U.S. patent application number 10/434975 was filed with the patent office on 2003-10-30 for method and apparatus for self-referenced projection lens distortion mapping.
Invention is credited to Hunter, Robert JR., McArthur, Bruce, Smith, Adlai.
Application Number | 20030202174 10/434975 |
Document ID | / |
Family ID | 26943946 |
Filed Date | 2003-10-30 |
United States Patent
Application |
20030202174 |
Kind Code |
A1 |
Smith, Adlai ; et
al. |
October 30, 2003 |
Method and apparatus for self-referenced projection lens distortion
mapping
Abstract
A projection lens distortion error map is created using standard
overlay targets and a special numerical algorithm. A reticle
including a 2-dimensional array of standard overlay targets is
exposed several times onto a photoresist coated silicon wafer using
a photolithographic stepper. After exposure, the overlay targets
are measured for placement error using a conventional overlay
metrology tool. The resulting overlay error data is then supplied
to a software program that generates a lens distortion error map
for the photolithographic projection system.
Inventors: |
Smith, Adlai; (San Diego,
CA) ; McArthur, Bruce; (San Diego, CA) ;
Hunter, Robert JR.; (San Diego, CA) |
Correspondence
Address: |
David A. Hall
Heller Ehrman White & McAuliffe LLP
7th Floor
4350 La Jolla Village Drive
San Diego
CA
92122-1246
US
|
Family ID: |
26943946 |
Appl. No.: |
10/434975 |
Filed: |
May 9, 2003 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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10434975 |
May 9, 2003 |
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09835201 |
Apr 13, 2001 |
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6573986 |
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60254271 |
Dec 8, 2000 |
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Current U.S.
Class: |
356/124 ;
356/401; 430/22 |
Current CPC
Class: |
G03F 7/70633 20130101;
G03F 7/70558 20130101; G03F 7/706 20130101; Y10S 977/887
20130101 |
Class at
Publication: |
356/124 ;
356/401; 430/22 |
International
Class: |
G03F 009/00; G01B
009/00; G01B 011/00 |
Claims
We claim:
1. A method of determining intra-field distortion in a projection
imaging tool, the method comprising: exposing a reticle pattern
onto a substrate with a recording media in a first position,
wherein the reticle pattern includes at least two arrays of
alignment attributes, the arrays of alignment attributes have
features complementary to each other and the arrays have the same
pitch and are offset from each other; exposing the reticle pattern
onto the substrate in a second position, wherein the reticle
pattern in the second position overlaps the reticle pattern in the
first position and is shifted in a desired direction an amount that
corresponds to the offset; measuring positional offsets of the
alignment attributes; and determining a lens distortion map from
the resulting positional offset.
2. A method as defined in claim 1, wherein the desired direction
corresponds to an X direction.
3. A method as defined in claim 1, wherein the desired direction
corresponds to a Y direction.
4. A method as defined in claim 1, further comprising exposing the
reticle pattern in a third position on the substrate, wherein the
third position and the first position are separated by a desired
distance; and exposing the reticle pattern in a fourth position on
the substrate, wherein the fourth position overlaps the third
position and is shifted in a second desired direction an amount
that corresponds to the offset.
5. A method as defined in claim 4, wherein the first desired
direction corresponds to an X direction and the second desired
direction corresponds to a Y direction.
6. A method as defined in claim 4, further comprising: exposing a
reticle pattern in a fifth position on the substrate, wherein the
fifth position is separated from the first and third positions by a
desired distance; and exposing the reticle pattern in a sixth
positions on the substrate, wherein the sixth position overlaps the
fifth position and is shifted in a third desired direction an
amount that corresponds to the offset.
7. A method as defined in claim 6, wherein the third desired
direction corresponds to a rotation.
8. A method as defined in claim 1, wherein the substrate is a
semiconductor surface.
9. A method as defined in claim 1, wherein the substrate is a
silicon wafer.
10. A method as defined in claim 9, wherein the silicon wafer is a
notched wafer.
11. A method as defined in claim 1, wherein the substrate is a flat
panel display.
12. A method as defined in claim 1, wherein the substrate is a
reticle.
13. A method as defined in claim 1, wherein the substrate is a
photolithographic mask.
14. A method as defined in claim 1, wherein the substrate is an
electronic recording media.
15. A method as defined in claim 1, wherein the projection imaging
tool is used in a photolithographic stepper system.
16. A method as defined in claim 1, wherein the projection imaging
tool is used in a photolithographic scanner system.
17. A method as defined in claim 1, wherein the projection imaging
tool is used in an electronic beam imaging system.
18. A method as defined in claim 1, wherein the projection imaging
tool is used in a direct write tool.
19. A method as defined in claim 1, wherein the projection imaging
tool is used in a SCALPEL tool.
20. A method as defined in claim 1, wherein the projection imaging
tool is used in an extreme ultra-violet photolithographic tool.
21. A method as defined in claim 1, wherein the projection imaging
tool is used in a x-ray imaging system.
22. A method as defined in claim 1, wherein the recording media is
a positive resist material.
23. A method as defined in claim 1, wherein the recording media is
a negative resist material.
24. A method as defined in claim 1, wherein the recording media is
an electronic CCD.
25. A method as defined in claim 1, wherein the recording media is
a diode array.
26. A method as defined in claim 1, wherein the recording media is
a liquid crystal material.
27. A method as defined in claim 1, wherein the recording material
is an optically sensitive material.
28. A method as defined in claim 1, wherein exposing the reticle
pattern is at an exposure level below the minimum exposure dose of
the recording media.
29. A method as defined in claim 28, wherein the reticle pattern is
exposed a desired number of times.
30. A method of determining intra-field distortion in a projection
imaging tool, the method comprising: exposing a reticle pattern
onto a substrate with a recording media in a first position,
wherein the reticle pattern includes at least two arrays of
alignment attributes, the arrays of alignment attributes have
features complementary to each other and the arrays have the same
pitch and are offset from each other; exposing the reticle pattern
onto the substrate in a second position, wherein the first and
second positions are separated by a desired distance; exposing the
reticle pattern onto the substrate in a third position, wherein the
reticle pattern in the third position overlaps the reticle pattern
in the first position and is shifted in a first desired direction
an amount that corresponds to the offset; exposing the reticle
pattern onto the substrate in a fourth position, wherein the
reticle pattern in the fourth position overlaps the reticle pattern
in the second position and is shifted in a second desired direction
an amount that corresponds to the offset; measuring positional
offsets of the alignment attributes, and determining a lens
distortion map from the resulting positional offset.
31. A method as defined in claim 30, wherein the first desired
direction corresponds to an X direction.
32. A method as defined in claim 30, wherein the second desired
direction corresponds to a Y direction.
33. A method as defined in claim 30, further comprising: exposing a
reticle pattern onto the substrate in a fifth position; and
exposing a reticle pattern onto the substrate in a sixth position,
wherein the sixth position overlaps the fifth position and is
rotated by a desired amount with respect to the fifth position.
34. A method as defined in claim 33, wherein the rotation is 90
degrees.
35. A reticle for determining intra-field distortion in a
projection imaging tool, the reticle comprising: a first set of
reticle alignment attributes in a pattern with a constant pitch
selected to indicate the intra field distortion of a projection
system; and a second set of reticle alignment attributes that are
complementary to the first set of alignment attributes, the second
set of alignment attributes in a pattern with the same pitch as the
first set of alignment attributes and offset from the first set of
alignment attributes by a desired amount.
36. A reticle as defined in claim 35, wherein a first instance of
the second set of alignment attributes is offset from the first set
of alignment attributes in a first direction, and a second instance
of the second alignment attributes is offset from the first set of
alignment attributes in a second direction that is distinct from
the first direction.
37. A reticle as defined in claim 36, wherein the first and second
direction are perpendicular to one another.
38. A reticle as defined in claim 36, wherein the alignment
attributes are in a regular rectangular grid pattern.
39. A reticular as defined in claim 38, wherein the first direction
is parallel to the axis of the rectangular grid.
40. A reticle as defined in claim 35, further comprising a
partially reflecting dielectric coating.
41. A reticle as defined in claim 35, further comprising an
attenuated phase shift mask.
42. A projection imaging tool comprising: means for exposing a
reticle pattern onto a substrate with a recording media in a first
position, wherein the reticle pattern includes at least two arrays
of alignment attributes such that the arrays of alignment
attributes have features complementary to each other and the arrays
have the same pitch and are offset from each other; means for
exposing the reticle pattern onto the substrate in a second
position, wherein the reticle pattern in the second position
overlaps the reticle pattern in the first position and is shifted
in a desired direction by an amount that corresponds to the offset;
means for measuring positional offsets of the alignment attributes;
and means for determining a lens distortion map from the resulting
positional offset.
43. A reticle for determining intra-field distortion in a
projection imaging tool, the reticle comprising: means for
positioning a first set of reticle alignment attributes arranged in
a pattern with a constant pitch selected to indicate the intra
field distortion of a projection system; and means for positioning
a second set of reticle alignment attributes that are complementary
to the first set of alignment attributes, such that the second set
of alignment attributes are arranged in pattern with the same pitch
as the first set of alignment attributes and are offset from the
first set of alignment attributes by a desired amount.
Description
REFERENCE TO PRIORITY DOCUMENT
[0001] This application claims the benefit of U.S. Provisional
Application No. 60/254,271, filed on Dec. 8, 2000.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates generally to optical metrology
and more particularly to characterizing and monitoring the
intra-field distortions of projection imaging systems used in
semiconductor manufacturing.
[0004] 2. Description of the Related Art
[0005] Today's lithographic processing requires ever tighter
layer-to-layer overlay tolerances to meet device performance
requirements. Overlay registration is defined as the translational
error that exists between features exposed layer to layer in the
vertical fabrication process of semiconductor devices on silicon
wafers. Other names for overlay registration include, registration
error and pattern placement error, and overlay error. Overlay
registration on critical layers can directly impact device
performance, yield and repeatability. Increasing device densities,
decreasing device feature sizes and greater overall device size
conspire to make pattern overlay one of the most important
performance issues during the semiconductor manufacturing process.
The ability to accurately determine correctable and uncorrectable
pattern placement error depends on the fundamental techniques and
algorithms used to calculate lens distortion, stage error, and
reticle error.
[0006] A typical microelectronic device or circuit may consist of
20-30 levels or pattern layers. The placement of pattern features
on a given level must match the placement of corresponding features
on other levels, i.e., overlap, within an accuracy which is some
fraction of the minimum feature size or critical dimension (CD).
Overlay error is typically, although not exclusively, measured with
a metrology tool appropriately called an overlay tool using several
techniques. See for example, Semiconductor Pattern Overlay, N.
Sullivan, SPIE Critical Reviews Vol. CR52, 160:188. The term
overlay metrology tool or overlay tool means any tool capable of
determining the relative position of two pattern features or
alignment attributes, that are separated within 500 um (microns) of
each other. The importance of overlay error and its impact to yield
can be found elsewhere. See Measuring Fab Overlay Programs, R.
Martin, X. Chen, I. Goldberger, SPIE Conference on Metrology,
Inspection, and Process Control for Microlithography XIII, 64:71,
March, 1999; New Approach to Correlating Overlay and Yield, M.
Preil, J. McCormack, SPIE Conference on Metrology, Inspection, and
Process Control for Microlithography XIII, 208:216, March,
1999.
[0007] Lithographers have created statistical computer algorithms
(for example, Klass II and Monolith) that attempt to quantify and
divide overlay error into repeatable or systematic and
non-repeatable or random effects. See Matching of Multiple Wafer
Steppers for 0.35 micron Lithography using advanced optimization
schemes, M. van den Brink, et. Al., SPIE VOL. 1926, 188:207, 1993;
A Computer Aided Engineering Workstation for registration control,
E. McFadden, C. Ausschnitt, SPIE Vol. 1087, 255:266, 1989;
Semiconductor Pattern Overlay, supra; Machine Models and
Registration, T. Zavecz, SPIE Critical Reviews Vol. CR52, 134:159.
An overall theoretical review of overlay modeling can be found in
Semiconductor Pattern Overlay, supra.
[0008] Overlay error is typically divided into the following two
major categories. The first category, inter-field or grid overlay
error, is concerned with the actual position of the overall device
pattern imaged into the photoresist on a silicon wafer using an
exposure tool, i.e., stepper or scanner as referenced from the
nominal center of the wafer, see FIG. 18.
[0009] Obviously, the alignment of the device pattern on the
silicon wafer depends on the accuracy of the stepper or scanner
wafer handling stage or wafer stage. Overlay modeling algorithms
typically divide inter-field or grid error into five sub-categories
or components, each named for a particular effect: translation,
rotation, magnification or scale (in both x and y directions),
non-orthogonality, and residuals. See A Computer Aided Engineering
Workstation for registration control, supra.
[0010] The second category, intra-field overlay error, is the
positional offset of an individual point inside a field referenced
to the nominal center of an individual exposure field, as
illustrated in FIG. 19. The term "nominal center" means the exact
location of the center of a "perfectly" aligned exposure field;
this is the same as the requested field center coordinates given to
the lithography tool when it is programmed for the job. Intra-field
overlay errors are generally related to lens aberrations, scanning
irregularities, and reticle alignment. Four sub-categories or
components of intra-field overlay error include: translation,
rotation, magnification and lens distortion. It is common practice
to make certain assumptions concerning the magnitude and
interaction of stage error and lens distortion error in modern
overlay algorithms that calculate lens distortion. The common rule
is: "trust the accuracy of the stage during the creation of the
overlay targets by making the simple assumption that only a small
amount of stage error is introduced and can be accounted for
statistically". See A "golden standard" wafer design for optical
stepper characterization, K. Kenp, C. King, W. W, C. Stager, SPIE
Vol. 1464, 260:266, 1991; Matching Performance for multiple wafer
steppers using an advanced metrology procedure, M. Van den Brink,
et. Al., SPIE Vol. 921, 180:197, 1988.
[0011] It is important for this discussion to realize that most
overlay measurements are made on silicon product wafers after each
photolithographic process, prior to final etch. Product wafers
cannot be etched until the resist target patterns are properly
aligned to the underlying target patterns. See Super Sparse overlay
sampling plans: An evaluation of Methods and Algorithms for
Optimizing overlay quality control and Metrology tool Throughput,
J. Pellegrini, SPIE Vol. 3677, 72:82, 36220. Manufacturing
facilities rely heavily on exposure tool alignment and calibration
procedures. See Stepper Matching for Optimum line performance, T.
Dooly, Y. Yang, SPIE Vol. 3051, 426:432, 1997; Mix-And-Match: A
necessary Choice, R. DeJule, Semiconductor International, 66:76,
February 2000; Matching Performance for multiple wafer steppers
using an advanced metrology procedure, supra, to help insure that
the stepper or scanner tools are aligning properly; inaccurate
overlay modeling algorithms can corrupt the exposure tool
calibration procedures and degrade the alignment accuracy of the
exposure tool system. See Super Sparse overlay sampling plans: An
evaluation of Methods and Algorithms for Optimizing overlay quality
control and Metrology tool Throughput, supra.
[0012] Over the past 30 years the microelectronics industry has
experienced dramatic rapid decreases in critical dimension by
moving constantly improving photolithographic imaging systems.
Today, these photolithographic systems are pushed to performance
limits. As the critical dimensions of semiconductor devices
approach 50 nm the overlay error requirements will soon approach
atomic dimensions. See Life Beyond Mix-and-Match: Controlling
Sub-0.18 micron Overlay Errors, T. Zavecz, Semiconductor
International, July, 2000. To meet the needs of next generation
device specifications new overlay methodologies will need to be
developed. In particular, overlay methodologies that can accurately
separate out systematic and random effects and break them into
assignable causes will greatly improve device process yields. See A
New Approach to Correlating Overlay and Yield, supra.
[0013] In particular, those new overlay methodologies that can be
implemented into advanced process control or automated control
loops will be most important. See Comparisons of Six Different
Intra-field Control Paradigms in an advanced mix and match
environment, J. Pellegrini, SPIE Vol. 3050, 398:406, 1997;
Characterizing overlay registration of concentric 5.times. and
1.times. stepper Exposure Fields using Inter-field Data, F.
Goodwin, J. Pellegrini, SPIE Vol. 3050, 407:417, 1997. Finally,
another area where quantifying lens distortion error is of vital
concern is in the production of photomasks or reticles during the
electron beam manufacturing process. See Handbook of
Microlithography. and Microfabrication Vol. 1 P. Rai- Choudhury
1997 pg. 417.
[0014] Semiconductor manufacturing facilities generally use some
version of the following complex overlay procedure to help
determine the magnitude of lens distortion independent of other
sources of systematic overlay error. The technique has been
simplified for illustration. See Analysis of image field placement
deviations of a 5.times. microlithographic reduction lens, D.
MacMillen, et. Al., SPIE Vol. 334, 78:89, 1982. FIGS. 2 and 3 show
typical sets of overlay targets 300, including--one large or outer
box 302 and one small or inner target box 304. FIG. 1 shows a
typical portion of a distortion test reticle 102 used in the prior
art. It should be noted that the chrome target patterns on most
reticles are 4 or 5 times larger as compared with the patterns they
produce at the image plane, this simply means modern steppers are
reduction systems. Further, for purposes of discussion, it is
assumed that the reticle pattern is geometrically perfect, (in
practice, the absolute positions of features on the reticle can be
measured and the resulting errors subtracted off). First, a wafer
covered with photoresist is loaded onto the wafer stage and
globally aligned. Next, the full-field image of the reticle, 102 in
FIG. 1 is exposed onto the resist-coated wafer 2102 in FIG. 21. For
purposes of illustration, we assume that the distortion test
reticle consists of a 5.times.5 array of outer boxes evenly spaced
a distance M*P, across the reticle surface see FIG. 1. It is
typically assumed that the center of the optical system is
virtually aberration free. See Analysis of image field placement
deviations of a 5.times. microlithographic reduction lens, supra.
With this assumption, the reticle, 102 in FIG. 1 is now partially
covered using the reticle blades, 1704 in FIG. 17, in such a way
that only a single target at the center of the reticle field, box
104, in FIG. 1, is available for exposure. Next, the wafer stage is
moved in such a way as to align the center of the reticle pattern
directly over the upper left hand corner of the printed 5.times.5
outer box array, wafer position 2100, FIG. 21. The stepper then
exposes the image of the small target box onto the resist-coated
wafer. If the stepper stage and optical system were truly perfect
then the image of the small target box would fit perfectly inside
the image of the larger target box, as illustrated in FIGS. 4, and
21, from the previous exposure.
[0015] At this point the stepper and wafer stage are programmed to
step and expose the small target box in the 5.times.5 array where
each exposure is separated from the previous one by the stepping
distance P. With the assumption of a perfect stage, the final
coordinates of the small target boxes are assumed to form a perfect
grid, where the spacing of the grid is equal to the programmed
stepping distance, P. Finally, if the first full-field exposure
truly formed a perfect image, then the entire 5.times.5 array of
smaller target boxes would fit perfectly inside the 5.times.5 array
of larger target boxes as illustrated in FIG. 4A. Since the first
full-field exposure pattern is in fact distorted due to an
imperfect imaging system the actual position of the larger target
box will be displaced relative to the smaller target boxes for
example, as shown in FIG. 31. The wafer is then sent through the
final few steps of the photographic process to create the final
resist patterned overlay targets. The overlay error at each field
position, see FIGS. 28, 29, and 30, can be measured with a standard
optical overlay tool and displayed in vector notation see FIGS.
28-30. Using the models described below (eq1 and eq2) the overlay
data is analyzed and the lens distortion error is calculated.
[0016] The following inter-field and intra-field modeling equations
are commonly used to fit the overlay data using a least square
regression technique. See Analysis of image field placement
deviations of a 5.times. microlithographic reduction lens,
supra.
dxf(xf,yf)=Tx+s*xf-q*yf+t1*xf.sup.2+t2*xf*yf-E*(xf.sup.3+xf*yf.sup.2)
(eq 1)
dyf(xf,yf)=Ty+s*yf+q*xf+t2*yf.sup.2+t1*xf*yf-E*(yf.sup.3+yf*xf.sup.2)
(eq 2)
[0017] where
[0018] (xf,y)=intra-field coordinates
[0019] (dxf, dyf)(xf,yf)=intra-field distortion at position (xf,
yf)
[0020] (Tx, Ty)=(x,y) intra-field translation
[0021] s=intra-field overall scale or magnification
[0022] q=intra-field rotation
[0023] (t1, t2)=intra-field trapezoid error
[0024] E=intra-field lens distortion.
[0025] A problem with the this technique is two-fold, first, it is
standard practice to assume that the wafer stage error is very
small, randomly distributed, and can be completely accounted for
using a statistical model. See Analysis of image field placement
deviations of a 5.times. microlithographic reduction lens, supra; A
"golden standard" wafer design for optical stepper
characterization, supra; Matching Management of multiple wafer
steppers using a stable standard and a matching simulator, supra;
Matching Performance for multiple wafer steppers using an advanced
metrology procedure, supra. In general, the wafer stage introduces
both systematic and random errors, and since the lens distortion is
measured only in reference to the lithography tool's wafer stage,
machine to machine wafer stage differences show up as inaccurate
lens distortion maps. Secondly, the assumption that lens distortion
is zero at the center of the lens incorrect.
[0026] A technique for stage and `artifact` self-calibration is
described in See Self-calibration in two-dimensions: the
experiment, M. Takac, J. Ye, M. Raugh, R. Pease, C. Berglund, G.
Owen, SPIE Vol. 2725, 130:146, 1996; Error estimation for lattice
methods of stage self-calibration, M. Raugh, SPIE. Vol. 3050,
614:625, 1997. It consists of placing a plate (artifact) with a
rectangular array of measurable targets on a stage and measuring
the absolute positions of the targets using a tool stage and the
tool's image acquisition or alignment system. This measurement
process is repeated by reinserting the artifact on the stage but
shifted by one target spacing in the X-direction, then repeated
again with the artifact inserted on the stage shifted by one target
spacing in the Y-direction. Finally, the artifact is inserted at
90-degrees relative to its' initial orientation and the target
positions measured. The resulting tool measurements are a set of
(x, y) absolute positions in the tool's nominal coordinate system.
Then, the absolute positions of both targets on the artifact and a
mixture of the repeatable and non-repeatable parts of the stage x,
y grid error are then determined to within a global translation
(Txg, Tyg), rotation (qg) and overall scale ((sxg+syg)/2) factor.
This technique is not directly applicable to the present situation
since it requires that the measurements be performed on the same
machine that is being assessed by this technique. Furthermore, this
prior art technique requires measurements made on a tool in
absolute coordinates; the metrology tool measures the absolute
position of the printed targets relative to it's own nominal
center; so absolute measurements are required over the entire
imaging field (typical size>.about.100 mm 2).
[0027] Therefore there is a need for an effective way to determine
the lens distortion of a projection system independent of other
sources of systematic overlay error.
SUMMARY OF THE INVENTION
[0028] A projection lens distortion error map is created using
standard overlay targets and a special numerical algorithm. A
reticle including of a 2-dimensional array of standard overlay
targets is exposed several times onto a photoresist coated silicon
wafer using a photolithographic stepper or scanner. After exposure,
the overlay target patterns are measured for placement error using
a conventional overlay metrology tool. The resulting overlay data
is then supplied to a software program that generates a lens
distortion map for the photolithographic projection system. The
technique does not require the use of a special reference wafer in
order to obtain a complete set of lens distortion data.
[0029] One feature is that the technique is both self-consistent
and self-referenced thus making the procedure easy to implement in
production environments. Most importantly, the technique determines
all lens distortion error excluding total translational,
rotational, orthogonality and x and y scale placement errors. In
addition, the results are decoupled from the effects of stage,
wafer alignment, and reticle alignment error. Decoupling these
errors from lens distortion error allows the user to more
accurately model other sources of placement error in the
lithographic process. The technique can be adjusted for accuracy by
simply adjusting the number of measurements or stepping patterns
used to create the overlay targets.
[0030] One aspect includes exposing and printing a minimum of 4
full-field overlay targets at strategic locations across the wafer.
Another aspect includes 6 full-field exposures but determines the
lens distortion error to within translation, rotation and overall
scale or magnification. Additional aspects allow for further
reduction of the effects of overlay metrology tool noise.
[0031] The technique forms a methodology that can be modified
slightly to achieve varying degrees of overall accuracy. Also, the
technique can easily be implemented in a modem semiconductor
manufacturing facility. For example, a stepper prints the full
field of an overlay target reticle 2002 in FIG. 20, onto a resist
coated silicon wafer 2402 in FIG. 24 using four exposures. The
exposures occur in pairs labeled X and Y in FIG. 24. One pair of
exposures denoted X, 3502, in FIG. 35 consist of a first exposure
at some nominal position illustrated by the outline of field in
solid line, and a second exposure illustrated by a dotted line,
shifted in the X-direction by a distance p+dp as illustrated in
FIG. 35B. This results in two overlapped fields as shown in FIGS.
11 and 35B. Another pair of exposures (denoted Y, 3504, in FIG. 35
consist of a first exposure at some nominal position illustrated by
the outline of field in solid line and a second exposure
illustrated by a dotted line shifted in the Y-direction by a
distance p+dp as illustrated in FIG. 35A. This results in two
overlapped fields as shown in FIGS. 12 and 35A. The resulting
exposure patterns are then developed-out or delineated using a
standard photolithographic process. The patterned overlay targets,
or printed feature targets illustrated in FIGS. 11, 12, and 27, are
then measured using a standard optical metrology tool currently
available from commercial vendors such as KLA-Tencor of San Jose
[Model 5200, See KLA 5105 overlay brochure, KLA-Tencor; KLA 5200
overlay brochure, KLA-Tencor] or Bio-Rad Semiconductor Systems of
Mountain View, Calif. [Model Quaestor Q7, See Quaestor Q7 Brochure,
Bio-rad Semiconductor Systems].
[0032] Because the technique utilizes a high precision overlay
metrology tool for local measurements and extracts the global lens
distortion data in a unique way means the metrology error
multiplier is kept near unity. In addition, the technique can be
used in conjunction with traditional overlay techniques to better
understand, model and correct pattern placement errors. Additional
applications of the above outlined procedure include: improved
lithographic simulation using conventional optical modeling
software, advanced process control in the form of feedback loops
that automatically adjust the projection lens for optimum
performance, and reticle correction algorithms that compensate for
lens aberration. The technique forms a self-referenced methodology
that does not require a special set of overlay calibration wafers
or assumptions concerning the placement accuracy of the stage.
BRIEF DESCRIPTION OF THE DRAWINGS
[0033] The features of this invention believed to be novel and the
elements characteristic of the invention are set forth with
particularity in the appended claims. The figures are for
illustration purposes only and are not drawn to scale. The
invention itself, however, both as to organization and method of
operation, may best be understood by reference to the detailed
description which follows taken in conjunction the accompanying
drawings in which:
[0034] FIG. 1 shows a reticle schematic;
[0035] FIG. 2 shows schematics for FIG. 1;
[0036] FIG. 3 shows the reticle features corresponding to the
schematics of FIG. 2;
[0037] FIG. 4 shows example of overlapping regions;
[0038] FIG. 4A shows a perfectly centered box in box structure;
[0039] FIG. 5 is the schematic for outer box 2 of FIG. 9;
[0040] FIG. 6 is outer box 2 as printed on the wafer;
[0041] FIG. 7 is the schematic for inner box 1 of FIG. 9;
[0042] FIG. 8 is inner box 1 as printed on the wafer;
[0043] FIG. 9 is a schematic for 2-dimensional 4XOL reticle;
[0044] FIG. 10 is a typical 4XOL reticle overlay set as projected
onto the wafer;
[0045] FIG. 11 is a schematic of the X-shear overlay on the
wafer;
[0046] FIG. 12 is a schematic of the Y-shear overlay on the
wafer;
[0047] FIG. 13 is a 2-Dimensional reticle schematic, 90 degree
overlay of R-shear;
[0048] FIG. 14 are typical overlay patterns or alignment
attributes;
[0049] FIG. 15 is the process for the second embodiment of this
invention;
[0050] FIG. 16 illustrates some components of overlay or placement
error;
[0051] FIG. 17 is a photolithographic stepper or scanner
system;
[0052] FIG. 18 is an example of inter-field overlay error;
[0053] FIG. 19 is an example of intra-field overlay error;
[0054] FIG. 20 is shows the overlay reticle of this invention;
[0055] FIG. 20A shows the typical detail of the individual overlay
groups of FIG. 20;
[0056] FIG. 20B shows Intra-field indices projected onto the
wafer;
[0057] FIG. 20C shows a side view of reticle of FIG. 20;
[0058] FIG. 21 is an example of a prior art lens distortion
test;
[0059] FIG. 22 shows a wafer with alignment marks at 0 and 90
degrees;
[0060] FIG. 23 shows a wafer after exposure of the 0 degree
orientation patterns;
[0061] FIG. 24 shows a wafer after exposure of the 0 and 90 degree
orientation patterns
[0062] FIG. 25 shows a detail of the R-shear;
[0063] FIG. 26 shows a close-up of overlay groups for the
R-shear;
[0064] FIG. 27 shows a single box in box target;
[0065] FIG. 28 shows an overlay error vector plot;
[0066] FIG. 29 shows the overlay error due to translation;
[0067] FIG. 30 shows the overlay error due to rotation;
[0068] FIG. 31 shows an overlay measurement;
[0069] FIG. 32 shows an alternate embodiment overlay reticle;
[0070] FIG. 33 details inner box 3 of FIG. 32;
[0071] FIG. 33A details outer box 4 of FIG. 32;
[0072] FIG. 34 shows the process flow for the preferred embodiment
of this invention;
[0073] FIG. 34A shows a process flow for the alternate embodiment
utilizing sub-Eo exposure doses on the wafer;
[0074] FIG. 35 shows the wafer after exposure of the X and Y
shears;
[0075] FIG. 35A details the Y shear of FIG. 35;
[0076] FIG. 35B details the X shear of FIG. 35;
[0077] FIG. 36 shows the final results of the method of this
invention.
DETAILED DESCRIPTION OF THE INVENTION
[0078] Outline of the General Theory
[0079] Overlay error is referred to as overlay registration
include, registration error and pattern placement error, for our
work here, we will simply use the term overlay error or error. For
classification purposes, overlay error is typically divided into
the following two categories: grid or inter-field and intra-field
error. Intra-field error is the overlay error in placement within a
projection field, or simply field, of a lithographic projection
system. Inter-field error is the overlay error from field to field
on the wafer. The physical sources of these errors are generally
distinct; inter-field error is due to imaging objective aberrations
or possibly scanning dynamics while intra-field errors are due to
the wafer alignment system and the wafer stage. The focus of this
invention is determination of intra-field error.
[0080] In order to measure overlay error using conventional optical
metrology tools, special alignment attributes or overlay target
patterns, such as the ones shown in FIG. 14, are printed or imaged
onto a properly designed recording media using a photolithographic
imaging system such as the one illustrated in FIG. 17. Here
recording media is meant to include: positive or negative
photoresist, optically activated liquid crystals, CCD or diode
imaging arrays, and photographic film. There are many different
kinds of alignment attributes including, box-in-box 1402,
frame-in-frame 1404 as shown in FIG. 14, as well as gratings,
verniers, and electrical test structures. See Automated Electrical
Measurements of Registration Errors in Step and Repeat Optical
Lithography systems, T. Hasan, et. Al., IEEE Transactions on
Electron Devices, Vol. ED-27, No. 12, 2304:2312, December, 1980;
Capacitor Circuit Structure For Determining Overlay Error, K.
Tzeng, et. Al., U.S. Pat. No. 6,143,621, 2000; Overlay Alignment
Measurement of Wafers, N. Bareket, U.S. Pat. No. 607,925, 2000. The
present invention applies to photolithographic steppers, scanners,
e-beam systems, EUV and x-ray imaging systems. See Mix-And-Match: A
necessary Choice, supra; Reduction imaging at 14 nm using
multilayer-coated optics: Printing of features smaller than 0.1
micron, J. Bjorkholm, et. Al., Journal Vacuum Science and
Technology,B 8(6), 1509:1513, November/December 1990; Development
of XUV projection lithography at 60-80 nm, B. Newnam, et. Al., SPIE
vol. 1671, 419:436, 1992; Optical Lithography--Thirty years and
three orders of magnitude, J. Bruning, SPIE Vol. 3051, 14:27, 1997.
FIG. 28 shows a typical vector plot of overlay error measured with
a commercial overlay tool using box-in-box structures. In some
cases the overlay error can be measured using special in-situ
exposure tool metrology. See Matching Management of multiple wafer
steppers using a stable standard and a matching simulator, M. Van
den Brink, et. Al., SPIE VOL. 1087, 218:232, 1989. Vector
displacement plots like these illustrated in FIG. 28 give a visual
description of the direction, magnitude, and location of overlay
error, are mathematically separated into components using variety
of regression routines; FIGS. 28-30 are a schematic of this while
See Analysis of overlay distortion patterns, J. Armitage, J. Kirk,
SPIE Vol. 921, 207:221, 1988 contains numerous examples. Many
commercial software packages exist (Monolith, See A Computer Aided
Engineering Workstation for registration control, supra., Klass II;
See Lens Matching and Distortion testing in a multi-stepper,
sub-micron environment, A. Yost, et. al., SPIE Vol. 1087, 233:244,
1989) that model and statistically determine the relative magnitude
of the systematic and random inter-field and intra-field error
components for the purpose of process control and exposure tool
set-up. Once the inter-field and intra-field overlay data is
analyzed the results are used to adjust the calibration constants
and absolute position of the reticle stage, wafer handling stage
and projection lens system to improve pattern alignment.
[0081] Preferred Embodiment
[0082] A simple and accurate methodology that allows for the
extraction of lens distortion placement error excluding total
translation, rotation, orthogonality and x and y scale error and is
mathematically decoupled from stage error is described. FIG. 34
illustrates the methodology in terms of a process flow diagram.
First, in block 3402, a wafer is provided; wafer alignment marks
are not required, a bare wafer can be used. Next, in block 3402,
the wafer is coated with resist and loaded onto the projection
imaging system or machine. Then in block 3406, a reticle pattern
such as illustrated in FIG. 20, including a two dimensional array
of box structures or targets of various sizes, see FIG. 20A, is
loaded into the machine's reticle management system and aligned to
the reticle table. The reticle pattern be, for example, Nx.times.Ny
array of overlay groups as shown in FIG. 20A with a portion of the
whole Nx.times.Ny array being schematically shown in FIG. 20.
[0083] Then in blocks 3408 and 3410 the reticle pattern is exposed
at two field positions across the wafer illustrated by the solid
outlines in FIG. 35, with the field center at grid positions (xX1,
yX1), (xY1, yY1) representing the first exposure for the X-shear
and Y-shear respectively. To minimize confusion, these exposure
fields are typically separated by a distance >120%*max(Lx, Ly),
where the exposure field has rectangular dimension Lx.times.Ly.
Each full-field exposure produces an Mx.times.My array (Mx<=Nx,
My<=Ny) of overlay groups at the wafer surface, FIGS. 35A and
35B illustrate the Mx=My=2 case.
[0084] Using the same reticle shown in FIG. 20 the wafer stage is
blind stepped to expose the second layer of the X-shear pattern
with field center located at nominal grid position (xX1+p+dp, yX1).
Referring to FIGS. 20 and 20A, M*p is the feature pitch or period
of the overlay group on the reticle while M*dp is the offset of the
inner box structures within the overlay group from the outer box
structures. M is the reduction magnification ratio (M=4 or 5
typically) of the machine so that p is the pitch of overlay groups
on the wafer while dp is the wafer offset of inner and outer boxes
within an overlay group.
[0085] FIGS. 35A and 35B show the Y and X shears for an
Mx.times.My=2.times.2 array. The entire X-shear pattern consists of
a set of Mx-1.times.My overlapped box in box structures as
illustrated in FIG. 35B. Typical values for p are in the range of
about 0.5 mm to about 10 mm while typical values for dp are in the
range of about 0.02 mm to 1 mm. A constraint on p is that it be
small enough to provide detailed enough coverage of the lens
distortion pattern. Stated differently, the lens distortion should
be sampled at a fine enough interval such that the distortions at
the unmeasured locations in between the overlay groups are
reasonably approximated (<30% error) by interpolating the values
of lens distortion measured on pitch p. A constraint on offset dp
is that it lie within an area where the lens distortion is not
varying significantly. Stated differently, the overlay group as
shown in FIG. 20A, should lie within an isoplanatic distortion
patch of the lens, herein defined as being a region over which the
lens distortion varies by <5% of the maximum value of the lens
distortion.
[0086] Again using the same reticle as shown in FIG. 20, the wafer
stage is blind stepped to expose the second layer of the Y-shear
pattern with field center located at nominal grid position (xY1,
yY1+p+dp). FIG. 35A shows the pattern for an Mx.times.My=2.times.2
array. The entire pattern consists of a set of Mx.times.My-1
overlapped box in box structures as shown in FIG. 35B.
[0087] Next, in block 3412, the wafer is developed and sent to the
overlay tool where in block 3414 the following sets of overlay
targets are measured:
1 X-shears Mx-1 x My array (eq 3) Y-shears Mx x My-1 array (eq
4).
[0088] Then in block 3416 we reconstruct the overlay measurements
are used to produce the lens distortion map.
[0089] The X-shear measurements can be. modeled as: 1 BBx ( a , b ;
X ) = [ xf ( a + 1 ) + dxf ( a + 1 , b ) + Tx1 - q1 * yf ( b ) ] -
[ xf ( a ) + p + dxf ( a , b ) + Tx2 - q2 * yf ( b ) ] = dxf ( a +
1 , b ) - dxf ( a , b ) + ( Tx1 - Tx2 ) - ( q1 - q2 ) * yf ( b ) (
eq 5 ) BBy ( a , b ; X ) = [ yf ( b ) + dyf ( a + 1 , b ) + Ty1 +
q1 * xf ( a + 1 ) ] - [ yf ( b ) + dyf ( a , b ) + Ty2 + q2 * xf (
a ) ] = dyf ( a + 1 , b ) - dyf ( a , b ) + ( Ty1 - Ty2 ) + ( q1 *
xf ( a + 1 ) - q2 * xf ( a ) ) ( eq 6 )
[0090] where:
[0091] a,b=x,y indices for measurements. They cover the range,
a=1:Mx-1, b=1:My. They correspond with specific columns and rows of
the projected overlay groups as illustrated in FIG. 20B.
[0092] (BBx, BBy) (a,b;X)=(x,y) box in box measurement results for
the X-shears.
[0093] (xf(a), yf(b))=nominal projected overlay group (x,y)
position within the image field. For a rectangular grid of overlay
groups, these form a grid with pitch=p.
[0094] (dxf(a,b), dyf(a,b))=intra-field distortion at (x,y)
intra-field position=(xf(a), yf(b)). These are the unknown
quantities we wish to determine. The indices a, b cover the range:
a=1:Mx, b=1:My.
[0095] (Tx1, Ty1, q1)=stage positioning error in (x, y, yaw) for
the X shear exposure at nominal grid position (xX1, yX1).
[0096] (Tx2, Ty2, q2)=stage positioning error in (x, y, yaw) for
the X shear exposure at nominal grid position (xX1+p+dp, yX1).
[0097] Yaw is simply the rotation induced by the wafer stage on the
projected field.
[0098] The Y-shear measurements can be modeled as: 2 BBx ( a , b ;
Y ) = [ xf ( a ) + dxf ( a , b + 1 ) + Tx3 - q3 * yf ( b + 1 ) ] -
[ xf ( a ) + dxf ( a , b ) + Tx4 - q4 * yf ( b ) ] = dxf ( a , b +
1 ) - dxf ( a , b ) + ( Tx3 - Tx4 ) - ( q3 * yf ( b + 1 ) - q4 * yf
( b ) ) ( eq 7 ) BBy ( a , b ; Y ) = [ yf ( b + 1 ) + dyf ( a , b +
1 ) + Ty3 + q3 * xf ( a ) ] - [ yf ( b ) + p + dyf ( a , b ) + Ty4
+ q4 * xf ( a ) ] = dyf ( a , b + 1 ) - dyf ( a , b ) + ( Ty3 - Ty4
) + ( q3 - q4 ) * xf ( a ) ( eq 8 )
[0099] where
[0100] a,b=x,y indices for measurements. They cover the range,
a=1:Mx, b=1:My-1.
[0101] (BBx, BBy) (a,b;Y)=(x,y) box in box measurement results for
the Y-shears.
[0102] (Tx3, Ty3, q3)=stage positioning error in (x, y, yaw) for
the Y shear exposure at nominal grid position (xY1, yY1).
[0103] (Tx4, Ty4, q4)=stage positioning error in (x, y, yaw) for
the Y shear exposure at nominal grid position (xX1, yX1+p+dp)--and
the other symbols are as above.
[0104] In equations 5-8, the inner box occurs in the box in box
measurements in such a way that the position of the inner box is
shifted to the upper right hand corner (positive quadrant in x,y
plane) of the outer box, the resulting box in box measurement is
positive for both x and y components (BBx>0, BBy>0), See
FIGS. 26 and 27.
[0105] Equations 5-8 are typically over-determined in the sense of
equation counting, there are more equations than unknowns, but are
still singular in the mathematical sense; there is an ambiguity in
the solution of these equations. The unknowns in equations 5-8 are
the intra-field distortion map (dxf(a,b), dyf(a,b)), and all of the
stage positioning and yaw errors (Tx1,Ty1,q1), . . . (Tx4,Ty4,q4).
Now it can be mathematically shown that we can solve for the
distortion map (dxf(a,b), dyf(a,b)) uniquely to within a
translation, rotation, orthogonality, and x and y scale factors.
Put differently, if (dxf(a,b), dyf(a,b)) is a solution to equations
5-8, then (dxf(a,b)+Tx-(q-qo)*yf(b)+sx*xf(a),
dyf(a,b)+Ty+q*xf(a)+sy*yf(b)) is also a solution of equations 5-8
where:
[0106] Tx, Ty=arbitrary translation,
[0107] q=arbitrary rotation,
[0108] qo=arbitrary orthogonality
[0109] sx=arbitrary x-scale or x-magnification error
[0110] sy=arbitrary y-scale or y-magnification error.
[0111] To uniquely define a solution we can require that the
computed solution have zero values for these modes.
[0112] Then:
.SIGMA.dxf(a,b)=0 no x translation in intra-field distortion (eq
9)
.SIGMA.dyf(a,b)=0 no y translation in intra-field distortion (eq
10)
.SIGMA.xf(a)*dyf(a,b)=0 (eq 11)
.SIGMA.yf(b)*dxf(a,b)=0 (eq 12)
.SIGMA.xf(a)*dxf(a,b)=0 no x-scale or x-magnification error (eq
13)
.SIGMA.yf(b)*dyf(a,b)=0 no y-scale or y-magnification error (eq
14)
[0113] where .SIGMA. denotes summation over all intra-field grid
points (a=1:Mx, b=1 My). Equations 11 and 12 together are
interpreted as meaning there is no rotation or non-orthogonality.
Equations 9-14 represent the preferred embodiment for the
determination of the intra-field distortion since it can be shown
that when it is so determined, the stage errors in translation and
yaw are completely decoupled from the resulting intra-field grid
distortion. Put differently, the intra-field distortion so
determined is completely independent of wafer stage error, wafer
alignment error, and reticle alignment error.
[0114] Equations 5-8 are typically solved using the singular value
decomposition to produce the minimum length solution. See Numerical
Recipes, The Art of Scientific Computing, W. Press, et. Al,
Cambridge University Press, 52:64, 1990. It can be shown that the
constraints of equations 9-14 effectively define a unique solution
within the null space of equations 5-8, and therefore they can be
applied after the minimum length solution (dxfm, dyfm) has been
determined.
[0115] Then solving for Tx, Ty, q, qo, sx, sy from the
equations:
.SIGMA.dxfm(a,b)+Tx-(q-qo)*yf(b)+sx*xf(a)=0 (eq 14)
.SIGMA.dyfm(a,b)+Ty+q*xf(a)+sy*yf(b)=0 (eq 15)
.SIGMA.xf(a)*(dyfm(a,b)+Ty+q*xf(a)+sy*yf(b))=0 (eq 16)
.SIGMA.yf(b)*(dxfm(a,b)+Tx-(q-qo)*yf(b)+sx*xf(a))=0 (eq 17)
.SIGMA.xf(a)*(dxfm(a,b)+Tx-(q-qo)*yf(b)+sx*xf(a))=0 (eq 18)
.SIGMA.yf(b)*(dyfm(a,b)+Ty+q*xf(a)+sy*yf(b))=0 (eq 19)
[0116] and the intra-field distortion array satisfying eq 14-19
is:
dxf(a,b)=dxfm(a,b)+Tx-(q-qo)*yf(b)+sx*xf(a) (eq 20)
dyf(a,b)=dyfm(a,b)+Ty+q*xf(a)+sy*yf(b) (eq 21)
[0117] At this point the final results of the intra-field lens
distortion can be recorded in tabular form as shown in FIG. 36.
[0118] Further Embodiments
[0119] In another embodiment, if it is believed or there is
evidence that the wafer stage and reticle alignment system are
extremely accurate and repeatable for example if the accuracy and
repeatability <.about. overlay metrology tool accuracy and
repeatability), then all stage positioning and yaw errors
(Tx1,Ty1,q1), . . . (Tx4,Ty4,q4) can be set to zero in equations
5-8. Not solving for the T's and q's allows determining the
intra-field distortion uniquely to within an overall translation.
That is, a unique solution that includes field rotation,
orthogonality, and x and y scale is obtained if the constraints of
equation 9 and equation 10 through equations 14 and 15 are imposed
and then calculate (dxf, dyf) using the resulting Tx, Ty values and
setting q=qo=sx=sy=0 in equations 20 and 21.
[0120] Analysis of the solutions of eq. 5-8 shows that the
influence of overlay metrology tool measurement repeatability upon
the resulting intra-field distortion map is minimal. If, sol is the
one sigma, one axis overlay metrology tool statistical
repeatability, then in general, the root mean square (RMS) error
this induces on the intra-field distortion at point (xf(a), yf(b))
is given by;
.sigma.x(a,b)=Cx(a,b)*sol (eq 22)
.sigma.y(a,b)=Cy(a,b)*sol (eq 23)
[0121] where;
[0122] .sigma.x(a,b)/.sigma.y(a,b)=RMS error in
dxf(a,b)/dyf(a,b)
[0123] Cx(a,b)/Cy(a,b)=x/y error multipliers at intra-field point
(xf(a), yf(b)).
[0124] The error multipliers (Cx, Cy) can be calculated for each
intra-field point. In general, error multipliers near the edge or
corner of the Mx.times.My intra-field point array are larger than
error multipliers near the center of the array. These error
multipliers typically increase as 1n(Mx*My). For the specific case
of a square array (Mx=My), the error multiplier at the worst point
in the array is given approximately by;
Cworst=0.17+0.167*1n(Mx*My) (eq 24)
[0125] where In is the Napierian or base e logarithm.
[0126] So for an Mx.times.My=11.times.11 array, eq 24 would predict
a worst error multiplier, Cworst=0.97. The average error multiplier
is typically .about.30 % smaller than the worst or Cavg.about.0.68.
From this discussion it can be seen that by combining measurements
together we have reduced the effect of measurement noise leading to
a practical, robust, noise resistant procedure for determining
intra-field distortion. Furthermore, other embodiments that include
more shears, that is displacements of the arrays with respect from
each other, than the explicitly enumerated case of an X and Y
shear, will lead to even further decreases in the intra-field error
multipliers. It is also clear from this discussion, that
arrangements having in addition to the X, Y shear, shears that
cover the edges and corners and that are measured only at the edges
and 2 or more overlay groups deep around the edge of interest, or
measured only at the corners and 3 or more overlay groups deep
around the corner of interest will further reduce the error
multipliers at the highest or worst places.
[0127] Second Main Embodiment
[0128] Yet another embodiment allows for the extraction of lens
distortion placement error excluding total translation, rotation,
and overall scale or magnification overlay error and is
mathematically decoupled from stage error. FIG. 15 illustrates this
embodiment in terms of a process flow diagram. First in block 1502,
a wafer is provided. Typically it already has alignment marks
suitable for use at normal orientation (0 degrees) and when rotated
by 90-degrees as shown in FIG. 22. In cases where the projection
imaging tool, or machine, is capable of realigning an unpatterned
wafer after a 90-degree rotation to <2 microns, the alignment
marks are not required. Next in block 1504, the wafer is coated
with photoresist, loaded onto the machine, and possibly aligned. A
reticle pattern for example the reticle shown in FIG. 20,
consisting of a two dimensional array of box structures or targets
of various sizes as shown in FIG. 20A is loaded into the machine's
reticle management system and aligned to the reticle table in block
1506. This reticle pattern includes an Nx.times.Ny array of overlay
groups shown in one embodiment in FIG. 20 with a portion of the
whole Nx.times.Ny array being shown in FIG. 9. The reticle pattern
is exposed in blocks 1508, 1510, and 1512 at three field positions
across the wafer, shown by (solid outlines in FIG. 23, with the
field centers at nominal grid positions (xX1,yX1), (xY1, yY1),
(xR1, yR1), representing the first exposure for the X-shear,
Y-shear and R-shear respectively. To minimize confusion, these
exposure fields are typically separated by a distance
>120%*max(Lx, Ly), where the exposure field has rectangular
dimension Lx.times.Ly. Each full-field exposure produces an
Mx.times.My array (Mx<=Nx, My<=Ny) of overlay groups at the
wafer surface shown by the solid line overlay groups of FIGS. 11,
12, 25.
[0129] Using the same reticle the wafer stage is blind stepped to
expose the second layer of the X-shear pattern with field center
located at nominal grid position (xX1+p+dp, yX1). Referring to
FIGS. 5, 6, 7, 8, and 9, p is the feature pitch or period of the
overlay set or group as shown in FIG. 10, as projected onto the
wafer (p=reticle pitch/M=tool demagnification) and dp is the offset
of the inner box structures. A portion of the resulting overlapped
X-shear pattern is schematically shown in FIG. 11. The entire
X-shear pattern consists of a set of Mx-1.times.My overlapped box
in box structures illustrated in FIGS. 24-25. Typical values for p
are in the range of about 0.5 mm to about 10 mm while typical
values for dp are in the range of about 0.02 mm to about 1 mm. A
constraint on p is that it be small enough to provide detailed
enough coverage of the lens distortion pattern, while constraint on
offset dp is that it lie within an isoplanatic distortion patch of
the lens.
[0130] Again using the same reticle the wafer stage is blind
stepped to expose the second layer of the Y-shear pattern with
field center located at nominal grid position (xY1, yY1+p+dp). A
portion of the overlapped Y-shear pattern is schematically shown in
FIG. 12. The entire pattern consists of a set of Mx.times.My-1
overlapped box in box structures.
[0131] Next in block 1514, the wafer is rotated 90-degrees,
counterclockwise for our example, possibly aligned off of the
90-degree wafer alignment marks and the reticle exposed in block
1516 at nominal grid position (-yR1, xR1+dp). The resulting
overlapped R-shear pattern is schematically shown in FIG. 13 and
FIG. 25 and consists of a set of min(Mx, My).times.min(Mx, My)
overlapped box in box structures, where min is the minimum value of
the pair.
[0132] Next in block 1518, the wafer is developed and sent to the
overlay tool where in block 1520 we measure the following sets of
overlay targets:
2 X-shears Mx-1 x My (eq 25) Y-shears Mx x My-1 (eq 26) R-shears
min(Mx, My) x min(Mx, My) (eq 26.1)
[0133] Then, in block 1522 the overlay measurements are used to
produce the lens distortion map.
[0134] The X-shear measurements can be modeled as: 3 BBy ( a , b ;
R ) = [ yR1 + yf ( b ) + dyf ( a , b ) + Ty5 + q5 * xf ( a ) ] - [
yR1 + yf ( b ) + dxf ( a ' ( b ) , b ' ( a ) ) + Ty6 + q6 * yf ( b
) ] = dyf ( a , b ) + dxf ( a ' ( b ) , b ' ( a ) ) + ( Ty5 - Ty6 )
+ ( q5 - q6 ) * xf ( a ) ( eq 27 ) BBy ( a , b ; X ) = [ yf ( b ) +
dyf ( a + 1 , b ) + Ty1 + q1 * xf ( a + 1 ) ] - [ yf ( b ) + dyf (
a , b ) + Ty2 + q2 * xf ( a ) ] = dyf ( a + 1 , b ) - dyf ( a , b )
+ ( Ty1 - Ty2 ) + ( q1 * xf ( a + 1 ) - q2 * xf ( a ) ) ( eq 28
)
[0135] where:
[0136] a,b=x,y indices for measurements. They cover the range,
a=1:Mx-1, b=1: My.
[0137] (BBx, BBy) (a,b;X)=(x,y) box in box measurement results for
the X-shears.
[0138] (xf(a), yf(b))=nominal projected overlay group (x,y)
position within the image field. Forms a rectangular grid.
[0139] (dxf(a,b), dyf(a,b))=lens distortion at (x,y) field
position=(xf(a), yf(b)).
[0140] (Tx1, Ty1, q1)=stage positioning error in (x,y,yaw) for the
X shear exposure at nominal grid position (xX1, yX1).
[0141] (Tx2, Ty2, q2)=stage positioning error in (x,y,yaw) for the
X shear exposure at nominal grid position (xX1+p+dp, yX1).
[0142] The Y-shear measurements can be modeled as: 4 BBx ( a , b ;
Y ) = [ xf ( a ) + dxf ( a , b + 1 ) + Tx3 - q3 * yf ( b + 1 ) ] -
[ xf ( a ) + dxf ( a , b ) + Tx4 - q4 * yf ( b ) ] = dxf ( a , b +
1 ) - dxf ( a , b ) + ( Tx3 - Tx4 ) - ( q3 * yf ( b + 1 ) - q4 * yf
( b ) ) ( eq 29 ) BBy ( a , b ; Y ) = [ yf ( b + 1 ) + dyf ( a , b
+ 1 ) + Ty3 + q3 * xf ( a ) ] - [ yf ( b ) + p + dyf ( a , b ) +
Ty4 + q4 * xf ( a ) ] = dyf ( a , b + 1 ) - dyf ( a , b ) + ( Ty3 -
Ty4 ) + ( q3 - q4 ) * xf ( a ) ( eq 30 )
[0143] where:
[0144] a,b=x,y indices for measurements. They cover the range,
a=1:Mx, b=1:My-1.
[0145] (BBx, BBy) (a,b;Y)=(x,y) box in box measurement results for
the Y-shears.
[0146] (Tx3, Ty3, q3)=stage positioning error in (x,y,yaw) for the
Y shear exposure at nominal grid position (xY1, yY1).
[0147] (Tx4, Ty4, q4)=stage positioning error in (x,y,yaw) for the
Y shear exposure at nominal grid position (xY1, yY1+p+dp)--and the
other symbols are as above.
[0148] The R-shear measurements can be modeled as: 5 BBx ( a , b ;
R ) = [ xR1 + xf ( a ) + dxf ( a , b ) + Tx5 - q5 * yf ( b ) ] - [
xR1 + xf ( a ) + dyf ( a ' ( b ) , b ' ( a ) ) + Tx6 - q6 * yf ( b
) ] = dxf ( a , b ) - dyf ( a ' ( b ) , b ' ( a ) ) + Tx5 - Tx6 ) -
( q5 - q6 ) * yf ( b ) ( eq 31 ) BBy ( a , b ; R ) = [ yR1 + yf ( b
) + dyf ( a , b ) + Ty5 + q5 * xf ( a ) ] - [ yR1 + yf ( b ) + dxf
( a ' ( b ) , b ' ( a ) ) + Ty6 + q6 * yf ( b ) ] = dyf ( a , b ) +
dxf ( a ' ( b ) , b ' ( a ) ) + ( Ty5 - Ty6 ) + ( q5 - q6 ) * xf (
a ) ( eq 32 )
[0149] where
[0150] a,b=x,y indices for measurements. They cover the range,
a=1:Mx, b=1+(My-Mx)/2:(My+Mx)/2
[0151] a'(b)=(My+Mx)/2+1-b (where a' represents the rotated overlay
group) b'(a)=(My-Mx)/2+a
[0152] (BBx, BBy) (a,b;R)=(x,y) box in box measurement results for
the R-shears.
[0153] (Tx5, Ty5, q5)=stage positioning error in (x,y,yaw) for the
R shear exposure at nominal grid position (xR1, yR1).
[0154] (Tx6, Ty6, q6)=stage positioning error in (x,y,yaw) for the
R shear exposure at nominal grid position (-yR1, xR1+dp)--and the
other symbols are as above.
[0155] The ranges of a,b,a',b' are determined by the need to
overlap the rectangular Mx.times.My array of overlay groups when
they are placed at right angles to each other as illustrated in
FIG. 25. When Mx<=My the index ranges will be as above.
[0156] When Mx>My, we have;
[0157] a=1+(Mx-My)/2:(Mx+My)/2
[0158] b=1:My
[0159] a'(b)=(Mx+My)/2+1-b
[0160] b'(a)=(Mx-My)/2+a.
[0161] In equations 27-32, the inner box occurs in the box in box
measurements in such a way that the position of the inner box is
shifted to the upper night hand corner (positive quadrant in x,y
plane) of the outer box, the resulting box in box measurement is
positive for both x and y components (BBx>0, BBy>0) see FIG.
27.
[0162] Equations 27-32 are typically over-determined in the sense
of equation counting, there are more equations than unknowns, but
are still singular in the mathematical sense; there is an ambiguity
in the solution of these equations. The unknowns in equations 27-32
are the intra-field distortion map (dxf(a,b), dyf(a,b)), and all of
the stage positioning and yaw errors (Tx1,Ty1,q1), . . .
(Tx6,Ty6,q6). Now it can be mathematically shown that we can solve
for the distortion map (dxf(a,b), dyf(a,b)) uniquely to within a
translation, rotation, and an overall scale or symmetric
magnification. Put differently, if (dxf(a,b), dyf(a,b)) is a
solution to equations 6-11, then (dxf(a,b)+Tx-q*yf(b)+s*xf(a),
dyf(a,b)+Ty+q*xf(a)+s*yf(b)) is also a solution of equations 27-32
where:
[0163] Tx, Ty=arbitrary translation,
[0164] q=arbitrary rotation,
[0165] s=arbitrary overall scale or magnification error.
[0166] To uniquely define a solution we can require that the
computed solution have zero values for these modes.
[0167] Then:
.SIGMA.dxf(a,b)-0 no x translation in intra-field distortion (eq
33)
.SIGMA.dyf(a,b)=0 no y translation in intra-field distortion (eq
34)
.SIGMA.xf(a)*dyf(a,b)-yf(b)*dxf(a,b)=0 no rotation in intra-field
distortion (eq 35)
.SIGMA.xf(a)*dxf(a,b)+yf(b)*dyf(a,b)=0 no overall scale or
symmetric magnification in intra-field distortion (eq 36)
[0168] .SIGMA. denotes summation over all intra-field grid points
(a=1:Mx, b=1:My). Equations 33-36 represent the preferred technique
for the determination of the intra-field distortion since it can be
shown that when it is so determined, the stage errors in
translation and yaw are completely decoupled from the resulting
intra-field grid distortion. Put differently, the intra-field
distortion is completely determined independent of wafer stage
error, wafer alignment error, and reticle alignment error.
[0169] Equations 27-32 are typically solved using the singular
value decomposition to produce the minimum length solution. See
Numerical Recipes, The Art of Scientific Computing, supra. It can
be shown that the constraints of equations 33-36 effectively define
a unique solution within the null space of equations 27-32, and
therefore they can be applied after the minimum length solution
(dxfm, dyfm) has been determined.
[0170] Solve for Tx, Ty, q, s, from the equations:
.SIGMA.dxfm(a,b)+Tx-q*yf(b)+s*xf(a)=0 (eq 37)
.SIGMA.dyfm(a,b)+Ty+q*xf(b)+s*yf(b)=0 (eq 38)
.SIGMA.xf(a)*(dyfm(a,b)+Ty+q*xf(b)+s*yf(b))-yf(b)*(dxfm(a,b)+Tx-q*yf(b)+s*-
xf(a))=0 (eq 39)
.SIGMA.xf(b)*(dxfm(a,b)+Tx-q*yf(b)+s*xf(a))+yf(a)*(dyfm(a,b)+Ty+q*xf(b)+s*-
yf(b))=0 (eq 40)
[0171] and the intra-field distortion array satisfying eq 37-40
is:
dxf(a,b)=dxfm(a,b)+Tx-q*yf(b)+s*xf(a) (eq 41)
dyf(a,b)=dyfm(a,b)+Ty+q*xf(a)+s*yf(b) (eq 42).
[0172] With regard to error multipliers, the effect of including
the R-shears in these calculations is to further reduce the error
multipliers from the X, Y shear case since including more
measurements increases the averaging of overlay metrology tool
noise and thereby decreases it's influence.
[0173] At this point the intra-field distortion (dxf, dyf) has been
determined to within a translation, rotation, and an overall scale
or symmetric magnification factor and can present and further
utilize these results when they are presented in the form of either
a text, as shown in FIG. 36, or electronic table.
[0174] Variation of the Second Embodiment
[0175] In another embodiment, if its believed, or there is
evidence, that the wafer stage and reticle alignment system are
extremely accurate and repeatable, for example if the accuracy and
repeatability <.about. overlay metrology tool
accuracy/repeatability, then all stage positioning and yaw errors
(Tx1,Ty1,q1), . . . (Tx6,Ty6,q6) can be set to zero in equations
27-32. Not solving for the T's and q's allows determining the
intra-field distortion uniquely to within an overall translation.
That is, a unique solution is obtained that includes field rotation
and overall scale if the constraints of equation 33 and equation 34
through equations 37 and 38 are imposed and then calculate (dxf,
dyf) using the resulting Tx, Ty values and setting q=s=0 in
equations 41 and 42.
[0176] Reticle Plate Fabrication
[0177] The reticle plate for the preferred embodiment is shown in
FIG. 20. The preferred embodiment makes no strict requirements on
the size of the reticle plate, the shape of the overlay target
patterns or the types of materials used to fabricate the mask plate
for example, see FIGS. 20, 32, 33, and 33A.. Hundreds of different
overlay target patterns are available. See Direct-referencing
automatic two-points reticle-to-wafter alignment using a projection
column servo system, M. Van den Brink, H. Londers, S. Wittekoek,
SPIE Vol. 633, Optical Microlithography V, 60:71, 1986. The
preferred embodiment will work with any stepper or scanner system
using any type of optical overlay targets or alignment
attributes.
[0178] Heretofore, we have considered the reticle creating the
overlay patterns as perfect. In practice, errors in the reticle
manufacture can be taken into account by first measuring the
position of all the individual structures in all of the overlay
groups using an absolute metrology tool such as the Nikon 5I. See
Measuring system XY-51, supra, or Leica LMS IPRO; See Leica LMS
IPRO brochure, supra, series tools. Next, in formulating equations
5-8, this reticle error, divided by the lithographic projection
tool demagnification, is explicitly written out on the right hand
side and then subtracted from the resulting overlay measurements on
the left hand side of the equations, thereby canceling out on the
right hand side. The result is equations 5-8 as they are written
above but with a correction applied to the overlay measurements
appearing on the left hand side. The discussion of the solution of
these equations then proceeds word for word as before.
[0179] Further Discussion and Embodiments:
[0180] The previous embodiments allow us to extract the intra-field
distortion with high accuracy and arbitrary spatial resolution. One
key assumption has been that the intra-field distortion (dxf, dyf)
is constant from exposure to exposure. This is certainly true over
short (<1-day) time intervals under normal operating conditions
for steppers or step and repeat (stepper) projection systems. See
Optical Lithography--Thirty years and three orders of magnitude,
supra] where the intra-field distortion is entirely due to lens
aberrations or reticle misalignment. It is also true of step and
scan (scanner) systems for exposures that are static; that is the
scanning mechanism is not employed during the exposure so that only
the strip or annular field; See Optical Lithography--Thirty years
and three orders of magnitude, supra of the projection lens
determines the field size. In these cases, it is possible to
determine the distortion of the static lens field. More generally,
the technique of this invention can be applied without loss of
accuracy due to non-repeatability in time of the intra-field
distortion to any projection lithographic system operated in a mode
where the source of the intra-field distortion is constant over
short time periods.
[0181] In scanners, there is always a distortion contribution from
non-repeatable synchronization of the wafer and reticle stages
during the scanning action; this is evident from single machine
overlay results. See 0.7 NA DUV step and Scan system for 150 nm
Imaging with Improved Overlay, J. V. Schoot, SPIE vol. 3679,
448:463, 1999. The technique can still be applied in these
situations if this non-repeatability is small enough then there is
little to no increase in the error of determination of (dxf, dyf).
Larger non-repeatabilities in the intra-field error may require
applying the technique multiple times to the same machine to
determine in each instance the intra-field distortion. These
separate instances of intra-field distortion are then averaged to
get an estimate of the repeatable part of the
intra-field-distortion. Deviations in the data from this average
value allow estimating the standard deviation of the intra-field
distortion from the repeatable component. Again, this technique can
be used in the presence of other non-repeatabilities in the
intra-field distortion such as those caused by electron optics in
e-beam lithography.
[0182] A variation of the first two embodiments allows the user to
extract the repeatable part of the intra-field distortion with a
minimum number of exposed fields and overlay metrology is
described. Below, Eo is the E-zero or minimum exposure dose
required for a large, i.e. 200 micron at wafer, open area pattern
on the reticle to become fully developed, or cleared in the case of
positive resist. FIG. 34A illustrates a process flow diagram where
in blocks 3442, 3444 and 3446, the overlay target reticle and
resist coated wafer are loaded into the projection imaging tool, or
machine, as described above. Next in blocks 3448 and 3450, instead
exposing each field with a single scanning or exposing action, the
machine is programmed to expose each field at a multiplicity of
lower doses. So if a*Eo (a>1) is the required dose at the wafer
to completely expose a single field with a single exposing action,
we expose the field N times at a dose of a*EO/N, where N is some
predetermined number, typically 20. Within these N exposures the
wafer stage is not moved to another field position, a single field
is exposed N times. In the preferred embodiment, this process is
repeated 3 more times for the other fields. The result of this
procedure is to average out the scanning non-repeatability by an
amount proportional to N (parameterized as b*M). The exact
configuration of the resist (novolac, chemically amplified, resist
manufacturer, processing conditions) determines whether b=1 or is
<1.
[0183] If the machine cannot do the desired sub-Eo exposure, then
we can use the lowest exposure dose available and expose enough
fields with this dose so we get the desired averaging effect.
[0184] Then in blocks 3452, 3454, and 3456 the wafer is developed
and the overlay targets and are measured and a lens distortion map
constructed as described above in connection with FIG. 34.
[0185] In another variation of the first two embodiments, multiple
exposing actions are performed to average out the effect of
non-repeatability but now the overlay reticle, for example the
reticle of FIG. 20, has a partially reflecting dielectric coating
either on it's non-chrome or possibly chrome coated (machine
optical object plane) surface see FIG. 20C. For example, a 95%
reflecting dielectric coating applied to the overlay reticle means
that if there are 20 exposure sequences, at a dose of Eo each, the
net effect is to expose the wafer with a dose of 2*Eo and to have
effectively averaged over as many as 20 exposures. The advantage of
this technique is that it is not limited by the machine's ability
to do sub-Eo exposures. A further advantage of this technique is
that since the exposure doses can be made at the same dose as used
in production runs, the dynamics of the scanner movement during the
measurement sequence will be the same and therefore the intra-field
error measured under identical operating conditions. Thus, if the
production dose is a*Eo, the overlay reticle has a coating that
reflects a fraction R of light incident on it, then the number of
exposures (N) required to get a dose of b*Eo on the measurement
wafer is:
N=1+floor(b/(a*(1-R)) (eq 43)
[0186] and
[0187] floor(x)=integer part of the real number x.
[0188] As a typical example, a production run at 4*Eo (a=4), using
an overlay reticle that is 98% reflecting (R=0.98) and requiring a
dose on the measurement wafers of 2*Eo (b=2) means the number of
required exposures is (eq 43) N=26 resulting in effectively
averaging over as many as 26 realizations of the intra-field
distortion. Furthermore, even though the exposure dose was set at
the production dose (4*Eo), the dose at the wafer was sub-Eo (less
than Eo) because it is equal to (1-R)*4*Eo=0.08*Eo or 8% of Eo.
Although this embodiment was described with respect to a partially
reflecting reticle, the considerations are similar if the overlay
reticle is absorbing or attenuated. An attenuated phase shift mask
is well suited for this purpose. See The Attenuated Phase Shift
Mask, B. Lin. Instead of reflecting; all that is required is a
reticle with a decreased optical transmission from normal. To be
useful, the reticle typically needs an optical transmission (1-R
for a reflective mechanism) of <50% of normal or nominal.
[0189] The techniques described above has been mainly described
with respect to alignment attributes that are in the form of a box
in box or frame in frame pattern as shown in FIG. 14. Other
alignment attributes such as gratings. See U.S. Pat. No.
6,079,256--Overlay Alignment Measurement of Wafter, supra, and FIG.
1b, wafer alignment marks See Matching Management of multiple wafer
steppers using a stable standard and a matching simulator, supra,
van der Pauw resistors. See Automated Electrical Measurements of
Registration Errors in Step and Repeat Optical Lithography systems,
supra, vernier pairs; See Method of Measuring Bias and Edge overlay
error for sub 0.5 micron Ground Rules, C. Ausschnitt, et. Al., U.S.
Pat. No. 5,757,507, 1998, capacitor structures. See Capacitor
Circuit Structor For Determining Overlay Error, supra could be used
instead. In general, any alignment attribute that can be used by an
overlay metrology tool for measuring offsets can be utilized by the
techniques described.
[0190] The overlay metrology tool utilized in the techniques
described is typically a conventional optical overlay tool such as
those manufactured by KLA-Tencor. See KLA 5105 overlay brochure,
supra; 5200 overlay brochure, supra or Bio-Rad Semiconductor
Systems; See Quaestor Q7 Brochure, supra. Other optical overlay
tools can also be used by, for example, those described in Process
for measuring overlay misregistration during semiconductor wafer
fabrication, I. Mazor, et Al., U.S. Pat. No. 5,438,413 1995 or
Overlay Alignment Measurement of Wafers, supra. In addition, some
steppers or scanners. See Matching Management of multiple wafer
steppers using a stable standard and a matching simulator, supra
can utilize their wafer alignment systems and wafer stages to
function as overlay tools. However, in this role the total size of
the alignment attribute is usually limited, (consisting of 2 wafer
alignment marks) to a distance over which the wafer stage would be
as accurate as a conventional optical overlay tool. This distance
is typically <0.5 mm. When electrical alignment attributes are
used for overlay. See Matching Management of multiple wafer
steppers using a stable standard and a matching simulator, supra;
Automated Electrical Measurements of Registration Errors in Step
and Repeat Optical Lithography systems, supra; See Capacitor
Circuit Structor For Determining Overlay Error, supra, the overlay
metrology tool as utilized by this invention would correspond to
the electrical equipment utilized for making the corresponding
measurement.
[0191] The techniques has been mainly described with respect to
it's application on the projection imaging tools such as
photolithographic stepper systems See Direct-referencing automatic
two-points reticle-to-wafter alignment using a projection column
servo system, supra; New 0.54 Aperture I-Line Wafer Stepper With
Field by Field Leveling Combined with Global Alignment, M. Van den
Brink, B. Katz, S. Wittekoek, SPIE Vol. 1463, 709:724, 1991;
Projection optical system for use in precise copy, T. Sato, et.
Al., U.S. Pat. No. 4,861,148, 1989, and photolithographic scanners
systems. See Micrascan (TM). III performance of a third generation,
catadioptric step and scan lithographic tool, D. Cote, et. Al.,
SPIE Vol. 3051, 806:816, 1997; ArF Step And Scan Exposure System
For 0.15 Micron and 0.13 micron Technology Node, J. Mulkens, et.
Al., SPIE Conference on Optical Microlithography XII, 506:521,
March, 1999; 0.7 NA DUV step and Scan system for 150 nm Imaging
with Improved Overlay, supra]) most commonly used in semiconductor
manufacturing today. The techniques can be applied to other
projection imaging tools such as contact or proximity printers. See
Optical Lithography--Thirty years and three orders of magnitude,
supra, 2-dimensional scanners; See Large-area, High-throughout,
High-Resolution Projection Imaging System, K. Jain, U.S. Pat. No.
5,285,236, 1994, Optical Lithography--Thirty years and three orders
of magnitude, supra, office copy machines, and next generation
lithography (ngl) systems such as XUV. See Development of XUV
projection lithography at 60-80 nm, supra, SCALPEL, EUV (Extreme
Ultra Violet); See Reduction imaging at 14 nm using
multilayer-coated optics: Printing of features smaller than 0.1
micron ef 53, supra, IPL (Ion Projection Lithography), and EPL
(electron projection lithography). See Mix-And-Match: A necessary
Choice, supra. In addition, the techniques can be applied to a
lithographic projection system used in an electron beam imaging
system, or a direct write tool, or an x-ray imaging system.
[0192] The reticle of the present invention is typically glass with
openings defined in a chrome coating. This is common for projection
lithography tools utilized in semiconductor manufacture. The form
the reticle can take will be determined by the format required by
the specific projection lithography tool on which the reticle is
loaded.
[0193] The techniques have been mainly described with respect to
the recording medium being positive photoresist. The technique
could equally well have used negative photoresist providing
appropriate adjustment to the box in box structures on the reticle
are made. In general, the recording medium is whatever is typically
used on the lithographic projection tool being measuring. Thus, on
an EPL tool, an electron beam resist such as PMMA could be utilized
as the recording medium.
[0194] So far, the substrates on which the recording media is
placed have been described as semi conductor surfaces or silicon
wafers. This will be the case in semiconductor manufacture. The
exact form of the substrate will be dictated by the projection
lithography tool and its' use in a specific manufacturing
environment. For example, in a flat panel manufacturing facility,
the substrate on which the photoresist would be placed would be a
glass plate or panel. A projection imaging tool used in mask making
would utilize a reticle, or a photolithographic mask, as the
substrate. In addition, the substrate may be an electronic
recording media, or an optically sensitive material, such as an
electronic CCD, a diode array, or a liquid crystal material.
Circuit boards or multi-chip module carriers are other possible
substrates.
[0195] The overlay measurement and lens distortion algorithm can
also be integrated directly into the exposure alignment systems of
most stepper and scanner systems. For example, this could be in the
form of an electronic sensing array embedded in the wafer chuck
that would serve as both substrate and recording medium.
[0196] The present invention has been described above in terms of a
presently preferred embodiment so that an understanding of the
present invention can be conveyed. There are, however, many
configurations for ownership interest award techniques not
specifically described herein but with which the present invention
is applicable. The present invention should therefore not be seen
as limited to the particular embodiments described herein, but
rather, it should be understood that the present invention has wide
applicability with respect to ownership interest award techniques
generally. All modifications, variations, or equivalent
arrangements and implementations that are within the scope of the
attached claims should therefore be considered within the scope of
the invention.
* * * * *