U.S. patent application number 10/290994 was filed with the patent office on 2003-04-03 for panel stacking of bga devices to form three-dimensional modules.
Invention is credited to Isaak, Harlan R..
Application Number | 20030064548 10/290994 |
Document ID | / |
Family ID | 24395181 |
Filed Date | 2003-04-03 |
United States Patent
Application |
20030064548 |
Kind Code |
A1 |
Isaak, Harlan R. |
April 3, 2003 |
Panel stacking of BGA devices to form three-dimensional modules
Abstract
A chip stack comprising at least two base layers, each of which
includes a base substrate and a first conductive pattern disposed
on the base substrate. The chip stack further comprises at least
one interconnect frame having a second conductive pattern disposed
thereon. The interconnect frame is disposed between the base
layers, with the second conductive pattern being electrically
connected to the first conductive pattern of each of the base
layers. Also included in the chip stack are at least two integrated
circuit chips which are electrically connected to respective ones
of the first conductive patterns. One of the integrated circuit
chips is at least partially circumvented by the interconnect frame
and at least partially covered by one of the base layers. The chip
stack further comprises a transposer layer comprising a transposer
substrate having a third conductive pattern disposed thereon. The
first conductive pattern of one of the base layers is electrically
connected to the third conductive pattern of the transposer
layer.
Inventors: |
Isaak, Harlan R.; (Costa
Mesa, CA) |
Correspondence
Address: |
STETINA BRUNDA GARRED & BRUCKER
75 ENTERPRISE, SUITE 250
ALISO VIEJO
CA
92656
US
|
Family ID: |
24395181 |
Appl. No.: |
10/290994 |
Filed: |
November 8, 2002 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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10290994 |
Nov 8, 2002 |
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09922977 |
Aug 6, 2001 |
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09922977 |
Aug 6, 2001 |
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09598343 |
Jun 21, 2000 |
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6404043 |
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Current U.S.
Class: |
438/108 ;
257/E25.013 |
Current CPC
Class: |
H05K 3/368 20130101;
H01L 2225/06572 20130101; H05K 2201/10378 20130101; H01L 2224/16
20130101; H05K 1/141 20130101; H01L 2225/06517 20130101; H01L
2225/0652 20130101; H05K 1/144 20130101; H01L 2924/01078 20130101;
H01L 2924/01079 20130101; H01L 2225/06541 20130101; H05K 2201/10515
20130101; H05K 2201/10674 20130101; H05K 3/3436 20130101; H05K
2201/2018 20130101; H01L 2924/01087 20130101; H01L 2225/06586
20130101; H01L 25/0657 20130101 |
Class at
Publication: |
438/108 |
International
Class: |
H01L 021/44; H01L
021/48; H01L 021/50 |
Claims
1. A chip stack comprising: at least two base layers, each of the
base layers comprising: a base substrate; and a first conductive
pattern disposed on the base substrate; a least one interconnect
frame having a second conductive pattern disposed thereon, the
interconnect frame being disposed between the base layers, with the
second conductive pattern being electrically connected to the first
conductive pattern of each of the base layers; and at least two
integrated circuit chips electrically connected to respective ones
of the first conductive patterns, one of the integrated circuit
chips being at least partially circumvented by the interconnect
frame and at least partially covered by one of the base layers.
2. A chip stack of claim 1 further comprising: a transposer layer
comprising: a transposer substrate; and a third conductive pattern
disposed on the transposer substrate; the first conductive pattern
of one of the base layers being electrically connected to the third
conductive pattern.
3. The chip stack of claim 2 wherein: the base substrate defines
opposed top and bottom surfaces; and the first conductive pattern
comprises: a first set of base pads disposed on the top surface of
the base substrate; a second set of base pads disposed on the top
surface of the base substrate and electrically connected to
respective ones of the base pads of the first set; and a third set
of base pads disposed on the bottom surface of the base substrate
and electrically connected to respective ones of the base pads of
the second set; the integrated circuit chips being disposed upon
respective ones of the top surfaces of the base substrates and
electrically connected to at least some of the base pads of
respective ones of the first sets, with the base pads of the second
set of one of the base layers being electrically connected to the
second conductive pattern, and the base pads of the third set of
one of the base layers being electrically connected to the second
conductive pattern.
4. The chip stack of claim 3 wherein: the interconnect frame
defines opposed top and bottom surfaces; and the second conductive
pattern comprises: a first set of frame pads disposed on the top
surface of the interconnect frame; and a second set of frame pads
disposed on the bottom surface of the interconnect frame and
electrically connected to respective ones of the frame pads of the
first set; the interconnect frame being disposed between the base
layers such that the frame pads of the second set are electrically
connected to respective ones of the base pads of the second set of
one of the base layers, and the frame pads of the first set are
electrically connected to respective ones of the base pads of the
third set of one of the base layers.
5. The chip stack of claim 4 wherein: the transposer substrate
defines opposed top and bottom surfaces; and the third conductive
pattern comprises: a first set of transposer pads disposed on the
top surface of the transposer substrate; and a second set of
transposer pads disposed on the bottom surface of the transposer
substrate and electrically connected to respective ones of the
transposer pads of the first set; the base pads of the third set of
one of the base layers being electrically connected to respective
ones of the transposer pads of the first set.
6. The chip stack of claim 5 wherein the transposer pads of the
first set, the frame pads of the first and second sets, and the
base pads of the second and third sets are arranged in identical
patterns.
7. The chip stack of claim 6 wherein: the transposer and base
substrates each have a generally rectangular configuration defining
opposed pairs of longitudinal and lateral peripheral edge segments;
the interconnect frame has a generally rectangular configuration
defining opposed pairs of longitudinal and lateral side sections;
the transposer pads of the first set extend along the longitudinal
and lateral peripheral edge segments of the transposer substrate;
the first and second sets of frame pads extend along the
longitudinal and lateral side sections of the interconnect frame;
and the second and third sets of base pads extend along the
longitudinal and lateral peripheral edge segments of the base
substrate.
8. The chip stack of claim 6 wherein each of the transposer pads of
the second set has a generally spherical configuration.
9. The chip stack of claim 6 wherein each of the transposer pads of
the first set and each of the frame pads of the first and second
sets has a generally semi-spherical configuration.
10. The chip stack of claim 6 wherein: each of the frame pads of
the first set is electrically connected to a respective one of the
frame pads of the second set via a frame feed-through hole; and
each of the base pads of the second set is electrically connected
to a respective one of the base pads of the third set via a base
feed-through hole.
11. The chip stack of claim 10 wherein each of the frame and base
feed-through holes is plugged with a conductive material.
12. The chip stack of claim 11 wherein the conductive material is
selected from the group consisting of: nickel; gold; tin; silver
epoxy; and combinations thereof.
13. The chip stack of claim 6 wherein the integrated circuit chips
each comprise: a body having opposed, generally planar top and
bottom surfaces; and a plurality of conductive contacts disposed on
the bottom surface of the body; the conductive contacts of each of
the integrated circuit chips being electrically connected to
respective ones of the base pads of the first set of a respective
one of the first conductive patterns.
14. The chip stack of claim 13 wherein the transposer pads of the
second set, the base pads of the first set, and the conductive
contacts are arranged in identical patterns.
15. The chip stack of claim 13 further comprising a layer of
flux/underfill disposed between the bottom surface of the body of
each of the integrated circuit chips and respective ones of the top
surfaces of the base substrates.
16. The chip stack of claim 13 wherein the body of each of the
integrated circuit chips and the interconnect frame are sized
relative to each other such that the top surface of the body of the
integrated circuit chip at least partially circumvented by the
interconnect frame does not protrude beyond the top surface
thereof.
17. The chip stack of claim 13 wherein the integrated circuit chips
are each selected from the group consisting of: a BGA device; a
fine pitch BGA device; a CSP device; and a flip chip device.
18. The chip stack of claim 2 wherein the transposer and base
substrates are each fabricated from a polyamide.
19. The chip stack of claim 1 further comprising: a second
interconnect frame, the second conductive pattern of which is
electrically connected to the first conductive pattern of one of
the base layers such that the second interconnect frame at least
partially circumvents one the integrated circuit chips; a third
base layer, the first conductive pattern of which is electrically
connected to the second conductive pattern of the second
interconnect frame such that the third base layer at least
partially covers one of the integrated circuit chips; and a third
integrated circuit chip electrically connected to the first
conductive pattern of the third base layer.
20. The chip stack of claim 19 further comprising: a multiplicity
of additional interconnect frames, base layers, and integrated
circuit chips; the second conductive pattern of each of the
interconnect frames being electrically connected to the first
conductive patterns of any adjacent pair of base layers, with each
of the integrated circuit chips being electrically connected to the
first conductive pattern of a respective one of the base
layers.
21. A method of assembling a chip stack, comprising the steps of:
(a) electrically connecting an integrated circuit chip to a first
conductive pattern of a base layer; (b) electrically connecting a
second conductive pattern of an interconnect frame to the first
conductive pattern such the interconnect frame at least partially
circumvents the integrated circuit chip; (c) electrically
connecting another integrated circuit chip to the first conductive
pattern of another base layer; and (d) electrically connecting the
first conductive pattern of one of the base layers to the second
conductive pattern of the interconnect frame such that one of the
integrated circuit chips is disposed between the base layers.
22. The method of claim 21 further comprising the step of: (e)
electrically connecting the first conductive pattern of one of the
base layers to a third conductive pattern of a transposer
layer.
23. The method of claim 21 wherein steps (a) and (c) each comprise
applying a layer of flux/underfill to each of the base layers over
portions of the first conductive patterns prior to the electrical
connection of respective ones of the integrated circuit chips
thereto.
24. The method of claim 22 wherein steps (a)-(e) are accomplished
via soldering.
25. A method of assembling a chip stack, comprising the steps of:
(a) providing a transposer panel which has opposed surfaces and a
plurality of conductive pads disposed on the opposed surfaces
thereof; (b) providing at least two base panels which each have
opposed surfaces and a plurality of conductive pads disposed on the
opposed surfaces thereof; (c) providing at least one frame panel
which has opposed surfaces and a plurality of conductive pads
disposed on the opposed surfaces thereof; (d) providing a plurality
of integrated circuit chips which each have opposed sides and a
plurality of conductive contacts disposed on one of the sides
thereof; (e) placing integrated circuit chips upon each of the base
panels such that the conductive contacts of each of the integrated
circuit chips are disposed on at least some of the conductive pads
of respective ones of the base panels; (f) stacking one of the base
panels upon the transposer panel such that at least some of the
conductive pads of the base panel are disposed on at least some of
the conductive pads of the transposer panel; (g) stacking the frame
panel upon the base panel such that at least some of the conductive
pads of the frame panel are disposed on at least some of the
conductive pads of the base panel; and (h) stacking another base
panel upon the frame panel such that at least some of the
conductive pads of the base panel are disposed on at least some of
the conductive pads of the frame panel.
26. The method of claim 25 wherein steps (g) and (h) are repeated
at least once subsequent to step (h).
27. The method of claim 25 further comprising the step of: (i)
bonding the conductive contacts of the integrated circuit chips to
at least some of the conductive pads of the base panel upon which
the integrated circuit chips are positioned, bonding at least some
of the conductive pads of one of the base panels to at least some
of the conductive pads of the transposer panel, and bonding at
least some of the conductive pads of the frame panel to at least
some of the conductive pads of each of the base panels.
28. The method of claim 25 wherein at least three spacer sheets are
also provided which each have opposed surfaces and a plurality of
openings disposed therein, and: step (f) comprises stacking one of
the spacer sheets upon the transposer panel and stacking the base
panel upon the spacer sheet such that the conductive pads of the
transposer and base panels are aligned with respective ones of the
openings; step (g) comprises stacking another spacer sheet upon the
base panel and stacking the frame panel upon the spacer sheet such
that the conductive pads of the base and frame panels are aligned
with respective ones of the openings; and step (h) comprises
stacking another spacer sheet upon the frame panel and stacking the
base panel upon the spacer sheet such that the conductive pads of
the frame and base panels are aligned with respective ones of the
openings.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] (Not Applicable)
STATEMENT RE: FEDERALLY SPONSORED RESEARCH/DEVELOPMENT
[0002] (Not Applicable)
BACKGROUND OF THE INVENTION
[0003] The present invention relates generally to chip stacks, and
more particularly to a chip stack having connections routed from
the bottom to the perimeter thereof to allow multiple integrated
circuit chips such as BGA devices to be quickly, easily and
inexpensively vertically interconnected in a volumetrically
efficient manner.
[0004] Multiple techniques are currently employed in the prior art
to increase memory capacity on a printed circuit board. Such
techniques include the use of larger memory chips, if available,
and increasing the size of the circuit board for purposes of
allowing the same to accommodate more memory devices or chips. In
another technique, vertical plug-in boards are used to increase the
height of the circuit board to allow the same to accommodate
additional memory devices or chips.
[0005] Perhaps one of the most commonly used techniques to increase
memory capacity is the stacking of memory devices into a vertical
chip stack, sometimes referred to as 3D packaging or Z-Stacking. In
the Z-Stacking process, from two (2) to as many as eight (8) memory
devices or other integrated circuit (IC) chips are interconnected
in a single component (i.e., chip stack) which is mountable to the
"footprint" typically used for a single package device such as a
packaged chip. The Z-Stacking process has been found to be
volumetrically efficient, with packaged chips in TSOP (thin small
outline package) or LCC (leadless chip carrier) form generally
being considered to be the easiest to use in relation thereto.
Though bare dies or chips may also be used in the Z-Stacking
process, such use tends to make the stacking process more complex
and not well suited to automation.
[0006] In the Z-Stacking process, the IC chips or packaged chips
must, in addition to being formed into a stack, be electrically
interconnected to each other in a desired manner. There is known in
the prior art various different arrangements and techniques for
electrically interconnecting the IC chips or packaged chips within
a stack. Examples of such arrangements and techniques are disclosed
in Applicant's U.S. Pat. No. 4,956,694 entitled INTEGRATED CIRCUIT
CHIP STACKING issued Sep. 11, 1990, U.S. Pat. No. 5,612,570
entitled CHIP STACK AND METHOD OF MAKING SAME issued Mar. 18, 1997,
and U.S. Pat. No. 5,869,353 entitled MODULAR PANEL STACKING PROCESS
issued Feb. 9, 1999.
[0007] The various arrangements and techniques described in these
issued patents and other currently pending patent applications of
Applicant have been found to provide chip stacks which are
relatively easy and inexpensive to manufacture, and are well suited
for use in a multitude of differing applications. The present
invention provides yet a further alternative arrangement and
technique for forming a volumetrically efficient chip stack. In the
chip stack of the present invention, connections are routed from
the bottom of the chip stack to the perimeter thereof so that
interconnections can be made vertically which allows multiple
integrated circuit chips such as BGA, CSP, fine pitch BGA, or flip
chip devices to be stacked in a manner providing the potential for
significant increases in the production rate of the chip stack and
resultant reductions in the cost thereof.
BRIEF SUMMARY OF THE INVENTION
[0008] In accordance with the present invention, there is provided
a chip stack comprising at least two base layers (i.e., an upper
base layer and a lower base layer). Each of the base layers
includes a base substrate having a first conductive pattern
disposed thereon. The chip stack further comprises at least one
interconnect frame having a second conductive pattern disposed
thereon. The interconnect frame is disposed between the upper and
lower base layers, with the second conductive pattern being
electrically connected to the first conductive pattern of each of
the base layers. In addition to the base layers and interconnect
frame, the chip stack comprises at least two integrated circuit
chips which are electrically connected to respective ones of the
first conductive patterns. The integrated circuit chip electrically
connected to the first conductive pattern of the lower base layer
is at least partially circumvented by the interconnect frame and at
least partially covered by the upper base layer. The chip stack
further preferably comprises a transposer layer which includes a
transposer substrate having a third conductive pattern disposed
thereon. The first conductive pattern of the lower base layer is
electrically connected to the third conductive pattern of the
transposer layer.
[0009] In the present chip stack, the base substrate of each of the
base layers defines opposed, generally planar top and bottom
surfaces. The first conductive pattern itself comprises first and
second sets of base pads which are disposed on the top surface of
the base substrate, with the base pads of the second set being
electrically connected to respective ones of the base pads of the
first set via conductive traces. In addition to the first and
second sets of base pads, the first conductive pattern includes a
third set of base pads disposed on the bottom surface of the base
substrate and electrically connected to respective ones of the base
pads of the second set. More particularly, each of the base pads of
the second set is preferably electrically connected to a respective
one of the base pads of the third set via a base feed-through hole.
The base feed-through hole is preferably plugged with a conductive
material selected from the group consisting of nickel, gold, tin,
silver epoxy, and combinations thereof. The integrated circuit
chips are disposed upon respective ones of the top surfaces of the
base substrates and electrically connected to at least some of the
base pads of respective ones of the first sets. Additionally, the
base pads of the second set of the lower base layer are
electrically connected to the second conductive pattern of the
interconnect frame, as are the base pads of the third set of the
upper base layer.
[0010] The interconnect frame of the chip stack itself defines
opposed, generally planar top and bottom surfaces, with the second
conductive pattern comprising first and second sets of frame pads
disposed on respective ones of the top and bottom surfaces. Each of
the frame pads of the first set is electrically connected to a
respective one of the frame pads of the second set via a frame
feed-through hole which is also plugged with a conductive material
preferably selected from the group consisting of nickel, gold, tin,
silver epoxy, and combinations thereof. The interconnect frame is
preferably disposed between the upper and lower base layers such
that the frame pads of the second set are electrically connected to
respective ones of the base pads of the second set of the lower
base layer, with the frame pads of the first set being electrically
connected to respective ones of the base pads of the third set of
the upper base layer.
[0011] The transposer substrate of the present chip stack also
defines opposed, generally planar top and bottom surfaces, with the
third conductive pattern comprising first and second sets of
transposer pads disposed on respective ones of the top and bottom
surface of the transposer substrate. The transposer pads of the
first set are electrically connected to respective ones of the
transposer pads of the second set. Additionally, the base pads of
the third set of the lower base layer are electrically connected to
respective ones of the transposer pads of the first set.
[0012] In the present chip stack, the transposer pads of the first
set, the frame pads of the first and second sets, and the base pads
of the second and third sets are preferably arranged identical
patterns. Additionally, the transposer and base substrates each
preferably have a generally rectangular configuration defining
opposed pairs of longitudinal and lateral peripheral edge segments.
The interconnect frame itself preferably has a generally
rectangular configuration defining opposed pairs of longitudinal
and lateral side sections. The transposer pads of the first set
extend along the longitudinal and lateral peripheral edge segments
of the transposer substrate. Similarly, the first and second sets
of frame pads extend along the longitudinal and lateral side
sections of the interconnect frame, with the second and third sets
of base pads extending along the longitudinal and lateral
peripheral edge segments of the base substrate. Each of the
transposer pads of the second set preferably has a generally
spherical configuration, with each of the transposer pads of the
first set and each of the frame pads of the first and second sets
preferably having a generally semi-spherical configuration.
[0013] Each of the integrated circuit chips of the present chip
stack preferably comprises a body having opposed, generally planar
top and bottom surfaces, and a plurality of conductive contacts
disposed on the bottom surface of the body. The conductive contacts
of each of the integrated circuit chips are electrically connected
to respective ones of the base pads of the first set of a
respective one of the first conductive patterns. The transposer
pads of the second set, the base pads of the first set, and the
conductive contacts are themselves preferably arranged in identical
patterns. The chip stack further preferably comprises a layer of
flux/underfill (also referred to as a "no flow-fluxing underfill")
disposed between the bottom surface of the body of each of the
integrated circuit chips and respective ones of the top surfaces of
the base substrates. Each layer of flux/underfill is preferably
spread over the base pads of the first set of a respective one of
the first conductive patterns. The body of each of the integrated
circuit chips and the interconnect frame are preferably sized
relative to each other such that the top surface of the body of the
integrated circuit chip electrically connected to the lower base
panel and at least partially circumvented by the interconnect frame
does not protrude beyond the top surface thereof. The integrated
circuit chips are preferably selected from the group consisting of
a BGA device, a fine pitch BGA device, a CSP device, and a flip
chip device. Further, the transposer and base substrates are each
preferably fabricated from a polyamide or other suitable circuit
board material which may be as thin as about 0.010 inches.
[0014] Those of ordinary skill in the art will recognize that a
chip stack of the present invention may be assembled to include
more than two base layers, more than one interconnect frame, and
more than two integrated circuit chips. In this respect, a
multiplicity of additional interconnect frames, base layers, and
integrated circuit chips may be included in the chip stack, with
the second conductive pattern of each of the interconnect frames
being electrically connected to the first conductive patterns of
any adjacent pair of base layers, and each of the integrated
circuit chips being electrically connected to the first conductive
pattern of a respective one of the base layers.
[0015] Further in accordance with the present invention, there is
provided a method of assembling a chip stack. The method comprises
the initial step of electrically connecting an integrated circuit
chip to a first conductive pattern of a base layer. Thereafter, a
second conductive pattern of an interconnect frame is electrically
connected to the first conductive pattern such that the
interconnect frame at least partially circumvents the integrated
circuit chip. Another integrated circuit chip is then electrically
connected to the first conductive pattern of another base layer.
The first conductive pattern of one of the base layers is then
electrically connected to the second conductive pattern of the
interconnect frame such that one of the integrated circuit chips is
disposed between the base layers. The method may further comprise
the step of electrically connecting the first conductive pattern of
one of the base layers to a third conductive pattern of a
transposer layer. In the present assembly method, a layer of
flux/underfill is preferably applied to (i.e., spread over) each of
the base layers over portions of the first conductive patterns
prior to the electrical connection of respective ones of the
integrated circuit chips thereto. All of the electrical connections
in the present assembly method are preferably accomplished via
soldering.
[0016] Still further in accordance with the present invention,
there is provided a method of assembling a chip stack which
comprises the initial steps of providing a transposer panel, at
least two base panels, and at least one frame panel which each have
opposed surfaces and a plurality of conductive pads disposed on the
opposed surfaces thereof. A plurality of integrated circuit chips
are also provided which each have opposed sides and include
conductive contacts disposed on one of the sides thereof. In this
assembly method, integrated circuit chips are placed upon each of
the base panels such that the conductive contacts of each of the
integrated circuit chips are disposed on at least some of the
conductive pads of respective ones of the base panels. Thereafter,
one of the base panels is stacked upon the transposer panel such
that at least some of the conductive pads of the base panel are
disposed on at least some of the conductive pads of the transposer
panel. The frame panel is then stacked upon the base panel such
that at least some of the conductive pads of the frame panel are
disposed on at least some of the conductive pads of the base panel.
Another base panel is then stacked upon the frame panel such that
at least some of the conductive pads of the base panel are disposed
on at least some of the conductive of the frame panel.
[0017] The assembly method further comprises bonding the conductive
contacts of the integrated circuit chips to at least some of the
conductive pads of the base panel upon which the integrated circuit
chips are positioned, bonding at least some of the conductive pads
of one of the base panels to at least some of the conductive pads
of the transposer panel, and bonding at least some of the
conductive pads of the frame panel to at least some of the
conductive pads of each of the base panels. The assembly method may
further comprise the steps of stacking spacer sheets between one of
the base panels and the transposer panel, and between the frame
panel and each of the base panels. The spacer sheets each have
opposed surfaces and a plurality of openings disposed therein. When
stacked between the base and transposer panels and between the
frame and base panels, the openings of the spacer sheets are
aligned with the conductive pads of such panels.
BRIEF DESCRIPTION OF THE DRAWINGS
[0018] These, as well as other features of the present invention,
will become more apparent upon reference to the drawings
wherein:
[0019] FIG. 1 is a top perspective view of a chip stack constructed
in accordance with the present invention;
[0020] FIG. 2 is an exploded view of the chip stack shown in FIG.
1;
[0021] FIG. 3 is an exploded view of the various components which
are stacked upon each other in accordance with a preferred method
of assembling the chip stack of the present invention;
[0022] FIG. 4 is a partial cross-sectional view of the components
shown in FIG. 3 as stacked upon each other prior to a solder reflow
step of the present assembly method;
[0023] FIG. 4a is an enlargement of the encircled region 4a shown
in FIG. 4;
[0024] FIG. 5 is partial cross-sectional view similar to FIG. 4
illustrating the components shown in FIG. 3 as stacked upon each
other subsequent to the completion of the solder reflow step of the
present assembly method; and
[0025] FIG. 5a is an enlargement of the encircled region 5a shown
in FIG. 5.
DETAILED DESCRIPTION OF THE INVENTION
[0026] Referring now to the drawings wherein the showings are for
purposes of illustrating a preferred embodiment of the present
invention only, and not for purposes of limiting the same, FIG. 1
perspectively illustrates a chip stack 10 assembled in accordance
with the present invention. The chip stack 10 comprises at least
two identically configured base layers 12. Each of the base layers
12 itself comprises a rectangularly configured base substrate 14
which defines a generally planar top surface 16, a generally planar
bottom surface 18, an opposed pair of longitudinal peripheral edge
segments 20, and an opposed pair of lateral peripheral edge
segments 22.
[0027] Disposed on the base substrate 14 of each base layer 12 is a
first conductive pattern which itself preferably comprises a first
set of base pads 24 and a second set-of base pads 26 which are each
disposed on the top surface 16 of the base substrate 14. The base
pads 24 of the first set are preferably arranged in a generally
rectangular pattern or array in the central portion of the base
substrate 14, with the base pads 26 of the second set extending
linearly along the longitudinal and lateral peripheral edge
segments 20, 22 of the base substrate 14. The base pads 24 of the
first set are electrically connected to respective ones of the base
pads 26 of the second set via conductive traces 28. In addition to
the base pads 24, 26 of the first and second sets, the first
conductive pattern of each base layer 12 comprises a third set of
base pads 30 which is disposed on the bottom surface 18 of the base
substrate 14. The base pads 30 of the third set are preferably
arranged in an identical pattern to the base pads 26 of the second
set, and extend linearly along the longitudinal and lateral
peripheral edge segments 20, 22 of the base substrate 14 such that
each of the base pads 30 of the third set is aligned with and
electrically connected to a respective one of the base pads 26 of
the second set.
[0028] As is best seen in FIGS. 3-5, each of the base pads 26 of
the second set is electrically connected to a respective one of the
base pads 30 of the third set via a base feed-through hole 32. Each
base feed-through hole 32 is preferably plugged with a conductive
material. The conductive material is preferably selected from the
group consisting of nickel, gold, tin, silver epoxy, and
combinations thereof. The base pads 26, 30 of the second and third
sets, as well as the base pads 24 of the first set, each preferably
have a generally circular configuration. In this respect, each base
feed-through hole 32 preferably extends axially between each
corresponding, coaxially aligned pair of the base pads 26, 30 of
the second and third sets. The base pads 26, 30 of the second and
third sets are preferably formed upon (i.e., surface plated to) the
base substrate 14 subsequent to the plugging of the base
feed-through holes 32 and are used to cover the opposed, open ends
thereof. If the base feedthrough holes 32 were left unplugged,
solder coming into contact with the base pads 26, 30 of the second
and third sets would tend to wick into the base feed-through holes
32 upon the reflow of the solder (which will be discussed below),
thus robbing the base pads 26, 30 of solder needed to facilitate
various electrical connections in the chip stack 10.
[0029] In addition to the base layers 12, the chip stack 10 of the
present invention comprises at least one rectangularly configured
interconnect frame 34. The interconnect frame 34 defines a
generally planar top surface 36, a generally planar bottom surface
38, an opposed pair of longitudinal side sections 40, and an
opposed pair of lateral side sections 42. Disposed on the
interconnect frame 34 is a second conductive pattern which itself
preferably comprises a first set of frame pads 44 disposed on the
top surface 36, and a second set of frame pads 46 disposed on the
bottom surface 38. The frame pads 44, 46 of the first and second
sets are preferably arranged in patterns which are identical to
each other, and to the patterns of the second and third sets of
base pads 26, 30 of each of the base layers 12. In this respect,
the frame pads 44, 46 of the first and second sets each extend
linearly along the longitudinal and lateral side sections 40, 42 of
the interconnect frame 34, with each of the frame pads 44 of the
first set being aligned with and electrically connected to a
respective one of the frame pads 46 of the second set. As best seen
in FIGS. 4(a) and 5(a), similar to the electrical connection of the
base pads 26, 30 of the second and third sets to each other, the
electrical connection of each of the frame pads 44 of the first set
to a respective one of the frame pads 46 of the second set is
preferably accomplished via a frame feedthrough hole 48 which is
also preferably plugged with a conductive material. The conductive
material is preferably selected from the same group used as the
conductive material to plug the base feed-through holes 32, i.e.,
nickel, gold, tin, silver epoxy, and combinations thereof. Each of
the frame feed-through holes 48 preferably extends axially between
a corresponding, coaxially aligned pair of the frame pads 44, 46 of
the first and second sets, with the plugging of the frame
feed-through holes 48 preferably occurring prior to the surface
plating of the frame pads 44, 46 of the first and second sets to
respective ones of the top and bottom surfaces 36, 38 of the
interconnect frame 34.
[0030] In the preferred embodiment, the interconnect frame 34 is
preferably prepared for use in the chip stack 10 by forming
generally semi-spherically shaped solder bumps 50 on each of the
frame pads 44, 46 of the first and second sets. These solder bumps
50 are preferably formed by first stenciling solder paste onto the
frame pads 44, 46 of the first and second sets, and thereafter
reflowing the solder paste to form the solder bumps 50. The use of
a six mil thick stencil with an aperture approximately the same
size as each of the frame pads 44, 46 will facilitate the formation
of a solder bump 50 approximately six mils high. As indicated
above, the frame pads 44, 46 of the first and second sets are
formed (i.e., surface plated) subsequent to the frame feed-through
holes 48 being plugged with the conductive material. If the frame
feed-through holes 48 were left unplugged, each frame feed-through
hole 48 could trap flux or air which would blow out the solder
during the reflow cycle used to form the solder bumps 50 on each
corresponding, coaxially aligned pair of frame pads 44, 46 of the
first and second sets.
[0031] In the chip stack 10, the interconnect frame 34 is disposed
between the base layers 12, with the second conductive pattern of
the interconnect frame 34 being electrically connected to the first
conductive pattern of each of the base layers 12. More
particularly, the frame pads 46 of the second set are electrically
connected to respective ones of the base pads 26 of the second set
of one of the base layers 12 (i.e., the base layer 12 immediately
below the interconnect frame 34 in the chip stack 10) , with the
frame pads 44 of the first set being electrically connected to
respective ones of the base pads 30 of the third set of one of the
base layers 12 (i.e., the base layer 12 immediately above the
interconnect frame 34 in the chip stack 10). Due to the base pads
26, 30 of the second and third sets and the frame pads 44, 46 of
the first and second sets all being arranged in identical patterns,
each coaxially aligned pair of frame pads 44, 46 of the first and
second sets is itself coaxially aligned with a coaxially aligned
set of base pads 26, 30 of the second and third sets of each of the
adjacent base layers 12. The electrical connection of the second
conductive pattern of the interconnect frame 34 to the first
conductive pattern of each of the adjacent base layers 12 is
preferably facilitated via a soldering process which will be
described in more detail below.
[0032] The chip stack 10 of the present invention further
preferably comprises a transposer layer 52. The transposer layer 52
itself comprises a rectangularly configured transposer substrate 54
which defines a generally planar top surface 56, a generally planar
bottom surface 58, an opposed pair of longitudinal peripheral edge
segments 60, and an opposed pair of lateral peripheral edge
segments 62. Disposed on the transposer substrate 54 is a third
conductive pattern. The third conductive pattern comprises a first
set of transposer pads 64 which are disposed on the top surface 56
of the transposer substrate 54, and a second set of transposer pads
66 which are disposed on the bottom surface 58 thereof. The
transposer pads 64 of the first set are electrically connected to
respective ones of the transposer pads 66 of the second set via
conductive traces. The transposer pads 64 of the first set are
preferably arranged in a pattern which is identical to the patterns
of the second and third sets of base pads 26, 30 and the first and
second sets of frame pads 44, 46. In this respect, the transposer
pads 64 of the first set extend linearly along the longitudinal and
lateral peripheral edge segments 60, 62 of the transposer substrate
54. The transposer pads 66 of the second set are themselves
preferably arranged in a generally rectangular pattern or array in
the central portion of the bottom surface 58 of the transposer
substrate 54, with the pattern of the transposer pads 66 of the
second set preferably being identical to the pattern of the base
pads 24 of the first set of each of the base layers 12.
[0033] In the preferred embodiment, the transposer layer 52 is
prepared for use in the chip stack 10 by forming generally
spherically shaped solder balls 68 on each of the transposer pads
66 of the second set. These solder balls 68 are preferably formed
by stencil printing solder paste onto each of the transposer pads
66 of the second set, and thereafter reflowing the solder paste to
form the solder balls 68. The aperture in the stencil used to form
the solder balls 68 is typically larger than each of the transposer
pads 66 and thick enough to deposit sufficient solder to form the
solder balls 68. As seen in FIG. 3, the transposer layer 52 is also
prepared for use in the chip stack 10 by forming generally
semi-spherically shaped solder bumps 67 on each of the transposer
pads 64 of the first set. These solder bumps 67 are preferably
formed in the same manner previously described in relation to the
formation of the solder bumps 50 on the frame pads 44, 46 of the
first and second sets.
[0034] In the chip stack 10, the first conductive pattern of one of
the base layers 12 (i.e., the lowermost base layer 12 in the chip
stack 10) is electrically connected to the third conductive pattern
of the transposer layer 52. More particularly, each of the base
pads 30 of the third set of the lowermost base, layer 12 is
electrically connected to a respective one of the transposer pads
64 of the first set. Due to the base pads 30 of the third set and
the transposer pads 64 of the first set being arranged in identical
patterns, each of the base pads 30 of third set is coaxially
alignable with a respective one of the transposer pads 64 of the
first set, with the electrical connection therebetween preferably
being facilitated via soldering as will be discussed in more detail
below.
[0035] In the present chip stack 10, the base pads 24, 26, 30 of
the first, second and third sets, the conductive traces 28, the
frame pads 44, 46 of the first and second sets, and the transposer
pads 64, 66 of the first and second sets are each preferably
fabricated from very thin copper having a thickness in the range of
from about five microns to about twenty-five microns through the
use of conventional etching techniques. Advantageously, the use of
thin copper for the various pads and traces 28 allows for etching
line widths and spacings down to a pitch of about 4 mils which
substantially increases the routing density on each of the base
layers 12, as well as the transposer layer 52. Additionally, the
base substrate 14, the interconnect frame 34, and the transposer
substrate 54 are each preferably fabricated from either FR-4,
polyamide, or some other suitable material which can easily be
routed. As indicated above, all of the base feed-through holes 32
and frame feed-through holes 48 are plugged with a conductive
material prior to the surface plating procedure used to form the
base pads 24, 26, 30 of the first, second and third sets, and the
frame pads 44, 46 of the first and second sets. The material used
to form each base substrate 14 and/or the transposer substrate 54
may be as thin as about 0.010 inches or may be a thicker multilayer
structure.
[0036] The chip stack 10 of the present invention further comprises
at least two identically configured integrated circuit chips 70
which are electrically connected to respective ones of the first
conductive patterns of the base layers 12. Each of the integrated
circuit chips 70 preferably comprises a rectangularly configured
body 72 defining a generally planar top surface 74, a generally
planar bottom surface 76, an opposed pair of longitudinal sides 78,
and an opposed pair of lateral sides 80. Disposed on the bottom
surface 76 of the body 72 are a plurality of generally spherically
shaped conductive contacts 82 which are preferably arranged in a
pattern identical to the patterns of the base pads 24 of the first
set and the transposer pads 66 of the second set. The conductive
contacts 82 of each of the integrated circuit chips 70 are
electrically connected to respective ones of the base pads 24 of
the first set of a respective one of the first conductive patterns
of the base layers 12. Due to the conductive contacts 82 and base
pads 24 of each of the first sets being arranged in identical
patterns, the conductive contacts 82 of each of the integrated
circuit chips 70 are coaxially alignable with respective ones of
the base pads 24 of the corresponding first set. In each of the
integrated circuit chips 70, solder is preferably pre-applied to
each of the conductive contacts 82 thereof. The electrical
connection of the conductive contacts 82 of each integrated circuit
chip 70 to respective ones of the base pads 24 of the first set of
a respective one of the first conductive patterns is preferably
accomplished via soldering in a manner which will be discussed in
more detail below. Additionally, each of the integrated circuit
chips 70 is preferably a BGA (ball grid array) device, though the
same may alternatively comprise either a CSP device or a flip chip
device.
[0037] In the present chip stack 10, a layer 84 of flux/underfill
is preferably disposed between the bottom surface 76 of the body 72
of each of the integrated circuit chips 70 and respective ones of
the top surfaces 16 of the base substrates 14. Each layer 84 of the
flux/underfill is preferably spread over the base pads 24 of the
first set of a respective one of the first conductive patterns of
the base layers 12. Each layer 84 substantially encapsulates the
conductive contacts 82 of the corresponding integrated circuit chip
70 when the same is electrically connected to the first conductive
pattern of a respective one of the base layers 12.
[0038] Prior to the attachment of the integrated circuit chip 70 to
a respective base layer 12, a bakeout cycle is required to drive
out the moisture in the base layer 12 and the corresponding
integrated circuit chip 70. A cycle of approximately eight hours at
about 125.degree. Celsius is desirable, which is followed by
storage in a dry nitrogen atmosphere until use. The first step in
the attachment of the integrated circuit chip 70 to the
corresponding base layer 12 is the precise deposition of the layer
84 of an appropriate flux/underfill material over the base pads 24
of the corresponding first set. The integrated circuit chip 70 is
then placed over the pad area, squeezing out the flux/underfill
material of the layer 84 to the longitudinal and lateral sides 78,
80 of the body 72 and seating the conductive contacts 82 onto
respective ones of the base pads 24 of the corresponding first set.
If done properly, the layer 84 of the flux/underfill material, when
cured, will have no voids or minimum voids. The base layer 12
having the integrated circuit chip 70 positioned thereupon in the
above-described manner is then run through a solder reflow cycle
with no dwelling time at an intermediate temperature of
approximately 150.degree. Celsius. A post cure cycle to complete
the polymerization of the layer 84 of the flux/underfill material
may be required depending on the particular flux/underfill material
used in the layer 84. At this juncture, the base layer 12 having
the integrated circuit chip 70 electrically connected thereto may
be electrically tested.
[0039] In the prior art, the standard approach for the attachment
or electrical connection of the conductive contacts of a BGA device
to an attachment or pad site is to first flux the pad site or
conductive contacts of the BGA device, place the BGA device on the
pad site in the proper orientation, reflow the solder pre-applied
to the conductive contacts of the BGA device to facilitate the
electrical connection to the pad site, clean, then underfill and
cure. The cleaning step typically requires considerable time since
the gap under the bottom surface of the body of the BGA device is
very small and very difficult to penetrate with standard cleaning
methods. Also, the removal of the cleaning fluid (which is
generally water) requires long bakeout times.
[0040] The underfill of an epoxy between the bottom surface of the
body of the BGA device and the top surface of the substrate having
the pad site thereon is a relatively easy procedure, but is very
slow. If a no-clean flux is used for attachment, the residue from
the flux typically becomes entrapped within the epoxy underfill and
may cause corrosion problems. A subsequent solder reflow process to
facilitate the attachment of the chip stack to a main printed
circuit board (PCB) often causes the residue flux to vaporize which
exerts pressure on the solder joints and could delaminate the
structure. Most underfill materials become very hard (i.e., greater
than ninety shore D) and are cured at a temperature of less than
about 180.degree. Celsius. The solder is solid at this temperature
and the underfill encases the solder with no room for expansion.
The solder from the conductive contacts of the BGA device expands
when molten again, thus exerting pressure which can delaminate the
structure. If the chip stack is not subjected to subsequent reflow
temperatures when completed, there is no problem. However, the chip
stack must be able to withstand the subsequent reflow
temperature.
[0041] The flux/underfill material used for the layer 84 provides
both flux and underfill properties with one formulation. As the
temperature rises during the solder reflow process which will be
discussed below, the flux characteristics of the material aid in
the solder process, with extended exposure to the peak solder
reflow temperature beginning the polymerization process of the
underfill portion of the material. The flux is incorporated into
the underfill, thus becoming one compatible material which is cured
above the melting point of solder. Thus, there is room within the
encased solder for expansion at the reflow temperature. No cleaning
steps are required, though careful dispensing of the correct volume
and accurate placement of the integrated circuit chip 70 upon its
corresponding base layer 12 is critical.
[0042] The complete chip stack 10 shown in FIG. 1 includes a
transposer layer 52, four base layers 12, three interconnect frames
34, and four integrated circuit chips 70. The first conductive
pattern of the lowermost base layer 12 is electrically connected to
the third conductive pattern of the transposer layer 52 in the
above-described manner. Additionally, each of the interconnect
frames 34 is disposed or positioned between an adjacent pair of
base layers 12, with the second conductive pattern of each of the
interconnect frames 34 being electrically connected to the first
conductive pattern of such adjacent pair of base layers 12 in the
above-described manner. Since the conductive contacts 82 of each of
the integrated circuit chips 70 are electrically connected to
respective ones of the base pads 24 of the first set of respective
ones of the first conductive patterns, the integrated circuit chips
70 other than for the uppermost integrated circuit chip 70 are
disposed between adjacent pairs of the base layers 12 and are each
circumvented by a respective one of the interconnect frames 34.
Thus, the bodies 72 of the integrated circuit chips 70 and the
interconnect frames 34 are preferably sized relative to each other
such that the top surface 74 of the body 72 of an integrated
circuit chip 70 which is circumvented by an interconnect frame 34
does not protrude beyond the top surface 36 thereof.
[0043] As also indicated above, all the various electrical
connections within the chip stack 10 are preferably facilitated via
soldering. The transposer pads 66 of the second set, which are
spherically shaped as indicated above, form a ball grid array on
the bottom of the chip stack 10 which is specifically suited for
facilitating the attachment of the chip stack 10 to a printed
circuit board (PCB). Those of ordinary skill in the art will
recognize that the chip stack 10 may be assembled to include fewer
or greater than four base layers 12, three interconnect frames 34,
and four integrated circuit chips 70.
[0044] Having thus described the structural attributes of the chip
stack 10, the preferred method of assembling the same will now be
described with specific reference to FIGS. 3, 4, 4(a), 5 and 5(a).
In accordance with the present invention, multiple chip stacks 10
may be concurrently assembled through the use of a transposer panel
86, at least two base panels 88, at least one frame panel 90, at
least three spacer sheets 92, and a plurality of integrated circuit
chips 70. The transposer panel 86 is formed to include multiple
groups of the first and second sets of transposer pads 64, 66 with
such groups being formed on the transposer panel 86 in spaced
relation to each other. Similarly, each of the base panels 88 is
formed to include multiple groups of the first, second and third
sets of base pads 24, 26, 30, with the frame panels 90 each being
formed to include multiple groups of the first and second sets of
frame pads 44, 46. As indicated above, the transposer panel 86 is
prepared such that the transposer pads 64 of the first set of each
group have the solder bumps 67 formed thereon, with the transposer
pads 66 of the second set of each group having the solder balls 68
formed thereon. Similarly, each of the frame panels 90 is prepared
such that the first and second sets of frame pads 44, 46 of each
group have the solder bumps 50 formed thereon. The spacer sheets 92
are each formed to define a plurality of rectangularly configured
openings 94, the length and width dimensions of which exceed those
of the base and transposer substrates 14, 54 and interconnect
frames 34 which are substantially equal to each other.
[0045] In a preferred assembly process, the integrated circuit
chips 70 are electrically connected to respective ones of each of
the first sets of base pads 24 included on each of the base panels
88. Such electrical connection is accomplished in the
above-described manner. Subsequent to the pre-attachment of the
integrated circuit chips 70 to the base panels 88, flux/underfill
material is dispensed onto each of the solder bumps 67 of the
transposer panel 86, with the flux/underfill material also being
dispensed onto all of the solder bumps 50 of each of the frame
panels 90. The transposer panel is then cooperatively engaged to a
stacking fixture such that the solder balls 68 face or are directed
downwardly. A spacer sheet 92 is then stacked upon the transposer
panel 86 such that the transposer pads 64 of the first set of each
group are aligned with respective ones of the openings 94 within
the spacer sheet 92. A base panel 88 is then stacked upon the
spacer sheet 92 such that the base pads 30 of the third set of each
group face or are directed downwardly and are aligned with
respective ones of the openings 94 and respective ones of the
transposer pads 64 of the first set of the corresponding group upon
the transposer panel 86 immediately therebelow. Another spacer
sheet 92 is then stacked upon the base panel 88 such that the base
pads 24, 26 of the first and second sets of each group are aligned
with respective ones of the openings 94.
[0046] In the next step of the assembly process, a frame panel 90
is stacked upon the uppermost spacer sheet 92 such that the bodies
72 of the integrated circuit chips 70 are each circumvented by the
frame panel 90. Another spacer sheet 92 is then stacked upon the
frame panel 90 such that the frame pads 44 of the first set of each
group are aligned with respective ones of the openings 94. Another
base panel 88 is then stacked upon the uppermost spacer sheet 92 in
a manner wherein the base pads 30 of the third set of each group of
such uppermost base panel 88 are aligned with respective ones of
the openings 94 and respective ones of the frame pads 44 of the
first set of the corresponding group upon the frame panel 90
immediately therebelow. As will be recognized, the above-described
stacking process may be continued or repeated to form a chip stack
having a greater number of electrically interconnected integrated
circuit chips 70.
[0047] Upon the stacking of the various panels and sheets in the
above-described manner, a pressure plate is applied to the top of
the stack to maintain such panels and sheets in prescribed
orientations relative to each other. The stacked panels and sheets
are then subjected to heat at a level sufficient to facilitate the
reflow of the solder bumps 50, 67. The solder reflow cycle is
typically conducted in a temperature range of from about
215.degree. Celsius to about 250.degree. Celsius. Upon the
completion of solder reflow process, the individual chip stacks are
separated through the use of a router.
[0048] In the preferred assembly method as discussed above, the
spacer sheets 92 are needed only for the solder reflow process, and
do not become part of each resultant chip stack formed by the
completion of the routing process. The solder bumps 50, 67 are
slightly higher than each spacer sheet 92. Since light pressure is
applied to the various panels and sheets during the solder reflow
process, the solder bumps 50, 67 collapse, thus making the
appropriate electrical connections to the corresponding pads (i.e.,
the base pads 26, 30 of either the second or third sets). Thus, the
spacer sheets 92 keep the solder from being squeezed out and
bridging to neighboring pads. A spacing of from about four mils to
about six mils can be accomplished using spacer sheets 92 which are
fabricated from paper. The paper can be easily punched to form the
openings 94, does not interfere with the routing process, can
withstand the solder reflow temperature in the aforementioned
range, and is inexpensive. The paper spacer sheets 92 would be
sized the same as the transposer, base and frame panels 86, 88, 90,
and punched to include openings 94 which are slightly larger than
the finished, routed chip stack. With slight pressure being applied
to the stacked panels and sheets, the space between the panels and
sheets is easily maintained, thus eliminating the necessity to
remove the spacer sheets 92 subsequent to the reflow of the solder.
As indicated above, the paper spacer sheets 92 would not interfere
with the routing process, and would be removed with the rest of the
debris.
[0049] The present assembly method has high volume potential, with
the use of the flux/underfill material providing localized
encapsulation of the conductive contacts 82 of the integrated
circuit chips 70 and eliminating the need for a cleaning cycle as
discussed above. Those of ordinary skill in the art will recognize
that a transposer panel 86 need not necessarily be included in the
assembly process, since the lowermost base layer 12 in any chip
stack may be used as a transposer board to facilitate the mounting
or electrical connection of the chip stack to a PCB. In the
completed chip stack, the solder joints between each of the
integrated circuit chips 70 and the corresponding base layer 12 are
protected by the flux/underfill material.
[0050] Additional modifications and improvements of the present
invention may also be apparent to those of ordinary skill in the
art. Thus, the particular combination of parts and steps described
and illustrated herein is intended to represent only one embodiment
of the present invention, and is not intended to serve as
limitations of alternative devices and methods within the spirit
and scope of the invention.
* * * * *