U.S. patent application number 09/920062 was filed with the patent office on 2002-07-11 for multi-chip memory devices, modules and control methods including independent control of memory chips.
Invention is credited to Jeon, Jun Young, Kong, Eun Youp, Park, Chul Hong, Shon, Hai Jeong.
Application Number | 20020088633 09/920062 |
Document ID | / |
Family ID | 19704383 |
Filed Date | 2002-07-11 |
United States Patent
Application |
20020088633 |
Kind Code |
A1 |
Kong, Eun Youp ; et
al. |
July 11, 2002 |
Multi-chip memory devices, modules and control methods including
independent control of memory chips
Abstract
Multi-chip memory devices include at least two integrated
circuit memory chips, each of which includes corresponding address
pads, data pads and control signal pads, and a common package that
encapsulates the at least two integrated circuit memory chips, and
that includes external terminals. An internal connection circuit in
the common package is configured to connect at least one of the
corresponding control signal pads of each of the integrated circuit
memory chips to separate ones of the external terminals, to allow
independent external control of each of the integrated circuit
memory chips that are encapsulated in the common package.
Multi-chip memory devices may be combined to form memory modules.
The memory modules include a memory module substrate having first
and second opposing surfaces. At least one multi-chip memory
device, as described above, is provided on the first surface and on
the second surface.
Inventors: |
Kong, Eun Youp; (Kyonggi-do,
KR) ; Jeon, Jun Young; (Seoul, KR) ; Shon, Hai
Jeong; (Kyonggi-do, KR) ; Park, Chul Hong;
(Kyonggi-do, KR) |
Correspondence
Address: |
MYERS BIGEL SIBLEY & SAJOVEC
PO BOX 37428
RALEIGH
NC
27627
US
|
Family ID: |
19704383 |
Appl. No.: |
09/920062 |
Filed: |
August 1, 2001 |
Current U.S.
Class: |
174/527 ;
174/541; 174/549; 257/E25.023 |
Current CPC
Class: |
H01L 2225/1029 20130101;
H01L 2224/32145 20130101; H01L 2224/48091 20130101; H01L 2225/1005
20130101; H01L 25/105 20130101; H01L 2224/4826 20130101; H01L
2924/181 20130101; H01L 2224/73215 20130101; H01L 2224/32245
20130101; H01L 2225/107 20130101; H01L 2224/48091 20130101; H01L
2924/00014 20130101; H01L 2224/73215 20130101; H01L 2224/32245
20130101; H01L 2224/4826 20130101; H01L 2924/00 20130101; H01L
2924/181 20130101; H01L 2924/00012 20130101 |
Class at
Publication: |
174/52.2 |
International
Class: |
H01L 023/28 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 8, 2001 |
KR |
2001-1019 |
Claims
What is claimed is:
1. A multi-chip memory device, comprising: at least two integrated
circuit memory chips, each of which includes a plurality of
corresponding address pads, data pads and control signal pads; a
common package that encapsulates the at least two integrated
circuit memory chips and that includes a plurality of external
terminals; and an internal connection circuit in the common package
that is configured to connect at least one of the corresponding
control signal pads of each of the integrated circuit memory chips
to separate ones of the plurality of external terminals to allow
independent external control of each of the integrated circuit
memory chips that are encapsulated in the common package.
2. A multi-chip memory device according to claim 1 wherein the at
least two integrated circuit memory chips comprise at least two
identical integrated circuit memory chips.
3. A multi-chip memory device according to claim 1 wherein the at
least one of the corresponding control circuit pads comprises a
chip select signal pad and wherein the internal connection circuit
in the common package is configured to connect the chip select
signal pad of each of the integrated circuit memory chips to
separate ones of the plurality of external terminals to allow
independent external chip selection of each of the integrated
circuit memory chips that are encapsulated in the common
package.
4. A multi-chip memory device according to claim 1 wherein the at
least one of the corresponding control circuit pads comprises a
clock enable signal pad and wherein the internal connection circuit
in the common package is configured to connect the clock enable
signal pad of each of the integrated circuit memory chips to
separate ones of the plurality of external terminals to allow
independent external clocking of each of the integrated circuit
memory chips that are encapsulated in the common package.
5. A multi-chip memory device according to claim 3 wherein the at
least one of the corresponding control circuit pads comprises a
clock enable signal pad and wherein the internal connection circuit
in the common package is configured to connect the clock enable
signal pad of each of the integrated circuit memory chips to
separate ones of the plurality of external terminals to allow
independent external clocking of each of the integrated circuit
memory chips that are encapsulated in the common package.
6. A multi-chip memory device according to claim 1 wherein the
internal connection circuit in the common package is further
configured to connect the corresponding data pads of each of the
integrated circuit memory chips in common to a plurality of
corresponding external terminals.
7. A multi-chip memory device according to claim 1 wherein the
internal connection circuit in the common package is further
configured to separately connect the corresponding data pads of
each of the integrated circuit memory chips to separate ones of the
external terminals.
8. A multi-chip memory device according to claim 1 in combination
with a memory module substrate including first and second opposing
surfaces, wherein the multi-chip memory device is a first
multi-chip memory device and is on the first surface, and in
further combination with a second multi-chip memory device on the
second surface, the second multi-chip memory device comprising: at
least two integrated circuit memory chips, each of which includes a
plurality of corresponding address pads, data pads and control
signal pads; a common package that encapsulates the at least two
integrated circuit memory chips and that includes a plurality of
external terminals; and an internal connection circuit in the
common package that is configured to connect at least one of the
corresponding control signal pads of each of the integrated circuit
memory chips to separate ones of the plurality of external
terminals to allow independent external control of each of the
integrated circuit memory chips that are encapsulated in the common
package.
9. A multi-chip memory device, comprising: at least two integrated
circuit memory chips, each of which includes a plurality of
corresponding address pads, data pads and control signal pads; a
common package that encapsulates the at least two integrated
circuit memory chips and that includes a plurality of external
terminals; and means for independently controlling each of the
integrated circuit memory chips that are encapsulated in the common
package, via at least one of the plurality of external
terminals.
10. A multi-chip memory device according to claim 9 wherein the
means for independently controlling comprises an internal
connection circuit in the common package that is configured to
connect at least one of the corresponding control signal pads of
each of the integrated circuit memory chips to separate ones of the
plurality of external terminals to allow independent external
control of each of the integrated circuit memory chips that are
encapsulated in the common package.
11. A memory module comprising: a memory module substrate including
first and second opposing surfaces; at least one multi-chip memory
device on the first surface and on the second surface, each of the
multi-chip memory devices comprising: at least two integrated
circuit memory chips, each of which includes a plurality of
corresponding address pads, data pads and control signal pads; a
common package that encapsulates the at least two integrated
circuit memory chip s and that includes a plurality of external
terminal s; and an internal connection circuit in the common
package that is configured to connect at least one of the
corresponding control signal pads of each of the integrated circuit
memory chips to separate ones of the plurality of external
terminals to allow independent external control of each of the
integrated circuit memory chips that are encapsulated in the common
package.
12. A memory module according to claim 11 where in the at least two
integrated circuit memory chips comprise at least two identical
integrated circuit memory chips.
13. A memory module according to claim 11 wherein the at least one
of the corresponding control circuit pads comprises a chip select
signal pad and wherein the internal connection circuit in the
common package is configured to connect the chip select signal pad
of each of the integrated circuit memory chips to separate ones of
the plurality of external terminals to allow independent external
chip selection of each of the integrated circuit memory chips that
are encapsulated in the common package.
14. A memory module according to claim 11 wherein the at least one
of the corresponding control circuit pads comprises a clock enable
signal pad and wherein the internal connection circuit in the
common package is configured to connect the clock enable signal pad
of each of the integrated circuit memory chips to separate ones of
the plurality of external terminals to allow independent external
clocking of each of the integrated circuit memory chips that are
encapsulated in the common package.
15. A memory module according to claim 11 wherein the internal
connection circuit in the common package is further configured to
connect the corresponding data pads of each of the integrated
circuit memory chips in common to a plurality of corresponding
external terminals.
16. A memory module according to claim 11 wherein the memory module
substrate further comprises an external connection circuit that is
configured to simultaneously enable only one of the at least two
integrated circuit memory chips in each of the at least one
multi-chip memory device on the first surface and on the second
surface.
17. A memory module according to claim 16 wherein the external
connection circuit is further configured to simultaneously enable
only a corresponding one of the at least two integrated circuit
memory chips in each of the at least one multi-chip memory device
on the first surface and on the second surface.
18. A memory module according to claim 16 wherein the external
connection circuit is further configured to simultaneously enable
only a first of the at least two integrated circuit memory chips in
each of the at least one multi-chip memory device on the first
surface and to simultaneously enable only a second of the at least
two integrated circuit memory chips in each of the at least one
multi-chip memory device on the second surface.
19. A memory module according to claim 16 wherein the external
connection circuit is further configured to simultaneously enable
only a first of the at least two integrated circuit memory chips in
each of the at least one multi-chip memory device on a first
portion of the first surface and on a corresponding first portion
of the second surface and to simultaneously enable a only a second
of the at least two integrated circuit memory chips in each of the
at least one multi-chip memory device on a second portion of the
first surface and on a corresponding second portion of the second
surface.
20. A memory module according to claim 16 wherein the external
connection circuit further comprises a first external system clock
circuit that is configured to provide a first external system clock
signal to the at least two integrated circuit memory chips in each
of the at least one multi-chip memory device on the first surface
and to provide a second external system clock signal to the at
least two integrated circuit memory chips in each of the at least
one multi-chip memory device on the second surface.
21. A memory module according to claim 16 wherein the external
connection circuit further comprises a first external system clock
circuit that is configured to provide a first external system clock
signal to the at least two integrated circuit memory chips in each
of the at least one multi-chip memory device on a first portion of
the first surface and on a corresponding first portion of the
second surface, and to provide a second external system clock
signal to the at least two integrated circuit memory chips in each
of the at least one multi-chip memory device on a second portion of
the first surface and on a corresponding second portion of the
second surface.
22. A method of controlling a multi-chip memory device that
comprises at least two integrated circuit memory chips, each of
which includes a plurality of corresponding address pads, data pads
and control signal pads and a common package that encapsulates the
at least two integrated circuit memory chips and that includes a
plurality of external terminals, the method comprising:
independently controlling each of the integrated circuit memory
chips that are encapsulated in the common package, from external of
the common package.
23. A method according to claim 22 wherein the independently
controlling comprises independently selecting each of the
integrated circuit memory chips that are encapsulated in the common
package, from external of the common package.
24. A method according to claim 22 wherein the independently
controlling comprises independently enabling a clock signal for
each of the integrated circuit memory chips that are encapsulated
in the common package, from external of the common package.
25. A method of controlling a memory module that comprises a memory
module substrate including first and second opposing surfaces and
at least one multichip memory device on the first surface and on
the second surface, each of the multichip memory devices comprising
at least two integrated circuit memory chips, each of which
includes a plurality of corresponding address pads, data pads and
control signal pads, and a common package that encapsulates the at
least two integrated circuit memory chips and that includes a
plurality of external terminals, the method comprising:
simultaneously enabling only one of the at least two integrated
circuit memory chips in each of the at least one multi-chip memory
device on the first surface and on the second surface.
26. A method according to claim 25 wherein the simultaneously
enabling comprises simultaneously enabling only a corresponding one
of the at least two integrated circuit memory chips in each of the
at least one multi-chip memory device on the first surface and on
the second surface.
27. A method according to claim 25 wherein the simultaneously
enabling comprises simultaneously enabling only a first of the at
least two integrated circuit memory chips in each of the at least
one multi-chip memory device on the first surface and to
simultaneously enable a only a second of the at least two
integrated circuit memory chips in each of the at least one
multi-chip memory device on the second surface.
28. A method according to claim 25 wherein the simultaneously
enabling comprises simultaneously enabling only a first of the at
least two integrated circuit memory chips in each of the at least
one multi-chip memory device on a first portion of the first
surface and a corresponding first portion of the second surface and
to simultaneously enable a only a second of the at least two
integrated circuit memory chips in each of the at least one
multi-chip memory device a second portion of the first surface and
on a corresponding second portion of the second surface.
Description
RELATED APPLICATION
[0001] This application claims the benefit of Korean Patent
Application No. 2001-1019, filed Jan. 8, 2001, the disclosure of
which is hereby incorporated herein by reference in its entirety as
if set forth fully herein.
FIELD OF THE INVENTION
[0002] The present invention relates to memory devices, and more
particularly to multi-chip memory devices that include at least two
chips in one package, memory modules including the multi-chip
memory devices, and control methods for the multichip memory
devices and memory modules.
BACKGROUND OF THE INVENTION
[0003] Integrated circuit memory chips are widely used in consumer
and commercial applications. In these applications, it may be
desirable to increase the amount of memory that can be packaged in
a given area or volume. Accordingly, multi-chip memory devices have
been used, wherein at least two integrated circuit memory chips are
encapsulated in a common package that includes a plurality of
external terminals. It is also known to mount a plurality of
multi-chip memory devices on first and second opposing surfaces of
a memory module substrate, to provide a memory module.
[0004] For example, a 144-pin/200-pin memory module mounted on a
main board of a notebook computer can include a small outline dual
in-line memory module (SODIMM) having a width of 1.25 inches, a
height of 2.66 inches and a thickness of 0.15 inches and a
micro-dual in-line memory module (.mu.-DIMM) having a width of 1.18
inches, a height of 1.5 inches and a thickness of 0.15 inches. The
size of the memory module is determined in accordance with the
joint electronic devices engineering council (JEDEC) standard. On
such a memory module, up to four synchronous dynamic random access
memory (SDRAM) of a 54-pin thin small outline package (TSOP) type
can be mounted on both its front surface and its rear surface,
respectively.
[0005] FIGS. 1A and 1B are plan views illustrating, respectively,
configurations of a front surface and a rear surface of a
conventional 144-pin/200-pin memory module. As shown in FIGS. 1A
and 1B, the front surface 10 of the module includes four memory
devices 12-1 to 12-4, and the rear surface 20 also includes four
memory devices 22-1 to 22-4. On both the front and rear surfaces 10
and 20 of the memory module, signal lines are arranged to connect
the memory devices 12-1 to 12-4 and 221 to 22-4 with connecting
pins 14-1, 14-2, 24-1, and 24-2. The connecting pins 14-1 and 14-2
of the front surface 10 and the connecting pins 24-1 and 24-2 of
the rear surface 20 are connected with signal lines of a main board
or motherboard through slots of the main board. A pin configuration
of the memory module includes 12 input pins, 2 bank selecting
signal pins, 64 data input/output pins, one row address strobe pin,
one column address strobe pin, one write enable signal pin, 8 data
input/output mask pins, and a predetermined number of no-connection
pins.
[0006] FIG. 2 is a cross-sectional view of an SDRAM of the TSOP
type for mounting on the module shown in FIG. 1. As shown in FIG.
2, the memory device includes an encapsulating package 30, a chip
32, lead frames 34-1 and 34-2, pads 361 and 36-2, insulating
materials 38-1 and 38-2, and bonding wires 40-1 and 40-2. The chip
32 and the lead frames 34-1 and 34-2 are respectively insulated by
the insulating materials 38-1 and 38-2, and the lead frames 34-1
and 34-2 and the pads 36-1 and 362 are respectively connected with
each other via the bonding wires 40-1 and 40-2. The lead frames
34-1 and 34-2 are used as signal input/output pins.
[0007] FIG. 3 is a plan view illustrating a pin configuration of an
SDRAM of the 54-pin TSOP type. Pin numbers 1, 14 and 27 denote a
power supply (VDD) pin. Pin numbers 28, 41 and 54 denote a power
supply ground pin. Pin numbers 3, 9, 43 and 49 denote data output
power pins. Pin numbers 6, 12, 46 and 52 denote data output power
ground pins. Pin number 16 denotes a write enable signal (WEB)
applying pin. Pin number 17 denotes a column address strobe signal
(CASB) applying pin. Pin number 18 denotes a row address strobe
signal (CASB) applying pin. Pin number 19 denotes a chip select
signal (CSB) applying pin. Pin numbers 20 and 21 denote bank select
address (BA0, BA1) applying pins. Pin numbers 22 to 26 and 29 to 36
denote address (A0 to A12) applying pins. Pin number 37 denotes a
clock enable signal (CKE) applying pin. Pin number 38 denotes a
system clock signal (CLK) applying pin. Pin numbers 15 and 39
denote data input/output mask signal (LDQM, UDQM) applying pins.
Pin numbers 2, 4, 5, 7, 8, 10, 11, 13, 42, 44, 45, 47, 48, 50, 51
and 53 denote data chip/output signal (DQ0 to DQ15) pins. Pin
number 40 denotes a no-connection pin.
[0008] A chip select signal (CSB) applied to the chip select signal
(CSB) applying pin enables inputting of signals inputted to all the
pins described above except the system clock signal (CLK) applying
pin, the clock enable signal (CKE) applying pin and the data
input/output mask signal (LDQM, UDQM) applying pins, so that an
operation of the memory device is enabled. The system clock signal
(CLK) applying pin is a pin for inputting the clock signal applied
from a controller of the main board. Particularly, the clock enable
signal (CKE) applying pin may be used as a control signal applying
pin for a power-down mode of the notebook computer.
[0009] FIG. 4 is a plan view illustrating the memory devices
mounted on the memory module of FIG. 1 and control signal lines.
The memory module of FIG. 4 is 256M byte memory module on which
eight memory devices 12-1 to 12-4 and 22-1 to 22-4 of 16M.times.16
bits are mounted. In FIGS. 1 and 4, like reference numerals denote
like parts.
[0010] The memory devices 12-1 to 12-4 arranged in a dotted line
portion 10' are the memory devices mounted on the front surface 10
of the memory module. An operation of the memory devices 12-1 to
12-4 is enabled in response to the chip select signal (CSB0), and
the system clock signal (CLK0) is enabled in response to the clock
enable signal (CKE0), so that data is input or output in response
to the system clock signal (CLK0). Data of 16 bits is input into or
output from each of the memory devices 12-1 to 12-4, and therefore
the total data input into or output from the memory devices 12-1 to
12-4 is 64 bits.
[0011] The memory devices 22-1 to 22-4 arranged in a dotted line
portion 20' are the memory devices mounted on the rear surface 20
of the memory module. An operation of the memory devices 22-1 to
22-4 is enabled in response to the chip select signal (CSB1), and
the system clock signal (CLK1) is enabled in response to the clock
enable signal (CKE1), so that data is input or output in response
to the system clock signal (CLK1). Data of 16 bits is input into or
output from each of the memory devices 22-1 to 22-4, and therefore
the total data input into or output from the memory devices 22-1 to
22-4 is 64 bits.
[0012] Other signal lines, which are not shown in FIG. 4, are
connected to each other via common signal lines. That is, as shown
in FIG. 4, in the 256M byte memory module, four memory devices of
16M.times.16 bits are respectively mounted on both its front
surface 10 and its rear surface 20. The four memory devices
arranged on the front surface 10 and the four memory devices
arranged on rear surface 20 can be operated independent from each
other in order to input/output data of 64 bits into/from the 256M
byte memory module. As shown in FIG. 4, in case the four memory
devices mounted on the front and rear surfaces 10 and 20 are
separately operated, in order to increase a capacity of the memory
module, it may be desirable to increase the capacity of the memory
devices. For example, in order to configure a 512M byte memory
module, four memory devices of 16M.times.16 bits may respectively
be mounted on both the front and rear surfaces of the memory
module. However, these high capacity memory modules may be
difficult to manufacture. Also, when the memory devices are
operated as shown in FIG. 4, it may be difficult to configure a
memory module having a large capacity using the memory devices
having a small capacity.
[0013] In efforts to overcome these and/or other potential
problems, four memory devices, which are configured such that two
TSOP packages of 32M.times.8 bits are stacked, are mounted on both
the front surface 10 and the rear surfaces 20, so that the memory
module may have a capacity of 512M byte. However, since the memory
module is configured in such a way that two packages are stacked,
the memory device may become too thick.
[0014] In efforts to overcome these and/or other potential
problems, a memory module that packages two chips into one package
has been introduced. FIG. 5 is a cross-sectional view of a
multi-chip memory device wherein two chips are encapsulated into
one package. As shown in FIG. 5, the multi-chip memory device
includes upper and lower chips 52-1 and 52-2 disposed to be
opposite to each other and a common package 50 that encapsulates
the upper and lower chips 52-1 and 52-2. The upper chip 52-1
includes first and second lead frames 54-1 and 54-2, first and
second insulating materials 56-1 and 56-2, first and second pads
58-1 and 58-2, and first and second bonding wires 60-1 and 60-2.
The lower chip 52-2 includes first and second lead frames 54-3 and
54-4, first and second insulating materials 56-3 and 56-4, first
and second pads 58-3 and 58-4, and first and second bonding wires
60-3 and 604. 4.
[0015] In the multi-chip memory device of FIG. 5, the first lead
frame 54-1 of the upper chip 52-1 and the first lead frame 54-2 of
the lower chip 52-2 are connected to each other, and the second
lead frame 54-2 of the upper chip 52-1 and the second lead frame
54-4 of the lower chip 52-2 are also connected to each other. The
lead frames 54-1 to 54-4 are connected to a plurality of control
signal applying pins of the upper and lower chips 52-1 and 52-2,
respectively. The lead frames connected to a plurality of data
input/output pins of the chips 52-1 and 52-2 are not connected to
each other and are configured independent of each other. In other
words, all first and second lead frames of the chips 52-1 and 52-2
except the lead frames connected to the data input/output pins of
the chips 52-1 and 52-2 of 32M.times.8 bits are connected to each
other, respectively. As a result, the multi-chip memory device has
the same pin configuration as shown in FIG. 3. The first and second
lead frames 54-1 and 54-2 of FIG. 5 are used as signal input/output
pins.
[0016] FIG. 6 is a plan view illustrating a pin configuration of
the SDRAM of a 54-pin TSOP type of 32M.times.8 bits. In FIG. 6, pin
numbers 4, 7, 10, 15, 40, 42, 45, 48, and 51 denote a no-connection
(NC) pin. In case of a multi-chip memory device wherein the two
chips 52-1 and 52-2 are not packed into one package, the
no-connection lead frames of the chip 52-1 may be connected with
the data input/output (DQ0 to DQ7) lead frames of the chip 52-2.
Therefore, the memory device can have the same pin configuration as
shown in FIG. 3 and becomes an SDRAM of 32M.times.8
bits.times.2.
[0017] In the memory device of FIG. 5, the two chips 52-1 and 52-2
are simultaneously enabled in response to the chip select signal,
and the system clock signal is enabled in response to the clock
enable signal, so that data of 8 bits is input into or output from
each of the two chips 52-1 and 52-2 in response to the system clock
signal. However, since the two chips perform an input/output of
data at the same time, excessive heat may be generated, whereby
performance of the memory device may be reduced.
[0018] FIG. 7 is a plan view illustrating the memory devices of
FIG. 5 mounted on the memory module of FIG. 1 and control signal
lines on the main board. The memory module of FIG. 7 includes eight
memory devices 12-1 to 12-4 and 22-1 to 224 of 32M.times.8
bits.times.2 and thus has a capacity of 512M bytes. In FIGS. 1 and
7, like reference numbers denote like parts.
[0019] The memory devices 12-1 to 12-4 arranged in a dotted line
portion 10' are mounted on the front surface 10 of the memory
module. Operation of the memory devices 12-3 and 12-4 is enabled in
response to the chip select signal (CSB0), and the system clock
signal (CLK0) is enabled in response to the clock enable signal
(CKE0), so that data of 32 bits is input or output in response to
the system clock signal (CLK0). Also, operation of the memory
devices 12-1 and 12-2 is enabled in response to the chip select
signal (CSB1), and the system clock signal (CLK1) is enabled in
response to the clock enable signal (CKE1), so that data of 32 bits
is input or output in response to the system clock signal (CLK1).
That is, the memory devices 12-1 to 12-4 are enabled in response to
the chip select signal (CSB0) and the clock enable signal (CKE0)
and input or output data of 64 bits in response to the system clock
signal (CLK0, CLK1).
[0020] The memory devices 22-1 to 22-4 arranged in a dotted line
portion 20' are mounted on the rear surface 20 of the memory
module. Operation of the memory devices 22-1 and 22-2 is enabled in
response to the chip select signal (CSB1), and the system clock
signal (CLK0) is enabled in response to the clock enable signal
(CKE1), so that data of 32 bits is input or output in response to
the system clock signal (CLK0). Also, operation of the memory
devices 22-3 and 22-4 are enabled in response to the chip select
signal (CSB1), and the system clock signal (CLK1) is enabled in
response to the clock enable signal (CKE1), so that data of 32 bits
input or output in response to the system clock signal (CLK1). That
is, the memory devices 12-1 to 12-4 are enabled in response to the
chip select signal (CSB1) and the clock enable signal (CKE1) and
input or output data of 64 bits in response to the system clock
signal (CLK0, CLK1).
[0021] However, as described above, conventional memory devices may
be have degraded performance due to heat that may be generated when
the two chips perform an input/output of data at the same time.
SUMMARY OF THE INVENTION
[0022] Embodiments of the present invention provide multi-chip
memory devices that include at least two integrated circuit memory
chips, each of which includes a plurality of corresponding address
pads, data pads and control signal pads, and a common package that
encapsulates the at least two integrated circuit memory chips, and
that includes a plurality of external terminals. An internal
connection circuit in the common package is configured to connect
at least one of the corresponding control signal pads of each of
the integrated circuit memory chips to separate ones of the
plurality of external terminals, to allow independent external
control of each of the integrated circuit memory chips that are
encapsulated in the common package. By allowing independent
external control, the at least two integrated circuit memory chips
may not be operated simultaneously. Accordingly, embodiments of the
internal connection circuit in the common package can provide means
for independently controlling each of the integrated circuit memory
chips that are encapsulated in the common package, via at least one
of the plurality of external terminals. Generation of heat in the
multi-chip memory package therefore may be reduced.
[0023] In some embodiments, the at least two integrated circuit
memory chips comprise at least two identical integrated circuit
memory chips. In other embodiments, the at least one of the
corresponding control circuit pads comprises a chip select signal
pad, and the internal connection circuit in the common package is
configured to connect the chip select signal pad of each of the
integrated circuit memory chips to separate ones of the plurality
of external terminals, to allow external chip selection of each of
the integrated circuit memory chips that are encapsulated in the
common package. In other embodiments, the at least one of the
corresponding control circuit pads comprises a clock enable signal
pad, and the internal connection circuit in the common package is
configured to connect the clock enable signal pad of each of the
integrated circuit memory chips to separate ones of the plurality
of external terminals, to allow independent external clocking of
each of the integrated circuit memory chips that are encapsulated
in the common package. In yet other embodiments, the internal
connection circuit is further configured to connect the
corresponding data pads of each of the integrated circuit memory
chips in common to a plurality of corresponding external terminals.
In still other embodiments, the internal connection circuit is
configured to connect the corresponding data pads of the integrated
circuit memory chips to separate ones of the external
terminals.
[0024] Multi-chip memory devices, according to any of the
embodiments that were described above, may be combined to form
memory modules according to embodiments of the invention. The
memory modules include a memory module substrate having first and
second opposing surfaces. At least one multi-chip memory device, as
described above, is provided on the first surface and on the second
surface.
[0025] In some embodiments of memory modules, the memory module
substrate further comprises an external connection circuit that is
configured to simultaneously enable only one of the at least two
integrated circuit chips in each of the at least one multi-chip
memory device on the first surface and on the second surface. In
other embodiments, the external connection circuit is further
configured to simultaneously enable only a corresponding one of the
at least two integrated circuit chips in each of the at least one
multi-chip memory device on the first surface and on the second
surface. In yet other embodiments, the external connection circuit
is further configured to simultaneously enable only a first of the
at least two integrated circuit chips in each of at least one
multi-chip memory device on the first surface, and to
simultaneously enable only a second of the at least two integrated
circuit chips in each of the at least one multi-chip memory device
on the second surface. In still other embodiments, the external
connection circuit is further configured to simultaneously enable
only a first of the at least two integrated circuit chips in each
of the at least one multi-chip memory devices on a first portion of
the first surface and on a corresponding first portion of the
second surface, and to simultaneously enable only a second of the
at least two integrated circuit chips in each of the at least
multi-chip memory devices on a second portion of the first surface
and on a corresponding second portion of the second surface.
[0026] In other embodiments, the external connection circuit
further comprises a first external system clock circuit that is
configured to provide a first external system clock to the at least
two integrated circuit memory chips in each of the at least one
multichip memory device on the first surface and to provide a
second external system clock signal to the at least two integrated
circuit memory chips in each of the at least one multi-chip memory
devices on the second surface. In yet other embodiments, the
external connection circuit further comprises a first external
system clock circuit that is configured to provide a first external
system clock signal to the at least two integrated circuit memory
chips in each of the at least one multi-chip memory devices on a
first portion of the first surface and on a corresponding first
portion of the second surface, and to provide a second external
system clock signal to the at least two integrated circuit memory
chips in each of the at least one multi-chip memory devices on a
second portion of the first surface and on a corresponding second
portion of the second surface.
[0027] According to method embodiments of the present invention, a
multi-chip module device that comprises at least two integrated
circuit memory chips and a common package that encapsulates the at
least two integrated circuit memory chips and that includes a
plurality of external terminals, is controlled by independently
controlling each of the integrated circuit memory chips that are
encapsulated in the common package, from external of the common
package. Independent control may be provided, according to
embodiments of the present invention, by independently selecting
each of the integrated circuit memory chips that are encapsulated
in the common package and/or by independently enabling a clock
signal for each of the integrated circuit memory chips that are
encapsulated in the common package.
[0028] According to other method embodiments, a memory module that
includes a memory module substrate and at least one multi-chip
memory device on the first surface and on the second surface
thereof, is controlled by simultaneously enabling only one of the
at least two integrated circuit memory chips in each of the at
least one multi-chip memory devices on the first surface and on the
second surface.
BRIEF DESCRIPTION OF THE DRAWINGS
[0029] FIGS. 1A and 1B are plan views illustrating, respectively,
configurations of a front surface and a rear surface of a
conventional 144-pin/200-pin memory module;
[0030] FIG. 2 is a cross-sectional view of an SDRAM of a TSOP
type;
[0031] FIG. 3 is a plan view illustrating a pin configuration of
the SDRAM of the 54-pin TSOP type;
[0032] FIG. 4 is a plan view illustrating the memory devices
mounted on the memory module of FIGS. 1A and 1B;
[0033] FIG. 5 is a cross-sectional view of a memory device wherein
two chips are packed into one package;
[0034] FIG. 6 is a plan view illustrating a pin configuration of a
SDRAM of a 54-pin TSOP type of 32M.times.8 bits;
[0035] FIG. 7 is a plan view illustrating the memory devices of
FIG. 5 mounted on the memory module of FIG. 1;
[0036] FIG. 8 is a plan view illustrating a pin configuration of
multi-chip memory devices according to embodiments of the present
invention;
[0037] FIG. 9 is a plan view illustrating multi-chip memory devices
according to embodiments of the present invention mounted on a
memory module according to embodiments of the present invention;
and
[0038] FIG. 10 is a plan view illustrating multi-chip memory
devices according to embodiments of the present invention mounted
on a memory module according to other embodiments of the present
invention.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
[0039] The present invention now will be described more fully
hereinafter with reference to the accompanying drawings, in which
embodiments of the invention are shown. This invention may,
however, be embodied in many different forms and should not be
construed as limited to the embodiments set forth herein. Rather,
these embodiments are provided so that this disclosure will be
thorough and complete, and will fully convey the scope of the
invention to those skilled in the art. Like numbers refer to like
elements throughout. It will be understood that when an element
such as a layer, region or substrate is referred to as being "on"
another element, it can be directly on the other element or
intervening elements may also be present. In contrast, when an
element is referred to as being "directly on" another element,
there are no intervening elements present. It will also be
understood that when an element is referred to as being "connected"
or "coupled" to another element, it can be directly connected or
coupled to the other element or intervening elements may be
present. In contrast, when an element is referred to as being
"directly connected" or "directly coupled" to another element,
there are no intervening elements present.
[0040] FIG. 8 is a plan view illustrating a pin configuration of
multi-chip memory devices according to embodiments of the present
invention. Pin number 15 denotes a chip select signal (CSB1)
applying pin. Pin number 40 denotes a clock enable signal (CKE1).
Pin number 19 denotes a chip select signal (CSBO) applying pin. Pin
number 37 denotes clock enable signal (CKEO) applying pin. The
other pin configurations are similar to that of FIG. 6.
[0041] In conventional multi-chip memory devices, the chip select
signal applying lead frames and the clock enable signal applying
lead frames of the two chips are connected to each other. However,
in the multi-chip memory device of FIG. 8, the chip select signal
applying lead frames and/or the clock enable signal applying lead
frames of the two chips are not connected to each other but are
configured independent of each other. Thus, the lead frames provide
an embodiment of an internal connection circuit in the common
package that is configured to connect at least one of the
corresponding control signal pads of each of the integrated circuit
memory chips to separate ones of the plurality of external
terminals, to allow independent external control of each of the
integrated circuit memory chips that are encapsulated in the common
package. Other embodiments of lead frames and/or other internal
connection circuits may be provided.
[0042] Also, in conventional memory devices, eight data
input/output lead frames of the two chips are not connected with
each other but are configured independent of each other. However,
in the pin configuration of embodiments of the multi-chip memory
device of FIG. 8, eight data input/output lead frames of the two
chips are connected with each other. Therefore, an operation of
memory devices of FIG. 8 is enabled in response to the chip select
signal (CSB0), and the system clock signal (CLK) is enabled in
response to the clock enable signal (CKE0), so that data is input
into or output from only one of the two chips. Also, an operation
of the memory devices is enabled in response to the chip select
signal (CSB1), and the system clock signal (CLK) is enabled in
response to the clock enable signal (CKE1), so that data is input
into or output from the other of the two chips. Thus, in
embodiments of multichip memory devices of FIG. 8, the two chips in
the package can be operated in response to different control
signals from each other.
[0043] In the embodiments of FIG. 8, data input/output lead frames
of the two chips are internally connected with each other and data
input/output pins (DQ0 to DQ7) of 8 bits are externally configured.
However, since the memory device of FIG. 8 has no-connection (NC)
pins, the no-connection pins of FIG. 8 may connected with the data
input/output pads of the other chip to externally configure the
data input/output pins (DQ0 to DQ15) of 16 bits. Also, when the
memory device does not need to be operated as a low power, the
clock enable signal (CKE0, CKE1) applying pins may be connected to
each other.
[0044] FIG. 9 is a plan view illustrating multi-chip memory devices
according to embodiments of the present invention mounted on a
memory module substrate according to embodiments of the present
invention. The memory module has eight multi-chip memory devices of
32M.times.8 bits.times.2 and thus has a capacity of 512M byte. In
FIGS. 1 and 9, like reference numerals denote like parts.
[0045] The memory devices 12-1 to 12-4 arranged in a dotted line
portion 10' are mounted on the front surface 10 of the memory
module substrate. An operation of one chip of each memory devices
12-1 to 12-4 is enabled in response to the chip select signal
(CSB0), and the system clock signal (CLK0) is enabled in response
to the clock enable signal (CKE0), so that data of 8 bits is input
or output in response to the system clock signal (CLK0). Also, an
operation of the other chip of each memory devices 12-1 to 12-4 is
enabled in response to the chip select signal (CSB1), and the
system clock signal (CLK1) is enabled in response to the clock
enable signal (CKE1), so that data of 8 bits is input or output in
response to the system clock signal (CLK1).
[0046] The memory devices 22-1 to 22-4 arranged in a dotted line
portion 20' are mounted on the rear surface 20 of the memory module
substrate. An operation of only one chip of each memory devices
22-1 to 22-4 is enabled in response to the chip select signal
(CSB0), and the system clock signal (CLK0) is enabled in response
to the clock enable signal (CKE0), so that data of 8 bits are input
or output in response to the system clock signal (CLK0). Also, an
operation of the other chip of each memory devices 22-1 to 22-4 is
enabled in response to the chip select signal (CSB1), and the
system clock signal (CLK1) is enabled in response to the clock
enable signal (CKE1), so that data of 8 bits are input or output in
response to the system clock signal (CLK1).
[0047] In other words, the upper (or lower) chips of the memory
devices 12-1 to 124 and 22-1 to 22-4 are simultaneously operated by
the chip select signal (CSB0) and the clock enable signal (CKE0),
and the lower (or upper) chips of the memory devices 12-1 to 12-4
and 22-1 to 22-4 are simultaneously operated by the chip select
signal (CSB1) and the clock enable signal (CKE1). Therefore, data
of 8 bits is input into or output from each of the memory devices
12-1 to 12-4 and 22-1 to 22-4, and thus data of total 64 bits is
input into or output from the memory module.
[0048] In embodiments of FIG. 9, the upper chips and the lower
chips of the memory devices 12-1 to 12-4 and 22-1 to 22-4 are not
operated simultaneously. Since the upper chips and the lower chips
of the front and rear surfaces are alternatingly operated, the heat
generated may be reduced compared to when the upper and lower chips
are operated simultaneously.
[0049] FIG. 10 is a plan view illustrating multi-chip memory
devices according to embodiments of the present invention mounted
on a memory module substrate according to other embodiments of the
present invention. In the memory module of FIG. 10, the system
clock signal (CLK0) is applied to the memory devices 12-1 and 12-2
arranged in the dotted line portion 10' and the memory devices 22-1
and 22-2 arranged in the dotted line portion 20', and the system
clock signal (CLK1) is applied to the memory devices 12-3 and 12-4
arranged in the dotted line portion 10' and the memory devices 22-3
and 22-4 arranged in the dotted line portion 20'. Therefore, since
the system clock signals (CLK0, CLK1) are divided and applied to
some of the memory devices on the front surface and some of the
memory devices on the rear surface, the load of the system clock
signal line may be reduced, which can provide increased signal
transmission speed. Also, since the upper and lower chips of the
memory devices are not operated simultaneously, performance can be
improved.
[0050] In the above embodiments, the multi-chip memory devices have
at least two chips in the package. When a multi-chip memory device
has three chips in the package, multi-chip memory devices according
to embodiments of the invention may be configured in such a way
that the chip select signal applying pins of the two chips and two
clock enable signal applying pins are connected to each other, and
the data input/output pins of the three chips are connected to each
other. Alternatively, embodiments of multi-chip memory devices may
be configured in such a way that three chip select signal applying
pins of the three chips and three clock enable signal applying pins
are externally configured, and the data input/output pins of three
chips are connected to each other.
[0051] Similarly, in memory modules according to embodiments of the
present invention in which each of a plurality of multi-chip memory
devices including three chips are mounted, the memory modules may
be configured in such a way that data is input into or output from
one or more of the three chips of each of a plurality of the memory
devices in response to two chip select signals and two clock enable
signals, or in response to three chip select signals and three
clock enable signals.
[0052] As described above, in multi-chip memory devices according
to embodiments of the present invention, since the chips in the
multi-chip memory devices are individually operated, heat may be
reduced and, therefore, the performance of the memory devices may
be improved. Also, in memory modules according to some embodiments
of the present invention, since the chips in the memory device may
be individually operated, heat may be reduced and, therefore, the
performance of the memory modules may be improved. In addition,
memory modules and control methods according to embodiments of the
present invention can improve the reliability of module operation
because chips in the memory device can be independently operated.
Thus, overheating may be reduced or eliminated.
[0053] In the drawings and specification, there have been disclosed
typical preferred embodiments of the invention and, although
specific terms are employed, they are used in a generic and
descriptive sense only and not for purposes of limitation, the
scope of the invention being set forth in the following claims.
* * * * *