U.S. patent application number 09/878440 was filed with the patent office on 2001-12-06 for integrated circuits and microelectronic structures including one or more layers of germanium-containing glass.
Invention is credited to Croswell, Robert T., Reisman, Arnold, Simpson, Darrell L., Temple, Dorota, Williams, C. Kenneth.
Application Number | 20010048143 09/878440 |
Document ID | / |
Family ID | 22745854 |
Filed Date | 2001-12-06 |
United States Patent
Application |
20010048143 |
Kind Code |
A1 |
Croswell, Robert T. ; et
al. |
December 6, 2001 |
INTEGRATED CIRCUITS AND MICROELECTRONIC STRUCTURES INCLUDING ONE OR
MORE LAYERS OF GERMANIUM-CONTAINING GLASS
Abstract
A layer of doped or undoped germanosilicate glass is formed on a
substrate and the layer of germanosilicate glass is thermally
treated in steam to remove germanium from the germanosilicate
glass, and thereby raise the reflow temperature of the
germanosilicate glass so treated. The layer of germanosilicate
glass on the substrate may be a nonplanar layer of germanosilicate
glass. When thermally treating the nonplanar layer of
germanosilicate glass in steam, the layer of germanosilicate glass
may be planarized simultaneously with the removal of germanium from
the planarized germanosilicate glass. This process may be repeated
to create a hierarchy of reflowed glass where each underlying layer
reflows at a higher temperature than the next deposited glass
layer. The steam thermal treatment step may be preceded by a
thermal pretreatment of the layer of germanosilicate glass in at
least one of a noble gas and nitrogen gas, to reflow the layer of
germanosilicate glass. The thermal pretreating step may partially
planarize the nonplanar layer of germanosilicate glass, and the
thermal treating step may then fully planarize the partially
planarized germanosilicate glass. Alternatively, the thermal
pretreating step may fully planarize the layer of germanosilicate
glass and the themal treating step may then remove germanium from
the fully planarized germanosilicate glass.
Inventors: |
Croswell, Robert T.;
(Raleigh, NC) ; Reisman, Arnold; (Raleigh, NC)
; Simpson, Darrell L.; (Raleigh, NC) ; Temple,
Dorota; (Cary, NC) ; Williams, C. Kenneth;
(Raleigh, NC) |
Correspondence
Address: |
Myers Bigel Sibley & Sajovec
Post Office Box 37428
Raleigh
NC
27627
US
|
Family ID: |
22745854 |
Appl. No.: |
09/878440 |
Filed: |
June 12, 2001 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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09878440 |
Jun 12, 2001 |
|
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09201447 |
Nov 30, 1998 |
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6271150 |
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Current U.S.
Class: |
257/499 ;
257/E21.241; 257/E21.243; 257/E21.274; 257/E21.275;
257/E21.396 |
Current CPC
Class: |
H01L 21/3105 20130101;
H01L 21/31625 20130101; H01L 21/31051 20130101; H01L 21/02337
20130101; H01L 21/022 20130101; H01L 21/02274 20130101; H01L
21/02129 20130101; H01L 29/66181 20130101; H01L 21/31604 20130101;
H01L 21/02126 20130101 |
Class at
Publication: |
257/499 |
International
Class: |
H01L 029/00 |
Goverment Interests
[0001] This invention was made with Government support under
National Science Foundation Grant No. 9222487. The Government has
certain rights to this invention.
Claims
What is claimed is:
1. A method of forming a layer on a substrate comprising the steps
of: forming a layer of germanosilicate glass on a substrate; and
thermally treating the layer of germanosilicate glass in steam to
remove germanium from the germanosilicate glass and thereby raise
the reflow temperature of the germanosilicate glass so treated.
2. A method according to claim 1: wherein the forming step
comprises the step of forming a nonplanar layer of germanosilicate
glass on a substrate; and wherein the thermally treating step
comprises the step of thermally treating the nonplanar layer of
germanosilicate glass in steam to planarize the layer of
germanosilicate glass and to remove germanium from the planarized
germanosilicate glass.
3. A method according to claim 1 wherein the thermally treating
step is preceded by the step of thermally pretreating the layer of
germanosilicate glass in at least one of a noble gas and nitrogen
gas to reflow the layer of germanosilicate glass.
4. A method according to claim 3: wherein the forming step
comprises the step of forming a nonplanar layer of germanosilicate
glass on a substrate; wherein the thermally pretreating step
comprises the step of thermally pretreating the nonplanar layer of
germanosilicate glass in at least one of a noble gas and nitrogen
gas to reflow the nonplanar layer of germanosilicate glass and
partially planarize the nonplanar layer of germanosilicate glass;
and wherein the thermally treating step comprises the step of
thermally treating the partially planarized layer of
germanosilicate glass in steam to remove germanium from the
partially planarized germanosilicate glass and to fully planarize
the partially planarized germanosilicate glass.
5. A method according to claim 3: wherein the forming step
comprises the step of forming a nonplanar layer of germanosilicate
glass on a substrate; wherein the thermally pretreating step
comprises the step of thermally pretreating the nonplanar layer of
germanosilicate glass in at least one of a noble gas and nitrogen
gas to reflow the nonplanar layer of germanosilicate glass and
fully planarize the nonplanar layer of germanosilicate glass; and
wherein the thermally treating step comprises the step of thermally
treating the fully planarized layer of germanosilicate glass in
steam to remove germanium from the fully planarized germanosilicate
glass.
6. A method according to claim 1 wherein the forming step comprises
the step of forming a layer of germanosilicate glass on a substrate
using Plasma Enhanced Chemical Vapor Deposition (PECVD) at about
200.degree. C.
7. A method according to claim 1 wherein the forming step comprises
the step of forming a layer of germanosilicate glass having mole
percentage of germanium dioxide of between about 60% and about
85%.
8. A method according to claim 1 wherein the forming step comprises
the step of forming a layer of germanosilicate glass having mole
percentage of germanium dioxide of between about 77% and about
83%.
9. A method according to claim 1: wherein the forming step
comprises the step of forming a layer of doped germanosilicate
glass on a substrate, the doped germanosilicate glass having lower
reflow temperature than undoped germanosilicate glass; and wherein
the thermally treating step comprises the step of thermally
treating the layer of doped germanosilicate glass in steam to
remove at least one of germanium and dopant from the
germanosilicate glass and thereby raise the reflow temperature of
the doped germanosilicate glass so treated.
10. A method according to claim 9 wherein the forming step
comprises the step of forming a layer of boron doped
germanosilicate glass having mole percentage of germanium dioxide
relative to silicon dioxide of between about 40% and about 85% and
mole percentage of boron of between about 1% and about 4% relative
to the total.
11. A method according to claim 9 wherein the forming step
comprises the step of forming a layer of boron doped
germanosilicate glass having mole percentage of germanium dioxide
relative to silicon dioxide of between about 77% and about 83% and
mole percentage of boron of about 3% relative to the total.
12. A method according to claim 9 wherein the forming step
comprises the step of forming a layer of phosphorous doped
germanosilicate glass having mole percentage of germanium dioxide
relative to silicon dioxide of between about 60% and about 85% and
mole percentage of phosphorous of between about 14% and about 44%
relative to the total.
13. A method according to claim 9 wherein the forming step
comprises the step of forming a layer of phosphorous doped
germanosilicate glass having mole percentage of germanium dioxide
relative to silicon dioxide of between about 55% and about 85% and
mole percentage of phosphorous of about 14% relative to the
total.
14. A method according to claim 9 wherein the forming step
comprises the step of forming a layer of boron and phosphorus doped
germanosilicate glass having mole percentage of germanium dioxide
relative to silicon dioxide of between about 40% and about 85%,
mole percentage of boron of between about 1% and about 4% relative
to the total, and mole percentage of phosphorus of between about 5%
and about 23% relative to the total.
15. A method according to claim 9 wherein the forming step
comprises the step of forming a layer of boron and phosphorus doped
germanosilicate glass having mole percentage of germanium dioxide
relative to silicon dioxide of between about 82% and about 85%,
mole percentage of boron of between about 1% and about 3% relative
to the total, and mole percentage of phosphorus of between about
11% and about 14% relative to the total.
16. A method of forming a plurality of germanosilicate glass layers
on a substrate, comprising the steps of: forming a layer of
germanosilicate glass on a substrate; thermally treating the layer
of germanosilicate glass in steam to remove germanium from the
germanosilicate glass and thereby raise the reflow temperature of
the germanosilicate glass so treated; and repeating the steps of
forming and thermally treating to thereby create a hierarchy of
thermally treated germanosilicate glass layers on the substrate,
wherein each thermally treated germanosilicate glass layer has
higher reflow temperature than the corresponding layer of
germanosilicate glass as formed.
17. A method according to claim 16 wherein each of the repeated
forming and thermally treating steps are performed under same
conditions.
18. A method according to claim 16 wherein at least two of the
repeated thermally treating steps are performed under differing
thermal conditions.
19. A method according to claim 16: wherein the thermally treating
step is preceded by the step of thermally pretreating the layer of
germanosilicate glass in at least one of a noble gas and nitrogen
gas to reflow the layer of germanosilicate glass; and wherein the
repeating step comprises the steps of repeating the steps of
forming, thermally pretreating and thermally treating to thereby
create a plurality of thermally treated reflowed germanosilicate
glass layers on the substrate, wherein each thermally treated
reflowed germanosilicate glass layer has higher reflow temperature
than the corresponding layer of germanosilicate glass as
formed.
20. A method according to claim 19: wherein the forming step
comprises the step of forming a nonplanar layer of germanosilicate
glass on a substrate; wherein the thermally pretreating step
comprises the step of thermally pretreating the nonplanar layer of
germanosilicate glass in at least one of a noble gas and nitrogen
gas to reflow the nonplanar layer of germanosilicate glass and
partially planarize the nonplanar layer of germanosilicate glass;
and wherein the thermally treating step comprises the step of
thermally treating the partially planarized layer of
germanosilicate glass in steam to remove germanium from the
partially planarized germanosilicate glass and to fully planarize
the partially planarized germanosilicate glass.
21. A method according to claim 19: wherein the forming step
comprises the step of forming a nonplanar layer of germanosilicate
glass on a substrate; wherein the thermally pretreating step
comprises the step of thermally pretreating the nonplanar layer of
germanosilicate glass in at least one of a noble gas and nitrogen
gas to reflow the nonplanar layer of germanosilicate glass and
fully planarize the nonplanar layer of germanosilicate glass; and
wherein the thermally treating step comprises the step of thermally
treating the fully planarized layer of germanosilicate glass in
steam to remove germanium from the fully planarized germanosilicate
glass.
22. A method according to claim 16 wherein the forming step
comprises the step of forming a layer of germanosilicate glass on a
substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD)
at about 200.degree. C.
23. A method according to claim 16 wherein the forming step
comprises the step of forming a layer of germanosilicate glass
having mole percentage of germanium dioxide of between about 60%
and about 85%.
24. A method according to claim 16 wherein the forming step
comprises the step of forming a layer of germanosilicate glass
having mole percentage of germanium dioxide of between about 77%
and about 83%.
25. A method according to claim 16: wherein the forming step
comprises the step of forming a layer of doped germanosilicate
glass on a substrate, the doped germanosilicate glass having lower
reflow temperature than undoped germanosilicate glass; and wherein
the thermally treating step comprises the step of thermally
treating the layer of doped germanosilicate glass in steam to
remove at least one of germanium and dopant from the
germanosilicate glass and thereby raise the reflow temperature of
the doped germanosilicate glass so treated.
26. A method according to claim 25 wherein the forming step
comprises the step of forming a layer of boron doped
germanosilicate glass having mole percentage of germanium dioxide
relative to silicon dioxide of between about 40% and about 85% and
mole percentage of boron of between about 1% and about 4% relative
to the total.
27. A method according to claim 25 wherein the forming step
comprises the step of forming a layer of boron doped
germanosilicate glass having mole percentage of germanium dioxide
relative to silicon dioxide of between about 77% and about 83% and
mole percentage of boron of about 3% relative to the total.
28. A method according to claim 25 wherein the forming step
comprises the step of forming a layer of phosphorous doped
germanosilicate glass having mole percentage of germanium dioxide
relative to silicon dioxide of between about 60% and about 85% and
mole percentage of phosphorous of about 14% and about 44% relative
to the total.
29. A method according to claim 25 wherein the forming step
comprises the step of forming a layer of phosphorous doped
germanosilicate glass having mole percentage of germanium dioxide
relative to silicon dioxide of between about 60% and about 85% and
mole percentage of phosphorous of about 14% relative to the
total.
30. A method according to claim 25 wherein the forming step
comprises the step of forming a layer of boron and phosphorus doped
germanosilicate glass having mole percentage of germanium dioxide
relative to silicon dioxide of between about 40% and about 85%,
mole percentage of boron of between about 1% and about 4% relative
to the total, and mole percentage of phosphorus of between about 5%
and about 23% relative to the total.
31. A method according to claim 25 wherein the forming step
comprises the step of forming a layer of boron and phosphorus doped
germanosilicate glass having mole percentage of germanium dioxide
relative to silicon dioxide of between about 82% and about 85%,
mole percentage of boron of between about 1% and about 3% relative
to the total, and mole percentage of phosphorus of between about
11% and about 14% relative to the total.
32. A method according to claim 16: wherein the thermally treating
step is followed by the step of forming a conductive layer on the
thermally treated layer of germanosilicate glass; and wherein the
repeating step comprises the step of repeating the steps of forming
a layer of germanosilicate glass, thermally treating and forming a
conductive layer to thereby create a hierarchy of thermally treated
germanosilicate glass layers on the substrate, that are separated
by conductive layers, wherein each thermally treated
germanosilicate glass layer has higher reflow temperature than the
corresponding layer of germanosilicate glass as formed.
33. A method of forming a plurality layers on a substrate,
comprising the steps of: forming a layer of glass on a substrate,
the glass including at least two compounds in solid solution, one
of which is volatilized by steam; thermally treating the layer of
glass in steam to remove at least some of the compound which is
volatilized by steam from the glass and thereby raise the reflow
temperature of the glass so treated; and repeating the steps of
forming and thermally treating to thereby create a hierarchy of
thermally treated glass layers on the substrate, wherein each
thermally treated glass layer has higher reflow temperature than
the corresponding layer of glass as formed.
34. A method according to claim 33 wherein each of the repeated
forming and thermally treating steps are performed under same
conditions.
35. A method according to claim 33 wherein at least two of the
repeated thermally treating steps are performed under differing
thermal conditions.
36. A method according to claim 33: wherein the thermally treating
step is followed by the step of forming a conductive layer on the
thermally treated layer of glass; and wherein the repeating step
comprises the step of repeating the steps of forming a layer of
glass, thermally treating and forming a conductive layer to thereby
create a plurality of thermally treated glass layers on the
substrate, that are separated by conductive layers, wherein each
thermally treated glass layer has higher reflow temperature than
the corresponding layer of glass as formed
37. A method according to claim 33 wherein a first one of the
thermally treated glass layers has higher dielectric constant than
a second one of the thermally treated glass layers.
38. A method according to claim 37 wherein the first one of the
thermally treated glass layers comprises at least one of
germanotitanate and germanostannate glass and wherein the second
one of the thermally treated glass layers comprises germanosilicate
glass.
39. A method of forming a layer on a substrate comprising the steps
of: forming a layer of germanium-containing glass on a substrate;
and thermally treating the layer of germanium-containing glass in
steam to remove germanium from the germanium-containing glass and
thereby raise the reflow temperature of the germanium-containing
glass so treated.
40. A method according to claim 39: wherein the forming step
comprises the step of forming a nonplanar layer of
germanium-containing glass on a substrate; and wherein the
thermally treating step comprises the step of thermally treating
the nonplanar layer of germanium-containing glass in steam to
planarize the layer of germanium-containing glass and to remove
germanium from the planarized germanium-containing glass.
41. A method according to claim 39 wherein the thermally treating
step is preceded by the step of thermally pretreating the layer of
germanium-containing glass in at least one of a noble gas and
nitrogen gas to reflow the layer of germanium-containing glass.
42. A method according to claim 41: wherein the forming step
comprises the step of forming a nonplanar layer of
germanium-containing glass on a substrate; wherein the thermally
pretreating step comprises the step of thermally pretreating the
nonplanar layer of germanium-containing glass in at least one of a
noble gas and nitrogen gas to reflow the nonplanar layer of
germanium-containing glass and partially planarize the nonplanar
layer of germanium-containing glass; and wherein the thermally
treating step comprises the step of thermally treating the
partially planarized layer of germanium-containing glass in steam
to remove germanium from the partially planarized
germanium-containing glass and to fully planarize the partially
planarized germanium-containing glass.
43. A method according to claim 41: wherein the forming step
comprises the step of forming a nonplanar layer of
germanium-containing glass on a substrate; wherein the thermally
pretreating step comprises the step of thermally pretreating the
nonplanar layer of germanium-containing glass in at least one of a
noble gas and nitrogen gas to reflow the nonplanar layer of
germanium-containing glass and fully planarize the nonplanar layer
of germanium-containing glass; and wherein the thermally treating
step comprises the step of thermally treating the fully planarized
layer of germanium-containing glass in steam to remove germanium
from the fully planarized germanium-containing glass.
44. A method according to claim 39 wherein the germanium-containing
glass comprises at least one of germnanotitanate glass and
germanostannate glass.
45. A method according to claim 39 wherein the forming step
comprises the step of lining a trench in the substrate with a layer
of germanium-containing glass.
46. A method according to claim 39 wherein the thermally treating
step is followed by the step of forming a contact on the layer of
thermally treated germanium-containing glass, opposite the
substrate, to thereby form a capacitor.
47. A method according to claim 44 wherein the thermally treating
step is followed by the step of forming a contact on the layer of
thermally treated germanium-containing glass, opposite the
substrate, to thereby form a capacitor.
48. A method according to claim 45 wherein the thermally treating
step is followed by the step of forming a contact on the layer of
thermally treated germanium-containing glass, opposite the
substrate, to thereby form a capacitor.
49. A microelectronic structure comprising: a microelectronic
substrate; and a plurality of layers of germanosilicate glass on
the microelectronic substrate, the layers of germanosilicate glass
comprising same mole percentage germanium dioxide.
50. A microelectronic structure according to claim 49 further
comprising: a conductive layer between adjacent layers of
germanosilicate glass.
51. A microelectronic structure according to claim 49 wherein the
microelectronic substrate includes a trench therein, the
microelectronic structure further comprising a layer of
germanosilicate glass in the trench.
52. A microelectronic structure according to claim 49 wherein the
layer of germanosilicate glass in the trench comprises same mole
percentage germanium dioxide as the plurality of layers of
germanosilicate glass on the microelectronic substrate.
53. A microelectronic structure according to claim 49 wherein the
microelectronic substrate includes a trench therein, the
microelectronic structure further comprising a layer of
germanium-containing glass in the trench.
54. A microelectronic structure according to claim 53 wherein the
germanium-containing glass comprises at least one of
germanotitanate glass and germanostannate glass.
55. A microelectronic structure comprising: a microelectronic
substrate; a first layer of germanosilicate glass on the
microelectronic substrate; a second layer of germanosilicate glass
on the first layer of germanosilicate glass, opposite the
microelectronic substrate, wherein the second layer of
germanosilicate glass comprises higher mole percentage germanium
dioxide than the first layer of germanosilicate glass.
56. A microelectronic structure according to claim 55 further
comprising: a conductive layer between the first and second layers
of germanosilicate glass.
57. A microelectronic structure according to claim 55 wherein the
microelectronic substrate includes a trench therein, the
microelectronic structure further comprising a layer of
germanosilicate glass in the trench.
58. A microelectronic structure according to claim 57 wherein the
layer of germanosilicate glass in the trench comprises same mole
percentage germanium dioxide as the first layer of germanosilicate
glass.
59. A microelectronic structure according to claim 55 wherein the
microelectronic substrate includes a trench therein, the
microelectronic structure further comprising a layer of
germanium-containing glass in the trench.
60. A microelectronic structure according to claim 59 wherein the
germanium-containing glass comprises at least one of
germanotitanate glass and germanostannate glass.
61. An integrated circuit comprising: an integrated circuit
substrate including a plurality of microelectronic devices therein;
a plurality of spaced apart conductive layers on the integrated
circuit substrate that electrically connect the plurality of
microelectronic devices to one another, the plurality of spaced
apart conductive layers including an outermost conductive layer and
at least one underlying conductive layer beneath the outermost
conductive layer; and a capping layer on the outermost conductive
layer, opposite the at least one underlying conductive layer, the
capping layer comprising germanosilicate glass.
62. An integrated circuit according to claim 61 further comprising:
a plurality of layers of germanosilicate glass on the integrated
circuit substrate, a respective one of which is between adjacent
conductive layers, the layers of germanosilicate glass comprising
same mole percentage germanium dioxide.
63. An integrated circuit according to claim 62 wherein the
integrated circuit substrate includes a trench therein, the
integrated circuit further comprising a layer of germanosilicate
glass in the trench.
64. An integrated circuit according to claim 63 wherein the layer
of germanosilicate glass in the trench comprises same mole
percentage germanium dioxide as the plurality of layers of
germanosilicate glass on the microelectronic substrate.
65. An integrated circuit according to claim 61 wherein the
microelectronic substrate includes a trench therein, the
microelectronic structure further comprising a layer of
germanium-containing glass in the trench.
66. An integrated circuit according to claim 65 wherein the
germanium-containing glass comprises at least one of
germanotitanate glass and germanostannate glass.
Description
FIELD OF THE INVENTION
[0002] This invention relates to methods of forming glass layers,
and more particularly to methods of forming microelectronic glass
layers, and microelectronic structures including the same.
BACKGROUND OF THE INVENTION
[0003] Glass layers are widely used in microelectronic devices. As
the integration density of microelectronic devices continues to
increase, it is desirable to provide higher performance glass
layers.
[0004] Glass layers may provide insulating layers for
microelectronic devices. For example, insulating layers may be used
for trench isolation and interlayer dielectric regions in
microelectronic devices. As is well known to those having skill in
the art, trench isolation techniques are used to isolate
microelectronic devices in a microelectronic substrate by forming a
trench in the microelectronic substrate, between devices, and
filling the trench with an insulating material. In interlayer
dielectric applications, a layer of insulating material is used to
separate conductive layers (often referred to as "wiring layers" or
"metalization layers") from one another and from the
microelectronic substrate. Glass layers also may be used for gate
dielectrics, capacitor dielectrics and other microelectronic
applications.
[0005] In both trench isolation and interlayer dielectric
applications, it may be desirable for the insulating material to
exhibit high dielectric breakdown strength, low dielectric constant
and loss, minimal chemical attack on adjacent films, ease of
deposition and etching, low stress, low charge density and/or good
chemical stability. Moreover, an insulating material should reflow
at relatively low temperatures, so as to obtain smooth or planar
layers that can reduce nonplanarities that may be introduced during
microelectronic device fabrication. In addition, if multiple
interlayer dielectric layers are employed, it may be desirable that
such layers provide a softening point hierarchy, at least with
respect to the final layer that is deposited at any given point in
the process.
[0006] Many types of glasses have been used as insulating materials
in microelectronic applications. For example, silicon dioxide
(SiO.sub.2) has been used. Phosphosilicate glass (PSG) that
incorporates phosphorus in the form of P.sub.2O.sub.5 into the pure
SiO.sub.2 material, has also been used. Borophosphosilicate glass
(BPSG) that incorporates boron as B.sub.2O.sub.3 into PSG has also
been used. Each of these glasses may have various advantages and
disadvantages.
[0007] Germanosilicate glass, which is a solid solution of silicon
dioxide (SiO.sub.2) and germanium dioxide (GeO.sub.2), has also
been investigated as an insulating material. For example, in U.S.
Pat. No. 4,417,914 to Lehrer, a method is provided for depositing a
thin film binary glass which has a softening or flow point far
below temperatures at which glass is normally used in connection
with integrated circuits flow. After the binary glass has been
deposited on a semiconductor substrate, it is heated and reflowed.
Preferably, the glass comprises a mixture of germanium dioxide and
silicon dioxide, wherein the germanium dioxide is no greater than
approximately 50 mole percent of the mixture. Phosphorus is added
to the glass film for passivation of the underlying devices. See
the Lehrer abstract.
[0008] Another use of germanosilicate glass for microelectronic
devices is described in a publication by Ogino et al. entitled "A
New Planarization Technique for LSI Fabrication Utilizing Si--Ge
Film Oxidation", Japanese Journal of Applied Physics, Vol. 24, No.
1, January 1985, pp. 95-101. A new planarization technique in the
LSI process using Si--Ge film oxidation is proposed. An Si--Ge film
is deposited by the thermal decomposition of SiH.sub.4 and
GeH.sub.4 and then oxidized in wet O.sub.2 ambient. During the
oxidation, a large degree of fluidity appears below 800.degree. C.,
a temperature much lower than that needed for phosphosilicate glass
flow. The oxide growth rate is more than one order of magnitude
higher than that in crystalline Si. The oxide thickness decreases
with increasing Ge content and oxidation temperature, owing to Ge
evaporation. The planarization is also related to Ge evaporation.
After the entire Si--Ge film has been oxidized, neither glass flow
nor Ge evaporation occur, even at temperatures higher than that of
the oxidation. The electrical properties of the Si--Ge oxide film
are good enough for its use as an insulating layer. The film does
not react with an underlying SiO.sub.2 or Si.sub.3N.sub.4 layer.
See the Ogino et al. 1985 abstract.
[0009] In a subsequent publication entitled "A Planarization
Technique Utilizing Oxide Flow During H.sub.2Treatment of a
SiO.sub.2--GeO.sub.2 Film", Japanese Journal of Applied Physics,
Vol. 25, No. 7, 1986, pp. 1115-1120, Ogino et al. describe that a
large oxide flow has been found to appear when a
SiO.sub.2--GeO.sub.2 mixed glass film is treated in a low-pressure
H.sub.2 gas at 900.degree. C. Simultaneously, the greater part of
the GeO.sub.2 component is evaporated. The flow mechanism is
explained by the diffusion and evaporation of GeO molecules
produced by GeO.sub.2 reduction. A planarization process utilizing
this flow exhibits a large effect at low temperatures in comparison
with phosphosilicate-glass flow. The oxide profile after a H.sub.2
treatment is no longer changed by a high-temperature treatment. The
formed oxide is highly durable against acids. Electrical properties
such as the dielectric constant, resistivity, and dielectric
strength are comparable to those of a SiO.sub.2 film grown by the
thermal oxidation of Si. The problem of a small amount of Ge
crystallized on the bottom of the oxide layer is controlled by a
decrease in the H.sub.2 pressure. See the Ogino et al. 1986
abstract.
[0010] Accordingly, germanosilicate glass holds promise for use in
microelectronic devices as a potentially low reflow temperature
layer with potentially high performance characteristics. It is also
known that silicate glass can be doped with phosphorus and/or boron
to further lower the reflow temperature thereof. However,
notwithstanding this potential, there continues to be a need for
improved methods of forming a layer of germanosilicate glass on a
substrate and of using layers of germanosilicate glass in
microelectronic devices.
SUMMARY OF THE INVENTION
[0011] According to one aspect of the present invention, a layer of
germanosilicate glass is formed on a substrate and the layer of
germanosilicate glass is thermally treated in steam to remove
germanium from the germanosilicate glass, and thereby raise the
reflow temperature of the germanosilicate glass so treated. It has
been found that the steam may be used to remove germanium from the
germanosilicate glass and can also improve the characteristics of
the steam-annealed germanosilicate glass. In particular, the
germanosilicate glass may be water insoluble after a steam anneal,
over a wide range of composition variations. Moreover, in contrast
with conventional anneals in hydrogen, the steam treated
germanosilicate glass can have a smooth surface that is free of
blowholes and other imperfections. Finally, although as-formed
germanosilicate glass may have very high leakage current
characteristics, low leakage current characteristics may be present
after the steam treatment.
[0012] The layer of as deposited germanosilicate glass on the
substrate may be a nonplanar (conformal or nonconformal) layer of
germanosilicate glass. When thermally treating the nonplanar layer
of germanosilicate glass in steam, the layer of germanosilicate
glass may be planarized simultaneous with the removal of germanium
from the planarized germanosilicate glass. The steam thermal
treatment step may be preceded by a thermal pretreatment of the
layer of germanosilicate glass in at least one of a noble gas and
nitrogen gas, to reflow the layer of germanosilicate glass. The
thermal pretreating step may partially planarize the nonplanar
layer of germanosilicate glass, and the thermal treating step may
then fully planarize the partially planarized germanosilicate
glass. Alternatively, the thermal pretreating step may fully
planarize the layer of germanosilicate glass and the thermal
treating step may then remove germanium from the fully planarized
germanosilicate glass. The thermal pretreating step also may
further improve the electrical characteristics of the layer of
germanosilicate glass, compared to the steam thermal treatment step
alone.
[0013] The layer of germanosilicate glass is preferably formed on a
substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD)
at about 200.degree. C. In order to provide reduced reflow
temperature while avoiding undesired crystallization of the
germanosilicate glass layer and to provide water insolubility, the
as-deposited layer of germanosilicate glass preferably has a mole
percentage of germanium dioxide of between about 60% and about 85%.
It has been found that at mole percentages below about 60%, it is
difficult to planarize the germanosilicate glass at acceptable
microelectronic device processing temperatures. Moreover, above
about 85% mole percentage germanium dioxide, the thermally
pretreated and/or thermally treated germanosilicate glass may at
least partially undesirably crystallize.
[0014] More preferably according to the present invention, the
layer of germanosilicate glass has a mole percentage of germanium
dioxide of between about 77% and about 83%. Within this range, the
germanosilicate glass can be planarized using thermal treatments in
steam at acceptable microelectronic processing times and
temperatures while avoiding unwanted crystallization behavior. For
example, it has been found that a layer of germanosilicate glass
having 80% mole percentage of germanium dioxide can be planarized
at temperatures as low as 750.degree. C. in six hours, at
800.degree. C. in three hours, and at 850.degree. C. in one
hour.
[0015] According to another aspect of the present invention, a
layer of doped germanosilicate glass is formed on a substrate, the
doped germanosilicate glass having lower reflow temperature than
undoped germanosilicate glass. The layer of doped germanosilicate
glass is thermally treated in steam to remove germanium from the
germanosilicate glass and thereby raise the reflow temperature of
the doped germanosilicate glass so treated. The thermal treatment
in steam also may remove some dopant. Accordingly, by using doped
germanosilicate glass, even lower reflow temperatures may be
obtained than was described above for undoped germanosilicate
glass.
[0016] When boron is used to dope the germanosilicate glass, the
boron-doped germanosilicate glass preferably has a mole percentage
of germanium dioxide of between about 40% and about 85% relative to
the silicon dioxide which encompasses reflow and crystallization
boundaries, respectively, and a mole percentage of boron as
BO.sub.1.5 of between about 1% and about 4% relative to the total
borogermanosilicate glass (GeO.sub.2+SiO.sub.2+BO.sub.1.5). More
preferably, the layer of boron-doped germanosilicable glass has a
mole percentage of germanium dioxide of between about 77% and about
83% relative to the silicon dioxide and mole percentage of boron of
about 3 percent relative to the total borogermanosilicate glass
(GeO.sub.2+SiO.sub.2+BO.sub.1.5).
[0017] Alternatively, a layer of phosphorous doped germanosilicate
glass preferably has mole percentage of germanium dioxide of
between about 60% and about 85% relative to silicon dioxide and
mole percentages of phosphorous as PO.sub.2.5 of between about 14%
and about 44% relative to the total phosphogermanosilicate glass
(GeO.sub.2+SiO.sub.2+PO.sub.2.5). More preferably, the phosphorous
doped germanosilicate glass has mole percentage of germanium
dioxide relative to silicon dioxide of between about 55% and about
85% and mole percentage of phosphorous of about 14% of the total
phosphogermanosilicate glass (GeO.sub.2+SiO.sub.2+PO.sub.2.5-
).
[0018] More preferably, both boron and phosphorus are used in
combination to dope the germanosilicate glass. The boron and
phosphorus doped germanosilicate glass preferably has a mole
percentage of germanium dioxide of between about 40% and about 85%
relative to the silicon dioxide, a mole percentage of phosphorus as
PO.sub.2.5 of between about 5% and about 23%, and mole percentage
of boron as BO.sub.1.5 of between about 1% and about 4%, both
relative to the total borophosphogermanosilic- ate glass
(GeO.sub.2+SiO.sub.2+PO.sub.2.5+BO.sub.1.5). More preferably, the
layer of boron and phosphorus doped germanosilicate glass has a
mole percentage of germanium dioxide of between about 82% and about
85% relative to silicon dioxide, a mole percentage of phosphorus as
PO.sub.2.5 of between about 11% and about 14% and a mole percentage
of boron as BO.sub.1.5 of between about 1% and 3%, both relative to
the total borophosphogermanosilicate glass
(GeO.sub.2+SiO.sub.2+PO.sub.2.5+BO- .sub.1.5).
[0019] Multiple germanosilicate glass layers may be formed on a
substrate by forming a layer of germanosilicate glass on a
substrate, thermally treating the layer of germanosilicate glass in
steam to remove germanium from the germanosilicate glass and
thereby raise the reflow temperature of the germanosilicate glass
so treated, and repeating the steps of forming and thermally
treating. A hierarchy of thermally treated germanosilicate glass
layers is thereby created on the substrate, wherein each thermally
treated germanosilicate glass layer has higher reflow temperature
than the corresponding layer of germanosilicate glass as formed.
Accordingly, in microelectronic device fabrication, wherein
multiple insulating layers are often desired on a microelectronic
substrate, the same material (such as germanosilicate glass) can be
used for each layer, and thermally treated to raise the reflow
temperature so that thermal treatment of an overlying layer will
not cause additional flow in an underlying layer even when the
originally deposited composition is the same.
[0020] In one embodiment, each of the forming and thermally
treating steps are performed under the same conditions.
Accordingly, multiple germanosilicate glass layers may be formed on
a substrate using identical process conditions without causing an
underlying layer to flow during formation and reflow of an
overlying layer. In other applications, differing thermal
conditions may be used in at least two of the repeated thermally
treating steps. When forming multiple layers of germanosilicate
glass, one or more of the layers may also be thermally pretreated
in at least one of the noble gas and nitrogen gas to reflow the
layer of germanosilicate glass as was described above. Each layer
may be formed using PECVD as described above and may be doped or
undoped germanosilicate glass having preferred mole percentage
ranges as was described above.
[0021] The thermal treating step may be followed by the step of
forming a conductive layer on the thermally treated layer of
germanosilicate glass. The steps of forming a layer of
germanosilicate glass, thermally treating and forming a conductive
layer are repeatedly performed to thereby create a hierarchy of
thermally treated germanosilicate glass layers on the substrate,
that are separated by conductive layers, wherein each thermally
treated germanosilicate glass layer has higher reflow temperature
than the corresponding layer of germanosilicate glass as formed. In
this application, the germanosilicate glass functions as an
interlayer dielectric layer for a microelectronic device. In other
applications, doped or undoped germanosilicate layers or other
glass alloys may perform other functions in a microelectronic
device including but not limited to masking layers, capping layers,
trench isolation layers, passivating layers and high dielectric
constant capacitor dielectrics.
[0022] The above described methods of repeatedly forming a layer
and thermally treating the layer may be performed using glass other
than germanosilicate glass, that includes at least two compounds in
solid solution, one of which is volatilized by steam. The layer of
glass is thermally treated in steam to remove at least some of the
compound which is volatilized by steam and thereby raise the reflow
temperature of the glass so treated. The steps of forming a layer
of glass and thermally treating the layer of glass in steam are
repeatedly performed to thereby create a hierarchy of thermally
treated glass layers on the substrate wherein each thermally
treated glass layer has higher reflow temperature than the
corresponding layer of glass as formed. Examples of other
germanium-containing glasses that may be used include
germanostannate (GeO.sub.2+SnO.sub.2) and germanotitanate
(GeO.sub.2+TiO.sub.2) glasses. These glasses may be particularly
useful as high dielectric constant dielectric layers for integrated
circuit capacitors, including trench capacitors and surface
capacitors
[0023] Microelectronic structures according to the invention
include a microelectronic substrate and a plurality of layers of
germanosilicate glass on the microelectronic substrate, the layers
of germanosilicate glass comprising the same mole percentage
germanium dioxide. A conductive layer may be included between
adjacent layers of germanosilicate glass. Thus, multiple layers of
germanosilicate glass, of the same mole percentage germanium
dioxide may be used, for example for interlayer dielectric layers
in an integrated circuit. The microelectronic substrate may also
include a trench therein and a layer of germanosilicate glass in
the trench. The layer of germanosilicate glass may comprise the
same mole percentage germanium dioxide as the plurality of layers
of germanosilicate glass on the microelectronic substrate.
[0024] In other embodiments, two different glasses may be used for
two different purposes on a microelectronic substrate. For example,
germanosilicate glass may be used for interlayer dielectric layers
and germanostannate or germanotitanate glass may be used as the
dielectric layer of a planar or trench capacitor. Accordingly,
integrated circuits according to the invention may include
planarized capacitor structures that use suitable alloys containing
germanium dioxide.
[0025] Integrated circuits according to the invention may also
include a capping layer on the outermost conductive layer opposite
at least one underlying conductive layer. The capping layer may
also comprise germanosilicate glass, preferably of the same mole
percentage germanium dioxide as the plurality of layers of
germanosilicate glass on the microelectronic substrate and/or in
the trench. Integrated circuits according to the invention may also
include a passivating layer that may comprise germanosilicate
glass, preferably of the same mole percentage germanium dioxide as
the plurality of germanosilicate glass layers on the
microelectronic substrate and/or in the trench.
[0026] Intermediate products according to the present invention
include a microelectronic substrate, a first layer of
germanosilicate glass on the microelectronic substrate and a second
layer of germanosilicate glass on the first layer of
germanosilicate glass, opposite the microelectronic substrate. The
second layer of germanosilicate glass comprises higher mole
percentage germanium dioxide than the first layer of
germanosilicate glass. In other words, the first layer of
germanosilicate glass may be formed and thermally treated in steam
to thereby remove germanium from the germanosilicate glass. The
second layer of germanosilicate glass is the same as the first
layer of germanosilicate glass as formed but has not yet been
thermally treated to remove germanium from the germanosilicate
glass. A conductive layer may be included between the first and
second layers of germanosilicate glass. A trench may also be
included, with a layer of germanosilicate glass in the trench. The
layer of germanosilicate glass in the trench may comprise the same
mole percentage germanium dioxide as the first layer of
germanosilicate glass.
[0027] Accordingly, doped or undoped germanosilicate glass or other
glass systems may be used for many purposes in microelectronic
devices, including but not limited to interlayer dielectrics,
capacitor dielectrics, gate dielectrics, isolation regions and
capping layers. Improved surface and electrical characteristics may
be obtained while allowing reflow at acceptably low temperatures
and times.
BRIEF DESCRIPTION OF THE DRAWINGS
[0028] FIGS. 1A-1C illustrate overall methods of forming
germanosilicate glass layers according to the invention.
[0029] FIGS. 2A-2B illustrate a first embodiment of methods of
forming germanosilicate glass layers on a substrate according to
the invention.
[0030] FIGS. 3A-3C illustrate a second embodiment of forming
germanosilicate glass layers on a substrate according to the
invention.
[0031] FIGS. 4A-4C illustrate a third embodiment of forming
germanosilicate glass layers on a substrate according to the
invention.
[0032] FIGS. 5A-5D illustrate methods of forming integrated
circuits including multiple layers of germanosilicate glass, and
intermediate product and final product integrated circuits so
formed according to the invention.
[0033] FIGS. 6A and 6B graphically illustrate crystalline phase
diagrams for GeO.sub.2--TiO.sub.2 and GeO.sub.2--SnO.sub.2
respectively.
[0034] FIGS. 7A-7C are cross-sectional views illustrating
fabrication of trench capacitors according to the present
invention.
[0035] FIGS. 8A-8C are cross-sectional views illustrating
fabrication of surface capacitors according to the present
invention.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
[0036] The present invention now will be described more fully
hereinafter with reference to the accompanying drawings, in which
preferred embodiments of the invention are shown. This invention
may, however, be embodied in many different forms and should not be
construed as limited to the embodiments set forth herein; rather,
these embodiments are provided so that this disclosure will be
thorough and complete, and will fully convey the scope of the
invention to those skilled in the art. In the drawings, the
thickness of layers and regions are exaggerated for clarity. Like
numbers refer to like elements throughout. It will be understood
that when an element such as a layer, region or substrate is
referred to as being "on" another element, it can be directly on
the other element or intervening elements may also be present. In
contrast, when an element is referred to as being "directly on"
another element, there are no intervening elements present.
[0037] FIGS. 1A-1C illustrate overall methods of forming
germanosilicate glass layers according to the invention. FIG. 1A
illustrates forming a layer of germanosilicate glass on a
substrate. As shown in FIG. 1A, germanosilicate glass may be formed
on substrates using Plasma Enhanced Chemical Vapor Deposition
(PECVD) in a PECVD Reactor System 100. The PECVD Reactor System 100
illustrated in FIG. 1A includes a reactor vessel 102 that is heated
by three-zone heater 104 and in which plasma is generated by an
upstream plasma coil 106 and a downstream plasma coil 108. A wafer
boat 110, preferably a 14 rail two hemisphere boat, maintains the
substrates 120 in spaced apart relation in the reactor vessel 102.
A gas manifold 112 injects appropriate gases into the reactor
vessel 102 via one or more injectors 114. Axial injectors,
cross-flow shower injectors and/or other injectors may be used.
When forming undoped germanosilicate glass, a flow of SiH.sub.4 and
GeH.sub.4 and O.sub.2 may be injected into the reactor vessel 102.
When boron doping, a flow of B.sub.2H.sub.6 may be added. When
phosphorous doping, a flow of PH.sub.3 may be added. Other gasses
including but not limited to carrier gasses may also be added as
appropriate. PECVD of germanosilicate glass may take place at about
200.degree. C.
[0038] The detailed design of PECVD Reactor System 100 is well
known to those having skill in the art and need not be described
further herein. It will also be understood that a layer of
germanosilicate glass may be formed on substrates 120 using Low
Pressure CVD (LPCVD), Atmospheric Pressure CVD (APCVD), spray
coating, spin coating and other conventional methods well known to
those having skill in the art. Preferably, the layer of
germanosilicate glass is formed at temperatures that are
sufficiently low so as not to unduly disturb the underlying
structure of the substrate.
[0039] As shown in FIG. 1B, a layer of germanosilicate glass is
thermally pre-treated in at least one of a noble gas and nitrogen
gas. Pretreating may take place in an annealing furnace 130 that is
heated by heaters 132. One or more injectors 134 may provide a flow
of a noble gas (a Group O element including helium, neon, argon,
krypton, xenon and radon) and/or nitrogen gas. The design of the
annealing furnace 130 is well known to those having skill in the
art and need not be described further herein.
[0040] Referring now to FIG. 1C, a thermal treatment of the layer
of germanosilicate glass in steam is performed to remove germanium
from the germanosilicate glass and thereby raise the reflow
temperature of the germanosilicate glass so treated. Thermal
treatment may take in the same annealing furnace as was used for
pretreatment in FIG. 1-B. However, during the thermal treatment,
steam is provided via one or more injectors 134. Accordingly, the
annealing furnace is labeled 130' in FIG. 1C. As is understood by
those having skill in the art, steam may be generated by pyrogenic
combustion of hydrogen and oxygen. Other methods of generating
steam may also be used, such as bubbling of carrier gas through a
source of deionized water. Preferably, steam is generated that no
excess hydrogen gas is present which may cause blow holes or other
imperfections in the thermally treated layer of germanosilicate
glass. It will also be understood by those having skill in the art
that all the steps of FIGS. 1A-1C may take place in a single
reactor vessel which is adapted for multiple uses. Moreover,
different numbers of substrates 120 may be treated in each step of
FIGS. 1A-1C, and different substrate holders 110 may be used.
[0041] Referring now to FIGS. 2A-2B, 3A-3C and 4A-4C, three
embodiments of methods of forming a layer on a substrate will be
described. Referring now to FIG. 2A, a microelectronic substrate
120 such as a monocrystalline silicon wafer, may include thereon
microelectronic structures 150, for example gate electrodes or
conductive lines, that cause the substrate 120 to have a nonplanar
exposed surface. As shown in FIG. 2A, a layer of germanosilicate
glass 200 is formed on the substrate, for example using the PECVD
Reactor System 100 of FIG. 1A. The germanosilicate glass layer 200
as formed is indicated by cross hatching.
[0042] Referring now to FIG. 2B, the layer of germanosilicate glass
200 is thermally treated in steam, for example in the annealing
system 130' of FIG. 1C, to remove germanium from the
germanosilicate glass and thereby raise the reflow temperature of
the germanosilicate glass so treated. The germanosilicate glass
200' with germanium removed is indicated by oblique hatching in
FIG. 2B. As shown in FIG. 2B, the germanosilicate glass layer 200'
is also planarized during the thermal treatment of FIG. 2B.
[0043] FIGS. 3A-3C illustrate an alternative embodiment wherein a
layer of germanosilicate glass 200 is formed on a substrate 120 in
FIG. 3A, similar to FIG. 2A. In FIG. 3B, the layer germanosilicate
glass is thermally pretreated in at least one of a noble gas and
nitrogen gas, for example using the annealing system 130 of FIG.
1B, to partially planarize the nonplanar layer of germanosilicate
glass 200. The partially planarized layer of germanosilicate glass
is indicated by 200". Since the composition has not changed from
that of FIG. 3A, cross hatching is used. Then, referring to FIG.
3C, the partially planarized layer 200" of germanosilicate glass is
thermally treated in steam, for example using the annealing furnace
130' of FIG. 1C, to remove germanium from the partially planarized
germanosilicate glass and to fully planarize the partially
planarized layer of germanosilicate glass.
[0044] Yet another alternative is illustrated in FIGS. 4A-4C. In
FIG. 4A, a layer of germanosilicate glass is formed on a substrate
as was illustrated in FIGS. 2A and 3A. In FIG. 4B, the layer of
germanosilicate glass is thermally pretreated in at least one of a
noble gas and nitrogen gas to reflow the non-planar layer of
germanosilicate glass and fully planarize the nonplanar layer of
germanosilicate glass. The fully planarized layer is indicated by
reference numeral 200'". Then in FIG. 4C, thermal treatment in
steam is performed to remove germanium from the fully planarized
germanosilicate glass 200'" and thereby raise the reflow
temperature of the germanosilicate glass 200' so treated.
[0045] Referring now to FIGS. 5A-5D, methods of forming integrated
circuits including multiple layers of germanosilicate glass and
integrated circuits so formed according to the invention will now
be described. Referring now to FIG. 5A, a microelectronic substrate
120 including trenches 502 therein, is formed using conventional
trench forming techniques. Then, as shown in FIG. 5A, a first layer
of germanosilicate glass 200a is formed on the microelectronic
substrate 120 including in the trenches 502, for example using a
PECVD Reactor System 100 of FIG. 1A. As shown in FIG. 5A, the first
germanosilicate glass layer 200a is nonplanar.
[0046] Then, referring to FIG. 5B, the first layer 200a of
germanosilicate glass is optionally thermally pretreated in noble
gas and/or nitrogen gas and thermally treated in steam to reflow
the first layer of germanosilicate glass 200a and form a layer of
germanosilicate glass 200a' in the trenches. Any of the methods of
FIGS. 2A-2B, 3A-3C or 4A-4C may be used.
[0047] Preferably, the amount of germanosilicate glass that is
deposited in the first layer 200a is controlled so that when the
first layer 200a is reflowed to form the reflowed layer 200a' in
the trenches, the germanosilicate glass that reflows into the
trenches completely fills the trenches without excess. Accordingly,
etching or chemical mechanical polishing of the substrate may not
need to be used. It will also be understood that in calculating the
amount of the first layer of germanosilicate glass 200a to be
deposited, the shrinkage of the germanosilicate glass should be
accounted for that results from the removal of germanium from the
germanosilicate glass to thereby raise the reflow temperature of
the germanosilicate glass.
[0048] Referring now to FIG. 5C, microelectronic devices such field
effect transistors 504 may be formed in the substrate 120 between
the germanosilicate glass-filled trenches 200a' using conventional
techniques. As also shown in FIG. 5C, a second layer of
germanosilicate glass is then formed on the substrate and is
thermally pre-treated and/or thermally treated as was described in
FIGS. 2A-2B, 3A-3C or 4A-4C to produce a second treated
germanosilicate glass layer 200b'. Additional microelectronic
structures such as conductive lines 506, commonly referred to as
first level metalization, may then be formed on second
germanosilicate glass layer 200b' using conventional techniques. A
third germanosilicate glass layer is then deposited and thermally
pre-treated and/or treated to form a third treated germanosilicate
glass layer 200c'.
[0049] Still continuing with the description of FIG. 5C, a second
layer of microelectronic structures such as a second layer of
conductive lines 508 may then be formed on the second
germanosilicate glass layer 200c'. A third layer of germanosilicate
glass 200d is then formed on the second layer 200c' and on the
second conductive layer 508. As shown during this intermediate
fabrication step, the trench filled with germanosilicate glass
layer 200a' and the first and second germanosilicate glass layers
200b' and 200c' are indicated by oblique shading to indicate that
germanium has been removed to thereby raise the reflow temperature
of the germanosilicate glass so treated. In contrast, in the
intermediate product of FIG. 5C, the third layer of germanosilicate
glass 200d has not yet been thermally treated so that it has a
lower reflow temperature than all the preceding layers of
germanosilicate glass 200a', 200b' and 200c'. Thus, during the
reflow of the third germanosilicate glass layer 200d, the first and
second layers of germanosilicate glass 200b' and 200c' and the
layer of germanosilicate glass in the trenches 200a' are not
disturbed. Stated differently, the third layer of germanosilicate
glass comprises a higher mole percentage of germanium dioxide
compared to the underlying layers of germanosilicate glass.
[0050] Referring now to FIG. 5D, the third layer of germanosilicate
glass 200d is then thermally pretreated and/or thermally treated to
form a planarized third layer 200d' with germanium removed. An
outermost conductive layer 510 is then formed and an outer capping
layer of germanosilicate glass 200e' is deposited and thermally
pre-treated and/or thermally treated. Thus, germanosilicate glass
is used to fill trenches 200a', for interlayer dielectric layers
200b'-200d' and as a capping layer 200e'.
[0051] Accordingly, as shown in FIGS. 5A-5D, a plurality of
germanosilicate glass layers are formed on a substrate by
repeatedly forming and thermally pretreating and/or treating a
layer of germanosilicate glass to create a hierarchy of thermally
treated germanosilicate glass layers on the substrate, wherein each
thermally treated germanosilicate glass layer has higher reflow
temperature than the corresponding layer of germanosilicate glass
as formed. Different interlayer dielectric materials need not be
used in order to provide a proper reflow hierarchy that will not
reflow an underlying layer during subsequent reflow of an overlying
layer. Rather, the same material may be used for all of the
interlayer dielectric layers and thermally processed to raise the
reflow temperature.
[0052] In order to simplify process conditions, each of the forming
and thermally pretreating and/or treating steps may be performed
under the same process conditions. Alternatively, however, at least
two of the repeated thermally treating steps may be performed under
differing thermal conditions. At least two of the forming and
pretreating steps may also be performed under differing deposition
and/or thermal conditions. Also, the trenches may be filled with
germanosilicate glass of the same composition as are other
germanosilicate glass layers. Different processing conditions may
be provided to provide improved characteristics. Finally, the
capping layer 200e' may also be formed of the same material using
the same thermal conditions.
[0053] Still referring to FIG. 5D and viewed from a structural
standpoint, microelectronic structures according to the invention
include the microelectronic substrate 120 and the plurality of
layers of germanosilicate glass 200a'-200d' on the microelectronic
substrate. The layers of germanosilicate glass preferably comprise
the same mole percentage germanium dioxide in the deposited state.
The trenches are also preferably filled with a layer of
germanosilicate glass 200a' which may comprise the same mole
percentage as the plurality of layers of germanosilicate glass
200a'-200d'. A capping layer 200e' is also included on the
outermost conductive layer 510. The capping layer 200e' may also
comprise germanosilicate glass of the same mole percentage
germanium dioxide. Accordingly, one material system may be used for
many functions in fabricating integrated circuits, thereby reducing
process complexity and allowing an increase in reliability. The
same process conditions may be used for all the layers to provide
additional simplicity and reliability.
[0054] It will also be understood that although FIGS. 2A-5D have
been described with respect to undoped germanosilicate glasses,
germanosilicate glasses doped with boron and/or phosphorous and/or
other dopants may be used to further lower the reflow temperature
and provide compatibility with low temperature fabrication of
integrated circuits. Accordingly, doped or undoped germanosilicate
glass layers may be used for many purposes in microelectronic
devices, including but not limited to interlayer dielectrics,
capacitor dielectrics, gate dielectrics, isolation regions and
capping layers.
[0055] Other germanium-containing glass systems also may be used
for these or other integrated circuit applications. For example,
germanostannate (GeO.sub.2+SnO.sub.2) and or germanotitanate
(GeO.sub.2+TiO.sub.2) glass systems may be used for integrated
circuit capacitor applications. In each of these systems, the oxide
other than germanium dioxide possesses a higher dielectric constant
than germanium dioxide, at least in crystalline form. For example,
the static dielectric constant for tin oxide parallel to the c-axis
of the material is 14, while the dielectric constant perpendicular
to the c-axis is 9.9. For titanium dioxide, the dielectric constant
parallel to the c-axis of the material is 89, and the static
dielectric constant perpendicular to the c-axis is 173. Moreover,
both of these materials have a crystalline-phase diagram that shows
a region of solid solution with germanium dioxide. See FIGS. 6A and
6B respectively. FIG. 6A is reproduced from Levin et al., "Phase
Diagrams for Ceramists", Vol. I, p. 141, The American Chemical
Society, 1964. FIG. 6B is reproduced from Levin et al., "Phase
Diagrams for Ceramists", Vol. III, p. 165, The American Chemical
Society, 1975.
[0056] For tin oxide, there appears to be complete miscibility with
germanium dioxide. In contrast, titanium dioxide shows miscibility
gaps below about 5 mole percent and above about 80 mole percent
titanium dioxide. A glass-phase diagram may or may not show the
same miscibility gaps. If the system does show these miscibility
gaps, then these regions should be avoided after the thermal
treatments.
[0057] As described above, for interlayer dielectric layers, it may
be desirable to provide reduced dielectric constant and capacitance
in order to reduce delays associated with signal propagation along
conductive lines between the interlayer dielectric layers. However,
for integrated circuit capacitor applications, high capacitance is
generally desired. In capacitor applications, more capacitance can
be achieved in the same area if a higher dielectric constant
material is used.
[0058] FIGS. 7A-7C illustrate fabrication of trench capacitors
according to the present invention. As shown in FIG. 7A, a trench
730 is formed in a substrate 720. A conformal layer 740 comprising
germanostannate and/or germanotitanate glass is codeposited, for
example as described above with respect to germanosilicate glass.
The layer 740 is then thermally pretreated and/or thermally treated
in order to provide reflow if desired and also to remove at least
some of the germanium dioxide and improve the electrical
characteristics of the remaining material. The layer 740 is then
patterned as shown in FIG. 7A, to thereby provide a lining of a
deep trench capacitor. It will be understood that patterning may
also take place before the thermal pretreatment and/or thermal
treatment.
[0059] Referring now to FIG. 7B, the trench is then filled with a
second electrode material such as doped polysilicon 750. A layer of
germanosilicate glass 760 is then formed and thermally pretreated
and/or treated to provide reflow, to remove germanium dioxide and
to improve the electrical characteristics as described above. The
layer of germanosilicate glass is then patterned. It will be
understood that patterning may also take place before the thermal
pretreatment and/or thermal treatment.
[0060] Then, referring to FIG. 7C, contacts such as aluminum
contacts 780 are then formed to complete the trench capacitor
structure. Conventional deposition and patterning techniques may be
used.
[0061] FIGS. 8A-8C illustrate fabrication of surface capacitors
according to the present invention. As shown in FIG. 8A, a layer
840 comprising germanostannate and/or germanotitanate glass is
formed on the surface of a substrate 820, thermally pretreated
and/or treated and patterned. An insulating layer 860 comprising
germanosilicate glass is then deposited and thermally pretreated
and/or treated and patterned as shown in FIG. 8B. Contacts such as
aluminum contacts 880 are then deposited and patterned as shown in
FIG. 8C.
[0062] Quantitative results for pretreating and treating
germanosilicate glass according to the invention will now be
described. It will be understood that the following quantitative
results are illustrative and shall not be construed as limiting the
present invention. All percentages are given in mole percent.
[0063] Table 1 illustrates the step of thermally pretreating a
layer of germanosilicate glass in argon. Times and temperatures are
indicated in Table 1. It will be understood that the measurements
indicated may be accurate within about .+-.3%. The following
abbreviations are used:
1 TABLE 1 Solid Phase GeO.sub.2 Temp. 100% 90% 80% 60% 50% 40% 20%
600.degree. C. -- -- -- -- -- -- -- 650.degree. C. MF (1 hr) -- --
-- -- -- -- LF C (12 hrs) 700.degree. C. MF (1 hr) MF (1 hr) -- --
-- -- -- LF C (12 hrs) LF C (12 hrs) 750.degree. C. LF C (1 hr) HF
(1 hr) MF (1 hr) NF (1 hr) -- -- -- LF C (12 hrs) Planar (6 hr) NF
(12 hr) Planar (12 hr) 800.degree. C. -- LF C (1 hr) HR (1 hr) NF
(1 hr) NF (1 hr) NF (1 hr) NF (1 hr) Planar (3 hr) NF (12 hr) NF
(12 hr) NF (12 hr) NF (12 hr) 850.degree. C. -- MF C (1 hr) Planar
(1 hr) NF (1 hr) NF (1 hr) NF (1 hr) NF (1 hr) Planar (12 hr) MF
(12 hr) NF (12 hr) NF (12 hr) NF (12 hr) 900.degree. C. -- --
Planar (1 hr) LF (1 hr) NF (1 hr) NF (1 hr) NF (1 hr) Planar (12
hr) HF (12 hr) NF (12 hr) NF (12 hr) NF (12 hr) 950.degree. C. --
-- Planar (1 hr) MF (1 hr) NF (1 hr) NF (1 hr) NF (1 hr) Planar (12
hr) LF (12 hr) NF (12 hr) NF (12 hr) 1000.degree. C. -- -- Planar
(1 hr) HF (1 hr) MF (1 hr) NF (1 hr) NF (1 hr) Planar (12 hr)
.about.Planar MF (12 hr) NF (12 hr) NF (12 hr) (12 hr) 1050.degree.
C. -- -- Planar (1 hr) Planar (1 hr) MF (1 hr) LF (1 hr) NF (1 hr)
Planar (12 hr) Planar HF (12 hr) LF (12 hr) NF (12 hr) (12 hr) NF
No Flow LF Low Flow MF Moderate Flow HF Heavy Flow C
Crystalline
[0064] As shown in Table 1, 100% germanium dioxide layers flowed at
650.degree. C. and at 700.degree. C. within one hour when
pretreated in an argon ambient atmosphere. The layer showed an
undesirable crystalline phase when treated for 12 hours at the same
temperatures. Layers showed a crystalline phase when treated for
one hour at 750.degree. C. These results show that it is
undesirable to use 100% germanium dioxide layers.
[0065] The 90% germanium dioxide layers also flowed at 700.degree.
C. and at 750.degree. C. within one hour. These layers also showed
a crystalline phase when treated for 12 hours at the same
temperatures. These layers also showed a crystalline phase when
treated for one hour at 800.degree. C. Accordingly, these results
show that 90% GeO.sub.2 layers are also undesirable.
[0066] At the right side of Table 1, for 50% or less germanium
dioxide, planarization did not take place for pretreatment between
800.degree. C. and 1050.degree. C. and for times up to 12 hours.
Accordingly, these layers did not appear to reflow and are
therefore undesirable for microelectronic fabrication.
[0067] The 60% germanium dioxide layer was planarized when
thermally pre-treated in argon at 1000.degree. C. for 12 hours and
at 1050.degree. C. for one hour. Although planarization was
obtained, these temperatures are generally far too high for present
day microelectronic fabrication processes. Accordingly, Table 1
illustrates that preferred layers of germanosilicate glass have
mole percentages of germanium dioxide of between about 60% and
about 85%.
[0068] Still referring to Table 1, 80% germanium dioxide is most
preferred. As shown under the 80% column, which actually
corresponds to a mole percentage of between about 77% and about
83%, planarization may be obtained at temperatures as low as
750.degree. C. for planarization times of six hours. When the
temperature is increased to 800.degree. C., planarization may be
obtained in three hours and when the temperature is increased to
850.degree. C. planarization may be obtained in one hour. It will
be understood that doped germanosilicate glass layers may obtain
planarization at correspondingly lower temperatures. The 80%
GeO.sub.2 samples did not exhibit signs of a crystalline phase. It
is also possible to completely planarize the 80% GeO.sub.2 samples
at 800.degree. C. within three hours in argon, nitrogen and helium
ambient atmospheres. The samples thermally treated in helium,
nitrogen or other noble gases can yield comparable results to argon
thermally treated samples.
[0069] Table 2 compares the results of thermal treatments using
steam (S) according to the present invention compared to thermal
treatments using forming gas (FG) comprising 8.9% hydrogen in 91.1%
nitrogen. An argon thermal pretreatment was not performed prior to
the steam or forming gas treatment.
2 TABLE 2 Solid Phase GeO.sub.2 Temp. 100% 90% 80% 60% 50% 40% 20%
750.degree. C. HF(1 hr)S MF(1 hr)S NF(1 hr)S NF(1 hr)S NF(1 hr)S
NF(1 hr)S HF(12 hr)S -- Planar(12 hr)S NF(12 hr)S NF(12 hr)S NF(12
hr)S NF(12 hr)S LF(1 hr)FG -- HF(1 hr)FG NF(1 hr)FG NF(1 hr)FG NF(1
hr)FG NF(1 hr)FG HF(12 hr)FG NF(12 hr)FG NF(12 hr)FG NF(12 hr)FG
NF(12 hr)FG 800.degree. C. -- -- Planar(1 hr)S MF(1 hr)S NF(1 hr)S
NF (1 hr) S NF (1 hr)S -- Planar(12 hr)S HF(12 hr)S NF(12 hr)S
NF(12 hr)S NF(12 hr)S Blowholes(1 hr) .about.Planar NF(1 hr)FG NF(1
hr)FG NF(1 hr)FG FG (rough) NF(1 hr)FG NF(12 hr)FG NF(12 2hr)FG
Blowholes (12 hr) (1 hr)FG FG .about.Planar (rough) (12 hr)FG
[0070] Table 2 shows that approximately planar results were
obtained in forming gas of 800.degree. C. for at least one hour
although the surface of the films were rough and/or contained
blowholes. However, at 80% GeO.sub.2, planarization was obtained
using a steam thermal treatment in 12 hours at 750.degree. C. and
in one hour at 800.degree. C. Roughness and/or blowholes were not
found, so that the film is planar. In contrast, forming gas did not
appear to be effective at these temperatures, compared to
steam.
[0071] It has also been found that the steam treated
germanosilicate glass is water insoluble over a wide range of
composition variations, for example for compositions that include
up to 80% germanium dioxide as deposited. Moreover, in contrast
with forming gas treatment which may cause planarized
germanosilicate glass to have a rough surface that includes
blowholes, steam treated germanosilicate glass may exhibit a smooth
surface that is free of blowholes. Finally, although the
as-deposited germanosilicate glass may have high leakage current,
after the steam anneal low leakage current may be present.
Pretreatment followed by steam anneal further reduced leakage
currents.
[0072] The results of Tables 1 and 2 are for undoped
germanosilicate glass. The following tables illustrate results for
doped germanosilicate glass. For the following tables, the Si and
Ge concentrations are presented in the gas and solid phase mole
percent. The gas phase concentrations are 50% GeH.sub.4 and 50%
SiH.sub.4 relative to each other. Depending on the initial dopant
mole percent the mole percent of the GeH.sub.4 and SiH.sub.4 in the
gas may vary. The dopant concentrations (i.e., PH.sub.3 and
BH.sub.3) are also presented in the gas phase mole percent relative
to the total. In the body of Table 3, compositions are in the solid
phase.
[0073] The films in Table 3 were subject to argon thermal
pretreatment. Energy Dispersive X-Ray Spectroscopy (EDS) is used to
determine the solid phase composition of doped germanosilicate
samples containing only phosphorus. Auger Energy Spectroscopy (AES)
is used to determine the solid phase composition of doped
germanosilicate samples containing either boron or the mixture of
boron and phosphorus.
3 TABLE 3 Gas Phase (mole %) (mole %) (mole %) (mole %) (mole %)
(mole %) 23% PH.sub.3 5.6% PH.sub.3 23% BH.sub.3 5.6% BH.sub.3
11.5% PH.sub.3 + 11.5% BH.sub.3 2.8% PH.sub.3 + 2.8% BH.sub.3 38.5%
SiH.sub.4 47.2% SiH.sub.4 38.5% SiH.sub.4 47.2% SiH.sub.4 38.5%
SiH.sub.4 47.2% SiH.sub.4 Temp 38.5% GeH.sub.4 47.2% GeH.sub.4
38.5% GeH.sub.4 47.2% GeH.sub.4 38.5% GeH.sub.4 47.2% GeH.sub.4
As-deposited SiO.sub.2: 22 m/o SiO.sub.2: 38 m/o SiO.sub.2: 60 m/o
SiO.sub.2: 56 m/o SiO.sub.2: 41 m/o SiO.sub.2: 46 m/o GeO.sub.2: 34
m/o GeO.sub.2: 48 m/o GeO.sub.2: 38 m/o GeO.sub.2: 41 m/o
GeO.sub.2: 32 m/o GeO.sub.2: 45 m/o PO.sub.2.5: 44 m/o PO.sub.2.5:
14 m/o BO.sub.1 5: 3 m/o BO.sub.1 5: 2 m/o PO.sub.2 5: 21 m/o
PO.sub.2 5: 7 m/o BO.sub.1 5: 4 m/o BO.sub.1 5: 1 m/o 600.degree.
C. NF (1 hr) NF (1 hr) NF (1 hr) NF (1 hr) NF (1 hr) NF (1 hr)
SiO.sub.2: 25 m/o SiO.sub.2: 37 m/o GeO.sub.2: 33 m/o GeO.sub.2: 45
m/o PO.sub.2.5: 42 m/o PO.sub.2.5: 18 m/o 700.degree. C. NF (1 hr)
NF (1 hr) NF (1 hr) NF (1 hr) LF (1 hr) MF (1 hr) SiO.sub.2: 27 m/o
SiO.sub.2: 42 m/o GeO.sub.2: 32 m/o GeO.sub.2: 44 m/o PO.sub.2.5:
40 m/o PO.sub.2 5: 14 m/o 800.degree. C. MF (1 hr) .about.Planar LF
(1 hr) NF (1 hr) Planar (1 hr) Planar (1 hr) SiO.sub.2: 22 m/o (1
hr) Bulk Bulk Bulk GeO.sub.2: 32 m/o SiO.sub.2: 42 m/o SiO.sub.2:
53 m/o SiO.sub.2: 45 m/o SiO.sub.2: 47 m/o PO.sub.2 5: 46 m/o
GeO.sub.2: 47 m/o GeO.sub.2: 44 m/o GeO.sub.2: 32 m/o GeO.sub.2: 34
m/o PO.sub.2.5: 11 m/o BO.sub.1 5: 3 m/o PO.sub.5: 20 m/o PO.sub.2
5: 6 m/o BO.sub.1 5: 3 m/o BO.sub.1 5: 1 m/o
[0074] Table 4 illustrates results for a steam thermal anneal. In
Table 4, the Si and Ge concentrations are presented in the gas
phase. The gas phase concentrations are 50% GeH.sub.4 and 50%
SiH.sub.4 relative to each other. Depending on the initial dopant
mole percent the mole percent of the GeH.sub.4 and SiH.sub.4 in the
gas may vary. The dopant concentrations (i.e., PH.sub.3 and
BH.sub.3) are also presented in the gas phase in mole percent. In
the body of Table 4, compositions are in the solid phase.
[0075] Energy Dispersive X-Ray Spectroscopy (EDS) is used to
determine the solid phase composition of undoped and doped
germanosilicate samples containing only phosphorus as a dopant.
This technique may be used for detecting elements with an atomic
number greater than four from an excited specimen volume. Although
both boron and phosphorus have atomic numbers greater than four
(i.e., 5 and 15 respectively), the current EDS system was unable to
detect boron. Phosphorus is detected by the EDS system.
[0076] At its basic level, EDS involves the generation of
characteristic x-rays due to electron bombardment. The intensity of
the characteristic x-rays can be analyzed to determine the relative
concentration of elements from an excited specimen volume. Since
these characteristic x-rays are generated over a substantial
fraction of the interaction volume formed by the electrons
scattering in the solid, the technique may be described as a method
for determining the concentrations of elements over an average
excited volume. For the present analysis, the electron incident
energy is 5 KeV corresponding to an electron penetration depth of
approximately 3000 .ANG. in germanosilicate glass films.
[0077] Auger Energy Spectroscopy (AES) is used to determine the
solid phase composition of doped germanosilicate samples containing
either boron or the mixture of boron and phosphorus. AES is an
electron energy spectroscopy that probes the electronic energy
levels of atoms using electron beam stimulation. An electron beam,
with energy E.sub.0, irradiating a sample causes electron
emissions, which can be energy analyzed to determine concentrations
of elements. The electrons are typically generated from the first
50 .ANG. to 100 .ANG. from the surface. Thus, AES may be described
as a surface technique.
[0078] Film depth concentration profiling by AES is used to
identify possible concentration gradients in the doped
germanosilicate glasses after various thermal treatments in steam.
Steam treated doped and undoped germanosilicate films exhibit a
concentration gradient e.g., low-to-high concentration of
germanium, boron and phosphorus, from the surface to approximately
3000 .ANG. into the bulk of the film. The film concentration then
approximates the concentrations of the as deposited germanosilicate
film. Accordingly, both surface and bulk solid phase concentrations
are provided in the body of Table 4. The average film thickness is
about 8000 .ANG..
4 TABLE 4 Gas Phase (mole %) (mole %) (mole %) (mole %) (mole %)
(mole %) 23% PH.sub.3 5.6% PH.sub.3 23% BH.sub.3 5.6% BH.sub.3
11.5%PH.sub.3 + 11.5% BH.sub.3 2.8% PH.sub.3 + 2.8% BH.sub.3 38.5%
SiH.sub.4 47.2% SiH.sub.4 38.5% SiH.sub.4 47.2% SiH.sub.4 38.5%
SiH.sub.4 47.2% SiH.sub.4 Temp 38.S% GeH.sub.4 47.2% GeH.sub.4
38.5% GeH.sub.4 47.2% GeH.sub.4 38.5% GeH.sub.4 47.2% GeH.sub.4
As-deposited SiO.sub.2 22 m/o SiO.sub.2 38 m/o SiO.sub.2 60 m/o
SiO.sub.2, 56 m/o SiO.sub.2 41 m/o SiO.sub.2, 46 m/o GeO.sub.2 34
m/o GeO.sub.2 48 m/o GeO.sub.2 38 m/o GeO.sub.2 41 m/o GeO.sub.2 32
m/o GeO.sub.2 45 m/o PO.sub.25: 44 m/o PO.sub.25: 14 m/o BO.sub.15:
3 m/o BO.sub.15: 2 m/o PO.sub.25: 21 m/o BO.sub.25: 7 m/o
BO.sub.15: 4 m/o BO.sub.15: 1 m/o 750.degree. C. MF(1 hr) HF(1 hr)
LF(1 hr) NF(1 hr) Planar(1 hr) .about.Planar(1 hr) Surface Surface
SiO.sub.2 58 m/o SiO.sub.2: 49 m/o SiO.sub.2 55 m/o SiO.sub.2 95
m/o GeO.sub.2 18 m/o GeO.sub.2: 41 m/o GeO.sub.2 4 m/o GeO.sub.2. 3
m/o PO.sub.25. 24 m/o PO.sub.25: 11 m/o PO.sub.25: 40 m/o
PO.sub.25: 2 m/o BO.sub.15: 4 m/o BO.sub.15: 0 m/o Bulk Bulk
SiO.sub.2: 28 m/o SiO.sub.2: 55 m/o GeO.sub.2 56 m/o GeO.sub.2 35
m/o PO.sub.25. 13 m/o PO.sub.25: 8 m/o BO.sub.133 m/o BO.sub.152
m/o 800.degree. C. MF(1 hr) Planar(1 hr) HF(1 hr) NF(1 hr) Planar(1
hr) Surface SiO.sub.2: 83 m/o SiO.sub.2. 58 m/o SiO.sub.2: 9 m/o
GeO.sub.2. 13 m/o GeO.sub.2 33 m/o GeO.sub.2: 7 m/o PO.sub.25: 4
m/o PO.sub.25. 9 m/o -- PO.sub.25: 0 m/o BO.sub.25: 0 m/o Bulk
SiO.sub.2: 40 m/o GeO.sub.2: 47 m/o PO.sub.25. 12 m/o BO.sub.15: 1
m/o
[0079] Thus, for equal amounts of silane and germane in the gas
phase, planarization was obtained using phosphorous and boron
doping at 750.degree. C. after one hour, and at 800.degree. C.
using only phosphorous. This contrasts sharply with Tables 1 and 2
where planarization was not obtained for 50% GeH.sub.4
germanosilicate glass at 1050.degree. C. Accordingly, the reflow
temperature is reduced considerably by introducing boron and/or
phosphorous dopants.
[0080] Table 5 illustrates the reflow effect of dopants on 80%
germanium dioxide germanosilicate glass. In Table 5, the silicon
and germanium concentrations of 80% GeH.sub.4 and 20% SiH.sub.4 are
represented in the gas phase. The dopant concentrations of PH.sub.3
and BH.sub.3 are also represented in the gas phase relative to the
total composition.
[0081] Table 5 clearly indicates that the minimum reflow
temperature in which the doped germanosilicate glass layers are
planarized is 550.degree. C. These layers were planarized within 12
hours in an argon thermal pretreatment. The corresponding gas phase
composition for the dopants are 11.5% PH.sub.3 and 11.5% BH.sub.3
relative to the total. The same composition is completely planar at
575.degree. C. within three hours in an argon thermal pretreatment.
They are also completely planar in the temperature range
600.degree. C. to 800.degree. C. within one hour in an argon
thermal pretreatment. The 2.3% PH.sub.3 and 2.3% BH.sub.3
composition is also completely planar at 650.degree. C. within
three hours and at 700.degree. C. to 850.degree. C. within one hour
in an argon thermal pretreatment. There are no steam or forming gas
thermal treatments in Table 5. Accordingly, the planarization
temperature has been reduced from about 750.degree. C. to about
550.degree. C. with the addition of boron and phosphorous
dopants.
5 TABLE 5 Gas Phase (mole %) (mole %) (mole %) (mole %) (mole %)
(mole %) 23% PH.sub.3 5.6% PH.sub.3 23% BH.sub.3 5.6% BH.sub.3
11.5% PH.sub.3 + 11.5% BH.sub.3 2.8% PH.sub.3 + 2.8% BH.sub.3 15%
SiH.sub.4 19% SiH.sub.4 15% SiH.sub.4 19% SiH.sub.4 15% SiH.sub.4
19% SiH.sub.4 Temp 62% GeH.sub.4 75.4% GeH.sub.4 62% GeH.sub.4
75.4% GeH.sub.4 62% GeH.sub.4 75.4% GeH.sub.4 As-deposited
SiO.sub.2: 9 m/o SiO.sub.2: 13 m/o SiO.sub.2: 19 m/o SiO.sub.2: 25
m/o SiO.sub.2: 14 m/o SiO.sub.2: 16 m/o GeO.sub.2: 66 m/o
GeO.sub.2: 74 m/o GeO.sub.2: 78 m/o GeO.sub.2: 73 m/o GeO.sub.2: 73
m/o GeO.sub.2: 77 m/o PO.sub.2 5: 25 m/o PO.sub.2.5: 14 m/o
BO.sub.1 5: 3 m/o BO.sub.1 5: 2 m/o PO.sub.2.5: 12 m/o PO.sub.2.5:
6 m/o BO.sub.1 5: 1 m/o BO.sub.1 5: 0 m/o 550.degree. C. -- -- --
-- NF (1 hr) -- HF (12 hr) .9 um Planar (12 hr) .5 um 575.degree.
C. -- -- -- -- HF (1 hr) -- Planar (3 hr) 600.degree. C. LF (1 hr)
NF (1 hr) NF (1 hr) NF (1 hr) Planar (1 hr) NF (1 hr) SiO.sub.2: 11
m/o SiO.sub.2: 17 m/o Bulk GeO.sub.2: 66 m/o GeO.sub.2: 69 m/o
SiO.sub.2: 13 m/o PO.sub.2 5: 24 m/o PO.sub.2 5: 14 m/o GeO.sub.2:
75 m/o PO.sub.2 5: 10 m/o BO.sub.1 5: 2 m/o 625.degree. C. -- -- --
-- -- MF (1 hr) HF (12 hr) 650.degree. C. -- -- -- -- Planar (1 hr)
HF (1 hr) Planar (3 hr) 700.degree. C. MF (1 hr) MF (1 hr) HF (1
hr) MF (1 hr) Planar (1 hr) Planar (1 hr) SiO.sub.2: 14 m/o
SiO.sub.2: 14 m/o Bulk Bulk GeO.sub.2: 60 m/o GeO.sub.2: 72 m/o
SiO.sub.2: 24 m/o SiO.sub.2: 24 m/o PO.sub.2 5: 26 m/o PO.sub.2.5:
14 m/o GeO.sub.2: 63 m/o GeO.sub.2: 67 m/o PO.sub.2 5: 10 m/o
PO.sub.2 5: 8 m/o BO.sub.1 5: 3 m/o BO.sub.1 5: 0 m/o 800.degree.
C. C (1 hr) .about.Planar (1 hr) Planar (1 hr) .about.Planar (1 hr)
Planar (1 hr) Planar (1 hr) SiO.sub.2: 8 m/o SiO.sub.2: 12 m/o Bulk
Bulk GeO.sub.2: 52 m/o GeO.sub.2: 65 m/o SiO.sub.2: 23 m/o
SiO.sub.2: 21 m/o PO.sub.2 5: 40 m/o PO.sub.2 5: 23 m/o GeO.sub.2:
76 m/o GeO.sub.2: 76 m/o BO.sub.1 5: 1 m/o BO.sub.1 5: 2 m/o
[0082] Table 6 illustrates a two step method in which doped and
undoped germanosilicate glass films are planarized by a thermal
pretreatment in a noble gas, and then germanium, boron and
phosphorus are partially removed from the glass films by thermal
treatment in steam without jeopardizing the integrity of the
planarized films. More specifically, the two step method planarizes
the as-deposited films in a noble gas, i.e., in argon or helium,
then thermally treats the films in steam to partially remove
germanium, boron, and phosphorus.
6 TABLE 6 Gas Phase (mole %) (mole %) (mole %) Undoped 11.5%
PH.sub.3 + 11.5% BH.sub.3 11.5% PH.sub.3 + 11.5% BH.sub.3 20%
SiH.sub.4 38.5% SiH.sub.4 15% SiH.sub.4 Temp 80% GeH.sub.4 38.5%
GeH.sub.4 62% GeH.sub.4 As-deposited SiO.sub.2: 17 m/o SiO.sub.2:
41 m/o SiO.sub.2: 14 m/o GeO.sub.2: 83 m/o GeO.sub.2: 32 m/o
GeO.sub.2: 73 m/o PO.sub.2 5: 21 m/o PO.sub.2 5: 12 m/o BO.sub.1 5:
4 m/o BO.sub.1 5: 1 m/o First Step -- -- Planar (1 hr) Argon
600.degree. C. Surface SiO.sub.2: 10 m/o GeO.sub.2: 65 m/o
PO.sub.2.5: 23 m/o BO.sub.1 5: 2 m/o Bulk SiO.sub.2: 11 m/o
GeO.sub.2: 67 m/o PO.sub.2 5: 18 m/o BO.sub.1 5: 4 m/o First Step
Planar (1 hr) Helium Planar (1 hr) Argon -- 800.degree. C. (EDS)
Surface SiO.sub.2: 17 m/o SiO.sub.2: 66 m/o GeO.sub.2: 83 m/o
GeO.sub.2: 24 m/o PO.sub.2.5: 8 m/o BO.sub.1 5: 2 m/o Bulk
SiO.sub.2: 45 m/o GeO.sub.2: 32 m/o PO.sub.2.5: 20 m/o BO.sub.1 5:
3 m/o Second Step Planar (1 hr) Planar (1 hr) Planar (1 hr)
750.degree. C. (EDS) Surface Surface Steam SiO.sub.2: 21 m/o
SiO.sub.2: 61 m/o SiO.sub.2: 58 m/o Only GeO.sub.2: 79 m/o
GeO.sub.2: 25 m/o GeO.sub.2: 37 m/o (AES) PO.sub.2 5: 13 m/o
PO.sub.2 5: 4 m/o Surface BO.sub.1 5: 1 m/o BO.sub.1 5: 1 m/o
SiO.sub.2: 35 m/o Bulk Bulk GeO.sub.2: 65 m/o SiO.sub.2: 55 m/o
SiO.sub.2: 44 m/o Bulk GeO.sub.2: 35 m/o GeO.sub.2: 48 m/o
SiO.sub.2: 24 m/o PO.sub.2 5: 10 m/o PO.sub.2 5: 15 m/o GeO.sub.2:
76 m/o BO.sub.1 5: 0 m/o BO.sub.1 5: 3 m/o
[0083] The first process, corresponding to the first column of
Table 6, involves planarizing an undoped 80%GeO.sub.2 glass film in
helium at 800.degree. C. for 1 hour (first step). There is no
concentration gradient of either the as-deposited film or the
helium thermally treated sample. After thermally treating the film
in steam for 1 hour at 750.degree. C. (second step) approximately
14% of the GeO.sub.2 is lost, thus raising the temperature by which
the film can be planarized to greater than 1000.degree. C. It has
also been shown that after steam thermal treatment at 750.degree.
C., the film is insoluble in water. EDS was used to characterize
the film before steam thermal treatment and EDS and AES were used
to characterize the steam treated sample.
[0084] The next process, corresponding to the second column of
Table 6, involves planarizing a doped germanosilicate glass film in
argon at 800.degree. C. for 1 hour (first step) then thermally
treating the film in steam for 1 hour at 750.degree. C. (second
step). There is no noticeable change in the GeO.sub.2 concentration
after steam thermal treatment. However there is a complete loss of
boron after the steam thermal treatment. Although there is no
apparent loss of GeO.sub.2 after the steam thermal treatment, it is
possible that the reflow temperature of the film is increased due
to the loss of boron. The film has been shown to be insoluble in
water after a steam thermal treatment at 750.degree. C. for 1
hour.
[0085] The final process, corresponding to the third column of
Table 6, involves planarizing a doped germanosilicate glass film in
argon at 600.degree. C. for 1 hour (first step) then thermally
treating the film in steam for 1 hour at 750.degree. C. (second
step). There is no concentration gradient observed in either the
as-deposited film or the argon thermally treated sample. After
thermally treating the film in steam for 1 hour at 750.degree. C.
approximately 43% of the GeO.sub.2 is lost, while the boron and
phosphorus are completely lost. Thus, the temperature at which the
film can be reflowed is greatly increased.
[0086] The above data shows that when boron is used to dope the
germanosilicate glass, the boron-doped germanosilicate glass
preferably has a mole percentage of germanium dioxide of between
about 40% and about 85% relative to the silicon dioxide which
encompasses reflow and crystallization boundaries, respectively,
and a mole percentage of boron as BO.sub.1 5 of between about 1%
and about 4% relative to the total borogermanosilicate glass
(GeO.sub.2+SiO.sub.2+BO.sub.1.5). More preferably, the layer of
boron-doped germanosilicable glass has a mole percentage of
germanium dioxide of between about 77% and about 83% relative to
the silicon dioxide and mole percentage of boron of about 3 percent
relative to the total borogermanosilicate glass
(GeO.sub.2+SiO.sub.2+BO.sub.1.5).
[0087] The above data also shows that when phosphorus is used to
dope the germanosilicate glass, the phosphorous doped
germanosilicate glass preferably has mole percentage of germanium
dioxide of between about 60% and about 85% relative to silicon
dioxide and mole percentages of phosphorous as PO.sub.2.5 of
between about 14% and about 44% relative to the total
phosphogermanosilicate glass (GeO.sub.2+SiO.sub.2+PO.sub.2.5). More
preferably, the phosphorous doped germanosilicate glass has mole
percentage of germanium dioxide relative to silicon dioxide of
between about 55% and about 85% and mole percentage of phosphorous
of about 14% of the total phosphogermanosilicate glass
(GeO.sub.2+SiO.sub.2+PO.sub.2.5- ).
[0088] The above data also shows that both boron and phosphorus
preferably are used in combination to dope the germanosilicate
glass. The boron and phosphorus doped germanosilicate glass
preferably has a mole percentage of germanium dioxide of between
about 40% and about 85% relative to the silicon dioxide, a mole
percentage of phosphorus as PO.sub.2.5 of between about 5% and
about 23%, and mole percentage of boron as BO.sub.1.5 of between
about 1% and about 4%, both relative to the total
borophosphogermanosilicate glass
(GeO.sub.2+SiO.sub.2+PO.sub.2.5+BO.sub.1- .5). More preferably, the
layer of boron and phosphorus doped germanosilicate glass has a
mole percentage of germanium dioxide of between about 82% and about
85% relative to silicon dioxide, a mole percentage of phosphorus as
PO.sub.2.5 of between about 11% and about 14% and a mole percentage
of boron as BO.sub.1.5 of between about 1% and 3%, both relative to
the total borophosphogermanosilicate glass
(GeO.sub.2+SiO.sub.2+PO.sub.2.5+BO.sub.1.5).
[0089] Examples of the effect of thermal treatment in steam on a
layer of germanosilicate glass in forming a hierarchy of
germanosilicate glass layers will now be described. The following
examples are merely illustrative and should not be construed as
limiting the invention.
EXAMPLE 1
[0090] This example forms three layers of undoped germanosilicate
glass using thermal treatment in steam. A first layer of
germanosilicate glass comprising 80% germanium dioxide is formed on
a substrate, for example using PECVD at 200.degree. C. Thermal
treatment in steam is performed at 750.degree. C. for twelve hours
to planarize the layer of germanosilicate glass and to also remove
about 15% of the germanium from the germanosilicate glass to
thereby raise the reflow temperature of the germanosilicate glass
so treated to about 950.degree. C. Thus, the thermal treatment in
steam planarizes the layer of germanosilicate glass and also raises
the reflow temperature by about 200.degree. C. The second and third
layers of germanosilicate glass may be formed and thermally treated
at 750.degree. C. for 12 hours without disturbing the underlying
germanosilicate glass layer.
EXAMPLE 2
[0091] In this example, a layer of 80% GeO.sub.2 undoped
germanosilicate glass is formed on a substrate, for example using
PECVD at 200.degree. C. A thermal treatment in steam is performed
at 800.degree. C. for one hour to thereby raise the reflow
temperature of the germanosilicate glass to about 950.degree. C.
and planarize the germanosilicate glass. About 15% of the germanium
dioxide is removed so that the thermally treated germanosilicate
glass includes 65% germanium oxide. The same process may be used to
form and treat second and subsequent layers of germanosilicate
glass without disturbing the underlying layers.
EXAMPLE 3
[0092] Example 3 illustrates methods of forming all layers of
undoped germanosilicate glass using thermal pretreatment in a noble
gas followed by thermal treatment in steam. In particular, a layer
of germanosilicate glass is formed on a substrate, for example by
PECVD at 200.degree. C. A thermal pretreatment is performed in
argon at 850.degree. C. for one hour to reflow the germanosilicate
glass. Then a thermal treatment in steam is performed at
800.degree. C. for one hour to thereby remove about 15% of the
germanium dioxide to provide 65% GeO.sub.2 in the germanosilicate
glass. This raises the reflow temperature to 950.degree. C.
Subsequent germanosilicate glass layers may be formed, reflowed in
a thermal pretreatment and thermally treated in steam under the
process conditions described above without disturbing the
underlying germanosilicate glass layer. It has been found that when
performing the two-step pretreating and treating process, lower
leakage and higher breakdown properties may be obtained compared to
a thermal treatment process alone.
[0093] Accordingly, the present invention can provide planarized
reflow of doped and undoped germanosilicate glasses, the
composition of which can be altered after reflow and the
interfacial stress of which can be modulated and maintained at low
stress levels. Planarization and composition modulation may be
controlled independently. Planar reflow glass structures over
nonplanar topography may therefore be achieved at temperatures as
low as 600.degree. C. or less. Such planarized glasses can exhibit
low stress and low solubility. The same processes and structures
may be used for trench isolation, interlayer dielectrics and
capping layers.
[0094] In the drawings and specification, there have been disclosed
typical preferred embodiments of the invention and, although
specific terms are employed, they are used in a generic and
descriptive sense only and not for purposes of limitation, the
scope of the invention being set forth in the following claims.
* * * * *