U.S. patent application number 11/270914 was filed with the patent office on 2006-03-16 for multifrequency plasma reactor and method of etching.
Invention is credited to Bradley J. Howard.
Application Number | 20060054596 11/270914 |
Document ID | / |
Family ID | 34104432 |
Filed Date | 2006-03-16 |
United States Patent
Application |
20060054596 |
Kind Code |
A1 |
Howard; Bradley J. |
March 16, 2006 |
Multifrequency plasma reactor and method of etching
Abstract
A multifrequency plasma reactor includes first, second and third
power generators are operably coupled to at least one of an upper
and lower electrode for generating power signals. The plasma
reactor further includes a controller for selectively activating
the power generators according to an activation profile that
results in the formation of a desirable narrow gap via in a
semiconductor wafer. A method of generating a plasma in the reactor
for etching the semiconductor wafer is also described by way of
configuring the power generators according to various activation
configurations during various phases of the etching process.
Inventors: |
Howard; Bradley J.; (Boise,
ID) |
Correspondence
Address: |
TRASK BRITT
P.O. BOX 2550
SALT LAKE CITY
UT
84110
US
|
Family ID: |
34104432 |
Appl. No.: |
11/270914 |
Filed: |
November 10, 2005 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
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10632628 |
Aug 1, 2003 |
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11270914 |
Nov 10, 2005 |
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Current U.S.
Class: |
216/71 ;
156/345.45 |
Current CPC
Class: |
H01J 37/32165 20130101;
H01J 37/32082 20130101 |
Class at
Publication: |
216/071 ;
156/345.45 |
International
Class: |
C23F 1/00 20060101
C23F001/00 |
Claims
1. A method of generating a plasma in a plasma reactor, including a
vacuum chamber containing a gas and first, second and third
electrodes therein operably coupled to respective first, second and
third power generators, the method comprising: configuring the
first, second and third power generators to a first activation
configuration during a first phase of an etch process; and
reconfiguring the first, second and third power generators to at
least a second activation configuration during at least a second
phase of the etch process.
2. The method of claim 1 wherein configuring comprises activating
the first and third power generators and deactivating the second
power generator during the first phase of the etch process.
3. The method of claim 2 wherein reconfiguring comprises activating
the second and third power generators and deactivating the first
power generator during at least the second phase of the etch
process.
4. The method of claim 1 further comprising reconfiguring the
first, second and third power generators to a third activation
configuration during a third phase of the etch process.
5. A method of etching a semiconductor wafer in a plasma reactor,
comprising: generating first, second and third power signals at
upper and lower electrodes respectively coupled to first, second
and third power generators; and individually activating the first,
second and third power generators to control the etching of the
semiconductor wafer.
6. The method of claim 5 wherein individually activating comprises
activating the second and third power generators and deactivating
the first power generator.
7. The method of claim 5 wherein individually activating comprises
activating the first and third power generators and deactivating
the second power generator.
8. The method of claim 5 wherein individually activating comprises
activating the first and second power generators and deactivating
the third power generator.
9. The method of claim 5 wherein individually activating comprises
activating the first, second and third power generators.
10. The method of claim 5 wherein individually activating
comprises: configuring the first, second and third power generators
to a first activation configuration during a first phase of the
etching of the semiconductor wafer; and reconfiguring the first,
second and third power generators to at least a second activation
configuration during at least a second phase of the etching of the
semiconductor wafer.
11. The method of claim 5 wherein individually activating comprises
configuring the first, second and third power generators to a
plurality of activation configurations during a corresponding
plurality of phases of a duty cycle of the etching of the
semiconductor wafer.
12. The method of claim 5 further comprising independently varying
power levels of the first, second and third power generators during
the etching of the semiconductor wafer.
13. The method of claim 12 wherein independently varying further
includes varying the power level of each of the first, second, and
third power generators to produce a desired via profile.
14. A method for etching a semiconductor wafer, comprising:
providing a plasma reactor, including: first, second and third
power generators coupled to upper and lower electrodes; and a
controller for selectively activating the first, second and third
power generators; and controlling the first, second and third power
generators with the controller to control the etching of the
semiconductor wafer.
15. The method of claim 14 wherein controlling comprises
individually activating in a first configuration at least one of
the first, second and third power generators during at least one
phase of the etching of the semiconductor wafer.
16. The method of claim 15 further comprising individually
activating in a second configuration at least one of the first,
second and third power generators during at least another phase of
the etching of the semiconductor wafer.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a divisional of application Ser. No.
10/632,628, filed Aug. 1, 2003, pending.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a plasma reactor and, in
particular, to a multiple frequency plasma reactor in which the
frequencies and the powers associated therewith are individually
controllable.
[0004] 2. State of the Art
[0005] Semiconductor fabrication techniques are used to form
integrated circuits on wafers and frequently include
plasma-assisted processes for etching materials from the
semiconductor wafer. Such plasma etching processes, also known as
"dry etching," are conventionally performed in a plasma reactor
which utilizes radio frequency (RF) power generators to provide
power to one or more electrodes within a vacuum chamber containing
a gas at a predetermined pressure as defined by a specific process.
The plasma reactor also includes a matching network for efficiently
coupling power from the RF power generator to the electrode within
the vacuum chamber.
[0006] Dry etching of a semiconductor wafer occurs within a vacuum
chamber when electric fields between the electrodes within the
vacuum chamber cause electrons present in the gas within the vacuum
chamber to initially collide with gas molecules. With time, the
electrons gain more energy and collide with the gas molecules to
form an excited or ionized species. Eventually, a plasma is formed
in which excitation and recombination of the atoms with electrons
within the plasma are balanced. Highly reactive ions and radical
species result in the plasma and are used to etch materials from
the semiconductor wafer. Electric and magnetic fields within the
vacuum chamber are used to control the etching processes on the
semiconductor wafer.
[0007] One conventional RF-powered plasma reactor is a
single-frequency diode reactor. In a single-frequency diode
reactor, RF energy is conventionally applied to the wafer table on
which the semiconductor wafer is located with an electrode located
above the wafer serving as a grounded electrode. In such an
arrangement, the plasma forms above the wafer and the ions are
accelerated downward, as a result of an electric field formed
between the plasma and the negatively charged wafer, into the wafer
to physically etch materials from the wafer. Different frequencies
presented at the electrode cause different physical phenomena in
the plasma, which may or may not be desirable for a particular
semiconductor process.
[0008] Another conventional RF-powered reactor includes a
dual-frequency reactor which generally permits one RF frequency to
be applied to a first powered electrode located away from the wafer
and which predominantly controls and powers the plasma. A second RF
frequency electrode provides a bias to the wafer to control the
potential (e.g., sheath potential) between the second powered
electrode and the plasma. Such a configuration generally assumes a
capacitively coupled arrangement, which results in the formation of
a self-induced DC bias to the wafer. Dual-frequency systems
generally permit higher ion densities in the plasma, which results
in a higher ion flux into the wafer. Such an approach significantly
affects etch rates as a higher density of ions generally induces a
higher etch rate.
[0009] Yet another conventional RF-powered reactor includes a
dual-frequency reactor which applies two RF frequencies to a
biasing electrode to control the potential between the biasing
electrode and the plasma. Another electrode is located away from
the wafer and is coupled to a reference potential, such as ground.
The two frequencies typically perform separate functions, with one
frequency dominating the ion energy while the other frequency
dominates the plasma energy.
[0010] Though various arrangements for providing power to the
plasma of a plasma reactor have been described, each
heretofore-described configuration includes corresponding
shortcomings. Therefore, there exists a need for an improved
configuration which provides for a flexible solution to the
foregoing problems and deficiencies.
BRIEF SUMMARY OF THE INVENTION
[0011] A multifrequency plasma reactor and method of etching a
semiconductor wafer is provided. In one embodiment, a plasma
reactor includes first, second and third power generators which are
coupled to corresponding upper and lower electrodes for generating
power signals. The plasma reactor further includes a controller for
selectively activating the power generators according to an
activation profile that results in the formation of a desirable
narrow gap via on a semiconductor wafer.
[0012] In another embodiment of the present invention, a plasma
reactor includes a vacuum chamber which includes upper and lower
electrodes therein. First, second and third power generators couple
to the upper and lower electrodes, the power generators selectively
activated by a controller according to a specific activation
profile.
[0013] In yet another embodiment of the present invention, a method
of generating a plasma in a plasma reactor for etching a
semiconductor wafer during an etch process is provided. First,
second and third power generators are configured and operated
according to a first activation configuration during a first phase
of the etch process. The power generators are reconfigured and
operated according to a second activation configuration during a
second phase of the etch process. In a yet further embodiment of
the present invention, an etching method is provided wherein first,
second and third power signals are generated at upper and lower
electrodes with the power generators being individually activated
to control the etching of the semiconductor wafer.
[0014] In yet another embodiment of the present invention, a method
for etching a semiconductor wafer is provided. A plasma reactor is
provided which includes three power generators coupled to upper and
lower electrodes. A controller selectively activates the power
generators and, by controlling the power generators, the etching
process is further controlled.
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS
[0015] In the drawings, which illustrate what is currently
considered to be the best mode for carrying out the invention:
[0016] FIG. 1 is a schematic diagram of a capacitively coupled
plasma reactor utilizing three power generators, in accordance with
an embodiment of the present invention;
[0017] FIGS. 2A and 2B are cross-sectional diagrams illustrating
the formation of narrow gap vias utilizing the plasma reactor
configured according to various embodiments of the present
invention;
[0018] FIGS. 3A-3D illustrate power configurations of the three
power generators, in accordance with embodiments of the present
invention;
[0019] FIG. 4 illustrates a variable duty cycle of the three power
generators of the plasma reactor, in accordance with an embodiment
of the present invention;
[0020] FIG. 5 is a cross-sectional diagram illustrating the
formation of a narrow gap via utilizing the plasma reactor, in
accordance with another embodiment of the present invention;
and
[0021] FIG. 6 is a flow chart of a variable duty cycle
configuration of a plasma reactor, in accordance with an embodiment
of the present invention.
DETAILED DESCRIPTION OF THE INVENTION
[0022] As used herein, "semiconductor" includes all bulk
semiconductor substrates including silicon, silicon-on-insulator
(SOI), silicon-on-sapphire (SOS), silicon-on-glass (SOG), gallium
arsenide (GaAs), and indium phosphide (InP), etc. A
triple-frequency plasma reactor 10 for processing semiconductor
devices is shown at FIG. 1. A first, or upper, power generator 12
is utilized to generate plasma 14 within vacuum chamber 16. Plasma
reactor 10 further includes a second, or lower, high-frequency
power generator 18 and a third, or lower, low-frequency power
generator 20 used to bias the substrate of wafer 22 as located upon
wafer table 24. In the present embodiment, plasma reactor 10 is a
parallel plate reactor having an upper electrode 26 and a lower
electrode 28. Additionally, power generators 12, 18 and 20 are
capacitively coupled via respective capacitors 30-34.
[0023] Upper power generator 12 may be configured to generate a
variably powered RF signal of, by way of example and not
limitation, between 1 and 2 kilowatts of power at a frequency of
approximately 40 to 100 megahertz. Additionally, lower
high-frequency power generator 18 may be configured, by way of
example and not limitation, to generate a variably powered RF
signal of approximately 1 to 2 kilowatts of power and operate at a
frequency range of approximately 13.5 to 60 megahertz. Yet further,
lower low-frequency power generator 20, by way of example and not
limitation, may be configured to generate a variably powered RF
signal of approximately 1 to 2 kilowatts of power at an operational
frequency of approximately 1 to 13.5 megahertz. While specific
frequencies and powers have been identified as examples, other
rules may be applied for identifying frequencies and powers
according to a specific process. Such rules may include guidance
for selecting a frequency for the lower high-frequency power
generator 18, namely that the lower high-frequency power generator
18 operates at a frequency greater than three times the frequency
of the lower low-frequency power generator 20. Another rule may
include that the upper power generator 12 be configured to operate
at a frequency of at least that of the lower high-frequency power
generator 18.
[0024] Additionally, proper operation of a plasma reactor requires
sound grounding techniques. Grounding plates 36 are illustrated and
grounding may further take place through the use of a matchbox (not
shown) or a counter electrode (not shown), the configuration and
implementation of which is appreciated by those of ordinary skill
in the art. Generally, a matchbox matches the impedance with
chamber and the generator. In short, the matchbox matches the
impedance on both sides of the generator in order to minimize
reflected power, which otherwise would result in an ineffective
coupling of power into the plasma.
[0025] The exact frequencies of operation for the power generators
may be selected to correspond to internationally recognized
industrial/scientific/medical (ISM) apparatus frequencies or the
output frequencies of commercially available RF power supplies.
Utilization of a frequency in the VHF signal band for upper power
generator 12 is desirable as frequencies in this range are more
effective than lower frequencies at breaking down etch gases into
reactive radicals and initiating a plasma. Furthermore, the
required pressure within vacuum chamber 16 may be reduced through
the use of such frequencies. Additionally, higher frequencies
beyond the VHF signal band also become more expensive to generate
and to couple into the plasma. The triple-frequency plasma reactor
10 may further include a controller 38 operably and controllably
coupled with power generators 12, 18 and 20. Controller 38 may be
programmable and may control the power generators in both wattage
and frequency and may be further responsive to a configured duty
cycle which enables a reconfiguration of the operation of the power
generators during a semiconductor wafer treatment process.
[0026] While embodiments of the present invention contemplate
various operational parameters on the corresponding power
generators, as defined herein, the term "inactive" or similar
terminology as applied to a power generator includes the
deactivation of the entire power generator and further includes the
reduction in dominating power of a specific power generator.
Therefore, in lieu of disabling or turning off a power generator, a
reduction in power, for example, from one or more kilowatts to one
or more hundreds of watts results in the same overall effect while
allowing some beneficial effects from the continued operation,
albeit at a reduced level, of various power generators.
[0027] FIGS. 2A and 2B are illustrative cross-sectional profiles of
narrow gap vias which may be formed by the triple-frequency plasma
reactor of the present invention. The cross-sectional illustrations
are not to scale and are presented herein for illustrative purposes
only of the various narrow gap profiles attainable through various
combinations of the excitation of power generators 12, 18 and 20 of
FIG. 1. In FIG. 2A, the cross-sectional view as illustrated results
from the configuration of triple-frequency plasma reactor 10 (FIG.
1) according to the configuration or power profile of FIG. 3A. In
FIG. 3A, the generator signal 40 of upper power generator 12 (FIG.
1) is inactive while generator signal 42 of lower high-frequency
power generator 18 (FIG. 1) and generator signal 44 of lower
low-frequency power generator 20 (FIG. 1) are set to active or
defined levels. Such a configuration results in a profile of a
narrow gap via 46 which is directionally etched as defined by a
mask 48 through, for example, a glass or other insulative layer 50
to a contact or target layer 52. It should be noted that narrow gap
via 46 assumes a bowed profile as a result of, for example, polymer
buildup around the throat of the via.
[0028] The configuration or power profile of FIG. 3A provides
processing benefits including good mask or photoresist selectivity
(i.e., the mask endurance through the plasma bombardment is
relatively robust). Another benefit of the present configuration is
that resultant narrow gap vias exhibit a desirable relatively large
opening at the bottoms thereof. The present configuration further
exhibits some less desirable characteristics, namely the bowing
nature that occurs in the upper section of the narrow gap via as a
result of the constriction at the throat portion or upper portion
of the via.
[0029] In FIG. 2B, the cross-sectional view as illustrated results
from the configuration of triple-frequency plasma reactor 10 (FIG.
1) according to the power profile of FIG. 3B. In FIG. 3B, the
generator signal 54 of upper power generator 12 (FIG. 1) is set to
active for a defined level while generator signal 56 of lower
high-frequency power generator 18 (FIG. 1) is inactive.
Furthermore, generator signal 58 of lower low-frequency power
generator 20 (FIG. 1) is set to an active or defined level. Such a
configuration results in a profile of a narrow gap via 60 which is
directionally etched as defined by a mask 62 through, for example,
a glass or other insulative layer 64 to a contact or target layer
66. It should be noted that narrow gap via 60 assumes a tapered
narrowing profile as the depth through insulative layer 64
increases.
[0030] The configuration or power profile of FIG. 3B provides
processing benefits including a good initial profile at the throat
or top of the narrow gap via. The present configuration further
exhibits some less desirable characteristics, namely the
appreciable narrowing of the via as the depth into the via
increases. Therefore, the contact area at the bottom of the via
must be accounted for with the depth and initial opening size at
the top of the via.
[0031] FIG. 3C and FIG. 3D represent other configurations of
excitation of power generators 12, 18 and 20 of the
triple-frequency plasma reactor 10. Specifically, in FIG. 3C, the
generator signal 68 of upper power generator 12 (FIG. 1) is set to
an active or defined level as is the generator signal 70 of lower
high-frequency power generator 18 (FIG. 1). Generator signal 72 of
lower low-frequency power generator 20 (FIG. 1) is inactive.
Referring to FIG. 3D, all frequencies 74, 76 and 78 are set to
active or defined levels for creation of plasma as used in a
specific dry etching semiconductor process.
[0032] FIG. 4 is a power profile of the excitation of the
respective power generators of the triple-frequency plasma reactor
10, in accordance with another embodiment of the present invention.
The previous embodiments have illustrated a static configuration of
the various power generators of the triple-frequency plasma reactor
and the corresponding narrow gap vias resulting therefrom. In the
present embodiment, a dynamic excitation of power generators 12, 18
and 20 is illustrated by way of the formation of duty cycles
associated with each of the power generators. Those of ordinary
skill in the art appreciate that narrow gap vias are typically
formed for the further formation of an electrical connection
through the via to the corresponding target layer, such as a
conductive trace or a pad. Ideally, the formation of a narrow gap
via having sidewalls perpendicular with the target layer and with
an adequate aspect ratio for accommodating a reliable filling of
the narrow gap via is desirable. However, as previously illustrated
in FIGS. 2A and 2B, various profiles of narrow gap vias exhibit
desirable and undesirable profile characteristics.
[0033] Formation of a narrow gap via occurs as the plasma etching
process proceeds over a continuum of time as defined by an etch
rate and a resulting profile. The present embodiment varies the
excitation of the power generators to advantageously formulate the
plasma and the resulting electrical fields to select desirable
etching characteristics over an entire etching process. In FIG. 4,
various duty cycles are defined for the respective frequencies. In
a first phase 80, generator signal 82 of upper power generator 12
(FIG. 1) is set to an active or defined level. Generator signal 84
of lower low-frequency power generator 20 (FIG. 1) is inactive.
Additionally, generator signal 86 is also set to an active or
defined level during first phase 80. The first phase configuration
of power generators 12, 18 and 20 of the triple-frequency plasma
reactor 10 (all of FIG. 1) similarly corresponds to the
configuration as illustrated above with regard to FIG. 3B and
correspondingly with the formation of an acceptable initial opening
of narrow gap via 60 of FIG. 2B. Correspondingly, the narrow gap
via 88 of FIG. 5 illustrates the formation of an initial opening
during first phase 80.
[0034] Returning to FIG. 4, a second phase 90 alters the excitation
of power generators 12, 18 and 20 in an arrangement wherein
generator signal 82 of upper power generator 12 (FIG. 1) is
inactive while generator signal 84 of lower high-frequency power
generator 18 (FIG. 1) and generator signal 86 of lower
low-frequency power generator 20 (FIG. 1) are set to active or
defined levels. Such a configuration results, during second phase
90, of a more widened profile than would otherwise be attainable
through the previous configuration as illustrated with reference to
first phase 80. Such a resulting narrow gap via profile is
illustrated with reference to FIG. 5. As a large aperture is
desirable when mating with a target layer, such as target layer 92
of FIG. 5, a reconfiguration of the excitation of power generators
12, 18 and 20 is desirable. With reference to FIG. 4, a third phase
94 reconfigures the excitation in a manner consistent with the
excitation of first phase 80, namely frequencies 82 and 86 of upper
power generator 12 and lower low-frequency power generator 20 are
set to active or defined levels while generator signal 84 of lower
high-frequency power generator 18 (FIG. 1) is inactive. Such a
configuration of the excitation of the corresponding power
generators enables the formation of a more desirably larger
aperture when coupling with target layer 92.
[0035] FIG. 6 is a flowchart of a variable duty cycle multiple
frequency plasma reactor, in accordance with an embodiment of the
present invention. In FIG. 6, the power generators are configured
100 for a first phase. The status or completion of the first phase
is queried 102 until the completion of the first phase. The power
generators are reconfigured 104 for a subsequent phase with the
duration of that phase queried 106 until its completion. Upon its
completion, the determination of the last phase is queried 108 with
any remaining phases being reconfigured 104 until each phase is
completed.
[0036] While the invention may be susceptible to various
modifications and alternative forms, specific embodiments have been
shown by way of example in the drawings and have been described in
detail herein. However, it should be understood that the invention
is not intended to be limited to the particular forms disclosed.
Rather, the invention includes all modifications, equivalents, and
alternatives falling within the spirit and scope of the invention
as defined by the following appended claims.
* * * * *