U.S. patent application number 09/196809 was filed with the patent office on 2002-02-21 for method of wafer level burn-in.
Invention is credited to BUDNAITIS, JOHN J., LEONG, JIMMY.
Application Number | 20020021138 09/196809 |
Document ID | / |
Family ID | 25003947 |
Filed Date | 2002-02-21 |
United States Patent
Application |
20020021138 |
Kind Code |
A1 |
BUDNAITIS, JOHN J. ; et
al. |
February 21, 2002 |
METHOD OF WAFER LEVEL BURN-IN
Abstract
The present invention relates to a system and method for
performing reliability screening on semi-conductor wafers and
particularly to a highly planar burn in apparatus and method for
uses including wafer level burn-in (WLBI), diced die burn-in
(DDBI), and packaged die burn-in (PDBI). The burn-in system
includes a burn-in substrate with a planar base, a temporary Z-axis
connecting member, and a Z-axis wafer level contact sheet
electrically coupled to one another for screening wafers, diced
die, and packaged electronic components, their assembly and
use.
Inventors: |
BUDNAITIS, JOHN J.; (EAU
CLAIRE, WI) ; LEONG, JIMMY; (EAU CLAIRE, WI) |
Correspondence
Address: |
VICTOR M GENCO JR
W L GORE & ASSOCIATES INC
551 PAPER MILL ROAD
NEWARK
DE
197149206
|
Family ID: |
25003947 |
Appl. No.: |
09/196809 |
Filed: |
November 20, 1998 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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09196809 |
Nov 20, 1998 |
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08747168 |
Nov 8, 1996 |
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5896038 |
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Current U.S.
Class: |
324/750.05 |
Current CPC
Class: |
G01R 31/2863
20130101 |
Class at
Publication: |
324/760 |
International
Class: |
G01R 031/02 |
Claims
1. A method of burn-in screening of electronic components
comprising: contacting a semiconductor wafer with a burn-in unit
having a base member with a planarity of less than about 0.01
inches per linear foot and a coefficient of thermal expansion that
matches the coefficient of thermal expansion of the wafer; and
generating a test signal and conveying said test signal through
said burn-in unit to conductive pads on said wafer under elevated
temperatures.
2. The method according to claim 1, wherein said burn-in is
conducted at a temperature of at least about 125.degree. C.
3. The method according to claim 1, wherein said burn-in is
conducted at a temperature of at least about 150.degree. C.
4. The method according to claim 1, wherein said burn-in is
conducted at a temperature between about 125.degree. C. and
200.degree. C.
5. The method according claim 1, comprising burn-in screening
semiconductor wafers that are between about 75 mm and 300 mm in
diameter.
6. The method according to claim 1, comprising burn-in screening
semiconductor wafers between about 150 mm and 200 mm in
diameter.
7. The method according to claim 1, comprising burn-in screening
semiconductor wafers between about 200 mm and 300 mm in
diameter.
8. A method of burn-in screening of electronic components
comprising: contacting conductive bumps of a high planarity burn-in
system with conductive pads of an electronic component, said bumps
being uniformly configured and having a substantially planar tip;
and generating a test signal and conveying said test signal through
said conductive bumps to said conductive pads on said electronic
component.
9. The method according to claim 8, comprising burn-in screening
semiconductor wafers between about 75 mm and 300 mm in
diameter.
10. The method according to claim 8, comprising burn-in screening
semiconductor wafers between about 200 mm and 300 mm in
diameter.
11. The method according to claim 9, wherein said burn-in is
conducted at a temperature of at least about 125.degree. C.
12. The method according to claim 9, wherein said burn-in is
conducted at a temperature of at least about 150.degree. C.
13. The method according to claim 9, wherein said burn-in is
conducted at a temperature between about 125.degree. C. and
200.degree. C.
14. The method according to claim 9, wherein a bump tip of between
about 10 .mu.m to 50 .mu.m in diameter contacts said conductive
pads.
Description
RELATED APPLICATIONS
[0001] The present application is a continuation of copending U.S.
patent application Ser. No. 08/747,168 filed Nov. 8, 1996,
allowed.
FIELD OF THE INVENTION
[0002] The present invention relates to a system and method for
performing reliability screening on semi-conductor wafers and
particularly to a highly planar burn in apparatus and method for
uses including wafer level burn-in (WLBI), diced die burn-in
(DDBI), and packaged die burn-in (PDBI). More specifically, the
present invention relates to a burn-in system that includes a
burn-in substrate with a planar base, a temporary Z-axis connecting
member, and a Z-axis wafer level contact sheet electrically coupled
to one another for screening wafers, diced die, and packaged
electronic components, their assembly and use.
BACKGROUND OF THE INVENTION
[0003] Semiconductor manufacturers who make integrated circuit
chips begin by manufacturing semiconductor wafers. Each wafer is
typically 100 mm, 125 mm, 150 mm, 200 mm or 300 mm in diameter and
contains anywhere from one to several thousand chips or die on the
wafer. When manufacture of the wafer is completed, chips or die are
cut or "diced" from the wafer and may later be mounted into single
chip or multiple chip packages for implementation in a printed
circuit board or other applications.
[0004] When manufacture of a wafer is completed, it is customary
practice to test each chip on the wafer to determine whether each
chip, as manufactured, electrically matches design criteria,
matches performance criteria of the system in which the chip is to
be implemented, and will be reliable in operation. If a chip fails
electrical testing or reliability testing, the chip is not suitable
for implementation in a system without repairing the chip or
exercising redundancy features which may have been designed into
the chip. Performance testing of chips may be used to speed sort
chips into different categories suitable for different applications
and sale at different prices.
[0005] Reliability testing is used to screen out chips having an
undesirable short life span. Typically, a significant percentage of
a group of chips will fail early in their lifetime due to marginal
conditions during manufacture. Subsequently, a very low percentage
of the group will fail during an extended period of use of the
chips. Reliability screening of semiconductor chips is typically
performed by a process of supplying test signal patterns to chips
under test to repeatedly stimulate all devices and wires on a chip,
and is typically performed at elevated temperatures to simulate the
first six months of operation. Therefore, the screening procedure
is known as burn-in.
[0006] Burning in chips tends to induce accelerated failures. Two
examples of such failures are contamination induced failure at via
interfaces, and gates and junctions, and in metal wires malformed
during manufacture which may neck down to very thin regions on the
order of 50% of the design width, which varies by technology and
time but, is presently 0.35 .mu.m. The metal in these necked down
regions will tend to drift in the direction of electrical current
flow by a mechanism known as electromigration, where the rate of
drift is directly proportional to current density, accelerated by
elevated temperature. Upon sufficient electromigration, an open
circuit condition will occur in the necked down region of the metal
and cause a logical failure of the chip for some test signal
patterns. Gate oxide regions where transistors are formed using FET
transistor technology are also a frequent source of reliability
failure. The thickness of a gate oxide region of a transistor must
be controlled within exacting tolerances. If the gate oxide region
of one or more transistors on a chip, as manufactured, is too thin,
the gate oxide may break down due to high electric fields within
the transistor when test patterns are applied to the chip. Upon
failure, output from the test patterns will evidence a failure.
[0007] While very valuable, the process of burn-in has historically
been time consuming and expensive for semiconductor manufacturers.
Existing burn-in is typically performed on integrated circuits at
temperatures between 90.degree. C. to 125.degree. C., for anywhere
between 24 to 168 hours. Obviously, this slow rate of reliability
testing impedes volume production of functional semiconductors and
adds tremendous cost.
[0008] Many manufacturers have attempted to address low throughput
of known burn-in processes by creating burn-in boards onto which
many diced chips are placed in chip packages, and then the packages
go into sockets on the burn-in boards. Thereafter, each chip on the
test board is simultaneously exercised with test patterns at
elevated temperatures. Thus, many chips are burned-in at once.
These systems effectively reduce the time required to burn-in a
large volume of chips. However, the added cost of packaging
defective or unreliable die is a significant shortcoming of such
known burn-in processes.
[0009] Bare die burn-in (BDBI) is required to provide Known Good
Die (KGD) determinations for multi-chip module's (MCM's) and other
bare die applications, such as, chip-on-board (COB). Without bare
die burn-in, yield of MCM's (and other bare die applications) is
severely impaired, resulting in higher product costs. Current BDBI
is typified by the Texas Instrument's "Die Mate".RTM. (product
where a bare die is placed into a temporary package and the burn-in
test is performed. The required alignment and handling steps in
this procedure add cost, process complexity, and time to provide
bare dies that will be reliable or "Known Good."
[0010] Another technique for improving throughput of the burn-in
process is to perform burn-in on whole or parts of whole wafers
containing undiced integrated circuits or chips. This process is
known as wafer level burn-in (WLBI). In wafer level burn-in,
electrical terminals from a test apparatus are brought into
intimate contact with contact pads of one or more chips. It is
therefore less destructive than soldering chips to a burn-in board.
However, problems of planarity of electrical terminals of the test
apparatus and with mismatch between the coefficient of thermal
expansion of the test apparatus and the wafer under test exist.
[0011] These problems have been addressed to date by several
different techniques. For example, the industry uses a material
known as CIC which is a high pressure, high temperature, lamination
of copper on the outside of an interior INVAR sheet. One of the
drawbacks with this material is that the maximum thickness it can
obtain is in sheets that are 62 mils thick. A second drawback is
that when CIC is manufactured, it is rolled on a big spool. As a
result, material from the outside of the spool to the inside of the
spool has a different plastic deformation and hence radius of
curvature.
[0012] Another drawback with the rolled CIC is that in order to get
the desired thickness and planarity, four pieces of CIC must be
laminated together. There must be an even number of CIC layers
because two layers may be curved down and one may be curved up.
This results in an over balance in one direction or the other. So
the number of CIC sheets must be an evennumber--2, 4 or 6. The
drawback of using so many sheets of CIC is that since CIC is very
dense, the thicker the base, the heavier it becomes.
[0013] Another disadvantage of the CIC system is that, as
manufactured, there is an individual piece of copper on both sides
of the INVAR 36 going through a lamination process through rollers.
The thickness of the copper top to bottom changes. As a result of
the different thicknesses, stress differential warpage from top to
bottom occurs, which is very detrimental during thermal excursions.
The thickness of the CIC could change as you go through the process
also. You cannot machine down the CIC to a uniform thickness
because you may machine off more on one side than the other.
[0014] Another disadvantage of the CIC system is that the material
having the highest coefficient of thermal expansion (CTE), the
copper, is on the outside. Thus, greater stress is generated with
CIC.
[0015] One technique that is used to contact a wafer employs
electrical terminals, such as S shaped probes or Pogo.RTM. pins.
With S shaped bendable wire probes, the test apparatus is brought
into proximity of the wafer, and the S shaped probes are compressed
back toward the test apparatus. The height of the test apparatus
over the wafer can then be varied to ensure contact between each of
the S shaped probes and contact pads on chips of the wafer, despite
a lack of planarity of the test apparatus and/or the wafer.
However, the S shaped probes are difficult to align to the contact
pads of the chips on the wafer because they vary in X, Y
displacement, as well as, in the Z direction on compression. Also,
the number of pins used can be on the order of 20,000 to 40,000, or
more, depending on the number of die per wafer and contacts per
die, thereby increasing the likelihood of non-alignment and
mismatched pins.
[0016] Pogo.RTM. pins suffer from shortcomings similar to the
S-shaped probes. Although Pogo.RTM. pins are compressible,
therefore compensating for some planarity differences between the
burn-in substrate and the wafer under test, Pogo.RTM. pins present
alignment challanges because the Pogo.RTM. pins must be put into a
fixture to hold them in place. The mechanical tooling can have
holes in slightly different locations due to normal tolerances.
[0017] Another technique for wafer level burn-in is described in
U.S. Pat. No. 5,541,524 to Tuckerman et al. There is disclosed a
process of creating a burn-in substrate having metallic contact
pads that are coined. Subsequently, solder is formed on the top of
the coins. The solder tops are then brought into contact with the
chip pads during burn-in testing. Here, the solder tops may not be
substantially planar, and must deform upon contact with the chip
pads. Thus, in order to achieve contact between all of the solder
tops and the chip pads, compressive forces must be applied which
may damage some portion of the chip pads. Furthermore, the solder
tops must be periodically reworked by melting them back to a
hemisphere to ensure integrity of burn-in. However, this can only
be used to test wafers smaller than the apparatus. Currently, the
system can only test 150 mm wafers if the apparatus is manufactured
on a 200 mm wafer, which does not provide a solution for testing
200 mm wafers.
[0018] Another technique for wafer level burn-in is described in
U.S. Pat. No. 4,968,931 to Littlebury et al. There, a flexible
membrane probe, having a plurality of contact pads, is compressed
against a wafer having integrated circuits with mating chip pads.
An inflatable bladder is positioned behind the flexible member
probe to bring the probe contact pads into contact with the chip
contact pads. However, the bladder can only compensate for gross
irregularities in planarity. As the bladder inflates, the membrane
is stretched moving the contact points. Thus, alignment is
difficult. Also, only a limited number of traces can be implemented
to bring signals from the wafer to the test electronics, limiting
the complexity of the system severely. In addition, the system has
a high coefficient of thermal expansion, resulting in positional
variation during thermal aging.
[0019] Thus, there exists a need to provide a wafer level burn-in
device which is highly planar and which is compliant, but at the
same time maintains the structural integrity of the contacts of the
device for contacting chip pads on a wafer. There is also a need
for a burn-in system that eliminates the need for solder reflow or
cleaning. There is also a need to provide a burn-in device having
contacts, such as bumps, which are uniformly configured, precisely
disposed, with a high degree of structural integrity for coupling
the contacts of a wafer or the board under test. There further
exists a need to provide a burn-in device with a base that has a
low coefficient of thermal expansion matched to the wafer under
test capable of successfully burning in large diameter wafers at
elevated temperatures of up to 150.degree. C., and as high as
200.degree. C.
SUMMARY OF THE INVENTION
[0020] The present invention relates to a system and method for
performing reliability screening on semi-conductor wafers that uses
a highly planar burn-in apparatus. The burn-in apparatus includes a
burn-in substrate unit with a high planarity base; a compliant,
reusable, Z-axis member unit which can optionally include an
elastomer; and a reusable Z-axis laminated wafer level contact
sheet unit.
[0021] The burn-in substrate and wafer level contact sheet are
electrically coupled to one another through the irregularly shaped
conductive Z-axis pathways that extend through the thickness of the
compliant, Z-axis member that is sandwiched therebetween. The
Z-axis pathways are electrically isolated from one another in the X
and Y axes directions.
[0022] A test signal from the burn-in substrate is conveyed to the
component being screened through bumps on the lower surface of the
wafer level contact sheet that are registered and in contact with
the component being screened. Each bump at its upper end has a 4 to
8 mil pad and terminates in a tip that has a substantially planar
configuration, and a surface diameter on the order of 0.25 mils and
2 mil (about 8 .mu.m to 50 .mu.m), and preferably 0.5 mils to 2 mil
(about 12 .mu.m to 50 .mu.m). Thus, the pad dimension to tip
dimension ratio is between 2:1 to 32:1, preferably between 4:1 to
32:1.
[0023] The laminated wafer level contact sheet unit has an upper
and lower surface and includes a plurality of uniformly configured
conductive bumps on its lower surface alignable with and
corresponding to contact pads of an integrated circuit or other
electronic component. The geometric configuration of the bump tip
is sufficient to pierce an oxide layer that is formed on the
contact pad of the semiconductor component. The laminated contact
sheet further includes a plurality of contact pads on its upper
surface, each individually electrically connected to a
corresponding conductive bump through an open cell, porous layer
having selective Z-axis conductivity.
[0024] The base unit has balancing layers disposed on an upper
portion thereof and circuitry layer on a lower portion thereof. The
base unit includes a degree of planarity that is less than 0.01
inches per linear foot, preferably 0.001 inches per linear foot.
The balancing layer may include "dummy" layers to off-set and
balance the circuitry layers. A plurality of first and second
terminals form part of the circuitry layer, with the first
terminals being coupled to a compliant, selectively conductive,
Z-axis member, which may optionally contain an elastomer. The
second terminals are connectable to a test signal generator and the
first terminals.
[0025] The selectively Z-axis conductive compliant member is
positioned between the lower surface of the base unit and the upper
surface of the wafer level laminated contact sheet unit. The
selectively conductive member comprises a planar, open cell, porous
material having an X, Y and Z axis, with vertically defined
cross-sectional areas electrically isolated in the X and Y axis
directions. The cross-sectional areas extend from one side of the
material to another side and are covered with conductive metal,
thereby being capable of electrically coupling the first terminals
to corresponding contact pads on the laminated wafer level contact
sheet unit.
[0026] The selectively conductive member of the present invention
may contain an elastomer in the porous material. When an elastomer
is used in combination with the porous substrate, the temporary
member is more reusable and less compliant than a Z-axis member
lacking an elastomer.
[0027] Generally, the burn-in screening of electronic components
includes positioning a burn-in unit in a temperature controlled
environment, so that downwardly depending conductive bumps can be
coupled to corresponding conductive pads of an electronic component
to be screened. When the test signal is generated, it is conveyed
through the burn-in unit to the conductive pads of the electronic
component. The screening is usually conducted at a temperature of
at least 90.degree. C., preferably between 125.degree. C. and
200.degree. C., for 8 to 168 hours, preferably between 8 and 24
hours. The time of screening depends on th burn-in temperature,
lower temperatures, longer burn-in time. Test signals are conveyed
from said the terminal to the first terminals, a first set of
Z-axis condcutive pathways, a second set of Z-axis conductive
pathways through conductive bumps.
[0028] More specifically, the present invention provides a system
for burn-in screening of electronic components, such as an
integrated circuit or a semiconductor wafer, for example, where the
wafer is contacted with a burn-in unit having a base member with a
planarity of less than 0.01 inches per linear foot and a
coefficient of thermal expansion that matches the coefficient of
thermal expansion of the wafer, +/-3 ppm. The generated test signal
is conveyed through the burn-in unit to conductive pads on a
wafer.
[0029] The present invention also relates to a burn-in screening
procedure where conductive bumps of a high planarity burn-in system
are coupled to conductive pads of an electronic component. The
bumps have tips between about 10 .mu.m to 50 .mu.m in diameter.
[0030] Other objects, advantages and salient features of the
invention will become apparent from the following detailed
description, which taken in conjunction with the annexed drawings
discloses the preferred, but non-limiting, embodiment of the
invention.
BRIEF DESCRIPTION OF THE DRAWINGS
[0031] FIG. 1 depicts a wafer having a plurality of integrated
circuit chips formed thereon, each chip including a pattern of
contact pads for electrical connection to the chip.
[0032] FIG. 2 depicts a burn-in device for wafer level burn-in with
the conductive bumps of the laminated contact sheet raised prior to
contacting the wafer.
[0033] FIG. 3 depicts the burn-in device of FIG. 2 with the
conductive bumps of the laminated contact sheet in intimate contact
with the contact pads of the wafer.
[0034] FIG. 4 depicts an alternate embodiment of a burn-in device,
in which intimate contact between the laminated contact sheet and
the wafer under test is controlled by an inflatable bladder.
[0035] FIG. 5 depicts the base unit with upper balancing "dummy"
layers and lower good "circuitry" layers according to the present
invention.
[0036] FIG. 6 depicts a base unit having signal layers, a low CTE
base layer, and five balancing layers.
[0037] FIG. 7 depicts a cross-sectional view of the pad layer
showing contact pads and via holes through a dielectric layer.
[0038] FIG. 8 depicts a view of a signal layer illustrating signal
traces on a dielectric layer.
[0039] FIG. 9 depicts a cross-sectional view through the low CTE
base layer illustrating its component layers.
[0040] FIGS. 10-12 schematically show the formation of irregular
Z-axis pathways extending through an open cell, porous
substrate.
[0041] FIG. 13 depicts a porous substrate having isolated, Z-axis
conductive pathways extending through the thickness of the
substrate and terminating in conductive surface contacts.
[0042] FIGS. 14 is a scanning electron micrograph of ePTFE material
that is used to prepare a Z-axis material which has a density of
0.22 gm/cm.sup.3, a thickness of 76 .mu.m and an air void volume of
70%.
[0043] FIG. 15 is a scanning electron micrograph of an ePTFE
material that is used to prepare a Z-axis material which has a
density of 0.40 gm/cm.sup.3, a thickness of 40 .mu.m and a 20% air
void volume.
[0044] FIG. 16 is a scanning electron micrograph of an ePTFE
material that is used to prepare a Z-axis material which has a
density of 0.35 gm/cm.sup.3, a of thickness 100 .mu.m and a 70% air
void volume.
[0045] FIG. 17 is a scanning electron micrograph of an ePTFE
material that is used to prepare a Z-axis material which has a
density of 0.20 gm/cm.sup.3, a thickness of 150 .mu.m and an 70%
air void volume.
[0046] FIG. 18 shows an 8 mil pad on a Z-axis material.
[0047] FIG. 19 shows an array of 8 mil pads with a 15 mil pitch on
a Z-axis material.
[0048] FIGS. 20-34 depict the process sequence for forming the
laminated wafer level contact sheet of the present invention.
[0049] FIG. 35 is a scanning electron micrograph of a bump formed
on the wafer level contact sheet of the present invention.
[0050] FIG. 36 shows an enlarged view of the via and surrounding
photoresist for form a conductive bump on the wafer level contact
sheet of the present invention.
[0051] FIG. 37 shows an isolated conductive bump and its
dimensions.
[0052] FIG. 38 shows a scanning electron micrograph of an ePTFE
material used for preparing an adhesive-filler composite.
DETAILED DESCRIPTION OF THE PRESENT INVENTION
[0053] The burn-in apparatus of the present invention includes: (1)
a burn-in substrate unit with a high planarity base; (2) a
compliant, reusable, Z-axis member unit, optionally containing an
elastomer; and (3) a reusable, Z-axis laminated wafer level contact
sheet unit, in a stacked array, and its assembly. The burn-in
substrate unit, which contains circuitry layers on a lower portion
or surface thereof, and the wafer level contact sheet are
electrically coupled to one another when the compliant, reusable,
Z-axis member unit is positioned therebetween.
[0054] In FIG. 1 a semiconductor wafer 1 is shown having a
plurality of chips 2. The wafer 1 can be a silicon wafer or any
other suitable material such as, germanium, silicon germanium,
silicon carbide, gallium arsenide, selenium, tellurium, InSb, BP,
CdS, ZnSe, ZnTe, PbS, InP, PbSe, PbTe, InAs, GaSb, ZnS and
Bi.sub.2Te.sub.3. Each chip 2 on the wafer 1 has a plurality of
contact pads 3 that are brought into electrical contact with the
test apparatus to be described during testing. The chips 2 may be
memory chips such as, but not limited to, dynamic random access
memories (DRAMS), application specific integrated circuits (ASICS),
analog chips, or any combination thereof. Chips 2 are typically
arranged in columns 4, or rows 5 on the wafer so that upon
completion of testing, the chips can be cut or "diced" from the
wafer by sawing along the channels. Subsequently, diced chips are
used in applications by packaging them in single chip modules
(SCM), multi-chip module (MCM), or mounting them directly on a
printed circuit board (COB).
[0055] The pretesting mode of the burn-in apparatus of the present
invention is seen in FIG. 2. The burn-in apparatus 6 includes a
base unit 7, a compliant, selectively conductive Z-axis member 8
which may contain an elastomer, a laminated wafer level contact
sheet 9, a chuck 15 for receiving a semiconductor wafer 1, and a
test signal generator 10. The base unit 7 has a highly planar
structure and is positioned above the wafer 1, and extends beyond
the edge or edges of the wafer 1.
[0056] The base unit includes an upper surface 11 and a lower
surface 12. The lower surface 12 includes a plurality of first
terminals 13 and second terminals 14. The first terminals 13 and
second terminals 14 are electrically coupled together within the
base unit 7.
[0057] The first terminals 13 are grouped in the center of the base
unit 7, above the wafer 1 having a corresponding pattern to the
pattern of contact pads of the chips 2 on the wafer 1. The second
terminals 14 are also on the lower surface 12 of the base unit 7,
and are grouped outside of the periphery of the first terminals 13.
The second terminals 14 may form a ring around the first terminals
13, may be grouped substantially on one side of the first
terminals, or may be distributed over the entire lower surface 12
of the base unit 7 outside of the grouping of the first terminals
13. The second terminals 14 are connectable to the test signal
generator 10 at contacts 19.
[0058] A jig 16 encompasses the burn-in system and includes a
mechanism 17 that can apply pressure to base 7 to engage Z-axis
material 8 and contact sheet 9 to have the bumps 18 thereon engage
the pads of the wafer 1. The bumps are best seen in FIGS. 34 and
35.
[0059] As shown schematically in FIG. 3, the connection between
terminals 14 and generator 10 may be accomplished by raised members
terminating in a plurality of compressible pins 14, such as
Pogo.RTM. pins or S shaped pins, on an upper surface 20. The
compressible pins 21 are electrically coupled through the raised
members to the test signal generator 10 and are arranged in a
mating pattern to the pattern of second terminals 14 on the base
unit 7.
[0060] The laminated wafer level contact sheet 9 of the present
invention may be substantially the same size as the wafer 1 and has
contact pads 20 arranged in a pattern corresponding to the first
terminals 13 and the contact pads 3 on the wafer 1. The terminals
13 are contact pads which are formed from at least one metal layer,
such as copper, nickel, gold, platinum, palladium or cobalt, with a
layer thickness of between 1 .mu.m and 50 .mu.m, and dimensions of
between 25 .mu.m.times.25 .mu.m and 250 .mu.m.times.250 .mu.m, and
any desired shape.
[0061] The contact pads 20 on the surface of the laminated wafer
level contact sheet 9 are aligned to the first terminals 13 on the
base unit 7 and are temporarily attached to the lower surface of
the base unit by the selectively conductive member 8. The
selectively conductive member 8 provides electrical contact between
the first terminals 13 of the base unit 7 and the contact pads 20
on the laminated wafer level contact sheet 9.
[0062] The wafer level contact sheet 9 also has raised bumps 18 on
a lower surface thereof that terminate in a tip having a diameter
of 0.25 to 2.0 mils. The raised bumps 18, best seen is FIGS. 34 and
35, are identified as reference numeral 67. The raised bumps 18
have a pattern corresponding to the contact pads 3 on the wafer 1
and are individually electrically coupled to the contact pads 20 on
the upper surface of the laminated wafer level contact sheet 9,
best seen in FIG. 34.
[0063] When a wafer 1 is place on the chuck 15, the wafer 1 is
aligned so that the pattern of contact pads 3 on the wafer 1
corresponds to the pattern of raised bumps 18 on the laminated
wafer level contact sheet 9. Alignment may be accomplished by any
of several techniques, including optical alignment, infrared
alignment, x-ray alignment, or mechanical alignment, such as, using
pits formed on the wafer level contact sheet 9 which mate to
protrusions on the wafer 1 (not shown). The wafer 1 may be held to
the chuck 15 by a mechanical jig 16 and 17, by creating a vacuum
(not shown) between the wafer 1 and the chuck 15, or by mechanical
coupling.
[0064] FIG. 3 depicts the burn-in apparatus of FIG. 2, wherein the
raised bumps 18 of the laminated wafer level contact sheet 9 have
been brought into intimate contact with the contact pads 3 of the
wafer 1. Also, the second terminals 14 on the base unit 7 have been
brought into contact with the compressible pins 21 on the test
signal generator 10. Alternatively, contact may be made by a piston
which pushes the raised bumps of the burn-in device against the
contact pads 3 of the wafer 1 and the second terminals 14 against
the compressible pins 21 of the test signal generator 10. Contact
may be accomplished by creating a vacuum between the raised member
of the test signal generator and the base unit.
[0065] A heating element (not shown) may be included within the
chuck 15 for supplying heat to the wafer 1 in order to elevate the
temperature of integrated circuits on the chips 2 under test to a
desired burn-in temperature. In cases of high-power chips on the
wafer, heat produced by the chips 2 under test may elevate the
temperature of the integrated circuits above the desired burn-in
temperature. In such a case, the wafer may be cooled by blowing
cold air over the wafer, by including a cooling element in the
chuck 15, or by many other known techniques. Alternatively, the
entire jig may be located within a temperature controlled
environment to provide the elevated temperatures for the burn-in
procedures. Techniques for controlling temperature in semiconductor
manufacturing and testing are well known.
[0066] FIG. 4 depicts an alternate embodiment of the invention,
wherein compressive force applied to the burn-in device 6 is
supplied by an inflatable bladder 24 having a source of fluid (not
shown) through valve conduit 25. Inflation may be accomplished with
liquid or a gas, and may tend to compensate for any tilting of the
burn-in device relative to the wafer under test.
[0067] In an alternate embodiment of the invention, the test signal
generator 10 may be coupled to the second terminals 14 by a variety
of techniques, including by a rigid connector or flexible
conductive tape. The second terminals 14 may be located on the
surface 12 of the burn-in device, arranged in a pattern
substantially contained within the area of the wafer 1 below. In
this scenario, the burn-in device 6 itself might be no greater in
size than the wafer itself.
[0068] Base Unit:
[0069] The base unit is best seen in FIG. 5 and includes a high
planarity base 25 formed from low coefficient of thermal expansion
(CTE) material or having a matched composite CTE obtained through
laminated layers of low and high CTE material. The base unit
includes a stack of good circuitry layers 26, each layer includes a
metal layer and a dielectric layer. Layer 27 of the base unit 7
includes dummy layers 27 which are used to balance circuitry layers
26. The lower surface 28 includes the first and second terminals 13
and 14.
[0070] FIG. 6 depicts a base unit of the present invention which
includes good circuitry layers 32, a low CTE base 31 or base 31
having a low composite CTE or matched CTE, and balancing layers 30.
The base unit 29 has a pad layer 33, three signal layers 34, 36 and
37, a core layer 35, a low CTE base layer 31, and balancing layers
30. Layers 33-37 form the "good" circuitry layers 26 of base unit
29. Having three signal layers, 34, 36 and 37 facilitates routing a
large number of signals between the first and second terminals 13
and 14 of the base unit 29. Positioning the core layer 35 between
signal layers provides predictable impedance for signal traces on
each of the signal layers 34, 36, 37 and reduces electrical noise
within the base unit 29. The low-CTE base 31 constrains thermal
expansion of the base unit 29 and contributes to maintaining high
planarity of the base unit 29. Although the good layers 33-37 and
balancing layer 30 have 5 layers, more or less layers are
possible.
[0071] The balancing layers 30 are preferably as numerous as the
number of "good" circuitry layers 26. The balancing layers should
match the copper and dielectric density of the corresponding layers
within the "good" circuitry layers 26 on the opposite side of the
low-CTE base 31. Matching the density on opposing sides of the low
CTE base 31 helps maintain the planarity of the base unit 29.
[0072] The balancing layers 30 may not contribute at all to the
electrical performance of the base unit 29 and may be used entirely
to maintain the planarity of the base unit 29. Therefore, the
balancing layers 30 may be implemented with signal layers and core
layers that have been scrapped due to manufacturing defects but
which have a substantially similar density to corresponding "good"
signal layers 34, 36, 37 and core layers 35 on the opposite side of
the low-CTE base. However, the balancing layers could be additional
"good" circuitization layers.
[0073] The core layer 35 is formed with a continuous sheet of
conductive material laminated to a dielectric layer. The conductive
material can be half-ounce copper, or one ounce copper. In place of
copper, any metal having a high CTE could be used, such as, but not
limited to, stainless steels, molybdenum, etc. The sheet of
conductive material may be a substantially continuous plane, or the
sheet of conductive material may be a mesh. The core layer 35 may
be connected to the second terminals 14 and carry a voltage such as
power or ground to decouple noise from signal traces 43 on signal
layers 34, 36, 37 (shown in FIG. 8). Furthermore, the core layer 35
gives the signal traces 43 above or below a predictable impedance
based on the dielectric constant of the dielectric, the geometry of
the signal traces 43, and the height of signal traces 43 above or
below the metal plane of the core layer 35. The core layer 35 may
be pierced by vias 41 (shown in FIG. 7) allowing electrical
coupling of signal layers 34, 36, 37 on opposite sides of the core
layer 35. Furthermore, the core layer 35 may be coupled directly to
the first terminals 13 on the pad layer 33 through vias 41 to
supply power or ground to the wafer 1 under test.
[0074] In an alternate embodiment of the invention, the balancing
layers 30 may be electrically incorporated into the base unit 29 by
routing active signal traces on the balancing layers, and coupling
the signal traces to the first and second terminals 13 and 14 by
vias 41 through the low CTE base 31 or by a C-shaped flex circuit
spanning the upper and lower surfaces of the base unit 29.
Furthermore, the balancing layers 30 could support one or more
active or passive circuits which facilitate the burn-in testing of
wafers.
[0075] FIG. 7 depicts an inverted view of the pad layer 33. The pad
layer 33 has electrically conductive contact pads 38 disposed
against a dielectric layer 39. The contact pads 38 are dispersed
across a surface 40 of the dielectric layer 39 of the pad layer 33
and implement the first and second terminals 13 and 14 of the base
unit 7 or 29. Pads 38 may be raised above the surface of the
dielectric, as shown, and may have any desired shape including
circular, rectangular, conical, and trapezoidal. In one embodiment
of the invention, the contact pads 38 are circular and made of a
lower layer of copper with an outer coating of nickel or gold to
resist corrosion and reduce contact resistance. However, the outer
material may be any noble metal, such as, but not limited to,
platinum or palladium. Similarly, the outer metal layer of contact
pads 38 may also be any non-oxidative metal or metal alloy. The
copper of the contact pads 38 is preferably formed from a base
copper foil by a subtractive etch process well known in the art.
Subsequently, an outer coating may be formed onto the copper using
any technique including plating by an electrolytic or electroless
process. Vias 41 are shown formed in the dielectric layer 39 of the
pad layer 33 beneath the contact pads 38. Vias holes 41 may be
formed in the dielectric layer 39 by many known techniques
including drilling and laser ablation.
[0076] Generally, various ePTFE-based dielectric materials can be
laser drilled using mode-locked solid states lasers operating in
the UV range, and in particular, those capable of producing energy
densities in the range of 0.5 to 20 J/cm.sup.2 and those capable of
making in-situ and virtually instantaneous changes in the energy
density by varying the pulse repetition rate from 1000 to 10000 Hz.
These variations in pulse repetition rate result in variations in
the pulse width for Nd:YAG lasers of between 40 and 100 ns. In
general, when performing a post-pulse step to ablate dielectric
residue after an initial ablation step, the pulse density can be
double for a brief time period, whereby 1-10 pulses may
typically
[0077] In one embodiment of the present invention, the blind vias
are formed with lasers that are solid state pulsed lasers such as
the pulsed Nd:YAG laser. The fundamental output from the Nd:YAG
laser is at a wavelength of 1064 nm. This wavelength is in the
infrared portion of the electromagnetic spectrum. By installing
beta-Barium Borate (BBO) crystals in the optical path harmonic
generation facilitates the output of light at 355 nm (third
harmonic) and 266 nm (fourth harmonic), which fall in the
ultraviolet range.
[0078] The 355 nm and 266 nm wavelengths are particularly well
suited for drilling vias in the laminated substrates of the present
invention. The pulse length, energy density and number of pulses
can be varied depending on the type of via being formed and the
type of materials used in the laminated substrate.
[0079] For example, for drilling blind vias in a laminated
substrate made of alternating layers of copper and an
adhesive-filler-ePTFE dielectric, and using a 266 nm laser, the
energy density is 1.5 J/cm.sup.2, the energy per pulse is 10 .mu.J,
and the power density is 20 megawatts per cm.sup.2. At the 355 nm
wavelength, blind vias are formed by setting the energy density at
3.5 J/cm.sup.2, the energy per pulse is 30 .mu.J, and the power
density is 35 megawatts per cm.sup.2. The post-pulse step for the
355 nm blind via requires adjusting the conditions such that the
energy density is 11 J/cm.sup.2, the energy per pulse is 100 .mu.J,
and the power density is 200 megawatts per cm.sup.2.
[0080] When forming blind vias in the adhesive-filler-ePTFE
dielectric, using the 355 nm laser, the energy density is 7
J/cm.sup.2, the energy per pulse is 65 .mu.J, and the power density
is 100 megawatts per cm.sup.2. A post-pulse step would require
adjusting the parameters such that the energy density is 11
J/cm.sup.2, the energy per pulse is 100 .mu.J, and the power
density is 200 megawatts per cm.sup.2. be used.
[0081] The via holes 41 may then be plated with a metal, for
example copper, to create a conductive path from the contact pads
38 on the upper surface 40 of the pad layer 33 to the lower surface
42 of the pad layer 33.
[0082] One or more signal layers, 34, 36, 37 is disposed above the
pad layer 33. However, the pad layer 33 is optional and the contact
pads 38 described as part of the pad layer 33 above may be
implemented directly on the signal layer 34. The signal layers 34,
36, 37 comprise a plurality of conductive segments or signal traces
93 distributed across a dielectric layer as shown in FIG. 8.
[0083] As seen in FIG. 8, the signal traces 43 create a conductive
path 44 between the first terminals 13 and the second terminals 14
of the base unit 7 or 29. The signal traces 43 are typically and
preferably copper, formed by a process of subtractive etching. A
complete conductive path from the first terminals 13 to the second
terminals 14 may be formed by creating a path from a first terminal
13, up through a via hole 91 (not shown) in the dielectric layer 39
of the pad layer 33 to a signal trace 93 on a signal layer, across
the signal trace 93 of the signal layer to another via hole going
down through the dielectric of the pad layer 33 to a corresponding
second terminal 14. Similarly, first and second terminals 13 and 14
may be electrically connected by a more complex path of signal
traces 43 and vias 41 spanning multiple signal layers.
[0084] FIG. 9 depicts the low CTE base 31 according to one
embodiment of the invention. The base 31 is formed from a three ply
stack of INVAR 36, copper and INVAR 36, respectively layers 45, 46
and 47. Instead of INVAR 36, a nickel and iron alloy containing
between 30 wt. % and 42 wt. % nickel may also be used.
Additionally, in place of INVAR 36 and layers 45 and 47, any low
CTE material matched to the wafer unit test device, including but
not limited to nickel alloys, may be used. The two nickel alloy
sheets have a combined thickness t.sub.1 and the copper sheet 46
has a thickness t.sub.2, wherein a ratio t.sub.1 to t.sub.2 is
chosen to match the coefficient of thermal expansion of a
semiconductor wafer. The t.sub.1 to t.sub.2 ratio can be between
4:1 and 14:1, including, but not limited to ratios of 10:1, 11:1
and 12:1.
[0085] In one embodiment of the present invention, the nickel
layers each have a thickness of approximately 115 mils, and the
ratio of the nickel layers to the copper layer provides a
coefficient of thermal expansion that matches a silicon wafer.
However, the ratio of the nickel layer thickness, or other material
thickness, to the copper layer thickness provides a coefficient of
thermal expansion for the base that matches the coefficient of
thermal expansion for a wafer formed from germanium, silicon
germanium, silicon carbide, gallium arsenide, selenium and
tellurium.
[0086] Nickel alloys have a low coefficient of thermal expansion,
and therefore act to constrain the expansion of the base unit 31
relative to the wafer 1 as temperature increases. Preferably a
fourteen inch square sheet of INVAR 36 and copper material are
used. However, circular or rectangular sheets may be used. The
sheets are between six and twenty inches in dimension, i.e.,
diameter or side length, such as, eight, twelve, fourteen, sixteen
and twenty inches.
[0087] The INVAR 36 and sheets 45 and 47 are each preferably
machined to approximately 115 mils thick with a degree of planarity
between 0.020 and 0.0001 inches per linear foot, preferably between
0.01 and 0.0001 inches per linear foot. Most preferably, the degree
of planarity is 0.001 inches per linear foot.
[0088] The copper layer 46 is approximately 21 mils thick and has a
planarity of 0.0005 inches per linear foot. The copper layer
comprises approximately 8% to 10%, e.g., 9.1%, of the total
thickness of said metal or metal alloy layers and said copper
layer.
[0089] The stack of INVAR 36, copper, and INVAR 36 is formed by
laminating each piece of INVAR 36 to a surface of the copper using
a dielectric 48, such as Speedboard.RTM. C, which is available from
W. L. Gore and Associates, and which is described below. The
dielectric layers of the low CTE base are between 25 .mu.m and 250
.mu.m thick.
[0090] Sheet thicknesses of 115 mils and 21 mils of the nickel
alloy and copper sheets respectively are used in one embodiment,
but any dimensions may be chosen, so long as the thickness of
nickel alloy sheets is greater than the thickness of the
copper.
[0091] Dielectric:
[0092] The dielectric materials used for the base unit and wafer
level contact sheet of the present invention can be any high
temperature dielectric material. For example, suitable dielectric
materials include, but are not limited to polyimides and polyimide
laminates, epoxy resins, organic materials, or dielectric materials
comprised at least in part of polytetrafluoroethylene, with or
without a filler, where once the adhesive has been impregnated, it
has been partially cured and forms a B-stage material. Suitable
materials include Speedboard.RTM. bond plies available from W. L.
Gore and Associates, Inc. As should be understood, Speedboard.RTM.
C does not contain a ceramic filler and is a prepreg of non-woven
material containing a cyanate ester resin in a
polytetrafluoroethylene matrix. Speedboard C.RTM. has a dielectric
constant, (Dk) of about 2.6-2.7 at 1 MHz-10 GHz, a loss tangent of
0.004 at 1 MHz-10 GHz, a dielectric strength greater than 1000
V/mil, a glass transition and a T.sub.g of 220.degree. C., a resin
content of 66-68 wt. % and is available in a variety of
thicknesses.
[0093] Other classes of dielectric materials include those where a
porous matrix system contains an imbibed or impregnated
adhesive-filler mixture. The porous matrix is a non-woven substrate
that is imbibed with high quantities of filler and a thermoplastic
or thermoset adhesive, as a result of the initial void volume of
the substrate, heated to partially cure the adhesive and form a
B-stage composite. Substrates include fluoropolymers, such as the
porous expanded polytetrafluoroethylene material of U.S. Pat. No.
3,953,566 to Gore and U.S. Pat. No. 4,482,516 to Bowman, et al.,
each of which is incorporated herein by reference. Desirably, the
mean flow pore size (MFPS) should be between about 2 to 5 times or
above that of the largest particulate, with a MFPS of greater than
about 2.4 times that of the filler being particularly preferred.
However, it is also within the scope of the invention that suitable
composites can be prepared by selecting the mean flow particle size
MFPS to average particle size ratio to be greater than 1.4.
Acceptable composites can also be prepared when the minimum pore
size to average particle size is at least above 0.8 or the minimum
pore size to the maximum particle size is at least above 0.4. The
MFPS to particle size ratio ratios being performed with a microtrak
FRA analyzer.
[0094] Alternatively, another mechanism for gauging relative pore
and particle sizes may be calculated as the smallest pore size
being not less than about 1.4 times the largest particle size.
[0095] In addition to expanded fluoropolymer substrates, porous
expanded polyolefins, such as ultra high molecular weight (UHMW)
polyethylene, expanded polypropylene, polytetrafluoroethylene made
prepared by paste extrusion and incorporating sacrificial fillers,
porous inorganic or organic foams, microporous cellulose acetate,
can also be used.
[0096] The porous substrate has an initial void volume of at least
30%, preferably at least 50%, and most preferably at least 70%, and
facilitates the impregnation of thermoset or thermoplastic adhesive
resin and particulate filler paste in the voids while providing a
flexible reinforcement to prevent brittleness of the overall
composite and settling of the particles.
[0097] The filler comprises a collection of particles when analyzed
by a Microtrak.RTM. Model FRA Partical Analyzer device, which
displays a maximum particle size, a minimum particle size and an
average particle size by way of a histogram.
[0098] Suitable fillers to be incorporated into the adhesive
include, but are not limited to, BaTiO.sub.3, SiO.sub.2,
Al.sub.2O.sub.3, ZnO, ZrO.sub.2, TiO.sub.2, precipitated and
sol-gel ceramics, such as silica, titania and alumina,
non-conductive carbon (carbon black) and mixtures thereof.
Especially preferred fillers are SiO.sub.2, ZrO.sub.2, TiO.sub.2
alone or incombination with non-conductive carbon. Most preferred
fillers include filler made by the vapor metal combustion process
taught in U.S. Pat. No. 4,705,762, such as, but not limited to
silicon, titanium and aluminum to produced silica, titania, and
alumina particles that are solid in nature, i.e., not a hollow
sphere, with a uniform surface curvature and a high degree of
sphericity.
[0099] The fillers may be treated by well-known techniques that
render the filler hydrophobic by silylating agents and/or agents
reactive to the adhesive matrix, such as by using coupling agents.
Suitable coupling agents include, silanes, titanates, zirconates,
and aluminates. Suitable silylating agents may include, but are not
limited to, functional silyating agents, silazanes, silanols,
siloxanes. Suitable silazanes, include, but are not limited to,
hexamethyldisilazane (Huls H730) and hexamethylcyclotrisilazane,
silylamides such as, bis(trimethylsilyl)aceta- mide (Huls B2500),
silylureas such as trimethylsilylurea, and silylmidazoles such as
trimethylsilylimidazole.
[0100] Titanate coupling agents are exemplified by the tetra alkyl
type, monoalkoxy type, coordinate type, chelate type, quaternary
salt type, neoalkoxy type, cycloheteroatom type. Preferred
titanates include, tetra alkyl titanates, Tyzor.RTM.) TOT
{tetrakis(2-ethyl-hexyl) titanate, Tyzor.RTM.) TPT {tetraisopropyl
titanate}, chelated titanates, Tyzor.RTM. GBA {titanium
acetylacetylacetonate}, Tyzor.RTM. DC {titanium
ethylacetacetonate}, Tyzor.RTM. CLA {proprietary to DuPont},
Monoalkoxy (Ken-React.RTM. KR TTS), Ken-React.RTM., KR-55 tetra
(2,2 diallyloxymethyl)butyl, di(ditridecyl)phosphito titanate,
LICA.RTM. 38 neopentyl(diallyl)oxy, tri(dioctyl)pyro-phosphato
titanate.
[0101] Suitable zirconates include, any of the zirconates detailed
at page 22 in the Kenrich catalog, in particular KZ 55- tetra (2,2
diallyloxymethyl)butyl, di(ditridecyl)phosphito zirconate, NZ-01-
neopentyl(diallyl)oxy, trineodecanoyl zirconate,
NZ-09-neopentyl(diallyl)- oxy, tri(dodecyl)benzene-sulfonyl
zirconate.
[0102] The aluminates that can be used in the present invention
include, but are not limited to Kenrich.RTM.),
diisobutyl(oleyl)acetoacetylalumina- te (KA 301),
diisopropyl(oleyl)acetoacetyl aluminate (KA 322) and KA 489.
[0103] In addition to the above, certain polymers, such as,
cross-linked vinylic polymers, e.g., divinylbenzene, divinyl
pyridine or a sizing of any of the disclosed thermosetting matrix
adhesives that are first applied at very high dilution (0.1 up to
1.0% solution in MEK) can be used. Also, certain organic peroxides,
such as, dicumylperoxide can be reacted with the fillers.
[0104] The adhesive itself may be a thermoset or thermoplastic and
can include polyglycidyl ether, polycyanurate, polyisocyanate,
bis-triazine resins, poly (bis-maleimide), norbornene-terminated
polyimide, polynorbornene, acetylene-terminated polyimide,
polybutadiene and functionalized copolymers thereof, cyclic
olefinic polycyclobutene, polysiloxanes, poly sisqualoxane,
functionalized polyphenylene ether, polyacrylate, novolak polymers
and copolymers, fluoropolymers and copolymers, melamine polymers
and copolymers, poly(bis phenycyclobutane), and blends or
prepolymers thereof. It should be understood that the
aforementioned adhesives may themselves be blended together or
blended with other polymers or additives, so as to impact flame
retardancy or enhanced toughness.
[0105] As used herein, Mean Flow Pore Size and minimum pore size
were determined using the Coulter.RTM. Porometer II (Coulter
Electronics Ltd., Luton UK) which reports the value directly.
Average particle size and largest particle size were determined
using a Microtrac light scattering particle size analyzer Model No.
FRA (Microtrac Division of Leeds & Northup, North Wales, Pa.,
USA). The average particle size (APS) is defined as the value at
which 50% of the particles are larger. The largest particle size
(LPS) is defined as the largest detectable particle on a Microtrac
histogram. Alternatively, the largest particle size is defined at
the minimum point when the Microtrak FRA determines that 100% of
the particulate have passed.
[0106] In general, the method for preparing the adhesive-filler
delectirc involves:(a) expanding a polytetrafluoroethylene sheet by
stretching a lubricated extruded perform to a microstructure
sufficient to allow small particles and adhesives to free flow into
the void or pore volume; (b) forming a paste from polymeric, e.g.,
thermoset or thermoplastic material and a filler; and (c) imbibing
by dipping, coating, pressure feeding, the adhesive-filler paste
into the highly porous scaffold, such as expanded
polytetrafluoroethylene.
[0107] To prepare the filled adhesive film of this invention,
particulate filler is mixed into a solvent or aqueous solution or
molten adhesive to afford a finely dispersed mixture. The filler in
small particle form is ordinarily less than 40 microns in size, and
preferably has an average particulate size between 1 and 10
microns. The mean pore size of the node-and-fibril structure of the
polytetrafluoroethylene should be large enough to allow for
adequate penetration of the particulate. If the substrate is to be
expanded polytetrafluoroethylene, then structures similar to those
taught in U.S. Pat. No. 4,482,516 to Bowman, et al. are desirable.
Desirably, the mean flow pore size (MFPS) should be between about 2
to 5 times or above that of the largest particulate, with a MFPS of
greater than about 2.4 times that of the filler being particularly
preferred. However, it is also within the scope of the invention
that suitable composites can be prepared by selecting the mean flow
particle size MFPS to average particle size ratio to be greater
than 1.4. Acceptable composites can also be prepared when the
minimum pore size to average particle size is at least above 0.8 or
the minimum pore size to the maximum particle size is at least
above 0.4. The MFPS to particle size ratio ratios being performed
with a microtrak FRA analyzer.
[0108] Alternatively, another mechanism for gauging relative pore
and particle sizes may be calculated as the smallest pore size
being not less than about 1.4 times the largest particle size.
[0109] Table 1 shows the effect of the relationship of the
substrate mean flow pore size (MFPS) and particulate size. When the
ratio of the mean flow pore size (MFPS) to largest particulate is
1.4 or less, poor results are observed. In this case, a homogeneous
composite is not observed, and most of the particulate filler does
not uniformly penetrate the microporous substrate. When the ratio
of the MFPS to largest particulate is greater than about 2.0, then
a uniform composite is obtained. It is also observed that the
larger the ratio of MFPS to largest particulate, the greater the
relative case it is to imbibe a homogeneous dispersion into the
microporous substrate.
1TABLE 1 Substrate Particle Pore Size Size MFPS Pore.sub.Min
Pore.sub.Min Sam- Min MFPS Avg Max .div. .div. .div. Re- ple
(.mu.m) (.mu.m) (.mu.m) (.mu.m) Part.sub.Avg Part.sub.Max
Part.sub.Avg sult A 4 7 5 10 1.4 0.4 0.8 Poor B 4 5 5 10 1.0 0.4
0.8 Poor C -- 58 5 10 12.4 N/A -- Good D 18 32 6 10 5.3 1.8 3.0
Good E 18 32 1 1 32.0 18.0 18 Good F 17 24 6 10 4.0 1.7 2.8 Good G
0.2 0.4 0.5 1.6 0.8 0.125 0.4 Poor H -- 60 18 30 3.3 -- -- Good I
14 11 0.5 1.6 22.0 8.8 28 Good J 14 29 4 8 7.3 1.8 3.5 3.5 Good K
14 29 5 10 5.8 1.4 2.8 Good
EXAMPLE 1
[0110] A fine dispersion was prepared by mixing 281.6 g TiO.sub.2
(TI Pure R-900, Du Pont Company) into a 20% (w/w) solution of a
flame retarded dicyanamide/2-methylimidazole catalyzed bisphenol-A
based polyglycidyl ether (Nelco N-4002-5, Nelco Corp.) in MEK. The
dispersion was constantly agitated so as to insure uniformity. A
swatch of expanded PTFE was then dipped into the resin mixture. The
web was dried at 165.degree. C. for 1 min. under tension to afford
a flexible composite. The partially-cured adhesive composite thus
produced comprised of 57 weight percent TiO.sub.2, 13 weight
percent PTFE and 30 weight percent epoxy adhesive. Several plies of
the adhesive sheet were laid up between copper foil and pressed at
600 psi in a vacuum-assisted hydraulic press at temperature of
225.degree. C. for 90 min. then cooled under pressure. This
resulted in a copper laminate having dielectric constant of 19.0,
and withstood a 30 sec. solder shock at 280.degree. C. at an
average ply thickness of 100 mm (0.0039" (3.9 mil)) dielectric
laminate thickness.
EXAMPLE 2
[0111] A fine dispersion was prepared by mixing 386 g SiO.sub.2
(HW-11-89, Harbison Walker Corp.) which was pretreated with
phenyltrimethoxysilane (04330, Huls/Petrarch) into a manganese
catalyzed solution of 200 g bismaleimide triazine resin (BT206OBJ,
Mitsubishi Gas Chemical) and 388 g MEK. The dispersion was
constantly agitated so as to insure uniformity. A swatch of 0.0002"
thick expanded PTFE was then dipped into the resin mixture,
removed, and then dried at 165.degree. C. for 1 min. under tension
to afford a flexible composite. Several plies of this prepreg were
laid up between copper foil and pressed at 250 psi in a
vacuum-assisted hydraulic press at temperature of 225.degree. C.
for 90 min. then cooled under pressure. This resulting dielectric
thus produced comprised of 53 weight percent SiO.sub.2, 5 weight
percent PTFE and 42 weight percent adhesive, displayed good
adhesion to copper, dielectric constant (at 10 GHz) of 3.3 and
dissipation factor (at 10 GHz) of 0.005.
EXAMPLE 3
[0112] A fine dispersion was prepared by mixing 483 g SiO.sub.2
(HW-11-89) into a manganese-catalyzed solution of 274.7 g
bismaleimide triazine resin (BT206OBJ, Mitsubishi Gas Chemical) and
485 g MEK. The dispersion was constantly agitated so as to insure
uniformity. A swatch of 0.0002" thick expanded PTFE was then dipped
into the resin mixture, removed, and then dried at 165.degree. C.
for 1 min. under tension to afford a flexible composite. Several
plies of this prepreg were laid up between copper foil and pressed
at 250 psi in a vacuum-assisted hydraulic press at temperature of
225.degree. C. for 90 minutes then cooled under pressure. The
resulting dielectric thus produced comprised of 57 weight percent
SiO.sub.2, 4 weight percent PTFE and 39 weight percent adhesive,
displayed good adhesion to copper, dielectric constant (at 10 GHz)
of 3.2 and dissipation factor (at 10 GHz) of 0.005.
EXAMPLE 4
[0113] A fine dispersion was prepared by mixing 15.44 kg TiO.sub.2
powder (TI Pure R-900, DuPont Company) into a manganese-catalyzed
solution of 3.30 kg bismaleimide triazine resin (BT206OBH,
Mitsubishi Gas Chemical) and 15.38 kg MEK. The dispersion was
constantly agitated so as to insure uniformity. A swatch of 0.0004"
TiO.sub.2-filled expanded PTFE (filled according to the teachings
of Mortimer U.S. Pat. No. 4,985,296, except to 40% loading of
TiO.sub.2 and the membrane was not compressed at the end) was then
dipped into the resin mixture, removed, and then dried at
165.degree. C. for 1 min. under tension to afford a flexible
composite. The partially cured adhesive composite thus produced
comprised of 70 weight percent TiO.sub.2, 9 weight percent PTFE and
21 weight percent adhesive. Several plies of this prepreg were laid
up between copper foil and pressed at 500 psi in a vacuum-assisted
hydraulic press at temperature of 220.degree. C. for 90 minutes
then cooled under pressure. This resulting dielectric displayed
good adhesion to copper, dielectric constant of 10.0 and
dissipation factor of 0.008.
EXAMPLE 5
[0114] A fine dispersion was prepared by mixing 7.35 kg SiO.sub.2
(ADMATECHS SO-E2, Tatsumori LTD) with 7.35 kg MEK and 73.5 g of
coupling agent, i.e., 3-glycidyloxypropyltri-methoxysilane
(Dynasylan GLYMO (Petrach Systems). SO-E2 is described by the
manufacture as having highly spherical silica having a particle
diameter of 0.4 to 0.6 mm, a specific surface area of 4-8
m.sup.2/g, a bulk density of 0.2-0.4 g/cc (loose).
[0115] To this dispersion was added 932 g of a 50% (w/w) solution
of a cyanated phenolic resin, Primaset PT-30 (Lonza Corp.). In
(MEK) methylethylketone, 896 g of a 50% (w/w) solution of RSL 1462
(Shell Resins, Inc.(CAS #25068-38-6)) in MEK, 380 g of a 50% (w/w)
solution of BC-58 (Great Lakes, Inc.) in MEK, 54 g of 50% solution
of bisphenol A (Aldrich Company) in MEK, 12.6 g Irganox 1010 (Ciba
Geigy), 3.1 g of a 0.6% solution of Manganese 2-ethylhexanoate (Mn
HEX-CEM (OMG Ltd.), and 2.40 kg MEK. This dispersion was subjected
to ultrasonic agitation through a Misonics continuous flow cell for
about 20 minutes at a rate of about 1-3 gal./minute. The fine
dispersion thus obtained was further diluted to an overall bath
concentration of 11.9% solids (w/w).
[0116] The fine dispersion was poured into an impregnation bath. A
expanded polytetrafluoroethylene web having the node fibril
structure of FIG. 5, and the following properties:
2 Frazier 20.55 Coverage 9 g/m.sup.2 Ball Burst 3.2 lbs. Thickness
6.5 mil. Mean Flow Pore Size 9.0 microns
[0117] The Frazier number relates to the air permeability of the
material being assayed. Air permeability is measured by clamping
the web in a gasketed fixture which is provided in circular area of
approximately 6 square inches for air flow measurement. The
upstream side was connected to a flow meter in line with a source
of dry compressed air. The downstream side of the sample fixture
was open to the atmosphere. Testing is accomplished by applying a
pressure of 0.5 inches of water to the upstream side of the sample
and recording the flow rate of the air passing through the in-line
flowmeter (a ball-float rotameter that was connected to a flow
meter.
[0118] The Ball Burst Strength is a test that measures the relative
strength of samples by determining the maximum at break. The web is
challenged with a 1 inch diameter ball while being clamped between
two plates. The Chatillon, Force Gauge Ball/Burst Test was used.
The media is plaaced taut in the measuring device and pressure
afixed by raising the web into contact with the ball of the burst
probe. Pressure at break is recorded.
[0119] The web described above was passed through a constantly
agitated impregnation bath at a speed at or about 3 ft./min, so as
to insure uniformity. The impregnated web is immediately passed
through a heated oven to remove all or nearly all the solvent, and
is collected on a roll.
[0120] Several plies of this prepeg were laid up between copper
foil and pressed at 200 psi in a vacuum-assisted hydraulic press at
temperature of 220.degree. C. for 90 minutes and then cooled under
pressure. This resulting dielectric displayed good adhesion to
copper, dielectric constant (10 GHz) of 3.0 and dissipation factor
of 0.0085 (10 GHz).
[0121] The physical properties of the particulate filler used in
Example 4 and Example 7 are compared below.
3 Tatsumori Harbison Property (ADMATECHS) Walker Manufacture
Technique Vapor Metal Amorphous Combustion Fused Silica Designation
Silica SO-E2 HW-11-89 Median Particle Size 0.5 micron 5 micron
Shape Spherical Irregular, jagged Surface Area 6-10 m.sup.2/g 10
m.sup.2/g Bulk Density 0.47 g/cc 1.12 g/cc Specific Density 2.26
g/cc 2.16 g/cc
EXAMPLE 6
[0122] An ePTFE matrix containing an impregnated adhesive filler
mixture, based on SiO.sub.2 prepared from the vapor combustion of
molten silicon is prepared as follows. Two precursor mixtures were
initially prepared. One being in the form of a slurry containing a
silane treated silica similar to that of Example 5 and the other an
uncatalyzed blend of the resin and other components.
[0123] Mixture I
[0124] The silica slurry is a 50/50 blend of the SO-E2 silica of
Example 5 in MEK, where the silica contains a coated of silane
which is equal to 1% of the silica weight. To a five gallon
container, 17.5 pounds of MEK and 79 grams of silane were added and
the two components mixed to ensure uniform dispersion of the silane
in the MEK. Then, 17.5 pounds of the silica of Example 5 were
added. Two five gallon containers of the MEK-silica-silane mixture
were added to a reaction vessel, and the contents, i.e., the
slurry, was recirculated through an ultrasonic disperser for
approximately one hour to break up any silica agglomerates that may
be present. The sonication was completed and the contents of the
reaction vessel were heated to approximately 80.degree. C. for
approximately one hour, while the contents were continuously mixed.
The reacted mixture was then transferred into a ten gallon
container.
[0125] Mixture II
[0126] The desired resin blend product is an MEK based mixture
containing an uncatalyzed resin blend (the adhesive) contains
approximately 60% solids, where the solid portion is an exact
mixture of 41.2% PT-30 cyanated phenolic resin, 39.5% RSL 1462
epoxy resin, 16.7% BC58 flame retardant, 1.5% Irganox 1010
stabilizer, and 1% bisphenol A co-catalyst, all percentages by
weight.
[0127] Into a ten gallon container, 14.8 pounds of PT-30 and 15-20
pounds of MEK were added and stirred vigorously to completely
solvate the PT-30. Then 6 pounds of BC58 were measured and added to
the MEK/PT-30 solution and vigorously agitated to solvate the BC58.
The stabilizer, 244.5 grams of Irganox 1010 and bisphenol A, 163
grams were added. The ten gallon container was reweighed and 14.22
pounds of RSL 1462 were added. Additional MEK was added to bring
the mixture weight to 60 pounds. The contents were then vigorously
agitated for approximately 1 to 2 hours, or as long is necessary to
completely dissolve the solid components.
[0128] The desired product is a mixture of the silica treated with
a silane, the uncatalyzed resin blend, and MEK in which 68% by
weight of the solids are silica, and the total solids are between
5% and 50% by weight of the mixture. The exact solids concentration
varies from run to run, and depends in part on the membrane to be
impregnated. The catalyst level is 10 ppm relative to the sum of
the PT-30 and RSL1462.
[0129] The solid contents of mixtures I and II were determined to
verify the accuracy of the precursors and compensate for any
solvent flash that had occurred. Then mixture I was added to a ten
gallon container to provide 12 pounds of solids, e.g., 515 solids
content, 23.48 pounds of mixture I. Then mixture II was added to
the container to provide 5.64 pounds of solids, e.g., 59.6% solids,
9.46 pounds of mixture II. the manganese catalyst solution (0.6% in
mineral spirits), 3.45 grams, was added to the mixture of mixture I
and mixture II and blended thoroughly to form a high solids content
mixture.
[0130] The bath mixture for impregnating an ePTFE matrix, 28%
solids mixture, was prepared by adding sufficient MEK to the high
solids content mixture to a total weight of 63 pounds.
[0131] Thereafter, an ePTFE matrix weas impregnated with this bath
mixture to form a dielectric material.
EXAMPLE 7
[0132] A fine dispersion was prepared by mixing 26.8 grams Furnace
Black (Special Schwarz 100, Degussa Corp., Ridgefield Park, N.J.)
and 79 grams of coupling agent (Dynaslan GLYMO CAS #2530-83-8;
3-glycidyloxypropyl-tri- methoxysilane (Petrach Systems). The
dispersion was subjected to ultrasonic agitation for 1 minute, then
added to a stirring dispersion of 17.5 pounds SiO.sub.2 (SO-E2) in
17.5 pounds MEK which had previously been ultrasonically agitated.
The final dispersion was heated with constant overhead mixing for 1
hour at reflux, then allowed to cool to room temperature.
[0133] Separately, an adhesive varnish was prepared by adding the
following: 3413 grams of a 57.5% (w/w) mixture of Primaset PT-30 in
MEK, 2456 grams of a 76.8% (w/w/) mixture of RSL 1462 in MEK, 1495
grams of a 53.2% (w/w) solution of BC58 (Great Lakes, Inc.) in MEK,
200 grams of 23.9% (w/w) solution of bisphenol A (Aldrich Company)
in MEK, 71.5 grams Irganox 1010, 3.21 grams of a 0.6% (w/w)
solution of Mu HEX-CEM (OMG Ltd.) in mineral spirits, and 2.40 kg
MEK.
[0134] In a separate container, 3739 grams of the dispersion
described above was added, along with 0.0233 grams of Furnace Black
(Special Schwarz 100, Degussa Corp., Ridgefield Park, N.J.), 1328
of the adhesive varnish described above and 38.3 pounds MEK. This
mixture was poured into an impregnation bath, and an ePTFE web was
passed through the impregnation bath at a speed at or about 3
ft/min. This dispersion was constantly agitated so as to insure
uniformity. The impregnated web is immediately passed through a
heated oven to remove all or nearly all the solvent, and is
collected on a roll.
[0135] Several piles of this prepeg were laid up between copper
foil and pressed at 200 psi in a vacuum-assisted hydraulic press at
temperatures of 200.degree. C. for 90 minutes then cooled under
pressure. This resulting dielectric displayed good adhesion to
copper.
EXAMPLE 8
[0136] An adhesive varnish was prepared by adding the following:
3413 grams of a 57.5% (w/w) solution of Primaset PT-30 (PMN
P-88-1591)) in MEK, 2456 grams of a 76.8% (w/w) solution of RSL
1462 in MEK, 1495 grams of a 53.2% (w/w) solution of BC58 (Great
Lakes, Inc.) in MEK, 200 grams of 23.9% (w/w) solution of bisphenol
A (Aldrich Company) in MEK, 71.5 grams Irganox 1010, 3.21 grams of
a 0.6% (w/w) solution of Mn HEX-CEM in mineral spirits, and 2.40 kg
MEK.
[0137] In a separate container, 1328 grams of the adhesive varnish
described above, 42.3 pounds MEK, 6.40 grams of Furnace Black
(Special Schwarz 100, Degussa Corp., Ridgefield, N.J.) and 1860.9
grams SiO.sub.2 (SO-E2). This mixture was poured into an
impregnation bath, and an ePTFE web was passed through the
impregnation bath at a speed at or about 3 ft/min. The dispersion
was constantly agitated so as to insure uniformity. The impregnated
web is immediately passed through a heated oven to remove all or
nearly all the solvent, and is collected on a roll.
[0138] Several piles of this prepeg were laid up between copper
foil and pressed at 200 psi in a vacuum-assisted hydraulic press at
temperature of 220.degree. C. for 90 minutes then cooled under
pressure. This resulting dielectric displayed good adhesion to
copper.
[0139] The low CTE base of FIG. 9 was prepared using the dielectric
material of Example 6. A copper core was laminated on each side
thereof with a layer of the filled ePTFE of FIG. 9. Thereafter,
INVAR 36 is placed on each exposed side of the dielectric material.
The composite is heated under pressure to form the base unit
31.
[0140] As discussed above with reference to FIGS. 1 and 2, a Z-axis
material is used for components 2 and 9. The selectively conductive
Z-axis substrate member is reusable and compliant. As taught in
U.S. Pat. No. 5,498,467 to Meola, the basic substrate is a planar,
open cell, porous material lying in a plane defined by an x and a
y-axis, and having Z-axis pathways extending from one side of the
material to the other side. When the Z-axis material includes an
optional elastomer, it is positioned between the lower surface 12
of the base unit 7 and the upper surface of the laminated wafer
level contact sheet 9. The selectively conductive member 8, having
the optional elastomer, has a series of electrically isolated,
irregularly shaped electrically conductive pathways extending from
a lower surface of the selectively conductive member to an upper
surface generally in the direction of the Z-axis. When in place
between the base unit 7 and the laminated wafer level contact sheet
9, the electrically conductive pathways electrically couple the
first terminals 13 of the base unit 7 to the contact pads 20 on the
upper surface of the laminated wafer level contact sheet 9.
[0141] When the Z-axis material is used to form the laminated wafer
level contact sheet 9, to be described hereinafter, it contains an
bonding adhesive which is in the partially cured, B-stage. However,
because it is in contact with the Z-axis material 8, is may be
readily detached therefrom and be reused to attach another wafer
level contact sheet 9.
[0142] Suitable materials for the Z-axis member, which can be used
for both the material 8 and laminated wafer level contact sheet 9,
have a thickness on the order of 5.times.10.sup.-6 m and
5.times.10.sup.-4 m (5 .mu.m and 500 .mu.m), e.g., 50 .mu.m,
75.mu., 100 .mu.m, 150 .mu.m etc., and include woven or non-woven
fabric, such as a nylon, glass fiber or polyester fabric or cotton,
or the like. The member can also be a porous polymeric material or
membrane, that is flexible, such as porous polyolefins, e.g.,
porous polyethylene, porous polypropylene, porous fluoropolymers,
or open cell, porous polyurethanes. Additionally, open cell, porous
inorganic materials, such as thin porous ceramic plates that have
continuous pores from one side to the other can be used.
[0143] Porous fluoropolymers include, but are not limited to,
porous polytetrafluoroethylene (PTFE), porous expanded
polytetrafluoroethylene (ePTFE), porous copolymers of
polytetrafluoroethylene and polyesters or polystyrenes, copolymers
of tetrafluoroethylene and fluorinated ethylene propylene (FEP) or
perfluoroalkoxy -tetrafluoroethylene (PFA) with a C.sub.1-C.sub.4
alkoxy group. Porous materials include expanded polypropylene,
porous polyethylene and porous polytetrafluoroethylene.
[0144] The material used as the substrate for the Z-axis material
is expanded polytetrafluoroethylene having a microstructure of
nodes interconnected with fibrils, a void volume of about 20% to
90%, such as the material prepared in accordance with the teachings
of U.S. Pat. No. 3,953,566, incorporated herein by reference,
exemplified by the ePTFE of FIG. 11.
[0145] A planar porous material that is used as the Z-axis
substrate has a thickness of between about 5 and 125 .mu.m, but
thickness is not a critical factor so long as the ultra-violet
strength used to form the conductive pathways will penetrate the
sample.
[0146] With reference to FIGS. 10-13, when the material for forming
the Z-axis member is microporous PTFE (expanded
polytetrafluoroethylene), the pores 49 are defined as the space
between nodes 50 interconnected with fibrils 51, as shown in FIG.
10. In this case, the internal structure of nodes 50 interconnected
with fibrils 51 is of a material density that results in an
irregular continuous path 52 through the Z axis within a vertically
defined cross section of the Z axis from one side of the planar
member to the other (see FIG. 13).
[0147] The selectively conductive member 53 (FIG. 13) is prepared
by making areas 32 (FIG. 12) through the Z-axis direction receptive
to deposition of a metal salt, which metal salt on exposure to
radiant energy is converted to nonconductive metal nuclei which
then act to catalyze deposition of a conductive metal from an
electroless metal deposition solution. The pores 49 of a porous
member, defined above, are first wetted with a wetting agent, such
as an alcohol, or organic aqueous surfactant. Methanol, propanol,
tetrafluoroethylene/vinyl alcohol copolymers or the like may be
used. The wetting agent acts to make the material of the member
receptive to conductive metals such as nickel or copper.
[0148] A radiation sensitive metal salt composition is a liquid
radiation sensitive composition comprising a solution of a light
sensitive reducing agent, a metal salt, a source of halide ions,
and a second reducing agent. Preferably, the radiation sensitive
solution contains water, the metal salt, a light sensitive reducing
agent, a second reducing agent, and optionally (for hard to wet
surfaces) a surfactant. The metal salt includes but is not limited
to, copper acetate, copper formate, copper bromide, copper sulfate,
copper chloride, nickel chloride, nickel sulfate, nickel bromide,
ferrous bearing compounds, such as, ferrous sulfate, ferrous
chloride, and noble metals such as palladium, platinum, silver,
gold and rhodium.
[0149] Suitable light-sensitive reducing agents are aromatic diazo
compounds, iron salts, e.g., ferrous or ferric oxalate, ferric
ammonium sulfate, dichromates e.g., ammonium dichromate,
anthraquinone disulfonic acids or salts thereof, glycine
(especially active under humid surface conditions), L-ascorbic
acid, azide compounds, and the like, as well as metal accelerators,
e.g., tin compounds, e.g., stannous chloride or compounds of
silver, palladium, gold, mercury, cobalt, nickel, zinc, iron, etc.,
the latter group optionally being added in amounts of 1 mg to 2
grams per liter.
[0150] The second reducing agents, include, but are not limited to,
polyhydroxy alcohols, such as glycerol, ethylene glycol,
pentaerythritol, mesoerythritol, 1,3-propanediol, sorbitol,
mannitol, propylene glycol, 1,2-butanediol, pinacol, sucrose,
dextrin, and compounds such as triethanolamine, propylene oxide,
polyethylene glycols, lactose, starch, ethylene oxide and gelatin.
Compounds which are also useful as secondary reducing agents are
aldehydes, such as formaldehyde, benzaldehyde, acetaldehyde,
n-butyraldehyde, polyamides, such as nylon, albumin and gelatin;
leuco bases of triphenyl methane dyes, such as
4-dimethylaminotriphenylmethane,
4',4',4"-tri-di-methylaminotriphenylmeth- ane; leuco bases of
xanthene dyes, such as 3,6-bis dimethylamino xanthene and 3,6-bis
dimethylamino-9-(2-carboxyethyl) xanthene; polyethers, such as
ethylene glycol diethyl ether, diethylene glycol, diethyl ether
tetraethylene glycol dimethyl ether, and the like.
[0151] A second reducing agent that is also a humectant,
exemplified by sorbitol, as a constituent of the treating solution,
for the humectant, apparently by reason of a moisture conditioning
effect on the "dry" coating prior to developing. It provides
substantial aid in maintaining density of the metal coating on the
internal material of the member during a developing step in which
any unconverted radiation-sensitive composition in the coating is
washed off of the base.
[0152] Among the suitable surfactants are polyethenoxy nonionic
ethers, such as Triton X-100, manufactured by Rohm & Haas Co.,
and nonionic surfactants based on the reaction between nonyl phenol
and glycidol, such as Surfactants 6G and 10G manufactured by Olin
Mathieson Company.
[0153] This treating solution, i.e., the radiation sensitive
composition, contains an acidifying agent in the form of an acid
salt for adjusting the pH of the aqueous solution to usually
between about 2.0 and 4.0 (preferably 2.5 to 3.8) and a small
quantity of halide ions (iodide, bromide or chloride ions), so that
a combination of additives provides a surprising effect in
substantially intensifying the density of the coating that is
formed subsequently by exposure of the treated planar material to
radiant energy. Adjusting the acidity does not always require
introducing an agent for that purpose alone, because the adjustment
may be accomplished wholly or partially by means of an acidic
substance that has other functions also, as exemplified by a
light-sensitive reducing agent of an acidic nature (e.g., ascorbic
acid, glycerin, etc.) or by some additives for introducing halide
ions (e.g., hydrochloric acid). Similarly, some or all of the
halide ions may be introduced as components of the reducible metal
salt (e.g., cupric chloride).
[0154] Among the many suitable acidic substances which may be
employed in controlling or adjusting the pH of the sensitizing
solution are fluoroboric acid, citric acid, lactic acid, phosphoric
acid, sulfuric acid, acetic acid, formic acid, boric acid,
hydrochloric acid, nitric acid and the like. A wide variety of
bromide, chloride and iodide salt and other halide-generating water
soluble compounds may be utilized to provide part or all of the
desired halide ion content of the treating solution. These may
include, inter alia, salts of metals in general and these halogens
as exemplified by cupric bromide, nickel chloride, cobalt chloride,
cupric chloride, sodium iodide, potassium iodide, lithium chloride,
magnesium iodide, magnesium bromide, sodium bromide, potassium
bromide, and the like. Bromide salts are suitable, as they produce
a higher degree of sensitivity (i.e., darker and denser deposits)
on the substrate than the corresponding chloride in at least
certain instances.
[0155] The halide ions constitute only a minor proportion of the
solute and may typically range from about 0.045 to 1.6%, preferably
about 0.13 to 0.45%, based on the total weight of dissolved solids.
The amount of halogen may be stated otherwise as between about 0.9
and 25 milli-equivalents of halogen per liter of the sensitizing
solution, preferably about 2.5 to 9 milliequivalents, e.g., 0.3-1.0
gm/l for cupric bromide. Increasing the proportions of the halide
ions is usually undesirable as such increases appear to gradually
diminish the sensitizing effect of the treatment below what is
obtainable with the optimum amount. Also, the proportion of these
halide ions expressed as equivalents is less than that of the
cupric or other reducible non-noble metal cations in the treating
solution. For instance, the ratio of equivalents of such metal ions
to halide ions is usually in the range of at least 2:1 and
preferably about 4:1 to 100:1.
[0156] The radiation sensitive composition is applied to the
material to thoroughly wet the material defining the pores whereby
the porous member is subjected to the radiation sensitive
composition for a time sufficient for the composition to permeate
or penetrate through the pores of the material and form a coating
on the pore interior along the material defining the pores from one
side of the porous planar material to the other. Thereafter the
coating porous member is dried by air drying or oven baking at
below 50.degree. C. At this stage, to preserve the light-sensitive
nature of the treating compositions, the material should be
processed under yellow light conditions. The member should also be
kept at a temperature less than 70 F and at no greater than 60%
relative humidity because of possible absorption of water by the
material of the member which can adversely affect the process.
[0157] The surface of one side of the coated porous member is
masked with an opaque cover 55 (FIG. 11) in selected areas so that
subsequent radiation will not strike the covered area. The masking
can result in dot shaped conductive areas of any desired, shape,
size, array or alternating bands or strips of conductive areas
through the Z axis direction, separated by alternating bands of
nonconductive areas (electrically isolating), for use as an
electrical connector. The dots are conventionally circulator, but
could have other geometrical configurations, as squares,
rectangles, etc. The size of the dot can be as small as a 0.0001
inches and as large as 0.025 inches, preferably 0.001 inches, 0.002
inches, 0.003 inches, 0.004 inches, 0.005 inches, 0.008 inches,
0.009 inches or fraction thereof where the pitch, defined as the
distance between the centers of adjacent dots is preferably at
least twice the dimension of the dots, e.g., 1 mil dot, 2 mil
pitch.
[0158] The masked member of FIG. 11 is exposed to radiation, such
as light, electron beams, x-ray, and the like, preferably
ultraviolet radiation, for a time and at a power sufficient to
reduce the metallic cations in the metal salt to metal nuclei
throughout the thickness of the member. The member is then unmasked
and washed with an acidic or alkaline washing solution to wash off
the radiation sensitive composition that had been protected by the
opaque cover. The acidic or alkaline washing (or fixing) solution
does not affect the areas where the radiation had reduced the metal
cations to metal nuclei, if the solution is not left in contact
with the areas for more than a few minutes, e.g., 5 minutes or
less.
[0159] Specifically, the treated member is selectively masked with
a metallic mask, diazo or silver halide film, as shown in FIG. 11.
The masked member is then photo imaged with either a non-collimated
or collimated ultra-violet light source of less than 500 manometers
wavelength. The catalyst, the nonconductive metal nuclei, itself
requires a minimum of 200 millijoules radiant energy to establish a
stable photo image.
[0160] The UV light energy is strong enough to penetrate through
the thickness of the porous member. Thus, in subsequent plating
operations, the conductive metal plates continuously through the
Z-axis and provides electrical continuity in the Z-axis. If
desired, the UV light energy can be applied to both sides of the
planar member.
[0161] After a 5 minute normalization period, the catalyzed
material is then washed for a short period of 30-90 seconds in a
sulfuric acid solution, e.g. a solution consisting of 8% sulfuric
acid by weight and 92% deionized water by weight or an alkaline
solution consisting of 40 g/l of ethylene diamine tetraacetic acid,
100 ml/l of formaldehyde, adjusted at a pH of greater than 10 with
sodium hydroxide. The purpose of this washing step is to eliminate
the unexposed catalyst from the material while retaining the
photo-reduced image.
[0162] The washed material containing the selective image is next
stabilized with a reactive metal cation replacement solution. A
convenient solution is:
4 REACTIVE METAL CATION SOLUTION 0.25 gram/liter of palladium
chloride 8% sulfuric acid by weight 92% D.I. water by weight
[0163] The image undergoes a replacement reaction of the copper
with more stable cation, e.g., palladium. A more stable system is
desired because of the tendency of the copper to oxidize at such
thin layer amounts and because of the ability of the palladium to
more rapidly initiate the reduction reaction in the electroless
bath. The member is kept in this solution at least 30 seconds, and
is subsequently washed in D.I. water for about 1 minute.
[0164] The catalyzed member is selectively electrolessly plated
with one or more conductive metals to a deposition thickness of
about 50-60 micro inches. Such metals include copper, nickel, gold,
silver, platinum, cobalt, palladium, rhodium, aluminum and
chromium. During the time in the electroless baths, the member is
agitated with a rocking motion to promote diffusion of the metal to
the innermost region of the substrate. Plating is carried out by
first rinsing in deionized water, then dipping in an agitated
electroless copper bath for a time sufficient to deposit copper in
the material over the palladium and through the substrate
thickness. Thus, within selected areas through the material in the
Z axis direction, the material nodes 50 and fibrils 51 are at least
partially covered with a conductive metal layer 56, having a Z-axis
portion 57 and upper and lower contact pads 58 and 59. See FIG. 13.
This the conductive metal 56 forms a continuous path of
conductivity 24 through the selected areas between upper and lower
pads 58 and 59.
[0165] If the Z-axis material is to be used as member 8, then it
may be imbibed with an elastomer 60 which fills the previous
designated pores 49. The elastomer can include any material that
has elastomeric properties, such as, but not limited to siloxanes
(silicon) based elastomers, acrylics, butyl rubbers,
chlorosulfonated polyethylene, ethylene-propylene rubber,
fluorinated elastomers, and thermoplastic rubbers including
polystyrenes, polyethylenes, neoprenes, and polybutadiane.
Preferably the elastomer is Dow Corning.RTM. 3-1753 which is, as
supplied, a translucent liquid having a use range of -55.degree. C.
to 200.degree. C., and at 25.degree. C. has a specific gravity of
0.98 and a viscosity of 385 cps at 25.degree. C. The conformal
coating of Dow Corning.RTM. 3-1753 cures to a silicone elastomer
that will not melt or appreciably soften. Other elastomers are Dow
Corning.RTM. 3-1765, which as supplied, is translucent and at
25.degree. C. has a specific gravity of 0.98 and a viscosity of 230
cps, and Dow Corning.RTM. 1-1405 which is translucent, and at
25.degree. C. has a specific gravity of 0.98 and a viscosity of 450
cps.
[0166] An imbibing solution is prepared from non-adhesive silicone
elastomers, such as, Dow Corning.RTM. 3-1753, 1-1405 and PSA 595
silicone from General Electric, in an appropriate solvent, such as
octamethyltrisiloxane (05-20), methyl dimethylformamate (DMF),
tetrahydrofuran (THF), mineral spirits, lower alcohols such as
C.sub.1-C.sub.6 alcohols, preferably isopropanol, and ketones
solvent from Dow Corning, where the elastomer comprises 10% to 70%
by weight of the solution. The elastomer is thoroughly mixed and
dissolved in the solvent to form an elastomer solution, by stirring
or similar mixing techniques. The elastomer solution is placed in a
tank or other suitable vessel and the selectively conductive Z-axis
material is then immersed in the elastomer solution to imbibe or
impregnate the solution into the pores of the material. Immersion
can be by dipping. Although dipping is one impregnating technique,
any other process capable of impregnating the Z-axis material with
the elastomer solution, such as a pressurized spraying, may also be
used.
[0167] The Z-axis material containing the elastomer solution is
placed in a drying rack to air dry for 2 to 15 minutes, preferably
5 to 10 minutes, most preferably 5 minutes. The drying time is
controlled by the pore size, material thickness and quantity of
solvent. Longer or shorter periods of air drying may be necessary
if thicker Z-axis materials are to be air dried or higher solvent
quantities are present. Thereafter, the rack containing the air
dried Z-axis impregnated material is placed in a heated oven,
maintained at a temperature of between about 95.degree. C. and
145.degree. C., preferably about 120.degree. C., for a period of
time between 10 and 70 minutes, preferably 30 minutes to remove the
solvent. The drying and heating is carried out until the residual
solvent content is reduced to less than about 1.0% by weight,
preferably 0.2% by weight.
[0168] If on the otherhand the Z-axis material is to be used for
the laminated wafer level contact sheet 9, then the Z-axis material
is imbibed with a bonding adhesive. The passageways of the Z-axis
material can be filled with an adhesive if the material is to be
used as a connector interface between two other conductive
materials. Suitable adhesives include epoxy resin, acrylic resin,
urethane resin, silicone resin, polyimide resin, cyanate ester
resin, or the like. The adhesive is conveniently imbibed into the
pores by immersing the member in a solution of the adhesive. For an
epoxy resin, a suitable solvent is methylethylketone. Once the
adhesive is imbibed or impregnated into the Z-axis material in
order to provide bonding capability it is baked at 160.degree. C.,
which parially cures the adhesive.
[0169] Z-axis Materials Examples
[0170] In the following examples, the catalytic treating solution
used was prepared by adding to one liter of D.I. water:
5 COMPONENT AMOUNT (gms) 2,6 di-sodium anthraquinone di-sulfonic
salt 30 2,7 di-sodium anthraquinone di-sulfonic salt 30 sorbitol
220 220 cupric acetate 15 15 cupric bromide 0.5 0.5 olin G-10
surfactant 2 2 fluoroboric acid pH 3.5-3.8
[0171] The fixing solution used was 8% sulfuric acid by weight, 92%
distilled water by weight. A stabilizing solution is also used, and
contains the following components.
6 STABILIZING SOLUTION 0.25 g/l of palladium chloride 8% sulfuric
acid by weight 92% D.I. water by weight
EXAMPLE 9
[0172] As taught in the '467 patent, a stretched porous
polytetrafluoroethylene membrane obtained from W. L. Gore &
Associates was treated with a wetting agent by immersing it in a
solution of 75% methanol, 25% ethanol and of 1 weight % copolymer
of tetrafluoroethylene and vinyl alcohol at room temperature for
about 30 seconds.
[0173] The wetted membrane was then dipped into the catalytic
treating solution for 60 seconds and was then dried in an oven at
50.degree. C. for 3 minutes. One surface of the membrane was then
masked with dots of a diazo film of 6 mil diameters and 6 mil pitch
(center to center).
[0174] The membrane was then exposed to a collimated UV light
source at 1600 millijoule for about 2 minutes. After a 5 minute
normalization period, the UV treated membrane was then washed for
30 seconds in the fixing solution to eliminate unexposed catalytic
treating solution. The selectively imaged membrane was then
stabilized by dipping into the stabilizing solution for one minute
and then washing in distilled water for one minute.
[0175] The stabilized membrane was then dipped into a copper
plating bath composition (Shipleys 3) on a per liter of D.I. water
basis,
7 PLATING SOLUTION 30 grams of ethylenediamine tetra acetic acid 6
to 8 grams sodium hydroxide 5 to 7 grams copper II sulfate 2 to 3
grams formaldehyde 2 grams of a given surfactant
[0176] The membrane was agitated in the bath using an agitation bar
for 71/2 minutes to promote diffusion of copper throughout the
pores of the membrane in the catalyzed portion throughout in the
Z-axis.
EXAMPLE 10
[0177] As taught in the '467 patent, a 6 mil (150 micrometer)
thick, stretched, porous polytetrafluoroethylene membrane was
wetted by subjecting it to 2 propanol by dipping for 1 minute. It
was then dipped into the catalytic treating solution for one
minute, dried, masked and subjected to UV light, and then subjected
to the fixing and to the stabilizing solution as in Example 9. The
Z-axis material was plated with copper as in Example 9 and coated
with copper, as in Example 9.
EXAMPLE 11
[0178] A 2 mil thick stretched porous polytetrafluoroethylene
membrane was prepared as in Example 9, except that the masking
strips were 3 mil pad with a 10 mil pitch.
EXAMPLES 12-14
[0179] The procedure of Example 9 was followed for membranes formed
from porous polyethylene, porous polypropylene and open cell,
porous polyurethanes to produce a Z-axis material having
irregularly shaped conductive pathways that extend along the
Z-axis.
[0180] Elastomeric Selectively Conductive Z-axis Material
EXAMPLE 15
[0181] The Z-axis material of Example 9 was imbibed with the
following solution:
8 ELASTOMER SOLUTION 22 gms of Silicone 3-1765 (Dow Corning) 78 gms
OS-20 solvent (Dow Corning)
[0182] by placing the solution in a tank and dipping the Z-axis
material, which is supported on a frame, into the solution. The
impregnated Z-axis material was air dried for 5 minutes in a drying
rack. The drying rack was placed in an oven that was heated to
120.degree. C. for 30 minutes to remove solvent.
[0183] In Examples 16-20 below, the Z-axis material is impregnated
with a silicone elastomer. However, the Z-axis material is also
used without the elastomer.
EXAMPLE 16
[0184] A membrane formed from a stretched porous
polytetrafluoroethylene membrane having the node-fibril structure
shown in FIG. 17 (1000.times. magnification) is 76 .mu.m thick with
a density of 0.22 gm/cm.sup.3 and an air volume of 70% at
25.degree. C., and is available from W. L. Gore & Associates,
was prepared as in Example 1 to form a Z-axis membrane, except that
the masking strips were 2 mil pad with a 5 mil pitch. The Z-axis
membrane was impregnated with a silicone solution containing 20%
Dow Corning.RTM. 3-1753 silicone.
EXAMPLE 17
[0185] A polytetrafluoroethylene membrane similar to that of
Example 16 having the node-fibril structure in FIG. 14 (1000.times.
magnification), was prepared as in Example 1 to form a Z-axis
membrane, except that the masking strips were 8 mils with a 15 mil
pitch. The Z-axis membrane was impregnated with a silicone solution
containing 30% Dow Corning.RTM. 3-1753 silicone.
EXAMPLE 18
[0186] A stretched porous polytetrafluoroethylene membrane with the
node-fibril structure shown in FIG. 15 (1500.times. magnification)
that is 40 .mu.m thick, with a density 0.4 gm/cm.sup.3 and an air
volume of 20% at 25.degree. C., available from W. L. Gore &
Associates, was prepared as in Example 1 to form a Z-axis membrane,
except that the masking strips were 8 mils with a 15 mil pitch. The
Z-axis membrane was impregnated with a silicone solution containing
30% Dow Corning.RTM. 3-1753 silicone.
EXAMPLE 19
[0187] A stretched porous polytetrafluoroethylene membrane with the
node-fibril structure of FIG. 16 (1000.times. magnification) that
is 100 .mu.m thick, with a density of 0.35 gm/cm.sup.3 and an air
volume of 70% at 25.degree. C., available from W. L. Gore &
Associates, was prepared as in Example 1 to form a Z-axis membrane,
except that the masking strips were 8 mils with a pitch of 15 mils.
The Z-axis membrane was impregnated with a silicone solution
containing 30% Dow Corning.RTM. 3-1753 silicone.
EXAMPLE 20
[0188] A stretched porous polytetrafluoroethylene membrane with the
node-fibril structure of FIG. 17 (1000.times. magnification) is 150
.mu.m thick, with a density of 0.20 gm/cm.sup.3 and an air volume
of 70% at 25.degree. C., and which is available from W. L. Gore
& Associates, was prepared as in Example 1 to form a Z-axis
membrane, except that the masking strips were 8 mils with a 15 mil
pitch. The Z-axis membrane was impregnated with a silicone solution
containing 30% Dow Corning.RTM. 3-1765 silicone.
EXAMPLES 21-23
[0189] The Z-axis substrate membrane of Examples 9-11 above, are
impregnated with an epoxy adhesive in order to provide bonding
capability and baked at 160.degree. C.
EXAMPLES 24-29
[0190] The Z-axis materials of Examples 15-20 respectively, which
form the matrix for the elastomer, are contacted in their
unimpregnated state with an expoxy adhesive resin and heated to
160.degree. C. to form a Z-axis adhesive material.
[0191] FIGS. 18 and 19 are scanning electrolmicrographs of an 8 mil
pad and 8 mil pads with a 15 mil pitch respectively.
[0192] Laminated Wafer Level Contact Sheet:
[0193] The laminated wafer level contact sheet 9 will be described
with reference to FIGS. 20-34 and has an upper surface 8 with
contact pads (FIG. 34) arranged in a pattern corresponding to the
first terminals 13 of the base unit and raised conductive metallic
bumps on a lower surface. Each of the contact pads is electrically
coupled to the conductive bumps on the lower surface of the
laminated wafer level contact sheet 9. When the burn-in device is
in use, the conductive bumps make contact with the contact pads of
the wafer under test.
[0194] As seen in FIG. 34, the laminated wafer level contact sheet
includes first 61 and second layers 62. The first layer 61 is
formed from a dielectric material 63 with at least one conductive
via 64 formed in one surface 65 respectively coupled to a
conductive pad 66 on the other surface. These layers form the
substrate that is processed to form the part of the wafer level
contact sheet. The first layer 61 is a substrate 67, preferably
Goreflex.RTM., available from W. L. Gore and Associates, Inc.
Instead of Goreflex.RTM., a dielectric material 63, is formed from
Speedboard C.RTM. or an adhesive-filler-ePTFE composite, and clad
with copper.
[0195] The second layer 62 is formed from a porous, Z-axis material
having a series of electrically isolated, irregularly shaped
conductive, Z-axis pathways with a conductive metal bump or contact
on a lower surface of said second layer. The conductive bump 67 is
coupled to the conductive pads 66 on the first layer 61 through a
blind via 64 and the irregularly shaped, conductive Z-axis pathways
in the adhesive containing Z-axis material.
[0196] As seen in FIGS. 20-34, the laminated wafer level contact
sheet of FIG. 34 is manufactured from first and second dielectric
laminate substrates 67 and 68 of FIGS. 20 and 24 respectively. Each
dielectric is laminated with upper and lower copper layers (FIG.
20).
[0197] Substrate 67 includes a conductive layer 69 (such as copper,
for example), a dielectric layer 70 formed from Speedboard C.RTM.
or an adhesive paste ePTFE composite, and a conductive layer 71
(such as copper, for example). The dielectric layer 70 should not
contain a material which is resistant to etching by a laser or
plasma process, such as a glass reinforced dielectric layer.
Suitable dielectric materials include, but are not limited to
polyimides and polyimide laminates, epoxy resins, organic
materials, or dielectric materials comprised at least in part of
polytetrafluoroethylene. One dielectric material may be obtained
from W. L. Gore & Associates, Inc. under the tradename
SPEEDBOARD.RTM. dielectric material or the adhesive-SiO.sub.2
filled porous substrates described above.
[0198] The thickness of the dielectric layer 70 is important. This
thickness will define the height of the resulting metallic
contacts. A photoresist is applied to copper layers 69 and 71,
respectively and imaged where a well, e.g., a depression or via is
to be formed. Copper in an exposed (imaged) area (not shown) is
etched away by any suitable conventional copper etchant, such as a
cupric chloride based etchant solution. After the copper within the
exposed area is etched away a portion of dielectric layer 70 is
visible. The photoresist may then be removed from the
substrate.
[0199] The exposed dielectric portion is ablated away with a laser
to define a "well" 72 into which a metallic contact will be formed
(FIG. 21). As should be understood, the copper layer 69 functions
as a mask to permit ablation of the exposed dielectric portion 70.
The copper layer 71 acts as a stop and will define the bottom of
the well 72. The ablation of the exposed dielectric portion may be
accomplished by any laser suitable for selective ablation of
organic dielectrics, without removing a copper layer. Lasers which
operate in ultra violet wavelengths are particularly well suited,
such as excimer lasers, and frequency tripled or quadrupled YAG
lasers. However, other types of lasers are also suitable. The laser
may be operated either in a scanning mode, in which the surface of
the substrate is swept with a large laser spot, or in a focused
beam. In addition to laser ablation of the exposed dielectric
portion, other processes may be employed to selectively remove the
exposed dielectric portion, such as but not limited to plasma
etching, reactive ion etching, or chemical etching. However, a
laser ablation process is particularly well suited, as it permits
more control over the shape of the well. Simple diffraction will
provide a tapered conical shape in the case of scanning mode laser
ablation process.
[0200] As a result, a blind via 72 is formed. Thereafter the inside
of the well or via 72 is coated with a conductive metal 73, such as
copper. Copper may be deposited by any suitable technique, such as,
electroless plating, sputtering, evaporation, or deposition of a
conductive coating which allows direct electrodeposition.
[0201] Thereafter, the entire top of the substrate 67, as well as,
a prospective pad area 74 is coated with a photoresist 75 (FIG.
22). The exposed copper 76 on the bottom of substrate 67 is etched
away by any suitable conventional copper etchant, such as a cupric
chloride based etchant solution. The photoresist 75 is then removed
from the top and bottom surfaces of the substrate leaving copper
pad 77 (FIG. 23). Optionally, a first nickel layer and a second
gold layer can be deposited on the outer surface of pad 77, with
the nickel layer functioning to reduce diffusion of the gold layer
into the copper layer.
[0202] The second dielectric laminate substrate 68 (FIG. 24) is
identical to substrate 67 and includes, an upper copper layer 78, a
dielectric 80 and a lower copper layer 79. As with substrate 67,
the dielectric layer 80 must not comprise a material which is
resistant to etching by a laser or plasma process, such as a glass
reinforced dielectric layer.
[0203] Again, a photoresist is applied to copper layers 78 and 79
(not shown), respectively, and the area where a well, depression or
via 81 is to be formed is imaged using conventional techniques.
Copper layer 78 in the imaged and exposed area (not shown) is
etched away by any suitable conventional copper etchant, such as a
cupric chloride based etchant solution. After the copper within the
exposed area is etched, an exposed portion of dielectric layer 80
is visible and ablated away with a laser to define a "well" 81
(FIG. 25). After the well or via 81 has been defined, the base
substrate is processed in any suitable manner which deposits a
surface conductive layer 82, such as copper, on the side walls of
the well or via 81 as discuss above with reference to substrate 67.
Photoresist 83 is then applied to the top of the substrate 68 (FIG.
26) and imaged to form pads and/or traces, as well as on the bottom
of substrate 68 to avoid plating or metallization.
[0204] Areas not protected by the photoresist are metallized with a
metal that has etch selectivity to the copper, such as, nickel and
form a nickel layer 84 (FIG. 27). Thereafter, the deposited nickel
may be coated with a layer of gold for forming a low resistance
contact. The photoresist is then removed from the upper and lower
surfaces of substrate (FIG. 28).
[0205] The laminated wafer level contact sheet is then assembled by
locating a selectively conductive Z-axis material 87 between said
processed first and second dielectric laminate substrates 85 and
86, with process substrate 85 being on top of said Z-axis material
87 (FIG. 29). The three layers are laminated together under
temperature 435 F and pressure 325 psi whereby an adhesive in said
Z-axis material 87 bonds substrates 85 and 86 thereto.
[0206] After the three layer unit 88 is formed (FIG. 30), copper
layer 89 is etched away using a copper etching solution discussed
above, leaving layer 90 (FIG. 31). Thereafter, the dielectric 90 is
removed leaving copper layer 91 having a bump 92 (FIG. 32).
Photoresist 93 is then applied to the via 94 and surrounding areas
96 and 97 on the processed substrate (FIG. 33) and copper layer 98
and exposed copper layer 95 removed (FIG. 34). The photoresist is
removed and the wafer level contact sheet is formed. The conductive
via 94 is coupled to the conductive pad 99 which is then coupled to
the bump 67 through the conductive Z-axis pathways in the Z-axis
material 87.
[0207] Suitable processes for forming the metal coating on the via
include, but are not limited to a conventional electroless copper
plating operation, sputtering, evaporation, or deposition of a
conductive coating which allows direct electrodeposition, or any
other suitable process. Additional electrolytically deposited
copper may be added to thicken this deposit, thereby providing a
more robust surface for additional process steps.
[0208] FIG. 35 is a scanning electron micrograph of a bump formed
on the wafer level contact sheet according to the procedure
described above.
[0209] In FIG. 36, the substrate of FIG. 26 is slightly enlarged to
provide the dimensions of the via and pad surface that is formed to
provide the conductive bump. As seen in FIG. 36, the via has an
upper diameter A, where A is between 25 .mu.m and 75 .mu.m, a
bottom diameter B, where B is between 10 .mu.m and 60 .mu.m, and a
height C, where C is between 20 .mu.m and 75 .mu.m. The diameter D
of the pad that is formed from photoresist 83, is between 35 .mu.m
and 150 .mu.m. The bump 67, shown in FIGS. 34 and 37, has a
substantially planar tip 101, having an end diameter of between 5
.mu.m and 50 .mu.m, with a tolerance of +/-2 .mu.m, which is
temporarily supported by the via 81.
[0210] While preferred embodiments have been shown and described,
it will be understood that it is not intended to limit the
disclosure, but rather it is intended to cover all modifications
within the spirit and scope of the invention as defined in the
appended claims or their equivalents.
* * * * *