U.S. patent application number 09/800798 was filed with the patent office on 2002-09-12 for high-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers.
This patent application is currently assigned to Applied Materials, Inc.. Invention is credited to Duncan, Robert, Ishikawa, Tetsuya, Lai, Canfeng, Niazi, Kaveh, Tanaka, Tsutomu.
Application Number | 20020127350 09/800798 |
Document ID | / |
Family ID | 25179388 |
Filed Date | 2002-09-12 |
United States Patent
Application |
20020127350 |
Kind Code |
A1 |
Ishikawa, Tetsuya ; et
al. |
September 12, 2002 |
HIGH-PERMEABILITY MAGNETIC SHIELD FOR IMPROVED PROCESS UNIFORMITY
IN NONMAGNETIZED PLASMA PROCESS CHAMBERS
Abstract
A method and apparatus for forming a layer on a substrate in a
process chamber during a plasma deposition process are provided. A
plasma is formed in a process chamber, a process gas with precursor
gases suitable for depositing the layer are flowed into the process
chamber, and a magnetic field having a strength less than about 0.5
gauss is attenuated within the process chamber. Attenuation of such
a magnetic field results in an improvement in the degree of process
uniformity achieved during the deposition.
Inventors: |
Ishikawa, Tetsuya; (Santa
Clara, CA) ; Niazi, Kaveh; (Santa Clara, CA) ;
Tanaka, Tsutomu; (Santa Clara, CA) ; Lai,
Canfeng; (Fremont, CA) ; Duncan, Robert; (San
Jose, CA) |
Correspondence
Address: |
PATENT COUNSEL
APPLIED MATERIALS, INC.
Legal Affairs Department
P.O. Box 450A
Santa Clara
CA
95052
US
|
Assignee: |
Applied Materials, Inc.
|
Family ID: |
25179388 |
Appl. No.: |
09/800798 |
Filed: |
March 7, 2001 |
Current U.S.
Class: |
427/569 ;
118/723E; 118/723ER; 118/723R; 427/598 |
Current CPC
Class: |
C23C 16/45508 20130101;
C23C 16/52 20130101; C23C 16/507 20130101 |
Class at
Publication: |
427/569 ;
427/598; 118/723.00R; 118/723.0ER; 118/723.00E |
International
Class: |
C23C 016/00; C23C
014/00 |
Claims
What is claimed is:
1. A method for forming a layer on a substrate in a nonmagnetized
process chamber during a plasma deposition process, the method
comprising: (a) forming a plasma in the process chamber; (b)
flowing a process gas suitable for depositing the layer on the
substrate into the process chamber; and (c) limiting sputter
nonuniformity by attenuating a magnetic field having a strength
less than about 0.5 gauss within the process chamber.
2. The method according to claim 1 wherein the plasma is a
high-density plasma.
3. The method according to claim 1 wherein the substrate is a
circular wafer with a diameter greater than 200 mm.
4. The method according to claim 3 wherein the diameter of the
circular wafer is substantially equal to 300 mm.
5. The method according to claim 1 wherein the step of limiting
sputter nonuniformity by attenuating the magnetic field is
performed with a magnetic shield that at least partially encloses
the process chamber.
6. The method according to claim 5 wherein the magnetic shield has
a magnetic permeability greater than 10.sup.4 times the magnetic
permeability of free space.
7. The method according to claim 5 wherein the magnetic shield
comprises greater than 75 at. % Ni and greater than 12 at. %
Fe.
8. The method according to claim 7 wherein the magnetic shield
further comprises greater than 4 at. % Mo.
9. The method according to claim 5 wherein the magnetic shield
encloses substantially all of the process chamber.
10. The method according to claim 1 wherein the magnetic field is
the geomagnetic field.
11. A method for forming a layer on a circular wafer having a
diameter greater than 200 mm in a nonmagnetized process chamber
during a high-density-plasma deposition process, the method
comprising: (a) forming a plasma in the process chamber; (b)
flowing a process gas suitable for depositing the layer on the
substrate into the process chamber; and (c) limiting sputter
nonuniformity by attenuating a magnetic field having a strength
less than about 0.5 gauss within the process chamber with a
magnetic shield having a magnetic permeability greater than
10.sup.4 times the magnetic permeability of free space.
12. The method according to claim 11 wherein the magnetic shield
comprises greater than 75 at. % Ni, greater than 12 at. % Fe, and
greater than 4 at % Mo.
13. The method according to claim 11 wherein the diameter of the
circular wafer is approximately 300 mm or greater.
14. The method according to claim 10 wherein the magnetic field is
the geomagnetic field.
15. A substrate processing system comprising: (a) a nonmagnetized
substrate processing chamber; (b) a plasma-generating system
operatively coupled to the processing chamber to generate a plasma
within the substrate processing chamber; and (c) a magnetic shield
configured to enclose at least a portion of the process chamber for
limiting sputter nonuniformity by attenuating a magnetic field
having a field strength less than about 0.5 gauss within the
process chamber.
16. The substrate processing system according to claim 15 wherein
the substrate processing chamber is sized configured to hold a
circular wafer with a diameter greater than 200 mm.
17. The substrate processing system according to claim 16 wherein
the substrate processing chamber is sized and configured to hold a
circular wafer with a diameter substantially equal to 300 mm.
18. The substrate processing system according to claim 15 wherein
the plasma is a high-density plasma.
19. The substrate processing system according to claim 15 wherein
the magnetic shield has a magnetic permeability greater than
10.sup.4 times the magnetic permeability of free space.
20. The substrate processing system according to claim 15 wherein
the magnetic shield comprises greater than 75 at. % Ni and greater
than 12 at. % Fe.
21. The substrate processing system according to claim 20 wherein
the magnetic shield further comprises greater than 4 at. % Mo.
22. The substrate processing system according to claim 15 wherein
the magnetic shield encloses substantially all of the process
chamber.
23. A substrate processing system comprising: (a) a nonmagnetized
substrate processing chamber sized and configured to hold a
circular wafer having a diameter greater than 200 mm; (b) a
high-density plasma generating system operatively coupled to the
processing chamber to generate a plasma within the substrate
processing chamber; and (c) a magnetic shield having a magnetic
permeability greater than 10.sup.4 times the magnetic permeability
of free space and configured to enclose at least a portion of the
process chamber for limiting sputter nonuniformity by attenuating a
magnetic field having a field strength less than about 0.5 gauss
within the process chamber.
24. The substrate processing system according to claim 23 wherein
the magnetic shield comprises greater than 75 at. % Ni, greater
than 12 at. % Fe, and greater than 4 at. % Mo.
25. The substrate processing system according to claim 23 wherein
the diameter of the circular wafer is approximately 300 mm or
greater.
Description
BACKGROUND OF THE INVENTION
[0001] The present invention relates to the manufacture of
integrated circuits on a substrate. More particularly, the
invention relates to a method and apparatus for improving the
process uniformity of plasma processing techniques used in such
manufacture.
[0002] One of the primary steps in the fabrication of modern
semiconductor devices is the formation of a thin film on a
semiconductor substrate by chemical reaction of gases. Such a
deposition process is referred to generally as chemical vapor
deposition ("CVD"). Conventional thermal CVD processes supply
reactive gases to the substrate surface where heat-induced chemical
reactions take place to produce a desired film. Plasma-enhanced CVD
("PECVD") techniques, on the other hand, promote excitation and/or
dissociation of the reactant gases by the application of
radio-frequency ("RF") energy to a reaction zone near the substrate
surface, thereby creating a plasma. The high reactivity of the
species in the plasma reduces the energy required for a chemical
reaction to take place, and thus lowers the temperature required
for such CVD processes as compared to conventional thermal CVD
processes. These advantages are further exploited by
high-density-plasma ("HDP") CVD techniques, in which a dense plasma
is formed at low vacuum pressures so that the plasma species are
even more reactive.
[0003] Any of these CVD techniques may be used to deposit
conductive or insulative films as necessary during the fabrication
of integrated circuits. It is generally desirable that the process
for depositing such a film be uniform in all respects. Recently,
there has been an economically motivated trend to increase the size
of circular semiconductor wafers used in such CVD applications.
Currently, wafers with diameters up to 300 mm are being used, up
from about 200 mm in the recent past. While the increase in wafer
diameter is economically advantageous, it also tends to increase
the degree of nonuniformity introduced during deposition
procedures. The effects of such nonuniformity are especially
noticeable when larger wafers are used because the total wafer area
varies as the square of its diameter. In particular, it has been
observed that the sputter nonuniformity in an HDP-CVD process is
significantly greater when the process is performed on a 300-mm
wafer when compared with the process performed on a 200-mm wafer.
Indications suggest that if economic considerations push towards
the use of even larger wafers, the effects of sputter nonuniformity
will be even greater.
[0004] Accordingly, it is desirable to have a method and apparatus
that will generally improve process uniformity, particularly when
larger-sized wafers are to be used.
SUMMARY OF THE INVENTION
[0005] The inventors have discovered that sputter nonuniformity in
plasma deposition processes is affected by magnetic fields on the
order of the geomagnetic field of 0.5 gauss or less. This field can
be caused by permanent magnets in the vicinity of a deposition
chamber or by the earth itself. One factor in the sputter
nonuniformity is believed to result from impacts from electrons in
the plasma. As wafer sizes increase so that they diameters exceed
the order of the mean cyclotron radius of such electrons, the
effect from this factor is enhanced. Since the electron cyclotron
radius is inversely proportional to the strength of the ambient
magnetic field, attenuation of a magnetic field having a strength
less than about 0.5 gauss within the process chamber results in an
increase in the cyclotron radius of the electrons, with a
concomitant decrease in the degree of sputter nonuniformity.
Accordingly, in a first embodiment of the invention, a method is
provided for forming a layer on a substrate during a plasma
deposition process by forming a plasma in a process chamber,
flowing suitable deposition precursor gases into the process
chamber, and limiting sputter nonuniformity by attenuating a
magnetic field having a strength less than about 0.5 gauss within
the process chamber.
[0006] In specific embodiments of the invention, the attenuation of
such a magnetic field is achieved with a magnetic shield positioned
to enclose at least a portion of the process chamber. In some of
these embodiments, the permeability of the magnetic shield is
greater than 10.sup.4 times the permeability of free space. In one
specific embodiment, an appropriate material for the magnetic
shield that achieves the desired permeability comprises greater
than 75 at. % nickel and greater than 12 at. % iron; it preferably
also comprises greater than 4 at. % molybdenum.
[0007] The methods of the present invention may be used with a
substrate processing system. Such a substrate processing system
includes a nonmagnetized substrate processing chamber and a
plasma-generating system operatively coupled to the processing
chamber to generate a plasma within the substrate processing
chamber. A magnetic shield is configured to enclose at least a
portion of the process chamber for limiting sputter nonuniformity
by attenuating a magnetic field having a strength less than about
0.5 gauss within the process chamber.
[0008] A further understanding of the nature and advantages of the
present invention may be realized by reference to the remaining
portions of the specification and the drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] FIG. 1A is a simplified diagram of one embodiment of a
high-density plasma chemical vapor deposition system according to
the present invention.
[0010] FIG. 1B is a simplified cross section of a gas ring that may
be used in conjunction with the exemplary CVD processing chamber of
FIG. 1A.
[0011] FIG. 1C is a simplified diagram of a monitor and light pen
that may be used in conjunction with the exemplary CVD processing
chamber of FIG. 1A.
[0012] FIG. 1D is a flow chart of an exemplary process control
computer program product used to control the exemplary CVD
processing chamber of FIG. 1A;
[0013] FIG. 2 shows a cross-sectional view of one embodiment of the
invention in which the magnetic flux leakage of a high-permeability
magnetic shield is minimized.
DESCRIPTION OF THE SPECIFIC EMBODIMENTS
I. INTRODUCTION
[0014] Embodiments of the present invention are directed to a
method and apparatus for improving the process uniformity during
plasma CVD deposition processes. By enclosing the plasma chamber
with a shield constructed from a high-magnetic-permeability
material, a substantial improvement in process uniformity,
particularly in sputter uniformity, is achieved. As explained in
detail below, attenuation of magnetic fields on the order of 0.5
gauss or less within the process chamber reduces the sputter
nonuniformity, leading to a general improvement in deposition
characteristics.
II. EXEMPLARY SUBSTRATE PROCESSING SYSTEM
[0015] FIG. 1A illustrates one embodiment of a high density plasma
chemical vapor deposition (HDP-CVD) system 10 in which a dielectric
layer according to the present invention can be deposited. System
10 includes a chamber 13, a vacuum system 70, a source plasma
system 80A, a bias plasma system 80B, a gas delivery system 33, and
a remote plasma cleaning system 50.
[0016] The upper portion of chamber 13 includes a dome 14, which is
made of a ceramic dielectric material, such as aluminum oxide or
aluminum nitride. Dome 14 defines an upper boundary of a plasma
processing region 16. Plasma processing region 16 is bounded on the
bottom by the upper surface of a substrate 17 and a substrate
support member 18.
[0017] A heater plate 23 and a cold plate 24 surmount, and are
thermally coupled to, dome 14. Heater plate 23 and cold plate 24
allow control of the dome temperature to within about
.+-.10.degree. C. over a range of about 100.degree. C. to
200.degree. C. This allows optimizing the dome temperature for the
various processes. For example, it may be desirable to maintain the
dome at a higher temperature for cleaning or etching processes than
for deposition processes. Accurate control of the dome temperature
also reduces the flake or particle counts in the chamber and
improves adhesion between the deposited layer and the
substrate.
[0018] The lower portion of chamber 13 includes a body member 22,
which joins the chamber to the vacuum system. A base portion 21 of
substrate support member 18 is mounted on, and forms a continuous
inner surface with, body member 22. Substrates are transferred into
and out of chamber 13 by a robot blade (not shown) through an
insertion/removal opening (not shown) in the side of chamber 13.
Lift pins (not shown) are raised and then lowered under the control
of a motor (also not shown) to move the substrate from the robot
blade at an upper loading position 57 to a lower processing
position 56 in which the substrate is placed on a substrate
receiving portion 19 of substrate support member 18. Substrate
receiving portion 19 includes an electrostatic chuck 20 that
secures the substrate to substrate support member 18 during
substrate processing. In a preferred embodiment, substrate support
member 18 is made from an aluminum oxide or aluminum ceramic
material.
[0019] Vacuum system 70 includes throttle body 25, which houses
twin-blade throttle valve 26 and is attached to gate valve 27 and
turbo-molecular pump 28. It should be noted that throttle body 25
offers minimum obstruction to gas flow, and allows symmetric
pumping. Gate valve 27 can isolate pump 28 from throttle body 25,
and can also control chamber pressure by restricting the exhaust
flow capacity when throttle valve 26 is fully open. The arrangement
of the throttle valve, gate valve, and turbo-molecular pump allow
accurate and stable control of chamber pressures from between about
1 millitorr to about 2 torr.
[0020] The source plasma system 80A includes a top coil 29 and side
coil 30, mounted on dome 14. A symmetrical ground shield (not
shown) reduces electrical coupling between the coils. Top coil 29
is powered by top source RF (SRF) generator 31A, whereas side coil
30 is powered by side SRF generator 31B, allowing independent power
levels and frequencies of operation for each coil. This dual coil
system a lows control of the radial ion density in chamber 13,
thereby improving plasma uniformity. Side coil 30 and top coil 29
are typically inductively driven, which does not require a
complimentary electrode. In a specific embodiment, the top source
RF generator 31A provides up to 2,500 watts of RF power at
nominally 2 MHz and the side source RF generator 31B provides up to
5,000 watts of RF power at nominally 2 MHz. The operating
frequencies of the top and side RF generators may be offset from
the nominal operating frequency (e.g. to 1.7-1.9 MHz and 1.9-2.1
MHz, respectively) to improve plasma-generation efficiency.
[0021] A bias plasma system 80B includes a bias RF ("BRF")
generator 31C and a bias matching network 32C. The bias plasma
system 80B capacitively couples substrate portion 17 to body member
22, which act as complimentary electrodes. The bias plasma system
80B serves to enhance the transport of plasma species (e.g., ions)
created by the source plasma system 80A to the surface of the
substrate. In a specific embodiment, bias RF generator provides up
to 5,000 watts of RF power at 13.56 MHz.
[0022] RF generators 31A and 31B include digitally controlled
synthesizers and operate over a frequency range between about 1.8
to about 2.1 MHz. Each generator includes an RF control circuit
(not shown) that measures reflected power from the chamber and coil
back to the generator and adjusts the frequency of operation to
obtain the lowest reflected power, as understood by a person of
ordinary skill in the art. RF generators are typically designed to
operate into a load with a characteristic impedance of 50 ohms. RF
power may be reflected from loads that have a different
characteristic impedance than the generator. This can reduce power
transferred to the load. Additionally, power reflected from the
load back to the generator may overload and damage the generator.
Because the impedance of a plasma may range from less than 5 ohms
to over 900 ohms, depending on the plasma ion density, among other
factors, and because reflected power may be a function of
frequency, adjusting the generator frequency according to the
reflected power increases the power transferred from the RF
generator to the plasma and protects the generator. Another way to
reduce reflected power and improve efficiency is with a matching
network.
[0023] Matching networks 32A and 32B match the output impedance of
generators 31A and 31B with their respective coils 29 and 30. The
RF control circuit may tune both matching networks by changing the
value of capacitors within the matching networks to match the
generator to the load as the load changes. The RF control circuit
may tune a matching network when the power reflected from the load
back to the generator exceeds a certain limit. One way to provide a
constant match, and effectively disable the RF control circuit from
tuning the matching network, is to set the reflected power limit
above any expected value of reflected power. This may help
stabilize a plasma under some conditions by holding the matching
network constant at its most recent condition.
[0024] Other measures may also help stabilize a plasma. For
example, the RF control circuit can be used to determine the power
delivered to the load (plasma) and may increase or decrease the
generator output power to keep the delivered power substantially
constant during deposition of a layer.
[0025] A gas delivery system 33 provides gases from several
sources, 34A-34F chamber for processing the substrate via gas
delivery lines 38 (only some of which are shown). As would be
understood by a person of skill in the art, the actual sources used
for sources 34A-34F and the actual connection of delivery lines 38
to chamber 13 varies depending on the deposition and cleaning
processes executed within chamber 13. Gases are introduced into
chamber 13 through a gas ring 37 and/or a top nozzle 45. FIG. 1B is
a simplified, partial cross-sectional view of chamber 13 showing
additional details of gas ring 37.
[0026] In one embodiment, first and second gas sources, 34A and
34B, and first and second gas flow controllers, 35A' and 35B',
provide gas to ring plenum 36 in gas ring 37 via gas delivery lines
38 (only some of which are shown). Gas ring 37 has a plurality of
source gas nozzles 39 (only one of which is shown for purposes of
illustration) that provide a uniform flow of gas over the
substrate. Nozzle length and nozzle angle may be changed to allow
tailoring of the uniformity profile and gas utilization efficiency
for a particular process within an individual chamber. In a
preferred embodiment, gas ring 37 has 12 source gas nozzles made
from an aluminum oxide ceramic.
[0027] Gas ring 37 also has a plurality of oxidizer gas nozzles 40
(only one of which is shown), which in a preferred embodiment are
co-planar with and shorter than source gas nozzles 39, and in one
embodiment receive gas from body plenum 41. In some embodiments it
is desirable not to mix source gases and oxidizer gases before
injecting the gases into chamber 13. In other embodiments, oxidizer
gas and source gas may be mixed prior to injecting the gases into
chamber 13 by providing apertures (not shown) between body plenum
41 and gas ring plenum 36. In one embodiment, third and fourth gas
sources, 34C and 34D, and third and fourth gas flow controllers,
35C and 35D', provide gas to body plenum via gas delivery lines 38.
Additional valves, such as 43B (other valves not shown), may shut
off gas from the flow controllers to the chamber.
[0028] In embodiments where flammable, toxic, or corrosive gases
are used, it may be desirable to eliminate gas remaining in the gas
delivery lines after a deposition. This may be accomplished using a
3-way valve, such as valve 43B, to isolate chamber 13 from delivery
line 38A and to vent delivery line 38A to vacuum foreline 44, for
example. As shown in FIG. 1A, other similar valves, such as 43A and
43C, may be incorporated on other gas delivery lines. Such 3-way
valves may be placed as close to chamber 13 as practical, to
minimize the volume of the unvented gas delivery line (between the
3-way valve and the chamber). Additionally, two-way (on-off) valves
(not shown) may be placed between a mass flow controller ("MFC")
and the chamber or between a gas source and an MFC.
[0029] Referring again to FIG. 1A, chamber 13 also has top nozzle
45 and top vent 46. Top nozzle 45 and top vent 46 allow independent
control of top and side flows of the gases, which improves film
uniformity and allows fine adjustment of the film's deposition and
doping parameters. Top vent 46 is an annular opening around top
nozzle 45. In one embodiment, first gas source 34A supplies source
gas nozzles 39 and top nozzle 45. Source nozzle MFC 35A' controls
the amount of gas delivered to source gas nozzles 39 and top nozzle
MFC 35A controls the amount of gas delivered to top gas nozzle 45.
Similarly, two MFCs 35B and 35B' may be used to control the flow of
oxygen to both top vent 46 and oxidizer gas nozzles 40 from a
single source of oxygen, such as source 34B. The gases supplied to
top nozzle 45 and top vent 46 may be kept separate prior to flowing
the gases into chamber 13, or the gases may be mixed in top plenum
48 before they flow into chamber 13. Separate sources of the same
gas may be used to supply various portions of the chamber.
[0030] A remote microwave-generated plasma cleaning system 50 is
provided to periodically clean deposition residues from chamber
components. The cleaning system includes a remote microwave
generator 51 that creates a plasma from a cleaning gas source 34E
(e.g., molecular fluorine, nitrogen trifluoride, other
fluorocarbons or equivalents) in reactor cavity 53. The reactive
species resulting from this plasma are conveyed to chamber 13
through cleaning gas feed port 54 via applicator tube 55. The
materials used to contain the cleaning plasma (e.g., cavity 53 and
applicator tube 55) must be resistant to attack by the plasma. The
distance between reactor cavity 53 and feed port 54 should be kept
as short as practical, since the concentration of desirable plasma
species may decline with distance from reactor cavity 53.
Generating the cleaning plasma in a remote cavity allows the use of
an efficient microwave generator and does not subject chamber
components to the temperature, radiation, or bombardment of the
glow discharge that may be present in a plasma formed in situ.
Consequently, relatively sensitive components, such as
electrostatic chuck 20, do not need to be covered with a dummy
wafer or otherwise protected, as may be required with an in situ
plasma cleaning process. In one embodiment, this cleaning system is
used to dissociate atoms of the etchant gas remotely, which are
then supplied to the process chamber 13. In another embodiment, the
etchant gas is provided directly to the process chamber 13. In
still a further embodiment, multiple process chambers are used,
with deposition and etching steps being performed in separate
chambers.
[0031] System controller 60 controls the operation of system 10. In
a preferred embodiment, controller 60 includes a memory 62, such as
a hard disk drive, a floppy disk drive (not shown), and a card rack
(not shown) coupled to a processor 61. The card rack may contain a
single-board computer (SBC) (not shown), analog and digital
input/output boards (not shown), interface boards (not shown), and
stepper motor controller boards (not shown). The system controller
conforms to the Versa Modular European ("VME") standard, which
defines board, card cage, and connector dimensions and types. The
VME standard also defines the bus structure as having a 16-bit data
bus and 24-bit address bus. System controller 31 operates under the
control of a computer program stored on the hard disk drive or
through other computer programs, such as programs stored on a
removable disk. The computer program dictates, for example, the
timing, mixture of gases, RF power levels and other parameters of a
particular process. The interface between a user and the system
controller is via a monitor, such as a cathode ray tube ("CRT") 65,
and a light pen 66, as depicted in FIG. 1C.
[0032] FIG. 1C is an illustration of a portion of an exemplary
system user interface used in conjunction with the exemplary CVD
processing chamber of FIG. 1A. System controller 60 includes a
processor 61 coupled to a computer-readable memory 62. Preferably,
memory 62 may be a hard disk drive, but memory 62 may be other
kinds of memory, such as ROM, PROM, and others.
[0033] System controller 60 operates under the control of a
computer program 63 stored in a computer-readable format within
memory 62. The computer program dictates the timing, temperatures,
gas flows, RF power levels and other parameters of a particular
process. The interface between a user and the system controller is
via a CRT monitor 65 and a light pen 66, as depicted in FIG. 1C. In
a preferred embodiment, two monitors, 65 and 65A, and two light
pens, 66 and 66A, are used, one mounted in the clean room wall (65)
for the operators and the other behind the wall (65A) for the
service technicians. Both monitors simultaneously display the same
information, but only one light pen (e.g. 66) is enabled. To select
a particular screen or function, the operator touches an area of
the display screen and pushes a button (not shown) on the pen. The
touched area confirms being selected by the light pen by changing
its color or displaying a new menu, for example.
[0034] The computer program code can be written in any conventional
computer-readable programming language such as 68000 assembly
language, C, C++, or Pascal. Suitable program code is entered into
a single file, or multiple files, using a conventional text editor
and is stored or embodied in a computer-usable medium, such as a
memory system of the computer. If the entered code text is in a
high level language, the code is compiled, and the resultant
compiler code is then linked with an object code of precompiled
windows library routines. To execute the linked compiled object
code, the system user invokes the object code causing the computer
system to load the code in memory. The CPU reads the code from
memory and executes the code to perform the tasks identified in the
program.
[0035] FIG. 1D shows an illustrative block diagram of the
hierarchical control structure of computer program 100. A user
enters a process set number and process chamber number into a
process selector subroutine 110 in response to menus or screens
displayed on the CRT monitor by using the light pen interface. The
process sets are predetermined sets of process parameters necessary
to carry out specified processes, and are identified by predefined
set numbers. Process selector subroutine 110 identifies (i) the
desired process chamber in a multichamber system, and (ii) the
desired set of process parameters needed to operate the process
chamber for performing the desired process. The process parameters
for performing a specific process relate to conditions such as
process gas composition and flow rates, temperature, pressure,
plasma conditions such as RF power levels, and chamber dome
temperature, and are provided to the user in the form of a recipe.
The parameters specified by the recipe are entered utilizing the
light pen/CRT monitor interface.
[0036] The signals for monitoring the process are provided by the
analog and digital input boards of system controller 60, and the
signals for controlling the process are output on the analog and
digital output boards of system controller 60.
[0037] A process sequencer subroutine 120 comprises program code
for accepting the identified process chamber and set of process
parameters from the process selector subroutine 110 and for
controlling operation of the various process chambers. Multiple
users can enter process set numbers and process chamber numbers, or
a single user can enter multiple process set numbers and process
chamber numbers; sequencer subroutine 120 schedules the selected
processes in the desired sequence. Preferably, sequencer subroutine
120 includes a program code to perform the steps of (i) monitoring
the operation of the process chambers to determine if the chambers
are being used, (ii) determining what processes are being carried
out in the chambers being used, and (iii) executing the desired
process based on availability of a process chamber and type of
process to be carried out. Conventional methods of monitoring the
process chambers can be used, such as polling. When scheduling
which process is to be executed, sequencer subroutine 120 can be
designed to take into consideration the "age" of each particular
user-entered request, or the present condition of the process
chamber being used in comparison with the desired process
conditions for a selected process, or any other relevant factor a
system programmer desires to include for determining scheduling
priorities.
[0038] After sequencer subroutine 120 determines which process
chamber and process set combination is going to be executed next,
sequencer subroutine 120 initiates execution of the process set by
passing the particular process set parameters to a chamber manager
subroutine 130A-C, which controls multiple processing tasks in
chamber 13 and possibly other chambers (not shown) according to the
process set sent by sequencer subroutine 120.
[0039] Examples of chamber component subroutines are substrate
positioning subroutine 140, process gas control subroutine 150,
pressure control subroutine 160, and plasma control subroutine 170.
Those having ordinary skill in the art will recognize that other
chamber control subroutines can be included depending on what
processes are selected to be performed in chamber 13. In operation,
chamber manager subroutine 130A selectively schedules or calls the
process component subroutines in accordance with the particular
process set being executed. Chamber manager subroutine 130A
schedules process component subroutines in the same manner that
sequencer subroutine 120 schedules the process chamber and process
set to execute. Typically, chamber manager subroutine 130A includes
steps of monitoring the various chamber components. determining
which components need to be operated based on the process
parameters for the process set to be executed, and causing
execution of a chamber component subroutine responsive to the
monitoring and determining steps.
[0040] Operation of particular chamber component subroutines will
now be described with reference to FIGS. 1A and 1D. Substrate
positioning subroutine 140 comprises program code for controlling
chamber components that are used to load a substrate onto substrate
support number 18. Substrate positioning subroutine 140 may also
control transfer of a substrate into chamber 13 from, e.g., a
plasma-enhanced CVD ("PECVD") reactor or other reactor in the
multi-chamber system, after other processing has been
completed.
[0041] Process gas control subroutine 150 has program code for
controlling process gas composition and flow rates. Subroutine 150
controls the open/close position of the safety shut-off valves and
also ramps up/ramps down the mass flow controllers to obtain the
desired gas flow rates. All chamber component subroutines,
including process gas control subroutine 150, are invoked by
chamber manager subroutine 130A. Subroutine 150 receives process
parameters from chamber manager subroutine 130A related to the
desired gas flow rates.
[0042] Typically, process gas control subroutine 150 opens the gas
supply lines, and repeatedly (i) reads the necessary mass flow
controllers, (ii) compares the readings to the desired flow rates
received from chamber manager subroutine 130A, and (iii) adjusts
the flow rates of the gas supply lines as necessary. Furthermore,
process gas control subroutine 150 may include steps for monitoring
the gas flow rates for unsafe rates and for activating the safety
shut-off valves when an unsafe condition is detected.
[0043] In some processes, an inert gas, such as argon, is flowed
into chamber 13 to stabilize the pressure in the chamber before
reactive process gases are introduced. For these processes, the
process gas control subroutine 150 is programmed to include steps
for flowing the inert gas into chamber 13 for an amount of time
necessary to stabilize the pressure in the chamber. The steps
described above may then be carried out.
[0044] Additionally, when a process gas is to be vaporized from a
liquid precursor, for example, tetraethylorthosilane (TEOS), the
process gas control subroutine 150 may include steps for bubbling a
delivery gas such as helium through the liquid precursor in a
bubbler assembly or for introducing the helium to a liquid
injection valve. For this type of process, the process gas control
subroutine 150 regulates the flow of the delivery gas, the pressure
in the bubbler, and the bubbler temperature to obtain the desired
process gas flow rates. As discussed above, the desired process gas
flow rates are transferred to process gas control subroutine 150 as
process parameters.
[0045] Furthermore, the process gas control subroutine 150 includes
steps for obtaining the necessary delivery gas flow rate, bubbler
pressure, and bubbler temperature for the desired process gas flow
rate by accessing a stored table containing the necessary values
for a given process gas flow rate. Once the necessary values are
obtained, the delivery gas flow rate, bubbler pressure and bubbler
temperature are monitored, compared to the necessary values and
adjusted accordingly.
[0046] The process gas control subroutine 150 may also control the
flow of heat-transfer gas, such as helium (He), through the inner
and outer passages in the wafer chuck with an independent helium
control (IHC) subroutine (not shown). The gas flow thermally
couples the substrate to the chuck. In a typical process, the wafer
is heated by the plasma and the chemical reactions that form the
layer, and the He cools the substrate through the chuck, which may
be water-cooled. This keeps the substrate below a temperature that
may damage preexisting features on the substrate.
[0047] Pressure control subroutine 160 includes program code for
controlling the pressure in chamber 13 by regulating the size of
the opening of throttle valve 26 in the exhaust portion of the
chamber. There are at least two basic methods of controlling the
chamber with the throttle valve. The first method relies on
characterizing the chamber pressure as it relates to, among other
things, the total process gas flow, the size of the process
chamber, and the pumping capacity. The first method sets throttle
valve 26 to a fixed position. Setting throttle valve 26 to a fixed
position may eventually result in a steady-state pressure.
[0048] Alternatively, the chamber pressure may be measured, with a
manometer for example, and the position of throttle valve 26 may be
adjusted according to pressure control subroutine 360, assuming the
control point is within the boundaries set by gas flows and exhaust
capacity. The former method may result in quicker chamber pressure
changes, as the measurements, comparisons, and calculations
associated with the latter method are not invoked. The former
method may be desirable where precise control of the chamber
pressure is not required, whereas the latter method may be
desirable where an accurate, repeatable, and stable pressure is
desired, such as during the deposition of a layer.
[0049] When pressure control subroutine 160 is invoked, the
desired, or target, pressure level is received as a parameter from
chamber manager subroutine 130A. Pressure control subroutine 160
measures the pressure in chamber 13 by reading one or more
conventional pressure manometers connected to the chamber; compares
the measured value(s) to the target pressure; obtains proportional,
integral, and differential (PID) values from a stored pressure
table corresponding to the target pressure, and adjusts throttle
valve 26 according to the PID values obtained from the pressure
table. Alternatively, pressure control subroutine 160 may open or
close throttle valve 26 to a particular opening size to regulate
the pressure in chamber 13 to a desired pressure or pressure
range.
[0050] Plasma control subroutine 170 comprises program code for
controlling the frequency and power output setting of RF generators
31A and 31B and for tuning matching networks 32A and 32B. Plasma
control subroutine 370, like the previously described chamber
component subroutines, is invoked by chamber manager subroutine
330A.
[0051] An example of a system that may incorporate some or all of
the subsystems and routines described above would be the ULTIMA.TM.
system, manufactured by APPLIED MATERIALS, INC., of Santa Clara,
Calif., configured to practice the present invention. Further
details of such a system are disclosed in the copending, commonly
assigned U.S. patent application No. 08/679,927, filed Jul. 15,
1996, entitled "Symmetric Tunable Inductively-Coupled HDP-CVD
Reactor," having Fred C. Redeker, Farhad Moghadam, Hirogi Hanawa,
Tetsuya Ishikawa, Dan Maydan, Shijian Li, Brian Lue, Robert Steger,
Yaxin Wang, Manus Wong and Ashok Sinha listed as co-inventors, the
disclosure of which is incorporated herein by reference. The
described system is for exemplary purpose only. It would be a
matter of routine skill for a person of skill in the art to select
an appropriate conventional substrate processing system and
computer control system to implement the present invention.
III. MAGNETIC SHIELDING
[0052] In response to recent trends towards the use of larger
semiconductor wafers, the inventors were tasked with developing
deposition processes for chambers to accommodate 300-mm wafers.
During this development for plasma-based processes, the inventors
were faced with unexpectedly large film uniformity problems. Such
problems were encountered independent of the material being
deposited and were observed, for example, when depositing undoped
silicate glass (USG) or fluorinate silicate glass (FSG).
[0053] Over a period of time, various approaches that had been
successful in improving the process uniformity for 200-mm wafers
were attempted, including adjusting the deposition parameters and
bias characteristics of the process. While various of these
approaches had some effect, they generally affected the process
uniformity only to the degree expected from previous experience
with 200-mm wafers and were unable to correct the anomalous
nonuniformity seen with 300-mm wafers. After excluding these
various approaches, the inventors hypothesized that the presence of
a spurious magnetic field might be adversely affecting the process
characteristics. They therefore sought to confirm this hypothesis
by removing magnetic sources from the vicinity of the process
300-mm process chamber, such magnetic sources generally having a
field strength greater than about 0.5 gauss, which is of the order
of the geomagnetic field. Even after carefully excluding magnetic
sources potentially having producing fields greater than about 0.5
gauss, however, the anomalous nonuniformity nevertheless
persisted.
[0054] After further effort, the inventors therefore theorized that
the anomaly might arise from a magnetic source having a field
strength less than about 0.5 gauss. For the reasons expressed below
on the basis of processing smaller wafers, such field strengths
were believed to be sufficiently small not to have a significant
effect on process characteristics. It was further hypothesized that
the anomaly might result from an ambient magnetic field that could
not be excluded by removing specific field sources from the area of
the 300-mm process chamber. In order to test these theories,
magnetic shielding was use to isolate the process chamber 13 even
from an ambient magnetic field and produced a substantial
improvement, sufficient to account for the anomalous nonuniformity.
The use of magnetic shielding on plasma deposition chambers had
previously been restricted to reducing the effect of purely local
magnetic fields produced by known permanent magnets having field
strengths greater than about 0.5 gauss in the vicinity of the
process chamber 13. The inventors' discovery is that, even in the
absence of locally induced magnetic fields with such strengths,
process uniformity is improved by configuring a
high-magnetic-permeability shield around a nonmagnetic process
chamber. This suggests that the spurious nonuniformity is
manifested with 300-mm wafers for smaller fields than was the case
for smaller-diameter wafers. These field strengths may be caused by
permanent magnets in the vicinity of the chamber or by the earth
itself.
[0055] There are several subsequently developed experimental and
theoretical considerations that support this hypothesis. During a
plasma deposition process, sputter nonuniformity during the
deposition of a layer on a substrate arises from impacts by
electrons in the plasma. The cyclotron radius for an electron
moving in a magnetic field with strength B is given by
r.sub.cyc=mv/eB, where m and e are the electron mass and charge,
and v is the electron's velocity. Under normal deposition
conditions for the plasma chamber 13 described above, the plasma
species includes a mixture of electrons and ionic particles, each
of which has an energy distribution. Electrons with a mean expected
kinetic energy on the order of 5 eV thus have a cyclotron radius on
the order of 100 mm when the field strength is on the order of 0.5
gauss.
[0056] It is thus evident that while the effect on process
uniformity of fields having a strength on the order of 0.5 gauss or
less should be small for wafers with a diameter less than this
cyclotron radius (i.e. for d.sub.wafer100 mm), the effect is
increased for wafers with larger diameters. It is believed this is
why the process exhibited significant nonuniformity for 300-mm
wafers, but was not previously recognized for the smaller 100-mm
and 200-mm wafers. The ionic particles in the plasma have a much
larger mass than the electrons, and their cyclotron radius is
therefore expected to be thousands of times larger. As a result,
they have little effect on the sputter uniformity. While the above
description of the sputter nonuniformity mechanism has focussed on
high-density plasma deposition, for which "high density" is
understood to refer to a plasma with an ion density exceeding
10.sup.11 ions/cm.sup.3, the result that the sputter nonuniformity
mechanism is dominated by electron activity is generally applicable
to any plasma deposition process.
[0057] This mechanism has been confirmed qualitatively with
experiments in which a small magnetization was deliberately
introduced to the plasma. The introduction of a magnetization that
corresponds to what would result from field strengths on the order
of 0.5 gauss was observed to produce noticeable effects on
sputtering uniformity when depositing layers on 300-mm wafers in an
HDP-CVD process chamber. With careful observation, the effect could
also be seen when depositing layers on 200-mm wafers, but was
significantly smaller. It is thus apparent that the influence of
magnetic fields less than about 0.5 gauss should be addressed in
order to maintain desired process uniformity characteristics as
wafer sizes are increased above 200 mm. In terms of the sputter
mechanism described above, attenuation of such small fields results
in an increase in the cyclotron radius of the plasma electrons.
When the mean electron cyclotron radius approximately exceeds the
wafer diameter, the sputter nonuniformity decreases.
[0058] In one embodiment of the invention, attenuation of fields
less than 0.5 gauss within the process chamber 13 is achieved by
shielding the nonmagnetic process chamber 13 with
high-magnetic-permeability .mu. sheet metal. The magnetic
permeability of a metal is understood to refer to the ratio of
magnetic flux induced in the metal to the strength of the magnetic
field that induces that flux. Accordingly, a shield's high
permeability ensures that magnetic flux will be concentrated in the
shield rather than within the nonmagnetic process chamber 13,
thereby achieving the desired attenuation. The shielding enclosure
is preferably constructed to surround as much of the process
chamber 13 as possible, but outside of any RF and/or ground shields
that may be used as part of the substrate processing system 10, so
as not to affect the RF fields within the chamber. As discussed
below, the most effective shielding is one that encloses as much of
the process chamber 13 as possible, but partial shields have also
been observed to have a favorable effect on the process
uniformity.
[0059] When a high-.mu. material is placed in a magnetic field, the
local magnetic flux is diverted to the material, causing the
desired reduction in field strength. Because the extent to which
flux is diverted is proportional to the permeability of the
material, continually greater improvement in shielding results with
an increase in the permeability of the shielding material.
Materials that have suitably high permeabilities to shield the
process chamber 13 from the magnetic fields on the order of 0.5
gauss or less include Mumetal.RTM., Hipernom.RTM., HyMu-80.RTM.,
and Permalloy.RTM., although any material with an appropriately
high permeability may be used. Each of these four commercially
available materials is a soft alloy that has a permeability
relative to the permeability of free space on the order of
10.sup.4-10.sup.6; they comprise approximately 80 at. % Ni and 15
at. % Fe, and are balanced primarily with transition elements such
as copper, molybdenum, or chromium, depending on the specific
recipe used. For example, Mumetal.RTM. consists of 77 at. % Ni, 14
at. % Fe, 5 at. % Cu, and 4 at. % Mo. It has a magnetic
permeability between approximately 6.0.times.10.sup.4 and
2.4.times.10.sup.5, depending on the frequency of the magnetic
field in which it is placed. The Carpenter Hymu-80.RTM. alloy
consists of 80 at. % Ni, 15 at. % Fe, 4.2 at. % Mo, 0.5 at. % Mn,
0.35 at. % Si, and 0.02 at. % C. Permalloy.RTM. consists of 78 at.
% Ni, 16.6 at. % Fe, 4.8 at. % Mo, and 0.9 at. % Mn.
[0060] As will be appreciated by those of skill in the art, such
shielding materials are substantially different from ground or RF
shields that may also be used within the substrate processing
system 10. RF shielding is used to block high-frequency (100 kHz)
interference fields. Such shields are typically constructed of
copper, aluminum, galvanized steel, or conductive rubber, plastic,
or paints. The high electrical conductivity of such materials, with
small (.about.1) permeabilities, makes them suitable for blocking
electromagnetic signals at high frequency. Accordingly, by
positioning the high-permeability shield outside of RF and/or
ground shields, the operation of the substrate processing system 10
is not impeded in any way as a result of field attenuation from
external or ambient fields having a strength0.5 gauss.
[0061] Experimental observations of 300-mm wafers deposited with
layers while high-permeability magnetic shielding is in place
confirm directly that the sputter nonuniformity is decreased.
Careful observations of deposited 200-mm wafers also reveal a
beneficial effect from the shielding, although, as expected, the
effect is less significant than for the larger wafers. In
constructing the high-permeability shield, it is preferable to use
a shielding configuration that affords a complete path for the
field lines; otherwise there is the possibility that the field
lines will exit the material in a place where they will cause
unintended and undesirable interference with the operation of the
substrate processing system 10. The shape and configuration of the
substrate processing system 10 may impose limitations on the extent
to which the process chamber 13 can be enclosed by the magnetic
shield, but in order to attenuate the fields less than about 0.5
gauss as much as possible, it is preferable to enclose as much of
the process chamber 13 as practicable. Less attenuation of such
fields permits more plasma electrons at the low end of their energy
distribution to have a sufficiently small cyclotron radius to
affect sputter uniformity. Even if the configuration of the
substrate processing system 10 prevents complete enclosure of the
process chamber 13, however, partial shielding is still observed to
have a favorable effect on process uniformity because it limits the
portion of the plasma electron energy distribution that can have an
effect.
[0062] An effective shield that limits the escape of flux can be
formed by joining plates of the high-permeability material tightly,
minimizing gaps between the plates. One useful configuration is
illustrated in FIG. 2. A small angled piece 210 of
high-permeability material is positioned to ensure that joined
plates 220 and 230 have some overlap. Such positioning helps ensure
that the magnetic field lines will not leak to the space enclosed
by the shield. The possibility of such undesirable leakage is
further decreased by welding the plates 220 and 230 to the angled
piece 210.
[0063] Those of ordinary skill in the art will realize that the
material used to shield the process chamber may have different
compositions and may be configured differently without departing
from the spirit of the invention. Other variations will also be
apparent to persons of skill in the art. These equivalents and
alternatives are intended to be included within the scope of the
present invention. Therefore, the scope of this invention should
not be limited to the embodiments described, but should instead be
defined by the following claims.
* * * * *