U.S. patent application number 10/736991 was filed with the patent office on 2004-09-23 for reduced maintenance chemical oxide removal (cor) processing system.
This patent application is currently assigned to Tokyo Electron Limited. Invention is credited to Hamelin, Thomas, Laflamme, Arthur H. JR., Wallace, Jay.
Application Number | 20040182315 10/736991 |
Document ID | / |
Family ID | 34710473 |
Filed Date | 2004-09-23 |
United States Patent
Application |
20040182315 |
Kind Code |
A1 |
Laflamme, Arthur H. JR. ; et
al. |
September 23, 2004 |
Reduced maintenance chemical oxide removal (COR) processing
system
Abstract
A chemical oxide removal (COR) processing system is presented,
wherein the COR processing system includes a first treatment
chamber and a second treatment chamber. The first treatment chamber
comprises a chemical treatment chamber that provides a temperature
controlled chamber having a protective barrier. The second
treatment chamber comprises a heat treatment chamber that provides
a temperature-controlled chamber having a protective barrier.
Inventors: |
Laflamme, Arthur H. JR.;
(Rowley, MA) ; Hamelin, Thomas; (Georgetown,
MA) ; Wallace, Jay; (Danvers, MA) |
Correspondence
Address: |
PILLSBURY WINTHROP, LLP
P.O. BOX 10500
MCLEAN
VA
22102
US
|
Assignee: |
Tokyo Electron Limited
Tokyo
JP
|
Family ID: |
34710473 |
Appl. No.: |
10/736991 |
Filed: |
December 17, 2003 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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60454597 |
Mar 17, 2003 |
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60454642 |
Mar 17, 2003 |
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60454641 |
Mar 17, 2003 |
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60454644 |
Mar 17, 2003 |
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Current U.S.
Class: |
118/715 |
Current CPC
Class: |
H01L 21/67109 20130101;
H01L 21/67207 20130101; C25D 11/02 20130101; H01L 21/67248
20130101; H01L 21/67069 20130101; H01L 21/67253 20130101; H01L
21/67748 20130101; H01L 21/6719 20130101; H01L 21/67103
20130101 |
Class at
Publication: |
118/715 |
International
Class: |
C23C 016/00 |
Claims
What is claimed is:
1. A reduced maintenance processing system for treating a substrate
comprising: a chemical treatment system for chemically altering
exposed surface layers on the substrate comprising a temperature
controlled chemical treatment chamber having a protective barrier
formed on at least a portion of an interior surface; a thermal
treatment system for thermally treating the chemically altered
surface layers on the substrate, the thermal treatment system
comprising a temperature controlled thermal treatment chamber
having a protective barrier formed on at least a portion of an
interior surface; and a thermal insulation assembly coupled to the
thermal treatment system and the chemical treatment system.
2. The processing system as claimed in claim 1, wherein the thermal
insulation assembly comprises a protective barrier on at least one
exposed surface.
3. The processing system as claimed in claim 1, wherein: the
chemical treatment system further comprises a temperature
controlled substrate holder mounted within the chemical treatment
chamber and having a protective barrier formed on at least a
portion of an exposed surface, a vacuum pumping system coupled to
the chemical treatment chamber, and a gas distribution plate
comprising a plurality of gas injection orifices and having a
protective barrier formed on at least a portion of an exposed
surface of the gas distribution plate and at least a portion of an
exposed surface of each orifice, wherein the gas distribution plate
is coupled to a temperature controlled gas distribution system for
introducing a process gas into the chemical treatment chamber; the
thermal treatment system further comprises a temperature controlled
substrate holder mounted within the thermal treatment chamber and
having a protective barrier formed on at least a portion of an
exposed surface, and a vacuum pumping system coupled to the thermal
treatment chamber; and the processing system further comprises a
control system coupled to the chemical treatment system and the
thermal treatment system, and configured to control at least one of
a chemical treatment chamber temperature, a chemical treatment gas
distribution system temperature, a chemical treatment substrate
holder temperature, a chemical treatment substrate temperature, a
chemical treatment processing pressure, a chemical treatment gas
flow rate, a thermal treatment chamber temperature, a thermal
treatment substrate holder temperature, a thermal treatment
substrate temperature, a thermal treatment processing pressure, and
a thermal treatment gas flow rate.
4. The processing system as claimed in claim 1, wherein the
protective barrier on the interior surface of the chemical
treatment chamber comprises an anodized metal impregnated with PTFE
and/or TFE.
5. The processing system as claimed in claim 4, wherein the
protective barrier on the interior surface of the chemical
treatment chamber comprises a hard anodized metal impregnated with
TFE and/or PTFE.
6. The processing system as claimed in claim 4, wherein the metal
comprises at least one of aluminum and an aluminum alloy.
7. The processing system as claimed in claim 1, wherein the
protective barrier on the interior surface of the chemical
treatment chamber comprises at least one of Al.sub.2O.sub.3,
Y.sub.2O.sub.3, Sc.sub.2O.sub.3, Sc.sub.2F.sub.3, YF.sub.3,
La.sub.2O.sub.3, CeO.sub.2, Eu.sub.2O.sub.3, and DyO.sub.3.
8. The processing system as claimed in claim 1, wherein the
chemical treatment system further comprises a temperature
controlled substrate holder having a protective barrier formed on
at least a portion thereof, the protective barrier on the
temperature controlled substrate holder mounted within the chemical
treatment chamber comprising an anodized metal impregnated with
PTFE and/or TFE.
9. The processing system as claimed in claim 1, wherein the
chemical treatment system further comprises a temperature
controlled substrate holder having a protective barrier formed on
at least a portion thereof, the protective barrier on the
temperature controlled substrate holder mounted within the chemical
treatment chamber comprising at least one of Al.sub.2O.sub.3,
Y.sub.2O.sub.3, Sc.sub.2O.sub.3, Sc.sub.2F.sub.3, YF.sub.3,
La.sub.2O.sub.3, CeO.sub.2, Eu.sub.2O.sub.3, and DyO.sub.3.
10. The processing system as claimed in claim 1, wherein the
chemical treatment system further comprises a gas distribution
plate comprising a plurality of gas injection orifices and having a
protective barrier formed on at least a portion of an exposed
surface of the gas distribution plate and at least a portion of an
exposed surface of each orifice, wherein the gas distribution plate
is coupled to a temperature controlled gas distribution system for
introducing a process gas into the chemical treatment chamber, the
protective barrier on the gas distribution plate and the protective
barrier on each orifice comprises an anodized metal impregnated
with PTFE and/or TFE.
11. The processing system as claimed in claim 10, wherein the
protective barrier on the exposed surface of the gas distribution
plate and the protective barrier on the exposed surface of each
orifice comprises a hard anodized metal impregnated with TFE and/or
PTFE.
12. The processing system as claimed in claim 10, wherein the metal
comprises at least one of aluminum and an aluminum alloy
13. The processing system as claimed in claim 1, wherein the
chemical treatment system further comprises a gas distribution
plate comprising a plurality of gas injection orifices and having a
protective barrier formed on at least a portion of an exposed
surface of the gas distribution plate and at least a portion of an
exposed surface of each orifice, wherein the gas distribution plate
is coupled to a temperature controlled gas distribution system for
introducing a process gas into the chemical treatment chamber, the
protective barrier on the exposed surface of the gas distribution
plate and the protective barrier on the exposed surface of each
orifice comprises at least one of Al.sub.2O.sub.3, Y.sub.2O.sub.3,
Sc.sub.2O.sub.3, Sc.sub.2F.sub.3, YF.sub.3, La.sub.2O.sub.3,
CeO.sub.2, Eu.sub.2O.sub.3, and DyO.sub.3.
14. The processing system as claimed in claim 1, wherein the
protective barrier on the interior surface of temperature
controlled thermal treatment chamber comprises an anodized metal
impregnated with PTFE and/or TFE.
15. The processing system as claimed in claim 14, wherein the
protective barrier on the interior surface of the temperature
controlled thermal treatment chamber comprises a hard anodized
metal impregnated with TFE and or PTFE.
16. The processing system as claimed in claim 14, wherein the metal
comprises at least one of aluminum and an aluminum alloy.
17. The processing system as claimed in claim 1, wherein the
protective barrier on the interior surface of temperature
controlled thermal treatment chamber comprises at least one of
Al.sub.2O.sub.3, Y.sub.2O.sub.3, Sc.sub.2O.sub.3, Sc.sub.2F.sub.3,
YF.sub.3, La.sub.2O.sub.3, CeO.sub.2, Eu.sub.2O.sub.3, and
DyO.sub.3.
18. The processing system as claimed in claim 1, wherein the
thermal treatment system further comprises a temperature controlled
substrate holder mounted within the thermal treatment chamber and
having a protective barrier formed on at least a portion of an
exposed surface, the protective barrier on the exposed surface of
the temperature controlled substrate holder mounted within the
temperature controlled thermal treatment chamber comprises an
anodized metal impregnated with PTFE and/or TFE.
19. The processing system as claimed in claim 1, wherein the
thermal treatment system further comprises a temperature controlled
substrate holder mounted within the thermal treatment chamber and
having a protective barrier formed on at least a portion of an
exposed surface, the protective barrier on the exposed surface of
the temperature controlled substrate holder mounted within the
temperature controlled thermal treatment chamber comprises at least
one of Al.sub.2O.sub.3, Y.sub.2O.sub.3, Sc.sub.2O.sub.3,
Sc.sub.2F.sub.3, YF.sub.3, La.sub.2O.sub.3, CeO.sub.2,
Eu.sub.2O.sub.3, and DyO.sub.3.
20. The processing system as claimed in claim 1, wherein the
thermal insulation assembly comprises a gate valve assembly,
wherein a protective barrier is formed on at least a portion of an
exposed surface of the gate valve assembly.
21. The processing system as claimed in claim 20, wherein the
protective barrier on the exposed surface of the gate valve
assembly comprises an anodized metal impregnated with PTFE and/or
TFE.
22. The processing system as claimed in claim 20, wherein the
protective barrier on the exposed surface of the gate valve
assembly comprises at least one of Al.sub.2O.sub.3, Y.sub.2O.sub.3,
Sc.sub.2O.sub.3, Sc.sub.2F.sub.3, YF.sub.3, La.sub.2O.sub.3,
CeO.sub.2, Eu.sub.2O.sub.3, and DyO.sub.3.
23. The processing system as claimed in claim 10, wherein the
process gas comprises a first gas and a second gas.
24. The processing system as claimed in claim 23, wherein the first
gas comprises at least one of NH.sub.3, HF, H.sub.2, O.sub.2, CO,
CO.sub.2, Ar, He, and N.sub.2.
25. The processing system as claimed in claim 23, wherein the
second gas comprises at least one of NH.sub.3, HF, H.sub.2,
O.sub.2, CO, CO.sub.2, Ar, He, and N.sub.2.
26. The processing system as claimed in claim 23, wherein the
plurality of orifices comprises a first array of orifices for
coupling the first gas to the process space and a second array of
orifices for coupling the second gas to the process space.
27. The processing system as claimed in claim 1, wherein the
thermal treatment system further comprises a substrate lifter
assembly coupled to the thermal treatment chamber for vertically
translating the substrate between a transfer plane and the
substrate holder.
28. The processing system as claimed in claim 27, wherein the
substrate lifter assembly comprises a blade having three or more
tabs for receiving the substrate and having a protective barrier
formed on at least a portion of an exposed surface, and a drive
system for vertically translating the substrate between the
substrate holder and a transfer plane.
29. The processing system as claimed in claim 28, wherein the
protective barrier on the at least one exposed surface of the blade
comprises an anodized metal impregnated with PTFE and/or TFE.
30. The processing system as claimed in claim 28, wherein the
protective barrier on the at least one exposed surface of the blade
comprises at least one of Al.sub.2O.sub.3, Y.sub.2O.sub.3,
Sc.sub.2O.sub.3, Sc.sub.2F.sub.3, YF.sub.3, La.sub.2O.sub.3,
CeO.sub.2, Eu.sub.2O.sub.3, and DyO.sub.3.
31. A chemical treatment system for chemically altering exposed
surface layers on the substrate comprising: a temperature
controlled chemical treatment chamber having a protective barrier
formed on at least a portion of an interior surface; a temperature
controlled substrate holder mounted within the chemical treatment
chamber; a vacuum pumping system coupled to the chemical treatment
chamber; and a gas distribution plate comprising a plurality of gas
injection orifices, the gas distribution plate being coupled to a
temperature controlled gas distribution system for introducing a
process gas into the chemical treatment chamber.
32. The chemical treatment system as claimed in claim 31, wherein
the protective barrier on the interior surface of the chemical
treatment chamber comprises an anodized metal impregnated with PTFE
and/or TFE.
33. The chemical treatment system as claimed in claim 32, wherein
the protective barrier on the interior surface of the chemical
treatment chamber comprises a hard anodized metal impregnated with
TFE and/or PTFE.
34. The processing system as claimed in claim 32, wherein the metal
comprises at least one of aluminum and an aluminum alloy.
35. The processing system as claimed in claim 31, wherein the
protective barrier on the interior surface of the chemical
treatment chamber comprises at least one of Al.sub.2O.sub.3,
Y.sub.2O.sub.3, Sc.sub.2O.sub.3, Sc.sub.2F.sub.3, YF.sub.3,
La.sub.2O.sub.3, CeO.sub.2, Eu.sub.2O.sub.3, and DyO.sub.3.
36. The chemical treatment system of claim 31, wherein the
substrate holder has a protective barrier formed on at least a
portion of an exposed surface.
37. The chemical treatment system of claim 31, wherein a protective
barrier is formed on at least a portion of an exposed surface of
the gas distribution plate and on at least a portion of an exposed
surface of each orifice.
38. A thermal treatment system for thermally treating the
chemically altered surface layers on the substrate, the thermal
treatment system comprising: a temperature controlled thermal
treatment chamber having a protective barrier formed on at least a
portion of an interior surface; a temperature controlled substrate
holder mounted within the thermal treatment chamber; a vacuum
pumping system coupled to the thermal treatment chamber; and a
temperature controlled upper assembly coupled to the thermal
treatment chamber.
39. The thermal treatment system as claimed in claim 38, wherein
the protective barrier on the interior surface of the thermal
treatment chamber comprises an anodized metal impregnated with PTFE
and/or TFE.
40. The thermal treatment system as claimed in claim 39, wherein
the protective barrier on the interior surface of the thermal
treatment chamber comprises a hard anodized metal impregnated with
TFE and/or PTFE.
41. The thermal treatment system as claimed in claim 39, wherein
the metal comprises at least one of aluminum and an aluminum
alloy.
42. The thermal treatment system as claimed in claim 38, wherein
the protective barrier on the interior surface of the thermal
treatment chamber comprises at least one of Al.sub.2O.sub.3,
Y.sub.2O.sub.3, Sc.sub.2O.sub.3, Sc.sub.2F.sub.3, YF.sub.3,
La.sub.2O.sub.3, CeO.sub.2, Eu.sub.2O.sub.3, and DyO.sub.3.
43. The thermal treatment system as claimed in claim 38, wherein
the substrate holder has a protective barrier formed on at least
one exposed surface.
44. A method for treating a processing chamber, comprising:
anodizing at least a portion of an interior surface of the
processing chamber; and impregnating the anodized surface with PTFE
and/or TFE, thereby creating a protective barrier.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is related to pending U.S. Patent
Application Serial No. 60/454,597, entitled "Processing System and
Method For Treating a Substrate", Attorney docket no.
071469/0301073, filed on Mar. 17, 2003; pending U.S. Patent
Application Serial No. 60/454,642, entitled "Processing System and
Method For Chemically Treating a Substrate", Attorney docket no.
071469/0301087, filed on Mar. 17, 2003; pending U.S. Patent
Application Serial No. 60/454,641, entitled "Processing System and
Method For Thermally Treating a Substrate", Attorney docket no.
071469/0301088, filed on Mar. 17, 2003; and pending U.S. Patent
Application Serial No. 60/454,644, entitled "Method and Apparatus
For Thermally Insulating Adjacent Temperature Controlled Chambers",
Attorney docket no. 071469/0292055, filed on Mar. 17, 2003. The
entire contents of all of those applications are herein
incorporated by reference in their entirety.
FIELD OF THE INVENTION
[0002] The present invention relates to a system and method for
processing a substrate, and more particularly to a system and
method for protecting chemical and thermal treatment chambers.
BACKGROUND OF THE INVENTION
[0003] During semiconductor processing, a dry plasma etch process
can be utilized to remove or etch material along fine lines, within
vias, or contacts patterned on a silicon substrate. The plasma etch
process generally involves positioning a semiconductor substrate
with an overlying patterned, protective layer, for example a
photoresist layer, in a processing chamber. Once the substrate is
positioned within the chamber, an ionizable, dissociative gas
mixture is introduced within the chamber at a pre-specified flow
rate, while a vacuum pump is throttled to achieve an ambient
process pressure. Thereafter, a plasma is formed when a fraction of
the gas species present are ionized by electrons heated via the
transfer of radio frequency (RF) power either inductively or
capacitively, or microwave power using, for example, electron
cyclotron resonance (ECR). Moreover, the heated electrons serve to
dissociate some species of the ambient gas species and create
reactant specie(s) suitable for the exposed surface etch chemistry.
Once the plasma is formed, selected surfaces of the substrate are
etched by the plasma. The process is adjusted to achieve
appropriate conditions, including an appropriate concentration of
desirable reactant and ion populations to etch various features
(e.g., trenches, vias, contacts, gates, etc.) in the selected
regions of the substrate. Such substrate materials where etching is
required include silicon dioxide (SiO.sub.2), low-k dielectric
materials, poly-silicon, and silicon nitride.
[0004] During material processing, etching such features generally
comprises the transfer of a pattern formed within a mask layer to
the underlying film within which the respective features are
formed. The mask can, for example, comprise a light-sensitive
material such as (negative or positive) photo-resist, multiple
layers including such layers as photo-resist and an anti-reflective
coating (ARC), or a hard mask formed from the transfer of a pattern
in a first layer, such as photo-resist, to the underlying hard mask
layer.
SUMMARY OF THE INVENTION
[0005] The present invention relates to a system and method for
protecting a chemical treatment chamber and/or heat treatment
chamber.
[0006] In one aspect of the invention, a processing system is
described for performing material removal on a substrate comprising
a first treatment system and a second treatment system, wherein the
first and second treatment systems are coupled to one another. The
first treatment system comprises a chemical treatment system, and a
protective barrier formed on at least one component of the chemical
treatment system. The second treatment system comprises a thermal
treatment system and a protective barrier formed on at least one
component of the thermal treatment system.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] In the drawings:
[0008] FIG. 1 illustrates a schematic representation of a
processing system according to an embodiment of the present
invention;
[0009] FIG. 2 shows a schematic cross-sectional view of a
processing system according to an embodiment of the present
invention;
[0010] FIG. 3 shows a schematic cross-sectional view of a chemical
treatment system according to an embodiment of the present
invention;
[0011] FIG. 4 shows a schematic perspective view of a chemical
treatment system according to another embodiment of the present
invention;
[0012] FIG. 5 shows a schematic cross-sectional view of a thermal
treatment system according to an embodiment of the present
invention;
[0013] FIG. 6 shows a schematic perspective view of a thermal
treatment system according to another embodiment of the present
invention;
[0014] FIG. 7 illustrates a schematic cross-sectional view of a
substrate holder according to an embodiment of the present
invention;
[0015] FIG. 8A illustrates a schematic cross-sectional view of a
gas distribution system according to another embodiment of the
present invention;
[0016] FIG. 8B presents an expanded view of the gas distribution
system shown in FIG. 8A according to an embodiment of the present
invention; and
[0017] FIG. 9 shows a substrate lifter assembly according to an
embodiment of the present invention.
DETAILED DESCRIPTION OF SEVERAL EMBODIMENTS
[0018] In material processing methodologies, pattern etching
comprises the application of a thin layer of light-sensitive
material, such as photoresist, to an upper surface of a substrate,
that is subsequently patterned in order to provide a mask for
transferring this pattern to the underlying thin film during
etching. The patterning of the light-sensitive material generally
involves exposure of the light-sensitive material by a radiation
source through a reticle (and associated optics) using, for
example, a micro-lithography system, followed by the removal of the
irradiated regions of the light-sensitive material (as in the case
of positive photoresist), or non-irradiated regions (as in the case
of negative resist) using a developing solvent.
[0019] Additionally, multi-layer and hard masks can be implemented
for etching features. For example, when etching features using a
hard mask, the mask pattern in the light-sensitive layer is
transferred to the hard mask layer using a separate etch step
preceding the main etch step. The hard mask can, for example, be
selected from several materials for silicon processing including
silicon dioxide (SiO.sub.2), silicon nitride (Si.sub.3N.sub.4), and
carbon, for example.
[0020] In order to reduce the feature size formed, the hard mask
can be trimmed laterally using, for example, a two-step process
involving a chemical treatment of the exposed surfaces of the hard
mask layer in order to alter the surface chemistry of the hard mask
layer, and a thermal treatment of the exposed surfaces of the hard
mask layer in order to desorb the altered surface chemistry.
[0021] FIG. 1 illustrates a schematic representation of a
processing system according to an embodiment of the present
invention. In the illustrated embodiment shown in FIG. 1, a
processing system 1 for processing a substrate using, for example,
mask layer trimming is shown. Processing system 1 can comprise a
first treatment system 10, and a second treatment system 20 coupled
to the first treatment system 10. For example, the first treatment
system 10 can comprise a thermal treatment system, and the second
treatment system 20 can comprise a chemical treatment system. Also,
as illustrated in FIG. 1, a transfer system 30 can be coupled to
the first treatment system 10 in order to transfer substrates into
and out of the first treatment system 10 and the second treatment
system 20, and exchange substrates with a multi-element
manufacturing system 40.
[0022] The first and second treatment systems 10, 20, and the
transfer system 30 can, for example, comprise a processing element
coupled to the multi-element manufacturing system 40. The
multi-element manufacturing system 40 can permit the transfer of
substrates to and from processing elements including such devices
as etch systems, deposition systems, coating systems, patterning
systems, metrology systems, etc. In order to isolate the processes
occurring in the first and second systems, an isolation assembly 50
can be utilized to couple each system. For instance, the isolation
assembly 50 can comprise at least one of a thermal insulation
assembly to provide thermal isolation, and a gate valve assembly to
provide vacuum isolation. In alternate embodiments, treatment
systems 10 and 20, and transfer system 30 can be placed in any
sequence.
[0023] In addition, a controller 60 can be coupled to the first
treatment system 10, the second treatment system 20, and the
transfer system 30. For example, controller 60 can be used to
control the first treatment system 10, the second treatment system
20, and the transfer system 30. Also, controller 60 can be coupled
to a control element (not shown) in the multi-element manufacturing
system 40.
[0024] Alternately, the first treatment system 10, the second
treatment system 20, and the transfer system 30 can be configured
differently. For example, a stacked arrangement or a side-by-side
arrangement can be used.
[0025] In general, at least one of the first treatment system 10
and the second treatment system 20 of the processing system 1
depicted in FIG. 1 comprises at least two transfer openings to
permit the passage of the substrate therethrough. For example, as
depicted in FIG. 1, the first treatment system 10 comprises two
transfer openings, the first transfer opening permits the passage
of the substrate between the first treatment system 10 and the
transfer system 30 and the second transfer opening permits the
passage of the substrate between the first treatment system 10 and
the second treatment system 20. Alternately, each treatment system
can comprise at least one transfer opening to permit the passage of
the substrate therethrough.
[0026] FIG. 2 shows a schematic cross-sectional view of a
processing system according to an embodiment of the present
invention. In the illustrated embodiment, a processing system 200
for performing chemical treatment and thermal treatment of a
substrate is shown. Processing system 200 can comprise a thermal
treatment system 210, and a chemical treatment system 220 coupled
to the thermal treatment system 210. The thermal treatment system
210 can comprise a thermal treatment chamber 211, which can be
temperature-controlled. The chemical treatment system 220 can
comprise a chemical treatment chamber 221, which can be
temperature-controlled. The thermal treatment chamber 211 and the
chemical treatment chamber 221 can be thermally insulated from one
another using a thermal insulation assembly 230, and vacuum
isolated from one another using a gate valve assembly 296, to be
described in greater detail below.
[0027] FIG. 3 shows a schematic cross-sectional view of a chemical
treatment system according to an embodiment of the present
invention. As illustrated in FIGS. 2 and 3, the chemical treatment
system 220 can further comprise a temperature controlled substrate
holder 240 configured to be substantially thermally isolated from
the chemical treatment chamber 221 and configured to support a
substrate 242 and a centering ring 243. The centering ring 243 can
be made of polytetrafluoroethylene (PTFE) and/or
tetrafluoroethylene (TFE). Also, substrate holder 240 can comprise
a protective barrier 241 formed on one or more exposed surfaces of
the substrate holder 240. In one embodiment, the protective barrier
241 can be created by anodizing a metal, and impregnating the
anodized surface with PTFE and/or TFE. For example, a protective
barrier can be formed by hard anodizing aluminum or hard anodizing
an aluminum alloy and impregnating the hard-anodized surface with
TFE and/or PTFE. In an alternate embodiment, protective barrier 241
is not required.
[0028] In an alternate embodiment of the present invention, the
protective barrier 241 can comprise at least one of
Al.sub.2O.sub.3, Yttria (Y.sub.2O.sub.3), Sc.sub.2O.sub.3,
Sc.sub.2F.sub.3, YF.sub.3, La.sub.2O.sub.3, CeO.sub.2,
Eu.sub.2O.sub.3, and DyO.sub.3. In additional embodiments of the
present invention, the protective barrier 222 can comprise at least
one of a column-III element (column III of periodic table) and a
Lanthanon element. In another embodiment of the present invention,
the column-III element can comprise at least one of Yttrium,
Scandium, and Lanthanum. In another embodiment of the present
invention, the Lanthanon element can comprise at least one of
Cerium, Dysprosium, and Europium.
[0029] In an embodiment of the present invention, the protective
barrier 241 can have a minimum thickness, wherein the minimum
thickness can be specified as constant across at least one of the
interior surfaces. In another embodiment, the minimum thickness can
be variable across the interior surfaces. Alternately, the minimum
thickness can be constant over a first portion of a surface and
variable over a second portion of the surface. For example, a
variable thickness can occur on a curved surface, on a corner, or
in a hole. For example, the minimum thickness can range from about
0.5 microns to about 500 microns. Alternatively; the minimum
thickness can range from about 100 microns to about 200 microns; or
the minimum thickness can be at least about 120 microns.
[0030] Furthermore, substrate holder 240 can comprise a protective
barrier 245 formed on the top surface of the substrate holder 240.
Protective barrier 245 can be made of a material selected from the
same range of materials and can have the same thickness as was
described for protective barrier 241. Alternatively protective
barrier 245 is not required.
[0031] Also, the chemical treatment system 220 can further comprise
a vacuum pumping system 250 coupled to the chemical treatment
chamber 221 to control the pressure in the chemical treatment
chamber 221, and an upper assembly 260 that can comprise a gas
distribution system for introducing a process gas into a process
space 262 within the chemical treatment chamber 221.
[0032] In addition, chemical treatment chamber 221 can comprise a
protective barrier 222 formed on one or more interior surfaces of
the chemical treatment chamber 221. Protective barrier 222 can be
made of a material selected from the same range of materials and
can have the same thickness as was described for protective barrier
241. Alternatively protective barrier 222 is not required.
[0033] Furthermore, a protective barrier 261 can be formed on one
or more interior surfaces of the upper assembly 260. Protective
barrier 261 can be made of a material selected from the same range
of materials and can have the same thickness as was described for
protective barrier 241. Alternatively protective barrier 261 is not
required.
[0034] The present invention may include a multi-step process that
can include, for example, preparing one or more surfaces to receive
the protective barrier, and then forming the protective barrier on
those surfaces.
[0035] As illustrated in FIGS. 2 and 5, the thermal treatment
system 210 can further comprise a temperature controlled substrate
holder 270 mounted within the thermal treatment chamber 211 and
configured to be substantially thermally insulated from the thermal
treatment chamber 211 and configured to support a substrate 242', a
vacuum pumping system 280 to evacuate the thermal treatment chamber
211, a substrate lifter assembly 290, and a drive system 530
coupled to the thermal treatment chamber 211. Lifter assembly 290
can vertically translate the substrate 242" between a holding plane
(solid lines) and the substrate holder 270 (dashed lines), or a
transfer plane located therebetween. The thermal treatment chamber
211 can further comprise an upper assembly 284.
[0036] In addition, thermal treatment chamber 211 can comprise a
protective barrier 212 formed on one or more interior surfaces of
the thermal treatment chamber 211. Protective barrier 212 can be
made of a material selected from the same range of materials and
can have the same thickness as was described for protective barrier
241. Alternatively protective barrier 212 is not required.
[0037] Additionally, the thermal treatment chamber 211, chemical
treatment chamber 221, and thermal insulation assembly 230 define a
common opening 294 through which a substrate can be transferred.
During processing, the common opening 294 can be sealed closed
using a gate valve assembly 296 in order to permit independent
processing in the two chambers 211, 221.
[0038] Furthermore, a transfer opening 298 can be formed in the
thermal treatment chamber 211 in order to permit substrate
exchanges with a transfer system as illustrated in FIG. 1. A second
thermal insulation assembly 231 can be implemented to thermally
insulate the thermal treatment chamber 221 from a transfer system
(not shown). Although the opening 298 is illustrated as part of the
thermal treatment chamber 211 (consistent with FIG. 1), the
transfer opening 298 can be formed in the chemical treatment
chamber 221 and not the thermal treatment chamber 211 (reverse
chamber positions as shown in FIG. 1).
[0039] Also, exposed surfaces of the gate valve assembly 296, the
common opening 294, and/or the transfer opening 298 can be provided
with a protective barrier (not shown). The protective barrier can
be made of a material selected from the same range of materials and
can have the same thickness as was described for protective barrier
241. Alternatively the protective barrier is not required.
[0040] As illustrated in FIGS. 2 and 3, the chemical treatment
system 220 can comprise a substrate holder 240, and a substrate
holder assembly 244 in order to provide several operational
functions for thermally controlling and processing substrate 242.
The substrate holder 240 and substrate holder assembly 244 can
comprise an electrostatic clamping system (or mechanical clamping
system) in order to electrically (or mechanically) clamp substrate
242 to the substrate holder 240. For example, the clamping system
can comprise a top surface comprising PTFE and/or TFE.
[0041] Furthermore, substrate holder 240 can, for example, further
include a cooling system having a re-circulating coolant flow that
receives heat from substrate holder 240 and transfers heat to a
heat exchanger system (not shown), or when heating, transfers heat
from the heat exchanger system. Moreover, a heat transfer gas can,
for example, be delivered to the backside of substrate 242 via a
backside gas system to improve the gas-gap thermal conductance
between substrate 242 and substrate holder 240. For instance, the
heat transfer gas supplied to the back-side of substrate 242 can
comprise an inert gas such as helium, argon, xenon, krypton, a
process gas such as CF.sub.4, C.sub.4F.sub.8, C.sub.5F.sub.8,
C.sub.4F.sub.6, etc., or other gas such as oxygen, nitrogen, or
hydrogen. Such a system can be utilized when temperature control of
the substrate is required at elevated or reduced temperatures. For
example, the backside gas system can comprise a multi-zone gas
distribution system such as a two-zone (center-edge) system,
wherein the backside gas gap pressure can be independently varied
between the center and the edge of substrate 242. In other
embodiments, heating/cooling elements, such as resistive heating
elements, or thermo-electric heaters/coolers can be included in the
substrate holder 240, as well as the chamber wall of the chemical
treatment chamber 221.
[0042] FIG. 7 illustrates an embodiment of a temperature controlled
substrate holder 300 which performs several of the above-identified
functions. Substrate holder 300 can comprise a chamber mating
component 310 coupled to a lower wall of the chemical treatment
chamber 221, an insulating component 312 coupled to the chamber
mating component 310, and a temperature control component 314
coupled to the insulating component 312. The chamber mating and
temperature control components 310, 314 can be fabricated from an
electrically and thermally conducting material such as aluminum,
stainless steel, nickel, etc. The insulating component 312 can be
fabricated from a thermally-resistant material having a relatively
lower thermal conductivity such as quartz, alumina, TFE, PTFE,
etc.
[0043] In addition, chamber mating and temperature control
components 310, 314 can comprise protective barriers 311, 315
formed on one or more exterior surfaces thereof. Also, insulating
component 312 can comprise a protective barrier 313 formed on one
or more exterior surfaces thereof. Protective barriers 311, 313 and
315 can each be made of a material selected from the same range of
materials and can have the same thickness as was described for
protective barrier 241. Alternatively one or more of protective
barriers 311, 313 and 315 is not required.
[0044] The temperature control component 314 can comprise
temperature control elements such as cooling channels, heating
channels, resistive heating elements, or thermo-electric elements.
For example, as illustrated in FIG. 7, the temperature control
component 314 can comprise a coolant channel 320 having a coolant
inlet 322 and a coolant outlet 324. The coolant channel 320 can,
for example, be a spiral passage within the temperature control
component 314 that permits a flow of coolant, such as water,
Fluorinert, Galden HT-135, etc., in order to provide
conductive-convective cooling of the temperature control component
314. Alternately, the temperature control component 314 can
comprise an array of thermo-electric elements capable of heating or
cooling a substrate depending upon the direction of electrical
current flow through the respective elements. An exemplary
thermoelectric element is one commercially available from Advanced
Thermoelectric, Model ST-127-1.4-8.5M (a 40 mm by 40 mm by 3.4 mm
thermoelectric device capable of a maximum heat transfer power of
72 W).
[0045] Additionally, the substrate holder 300 can further comprise
an electrostatic clamp (ESC) 328 comprising a ceramic layer 330, a
clamping electrode 332 embedded therein, and a high-voltage (HV) DC
voltage supply 334 coupled to the clamping electrode 332 using an
electrical connection 336. The ESC 328 can, for example, be
mono-polar, or bi-polar. The design and implementation of such a
clamp is well known to those skilled in the art of electrostatic
clamping systems. In one embodiment, a protective barrier 243 can
be formed on the upper surface of the substrate holder. Protective
barrier 243 can be made of a material selected from the same range
of materials and can have the same thickness as was described for
protective barrier 241. Alternatively protective barrier 243 is not
required.
[0046] Additionally, the substrate holder 300 can further comprise
a back-side gas supply system 340 for supplying a heat transfer
gas, such as an inert gas including helium, argon, xenon, krypton,
a process gas including CF.sub.4, C.sub.4F.sub.8, C.sub.5F.sub.8,
C.sub.4F.sub.6, etc., or other gas including oxygen, nitrogen, or
hydrogen, to the backside of substrate 242 through at least one gas
supply line 342. The backside gas supply system 340 can be a
multi-zone supply system such as a two-zone (center-edge) system,
wherein the backside pressure can be varied radially from the
center to edge.
[0047] The insulating component 312 can further comprise a thermal
insulation gap 350 in order to provide additional thermal
insulation between the temperature control component 314 and the
underlying mating component 310. The thermal insulation gap 350 can
be evacuated using a pumping system (not shown) or a vacuum line as
part of vacuum pumping system 250, and/or coupled to a gas supply
(not shown) in order to vary its thermal conductivity. The gas
supply can, for example, be the backside gas supply 340 utilized to
couple heat transfer gas to the backside of the substrate 242.
[0048] The mating component 310 can further comprise a lift pin
assembly 360 capable of raising and lowering three or more lift
pins 362 in order to vertically translate substrate 242 to and from
an upper surface of the substrate holder 300 and a transfer plane
in the processing system.
[0049] Each component 310, 312, and 314 can further comprise
fastening devices (such as bolts and tapped holes) in order to
affix one component to another, and to affix the substrate holder
300 to the chemical treatment chamber 221. Furthermore, each
component 310, 312, and 314 facilitates the passage of the
above-described utilities to the respective component, and vacuum
seals, such as elastomer O-rings, are utilized where necessary to
preserve the vacuum integrity of the processing system.
[0050] The temperature of the temperature-controlled substrate
holder 240 can be monitored using a temperature-sensing device 344
such as a thermocouple (e.g. a K-type thermocouple, Pt sensor,
etc.). Furthermore, a controller can utilize the temperature
measurement as feedback to the substrate holder assembly 244 in
order to control the temperature of substrate holder 240. For
example, at least one of a fluid flow rate, fluid temperature, heat
transfer gas type, heat transfer gas pressure, clamping force,
resistive heater element current or voltage, thermoelectric device
current or polarity, etc. can be adjusted in order to affect a
change in the temperature of substrate holder 240.
[0051] Referring again to FIGS. 2 and 3, chemical treatment system
220 can comprise an upper assembly 260 having a gas distribution
system.
[0052] In the embodiment shown in FIGS. 8A and 8B (expanded view of
FIG. 8A), a gas distribution system 420 for distributing a process
gas, which can comprise at least two gases, comprises a gas
distribution assembly 424, a first gas distribution plate 430
coupled to the gas distribution assembly 424 and configured to
couple a first gas to the process space of chemical treatment
chamber 221, and a second gas distribution plate 432 coupled to the
first gas distribution plate 430 and configured to couple a second
gas to the process space of chemical treatment chamber 221. The
first gas distribution plate 430, when coupled to the gas
distribution assembly 424, forms a first gas distribution plenum
440. Additionally, the second gas distribution plate 432, when
coupled to the first gas distribution plate 430 forms a second gas
distribution plenum 442. Although not shown, gas distribution
plenums 440, 442 can comprise one or more gas distribution baffle
plates. The second gas distribution plate 432 can further comprise
a first array of one or more orifices 444 coupled to and coincident
with an array of one or more passages 446 formed within the first
gas distribution plate 430, and a second array of one or more
orifices 448. The first array of one or more orifices 444, in
conjunction with the array of one or more passages 446, are
configured to distribute the first gas from the first gas
distribution plenum 440 to the process space of chemical treatment
chamber 221. The second array of one or more orifices 448 is
configured to distribute the second gas from the second gas
distribution plenum 442 to the process space of chemical treatment
chamber 221. The process gas can, for example, comprise NH.sub.3,
HF, H.sub.2, O.sub.2, CO, CO.sub.2, Ar, He, etc. Each orifice 444,
448 has a diameter and a length, wherein the diameter can range
from about 0.1 mm to about 10 cm, and the length can range from
about 0.5 mm to about 5 cm. In addition, each orifice can have a
protective barrier 261 on one or more surfaces exposed to the
processing space. Protective barrier 261 can be made of a material
selected from the same range of materials and can have the same
thickness as was described for protective barrier 241.
Alternatively protective barrier 261 is not required. As a result
of this arrangement, the first gas and the second gas are
independently introduced to the process space without any
interaction except in the process space.
[0053] Referring again to FIGS. 2 and 3, chemical treatment system
220 can further comprise a temperature controlled chemical
treatment chamber 221 that is maintained at an elevated
temperature. For example, a wall temperature control element 266
can be coupled to a wall temperature control unit 268, and the wall
temperature control element 266 can be configured to couple to the
chemical treatment chamber 221. The temperature control element
can, for example, comprise a resistive heater element and/or a
cooling element. The temperature of the chemical treatment chamber
221 can be monitored using a temperature-sensing device such as a
thermocouple (e.g. a K-type thermocouple, Pt sensor, etc.).
Furthermore, a controller can utilize the temperature measurement
as feedback to the wall temperature control unit 268 in order to
control the temperature of the chemical treatment chamber 221.
[0054] Referring again to FIG. 3, chemical treatment system 220 can
further comprise an upper assembly 260 that can include a
temperature controlled gas distribution system that can be use to
maintain the upper assembly and/or the process gas at a selected
temperature. For example, a temperature control element 267 can be
coupled to a gas distribution system temperature control unit 269,
and the temperature control element 267 can be configured to be
coupled to the gas distribution system 260. The temperature control
element can, for example, comprise a resistive heater element
and/or cooling element. The temperature of the upper assembly
and/or process gas can be monitored using a temperature-sensing
device such as a thermocouple (e.g. a K-type thermocouple, Pt
sensor, etc.). Furthermore, a controller can utilize the
temperature measurement as feedback to the gas distribution system
temperature control unit 269 in order to control the temperature of
the upper assembly and/or process gas.
[0055] Referring still to FIGS. 2 and 3, vacuum pumping system 250
can comprise a vacuum pump 252 and a gate valve 254 for throttling
the chamber pressure. Vacuum pump 252 can, for example, include a
turbo-molecular vacuum pump (TMP) capable of a pumping speed up to
5000 liters per second (and greater). For example, the TMP can be a
Seiko STP-A803 vacuum pump, or an Ebara ET1301W vacuum pump. TMPs
are useful for low pressure processing, typically less than about
50 mTorr. For high pressure (i.e., greater than about 100 mTorr) or
low throughput processing (i.e., no gas flow), a mechanical booster
pump and dry roughing pump can be used.
[0056] Referring again to FIG. 3, chemical treatment system 220 can
further comprise a controller 235 having a microprocessor, memory,
and a digital I/O port capable of generating control voltages
sufficient to communicate and activate inputs to chemical treatment
system 220 as well as monitor outputs from chemical treatment
system 220 such as temperature and pressure sensing devices.
Moreover, controller 235 can be coupled to and can exchange
information with substrate holder assembly 244, gas distribution
system 260, vacuum pumping system 250, gate valve assembly 296,
wall temperature control unit 268, and gas distribution system
temperature control unit 269. For example, a program stored in the
memory can be utilized to activate the inputs to the aforementioned
components of chemical treatment system 220 according to a process
recipe. One example of controller 235 is a DELL PRECISION
WORKSTATION 610.TM., available from Dell Corporation, Austin,
Tex.
[0057] In one example, FIG. 4 presents a chemical treatment system
1220 further comprising a lid 1222 with a handle 1223, at least one
clasp 1224, and at least one hinge 1227, an optical viewport 1225,
and at least one pressure sensing device 1226.
[0058] Optical viewport 1225 can comprise an optical window (not
shown), and an optical window flange (not shown) can couple the
optical window to the chamber wall. Optical monitoring system 202
can permit monitoring of optical emission from the processing space
through optical viewport 1225. For example, a photodiode, a
photomultiplier tube, a CCD, CID, or other solid state detector can
be used. However, other optical devices capable of analyzing
optical emissions, can be used as well. The monitoring system 202
can provide information to controller in order to adjust chamber
conditions before, during, or after processing. In an alternate
embodiment, optical monitoring system 202 can also include a light
source, such a laser.
[0059] Monitoring system component status using an optical
monitoring system can include determining if the intensity level of
an optical signal reflected from a system component exceeds a
threshold value, arriving at a determination of whether the system
component needs to be cleaned and/or replaced, and based on the
determination, either continuing with the process or stopping the
process.
[0060] For example, the status of a system component can be
determined during a plasma process, by monitoring optical emission
from a material deposited on a surface of a system component. One
possible method for determining the status of contamination
material on a system component is to use optical emission
spectroscopy (OES) to monitor a wavelength range where one or more
of the material's reflectivity characteristics change. During
processing, a material can coat a system component and the
thickness of the material can be determined by monitoring the
optical characteristics of the deposited material, and these
optical characteristics can be monitored during the plasma process.
When an optical characteristic crosses a specified threshold value,
a determination can be made whether or not to clean the system
component, and based on the determination, the process can be
continued or stopped.
[0061] As described in FIGS. 2 and 5, the thermal treatment system
210 can further comprise a temperature controlled substrate holder
270. The substrate holder 270 comprises a pedestal 272 thermally
insulated from the thermal treatment chamber 211 using a thermal
barrier 274. For example, the substrate holder 270 can be
fabricated from aluminum, stainless steel, or nickel, and the
thermal barrier 274 can be fabricated from a thermal insulator such
as PTFE, TFE, alumina, or quartz. The substrate holder 270 can
further comprise a temperature control element 276 embedded therein
and a substrate holder temperature control unit 278 coupled
thereto. The temperature control element 276 can, for example,
comprise a resistive heater element and/or cooling element.
[0062] The temperature of the substrate holder 270 can be monitored
using a temperature-sensing device such as a thermocouple (e.g. a
K-type thermocouple) or an optical fiber thermometer. Furthermore,
a controller 275 can utilize the temperature measurement as
feedback to the substrate holder temperature control unit 278 in
order to control the temperature of the substrate holder 270.
[0063] Referring again to FIG. 5, thermal treatment system 210 can
further comprise a temperature controlled thermal treatment chamber
211 that is maintained at a selected temperature. For example, a
thermal wall control element 283 can be coupled to a thermal wall
temperature control unit 281, and the thermal wall control element
283 can be coupled to the thermal treatment chamber 211. The
control element can, for example, comprise a resistive heater
element such as a tungsten, nickel-chromium alloy, aluminum-iron
alloy, or aluminum nitride filament. Alternatively, or in addition,
cooling elements may be employed in thermal treatment chamber 211.
The temperature of the thermal treatment chamber 211 can be
monitored using a temperature-sensing device such as a thermocouple
(e.g. a K-type thermocouple, Pt sensor, etc.). Furthermore,
controller 275 can utilize the temperature measurement as feedback
to the thermal wall temperature control unit 281 in order to
control the temperature of the thermal treatment chamber 211.
[0064] Referring again to FIG. 5, thermal treatment system 210 can
further comprise a temperature controlled upper assembly 284 that
can be maintained at a selected temperature. For example, an upper
assembly temperature control element 285 can be coupled to an upper
assembly temperature control unit 286, and the upper assembly
temperature control element 285 can be coupled to the upper
assembly 284. The temperature control element can, for example,
comprise a resistive heater element such as a tungsten,
nickel-chromium alloy, aluminum-iron alloy, or aluminum nitride
filament. The temperature of the upper assembly 284 can be
monitored using a temperature-sensing device such as a thermocouple
(e.g. a K-type thermocouple, Pt sensor, etc.). Furthermore,
controller 275 can utilize the temperature measurement as feedback
to the upper assembly temperature control unit 286 in order to
control the temperature of the upper assembly 284. Upper assembly
284 may additionally or alternatively include a cooling
element.
[0065] Referring again to FIGS. 2 and 5, thermal treatment system
210 can further comprise a substrate lifter assembly 290 and drive
system 530. Substrate lifter assembly 290 can be configured to
lower a substrate 242' to an upper surface of the substrate holder
270, as well as raise a substrate 242" from an upper surface of the
substrate holder 270 to a holding plane, or a transfer plane
therebetween. At the transfer plane, substrate 242" can be
exchanged with a transfer system utilized to transfer substrates
into and out of the chemical and thermal treatment chambers 221,
211. At the holding plane, substrate 242" can be cooled while
another substrate is exchanged between the transfer system and the
chemical and thermal treatment chambers 221, 211.
[0066] As shown in FIG. 9, the substrate lifter assembly 290 can
comprise a blade 500 having three or more tabs 510, a flange 520
for coupling the substrate lifter assembly 290 to the thermal
treatment chamber 211, and a drive system 530 for permitting
vertical translation of the blade 500 within the thermal treatment
chamber 211. The tabs 510 are configured to grasp substrate 242" in
a raised position, and to recess within receiving cavities 540
(FIG. 5) formed within the substrate holder 270 when in a lowered
position. The drive system 530 can, for example, be a pneumatic
drive system designed to meet various specifications including
cylinder stroke length, cylinder stroke speed, position accuracy,
non-rotation accuracy, etc., the design of which is known to those
skilled in the art of pneumatic drive system design.
[0067] Furthermore, a protective barrier 512 can be formed on one
or more surfaces of the blade 500. Protective barrier 512 can be
made of a material selected from the same range of materials and
can have the same thickness as was described for protective barrier
241. Alternatively protective barrier 512 is not required.
[0068] Referring still to FIGS. 2 and 5, thermal treatment system
210 can further comprise a vacuum pumping system 280. Vacuum
pumping system 280 can, for example, comprise a vacuum pump, and a
throttle valve such as a gate valve or butterfly valve. The vacuum
pump can, for example, include a turbo-molecular vacuum pump (TMP)
capable of a pumping speed up to 5000 liters per second (and
greater). TMPs are useful for low pressure processing, typically
less than about 50 mTorr. For high pressure processing (i.e.,
greater than about 100 mTorr), a mechanical booster pump and dry
roughing pump can be used.
[0069] Referring again to FIG. 5, thermal treatment system 210 can
further comprise a controller 275 having a microprocessor, memory,
and a digital I/O port capable of generating control voltages
sufficient to communicate and activate inputs to thermal treatment
system 210 as well as monitor outputs from thermal treatment system
210. Moreover, controller 275 can be coupled to and can exchange
information with substrate holder temperature control unit 278,
upper assembly temperature control unit 286, upper assembly 284,
thermal wall temperature control unit 281, vacuum pumping system
280, and substrate lifter assembly 290. For example, a program
stored in the memory can be utilized to activate the inputs to the
aforementioned components of thermal treatment system 210 according
to a process recipe. One example of controller 275 is a DELL
PRECISION WORKSTATION 610.TM., available from Dell Corporation,
Austin, Tex.
[0070] In an alternate embodiment, controllers 235 and 275 can be
the same controller.
[0071] As one example, FIG. 6 presents a thermal treatment system
2210 further comprising a lid 2212 with a handle 2213 and at least
one hinge 2214, an optical viewport 2215, at least one
pressure-sensing device 2216, at least one alignment device 2235,
and at least one fastening device 2236. Additionally, the thermal
treatment system 2210 can further comprise a substrate detection
system 2217 in order to identify whether a substrate is located in
the holding plane. The substrate detection system can, for example,
comprise a Keyence digital laser sensor.
[0072] In an example, the processing system 200, as depicted in
FIG. 2, can be a chemical oxide removal (COR) system for trimming
an oxide hard mask. The processing system 200 can comprise chemical
treatment system 220 for chemically treating exposed surface
layers, such as oxide surface layers, on a substrate, whereby
adsorption of the process chemistry on the exposed surfaces affects
chemical alteration of the surface layers. Additionally, the
processing system 200 can comprise thermal treatment system 210 for
thermally treating the substrate, whereby the substrate temperature
is elevated in order to desorb (or evaporate) the chemically
altered exposed surface layers on the substrate.
[0073] In the chemical treatment system 220, the process space 262
(see FIG. 2) is evacuated, and a process gas comprising HF and
NH.sub.3 is introduced. The processing pressure can range from
about 1 to about 100 mTorr, or alternatively, from about 2 to about
25 mTorr. The process gas flow rates can range from about 1 to
about 200 sccm for each specie, or alternatively, from about 10 to
about 100 sccm. Although the vacuum pumping system 250 is shown in
FIGS. 2 and 3 to access the chemical treatment chamber 221 from the
side, a uniform (three-dimensional) pressure field can be achieved.
Table I illustrates the dependence of the pressure uniformity at
the substrate surface as a function of processing pressure and the
spacing between the gas distribution system 260 and the upper
surface of substrate 242.
1 TABLE I (%) h (spacing) Pressure 50 mm 62 75 100 200 20 mTorr 0.6
NA NA NA NA 9 NA NA 0.75 0.42 NA 7 3.1 1.6 1.2 NA NA 4 5.9 2.8 NA
NA NA 3 NA 3.5 3.1 1.7 0.33
[0074] Additionally, the chemical treatment chamber 221 can be
heated to a temperature ranging from about 30.degree. to about
100.degree. C. For example, the temperature can be about 40.degree.
C. Additionally, the gas distribution system can be heated to a
temperature ranging from about 40.degree. to about 100.degree. C.
For example, the temperature can be about 50.degree. C. The
substrate can be maintained at a temperature ranging from about
10.degree. to about 50.degree. C. For example, the substrate
temperature can be about 20.degree. C.
[0075] In the thermal treatment system 210, the thermal treatment
chamber 211 can be heated to a temperature ranging from about
50.degree. to about 100.degree. C. For example, the temperature can
be about 80.degree. C. Additionally, the upper assembly can be
heated to a temperature ranging from about 50.degree. to about
100.degree. C. For example, the temperature can be about 80.degree.
C. The substrate can be heated to a temperature in excess of about
100.degree. C. For example, the temperature can range from about
100.degree. to about 200.degree. C. Alternatively, the temperature
can be about 135.degree. C.
[0076] The chemical treatment and thermal treatment described
herein can produce an etch amount of an exposed oxide surface layer
in excess of about 10 nm per 60 seconds of chemical treatment for
thermal oxide, an etch amount of the exposed oxide surface layer in
excess of about 25 nm per 180 seconds of chemical treatment for
thermal oxide, and an etch amount of the exposed oxide surface
layer in excess of about 10 nm per 180 seconds of chemical
treatment of ozone TEOS. The treatments can also produce an etch
variation across the substrate of less than about 2.5%.
[0077] Although only certain embodiments of this invention have
been described in detail above, those skilled in the art will
readily appreciate that many modifications are possible in the
embodiments without materially departing from the novel teachings
and advantages of this invention. Accordingly, all such
modifications are intended to be included within the scope of this
invention.
* * * * *