U.S. patent application number 10/923814 was filed with the patent office on 2005-05-19 for material processing system and method.
This patent application is currently assigned to LEO Elektronenmikroskopie GmbH. Invention is credited to Hoffrogge, Peter, Koops, Hans W.P..
Application Number | 20050103272 10/923814 |
Document ID | / |
Family ID | 34575346 |
Filed Date | 2005-05-19 |
United States Patent
Application |
20050103272 |
Kind Code |
A1 |
Koops, Hans W.P. ; et
al. |
May 19, 2005 |
Material processing system and method
Abstract
A material processing system for processing a work piece is
provided. The material processing is effected by supplying a
reactive gas and energetic radiation for activation of the reactive
gas to a surrounding of a location of the work piece to be
processed. The radiation is preferably provided by an electron
microscope. An objective lens of the electron microscope is
preferably disposed between a detector of the electron microscope
and the work piece. A gas supply arrangement of the material
processing system comprises a valve disposed spaced apart from the
processing location, a gas volume between the valve and a location
of emergence of the reaction gas being small. The gas supply
arrangement further comprises a temperature-adjusted, especially
cooled reservoir for accommodating a starting material for the
reactive gas.
Inventors: |
Koops, Hans W.P.;
(Ober-Ramstadt, DE) ; Hoffrogge, Peter;
(Oberkochen, DE) |
Correspondence
Address: |
BURNS DOANE SWECKER & MATHIS L L P
POST OFFICE BOX 1404
ALEXANDRIA
VA
22313-1404
US
|
Assignee: |
LEO Elektronenmikroskopie
GmbH
Oberkochen
DE
NAWOTEC GmbH
Rossdorf
DE
|
Family ID: |
34575346 |
Appl. No.: |
10/923814 |
Filed: |
August 24, 2004 |
Related U.S. Patent Documents
|
|
|
|
|
|
Application
Number |
Filing Date |
Patent Number |
|
|
10923814 |
Aug 24, 2004 |
|
|
|
PCT/EP03/01923 |
Feb 25, 2003 |
|
|
|
Current U.S.
Class: |
118/723EB |
Current CPC
Class: |
H01J 2237/31732
20130101; H01J 2237/166 20130101; H01J 2237/31744 20130101; H01J
2237/162 20130101; H01J 37/3056 20130101; H01J 2237/006
20130101 |
Class at
Publication: |
118/723.0EB |
International
Class: |
C23C 016/00 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 25, 2002 |
DE |
102 08 043.7 |
Claims
The invention claimed is:
1. A material processing system having at least one gas supply for
supplying a reactive gas to a location of reaction, the gas supply
comprising: a tube having a first inner cross-section; a valve body
which can be reciprocated within the tube between a first position
in which a gas flow through the tube is allowed and a second
position in which the gas flow through the tube is substantially
blocked; and a hollow needle having an inlet end coupled to the
tube and an outlet end; wherein the hollow needle has a second
inner cross-section in a portion of its outlet end which is smaller
than the first inner cross-section, and wherein a volume of a
coherent gas space, which is defined by at least the hollow needle,
the inner cross-section of the hollow needle at the outlet end
thereof and the valve body in its second position, fulfills the
following relation: V<c*A*l, wherein A is an area of the inner
cross-section of the hollow needle at the outlet end thereof, l is
a distance between the outlet end of the hollow needle and the
valve body in its second position, and c is a constant less than
3.
2. The material processing system according to claim 1, wherein the
constant is less than 1.5.
3. The material processing system according to claim 1, wherein the
constant is less than 1.2.
4. The material processing system according to claim 1, wherein the
constant is less than 1.1.
5. The material processing system according to claim 1, wherein an
outer diameter of the hollow needle is smaller than an inner
diameter of the tube.
6. The material processing system according to claim 1, wherein the
gas supply further comprises a reservoir communicated with the
tube, for accommodating a starting material for generating the
reactive gas, and a temperature-adjusting apparatus for adjusting a
temperature of the starting material.
7. The material processing system according to claim 6, wherein the
temperature-adjusting apparatus is configured to adjust the
temperature of the starting material to a temperature which is
lower than a temperature of the hollow needle.
8. The material processing system according to claim 1, wherein the
gas supply further comprises a heating device for supplying heat to
at least one of the hollow needle and the tube.
9. The material processing system according to claim 6, wherein the
gas supply further comprises a pressure sensor for detecting a gas
pressure of the reactive gas, and a controller for controlling the
temperature-adjusting apparatus in dependence of the detected gas
pressure.
10. The material processing system according to claim 1, comprising
first and second gas supplies, wherein a reservoir of the first gas
supply accommodates a first starting material, wherein a reservoir
of the second gas supply accommodates a second starting material
which is different from the first starting material, and wherein a
gas conductance of the hollow needle of the first gas supply is
different from a gas conductance of the hollow needle of the second
gas supply.
11. The material processing system according to claim 10, wherein,
at a temperature of 20.degree. C., the first starting material has
a higher vapor pressure than the second starting material, and
wherein the gas conductance of the hollow needle of the first gas
supply is smaller than the gas conductance of the hollow needle of
the second gas supply.
12. The material processing system according to claim 1, further
comprising a processing chamber; an electron microscope, having an
electron source for generating an electron beam; at least one
focusing lens for focusing the electron beam in the object plane
within the processing chamber, and at least one electron detector
for detecting electrons emanating from the object plane; and a work
piece mount configured for mounting a work piece to be processed in
the processing chamber such that a surface portion of the work
piece substantially coincides with the object plane of the electron
microscope; wherein the gas supply arrangement is configured to
supply at least one reactive gas to a region close to the surface
of the work piece, wherein the reactive gas can be induced to react
with the work piece by means of the focused electron beam.
13. The material processing system according to claim 12, wherein
the electron microscope comprises at least first and second
pressure diaphragms, each having an aperture for the electron beam
to pass therethrough, wherein the first pressure diaphragm
partially separates a vacuum section of the processing chamber from
an intermediate vacuum section, wherein the second pressure
diaphragm partially separates the intermediate vacuum section from
a vacuum section accommodating the electron source, and wherein the
system further comprises a pumping arrangement having a first
vacuum pipe communicating the intermediate vacuum section with a
first vacuum pump of the pumping arrangement, and wherein a first
electron detector of the electron microscope is accommodated in the
intermediate vacuum section.
14. The material processing system according to claim 13, wherein a
focusing lens of the electron microscope disposed next to the
object plane is disposed between the first electron detector and
the object plane.
15. The material processing system according to claim 13, wherein
the first vacuum pump communicated with the intermediate vacuum
section for evacuating the intermediate vacuum section is a turbo
molecular pump, and wherein the pumping arrangement further
comprises a second vacuum pipe for communicating the processing
chamber with a second vacuum pump, and a third vacuum pipe for
communicating the vacuum section accommodating the electron source
with a third vacuum pump.
16. The material processing system according to claim 13, wherein a
component of the electron microscope disposed next to the object
plane has a substantially ring-shaped planar end face oriented
towards the object plane, wherein the electron beam traverses an
interior of the ring shape.
17. The material processing system according to claim 16, wherein
the work piece mount is configured to hold the work piece such that
the surface thereof is disposed at a distance of less than 100
.mu.m from the planar end face.
18. The material processing system according to claim 13, wherein a
component of the electron microscope disposed next to the object
plane comprises a sealing to abut against the work piece.
19. The material processing system according to claim 18, wherein
the work piece mount is configured to bring the work piece into
engagement with the sealing and to release the work piece from its
engagement with the sealing.
20. The material processing system according to claim 19, further
comprising a valve to communicate a gas space defined by at least
an interior of the sealing with the vacuum section of the
processing chamber.
21. The material processing system according to claim 13, wherein
the first pressure diaphragm is disposed between the object plane
and the focusing lens disposed closest to the object plane.
22. The material processing system according to claim 13, further
comprising a second electron detector disposed within the
processing chamber.
23. The material processing system according to claim 13, further
comprising an energy-resolving photon detector for detecting
photons emanating from the work piece.
24. A material processing system having at least one gas supply for
supplying a reactive gas to a location of reaction, the gas supply
comprising: a tube; a valve body which can be reciprocated within
the tube between a first position in which a gas flow through the
tube is allowed and a second position in which the gas flow through
the tube is substantially blocked; a hollow needle having an inlet
end coupled to the tube and an outlet end; a reservoir communicated
with the tube, for accommodating a starting material for generating
the reactive gas; and a temperature-adjusting apparatus for
adjusting a temperature of the starting material within the
reservoir.
25. The material processing system according to claim 24, wherein
the temperature-adjusting apparatus is configured to adjust the
temperature of the starting material to a temperature which is
lower than a temperature of the hollow needle.
26. The material processing system according to claim 24, wherein
the gas supply further comprises a heating device for supplying
heat to at least one of the hollow needle and the tube.
27. The material processing system according to claim 24, wherein
the gas supply further comprises a pressure sensor for detecting a
gas pressure of the reactive gas, and a controller for controlling
the temperature-adjusting apparatus in dependence of the detected
gas pressure.
28. A material processing system comprising: a processing chamber;
an electron microscope, having an electron source for generating an
electron beam; at least one focusing lens for focusing the electron
beam in the object plane within the processing chamber, and at
least one electron detector for detecting electrons emanating from
the object plane; a work piece mount configured for mounting a work
piece to be processed in the processing chamber such that a surface
portion of the work piece substantially coincides with the an
object plane of the electron microscope; and a gas supply
arrangement configured to supply at least one reactive gas to a
region close to the surface of the work piece; wherein the electron
microscope comprises at least first and second pressure diaphragms,
each having an aperture for the electron beam to pass therethrough,
wherein the first pressure diaphragm partially separates a vacuum
section of the processing chamber from an intermediate vacuum
section, wherein the second pressure diaphragm partially separates
the intermediate vacuum section from a vacuum section accommodating
the electron source; and wherein the system further comprises a
pumping arrangement having a first vacuum pipe communicating the
intermediate vacuum section with a first vacuum pump of the pumping
arrangement, and wherein a first electron detector of the electron
microscope is accommodated in the intermediate vacuum section.
29. The material processing system according to claim 28, wherein a
focusing lens of the electron microscope disposed next to the
object plane is disposed between the first electron detector and
the object plane.
30. The material processing system according to claim 28, wherein
the first vacuum pump communicated with the intermediate vacuum
section for evacuating the intermediate vacuum section is a turbo
molecular pump, and wherein the pumping arrangement further
comprises a second vacuum pipe for communicating the processing
chamber with a second vacuum pump, and a third vacuum pipe for
communicating the vacuum section accommodating the electron source
with a third vacuum pump.
31. The material processing system according to claim 28, wherein a
component of the electron microscope disposed next to the object
plane has a substantially ring-shaped planar end face oriented
towards the object plane, wherein the electron beam traverses an
interior of the ring shape.
32. The material processing system according to claim 31, wherein
the work piece mount is configured to hold the work piece such that
the surface thereof is disposed at a distance of less than 100
.mu.m from the planar end face.
33. The material processing system according to claim 28, wherein a
component of the electron microscope disposed next to the object
plane comprises a sealing to abut against the work piece.
34. The material processing system according to claim 33, wherein
the work piece mount is configured to bring the work piece into
engagement with the sealing and to release the work piece from its
engagement with the sealing.
35. The material processing system according to claim 33, further
comprising a valve to communicate a gas space defined by at least
an interior of the sealing with the vacuum section of the
processing chamber.
36. The material processing system according to claim 28, wherein
the first pressure diaphragm is disposed between the object plane
and the focusing lens disposed closest to the object plane.
37. The material processing system according to claim 28,
comprising a second electron detector disposed within the
processing chamber.
38. A method for processing a work piece using a material
processing system having at least one gas supply for supplying a
reactive gas to a location of reaction, the gas supply comprising:
a tube having a first inner cross-section; a valve body which can
be reciprocated within the tube between a first position in which a
gas flow through the tube is allowed and a second position in which
the gas flow through the tube is substantially blocked; and a
hollow needle having an inlet end coupled to the tube and an outlet
end; wherein the hollow needle has a second inner cross-section in
a portion of its outlet end which is smaller than the first inner
cross-section, and wherein a volume of a coherent gas space, which
is defined by at least the hollow needle, the inner cross-section
of the hollow needle at the outlet end thereof and the valve body
in its second position, fulfills the following relation:
V<c*A*l, wherein A is an area of the inner cross-section of the
hollow needle at the outlet end thereof, l is a distance between
the outlet end of the hollow needle and the valve body in its
second position, and c is a constant less than 3; and wherein the
method comprises: taking an electron-microscopic image of a portion
of the work piece by directing an electron beam to a plurality of
locations within the portion and recording secondary electrons
emanating from the work piece in dependence of the locations to
which the electron beam is directed; determining at least one
location within the portion of the work piece where the material of
the work piece is to be removed or where material is to be
deposited on the work piece; supplying at least one reactive gas to
the portion of the work piece; and directing the electron beam to
the at least one predetermined location of the work piece to induce
the at least one reactive gas to react with the work piece.
39. The method according to claim 38, wherein the
electron-microscopic image is taken after the reaction has been
induced and, in dependence of the image taken, a further location
is determined within the portion of the work piece where material
is to be removed from or deposited on the work piece.
40. The method according to claim 38, wherein the work piece is a
mask for use in a lithographic process.
41. A method for processing a work piece using a material
processing system having at least one gas supply for supplying a
reactive gas to a location of reaction, the gas supply comprising:
a tube; a valve body which can be reciprocated within the tube
between a first position in which a gas flow through the tube is
allowed and a second position in which the gas flow through the
tube is substantially blocked; a hollow needle having an inlet end
coupled to the tube and an outlet end; a reservoir communicated
with the tube, for accommodating a starting material for generating
the reactive gas; and a temperature-adjusting apparatus for
adjusting a temperature of the starting material within the
reservoir; and wherein the method comprises: taking an
electron-microscopic image of a portion of the work piece by
directing an electron beam to a plurality of locations within the
portion and recording secondary electrons emanating from the work
piece in dependence of the locations to which the electron beam is
directed; determining at least one location within the portion of
the work piece where the material of the work piece is to be
removed or where material is to be deposited on the work piece;
supplying at least one reactive gas to the portion of the work
piece; and directing the electron beam to the at least one
predetermined location of the work piece to induce the at least one
reactive gas to react with the work piece.
42. A method for processing a work piece using a material
processing system, the material processing system comprising: a
processing chamber; an electron microscope, having an electron
source for generating an electron beam; at least one focusing lens
for focusing the electron beam in the object plane within the
processing chamber, and at least one electron detector for
detecting electrons emanating from the object plane; a work piece
mount configured for mounting a work piece to be processed in the
processing chamber such that a surface portion of the work piece
substantially coincides with the an object plane of the electron
microscope; a gas supply arrangement configured to supply at least
one reactive gas to a region close to the surface of the work
piece; wherein the electron microscope comprises at least first and
second pressure diaphragms, each having an aperture for the
electron beam to pass therethrough, wherein the first pressure
diaphragm partially separates a vacuum section of the processing
chamber from an intermediate vacuum section, wherein the second
pressure diaphragm partially separates the intermediate vacuum
section from a vacuum section accommodating the electron source;
and wherein the system further comprises a pumping arrangement
having a first vacuum pipe communicating the intermediate vacuum
section with a first vacuum pump of the pumping arrangement, and
wherein a first electron detector of the electron microscope is
accommodated in the intermediate vacuum section; and wherein the
method comprises: taking an electron-microscopic image of a portion
of the work piece by directing an electron beam to a plurality of
locations within the portion and recording secondary electrons
emanating from the work piece in dependence of the locations to
which the electron beam is directed; determining at least one
location within the portion of the work piece where the material of
the work piece is to be removed or where material is to be
deposited on the work piece; supplying at least one reactive gas to
the portion of the work piece; and directing the electron beam to
the at least one predetermined location of the work piece to induce
the at least one reactive gas to react with the work piece.
Description
[0001] This application is a continuation of International
Application No. PCT/EP03/01923 filed on Feb. 25, 2003, which
International Application was published by the International Bureau
on Aug. 28, 2003, and which was not published in English, the
entire contents of which are incorporated herein by reference. This
application also claims the benefit of DE 102 08 043.7 filed on
Feb. 25, 2002, the entire contents of which are incorporated herein
by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The invention relates to a material processing system, a
material processing method and a gas supply arrangement for the
same, especially for use in methods for processing materials by
material deposition from gases, such as CVD (Chemical Vapor
Deposition), or material removal involving supply of reactive
gases. In particular, the gas reaction resulting in a material
deposition or a material removal is induced by a beam of energy
which is directed to a portion of the work piece to be processed.
The beam of energy may in particular comprise an electron beam, a
photon beam or an ion beam.
[0004] 2. Brief Description of Related Art
[0005] Such a conventional system is known from U.S. Pat. No.
5,055,696. In this system, plural reactive gases are selectively
supplied to a processing chamber accommodating the work piece to be
processed. The reaction of the reactive gases with the work piece
is induced by a focused ion beam or photon beam. The thus processed
work pieces comprise integrated circuits or photo masks for
manufacture of integrated circuits.
[0006] The conventional system was found to be unsatisfactory as
regards the accuracy with which the processing of the work pieces
may be carried out. Equally, it showed that the type of the energy
beam and the gas supply used in this conventional system preclude a
further reduction of the dimensions of the smallest processable
structures.
SUMMARY OF THE INVENTION
[0007] The present invention has been accomplished taking the above
problems into consideration.
[0008] Accordingly, it is an object of the present invention to
provide a material processing system, a material processing method
and a gas supply arrangement applicable for such purposes which
allow to process the work piece to be processed with higher
precision.
[0009] According to a first aspect, the invention proceeds from a
gas supply arrangement comprising at least one gas supply for
supplying a reactive gas to a location of reaction in a material
processing system. In particular, the reactive gas comprises a
so-called "precursor gas" which may be activatable near the
location of reaction by means of an energy beam to induce at the
location of reaction a material deposition on the work piece to be
processed or a material removal from the work piece. To this end,
the supply of the reactive gas must be precisely controlled, i.e.,
a flow of reactive gas must be capable of being switched on and
off. To this end, the gas supply comprises a tube having a first
inner cross-section in which a valve body for controlling the gas
flow can be reciprocated between a first position in which it
releases the gas flow and a second position in which it
substantially blocks the gas flow. Coupled to the tube is a thin
tube or hollow needle which has a smaller cross-section than the
tube and serves to deliver the reactive gas near the location of
reaction.
[0010] According to this aspect, the invention is characterized in
that a volume of a coherent gas space extending from the outlet end
of the hollow needle to the valve body in the tube is particularly
small when the valve body is in its gas flow blocking position. In
this case, this volume especially fulfills the relation V<c*A*l,
wherein A is the area of the inner cross-section of the hollow
needle at the outlet end thereof, l is a distance between the
outlet end of the hollow needle and the valve body in its gas flow
blocking position and c is a constant which is preferably smaller
than 5.
[0011] To select the volume in such a way is based on the following
consideration: When a reaction of the reactive gas with the work
piece has taken place to a desired degree, the valve is closed to
prevent further reactive gas from being supplied to the location of
reaction. However, there is still residual reactive gas present in
the volume of the tube and hollow needle between the valve body, in
its closed position, and the outlet end of the hollow needle. Such
residual gas continues to emerge from the outlet end of the hollow
needle for some time. This may cause further, then undesired,
depositions of the reactive gases and further reactions of the same
with the work piece.
[0012] It has already been proposed to dispose the valve
particularly close to the work piece to minimize this volume of the
gas space between the valve body and the outlet end. In this case,
however, space must also be provided near the location of reaction
for accommodating the valve. This results into an increased
distance between the work piece surface and an optical system for
directing the energy beam to the work piece. In some applications,
however, it is essential to reduce such distance to achieve a
finely focused energy beam.
[0013] The inventors have found that such a small distance between
the optical system and the work piece can be realized if the gas is
delivered through a relatively thin hollow needle to the proximity
of the location of reaction. However, a valve having a movable
valve body cannot be disposed in such a thin hollow needle.
Therefore, the hollow needle is coupled to the tube with the
movable valve body disposed therein. The tube which has a
considerably larger cross-section than the hollow needle can then
be disposed remote from the location of reaction. In this remote
position, the necessary space for the, compared to the hollow
needle, large valve body is then also available.
[0014] In light of this consideration, a gas volume between the
outlet end of the hollow needle and the valve body therefore cannot
be completely avoided. However, according to the invention, this
volume is minimized. This is possible if the above-mentioned
relation is complied with.
[0015] Preferably, this volume is selected even smaller. In this
case, especially c<3, preferably c<1.5, further preferred
c<1.2 and even more preferred c<-1.1. It is then in
particular possible to place a plurality of different gas supplies
around the location of reaction and to realize a relatively quick
and, in terms of time, precise gas flow control for each gas supply
by actuation of the respective valve bodies.
[0016] According to a particularly preferred embodiment of the
invention, the value of constant c is substantially equal to 1.0.
This is achievable, for example, if in order to block the gas flow,
the valve body is directly urged against an end face of the hollow
needle opposite to the outlet end of the hollow needle.
[0017] Preferably, the hollow needle has an inner diameter of from
0.3 mm to 2.0 mm, further preferred of from 0.5 mm to 1.7 mm, and
particularly preferred of from 0.7 mm to 1.5 mm.
[0018] Accordingly, the hollow needle has an outer diameter
preferably of from 0.6 mm to 2.5 mm, further preferred of from 0.8
mm to 2.0 mm and particularly preferred of from 1.0 mm to 1.8 mm. A
preferred length of the hollow needle ranges between 30 mm and 70
mm and particularly preferred between 40 and 60 mm.
[0019] Furthermore, the hollow needle can preferably be configured
such that an inner cross-section corresponds over a total length of
the hollow needle substantially to the inner cross-section of the
outlet opening of the hollow needle, i.e., the hollow needle is of
substantial tubular configuration. In a further preferred
embodiment, the hollow needle is tapered in the portion of the
outlet opening, i.e., the inner cross-section in the portion of the
outlet opening is smaller than an inner cross-section of a portion
between the tapered portion of the outlet opening and the inlet
end, the degree of taper being selected such that the
above-indicated conditions as regards the volume and the constant
c, respectively, are fulfilled. In order to prevent an undesired
further flow of reactive gas, it is advantageous to use only a
slightly tapered or untapered hollow needle which prevents a back
pressure of gas due to an inner cross-section of the outlet opening
which is smaller than that of the hollow needle as a whole.
[0020] According to a second aspect, the invention proceeds from a
gas supply arrangement comprising at least one gas supply which
includes a valve body which is displaceable in a tube and is
movable between a first position in which it releases a gas flow
out of the tube and a second position in which it substantially
blocks a gas flow out of the tube. In a preferred embodiment, the
valve body is of square cross-section with rounded corners.
Accordingly, the valve body with its rounded corners is guided on
an inner surface of the tube, whereas between each pair of rounded
corners a portion of the valve body has a larger distance from the
inner enclosure of the tube to provide four cross-sections for the
reactive gas to flow around the valve body in the interior of the
tube and to then enter the hollow needle when the valve body is
disposed at a distance from the sealing ring. Moreover, a reservoir
accommodating a solid or/and liquid starting material for
generating the reactive gas is provided. The reactive gas is
generated by evaporation, volatilization or sublimation of the
liquid or/and solid starting material.
[0021] According to this aspect, the invention is characterized in
that a temperature-adjusting apparatus is provided for adjusting a
temperature of the starting material.
[0022] This configuration of the reservoir is advantageous in
particular in combination with an on-off valve which, in contrast
to a dosing valve, merely assumes a substantially completely closed
position and a substantially completely opened position.
Accordingly, the reactive gas flow towards the location of reaction
can be adjusted by adjusting the temperature of the starting
material because the vapor pressure of the starting material is
temperature-dependent.
[0023] Starting materials are preferably used which have, at a
temperature below room, a vapor pressure which is sufficient a
vapor pressure to generate a gas flow from the reservoir through
the valve to the location of the specimen. The
temperature-adjusting apparatus then preferably comprises a cooling
device to set the temperature of the starting material below room
temperature, at which temperature the vapor pressure of the
starting material has a desired value. Examples for such starting
materials are: pentabutyl silane or tetrabutyl silane and hydrogen
peroxide which can be used in combination to deposit silicon
dioxide on the work piece, as well as cyclopentadienyl trimethyl
platinum with which a platinum/carbon composite can be deposited on
the work piece.
[0024] By maintaining the reservoir with the starting material at a
temperature which is below the temperature of the other components
of the gas supply arrangement, it is largely ensured that reactive
gas emerging from the reservoir does not deposit on walls of the
other components of the gas supply arrangement.
[0025] As an alternative or in addition to a cooling of the
starting material, it is preferably also contemplated to heat other
components of the gas supply arrangement, such as the hollow needle
or the valve body or the tube in which the valve body is movably
supported.
[0026] In order to adjust the vapor pressure of the starting
material in the reservoir to a desired value with increased
accuracy, there is preferably provided a pressure sensor for
measuring this gas pressure and a controller which, in dependence
of a measured pressure signal supplied by the pressure sensor,
controls the temperature-adjusting apparatus to change the
temperature of the starting material in the reservoir. Preferably,
the pressure sensor is coupled to a gas space which comprises the
reservoir, the tube in which the valve body is movable and
connecting lines therebetween.
[0027] According to a further aspect of the invention, there is
provided a gas supply arrangement which comprises at least two gas
supplies for supplying two different reactive gases to the location
of reaction. Accordingly, different starting materials are
contained in the respective reservoirs of the at least two gas
supplies, which starting materials have specific gas pressures at
their operating temperatures.
[0028] According to this aspect of the invention, a gas conductance
of the hollow needle of each gas supply is adapted to the
respective starting material in order to adjust, at a respective
prevailing gas pressure, the gas flow through the hollow needle
such that a desired amount of gas emerges from the outlet end
thereof. In this case, in particular different gas supplies may
have different gas conductances of the hollow needles thereof. In
particular, the hollow needles of different gas supplies may have
different inner cross-sections or/and different lengths.
[0029] In particular, it is provided for that for two starting
materials of which a first starting material has a higher vapor
pressure at a specific temperature, such as room temperature, than
a second one of the two starting materials the gas conductance of
the hollow needle for delivering the first starting material is
lower than the respective gas conductance of the hollow needle for
delivering the second starting material.
[0030] In particular, in combination with the embodiment in which a
temperature-adjusting apparatus is provided for adjusting the
temperature of the starting material this allows to realize a
coarse adjustment of the gas flow by appropriately adjusting the
gas conductance of the hollow needle and to realize a fine
adjustment of the gas flow by adjusting the temperature of the
starting material.
[0031] According to a further aspect, the invention proceeds from a
material processing system comprising a processing chamber, a work
piece holder for holding a work piece to be processed in the
processing chamber, a gas supply arrangement for supplying at least
one reactive gas to a portion of the work piece to be processed,
and an apparatus for directing an energy beam to the work piece
portion to be processed to induce the reactive gas to react with
the work piece at this location.
[0032] According to this aspect of the invention, an electron beam
is used as energy beam which is generated by an electron
microscope. The electron microscope also allows to take
electron-microscopic images of the work piece. This is primarily
done in an operating mode in which the reactive gas is not
supplied.
[0033] Accordingly, the electron microscope is used to obtain
electron-microscopic images of the work piece to be processed, on
the one hand, and to induce a controlled reaction in such portions
of the work piece between the reactive gas supplied and the work
piece. Accordingly, the electron microscope is used to perform two
tasks. For both tasks the high focusing capacity of the electron
beam enabled by the electron beam is utilized. As a result, a high
resolution imaging as well as a high resolution processing of the
work piece is achieved.
[0034] Moreover, while the reactive gas is supplied, it is also
possible to utilize a signal of the secondary electron detector of
the electron microscope to monitor the material processing, since
an intensity of the secondary electrons may change while the
reaction takes place and with increasing material deposition on or
increasing material removal from the work piece.
[0035] In particular, it is then possible to first carry out
processing steps on the work piece by supplying gas and directing
the electron beam to selected locations of the work piece and then
to take an electron-microscopic image of the work piece while the
gas supply is switched off and to compare this image with a
reference image of the work piece. Those locations of the work
piece where the image of the work piece differs from the reference
image can then be identified to perform further processing at these
locations in a further step by supplying reactive gas.
[0036] The use of the electron microscope for imaging and for the
activation of the gas reaction is particularly advantageous if the
work piece to be processed is a mask for use in a lithographic
process, because in such a process particularly high resolution
material processing manipulations have to be performed on the mask.
This combination is of particular advantage if the mask is a phase
shifting mask (phase mask, PSM). In contrast to the ion beam which
is conventionally used to initiate the gas reaction and which also
causes ions to be implanted in the mask, the electron beam does not
result into implantations or similar changes of the mask material.
Such implantations should be avoided in phase shifting masks,
because the implanted materials themselves have a phase shifting
effect on the radiation used in the subsequent lithographic process
for illuminating the mask.
[0037] According to a further aspect, the invention proceeds from a
material processing system comprising a processing chamber, a work
piece holder for holding a work piece to be processed, an electron
microscope and a gas supply arrangement for supplying at least one
reactive gas. In this embodiment, the electron microscope comprises
an electron source for generating an electron beam, at least one
focusing lens for focusing the electron beam on an object plane of
the electron optics and at least one electron detector for
detecting secondary electrons which are generated in a portion
around the object plane.
[0038] According to this aspect, the work piece holder is
configured such that the work piece can be positioned relative to
the electron microscope such that a surface of the work piece may
be disposed substantially in the object plane of the electron
microscope. Furthermore, the gas supply arrangement is disposed
relative to the work piece holder such that the reactive gases
supplied from the gas supply arrangement emerge near the object
plane in a region around the electron beam.
[0039] According to this aspect of the invention, the electron
microscope comprises at least two pressure diaphragms, each having
an aperture for the electron beam to pass therethrough, wherein the
pressure diaphragms partially separate three vacuum sections from
each other. This is, for one, the vacuum section of the processing
chamber in which the work piece is disposed and, for the other, a
vacuum section in the interior of the electron microscope in which,
inter alia, the electron source is disposed.
[0040] Furthermore, this is an intermediate vacuum section disposed
between the vacuum section comprising the electron source and the
vacuum section of the processing chamber. As a result, it is
possible to maintain a higher gas pressure in the vacuum section of
the processing chamber than in the vacuum section comprising the
electron source. The electron source requires a particularly high
vacuum for its operation while reactive gases are supplied to the
processing chamber which causes a higher gas pressure in the
latter. It is likewise possible to provide in the vacuum section
comprising the electron source still further vacuum sections
separated by pressure diaphragms in order to provide an improved
vacuum for the electron source itself.
[0041] Preferably, according to this aspect, the electron detector
for taking the electron-microscopic images is disposed in the
vacuum section. This prevents the detector from being damaged by
the in most cases aggressive reactive gases which are supplied to
the processing chamber.
[0042] Furthermore, a focusing lens of the electron microscope
which is disposed next to the object plane is preferably disposed
between the detector and the object plane. This enables a
particularly small distance to be realized between the focusing
lens next to the object plane and the object plane, because the
electron detector need not be positioned in a space between the
focusing lens next to the object plane and the object plane. Such
small working distance allows a particularly fine focusing of the
electron beam in the object plane.
[0043] Preferably, a separate vacuum pump is provided to evacuate
the intermediate vacuum section in a region near the pressure
diaphragm. This separate vacuum pump is preferably a turbo
molecular pump.
[0044] It may be advantageous to separate a limited subsection
between the work piece and the electron microscope from the
possible vacuum section of the processing chamber. In this case,
the at least one reactive gas is then directly supplied to the thus
formed subsection. In this subsection, the supplied reactive gas is
thus maintained under an increased pressure as compared to the
remaining section of the processing chamber and does not flow
unhindered into the entire volume of the processing chamber. This
allows an economical use of the reactive gas and furthermore a
quick adjustment of the desired partial pressure of the reactive
gas in the subsection.
[0045] In order to form such a subsection, a component of the
electron microscope disposed next to the object plane is preferably
provided such that it comprises a substantially planar end face
which annularly encloses the electron beam and is oriented towards
the object plane.
[0046] Preferably, this end face is spaced apart from the object
plane by a distance of less than 100 .mu.m, preferably less than 50
.mu.m. This allows to separate the subsection sufficiently from the
rest of the processing chamber without contact being established
between the end face and the work piece to be processed. As a
result, increased pressures of the at least one reactive gas can be
generated within the subsection.
[0047] As an alternative thereto, the component of the electron
microscope disposed next to the object plane can also be provided
as sealing to abut against the work piece.
[0048] According to a preferred embodiment of the invention, the
pressure diaphragm itself is positioned between the focusing lens
of the electron microscope disposed next to the object plane and
the object plane. In this embodiment, the secondary electrons
emanating from the object plane travel a comparatively short
distance under the bad vacuum conditions prevailing in the
subsection before they enter the intermediate vacuum section with a
considerably higher vacuum and then the vacuum section including
the electron source and are recorded there by the detector.
[0049] In addition, a second electron detector can be provided in
the processing chamber. The detection signals of the second
electron detector are detected especially if the vacuum conditions
in the processing chamber are so bad that the first electron
detector disposed in the intermediate vacuum section delivers no
satisfactory signals.
[0050] Preferably, the material processing system comprises a
controller for the system to be switched from a first operating
mode to a second operating mode. In the first operating mode, the
gas pressure in the processing chamber is much lower than in the
second operating mode. In the first operation mode, preferably no
reactive gas is supplied and, in this operating mode, preferably
the electron-microscopic images of the work piece to be processed
are generated. In the second operating mode, preferably reactive
gas is supplied to the work piece for a material processing to be
performed thereon.
[0051] The processing space is preferably evacuated by a separate
vacuum pump, especially a turbo molecular pump, the pump being
preferably inoperative in the second operating mode.
BRIEF DESCRIPTION OF THE DRAWINGS
[0052] The forgoing as well as other advantageous features of the
invention will be more apparent from the following detailed
description of exemplary embodiments of the invention with
reference to the accompanying drawings, wherein:
[0053] FIG. 1 is a schematic representation of an embodiment of a
material processing system having a gas supply arrangement,
[0054] FIG. 2 is a detailed representation of the gas supply
arrangement of FIG. 1,
[0055] FIG. 3 is a detailed view of FIG. 2,
[0056] FIG. 4 shows a cross-section along a line IV-IV of FIG.
3,
[0057] FIG. 5 shows a variant of the material processing system
shown in FIG. 1,
[0058] FIG. 6 is a detailed view of FIG. 5,
[0059] FIG. 7 shows a variant of FIG. 6, and
[0060] FIG. 8 shows a variant of the portion of the gas supply
arrangement shown in FIG. 3,
[0061] FIG. 9 shows a variant of the gas supply arrangement shown
in FIG. 2.
DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS
[0062] In the exemplary embodiments described below, components
that are alike in function and structure are designated as far as
possible by alike reference numerals. Therefore, to understand the
features of the individual components of a specific embodiment, the
descriptions of other embodiments and of the summary of the
invention should be referred to.
[0063] FIG. 1 schematically illustrates an embodiment of a material
processing system 1 according to the invention. This system is used
to process a work piece 3, namely a phase mask. This photo mask
serves for use in a photolithographic process and carries
structures which are photographically transferred to a
radiation-sensitive layer (resist) with which a semiconductor
substrate (wafer) is coated. In relation to the wavelength of the
light used to transfer the structures from the mask to the
semiconductor substrate, the critical dimensions of the structures
are relatively small. Therefore, the structures on the mask are not
merely embodied as alternately transparent and absorbent
structures, but shall also provide a defined phase shifting effect
for the light used for the imaging process. Accordingly, the
structures of the mask 3 must relatively precisely comply with
predetermined limits for location-dependent material densities.
[0064] The material processing system 1 allows to produce such
structures by material deposition at selected locations or also by
material removal from selected locations.
[0065] The material deposition is effected herein by supplying a
reactive gas (precursor) to the proximity of the location selected
for processing. At the same time, an electron beam of primary
electrons is directed to the selected location. Primary electrons,
or backscattering or secondary electrons released from the work
piece by the primary electrons, activate the reactive gas so that
components of the reactive gas are deposited at the selected
location or in close proximity thereto. As a result, the desired
material deposition is effected in the area of the selected
location.
[0066] The material removal is effected in similar way. However, a
different reactive gas is supplied which is activated by the
primary electrons or backscattering or secondary electrons
generated by the primary electrons such that the reactive gas
reacts with the material of the work piece at the selected location
or in close proximity thereto and converts components of the
material to a gaseous or vapor compound which escapes from the work
piece. Thus, the desired material removal is achieved in the area
of the selected location.
[0067] To this end, the work piece 3 is fixed to a work piece
holder 5. The work piece holder 5 and the work piece 3 are disposed
in a processing chamber 7 which may be evacuated by means of a
turbo molecular pump 9 and a further pre-vacuum pump not shown in
FIG. 1.
[0068] A spatial position of the work piece holder 5 relative to
the processing chamber can be changed in the three spatial
directions x, y, z by means of actuators not shown in FIG. 1.
Plural laser interferometers 11 are provided to detect the position
of the work piece holder 5 relative to the processing chamber
7.
[0069] An electron microscope 15 is mounted in a vacuum enclosure
13 of the processing chamber 7 such that the optical axis 17 of the
electron microscope 15 extends in z direction and an object plane
19 of the electron microscope 15 is within the processing chamber
7. The work piece holder 5 is positioned within the processing
chamber 7 such that a surface 21 of the work piece 3 is disposed
substantially in the object plane 19 of the electron microscope
15.
[0070] The electron microscope 15 comprises an electron-emitting
electron source 23 and a magnetic coil 25 acting as a condenser to
form an electron beam from the emitted electrons. The electron beam
is directed downwardly along the axis 17. An objective lens 27 of
the electron microscope 15 comprises an upper pole piece 29 and a
lower pole piece 31, a coil 32 being provided therebetween. The
pole pieces define a pole piece gap towards the axis 17. The
objective lens 27 focuses the electron beam in the object plane
19.
[0071] Furthermore, deflection coils 35 are provided to deflect the
electron beam from the optical axis 17 of the electron microscope
15 into x and y directions. A controller 37 controls a current
passing through the deflection coils 35 and thus the deflection of
the electron beam in x and y direction.
[0072] A secondary electron detector 39 is disposed in the
processing chamber 7 between the objective lens 27 and object plane
19. The detection signal of the secondary electron detector 39 is
read out by the controller 37. To take an electron-microscopic
image of the work piece 3 in a portion disposed in the object plane
19 around the axis 17, the controller 37 controls the deflection
coils 35 such that the electron beam systematically scans the
portion. The intensities recorded by the detector 39 in dependence
of the deflections are stored by the controller 37 for further
processing, or displayed on a display.
[0073] A further secondary electron detector 41 which is likewise
read out by the controller 37 is disposed within the electron
microscope 15 concentrically around the axis 17 thereof. This
detector is disposed within a beam tube 43. The beam tube is
symmetrically disposed about the axis 17 and is conically tapered
downwardly. The beam tube 43 terminates in a collar 45 in the
direction of the object plane 19 at the height of the end of the
lower pole piece 31. The collar 45 extends radially away from the
axis. An apertured electrode 47 is provided between the collar 45
and the object plane 19. The aperture of the apertured electrode
has a diameter of 5 mm. Voltage sources, not shown in FIG. 1, which
are controllable by the controller 37 are provided to apply
adjustable electric potentials to the beam tube 43 and the
apertured electrode 47. In one operating mode of the system 1 in
which relatively good vacuum conditions with a gas pressure of less
than 10.sup.-3 mbar prevail in the processing chamber 7, the
potential of the beam tube 43 is 8 kV and the apertured electrode
47 is at ground potential. Accordingly, an electric field is
generated between the collar 45 and the apertured electrode 47.
This electric field, on the one hand, decelerates and focuses the
primary electrons of the electron beam and, on the other hand,
accelerates secondary electrons which emanate from the work piece 3
and travel in a solid angle area surrounding the axis 17 such that
the secondary electrons move upwardly along the axis 17 with
increased kinetic energy and impinge on the secondary electron
detector 41 which records the secondary electrons.
[0074] In this operating mode, it is advantageous for the detector
41 to be used for taking the electron-microscopic images of the
work piece 3 and to set the other secondary electron detector 39
out of operation. This is because an electrostatic acceleration
field which is necessary for the operation of the detector 39 does
then not impede the focusing of the primary electrons onto the work
piece 3.
[0075] Moreover, it is possible to dispose the secondary electron
detector in the processing chamber 39 at a position which, although
not being optimal for the operation of the detector, allows to
provide a relatively small distance between the apertured electrode
47 and the object plane 19. This, in turn, enables the electron
beam to be particularly finely focused in the object plane 19 and
thus a particularly high position resolution of the electron
microscope 15.
[0076] In addition to the electron detectors 39 and 41, an
energy-resolving photon detector 51 is disposed in the processing
chamber. The energy-resolving photon detector 51 records
X-radiation emanating from the work piece 3 in the region of the
axis 17 in energy-resolved manner. By evaluation of the energy
spectra of the X-radiation induced in the work piece 3 by the
primary electrons, it is possible to obtain information on the
material composition of the work piece 3 at the location onto which
the electron beam is currently focused.
[0077] In addition to the electron microscope 15, a gas supply
arrangement 53 is flanged to the vacuum enclosure 13 of the
processing chamber 7. This gas supply arrangement 53 comprises
plural gas supplies 55, each including a hollow needle 57 for
supplying a reactive gas into the processing chamber to the work
piece 3. For this purpose, outlet ends 59 of the hollow needles 57
are disposed about 0.5 mm above the object plane 19 and 1 to 2 mm
apart from the axis 17.
[0078] The gas supply arrangement 53 is shown in detail in FIGS. 2
to 4 and comprises four gas supplies 55 symmetrically arranged
about an axis 58. Two of the gas supplies 55 are shown in FIG.
2.
[0079] The hollow needles 57 have an inner diameter of 0.7 mm to
1.5 mm and a corresponding outer diameter of 1.0 mm to 1.8 mm. The
hollow needle 57 comprises an inlet end 61 which is disposed
opposite to the outlet end 59 in the vicinity of the axis 17 of the
electron microscope 15 and accommodated in an end wall 63 of a
round tube 65. The tube 65 has an inner diameter of 4 mm. An
annular sealing ring 71 is provided in the interior of the tube 65.
The annular sealing ring 71 abuts both against an inner wall 69 of
the tube 65 and against an inner surface 73 of the end wall 63 of
the tube.
[0080] The sealing ring 71 forms part of a valve 72 which
selectively blocks and releases a gas flow from the interior of the
tube 65 into the hollow needle 57. In a gas blocking position of
the valve 72, a valve body 75 is urged with its end face against
the sealing ring 71. A contact surface between the sealing ring 71
and the end face of the valve body 75 is intimated in dashed line
75 in FIG. 4.
[0081] In the gas flow releasing position of the valve 72, the
valve body 75 is disposed spaced apart from the sealing ring 71, as
it is shown in dashed line in FIG. 3.
[0082] From FIG. 4 it is evident that the valve body 75 has a
square cross-section with rounded corners so that the valve body is
guided with its rounded corners at the inner surface 69 of the tube
65. However, between each pair of rounded corners a portion of the
valve body 75 is spaced further apart from the inner surface 69 of
the tube 65. As a result, four passage cross-sections 79 are formed
through which the reactive gas may flow around the valve body 75 in
the interior of the tube 65 and then pass into the hollow needle 57
when the valve body 75 assumes its position remote from the sealing
ring 71.
[0083] The valve 72 is actuated by a rod 81 which extends coaxially
to the tube 65. The valve body 75 is fixed to one end of the rod
81. To the other end of the rod a piston 83 is fixed which is
movably supported within a pneumatic cylinder 85.
[0084] The pneumatic cylinder 85 comprises two compressed-air
connections 87. Compressed air can be selectively supplied to the
compressed-air connections 87 to urge the valve body 75 either
against the sealing 71 for the gas flow into the hollow needle to
be blocked or to remove the valve body 75 from the sealing 71 for
the gas flow into the hollow needle to be released. The reactive
gas is supplied to the interior of the tube 65 via a connection 89
which is inserted into the tube 65 via a T-piece.
[0085] A flange 91 for connecting to the vacuum enclosure 13 of the
processing chamber 7 encloses the tubes 65 of the four gas supplies
55. One end of a bellow 93 is connected in vacuum-tight manner to
the flange 91. The other end of the bellow is connected in
vacuum-tight manner to a flange 95 through which the tubes 65
extend separately in vacuum-tight manner. The tubes 65 are also
mechanically fixedly connected to the flange 95. Plural threaded
rods 97 extend in parallel to the bellow 93 between the flanges 91
and 95. The flanges 91 and 95 are connected to the threaded rods 97
by means of nuts 99. By turning the nuts 99, it is possible to
change the distances between the flanges 91 and 95 and thus to
adjust the positions of the outlet ends 95 of the hollow needles 57
relative to the object plane 19 and the axis 17 of the electron
microscope 15 when the gas supply arrangement 53 is fixed to the
vacuum enclosure 13 of the processing chamber 7.
[0086] The threaded rods 97 further support a plate 101 to which
the compressed-air cylinders 85 for actuating the valves 72 are
fixed in position. At their ends disposed away from the hollow
needle 57, each tube 65 goes over into a bellow 103 which is closed
in vacuum-tight manner by a plate 105. The rod 81 for shifting the
valve body 75 is fixed to the plate 105. The plate 105, in turn, is
coupled to the piston 83 in the compressed-air cylinder 85 via a
rod 106. Accordingly, by actuating the compressed-air cylinder 85,
the bellow is expanded or compressed which, in turn, causes the
valve body 75 to be shifted in the tube 65 and thus the valve 72 to
be actuated.
[0087] When the valve 72 is switched at a specific point in time
from its opened state into the state in which it blocks the gas
flow, it is desirable that, as of this point in time, substantially
no reactive gas emerges anymore from the outlet end 59 of the
hollow needle 57. However, at the time when the valve is completely
closed there is still residual reactive gas present in the space
between the valve body 75 and the outlet end 59 of the hollow
needle 57. This residual reactive gas will then still emerge from
the outlet end 59 of the hollow needle 57 and may thus cause a
further reaction with the work piece 3.
[0088] However, it is ensured that the volume of the gas space
formed between the valve body 75 and the outlet end 59 is
relatively small. It should be noted that this space cannot be
avoided to have a certain volume, since the reactive gas is
supplied to the location of reaction near the work piece 3 by means
of the hollow needle 57. The hollow needle 57 must have a specific
gas conductance and thus a specific minimum cross-section to allow
a desired gas flow towards the work piece 3. However, it is
possible for the cross-section of the hollow needle 57 to be
smaller than a minimum cross-section of the valve 72. This involves
the advantage that no large-volume components, such as the valve
body 75, must be disposed in the proximity of the location of
reaction.
[0089] The valve 72 and its transition to the hollow needle 57 are
designed such that, in closed position of the valve 72, the gas
space between the valve body 75 and the outlet end 59 of the hollow
needle 57 is not considerably larger than the volume of the hollow
needle 57 itself. As shown in FIG. 3, the volume of this gas space
is comprised of the volume of the hollow needle 57 and a volume
which is axially delimited by the inner surface 73 of the end wall
63 of the tube 65, on the one hand, and by the end face of the
valve body 75 disposed towards the hollow needle, on the other
hand. In radial direction, the gas space is delimited by the
sealing ring 71. The small radius of the sealing ring 71 is about
0.5 mm. The inner radius of the sealing ring 71 is about 1.0 mm.
Accordingly, the volume between the valve body 75 and the end wall
73 has a value of about 1.5 mm.sup.3.
[0090] With an inner diameter of 1.0 mm and a length of 50 mm, the
hollow needle has a volume of about 40 mm.sup.3. In total, the
volume between the outlet end of the hollow needle 59 and the end
face of the valve body 75 in the closed position of the valve 72 is
thus 41.5 mm.sup.3. The length l indicated in FIG. 3 is the sum of
the length of the hollow needle and the small diameter of the
sealing ring 71 and is thus about 51 mm.
[0091] A value c of a ratio of the volume of the gas space divided
by the cross-section of the hollow needle 57 at its outlet end 59
times the length l 1 ( c = V A l )
[0092] thus has a value of about 1.05. This means that, in the
embodiment of the valve 72 shown in FIG. 3 and its transition into
the hollow needle 57, the volume of the gas space between the
outlet end of the hollow needle 59 and the valve body 75 in its gas
flow blocking position is merely 1.05 times larger than the volume
predetermined by the hollow needle 57 itself. Therefore, a period
of time during which reactive gas still flows out of the outlet end
59 from the hollow needle in an appreciable amount after the valve
has been closed is decreased to a minimum.
[0093] The generation of reactive gas will now be described in
further detail with reference to FIG. 2.
[0094] The connecting piece 89 communicating with the interior of
the tube 65 is connected via a hose 110 to a reservoir 111 in which
a starting material 113 of the reactive gas is accommodated. A
separate reservoir 111 is associated to each gas supply 55. A
respective starting material 113 is accommodated in the reservoir
111. The starting material 113 is present in the reservoir 111 in
solid or liquid form. The reactive gas is generated by evaporation,
volatilization or sublimation of the starting material. When the
valve 72 is closed, a partial pressure of the reactive gas is
generated in the coherent gas space extending from the reservoir
111 to the valve 72. This partial pressure is substantially equal
to the vapor pressure of the starting material 113. When the valve
72 is now opened, the reactive gas starts to flow so that it
emerges at the outlet end 59 from the hollow needle 57. This gas
flow is substantially limited by the gas conductance of the hollow
needle 57, because the cross-section of the hollow needle 57 is
substantially smaller than cross-sections of the other components
of the gas supply arrangement, such as the cross-section of the
tube 65, the cross-section of the connecting piece 89 or of the
hose 110.
[0095] Under the desired operating conditions, the gas conductance
L [l/sec] of a tube having a diameter d [cm] and a length l [cm]
can be estimated to be 2 L = 12 d 3 l .
[0096] Accordingly, the gas conductance of the hollow needle is
about 2.multidot.10.sup.-2 l/sec. If a value of 0.1 mbar is assumed
for the gas pressure of the starting material 113, a value of
10.sup.-3 mbar l/sec results for the gas flow Q through the hollow
needle into the processing chamber 7. If a value of 100 l/sec is
assumed for the effective suction capacity S.sub.eff of the turbo
molecular pump 9 evacuating the processing chamber 7, a final
vacuum in the processing chamber 7 or a partial pressure of the
reactive gas will be 3 p end = Q S eff = 10 - 5 mbar .
[0097] In the direct environment of the outlet end 59 of the hollow
needle 57, the density of the reactive gas will, however, be
significantly higher than in other portions of the processing
chamber which are remote from the outlet end. Therefore, the outlet
end 59 is disposed merely a small distance apart from the location
of the work piece 3 to be processed. The electron beam directed to
the work piece 3 can then induce the reactive gas to effectively
react with the work piece.
[0098] In order to be able to control this reaction as precisely as
possible, it is thus necessary to also adjust the amount of
reactive gas emerging from the hollow needle 57 as precisely as
possible.
[0099] It has been found that conventional solutions which use
dosing valves, such as needle valves, for adjusting the gas flow
fail to work satisfactorily, because a dosing behavior of the
needle valve changes over time. As a result, the reproducibility of
the material processing to be performed on the work piece is
unsatisfactory. Therefore, the embodiment shown here does not
comprise a dosing valve as valve 72 but an on-off valve which can
be switched from a position in which it substantially blocks the
gas flow to a position in which it releases the gas flow
substantially completely. Although, in so doing, the valve passes
for a short time through intermediate positions which more or less
release the gas flow, the valve is not designed to finely dose a
gas flow.
[0100] In the completely opened position of the valve 72, the gas
flow through the hollow needle 57 is thus substantially determined
by the gas conductance of the hollow needle and the vapor pressure
of the starting material 113. At a given geometry of the hollow
needle 57, the gas conductance thereof is also predetermined.
Therefore, the gas pressure of the starting material 113 must be
changed to change the gas flow through the hollow needle 57. To
this end, a temperature-adjusting apparatus 115 is provided at the
reservoir 111. For this purpose, plural coils 117 of a liquid
circuit are provided at the reservoir 111. The liquid circuit is
driven by a heating/cooling device 119. The heating/cooling device
119 adjusts the temperature of the liquid passing through the
liquid circuit to a value which is predetermined by a controller
121. The controller 121 further reads a signal supplied by a
pressure sensor 123 which measures the gas pressure within the
reservoir 111. As this gas pressure is substantially determined by
the vapor pressure of the starting material 113, the controller 121
will set the heating/cooling device 119 to a higher temperature
than a current temperature to increase the temperature of the
starting material 113 when the pressure measured by the sensor 123
is lower than a desired vapor pressure of the starting material
113. Vice versa, the controller 121 will set the heating/cooling
device 119 to a lower temperature if the pressure measured by the
sensor is higher than a desired vapor pressure.
[0101] The gas conductance of the hollow needle 57 is adapted to
the starting material 113 to be used such that, in order to adjust
the desired vapor pressure, the temperature of the starting
material 113 is to be set to a lower value than the operating
temperature of the apparatus or room temperature. It is also
possible for the heating/cooling device 119 to set the temperature
of the starting material 113 higher than the operating or room
temperature. However, in this case, the reactive gas evaporating or
sublimating from the surface of the starting material 113 in the
heated reservoir 111 might then deposit on the, compared thereto,
colder walls of the gas supply 55. Especially in the interior of
the hollow needle 57 which shall provide a defined gas conductance
such a deposition of reactive gas results into a reduction of the
gas conductance and thus to a deteriorated reproducibility of the
results. If, however, as described above, the temperature of the
starting material 113 in the reservoir 111 is lower than the
temperature of the other walls of the gas supply 55, such a
deposition of the reactive gas on the walls of the gas supply 55 is
substantially avoided.
[0102] The gas supply arrangement 53 shown in FIG. 2 is configured
for the ejection of two reactive gases. These gases are induced by
the electron beam to react with each other such that a
platinum/carbon composite is deposited on the work piece 3 in the
portion to which the electron beam is directed. To this end, the
reservoir 111 shown on the left in FIG. 2 contains hydrogen
peroxide as solid at a temperature of minus 40.degree. C. At this
temperature, the vapor pressure of hydrogen peroxide is 0.05 mbar.
The hydrogen peroxide is ejected to the location of processing
through the upper hollow needle 57 shown in FIG. 2. This hollow
needle 57 has an inner diameter of 0.8 mm and a length of 50 mm.
The gas conductance of this hollow needle is thus
1.6.multidot.10.sup.-3 l/sec. Accordingly, when the valve 72 is
open, hydrogen peroxide emerges from the outlet end 59 in such an
amount that about 52 monolayers of hydrogen peroxide per second can
be deposited on the work piece.
[0103] The reservoir shown on the right of FIG. 2 contains
cyclopentadienyl trimethyl platinum at a temperature of 20.degree.
C. at which the vapor pressure is 0.05 mbar. The lower hollow
needle 57 shown in FIG. 2 through which this gas flows to the
location of reaction has an inner diameter of 1.4 mm and likewise a
length of 50 mm. Its conductance is thus 1.6.multidot.10.sup.-3
l/sec. Under these conditions, the gas cyclopentadienyl trimethyl
platinum flows out of the hollow needle in such an amount that a
deposition of about 276 mono layers per second would result.
[0104] When reactive gases flow out of the gas supply arrangement
53, a vapor pressure which is too high to operate an electron
source 23 is generated within the processing chamber. Therefore, a
pressure diaphragm 121 is provided inside of the steel tube 43,
(see FIG. 1). This pressure diaphragm has an inner diameter of 1 mm
for the electron beam to pass therethrough. The pressure diaphragm
121 separates the vacuum section of the material processing system
1 into a vacuum section disposed below the pressure diaphragm 121
and comprising the processing chamber 7 and an intermediate vacuum
section disposed above the pressure diaphragm 121. The vacuum
section disposed above the pressure diaphragm 121 is further
separated into vacuum subsections 125 and 127 which are separately
evacuated. The intermediate vacuum section 123 is evacuated by a
separate turbo molecular pump 129 and delimited at the bottom by
the pressure diaphragm 121 and at the top by a pressure diaphragm
131 having an inner diameter of 500 .mu.m.
[0105] The vacuum section 125 is evacuated by an ion getter pump
133 and is delimited at the bottom by the pressure diaphragm 131
and at the top by a further pressure diaphragm 135 having an inner
diameter of 80 .mu.m. The vacuum section 127 disposed above the
pressure diaphragm 135 is evacuated by a further ion getter pump
137 and includes the electron source 23.
[0106] A closure 139 actuated by an actuator 141 is provided to
completely close the pressure diaphragm 131. The actuator 141 is
controlled by the controller 37 such that the closure 139 is opened
only if a pressure sensor 143, read out by the controller 37,
records a pressure in the subsection 123 which is less than
10.sup.-3 mbar.
[0107] Sealings 145 are provided to seal the pole pieces 29 and 31
against the steel tube 43 so that the coil 32 need not be disposed
in a vacuum in respect of the objective lens 27.
[0108] By separating the vacuum section of the processing chamber 7
from the vacuum section including the electron source 23 which is
again separated into subsections 123, 125, 127, it is possible to
operate the electron microscope also when reactive gas is supplied
into the processing chamber 7. Accordingly, it is possible for the
electron microscope 15 to provide an electron beam which is finely
focused to the work piece 3 in order to induce the reactive gas to
react with the work piece 3 at selected locations.
[0109] Moreover, it is possible to take electron-microscopic images
of the work piece 3 by means of the electron microscope 15 and to
thus monitor the progress of the processing of the work piece. The
electron-microscopic images can be taken when reactive gas is
currently not supplied to the vicinity of the processing location.
In this case, particularly good vacuum conditions prevail in the
processing chamber 7. However, it is also possible to take
electron-microscopic images if reactive gas emerges from the hollow
needles 59. In this case, however, the electron-microscopic images
will be generated with low intensity of the electron beam or with a
reduced spatial resolution in order not to induce unnecessary
reactions of the reactive gas with the work piece.
[0110] Under some processing conditions it is desired to provide a
high gas pressure in the processing chamber in order to avoid
undesired local electrostatic charges of the work piece 3. The
controller 37 then switches the material processing system to an
operating mode in which the turbo molecular pump 9 evacuating the
processing chamber 7 is set out of operation. The processing
chamber 7 is then only evacuated by the pre-vacuum pump not shown
in FIG. 1 of the turbo molecular pump 9. In this case, the gas
pressure in the processing chamber may increase to about 1
mbar.
[0111] In the following, variants of the embodiment explained above
with reference to FIGS. 1 to 4 will be described. Those components
which correspond to each other as regards their structure and
function are designated by the same reference numbers as in FIGS. 1
to 4, however, supplemented by an additional letter for the purpose
of distinction. Reference is taken to the entire previous
description.
[0112] A material processing system 1a shown in FIG. 5 again
comprises a processing chamber 7a in which a work piece 3a is
disposed on a work piece holder 5a such that a surface 21a of the
work piece 3a is disposed in an object plane of an electron
microscope 15a.
[0113] Further, a gas supply arrangement 53a is provided to eject
plural reactive gases near a location of processing which is
disposed in a region around the main axis 17a of the electron
microscope 15a.
[0114] The electron microscope 15a also comprises a steel tube 43a
which tapers downwardly and terminates in the direction of the work
piece 3a in a radially extending collar 45a. An apertured electrode
47a is again disposed between the collar 45a and the work piece 3a.
In contrast to the above-described embodiment, this apertured
electrode 47a also serves as pressure diaphragm for separating
vacuum sections. To this end, the apertured electrode 47a has an
inner diameter of 200 .mu.m. Although this small aperture diameter
limits the image field of the electron microscope, such a
configuration involves other advantages.
[0115] The apertured electrode 47a extends parallel to the surface
of the work piece 3a at a distance d.sub.1 of 300 .mu.m. The
apertured electrode 47a is further provided with an annular
projection 141 extending spaced apart from the main axis 17a of the
electron microscope 15a and having a planar surface 143 disposed
towards the surface of the work piece 3a and thus towards the
object plane 19a. A distance d.sub.2 between the planar surface 143
and the specimen surface or object plane 19a is 75 .mu.m.
Accordingly, a vacuum subsection 143 is formed between the
apertured electrode 47a and the work piece, in which vacuum section
143 hollow needles 57a of the gas supply arrangement 53a terminate.
To this end, the hollow needles 57a extend through the apertured
electrode 47a from above. The vacuum subsection 143 is sealed from
the other vacuum section of the processing chamber 7a by the
projection 141. However, a certain leakage rate is provided by the
gap d.sub.2 between the planar surface 143 and the surface of the
work piece 3a, as it is intimated by the arrows 147 in FIG. 6.
[0116] By separating the vacuum subsection 143, it is possible to
provide particularly high partial pressures of the reactive gases
for processing the work piece 3a and, as a result, to achieve high
reaction rates. As the subsection 143 is small as compared to the
processing chamber 7a, this enables also an economical use of the
reactive gas.
[0117] FIG. 7 schematically shows a variant of the embodiment shown
in FIGS. 5 and 6. Here, an apertured electrode 47b carries at its
projection 141b protruding axially towards the object plane a
sealing ring 151 made of the material "Viton" or another suitable
elastomeric material which is suitable for abutment against the
work piece. The material of the sealing ring 151 is selected such
that the work piece 3b is not damaged by a displacement of the work
piece relative to the apertured electrode 47b.
[0118] The subsection 143 can be evacuated in that the work piece
holder, together with the work piece 3b mounted thereon, is lowered
such that a sufficient distance is provided between the sealing
ring 151 and the surface 21b of the work piece 3b to enable the gas
to flow out into the subsection 143. Alternatively, it is also
possible to provide a connecting suction piece 171 at the apertured
electrode 47b. The connecting suction piece 171 extends away from
the apertured electrode 47 in the direction of the object plane 19b
and is closed by a switchable valve 173 which, in its opened
position, connects the subsection 143 to the vacuum section of the
processing chamber and, in its closed position, separates these two
vacuum sections from each other.
[0119] FIG. 8 shows a variant of a valve of a gas supply
arrangement. In contrast to the valve shown in FIG. 3, a valve body
75c of a valve 72c shown in FIG. 8 directly seals against an inlet
end 61c of a hollow needle 57c. To this end, the valve body 75c
made of an elastomeric material is embedded in a holder 161 which
is connected to a rod 81c for actuation of the valve 72c. The
hollow needle 57c projects with its inlet end 61c through an end
wall 63c of a tube 65c into the interior of the tube 65c such that
an end face of the inlet end 61c of the hollow needle 57c can be
brought in direct contact with the valve body 75c to block a gas
flow out of the interior of the tube 65c into the hollow needle
57c.
[0120] In this embodiment of the valve 72c, a magnitude 4 c = V A
l
[0121] has a value of 1.0, wherein
[0122] A is an inner cross-section of the hollow needle 57c,
[0123] l is a distance between the valve body 75c and the outlet
end 59c of the hollow needle 57c and
[0124] V is a volume between the outlet end 59c and the valve body
75c.
[0125] In this embodiment, a residual volume to be emptied after
the valve has been closed is reduced to a minimum so that a
reaction of the reactive gas with the work piece after the valve
72c has been closed is reduced to a minimum as well.
[0126] FIG. 9 shows a variant of the gas supply arrangement shown
in FIG. 2. In this embodiment, the gas supply into the tube to
which the hollow needle is mounted is modified.
[0127] In a gas supply arrangement 53c shown in FIG. 9, the
reactive gas to be supplied is delivered to a tube 65c via a
connecting piece 89c. In the tube 65c, a rod 81c is held for
actuation of a valve body not shown in FIG. 9. The tube 65c extends
through a flange 95c and is mechanically fastened to the same.
[0128] One end of the tube 65 is connected in vacuum-tight manner
to a bellow 103c. The bellow connects over an intermediate tube
piece 181 in vacuum-tight manner to a cross beam 183. The
intermediate tube piece 181 and the cross beam 183 may be
connected, for example, by welding. The rod 81c for actuation of
the valve body is likewise connected by welding to the cross beam
183 within the tube 65 coaxially to the cross beam 183. The cross
beam 183 is fixed to a cylinder 85c of a piston cylinder unit, the
piston 83c of which is coupled via a rod 106c to the flange 95c. By
supplying compressed air via connections 87c to the piston cylinder
unit, the piston 83c can be shifted within the cylinder 85c. This
likewise causes the rod 81c to be displaced within the tube 83c,
because the bellow 113 is compressible.
[0129] The connection 89c for the gas to be supplied is likewise
connected in vacuum-tight manner on the side of the cross beam 183
disposed away from the intermediate tube piece 181. Openings 185
extend through the cross beam such that the gas can pass from the
connecting piece 89c into the interior of the tube 85c.
[0130] In the temperature-adjusting apparatus described with
reference to FIG. 2, a cooling liquid or heating liquid passes
through a plurality of coils and respectively transfers coldness or
heat directly to the interior of the reservoir. However, it is also
possible to interpose, for example, Peltier elements to achieve
even lower temperatures within the reservoir.
[0131] The above-described material processing system can be
applied as follows. The material processing system is used for
processing a work piece, especially for repairing a photo mask. The
process is fully automated, preferably by means of a control
computer for controlling the components of the material processing
system. A photo mask exhibiting defects is first scanned by means
of a conventional optical system or an optical system using a
corpuscular beam, for example, an AIMS device, to thus determine
the coordinates of the mask defects. The data representing these
coordinates are input into the control computer and converted in
the control computer by means of an input translator of the control
computer into a data format suitable for the material processing
system. The photo mask to be processed is introduced manually,
semi-automatically or automatically into the processing chamber of
the material processing system. It is particularly preferred for
the photo mask to be transferred to an inlet station of the
processing system in a container usually used for the mask
transport, such as a so-called "SMF box", by means of a
computer-controlled mask loader. The photo mask is then introduced
into the inlet station and removed from the container in order to
be immediately transferred to the processing chamber of the
material processing system or to be placed in an outlet station of
the material processing system for further processing. When the
photo mask is accommodated in the processing chamber, the defective
locations of the photo mask can be located, i.e., positioned into
the area of the electron beam, on the basis of the defect
coordinates by shifting the work piece holder carrying the photo
mask. The position of the work piece relative to the electron
microscope is controlled with the aid of the laser interferometers.
The electron beam then scans the surface of the work piece to
obtain a highly resolved image of the defective location to be
currently processed. Furthermore, with the aid of an energy
dispersive X-ray detection system (EDX system), a characterization
of the materials, especially an element analysis, can be effected
at the surface of the defective locations of the photo mask. The
imaging and/or EDX analysis can be effected manually,
semi-automatically or fully automatically. On the basis of the data
determined by the electron optical imaging and/or EDX analysis and
a comparison of these data with reference data available in the
control computer, a magnitude of a defect to be repaired is
determined by the control computer. The steps required for
repairing the defective dimension are determined by the control
computer by allocating the defective dimension to a repair process
and repair parameters stored in the control computer. The steps
required for repairing the defective location and the parameters of
the repair process, especially the selection of the gases to be
supplied, the timing of the gas supply, the pointing of the
electron beam with a predetermined energy value to the defective
location of the photo mask, are preferably performed automatically
by the control computer. After the chemical reaction induced by the
electron beam at the defective photo mask has been terminated, the
thus processed defective location is again electron-optically
scanned and imaged. The obtained image is compared with the
reference image by means of the control computer, and, in case the
images deviate from each other to a predetermined degree, further
repair steps are performed or the photo mask repair is terminated
and the repaired photo mask is provided as final product of the
process for further use.
[0132] The above-described system and method are preferably applied
for processing and repairing photo masks used in lithographic
processes. As already mentioned, the photo mask may be a phase
shifting mask.
[0133] However, it is also contemplated to process binary masks in
which the structures are formed, for example, by portions including
chromium which are deposited on a glass substrate or SiO.sub.2
substrate. These masks can also comprise so-called "proximity
corrections", i.e., particularly small structures which are
resolvable by means of the electron microscope.
[0134] However, other work pieces, such as micro-mechanical
components or the like, can also be processed with the system.
[0135] It is also contemplated to use the above-described gas
supply not only in combination with an electron microscope but also
in combination with other energy beams, such as ion beams or photon
beams.
[0136] Further, the above-described technique wherein the reservoir
for the starting material is cooled can also be used in gas
supplies which do not use a hollow needle or which do not comprise
an on-off valve, but, for example, a dosing valve.
[0137] In summary, a material processing system for processing a
work piece is provided. The material processing is effected by
supplying a reactive gas and energetic radiation for activation of
the reactive gas to a surrounding of a location of the work piece
to be processed. The radiation is preferably provided by an
electron microscope. An objective lens of the electron microscope
is preferably disposed between a detector of the electron
microscope and the work piece. A gas supply arrangement of the
material processing system comprises a valve disposed spaced apart
from the processing location, a gas volume between the valve and a
location of emergence of the reaction gas being small. The gas
supply arrangement further comprises a temperature-adjusted,
especially cooled reservoir for accommodating a starting material
for the reactive gas.
[0138] The present invention has been described by way of exemplary
embodiments to which it is not limited. Variations and
modifications will occur to those skilled in the art without
departing from the scope of the present invention as recited in the
appended claims and equivalents thereof.
* * * * *