U.S. patent application number 10/117918 was filed with the patent office on 2002-10-03 for sensor for measuring a substrate temperature.
This patent application is currently assigned to Applied Materials, Inc.. Invention is credited to Adams, Bruce, Hunter, Aaron, O'Brien, Paul A., Rubinchik, Alex, Yam, Mark.
Application Number | 20020139790 10/117918 |
Document ID | / |
Family ID | 22443808 |
Filed Date | 2002-10-03 |
United States Patent
Application |
20020139790 |
Kind Code |
A1 |
Adams, Bruce ; et
al. |
October 3, 2002 |
Sensor for measuring a substrate temperature
Abstract
A temperature sensor for measuring a temperature of a substrate
in a thermal processing chamber is described. The chamber includes
a reflector forming a reflecting cavity with a substrate when the
substrate is positioned in the chamber. The temperature sensor
includes a probe having an input end positioned to receive
radiation from the reflecting cavity, and a detector optically
coupled to an output end of the probe. The radiation entering the
probe includes reflected radiation and non-reflected radiation. The
detector measures an intensity of a first portion of the radiation
entering the probe to generate a first intensity signal and
measures an intensity of a second portion of the radiation entering
the probe to generate a second intensity signal. The detector is
configured so that a ratio of the reflected radiation to the
non-reflected radiation is higher in the first portion than the
second portion. The two intensity signals are used to calculate the
temperature and emissivity of the substrate.
Inventors: |
Adams, Bruce; (Portland,
OR) ; Hunter, Aaron; (Santa Cruz, CA) ;
Rubinchik, Alex; (San Jose, CA) ; Yam, Mark;
(San Jose, CA) ; O'Brien, Paul A.; (San Jose,
CA) |
Correspondence
Address: |
PENNIE & EDMONDS LLP
1155 Avenue of the Americas
New York
NY
10036-2711
US
|
Assignee: |
Applied Materials, Inc.
|
Family ID: |
22443808 |
Appl. No.: |
10/117918 |
Filed: |
April 5, 2002 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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10117918 |
Apr 5, 2002 |
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09756945 |
Jan 8, 2001 |
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6406179 |
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09756945 |
Jan 8, 2001 |
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09130253 |
Aug 6, 1998 |
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6183130 |
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09130253 |
Aug 6, 1998 |
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09026855 |
Feb 20, 1998 |
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6007241 |
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09130253 |
Aug 6, 1998 |
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09044217 |
Mar 18, 1998 |
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6179466 |
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Current U.S.
Class: |
219/390 ;
219/411 |
Current CPC
Class: |
G01J 5/0818 20130101;
G01J 5/0821 20130101; G01J 5/0802 20220101; G01J 5/08 20130101;
G01J 5/0808 20220101; G01J 5/0846 20130101; G01J 5/046 20130101;
G01J 5/0007 20130101; G01J 5/0815 20130101; G01J 5/0003 20130101;
G01J 5/80 20220101; G01J 5/0806 20130101; G01J 5/04 20130101 |
Class at
Publication: |
219/390 ;
219/411 |
International
Class: |
F27D 011/00; F27B
005/14 |
Claims
What is claimed is:
1. A temperature sensor for measuring a temperature of a substrate
in a thermal processing chamber, the chamber including a reflector
forming a reflecting cavity with a substrate when the substrate is
positioned in the chamber, the temperature sensor comprising: a
probe having an input end positioned to receive radiation from the
reflecting cavity, wherein the radiation entering the probe
includes reflected radiation and non-reflected radiation; and a
detector optically coupled to an output end of the probe, wherein
the detector measures an intensity of a first portion of the
radiation entering the probe to generate a first intensity signal
and measures an intensity of a second portion of the radiation
entering the probe to generate a second intensity signal, the
detector being configured so that a ratio of the reflected
radiation to the non-reflected radiation is higher in the first
portion than the second portion.
2. The temperature sensor of claim 1, further comprising a
processor coupled to the detector to calculate a substrate
temperature from the first and second intensity signals.
3. The temperature sensor of claim 2, wherein the processor is
configured to calculate a substrate emissivity from the first and
second intensity signals.
4. The temperature sensor of claim 1, wherein the detector is
configured so that the second portion of radiation includes a
greater proportion of radiation which enters the probe with an axis
of propagation within an angle of an axis normal to the reflector
than the first portion of radiation.
5. The apparatus of claim 4, wherein the angle is between about 0
and 10 degrees.
6. The apparatus of claim 1, wherein the detector includes a first
detector surface and a second detector surface, and the first
portion of the radiation impinges the first detector surface and
the second portion of the radiation impinges the second detector
surface.
7. The temperature sensor of claim 6, wherein the detector is
configured to preferentially direct radiation that enters the probe
with an axis of propagation within an angle of an axis normal to
the reflector to the second detector surface.
8. The temperature sensor of claim 6, wherein the detector is
configured to preferentially direct radiation that enters the probe
with an axis of propagation outside an angle of an axis normal to
the reflector to the first detector surface.
9. The temperature sensor of claim 6, wherein the detector is
configured to prevent a portion of the radiation that enters the
probe with an axis of propagation within an angle of an axis normal
to the reflector from impinging on the first detector surface.
10. The temperature sensor of claim 6, wherein the detector is
configured to prevent a portion of the radiation that enters the
probe with an axis of propagation outside an angle of an axis
normal to the reflector from impinging on the second detector
surface.
11. The temperature sensor of claim 6, wherein the detector
includes a reflective surface positioned to divide the radiation
from the probe into a first beam that is directed to the first
detector surface and a second beam that is directed to the second
detector surface.
12. The temperature sensor of claim 11, wherein the detector
includes a pyrometer filter positioned an optical path between the
probe and the reflective surface.
13. The temperature sensor of claim 11, wherein the reflective
surface is positioned in a central region of an optical path of the
radiation entering the probe, and a ratio of reflected radiation to
non-reflected radiation is lower in the central region than in an
outer region of the optical path surrounding the central
region.
14. The temperature sensor of claim 11, wherein the reflective
surface is partially reflective and partially transparent, and the
radiation reflected by the reflective surface forms one of the
first and second beams and radiation transmitted by the reflective
surface forms the other of the first and second beams.
15. The temperature sensor of claim 14, wherein the first beam
includes a central region and an outer region, the central region
containing a higher proportion of radiation which enters the probe
with an axis of propagation within an angle of an axis normal to
the reflector than the outer region, and the detector includes an
opaque optical element positioned in the outer portion.
16. The temperature sensor of claim 14, wherein the second beam
includes a central region and an outer region, the central region
containing a higher proportion of radiation which enters the probe
with an axis of propagation within an angle of an axis normal to
the reflector than the outer region, and the detector includes an
opaque optical element positioned in the inner portion.
17. The temperature sensor of claim 1, wherein an optical path of
the radiation from the probe includes a central region and an outer
region, the central region containing a higher proportion of
radiation which enters the probe with an axis of propagation within
an angle of an axis normal to the reflector than the outer
region.
18. The temperature sensor of claim 17, wherein the detector
includes an array of photosensitive elements, and radiation from
the central region of the optical path impinges a central region of
the array and radiation from the outer region of the optical path
impinges an outer region of the array, and the detector includes
circuitry configured to use signals from the photosensitive
elements located in the outer region to generate the first
intensity signal and signals from the photosensitive elements
located in the inner region to generate the second intensity
signal.
19. The temperature sensor of claim 17, wherein the detector
includes a first detector surface positioned to receive the central
portion of the radiation and a second detector surface positioned
to receive the outer portion of the radiation.
20. The temperature sensor of claim 19, wherein the first detector
surface is substantially annular in shape and surrounds the second
detector surface.
21. The temperature sensor of claim 17, wherein the detector
includes a split optical fiber having a first branch and a second
branch, the split optical fiber configured so that the outer
portion of the radiation enters the first branch to form a first
beam and the central portion of the radiation enters the second
branch to form a second beam.
22. A temperature sensor for measuring a temperature of a substrate
in a thermal processing chamber, the chamber including a reflector
forming a reflecting cavity with a substrate when the substrate is
positioned in the chamber, the temperature sensor comprising: a
probe having an input end positioned to receive radiation from the
reflecting cavity, wherein radiation entering the probe includes
reflected radiation and non-reflected radiation, and wherein
radiation exiting an output end of the probe includes a central
portion and an outer portion; a reflective surface positioned to
divide the radiation from the output end of the probe into a first
beam containing the outer portion of the radiation and a second
beam containing the central portion of the radiation, whereby a
ratio of the reflected radiation to the non-reflected radiation is
higher in the first beam than the second beam; a first detector to
measure an intensity of the first beam to generate a first
intensity signal; and a second detector to measure an intensity of
the second beam and generate a second intensity signal.
23. An apparatus for measuring the temperature of a substrate in a
thermal processing chamber, comprising: a reflector located to form
a reflecting cavity with a substrate when the substrate is
positioned in the chamber; a temperature sensor including a probe
and a detector, the probe having an input end positioned to receive
radiation from the reflecting cavity and an output end optically
coupled to the detector, wherein the detector measures an intensity
of a first portion of the radiation entering the probe to generate
a first intensity signal and measures an intensity of a second
portion of the radiation entering the probe to generate a second
intensity signal, and wherein the radiation entering the probe
includes reflected radiation and non-reflected radiation and the
temperature sensor is configured so that a ratio of the reflected
radiation to the non-reflected radiation is higher in the first
portion than the second portion; and a processor coupled to the
detector to calculate a substrate temperature from the first and
second intensity signals.
24. An apparatus for measuring the temperature of a substrate in a
thermal processing chamber, comprising: a reflector located to form
a reflecting cavity with a substrate when the substrate is
positioned in the chamber; a temperature sensor including a probe
having an input end positioned to receive radiation from the
reflecting cavity, the radiation entering the probe including
reflected radiation and non-reflected radiation; means for
directing a first portion of the radiation from an output end of
the probe to a first detector and directing a second portion of the
radiation from the output end of the probe to a second detector,
wherein directing means is configured so that a ratio of reflected
radiation to non-reflected radiation is higher in the first portion
than the second portion; and a processor coupled to the first and
second detectors to calculate a substrate temperature from a first
intensity signal from the first detector and a second intensity
signal from the second detector.
25. An apparatus, comprising: a reflective collimator having an
input aperture to receive radiation from a probe; a reflective
concentrator having an input aperture positioned to receive
radiation from an output aperture of the reflective collimator; a
filter positioned between the output aperture of the reflective
collimator and the input aperture of the reflective concentrator; a
first detector positioned to receive radiation from an output
aperture of the reflective concentrator and generate a first
intensity signal; a second detector to generate a second intensity
signal; and a reflective surface positioned in the optical path of
the radiation passing through the reflective concentrator to direct
a portion of the radiation to the second detector.
26. The detector of claim 25, further comprising a processor
connected to the first and second detectors to determine a
temperature measurement from the first and second intensity
signals.
27. The detector of claim 25, wherein the collimator is a
.theta..sub.in/.theta..sub.out device.
28. The detector of claim 25, wherein the concentrator is a
.theta..sub.in/.theta..sub.out device.
29. A method of measuring the temperature of a substrate in a
thermal processing chamber, comprising: positioning a substrate in
a thermal processing chamber to form a reflecting cavity with a
reflector located in the chamber; sampling radiation from the
cavity with a probe and directing the sampled radiation to a
detector, the sampled radiation including reflected and
non-reflected radiation; generating a first intensity signal for a
first portion of the sampled radiation with the detector;
generating a second intensity signal for a second portion of the
sample radiation with the detector, wherein a ratio of the
non-reflected radiation to the reflected radiation is higher in the
first portion than the second portion; and determining a
temperature of the substrate from the first and second intensity
signals.
30. The method of claim 29, further comprising determining an
emissivity of the substrate from the first and second intensity
signals.
31. The method of claim 29, wherein the detector includes a first
detector surface positioned to receive the first portion of the
radiation and a second detector surface positioned to receive the
second portion of the radiation.
32. The method of claim 31, further comprising dividing the
radiation into a first beam which is directed to the first detector
surface and a second beam which is directed to the second detector
surface.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] The present application is a continuation-in-part of U.S.
application Ser. No. 09/026,855, filed Feb. 20, 1998, and a
continuation-in-part of U.S. application Ser. No. 09/044,217, filed
Mar. 18, 1998, each of which are incorporated herein in their
entirety.
BACKGROUND
[0002] The present invention relates to a temperature sensor for
measuring a substrate temperature during thermal processing.
[0003] In rapid thermal processing (RTP), a substrate is heated
quickly and uniformly to a high temperature, such as 400.degree.
Celsius (C.) or more, to perform a fabrication step such as
annealing, cleaning, chemical vapor deposition, oxidation, or
nitration. For example, a thermal processing system, such as the
RTP tool available from Applied Materials, Inc., under the trade
name "Centura.RTM.", may be used to perform metal annealing at
temperatures of 400.degree. C. to 500.degree. C., titanium silicide
formation at temperatures around 650.degree. C., or oxidation or
implant annealing at temperatures around 1000.degree. C.
[0004] The temperature of the substrate must be precisely
controlled during these thermal processing steps to obtain high
yields and process reliability, particularly given the submicron
dimension of current semiconductor devices. For example, to
fabricate a dielectric layer 60-80 angstroms (.ANG.) thick with a
uniformity of .+-.2 .ANG., a typical requirement in current device
structures, the temperature in successive processing runs cannot
vary by more than a few .degree. C. from the target temperature. To
achieve this level of temperature control, the temperature of the
substrate is measured in real time and in situ.
[0005] Optical pyrometry is a technology that is used to measure
substrate temperatures in RTP systems. Pyrometry exploits a general
property of objects, namely, that objects emit radiation with a
particular spectral content and intensity that is characteristic of
their temperature. Thus, by measuring the emitted radiation, the
object's temperature can be determined. A pyrometer measures the
emitted radiation intensity and performs the appropriate conversion
to obtain the substrate temperature. The relationship between
spectral intensity and temperature depends on the spectral
emissivity of the substrate and the ideal blackbody
intensity-temperature relationship, given by Planck's law: 1 I b (
, T ) = 2 C 1 5 ( e c 2 T - 1 ) ( 1 )
[0006] where C.sub.1 and C.sub.2 are known constants, .lambda. is
the radiation wavelength of interest, and T is the substrate
temperature measured in .degree. K. The spectral emissivity
.epsilon.(.lambda., T) of an object is the ratio of its emitted
spectral intensity I(.lambda., T) to that of a black body at the
same temperature I.sub.B(.lambda., T). That is, 2 ( , T ) = I ( , T
) I b ( , T ) ( 2 )
[0007] Since C.sub.1 and C.sub.2 are known constants, under ideal
conditions, the temperature of the substrate can be accurately
determined if .epsilon.(.lambda., T) is known.
[0008] The emissivity of a substrate depends on many factors,
including the characteristics of the wafer itself (e.g.,
temperature, surface roughness, doping level of various impurities,
material composition and thickness of surface layers), the
characteristics of the process chamber, and the process history of
the wafer. Therefore, a priori estimation of substrate emissivity
cannot provide a general purpose pyrometric temperature measurement
capability. Consequently, the emissivity of the substrate needs to
be measured in situ. Furthermore, any uncertainty in the measured
emissivity introduces an uncertainty into the temperature
measurement.
[0009] To reduce this uncertainty, several techniques have been
developed for reducing the effect of substrate emissivity on the
temperature measurement. One such technique involves placing a
reflector plate beneath the back surface of a target substrate to
form a reflecting cavity. If the reflector plate were an ideal
reflector, it can be shown that because all of the radiation
emitted from the substrate would be reflected back to the
substrate, the reflecting cavity would act as an ideal black body.
That is, the intensity of the radiation within the reflecting
cavity would not be a function of the emissivity of the surface of
the substrate. Thus, in the ideal case, the reflecting cavity
increases the effective emissivity of the substrate to a value
equal to one.
[0010] However, because the reflector plate is not an ideal
reflector, the effective emissivity of the substrate will be less
than one, although it will be higher than the substrate's actual
emissivity. Therefore, the radiation intensity measured by a
temperature sensor will still depend upon the emissivity of the
substrate. Consequently, although variations in the actual
emissivity of the substrate will have less impact on the measured
temperature, there will be uncertainty in the temperature
measurement.
[0011] Moreover, different portions of the substrate may have
different emissivities. Consequently, if the emissivity of the
substrate is measured in only one region, there will be uncertainty
in the temperature measurements of other regions of the
substrate.
[0012] In addition, the transparency of the substrate contributes
to the uncertainty in the temperature measurement. A portion of the
radiation intended to heat the substrate may instead pass through
the substrate into the pyrometer. Since the pyrometer includes this
transmitted radiation in the measured intensity, the transmitted
radiation results in an artificially high temperature measurement.
Assuming that the substrate is a silicon wafer and the pyrometer is
sensitive to infrared radiation, this problem will be more acute at
lower processing temperatures (e.g., less than 600.degree. C.),
where the transmitivity of silicon to infrared radiation is
higher.
[0013] Another source of uncertainty is electrical noise. If only a
small amount of light enters the pyrometer, the signal-to-noise
ratio will be low, and the electrical noise will create uncertainty
in the temperature measurement.
[0014] Another problem is that there are many thermal processing
steps which are not compatible with a highly reflective reflector
plate. For example, certain thermal processing steps may be
corrosive or destructive to such a reflector plate.
[0015] Furthermore, even standard thermal processing may cause the
reflector plate to become dirty or corroded over time, and thus
less reflective. If the reflector plate's reflectivity decreases,
the substrate's effective emissivity also decreases. This change in
the substrate's effective emissivity changes the intensity of the
radiation sampled by the pyrometer, and can create an error in the
measured temperature.
SUMMARY
[0016] In one aspect, the invention is directed to a temperature
sensor for measuring a temperature of a substrate in a thermal
processing chamber, where the chamber includes a reflector forming
a reflecting cavity with a substrate when the substrate is
positioned in the chamber. The temperature sensor includes a probe
having an input end positioned to receive radiation from the
reflecting cavity, and a detector optically coupled to an output
end of the probe. The radiation entering the probe includes
reflected radiation and non-reflected radiation. The detector
measures an intensity of a first portion of the radiation entering
the probe to generate a first intensity signal and measures an
intensity of a second portion of the radiation entering the probe
to generate a second intensity signal. The detector is configured
so that a ratio of the reflected radiation to the non-reflected
radiation is higher in the first portion than the second
portion.
[0017] Implementations of the invention may include the following.
A processor may be coupled to the detector to calculate a substrate
temperature and a substrate emissivity from the first and second
intensity signals. The second portion of radiation may include a
greater proportion of radiation which enters the probe with an axis
of propagation within an angle, e.g., between 0 and 10 degrees, of
an axis normal to the reflector than the first portion of
radiation. The detector may include a first detector surface and a
second detector surface, and the first portion of the radiation may
impinge the first detector surface and the second portion of the
radiation may impinge the second detector surface.
[0018] The detector can be configured to preferentially direct
radiation that enters the probe with an axis of propagation within
an angle of an axis normal to the reflector to the second detector
surface, to preferentially direct radiation that enters the probe
with an axis of propagation outside an angle of an axis normal to
the reflector to the first detector surface, to prevent a portion
of the radiation that enters the probe with an axis of propagation
within an angle of an axis normal to the reflector from impinging
on the first detector surface, or to prevent a portion of the
radiation that enters the probe with an axis of propagation outside
an angle of an axis normal to the reflector from impinging on the
second detector surface.
[0019] The detector may include a reflective surface positioned to
divide the radiation from the probe into a first beam that is
directed to the first detector surface and a second beam that is
directed to the second detector surface. A pyrometer filter may be
positioned in an optical path between the probe and the reflective
surface. The reflective surface may be positioned in a central
region of an optical path of the radiation entering the probe. The
reflective surface may be partially reflective and partially
transparent, and the radiation reflected by the reflective surface
may form one of the first and second beams and radiation
transmitted by the reflective surface may form the other of the
first and second beams. The detector may include an opaque optical
element positioned in the outer region of the second beam, or an
opaque optical element positioned in the inner portion of the first
beam.
[0020] The detector may include an array of photosensitive
elements, and radiation from a central region of the optical path
may impinge a central region of the array and radiation from the
outer region of the optical path may impinge an outer region of the
array. The detector may include circuitry configured to use signals
from the photosensitive elements located in the outer region to
generate the first intensity signal and signals from the
photosensitive elements located in the inner region to generate the
second intensity signal. The detector may include a first detector
surface positioned to receive the central portion of the radiation
and a second detector surface positioned to receive the outer
portion of the radiation. For example, the first detector surface
may be substantially annular in shape and surround the second
detector surface. The detector may include a split optical fiber
having a first branch and a second branch, the split optical fiber
configured so that the outer portion of the radiation enters the
first branch to form a first beam and the central portion of the
radiation enters the second branch to form a second beam.
[0021] In another aspect, the invention is directed to an apparatus
for measuring the temperature of a substrate in a thermal
processing chamber. The apparatus includes a reflector located to
form a reflecting cavity with a substrate when the substrate is
positioned in the chamber, a temperature sensor including a probe
and a detector to generate first and second intensity signals, and
a processor coupled to the detector to calculate a substrate
temperature from the first and second intensity signals. The probe
has an input end positioned to receive radiation from the
reflecting cavity, and an output end optically coupled to the
detector. The detector measures an intensity of a first portion of
the radiation entering the probe to generate the first intensity
signal and measures an intensity of a second portion of the
radiation entering the probe to generate the second intensity
signal. The radiation entering the probe includes reflected
radiation and non-reflected radiation, and the temperature sensor
is configured so that a ratio of the reflected radiation to the
non-reflected radiation is higher in the first portion than the
second portion.
[0022] In another aspect, the invention is directed to an apparatus
for measuring the temperature of a substrate in a thermal
processing chamber. The apparatus includes a reflector located to
form a reflecting cavity with a substrate when the substrate is
positioned in the chamber, a temperature sensor including a probe
having an input end positioned to receive radiation from the
reflecting cavity, means for directing a first portion of the
radiation from an output end of the probe to a first detector and
directing a second portion of the radiation from the output end of
the probe to a second detector, and a processor coupled to the
first and second detectors to calculate a substrate temperature
from a first intensity signal from the first detector and a second
intensity signal from the second detector. The radiation entering
the probe including reflected radiation and non-reflected
radiation, and the directing means is configured so that a ratio of
reflected radiation to non-reflected radiation is higher in the
first portion than the second portion.
[0023] In another aspect, the invention is directed to an apparatus
including a reflective collimator having an input aperture to
receive radiation from a probe, a reflective concentrator having an
input aperture positioned to receive radiation from an output
aperture of the reflective collimator, a filter positioned between
the output aperture of the reflective collimator and the input
aperture of the reflective concentrator, a first detector
positioned to receive radiation from an output aperture of the
reflective concentrator and generate a first intensity signal, a
second detector to generate a second intensity signal, and a
reflective surface positioned in the optical path of the radiation
passing through the reflective concentrator to direct a portion of
the radiation to the second detector.
[0024] Implementations of the invention may include the following.
A processor may be connected to the first and second detectors to
determine a temperature measurement from the first and second
intensity signals. Either or both the collimator and the
concentrator may be a .theta..sub.in/.theta..sub.out device.
[0025] In another aspect, the invention is directed to a method of
measuring the temperature of a substrate in a thermal processing
chamber. In the method, a substrate is positioned in a thermal
processing chamber to form a reflecting cavity with a reflector
located in the chamber. Radiation is sampled from the cavity with a
probe and the sampled radiation is directed to a detector. The
sampled radiation includes reflected and non-reflected radiation. A
first intensity signal is generated for a first portion of the
sampled radiation with the detector, and a second intensity signal
is generated for a second portion of the sampled radiation with the
detector, wherein a ratio of the non-reflected radiation to the
reflected radiation is higher in the first portion than the second
portion. A temperature of the substrate is determined from the
first and second intensity signals.
[0026] Implementations of the invention may include the following.
An emissivity of the substrate may be determined from the first and
second intensity signals. The radiation may be divided into a first
beam which is directed to a first detector surface and a second
beam which is directed to a second detector surface.
[0027] Advantages of the invention may include the following. The
temperature may be calculated using the measured emissivity to
generate a more accurate temperature measurement. Furthermore, the
emissivity measurements may be performed without introducing
additional probes into the processing chamber. The actual
emissivity of the substrate has less effect on the temperature
measured by the temperature sensor. The emissivity of the substrate
may be measured at multiple locations. The effect of radiation
transmitted through the substrate is reduced, and the
signal-to-noise ration is increased, thereby decreasing the
uncertainty in the temperature measurement. A partially reflective
(e.g., as low as 50% reflectivity) reflector plate may be used to
create a virtual black body cavity. This permits the reflector
plate to be made from less expensive materials. It also permits the
reflector plate to be made of materials which are more compatible
with the more destructive or corrosive thermal processes.
[0028] Other features and advantages of the invention will be
apparent from the following description, including the drawings and
the claims.
BRIEF DESCRIPTION OF THE DRAWINGS
[0029] FIG. 1 is a schematic cross-sectional view of a rapid
thermal processing system.
[0030] FIG. 2 is a schematic diagram of a virtual black body cavity
showing ray-traces of light rays entering the temperature
sensor.
[0031] FIG. 3 is a schematic cross-sectional view of a detector
apparatus according to the present invention.
[0032] FIG. 4 is a schematic perspective view of a collimator of
the temperature sensor of FIG. 3.
[0033] FIG. 5 is a flow chart illustrating the steps of calculating
a substrate temperature.
[0034] FIG. 6 is a schematic cross-sectional view of a detector
apparatus including a beam splitter.
[0035] FIG. 7 is a schematic cross-sectional view of a temperature
sensor including a photodetector.
[0036] FIG. 8A is a schematic side view of the internal components
of a pyrometer including a photodetector with an array of
photodiodes.
[0037] FIG. 8B is a view along line 8B-8B of FIG. 8A.
[0038] FIG. 9A is a schematic cross-sectional view of a
photodetector having inner and outer detector elements.
[0039] FIG. 9B is a view along line 9B-9B of FIG. 9A.
[0040] FIG. 10A is a schematic cross-sectional view of a
photodetector having upper and lower detector elements.
[0041] FIG. 10B is a view along line 10B-10B of FIG. 9A.
[0042] FIG. 11 is a schematic view of a temperature sensor using a
split optical fiber.
[0043] FIG. 12 is a schematic view of a temperature sensor using a
split optical fiber and different numerical apertures.
[0044] Like reference numbers are designated in the various
drawings to indicate like elements. A primed reference number
indicates that an element has a modified function, operation or
structure.
DETAILED DESCRIPTION
[0045] In the following description, the term "substrate" broadly
covers any object that is being processed in a thermal processing
chamber. The term "substrate" includes, for example, semiconductor
wafers, flat panel displays, glass plates or disks, and plastic
workpieces.
[0046] Referring to FIG. 1, an RTP system 10 includes a processing
chamber 12 for processing, for example, an eight inch (200 mm) or
twelve inch (300 mm) diameter disk-shaped substrate 14. A
description of such an RTP system may be found in U.S. Pat. No.
5,660,472, the entire disclosure of which is incorporated herein by
reference.
[0047] Substrate 14 is rapidly and evenly heated inside chamber 12
to an elevated temperature (e.g., between about 400 and
1000.degree. C.) and may be subjected to various processing steps
such as annealing, cleaning, chemical vapor deposition, etching,
oxidation, or nitration. Substrate 14 is supported by a rotating
support ring 16 above a reflector 20 that is mounted on a base 26.
The base may be made of stainless steel. A coolant circulates
through passages 28 in base 26 to control the temperature of the
base and the reflector.
[0048] The reflector 20 may include an aluminum body 22 coated with
a partially or highly reflective layer 24. The reflective layer 24
may be formed from a highly reflective material, such as gold or
rhodium. Gold has a reflectivity of about 0.975 in the infrared
wavelength range of interest, i.e., about 900-1000 nanometers (nm),
whereas rhodium has a reflectivity of about 0.8. To further enhance
the reflectivity of the reflector, a quarter-wave stack may be
formed on the gold layer. However, due to the increased effective
emissivity in the embodiments described below, a partially
reflective reflector may be used. For example, the reflectivity of
reflector 20 in the wavelength range of interest may be in the
range of 0.5 to 0.95. This permits other materials, such as nickel,
aluminum or rhodium, to be used for reflective layer 24. In fact,
reflective layer 24 may be eliminated entirely so that the body 22
acts as the reflector. This reduces the cost of reflector 20 and
permits the RTP system to be used in a wider variety of fabrication
processes.
[0049] Substrate 14 is heated by a heating element 30 (e.g., a
water-cooled array of tungsten-halogen lamps). Radiant energy from
heating element 30 passes through a window 32, located directly
above the substrate, to rapidly and uniformly heat the substrate to
an elevated temperature. The heating element and window may be
constructed as described in U.S. Pat. No. 5,155,336, the entire
disclosure of which is incorporated herein by reference. The
underside of substrate 14 and the top of reflector 20 form a
reflecting cavity 34 which makes the substrate appear more like an
ideal black body. That is, the reflector increases the effective
emissivity of the substrate.
[0050] A plurality of temperature sensors or pyrometers 40 (e.g.,
eight, although only three are shown in FIG. 1) are positioned to
measure the substrate's temperature at different substrate radii
during the processing operation. Each temperature sensor 40
includes a probe 42 to sample radiation from the cavity, and a
detector apparatus 50 to measure the intensity of the sampled
radiation and convert the measured intensity into a temperature
measurement.
[0051] Referring to FIG. 2, the input end of probe 42 is located
near (e.g., flush with) the top of reflector 20 to sample radiation
from reflecting cavity 34. The radiation entering probe 42 is made
up of many components, including components emitted directly from
the substrate and reflected components. For example, the radiation
indicated by ray R includes one component emitted directly from the
substrate (from point A) which has experienced no reflections; a
second component (from point B and reflected at point A) which has
experienced one reflection off reflector 20 and the backside of
substrate 12; a third component (from point C and reflected at
points A and B) which has experienced two reflections off reflector
20 and the backside of substrate 12; etc. Thus, the total intensity
I.sub.T of radiation sampled by probe 42 can be found by summing
over an infinite series of components of impinging radiation as
follows: 3 I T = S I b n R n ( 1 - S ) n ( 3 )
[0052] which reduces to (as n goes to infinity): 4 I T = S I b 1 -
R ( 1 - S ) ( 4 )
[0053] where R is the reflectivity of the reflector,
.epsilon..sub.S is the actual emissivity of the substrate, and
I.sub.b is the radiation from an ideal blackbody at the wavelength
range of interest.
[0054] The intensity, I.sub.D, of the radiation emitted directly by
the substrate, i.e., not including any reflected components, would
be given by the following equation:
I.sub.D=.epsilon..sub.SI.sub.b (5)
[0055] where I.sub.b and .epsilon..sub.S have the meanings given
for Equation (4). In contrast, the reflector 20 increases the
effective emissivity, .epsilon..sub.A, of the substrate so
that:
I.sub.T=.epsilon..sub.AI.sub.b (6)
[0056] where 5 A = S 1 - R ( 1 - S ) ( 7 )
[0057] and I.sub.b and .epsilon..sub.S again have the meanings
given for Equation (4). Assuming that the reflectivity of the
reflector is equal to one (R=1), Equation (4) reduces to:
I.sub.T=I.sub.b (8)
[0058] in which the radiation intensity I.sub.T is independent of
emissivity of the backside of the substrate. Thus, in an ideal
system, the sampled radiation intensity I.sub.T could be converted
by the pyrometer into a measured temperature by using Equation
(1).
[0059] Unfortunately, the presence of probe 42 introduces a
localized disturbance in the virtual blackbody effect in reflector
cavity 34. The size of the disturbance tends to increase with
increasing size (D) of the aperture in the reflector which
accommodates the probe. This disturbance counteracts the
emissivity-enhancing effect produced by the reflector. Thus, this
localized disturbance in the virtual blackbody cavity reduces the
effective emissivity of substrate 12 in a region directly above the
probe. In contrast, the effective emissivity of the remainder of
the substrate remains substantially unaffected by the
disturbance.
[0060] Without being limited to any particular theory, one possible
cause of the disturbance is that the probe aperture acts as an
energy sink. The effect may be explained by assuming that the
substrate is perfectly specular and considering the radiation
entering the probe at a specific point (e.g., point P). The portion
of this radiation which enters the probe within an angle .PHI.
consists entirely of radiation emitted directly by the substrate
(e.g., from point A'). This portion does not contain any reflected
components. This is because radiation which would otherwise
constitute one of the reflected components (e.g., radiation from
point B') will enter probe 42 rather than be reflected off
reflector 20. Since the radiation within the angle .PHI. consists
entirely of radiation emitted directly from the substrate, without
any reflections, there is no emissivity-enhancing effect in the
region of the substrate directly above the probe. In short, the
probe itself creates an area where radiation is not reflected, thus
lowering the effective emissivity of the substrate. Although the
localized disturbance is most easily explained for a specular
substrate, the effect also occurs in diffuse substrates.
[0061] As will be described in greater detail below, each
temperature sensor 40 compensates for the fact the reflector is not
perfectly reflective and for the local distortion in the virtual
black body effect caused by the probe. Specifically, the
temperature sensor may make two intensity measurements. One
measurement uses proportionally more reflected radiation and less
direct radiation than the other. That is, the ratio of reflected to
non-reflected radiation is higher in the portion of the radiation
used for the first intensity measurement than in the portion of the
radiation used for the second intensity measurement. The
temperature sensor 40 uses the two intensity measurements to
determine the emissivity and temperature of the substrate.
[0062] The temperature sensor can reduce the amount of
non-reflected light used in one of the intensity measurements by
substantially excluding or ignoring radiation entering the probe
from angles which are nearly normal to the reflector. By either
preventing the radiation within a central angle .alpha. (measured
as an angle between the axis of propagation of the radiation and an
axis normal to reflector) from reaching the photodetector in the
temperature sensor, or by not processing this radiation, the
temperature sensor can use more reflected radiation. Thus, the
substrate has a higher effective emissivity to at least one of the
intensity measurements due to the virtual blackbody cavity effect.
The central angle .alpha. may be about the same as the angle .PHI..
The central angle .alpha. may be between about 0.degree. and
10.degree., such as between about 3.degree. and 8.degree.; e.g., it
may be approximately 5.degree.. Assuming the central angle .alpha.
is fairly small, e.g., less than 10.degree., the radiation within
this angle may be considered to be substantially normal to the
reflector surface. This corresponds to the area of lowered
effective emissivity directly over the probe.
[0063] Referring to FIGS. 1 and 3, the probe may be a light pipe 42
which extends through a conduit 44 from the backside of base 26 and
into an aperture in reflector 20. The light pipe may be a quartz or
sapphire tube about 0.05 to 0.20 inches, e.g., about 4 millimeters,
in diameter. A portion of light pipe 42, e.g., a portion extending
through conduit 44 to detector apparatus 50, may be surrounded by a
protective sheath 45. A mounting bracket 46 having threaded
cylindrical surfaces 47 may be screwed into a threaded receiving
portion of conduit 44 to secure the light pipe and the sheath to
the base. An O-ring 48 may be compressed between protective sheath
45 and base 26 to seal processing chamber 12 from the external
atmosphere.
[0064] The output end of light pipe 42 is optically coupled to
detector apparatus 50. Detector apparatus 50 includes a housing 52
which holds a collimator 54, a pyrometer filter 56, a concentrator
58, two photodetectors, including a primary photodetector 60 and a
secondary photodetector 62, and a reflector 64. The output signals
from the primary and secondary photodetectors are input to
pyrometer electronics 94, such as a programmable microprocessor,
which converts the output signals into a temperature reading. The
temperature reading from pyrometer electronics 94 may be used by a
controller (not shown) to dynamically control the power to heating
element 30 to correct for any deviations from a predefined
temperature cycle.
[0065] An entrance aperture 66 of collimator 54 has the same
diameter and is aligned with the output end of light pipe 42,
whereas an exit aperture 68 of collimator 54 is positioned adjacent
filter 56. Radiation from light pipe 42 passes through collimator
54 so that it is substantially collimated (e.g., within an
acceptance angle of about 15.degree.) when it passes through filter
56.
[0066] Collimator 54 should be a high efficiency reflective device,
such as a .theta..sub.in/.theta..sub.out device. Referring to FIG.
4, .theta..sub.in/.theta..sub.out device has a highly reflective
inner surface 70 which is divided into a conic section 72 located
adjacent the output end of light pipe 42, and a parabolic section
74 located between the conic section and the filter. Radiation
incident on the entrance aperture of the concentrator at angles
less than an acceptance angle emerge from the exit aperture at
angles less than an output angle. The acceptance and output angles
are measured with respect to the primary axis of the
concentrator.
[0067] Another sort of collimator, such as a compound parabolic
cone (CPC) or a lens system, could be used. Alternately, collimator
54 can be eliminated entirely if filter 56 has a sufficiently high
acceptance angle. However, if a collimator is used, a
.theta..sub.in/.theta..sub.out device is preferred because it
provides high efficiency and good spatial uniformity.
[0068] Returning to FIG. 3, filter 56 may have a narrow bandwidth,
e.g., about 40 nm, located entirely below the bandgap of silicon,
i.e., less than about 950 nanometers. For example, the bandwidth of
the filter may be centered at about 900 nanometers. In addition,
the filter should have extremely low transmitivity at wavelengths
within the bandgap of silicon. This prevents radiation which is
transmitted through the substrate from interfering with the
temperature measurement.
[0069] Filter 56 is positioned across an entrance aperture 76 of
concentrator 58, and primary photodetector 60 is positioned
adjacent an exit aperture 78 of the concentrator. The filtered
radiation is focused by concentrator 58 onto a small area on
primary photodetector 60. Preferably, concentrator 58 is also a
.theta..sub.in/.theta..sub.out device, although it may also be a
CPC or a lens system.
[0070] If the concentrator is a .theta..sub.in/.theta..sub.out
device, it may have an acceptance angle, the angle from an axis
normal to the reflector surface, within which it will concentrate
radiation. Radiation entering light pipe 42 within the acceptance
angle will pass through the concentrator, whereas radiation
entering light pipe 42 from outside the acceptance angle will be
reflected. The acceptance angle should be selected to prevent the
temperature probes from sampling the same region of the substrate,
while collecting as much radiation as possible. The acceptance
angle may be about 40.degree..
[0071] A gold plated pin 80 may extend through an aperture 84 in
the side of the concentrator and into the radiation path between
filter 56 and primary photodetector 60. A planar surface at the end
of pin 80 forms reflector 64. A second aperture 86 may be formed in
the side of concentrator 58 opposite pin 80. Reflector 64 is
positioned to deflect a central portion 90 (indicated by the dashed
lines) of the radiation from light pipe 42 through second aperture
86 to impinge secondary photodetector 62. The remainder of the
radiation, i.e., the outer portion 92 not reflected by reflector
64, passes around pin 80 and is directed by concentrator 58 onto
primary photodetector 60. The photodetectors 60 and 62 may be
secured to concentrator 58 by screws 88.
[0072] Since the non-reflected radiation from the substrate enters
light pipe 42 at low angles of incidence, this radiation will form
a higher proportion of central radiation portion 90 than the outer
radiation portion 92. Consequently, the radiation impinging
secondary photodetector 62 contains a higher proportion of
non-reflected light than the radiation impinging primary
photodetector 60. Since the proportions of reflected and
non-reflected light are different for primary photodetector 60 and
secondary photodetector 62, the substrate will exhibit different
effective emissivities to the detectors, and the detectors will
generate different intensity measurements. However, because the
radiation impinging the two detectors still contains multiple
components, the expression for the measured intensity given by
Equation (7) remains generally accurate. Thus, the intensity
I.sub.1 measured by the primary photodetector is given the
following equation: 6 I 1 = 1 I B ( T ) = S I B ( T ) 1 1 - P 1 ( 1
- S ) ( 9 )
[0073] and the intensity I.sub.2 measured by the secondary
photodetector is given by the following equation: 7 I 2 = 2 I B ( T
) = S I B ( T ) 1 1 - P 2 ( 1 - S ) ( 10 )
[0074] where .epsilon..sub.1 and .epsilon..sub.1 represent the
effective emissivities of the primary and secondary photodetectors,
and P.sub.1 and P.sub.2 represent the effective reflectivities of
the reflector plate to the first and second detectors.
[0075] The effective reflectivities P.sub.1 and P.sub.2 are system
constants determined by the configuration of the temperature sensor
40 (e.g., the size of reflector 64), the actual reflectivity of
reflector 20, and the configuration of reflecting cavity 34 (e.g.,
the distance between the reflector and the underside of the
substrate). In order to calibrate the temperature sensors and
determine the effective reflectivities P.sub.1 and P.sub.2, a
substrate having a known emissivity may be processed in RTP system
10. The results of thermal processing have a well defined
relationship to the substrate temperature. For example, as
discussed in the aforementioned U.S. Pat. No. 5,660,472, the
temperature T of a substrate may be deduced from the thickness of
an oxide layer formed thereon during thermal processing. The
effective reflectivities P.sub.1 and P.sub.2 may then be calculated
from the measured intensities I.sub.1 and I.sub.2, the actual
emissivity .epsilon..sub.S of the substrate, the substrate
temperature T, and the blackbody relationship.
[0076] Once the effective reflectivities P.sub.1 and P.sub.2 are
known, temperature sensor 40 may be used to determine the
temperature of a substrate having an arbitrary emissivity.
Specifically, given the measured values I.sub.1 and I.sub.2, and
the known effective reflectivities P.sub.1 and P.sub.2, Equations
(9) and (10) may be solved to calculate the substrate emissivity
.epsilon..sub.S and the blackbody intensity I.sub.B. Finally, an
exact solution for the substrate temperature T may be calculated
from the blackbody intensity I.sub.B according to the ideal
blackbody relationship of Equation (1).
[0077] Referring to FIG. 5, instead of an exact solution, the
substrate temperature may be calculated according to a simplified
approximation, substantially as discussed in the aforementioned
U.S. Pat. No. 5,660,472. First, the intensity measurements I.sub.1
and I.sub.2 are converted into temperature measurements T.sub.1 and
T.sub.2, respectively (step 102). Assuming that emissivity
correction has been enabled (step 104), and that the first
temperature measurement T.sub.1 is greater than a trigger level
(step 106), the difference between the two temperature measurements
is calculated, i.e., dT=T.sub.1-T.sub.2 (step 108). A running
average of a temperature difference dT may be calculated from, for
example, the five previous data points (step 110). This running
average reduces the effects of electrical noise and spurious
signals on the temperature measurement. Next, an initial wafer
emissivity E.sub.i is calculated (step 112) according to the
following equation: 8 E i = 1 - K 1 dT 1 + et 1 ( T 1 - 1100 ) ( 11
)
[0078] where K.sub.1 is an emissivity to dT ratio which is specific
to the chamber, and et.sub.1 is an emissivity temperature
coefficient which is specific to the system. The system constants
K.sub.1 and et.sub.1 may be determined in the same fashion that the
effective reflectivity P.sub.1 and P.sub.2 are determined; that is,
a substrate having a known emissivity is processed and the
substrate temperature is deduced from the process results. If the
initial wafer emissivity E.sub.i is greater than 1.0 (step 114)
then it may be set to 1.0 (step 116), whereas if E.sub.i is less
than 0.1 (step 118) then it may be set to 0.1 (step 120). Next, an
enhanced wafer emissivity E.sub.A may be calculated (step 122) from
the following equation: 9 E A = E i 1 - P C ( 1 - E i ) ( 12 )
[0079] where P.sub.c is an emissivity plate enhancement multiplier
which is specific to the chamber. If the enhanced emissivity
E.sub.A is greater than 1.0 (step 124) then it may be set to 1.0
(step 126), whereas if E.sub.A is less than 0.5 (step 128) then it
may be set to 0.5 (step 130). Finally, a corrected temperature
T.sub.c is calculated (step 132) according to the following
equation: 10 T C = c 2 ln ( E A ) + c 2 T 1 + 273 - 273 ( 13 )
[0080] where .lambda. is the radiation wavelength of interest and
c.sub.2 is a known physical constant.
[0081] Since each temperature sensor 40 corrects for the substrate
emissivity, uncertainty in the temperature measurement created by
variations in the emissivity across the substrate is reduced. In
addition, the emissivity correction may be performed by each probe,
without the introduction of additional probes into the processing
chamber. Since the .theta..sub.in/.theta..sub.out devices used for
the collimator and concentrator have a very high efficiency, little
light is lost in the optical path between the chamber and the
detector, thereby increasing the signal strength and reducing the
signal to noise ratio. Furthermore, because the pyrometer filter
excludes radiation of wavelengths at which the silicon substrate is
transparent, radiation from the heating element does not interfere
with the temperature measurement. In addition, since reflector 64
prevents a significant portion of the non-reflected radiation from
reaching the primary photodetector, the substrate has a higher
effective emissivity to the primary photodetector. Therefore, the
primary photodetector can generate a more accurate temperature
measurement, even at lower processing temperatures.
[0082] Other configurations and arrangements are possible for the
detector apparatus. For example, referring to FIG. 6, detector
apparatus 50' includes an optical splitter 140 to divide radiation
from filter 56 into a primary beam 142 and a secondary beam 144.
Optical splitter 140 may be a split optical fiber or a device which
is partially reflective and partially transmissive (on occasion
referred to simply as "partially reflective"), such as partially
silvered mirror or a polarizing beam splitter. Primary beam 142 is
directed to primary photodetector 60', whereas secondary beam 144
is directed to secondary photodetector 62'. An opaque element 146
having an aperture 148 is positioned in front of secondary
photodetector 62' so that only the central portion of the secondary
beam impinges the secondary photodetector. In contrast, the entire
primary beam 142 may impinge the primary photodetector, or
alternately, an opaque optical element 149 may be positioned in
front of the primary photodetector so that only the annular outer
portion of the primary beam impinges the primary photodetector.
Since the radiation which impinges secondary photodetector 62 has a
greater proportion of non-reflected light than the radiation which
impinges primary photodetector 60', the substrate will exhibit
different effective emissivities to the two detectors.
Consequently, the primary and secondary photodetectors generate
intensity signals I.sub.1 and I.sub.2 which may be used to
calculate the emissivity and temperature of the substrate as
discussed above. A similar result may be achieved simply by using
different numerical apertures in front of the primary and secondary
photodetectors. In addition, the optional opaque optical element
149 will prevent a substantial portion of the non-reflected
radiation from entering the primary photodetector, and consequently
the primary photodetector will generate a more accurate temperature
measurement.
[0083] Referring to FIG. 7, in another embodiment, the output end
of the light pipe is optically coupled to (e.g., held in close
contact with) a flexible fiber optic guide 152. Fiber optic guide
152 and light pipe 42 may be coupled by a threaded connector 154.
Sampled radiation passes down light pipe 42, through fiber optic
guide 152, and into a detector apparatus 150, such as a pyrometer.
The pyrometer computes the temperature of substrate 14 from the
intensity of the radiation sampled by light pipe 42.
[0084] Inside pyrometer box 150, radiation from fiber optic guide
152 passes through a collimating lens 156 to form a radiation beam
158. The radiation beam 158 passes through an optical pyrometer
filter 160 before impinging a photodetector 162. The signal from
photodetector 162 is input to control electronics 164 which convert
that signal to a temperature reading.
[0085] Referring to FIG. 8A, as previously discussed, the radiation
transmitted by fiber optic guide 152 passes through lens 156 before
reaching photodetector 162. Because the fiber optic guide and
radiation pipe operate by total internal reflection, the
distribution of input angles at the input end of the radiation pipe
is preserved at its output end. Therefore, the radiation which
entered light pipe 42 within central angle .alpha. will exit fiber
optic guide 152 within the same angle .alpha.. This radiation is
collimated by lens 156 to form a central portion 166 of beam 158.
The radiation entering light pipe 42 at an angle between an
acceptance angle (defined by the numerical aperture of lens 156)
and the central angle .alpha. forms an outer portion 168 of beam
158. The central portion 166 of beam 158 strikes a central area 170
of photodetector, whereas outer portion 168 of beam 158 strikes an
outer area 172 of the photodetector.
[0086] In one implementation, photodetector 162 is a charged
coupled device (CCD) or a similar multi-element detector. Referring
to FIG. 8B, photodetector 162 will include some detector elements
174a, such as photodiodes, associated with central area 170, and
some detector elements 174b, possibly also photodiodes, associated
with outer area 172. Control electronics 164 may be configured
(e.g., by software control) to use the output signals of detector
elements 174b to calculate a primary intensity signal I.sub.1, and
use the output signals of inner detector elements 174a to calculate
a secondary intensity signal I.sub.2. The two intensity signals
I.sub.1 and I.sub.2 may be used as described above in reference to
FIGS. 3-5 to calculate the emissivity and temperature of the
substrate.
[0087] Referring to FIGS. 9A and 9B, in another embodiment,
photodetector 162' includes a central inner detector 180 and an
annular outer detector 182. The central portion 166 of beam 158
strikes inner detector 180, whereas outer portion 168 of the beam
strikes outer detector 182. The outer detector 182 may be used as
the primary photodetector to generate a first intensity signal
I.sub.1 and the inner detector 180 may be used as the secondary
photodetector to generate a second intensity signal I.sub.2. The
two intensity signals may be used to calculate the emissivity and
temperature of the substrate.
[0088] Referring to FIGS. 10A and 10B, in yet another embodiment,
photodetector 162" may be formed from an upper detector 184 having
an aperture 186 and a lower detector 188. The outer portion 168 of
radiation beam 158 impinges upper detector 184, whereas central
portion 166 of the radiation beam passes through aperture 186 and
impinges lower detector 188. The upper detector 184 may be used as
the primary photodetector to generate a first intensity signal
I.sub.1, and the lower detector 188 may be used as the secondary
photodetector to generate a second intensity signal I.sub.2. The
output signals of the two detectors may be used to calculate the
substrate emissivity and temperature.
[0089] Referring to FIG. 11, in another embodiment, fiber optic
guide 152' may be a split fiber optic bundle with a first branch
194 and a second branch 196. The portion of fiber optic guide 152'
adjacent to the output end of light pipe 42 includes a central
portion 190 and an outer portion 192. The first branch 194 includes
the optical fibers from outer portion 192, whereas the second
branch includes the optical fibers from central portion 190. The
first branch 194 is directed to primary photodetector 60" whereas
second branch 196 is directed to a secondary photodetector 62".
Therefore, radiation within angle .alpha. will enter the first
branch, whereas radiation outside angle .alpha. will enter the
second branch. As a result, radiation within angle .alpha. does not
reach the primary photodetector, and the effective emissivity of
the substrate is increased to that detector. The output signals
from the primary and secondary photodetectors may be used to
calculate the emissivity and temperature of the substrate.
[0090] Referring to FIG. 12, in yet another embodiment, fiber optic
guide 152" may be a split fiber optic bundle with a first branch
194' and a second branch 196'. The two branches 194' and 196' may
sample portions of the radiation having substantially similar
radial distributions. Radiation from first branch 194 is directed
through a first numerical aperture 198 to primary photodetector
60", whereas radiation from second branch 196 is directed through a
second, smaller numerical aperture 199 to secondary photodetector
62". Since the numerical apertures are different, the two
photodetectors will have different acceptance angles. Specifically,
the secondary photodetector 62" will have a narrower acceptance
angle than primary photodetector 60". As a result, the secondary
photodetector will collect more radiation from the area of the
substrate directly above the probe. Therefore, the second
photodetector uses more non-reflected radiation than the primary
photodetector, and the effective emissivity of the substrate will
be different for the two detectors. The output signals from the
primary and secondary photodetectors may be used to calculate the
emissivity and temperature of the substrate.
[0091] The temperature calculation may be performed without
emissivity correction. For example, the control electronics may be
connected only to the photodetector element or elements (e.g.,
primary photodetector 60, detector elements 174b, inner detector
180, lower detector 188, or primary photodetector 60") that measure
the intensity of the outer portion of the radiation beam.
Alternately, the control electronics may be configured to ignore
the output signal of the photodetector element or elements (e.g.,
secondary photodetector 62, detector elements 174a, outer detector
182, upper detector 184, or secondary photodetector 62") that
measure the intensity of the inner portion of radiation beam. In
either case, the temperature sensor uses less direct radiation and
more reflected radiation, and the effective emissivity of the
substrate is increased, thereby providing a more accurate
temperature measurement. In the embodiment of FIG. 11, if no
emissivity correction is to be made, the secondary photodetector
62" may be replaced by a reflector.
[0092] The invention is not limited to the embodiments depicted and
described. Rather, the scope of the invention is defined by the
appended claims.
* * * * *