U.S. patent application number 10/092073 was filed with the patent office on 2002-07-18 for three-dimensional memory stacking using anisotropic epoxy interconnections.
Invention is credited to Isaak, Harlan R..
Application Number | 20020094603 10/092073 |
Document ID | / |
Family ID | 24395181 |
Filed Date | 2002-07-18 |
United States Patent
Application |
20020094603 |
Kind Code |
A1 |
Isaak, Harlan R. |
July 18, 2002 |
Three-dimensional memory stacking using anisotropic epoxy
interconnections
Abstract
A chip stack comprising at least two base layers, each of which
includes a base substrate and a first conductive pattern disposed
on the base substrate. The chip stack further comprises at least
one interconnect frame having a second conductive pattern disposed
thereon. The interconnect frame is disposed between the base
layers, with the second conductive pattern being electrically
connected to the first conductive pattern of each of the base
layers via an anisotropic epoxy. Also included in the chip stack
are at least two integrated circuit chips which are electrically
connected to respective ones of the first conductive patterns. One
of the integrated circuit chips is at least partially circumvented
by the interconnect frame and at least partially covered by one of
the base layers. The chip stack further comprises a transposer
layer comprising a transposer substrate having a third conductive
pattern disposed thereon. The first conductive pattern of one of
the base layers is electrically connected to the third conductive
pattern of the transposer layer via an anisotropic epoxy.
Inventors: |
Isaak, Harlan R.; (Costa
Mesa, CA) |
Correspondence
Address: |
STETINA BRUNDA GARRED & BRUCKER
75 ENTERPRISE, SUITE 250
ALISO VIEJO
CA
92656
US
|
Family ID: |
24395181 |
Appl. No.: |
10/092073 |
Filed: |
March 6, 2002 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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10092073 |
Mar 6, 2002 |
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09826621 |
Apr 5, 2001 |
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09826621 |
Apr 5, 2001 |
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09598343 |
Jun 21, 2000 |
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Current U.S.
Class: |
438/107 ;
257/E25.013; 438/111; 438/123 |
Current CPC
Class: |
H05K 2201/10378
20130101; H05K 3/3436 20130101; H01L 2224/16 20130101; H01L
2924/01078 20130101; H05K 1/144 20130101; H05K 1/141 20130101; H01L
2225/0652 20130101; H01L 2225/06586 20130101; H01L 2225/06541
20130101; H05K 3/368 20130101; H01L 2924/01079 20130101; H05K
2201/2018 20130101; H01L 25/0657 20130101; H05K 2201/10674
20130101; H01L 2225/06517 20130101; H01L 2924/01087 20130101; H05K
2201/10515 20130101; H01L 2225/06572 20130101 |
Class at
Publication: |
438/107 ;
438/111; 438/123 |
International
Class: |
H01L 021/44 |
Claims
1. A chip stack comprising: at least two base layers, each of the
base layers comprising: a base substrate; and a first conductive
pattern disposed on the base substrate; a least one interconnect
frame having a second conductive pattern disposed thereon, the
interconnect frame being disposed between the base layers, with the
second conductive pattern being electrically connected to the first
conductive pattern of each of the base layers via an anisotropic
epoxy; and at least two integrated circuit chips electrically
connected to respective ones of the first conductive patterns, one
of the integrated circuit chips being at least partially
circumvented by the interconnect frame and at least partially
covered by one of the base layers.
2. A chip stack of claim 1 further comprising: a transposer layer
comprising: a transposer substrate; and a third conductive pattern
disposed on the transposer substrate; the first conductive pattern
of one of the base layers being electrically connected to the third
conductive pattern via the anisotropic epoxy.
3. The chip stack of claim 2 wherein: the base substrate defines
opposed top and bottom surfaces; and the first conductive pattern
comprises: a first set of base pads disposed on the top surface of
the base substrate; a second set of base pads disposed on the top
surface of the base substrate and electrically connected to
respective ones of the base pads of the first set; and a third set
of base pads disposed on the bottom surface of the base substrate
and electrically connected to respective ones of the base pads of
the second set; the integrated circuit chips being disposed upon
respective ones of the top surfaces of the base substrates and
electrically connected to at least some of the base pads of
respective ones of the first sets, with the base pads of the second
set of one of the base layers being electrically connected to the
second conductive pattern via the anisotropic epoxy, and the base
pads of the third set of one of the base layers being electrically
connected to the second conductive pattern via the anisotropic
epoxy.
4. The chip stack of claim 3 wherein: the interconnect frame
defines opposed top and bottom surfaces; and the second conductive
pattern comprises: a first set of frame pads disposed on the top
surface of the interconnect frame; and a second set of frame pads
disposed on the bottom surface of the interconnect frame and
electrically connected to respective ones of the frame pads of the
first set; the interconnect frame being disposed between the base
layers such that the frame pads of the second set are electrically
connected to respective ones of the base pads of the second set of
one of the base layers via the anisotropic epoxy, and the frame
pads of the first set are electrically connected to respective ones
of the base pads of the third set of one of the base layers via the
anisotropic epoxy.
5. The chip stack of claim 4 wherein: the transposer substrate
defines opposed top and bottom surfaces; and the third conductive
pattern comprises: a first set of transposer pads disposed on the
top surface of the transposer substrate; and a second set of
transposer pads disposed on the bottom surface of the transposer
substrate and electrically connected to respective ones of the
transposer pads of the first set; the base pads of the third set of
one of the base layers being electrically connected to respective
ones of the transposer pads of the first set via the anisotropic
epoxy.
6. The chip stack of claim 5 wherein the transposer pads of the
first set, the frame pads of the first and second sets, and the
base pads of the second and third sets are arranged in identical
patterns.
7. The chip stack of claim 6 wherein: the transposer and base
substrates each have a generally rectangular configuration defining
opposed pairs of longitudinal and lateral peripheral edge segments;
the interconnect frame has a generally rectangular configuration
defining opposed pairs of longitudinal and lateral side sections;
the transposer pads of the first set extend along the longitudinal
and lateral peripheral edge segments of the transposer substrate;
the first and second sets of frame pads extend along the
longitudinal and lateral side sections of the interconnect frame;
and the second and third sets of base pads extend along the
longitudinal and lateral peripheral edge segments of the base
substrate.
8. The chip stack of claim 6 wherein each of the transposer pads of
the second set has a generally spherical configuration.
9. The chip stack of claim 6 wherein: each of the frame pads of the
first set is electrically connected to a respective one of the
frame pads of the second set via a frame feed-through hole; and
each of the base pads of the second set is electrically connected
to a respective one of the base pads of the third set via a base
feed-through hole.
10. The chip stack of claim 9 wherein each of the frame and base
feed-through holes is plugged with a conductive material.
11. The chip stack of claim 6 wherein the integrated circuit chips
each comprise: a body having opposed, generally planar top and
bottom surfaces; and a plurality of conductive contacts disposed on
the bottom surface of the body; the conductive contacts of each of
the integrated circuit chips being electrically connected to
respective ones of the base pads of the first set of a respective
one of the first conductive patterns.
12. The chip stack of claim 11 wherein the transposer pads of the
second set, the base pads of the first set, and the conductive
contacts are arranged in identical patterns.
13. The chip stack of claim 11 further comprising a layer of
flux/underfill disposed between the bottom surface of the body of
each of the integrated circuit chips and respective ones of the top
surfaces of the base substrates.
14. The chip stack of claim 11 wherein the body of each of the
integrated circuit chips and the interconnect frame are sized
relative to each other such that the top surface of the body of the
integrated circuit chip at least partially circumvented by the
interconnect frame does not protrude beyond the top surface
thereof.
15. The chip stack of claim 11 wherein the integrated circuit chips
are each selected from the group consisting of: a BGA device; a
fine pitch BGA device; a CSP device; and a flip chip device.
16. The chip stack of claim 1 further comprising: a second
interconnect frame, the second conductive pattern of which is
electrically connected to the first conductive pattern of one of
the base layers via the anisotropic epoxy such that the second
interconnect frame at least partially circumvents one the
integrated circuit chips; a third base layer, the first conductive
pattern of which is electrically connected to the second conductive
pattern of the second interconnect frame via the anisotropic epoxy
such that the third base layer at least partially covers one of the
integrated circuit chips; and a third integrated circuit chip
electrically connected to the first conductive pattern of the third
base layer.
17. The chip stack of claim 16 further comprising: a multiplicity
of additional interconnect frames, base layers, and integrated
circuit chips; the second conductive pattern of each of the
interconnect frames being electrically connected to the first
conductive patterns of any adjacent pair of base layers via the
anisotropic epoxy, with each of the integrated circuit chips being
electrically connected to the first conductive pattern of a
respective one of the base layers.
18. A method of assembling a chip stack, comprising the steps of:
(a) electrically connecting an integrated circuit chip to a first
conductive pattern of a base layer; (b) electrically connecting a
second conductive pattern of an interconnect frame to the first
conductive pattern via an anisotropic epoxy such the interconnect
frame at least partially circumvents the integrated circuit chip;
(c) electrically connecting another integrated circuit chip to the
first conductive pattern of another base layer; and (d)
electrically connecting the first conductive pattern of one of the
base layers to the second conductive pattern of the interconnect
frame via the anisotropic epoxy such that one of the integrated
circuit chips is disposed between the base layers.
19. The method of claim 18 further comprising the step of: (e)
electrically connecting the first conductive pattern of one of the
base layers to a third conductive pattern of a transposer layer via
the anisotropic epoxy.
20. The method of claim 18 wherein steps (a) and (c) each comprise
applying a layer of flux/underfill to each of the base layers over
portions of the first conductive patterns prior to the electrical
connection of respective ones of the integrated circuit chips
thereto.
21. A method of assembling a chip stack, comprising the steps of:
(a) providing a transposer panel which has opposed surfaces and a
plurality of conductive pads disposed on the opposed surfaces
thereof; (b) providing at least two base panels which each have
opposed surfaces and a plurality of conductive pads disposed on the
opposed surfaces thereof; (c) providing at least one frame panel
which has opposed surfaces and a plurality of conductive pads
disposed on the opposed surfaces thereof; (d) providing a plurality
of integrated circuit chips which each have opposed sides and a
plurality of conductive contacts disposed on one of the sides
thereof; (e) dispensing an anisotropic epoxy on at least some of
the conductive pads of each of the transposer, base, and frame
panels; (f) placing integrated circuit chips upon each of the base
panels such that the conductive contacts of each of the integrated
circuit chips are disposed on at least some of the conductive pads
of respective ones of the base panels; (g) stacking one of the base
panels upon the transposer panel such that at least some of the
conductive pads of the base panel are disposed on at least some of
the conductive pads of the transposer panel; (h) stacking the frame
panel upon the base panel such that at least some of the conductive
pads of the frame panel are disposed on at least some of the
conductive pads of the base panel; and (i) stacking another base
panel upon the frame panel such that at least some of the
conductive pads of the base panel are disposed on at least some of
the conductive pads of the frame panel.
22. The method of claim 21 wherein steps (h) and (i) are repeated
at least once subsequent to step (i).
23. The method of claim 21 further comprising the step of: (j)
placing the chip stack into a heated lamination press to cure the
anisotropic epoxy.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] The present application is a continuation-in-part of U.S.
application Ser. No. 09/598,343 entitled PANEL STACKING OF BGA
DEVICES TO FORM THREE-DIMENSIONAL MODULES, filed Jun. 21, 2000.
STATEMENT RE: FEDERALLY SPONSORED RESEARCH/DEVELOPMENT
[0002] (Not Applicable)
BACKGROUND OF THE INVENTION
[0003] The present invention relates generally to chip stacks, and
more particularly to a chip stack which employs the use of an
anisotropic epoxy as an alternative to solder to facilitate the
interconnection of the various components of the chip stack.
[0004] Multiple techniques are currently employed in the prior art
to increase memory capacity on a printed circuit board. Such
techniques include the use of larger memory chips, if available,
and increasing the size of the circuit board for purposes of
allowing the same to accommodate more memory devices or chips. In
another technique, vertical plug-in boards are used to increase the
height of the circuit board to allow the same to accommodate
additional memory devices or chips.
[0005] Perhaps one of the most commonly used techniques to increase
memory capacity is the stacking of memory devices into a vertical
chip stack, sometimes referred to as 3D packaging or Z-Stacking. In
the Z-Stacking process, from two (2) to as many as eight (8) memory
devices or other integrated circuit (IC) chips are interconnected
in a single component (i.e., chip stack) which is mountable to the
"footprint" typically used for a single package device such as a
packaged chip. The Z-Stacking process has been found to be
volumetrically efficient, with packaged chips in TSOP (thin small
outline package) or LCC (leadless chip carrier) form generally
being considered to be the easiest to use in relation thereto.
Though bare dies or chips may also be used in the Z-Stacking
process, such use tends to make the stacking process more complex
and not well suited to automation.
[0006] In the Z-Stacking process, the IC chips or packaged chips
must, in addition to being formed into a stack, be electrically
interconnected to each other in a desired manner. There is known in
the prior art various different arrangements and techniques for
electrically interconnecting the IC chips or packaged chips within
a stack. Examples of such arrangements and techniques are disclosed
in Applicant's U.S. Pat. Nos. 4,956,694 entitled INTEGRATED CIRCUIT
CHIP STACKING issued Sep. 11, 1990, 5,612,570 entitled CHIP STACK
AND METHOD OF MAKING SAME issued Mar. 18, 1997, and 5,869,353
entitled MODULAR PANEL STACKING PROCESS issued Feb. 9, 1999.
[0007] The various arrangements and techniques described in these
issued patents and other currently pending patent applications of
Applicant have been found to provide chip stacks which are
relatively easy and inexpensive to manufacture, and are well suited
for use in a multitude of differing applications. The chip stack
disclosed in the parent application provides yet a further
alternative arrangement and technique for forming a volumetrically
efficient chip stack. In such chip stack, connections are routed
from the bottom of the chip stack to the perimeter thereof so that
interconnections can be made vertically which allows multiple
integrated circuit chips such as BGA, CSP, fine pitch BGA, or flip
chip devices to be stacked in a manner providing the potential for
significant increases in the production rate of the chip stack and
resultant reductions in the cost thereof.
[0008] In the above-described chip stacks, solder is the
interconnect medium used to form the various interconnections
between the components of the chip stacks. The current trend in
electronics is for more functionality in a small device. This
generally means more I/O's in a smaller package. Interconnecting
these smaller devices in turn requires a denser circuit board or
other interconnection scheme. As the dimensions become smaller, the
use of solder as the interconnect medium becomes increasingly less
attractive. In this respect, smaller sizes require tighter control
over such variables as solder paste and deposition, part
geometries, reflow temperatures, etc. In these smaller devices,
occurrences of solder bridging between neighboring interconnects
becomes more common and difficult to control. Additionally, the
smaller dimensions make post assembly cleaning very difficult. With
regard to such cleaning, CFC's are no longer allowed, with water
washable flux being difficult to remove in small cavities due to
the high surface tension of water. Either no-clean flux must be
used or the chip stack assembly must be designed with cleaning
objectives in mind.
[0009] In the assembly of chip stacks, the interest in lead-free
solders is increasing and eventually will be required in Asia,
Europe, and the United States. The most promising substitutes for
tin/lead solder are based on tin-silver-copper-bismuth combinations
which have melting points in excess of 200.degree. C. These melting
points are substantially higher than traditional tin/lead solders,
which melt at approximately 180.degree. C. These elevated melting
points will require higher soldering temperatures. For packaged
chip and flip chip assemblies, the higher melting points of
lead-free solders may prove to be a concern, since these devices
may not be able to withstand repeated elevated reflow temperatures.
Further, the higher temperatures negate the use of a high
temperature solder for subassemblies combined with a low
temperature solder for attachment to a mother board.
[0010] The use of solder as an interconnect medium creates further
challenges in relation to the three-dimensional stacking of
devices. The rework of a stacked assembly becomes difficult,
tedious, and labor intensive. Accordingly, the first pass yield
must be high. Solder bridging or solder opens cannot be tolerated
in such chip stacks.
[0011] The present invention eliminates many of the problems and
challenges arising as a result of the use of solder as the
interconnect medium by providing a chip stack and method of
stacking integrated circuit (IC) devices using an anisotropic epoxy
for the interconnections between the layers as an alternative to
solder. Anisotropic epoxy consists of a fast cure epoxy containing
small conductive particles uniformly dispersed within the epoxy
component of the material. The density of particles is limited to
the amount that does not cause contact from particle to particle.
The epoxy may be in the form of a liquid or film. Typically, gold
plated nickel particles of uniform size anywhere from five to ten
microns in diameter are used. The liquid is dispensed or film
placed between opposing conductive pads, with heat and pressure
thereafter being applied. With pressure, particles are trapped
between the conductive pads, thus forming a conductive conduit
between the pads. The heat then cures the epoxy which holds the
structure (i.e., layers) together. If the pads are nickel/gold
plated, the particles form a pressure contact between the pads. If
the pads are plated with a tin based metal and sufficient heat is
applied, the particles form a metallugical connection between the
pads. By controlling the size of the particles, bridging between
adjacent pads can be eliminated, thus allowing for the achievement
of fine pitch between the pads. Since flux is not used, post
assembly cleaning is not required. Also, the composition of the
particles does not include any toxic metal such as lead.
[0012] The processing window associated with the use of an
anisotropic epoxy as the interconnect medium in the chip stack is
very tolerant, with process temperatures being below 200.degree. C.
Once cured, the anisotropic epoxy does not reflow at temperatures
above 200.degree. C. Chip stacks assembled through the use of the
anisotropic epoxy can be easily made using a panel format, then
separating the stacks using standard PCB routing procedures. For
example, typical panels 4 inches by 51/2 inches with multiple stack
sites (16 or more on a panel) may be processed then stacked in a
stacking fixture, and cured with heat and pressure as provided by a
lamination press. The panels can easily be designed with multiple
devices per layer for each resultant chip stack. Multiple devices
such as BGA's, TSOP's, or bare die can be intermixed and placed on
one base substrate. All interconnects between devices are made on
the base substrate, with the I/O's for that layer being terminated
in conductive pads around the perimeter of the base substrate as
with a single device. The stacking then proceeds as a single device
on a layer. These and other advantages of the present invention
will be discussed in more detail below.
BRIEF SUMMARY OF THE INVENTION
[0013] In accordance with the present invention, there is provided
a chip stack comprising at least two base layers (i.e., an upper
base layer and a lower base layer). Each of the base layers
includes a base substrate having a first conductive pattern
disposed thereon. The chip stack further comprises at least one
interconnect frame having a second conductive pattern disposed
thereon. The interconnect frame is disposed between the upper and
lower base layers, with the second conductive pattern being
electrically connected to the first conductive pattern of each of
the base layers via an anisotropic epoxy. In addition to the base
layers and interconnect frame, the chip stack comprises at least
two integrated circuit chips which are electrically connected to
respective ones of the first conductive patterns via the
anisotropic epoxy. The integrated circuit chip electrically
connected to the first conductive pattern of the lower base layer
is at least partially circumvented by the interconnect frame and at
least partially covered by the upper base layer. The chip stack
further preferably comprises a transposer layer which includes a
transposer substrate having a third conductive pattern disposed
thereon. The first conductive pattern of the lower base layer is
electrically connected to the third conductive pattern of the
transposer layer via the anisotropic epoxy.
[0014] In the present chip stack, the base substrate of each of the
base layers defines opposed, generally planar top and bottom
surfaces. The first conductive pattern itself comprises first and
second sets of base pads which are disposed on the top surface of
the base substrate, with the base pads of the second set being
electrically connected to respective ones of the base pads of the
first set via conductive traces. In addition to the first and
second sets of base pads, the first conductive pattern includes a
third set of base pads disposed on the bottom surface of the base
substrate and electrically connected to respective ones of the base
pads of the second set. More particularly, each of the base pads of
the second set is preferably electrically connected to a respective
one of the base pads of the third set via a base feed-through hole.
The base feed-through hole may be plugged with a conductive
material selected from the group consisting of nickel, gold, tin,
silver epoxy, and combinations thereof. The integrated circuit
chips are disposed upon respective ones of the top surfaces of the
base substrates and electrically connected to at least some of the
base pads of respective ones of the first sets via solder or the
anisotropic epoxy. Additionally, the base pads of the second set of
the lower base layer are electrically connected to the second
conductive pattern of the interconnect frame via the anisotropic
epoxy, as are the base pads of the third set of the upper base
layer.
[0015] The interconnect frame of the chip stack itself defines
opposed, generally planar top and bottom surfaces, with the second
conductive pattern comprising first and second sets of frame pads
disposed on respective ones of the top and bottom surfaces. Each of
the frame pads of the first set is electrically connected to a
respective one of the frame pads of the second set via a frame
feed-through hole which also may be plugged with a conductive
material preferably selected from the group consisting of nickel,
gold, tin, silver epoxy, and combinations thereof. The interconnect
frame is preferably disposed between the upper and lower base
layers such that the frame pads of the second set are electrically
connected to respective ones of the base pads of the second set of
the lower base layer via the anisotropic epoxy, with the frame pads
of the first set being electrically connected to respective ones of
the base pads of the third set of the upper base layer via the
anisotropic epoxy.
[0016] The transposer substrate of the present chip stack also
defines opposed, generally planar top and bottom surfaces, with the
third conductive pattern comprising first and second sets of
transposer pads disposed on respective ones of the top and bottom
surface of the transposer substrate. The transposer pads of the
first set are electrically connected to respective ones of the
transposer pads of the second set. Additionally, the base pads of
the third set of the lower base layer are electrically connected to
respective ones of the transposer pads of the first set via the
anisotropic epoxy.
[0017] In the present chip stack, the transposer pads of the first
set, the frame pads of the first and second sets, and the base pads
of the second and third sets are preferably arranged identical
patterns. Additionally, the transposer and base substrates each
preferably have a generally rectangular configuration defining
opposed pairs of longitudinal and lateral peripheral edge segments.
The interconnect frame itself preferably has a generally
rectangular configuration defining opposed pairs of longitudinal
and lateral side sections. The transposer pads of the first set
extend along the longitudinal and lateral peripheral edge segments
of the transposer substrate. Similarly, the first and second sets
of frame pads extend along the longitudinal and lateral side
sections of the interconnect frame, with the second and third sets
of base pads extending along the longitudinal and lateral
peripheral edge segments of the base substrate. Each of the
transposer pads of the second set preferably has a generally
spherical configuration.
[0018] Each of the integrated circuit chips of the present chip
stack preferably comprises a body having opposed, generally planar
top and bottom surfaces, and a plurality of conductive contacts
disposed on the bottom surface of the body. The conductive contacts
of each of the integrated circuit chips are electrically connected
to respective ones of the base pads of the first set of a
respective one of the first conductive patterns. The electrical
connection of the integrated circuit chips to respective ones of
the first conductive patterns may be facilitated through the use of
solder or through the use of the anisotropic epoxy. The transposer
pads of the second set, the base pads of the first set, and the
conductive contacts are themselves preferably arranged in identical
patterns. When solder is used as the interconnect medium for the
integrated circuit chips, the chip stack may further comprise a
layer of flux/underfill (also referred to as a "no flow-fluxing
underfill") disposed between the bottom surface of the body of each
of the integrated circuit chips and respective ones of the top
surfaces of the base substrates. Each layer of flux/underfill may
be spread over the base pads of the first set of a respective one
of the first conductive patterns. The body of each of the
integrated circuit chips and the interconnect frame are preferably
sized relative to each other such that the top surface of the body
of the integrated circuit chip electrically connected to the lower
base panel and at least partially circumvented by the interconnect
frame does not protrude beyond the top surface thereof.
[0019] The integrated circuit chips are preferably selected from
the group consisting of a CSP (Chip Scale Package) such as a BGA
(ball grid array) device, a fine pitch BGA device, and a flip chip
device. However, the integrated circuit chips may also comprise LP
(leaded plastic) devices or packages such as TSOP (thin small
outline package) and TQFP devices. The integrated circuit chips may
comprise bare die devices as well. Further, the transposer and base
substrates are each preferably fabricated from a polyamide or other
suitable circuit board material which may be as thin as about 0.010
inches.
[0020] Those of ordinary skill in the art will recognize that a
chip stack of the present invention may be assembled to include
more than two base layers, more than one interconnect frame, and
more than two integrated circuit chips. In this respect, a
multiplicity of additional interconnect frames, base layers, and
integrated circuit chips may be included in the chip stack, with
the second conductive pattern of each of the interconnect frames
being electrically connected to the first conductive patterns of
any adjacent pair of base layers via the anisotropic epoxy, and
each of the integrated circuit chips being electrically connected
to the first conductive pattern of a respective one of the base
layers. Additionally, the chip stack of the present invention may
be assembled to include differing types of integrated circuit
chips, i.e., an intermix of different types of packaged chips and
bare die devices in any combination.
[0021] Further in accordance with the present invention, there is
provided a method of assembling a chip stack. The method comprises
the initial step of electrically connecting an integrated circuit
chip to a first conductive pattern of a base layer. The integrated
circuit chip may be electrically connected to the base layer either
through the use of solder or the anisotropic epoxy. Thereafter, a
second conductive pattern of an interconnect frame is electrically
connected to the first conductive pattern via the anisotropic epoxy
such that the interconnect frame at least partially circumvents the
integrated circuit chip. Another integrated circuit chip is then
electrically connected to the first conductive pattern of another
base layer. The first conductive pattern of one of the base layers
is then electrically connected to the second conductive pattern of
the interconnect frame via the anisotropic epoxy such that one of
the integrated circuit chips is disposed between the base layers.
The method may further comprise the step of electrically connecting
the first conductive pattern of one of the base layers to a third
conductive pattern of a transposer layer via the anisotropic epoxy.
In the present assembly method, a layer of flux/underfill may be
applied to (i.e., spread over) each of the base layers over
portions of the first conductive patterns prior to the electrical
connection of respective ones of the integrated circuit chips
thereto.
[0022] Still further in accordance with the present invention,
there is provided a method of assembling a chip stack which
comprises the initial steps of providing a transposer panel, at
least two base panels, and at least one frame panel which each have
opposed surfaces and a plurality of conductive pads disposed on the
opposed surfaces thereof. A plurality of integrated circuit chips
are also provided which each have opposed sides and include
conductive contacts disposed on one of the sides thereof. In this
assembly method, an anisotropic epoxy is dispensed on at least some
of the conductive pads of each of the transposer, base, and frame
panels. Integrated circuit chips are then placed upon each of the
base panels such that the conductive contacts of each of the
integrated circuit chips are disposed on at least some of the
conductive pads of respective ones of the base panels. Thereafter,
one of the base panels is stacked upon the transposer panel such
that at least some of the conductive pads of the base panel are
disposed on at least some of the conductive pads of the transposer
panel. The frame panel is then stacked upon the base panel such
that at least some of the conductive pads of the frame panel are
disposed on at least some of the conductive pads of the base panel.
Another base panel is then stacked upon the frame panel such that
at least some of the conductive pads of the base panel are disposed
on at least some of the conductive of the frame panel.
[0023] The assembly method further comprises the step of placing
the chip stack into a heated lamination press to cure the
anisotropic epoxy, thereby securing the base panels, frame
panel(s), and transposer panel to each other. The curing process
also facilitates the bonding of the conductive contacts of the
integrated circuit chips to the conductive pads of respective ones
of base panels in the event the anisotropic epoxy is employed as
the interconnect medium therebetween. As indicated above, solder
may alternatively be used as the interconnect medium between the
integrated circuit chips and the base panels. If solder is used as
the interconnect medium, the integrated circuit chips 70 will
typically be pre-attached to the base panels through a solder
reflow process. The assembly method may further comprise the steps
of stacking spacer sheets between one of the base panels and the
transposer panel, and between the frame panel and each of the base
panels. The spacer sheets each have opposed surfaces and a
plurality of openings disposed therein. When stacked between the
base and transposer panels and between the frame and base panels,
the openings of the spacer sheets are aligned with the conductive
pads of such panels.
BRIEF DESCRIPTION OF THE DRAWINGS
[0024] These, as well as other features of the present invention,
will become more apparent upon reference to the drawings
wherein:
[0025] FIG. 1 is a top perspective view of a chip stack constructed
in accordance with the present invention;
[0026] FIG. 2 is a cross-sectional view of the chip stack taken
along line 2-2 of FIG. 1;
[0027] FIG. 3 is an enlargement of the encircled region 3 shown in
FIG. 2;
[0028] FIG. 4 is an exploded view of the chip stack shown in FIG.
1;
[0029] FIG. 5 is an exploded view of the various panels which are
stacked upon each other in accordance with a preferred method of
assembling the chip stack of the present invention;
[0030] FIG. 6 is a partial cross-sectional view of the panels shown
in FIG. 5 as stacked upon each other prior to an epoxy curing step
of the present assembly method;
[0031] FIG. 7 is an enlargement of the encircled region 7 shown in
FIG. 8; and
[0032] FIG. 8 is partial cross-sectional view of the panels shown
in FIG. 5 as stacked upon each other subsequent to the completion
of the epoxy curing step of the present assembly method.
DETAILED DESCRIPTION OF THE INVENTION
[0033] Referring now to the drawings wherein the showings are for
purposes of illustrating a preferred embodiment of the present
invention only, and not for purposes of limiting the same, FIG. 1
perspectively illustrates a chip stack 10 assembled in accordance
with the present invention. The chip stack 10 comprises at least
two identically configured base layers 12. Each of the base layers
12 itself comprises a rectangularly configured base substrate 14
which defines a generally planar top surface 16, a generally planar
bottom surface 18, an opposed pair of longitudinal peripheral edge
segments 20, and an opposed pair of lateral peripheral edge
segments 22.
[0034] Disposed on the base substrate 14 of each base layer 12 is a
first conductive pattern which itself preferably comprises a first
set of base pads 24 and a second set of base pads 26 which are each
disposed on the top surface 16 of the base substrate 14. The base
pads 24 of the first set are preferably arranged in a generally
rectangular pattern or array in the central portion of the base
substrate 14, with the base pads 26 of the second set extending
linearly along the longitudinal and lateral peripheral edge
segments 20, 22 of the base substrate 14. The base pads 24 of the
first set are electrically connected to respective ones of the base
pads 26 of the second set via conductive traces 28. In addition to
the base pads 24, 26 of the first and second sets, the first
conductive pattern of each base layer 12 comprises a third set of
base pads 30 which is disposed on the bottom surface 18 of the base
substrate 14. The base pads 30 of the third set are preferably
arranged in an identical pattern to the base pads 26 of the second
set, and extend linearly along the longitudinal and lateral
peripheral edge segments 20, 22 of the base substrate 14 such that
each of the base pads 30 of the third set is aligned with and
electrically connected to a respective one of the base pads 26 of
the second set.
[0035] As is best seen in FIGS. 2 and 3, each of the base pads 26
of the second set is electrically connected to a respective one of
the base pads 30 of the third set via a base feed-through hole 32.
Each base feed-through hole 32 may be plugged with a conductive
material or may be left open. If the holes 32 are plugged, the
conductive material is preferably selected from the group
consisting of nickel, gold, tin, silver epoxy, and combinations
thereof. The base pads 26, 30 of the second and third sets, as well
as the base pads 24 of the first set, may each be rectangular,
oval, or circular in shape. In this respect, each base feed-through
hole 32 preferably extends axially between each corresponding,
coaxially aligned pair of the base pads 26, 30 of the second and
third sets.
[0036] In addition to the base layers 12, the chip stack 10 of the
present invention comprises at least one rectangularly configured
interconnect frame 34. The interconnect frame 34 defines a
generally planar top surface 36, a generally planar bottom surface
38, an opposed pair of longitudinal side sections 40, and an
opposed pair of lateral side sections 42. Disposed on the
interconnect frame 34 is a second conductive pattern which itself
preferably comprises a first set of frame pads 44 disposed on the
top surface 36, and a second set of frame pads 46 disposed on the
bottom surface 38. The frame pads 44, 46 of the first and second
sets are preferably arranged in patterns which are identical to
each other, and to the patterns of the second and third sets of
base pads 26, 30 of each of the base layers 12. In this respect,
the frame pads 44, 46 of the first and second sets each extend
linearly along the longitudinal and lateral side sections 40, 42 of
the interconnect frame 34, with each of the frame pads 44 of the
first set being aligned with and electrically connected to a
respective one of the frame pads 46 of the second set. As best seen
in FIG. 3, similar to the electrical connection of the base pads
26, 30 of the second and third sets to each other, the electrical
connection of each of the frame pads 44 of the first set to a
respective one of the frame pads 46 of the second set is preferably
accomplished via a frame feed-through hole 48 which also may be
plugged with a conductive material or may be left open. If the
holes 48 are plugged, the conductive material is preferably
selected from the same group used as the conductive material to
plug the base feed-through holes 32, i.e., nickel, gold, tin,
silver epoxy, and combinations thereof. Each of the frame
feed-through holes 48 preferably extends axially between a
corresponding, coaxially aligned pair of the frame pads 44, 46 of
the first and second sets, with the plugging of the frame
feed-through holes 48 preferably occurring prior to the surface
plating of the frame pads 44, 46 of the first and second sets to
respective ones of the top and bottom surfaces 36, 38 of the
interconnect frame 34.
[0037] In the chip stack 10, the interconnect frame 34 is disposed
between the base layers 12, with the second conductive pattern of
the interconnect frame 34 being electrically connected to the first
conductive pattern of each of the base layers 12. More
particularly, the frame pads 46 of the second set are electrically
connected to respective ones of the base pads 26 of the second set
of one of the base layers 12 (i.e., the base layer 12 immediately
below the interconnect frame 34 in the chip stack 10), with the
frame pads 44 of the first set being electrically connected to
respective ones of the base pads 30 of the third set of one of the
base layers 12 (i.e., the base layer 12 immediately above the
interconnect frame 34 in the chip stack 10). Due to the base pads
26, 30 of the second and third sets and the frame pads 44, 46 of
the first and second sets all being arranged in identical patterns,
each coaxially aligned pair of frame pads 44, 46 of the first and
second sets is itself coaxially aligned with a coaxially aligned
set of base pads 26, 30 of the second and third sets of each of the
adjacent base layers 12.
[0038] As best seen in FIGS. 2 and 3, the electrical connection of
the second conductive pattern of the interconnect frame 34 to the
first conductive pattern of each of the adjacent base layers 12 is
preferably facilitated via an anisotropic epoxy 49. The anisotropic
epoxy 49 comprises a fast cure epoxy component 50 which contains
small conductive particles 51 uniformly dispersed therewithin. As
indicated above, the density of the particles 51 is limited to the
amount that does not cause contact therebetween. The epoxy
component 50 may be in the form of a liquid or film. Typically,
gold plated nickel particles 51 of uniform size anywhere from 5 to
10 microns in diameter are used in the anisotropic epoxy 49. The
composition of these particles 51 does not include any toxic
materials (e.g., lead). As will be discussed in more detail below,
the anisotropic epoxy 49 is dispensed (if a liquid) or placed (if a
film) between respective opposing, coaxially aligned sets of the
base and frame pads 26, 30, 44, 46, with heat and pressure
thereafter being applied. With pressure, the particles 51 are
trapped between a respective opposing set of the base and frame
pads 26, 30, 44, 46, thus forming a conductive conduit
therebetween. The heat cures the epoxy component 50, thereby
maintaining the base layers 12 in attachment to the interconnect
frame 34. As will also be discussed below, the interconnect frame
34 is prepared for use in the chip stack 10 by forming generally
semi-spherically shaped bumps of the anisotropic epoxy 49 on each
of the frame pads 44, 46 of the first and second sets.
[0039] The chip stack 10 of the present invention further
preferably comprises a transposer layer 52. The transposer layer 52
itself comprises a rectangularly configured transposer substrate 54
which defines a generally planar top surface 56, a generally planar
bottom surface 58, an opposed pair of longitudinal peripheral edge
segments 60, and an opposed pair of lateral peripheral edge
segments 62. Disposed on the transposer substrate 54 is a third
conductive pattern. The third conductive pattern comprises a first
set of transposer pads 64 which are disposed on the top surface 56
of the transposer substrate 54, and a second set of transposer pads
66 which are disposed on the bottom surface 58 thereof. The
transposer pads 64 of the first set are electrically connected to
respective ones of the transposer pads 66 of the second set via
conductive traces. The transposer pads 64 of the first set are
preferably arranged in a pattern which is identical to the patterns
of the second and third sets of base pads 26, 30 and the first and
second sets of frame pads 44, 46. In this respect, the transposer
pads 64 of the first set extend linearly along the longitudinal and
lateral peripheral edge segments 60, 62 of the transposer substrate
54. The transposer pads 66 of the second set are themselves
preferably arranged in a generally rectangular pattern or array in
the central portion of the bottom surface 58 of the transposer
substrate 54, with the pattern of the transposer pads 66 of the
second set preferably being identical to the pattern of the base
pads 24 of the first set of each of the base layers 12.
[0040] In the preferred embodiment, the transposer layer 52 is
prepared for use in the chip stack 10 by forming generally
spherically shaped solder balls 68 on each of the transposer pads
66 of the second set. These solder balls 68 are preferably formed
by stencil printing solder paste onto each of the transposer pads
66 of the second set, and thereafter reflowing the solder paste to
form the solder balls 68. The aperture in the stencil used to form
the solder balls 68 is typically larger than each of the transposer
pads 66 and thick enough to deposit sufficient solder to form the
solder balls 68. As seen in FIG. 5, the transposer layer 52 is also
prepared for use in the chip stack 10 by forming generally
semi-spherically shaped bumps of the anisotropic epoxy 49 on each
of the transposer pads 64 of the first set. These bumps of the
anisotropic epoxy 49 are preferably formed in the same manner
previously described in relation to the formation of the bumps of
the anisotropic epoxy 49 on the frame pads 44, 46 of the first and
second sets.
[0041] In the chip stack 10, the first conductive pattern of one of
the base layers 12 (i.e., the lowermost base layer 12 in the chip
stack 10) is electrically connected to the third conductive pattern
of the transposer layer 52. More particularly, each of the base
pads 30 of the third set of the lowermost base layer 12 is
electrically connected to a respective one of the transposer pads
64 of the first set. Due to the base pads 30 of the third set and
the transposer pads 64 of the first set being arranged in identical
patterns, each of the base pads 30 of third set is coaxially
alignable with a respective one of the transposer pads 64 of the
first set, with the electrical connection therebetween preferably
being facilitated via the anisotropic epoxy 49 in the same manner
previously described in relation to the use of the anisotropic
epoxy 49 to secure and electrically connect the interconnect frame
34 to the base substrates 14 of the base layers 12.
[0042] In the present chip stack 10, the base pads 24, 26, 30 of
the first, second and third sets, the conductive traces 28, the
frame pads 44, 46 of the first and second sets, and the transposer
pads 64, 66 of the first and second sets are each preferably
fabricated from very thin copper having a thickness in the range of
from about five microns to about twenty-five microns through the
use of conventional etching techniques. Advantageously, the use of
thin copper for the various pads and traces 28 allows for etching
line widths and spacings down to a pitch of about 4 mils which
substantially increases the routing density on each of the base
layers 12, as well as the transposer layer 52. Due to the preferred
use of the anisotropic epoxy 49 to facilitate the electrical
interconnection between the interconnect frame 34 and the base
layers 12, and between the lowermost base layer 12 and the
transposer layer 52, the base pads 26, 30, the frame pads 44, 46,
and the transposer pads 64 may be nickel/gold plated or plated with
a tin based metal. If such pads are nickel/gold plated, the
particles 51 of the anisotropic epoxy 49 will form a pressure
contact therebetween. If, alternatively, such pads are plated with
a tin based metal and sufficient heat is applied, the particles 51
will form a metallurgical connection therebetween.
[0043] Additionally, the base substrate 14, the interconnect frame
34, and the transposer substrate 54 are each preferably fabricated
from either FR-4, polyamide, or some other suitable material which
can easily be routed. As indicated above, all of the base
feed-through holes 32 and frame feed-through holes 48 may be
plugged with a conductive material prior to the surface plating
procedure used to form the base pads 24, 26, 30 of the first,
second and third sets, and the frame pads 44, 46 of the first and
second sets. The material used to form each base substrate 14
and/or the transposer substrate 54 may be as thin as about 0.010
inches or may be a thicker multilayer structure.
[0044] The chip stack 10 of the present invention further comprises
at least two identically configured integrated circuit chips 70
which are electrically connected to respective ones of the first
conductive patterns of the base layers 12. Each of the integrated
circuit chips 70 preferably comprises a rectangularly configured
body 72 defining a generally planar top surface 74, a generally
planar bottom surface 76, an opposed pair of longitudinal sides 78,
and an opposed pair of lateral sides 80. Disposed on the bottom
surface 76 of the body 72 are a plurality of generally
seme-spherically shaped conductive contacts 82 which are preferably
arranged in a pattern identical to the patterns of the base pads 24
of the first set and the transposer pads 66 of the second set. The
conductive contacts 82 of each of the integrated circuit chips 70
are electrically connected to respective ones of the base pads 24
of the first set of a respective one of the first conductive
patterns of the base layers 12. Due to the conductive contacts 82
and base pads 24 of each of the first sets being arranged in
identical patterns, the conductive contacts 82 of each of the
integrated circuit chips 70 are coaxially alignable with respective
ones of the base pads 24 of the corresponding first set.
[0045] The electrical connection of the conductive contacts 82 of
each integrated circuit chip 70 to respective ones of the base pads
24 of the first set of a respective one of the first conductive
patterns may be accomplished through the use of the anisotropic
epoxy 49 or alternatively through the use of solder. If the
anisotropic epoxy 49 is utilized, the same is preferably spread
over the conductive contacts 82 and/or the base pads 24 of the
corresponding first set. Similarly, solder is preferably
pre-applied to each of the conductive contacts 82 if used as the
interconnect medium. In the chip stack 10, each of the integrated
circuit chips 70 is preferably a CSP (Chip Scale Package) such as a
BGA (ball grid array) device. The integrated circuit chips 70 may
each alternatively comprise a fine pitch BGA device or a flip chip
device. Still further, the integrated circuit chips 70 may each
comprise an LP (leaded plastic) package such as a TSOP (thin small
outline package) device or a TQFP device. Still further, the
integrated circuit chip 70 may each comprise a bare die device.
Those of ordinary skill in the art will recognize that the chip
stack 10 of the present invention may be assembled to include an
intermix of integrated circuit chips 70 of differing types.
[0046] In the present chip stack 10, a layer 84 of flux/underfill
may be disposed between the bottom surface 76 of the body 72 of
each of the integrated circuit chips 70 and respective ones of the
top surfaces 16 of the base substrates 14. Each layer 84 of the
flux/underfill is preferably spread over the base pads 24 of the
first set of a respective one of the first conductive patterns of
the base layers 12. Each layer 84 substantially encapsulates the
conductive contacts 82 of the corresponding integrated circuit chip
70 when the same is electrically connected to the first conductive
pattern of a respective one of the base layers 12. The layer 84 of
flux/underfill will only be used in relation to each integrated
circuit chip 70 in the chip stack 10 when solder is employed as the
interconnect medium between the integrated circuit chip 70 and
respective ones of the first conductive patterns of the base layers
12.
[0047] Prior to the attachment of the integrated circuit chip 70 to
a respective base layer 12, a bakeout cycle is required to drive
out the moisture in the base layer 12 and the corresponding
integrated circuit chip 70. A cycle of approximately eight hours at
about 125.degree. Celsius is desirable, which is followed by
storage in a dry nitrogen atmosphere until use. If solder is used
as the interconnect medium, the first step in the attachment of the
integrated circuit chip 70 to the corresponding base layer 12 is
the precise deposition of the layer 84 of an appropriate
flux/underfill material over the base pads 24 of the corresponding
first set. The integrated circuit chip 70 is then placed over the
pad area, squeezing out the flux/underfill material of the layer 84
to the longitudinal and lateral sides 78, 80 of the body 72 and
seating the conductive contacts 82 onto respective ones of the base
pads 24 of the corresponding first set. If done properly, the layer
84 of the flux/underfill material, when cured, will have no voids
or minimum voids. The base layer 12 having the integrated circuit
chip 70 positioned thereupon in the above-described manner is then
run through a solder reflow cycle with no dwelling time at an
intermediate temperature of approximately 150.degree. Celsius. A
post cure cycle to complete the polymerization of the layer 84 of
the flux/underfill material may be required depending on the
particular flux/underfill material used in the layer 84. At this
juncture, the base layer 12 having the integrated circuit chip 70
electrically connected thereto may be electrically tested.
[0048] In the prior art, the standard approach for the attachment
or electrical connection of the conductive contacts of a BGA device
to an attachment or pad site is to first flux the pad site or
conductive contacts of the BGA device, place the BGA device on the
pad site in the proper orientation, reflow the solder pre-applied
to the conductive contacts of the BGA device to facilitate the
electrical connection to the pad site, clean, then underfill and
cure. The cleaning step typically requires considerable time since
the gap under the bottom surface of the body of the BGA device is
very small and very difficult to penetrate with standard cleaning
methods. Also, the removal of the cleaning fluid (which is
generally water) requires long bakeout times.
[0049] The underfill of an epoxy between the bottom surface of the
body of the BGA device and the top surface of the substrate having
the pad site thereon is a relatively easy procedure, but is very
slow. If a no-clean flux is used for attachment, the residue from
the flux typically becomes entrapped within the epoxy underfill and
may cause corrosion problems. A subsequent solder reflow process to
facilitate the attachment of the chip stack to a main printed
circuit board (PCB) often causes the residue flux to vaporize which
exerts pressure on the solder joints and could delaminate the
structure. Most underfill materials become very hard (i.e., greater
than ninety shore D) and are cured at a temperature of less than
about 180.degree. Celsius. The solder is solid at this temperature
and the underfill encases the solder with no room for expansion.
The solder from the conductive contacts of the BGA device expands
when molten again, thus exerting pressure which can delaminate the
structure. If the chip stack is not subjected to subsequent reflow
temperatures when completed, there is no problem. However, the chip
stack must be able to withstand the subsequent reflow
temperature.
[0050] The flux/underfill material used for the layer 84 provides
both flux and underfill properties with one formulation. As the
temperature rises during the solder reflow proces, the flux
characteristics of the material aid in the solder process, with
extended exposure to the peak solder reflow temperature beginning
the polymerization process of the underfill portion of the
material. The flux is incorporated into the underfill, thus
becoming one compatible material which is cured above the melting
point of solder. Thus, there is room within the encased solder for
expansion at the reflow temperature. No cleaning steps are
required, though careful dispensing of the correct volume and
accurate placement of the integrated circuit chip 70 upon its
corresponding base layer 12 is critical.
[0051] On the other hand, if the anisotropic epoxy 49 is used as
the interconnect medium as an alternative to solder for the
electrical connection of the integrated circuit chips 70 to
respective ones of the base layers 12, the layer 84 of
flux/underfill will not be included. Rather, the anisotropic epoxy
49 will preferably be spread over the base pads 24 of the first set
of each of the first conductive patterns of each of the base layers
12. Each integrated circuit chip 70 is then placed over a
corresponding pad area, with the conductive contacts 82 thereof
being seated into the anisotropic epoxy 49 applied to the base pads
24 of the corresponding first set.
[0052] The complete chip stack 10 shown in FIG. 1 includes a
transposer layer 52, two base layers 12, one interconnect frame 34,
and two integrated circuit chips 70. The first conductive pattern
of the lowermost base layer 12 is electrically connected to the
third conductive pattern of the transposer layer 52 via the
anisotropic epoxy 49 in the above-described manner. Additionally,
the interconnect frame 34 is disposed or positioned between the
adjacent pair of base layers 12, with the second conductive pattern
of the interconnect frame 34 being electrically connected to the
first conductive patterns of such adjacent pair of base layers 12
via the anisotropic epoxy 49 in the above-described manner. Since
the conductive contacts 82 of each of the integrated circuit chips
70 are electrically connected to respective ones of the base pads
24 of the first set of respective ones of the first conductive
patterns, the lower integrated circuit chip 70 is disposed between
the adjacent pair of base layers 12 and circumvented by the
interconnect frame 34. Thus, the bodies 72 of the integrated
circuit chips 70 and the interconnect frame 34 are preferably sized
relative to each other such that the top surface 74 of the body 72
of the integrated circuit chip 70 which is circumvented by the
interconnect frame 34 does not protrude beyond the top surface 36
thereof.
[0053] As also indicated above, all the various electrical
connections within the chip stack 10, with the possible exception
of the electrical connection of the integrated circuit chips 70 to
the base layers 12, are facilitated via the anisotropic epoxy 49.
The solder balls 68 form a ball grid array on the bottom of the
chip stack 10 which is specifically suited for facilitating the
attachment of the chip stack 10 to a printed circuit board (PCB).
Those of ordinary skill in the art will recognize that the chip
stack 10 may be assembled to include greater than two base layers
12, one interconnect frame 34, and two integrated circuit chips
70.
[0054] Having thus described the structural attributes of the chip
stack 10, the preferred method of assembling the same will now be
described with specific reference to FIGS. 5-8. In accordance with
the present invention, multiple chip stacks 10 may be concurrently
assembled through the use of a transposer panel 86, at least two
base panels 88, at least one frame panel 90, and a plurality of
integrated circuit chips 70. The transposer panel 86 is formed to
include multiple groups of the first and second sets of transposer
pads 64, 66 with such groups being formed on the transposer panel
86 in spaced relation to each other. Similarly, each of the base
panels 88 is formed to include multiple groups of the first, second
and third sets of base pads 24, 26, 30, with the frame panels 90
each being formed to include multiple groups of the first and
second sets of frame pads 44, 46. As indicated above, the
transposer panel 86 is prepared such that the transposer pads 64 of
the first set of each group have the bumps on the anisotropic epoxy
49 formed thereon, with the transposer pads 66 of the second set of
each group having the solder balls 68 formed thereon. Similarly,
each of the frame panels 90 is prepared such that the first and
second sets of frame pads 44, 46 of each group have the bumps of
the anisotropic epoxy 49 formed thereon.
[0055] In a preferred assembly process, the integrated circuit
chips 70 are electrically connected to respective ones of each of
the first sets of base pads 24 included on each of the base panels
88. Such electrical connection is accomplished through the use of
solder or the anisotropic epoxy 49 in the above-described manner.
Subsequent to the pre-attachment of the integrated circuit chips 70
to the base panels 88, bumps of the anisotropic epoxy 49 are
applied to each of the transposer pads 64 of the first set of the
transposer panel 86, and to each of the frame pads 44, 46 of the
first and second sets of the frame panel 90. The transposer panel
86 is then cooperatively engaged to a stacking fixture such that
the solder balls 68 face or are directed downwardly. A base panel
88 is then stacked upon the transposer panel 86 such that the base
pads 30 of the third set of each group face or are directed
downwardly and are aligned with respective ones of the transposer
pads 64 of the first set of the corresponding group upon the
transposer panel 86 immediately therebelow.
[0056] In the next step of the assembly process, a frame panel 90
is stacked upon the base panel 88 such that the bodies 72 of the
integrated circuit chips 70 are each circumvented by the frame
panel 90. Another base panel 88 is then stacked upon the frame
panel 90 in a manner wherein the base pads 30 of the third set of
each group of such uppermost base panel 88 are aligned with
respective ones of the frame pads 44 of the first set of the
corresponding group upon the frame panel 90 immediately therebelow.
As will be recognized, the above-described stacking process may be
continued or repeated to form a chip stack having a greater number
of electrically interconnected integrated circuit chips 70.
[0057] Upon the stacking of the various panels in the
above-described manner, a pressure plate is applied to the top of
the stack to maintain such panels in prescribed orientations
relative to each other. The stacked panels are then placed into a
heated lamination press. With the pressure applied by the
lamination press, the particles 51 of the anisotropic epoxy 49 are
trapped between respective opposing pairs of the base, frame, and
transposer pads 26, 30, 44, 46, 64 in the manner shown in FIGS. 7
and 8, thus forming a conductive conduit between such pads. The
heat applied by the lamination press cures the epoxy component 50
of the anisotropic epoxy 49, which thus holds the various panels
and hence the structure together. Once cured, the anisotropic epoxy
49 does not reflow at temperatures above 200.degree. C. The
processing window is very tolerant with process temperatures below
200.degree. C. Upon the completion of curing process for the
anisotropic epoxy 49, the individual chip stacks are separated
through the use of a router.
[0058] As indicated above, if the base, frame, and transposer pads
26, 30, 44, 46, 64 are nickel/gold plated, the particles 51 form a
pressure contact between the pads. If such pads are plated with a
tin based metal and sufficient heat is applied by the lamination
press, the particles 51 form a metalurgical connection between the
pads. By controlling the size of the particles 51, bridging between
adjacent pads is eliminated. Fine pitch between the pads can
therefore be achieved. Additionally, since flux is not used, post
assembly cleaning is not required. Those of ordinary skill in the
art will recognize that a transposer panel 86 need not necessarily
be included in the assembly process, since the lowermost base layer
12 in any chip stack may be used as a transposer board to
facilitate the mounting or electrical connection of the chip stack
to a PCB.
[0059] Additional modifications and improvements of the present
invention may also be apparent to those of ordinary skill in the
art. Thus, the particular combination of parts and steps described
and illustrated herein is intended to represent only one embodiment
of the present invention, and is not intended to serve as
limitations of alternative devices and methods within the spirit
and scope of the invention.
* * * * *