Min; Tai

Patent Applications and Registrations

Patent applications and USPTO patent grants for Min; Tai.The latest application filed is for "three-dimensional magnetic device and magnetic memory".

Company Profile

6.80.67

Min; Tai - San Jose CA
Min; Tai - Shaanxi CN
Min; Tai - Xi'an CN
Min; Tai - Wilsele BE
Min; Tai - Milpitas CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Three-dimensional magnetic device and magnetic memory Grant 11,114,145 - Min , et al. September 7, 2	2021-09-07
Three-dimensional Magnetic Device And Magnetic Memory App 20210005235 - Min; Tai ; et al.	2021-01-07
Magnetic structure based on synthetic antiferromagnetic free layer and derivative SOT-MRAM Grant 10,734,054 - Min , et al.	2020-08-04
Magnetic tunnel junction device and magnetic random access memory Grant 10,580,967 - Min , et al.	2020-03-03
Magnetic structure based on synthetic antiferromagnetic free layer and derivative SOT-MRAM App 20200013444 - Min; Tai ; et al.	2020-01-09
Magnetic tunnel junction device and magnetic random access memory App 20190027680 - Min; Tai ; et al.	2019-01-24
Novel magnetic tunnel junction device and magnetic random access memory App 20190019943 - Min; Tai ; et al.	2019-01-17
Spin torque majority gate device Grant 9,947,860 - Min April 17, 2	2018-04-17
Three-dimensional magnetic memory element Grant 9,601,544 - Min March 21, 2	2017-03-21
Spin Torque Majority Gate Device App 20160172581 - Min; Tai	2016-06-16
Method of forming a writer with an AFM write gap Grant 9,336,799 - Min , et al. May 10, 2	2016-05-10
Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application Grant 9,331,271 - Horng , et al. May 3, 2	2016-05-03
Magnetic memory element Grant 9,281,468 - Min , et al. March 8, 2	2016-03-08
Method For Patterning A Magnetic Tunnel Junction Stack App 20150021726 - Min; Tai ; et al.	2015-01-22
Three-dimensional Magnetic Memory Element App 20150021675 - MIN; Tai	2015-01-22
Magnetic Memory Element App 20150008550 - Min; Tai ; et al.	2015-01-08
High data rate writer design Grant 8,929,029 - Min , et al. January 6, 2	2015-01-06
High Data Rate Writer Design App 20140307348 - Min; Tai ; et al.	2014-10-16
Shield designs with internal magnetization control for ATE improvement Grant 8,755,149 - Song , et al. June 17, 2	2014-06-17
Structure and Method to Fabricate High Performance MTJ Devices for Spin-Transfer Torque (STT)-RAM Application App 20140099735 - Horng; Cheng T. ; et al.	2014-04-10
Shield Designs with Internal Magnetization Control for ATE Improvement App 20140078619 - Song; Suping ; et al.	2014-03-20
Method of Forming a Writer with an AFM Write Gap App 20140037861 - Min; Tai ; et al.	2014-02-06
Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application Grant 8,609,262 - Horng , et al. December 17, 2	2013-12-17
Writer with an AFM write gap Grant 8,564,903 - Min , et al. October 22, 2	2013-10-22
Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy Grant 8,525,280 - Min , et al. September 3, 2	2013-09-03
MRAM with means of controlling magnetic anisotropy Grant 8,497,559 - Min , et al. July 30, 2	2013-07-30
Superior performance head design with minimized ATE and WATE Grant 8,498,079 - Song , et al. July 30, 2	2013-07-30
Writer design with enhanced writability Grant 8,456,778 - Min , et al. June 4, 2	2013-06-04
High data rate magnetic writer design Grant 8,446,689 - Min , et al. May 21, 2	2013-05-21
Pulse field assisted spin momentum transfer MRAM design Grant 8,422,287 - Min , et al. April 16, 2	2013-04-16
Modified shield design to eliminate the far-field WATE problem Grant 8,385,020 - Min February 26, 2	2013-02-26
High Data Rate Magnetic Writer Design App 20130027809 - Min; Tai ; et al.	2013-01-31
Writer with an AFM write gap App 20120295133 - Min; Tai ; et al.	2012-11-22
Writer design with enhanced writability App 20120295132 - Min; Tai ; et al.	2012-11-22
Pmr Write Head With Assisted Magnetic Layer App 20120257305 - Tang; Yuhui ; et al.	2012-10-11
PMR write head with assisted magnetic layer Grant 8,284,516 - Tang , et al. October 9, 2	2012-10-09
PMR write head with narrow gap for minimal internal flux loss Grant 8,238,059 - Tang , et al. August 7, 2	2012-08-07
Modified shield design to eliminate the far-field WATE problem App 20120127611 - Min; Tai	2012-05-24
MRAM with storage layer and super-paramagnetic sensing layer Grant 8,178,363 - Wang , et al. May 15, 2	2012-05-15
Fabrication methods of partial cladded write line to enhance write margin for magnetic random access memory Grant 8,169,816 - Min , et al. May 1, 2	2012-05-01
Pulse field assisted spin momentum transfer MRAM design App 20120063214 - Min; Tai ; et al.	2012-03-15
MRAM with storage layer and super-paramagnetic sensing layer App 20120058574 - Wang; Po-Kang ; et al.	2012-03-08
Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy App 20110284977 - Min; Tai ; et al.	2011-11-24
MRAM with storage layer and super-paramagnetic sensing layer Grant 8,062,909 - Wang , et al. November 22, 2	2011-11-22
MRAM with storage layer and super-paramagnetic sensing layer Grant 8,039,885 - Wang , et al. October 18, 2	2011-10-18
CPP magnetic recording head with self-stabilizing vortex configuration Grant 8,018,690 - Min , et al. September 13, 2	2011-09-13
Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy Grant 7,994,596 - Min , et al. August 9, 2	2011-08-09
MRAM with coupling valve switching Grant 7,994,597 - Min August 9, 2	2011-08-09
Spin momentum transfer MRAM design Grant 7,929,370 - Min April 19, 2	2011-04-19
Design and fabrication methods of partial cladded write line to enhance write margin for magnetic random access memory App 20110062536 - Min; Tai ; et al.	2011-03-17
MRAM with cross-tie magnetization configuration Grant 7,885,094 - Min , et al. February 8, 2	2011-02-08
Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application App 20110014500 - Horng; Cheng T. ; et al.	2011-01-20
Spin torque transfer MRAM design with low switching current App 20100315869 - Min; Tai ; et al.	2010-12-16
MRAM with coupling valve switching App 20100232215 - Min; Tai	2010-09-16
MRAM with storage layer and super-paramagnetic sensing layer App 20100176429 - Wang; Po-Kang ; et al.	2010-07-15
MRAM with storage layer and super-paramagnetic sensing layer App 20100178715 - Wang; Po-Kang ; et al.	2010-07-15
Novel spin momentum transfer MRAM design App 20100128518 - Min; Tai	2010-05-27
MRAM with enhanced programming margin Grant 7,715,224 - Min , et al. May 11, 2	2010-05-11
MRAM with super-paramagnetic sensing layer Grant 7,696,548 - Wang , et al. April 13, 2	2010-04-13
MRAM with cross-tie magnetization configuration App 20090268512 - Min; Tai ; et al.	2009-10-29
Side reading reduced GMR for high track density Grant 7,599,158 - Wang , et al. October 6, 2	2009-10-06
Multi-state thermally assisted storage Grant 7,588,945 - Min , et al. September 15, 2	2009-09-15
MRAM with means of controlling magnetic anisotropy App 20090096043 - Min; Tai ; et al.	2009-04-16
Thermally assisted integrated MRAM design and process for its manufacture Grant 7,486,545 - Min , et al. February 3, 2	2009-02-03
MRAM with split read-write cell structures Grant 7,466,583 - Min , et al. December 16, 2	2008-12-16
Magnetic random access memory array with free layer locking mechanism and method of its use Grant 7,443,707 - Guo , et al. October 28, 2	2008-10-28
MRAM with enhanced programming margin App 20080253178 - Min; Tai ; et al.	2008-10-16
Side reading reduced GMR for high track density Grant 7,408,748 - Wang , et al. August 5, 2	2008-08-05
CPP magnetic recording head with self-stabilizing vortex configuration App 20080180865 - Min; Tai ; et al.	2008-07-31
Multi-state thermally assisted storage App 20080160641 - Min; Tai ; et al.	2008-07-03
Magnetic random access memory array with thin conduction electrical read and write lines Grant 7,394,123 - Min , et al. July 1, 2	2008-07-01
Magnetic random access memory array with thin conduction electrical read and write lines Grant 7,394,122 - Min , et al. July 1, 2	2008-07-01
Amorphous layers in a magnetic tunnel junction device Grant 7,369,376 - Guo , et al. May 6, 2	2008-05-06
Method of forming a CPP magnetic recording head with a self-stabilizing vortex configuration Grant 7,356,909 - Min , et al. April 15, 2	2008-04-15
Multi-state thermally assisted storage Grant 7,345,911 - Min , et al. March 18, 2	2008-03-18
Magnetic random access memory array with coupled soft adjacent magnetic layer Grant 7,335,961 - Guo , et al. February 26, 2	2008-02-26
Magnetic random access memory designs with controlled magnetic switching mechanism Grant 7,291,892 - Min , et al. November 6, 2	2007-11-06
Multi-state thermally assisted storage App 20070189064 - Min; Tai ; et al.	2007-08-16
Magnetic random access memory array with free layer locking mechanism and method of its use App 20070184561 - Guo; Yimin ; et al.	2007-08-09
Side reading reduced GMR for high track density App 20070171572 - Wang; Po Kang ; et al.	2007-07-26
Side reading reduced GMR for high track density App 20070171571 - Wang; Po Kang ; et al.	2007-07-26
MRAM with split read-write cell structures App 20070164380 - Min; Tai ; et al.	2007-07-19
Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling Grant 7,242,046 - Min , et al. July 10, 2	2007-07-10
Thermally assisted integrated MRAM design and process for its manufacture App 20070097734 - Min; Tai ; et al.	2007-05-03
Magnetic random access memory array with free layer locking mechanism Grant 7,211,874 - Guo , et al. May 1, 2	2007-05-01
Side reading reduced GMR for high track density Grant 7,203,039 - Wang , et al. April 10, 2	2007-04-10
Structure and fabrication of an MRAM cell App 20070054450 - Hong; Liubo ; et al.	2007-03-08
MRAM with super-paramagnetic sensing layer App 20070034919 - Wang; Po-Kang ; et al.	2007-02-15
Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy App 20070008661 - Min; Tai ; et al.	2007-01-11
Magnetic random access memory array with proximate read and write lines cladded with magnetic material Grant 7,132,707 - Min , et al. November 7, 2	2006-11-07
Method and system for performing more consistent switching of magnetic elements in a magnetic memory Grant 7,123,506 - Shi , et al. October 17, 2	2006-10-17
Lead overlay bottom spin valve with improved side reading Grant 7,116,531 - Dovek , et al. October 3, 2	2006-10-03
Amorphous layers in a magnetic tunnel junction device App 20060209590 - Guo; Yimin ; et al.	2006-09-21
Magnetic random access memory array with thin conduction electrical read and write lines App 20060211155 - Min; Tai ; et al.	2006-09-21
Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy Grant 7,105,372 - Min , et al. September 12, 2	2006-09-12
Magnetic random access memory designs with controlled magnetic switching mechanism App 20060157765 - Min; Tai ; et al.	2006-07-20
Vortex magnetic random access memory Grant 7,072,208 - Min , et al. July 4, 2	2006-07-04
Magnetic random access memory array with thin conduction electrical read and write lines Grant 7,067,330 - Min , et al. June 27, 2	2006-06-27
Magnetic random access memory designs with controlled magnetic switching mechanism Grant 7,029,941 - Min , et al. April 18, 2	2006-04-18
Method and system for providing a magnetic element including passivation structures Grant 7,009,266 - Shi , et al. March 7, 2	2006-03-07
Magnetic random access memory array with proximate read and write lines cladded with magnetic material App 20060028862 - Min; Tai ; et al.	2006-02-09
Vortex magnetic random access memory App 20060023492 - Min; Tai ; et al.	2006-02-02
Magnetic random access memory array with thin conduction electrical read and write lines App 20060014306 - Min; Tai ; et al.	2006-01-19
Magnetic random access memory array with thin conduction electrical read and write lines App 20060014346 - Min; Tai ; et al.	2006-01-19
Magnetic random access memory array with coupled soft adjacent magnetic layer Grant 6,979,586 - Guo , et al. December 27, 2	2005-12-27
Magnetic random access memory array with coupled soft adjacent magnetic layer App 20050280960 - Guo, Yimin ; et al.	2005-12-22
Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling App 20050237793 - Min, Tai ; et al.	2005-10-27
Magnetic random access memory array with free layer locking mechanism App 20050219895 - Guo, Yimin ; et al.	2005-10-06
Continuous free layer spin valve sensor with patterned exchange underlayer stabilization Grant 6,943,995 - Min , et al. September 13, 2	2005-09-13
Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling Grant 6,943,040 - Min , et al. September 13, 2	2005-09-13
Method and system for performing more consistent switching of magnetic elements in a magnetic memory App 20050180201 - Shi, Xizeng ; et al.	2005-08-18
Magnetic random access memory designs with patterned and stabilized magnetic shields Grant 6,929,957 - Min , et al. August 16, 2	2005-08-16
Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy App 20050157544 - Min, Tai ; et al.	2005-07-21
Magnetic random access memory designs with patterned and stabilized magnetic shields App 20050059170 - Min, Tai ; et al.	2005-03-17
Magnetic random access memory designs with controlled magnetic switching mechanism App 20050047241 - Min, Tai ; et al.	2005-03-03
Method and system for providing a magnetic element including passivation structures App 20050048674 - Shi, Xizeng ; et al.	2005-03-03
Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling App 20050045931 - Min, Tai ; et al.	2005-03-03
Lead overlay bottom spin valve with improved side reading App 20050007706 - Dovek, Moris M. ; et al.	2005-01-13
Magnetic random access memory array with coupled soft adjacent magnetic layer App 20040233760 - Guo, Yimin ; et al.	2004-11-25
Side reading reduced GMR for high track density App 20040223269 - Wang, Po Kang ; et al.	2004-11-11
Method of manufacturing a lead overlay bottom spin valve with improved side reading Grant 6,779,248 - Dovek , et al. August 24, 2	2004-08-24
Process of manufacturing a side reading reduced GMR for high track density Grant 6,760,966 - Wang , et al. July 13, 2	2004-07-13
Continuous free layer spin valve sensor with patterned exchange underlayer stabilization App 20040105191 - Min, Tai ; et al.	2004-06-03
Side reading reduced GMR for high track density App 20030202295 - Wang, Po Kang ; et al.	2003-10-30
Lead overlay bottom spin valve with improved side reading App 20030169541 - Dovek, Moris M. ; et al.	2003-09-11
Method of forming a continuous free layer spin valve sensor with patterned exchange underlayer stabilization Grant 6,606,782 - Min , et al. August 19, 2	2003-08-19
Continuous free layer spin valve sensor with patterned exchange underlayer stabilization App 20020126429 - Min, Tai ; et al.	2002-09-12
Continuous free layer spin valve sensor with patterned exchange underlayer stabilization Grant 6,385,017 - Min , et al. May 7, 2	2002-05-07
Magnetic recording sensor with stabilizing shield Grant 6,358,635 - Min , et al. March 19, 2	2002-03-19
Spin valve device with improved thermal stability Grant 6,351,355 - Min , et al. February 26, 2	2002-02-26
Magnetic read sensor with SDT tri-layer and method for making same Grant 6,330,136 - Wang , et al. December 11, 2	2001-12-11
Spin valve sensor with antiferromagnetic and magnetostatically coupled pinning structure Grant 6,185,077 - Tong , et al. February 6, 2	2001-02-06
Apparatus for producing a uniform magnetic field over a large surface area of a wafer Grant 6,136,166 - Shen , et al. October 24, 2	2000-10-24
Method of forming a second antiferromagnetic exchange-coupling layer for magnetoresistive (MR) and giant MR (GMR) applications Grant 6,129,957 - Xiao , et al. October 10, 2	2000-10-10