissipating efficiency of the package structure.
[0041] Referring to FIG. 5G, a circuit build-up process can further
be performed on the first insulating layer 501 and the circuit
layer 55 and on the second insulating layer 502 and the circuit
layer 54, so as to form circuit build-up structures 56, 57
respectively on two sides (e.g. upper and lower sides) of the
carrier 500 receiving the semiconductor chip 53, wherein circuits
respectively on the upper and lower sides of the carrier 500 are
electrically connected to each other by plated through holes
59.
[0042] Referring to FIG. 5H, solder mask layers 58a, 58b are
applied on outer surfaces of the circuit build-up structures 56, 57
respectively, and a plurality of openings are formed in the solder
mask layers 58a, 58b to expose electrical connection pads 560, 570
on the outer surfaces of the circuit build-up structures 56, 57
respectively. A plurality of conductive elements 59a, 59b, for
example solder balls, pins or metal bumps, are respectively formed
on the electrical connection pads 560, 570 of the circuit build-up
structures 56, 57, such that for example, an external device such
as a semiconductor component 60 can be mounted on and electrically
connected to the conductive elements 59a, and thus the
semiconductor chip 53 embedded in the carrier 500 can be
electrically connected to the external device by the conductive
elements 59a.
[0043] Accordingly, as shown in FIG. 5H, the package structure
obtained from the above fabrication method in the present invention
includes: a first insulating layer 501; a carrier 500 having at
least one cavity 500a and mounted on the first insulating layer
501; at least one semiconductor chip 53 mounted on the first
insulating layer 501 and received in the cavity 500a of the carrier
500 by a thermally conductive adhesive layer 52; a second
insulating layer 502 formed on the carrier 500 and an active
surface 531 of the semiconductor chip 53 and filling a gap between
the cavity 500a of the carrier 500 and the semiconductor chip 53 by
a pressing process; and at least one circuit layer 54 formed on the
second insulating layer 502, and at least one circuit layer 55
formed on the first insulating layer 501, wherein the circuit layer
54 is electrically connected to electrode pads 531a of the
semiconductor chip 53 by conductive blind vias 502b formed in the
second insulating layer 502, and is electrically connected to the
circuit layer 55 by plated through holes 59 formed in the carrier
500. The circuit layer 55 further includes a heat dissipating
circuit 550 connected to heat dissipating vias 501b formed in the
first insulating layer 501, and the heat dissipating vias 501b are
connected to heat dissipating pads 530a of the semiconductor chip
53. As a result, heat generated from operation of the semiconductor
chip 53 can be dissipated out of the package structure through the
heat dissipating pads 530a of the semiconductor chip 53, the heat
dissipating vias 501b and the heat dissipating circuit 550, thereby
improving heat dissipating performance of the package
structure.
[0044] The package structure further includes a circuit build-up
structure 56 formed on the second insulating layer 502 and the
circuit layer 54. The circuit build-up structure 56 includes at
least one insulating layer, a circuit layer laminated on the
insulating layer, and conductive blind vias penetrating the
insulating layer and electrically connected to the circuit layer. A
plurality of electrical connection pads 560 are formed on the
circuit layer at an outer surface of the circuit build-up structure
56, and a plurality of conductive elements 59a such as solder balls
and conductive bumps can be implanted on the electrical connection
pads 560, such that an external device such as a semiconductor
component 60 can be mounted on the conductive elements 59a so as to
allow the semiconductor chip 53 received in the carrier 500 to be
electrically connected to the external device through the electrode
pads 531a of the semiconductor chip 53, the conductive blind vias
502b, the circuit layer 54 and the conductive elements 59a.
[0045] A circuit build-up layer 57 is further formed on the first
insulating layer 501 and the circuit layer 55, and has a structure
similar to that of the circuit build-up layer 56. The circuit
build-up layer 57 can be electrically connected to the circuit
build-up layer 56 by plated through holes 59 formed in the carrier
500. A plurality of electrical connection pads 570 are formed on a
circuit layer at an outer surface of the circuit build-up structure
57, and a plurality of conductive elements 59b such as solder balls
and conductive bumps can be implanted on the electrical connection
pads 570, such that an external device such as a printed circuit
board (not shown) can be mounted to the conductive elements 59b,
and the semiconductor chip 53 received in the carrier 500 can be
electrically connected to the external device through the circuit
build-up layer 57, the electrical connection pads 570 and the
conductive elements 59b.
[0046] The invention has been described using exemplary preferred
embodiments. However, it is to be understood that the scope of the
invention is not limited to the disclosed embodiments. On the
contrary, it is intended to cover various modifications and similar
arrangement. The scope of the claims therefore should be accorded
the broadest interpretation so as to encompass all such
modifications and similar arrangements.
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