U.S. patent application number 10/647716 was filed with the patent office on 2005-03-03 for magnetic random access memory designs with controlled magnetic switching mechanism.
This patent application is currently assigned to Headway Technologies, Inc.. Invention is credited to Min, Tai, Wang, Po Kang.
Application Number | 20050047241 10/647716 |
Document ID | / |
Family ID | 34216576 |
Filed Date | 2005-03-03 |
United States Patent
Application |
20050047241 |
Kind Code |
A1 |
Min, Tai ; et al. |
March 3, 2005 |
Magnetic random access memory designs with controlled magnetic
switching mechanism
Abstract
An MRAM array is formed of MTJ cells shaped so as to have their
narrowest dimension at the middle of the cell. A preferred
embodiment forms the cell into the shape of a kidney or a peanut.
Such a shape provides each cell with an artificial nucleation site
at the narrowest dimension, where an applied switching field can
switch the magnetization of the cell in manner that is both
efficient and uniform manner across the array.
Inventors: |
Min, Tai; (San Jose, CA)
; Wang, Po Kang; (San Jose, CA) |
Correspondence
Address: |
STEPHEN B. ACKERMAN
28 DAVIS AVENUE
POUGHKEEPSIE
NY
12603
US
|
Assignee: |
Headway Technologies, Inc.
|
Family ID: |
34216576 |
Appl. No.: |
10/647716 |
Filed: |
August 25, 2003 |
Current U.S.
Class: |
365/222 |
Current CPC
Class: |
G11C 11/16 20130101 |
Class at
Publication: |
365/222 |
International
Class: |
G11C 007/00 |
Claims
What is claimed is:
1. A magnetic tunnel junction (MTJ) cell, said cell comprising: a
shape having smoothly curved ends to prevent thereat the formation
of magnetic poles and discontinuities, and; a shape having its
narrowest dimension at its middle and having thereat an artificial
nucleation site for creating a lowered threshold for magnetization
switching by an external magnetic field and a reduced sensitivity
to defects and shape irregularities; and said cell having a
crystalline anisotropy.
2. The MTJ cell of claim 1 further comprising: a ferromagnetic free
layer; an insulating tunneling layer formed on said free layer; a
multi-layered magnetically pinned layer formed on said tunneling
layer, said pinned layer further comprising: a first ferromagnetic
layer adjacent to said tunneling layer; a non-magnetic coupling
layer formed on said first ferromagnetic layer; a second
ferromagnetic layer formed on said coupling layer; an
antiferromagnetic pinning layer formed on said second ferromagnetic
layer; and said multi-layered magnetically pinned layer has a net
magnetic moment which is substantially zero as a result of the
magnetic moments of said first and second ferromagnetic layers
being substantially equal and strongly magnetically coupled in an
anti-parallel configuration.
3. The cell of claim 2 wherein said free magnetic layer is a
multilayer comprising a third and fourth ferromagnetic layer
separated by a non magnetic spacer layer and wherein the
magnetizations of said ferromagnetic layers are substantially equal
and may be weakly or strongly coupled in antiparallel directions to
produce a substantially zero net magnetic moment.
4. The cell of claim 2 or 3 wherein the tunneling layer is a layer
of insulating material chosen from the group of insulating
materials consisting of as Al.sub.2O.sub.3, ZrO.sub.2 or HfO.sub.2
and combinations thereof.
5. The cell of claim 4 wherein the tunneling layer is a layer of
Al.sub.2O.sub.3 formed to a thickness of between approximately 5
and 50 angstroms.
6. The cell of claim 2 or 3 wherein the coupling layer is a layer
chosen from the group of non-magnetic coupling materials consisting
of Rh, Ru, Cr and Cu.
7. The cell of claim 6 wherein the coupling layer is a layer of Ru
formed to a thickness of between approximately 5 and 50
angstroms.
8. The cell of claim 2 or 3 wherein the antiferromagnetic pinning
layer is a layer chosen from the group of antiferromagnetic
materials consisting of PtMn, NiMn, OsMn, IrMn, NiO, FeMn and
CoNiO.
9. The cell of claim 8 wherein said pinning layer is a layer of
PtMn formed to a thickness between approximately 30 and 300
angstroms.
10. The cell of claim 2 wherein the ferromagnetic free layer and
the first and second ferromagnetic layers of the pinned layer are
formed of ferromagnetic materials chosen from the group of
ferromagnetic materials consisting of CoFe, NiFe, CoNiFe, CoZrTa,
CoFeB and CoHfTa.
11. The cell of claim 3 wherein said first, second, third and
fourth ferromagnetic layers of the pinned layer are formed of
ferromagnetic materials chosen from the group of ferromagnetic
materials consisting of CoFe, NiFe, CoNiFe, CoZrTa, CoFeB, CoZrTa,
CoNbTa and CoHfTa.
12. The cell of claim 1, 2 or 3 wherein each segment of said cell
is shaped by a process comprising photolithography and
ion-milling.
13. The cell of claim 1, 2 or 3 wherein the shape is approximately
that of a peanut or a kidney.
14. The MTJ cell of claim 3 wherein the ratio of length to width of
the cell is between 1 and 10.
15. The cell of claim 13 wherein the crystalline anisotropy of the
cell is along its narrowest dimension.
16. A method for fabricating a magnetic tunnel junction (MTJ) cell,
said cell having a narrow dimension at its middle whereat
artificial nucleation sites for magnetization switching are formed
and said cell having a reduced sensitivity to defects and shape
irregularities comprising: forming an MTJ layered stack, the
magnetic layers of said stack having a common crystalline
anisotropy; patterning within said stack, by photolithograpy and
ion-milling methods, at least one MTJ cell having a narrow
dimension at its middle.
17. The method of claim 16 wherein the method of forming the MTJ
stack further comprises: forming a ferromagnetic free layer;
forming an insulating tunneling layer on said free layer; forming a
multi-layered magnetically pinned layer on said tunneling layer,
said pinned layer formation further comprising: forming a first
ferromagnetic layer adjacent to said tunneling layer; forming a
non-magnetic coupling layer on said first ferromagnetic layer;
forming a second ferromagnetic layer on said coupling layer;
forming an antiferromagnetic pinning layer on said second
ferromagnetic layer, wherein said multi-layered magnetically pinned
layer has a net magnetic moment which is substantially zero as a
result of the magnetic moments of said first and second
ferromagnetic layers being substantially equal and strongly
magnetically coupled in an anti-parallel configuration.
18. The method of claim 17 wherein said free magnetic layer is
formed as a multilayer comprising a third and fourth ferromagnetic
layer separated by a non magnetic spacer layer and wherein the
magnetizations of said ferromagnetic layers are substantially equal
and may be weakly or strongly coupled in antiparallel directions to
produce a substantially zero net magnetic moment.
Description
RELATED PATENT APPLICATION
[0001] This application is related to Docket No. HT02-015, filing
date ( ), assigned to the same assignee as the current
invention.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] This invention relates to the use of magnetic tunnel
junctions (MTJ) as storage elements (cells) in non-volatile memory
cell arrays, called magnetic random access memories (MRAM). In
particular it relates to MRAM arrays whose cells have their
narrowest dimension at or near their middle regions whereat they
serve as nucleation sites for magnetization switching between
multi-stable states.
[0004] 2. Description of the Related Art
[0005] The magnetic tunnel junction (MTJ) basically comprises two
electrodes, which are layers of ferromagnetic material, the
electrodes being separated by a tunnel barrier layer, which is a
thin layer of insulating material. The tunnel barrier layer must be
sufficiently thin so that there is a probability for charge
carriers (typically electrons) to cross the layer by means of
quantum mechanical tunneling. The tunneling probability is spin
dependent, depending on the orientation of the electron spin
relative to the magnetization direction of the ferromagnetic
layers. Thus, if these magnetization directions are varied, the
tunneling current will also vary as a function of the relative
directions for a given applied voltage. As a result of the behavior
of an MTJ, sensing the change of tunneling current for a fixed
potential can enable a determination of the relative magnetization
directions of the two ferromagnetic layers that comprise it.
Equivalently, the resistance of the MTJ can be measured, since
different relative magnetization directions will produce different
resistances.
[0006] The use of an MTJ as an information storage device requires
that the magnetization of at least one of its ferromagnetic layers
can be varied relative to the other and also that changes in the
relative directions can be sensed by means of variations in the
tunneling current or, equivalently, the junction resistance. In its
simplest form as a two state memory storage device, the MTJ need
only be capable of having its magnetizations put into parallel or
antiparallel configurations (writing) and that these two
configurations can be sensed by tunneling current variations or
resistance variations (reading). In practice, the free
ferromagnetic layer can be modeled as having a magnetization which
is free to rotate but which energetically prefers to align in
either direction along its easy axis. The magnetization of the
fixed layer may be thought of as being permanently aligned in its
easy axis direction (the direction of crystalline magnetic
anisotropy). When the free layer is anti-aligned with the fixed
layer, the junction will have its maximum resistance, when the free
layer is aligned with the fixed layer, the minimum resistance is
present. In typical MRAM circuitry, the MTJ devices are located at
the intersection of current carrying lines called word lines and
bit lines (or word lines and sense lines). When both lines are
activated, the device is written upon, ie, its magnetization
direction is changed. When only one line is activated, the
resistance of the device can be sensed, so the device is
effectively read. In this regard, Bronner et al. (U.S. Pat. No.
6,242,770 B1) teaches a method for forming thin film conductors as
word and bit lines so that the MTJ device is in close proximity to
a lower line and a diode is located below that line.
[0007] In order for the MTJ MRAM device to be competitive with
other forms of DRAM, it is necessary that the MTJ be made very
small, typically of sub-micron dimension. Such small sizes are
associated with significant problems, particularly
super-paramagnetism, which is thermal fluctuations of magnetization
produced in samples of ferromagnetic material too small to have
sufficient magnetic anisotropy (a measure of the ability of a
sample to maintain a given magnetization direction).
[0008] Another size-related problem results from non-uniform and
uncontrollable edge-fields produced by shape-anisotropy (a property
of non-circular samples). As the cell size decreases, these edge
fields become relatively more important than the magnetization of
the body of the cell and have an adverse effect on the storage and
reading of data. Although such shape-anisotropies, when of
sufficient magnitude, reduce the disadvantageous effects of
super-paramagnetism, they have the negative effect of requiring
high currents to change the magnetization direction of the MTJ for
the purpose of storing data. To counteract these edge effects, Shi
et al. (U.S. Pat. No. 5,757,695) teaches the formation of an
ellipsoidal MTJ cell wherein the magnetization vectors are aligned
along the length (major axis) of the cell and which do not present
variously oriented edge domains, high fields and poles at the ends
of the element. In a similar approach, Anthony (U.S. Pat. No.
6,205,053 B1) teaches the formation of an MTJ device having first
and second layers which are substantially "H" and "I" shaped. This
shape allows the device to assume a predictable magnetization in
spite of the variability of edge domain directions.
[0009] MTJ devices have been formed in several configurations, one
type comprising a free ferromagnetic layer separated from a fixed
(or pinned) layer. In such a configuration, the MTJ has data stored
in it by causing the magnetization of its free layer to be either
parallel or antiparallel to that of the pinned layer. The pinned
layer may itself be a composite layer formed of two ferromagnetic
layers held in an antiparallel magnetization configuration by some
form of magnetic coupling so that it presents a zero or negligible
net magnetic moment to the MTJ. Such an arrangement is advantageous
in reducing edge effects due to anisotropies.
[0010] Koch et al. (U.S. Pat. No. 6,005,800) deal with the problem
that results when writing to one specific cell also affects the
magnetization directions of adjacent cells that are not being
addressed. Koch teaches the formation of cells with two shapes,
which are mirror images of each other. The cells are arranged in a
checkerboard pattern, so that a cell of one shape is surrounded by
cells of the other shape. Since neighboring cells thereby have
their preferred magnetization vectors oriented differently, there
is a reduced probability that writing to one cell type will affect
the magnetization of the other type.
[0011] As has been discussed, many of the problems associated with
the construction of MRAM arrays are related to the shapes of the
cells. Cell shapes of prior art designs are typically single
element rectangle, elliptical or lozenge. Any irregularities of
these shapes, or defects at their edges produced during their
formation, will result in coercivity fluctuations distributed
throughout the array. It is the object of the present invention to
control the problem of undesirable edge effects more effectively
than in the prior art by forming single MTJ cell elements in a
geometric shape in which the narrowest dimension is in the middle
section of the element. This narrow region provides a nucleation
site for switching between multi-stable states in the fanning mode
and will dominate the adverse affects of unintentionally generated
shape irregularities or edge defects.
SUMMARY OF THE INVENTION
[0012] A first object of this invention is to provide a novel MTJ
device whose magnetization direction changing properties are
insensitive to shape irregularities and edge defects and which can
be used to form an MRAM array.
[0013] A second object of this invention is to provide an MRAM
array of such MTJ devices, in which array coercivity variations and
resulting switching field variations due to shape irregularities
and edge defects in the MTJ devices is eliminated or greatly
reduced.
[0014] A third object of this invention is to provide such an MRAM
array in which problems of write selectivity, ie, writing onto
unintended array locations, is eliminated or greatly reduced.
[0015] A fourth object of the present invention is to provide an
MRAM cell array whose switching properties are uniform at all
points of the array.
[0016] A fifth object of the present invention is to provide an
MRAM cell array design in which the threshold for switching is
reduced.
[0017] A sixth object of the present invention is to provide design
control of MRAM cell coercivity.
[0018] These objects will be achieved by a design method that
intentionally introduces nucleation sites in an MTJ memory cell by
using photolithography and ion-milling to form these cells with
their narrowest dimension near their middle region. These
nucleation sites then lower the switching thresholds of individual
cells in the array. The preferred embodiment of this invention
includes cell shapes which are "kidney" and "peanut" shaped, but
other shapes with narrow middle regions will also meet the objects
of the invention. The MTJ design formed for the preferred
application of this method comprises a ferromagnetic free layer
separated by an insulating tunneling junction layer from a fixed
(or pinned) layer which is a multilayer comprising a first
ferromagnetic layer having a first magnetization direction, a
non-magnetic coupling layer, a second ferromagnetic layer having a
second magnetization direction opposite to the first direction and
an antiferromagnetic layer which pins the ferromagnetic layers of
the fixed layer in their mutually antiparallel configuration. The
first and second ferromagnetic layers are directly coupled and
their thicknesses are chosen to provide a net magnetic moment of
the pinned layer which is substantially zero. The MTJ is formed as
a layered sheet, which is then patterned by photolithographic
design transfer and ion-milling into the required array of
individual cells provided by the method.
BRIEF DESCRIPTION OF THE DRAWINGS
[0019] FIGS. 1a and b are schematic illustrations of two different
design patterns of MTJ cells formed in accord with the present
invention.
[0020] FIGS. 2a and b are schematic illustrations of symbolic
magnetization vectors in a prior art single elliptical cell as
compared to analogous vectors in a peanut-shaped cell.
[0021] FIG. 2c shows the peanut shaped cell modeled as two adjacent
circles.
[0022] FIG. 3a is a schematic cross-sectional illustration of a MTJ
configuration suitable for use in a discrete cell element of the
present invention. The MTJ configuration has an
antiferromagnetically coupled fixed layer formed in accord with the
method of this invention.
[0023] FIG. 3b shows the configuration of 3a with the addition of a
multilayered free layer.
DESCRIPTION OF THE PREFERRED EMBODIMENT
[0024] The preferred embodiment of the present invention teaches a
method of forming an individual MTJ memory cell or an MRAM array of
such cells, wherein individual MTJ cells are shaped so as to have
their narrowest dimension at their middle regions. An array of such
cells thereby has a structure and design that provides a lowered
threshold for state switching and a uniformity of coercivity across
the array. The design offers at least the following three
advantages: 1) a reduction of the switching field threshold
dependence on individual cell geometry; 2) a preferred path of
switching which is a fanning mode, wherein the ends of the
magnetization vectors of individual segments are coupled at the
segment edges; 3) artificial nucleation sites produced by
segmentation and shape narrowing which provide significantly lower
switching thresholds than the uncontrollable edge and shape defects
common to unsegmented cells with prior art shapes.
[0025] Referring first to FIGS. 1a and b, there is shown two
shapes, "kidney" and "peanut," that will accomplish the objects of
the present invention.
[0026] Referring next to FIG. 2a, there is seen an elliptical
element of the prior art alongside a peanut shaped element of the
present invention. This is actually not an unreasonable comparison,
since even lozenge shaped cells often have an elliptical appearance
after they are formed by photolithographic processes. In what
follows, referring to FIG. 2a, we will consider an ellipse (10) of
aspect ratio, c/a=2, (ratio of semi-major axis, c, to semi-minor
axis, a), which can be replaced in the present invention by the
peanut shape as shown. The figure of the ellipse in FIG. 2a also
shows magnetization vectors (40) of the ellipse aligned
advantageously along the major axis and magnetization vectors (41)
and (42) disadvantageously aligned along the direction of randomly
formed edge domains (curling). The peanut shape acquires
magnetization vectors all preferentially aligned along an easy axis
and unidirectional (40) within the narrow middle region (50), yet
forming a fanning mode (head-to-tail alignment) (60) as a result of
the directional variations of the magnetization along the periphery
of the peanut shape. It is this narrow middle region (50) that will
serve as a nucleation site for low threshold magnetization
switching. In existing prior art designs, such as the ellipse of
FIG. 2a, even cell sizes smaller than a domain size will exhibit
curling of the magnetization vectors at the cell edges (41 &
42) when the cell is isolated. This curling is a result of the
reduction of magnetostatic energy within the isolated cell. If the
magnetization vectors did not curl, there would be uncompensated
poles at the ends of the cell, which is a higher magnetic energy
state. Although the peanut shape also exhibits some degree of
curling at its edges, the general formation of magnetization
vectors (60) still results in a reduced threshold of magnetization
switching.
[0027] The switching coercivity of a single elliptical cell,
H.sub.c, is given by:
H.sub.c=2K.sub.c/M.sub.s+(N.sub.a-Nc)M.sub.s.
[0028] In this expression K.sub.c is the crystalline anisotropy,
which is determined by film composition and processing conditions
and is independent of the cell geometry. The term
(N.sub.a-N.sub.c)M.sub.s represents the shape anisotropy of the
cell. For an aspect ratio c/a=2, (N.sub.a-N.sub.c)=4.6425 t/a,
where t is the film thickness. Thus the shape anisotropy is
directly proportional to M.sub.st and is inversely proportional to
feature size (represented by a).
[0029] The super-paramagnetic limit requires that, to prevent
thermal fluctuations of the magnetization, M.sub.st>50
kT/(H.sub.cS), where k is Boltzmann's constant, T is the absolute
temperature and S is the cell area (sac for an ellipse). Thus, when
scaling down cell area for high density applications and
simultaneously attempting to maintain thermal stability, the
coercivity will have to increase as a function of 1/a.sup.2 for a
constant aspect ratio. Since the magnetic field produced by the
current in the bit line is only proportional to 1/a, this means
that much more current is required at reduced cell sizes to
overcome the increasing coercivity.
[0030] For an indication of the advantages of the peanut shape, we
can approximate its magnetic properties by modeling it as two
adjacent circles, with their magnetizations (40) as shown in FIG.
2c. The coercivity of two circles is:
H.sub.c=2K.sub.c/M.sub.s+NiM.sub.s,
[0031] because the circular shape does not produce a shape
anisotropy. Instead, there is an interaction anisotropy term,
N.sub.i M.sub.s, which is given by:
N.sub.i=.pi./4t(a.sup.2/s.sup.3)=0.785 t (a.sup.2/s.sup.3),
[0032] where s is the center-to-center distance between the
circles. This term is less than 17% of the shape anisotropy
contribution, depending on the value of s. It is noted that the
coercivity of the peanut shaped cell is dominated by the
crystalline anisotropy term, 2K.sub.c/M.sub.s, whereas the
coercivity of the original ellipse was dominated by the shape
anisotropy, (N.sub.a-N.sub.c)M.sub.s. Thus, the method of the
present invention reduces the write power consumption and allows
scaling to smaller dimensions.
[0033] The greatest advantage of the present invention is the
ability it provides to control the switching mode during
magnetization reversals. In prior art designs, any imperfection of
the edge or shape of the ellipse or lozenge cells, or any defects
within the cell, will serve as a nucleation site for magnetization
switching and significantly reduce the switching threshold. Since
these defects are uncontrollable, the variations in switching
threshold will be randomly distributed among the cells in the
array. In the present invention, the edges at the inside regions of
the segments forming the cell will serve as artificial nucleation
sites for the magnetization switching. As long as the role of the
artificial sites dominates that of defects, the switching threshold
will be determined by the intentional design and not by the random
distribution of defects.
[0034] Referring to FIG. 3a, there is shown a cross-sectional view
of an MTJ segment designed to efficiently achieve the objects of
the present invention. It is understood that this segment is formed
by ion-milling and photolithographic patterning of a larger sheet
of MTJ layers as described below.
[0035] Referring to the figure, there is seen an MTJ segment formed
of a ferromagnetic free layer (10) separated by an insulating
tunneling layer (30) from a magnetically pinned layer (20). The
pinned layer is itself a multilayer, comprising a first
ferromagnetic layer (22) and a second ferromagnetic layer (26)
separated by a coupling layer (24) formed of non-magnetic coupling
materials such as Rh, Ru, Cr or Cu and formed to a thickness
between approximately 5 and 50 angstroms. Ferromagnetic layers are
preferably formed of materials such as CoFe, NiFe, CoNiFe, CoZrTa,
CoFeB or CoHfTa. The insulating tunneling layer is preferably
formed of oxides such as Al.sub.2O.sub.3, ZrO.sub.2 or HfO.sub.2
(or combinations thereof) to a thickness between approximately 5
and 50 angstroms. The magnetizations of the first and second
ferromagnetic layers are strongly coupled in antiparallel
directions and pinned by an antiferromagnetic layer (28) such as a
layer of PtMn, NiMn, OsMn, IrMn, NiO or CoNiO, positioned adjacent
to the second ferromagnetic layer and formed to a thickness between
approximately 30 and 300 angstroms. The material composition and
thicknesses of the first and second ferromagnetic layers are chosen
so that their magnetizations are essentially equal in magnitude.
Thus, when the magnetizations are fixed in opposite directions, the
net magnetic moment of the pinned layer is substantially zero.
[0036] Also within the capabilities of the present preferred
embodiment and as shown in FIG. 3b, is the formation of the
ferromagnetic free layer (10) as a multilayer comprising two
ferromagnetic layers ((11) and (12)) of opposite magnetizations
separated by a non-magnetic spacer layer (15), much as in the fixed
layer formation. By choosing the thickness of the spacer layer, the
free layer ferromagnetic layers can be coupled either weakly
(magnetostatically coupled) or strongly (exchange coupled).
[0037] It is understood that an MTJ of the type described above can
be formed into peanut and kidney shaped segments in accord with the
objects of the present invention using photolithographic and
ion-milling methods well know to those skilled in the art. In
particular, an MTJ stack is first formed as a sheet of the MTJ
layers described above and then, using photolithographic and
ion-milling processes, the sheet is patterned into appropriately
shaped cells wherein individual cells can have dimensions within an
approximate range between 0.05 and 1.5 microns. Also, as is known
by practitioners of the art, the magnetic layers of the MTJ stack
can be formed with an arbitrarily chosen direction of crystalline
anisotropy, so that the segments can be aligned with the line
joining their centers having a desired angle with the direction of
crystalline anisotropy.
[0038] As is understood by a person skilled in the art, the
preferred embodiment of the present invention is illustrative of
the present invention rather than being limiting of the present
invention. Revisions and modifications may be made to methods,
processes, materials, structures, and dimensions through which is
formed an MTJ element whose arrowest dimension is at its middle, to
provide a lowered threshold for state switching and a uniformity of
coercivity across an MRAM the array, while still providing an MTJ
element whose arrowest dimension is at its middle, to provide a
lowered threshold for state switching and a uniformity of
coercivity across an MRAM the array, formed in accord with the
present invention as defined by the appended claims.
* * * * *