U.S. patent application number 09/897954 was filed with the patent office on 2002-01-10 for inductive coupling plasma processing apparatus.
Invention is credited to Amano, Kenji, Satoyoshi, Tsutomu.
Application Number | 20020002947 09/897954 |
Document ID | / |
Family ID | 18703644 |
Filed Date | 2002-01-10 |
United States Patent
Application |
20020002947 |
Kind Code |
A1 |
Satoyoshi, Tsutomu ; et
al. |
January 10, 2002 |
Inductive coupling plasma processing apparatus
Abstract
There is disclosed an inductive coupling plasma processing
apparatus having a processing chamber for subjecting a substrate G
to a plasma processing, a dielectric wall portion constituting an
upper part wall portion or a side wall portion of the chamber, a
high-frequency antenna, disposed on a corresponding portion of the
dielectric wall portion outside the chamber, for forming an
induction field in the chamber, a cover member formed of a
dielectric material disposed inside the dielectric wall portion to
cover the dielectric wall portion, a heater for heating the cover
member, and an insulating member for insulating between the
dielectric wall portion and the heater, wherein a reaction product
generated by a plasma is heated at a temperature without adhering
to the cover member, and heat generated by the heater is prevented
from being conducted to the dielectric wall portion.
Inventors: |
Satoyoshi, Tsutomu;
(Nirasaki-shi, JP) ; Amano, Kenji; (Nirasaki-shi,
JP) |
Correspondence
Address: |
OBLON SPIVAK MCCLELLAND MAIER & NEUSTADT PC
FOURTH FLOOR
1755 JEFFERSON DAVIS HIGHWAY
ARLINGTON
VA
22202
US
|
Family ID: |
18703644 |
Appl. No.: |
09/897954 |
Filed: |
July 5, 2001 |
Current U.S.
Class: |
118/723I ;
156/345.48 |
Current CPC
Class: |
H01J 37/32522 20130101;
H01J 37/321 20130101 |
Class at
Publication: |
118/723.00I ;
156/345 |
International
Class: |
H01L 021/3065 |
Foreign Application Data
Date |
Code |
Application Number |
Jul 7, 2000 |
JP |
2000-206764 |
Claims
What is claimed is:
1. An inductive coupling plasma processing apparatus comprising: a
lower chamber forming a processing chamber in which a substrate to
be treated is subjected to a plasma processing; an upper chamber
forming an antenna chamber in which a high-frequency antenna for
forming an induction field in said processing chamber by a
high-frequency power supplied from the outside is disposed; a
dielectric wall portioning said upper chamber from said lower
chamber; a shower head comprising ejection ports for ejecting a
process gas and a gas channel, provided in said processing chamber;
insulating means attached to the surface of said dielectric wall
portion on a side of said processing chamber; heating means
disposed on the surface of said insulating means on said processing
chamber side; and a cover member formed of a dielectric material
attached to said heating means on said processing chamber side,
wherein said insulating means prevents heat generated from said
heating means from being conducted to said dielectric wall portion,
and said heating means heats said cover member at a temperature at
which a reaction product generated by a plasma is prevented from
adhering to said cover member.
2. The apparatus according to claim 1, wherein said insulating
means comprises an insulating member formed by the dielectric
material held between said dielectric wall portion and said heating
means.
3. The apparatus according to claim 1, wherein said insulating
means has a gap disposed between said dielectric wall portion and
said heating means.
4. The apparatus according to claim 1, wherein said heating means
comprises: a sheet-shaped heater; a low pass filter connected to
said heater; and a heater power supply, and said low pass filter
and said heater power supply are contained in a shield case fixed
to an outer wall of said lower chamber.
5. The apparatus according to claim 1, wherein a thermal capacity
of said cover member is smaller than the thermal capacity of said
dielectric wall portion.
6. The apparatus according to claim 1, wherein said support shelf
portion supporting the dielectric wall and said dielectric wall
portion are supported via a seal ring.
7. An inductive coupling plasma processing apparatus including a
processing chamber in which a plasma is generated in an atmosphere
including a process gas, a high-frequency antenna for receiving
high-frequency power and generating an inductive electric field in
the processing chamber, and a dielectric wall disposed to contact
the plasma, said inductive coupling plasma processing apparatus
comprising: a cover member disposed to prevent a main portion of
said dielectric wall portion from being exposed in said processing
chamber, and formed of a dielectric material; heating means for
heating said cover member at a temperature at which a reaction
product produced by the plasma generated in said processing chamber
is inhibited from adhering to said cover member; and insulating
means for preventing heat generated by said heating means from
being conducted to said dielectric wall portion.
8. The apparatus according to claim 7, wherein said insulating
means comprises an insulating member formed by the dielectric
material held between said dielectric wall portion and said heating
means.
9. The apparatus according to claim 7, wherein said insulating
means has a gap disposed between said dielectric wall portion and
said heating means.
10. An inductive coupling plasma processing apparatus comprising: a
processing chamber for subjecting a substrate to be treated to a
plasma processing; a process gas supply system for supplying a
process gas into said processing chamber; an exhaust system for
evacuating said processing chamber; a dielectric wall portion
constituting an upper part wall portion of said processing chamber;
a high-frequency antenna, disposed on an upper surface of said
dielectric wall portion outside said processing chamber, for
forming an induction field by a supplied high-frequency power in
said processing chamber; a cover member formed of a dielectric
material disposed inside said processing chamber of said dielectric
wall portion to cover said dielectric wall portion; a sheet-shaped
heater disposed between said cover member and said dielectric wall
portion; and an insulating member, disposed between said dielectric
wall portion and said sheet-shaped heater, for insulating between
said dielectric wall portion and said heater, wherein the process
gas is formed into a plasma by said induction field and the
substrate to be treated is subjected to the plasma processing.
11. An inductive coupling plasma processing apparatus comprising: a
processing chamber for subjecting a substrate to be treated to a
plasma processing; a process gas supply system for supplying a
process gas into said processing chamber; an exhaust system for
evacuating said processing chamber; a dielectric wall portion
constituting an upper wall of said processing chamber; a
high-frequency antenna, disposed on an upper surface of said
dielectric wall portion outside said processing chamber, for
forming an induction field by a supplied high-frequency power in
said processing chamber; a cover member formed of a dielectric
material disposed inside said processing chamber of said dielectric
wall portion to cover said dielectric wall portion; a sheet-shaped
heater disposed between said cover member and said dielectric wall
portion; and an insulating member, disposed between said dielectric
wall portion and said sheet-shaped heater, for insulating between
said dielectric wall portion and said heater, wherein the process
gas is formed into a plasma by said induction field and the
substrate to be treated is subjected to the plasma processing.
12. The apparatus according to claim 11, wherein the upper wall is
shaped like a dome.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is based upon and claims the benefit of
priority from the prior Japanese Patent Application No.
2000-206764, filed Jul. 7, 2000, the entire contents of which are
incorporated herein by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to an inductive coupling
plasma processing apparatus for applying plasma processing such as
dry etching to substrates to be treated such as a liquid crystal
display (LCD) substrate by an inductive coupling plasma.
[0004] 2. Description of the Related Art
[0005] In general, in an LCD manufacturing process, an LCD glass
substrate as a substrate to be treated is frequently subjected to
etching, sputtering, chemical vapor-phase development (CVD) or
another plasma processing. Various plasma processing apparatuses
for performing the plasma processing have been used, and among
these an inductive coupling plasma (ICP) processing apparatus is
known which can generate a high-density plasma in an area inside a
processing chamber.
[0006] Typically in the inductive coupling plasma processing
apparatus, a ceiling of a processing chamber (area in the
processing chamber) for performing the plasma processing in a
vacuum is constituted of a dielectric wall portion, and a
high-frequency (RF) antenna is disposed on the portion. Moreover,
when a high-frequency power is supplied to the high-frequency
antenna, an induction field is formed in the processing chamber. A
process gas introduced into the processing chamber is formed into a
plasma by the induction field, and etching or another processing is
applied by an action of the plasma.
[0007] One problem of the inductive coupling plasma processing
apparatus is the adverse influence of particles generated in the
processing chamber on the material to be treated. In this case,
reaction byproducts generated in the substrate processing chamber
when a processing is performed are deposited onto the dielectric
wall portion or the like, and may end up on the surface of the
substrate. During an etching process the byproduct acts as a mask,
causing a problem in which the area under the mask cannot be
etched. Moreover, when a film forming process is performed, a film
is also deposited on the reaction product, and included in the
formed film. Therefore, problems occur such as disconnections of a
wiring pattern and structural defects of a circuit device.
[0008] As a technique for preventing the reaction product from
adhering to the substrate, as disclosed, for example, in Jpn. Pat.
Appln. KOKAI Publication Nos. 11-45878 and 9-199487, a technique of
disposing a heater or the like in the dielectric wall portion and
heating the dielectric wall portion at a predetermined temperature
is known. However, when the dielectric wall portion is heated and
temperature is adjusted to bring the portion to a high-temperature
state as in the conventional techniques, the thermal capacity of
the dielectric wall portion is large, heat dissipation toward an
atmospheric side is large, power consumption increases, and energy
efficiency is deteriorated.
[0009] In recent years, there have been demands for larger LCD
display screens, therefore, the LCD glass substrate has
consequently also enlarged. For this, a huge substrate whose side
is as large as 1 m is necessary. Accordingly, the processing
apparatus is enlarged in size, the dielectric wall portion has also
to be enlarged, the power consumption increases further, and the
energy efficiency is remarkably deteriorated.
[0010] On the other hand, the reaction product can easily be
inhibited from being deposited in the dielectric wall portion at a
higher heating temperature. However, a gate via which the material
to be treated is supplied/removed is hermetically sealed by a
rubber material such as an 0-ring, or a seal member of resin.
Therefore, the heating temperature is limited by the melting point
of the seal member.
BRIEF SUMMARY OF THE INVENTION
[0011] An object of the present invention is to provide an
inductive coupling plasma processing apparatus which can be heated
with a high energy efficiency in order to inhibit a reaction
product from being deposited, and which can be heated without
considering the melting point of a seal member for sealing a
dielectric wall portion and a processing chamber.
[0012] To achieve the project, according to the present invention,
there is provided an inductive coupling plasma processing apparatus
comprising: a lower chamber forming a processing chamber in which a
substrate to be treated is subjected to a plasma processing; an
upper chamber forming an antenna chamber in which a high-frequency
antenna for forming an induction field in the processing chamber by
a high-frequency power supplied from the outside is disposed; a
dielectric wall partioning the upper chamber from the lower
chamber; a shower head portion comprising an ejection port for
ejecting a process gas and a gas channel, provided in the
processing chamber; insulating means attached to the surface of the
dielectric wall portion on a side of the processing chamber;
heating means disposed on the surface of the insulating means on
the processing chamber side; and a cover member formed of a
dielectric material attached to the heating means on the processing
chamber side, wherein the insulating means prevents heat generated
from the heating means from being conducted to the dielectric wall
portion, and the heating means heats the cover member at a
temperature at which a reaction product generated by a plasma is
prevented from adhering to the cover member.
[0013] The insulating means comprises an insulating member formed
by the dielectric material held between the dielectric wall portion
and the heating means. Moreover, the insulating means has a gap
disposed between the dielectric wall portion and the heating
means.
[0014] Furthermore, there is provided an inductive coupling plasma
processing apparatus including a processing chamber in which a
plasma is generated in an atmosphere including a process gas, a
high-frequency autenna for receiving high-frequency power and
generating an inductive electric field in the processing chamber,
and a dielectric wall disposed to contact the plasma, the inductive
coupling plasma processing apparatus comprising: a cover member
disposed to prevent a main portion of the dielectric wall portion
from being exposed in the processing chamber, and formed of a
dielectric material; heating means for heating the cover member at
a temperature at which a reaction product produced by the plasma
generated in the processing chamber is inhibited from adhering to
the cover member; and insulating means for preventing a heat
generated by the heating means from being conducted to the
dielectric wall portion.
[0015] Additional objects and advantages of the invention will be
set forth in the description which follows, and in part will be
obvious from the description, or may be learned by practice of the
invention. The objects and advantages of the invention may be
realized and obtained by means of the instrumentalities and
combinations particularly pointed out hereinafter.
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING
[0016] The accompanying drawings, which are incorporated in and
constitute a part of the specification, illustrate presently
embodiments of the invention, and together with the general
description given above and the detailed description of the
embodiments given below, serve to explain the principles of the
invention.
[0017] FIG. 1 is a sectional view showing an inductive plasma
etching apparatus according to a first embodiment of the present
invention.
[0018] FIG. 2 is a diagram of a cover member for use in a plasma
processing apparatus shown in FIG. 1 as seen from a susceptor
side.
[0019] FIG. 3 is an enlarged sectional view of a main part of the
plasma processing apparatus shown in FIG. 1.
[0020] FIG. 4 is a sectional view showing a sheet-like heater for
use in the plasma processing apparatus shown in FIG. 1.
[0021] FIG. 5 is a sectional view showing a main part of an
apparatus according to a modification example of the plasma
processing apparatus shown in FIG. 1.
[0022] FIG. 6 is a sectional view of the inductive plasma etching
apparatus according to a second embodiment of the present
invention.
DETAILED DESCRIPTION OF THE INVENTION
[0023] Preferred embodiments of the present invention will be
described hereinafter in detail with reference to the drawings.
[0024] FIG. 1 is a diagram showing a sectional constitution of a
first embodiment in an inductive plasma etching apparatus of the
present invention. In the first embodiment, the inductive plasma
etching apparatus will be described as one example. The apparatus
is used to etch a metal film, ITO film, oxide film, and the like in
a manufacturing process for forming a thin film transistor on a
square LCD glass substrate in LCD manufacturing.
[0025] The etching apparatus includes a square rod shaped hermetic
chamber 1 of aluminum whose inner wall surface has been anodized.
The chamber 1 is grounded via a grounding wire 40. This chamber 1
can be disassembled into a plurality of portions. For example, the
chamber 1 is vertically divided into an upper chamber 1a and a
lower chamber 1b via a support shelf 5 for supporting a dielectric
wall portion 2. An area in the upper chamber 1a is formed as an
antenna chamber 3, and an area in the lower chamber 1b is formed as
a processing area 4. Moreover, the dielectric wall portion 2 is
formed of ceramic such as Al.sub.2O.sub.3, quartz, and the like,
and functions as a ceiling of the processing area 4. The support
shelf 5 is disposed to project inwardly between a side wall 3a of
the antenna chamber 3 and a side wall 4a of the chamber 1, and the
dielectric wall portion 2 is inserted into the projected portion
via a resin seal ring 7 and fixed via a vis 6.
[0026] A sheet-shaped heater 9 is disposed substantially on the
whole lower surface of the dielectric wall portion 2 via an
insulating member 8, and is further covered with a cover member 10
constituted of a dielectric material such as ceramic or quartz. A
lead wire of the sheet-shaped heater 9 is connected to a heater
power supply 50 as described later through an insulating member 41
and the side wall 4a of the chamber 1. An outer periphery of the
insulating member 41 is covered with an aluminum cover 42. By this
constitution, the sheet-shaped heater 9 heats the cover member 10
by a power supplied from the heater power supply 50, but is
insulated from the heat of the dielectric wall portion 2 side by
the insulating member 8.
[0027] The dielectric wall portion 2 can also be disassembled, and
a shower housing 11 for supplying a process gas is attached inside
the portion. The shower housing 11 has a cross shape as shown in
FIG. 2, and is structured to support the dielectric wall portion 2
from below. The shower housing 11 for supporting the dielectric
wall portion 2 is hung from a ceiling of the chamber 1 by a
plurality of suspenders (not shown). This shower housing 11 is
preferably formed of a conductive material such as a metal, and the
preferable metal material is an aluminum material whose inner
surface has been anodized in order to prevent contaminants from
being generated.
[0028] A horizontally extending gas channel 12 is formed in the
shower housing 11. The gas channel 12 is connected to a plurality
of downward extending gas ejection holes 12a on a bottom surface of
the dielectric wall portion 2, insulating member 8, sheet-shaped
heater 9 and cover member 10. On the other hand, a gas supply tube
20a is disposed on an upper surface middle portion of the
dielectric wall portion 2 and connected to the gas channel 12. The
gas supply tube 20a extends outward from the ceiling of the chamber
1, and is connected to a process gas supply system 20 including a
process gas supply, valve system, and the like. In the plasma
processing, the process gas supplied from the gas supply system 20
is supplied to the shower housing 11 via the gas supply tube 20a,
and ejected into the chamber 1 via the gas supply holes 12a formed
in the lower surface of the housing.
[0029] Moreover, a high-frequency (RF) antenna 13 is disposed to
contact the upper surface of the dielectric wall portion 2 inside
the antenna chamber 3. This high-frequency antenna 13 is formed of
a flat coil antenna forming a substantially square spiral shape. A
spiral center end of the high-frequency antenna 13 is guided out of
the ceiling of the chamber 1, and connected to a high-frequency
power supply 15 via a matching unit 14. On the other hand, an outer
spiral end of the antenna is connected to the chamber 1, and
therefore has a ground potential.
[0030] In this constitution, a high-frequency power, for example,
having a frequency of 13.56 MHz is applied to the high-frequency
antenna 13 in order to form an induction field from the
high-frequency power supply 15 during the plasma processing.
Moreover, the induction field is formed in the processing chamber 4
by the high-frequency antenna 13, and the process gas supplied from
the shower housing 11 is formed into a plasma by the induction
field. In this case, an output of the high-frequency power supply
15 is appropriately set to a value sufficient for generating the
plasma.
[0031] A susceptor 22 as a base for laying an LCD glass substrate G
thereon is disposed opposite to the high-frequency antenna 13 via
the dielectric wall portion 2 in a lower part of the processing
chamber 4. The susceptor 22 is constituted of a conductive material
such as aluminum whose surface has been anodized. The LCD glass
substrate G is attached to held on the susceptor 22 by an
electrostatic chuck (not shown).
[0032] The susceptor 22 is contained in an insulating frame 24, and
supported by a hollow column 25. Moreover, a gate valve 27 for
supplying/removing the glass substrate G is disposed in the lower
chamber lb.
[0033] The susceptor 22 is connected to a high-frequency power
supply 29 via a matching unit 28 by a power supply rod disposed in
the hollow column 25. The high-frequency power supply 29 applies a
biasing high-frequency power such as a high-frequency power with a
frequency of 6 MHz to the susceptor 22 during the plasma
processing. Ions in the plasma generated in the chamber 1 are
effectively drawn into the glass substrate G by this biasing
high-frequency power.
[0034] Furthermore, a temperature control mechanism formed of a
ceramic heater or another heating member, refrigerant channel, and
the like and a temperature sensor (not shown) are disposed in the
susceptor 22 in order to control the temperature of the glass
substrate G. A piping and wiring for these mechanism and member are
drawn out of the chamber 1 via the hollow column 25.
[0035] Additionally, a bottom part of the lower chamber 1b is
connected to an exhaust mechanism 30 including a vacuum pump, and
the like via an exhaust pipe 31. This exhaust mechanism 30 includes
a vacuum pump and a valve for adjusting an exhaust amount,
evacuates the inside of the chamber 1, and sets/maintains the
pressure inside the chamber 1 during the plasma (e.g., 1.33
Pa).
[0036] A structure of a periphery of the dielectric wall portion 2
and a power supply mechanism of the sheet-shaped heater will next
be described in detail with reference to FIG. 3.
[0037] As described above, the substantial whole lower surface of
the dielectric wall portion 2 is covered with the cover member 10
formed of the dielectric material such as ceramic and quartz, and
the cover member is formed to be sufficiently thinner than the
dielectric wall portion 2. The sheet-shaped heater 9 is disposed
substantially on the whole upper surface of the cover member 10. As
shown in FIG. 4, the sheet-shaped heater 9 is constituted by
holding a heat generator 63 having a predetermined pattern between
resin sheets 61, 62, for example, of polyimide, and has
flexibility.
[0038] The insulating member 8 is substantially entirely held
between the dielectric wall portion 2 and the sheet-shaped heater
9. The insulating member 8 is formed of the dielectric material
such as polytetrafluoroethylene (Teflon: registered trademark).
Additionally, as an example of actual dimensions, the dielectric
wall portion 2 has a length of 120 cm and thickness of 40 mm, the
cover member 10 has a thickness of 5 mm, the insulating member 8
has a thickness of 3 mm, and the sheet-shaped heater 9 has a
thickness of 0.5 mm. Of course, these numerical values differ
depending upon the chamber's specifications. The dielectric wall
portion 2 and cover member 10 are formed of the same or similar
material, and have substantially the same area.
[0039] A lead wire 44 of the sheet-shaped heater 9 extends through
the insulating member 41 formed, for example, of polyimide without
being exposed inside the chamber 1, to prevent the possibility of a
spark from being generated in the vacuum.
[0040] Inside the insulating member 41, lead terminals 71 are
connected to the lead wire 44, drawn out of the chamber 1 through a
connection portion 70 disposed in the lower chamber 1b, and
connected to the heater power supply 50. In the heater power supply
50, the lead terminals 71 are connected to an input side of low
pass filters 75. The low pass filters 75 are contained in a
conductive shield case 76 fixed to a side wall of the grounded
chamber 1 via a screw or the like.
[0041] Moreover, an output side of the low pass filter 75 is
connected to a 60 Hz alternating-current power supply 73 via a
wiring 72. An output of the alternating-current power supply 73 is
adjusted by a power supply adjuster 74. This constitution prevents
the high-frequency power of 13.56 MHz from being conducted to the
outside via the wiring 72, or damaging the alternating-current
power supply 73.
[0042] A processing operation will next be described. In the
operation, the aforementioned inductive coupling plasma etching
apparatus is used to subject the LCD glass substrate G to the
plasma etching.
[0043] First, the gate valve 27 is opened, and the substrate G is
conveyed into the chamber 1 and laid on a laying surface of the
susceptor 22 by a conveyor mechanism (not shown), and fixed onto
the susceptor 22 by the electrostatic chuck (not shown). After the
conveyer mechanism leaves the chamber, the gate valve 27 is
closed.
[0044] Subsequently, the process gas including an etching gas is
ejected into the chamber 1 from the gas supply system 20 via the
gas ejection holes 12a of the shower head 11, and the chamber 1 is
evacuated by the exhaust mechanism 30 via the exhaust tube 31, and
maintained in a pressure atmosphere, for example, of about 1.33
Pa.
[0045] Subsequently, the high frequency power of 13.56 MHz is
applied to the antenna 13 from the high-frequency power supply 15,
and thereby a uniform induction field is formed in the chamber 1
via the dielectric wall portion 2. By the induction field formed in
this manner, the process gas is formed into the plasma, and a
high-density inductive coupling plasma is generated in the chamber
1. The ions in the plasma generated in this manner are effectively
drawn into the glass substrate G by the high-frequency power of 6
MHz applied to the susceptor 22 from the high-frequency power
supply 29, and the substrate G is subjected to a uniform etching
process.
[0046] During the plasma processing, power is supplied to the
sheet-shaped heater 9 from the alternating-current power supply 73
of the heater power supply 50, the cover member 10 is heated at a
predetermined temperature, and the reaction product in the chamber
1 is inhibited from adhering to the cover member 10. In this case,
due to the insulating member 8, the cover member 10 is heated but
the dielectric wall portion 2 is only slightly heated.
[0047] Particularly, since the cover member 10 is sufficiently
thinner than the dielectric wall portion 2, the energy required for
heating can be reduced as compared with the conventional art for
heating the dielectric wall portion 2. Additionally, since the
dielectric wall portion 2 is hardly heated, heat dissipation toward
the atmosphere from the dielectric wall portion 2 can be remarkably
reduced.
[0048] Therefore, according to the first embodiment, an energy
efficiency can be remarkably raised as compared with the
conventional art. Moreover, in the conventional art, since the
dielectric wall portion 2 is heated, the heating temperature is
limited by the melting of the seal ring 7, for example, 120.degree.
C. However, since the dielectric wall portion 2 is hardly heated in
the first embodiment, the cover member 10 can be heated without
considering the melting point of the seal ring 7, and reaction
product can be inhibited from adhering.
[0049] Furthermore, since the sheet-shaped heater 9 is used to heat
the cover member 10, the structure can easily be handled and
simplified.
[0050] Additionally, in the first embodiment, the insulation
between the dielectric wall portion 2 and the cover member 10 is
achieved by the insulating member 8, but this is not limited. As
shown in FIG. 5, a spacer 77 may be disposed between the dielectric
wall portion 2 and the sheet-shaped heater 9 to form an insulating
gap 78.
[0051] A second embodiment will next be described.
[0052] Moreover, in the first embodiment, as shown in FIG. 1, the
dielectric wall portion 2 is disposed horizontally to constitute
the ceiling of the chamber 1, and the flat antenna 13 is disposed
on the portion. However, in the second embodiment, as shown in FIG.
6, a dielectric wall portion 81 (upper chamber 93) is disposed to
constitute the side wall of the upper part of the chamber 1 (lower
chamber 92), and a coil-shaped high-frequency antenna 83 may be
disposed on an outer periphery of the dielectric wall portion
81.
[0053] In the processing apparatus, an insulating member 84,
sheet-shaped heater 85 and cover member 82 are disposed in this
order inside the dielectric wall portion 81. Moreover, a gas
introducing shower head 86 formed of aluminum or another metal
material is disposed on the ceiling, and gas is ejected via a
plurality of gas ejection holes 87 through a gas channel 88
disposed in the ceiling. Moreover, similar to FIG. 3, a lead wire
of the sheet-shaped heater 85 extends through an insulating member
89, and is connected to the heater power supply 50. The insulating
member 89 is covered with an aluminum cover 90. Furthermore, the
dielectric wall portion 81 (upper chamber 93) and chamber 1 (lower
chamber 92) are sealed by a seal ring 91. Other members are similar
to those of FIG. 1, and therefore denoted with the same reference
numerals, and a description thereof is omitted.
[0054] Moreover, in the first and second embodiments, the
sheet-shaped heater is used as heating means of the cover member.
Nonetheless, other heating means such as a quartz heater and
ceramic heater may be used in the present invention. Furthermore,
the present invention is not limited to the etching apparatus
described above; it can be applied to a sputtering apparatus, a CVD
apparatus and a plasma processing apparatus. The LCD substrate is
treated in the embodiment, but other substrates such as a
semiconductor wafer may be treated in this invention. Moreover, the
dielectric wall, or the upper part of the processing chamber, is
not limited to a flat one. A dome shape may be used instead.
[0055] As described above, according to the present invention, the
cover member formed of the dielectric material disposed in the
dielectric wall portion to cover the dielectric wall portion is
heated by the heating means, the reaction product is prevented from
being deposited, and the dielectric wall portion and heating means
are insulated by the insulating means. Therefore, only the cover
member is substantially heated, and the dielectric wall portion is
hardly heated. In this case, since the cover member can be
sufficiently thinner than the dielectric wall portion, the required
heating energy itself can be reduced as compared with the energy
for heating the dielectric wall portion, the dielectric wall
portion is hardly heated, and heat dissipation toward the
atmosphere from the dielectric wall portion can therefore be
reduced. Therefore, the energy efficiency can be remarkably
raised.
[0056] Moreover, when the seal member for sealing the dielectric
wall portion and another wall portion of the processing chamber is
disposed, in the conventional art the dielectric wall portion is
heated, and therefore the heating temperature is usually limited to
the melting point of the resin seal member. However, in the present
invention, the dielectric wall portion is not substantially heated,
the seal member is therefore not heated, and the apparatus can be
heated to prevent the reaction product from adhering to the cover
member without considering the melting point of the seal
member.
[0057] Additional advantages and modifications will readily occur
to those skilled in the art. Therefore, the invention in its
broader aspects is not limited to the specific details and
representative embodiments shown and described herein. Accordingly,
various modifications may be made without departing from the spirit
or scope of the general inventive concept as defined by the
appended claims and their equivalents.
* * * * *