U.S. patent application number 11/216263 was filed with the patent office on 2005-12-22 for test mode decoder in a flash memory.
This patent application is currently assigned to Micron Technology, Inc.. Invention is credited to D'Ambrosio, Elio, Naso, Giovanni.
Application Number | 20050280072 11/216263 |
Document ID | / |
Family ID | 11455777 |
Filed Date | 2005-12-22 |
United States Patent
Application |
20050280072 |
Kind Code |
A1 |
Naso, Giovanni ; et
al. |
December 22, 2005 |
Test mode decoder in a flash memory
Abstract
Embodiments of the present invention include an interface
circuit to put an integrated circuit into a test mode and a decoder
to decode one or more commands provided to the integrated circuit.
The decoder includes sub-circuits, and each sub-circuit has a
number of transistors coupled in series. The transistors coupled in
series have control gates coupled to a clock signal or one of
several inverted or non-inverted command signals representing a
command. The control gates in each sub-circuit are coupled such
that a unique pattern of the clock signal and the command signals
will switch on all of the transistors to decode the command. Each
sub-circuit is capable of decoding a single command. The
sub-circuits have ratioed logic with more n-channel transistors
than p-channel transistors. The decoder may be fabricated with a
flexible placement of vias.
Inventors: |
Naso, Giovanni; (Frosinone,
IT) ; D'Ambrosio, Elio; (Avezzano, IT) |
Correspondence
Address: |
Schwegman, Lundberg, Woessner & Klush, P.A.
Attn: Robert E. Mates
P.O. Box 2938
Minneapolis
MN
55402
US
|
Assignee: |
Micron Technology, Inc.
|
Family ID: |
11455777 |
Appl. No.: |
11/216263 |
Filed: |
August 31, 2005 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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11216263 |
Aug 31, 2005 |
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10880894 |
Jun 30, 2004 |
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10880894 |
Jun 30, 2004 |
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10192334 |
Jul 10, 2002 |
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6785162 |
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Current U.S.
Class: |
257/314 ;
257/382; 257/E21.683; 257/E27.081; 438/257; 438/622 |
Current CPC
Class: |
H01L 27/11531 20130101;
H01L 27/11526 20130101; G11C 16/04 20130101; H01L 27/0207 20130101;
G11C 29/46 20130101; G11C 29/14 20130101; H01L 27/105 20130101;
H01L 27/11519 20130101 |
Class at
Publication: |
257/314 ;
438/257; 438/622; 257/382 |
International
Class: |
H01L 021/336; H01L
029/76; H01L 021/4763 |
Foreign Application Data
Date |
Code |
Application Number |
Sep 12, 2001 |
IT |
RM2001A000556 |
Claims
What is claimed is:
1. An integrated circuit fabrication method, comprising: forming a
dielectric layer on a substrate; forming a control gate in the
dielectric layer; forming a metal, first line on the dielectric
material such that the first line is spaced from the control gate
by a dimension; forming a conductive, second line on the dielectric
material such that the second line is spaced from the control gate
by the dimension; and forming a signal connection between the
control gate and the first line.
2. The method of claim 1, wherein forming a dielectric layer on a
substrate comprises forming a silicon dioxide layer on a silicon
substrate.
3. The method of claim 2, wherein forming a control gate in the
dielectric layer includes forming a doped polysilicon gate in the
silicon dioxide layer, forming a first metal layer in the silicon
dioxide layer, and forming a contact between the doped polysilicon
gate and the first metal layer to couple a signal from the first
metal layer to the doped polysilicon gate.
4. The method of claim 3, wherein forming the signal connection
includes forming a via having the dimension and filling the via
with a metal.
5. The method of claim 4, wherein forming the silicon dioxide layer
includes separating the first metal line from the second metal
line.
6. A method of fabricating an integrated circuit, comprising:
forming a dielectric layer on a substrate; forming a control gate
in the dielectric layer; forming a conductive, first line formed on
the dielectric material layer above the control gate and separated
from the control gate by a thickness of the dielectric layer;
forming a conductive, second line on the dielectric material layer
above the control gate and separated from the control gate by the
thickness of the dielectric layer; and forming a signal connection
in a via extending between and in contact with the control gate and
one of the first line and the second line to couple signals between
the control gate and the one of the first line and the second line,
the via having a dimension substantially the same as the thickness
of the dielectric layer.
7. The method of claim 6, wherein forming a dielectric layer on a
substrate comprises forming a silicon dioxide layer on a silicon
substrate.
8. The method of claim 6, wherein forming a control gate comprises:
forming a doped polysilicon gate in the dielectric layer; forming a
metal gate in the dielectric layer; and forming a contact between
the doped polysilicon gate and the metal gate.
9. The method of claim 6, wherein forming the signal connection
includes forming a via in the dielectric layer and inserting a
metal in the via.
10. The method of claim 6, wherein forming a dielectric layer
includes electrically separating the first line and the second
line.
11. The method of claim 6, wherein the dimension of the via is a
height dimension extending vertically from the substrate.
12. The method of claim 11, wherein forming the signal connection
in the via includes selectively placing the via during fabrication
based on the required test commands to be decoded by the integrated
circuit.
13. The method of claim 12, wherein forming the first line
comprises coupling the first line to a first one of an inverted
data line and a non-inverted data line, and wherein forming the
second line comprises coupling the second line to a second one of
an inverted data line and a non-inverted data line.
14. A method of operating a memory device, comprising: storing
control parameters for a memory device in a non-volatile data
storage unit in response to receiving a test mode signal; operating
the memory device using the stored control parameters to adjust the
operation of the memory device, including; writing data to a
selected one memory cell of a plurality of memory cells forming the
memory device by holding a source of the memory cell at a reference
voltage, holding a drain of the memory cell at a power voltage, and
applying a high power voltage to a gate of the memory cell for a
first predetermined time period; reading data stored in the
selected one memory cell by holding the source at the reference
voltage, holding the drain at a low power voltage, and applying the
power voltage to the gate for a second predetermined time period;
erasing data store in the selected one memory cell by holding the
source to the high voltage level for a third predetermined time
period, disconnecting the drain from voltage sources, and holding
the gate to the reference voltage.
15. The method of claim 14, wherein receiving the test mode signal
includes receiving a test mode signal pulse at a voltage level
higher than signal voltages present in the memory device.
16. The method of claim 15, wherein receiving the test mode signal
includes at least one of a reset/power down signal and a write
enable signal.
17. The method of claim 15, wherein receiving the test mode signal
includes detecting the voltage level of a reset/power down signal
with a high voltage detector before receiving the signal at a
command user interface.
18. The method of claim 15, wherein receiving the test mode signal
includes detecting a super voltage level of the reset/power down
signal, detecting a first coincident write enable pulse during the
super voltage level and a first command signal, and detecting a
second coincident enable pulse during the super voltage level and a
second command signal; placing the memory device in a test mode in
response to the super voltage, the first command signal and the
second command signal.
19. The method of claim 18, wherein placing the memory device in
test mode includes generating a test mode clock signal, receiving a
plurality of test mode command signals on a plurality of test mode
input data lines, and decoding the plurality of test mode command
signals.
20. The method of claim 14, wherein the reference voltage level is
approximately ground, the low power voltage is about 1.0 volts, the
power voltage is from about 5 to 7 volts, and the high power
voltage is from 10 to 12 volts.
21. The method of claim 18, wherein the test mode command signals
include at least one of: reference voltage level, low power voltage
level, power voltage level, high power voltage level, the length of
time of the first, second and third predetermined time periods; the
magnitude and duration of programming pulses, read pulses, write
pulses, erase pulses and heal pulses; the word length of
information stored in the plurality of memory cells forming the
memory device; top addressing and bottom addressing the information
stored in the plurality of memory cells forming the memory device;
and the configuration of the plurality of memory cells forming the
memory device.
22. A method of operating a memory device, comprising: storing
control parameters for a memory device in a non-volatile data
storage unit in response to receiving a test mode signal; operating
the memory device using the stored control parameters to adjust the
operation of the memory device; receiving a plurality of test
command signals on a plurality of input data lines after receiving
the test mode signal; decoding the test command signals during a
first pulse of a test mode clock signal; wherein receiving the test
mode signal includes: receiving a super voltage signal on a reset
signal line; receiving at least one write enable signal during a
duration of the super voltage signal on the reset line; receiving a
first command during a first write enable pulse, and decoding the
first command; receiving a second command during a second write
enable pulse, and decoding the second command; and determining if
the first and second command constitute a test mode signal.
23. The method of claim 22, wherein the test mode clock signal is
coincident with at least one of the at least one write enable
signals.
24. The method of claim 22, wherein decoding the test command
signals includes: coupling the test command signals on the
plurality of input data lines after receiving the test mode signal
to a plurality of non-inverting data lines to be non-inverted test
command signals; inverting the test command signals to generate a
plurality of inverted test command signals and coupling to a
plurality of inverted data lines; coupling a voltage source through
a p-channel transistor to a line connected to a plurality of
source/drain diffuision regions of a first n-channel transistor,
seven middle n-channel transistors and a last n-channel transistor,
wherein all the n-channel transistors are coupled in a series of
connected source/drain diffusion regions; coupling the test mode
clock signal to a gate region of the first n-channel transistor;
and coupling a selected one of the inverted or non-inverted test
command signals to a selected one of the seven middle n-channel
transistors and the last n-channel transistor forming a unique
pattern of test command signals that will switch on all of the
seven middle n-channel transistors and the last n-channel
transistor to decode the command signal.
25. The method of claim 24, wherein switching on all of the seven
middle n-channel transistors and the last n-channel transistor to
decode the command signal includes setting one of a latch and a
non-volatile memory cell to a preselected state to indicate that
the test command signal has been decoded.
26. The method of claim 25, wherein the memory device exchanges
signals with at least one of a processor, a memory controller, a
display unit, a user interface, a bus, and an input/output
system.
27. The method of claim 26, wherein the signals exchanged include
at least one of an address signal, a data signal, a chip enable
signal, a write protect signal, a refresh signal, a heal signal, an
erase signal, a program signal, and output enable signal, a write
enable signal, and a status signal.
28. The method of claim 27, wherein the signals are exchanged
between devices embedded on the same integrated circuit chip as the
memory device.
29. The method of claim 24, wherein the device comprises more
n-channel devices than p-channel devices.
Description
RELATED APPLICATIONS
[0001] This application is a Divisional of U.S. application Ser.
No. 10/880,894 filed Jun. 30, 2004; which is a Divisional of U.S.
application Ser. No. 10/192,334 filed Jul. 10, 2002 and issued as
U.S. Pat. No. 6,785,162 on Aug. 31, 2004, which claims priority
under 35 U.S.C. 119 from Italian Application No. RM2001A000556
filed Sep. 12, 2001, all of which applications are incorporated
herein by reference.
FIELD OF THE INVENTION
[0002] The present invention relates generally to memory devices,
and more particularly, to a test mode decoder in a flash memory
device.
BACKGROUND
[0003] Electrically erasable and programmable read-only memory
devices having arrays of what are known as flash cells, also called
flash EEPROMs or flash memory devices, are found in a wide variety
of electrical devices. A flash memory device is typically formed in
an integrated circuit. A conventional flash cell, also called a
floating gate transistor memory cell, is similar to a field effect
transistor, having a channel region between a source and a drain in
a substrate and a control gate over the channel region. In addition
the flash cell has a floating gate between the control gate and the
channel region. The floating gate is separated from the channel
region by a layer of gate oxide, and an inter-poly dielectric
layer,separates the control gate from the floating gate. Both the
control gate and the floating gate are formed of doped polysilicon.
The floating gate is floating or electrically isolated. The flash
memory device has a large number of flash cells in an array where
the control gate of each flash cell is connected to a word line and
the drain is connected to a bit line, the flash cells being
arranged in a grid of word lines and bit lines.
[0004] A flash cell is programmed by applying approximately 10
volts to the control gate, between 5 and 7 volts to the drain, and
grounding the source and the substrate to induce hot electron
injection from the channel region to the floating gate through the
gate oxide. The voltage at the control gate determines the amount
of charge residing on the floating gate after programming. The
charge affects current in the channel region by determining the
voltage that must be applied to the control gate in order to allow
the flash cell to conduct current between the source and the drain.
This voltage is termed the threshold voltage of the flash cell, and
is the physical form of the data stored in the flash cell. As the
charge on the floating gate increases the threshold voltage
increases.
[0005] One type of flash memory device includes an array of
multi-bit or multi-state flash cells. Multi-state flash cells have
the same structure as ordinary flash cells and are capable of
storing multiple bits of data in a single cell. A multi-bit or
multi-state flash cell has multiple distinct threshold voltage
levels over a voltage range. Each distinct threshold voltage level
corresponds to a set of data bits, with the number of bits
representing the amount of data which can be stored in the
multi-state flash cell.
[0006] Data is stored in conventional flash memory devices by
programming flash cells that have been previously erased. A flash
cell is erased by applying approximately -10 volts to the control
gate, 5 volts to the source, grounding the substrate and allowing
the drain to float. In an alternate method of erasure the control
gate is grounded and 12 volts is applied to the source. The
electrons in the floating gate are induced to pass through the gate
oxide to the source by Fowler-Nordheim tunneling such that the
charge in the floating gate is reduced and the threshold voltage of
the flash cell is reduced. Flash cells in an array in a flash
memory device are grouped into blocks, and the cells in each block
are erased together.
[0007] A flash cell is read by applying approximately 5 volts to
the control gate, approximately 1 volt to the drain, and grounding
the source and the substrate. The flash cell is rendered conductive
and current between the source and the drain is sensed to determine
data stored in the flash cell. The current is converted to a
voltage that is compared with one or more reference voltages in a
sense amplifier to determine the state of the flash cell. The
current drawn by a flash cell being read depends on the amount of
charge stored in the floating gate.
[0008] A flash memory device is fabricated as an integrated circuit
and then tested before being operated commercially by a user. Each
flash memory device is slightly different from others of the same
design because of the unique process conditions of its fabrication
and other factors. As a result, each flash memory device has
operating characteristics that are slightly different from the
characteristics of other flash memory devices. For example, the
flash cells of the flash memory device may be programmed at
slightly lower control gate voltages than other flash cells.
[0009] Programmable control parameters have been used to control
the operation of a flash memory device, and the control parameters
can be programmed into data storage units after a flash memory
device has been fabricated. The control parameters have been used
to determine operating parameters for a flash memory device to
compensate for its unique operating characteristics determined
during fabrication, and the use of control parameters improves its
performance. The control parameters are programmed in a test mode
of operation following fabrication. The flash memory device is
subject to a series of tests during the test mode, and the control
parameters are programmed to set operating parameters such as
reference voltage levels and the magnitude and duration of voltage
pulses.
[0010] The control parameters can also be programmed to select
operating modes and a configuration for the flash memory device. A
wide variety of flash memory devices are used in electronic
devices, and different flash memory devices have different
configurations and different operating modes depending on the
application. The control parameters make it possible to fabricate
flash memory devices according to a single design, and then
customize the configuration and operating modes of each individual
flash memory device according to its application. Each flash memory
device can be customized by programming its control parameters
during the test mode.
[0011] A flash memory device is operated in the test mode in
response to specific signals that are decoded by a test mode
decoder circuit in the flash memory device. The purpose of the test
mode decoder circuit is to start the test mode in response to the
appropriate signals, and to prevent the flash memory device from
entering the test mode if the appropriate signals are not present.
The test mode decoder circuit is a safety device that reduces the
likelihood that the control parameters will be changed by accident
or mishap. An unwanted change in the control parameters can disable
the flash memory device in its application.
[0012] The capacity of flash memory devices to store data is
gradually being increased by reducing the size and increasing the
number of flash cells in each integrated circuit. Other components,
including the test mode decoder circuit, must also be reduced in
size in order to improve the capacity of flash memory devices.
There remains a need for a test mode decoder circuit that is
smaller than conventional circuits.
SUMMARY OF THE INVENTION
[0013] The above mentioned and other deficiencies are addressed in
the following detailed description. Embodiments of the present
invention include an interface circuit to put an integrated circuit
into a test mode and a decoder to decode one or more commands
provided to the integrated circuit. The decoder includes
sub-circuits, and each sub-circuit has a number of transistors
coupled in series. The transistors coupled in series have control
gates coupled to a clock signal or one of several inverted or
non-inverted command signals representing a command. The control
gates in each sub-circuit are coupled such that a unique pattern of
the clock signal and the command signals will switch on all of the
transistors to decode the command. Each sub-circuit is capable of
decoding a single command. The sub-circuits have ratioed logic with
more n-channel transistors than p-channel transistors to reduce the
size of the decoder. The decoder may be fabricated with a flexible
placement of vias that gives the decoder the flexibility to be
fabricated for a variety of applications and to decode a variety of
commands.
[0014] Advantages of the present invention will be apparent to one
skilled in the art upon an examination of the detailed
description.
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] FIG. 1 is a block diagram of a flash memory system according
to an embodiment of the present invention.
[0016] FIG. 2 is a cross-sectional view of a flash cell according
to an embodiment of the present invention.
[0017] FIG. 3 is an electrical schematic diagram of a block of
flash cells in the memory system of FIG. 1.
[0018] FIG. 4 is a block diagram of a test mode decoder circuit
according to an embodiment of the present invention.
[0019] FIG. 5 is a timing diagram of signals according to an
embodiment of the present invention.
[0020] FIG. 6 is an electrical schematic diagram of a decoder
circuit according to an embodiment of the present invention.
[0021] FIG. 7A is a block diagram of a block of sub-circuits
according to an embodiment of the present invention.
[0022] FIG. 7B is an electrical schematic diagram of a decoder
circuit according to an embodiment of the present invention.
[0023] FIG. 7C is an electrical schematic diagram of a decoder
circuit according to an embodiment of the present invention.
[0024] FIG. 7D is an electrical schematic diagram of buffer
circuits according to an embodiment of the present invention.
[0025] FIG. 8 is a block diagram of a layout of a decoder circuit
according to an embodiment of the present invention.
[0026] FIG. 9 is a cross-sectional view of a portion of a test mode
decoder circuit according to an embodiment of the present
invention.
[0027] FIG. 10 is a cross-sectional view of a portion of a test
mode decoder circuit according to an embodiment of the present
invention.
[0028] FIG. 11 is a block diagram of an integrated circuit chip
according to an embodiment of the present invention.
[0029] FIG. 12 is block diagram of a compact flash memory card
according to an embodiment of the present invention.
[0030] FIG. 13 is a block diagram of an information-handling system
according to an embodiment of the present invention.
DETAILED DESCRIPTION
[0031] In the following detailed description of exemplary
embodiments of the present invention, reference is made to the
accompanying drawings which form a part hereof, and in which are
shown by way of illustration specific exemplary embodiments in
which the present invention may be practiced. These embodiments are
described in sufficient detail to enable those skilled in the art
to practice the present invention, and it is to be understood that
other embodiments may be utilized and that logical, mechanical,
electrical and other changes may be made without departing from the
spirit or scope of the present invention. The following detailed
description is, therefore, not to be taken in a limiting sense, and
the scope of the present invention is defined only by the
claims.
[0032] In this description, a threshold voltage of a transistor is
the voltage that must be applied to a control gate of the
transistor in order to allow the transistor to conduct current
between a source and a drain. In this description, a transistor or
a flash cell is described as being activated or switched on when it
is rendered conductive by a control gate voltage that exceeds its
threshold voltage, and the transistor or flash cell is described as
being in an inactive state or switched off when the control gate
voltage is below the threshold voltage and the transistor or flash
cell is non-conductive. A digital signal of 1 may also be called a
high signal and a digital signal of 0 may also be called a low
signal. A grouping of lines will be represented symbolically by
<x:y>, while a single line from that group will be
represented as [x].
[0033] The terms wafer and substrate may be used in the following
description and include any structure having an exposed surface
with which to form an integrated circuit (IC) according to
embodiments of the present invention. The term substrate is
understood to include semiconductor wafers. The term substrate is
also used to refer to semiconductor structures during fabrication,
and may include other layers that have been fabricated thereupon.
The term substrate includes doped and undoped semiconductors,
epitaxial semiconductor layers supported by a base semiconductor,
or semiconductor layers supported by an insulator, as well as other
semiconductor structures well known to one skilled in the art. The
term insulator is defined to include any material that is less
electrically conductive than materials generally referred to as
conductors by those skilled in the art.
[0034] The term "horizontal" as used in this application is defined
as a plane substantially parallel to the conventional plane or
surface of a wafer or substrate, regardless of the orientation of
the wafer or substrate. The term "vertical" refers to a direction
substantially perpendicular to the horizonal as defined above.
Prepositions, such as "on," "upper," "side" (as in "sidewall"),
"higher," "lower," "over" and "under" are defined with respect to
the conventional plane or surface being on the top surface of the
wafer or substrate, regardless of the orientation of the wafer or
substrate.
[0035] The term "source/drain" refers generally to the terminals or
diffusion regions of a field effect transistor. A terminal or a
diffusion region may be more specifically described as a "source"
or a "drain" on the basis of a voltage applied to it when the field
effect transistor is in operation.
[0036] P-type conductivity is conductivity associated with holes in
a semiconductor material, and n-type conductivity is conductivity
associated with electrons in a semiconductor material. Throughout
this specification the designation "n+" refers to semiconductor
material that is heavily doped n-type semiconductor material, e.g.,
monocrystalline silicon or polycrystalline silicon. Similarly, the
designation "p+" refers to semiconductor material that is heavily
doped p-type semiconductor material. The designations "n-" and "p-"
refer to lightly doped n and p-type semiconductor materials,
respectively.
[0037] A diffusion region in a substrate described herein according
to embodiments of the present invention may also be called a moat
or a well or a tank. The diffusion region may be an n-type
diffusion region or a p-type diffusion region, and the substrate
may be a silicon substrate. Transistors and other devices described
herein according to embodiments of the present invention may have
moats or wells that may be formed in other moats or wells or tanks
rather than substrates. Such moats or wells or tanks may be
situated with other moats or wells or tanks, or within other moats
or wells or tanks, in a larger substrate. The moats or wells or
tanks may also be situated in a silicon-on-insulator (SOI)
device.
[0038] FIG. 1 is a block diagram of a flash memory system 100
according to an embodiment of the present invention. The memory
system 100 includes a memory controller 105 and a flash memory
integrated circuit (IC) 110. The controller 105 includes a control
device such as a microprocessor to provide interface signals to the
IC 110. The interface signals include address signals provided over
multiple address lines A0-A20 to an address buffer and latch 116,
and data signals communicated over multiple data lines data
<7:0>. The IC 110 has more than 21 address lines, and more
than 8 data lines in alternate embodiments of the present
invention. The data lines data <7:0> comprise 8 separate
conductive lines each capable of transmitting a voltage signal, and
together the data lines data <7:0> may comprise a lower byte
of a data bus. The data lines data <7:0> are coupled to an
input buffer 118 which stores the data signals for transfer to an
input data latch 119 over multiple internal data lines 120. Other
interface signals provided by the controller 105 include a write
enable signal WE* at node 121, a chip enable signal CE* at node
122, a reset/power-down signal RP* at node 123, an output enable
signal OE* at node 124, and a write protect signal WP* at node 125,
all of which are active low signals. The IC 110 provides a status
signal RY/BY* to the controller 105 at node 128 to indicate the
status of an internal state machine 130. The IC 110 also receives a
positive power supply voltage V.sub.CC at node 132, a write/erase
supply or programming voltage V.sub.PP at node 134, and a reference
voltage such as a substrate ground voltage V.sub.SS at node 136
which is approximately 0 Volts. Each of the address lines A0-A20,
data lines data <7:0>, and nodes 121-128 is terminated at a
pin (not shown) in the IC 110 that may be coupled to the controller
105 by a line such as a control line.
[0039] The IC 110 includes an array 138 of floating gate transistor
memory cells or flash cells arranged in 32 flash cell blocks. Each
block in the array 138 contains 64 kilobytes of flash cells. Flash
cells in each block are erased as a group at the same time. A
command execution logic module 140 receives the above-described
interface signals from the controller 105. The module 140 controls
the state machine 130 which controls individual acts necessary for
programming, reading, and erasing the flash cells in the array 138.
More specifically the state machine 130 controls detailed
operations of the IC 110 such as providing write and block erase
timing sequences to the array 138 through an X-interface circuit
145 and a Y-interface circuit 150.
[0040] The Y-interface circuit 150 provides access to individual
flash cells through data lines in the array 138. Data lines in the
Y-interface circuit 150 are connected to a bit line driver circuit
(not shown). The Y-interface circuit 150 includes a Y-decoder
circuit 152, Y-select gates 154, and sense amplifiers and
write/erase bit compare and verify circuits 156. The X-interface
circuit 145 provides access to rows of flash cells through word
lines in the array 138, which are electrically coupled to the
control gates of the flash cells in the array 138. The X-interface
circuit 145 includes decoding and control circuits for erasing the
blocks of flash cells in the array 138. The write/erase bit compare
and verify circuits 156 are coupled to exchange data with the input
data latch 119 over a set of internal data lines 158.
[0041] The IC 110 includes a charge pump circuit 160 to generate an
elevated voltage Vpump for programming, erasing, or reading the
flash cells in the array 138. The pump circuit 160 is coupled to
receive the positive power supply voltage V.sub.CC from the node
132 and provides the voltage Vpump to the X-interface circuit 145,
the Y-decoder circuit 152, and the state machine 130 over a
plurality of lines. In an alternate embodiment of the present
invention, the pump circuit 160 may provide a different elevated
voltage over each of the lines shown in FIG. 1. The state machine
130 controls an address counter 162 which is capable of providing a
sequence of addresses on an internal set of address lines 164
coupled between the address buffer and latch 116, the X-interface
circuit 145, and the Y-decoder circuit 152.
[0042] The IC 110 also includes a status register 170 coupled to
receive signals from the state machine 130, the module 140, and the
pump circuit 160. Bits in the status register 170 indicate the
status of the IC 110, and the status register 170 is read by the
controller 105. The IC 110 also includes an identification register
172 coupled to receive signals from the module 140.
[0043] A cross-sectional view of a flash cell 200 is shown in FIG.
2 according to an embodiment of the present invention. The flash
cell 200 includes an n+-type source S and an n+-type drain D formed
in a p-type silicon substrate 210. The source S and the drain D are
separated by a channel region 212 in the substrate 210. The flash
cell 200 includes a floating gate 215 and a control gate 220, both
formed of doped polysilicon. The floating gate 215 is floating or
electrically isolated. A layer of gate oxide 225 separates the
floating gate 215 from the channel region 212 in the substrate 210.
An inter-poly dielectric layer 235 separates the floating gate 215
from the control gate 220. The substrate 210 may be silicon or
another semiconductor material, or it may be a thin semiconductor
surface layer formed on an underlying insulating portion, such as a
semiconductor-on-insulator (SOI) structure or other thin film
transistor technology. The source S and the drain D are formed by
conventional complementary metal-oxide-semiconductor (CMOS)
processing techniques.
[0044] The flash cell 200 shown in FIG. 2 is an n-channel floating
gate transistor memory cell. In another embodiment of the present
invention, the flash cell 200 may be a p-channel floating gate
transistor memory cell with a p+-type source S and a p+-type drain
D formed in an n-type silicon substrate 210.
[0045] FIG. 3 is an electrical schematic diagram of a block 300 of
flash cells 310A-310S in the array 138 according to an embodiment
of the present invention. Some flash cells in the block 300 are
omitted from FIG. 3 for purposes of clarity. The flash cells 310
are arranged in rows and columns. All of the flash cells 310 in a
particular column have drains D connected to a common bit line BL
and all of the flash cells 310 in a particular row have control
gates connected to a common word line WL. The bit lines BL are
identified as BL0-BLM and the word lines WL are identified as
WL0-WLN. All of the flash cells 310 in the block 300 have sources S
connected to a common source line SL. The remaining flash cells in
the array 138 are arranged into separate blocks having separate
source lines. The flash cells in different blocks are erased
independently to reduce the required erase current. There may be
more or less flash cells 310 in the block 300, and in the array
138, according to alternate embodiments of the present
invention.
[0046] The flash cells 310 are arranged in column pairs, with each
flash cell 310 of the pair sharing a common source S. For example,
a flash cell pair 310J and 310K have a common source S connected to
the source line SL. The drains D of the flash cells 310 are
connected to the bit line BL associated with the column in which
the flash cells 310 are located. For example, the flash cell pair
310J and 310K have their drains D connected to a common bit line
BL1.
[0047] A selected one of the flash cells 310A-310S in the block 300
is programmed by holding the source line SL to the ground voltage
V.sub.SS or zero volts, coupling approximately 5-7 volts to the bit
line BL connected to the flash cell, and applying a high positive
voltage programming pulse of approximately 10 volts to the word
line WL of the flash cell. A selected one of the flash cells
310A-310S in the block 300 is read by holding the source line SL to
the ground voltage V.sub.SS, coupling approximately 1 volt to the
bit line BL connected to the flash cell, applying approximately 5.4
volts to the word line WL of the flash cell, and sensing current in
the flash cell through the bit line BL. The current is sensed by
one of the sense amplifiers 156 that is coupled to the bit line BL.
The sensed current is inversely related to the threshold voltage of
the flash cell. The higher the threshold voltage, the less current
is sensed in the flash cell, and visa versa. The flash cells
310A-310S in the block 300 are erased by holding the word lines
WL0-WLN to the ground voltage V.sub.SS, allowing the bit lines
BL0-BLM to float, and applying a high positive voltage erase pulse
of approximately 12 volts to the sources S through the source line
SL. Charge is removed from the floating gate of the flash cell when
it is erased.
[0048] Control parameters for the IC 110 are programmed by being
stored in non-volatile data storage units in the IC 110 in a test
mode of operation after it has been fabricated. The data storage
units may comprise flash cells or latches, or a combination
thereof. The control parameters determine operating parameters for
the IC 110 such as, for example, supply voltage levels, reference
voltage levels, the magnitude and duration of voltage pulses. More
specifically, control parameters may determine the magnitude and
duration of programming pulses, heal pulses, and erase pulses for
flash cells in the IC 110. The control parameters may select a bus
size for the IC 110 to determine the length of words stored in the
array 138. The control parameters may determine other operating
parameters such as choosing bottom addressing or top addressing for
the IC 110. The control parameters may also determine the
configuration of the IC 100 by enabling selected circuits and/or
disabling other circuits.
[0049] The IC 110 is operated in the test mode in response to
specific signals that are decoded by a test mode decoder 400
circuit in the IC 110. A block diagram of the test mode decoder 400
is shown in FIG. 4 according to an embodiment of the present
invention. The test mode decoder 400 includes a command user
interface (CUI) 410 circuit, an SPT decoder 412 circuit, and an SPT
control logic 414 circuit. The write enable signal WE* and the data
lines data <7:0> are coupled to the CUI 410, and the
reset/power-down signal RP* is coupled to the SPT decoder 412 and
to a high voltage detector circuit 420. The CUI 410 decodes user
commands supplied on the data lines data <7:0> during various
modes of operation of the IC 110. The IC 110 is placed in the test
mode of operation to program control parameters in the IC 110, as
well as for other events. The CUI 410 places the IC 110 in the test
mode of operation in response to the write enable signal WE*, the
reset/power-down signal RP*, and specific commands on the data
lines data <7:0> as will be described with reference to a
timing diagram 500 of signals shown in FIG. 5 according to an
embodiment of the present invention.
[0050] The timing diagram 500 shows time on a horizontal axis 510
and a voltage level of various signals along a vertical axis 520.
The test mode of operation may be entered only when the
reset/power-down signal RP* is at a supervoltage that is higher
than voltages present in the IC 110 during modes of operation other
than the test mode of operation. The level of the reset/power-down
signal RP* is detected by the high voltage detector circuit 420
which couples a signal 422 to the CUI 410 when the reset/power-down
signal RP* reaches or exceeds the supervoltage. In FIG. 5, the
reset/power-down signal RP* is at a supervoltage after time
t.sub.0. In addition, the CUI 410 places the IC 110 in the test
mode of operation only after receiving and decoding two specific
commands, a first command 520 and a second command 522, in a
sequence from the data lines data <7:0>. The first command
520 and the second command 522 are decoded during successive pulses
of the write enable signal WE*. For example, the first command 520
is decoded between t.sub.2 and t.sub.3 and the second command 522
is decoded between t.sub.5 and t.sub.6. If the CUI 410 accepts and
decodes the commands 520 and 522, and the reset/power-down signal
RP* is at the supervoltage, the IC 110 is in the test mode of
operation, and the CUI 410 begins to generate an SPT clock signal
SPT_CLK that is coupled to the SPT decoder 412. The SPT clock
signal SPT_CLK is a high pulse signal that is coincident with
pulses of the write enable signal WE*. A first SPT_CLK pulse is
shown between t.sub.8 and t.sub.9. The SPT clock signal SPT_CLK
pulse can be widened or narrowed by changing the pulse of the write
enable signal WE*. The SPT clock signal SPT_CLK pulse enables the
SPT decoder 412 as will be further described hereinbelow.
[0051] Two sets of data lines are coupled between the CUI 410 and
the SPT decoder 412, the data lines data <7:0> and a second
set of data lines datab <7:0>. The data lines datab
<7:0> carry signals that are the inverse of the signals
carried on the data lines data <7:0>. The CUI 410 inverts
commands on the data lines data <7:0> and sends them to the
SPT decoder 412 on the data lines datab <7:0>. The SPT
decoder 412 uses signals from both of the sets of data lines data
<7:0> and datab <7:0> to decode test commands.
[0052] A test command 540 is received from the data lines data
<7:0> following the second command 522, and is coupled to the
SPT decoder 412 on the data lines data <7:0> along with an
inverted version of the test command 540 on the data lines datab
<7:0>. The test command 540 will initiate a particular
operation on the IC 110, such as programming a control parameter in
the IC 110. The test command 540 is decoded by the SPT decoder 412
during the first SPT_CLK pulse between t.sub.8 and t.sub.9, and the
SPT decoder 412 generates an SPT signal on one of a plurality of
SPT lines that are coupled to the SPT control logic 414. The SPT
control logic 414 generates a series of control signals on a set of
control lines CNTRL that are coupled to portions of the IC 110 to
carry out the test command 540. The test mode continues and
successive test commands are decoded by the SPT decoder 412 on
successive pulses of the SPT clock signal SPT_CLK until the
reset/power-down signal RP* falls below the supervoltage as
detected by the high voltage detector circuit 420, or a command on
the data lines data <7:0> controls the CUI 410 to end the
test mode. At the end of the test mode the CUI 410 ceases to
generate the SPT clock signal SPT_CLK to disable the SPT decoder
412.
[0053] An electrical schematic diagram of an SPT decoder 600
circuit is shown in FIG. 6 according to an embodiment of the
present invention. The SPT decoder 600 may comprise the SPT decoder
412 shown in FIG. 4. The SPT decoder 600 includes three decoding
sub-circuits 610, 612, and 614. Each of the decoding sub-circuits
610, 612, and 614 has a substantially similar structure, and
operates in a substantially similar manner, so only the decoding
sub-circuit 610 will be described in detail for purposes of
brevity.
[0054] A test command on the data lines data <7:0> is decoded
by 8 n-channel transistors 620, 622, 624, 626, 628, 630, 632, and
634 coupled in series in the sub-circuit 610, each of the n-channel
transistors 620-634 having a source/drain diffusion region coupled
to a source/drain diffusion region of an adjacent one of the
n-channel transistors 620-634. The source/drain diffusion regions
of the n-channel transistors 620-634 comprise an electrically
coupled line 640 that is conductive when all of the n-channel
transistors 620-634 are switched on and the coupled line 640
carries a signal representing the decoded test command. The coupled
line 640 is coupled to the supply voltage V.sub.CC through a
p-channel transistor 642 having a control gate coupled to the
ground voltage V.sub.SS 644. The sub-circuit 610 is enabled by an
n-channel transistor 650 having source/drain diffusion regions
coupled between a source/drain diffusion region of the transistor
620 and the ground voltage V.sub.SS 644. A control gate of the
transistor 650 is coupled to receive the SPT clock signal SPT_CLK.
A control gate of each one of the n-channel transistors 620-634 is
connected to one line of the data lines data <7:0> and datab
<7:0>. In alternate embodiments of the present invention,
there may be more or less than 8 data lines carrying the test
command, and more or less than 9 n-channel transistors in the
subcircuits 610, 612, and 614.
[0055] The coupled line 640 carries a voltage signal indicating
whether the sub-circuit 610 has decoded a test command on the data
lines data <7:0>, and this signal is inverted by an inverter
656 and latched by a flip-flop circuit 660 comprising two
cross-coupled NOR gates. The flip-flop circuit 660 receives the
inverted signal on a SET line 661 and is reset from a RESET line
662. The flip-flop circuit 660 has an output signal that is
inverted by an inverter 670 into an SPT signal.
[0056] The sub-circuit 610 decodes a test command on the data lines
data <7:0> in the following manner. Most of the time the SPT
clock signal SPT_CLK is low such that the transistor 650 is
switched off, and the coupled line 640 is charged to a high signal
from the supply voltage V.sub.CC through the transistor 642 that is
switched on by the ground voltage V.sub.SS 644. The high signal on
the coupled line 640 is inverted by the inverter 656 into a low
signal that does not change the state of the flip-flop circuit 660.
However, the transistor 650 is switched on during a high pulse of
the SPT clock signal SPT_CLK (generated as described above) to
couple the n-channel transistors 620-634 to the ground voltage
V.sub.SS 644. Each of the n-channel transistors 620-634 has a
control gate coupled to one of the data lines data <7:0> and
datab <7:0>. The data lines data <7:0> carry a command
represented by a byte of 8 0's and 1's. Each of the n-channel
transistors 620-634 is switched on if its control gate is coupled
to a data line carrying a 1. This transistor can be switched on by
being coupled to a 1 on a line in the data lines data <7:0>.
The transistor can also be switched on by being coupled to a 1 on
one of the data lines datab <7:0> that has been inverted from
a 0 on the corresponding line in the data lines data <7:0>.
The connections of the control gates of the n-channel transistors
620-634 form a pattern that recognizes a specific command on the
data lines data <7:0>. If the pattern of connections of the
control gates of the n-channel transistors 620-634 is such that the
test command on the data lines data <7:0> switches on all of
the n-channel transistors 620-634 during the high pulse of the SPT
clock signal SPT_CLK, then the coupled line 640 is discharged
through the transistor 650 to the ground voltage V.sub.SS 644, and
goes to a low signal. The low signal on the coupled line 640 is
inverted by the inverter 656 to a high signal that sets the output
of the flip-flop circuit 660 to a low signal. The low signal is
inverted by the inverter 670 to a high SPT signal that is coupled
to the SPT control logic 414 to cause the test command to be
executed in the IC 110. At the end of the high pulse of the SPT
clock signal SPT_CLK, the transistor 650 is switched off and the
coupled line 640 is charged again to a high signal from the supply
voltage V.sub.CC through the transistor 642. The high signal is
inverted by the inverter 656 into a low signal that does not change
the state of the flip-flop circuit 660. A test command of 00010001
on the data lines data <7:0> is recognized and decoded by the
sub-circuit 610, and the receipt of the test command is latched in
the flip-flop circuit 660 until the flip-flop circuit 660 is
reset.
[0057] The sub-circuit 612 has an arrangement of n-channel
transistors 672, 674, 676, 678, 680, 682, 684, 686, and 688, a
p-channel transistor 690, and an inverter 692 that is substantially
the same as the arrangement of elements in the sub-circuit 610, and
is similarly coupled to a flip-flop circuit 694 and an inverter
696. However, control gates of the n-channel transistors 674-688
are connected to the data lines data <7:0> and datab
<7:0> in a different pattern such that the sub-circuit 612
will recognize and decode a test command of 00010010 on the data
lines data <7:0> that is different from the test command
recognized by the sub-circuit 610. The sub-circuit 612 will cause
its own high SPT signal to be generated from the inverter 696 when
it recognizes and decodes its own designated test command.
[0058] The sub-circuit 614 has the same arrangement of transistors
and inverters as the sub-circuit 610, but control gates of its
transistors are connected only to the data lines datab <7:0>.
The sub-circuit 614 will generate a high signal to be coupled to an
input of a single NOR gate 697 when a test command of only 0's is
present on the data lines data <7:0>. The test command of 8
0's indicates that the flip-flop circuits 660 and 694 are to be
reset by a high signal on the RESET line 662. The high signal at
the input of the NOR gate 697 causes the NOR gate 697 to generate a
low signal that is inverted by an inverter 698 to a high signal on
the RESET line 662. The high signal on the RESET line 662 causes
the SPT signals generated by the flip-flop circuits 660 and 694 and
the respective inverters 670 and 696 to go low. The high signal on
the RESET line 662 erases the results of the decoded test commands
that may have been previously latched by the flip-flop circuits 660
and 694.
[0059] An inverter 699 in the SPT decoder 600 has an input coupled
to receive the reset/power-down signal RP*. An output of the
inverter 699 is coupled to an input of the NOR gate 697 and remains
low as long as the reset/power-down signal RP* is high, such as at
the supervoltage. However, when the reset/power-down signal RP*
goes low the inverter 699 couples a high signal to the input of the
NOR gate 697 resulting in a low signal at the input of the inverter
698 and a high signal on the RESET line 662 that resets the
flip-flop circuits 660 and 694.
[0060] One of the advantages of the SPT decoder 600 is that the
test commands that arrive in succession, one after the other, on
the data lines data <7:0> are decoded in succession, and the
results of the decoded test commands are stored or latched in the
flip-flop circuits 660 and 694 until they are reset by a high
signal on the RESET line 662. A record of the test commands
received so far is thereby stored and made available to the SPT
control logic 414 in the form of the high SPT signals. The high SPT
signals are available in parallel and concurrently.
[0061] Another advantage of the SPT decoder 600 is that there are
more n-channel transistors than p-channel transistors in each of
the sub-circuits 610, 612, and 614. The sub-circuits 610, 612, and
614 are fabricated with ratioed logic, which is logic that contains
a ratio of n-channel transistors to p-channel transistors. The
ratioed logic takes up a smaller space in an integrated circuit
than logic that contains an equal number of p-channel and n-channel
transistors. The SPT decoder 600 is therefore compact.
[0062] The SPT decoder 600 may contain more than the three
sub-circuits 610, 612, and 614. In fact, the SPT decoder 600 may
contain dozens and even hundreds of sub-circuits similar to the
sub-circuits 610, 612, and 614 in alternate embodiments of the
present invention. There may be as many sub-circuits as there are
available test commands in the SPT decoder 600. Some of the
sub-circuits may not be used as the design of the SPT decoder 600
is modular and employs a flexible placement of vias as will be
described hereinbelow. The flexible placement of vias allow the
design of the SPT decoder 600 to be used in a variety of
applications that require the decoding of different sets of test
commands. The test commands to be decoded are selected by a via
mask that is used in the fabrication of the SPT decoder 600 as will
be described hereinbelow. The unused sub-circuits are also
available during debugging of a device with the SPT decoder 600.
Additional tests or functions can be made available by fabricating
the same design of the SPT decoder 600 with a new via mask that
assigns new test commands to be decoded by the additional
sub-circuits. A block 710 of sub-circuits is shown in FIG. 7A
according to an embodiment of the present invention. The block 710
may include hundreds of sub-circuits. Each of the sub-circuits in
the block 710 is similar to one of the sub-circuits 610, 612, and
614 shown in FIG. 6. Some of the sub-circuits in the block 710 may
have vias selected such that they are used to decode different test
commands, and others of the sub-circuits may not be used.
[0063] An electrical schematic diagram of an SPT decoder 714
circuit is shown in FIG. 7B according to an embodiment of the
present invention. The SPT decoder 714 includes a block 716 of
sub-circuits similar to the block 710 shown in FIG. 7A. A
sub-circuit 718 and a sub-circuit 720 are similar to the
sub-circuits 610, 612, and 614 shown in FIG. 6. A flip-flop circuit
722 is coupled to the sub-circuit 718 and is similar to the
flip-flop circuits 660 and 694 shown in FIG. 6. A NOR gate 726 and
an inverter 728 are coupled to the sub-circuit 720 to generate a
high signal on a RESET line 730. The NOR gate 726 and the inverter
728 are coupled to the sub-circuit 720 in a manner similar to the
coupling of the NOR gate 697 and the inverter 698 shown in FIG. 6.
The sub-circuit 720 causes a high signal on the RESET line 730 by
decoding a test command 11011001 on the data lines data
<7:0>. The high signal on the RESET line 730 resets the
flip-flop circuit 722 and flip-flop circuits in the block 716.
[0064] An electrical schematic diagram of an SPT decoder 734
circuit is shown in FIG. 7C according to an embodiment of the
present invention. The SPT decoder 734 is similar to the SPT
decoder 600 shown in FIG. 6 and has a similar arrangement of
sub-circuits and flip-flop circuits. One difference is that the
bottom-most sub-circuit shown in FIG. 7C will decode a test command
11010111 that results in a high signal on a RESET line that resets
flip-flop circuits in the SPT decoder 734 coupled to the RESET
line.
[0065] An electrical schematic diagram of buffer circuits 740 are
shown in FIG. 7D according to an embodiment of the present
invention. The buffer circuits 740 may be used in any one of the
SPT decoders 600, 714, and 734 described above. The buffer circuits
include inverters and NOR gates.
[0066] A block diagram 800 of a layout of the SPT decoder 600 is
shown in FIG. 8 according to an embodiment of the present
invention. Portions of the SPT decoder 600 that were shown in FIG.
6, such as many of the n-channel transistors, are not shown in FIG.
8 for purposes of brevity. Elements and devices that are common to
FIG. 6 and FIG. 8 have been given the same reference numerals for
purposes of brevity. Several layers of the layout are shown in the
block diagram 800 including n-type and p-type diffusion regions,
doped polysilicon, two layers of metal, contacts, and vias.
Contacts and vias described herein are structures of a conductive
material such as metal that are formed in contact with elements in
an integrated circuit to couple signals between the elements as is
known to those skilled in the art. All of the elements shown in
FIG. 8 are formed in or on a p-type silicon substrate. Symbols for
a contact, a via, and doped polysilicon are shown at the bottom of
FIG. 8 and are followed in FIG. 8 to represent those elements
without specific reference numerals.
[0067] The transistors 620, 634, 642, 650, 672, 674, 688, and 690
shown in FIG. 6 are also shown in the layout of FIG. 8, outlined by
dashed lines. Doped polysilicon is shown as blocks with
cross-hatching, and the control gates of the respective transistors
may comprise a doped polysilicon gate or a doped polysilicon gate
coupled through a contact to a metal gate. The control gates of the
transistors 620 and 674 are coupled by respective vias to a metal
line which forms the data line datab [7]. The control gate of the
transistor 634 is coupled by a via to a metal line which forms the
data line data [0]. The control gate of the transistor 688 is
coupled by a via to a metal line which forms the data line datab
[0]. A break in the middle of FIG. 8 indicates where other
n-channel transistors shown in FIG. 6 would have been located in
the layout of FIG. 8, but have been removed for purposes of
brevity. The n-channel transistors not shown in FIG. 8 for purposes
of brevity have substantially the same structure as the n-channel
transistors shown in FIG. 8.
[0068] Source/drain diffusion regions of the transistors 642 and
690 are formed in two p-type diffusion regions PMOAT 802 and 804
that have been formed in an n-type diffusion region NWELL 806. The
transistors 642 and 690 have a common doped polysilicon gate that
is coupled to the ground voltage V.sub.SS (not shown). The PMOATs
802 and 804 are each formed in two sections on either side of, but
not under, the doped polysilicon gate of the transistors 642 and
690. One side of each of the PMOATs 802 and 804 is coupled through
a contact to a metal line carrying the supply voltage V.sub.CC.
[0069] Adjacent source/drain diffusion regions in the transistors
620, 634, and 650 are formed in a n-type diffusion region NMOAT 810
that is formed in sections between, but not under, the control
gates of the transistors 620, 634, and 650. The NMOAT 810 comprises
the coupled line 640 shown in FIG. 6. Similarly, adjacent
source/drain diffusion regions in the transistors 672, 674, and 688
are formed in a n-type diffusion region NMOAT 812 that is formed in
sections between, but not under, the control gates of the
transistors 672, 674, and 688. A metal line carrying the SPT clock
signal SPT_CLK is coupled by contacts to the control gates of the
transistors 650 and 672, and a metal line carrying the ground
voltage V.sub.SS 644 is coupled by contacts to the NMOATs 810 and
812 in source/drain diffusion regions of the transistors 650 and
672. The NMOAT 810 is coupled to the PMOAT 802 by contacts and a
connecting metal line 820 that has a metal connection 822 to an
inverter (not shown). Similarly, the NMOAT 812 is coupled to the
PMOAT 804 by contacts and a connecting metal line 830 that has a
metal connection 832 to an inverter (not shown). Those skilled in
the art will understand that, in view of the layout of the SPT
decoder 600 shown in FIG. 8, that the SPT decoder 600 is compact
and takes up little space in a substrate.
[0070] The separate layers shown in FIG. 8 are listed as follows.
The NWELL 806, the NMOATs 810 and 812, and the PMOATs 802 and 804
are separate layers. The doped polysilicon gates of the transistors
620, 634, 642, 650, 672, 674, 688, and 690 are a separate layer. A
first metal layer includes the line carrying the SPT clock signal
SPT_CLK, the line carrying the ground voltage V.sub.SS 644, the
line carrying the supply voltage V.sub.CC, the metal gates of the
transistors 620, 634, 674, and 688, the lines 820 and 830, and the
connections 822 and 832. Finally, a second metal layer includes the
line carrying the ground voltage V.sub.SS 644, the line carrying
the supply voltage V.sub.CC, and the data lines data [7], datab
[7], data [0], and datab [0].
[0071] The control gates of the transistors 620, 634, 674, and 688
can each be connected to one of the data lines data <7:0> or
one of the data lines datab <7:0> by using a selected
placement of vias. The selection of the location of vias during the
fabrication of the SPT decoder 600 determines which test commands
will be decoded by the sub-circuits 610 and 612 in the SPT decoder
600, and also determines which sub-circuit, 610 or 612, will decode
each test command. This is because the test command recognized and
decoded by a sub-circuit to start the generation of an SPT signal
is determined by the pattern of connections of the control gates of
its n-channel transistors with the data lines data <7:0> and
datab <7:0>, as described above.
[0072] A cross-sectional view 1000 of a portion of the SPT decoder
600 is shown in FIG. 9 according to an embodiment of the present
invention. The cross-sectional view 1000 is taken along line 9-9
shown in FIG. 8. Symbols for metal, a via, doped polysilicon, and a
contact are shown at the bottom of FIG. 9 and are followed in FIG.
9 to represent those elements without specific reference numerals.
The SPT decoder 600 is fabricated with multiple layers on a silicon
substrate 1010. The layers shown in FIG. 9 are listed as follows.
Layers of silicon dioxide (SiO.sub.2) 1020 on the substrate 1010
are placed around a doped polysilicon gate 1040 of the transistor
634 shown in FIG. 8. A metal gate 1050 of the transistor 634 is
part of a first metal layer, and is coupled to the doped
polysilicon gate 1040 through a contact 1052. A first metal line
1060 forming the data line data [0] and a second metal line 1080
forming the data line datab [0] are part of a second metal layer. A
via 1082 is placed in contact with the first metal line 1060 and
the metal gate 1050 of the transistor 634 to couple them such that
the transistor 634 is switched on or off by a signal on the data
line data [0]. The second metal line 1080 is separated from the
metal gate 1050 by the layers of silicon dioxide (SiO.sub.2) 1020.
The removal of the silicon dioxide (SiO.sub.2) 1020 and the
fabrication of the via 1082 with metal is carried out in a manner
known to those skilled in the art. A layer of silicon dioxide
(SiO.sub.2) 1090 protects the second metal layer and separates the
first metal line 1060 from the second metal line 1080.
[0073] A cross-sectional view 1096 of a portion of the SPT decoder
600 is shown in FIG. 10 according to another embodiment of the
present invention. The cross-sectional view 1096 is taken along
line 9-9 shown in FIG. 8, and is similar to the cross-sectional
view 1000 shown in FIG. 9. Similar elements have been given the
same reference numerals, and will not further described herein for
purposes of brevity. The cross-sectional view 1096 of FIG. 10 is
modified in that the via 1082 is placed in contact with the second
metal line 1080 and the metal gate 1050 of the transistor 634 to
couple them such that the transistor 634 is switched on or off by a
signal on the data line datab [0]. The first metal line 1060 is
separated from the metal gate 1050 by the layers of silicon dioxide
(SiO.sub.2) 1020.
[0074] The first metal line 1060 and the second metal line 1080 are
located in proximity to the metal gate 1050 such that the via 1082
may be formed between the first metal line 1060 and the metal gate
1050 as shown in FIG. 9, or between the second-metal line 1080 and
the metal gate 1050 as shown in FIG. 10. More specifically, both
the first metal line 1060 and the second metal line 1080 are
separated from the metal gate 1050 by a thickness of the silicon
dioxide (SiO.sub.2) 1020 that is substantially the same as a
dimension of the via 1082 to allow the formation of the via 1082
between the first metal line 1060 and the metal gate 1050 as shown
in FIG. 9, or between the second metal line 1080 and the metal gate
1050 as shown in FIG. 10. The via 1082 is selectively placed to
couple the metal gate 1050 to either the data line data [0] or the
data line datab [0]. This selection is made during a fabrication of
the SPT decoder 600. With respect to the entire SPT decoder 600,
FIGS. 8, 9, and 10 illustrate a flexible placement of vias in the
layout of the SPT decoder 600. Corresponding pairs of data lines
data <7:0> and datab <7:0> are located in proximity to
control gates of multiple n-channel transistors in the SPT decoder
600 to allow for a flexible placement of vias between the data
lines data <7:0> and datab <7:0>.
[0075] The flexible placement of vias in the layout of the SPT
decoder 600 provides for flexibility in several ways. Different
systems may use different test commands to carry out the same tests
and procedures on the IC 110. The flexible placement of vias permit
the SPT decoder 600 to be customized during fabrication to respond
to the test commands used by the system it will be coupled to. The
flexible placement of vias make the SPT decoder 600 useful in a
library of semiconductor circuits that are available for use in a
wide range of systems. A circuit designer may select the SPT
decoder 600 and choose the location of the vias to make it a useful
part of a new system without having to go to the time and expense
of designing a new decoder circuit from the ground up. The flexible
placement of vias allow the use of fewer sub-circuits in the SPT
decoder 600 because they can be modified to recognize different
test commands. Without the flexible placement of vias, more
sub-circuits would be needed to accommodate a wider range of
potential test commands. This advantage contributes to the small,
compact size of the SPT decoder 600. Finally, the flexible
placement of vias allow for the addition of new test commands to
trigger new, additional tests or other events if a test of the SPT
decoder 600 reveals the need for such additional measures. This
situation occurs during "debugging" of the SPT decoder 600 in a
system.
[0076] An integrated circuit chip 1100 according to an embodiment
of the present invention is shown in FIG. 11. The chip 1100
includes an embedded flash memory 1110 such as the flash memory
integrated circuit (IC) 110, and may include the test mode decoder
400 and one or more of the SPT decoders 600, 714, and 734 according
to the embodiments of the present invention described above. The
embedded flash memory 1110 shares the chip 1100 with another
integrated circuit 1120 such as a processor, or possibly several
other integrated circuits. The processor may also include the test
mode decoder 400 and one or more of the SPT decoders 600, 714, and
734. The embedded flash memory 1110 and the integrated circuit 1120
are coupled together by a suitable communication line or bus
1130.
[0077] One skilled in the art having the benefit of this
description will understand that more than one flash memory
integrated circuit (IC) 110 according to the embodiments of the
present invention described above may be included in various
package configurations. For example, a compact flash memory card
1200 according to an embodiment of the present invention is shown
in FIG. 12. The card 1200 includes a plurality of flash memory
integrated circuits 1210(1)-1210(X) each of which are similar to
the flash memory integrated circuit (IC) 110 shown in FIG. 1. The
card 1200 may be a single integrated circuit in which the flash
memory integrated circuits 1210(1)-1210(X) are embedded.
[0078] FIG. 13 is a block diagram of an information-handling system
1300 according to an embodiment of the present invention. The
information-handling system 1300 includes a memory system 1308, a
processor 1310, a display unit 1320, and an input/output (I/O)
subsystem 1330. The processor 1310 may be, for example, a
microprocessor. The memory system 1308 is comprised of the flash
memory integrated circuit (IC) 110. The processor 1310 and/or the
memory system 1308 may include the test mode decoder 400 and one or
more of the SPT decoders 600, 714, and 734 according to the
embodiments of the present invention described above. The I/O
subsystem 1330 may be a keyboard or other device to allow the user
to communicate with the system 1300. The processor 1310 and the
memory system 1308 may be embedded on a single integrated circuit
chip such as the chip 1100 shown in FIG. 11. The processor 1310,
the display unit 1320, the I/O subsystem 1330, and the memory
system 1308 are coupled together by a suitable communication line
or bus 1340.
[0079] In various embodiments of the present invention, the
information-handling system 1300 is a computer system (such as, for
example, a video game, a hand-held calculator, a television set-top
box, a fixed-screen telephone, a smart mobile phone, a personal
digital assistant (PDA), a network computer (NC), a hand-held
computer, a personal computer, or a multiprocessor supercomputer),
an information appliance (such as, for example, a cellular
telephone, a pager, or a daily planner or organizer, or any
wireless device), an information component (such as, for example, a
magnetic disk drive or telecommunications modem), or other
appliance (such as, for example, a television, a hearing aid,
washing machine or microwave oven having an electronic
controller).
[0080] Although specific embodiments have been illustrated and
described herein, it will be appreciated by those skilled in the
art having the benefit of this description that any equivalent
arrangement may be substituted for the specific embodiments shown.
For example, those skilled in the art having the benefit of this
description will understand that the test mode decoder 400 and the
SPT decoders 600, 714, and 734 according to the embodiments of the
present invention described above may be used in any type of
circuit to put that circuit into a special mode and to decode
special commands to be used by that circuit. For example, a memory
device or a processor may include the test mode decoder 400 and one
or more of the SPT decoders 600, 714, and 734 according to the
embodiments of the present invention described above. The present
invention is therefore limited only by the claims and equivalents
thereof.
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