U.S. patent application number 10/638259 was filed with the patent office on 2004-04-29 for polishing pad with window.
Invention is credited to Swedek, Boguslaw A., Wiswesser, Andreas Norbert.
Application Number | 20040082271 10/638259 |
Document ID | / |
Family ID | 31721422 |
Filed Date | 2004-04-29 |
United States Patent
Application |
20040082271 |
Kind Code |
A1 |
Wiswesser, Andreas Norbert ;
et al. |
April 29, 2004 |
Polishing pad with window
Abstract
Polishing pads with a window, systems containing such polishing
pads, and processes that use such polishing pads are disclosed. For
example, a light beam having a wavelength between about 300 and 500
nm may be directed through a transparent portion of a polishing
surface of a polishing pad. The polishing may be for a shallow
trench isolation (STI) fabrication process, a spin-on glass
fabrication process and a silicon-on-insulator (SOI) fabrication
process.
Inventors: |
Wiswesser, Andreas Norbert;
(Freiberg, DE) ; Swedek, Boguslaw A.; (Cupertino,
CA) |
Correspondence
Address: |
FISH & RICHARDSON P.C.
3300 DAIN RAUSCHER PLAZA
MINNEAPOLIS
MN
55402
US
|
Family ID: |
31721422 |
Appl. No.: |
10/638259 |
Filed: |
August 7, 2003 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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10638259 |
Aug 7, 2003 |
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09669776 |
Sep 25, 2000 |
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6607422 |
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09669776 |
Sep 25, 2000 |
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09300183 |
Apr 27, 1999 |
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6190234 |
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09300183 |
Apr 27, 1999 |
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09237472 |
Jan 25, 1999 |
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6247998 |
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10638259 |
Aug 7, 2003 |
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10035391 |
Dec 28, 2001 |
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10638259 |
Aug 7, 2003 |
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10282730 |
Oct 28, 2002 |
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10638259 |
Aug 7, 2003 |
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10464423 |
Jun 18, 2003 |
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60390679 |
Jun 21, 2002 |
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60402416 |
Aug 9, 2002 |
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Current U.S.
Class: |
451/6 |
Current CPC
Class: |
B24B 37/042 20130101;
B24B 37/013 20130101; B24B 49/12 20130101; B24B 37/22 20130101;
B24B 37/205 20130101 |
Class at
Publication: |
451/006 |
International
Class: |
B24B 049/00 |
Claims
1. A method of polishing a substrate, comprising: bringing a
polishing surface having a transparent portion into contact with a
substrate; causing relative motion between the polishing surface
and the substrate; directing a light beam having a wavelength
between about 300 and 500 nm through the transparent portion of the
polishing surface; and detecting reflections of the light beam from
the substrate to determine a polishing endpoint.
2. The method of claim 1, wherein the light beam consists
essentially of blue light.
3. The method of claim 2, wherein the light beam consists
essentially of blue(indigo) light.
4. The method of claim 1, wherein the light beam has a wavelength
of about 400 nm.
5. The method of claim 4, wherein the wavelength is between 400 and
415 nm.
6. The method of claim 5, wherein the wavelength is approximately
405 nm.
7. The method of claim 1, wherein the light beam has a wavelength
of about 470 nm.
8. The method of claim 1, wherein the substrate includes an active
area in which an outermost oxide layer has an incoming thickness of
about 1000 to 2000 Angstroms.
9. The method of claim 1, wherein the polishing process is a step
in a shallow trench isolation (STI) fabrication process.
10. The method of claim 1, wherein the polishing process is a step
in a spin-on glass fabrication process.
11. The method of claim 1, wherein the polishing process is a step
in a silicon-on-insulator (SOI) fabrication process.
12. A method of polishing a substrate in a shallow trench isolation
(STI) process, comprising: bringing a polishing surface having a
transparent portion into contact with an active area of a
substrate, wherein the active area includes an oxide layer disposed
on a nitride layer; causing relative motion between the polishing
surface and the substrate; directing a light beam having a
wavelength consisting essentially of 400 to 415 nm through the
transparent portion of the polishing surface; and detecting
reflections of the light beam from the substrate to determine a
polishing endpoint.
13. A method of polishing a substrate, comprising: bringing a
polishing surface having a transparent portion into contact with a
substrate, the substrate needing polishing in one of a shallow
trench isolation (STI) fabrication process, a spin-on glass
fabrication process and a silicon-on-insulator (SOI) fabrication
process; causing relative motion between the polishing surface and
the substrate; directing a light beam having a wavelength between
about 300 and 500 nm through the transparent portion of the
polishing surface; and detecting reflections of the light beam from
the substrate to determine a polishing endpoint.
14. The method of claim 13, wherein the polishing process is a step
in a shallow trench isolation (STI) fabrication process.
15. The method of claim 13, wherein the polishing process is a step
in a spin-on glass fabrication process.
16. The method of claim 13, wherein the polishing process is a step
in a silicon-on-insulator (SOI) fabrication process.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation-in-part of U.S.
application Ser. No. 09/669,776, filed on Sep. 25, 2000, which is a
continuation of U.S. application Ser. No. 09/300,183, filed Apr.
27, 1999, which is a continuation-in-part of U.S. application Ser.
No. 09/237,472, filed Jan. 25, 1999. This application is also a
continuation-in-part of U.S. application Ser. No. 10/035,391, filed
Dec. 28, 2001. This application is also a continuation-in-part of
U.S. application Ser. No. 10/282,730, filed Oct. 28, 2002. This
application is also a continuation-in-part of U.S. patent
application Ser. No. 10/464,423, filed Jun. 18, 2003, which claims
priority under 35 U.S.C. .sctn. 119(e) to U.S. Provisional Patent
Application Nos. 60/390,679, filed Jun. 21, 2002. This application
also claims priority under 35 U.S.C. .sctn.119(e) to U.S.
Provisional Application Serial No. 60/402,416, filed Aug. 9, 2002.
The entire contents of each of these applications is incorporated
by reference herein.
TECHNICAL FIELD
[0002] The invention generally relates to polishing pads with a
window, systems containing such polishing pads, and processes for
making and using such polishing pads.
BACKGROUND
[0003] The process of fabricating modern semiconductor integrated
circuits (IC) often involves forming various material layers and
structures over previously formed layers and structures. However,
the underlying features can leave the top surface topography of an
in-process substrate highly irregular, with bumps, areas of unequal
elevation, troughs, trenches, and/or other surface irregularities.
These irregularities can cause problems in the photolithographic
process. Consequently, it can be desirable to effect some type of
planarization of the substrate.
[0004] One method for achieving semiconductor substrate
planarization or topography removal is chemical mechanical
polishing (CMP). A conventional chemical mechanical polishing (CMP)
process involves pressing a substrate against a rotating polishing
pad in the presence of a slurry, such as an abrasive slurry.
[0005] In general, it is desirable to detect when the desired
surface planarity or layer thickness has been reached and/or when
an underlying layer has been exposed in order to determine whether
to stop polishing. Several techniques have been developed for the
in situ detection of endpoints during the CMP process. For example,
an optical monitoring system for in situ measuring of uniformity of
a layer on a substrate during polishing of the layer has been
employed. The optical monitoring system can include a light source
that directs a light beam toward the substrate during polishing, a
detector that measures light reflected from the substrate, and a
computer that analyzes a signal from the detector and calculates
whether the endpoint has been detected. In some CMP systems, the
light beam is directed toward the substrate through a window in the
polishing pad. A layer of slurry is typically present between the
substrate and an upper surface of the window.
SUMMARY
[0006] In one aspect, the invention is directed to a method of
polishing a substrate. The method includes bringing a polishing
surface having a transparent portion into contact with a substrate,
causing relative motion between the polishing surface and the
substrate, directing a light beam having a wavelength between about
300 and 500 nm through the transparent portion of the polishing
surface, and detecting reflections of the light beam from the
substrate to determine a polishing endpoint.
[0007] Implementations of the invention may include one or more of
the following features. The light beam may consists essentially of
blue light, e.g., blue(indigo) light. The light beam may have a
wavelength of about 400 nm, e.g., between 400 and 415 nm, such as
405 nm. Alternatively, the light beam may have a wavelength of
about 470 nm. The substrate may have an outermost oxide layer with
an incoming thickness of about 1000 to 2000 Angstroms. The
polishing process may be a step in a shallow trench isolation (STI)
fabrication process.
[0008] In another aspect, the invention is directed to a method of
polishing a substrate in a shallow trench isolation (STI) process.
The method includes bringing a polishing surface having a
transparent portion into contact with an active area of a
substrate, causing relative motion between the polishing surface
and the substrate, directing a light beam having a wavelength
consisting essentially of 400 to 415 nm through the transparent
portion of the polishing surface, and detecting reflections of the
light beam from the substrate to determine a polishing endpoint.
The active area includes an oxide layer with a thickness between
about 1000 and 2000 Angstroms disposed on a nitride layer.
[0009] In another aspect, the invention is directed to a method of
polishing a substrate. In the method, a polishing surface having a
transparent portion is brought into contact with a substrate. The
substrate needing polishing in one of a shallow trench isolation
(STI) fabrication process, a spin-on glass fabrication process and
a silicon-on-insulator (SOI) fabrication process. Relative motion
is caused between the polishing surface and the substrate, a light
beam having a wavelength between about 300 and 500 nm is directed
through the transparent portion of the polishing surface, and
reflections of the light beam from the substrate are detected to
determine a polishing endpoint.
[0010] In certain embodiments, the window-polishing pad
construction used in the methods can exhibit one or more of the
following desirable characteristics: good transmission of energy at
the wavlength(s) of interest; negligible diffusing capabilities;
good resistance to scratching and/or abrasion during the CMP
process, good resistance to fluid (e.g., slurry or water) leakage;
and/or relatively low refractive index. CMP systems containing such
window-polishing pad constructions can exhibit one or more of the
following desirable characteristics: reduced scattering and
reflecting of the light beam at the upper surface of the window due
to scratches and irregularities; reduced reflection of the light
beam at the interface between the window and the slurry may be
reduced; improved the signal-to-noise ratio in the signal from the
detector; reduced slurry leakage around the perimeter of the
window.
[0011] In some embodiments, at least two (e.g., all) of these
properties are exhibited despite the window being made from a
material that generally has relatively low surface energy (e.g.,
low adhesion to many other materials). This can be particularly
advantageous when the material from which the window is made has a
relatively low surface energy (e.g., polytetrafluoroethylene) and
when the window material has good transmission in the blue range of
the visible spectrum (e.g., from about 400 nm to about 450 nm, such
as from about 400 nm to about 410 nm), which is desirable when a
blue laser or a blue LED is used as the light source.
[0012] Features, objects and advantages of the invention are in the
description, drawings and claims.
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] FIG. 1 is a schematic cross-sectional side view of a
polishing station from a chemical mechanical polishing system.
[0014] FIG. 2 is a schematic cross-sectional side view of a
polishing pad having an antireflective coating on a bottom surface
of the window.
[0015] FIG. 3 is a schematic cross-sectional side view of a
polishing pad in which the window is recessed from the polishing
surface.
[0016] FIG. 4A is a schematic cross-sectional side view of a window
having a roughened bottom surface.
[0017] FIG. 4B is a schematic bottom view of a window having a
roughened bottom surface.
[0018] FIG. 5 is a schematic top view of an embodiment of a
polishing pad with a window.
[0019] FIG. 6 is a cross-sectional view of the polishing pad of
FIG. 5.
[0020] Like reference symbols in the various drawings indicate like
elements.
DETAILED DESCRIPTION
[0021] As shown in FIG. 1, a CMP apparatus 10 includes a polishing
head 12 for holding a semiconductor substrate 14 against a
polishing pad 18 on a platen 16. CMP apparatuses are disclosed in
U.S. Pat. Nos. 5,738,574 and 6,247,998, and commonly owned and
co-pending U.S. patent application Ser. No. 10/358,852, filed on
Feb. 4, 2003, and entitled "Substrate Monitoring During Chemical
Mechanical Polishing," the entire contents of each of which are
incorporated by reference herein.
[0022] Polishing pad 18 can be a two-layer pad with a backing layer
20 that interfaces with the surface of the platen 16 and a covering
layer 22 with a polishing surface to contact the substrate. For
example, the covering layer 22 can be a durable rough layer (e.g.,
Rodel IC-1000), whereas the backing layer can be a more
compressible layer (e.g., Rodel Suba-IV). However, some pads have
only a covering layer and no backing layer. Alternatively, the
polishing pad can be a fixed-abrasive pad with abrasive particles
held in a containment media.
[0023] Typically the polishing pad material is wetted with the
chemical polishing solution or slurry with a chemically reactive
agent, and, assuming a "standard" polishing pad, abrasive
particles. However, some polishing processes are
"abrasiveless".
[0024] A hole 30 is formed in the top surface of the platen 16 and
is aligned with a window 36 formed in the overlying polishing pad
18. The window can be, for example, a solid transparent insert 44
secured in the covering layer 22. An aperture 46 can be formed
through the backing layer 20 and aligned with the window 36. In
addition, at least part of the hole 30 can be filled with a
transparent solid piece 31, such as a quartz block. The hole 30 and
the window 36 are positioned such that they have a view of the
substrate 14 held by the polishing head 12 during a portion of the
platen's rotation, regardless of the translational position of the
head 12.
[0025] An optical monitoring system, including a light source 32
(e.g., a laser, such as a red laser, a blue laser, or an infrared
laser, or a light emitting diode, such as a red light emitting
diode, a blue light emitting diode, or an infrared light emitting
diode) and a detector 42 (e.g., a photodetector) are fixed below
the top surface of the platen 16. For example, the optical
monitoring system can be located in a recess or space 17 inside the
platen 16 and can rotate with the platen. Alternatively, the
optical monitoring system could be a stationary system located
below the platen. The light source 32 projects a light beam 34
through the aperture 30 and the window 36 in the polishing pad 18
to strike the surface of the overlying substrate 14 (e.g., a
semiconductor substrate) at least during a time when the window 36
is adjacent the substrate 14. Light reflected from the substrate
forms a resultant beam 60 that is detected by the detector 42. An
unillustrated computer receives the measured light intensity from
the detector 42 and uses it to determine the polishing endpoint,
e.g., by detecting a sudden change in the reflectivity of the
substrate that indicates the exposure of a new layer, by
calculating the thickness removed from of the outer layer (such as
a transparent oxide layer) using interferometric principles, or by
monitoring the signal for predetermined endpoint criteria.
[0026] Slurry applied to the polishing pad 18 during the polishing
operation can form a layer 38 between the substrate 14 and the
polishing pad 18, including the upper surface of the window 36.
However, the interface between the window 36 and the polishing pad
18 is sealed, so that the slurry 38 cannot leak through to the
platen 16.
[0027] The window 36 should have at least some of the following
properties: chemical resistance to the slurry or other materials
used in the polishing process; good optical clarity (e.g., at least
about 25% light transmission over the wavelength range of the light
beam); a low refractive index (e.g., less than about 1.48); an
index of refraction that is about the same as the index of
refraction of the slurry; non-diffusing; and highly optically
isotropic. The window can be a polymer material, such as a
polyurethane or a fluoropolymer.
[0028] A low refractive index that is about the same as that of the
slurry and a high optical clarity can reduce reflections from the
air/window/water interface and improve transmission of the light
through the window to and from the substrate, thereby improving the
signal-to-noise ratio. The optical clarity should be high enough to
provide at least about 25% (e.g., at least about 50%, at least
about 80%, at least about 90%, at least about 95%) light
transmission over the wavelength range of the light beam used by
the detector. Typical wavelength ranges include the visible
spectrum (e.g., from about 400 nm to about 800 nm), the ultraviolet
(UV) spectrum (e.g., from about 300 nm to about 400 nm), and/or the
infrared spectrum (e.g., from about 800 nm to about 1550 nm). In
certain implementations, the wavelength range of interest can be
within a certain portion of the visible spectrum, such as the blue
portion of the visible spectrum (e.g., from about 400 nm to about
470 nm, from about 400 nm to about 415 nm, from about 400 nm to
about 410 nm, about 405 nm, or about 470 nm). In some
implementations, it can be particularly desirable for the material
to have a high transmittance (e.g., at least about 80%, at least
about 90%, at least about 95%) in the low wavelength range around
blue light and UV light (e.g., less than about 415 nm).
[0029] These lower wavelengths are useful when conducting optical
measurements during shallow trench isolation (STI) using fixed
abrasive (FA) or high selectivity slurry (HSS). The use of a light
source generating a light beam at around 400-415 mn is advantageous
in STI polishing. The active area of an STI device begins (from the
outermost layer) with an oxide layer of about 1000-2000 Angstroms
thickness, a nitride layer, a thin oxide layer (about 200
Angstroms), and finally the silicon. During the STI polishing
process, it is desired to remove the outermost oxide layer from the
active area and halt polishing within the nitride layer, ideally
removing less than 200 Angstroms of nitride. No portion of the thin
oxide layer should be removed. Because the nitride and oxide layers
have similar refractive index, the polishing transition from the
oxide layer to the nitride layer may not create a sudden change in
the signal from the detector 42. Consequently, one endpoint
detection approach in STI polishing is to polish for a preset
number of interference fringes and then polish for an additional
percentage of an interference cycle (termed a "supplemental" polish
step herein). This should result in polishing to a desired
thickness. Assuming that the number of fringes, and the percentage
of the cycle for the supplemental polish step, are selected
properly, polishing should halt after only a small amount of the
nitride layer has been removed.
[0030] However, one potential problem is that polishing rates can
fluctuate slightly, even during polishing of the same substrate. If
the amount of material removed in the supplemental polishing step
can be reduced, the time and thickness of material removed while at
an uncertain polishing rate can be reduced, and polishing can be
halted at the target thickness with greater accuracy.
[0031] An endpoint detector using a wavelength of 400-415 nm has
better peak-to-peak resolution (amount of material removed between
interference fringes) than an endpoint detector using a wavelength
in the red region of the spectrum (e.g., at about 670 nm).
Specifically, during polishing of an oxide layer with refractive
index 1.46, the wavelength of 400-415 nm can provide a peak-to-peak
thickness .DELTA.D of 1400 Angstroms, in contrast to a peak-to-peak
thickness .DELTA.D of 2400 Angstroms for red light. Since the
blue(indigo) wavelength light creates more interference fringes in
the signal from the detector 42, it is more likely that an
interference fringe will occur near the target thickness, and less
material will need to be removed during the supplemental polishing
step. In addition, due to the relatively small incoming thickness
variation of the oxide layer, there is little likelihood of an
erroneous endpoint detection.
[0032] For similar reasons, the use of a light source generating a
light beam at around 400-415 nm is advantageous in polishing of
spin-on glass, such as Boron Phosphate Spin-on Glass (BPSG)
polishing and in Silicon-on-Insulator (SOI) polishing. In a BPSG
process, a spin-on-glass is deposited over a nitride layer, and the
glass is then polished away without removing a significant portion
(e.g., less than 200 Angstroms) of the nitride. In a SOI process, a
first implanted and oxidized silicon wafer is bonded to a second
silicon wafer, and the first silicon substrate is split to provide
a thin implanted silicon layer on top of the oxide layer. The outer
silicon layer is then polished to planarize the silicon surface,
without removing a signficant portion (e.g., less than 50
Angstroms) of the silicon itself. Since the blue(indigo) wavelength
light creates more interference fringes in the signal from the
detector 42, it is more likely that an interference fringe will
occur near the target thickness, and polishing can be halted at the
target thickness with greater accuracy.
[0033] Greater than 80% transmission over the wavelength range of
about 400 nm to about 410 mn can permit the use of UV/blue LEDs. In
contrast, currently available windows typically have a transmission
of 20% or less in the wavelength range around about 400 nm to about
410 nm.
[0034] If the refractive index of the window material is low enough
to be close to the index of the slurry, reflections at the
window/slurry interface can be reduced. The refractive index can be
less than about 1.48 (e.g., less than about 1.45, less than about
1.4, less than about 1.35, about the same as the refractive index
of water). In some implementations, the refractive index of the
window material can be within about 0.07 (e.g., within about 0.03,
within about 0.01) of the refractive index of the slurry. In
certain implementations, the refractive index of the window
material can be within about 5.5% (e.g., within about 1%) of the
refractive index of the slurry. Using such window pad materials can
increase the real signal and reduce the background signal, thereby
improving signal-to-noise ratio of the optical intensity
measurements.
[0035] The window material can also be a highly optically isotropic
polymer. Most polymers are by nature non-isotropic. However, a
window material that is molded under low stress can exhibit better
isotropic optical properties. An isotropic material can help
maintain the polarization of the interrogating light beam. The
window material can be more isotropic than conventional
polyurethanes, that are used as window material.
[0036] A hydrophilic material can help ensure that there is always
a layer of slurry or water between the substrate and the window.
The presence of the layer of slurry or water can prevent the
creation of a window/air/wafer interface which can cause
significant signal distortion. Although polymer materials tend to
be hydrophobic, they can be changed from hydrophobic to hydrophilic
using surface treatments, such as roughening or etching. However,
for certain applications it may be useful to have a hydrophobic
window. For example, if a substrate being polished has a
hydrophilic layer (SiO.sub.2, Si.sub.3N.sub.4, etc.) on top of
hydrophobic layer (Poly Silicon, single crystal Silicon, etc.),
then the tendency of the substrate to repel water will increase as
the hydrophobic layer is polished away. This transition is
detectable by monitoring the intensity signal from the
detector.
[0037] The window should be sufficiently hard that the substrate
does not abrade the window. A soft material (such as a material
having a hardness in the Shore A range) has the tendency to deflect
under the load from the substrate. The substrate can then dig into
the soft window and contact the edge of the harder surrounding
polishing pad. This effect can create scratches and eventually can
cause chipping of the window. Therefore, the window should be about
the same hardness of the surrounding polishing pad material (or
only slightly softer). In general, a hardness in the Shore D 40-95
(e.g., 40-80) range is suitable.
[0038] Examples of window materials that can be used include
silicone, polyurethane and halogenated polymers (e.g.,
fluoropolymers). Examples of fluoropolymers include
polychlorotrifluoroethylene (PCTFE), perfluoroalkoxy (PFA),
fluorinated ethylene propylene (FEP), polytetra-fluoroethylene
(PTFE), poly pentadecafluorooctylacrylate (refractive index of
1.339), poly tetrafluoroethylene (refractive index of 1.350), poly
undecafluororexylacrylate (refractive index of 1.356), poly
nonafluropentylacrylate (refractive index of 1.360), poly
heptafluorobutylacrylate (refractive index of 1.367), poly
trifluorovinylacetate (refractive index of 1.375).
[0039] A commercially available material having most of the desired
properties is Calthane ND 3200 polyurethane (Cal Polymers, Long
Beach, Calif.). The material is a two part clear non-ambering
urethane elastomer, and it has a transmittance of at least 80% (for
a 150 mil thick sheet) for wavelengths of 350 nm and greater (out
to the end of the visible light spectrum at about 700 nm). The
material has a refractive index of about 1.48. Without being
limited to any particular theory, it is believed that the high
transmission of this polyurethane material (in contrast to
currently available polyurethane window materials) is the use of a
polyurethane that is substantially free of internal defects.
Although current polyurethanes used for windows are generally free
of additives, the such materials can include internal defects, such
as bubbles or voids, cracks, or microdomains (e.g., small areas of
differing crystalline structure or orientation) that act to diffuse
or scatter the light. By forming the polyurethane substantially
free of internal defects, it is possible to achieve a high optical
clarity.
[0040] Another commercially available material having most of the
desired properties is Conoptic DM-2070 polyurethane (Cytec Olean,
Olean, N.Y.). The material has a transmittance of at least 80% (for
a 150 mil thick sheet) for wavelengths of 350 nm and greater (out
to the end of the visible light spectrum at about 700 nm), and can
be made with a harness of about 45 to 57 Shore D (slightly softer
than "Calthane ND3200").
[0041] Additional examples of commercially available window
materials include FEP X 6301, FEP X 6303, FEP X 6307, PFA 6502 N,
PFA 6505 N, PFA 6510 N and PFA 6515 N (all from Dyneon LLC,
Oakdale, Minn.), the Neoflon.RTM. family of PCTFE polymers (from
Daikin America, Inc., Orangeburg, N.J.) and the Teflon.RTM. family
of PTFE polymers (from E.I. du Pont de Nemours and Company,
Wilmington, Del.). PCTFE, which is a hydrophobic material, is
available with a transmittance of at least 80% (for a 32 mil thick
sheet) for wavelengths of 300 nm and greater (out to the end of the
visible light spectrum at about 700 nm), a refractive index of
about 1.33, and a hardness of about 75 to 80 Shore D.
[0042] Referring to FIG. 2, in one implementation, an
antireflective coating 48 is formed on the bottom surface of the
window 36. Such an anti-reflective coating can reduce the
reflection at the interface between the aperture 46 and the insert
44 to essential zero, thereby enhancing the signal from the
substrate.
[0043] Referring to FIG. 3, in another implementation, a top
surface 50 of the window 36 is slightly recessed relative to the
polishing surface 24 of the covering layer 22. The recess can be
very small, and can be less than 5 mils, e.g., approximately 1-2
mils, relative to the polishing surface of the surrounding pad. By
very slightly recessing the window, scratching and wear of the
window surface can be reduced, thereby improving the consistency of
the optical signal throughout the polishing pad lifetime.
[0044] Referring to FIGS. 4A and 4B, an outer edge portion 52 of
the bottom surface 54 of the transparent insert 44 is roughened
before the insert 44 is secured to the polishing pad 18. The center
portion 56, surrounded by the edge portion 52, can be a smooth
surface. Thus, the edge portion 52 is rougher than the center
portion 56. The edge portion can be roughened by, for example,
etching or mechanical abrasion. By roughening the edge of the
bottom surface 54 (which contacts the backing layer 20), the
bonding of the window to the polishing pad can be improved. In
additional, the adhesive that bonds the window to the polishing pad
can be selected for a strong bond between the specific materials of
the covering layer 22 and the insert 44.
[0045] FIGS. 5 and 6 illustrate an alternate implantation of a
polishing pad 100 having a window 140 formed of a material that has
relatively high surface energy, such as a surface energy of at
least about 42 mJ/m.sup.2 (e.g., at least about 44 mJ/m.sup.2, at
least about 45 mJ/m.sup.2, at least about 46 mJ/m.sup.2). The
surface energy of a material refers to the is measured by, for
example, ASTM D5725-99. In general, window 140 is formed of one of
the window materials noted above.
[0046] Pad 100 includes a backing layer 110 having an upper surface
112 and a covering layer 120 having a polishing surface 122. An
opening 114 in layer 110 is aligned with an opening 124 in layer
120 such that ledges 116 of layer 110 extend under a portion of
opening 124. Backing layer 110 and covering layer 120 are held
together by an adhesive layer 130 that extends along upper surface
112 of backing layer 110. A window of solid material 140 is
disposed in opening 114 and is held in place by an adhesive layer
160. Layer 160 is adhered to adhesive layer 150, which, in turn, is
adhered to an upper surface 132 of layer 130. Although the
sidewalls of window 140 are depicted as being flush with the
sidewalls of covering layer 120, in some embodiments, there is a
small gap between the sidewalls of window 140 and the sidewalls of
covering layer 120. In addition, although the top surface of the
window 140 is depicted as flush with the polishing surface 122 of
the covering layer 120, in some embodiments the top surface can be
recessed below the polishing surface 122.
[0047] In general, backing layer 110, covering layer 120 and
adhesive layer 130 can be formed of any appropriate materials for
use in CMP processes. For example, layers 110, 120 and 130 can be
formed from materials used in the corresponding layers in
commercially available polishing pads, such as an IC-1000 polishing
pad or IC-1010 polishing pad (from Rodel, Phoenix, Ariz.). In some
embodiments, backing layer 110 is formed of a relatively
compressible layer, such as a Suba-IV layer (from Rodel, Phoenix
Ariz.). In certain embodiments, adhesive layer 130 is formed of a
double coated film tape. Commercially available double coated film
tapes are available from, for example, Minnesota Mining and
Manufacturing Co., Inc. (St. Paul, Minn.) (e.g., a member of the
442 family of double coated film tapes). Adhesive tapes from which
layer 130 can be formed are also commercially available from, for
example, Scapa North America (Windsor, Conn.).
[0048] In certain embodiments, the surface of a material can be
modified (e.g., by corona treatment, flame treatment and/or
fluorine gas treatment) to increase the surface energy of the
material. In general, the surface energy of a material having a
modified surface falls within the ranges noted above.
[0049] In general, adhesive layer 150 is formed of a material that
has good adhesion to both layers 130 and 160. In certain
embodiments, adhesive layer 150 is formed of one or more polymeric
adhesives. Examples of polymeric adhesives from which layer 150 can
be formed include acrylate polymers, including rubber toughened
acrylate polymers and high viscosity acrylate polymers. Examples of
acrylate polymers include cyanoacrylate polymers, including rubber
toughened cyanoacrylate polymers and high viscosity acrylate
polymers. Examples of commercially available adhesive polymers from
which layer 150 can be formed include Loctite.RTM. 401 adhesive,
Loctite.RTM. 406 adhesive, Loctite.RTM. 410 adhesive and
Loctite.RTM. 411 adhesive (Loctite Corporation, Rocky Hill,
Conn.).
[0050] In general, adhesive layer 160 is formed of a material that
has good adhesion to both layer 150 and window 140. Without wishing
to be bound by theory, it is believed using a material with such
adhesive properties for layer 160 can reduce the probability that
window 140 will become un-adhered within polishing pad 100. This
can be particularly desirable, for example, when window 140 is
formed of a material that has a relatively low surface energy
(e.g., when window 140 is formed of certain halogenated polymers,
such as a PTFE). It is also believed that using a material with
such adhesive properties for layer 160 can reduce the probability
that liquid (e.g., slurry or water) will leak from surface 142 of
window 140 to a region under window 140, layer 160, layer 150
and/or layer 140. This can be advantageous, for example, when such
leaking of a liquid would interfere with the optical measurements
being made (e.g., such as by moisture formation at a region under
window 140, layer 160, layer 150 and/or layer 140).
[0051] In certain embodiments, adhesive layer 160 is formed of one
or more polymeric adhesives. Examples of polymeric adhesives from
which layer 160 can be formed include polyolefin polymers. Examples
of commercially available adhesive polymers from which layer 160
can be formed include Loctite.RTM. primer adhesives (from Loctite
Corporation, Rocky Hill, Conn.), such as Loctite.RTM. 770 primer
adhesive, Loctite.RTM. 7701 primer adhesive, Loctite.RTM. 793
primer adhesive, Loctite.RTM. 794 primer adhesive, and Loctite.RTM.
7951 primer adhesive. In embodiments, layer 160 is formed of a
primer for layer 150 (e.g., a primer for an acrylate polymer, a
primer of a cyanoacrylate polymer).
[0052] While certain embodiments have been described, the invention
is not so limited.
[0053] As an example, the shape of window 36 when viewing the pad
from above can generally be selected as desired (e.g., a
rectangular plug, a circular plug, an oval plug).
[0054] As another example, the shape of window 36 when viewing the
pad along a cross-section (e.g., the view depicted in FIG. 1) can
generally be selected as desired (e.g., rectangular, tapered,
partially rectangular and partially tapered).
[0055] As an additional example, in certain implementations, window
36 can be partially supported by backing layer 20.
[0056] As another example, in some implementations, window 140 is
formed of a material that has a relatively low surface energy, such
as about 40 mJ/m.sup.2 or less (e.g., about 37 mJ/m.sup.2 or less,
about 35 mJ/m.sup.2 or less, about 33 mJ/m.sup.2 or less, about 31
mJ/m.sup.2 or less, about 25 mJ/m.sup.2 or less, about 20
mJ/m.sup.2 or less, about 18 mJ/m.sup.2).
[0057] As a further example, a portion of opening 114 in covering
layer 110 can be filled with a transparent solid piece 31, such as
a quartz block (e.g., within window 140).
[0058] As yet another example, the polishing pad can be formed
without layer 150.
[0059] As still a further example, the polishing pad can be formed
without layer 160.
[0060] As another example, an additional layer of adhesive (e.g.,
formed of a material noted above for layer 130) can be present on
the underside of backing layer 110. Typically, such an additional
layer would not extend over opening 114 in layer 110.
[0061] As an additional example, the polishing head and the
semiconductor substrate can translate during operation of the CMP
apparatus. In general, the light source and the light detector are
positioned such that they have a view of the substrate during a
portion of the rotation of the platen, regardless of the
translational position of the head.
[0062] As another example, the optical monitoring system within the
CMP apparatus can be a stationary system located below the
platen.
[0063] As an additional example, a polishing pad may contain a
covering layer and no backing layer, or a polishing pad can be a
fixed-abrasive pad with abrasive particles held in a containment
media.
[0064] Other embodiments are in the claims.
* * * * *