U.S. patent application number 10/863806 was filed with the patent office on 2005-12-15 for alignment marker and lithographic apparatus and device manufacturing method using the same.
This patent application is currently assigned to ASML Netherlands B.V.. Invention is credited to Bruinsma, Anastasius Jacobus Anicetus, Heerens, Gert-Jan, Klinkhamer, Jacob Fredrik Friso, Marinus Van De Ven, Bastiaan Lambertus Wilhelmus, Van Mierlo, Hubert Adriaan, Vliegenthart, Willem Arthur.
Application Number | 20050275841 10/863806 |
Document ID | / |
Family ID | 35460173 |
Filed Date | 2005-12-15 |
United States Patent
Application |
20050275841 |
Kind Code |
A1 |
Heerens, Gert-Jan ; et
al. |
December 15, 2005 |
Alignment marker and lithographic apparatus and device
manufacturing method using the same
Abstract
An apparatus includes a first support structure configured to
support an element that has an alignment marker provided with at
least one height difference. The apparatus also includes an
alignment sensor comprising a light source that is configured to
provide a light beam that illuminates the alignment marker; and at
least one detector configured to detect the at least one height
difference of the alignment marker by analyzing the light beam
reflected by the alignment marker. Such an apparatus may be used to
align of the element with respect to the first support
structure.
Inventors: |
Heerens, Gert-Jan;
(Schoonhoven, NL) ; Bruinsma, Anastasius Jacobus
Anicetus; (Delft, NL) ; Klinkhamer, Jacob Fredrik
Friso; (Delft, NL) ; Marinus Van De Ven, Bastiaan
Lambertus Wilhelmus; ('s-Hertogenbosch, NL) ; Van
Mierlo, Hubert Adriaan; (Maassluis, NL) ;
Vliegenthart, Willem Arthur; (Bunnik, NL) |
Correspondence
Address: |
PILLSBURY WINTHROP SHAW PITTMAN, LLP
P.O. BOX 10500
MCLEAN
VA
22102
US
|
Assignee: |
ASML Netherlands B.V.
Veldhoven
NL
|
Family ID: |
35460173 |
Appl. No.: |
10/863806 |
Filed: |
June 9, 2004 |
Current U.S.
Class: |
356/400 |
Current CPC
Class: |
G03F 9/7076 20130101;
G03F 9/7088 20130101; G03F 9/7065 20130101 |
Class at
Publication: |
356/400 |
International
Class: |
G01B 011/00 |
Claims
What is claimed is:
1. An apparatus comprising: a first support structure configured to
support an element, said element including an alignment marker
provided with at least one height difference; and an alignment
sensor comprising: a light source configured to provide a light
beam that illuminates the alignment marker; and at least one
detector arranged to receive a reflection of the light beam from
said alignment marker and configured to detect the at least one
height difference of the alignment marker, based on the reflection,
to enable an alignment of said element.
2. The apparatus according to claim 1, wherein said apparatus is
configured to align said element with respect to said first support
structure based on the at least one height difference.
3. The apparatus according to claim 1, wherein the alignment sensor
comprises imaging optics configured to control at least one of the
group consisting of a trajectory of said reflection and a
characteristic of said reflection.
4. An apparatus according to claim 3, wherein the imaging optics
and the at least one detector are configured to align said element
by at least one of the group consisting of diffraction, scattering,
diffuse reflection, and phase-contrast.
5. The apparatus according to claim 1, wherein the element
comprises a patterning structure configured to receive a beam of
radiation and to produce a patterned beam having a pattern in its
cross-section, said apparatus comprising: an illumination system
configured to provide the beam of radiation; a second support
structure configured to support a substrate; and a projection
system configured to project the patterned beam onto a target
portion of the substrate.
6. An apparatus according to claim 5, wherein the beam of radiation
comprises EUV radiation, and the light beam has a wavelength in a
range of about four hundred (400) to fifteen hundred (1500)
nanometers.
7. An apparatus according to claim 5, wherein the alignment sensor
is independent of the illumination system.
8. The apparatus according to claim 5, wherein the patterning
structure comprises a reflective patterning structure and the
alignment marker comprises a reflective marker.
9. The apparatus according to claim 8, wherein the reflective
marker comprises a reflecting surface upon which, in at least one
area, a radiation-absorbing layer is deposited, the
radiation-absorbing layer introducing at least one height
difference and being arranged to absorb radiation with a wavelength
corresponding to a wavelength of the beam of radiation provided by
the illumination system.
10. An apparatus according to claim 9, wherein the
radiation-absorbing layer has a thickness of about 50 (fifty) to
500 (five hundred) nanometers.
11. An apparatus according to claim 9, wherein the
radiation-absorbing layer comprises a material selected from the
group consisting of Cr, TaN, TaSiN, TiN and SiMo.
12. An apparatus according to claim 1, wherein the alignment marker
comprises at least one marker selected from the group consisting of
a single edge marker, a grating, and a grid.
13. An apparatus according to claim 1, wherein the alignment sensor
is provided within the apparatus to enable in-situ alignment.
14. A semiconductor device manufactured using the apparatus of
claim 1.
15. A device manufacturing method comprising: patterning a beam of
radiation with a patterning structure according to a desired
pattern, said patterning structure being supported by a support
structure; projecting the patterned beam of radiation onto a target
portion of a substrate; and prior to said patterning, aligning the
patterning structure with respect to the support structure, wherein
said aligning comprises: directing a light beam onto an alignment
marker disposed on the patterning structure, said alignment marker
including at least one height difference, and detecting the at
least one height difference of the marker with at least one
detector.
16. A semiconductor device manufactured according to the method of
claim 15.
17. A patterning structure comprising: a pattern configured to
pattern a beam of radiation within its cross-section; and an
alignment marker; wherein the pattern and the alignment marker are
manufactured in parallel using the same manufacturing process.
18. A patterning structure according to claim 17, wherein the
marker is configured to be illuminated by a light beam and wherein
the beam of radiation and the light beam have different
wavelengths.
19. A patterning structure according to claim 18, wherein the beam
of radiation is EUV radiation, and the light beam has a wavelength
in a range of 400 (four hundred) to 1500 (fifteen hundred)
nanometers.
20. A method of aligning an element comprising an alignment marker,
the alignment marker being provided with at least one height
difference, the method comprising: illuminating said alignment
marker with a light beam; and detecting the at least one height
difference of the alignment marker based on a reflection of the
light beam from said alignment marker.
21. An apparatus according to claim 1, wherein the at least one
detector includes at least one of the group consisting of a
position-sensitive detector, a quad cell, and a camera having a
charge-coupled device.
22. An apparatus configured to align a patterning structure with
respect to a support structure on which the patterning structure is
disposed, the apparatus comprising: a light source configured to
direct a light beam onto at least one alignment marker arranged on
said patterning structure, said light beam having an angle of
incidence and a principal angle of reflectance; and a detector
configured to receive a reflection of a portion of the light beam
by said at least one alignment marker at an angle other than the
principal angle of reflectance.
23. The apparatus according to claim 22, wherein said detector is
configured to detect at least one height difference within said at
least one alignment marker based on the reflection of a portion of
the light beam.
24. The apparatus according to claim 22, said apparatus comprising
an imaging system configured to project the reflection of a portion
of the light beam onto said detector.
25. The apparatus according to claim 22, wherein said at least one
height difference includes an elevation formed by said at least one
alignment marker on said patterning structure.
Description
FIELD OF THE INVENTION
[0001] The present invention relates to lithographic apparatus and
methods.
BACKGROUND
[0002] A lithographic apparatus is a machine that applies a desired
pattern onto a target portion of a substrate. Lithographic
apparatus can be used, for example, in the manufacture of
integrated circuits (ICs). In that circumstance, a patterning
structure, such as a mask, may be used to generate a circuit
pattern corresponding to an individual layer of the IC, and this
pattern can be imaged onto a target portion (e.g. including part
of, one or several dies) on a substrate (e.g. a silicon wafer) that
has a layer of radiation-sensitive material (resist). In general, a
single substrate will contain a network of adjacent target portions
that are successively exposed. Known lithographic apparatus include
so-called steppers, in which each target portion is irradiated by
exposing an entire pattern onto the target portion at once, and
so-called scanners, in which each target portion is irradiated by
scanning the pattern through the projection beam in a given
direction (the "scanning"-direction) while synchronously scanning
the substrate parallel or anti-parallel to this direction.
[0003] The terms "radiation" and "beam" used herein encompass all
types of electromagnetic radiation, including ultraviolet (UV)
radiation (e.g. having a wavelength of 365, 248, 193, 157 or 126
nm) and extreme ultra-violet (EUV) radiation (e.g. having a
wavelength in the range of 5-20 nm), as well as particle beams,
such as ion beams or electron beams.
[0004] The term "projection system" used herein should be broadly
interpreted as encompassing various types of projection system,
including refractive optical systems, reflective optical systems,
and catadioptric optical systems, as appropriate, for example, for
the exposure radiation being used, or for other factors such as the
use of an immersion fluid or the use of a vacuum. Any use of the
term "lens" in such context herein may be considered as synonymous
with the more general term "projection system".
[0005] The illumination system may also encompass various types of
optical components, including refractive, reflective, and
catadioptric optical components for directing, shaping, or
controlling the projection beam of radiation, and such components
may also be referred to below, collectively or singularly, as a
"lens".
[0006] The term "patterning structure" used herein should be
broadly interpreted as referring to a structure that can be used to
impart a projection beam with a pattern in its cross-section such
as to create a pattern in a target portion of the substrate. It
should be noted that the pattern imparted to the projection beam
may not exactly correspond to the desired pattern in the target
portion of the substrate. Generally, the pattern imparted to the
projection beam will correspond to a particular functional layer in
a device being created in the target portion, such as an integrated
circuit.
[0007] A patterning structure may be transmissive or reflective.
However, beneath a certain wavelength the use of a transmissive
patterning structure is no longer possible due to the lack of
suitable materials that transmit illumination of that particular
wavelength. In a lithographic apparatus that applies that kind of
illumination, like EUV radiation, the use of a reflective
patterning structure is required.
[0008] Generally, a reflective patterning structure includes a
substantially flat structure provided with a reflective surface. On
the surface of the structure a radiation-absorbing layer is
deposited and consecutively patterned. The radiation-absorbing
layer, which typically has a thickness of about 50-500 nm, absorbs
the illumination. The difference between the reflection
coefficients of the reflective surface and the radiation-absorbing
layer enables the transfer of the pattern from the patterning
structure to the target portion on a substrate.
[0009] Examples of patterning structures include masks and
programmable mirror arrays. Masks are well known in lithography,
and include mask types such as binary, alternating phase-shift, and
attenuated phase-shift, as well as various hybrid mask types. An
example of a programmable mirror array employs a matrix arrangement
of small mirrors, each of which can be individually tilted so as to
reflect an incoming radiation beam in different directions; in this
manner, the reflected beam is patterned.
[0010] A support structure supports, i.e. bares the weight of, the
patterning structure. It holds the patterning structure in a way
depending on the orientation of the patterning structure, the
design of the lithographic apparatus, and other conditions, such
as, for example, whether or not the patterning structure is held in
a vacuum environment. The support can use mechanical clamping,
vacuum, or other clamping techniques, for example, electrostatic
clamping under vacuum conditions. The support structure may be a
frame or a table, for example, which may be fixed or movable as
required and which may ensure that the patterning structure is at a
desired position, for example with respect to the projection
system. Any use of the terms "reticle" or "mask" herein may be
considered synonymous with the more general term "patterning
structure".
[0011] Although specific reference may be made in this text to the
use of lithographic apparatus in the manufacture of ICs, it should
be understood that the lithographic apparatus described herein may
have other applications, such as the manufacture of integrated
optical systems, guidance and detection patterns for magnetic
domain memories, liquid-crystal displays (LCDs), thin-film magnetic
heads, etc. The skilled artisan will appreciate that, in the
context of such alternative applications, any use of the terms
"wafer" or "die" herein may be considered as synonymous with the
more general terms "substrate" or "target portion", respectively.
The substrate referred to herein may be processed, before or after
exposure, in for example a track (a tool that typically applies a
layer of resist to a substrate and develops the exposed resist) or
a metrology or inspection tool. Where applicable, the disclosure
herein may be applied to such and other substrate processing tools.
Further, the substrate may be processed more than once, for example
in order to create a multi-layer IC, so that the term substrate
used herein may also refer to a substrate that already contains
multiple processed layers.
[0012] The lithographic apparatus may be of a type having two (dual
stage) or more substrate tables (and/or two or more mask tables).
In such "multiple stage" machines the additional tables may be used
in parallel, or preparatory steps may be carried out on one or more
tables while one or more other tables are being used for
exposure.
[0013] The lithographic apparatus may also be of a type wherein the
substrate is immersed in a liquid having a relatively high
refractive index, e.g. water, so as to fill a space between the
final element of the projection system and the substrate. Immersion
liquids may also be applied to other spaces in the lithographic
apparatus, for example, between the mask and the first element of
the projection system. Immersion techniques are well known in the
art for increasing the numerical aperture of projection
systems.
[0014] In order to transfer the pattern of the patterning structure
to the desired target portion on a substrate with extreme
precision, the position of the patterning structure should be very
well-defined. Before exposure, the patterning structure is placed
on the support structure, for instance by using a robot arm. In one
of several alignment steps, called pre-alignment, the position of
the patterning structure with respect to the position of the
support structure of the patterning structure is determined.
Pre-alignment is most often carried out before the robot arm places
the patterning structure on the support structure, because at that
stage the position of patterning structure and support structure
can relatively easy be adjusted with respect to each other.
[0015] For pre-alignment purposes, sensors are generally used to
measure alignment markers at the system parts (patterning
structure, substrate, support structure, stages etc.), which are
aligned by illuminating them in reflection or transmission. In
current optical lithography, a high contrast marker on a reflective
patterning structure may be obtained by using the same techniques
as used for patterning the patterning structure, i.e. by using an
absorbing layer on top of a reflective substrate. However,
different materials may be used to obtain the difference in
reflectivity at these smaller wavelengths. As the markers are
generally constructed adjacent to the pattern to be transferred,
both elements may be composed of the same materials. As a result
the illumination of the markers, used for pre-alignment purposes,
should also include a beam having a smaller wavelength.
[0016] It is generally desirable to illuminate an alignment marker
with a light source with a wavelength between 400-1500 nm. A light
source for this range of wavelengths can easily be obtained and is
generally inexpensive. Unfortunately, the contrast of the marker,
originating from the difference in reflectivity of the materials
that are used in a small-wavelength regime (like for instance EUV),
deteriorates rapidly with larger wavelengths. At wavelengths
between 400-1500 nm, the coefficients of reflectivity of the
reflective surface and the absorbing layer used in small-wavelength
lithography are about the same. Consequently, pre-alignment of a
reflective patterning structure with respect to the support
structure may be difficult to obtain on the basis of a difference
of reflectivity between absorbing layer and reflective substrate
using light at larger wavelengths.
SUMMARY
[0017] One embodiment of the invention provides an apparatus
including a first support structure configured to support an
element including an alignment marker provided with at least one
height difference. The apparatus further includes an alignment
sensor comprising a light source configured to provide a light beam
that illuminates the alignment marker, and at least one detector
arranged to receive a rflection of the light beam from the
alignment marker and configured to detect the at least one height
difference of the alignment marker based on the reflection.
Embodiments of the invention also include use of such an apparatus
to align the element with respect to the first support structure
based on the at least one height difference.
[0018] In an embodiment of the invention, there is provided an
apparatus including a first support structure configured to support
an element, the element including an alignment marker provided with
at least one height difference. The apparatus also includes an
alignment sensor including a light source, the light source being
configured to provide a light beam that illuminates the alignment
marker; and at least one detector configured to detect the at least
one height difference of the alignment marker by analyzing the
light beam reflected by the alignment marker in order to allow
alignment of the element with respect to the first support
structure.
[0019] In a further embodiment of the invention, the alignment
sensor further includes imaging optics configured to control a
trajectory and/or a characteristic of reflected light of the light
beam impinging on the alignment marker towards the at least one
detector.
[0020] In a further embodiment of the present invention, the
apparatus is a lithographic apparatus, the element is a patterning
structure and the first support structure is a support structure
configured to support the patterning structure. Such a lithographic
apparatus may further include a second support structure configured
to support a substrate, an illumination system configured to
provide a beam of radiation, the patterning structure serving to
receive the beam of radiation and to produce a patterned beam with
a pattern in its cross-section, and a projection system configured
to project the patterned beam onto a target portion of the
substrate.
[0021] An apparatus according to a further embodiment of the
invention is configured to align an element (e.g. a patterning
structure) with respect to a support structure on which the element
is disposed. Such an apparatus may comprise a light source
configured to direct a light beam onto at least one alignment
marker arranged on said patterning structure, said light beam
having an angle of incidence and a principal angle of reflectance;
and a detector configured to receive a reflection of a portion of
the light beam by said at least one alignment marker at an angle
other than the principal angle of reflectance.
[0022] Embodiments of the invention also include device
manufacturing methods, semiconductor devices manufactured with
apparatus and/or methods as disclosed herein, patterning structures
and methods of aligning an element as disclosed herein.
BRIEF DESCRIPTION OF THE DRAWINGS
[0023] Embodiments of the invention will now be described, by way
of example only, with reference to the accompanying schematic
drawings in which corresponding reference symbols indicate
corresponding parts, and in which:
[0024] FIG. 1 depicts a lithographic apparatus according to an
embodiment of the invention;
[0025] FIG. 2 depicts a conventional alignment sensor;
[0026] FIGS. 3a and 3b show a reflective patterning structure
illuminated with different wavelength beams;
[0027] FIG. 4 schematically shows a method for aligning a
patterning structure according to an embodiment of the present
invention;
[0028] FIG. 5 shows the concept of scattering and diffraction;
[0029] FIG. 6 shows an apparatus configured to align a patterning
structure according to an embodiment of the present invention;
[0030] FIGS. 7a, 7b schematically illustrate the influence of tilt
for a marker in a defocus position; and
[0031] FIG. 8 schematically depicts an apparatus configured to
align a patterning structure according to an embodiment of the
present invention.
DETAILED DESCRIPTION
[0032] Embodiments of the invention include an alignment sensor, a
lithographic apparatus, and a device manufacturing method using the
same. Embodiments of the invention also include a high-contrast
marker provided on an element, wherein the contrast may result from
the detection of at least one height difference present in the
high-contrast marker.
[0033] FIG. 1 schematically depicts a lithographic apparatus
according to an embodiment of the invention. The apparatus
includes: an illumination system (illuminator) IL configured to
provide a beam PB of radiation (e.g. UV or EUV radiation) and a
first support structure (e.g. a mask table) MT configured to
support a patterning structure (e.g. a mask) MA and connected to
first positioning device PM configured to accurately position the
patterning structure with respect to the projection system,
("lens") item PL. The apparatus further includes a substrate table
(e.g. a wafer table) WT configured to hold a substrate (e.g. a
resist-coated wafer) W and connected to a second positioning device
PW configured to accurately position the substrate with respect to
the projection system ("lens"), item PL, the projection system
(e.g. a reflective projection lens) PL being configured to image a
pattern imparted to the projection beam PB by a patterning device
MA onto a target portion C (e.g. including one or more dies) of the
substrate W.
[0034] As here depicted, the apparatus is of a reflective type
(e.g. employing a reflective mask or a programmable mirror array of
a type as referred to above). Alternatively, the apparatus may be
of a transmissive type (e.g. employing a transmissive mask).
[0035] The illuminator IL receives a beam of radiation from a
radiation source SO. The source and the lithographic apparatus may
be separate entities, for example when the source is a plasma
discharge source. In such cases, the source is not considered to
form part of the lithographic apparatus and the radiation beam is
generally passed from the source SO to the illuminator IL with the
aid of a radiation collector including, for example, suitable
collecting mirrors and/or a spectral purity filter. In other cases
the source may be integral part of the apparatus, for example when
the source is a mercury lamp. The source SO and the illuminator IL,
may be referred to as a radiation system.
[0036] The illuminator IL may include an adjusting structure
configured to adjust the angular intensity distribution of the
beam. Generally, at least the outer and/or inner radial extent
(commonly referred to as .sigma.-outer and .sigma.-inner,
respectively) of the intensity distribution in a pupil plane of the
illuminator can be adjusted. The illuminator provides a conditioned
beam of radiation, referred to as the beam of radiation PB, having
a desired uniformity and intensity distribution in its
cross-section.
[0037] The beam PB is incident on the mask MA, which is held on the
mask table MT. Being reflected by the mask MA, the beam PB passes
through the lens PL, which focuses the beam onto a target portion C
of the substrate W. With the aid of the second positioning device
PW and position sensor IF2 (e.g. an interferometric device), the
substrate table WT can be moved accurately, e.g. so as to position
different target portions C in the path of the beam PB. Similarly,
the first positioning device PM and position sensor IF1 can be used
to accurately position the mask MA with respect to the path of the
beam PB, e.g. after mechanical retrieval from a mask library, or
during a scan. In general, movement of the object tables MT and WT
will be realized with the aid of a long-stroke module (coarse
positioning) and a short-stroke module (fine positioning), which
form part of the positioning device PM and PW. However, in the case
of a stepper (as opposed to a scanner) the mask table MT may be
connected to a short stroke actuator only, or may be fixed. Mask MA
and substrate W may be aligned using mask alignment marks M1, M2
and substrate alignment marks P1, P2.
[0038] The depicted apparatus can be used in the following
preferred modes:
[0039] 1. In step mode, the mask table MT and the substrate table
WT are kept essentially stationary, while an entire pattern
imparted to the beam is projected onto a target portion C at once
(i.e. a single static exposure). The substrate table WT is then
shifted in the X and/or Y direction so that a different target
portion C can be exposed. In step mode, the maximum size of the
exposure field limits the size of the target portion C imaged in a
single static exposure.
[0040] 2. In scan mode, the mask table MT and the substrate table
WT are scanned synchronously while a pattern imparted to the beam
is projected onto a target portion C (i.e. a single dynamic
exposure). The velocity and direction of the substrate table WT
relative to the mask table MT is determined by the
(de-)magnification and image reversal characteristics of the
projection system PL. In scan mode, the maximum size of the
exposure field limits the width (in the non-scanning direction) of
the target portion in a single dynamic exposure, whereas the length
of the scanning motion determines the height (in the scanning
direction) of the target portion.
[0041] 3. In another mode, the mask table MT is kept essentially
stationary holding a programmable patterning device, and the
substrate table WT is moved or scanned while a pattern imparted to
the beam is projected onto a target portion C. In this mode,
generally a pulsed radiation source is employed and the
programmable patterning device is updated as required after each
movement of the substrate table WT or in between successive
radiation pulses during a scan. This mode of operation can be
readily applied to maskless lithography that utilizes programmable
patterning devices, such as a programmable mirror array of a type
as referred to above.
[0042] Combinations and/or variations on the above described modes
of use or entirely different modes of use may also be employed.
[0043] For pre-alignment purposes, the lithographic apparatus of
the present invention is furthermore provided with at least one
pre-alignment sensor. The sensor is used to pre-align components
within a few microns to set up the consecutive alignment
procedures. There are several possible pre-alignment procedures.
Pre-alignment may be performed, for example, while the mask MA is
held at a predetermined position, for example, by a robot arm. The
position of the robot arm with respect to the support structure MT
of the mask MA is known. By measuring the position of the mask MA
with respect to the position of the robot arm, a correction system
can either adapt the position of the robot arm or the position of
the mask table MT, while maintaining the predetermined trajectory
of the robot arm towards the mask table MT. Alternatively, the
correction system can adapt the trajectory of the robot arm while
maintaining the position of mask table MT.
[0044] It will be appreciated that a sensor as disclosed herein can
also be used in a pre-alignment procedure that differs from the
aforementioned one. Furthermore, although the description herein
primarily considers use in pre-alignment procedures, it will be
appreciated that the use of such a sensor in consecutive alignment
procedures may also be very useful and is expressly
contemplated.
[0045] FIG. 2 shows a pre-alignment sensor 1 configured for the
pre-alignment of a reflective mask MA. A light source 7 projects a
light beam 4 on a pre-alignment marker 5 located on a mask MA next
to the lithographic pattern 3 to be exposed. In addition, besides
the aforementioned pre-alignment marker 5 an additional
pre-alignment marker may be positioned on the mask table MT for
pre-alignment purposes. The pre-alignment marker 5 may be one of
the alignment markers M1 and M2, used in the alignment procedure,
but may also be an additional marker for pre-alignment purposes.
The pre-alignment marker 5 will therefore in the rest of this
document be referred to as alignment marker 5, and the
pre-alignment sensor 1 will be referred to as alignment sensor
1.
[0046] Alignment marker 5 includes absorbing and reflecting parts
that form a useful pattern. Part of the projected beam 4 is
reflected and detected by at least one detector 9. An analysis of
the detected image reveals what compensation should be applied to
position mask MA correctly. The concept of reflection in this
document refers to all kind of light that is bounced off the
surface as a result of the impingement of light beam 4. This
includes light that is reflected by diffraction, scattering or
diffuse reflection.
[0047] A sensor source 7 generally generates radiation with a
wavelength between about 400-1500 nm. However, each component
within the lithographic apparatus of the present invention,
including the mask, is optimized for a much smaller wavelength,
e.g. corresponding with EUV, that is generated by source SO.
Therefore, it may not be practical to use such a sensor source 7
with alignment marker 5 if the latter is made in the same
production steps as are used to produce pattern 3.
[0048] As shown in FIG. 3a, a reflective mask MA includes a mask
substrate 11 with a reflective surface covered with pattern 3 that
is designed to be transferred to a target portion of a substrate.
For the sake of simplicity the reflective surface, which is
generally constructed using a multi-layer coating, is drawn as a
part of the mask substrate 11. The pattern 3 may be created by
selectively depositing a radiation-absorbing layer 13 on top of the
reflective surface, that absorbs the incoming projection beam of
radiation 6 to a great extent. On a mask substrate 11, a pattern
may be made by selectively depositing a radiation-absorbing layer
13 on top of said mask substrate 11. The thickness of the
radiation-absorbing layer 13 generally is about 50-500 nm. The
material that is used is known to someone skilled in the art, and
may be selected from a group including Cr, TaN, TaSiN, TiN and
SiMo. For the sake of simplicity no additional buffer layers are
drawn, although they may be present. The buffer layers, which are
generally used to enable mask patterning and repair, may comprise
materials like SiO.sub.2, Si, SiON, C and Ru.
[0049] An incoming beam of radiation 6 is partly reflected by the
reflective surface of the mask substrate 11, and partly absorbed by
the absorbing layer 13. The detector 9 detects a difference in
reflectivity and the information is then translated in a difference
in intensity as a function of position. By comparing the detected
values with reference values, the difference between the actual and
the desired position of the mask MA may be established.
[0050] Alignment marker 5 that is located on mask MA may be
constructed in the same fashion as a pattern on a mask MA.
Unfortunately, the absorption of radiation-absorbing layer 13 is
wavelength-dependent and as described before, the wavelength
.lambda..sub.Sensor of the incoming beam of radiation 4 projected
on the alignment marker 5 by the sensor source 7 can be longer than
the wavelength .lambda..sub.SO of the beam of radiation 6. The
consequences of the use of the different wavelength is depicted in
FIG. 3b. The radiation-absorbing layer 13' no longer absorbs an
incoming beam of radiation 4. Both the light beamlets projected on
the absorbing layer 13' as well as the light beamlets projected on
the reflective mask substrate 11 are reflected in a substantially
equal fashion. As a result the detector 9 can no longer detect a
significant difference in intensity and therefore accurate
pre-alignment of the mask MA may become difficult.
[0051] In order to enable the detector 9 to detect the difference
in reflectivity at longer wavelengths, different materials for the
absorbing layer 13' at the location of the marker may be used. The
different absorbing layer is arranged to absorb the light emitted
by the sensor source 7. Consequently, the detector 9 can again
detect a difference in intensity between the two surfaces, and the
position of the marker can be established accurately. However, in
this approach, in order to create the aforementioned configuration,
it is desirable to manufacture the mask pattern 3 and the alignment
marker 5 using different process flows. As a result, misalignment
between alignment marker 5 and mask pattern 3 may exist, since an
alignment step is needed to manufacture one with respect to the
other. In addition, the processing of the alignment marker 5 could
also deteriorate the quality of the mask pattern 3 and vice versa.
Therefore, it may be desirable to use a technique other than
different radiation-absorbing layers at separate locations on top
of the mask substrate 11.
[0052] FIG. 4 schematically shows a method to align the patterning
structure according to an embodiment of the present invention.
Although the reflection difference between the radiation-absorbing
layer 13' and the reflective surface may be very small, there is a
height difference corresponding to the thickness of the
radiation-absorbing layer 13' and optionally to the thickness of
one or more intermediate buffer layers. The alignment sensor 1
according to an embodiment of the present invention is therefore
arranged to determine the position of an alignment marker 5 by
detecting height differences instead of differences in
reflectivity. Besides a light source 7 and a detector 9, the
alignment sensor 1 according to an embodiment of the invention also
includes imaging optics 8. The imaging optics 8 is arranged to
enable the detector 9 to detect differences in intensity by
processing and thereby enhancing an alignment marker image caused
by height differences of and/or within the alignment marker 5. The
detector 9 may be any known detector in the art, like a
(CCD)-camera, a position-sensitive detector (PSD) or a quad
cell.
[0053] Because the alignment sensor of the present invention 1 may
use a conventional sensor source 7 that generates a light beam with
a wavelength in the range of 400-1500 nm, the alignment sensor 1
may be constructed to be not expensive. Note that the alignment
marker 5 and the mask pattern 3 are illuminated by different
sources, each source generating radiation with a different
wavelength. As a result the alignment sensor 1 may be used
independently from the illuminator IL of the lithographic
apparatus. In an embodiment of the invention, the alignment sensor
1 can be provided within the lithographic apparatus, thus enabling
the alignment to be performed in situ.
[0054] Height differences lead to several effects that can be used
by the imaging optics. In an embodiment of the invention, the
imaging optics may include elements that enable the use of both
bright-field and dark-field illumination. When dark-field
illumination is used, the fact that height differences lead to
sharp edges at the side of patterns is used. Illumination of such a
pattern at an oblique angle, leads to scattering of the light at
the sharp edges. Consequently, when the imaging optics 8 and the
detector 9 are adapted in a suitable fashion, the detector may
observe the edges as bright lines in a dark background.
[0055] The alignment marker 5 may include a single edge, a grating,
a grid or any combination of these elements to create any marker
shape or pattern that is required. A dense pattern of
radiation-absorbing layer lines (a grating) allows the creation of
an alignment marker 5 with a large bright area, for example, with a
circular shape, utilizing the diffraction at the grating pattern.
It will be appreciated that one or more of the diffracted orders
may then be used for imaging. Such a grating may include numerous
lines with a width of about 1-1000 nm and a height of about 50-500
nm at a periodic distance of several tens of microns.
[0056] The use of bright-field illumination exploits the fact that
the difference in height between the top of the reflective surface
and the top of the radiation-absorbing layer introduces a
phase-difference between light beamlets impinging on one or the
other, resulting in phase-contrast in the image. The imaging optics
can be adapted to enable the application of some sort of shearing
technique to enhance the phase-contrast, thereby generating a high
contrast marker image. Again, a single edge phase step, phase
grating or grid can be given any desired shape or pattern in order
to create any marker shape or pattern that is required.
[0057] FIG. 5 schematically shows the concept of
scattering/diffraction of light beamlets. A mask is provided with a
single structure 15. Although a single structure 15 is represented
in FIG. 5, it should be understood that the concept may be further
enhanced by using more structures. The structure 15 is made of the
radiation-absorbing material that is also used for the creation of
the pattern 3 on the mask MA. Since the sensor source 7 generates a
light beam 4 of a wavelength that is not well-absorbed by the
radiation-absorbing material, the beamlets falling on the
reflective surface of mask substrate 11 of the mask MA reflect
equally well as the beamlets falling on the structure 15 including
the radiation-absorbing material. However, the beamlet that hits
the side of the structure 15 is reflected in an entire different
direction; it scatters, as indicated with a fat arrow 16. By
providing a number of structures in a periodic pattern, the
beamlets, which scatter on the structures, form a diffraction
pattern.
[0058] By composing an alignment marker 5 with suitable structures
and by using the imaging optics 8, the direction (change of
direction of arrow) and intensity (solid line becomes dashed line)
of scattered or diffracted beamlets can be controlled as depicted
in FIG. 6. The detector 9 of the alignment sensor 1 can therefore
be positioned at any suitable position in the lithographic
apparatus. Since the structure of the alignment marker 5 and its
position on the mask MA is known, the position of the mask MA can
be determined.
[0059] In an embodiment of the invention, the roughness of a
surface can be used for the same purpose, as long as height
differences associated with said roughness are large enough. The
impinging light beam will in this case reflect in a diffused
manner. The alignment marker 5 may then for example be formed by
providing a pattern including a combination of at least one surface
area with a certain roughness surrounded by a surface area with a
different (e.g. smaller) roughness. Note that a marker using a
radiation-absorbing layer may fit the aforementioned
characteristics. In such an embodiment of the invention, a rough
surface can be simulated by providing a number of height
differences closely together. The radiation-absorbing layer then
again introduces the height differences.
[0060] FIGS. 7a, 7b, and 8 illustrate embodiments of the invention,
in which a reflective alignment marker 22 is incorporated for use
with a diffractive grating. The alignment marker 22 can be imaged
using an alignment sensor 1 as described herein. The alignment
marker 22 may be positioned at different distances from the
alignment sensor imaging optics 8 and thus may be out of focus.
When the alignment marker 22 is at a defocus position, the
alignment sensor 1 becomes more sensitive to tilt. The tilt of the
beam coming from the alignment marker 22 may be caused by several
effects like tilt of the alignment marker 22, a wavelength shift of
the light source 7, an incorrect grating period of a diffractive
grating, a position error of the light source 7, etc.
[0061] In a case where the divergence of the diffracted beam 23 is
smaller than the numerical aperture of the imaging optics 8, or if
the beam 23 does not fill the pupil of the imaging optics 8 in an
entirely homogeneous manner, the sensitivity to tilt may increase
dramatically. As a result, a slight tilt of the alignment marker 22
may result in a measurement error, especially when the image 24 of
the alignment marker 22 is out of focus. The aforementioned
situation is depicted in FIGS. 7a and 7b, wherein the imaging
optics 8 for simplicity is represented by a single optical element
(e.g. lens). Without tilt, the image 24 of the alignment marker 22
is still positioned correctly via diffracted beam 23 at a focal
plane 25 of the imaging optics 8, even though the image 24 of the
alignment marker 22 is out of focus, as shown in FIG. 7a. However,
a slight tilt of the diffracted beam 23 may induce a large error E,
as shown in FIG. 7b. The position of the image 24 of the alignment
marker 22 that will be imaged is shifted.
[0062] In an embodiment of the present invention, shown in FIG. 8,
the numerical aperture (NA) of the imaging optics 8 is overfilled.
When the divergence of the beam 23 from the alignment marker 22 is
larger than the aforementioned NA, such that the intensity
distribution in the pupil of the imaging optics 8 is uniform, the
tilt-related problem becomes negligible. The aforementioned
situation can be realized in several ways. First the NA of the
imaging optics 8 can be decreased, by introducing, for example, a
limiting entrance pupil 29. Secondly the divergence of the
diffracted beam 23 can be increased, e.g., by tuning the width of
the grating or grid features, by varying the grating or grid period
along one or more features along the alignment marker 22, by
increasing the number and/or size of the light source 7, by using a
light source 7 with a large bandwidth or by selecting the angle of
incidence of the light beams 20 that illuminate the alignment
marker 22 and the grating period in such a way that the diffracted
beams 23 from individual light sources 7 have a somewhat different
angle and/or by several other methods. The use of one or more of
aforementioned options may provide the present invention with a
diffractive beam 23 with an adequate width and intensity
distribution.
[0063] The imaging optics can enhance the contrast of the marker
image. Furthermore it may be configured to enable a flexible
placement of the at least one detector within a lithographic
apparatus.
[0064] Applications of embodiments of the invention may include use
of the at least one height difference to detect the alignment
marker with the at least one detector to enable the determination
of the position of the alignment marker when light with a
wavelength between about 400-1500 nm is used to impinge on the
alignment marker.
[0065] By using an alignment marker with a height difference, the
patterning structure can be provided with an alignment marker and a
pattern, which serves to impart the projection beam with a pattern
in its cross-section. In an embodiment of the invention, both
structures can be manufactured simultaneously in the same
manufacturing process. Sequential manufacturing of both structures
in different processes may create a high risk of misalignment
between the two objects. Furthermore the processing of the
alignment marker may then deteriorate the quality of the pattern
and vice versa.
[0066] In a further embodiment of the invention, the patterning
structure is a reflective patterning structure and the alignment
marker is a reflective marker. Such an arrangement may be used to
enable the patterning of a beam of radiation with a small
wavelength, i.e. smaller than about 200 nm, e.g.,
EUV-radiation.
[0067] The reflective marker may include a reflecting surface, upon
which in at least one area, a radiation-absorbing layer is
deposited, the radiation-absorbing layer introducing at least one
height difference and being arranged to absorb radiation with a
wavelength corresponding to a wavelength of the projection beam of
radiation provided by the illumination system. When the pattern
that is used to impart the projection beam of radiation with its
cross-section is manufactured in the same way, both features can be
manufactured in the same manufacturing process. The
radiation-absorbing layer may have thickness of about 50-500 nm,
and may include a material selected from the group consisting of
Cr, TaN, TaSiN, TiN and SiMo.
[0068] In a further embodiment the imaging optics and the at least
one detector are arranged to enable alignment using at least one of
diffraction, scattering, diffuse reflection and phase-contrast.
These optical phenomena may be used to enhance the contrast of the
image of the alignment marker.
[0069] In embodiments of the invention as disclosed herein, the
alignment marker may include any combination of at least one of one
or more elements selected from the group consisting of a single
edge marker, a grating, and a grid.
[0070] In embodiments of a lithographic apparatus as described
herein, the alignment sensor may be independent of the illumination
system of the lithographic apparatus. The light beam generated by
the light source of the alignment sensor may have a different
wavelength than the projection beam of radiation provided by the
illumination system. It will be appreciated that embodiments of the
invention include applications in which the light beam does not
apply an additional dose to the target portion of the substrate
(e.g. does not expose a resist layer). The beam of radiation may be
EUV radiation, while the light beam may have a wavelength in a
range of 400-1500 nm.
[0071] In embodiments of a lithographic apparatus as described
herein, the alignment sensor may be provided within the
lithographic apparatus to enable the alignment to be performed in
situ. This measure may be used to enable the operation of the
alignment sensor in a vacuum environment.
[0072] Embodiment of the invention include a semiconductor device
manufactured with an apparatus as disclosed herein.
[0073] In another embodiment of the invention, there is provided a
device manufacturing method including providing a substrate;
providing a beam of radiation using an illumination system; using
patterning structure supported by a support structure to impart the
beam of radiation with a pattern in its cross-section; and
projecting the patterned beam of radiation onto a target portion of
the substrate, wherein prior to the using, the method includes, for
the purpose of aligning the patterning structure with respect to
the support structure: providing a light beam, impinging the light
beam on an alignment marker with at least one height difference on
the patterning means and detecting the at least one height
difference of the marker with at least one detector.
[0074] In an embodiment of the invention, there is provided a
device manufacturing method including patterning a beam of
radiation with a patterning structure according to a desired
pattern, the patterning structure being supported by a support
structure; and projecting the patterned beam of radiation onto a
target portion of a substrate, wherein prior to the patterning, the
method includes aligning the patterning structure with respect to
the support structure, the aligning including: impinging a light
beam on an alignment marker disposed on the patterning structure,
the alignment marker including at least one height difference, and
detecting the at least one height difference of the marker with at
least one detector.
[0075] In yet another embodiment of the invention, there is
provided a semiconductor device produced with a device
manufacturing method as disclosed herein.
[0076] In an embodiment of the invention, there is provided a
patterning structure including a pattern that is used, upon
illumination, to impart a beam of radiation with its cross-section;
and an alignment marker; wherein the pattern and the alignment
marker are manufactured in parallel using the same manufacturing
process.
[0077] In a further embodiment of the invention, the pattern is
illuminated by a projection beam of radiation and the marker is
illuminated by a light beam. The wavelengths of the both beams are
different. In a further embodiment of the invention, the beam of
radiation is EUV radiation and the light beam has a wavelength in a
range of about 400-1500 nm.
[0078] Yet another embodiment of the invention includes a method of
aligning an element including an alignment marker provided with at
least one height difference, the method including providing a light
beam on the alignment marker and producing reflected light coming
from the alignment marker, and detecting the at least one height
difference of the alignment marker using the reflected light in
order to allow the aligning of the element.
[0079] In an embodiment of the invention, there is provided a
method of aligning an element including an alignment marker
provided with at least one height difference, the method including:
illuminating the alignment marker with a light beam; and detecting
the at least one height difference of the alignment marker with the
light beam reflected by the alignment marker.
[0080] In an embodiment of the invention, the element including the
alignment marker can be aligned by using any type of light with a
wavelength between 400-1500 nm.
[0081] In yet another embodiment of the invention, there is
provided an apparatus for aligning a patterning structure with
respect to a support structure on which the patterning structure is
disposed, the apparatus including: a light source configured to
illuminate at least one alignment marker arranged on the patterning
structure; and a detector configured to receive light reflected by
the at least one alignment marker and to detect height differences
within the at least one alignment marker.
[0082] While specific embodiments of the invention have been
described above, it will be appreciated that the invention may be
practiced otherwise than as described. Embodiments of the invention
also include computer programs (e.g. one or more sets or sequences
of instructions) to control a lithographic apparatus to perform a
method as described herein, and storage media (e.g. disks,
semiconductor memory) storing one or more such programs in
machine-readable form. The description is not intended to limit the
invention.
* * * * *