U.S. patent application number 10/732712 was filed with the patent office on 2005-06-16 for method and apparatus for manufacturing a transistor-outline (to) can having a ceramic header.
Invention is credited to Zheng, Tieyu.
Application Number | 20050129372 10/732712 |
Document ID | / |
Family ID | 34652925 |
Filed Date | 2005-06-16 |
United States Patent
Application |
20050129372 |
Kind Code |
A1 |
Zheng, Tieyu |
June 16, 2005 |
Method and apparatus for manufacturing a transistor-outline (TO)
can having a ceramic header
Abstract
A method of manufacturing a hermetically-sealed optoelectronic
package having an insulating base, a metal cap, and a metal layer
sandwiched between the metal cap and the insulating base includes
supplying a force to push the metal cap against the metal layer and
to push the metal layer against the insulating base. A first
electrode is applied to the metal cap, and a second electrode is
applied to the metal layer. A current is supplied between the first
and second electrodes to weld the metal cap to the metal layer.
Inventors: |
Zheng, Tieyu; (Chandler,
AZ) |
Correspondence
Address: |
INTEL CORPORATION
P.O. BOX 5326
SANTA CLARA
CA
95056-5326
US
|
Family ID: |
34652925 |
Appl. No.: |
10/732712 |
Filed: |
December 11, 2003 |
Current U.S.
Class: |
385/94 ;
438/26 |
Current CPC
Class: |
G02B 6/4201 20130101;
G06F 11/3051 20130101 |
Class at
Publication: |
385/094 ;
438/026 |
International
Class: |
H01L 021/00; G02B
006/36 |
Claims
What is claimed is:
1. A method of manufacturing a hermetically-sealed optoelectronic
package having an optoelectronic device mounted on a first portion
of a top surface of an insulating base, a metal layer mounted to a
second portion of the top surface of the insulating base, the
second portion surrounding the first portion, and a metal cap
coupled to the metal layer, the method comprising: supplying a
force to push the metal cap against the metal layer; applying a
first electrode to the metal cap; applying a second electrode to
the metal layer; and supplying a current between the first and
second electrodes to weld the metal cap to the metal layer.
2. The method of claim 1, wherein the second electrode has multiple
fingers to make contact with the metal layer at multiple
points.
3. The method of claim 2, wherein the multiple fingers of the
second electrode are independently positioned on the metal
layer.
4. The method of claim 2, further comprising: independently
adjusting one or more currents provided to the multiple fingers of
the second electrode.
5. The method of claim 1, wherein the metal cap is coupled to an
upper surface of the metal layer and the second electrode is also
coupled to the upper surface of the metal layer.
6. The method of claim 1, wherein the metal cap is coupled to an
upper surface of the metal layer and the second electrode is
coupled to a side surface of the metal layer, the side surface
being substantially 90 degrees from the upper surface.
7. The method of claim 1, wherein the metal cap is coupled to an
upper surface of the metal layer and the second electrode is
coupled to a bottom surface of the metal layer, the bottom surface
being substantially 180 degrees from the top surface.
8. The method of claim 1, wherein the second electrode is
cone-shaped.
9. A method for manufacturing an electronic package, comprising:
applying a first electrode to a cap; applying at least one or more
second electrodes to a ceramic substrate, wherein the at least one
or more second electrodes are applied to at least one or more
sidewalls of the ceramic substrate and wherein the ceramic
substrate includes a seal disposed on a surface of the ceramic
substrate to contact the cap; contacting the cap with the seal of
the ceramic substrate; and applying a current between said first
electrode and said at least one or more second electrodes to weld
the cap to the ceramic substrate.
10. A method as claimed in claim 9, wherein the ceramic substrate
is a rectangular structure having at least four sidewalls.
11. A method as claimed in claim 9, wherein the ceramic substrate
has a least one sidewall.
12. A method as claimed in claim 9, wherein the substrate has at
least one curved sidewall.
13. A method as claimed in claim 9, wherein the ceramic substrate
includes a radio-frequency circuit disposed thereon.
14. A method as claimed in claim 9, further comprising controlling
the current in individual ones of the at least one or more second
electrodes to provide a hermetic seal between the cap and the
ceramic substrate.
15. A method as claimed in claim 9, wherein the at least one or
more second electrodes include an insulator to contact a base
support during said applying a current.
16. A method as claimed in claim 9, wherein the ceramic substrate
does not include filled vias to pass welding current.
17. A method as claimed in claim 9, wherein the ceramic substrate
is a rectangular structure having four sidewalls, the at least one
or more second electrodes including four second electrodes to be
applied to respective sidewalls of the ceramic substrate.
18. A method for manufacturing an electronic package, comprising:
applying a first electrode to a cap; applying at least one or more
second electrodes to an insulator substrate, wherein the at least
one or more second electrodes are applied to at least one or more
sidewalls of the insulator substrate and wherein the insulator
substrate includes a seal disposed on a surface of the isolator
substrate to contact the cap; contacting the cap with the seal of
insulator substrate; and applying a current between said first
electrode and said at least one or more second electrodes to weld
the cap to the insulator substrate.
19. A method as claimed in claim 18, wherein the insulator
substrate has a conductivity of less than 1
(ohm-centimeters).sup.-1.
20. A method as claimed in claim 18, wherein the insulator
substrate is a rectangular structure having four sidewalls, the at
least one or more second electrodes including four second
electrodes to be applied to respective sidewalls of the insulator
substrate.
Description
FIELD OF THE DISCLOSURE
[0001] An optoelectronic assembly and, more specifically, a package
adapted to house an optoelectronic assembly are disclosed.
BACKGROUND
[0002] Optoelectronic components or active optical devices such as
diode lasers, light-emitting diodes (LEDs), and photodiode
detectors are used for printing, data storage, optical data
transmission and reception, laser pumps, and a multitude of other
applications. Most optoelectronic components are typically sealed
inside a hermetically sealed package for performance requirements
and operational stability. Optoelectronic packages are intended to
provide a hermetic structure to protect passive and active optical
elements and devices as well as related electrical components from
damage resulting from moisture, dirt, heat, radiation, and/or other
sources.
[0003] For high-speed applications (e.g., 2 Gbps and above), proper
operation of the optical and/or electrical components inside the
package may be affected unless careful attention is paid to the
packaging of these components. Standard optical module packaging
such as that used in optical telecommunication applications
requires a hermetic enclosure. Sealed packages are necessary to
contain, protect, and electrically connect optoelectronic
components. These requirements have resulted in packages that are
large, costly, and more difficult to manufacture than typical
electronic packages. In fact, the cost of most optoelectronic
devices is mainly dominated by the package rather than the optical
devices themselves.
[0004] Current designs of optoelectronic packages and associated
fabrication processes are not easily adapted for automated
manufacturing techniques because conventional packages for
optoelectronic components such as large so-called "butterfly"
packages are characterized by numerous mechanical parts (submounts,
brackets, ferrules, etc.), and three-dimensional (3D) alignment
requirements. Butterfly packages are basically can-and-cover type
arrangements that contain an optical subassembly mounted to a
metallic baseplate, with leads coming out of the sides for
electrical connections. The optical subassembly may be built up
separately, outside of the can, and then later installed in the
can. The circuits within the optical subassembly are wire-bonded to
the leads of the butterfly can, which is then sealed with a lid to
create a hermetic enclosure. Unfortunately, conventional butterfly
cans are bulky, costly, and time-consuming to manufacture. In
addition, the electrical components require a separate electrical
subassembly that is located outside of the butterfly can. The
requirement of a separate electrical subassembly that is separate
and apart from the optical subassembly inside the butterfly can
increases manufacturing costs significantly.
[0005] Transistor-Outline (TO) packages are also commonly used to
house optoelectronic components. Conventional TO packages include a
generally cylindrical metal cap and a metal header or base, to
which the metal cap is attached. In such packages, metal-based
bonding techniques such as, for example, brazing or fusion welding,
are often used to provide a hermetic seal between the metal cap and
the header. To weld the metal cap onto the header, the header is
typically formed of a metallic material such as Kovar.TM. or
stainless steel.
[0006] In addition, when active optical devices (e.g., diode
lasers) and integrated circuits adapted to control the active
optical devices (e.g., diode drivers) are spaced too far apart from
each other, parasitic capacitance, resistance, and/or inductance
may affect electrical signals traveling between the components,
thus resulting in degradation of the electrical signal. The
electrical performance is of particular concern for high-speed
applications. Consequently, electrical performance may be improved
during high-speed applications when the distance between the active
optical device and its associated driving or receiving integrated
circuit chip is as short as possible. Although this arrangement
improves the electrical signal integrity, it increases heat
dissipation requirements of the assembly significantly.
[0007] As the power density increases in optoelectronic devices
and/or electrical components used in high-speed applications, a
suitable, optimal heat sink is necessary to dissipate heat
efficiently from the optoelectronic device and/or electrical
components. Heat sinks are devices capable of dissipating heat away
from the optoelectronic and/or electrical components into the
surrounding atmosphere by convection. Typical heat sinks include
cooling fins attached to a heat sink base that is in contact with
the header or base of the optoelectronic package. The fins of the
heat sink may have any shape and size necessary to spread heat away
from the optoelectronic device and/or electrical components, and
may be oriented either parallel or perpendicular relative to the
base of the optoelectronic package.
[0008] Commercially available heat sinks are generally square or
rectangular in shape. As such, the circular headers of conventional
optoelectronic packages require either modifications to the
structural design of the heat sinks to be able to accommodate the
circular headers, or manufacturing adjustments to attach the
circular header to the square or rectangular heat sink. This
configuration results in a complex, slow, and expensive
manufacturing process. Additionally, the quality of the contact
between the optoelectronic package and the attached heat sink has a
great impact on the overall thermal performance. Lower thermal
impedance between the optoelectronic package and the heat sink
results in higher conductive heat transfer. Therefore, it is
advantageous that the header of the optoelectronic package be in
intimate, conformal contact with the attached heat sink to optimize
the thermal characteristics, which results in increased
efficiency.
[0009] Moreover, existing optoelectronic packaging techniques often
involve manual or semi-automated manufacturing processes.
Therefore, to reduce manufacturing costs, it is advantageous to
employ automated batch packaging processes that can fabricate a
large number of optoelectronic packages simultaneously.
[0010] Therefore, there is a need for an improved optoelectronic
package and a process for making the optoelectronic package that
can address some or all of the problems described above.
BRIEF DESCRIPTION OF THE DRAWINGS
[0011] FIG. 1 is a perspective view of a package for housing an
optoelectronic assembly in accordance with the teachings of the
present disclosure;
[0012] FIG. 2 is an exploded view of the insulating base having a
plurality of holes that are filled with a conductive material
formed therein, a metal sealing member adapted to be secured to the
insulating base, and an adhesive layer located between the metal
sealing member and the insulating base;
[0013] FIG. 3 is an exploded view of the insulating base with the
plurality of filled holes covered by a metal layer, the adhesive
layer, and the metal sealing member;
[0014] FIG. 4a is an exploded view illustrating the optoelectronic
package populated with optoelectronic, optical, and electrical
components in accordance with a first embodiment;
[0015] FIG. 4b is an exploded view illustrating the optoelectronic
package populated with optoelectronic and electrical components in
accordance with a second embodiment;
[0016] FIG. 5 is an exploded view illustrating an exemplary welding
apparatus adapted to weld the metal cap to the metal sealing member
attached to the insulating base;
[0017] FIG. 6 is a front view illustrating the exemplary welding
apparatus before the metal cap is welded to the metal sealing
member attached to the insulating base; and
[0018] FIG. 7 is a front view illustrating the exemplary welding
apparatus during a welding operation to weld the metal cap to the
metal sealing member attached to the insulating base.
[0019] FIG. 8 illustrates a first example of an alternative welding
apparatus that does not supply current through metallic vias in the
insulating base to effect the hermetic seal.
[0020] FIGS. 9, 10 and 11 illustrate a second example of a welding
apparatus that supplies current between the metal cap 150 and the
metal sealing member 140 to effect a hermetic seal. FIG. 9 is an
exploded view. FIG. 10 is a cross-sectional view, and FIG. 11 is a
3-dimensaional view indicating contact points for electrodes.
[0021] FIGS. 12A and 12B are exploded views illustrating a third
example of a welding apparatus that supplies current between the
metal cap and the metal sealing member to effect a hermetic
seal.
[0022] FIG. 13A illustrates a fourth example of a welding apparatus
that supplies current between the metal cap and the metal sealing
member to effect a hermetic seal.
[0023] FIG. 13B shows more clearly a single finger of the second
electrode of FIG. 13A.
[0024] FIG. 14 illustrates another embodiment of a TO can suitable
for hermetic welding.
[0025] FIG. 15 shows an example cross section of a first electrode
placed over the metal cap, and a second electrode holding the
optoelectronic package from below and making contact along the
bottom periphery of the metal sealing member.
[0026] FIG. 16 illustrates multiple heat sinks placed in proximity
to the optoelectronic package to remove heat from the
optoelectronic package.
[0027] FIG. 17 illustrates in exploded view another embodiment of a
metal frame that overhangs the insulating base.
[0028] FIG. 18 is an example of a transponder housing for one or
more TO cans.
[0029] FIG. 19 is a cross section view of a metal cap illustrating
a projection on its rim.
[0030] FIGS. 20-21 illustrate another example of a TO can
embodiment that uses conductive vias similar to that described with
respect to FIGS. 1-7 for hermetically sealing the TO can. FIG. 20
shows in exploded view a schematic diagram of the components of the
TO can. FIG. 21 shows first electrode and second electrode coupled
to the TO can of FIG. 20.
DESCRIPTION OF THE PRESENTLY PREFERRED EMBODIMENTS
[0031] Referring to FIG. 1, a package 100 for housing an
optoelectronic assembly is shown. The package 100 includes an
insulating base or substrate 110, a metal sealing member 140, and a
metal cap 150. In one embodiment, the insulating base 110 is formed
of a material with good thermal conductivity for directing
dissipated heat away from the optoelectronic assembly. By using a
high thermal conductivity material, the insulating base 110 is
capable of effectively dissipating the heat of active optical
devices, e.g., diode lasers, and can incorporate integrated
circuits, e.g., diode driver chips, into the optoelectronic package
100. In the past, these integrated circuit chips have not been
integrated into the optoelectronic package 100 because the thermal
conductivity of the metallic header of conventional optoelectronic
packages was unsuitable for mounting such chips. As discussed in
greater detail below, the integrated optoelectronic package 100 of
the present disclosure, which includes the active optical device
200 and its associated integrated circuit 220 (see FIGS. 4a and 4b)
provides a high-speed module that saves power, space, and costs
without sacrificing reliability and performance.
[0032] Suitable materials for the insulating base 110 include
ceramics such as alumina, beryllium oxide (BeO), and aluminum
nitride (AlN). The insulating base 110 includes an upper surface
120, a lower surface 130, and four substantially flat sidewalls 125
(only two of which are shown) extending downwardly from the upper
surface 120. The thickness of the insulating base 110 may be
approximately 1 mm. Of course, it should be understood that the
insulating base 110 could be thicker or thinner as desired.
[0033] As shown, both the upper and lower surfaces 120, 130 of the
insulating base 110 are substantially planar. It is well-known that
mounting techniques using planar substrates such as, for example,
pick-and-place techniques are well-suited to high-volume
manufacturing. In addition, because overall mechanical stability is
directly related to the stability of the base 110, the
substantially planar upper surface 120 of the optoelectronic
package 100 provides good mechanical stability. Furthermore, by
using ceramics for the base 110, optimal mechanical stability may
be obtained.
[0034] Due to the polygonal shape (e.g., square or rectangular) of
the insulating base 110, the contact at the mating, heat-conducting
surface of the insulating base 110 and a commercially available
square or rectangular-shaped heat dissipating device (not shown) is
improved. Preferably, the heat dissipating device is a heat sink.
However, other types of heat dissipating devices such as, for
example, heat pipes are equally applicable. In this manner, the
polygonal shape of the insulating base 110 provides sufficient
thermal contact and coupling with a polygonal-shaped (e.g., square
or rectangular) heat sink, thereby improving the heat transfer
characteristics therebetween. In addition, the substantially flat
sidewalls 125 provide a greater heat dissipation area because the
heat generated by the optoelectronic and/or electrical components
housed within the package 100 may be conducted to the substantially
flat sidewalls 125. As a result, heat dissipation efficiency is
increased. Furthermore, the high thermal conductivity of the
ceramic material of the insulating base 110 makes it possible to
efficiently extract the heat produced by the optoelectronic device
and/or electrical components.
[0035] Besides the thermal advantage of using an insulating
substrate header, the insulating substrate header provides for
better impedance matching. In order to reduce insertion loss and
back reflection, it is important for an optoelectronic device to
have an impedance that matches its interfacing electrical
components, such as a transimpedance amplifier (TIA) or other
electronic component. By using an insulating substrate header, such
as a multi-layer ceramic base, the impedance of the TO can can be
designed to have the desired impedance. In contrast, in prior art
devices that use a metal header and wire bonds, it is more
difficult to design a matching impedance particularly at high
speeds.
[0036] With reference to FIG. 2, a first plurality of holes or vias
115 is formed through the insulating base 110 by, for example, a
mechanical drilling process or a laser machining process. In one
example, the diameter of each hole 115 is half the thickness of the
insulating base 110. Of course, the diameter could be larger or
smaller than this diameter as desired. In addition, the spacing
between two holes 115 is approximately twice the diameter of the
holes 115. The holes 115 are adapted to conduct welding current
from the metal cap 150 to the insulating base 110 during a welding
operation to hermetically seal the metal cap 150 to the insulating
base 110. As shown, each of the plurality of holes 115 is generally
circular in shape, and is formed into a generally circular
configuration. However, the holes 115 may have other shapes as
well. For example, the holes 115 may be oval, square, rectangular,
octagonal, etc. in shape. Likewise, the plurality of holes 115 may
be formed into other geometric configurations such as, for example,
ovals, squares, rectangles, etc. Lastly, although twelve holes 115
are shown, any desired number of holes 115 may be provided.
[0037] A second plurality of holes or vias 117 may be formed
through the insulating base 110, and located within an inner region
of the first plurality of holes 115. The second plurality of holes
or signal vias 117 are adapted to electrically connect signals from
the upper surface 120 of the insulating base 110 to the lower
surface 130 of the insulating base 110.
[0038] The insulating base 110 also includes a conductive material
layer (not shown), deposited on both the upper and lower surfaces
120, 130 of the insulating base 110. The conductive material layers
may be deposited using physical vapor deposition (PVD) techniques
such as evaporation, sputtering, screen printing, or other suitable
processes. The conductive material may include a metal such as, for
example, copper, gold, tin, a copper/tin alloy, tungsten, lead,
nickel, palladium, or any other similar metal. In one example, the
metal layers on each of the upper and lower surfaces 120, 130 of
the insulating base 110 include a thick film metallization that is
capable of being soldered or brazed. In other words, the metal
layers include films with a thickness of greater than approximately
10 .mu.m. If desired, however, the metal layers may include a thin
film metallization. In any event, the thickness of the metal layers
is based, in part, on the requirements for brazing or soldering of
the metal sealing member 140 to the upper surface 120 of the
insulating base 110.
[0039] The first plurality of holes 115 and the second plurality of
holes 117 are, likewise, substantially filled with the same or
similar electrically conductive material as that deposited on the
upper and lower surfaces 120, 130 of the insulating base 110. For
example, the first plurality of holes 115 and the second plurality
of holes 117 may be filled with flowable solder, or screen-filled
using a paste of conductive material such as, for example, copper
and/or tungsten. A metal contact member (not shown) may be attached
to the lower metallized surface 130 of the insulating base 110 via
an adhesive layer (e.g., a brazing paste or a solder preform layer)
disposed between the metal contact member and the lower surface 130
of the insulating base 110. The metal contact member is adapted to
contact each of the first plurality of filled holes 115 at the
lower surface 130 of the insulating base 110. The metal contact
member may be sufficiently etched, grinded, and/or polished to
provide a substantially flat contact surface at the lower surface
130 of the insulating base 110.
[0040] The insulating base 110 may be configured as a multilayer
substrate having a plurality of levels. Multiple metal layers may
be provided at each of the plurality of levels, and joined together
(e.g., laminated) on the insulating base 110. In this
configuration, the second plurality of holes 117 may be formed in
the layers so that signals can be communicated between the adjacent
layers.
[0041] The metal layers deposited on the upper and lower surfaces
120, 130 of the insulating base 110 may be patterned to include a
plurality of electrically conductive paths or traces (not shown).
The metallized pattern on the upper and lower surfaces 120, 130 and
any of the intermediate layers of the insulating base 110 may be
formed by photolithography, stamping, electroplating, etching,
electro-discharge machining, or other similar techniques. The
optical devices and/or electrical components may be mounted to and
electrically connected to the conductive metallized pattern on the
upper surface 120 of the insulating base 110.
[0042] At least one electrical lead 170 is attached, such as by
brazing, to the lower metallized surface 130 of the insulating base
110, and is connected to the upper metallized surface 120 of the
insulating base 110 via the second plurality of filled holes 117.
The electrical leads 170 are adapted to communicate signals from
the optoelectronic and/or electrical components housed inside the
package 100 to components located external to the package 100 on a
printed circuit board, for example. The leads 170 may be circular
or rectangular in cross-section. Preferably, the electrical leads
170 are arranged as an array of leads 170, and may be located at
any location on the lower surface 130 of the insulating base 110.
The insulating base 110 may be operatively coupled to sockets in
the printed circuit board (not shown) via the electrical leads 170.
Alternatively, the insulating base 110 may be operatively coupled
to the printed circuit board using solder connections such as, for
example, ball grid array connections and/or a flex circuit.
[0043] With reference to FIGS. 2 and 3, the metal sealing member
140 may be sealably attached to the upper metallized surface 120 of
the insulating base 110 using an adhesive layer 149 disposed
between the metal sealing member 140 and the upper surface 120 of
the insulating base 110. As shown in FIG. 3, the metal layer on the
upper surface 120 of the insulating base 110 may be etched,
grinded, and/or polished to provide a substantially flat contact
surface for attachment of the metal sealing member 140, also called
metal ring frame 140. The metal sealing member 140, which may be
formed of Kovar.TM. or any other similar metallic material,
includes a top wall 141, a bottom wall 142, an outer wall 143, and
an inner wall 144. Preferably, the metal sealing member 140 is a
sealing ring having a generally circular cross-sectional shape
between the outer wall 143 and inner wall 144. However, the metal
sealing member 140 may have other shapes as well. For example, the
metal sealing member 140 may have a generally oval cross-sectional
shape between the outer wall 143 and inner wall 144. Still further,
the metal sealing member 140 may have a polygonal shape such as a
rectangular cross-sectional shape or a square cross-sectional shape
between the outer wall 143 and inner wall 144. Additionally, the
outer wall of the metal sealing member 140 may extend to the upper
surface perimeter of the insulating base 110, as shown in FIG. 11.
The metal sealing member 140 may also extend over one or more side
walls of the insulating base 110, as shown in FIG. 17.
[0044] The adhesive layer 149, which is basically a wafer-sized
prefabricated bond, is disposed on the upper surface 120 of the
insulating base 110. The adhesive layer 149 may include a brazing
paste of, e.g., copper and/or silver, or a solder preform layer 149
formed of metal (e.g., a gold or tin preform). The bottom wall 142
of the metal sealing member 140 is then positioned on the adhesive
layer 149 on the upper surface 120 of the insulating base 110.
Through appropriate use of a brazing heat operation, the metal
sealing member 140 is bonded to the upper surface 120 of the
insulating base 110.
[0045] Referring back to FIG. 1, a cover 150, such as one formed of
Kovar.TM. or other suitable metal, is then hermetically sealed to
the top wall 141 of the metal sealing member 140 to contain and
fully enclose the optoelectronic and electrical components mounted
to the upper surface 120 of the insulating base 110, and to thereby
seal off the module package 100. Use of such a hermetically sealed
cover 150 acts to keep out moisture, corrosion, and ambient air to
therefore protect the generally delicate optoelectronic and
electrical components housed inside the package 100.
[0046] Typically, the metal cap 150 is circular or cylindrical in
shape. However, the metal cap 150 may have a square or rectangular
shape instead. The metal cap 150 may include a lower peripheral
edge or rim 155 having a shape that is generally complementary to
the shape of the metal sealing member 140 so that the rim 155 of
the metal cap 150 can be hermetically sealed to the top wall 141 of
the metal sealing member 140. For example, the lower rim 155 of the
metal cap 150 may be generally circular when the metal sealing
member 140 has a generally circular cross-sectional shape between
the outer wall 143 and inner wall 144. Likewise, the lower rim 155
of the metal cap 150 may be generally rectangular when the metal
sealing member 140 has a generally rectangular cross-sectional
shape between the outer wall 143 and inner wall 144. By enclosing
and hermetically sealing the metal cap 150 to the insulating base
110, the optoelectronic and electrical components housed within the
package 100 are kept in a controlled gaseous environment that
protects them and prevents degradation in their performance and/or
lifetime.
[0047] As shown in FIG. 1, the rim 155 of the metal cap 150 may be
set back from the outer wall 143 of the metal sealing member 140.
Alternatively, the rim 155 of the metal cap 150 may be
substantially flush with the outer wall 143 of the metal sealing
member 140. As discussed in more detail below, a hermetically
sealed attachment of the metal cap 150 to the metal sealing member
140 on the insulating base 110 may be established by, for example,
seam welding, laser welding, resistance welding, soldering,
etc.
[0048] The metal cap 150 includes a transparent portion 160 such
as, for example, a flat glass window, ball lens, aspherical lens,
or GRIN lens. The optoelectronic components are mounted to the
insulating base 110 within the package 100 in a manner such that
light is able to pass to or from them through the transparent
portion 160. Typically, the transparent portion 160 is formed of
glass or plastic. To avoid effects on the optoelectronic and
electrical components housed within the package 100, the
transparent portion 160 of the cover 150 may be provided with an
antireflection coating to reduce optical loss and back-reflection.
In one embodiment, the transparent portion 160 of the metal cap 150
is aligned with the beam emergence side of the optoelectronic
device 200, such as a light generation device, so that the
optoelectronic device 200 can be optically coupled to external
components such as, for example, an optical fiber or any element
that requires optical alignment with other optical devices, through
the transparent portion 160. Alternatively, the optoelectronic
device 200 may be a photodetector, in which case, the
optoelectronic device 200 is aligned to receive an optical signal
through the transparent portion 160 of the metal cap 150.
[0049] Referring to FIGS. 4a and 4b, the insulating base 110 may
form the bottom of the package 100, thus making a completely
self-contained package 100. Alternatively, the insulating base 110
may include one or more submounts 210 that carry the optoelectronic
and/or electrical components. In other words, the optoelectronic
and/or electrical components may be mounted directly to the upper
surface 120 of the insulating base 110 (FIG. 4a), or may be mounted
to submounts 210 that are attached to the insulating base 110 (FIG.
4b).
[0050] With particular reference to FIG. 4a, an active optical
device 200 and its associated integrated circuit chip 220, a
passive optical device 300, and various other electrical components
310, 320 are located within an inner region of the metal sealing
member 140. As is well-known, these optical and/or electrical
components may be mounted to the upper surface 120 of the
insulating base 110 by pick-and-place techniques commonly used in
the electronics industry, and attached to the insulating base 110
by adhesive bonding, soldering, gluing, or other similar method.
Because the insulating base 110 is substantially planar, the
pick-and-place automation may use relatively simple machine vision
for accurate placement and alignment of the various components.
[0051] As shown in FIG. 4a, the insulating base 110 serves as both
a mounting surface for the various optical and/or electrical
components as well as the bottom or header of the package 100
itself. As a result, a higher-performance and cost-effective
enclosure may be realized. In particular, the package 100 may be
assembled in a relatively uncomplicated manner by simply attaching
the metal cap 150 to the base 110 upon which the optoelectronic
components are mounted to thereby create a hermetic enclosure.
Thus, the manufacturing process may be automated, and requires a
minimum number of materials and manufacturing steps.
[0052] To ensure low parasitic effects (e.g., inductance,
capacitance, and/or resistance) and reduced interconnect lengths
for enhanced electrical performance, it is advantageous to mount
the active optical device 200 and the integrated circuit 220 close
to each other inside the package 100. As a result, higher
performance may be achieved in smaller packages at low cost. This
configuration is particularly advantageous for high-speed
applications because extraneous wiring that may limit the
high-speed operation of the optoelectronic package 100 is
eliminated.
[0053] Optically active devices 200 include any well known or
future devices that generate light when stimulated, that sense
light, convert light to electrical signals, or that condition
light. For example, active optical devices 200 may include light
emitters (e.g., vertical cavity surface-emitting lasers (VCSEL),
Fabry-Perot (F-P) lasers, distributed-feedback (DFB) lasers, light
emitting or sensing diodes, and the like), light sensors (e.g.,
photodetectors), and optical modulators. The integrated circuit 220
is any chip suitable for applying an electrical signal to the
active optical device 200 to activate and control the device 200
such as, for example, a microprocessor, a driver chip for a
transmitter device, or a transimpedance amplifier chip for a
receiver device. Implementation of the microprocessor, driver, or
transimpedance amplifier integrated circuit 220 is well known, and
thus will not be further described.
[0054] In addition to the active optical device 200 and its
associated integrated circuit 220, other optical and/or electrical
components such as a mirror 300, thermistor 310, capacitor 320,
etc. may be mounted to the insulating base 110 and housed inside
the package 100. It is to be understood, however, that other
optical and/or electrical devices besides those mentioned above may
be mounted to the insulating base 110 as well.
[0055] As shown in FIG. 4a, the path of rays of the active optical
device 200, e.g., a diode laser, radiates in a direction that is
parallel to the plane of the upper surface 120 of the insulating
base 110. Because the laser light should pass through the
transparent portion 160 located at the top of the metal cap 150,
the active optical device 200 is routed through a passive optical
device, e.g., a mirror 300, located at the beam emergence side of
the active optical device 200. The mirror 300 functions to deflect
the light incident onto the mirror 300 so that the light from the
diode laser 200 is able to pass through the transparent portion 160
of the metal cap 150. Although the electrical components 310, 320
are shown as being housed inside the optoelectronic package 100 in
FIG. 4a, one or more of the electrical components 310, 320 may be
located external to the optoelectronic package 100.
[0056] In a second embodiment shown in FIG. 4b, one or more
pedestals 210 may be mounted to the upper surface 120 of the
insulating base 110. The pedestal 210 may be made of a high
thermally conductive material such as, for example, copper
tungsten, aluminum nitride, beryllium oxide, and boron nitride. The
pedestal 210 may be mounted to the upper surface 120 of the
insulating base 110 by, for example, soldering, brazing, gluing,
etc., or may even be an integral, raised portion of the insulating
base 110 itself. The pedestal 210 may include wraparound metal
paths or traces, and conducting vias formed therein. The wraparound
metal paths and conducting vias connect signals from components
mounted to the pedestal 210 to components mounted to the insulating
base 110. In addition, the pedestal 210 may be configured as a
multilayer submount 210 having a plurality of levels laminated and
electrically-connected together. A separate submount (not shown),
such as a ceramic or silicon to carry optical or electrical
components, may be mounted on the pedestal 210, although the scope
of the invention is not limited in this respect.
[0057] In this embodiment, the active optical device 200 is mounted
to the pedestal 210 and oriented such that the path of rays
radiates in a direction that is perpendicular to the plane of the
upper surface 120 of the insulating base 110. The metal cap 150 is
then attached to the insulating base 110 with the transparent
portion 160 over the beam emergence side of the active optical
device 200. Although only one optical device 200 is shown mounted
to the pedestal 210 in FIG. 4b, it is to be understood that other
optical and/or electrical components may be premounted to the
submount 210 to form a subassembly. This subassembly may be
incorporated with the integrated circuit 220 inside the
optoelectronic package 100 to form a complete module. It should be
noted that an optical or optoelectronic device "mounted on the
insulating base" should be interpreted to mean mounted on the
insulating base directly or mounted indirectly to the insulating
base via one or more submounts.
[0058] With reference to FIGS. 5-7, a welding apparatus 500 adapted
to weld the metal cap 150 to the metal sealing member 140 on the
insulating base 110 to form the optoelectronic package 100 is
disclosed. As shown in FIG. 5, the metal cap 150 is abutted against
the top wall 141 of the metal sealing member 140. The lower
peripheral rim 155 of the metal cap 150 is adapted to mate with the
top wall 141 of the metal sealing member 140. A hermetic airtight
seal is obtained by welding the lower rim 155 of the metal cap 150
to the top wall 141 of the metal sealing member 140.
[0059] During the welding process, the two metallic surfaces of the
rim 155 of the metal cap 150 and the metal sealing member 140 are
brought into contact with heat and pressure. This results in the
sharing of atoms between the metallic components to form a
mechanical bond. Resistance welding is a well-known welding
technique for joining two metallic components. In its simplest
form, resistance welding is the fusion of metals by controlled heat
or current and, in some cases, pressure or force. During a
resistance welding process, fusion of metals is produced by the
heat obtained from resistance of the metallic components to
electric current in a circuit or current path 430 of which the
metallic components are a part, and by the application of pressure
to the metallic components by electrodes. The current path 430
travels through the metallic components between a pair of opposed
electrodes 410, 420. The advantages of resistance welding include
its versatility and the speed and ability to automate the welding
process. Specifically, with one-shot projection resistance welding,
simplified to "projection welding" within this application, the
weld is completed in a single shot within milliseconds.
[0060] FIG. 6 illustrates an exemplary welding apparatus 500
adapted to weld the metal cap 150 to the metal sealing member 140
attached to the insulating base 110. At least two electrodes 410,
420 are provided to hold the metallic components together during
the welding process. Specifically, during a resistance welding
process, two metallic components (i.e., the metal cap 150 and the
metal sealing member 140 attached to the insulating base 110) are
compressed together between the upper and lower electrodes 410, 420
for a predetermined period of time. Either the first electrode 410
or the second electrode 420 may apply the necessary force to weld
the metallic components together.
[0061] Upon reaching the desired force, a predetermined current is
applied to the metal cap 150, the metal sealing member 140, and the
first plurality of filled holes 115 formed in the insulating base
110 via the first and second electrodes 410, 420. As shown in FIG.
7, the first and second electrodes 410, 420 are adapted to supply
the required current through the metal cap 150, the metal sealing
member 140, and the first plurality of filled holes 115 formed in
the insulating base 110 for a predetermined period of time to form
a weld nugget to weld the metallic components together. The
amplitude and time of the welding current may be controlled by a
control system (not shown).
[0062] The resistance of the metal cap 150 and metal sealing member
140 attached to the insulating base 110 produces sufficient heat to
create a fusion between the metals, i.e., until a liquid molten
pool of material from the metals forms at an interface between the
metal cap 150 and the metal sealing member 140 attached to the
insulating base 110. A predetermined amount of force is applied to
control the molten area and ensure proper union.
[0063] The first and second electrodes 410, 420 maintain the metal
cap 150 in contact with the insulating base 110 during the welding
operation as the weld nugget is formed. Particularly, after the
current is applied to the metal cap 150, the metal sealing member
140, and the first plurality of filled holes 115 formed in the
insulating base 110, the components are allowed to cool so that the
liquid molten pool at the interface of the components solidifies to
form the weld nugget.
[0064] The welding parameters, i.e., the force, current, time,
etc., may depend on the thickness of the metallic components being
welded together, the resistance of the current path 430, the size
of the desired weld nugget, the melting temperature(s) of the
metallic components, and so forth. Moreover, any device capable of
providing a welding current may be used such as, for example, a
control system, a capacitor discharge system, etc. Furthermore,
although the metal cap 150 is welded to the insulating base 110
using projection resistance welding due to its ability to produce
high-volume output, other welding techniques could be used such as,
for example, seam welding, laser welding, and other types of
hermetic welding. Still further, any of a variety of welding
structures capable of providing movement of one or more electrodes
to provide pressure to components may be utilized such as, for
example, a rocker arm welder, C-frame welder, press welder,
automatic welder, robotic welder, etc.
[0065] FIG. 8 illustrates a first example of an alternative welding
apparatus that does not supply current through metallic vias in the
insulating base to effect the hermetic seal. Instead, a first
electrode 610 is applied to the metal cap 150, and a second
electrode 620 is applied to the metal sealing member 140. In one
embodiment, the first and second electrodes are concentric and may
be separated by an air gap or an insulating material 630. If active
alignment of the optoelectronic package prior to projection
resistance welding is desired, this may be achieved by optically
aligning channel 650 with the transparent portion 160 of the metal
cap 150, the optoelectronic device 200 and/or mirrors inside the
optoelectronic package.
[0066] In one embodiment, the upper surface 120 of the insulating
base 110 includes a conductive material layer (not shown) as was
described with respect to FIG. 2. A metal sealing member 140 sits
above the upper surface 120 of the insulating base 110, and an
adhesive layer 149 may be disposed between the metal sealing member
140 and the upper surface 120. In one embodiment, the metal cap 150
may include on the underside of its rim 155 a sharpened point of
contact, the projector 157, that rests upon the metal sealing
member 140, as shown in cross section in FIG. 19. The projection
157 provides a larger resistance at the contact point than would a
contact between two flat surfaces. During projection welding the
projection deforms to produce a weld nugget.
[0067] During welding a pressure of up to 250 pounds is applied.
The insulating base 110 may comprise ceramic which is brittle and
may crack if pressure is applied directly to it. The metal sealing
member 140 is ductile and reduces the stress on the ceramic. The
metal sealing member 140 helps to provide a uniform weld current
for a uniform hermetic seal.
[0068] FIGS. 9, 10 and 11 illustrate a second example of a welding
apparatus that supplies current between the metal cap 150 and the
metal sealing member 140 to effect a hermetic seal. In this
embodiment, a first electrode 720 is applied to the metal cap 150,
and a second electrode 730 is applied to the metal sealing member
140. FIG. 10 shows force being applied to the first electrode 720
to hold the metal cap 150, metal sealing member 140, and insulating
base in place during the welding process. In one case a support
base 740 provides a counter force to that applied by the first
electrode 720.
[0069] The second electrode 730 may comprise multiple fingers that
contact the metal sealing member 140 at multiple points. For
example, FIG. 11 shows an example of corners of the metal sealing
member 140 as being possible points 750 at which the second
electrode 730 may be applied. In one embodiment, the fingers of the
second electrode are independently positionable. Moreover, the
current provided to the multiple fingers may be independently
adjustable.
[0070] FIGS. 12A and 12B are exploded views illustrating a third
example of a welding apparatus that supplies current between the
metal cap 150 and the metal sealing member 140 to effect a hermetic
seal. A first electrode 820 is applied to the metal cap 150, and a
second electrode 830 is applied to the metal sealing member 140. In
one embodiment, the second electrode 830 has multiple fingers and
contacts the metal sealing member 140 at locations that
substantially form a perimeter that encircles the metal cap
150.
[0071] FIG. 12B shows more clearly a single finger of the second
electrode 830. Although the entire second electrode could be
implemented as a single piece, using independently positionable
multiple fingers may provide better uniform contact with the metal
sealing member 140. Current may be independently adjustable to the
multiple fingers as previously mentioned with respect to FIGS. 9,
10 and 11.
[0072] FIG. 13A illustrates a fourth example of a welding apparatus
that supplies current between the metal cap 150 and the metal
sealing member 140 to effect a hermetic seal. A first electrode 920
is placed on the metal cap 150, and multiple fingers of a second
electrode 930 are placed against side walls of the metal sealing
member 140.
[0073] FIG. 13B shows more clearly a single finger of the second
electrode 930. In one embodiment, a rubber surface 932 lines a
bottom face of the finger. The rubber surface 932 provides a
non-conductive cushion that helps protect the insulating base 110
from applied stress and provides a support that rests upon support
base 940 to help position the finger. In one embodiment, current in
each of the multiple fingers may be controlled independently to
yield a uniform current for the hermetic welding.
[0074] FIG. 14 illustrates another embodiment of a TO can suitable
for hermetic welding. In this embodiment, the metal sealing member
140 overhangs the top surface perimeter of the insulating base 110.
In one case the metal sealing member 140 overhangs the top surface
perimeter of the insulating base 110 at least partially over each
of the side edges of insulating base 110. This structure allows for
an electrode to be applied from the bottom side 980 of the
overhanging portion of the metal sealing member 140, thus allowing
current projection welding machines to be used with new tooling.
FIG. 15 shows an example cross section of a first electrode 1020
placed over the metal cap 150, and a second electrode 1030 holding
the optoelectronic package from below and making contact along the
bottom periphery of the metal sealing member 140. As described
previously, current is supplied between the two electrodes to form
a hermetic welding between the metal cap 150 and the metal sealing
member 140.
[0075] FIG. 16 illustrates multiple heat sinks 1120 placed in
proximity to the optoelectronic package to remove heat from the
optoelectronic package. In one embodiment, flat side walls 1122 of
the insulating base 110 provide easy access for coupling the heat
sinks to the optoelectronic package. In one embodiment, in order to
use existing projection welding machines, the volume of insulating
base is reduced to allow the metal frame to overhang the insulating
base. However, maintaining a large insulating base is desirable to
help with heat dissipation.
[0076] FIG. 17 illustrates in exploded view another embodiment of a
metal frame 140 that overhangs the insulating base. In this
example, the metal frame overhangs the insulating base in two
directions by extending at least partially around two opposite side
surfaces 1230 of the insulating base. To projection weld in this
embodiment, a first electrode may be placed on the metal cap, and a
second electrode may be placed on the bottom surfaces 1240 of the
metal frame 140 that overhang the sides 1230 of the insulating base
110. The other two opposite sides 1250 of the insulating base 110
that are not blocked by an overhang of the metal frame 140 allow
easy access for coupling the insulating base 110 with heat sinks
(not shown).
[0077] FIG. 18 is an example of a transponder housing 1200 for one
or more TO cans. In one embodiment, a first TO 1212 can serves as a
receiver having a photodiode internally, and a second TO 1210 can
serves as a transmitter having a light source, such as a laser
diode, internally. In one embodiment, the TO cans have insulating
bases 1220 with square edges that abut against the transponder
housing such that the transponder housing serves as a heat sink for
the TO cans. In another embodiment, the transponder housing may
have a different contour shape, such as a curved shape, to match
that of the TO cans.
[0078] FIGS. 20-21 illustrate another example of a TO can
embodiment that uses conductive vias similar to that described with
respect to FIGS. 1-7 for hermetically sealing the TO can. FIG. 20
shows in exploded view a schematic diagram of the components of the
TO can. In one embodiment, the top surface and the bottom surface
of the insulating base 110 are metallized, and a metal contact
member (not shown) may beattached to the lower metallized surface
130 as was described with respect to FIGS. 1-7. In this embodiment,
however, a metal sealing member 140 is not employed. The metal cap
150 is placed onto a solder preform 149, such as AuSn, that is
placed on the insulating base 110.
[0079] The metal cap 150 is projection welded onto the metallized
top surface of the insulating base 110. Since the melting point of
the solder preform is lower than that of steel, less welding
current is needed. As a result, the heat in the conductive vias is
reduced and the risk to break the insulating base is lowered. Since
the heating is local, the same type of solder can be used inside
the module.
[0080] The embodiment of FIG. 18 differs from that described with
respect to FIGS. 1-7 in that a larger number of conductive vias 15
may be used, and the conductive vias may have a smaller diameter so
that the resistance of the conductive vias is higher, and heats
more readily. The rim 155 of the metal cap may be wider to provide
a larger wetting surface for the solder interface, and the metal
cap may lack the projection 157 shown in FIG. 19.
[0081] FIG. 21 shows first electrode 1310 and second electrode 1320
coupled to the TO can of FIG. 20. Whereas the embodiment of FIGS.
1-7 used a high current to meld the projection of the metal cap
whose melting point may be over 1400 C, e.g., for steel, the solder
preform may have a melting point around 300 C so a smaller current
is used to melt the solder preform. The lower current is less
likely to burn the material filling the conductive vias and break
the insulating base, as may be an issue with the high currents for
the embodiment of FIGS. 1-7. In the current embodiment, the
conductive vias should be as dense as possible to provide uniform
current density through the solder interface.
[0082] The optoelectronic package 100 of the present disclosure may
be produced in an automated batch process that is similar to the
batch processes used in manufacturing integrated circuits. A large
wafer containing many complete optoelectronic packages 100 is
fabricated and then cut into individual modules. The planarity of
the upper surface 120 of the insulating base 110 enables placement
of the optoelectronic elements using a high-precision
pick-and-place machine equipped with two-dimensional (2D) machine
vision. Using such automated pick-and-place techniques, the number
of active alignments may be reduced. In addition, such a package
may be manufactured inexpensively and in an automated method.
[0083] In sum, the optoelectronic package 100 of the present
disclosure is advantageous in that it may be easily assembled in a
small footprint wafer-scale assembly that reduces manufacturing
materials, and which may be mass-produced at low cost. In addition,
the package 100 integrates conventional "TO-style" metal caps 150
with an insulating base 110 having a relatively high degree of
thermal conductivity so that the integrated circuit 220 may be
mounted closer to its associated optical device 200 within the
package 100. As a result, multiple optoelectronic packages 100 may
be manufactured cost-effectively, while offering the simultaneous
advantages of high-speed electrical operation, adaptability to
batch processing, hermeticity, effective heat sinking, and high
mechanical stability.
[0084] In the foregoing description, the disclosed structures and
manufacturing methods have been described with reference to
exemplary embodiments. It will, however, be evident that various
modifications and changes may be made thereto without departing
from the broader spirit and scope of this disclosure. The above
specification and figures accordingly are to be regarded as
illustrative rather than restrictive. It is therefore intended that
the present disclosure be unrestricted by the foregoing description
and drawings, except as may appear in the following appended
claims.
* * * * *