U.S. patent application number 09/894117 was filed with the patent office on 2001-11-01 for polishing fluid, polishing method, semiconductor device and semiconductor device fabrication method.
This patent application is currently assigned to Lucent Technologies, Inc.. Invention is credited to Chetlur, Sundar Srinivasaan, Misra, Sudhanshu, Roy, Pradip Kumar, Saxena, Vivek.
Application Number | 20010036796 09/894117 |
Document ID | / |
Family ID | 23921514 |
Filed Date | 2001-11-01 |
United States Patent
Application |
20010036796 |
Kind Code |
A1 |
Misra, Sudhanshu ; et
al. |
November 1, 2001 |
Polishing fluid, polishing method, semiconductor device and
semiconductor device fabrication method
Abstract
A polishing fluid comprising a distributed organic phase and a
continuous aqueous phase, each phase comprising at least one
complexing agent. The aqueous phase also having abrasive particles
dispersed therein. Reaction products generated during polishing
interact with the aqueous phase complexing agent to form water
soluble metallic complexes, the water soluble metallic complexes
diffuse to an organic/water interface where they release complexing
agent molecules in the aqueous phase and generate metal ions which
interact with the organic phase complexing agent to form
organometallic complexes. Further disclosed is a polishing method,
a semiconductor device and semiconductor device fabrication method
utilizing the polishing fluid.
Inventors: |
Misra, Sudhanshu; (Orlando,
FL) ; Roy, Pradip Kumar; (Orlando, FL) ;
Chetlur, Sundar Srinivasaan; (Orlando, FL) ; Saxena,
Vivek; (Orlando, FL) |
Correspondence
Address: |
IP Department
Schnader, Harrison, Segal & Lewis
36th Floor
1600 Market Street
Philadelphia
PA
19103-7286
US
|
Assignee: |
Lucent Technologies, Inc.
|
Family ID: |
23921514 |
Appl. No.: |
09/894117 |
Filed: |
June 28, 2001 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
09894117 |
Jun 28, 2001 |
|
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09483785 |
Jan 14, 2000 |
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Current U.S.
Class: |
451/36 ; 451/41;
451/60 |
Current CPC
Class: |
C09G 1/02 20130101; B24B
37/044 20130101 |
Class at
Publication: |
451/36 ; 451/41;
451/60 |
International
Class: |
B24B 001/00 |
Claims
What is claimed is:
1. A polishing fluid comprising a distributed organic phase and a
continuous aqueous phase, the aqueous phase having at least one
complexing agent and abrasive particles dispersed therein, and the
organic phase having at least one complexing agent, wherein
reaction products generated during polishing interact with the
aqueous phase complexing agent(s) to form water soluble metallic
complexes, the water soluble metallic complexes diffuse to an
organic/water interface where they release complexing agent
molecules in the aqueous phase and interact with the organic phase
complexing agent(s) to form organometallic complexes in the organic
phase.
2. The polishing fluid of claim 1 wherein the aqueous phase
complexing agent is selected from the group consisting of
diethylene-tetra-penta-aci- dic acid, ethylene di-amine tetra
acetic acid and a combination thereof.
3. The polishing fluid of claim 1 wherein the organic phase
complexing agent is selected from the group consisting of
diethylene-triamine-penta-- acidic acid, bipyridine,
orthophenanthroline, 8-hydroxy-quinoline and a combination
thereof.
4. The polishing fluid of claim 1 wherein the aqueous phase further
comprises one or more components selected from the group consisting
of oxidants, surfactants and emulsion stabilizers.
5. The polishing fluid of claim 4 wherein the oxidant is selected
from the group consisting of NH.sub.4OH, NH.sub.4NO.sub.3,
H.sub.2O.sub.2 and a combination thereof.
6. The polishing fluid of claim 4 wherein the emulsion stabilizer
is a sulfonate.
7. The polishing fluid of claim 4 wherein the surfactant is
selected from the group consisting of alkyl, benzyl, lauryl
sulfonates and combinations thereof.
8. The polishing fluid of claim 1 wherein the abrasive particles
are selected from the group consisting of ceria, alumina, silica,
magnesium oxide and combinations thereof.
9. The polishing fluid of claim 1 wherein the ratio of the
distributed phase to the continuous phase is about 2:98 volume
percent to about 50:50 volume percent of the polishing fluid.
10. The polishing fluid of claim 1 wherein the ratio of the
distributed phase to the continuous phase is about 5:95 volume
percent to about 40:60 volume percent of the polishing fluid.
11. The polishing fluid of claim 1 wherein the pH of the polishing
fluid is in a range of about 2 to about 6.
12. The polishing fluid of claim 1 wherein the pH of the polishing
fluid is in a range of about 3 to about 5.
13. The polishing fluid of claim 1 wherein the abrasive particles
comprise about 5 weight percent to about 30 weight percent of the
polishing fluid.
14. The polishing fluid of claim 1 wherein the solids comprise
about 20 weight percent to about 50 weight percent of the polishing
fluid.
15. The polishing fluid of claim 1 wherein the diameter of the
abrasive particles is in the range of about 100 nm to about 1000
nm.
16. The polishing fluid of claim 1 wherein the diameter of the
abrasive particles is in the range of about 200 nm to about 500
nm.
17. The polishing fluid of claim 1 wherein the diameter of the
abrasive particles is in the range of about 300 nm to about 400
nm.
18. A method for polishing a workpiece comprising: introducing a
polishing fluid between the workpiece and a polishing implement;
and effectively moving the polishing implement and the workpiece
relative to one another; wherein the polishing fluid comprises: a
distributed organic phase and a continuous aqueous phase, the
aqueous phase having at least one complexing agent and abrasive
particles dispersed therein, and the organic phase having at least
one complexing agent, wherein reaction products generated during
polishing interact with the aqueous phase complexing agent(s) to
form water soluble metallic complexes, the water soluble metallic
complexes diffuse to an organic/water interface where they release
complexing agent molecules in the aqueous phase and interact with
the organic phase complexing agent to form organometallic complexes
in the organic phase.
19. The polishing method of claim 18 wherein the aqueous phase
complexing agent is selected from the group consisting of
diethylene-tetra-penta-aci- dic acid, ethylene di-amine tetra
acetic acid and a combination thereof.
20. The polishing method of claim 18 wherein the organic phase
complexing agent is selected from the group consisting of
diethylene-triamine-penta-- acidic acid, bipyridine,
orthophenanthroline, 8-hydroxy-quinoline and a combination
thereof.
21. The polishing method of claim 18 wherein the aqueous phase
further comprises one or more components selected from the group
consisting of oxidants, surfactants and emulsion stabilizers.
22. The polishing method of claim 21 wherein the oxidant is
selected from the group consisting of NH.sub.4OH, NH.sub.4NO.sub.3,
H.sub.2O.sub.2 and a combination thereof.
23. The polishing method on claim 21 wherein the emulsion
stabilizer is a sulfonate.
24. The polishing method of claim 18 wherein the abrasive particles
are selected from the group consisting of ceria, alumina, silica
and magnesium oxide.
25. The polishing method of claim 18 further comprising
regenerating the organic phase.
26. The polishing fluid of claim 25 wherein the organic phase is
regenerated by ion exchange.
27. The polishing fluid of claim 25 wherein the organic phase is
regenerated by dissolution in an acidic medium.
28. The polishing method of claim 18 wherein the ratio of the
distributed phase to the continuous phase is about 2:98 volume
percent to about 50:50 volume percent of the polishing fluid.
29. The polishing method of claim 18 wherein the ratio of the
distributed phase to the continuous phase is about 5:95 volume
percent to about 40:60 volume percent of the polishing fluid.
30. The polishing method of claim 18 wherein the pH of the
polishing fluid is in a range of about 2 to about 6.
31. The polishing method of claim 18 wherein the pH of the
polishing fluid is in a range of about 3 to about 5.
32. The polishing method of claim 18 wherein the abrasive particles
comprise about 5 weight percent to about 30 weight percent of the
polishing fluid.
33. The polishing method of claim 18 wherein the solids comprise
about 20 weight percent to about 50 weight percent of the polishing
fluid.
34. The polishing method of claim 18 wherein the diameter of the
abrasive particles is in the range of about 100 nm to about 1000
nm.
35. The polishing method of claim 18 wherein the diameter of the
abrasive particles is in the range of about 200 nm to about 500
nm.
36. The polishing method of claim 18 wherein the diameter of the
abrasive particles is in the range of about 300 nm to about 400
nm.
37. A method for fabricating a semiconductor device, the
semiconductor device comprising one or more layers, the layer(s)
having an integrated circuit disposed therein, wherein the method
comprises polishing a surface of at least one of the layers by:
introducing a polishing fluid between the surface and a polishing
article; and effectively moving the device surface and the
polishing article with respect to one another, wherein the
polishing fluid comprises a distributed organic phase and a
continuous aqueous phase, the aqueous phase having at least one
complexing agent and abrasive particles dispersed therein, and the
organic phase having at least one complexing agent, wherein
reaction products generated during polishing interact with the
aqueous phase complexing agent(s) to form water soluble metallic
complexes, the water soluble metallic complexes diffuse to an
organic/water interface where they release complexing agent
molecules in the aqueous phase and interact with the organic phase
complexing agent(s) to form organometallic complexes in the organic
phase.
38. A semiconductor device comprising one or more layers, the
layer(s) having an integrated circuit disposed therein, wherein a
surface of at least one of the layers is polished by: introducing a
polishing fluid between the surface and a polishing article; and
effectively moving the device surface and the polishing article
with respect to one another, wherein the polishing fluid comprises
a distributed organic phase and a continuous aqueous phase, the
aqueous phase having at least one complexing agent and abrasive
particles dispersed therein, and the organic phase having at least
one complexing agent, wherein reaction products generated during
polishing interact with the aqueous phase complexing agent(s) to
form water soluble metallic complexes, the water soluble metallic
complexes diffuse to an organic/water interface where they release
complexing agent molecules in the aqueous phase and interact with
the organic phase complexing agent(s) to form organometallic
complexes in the organic phase.
Description
FIELD OF THE INVENTION
[0001] The invention relates to semiconductor devices and
fabrication methods, and more particularly to polishing of device
layers.
BACKGROUND OF THE INVENTION
[0002] Surface finishing in many arts may utilize polishing and/or
planarization. As used herein the term "polishing" shall include
polishing and/or planarization. Polishing is of particular
importance in the manufacturing of semiconductor devices. The
concentration of integrated circuit components included on a
semiconductor chip is continually increasing. Concentration may be
increased by decreasing component size. As component size
decreases, surfaces on which components are formed should be
increasingly smooth to produce desired component configurations and
thereby reduce failure rates and increase product yield. Therefore,
the effectiveness of polishing fluids has significant impact on the
quality of integrated circuits produced.
[0003] Semiconductor devices typically comprise multiple layers,
throughout which are incorporated integrated circuits. Integrated
circuit features and components, which may vary in height, are
typically created by lithographic processes on each layer. Height
variations contained on one layer may present themselves on
subsequent layers creating nonplanar layer surfaces. Such surface
irregularities may be problematic in lithographic processes used to
form additional circuit components. Therefore, it is desirable to
perform lithographic processes only on substantially smooth, planar
surfaces.
[0004] A typical semiconductor device fabrication lithographic
process includes depositing a radiation sensitive material or
resist on a surface, exposing the resist to radiation through a
mask to transfer a desired pattern onto the surface, and developing
the resist to reveal the exposed pattern. Typically, if a resist is
deposited on an irregular surface, it will have a corresponding
irregularity. Such irregularities may cause variations in a depth
of focus across the device so that pattern features may not be
brought uniformly into sharp focus. If portions of the surface are
not in focus, the pattern may not be accurately transferred.
[0005] Additionally, surface irregularities may adversely affect
device interconnect reliability because metal layers deposited over
a surface irregularity may acquire unwanted configurations. These
configurations may cause undesirable current crowding in metal
layers. For the above reasons polishing is an important step in
semiconductor device fabrication processes.
[0006] Chemical-mechanical polishing (CMP) is a technique widely
used in the fabrication of semiconductor devices. CMP is performed
by introducing a polishing fluid or slurry between a workpiece
surface and a polishing article and moving the article and device
relative to one another. The slurry generally comprises abrasive
particles which may mechanically and chemically wear down unwanted
surface irregularities. Additional constituents chemically react
with the workpiece surface to smooth and planarize it. A polishing
article, such as a polishing pad may also mechanically wear away
surface irregularities.
[0007] CMP reaction products may become imbedded in the surface
which is being polished, and may cause scratches, particle defects
and impurities in surfaces. For example, during copper CMP, traces
of copper and barrier metal may be seen in the oxide dielectric
layer. Defects, scratches and impurities may reduce the reliability
of the device. It is known in the art to utilize chemical solutions
such as hydrofluoric acid (HF) to clean a surface after CMP to
reduce adverse effects of reaction products. Although generally
helpful in removing reaction products, such solutions may etch away
a portion of the layer that was polished. Additionally, planarity
or smoothness may be degraded by such post-CMP processes because of
step generations caused by dielectric oxide removal. Furthermore,
solutions such as HF used in copper CMP may attack barrier films
causing localized corrosion in copper trenches. Therefore, it is
desirable to develop a polishing fluid and method that remove
reaction products from the surface being polished without damaging
the polished layer.
SUMMARY OF THE INVENTION
[0008] The invention relates to a polishing fluid and method for
polishing particularly useful in the fabrication of semiconductor
devices. Further disclosed is a semiconductor device and a method
for fabricating a semiconductor device employing the polishing
fluid.
[0009] The polishing fluid comprises a distributed organic phase
and a continuous aqueous phase, each comprising at least one
complexing agent. The aqueous phase also has abrasive particles
dispersed therein. Reaction products generated during polishing
interact with the complexing agent in the aqueous phase to form
water soluble metallic complexes. The water soluble metallic
complexes diffuse to an organic/water interface where they release
complexing agent molecules in the aqueous phase and form
organometallic complexes in the organic phase, thereby
substantially removing reaction products from the surface being
polished.
DESCRIPTION OF THE DIAGRAM
[0010] A cross-sectional view of a semiconductor device.
DETAILED DESCRIPTION OF THE INVENTION
[0011] It will be appreciated that the following description is
intended to refer to specific embodiments of the invention selected
for illustration and is not intended to define or limit the
invention, other than in the appended claims.
[0012] The polishing fluid of the invention comprises a distributed
organic phase and a continuous aqueous phase. The organic phase is
dispersed in the continuous aqueous phase resulting in an
oil-in-water type emulsion useful, for example, as a CMP slurry.
Advantageously the aqueous phase and the organic phase contain one
or more complexing agents which facilitate substantial removal of
reaction products from a workpiece surface. During polishing,
complexing agents in the aqueous phase interact with reaction
products to form water soluble metallic complexes. Reaction
products are species removed from the workpiece surface during
polishing such as, for example, tungsten, copper, aluminum,
titanium, silicon tungstenoxide, copperoxide, titaniumoxide and
siliconoxide.
[0013] The general equation for the formation of the water soluble
metallic complex is:
M+R=M*R
[0014] where M is a metal molecule, R is a complexing agent in the
aqueous phase, and M*R is a water soluble metallic complex. The
water soluble metallic complex diffuses to an organic/water
interface where it undergoes a strip action releasing a complexing
agent molecule in the aqueous phase and providing a metal ion,
which may be expressed by:
M*R=M+(aq)+R
[0015] This in effect transports the metal ion to the organic/water
interface where it interacts with a complexing agent in the organic
phase, forming an organometallic complex. The general equation for
the formation of the organometallic complex is:
M+(aq)+R'-OH=M-R'+H.sub.2O
[0016] where R'-OH is a complexing agent in the organic phase and
M-R' is an organometallic complex.
[0017] Once organometallic complexes are formed they generally
remain in the organic phase as polishing proceeds. Released
complexing molecules in the aqueous phase may subsequently complex
with additional metallic species, continuing the process of
complexing and stripping. This results in an effective metal
species transfer.
[0018] Additionally, selectivity of the polish slurry may be
enhanced through this mechanism of carrier mediated transport of
metal species to the organic phase. Selectivity is enhanced by the
selective complexation of the metal species with the addition of a
chemical complexing agent in the aqueous slurry. Typically the
rates of chemical reactions for complexation and ligand
regeneration are fast in such a transport process. Thus, the
transport process is predominantly diffusion limited. The
simultaneous complexation and metal stripping reactions generate a
substantially continuous chemical potential gradient for the
transport to occur across the aqueous phase. Thus, by formation of
water soluble metallic complexes at the organic/water interface and
subsequent formation of organometallic complexes, reaction products
are substantially removed and maintained away from a workpiece
surface. Advantageously, removing and maintaining metals away from
the workpiece surface substantially eliminates possible detrimental
effects posed by continued polishing with a reaction
product-containing slurry.
[0019] A complexing agent in the aqueous phase may be any compound
that would react with metal ions in the aqueous phase to form water
soluble metallic complexes. Preferred complexing agents include
ethylene di-amine tetra-acetic acid (EDTA) and di-ethylene tetra
penta-acetic acid (DTPA). Combinations of complexing agents may
also be used.
[0020] A complexing agent in the organic phase may be any compound
that would react with metal ions in the organic phase to form
organometallic complexes. Diethylene-triamine-penta-acidic acid is
generally an effective complexing agent for any metal. For copper
applications bipyridine or orthophenanthroline have been found to
be particularly effective. 8-hydroxy-quinoline may be used as a
complexing agent and has been found to be particularly effective
for slurries used to polish aluminum. Combinations of complexing
agents may also be used.
[0021] The organic phase may advantageously be regenerated and
reused for emulsion formation. After the polishing fluid has been
utilized, organometallic complexes are dissolved in the organic
phase. The organometallic complexes can be split from the organic
phase to regenerate organic solvent. Regeneration may be performed
by ion exchange or by dissolution in an acidic medium or any other
method that strips the solvent of the organometallic complexes.
[0022] The aqueous phase contains abrasive particles which may
mechanically wear away material from a workpiece being polished and
may also react chemically with the surface material to further
effect polishing. Abrasive particles preferably comprise about 5
weight percent to about 30 weight percent of the polishing fluid.
Examples of abrasives include, but are not limited to, ceria,
alumina, silica, magnesium oxide and combinations thereof. These
abrasives are particularly effective in chemical-mechanical
polishing of semiconductor device layers.
[0023] The diameter of the abrasive particles is preferably in the
range of about 100 nm to about 1000 nm, more preferably in the
range of about 200 nm to about 500 nm and most preferably in the
range of about 300 nm to about 400 nm. Particles may be any shape,
with the "diameter" denoting roughly the longest dimensional line
of the particle taken from one surface point to another, through
the particle midpoint. If particles are too large, meaning greater
than about 1100 nm, scratching of the surface being polished may
occur. Additionally, removal rates may be too high and, therefore,
difficult to control or limit, and polishing results may be less
uniform.
[0024] The weight percent of solids contained in the slurry may
affect polishing results. For example, too high a weight percent of
solids, generally greater than 50%, may cause scratching of the
surface being polished, higher than desired removal rates or
nonuniform polishing. Solids as used herein refer to abrasives,
salts such as for example NH.sub.4NO.sub.3, stabilizers, abrasive
agglomerates and any other component present in a solid phase. The
percent solids is preferably in the range of about 20 weight
percent to about 50 weight percent of the polishing fluid.
[0025] The organic phase may contain additives to attain a
particular pH, the desired value of which is dependent on the
slurry application. Additives may also be used to alter reaction
characteristics to tailor the chemical potential gradient which
transports metal species across the aqueous phase. Other components
that may enhance polishing or improve characteristics of the
polishing fluid, such as for example, to increase shelf life or
polishing uniformity, may also be added to the organic phase.
[0026] The aqueous phase may also include one or more of the
following, constituents: oxidants, emulsion stabilizers,
surfactants, and acids or alkali components. Other components that
may enhance polishing or improve characteristics of the polishing
fluid may also be added to the aqueous phase.
[0027] Oxidants may include, for example, NH.sub.4OH,
NH.sub.4NO.sub.3, H.sub.2O.sub.2 or mixtures thereof. These
components oxidize metal surfaces to enhance polishing. The oxides
of metals such as for example, Ta, Ti, W and Al, are softer than
the pure metal and, therefore, are more easily polished. For some
metals, for example copper, oxidants also protect the surface from
corrosion. An oxidized layer acts as a passivization layer that
protects the bulk metal from corrosion. In this manner CMP and
oxidation may occur simultaneously.
[0028] Emulsion stabilizers keep phases substantially uniformly
dispersed and protect the polishing fluid from degradation such as
from fungal growth. Emulsion stabilizers may include, for example,
sulfonates, but any emulsion stabilizer that aids in substantially
uniformly dispersing the phases or that protects against slurry
degradation may be used, provided that its benefits do not outweigh
any negative effects on polished surfaces or to slurry polishing
capabilities.
[0029] Surfactants may be utilized to aid in creating and
maintaining the distributed phase within the continuous phase.
Surfactants comprise hydrophilic and hydrophobic groups allowing
them to attract both the distributed and continuous phases, thereby
facilitating immiscibility. Surfactants may also improve the
slurry's ability to wet the workpiece or polishing article.
Surfactants may include, but are not limited to, alkyl, benzyl,
lauryl sulfonates or combinations thereof.
[0030] Acids or alkali solutions may be added for pH control. The
desired pH of the polishing fluid depends on the type of surface
being polished. For example, a pH in the range of about 2 to about
6 is preferable when polishing metals, whereas a pH in the range of
about 9 to about 13 is preferable when polishing dielectrics which
typically comprise oxides. Generally, in applications of the
inventive slurry the pH is preferably between about 2 and about 6
and more preferably between about 3 and about 5.
[0031] The ratio of the distributed phase to the continuous phase
is preferably in the range of about 2:98 volume percent to about
50:50 volume percent of the polishing fluid, and more preferably in
the range of about 5:95 volume percent to about 40:60 volume
percent. The ratio of volume percents of the distributed phase to
the continuous phase in excess of 50:50 may result in reversal of
the distributed and the continuous phases. Therefore, to ensure the
integrity of the slurry system, the volume percent ratio should be
maintained below 50:50.
[0032] The invention further includes a semiconductor device and
fabrication method wherein at least some device layers are polished
utilizing the polishing fluid of the invention. Device performance
and reliability is expected to be improved due to the removal of
reaction products from surfaces during polishing steps.
[0033] The drawing depicts a schematic of a semiconductor device
200. Those skilled in the art will understand that it shows a
simplified drawing of semiconductor device 200 for illustrative
purposes only. For example, an actual device may have layers of
varying thicknesses and may contain other components. Semiconductor
substrate 202 is covered by a first dielectric layer 204. Above
first dielectric layer 204 is a first metal layer 206. Vias or
interconnects 208, 210, 212 and 214 penetrate layer 204 and
conductively connect first metal layer 206 to semiconductor
substrate 202. First metal layer 206 is covered by second
dielectric layer 216 which contains vias 218, 220 and 222 to
connect first metal layer 206 to a second metal layer 224. This
layering sequence may be repeated as necessary as shown in part by
layers 226 and 228, and interconnects 232, 234 and 236. A top
passivation layer 230 may be applied to protect device 200 from
adverse electrical, chemical or other conditions, and to provide
electrical stability.
[0034] Semiconductor substrate 202 may comprise silicon for
example. Common dielectrics include, but are not limited to,
silicon oxides, such as boron phosphorous doped silicate glass
(BPSG), tetraethylorthosilicate (TEOS) and silicon dioxide
(SiO.sub.2). Common metals include, for example, aluminum, copper
and tungsten. In addition, to improve adherence between metal and
dielectric layers, thin layers may be introduced between them.
Titanium is commonly used for this purpose. Electronic circuitry is
defined in the layers by a lithographic technique.
[0035] In the lithographic process used to form the circuitry in
device 200 a resist is deposited over a device layer. The resist is
exposed by transmitting radiation through a mask or reticle onto
the layer surface. The mask pattern defines the desired circuitry
or other feature. The form of radiation used is dependent on the
type of resist and other fabrication parameters. Any form of
radiation that may expose the resist without adverse effects to the
workpiece may be used. Common examples include, ultraviolet
radiation, electron beam radiation and x-rays. If a positive resist
is used, the exposed areas will be removed revealing the dielectric
layer below. The dielectric layer may then be removed, for example
by etching. Any technique that will remove the exposed dielectric
layer while leaving the resist covered portions intact may also be
used. Negative resists may be used wherein the exposed resist areas
are left intact after exposure and the nonexposed areas are
removed. For negative resist processes a mask is used that defines
the spaces between circuit components rather than the circuitry
itself. Similar lithographic processes may also be employed to form
the interconnects in the dielectric layers or other device
features.
[0036] Surfaces of some or all of the device layers may be polished
during device 200 fabrication to create a substantially smooth,
planar surface for accurate transfer of circuit patterns and
creation of circuit components, and to satisfactorily carry out
other fabrication steps. Surfaces are polished by bringing a
polishing article in at least partial contact with the surface. The
polishing fluid of the invention is introduced between the
semiconductor device surface being polished and a polishing
article. The semiconductor device surface and polishing article are
effectively moved in relation to one another. This may be
accomplished by either moving the device or the polishing article
in relation to a polishing apparatus or moving both the device and
the polishing article in relation to one another. Once the layer is
polished it can undergo further processes if necessary to fabricate
the semiconductor device. Surfaces of any number of device layers
may be polished using the polishing fluid and method of the
invention.
* * * * *