U.S. patent application number 10/986615 was filed with the patent office on 2005-04-21 for magnetoresistive random access memory (mram) cell having a diode with asymmetrical characteristics.
Invention is credited to Nahas, Joseph J., Subramanian, Chitra K..
Application Number | 20050083760 10/986615 |
Document ID | / |
Family ID | 32325261 |
Filed Date | 2005-04-21 |
United States Patent
Application |
20050083760 |
Kind Code |
A1 |
Subramanian, Chitra K. ; et
al. |
April 21, 2005 |
Magnetoresistive random access memory (MRAM) cell having a diode
with asymmetrical characteristics
Abstract
In a magnetoresistive random access memory (MRAM), a magnetic
tunnel junction (MTJ) (54) cell is stacked with an asymmetric
tunnel device (56). This device, when used in a crosspoint MRAM
array, improves the sensing of the state or resistance of the MTJ
cells. Each MTJ cell has at least two ferromagnetic layers (42, 46)
separated by an insulator (44). The asymmetric tunnel device (56)
is electrically connected in series with the MTJ cell and is formed
by at least two conductive layers (48, 52) separated by an
insulator (50). The asymmetric tunnel device may be a MIM (56),
MIMIM (80) or a MIIM (70). Asymmetry results from conducting
electrons in a forward biased direction at a significantly greater
rate than in a reversed biased direction. Materials chosen for the
asymmetric tunnel device are selected to obtain an appropriate
electron tunneling barrier shape to obtain the desired rectifying
current/voltage characteristic.
Inventors: |
Subramanian, Chitra K.;
(Austin, TX) ; Nahas, Joseph J.; (Austin,
TX) |
Correspondence
Address: |
FREESCALE SEMICONDUCTOR, INC.
LAW DEPARTMENT
7700 WEST PARMER LANE MD:TX32/PL02
AUSTIN
TX
78729
US
|
Family ID: |
32325261 |
Appl. No.: |
10/986615 |
Filed: |
November 12, 2004 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10986615 |
Nov 12, 2004 |
|
|
|
10304625 |
Nov 26, 2002 |
|
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Current U.S.
Class: |
365/222 ;
257/E27.004; 257/E27.005 |
Current CPC
Class: |
H01L 27/224 20130101;
G11C 11/16 20130101 |
Class at
Publication: |
365/222 |
International
Class: |
G11C 007/00 |
Claims
1-10. (canceled)
11. A method of forming a non-volatile memory cell comprising:
providing a bit line; providing a word line; coupling one of the
bit line or the word line to a magnetic tunnel junction (MTJ)
storage element, the magnetic tunnel junction (MTJ) storage element
having at least a first ferromagnetic layer, an insulating layer
and a second ferromagnetic layer; and coupling an asymmetric tunnel
device to one of the word line or the bit line and in series with
the MTJ storage element, the asymmetric tunnel device being
asymmetric by conducting electrons in a forward biased direction at
a significantly higher rate than in a reversed biased
direction.
12. The method of claim 11 further comprising: forming the
asymmetric tunnel device by providing a first metal layer,
providing an overlying insulating layer and providing an overlying
second metal layer to form a metal-insulator-metal (MIM)
device.
13. The method of claim 11 further comprising: forming the
asymmetric tunnel device by providing a first metal layer,
providing an overlying first insulating layer, providing an
overlying second metal layer, providing an overlying second
insulating layer and providing an overlying third metal layer to
form a metal-insulator-metal-insulator-metal (MIMIM) device.
14. The method of claim 11 further comprising: forming the
asymmetric tunnel device by providing a first metal layer,
providing an overlying first insulating layer, providing an
overlying second insulating layer, and providing an overlying
second metal layer to form a metal-insulator-insulator-metal (MIIM)
device.
15. The method of claim 11 further comprising: forming the
asymmetric tunnel device by forming a first layer, the first layer
comprising tantalum, forming a second layer, the second layer
comprising at least one of titanium oxide, strontium titanate,
tantalum pentoxide and strontium bismuth tantalate
(SrBi.sub.2Ta.sub.2O.sub.9), and forming a third layer, the third
layer comprising titanium nitride.
16. The method of forming the non-volatile memory cell of claim 11
further comprising: forming a plurality of non-volatile memory
cells, each of the plurality of non-volatile memory cells having a
respective magnetic tunnel junction and asymmetric tunnel device,
by first forming all layers of all the plurality of non-volatile
memory cells' magnetic tunnel junctions and asymmetric tunnel
devices prior to removing excess layer material between desired
locations of the plurality of non-volatile memory cells using a
single mask.
17-24. (canceled)
Description
FIELD OF THE INVENTION
[0001] The invention relates to magneto-resistive random access
memories (MRAMs), and more particularly to MRAM cells having a
diode.
RELATED ART
[0002] MRAMs are attractive due to being non-volatile and
relatively high speed. In any memory, especially large memories,
cell density is a significant issue. A smaller cell results in a
smaller array for a given memory size. The smaller array results in
less area being occupied, which in turn, results in lower cost. One
of the higher density memories is constructed by simply connecting
the cell, which is the magnetic tunnel junction (MTJ), between the
word line and the bit line. This type of memory is known to be
dense, but difficulties with being able to provide enough sense
signal differentiation in the light of the many alternative current
paths in the deselected cells has made such memories difficult to
manufacture on a commercial basis.
[0003] One technique to overcome this has been to use a non-linear
device in series with the MTJ. The non-linear device provides a
first current level at one voltage, but significantly less than
half this current at half the voltage. The intent is for this
non-linear device to operate in the higher current regime for the
selected cells and the lower current regime for the unselected
cells. One of the difficulties of this approach is obtaining
sufficient non-linearity to provide a sufficient current
differential between the selected and unselected cells.
[0004] Thus, there is a need to provide a high density memory array
that provides improved margin between the selected and unselected
cells.
BRIEF DESCRIPTION OF THE DRAWINGS
[0005] The present invention is illustrated by way of example and
not limited by the accompanying figures, in which like references
indicate similar elements, and in which:
[0006] FIG. 1 is a block diagram of a memory for using one of the
memory cell types according to various embodiments of the
invention;
[0007] FIG. 2 is a cross section of a memory cell useful in the
memory of FIG. 1 according to a first embodiment of the
invention;
[0008] FIGS. 3-5 are barrier height diagrams helpful in
understanding the operation of the memory cell of FIG. 2;
[0009] FIG. 6 is a graph of current versus voltage showing the
asymmetric property of the memory cell of FIG. 2;
[0010] FIG. 7 is a cross section of a memory cell useful in the
memory of FIG. 1 according to a second embodiment of the invention;
and
[0011] FIG. 8 is a cross section of a memory cell useful in the
memory of FIG. 1 according to a third embodiment of the
invention.
[0012] Skilled artisans appreciate that elements in the figures are
illustrated for simplicity and clarity and have not necessarily
been drawn to scale. For example, the dimensions of some of the
elements in the figures may be exaggerated relative to other
elements to help improve the understanding of the embodiments of
the present invention.
DETAILED DESCRIPTION OF THE DRAWINGS
[0013] A magneto-resistive random access memory (MRAM) uses memory
cells connected between rows and columns without requiring a
selection transistor. The memory cell comprises a single stack
having both a magnetic tunnel junction (MTJ)and an asymmetric
device. Because the asymmetric device is conveniently made in the
same stack as the MTJ, the addition of the asymmetric device does
not sacrifice high density and is achieved with relatively little
increased complexity. Being asymmetric, the asymmetric device
effectively reduces the parasitic leakage from the unselected cells
even with the reverse bias on the asymmetric device of the
unselected cells being of a greater magnitude than the forward bias
on the asymmetric device of a selected cell. This is better
understood with reference to the drawings and the following
description.
[0014] Shown in FIG. 1 is a memory 10 having an array 12, a row
decoder and drivers 14, and a column decoder and sense amplifier
16. Array 12 comprises memory cells 18, 20, 22, and 24, word lines
26 and 28 coupled to row decoder and drivers 14, and bit lines 30
and 32 coupled to column decoder and sense amplifier 16. Memory
cells 18-24 have a MTJ with additional features that make it
asymmetric in operation. Thus, each cell may be considered an
asymmetrical magnetic tunnel junction (AMTJ). Only four memory
cells are shown for memory 10 for simplicity, but it is understood
that many more cells, word lines, and bit lines would be shown if
an entire memory were shown. Cell 18 has an input connected to word
line 26 and an output coupled to bit line 30. Cell 20 has an input
connected to word line 26 and an output coupled to bit line 32.
Cell 22 has an input connected to word line 28 and an output
coupled to bit line 30. Cell 24 has an input connected to word line
28 and an output coupled to bit line 32.
[0015] In a read operation a bias voltage, for example 500
millivolts (mV), is applied to the selected bit line and ground to
the selected word line. The unselected bit lines are at the bias
voltage and the unselected word lines are also maintained at the
bias voltage, 500 mV. The selected cell then has the bias voltage
applied across it. For example, if cell 18 is selected for reading,
then word line 26 is grounded, word line 28 is at the bias voltage,
bit line 30 is at the bias voltage, and bit line 32 is at the bias
voltage. Thus, the selected cell is forward biased from bit line 30
to word line 26, and the state of memory cell 18 is detected based
on the current flowing therethrough. The unselected cells are
substantially not biased. Cell 24 is substantially not biased with
word line 28 at the bias voltage and bit line 32 at the bias
voltage. Cell 20 is forward biased with word line 26 grounded and
bit line 32 at the bias voltage. Cell 22 is not biased with both
word line 28 and bit line 30 at the bias voltage.
[0016] Effectively, all of the cells on the selected word line are
treated the same. Selection is actually based on which of the bit
lines are chosen for sensing. Due to the current through a cell on
each bit line, there is some voltage drop on these bit lines. This
is made as small as reasonably possible, but it is not zero.
Further, the voltage drop on each bit line is somewhat different
because the state of the cells on the selected word line is
variable from bit line to bit line. Also the voltage on the
selected word line is not same for each cell because of current
flowing through the word line. This voltage drop is made to be as
small as reasonably possible but this drop is also not zero. Due to
these voltage drops on the bit lines, unselected cells are also
biased. The biasing then generates currents on the unselected word
lines. These parasitic currents on the unselected word lines and
bit lines degrade to some extent the current on the selected bit
line, making it more difficult to accurately detect the state of
the cell. Even though these parasitic currents can flow through
some forward biased cells, each parasitic path, however, has at
least one reverse biased cell in it.
[0017] Other alternatives may be used to operate the memory. For
example, the unselected bit lines can be left floating instead of
being at the bias voltage. The voltage on bit lines would not be
truly floating because the memory cells, which are at least a
little conductive even in the reverse bias condition, would provide
a path to the word lines, which are biased to a specific
voltage.
[0018] FIG. 2 shows a memory cell 40 for use as memory cells 18-24.
Memory cell 40 comprises a stack of layers shown in cross section.
The thicknesses are not to scale, but each is of nearly the same
lateral dimension. These layers can be etched using a single mask.
The top three layers, 42, 44, and 46 comprise a MTJ 54. These three
layers 42, 44, and 46 are preferably a ferromagnetic layer,
aluminum oxide, and a ferromagnetic layer, respectively and are
well known to skilled artisans. These are shown as a free layer 42,
a barrier 44, and a fixed layer 46. The fixed layer 46 is a fixed
permanent magnet and free layer 42 can be programmed to one
magnetic state or another. These two different magnetic states in
combination with the barrier and fixed layer result in a variation
in resistance that can be measured. In addition to the MTJ 54, the
stack has an asymmetric tunnel device 56 comprised of layers 48,
50, and 52. These three layers 48, 50, and 52 are preferably
titanium nitride, titanium oxide, and, tantalum respectively. These
three materials provide a combination of work functions that result
in an asymmetric behavior with respect to application of a voltage.
In the forward direction, when layer 52 is biased to a positive
voltage, e.g., the bias voltage of 500 mV, with respect to layer
48, the current is about 100 times the current that flows when the
same magnitude of bias voltage is applied in the reverse direction.
This was analyzed with respect to a 256.times.256 memory and the
result was only a 5% reduction in sensing signal compared to that
of a single memory cell that is not part of an array.
[0019] Shown in FIGS. 3, 4, and 5 are energy band diagrams that
illustrate the origin of the asymmetric conduction mechanism. The
difference in work function between insulator 50 and layer 48 is
shown as barrier height .PHI..sub.M1 in FIG. 3, which shows the
situation in which there is no bias voltage between layers 48 and
52. Similarly the difference in work function between insulator 50
and layer 52 is shown as barrier height .PHI..sub.M2 in FIG. 3. The
materials for layers 48 and 52 and insulator 50 are chosen so that
barrier height .PHI..sub.M1 is much greater than barrier height
.PHI..sub.M2 to achieve the desired asymmetry. FIG. 4 shows the
case in which layer 52 is biased to a positive voltage compared to
layer 48. This shows the resulting barrier for electrons tunneling
from layer 48 to layer 52 is sharply triangular, thereby
facilitating electron transport (opposite direction from current
flow) from layer 48 to layer 52. Shown in FIG. 5 is the reverse
bias condition in which layer 48 is biased to the positive voltage
relative to layer 52. In this case the barrier for electron
tunneling from layer 52 to layer 48 is limited to direct tunneling
due to the square barrier shape. The result is that the electrons
tunnel at a rate that is about 100 times less than that for the
forward biased condition shown in FIG. 4.
[0020] Materials for layer 48, layer 50, and layer 52 are chosen so
that the barrier height of layer 48 with respect to layer 50 and
the barrier height of layer 52 with respect to layer 50 are both in
the range of zero to 0.6 eV. Furthermore, the materials are chosen
so that the difference in these two barrier heights is also 0.2 to
0.6 eV. This ensures that even with the small allowed voltages
across the MTJs of the cells, there is a two order of magnitude
difference between the currents in the forward and reverse bias
direction. For this example of layer 48 being titanium nitride,
layer 50 being titanium oxide, and layer 52 being tantalum, the
barrier height .PHI..sub.M1 is 0.53 eV and .PHI..sub.M2 is 0.14 eV
so that the barrier height between layers 48 and 52 is 0.39 eV. The
thickness of insulator 50 must be such that the forward bias
resistance of asymmetric device 56 is preferably less than or equal
to the resistance of MTJ 54. It is beneficial that the forward bias
resistance of the asymmetric device not make up a high percentage
of the total resistance of the cell and also that the reverse bias
resistance of the asymmetric device be large in relation to that of
the MTJ. The thicknesses of the metal layers are not particularly
significant, 100 Angstroms is an effective thickness. The thickness
of the insulator layer 50 may be 30 Angstroms for this example.
Other insulators that should be effective as substitutes for
titanium oxide include strontium titanate, tantalum pentoxide,
strontium bismuth tantalate. Other alternatives that meet the above
criteria may be used as substitutes for the metal layers as well.
Metals that can be effective when properly chosen according to the
above criteria include titanium, copper, and iron.
[0021] Shown in FIG. 6 is the current versus voltage plot for the
forward and reverse bias conditions of asymmetric device 56 for the
case in which the resistance of the MTJ and the forward bias
resistance of the asymmetric device are equal. In such case the
bias condition on the asymmetric device is half that of the total
bias on the cell. This voltage is shown as 1/2 V.sub.bias in FIG.
6. Whereas in operation, the reverse bias condition results in a
very small current, even if the reverse bias is a full V.sub.bias
which explains, even with all of the various leakage paths, the
parasitic current degraded the actual cell current by only 5% for a
256.times.256 array.
[0022] Shown in FIG. 7 is an alternative memory cell 70 having a
MTJ 71 and an asymmetric device 78 comprising a metal layer 72
under MTJ 71, an insulator layer 73 under layer 72, an insulator
layer 74 under layer 73, and a metal layer 75 under layer 74. In
this case insulator layers 73 and 74 have a barrier heights and
thicknesses that can be selected to provide an even greater
difference between forward and reverse currents. An effective
example for layers 72, 73, 74, and 75 is titanium nitride, tantalum
pentoxide, titanium oxide, and tantalum respectively. The thickness
of the metal layers is not particularly significant, 100 Angstroms
thickness would be effective. Insulator layer 73 has a barrier
height with respect to the metal layers 72 and 75 that is greater
than the barrier height of insulator layer 74 with respect to these
same metals. Using a relatively small thickness for insulator layer
73, for example 20 Angstroms, and a relatively large thickness for
layer 74, for example 100 Angstroms, generates asymmetric behavior
of current flow in response to an applied voltage. For the case in
which terminal 77 is positive with respect to terminal 76 (forward
bias), electrons tunnel through the layer 72 in a manner analogous
to that shown in FIG. 4. Also the voltage differential is chosen to
be sufficient that under this bias, insulator 74 does not present a
barrier to electron flow because the electron energy is greater
than the conduction band energy insulator 74. In the opposite
direction, with terminal 76 positive with respect to terminal 77
(reverse bias), insulator layer 74 provides a barrier to electron
tunneling. Although the barrier is relatively low, the thickness is
relatively large so that even this low barrier greatly restricts
the number of electrons that can tunnel. In addition, these
electrons lack the energy required to cross the high barrier
presented by insulator layer 73 as well. This results in much less
reverse bias current compared to forward bias current.
[0023] Shown in FIG. 8 is another alternative memory cell 80 having
a MTJ 81 and an asymmetric device 89 comprising a metal layer 82
under MTJ 81, an insulator layer 83 under metal layer 82, a metal
layer 84 under insulator layer 83, an insulator layer 85 under
metal layer 84, and a metal layer 86 under insulator layer 85. This
has the effect of multiplying two asymmetric devices together. The
preferred approach is to have a relatively high barrier through
insulator 83 in the forward direction so that any electrons passing
that barrier will also pass through the relatively low barrier
through insulator 85. In the reverse direction, the combined effect
of the two barriers is virtually impenetrable. An effective example
for layers 82, 83, 84, 85 and 86 are titanium nitride, tantalum
pentoxide, titanium, titanium oxide, and tantalum respectively. For
this particular example, the barrier height from titanium nitride
to tantalum pentoxide is 0.89 eV, the barrier height from titanium
to tantalum pentoxide is 0.57 ev, the barrier height from titanium
to titanium oxide is 0.21 ev and the barrier height from tantalum
to titanium oxide is 0.14 eV. The thickness of the metal layers is
not particularly significant. For example, 100 Angstroms would be
effective. The insulator thicknesses of about 30 Angstroms would be
effective.
[0024] In the foregoing specification, the invention has been
described with reference to specific embodiments. However, one of
ordinary skill in the art appreciates that various modifications
and changes can be made without departing from the scope of the
present invention as set forth in the claims below. For example,
the asymmetric devices 56, 78, and 82 can be on the other side of
MTJs, 54, 71, and 81, respectively. Similarly, the metals can be
reversed so that the forward and reverse directions are
interchanged. Accordingly, the specification and figures are to be
regarded in an illustrative rather than a restrictive sense, and
all such modifications are intended to be included within the scope
of present invention.
[0025] Benefits, other advantages, and solutions to problems have
been described above with regard to specific embodiments. However,
the benefits, advantages, solutions to problems, and any element(s)
that may cause any benefit, advantage, or solution to occur or
become more pronounced are not to be construed as a critical,
required, or essential feature or element of any or all the claims.
As used herein, the terms "comprises," "comprising," or any other
variation thereof, are intended to cover a non-exclusive inclusion,
such that a process, method, article, or apparatus that comprises a
list of elements does not include only those elements but may
include other elements not expressly listed or inherent to such
process, method, article, or apparatus.
* * * * *