U.S. patent application number 09/736653 was filed with the patent office on 2001-08-23 for in-situ fluid jet orifice.
Invention is credited to Coffman, Phillip R., Haluzak, Charles C., Sexton, Douglas A., Truninger, Martha, Whitlock, John P..
Application Number | 20010015737 09/736653 |
Document ID | / |
Family ID | 21870696 |
Filed Date | 2001-08-23 |
United States Patent
Application |
20010015737 |
Kind Code |
A1 |
Truninger, Martha ; et
al. |
August 23, 2001 |
In-situ fluid jet orifice
Abstract
A process for creating and an apparatus employing reentrant
(pointing or directed inward) shaped orifices in a semiconductor
substrate. A layer of graded dielectric material is deposited on
the semiconductor substrate. A masked photoimagable material is
deposited upon the graded dielectric material and exposed to
electromagnetic energy such that a patterned photoimagable material
is created. The patterned photoimagable material is developed to
unveil the graded dielectric material which is then anisotropically
etched. The bore in the graded dielectric material is then
isotropically etched to complete the creation of holes in the
substrate.
Inventors: |
Truninger, Martha;
(Corvallis, OR) ; Coffman, Phillip R.; (Woodburn,
OR) ; Haluzak, Charles C.; (Corvallis, OR) ;
Whitlock, John P.; (Lebanon, OR) ; Sexton, Douglas
A.; (San Diego, CA) |
Correspondence
Address: |
HEWLETT-PACKARD COMPANY
Intellectual Property Administration
P. O. Box 272400
Fort Collins
CO
80527-2400
US
|
Family ID: |
21870696 |
Appl. No.: |
09/736653 |
Filed: |
December 13, 2000 |
Related U.S. Patent Documents
|
|
|
|
|
|
Application
Number |
Filing Date |
Patent Number |
|
|
09736653 |
Dec 13, 2000 |
|
|
|
09033487 |
Mar 2, 1998 |
|
|
|
6204182 |
|
|
|
|
Current U.S.
Class: |
347/47 |
Current CPC
Class: |
B41J 2/1629 20130101;
B41J 2/1603 20130101; B41J 2/1607 20130101; B41J 2/1628 20130101;
B41J 2/1645 20130101; B41J 2/1642 20130101; B41J 2/1631
20130101 |
Class at
Publication: |
347/47 |
International
Class: |
B41J 002/14 |
Claims
What is claimed is:
1. A method for creating holes in a semiconductor substrate having
a first surface and a second surface, comprising the steps of:
depositing a layer of graded dielectric material on said first
surface of said semiconductor substrate; applying a masked
photoimagable material on said deposited layer of graded dielectric
material; exposing said masked photoimagable material to
electromagnetic energy, whereby patterned photoimagable material is
created; developing said patterned photoimagable material;
anisotropically etching said deposited layer of graded dielectric
material; and isotropically etching said deposited layer of graded
dielectric material.
2. A method for creating a printhead for ejecting fluid comprising
the steps of claim 1 for creating holes and further comprising the
steps of: creating a plurality of fluid feed slots through said
semiconductor substrate and said plurality of fluid feed slots
opening within said holes in the semiconductor substrate;
depositing a plurality of energy dissipating elements in proximity
to said holes to propel the fluid from said holes in the
semiconductor substrate; and creating a plurality of fluid feed
channels within said second surface of said semiconductor substrate
and disposing said plurality fluid feed channels in association
with said plurality of fluid feed slots so that said plurality of
fluid feed slots are exposed.
3. A method for creating reentrant orifices in a semiconductor
substrate, comprising the steps of: depositing a first layer of
graded dielectric material on said substrate; depositing a second
layer of graded dielectric material on said first layer of graded
dielectric material. applying a photoimagable material on said
deposited layer of graded dielectric material; exposing said
photoimagable material to electromagnetic energy, whereby patterned
photoimagable material is created; developing said patterned
photoimagable material; anisotropically etching said deposited
second layer of graded dielectric material; removing remaining said
photoimagable material; and isotropically etching said deposited
first layer of graded dielectric material.
4. A method for constructing a fluid jet print head having a
semiconductor substrate having a first surface and a second surface
having a plurality of fluid feed slots extending through said
semiconductor substrate and coupled to a plurality of fluid feed
channels on said second surface, comprising the steps of:
depositing a layer of graded dielectric material on said first
surface of said semiconductor substrate; applying a layer of
photoimagable material on said deposited layer of graded dielectric
material; transferring a plurality of individual orifice images to
said deposited layer of photoimagable material; developing those
portions of said layer of photoimagable material where said
transferred plurality of individual orifice images are located to
locate respective plurality of individual orifice openings;
anisotropically dry etching said deposited layer of graded
dielectric material to produce a plurality of dry etched orifices,
each dry etched orifice circumscribed by a erect wall having a
first portion and a second portion; and isotropically etching said
layer of deposited graded dielectric material such that the etch
rate is enhanced toward said second portion of said erect wall and
whereby the reentrant orifice bore profile is created.
5. The method in accordance with claim 4, wherein: said step of
depositing said graded dielectric material further comprises
depositing a composition gradient of silicon oxynitride, having a
first surface that contacts said silicon substrate and a second
surface that contacts said layer of photoimagable material, with
higher concentrations of oxygen near said first surface of said
deposited composition gradient and higher concentrations of
nitrogen near said second surface of said deposited composition
gradient.
6. The method in accordance with claim 4, wherein said step of
depositing said graded dielectric material further comprises
depositing a composition gradient of silicon oxynitride, having a
first surface that contacts said silicon substrate and a second
surface that contacts said layer of photoimagable material, with
higher concentrations of oxygen near said second surface of said
deposited composition gradient and higher concentrations of
nitrogen near said first surface of said deposited composition
gradient.
7. The method in accordance with claim 4, wherein said step of
depositing said layer of graded dielectric material further
comprises the steps of depositing a composition gradient using a
dopant material in silicon dioxide materials.
8. The method in accordance with claim 7, wherein said step of
depositing said graded dielectric material comprises depositing
doped silicon dioxide; and said dopant material is one of the
elements of the group consisting of boron, phosphorous, arsenic,
germanium, and fluorine.
9. The method in accordance with claim 7, wherein said step of
depositing said graded dielectric material comprises depositing
doped silicon dioxide; and said dopant material is a network
modifier.
10. The method in accordance with claim 9, wherein said network
modifier is Na.sub.2O.
11. The method in accordance with claim 9, wherein said network
modifier is NaCl.
12. The method in accordance with claim 7, wherein said step of
depositing said graded dielectric material comprises depositing
doped silicon dioxide; and said dopant material is a network
former.
13. The method in accordance with claim 12, wherein said network
former is P.sub.2O.sub.5.
14. The method in accordance with claim 7, wherein said depositing
a layer of graded dielectric material further comprises the steps
of: depositing a first individual thin layer; and depositing
iteratively a plurality of successive individual thin layers of
dielectric material, each successive individual thin layer having
an increased dopant concentration than previous deposited
individual thin layer.
15. The method in accordance with claim 7, wherein said depositing
a layer of graded dielectric material further comprises the steps
of: depositing a first individual thin layer; and depositing
iteratively a plurality of successive individual thin layers of
dielectric material, each successive individual thin layer having a
decreased dopant concentration than previous deposited individual
thin layer.
16. The method in accordance with claim 7, wherein said depositing
a layer of graded dielectric material further comprises the step of
continuously changing the dopant level during layer deposition by
controlling the amount of dopant present from a low concentration
to a high concentration.
17. The method in accordance with claim 7, wherein said depositing
a layer of graded dielectric material further comprises the step of
continuously changing the dopant level during deposition by
controlling the amount of dopant present from a high concentration
to a low concentration.
18. The method in accordance with claim 4, wherein said step of
depositing said layer of graded dielectric material further
comprises the step of applying an 8 to 30 micron thickness of said
deposited layer of graded dielectric material using a chemical
vapor deposition tool.
19. The method in accordance with claim 4, wherein said step of
depositing said layer of graded dielectric material further
comprises the step of etching utilizing a RIE mode fluorine-based
chemistry technique.applying an 8 to 30 micron thickness of said
deposited layer of graded dielectric material using a solution
based spin coating tool.
20. The method in accordance with claim 4, wherein said step of
anisotropically dry etching said layer of graded dielectric
material further comprises the step of etching utilizing a RIE mode
fluorine-based chemistry technique.
21. The method in accordance with claim 4, wherein said step of
isotropically etching said layer of graded dielectric material
further comprises the step of etching utilizing a buffered oxide
etch process chemistry.
22. The method in accordance with claim 4, wherein said step of
isotropically etching said layer of graded dielectric material
further comprises the step of utilizing a hot phosphoric process
chemistry typically operating at a temperature between 120 and 180
degrees C.
23. The method in accordance with claim 4, wherein said step of
isotropically etching said layer of graded dielectric material
further comprises utilizing a dry etch tool using a
fluorinated-based plasma chemistry.
24. The method in accordance with claim 4, wherein said step of
isotropically etching said layer of graded dielectric material
further comprises utilizing a dry etch tool using a
chlorinated-based plasma chemistry.
25. The method in accordance with claim 4, wherein said step of
depositing a layer of graded dielectric material further comprises
the steps of iteratively depositing a thin layer of a material in
which a refractive index is predetermined and substantially the
same for each thin layer, each iterative thin layer of material has
a different predetermined composition density such that each
interative thin layer of material is more compressed than the
previously deposited thin layer of material.
26. The method in accordance with claim 25, wherein said step of
depositing said layer of graded dielectric material further
comprises the steps of depositing thin layers of PECVD TEOS-derived
silicon dioxide.
27. The method in accordance with claim 25, wherein said step of
depositing said layer of graded dielectric material further
comprises the steps of depositing thin layers of silane-based
silicon dioxide.
28. The method in accordance with claim 25, wherein said step of
depositing said layer of graded dielectric material further
comprises the steps of depositing thin layers of silicon
oxynitride
29. The method in accordance with claim 4, wherein said step of
depositing a layer of graded dielectric material further comprises
the step of depositing an 8 to 30 micron thick material in which a
combination of both composition and stress gradients exist.
30. The method in accordance with claim 4, wherein said step of
depositing a layer of graded dielectric material further comprises
the steps of: depositing an 8 to 30 micron thick material in which
a combination of both doping and stress gradients exist; and
isotropically etching of said layer of deposited graded dielectric
material where the etch rate is enhanced such that a serrated
reentrant orifice bore profile is created.
31. The method in accordance with claim 4, further comprising the
step of planarizing the dielectric material layer after it is
deposited to form a planar surface.
32. The method in accordance with claim 31, wherein said step of
planarizing is performed using a chemical mechanical planarization
technique.
33. The method in accordance with claim 31, wherein said step of
planarizing is performed using a planarization etch technique.
34. The method in accordance with claim 31, wherein said step of
planarizing is performed using a spin on glass technique.
35. A method for creating reentrant orifices in a semiconductor
substrate having a plurality of fluid feed slots, comprising the
steps of: filling said plurality of fluid feed slots with a
carbon-based material; depositing a first layer of graded
dielectric material on said substrate; depositing a second layer of
graded dielectric material on said first layer of graded dielectric
material. applying a photoimagable material on said deposited layer
of graded dielectric material; exposing said photoimagable material
to electromagnetic energy, whereby patterned photoimagable material
is created; developing said patterned photoimagable material;
anisotropically etching said deposited second layer of graded
dielectric material; removing remaining said photoimagable
material; isotropically etching said deposited first layer of
graded dielectric material; and etching said carbon-based material
in said plurality of fluid feed slots.
36. The method in accordance with claim 35, wherein said step for
filling said plurality of fluid feed slots with a carbon-based
material further comprises filling said plurality of fluid feed
slots with a carbon-based polymer.
37. The method in accordance with claim 35, wherein said step for
filling said plurality of fluid feed slots with a carbon-based
material further comprises filling said plurality of fluid feed
slots with a physically deposited graphite.
38. A method for creating reentrant orifices in a semiconductor
substrate having a plurality of fluid feed slots comprising the
steps of: filling said plurality of fluid feed slots with a
carbon-based material; depositing a first layer of graded
dielectric material on said substrate; depositing a second layer of
graded dielectric material on said first layer of graded dielectric
material. applying a photoimagable material on said deposited layer
of graded dielectric material; exposing said photoimagable material
to electromagnetic energy, whereby patterned photoimagable material
is created; developing said patterned photoimagable material;
anisotropically etching said deposited second layer of graded
dielectric material and said deposited first layer of graded
dielectric material; removing remaining said photoimagable
material; isotropically etching said deposited first layer of
graded dielectric material; and etching said carbon-based material
in said plurality of fluid feed slots.
39. A semiconductor substrate having a first surface and a second
surface, comprising a layer of graded dielectric material having a
degree of gradation deposited on said first surface of the
semiconductor substrate and having a plurality of holes extending
through said layer of graded dielectric material, at least one of
said holes having a reentrant profile related to said degree of
gradation of said graded dielectric material.
40. The semiconductor substrate in accordance with claim 39,
wherein said layer of graded dielectric material further comprises
a thickness of 8 to 30 microns.
41. The semiconductor substrate in accordance with claim 39,
wherein said layer of graded dielectric material is essentially
silicon dioxide.
42. The semiconductor substrate in accordance with claim 39,
wherein said layer of graded dielectric material is essentially
silicon oxynitride.
43. The semiconductor substrate in accordance with claim 39,
wherein said layer of graded dielectric material further comprises
a layer of essentially silicon dioxide and a layer of essentially
silicon oxynitride.
44. A head for ejecting fluid using a semiconductor substrate,
comprising: a semiconductor substrate having a first surface and a
second surface; a stack of thin film layers affixed to said first
surface of said semiconductor wafer; a plurality of fluid feed
slots established through said stack of thin film layers; a layer
of graded dielectric material having a plurality of orifices
defined therein, said graded dielectric material deposited on said
stack of thin film layers, each orifice of said plurality of
orifices positioned over a respective fluid feed slot of said
plurality of fluid feed slots, at least one orifice of said
plurality of orifices having a reentrant profile; a plurality of
energy dissipating elements to propel fluid from associated
orifices of said plurality of orifices; and a plurality of fluid
feed channels defined within said second surface of said
semiconductor wafer and opening into said plurality fluid feed
slots.
45. A fluid cartridge used to deliver fluid comprising the head for
ejecting fluid as in claim 44, further comprising: a fluid
reservoir; and a fluid delivery assemblage for delivering fluid
from the fluid reservoir to said plurality of fluid feed
channels.
46. A liquid fluid jet recording apparatus comprising a fluid
cartridge according to claim 45 and further comprising a conveyance
assemblage for transporting a recording medium on which recording
is effected by said fluid cartridge.
47. A semiconductor substrate produced in accordance with the
method of claim 1.
48. A semiconductor substrate having a plurality of orifices
produced in accordance with claim 3.
49. A fluid jet printhead produced in accordance with the method of
claim 4.
50. A semiconductor substrate having a plurality of orifices
produced in accordance with claim 35.
51. A semiconductor substrate having a plurality of orifices
produced in accordance with claim 38.
Description
BACKGROUND OF THE INVENTION
[0001] This invention generally relates to thermal inkjet printing.
More particularly, this invention relates to the apparatus and
process of manufacturing precise orifices using a graded dielectric
material using anisotropic etching and followed by isotropic
etching of the graded dielectric material.
[0002] Thermal inkjet printers typically have a printhead mounted
on a carriage that traverses back and forth across the width of the
paper or other medium feeding through the printer. The printhead
includes an array of orifices (also called nozzles) which face the
paper. Associated with each orifice is a firing chamber. Ink (or
another fluid) filled channels feed the firing chamber with ink
from a reservoir ink source. Applied individually to addressable
resistors, energy heats the ink within the firing chambers causing
the ink to bubble and thus expel ink out of the orifice toward the
paper. Those skilled in the art will appreciate that other methods
of transferring energy to the ink or fluid exist and still fall
within the spirit, scope and principle of the present invention. As
the ink is expelled, the bubble collapses and more ink fills the
channels and firing chambers from the reservoir, allowing for
repetition of the ink expulsion.
[0003] Current designs of inkjet printheads have problems in their
manufacturing, operating life and accuracy in directing the ink
onto the paper. Printheads currently produced comprise an inkfeed
slot, a barrier interface (The barrier interface channels the ink
to the resistor and defines the firing chamber volume. The barrier
material is a thick, photosensitive material that is laminated onto
the wafer, exposed, developed, and cured), and an orifice plate
(The orifice plate is the exit path of the firing chamber. The
orifice is typically electroformed with nickel (Ni) and then coated
with gold (Au), palladium, or other precious metals for corrosion
resistance. The thickness and bore diameter of the orifice plate
are controlled to allow repeatable drop ejection when firing.).
During manufacturing, aligning the orifice plate requires special
precision and special adhesives to attach it to other portions of
the printhead. If the orifice plate is warped or if the adhesive
does not correctly bond the orifice plate to the barrier interface,
poor control of the ink results and the yield or life of the
printhead is reduced. If the alignment of the printhead is
incorrect or the orifice plate is dimpled (non-uniform in its
planarization), the ink will be ejected away from its proper
trajectory and the image quality of the printout is reduced.
Because the orifice plate is a separate piece, the thickness
required to prevent warping or buckling during manufacturing
requires the height (related to thickness of the orifice plate) of
the orifice bore to be higher than necessary for thermal
efficiency. The increased height of the ink in the orifice bore,
from the resistor to the orifice plate's outer surface, requires
more heating to eject the ink. A related issue is that
reproductions that are more accurate require higher resolutions of
ink placement onto the medium. Therefore, the amount of ink
expelled must be reduced to create a finer dot on the medium. As
the quantity of ink expelled becomes smaller, more orifices are
required within the printhead to create a given pattern in a single
traverse of the printhead over the medium at a fixed print speed.
In the past, the lifetime of the printhead was adequate as the
printhead was part of a disposable pen that was replaced after the
ink supply ran out. User expectations for quality are driving the
need to have a long life printhead with multiyear permanence and
the present invention helps fulfill this expectation.
SUMMARY OF THE INVENTION
[0004] A process for creating and an apparatus employing reentrant
shaped orifices in a semiconductor substrate. A layer of graded
dielectric material is deposited on the semiconductor substrate. A
photoimagable material is applied upon the graded dielectric
material, masked and exposed to electromagnetic energy such that a
patterned photoimagable material is created. The patterned
photoimagable material is developed to unveil the graded dielectric
material, which is then anisotropically etched. The graded
dielectric material is then isotropically etched to complete the
creation of reentrant holes in the substrate.
BRIEF DESCRIPTION OF THE DRAWINGS
[0005] FIG. 1A shows the top view of a single orifice of the
preferred embodiment.
[0006] FIG. 1B is a isometric cross sectional view of the orifice
showing the basic structure.
[0007] FIGS. 2A through 2F show the process steps in a alternate
embodiment to create an in-situ orifice. The cut-away view is the
AA perspective from FIG. 1A.
[0008] FIG. 3A is the top view of a printhead showing multiple
orifices.
[0009] FIG. 3B is the bottom view of the printhead shown in FIG.
3A.
[0010] FIG. 4 shows a print cartridge that utilizes a printhead
which may employ the present invention.
[0011] FIG. 5 shows a printer mechanism using a print cartridge
that has a printhead which may employ the present invention.
[0012] FIG. 6A shows a cross section of the dielectric layer
created using an iteration of multiple thin layers from which an
orifice is formed.
[0013] FIG. 6B shows a cross section of the combined dielectric
layers after an isotropic etch to form a reentrant bore
profile.
[0014] FIG. 6C shows a cross section of an orifice having serrated
edges created using the present invention.
[0015] FIGS. 7A, 7B and 7D shows cross sections of the preferred
embodiment at different stages.
[0016] FIG. 7A shows a cross section of a silicon substrate that
has been processed by depositing two separate dielectric layers
having different etch characteristics for an anisotropic etch
process. A photoresist layer is deposited upon the last dielectric
layer and shows the orifice pattern opening.
[0017] FIG. 7B shows a cross section of the silicon substrate from
FIG. 7A after it has been anisotropically etched.
[0018] FIG. 7C shows a cross section of an alternative embodiment
in which the anisotropically etched step shown in FIG. 7B etches
both deposited dielectric layers.
[0019] FIG. 7D shows a cross section of the silicon substrate from
FIG. 7B or FIG. 7C after it has been isotropically etched.
DETAILED DESCRIPTION OF THE PREFERRED AND ALTERNATE EMBODIMENTS
[0020] FIG. 1A shows the top view of a single orifice (also called
a nozzle or a hole) using a preferred embodiment of the present
invention. Graded dielectric layer 34 (A layer arranged in a
graduated series or a layer progressively graded, the grade being
representative of the material composition of the layer or the
material stress within the layer) has an opening defined therein
constituting reentrant (pointing or directed inwards) orifice 42. A
fluid, such as ink, in drawn into the reentrant orifice 42 through
fluid feed slots 30. The fluid is heated using energy dissipation
element 32, which can be a resistor, a piezoelectric device, or an
electrorestrictive device among other propulsive mechanisms. For a
resistor, heating the fluid forms a bubble and the force from the
bubble propels the liquid adjacent to the bubble out of reentrant
orifice 42, thereby forming a liquid jet of fluid.
[0021] FIG. 1B is an isometric view of the reentrant orifice 42
showing the basic erect structure. Fluid is conducted through fluid
feed channel 44 along the backside of semiconductor substrate 20
and brought into the reentrant orifice 42 through fluid feed slots
30. A stack of thin film layers 50 is used to define circuitry that
is used to control the flow of fluid from reentrant orifice 42,
such as energy dissipation element 32. A graded dielectric layer 34
is deposited on top of the stack of thin film layers 50 and etched
to form reentrant orifice 42.
[0022] FIG. 2A shows a semiconductor substrate 20 that has been
processed to deposit the stack of thin film layers 50. This stack,
for a resistive fluid jet printhead would be composed of a layer of
SiO.sub.2 (silicon dioxide) 22, a layer of PSG (phosphosilicate
glass) 24, a layer TaAl (Tantalum Aluminum) used to form the energy
dissipation element 32, a layer of Al for interconnection (not
shown), a layer of dielectrics 26 comprised of Si.sub.3N.sub.4
(silicon nitride) and SiC (silicon carbide) and a layer of Ta
(Tantalum) 28 used to protect the previous layers from the
corrosive effects of the fluid. Those skilled in the art will
appreciate that other thin film layer stacks can be used and still
fall within the spirit and scope of the invention. After the stack
of thin film layers 50 is placed on semiconductor substrate 20,
fluid feed slots 30 are etched in the stack of thin film layers
50.
[0023] FIG. 2B shows the result of the conformal deposition (not to
scale) of graded dielectric material 34. After graded dielectric
material 34 is deposited, a planarization process is used to even
out the top surface of graded dielectric material 34. This
planarization can be achieved, for example, using CMP (Chemical
Mechanical Planarization), a planarization etch, or preferably a
SOG (Spin on Glass) technique. Several embodiments for performing
the gradation of the dielectric material exist. The graded
dielectric material 34 layer is comprised of a gradation of a
composition of matter or of a gradation of stress. The layer is
comprised of a continuous gradation or the gradation may occur in
steps through the buildup of several thin layers. A first alternate
embodiment in which gradation is achieved by using silicon
oxynitride material SiO.sub.xN.sub.y where the amount of oxygen (x)
or nitrogen (y) vary depending on the amounts present during
deposition of the layer. A second alternate embodiment of gradation
is to have the amount of nitrogen remain fixed while varying the
amount of oxygen. An example would be to have the concentration of
oxygen present decrease as the stack builds up. In a third
alternate embodiment, the amount of oxygen could remain fixed while
the amount of nitrogen varied. A thickness of 8 microns or more,
preferably 8 to 30 microns, of graded silicon oxynitride is
deposited using preferably a SOG technique (such as a solution
based spin coating tool) or using single or dual frequency PECVD
(Plasma Enhanced Chemical Vapor Deposition), APCVD (Atmospheric
Pressure Chemical Vapor Deposition) or a high-density deposition
tool. However, if the amount of oxygen or nitrogen cannot be
variably controlled during deposition, the 8 to 30 microns of
graded silicon oxynitride can be done using several thinner layers,
for example 2 to 6 microns, in which each thinner layer has a fixed
ratio of oxygen to nitrogen but each thinner layer has a different
composition than the other layers. Again, the amount of oxygen to
nitrogen ratio can be increased or decreased in each successive
thinner layer.
[0024] In a fourth alternate embodiment, the composition of matter
gradation can be done using variable doping of silicon dioxide as
it is deposited using elemental dopants or a variety of network
modifiers or formers. Possible elemental dopants are boron,
preferably phosphorous, arsenic, germanium or fluorine. In an
exemplary embodiment of the invention using phosphorous doped
oxide, the percent concentration of phosphorous in the material is
varied through the graded dielectric material 34. The greatest
percentage of phosphorous would exist in the bottom of the graded
dielectric material 34 with little or no phosphorous in the
top.
[0025] Network modifiers or network formers, as an alternative to
elemental doping, can be added to the silicon dioxide to either
enhance or decrease etch rates as desired. Network modifiers such
as Na.sub.2O and NaCl donate the anion to the SiO.sub.2 network and
depolymerize it. This effect decreases density and increases the
etch rate. The cation is mobile in the open channels formed by the
depolymerization. A network former such as P.sub.2O.sub.5
(phosphorous pentoxide) is locked into the oxide structure and it
donates some of its oxygen to the SiO.sub.2, thereby depolymerizing
it and increasing the etch rate. Another network former is
B.sub.2O.sub.3 (boric oxide) and it bonds to the non-bridging
oxygen in the SiO.sub.2 which polymerizes it and decreases the etch
rate.
[0026] A fifth alternate embodiment of the invention grades the
dielectric material by using iterative layers comprising different
levels of stress within each layer. For oxide materials, the stress
within the material, the optical refractive index of the material,
the composition, and density of the material are inter-related. By
holding one of the variables constant, the changes to the others
will be interrelated. An 8 to 30 micron graded dielectric material
34 is made up of several thinner layers in which each thin layer
has substantially the same optical refractive index. Stress in each
of the thin layers is then individually altered by varying the
hydrogen content of the material, thus varying the material density
within each thin layer. By increasing or decreasing plasma power in
a PECVD process, the stress can be varied as desired. Possible
material deposited to form the layers are PECVD TEOS
(tetraethylorthosilcate)-derived silicon dioxide, silane-based
silicon dioxide, or preferably silicon oxynitride using a single or
dual frequency deposition tool may be used with acceptable results.
The stress is graded such that the most tensile layer is at the
bottom (near the semiconductor substrate) and the most compressive
layer is at the top of the graded dielectric material 34. The
appropriate isotropic etch process and anisotropic etch process
compatible with the dielectric material chosen would then be
performed to create the reentrant orifice. The essential
distinction in this stress related embodiment being that material
with less compressive stress is etched at a faster rate than
material with a higher compressive stress and thus forming the
reentrant profile of the orifice.
[0027] Finally, a sixth alternate embodiment of the invention uses
both composition of matter and stress gradation, combined, to
optimize the material thickness and to enhance etch rates which
produce the optimum reentrant orifice bore profile. Special
structures such as serrated reentrant bore profiles are achieved
using this method.
[0028] FIG. 2C shows the deposition and removal of photoimagable
material 38 to form an opening to expose the graded dielectric
material 34 where an orifice is to be etched. Photoimagable
material 38 is any appropriate soft or hard mask such as
photoresist, epoxy polyamide, acrylate, photoimagable polyamide, or
other appropriate photoimagable material.
[0029] FIG. 2D shows the result of an anisotropic dry etch of the
graded dielectric material 34 to produce a straight walled orifice
40. The anisotropic dry etch is performed utilizing an RIE mode
fluorine-based chemistry or similar process to produce a near erect
wall or slightly positive profile via type structure.
[0030] FIG. 2E shows the result of an isotropically dry or wet etch
via to produce the reentrant orifice bore profile 42. This step is
performed, in the preferred embodiment, using an isotropic dry etch
tool using a fluorinated and/or chlorinated-based plasma chemistry,
or alternatively, in a BOE (buffered oxide etch) process chemistry,
or a hot phosphoric process chemistry typically operating at a
temperature between 120 to 180 degrees C. When the graded
dielectric material 34 is done by composition, a wet etch range up
to and greater than 1000-3000 Ang/min. can be achieved. The method
of isotropically etching is chosen to produce a reentrant orifice
profile given the method in which the deposited dielectric material
was gradated.
[0031] FIG. 2F shows the result of an anisotropic etch for forming
the fluid feed channel 44 on the semiconductor substrate 20
backside. The silicon dioxide etch rates in a TMAH (tetramethyl
ammonium hydroxide) solution are negligible and thus limit the
etching process from attacking the thin film materials.
[0032] FIG. 3A shows a multiple orifice printhead, employing the
present invention and showing the location of reentrant orifices
42, graded dielectric material 34, stack of thin film layers 50 and
semiconductor substrate 20. FIG. 3B shows the backside of the
multiple orifice printhead shown in FIG. 3A. The backside reveals
the fluid feed channels 44 and fluid feed slots 30 as well as the
aforementioned graded dielectric material 34, thin film layers 50
and semiconductor substrate 20.
[0033] FIG. 4 shows an assembled fluid print cartridge which
contains the printhead 60 having multiple reentrant orifices 42, a
fluid delivery system 100, a fluid reservoir 104, electrical
contacts 102 for controlling the printhead 60 and a flex circuit
106 to connect the electrical contacts 102 to the printhead 60.
[0034] FIG. 5 shows a printer assemblage 200 that uses the fluid
print cartridge from FIG. 4. The cartridge is mounted on carriage
assemblage 240. Recording medium 230 is fed through the printer
using a feed mechanism 260 and receiving tray 210. The recording
medium 230 is printed upon as it passes printhead 60 and is ejected
into output tray 220.
[0035] FIG. 6A shows the dielectric layer created using an
iteration of multiple thin layers 150, 152, 154,156 and 158, with
the most tensile layer 158 near the semiconductor substrate. The
inner layers 156, 154, and 152, respectively, each have more
compression than the previous layer deposited. The least tensile or
most compressed layer 150 is deposited last. For a 10 micron
constructed orifice, each layer comprises 2 microns of material. An
alternative embodiment is to have each thin layer be a different
height than other thin layers to allow for a desired profile shape
after etching. Straight wall orifice 40 is formed after the
material is anisotropically etched. FIG. 6B shows the dielectric
layer after an isotropic etch to form a reentrant bore profile. A
reentrant orifice 42 is formed after isotropically etching graded
dielectric layer 34.
[0036] FIG. 6C shows a unique serrated orifice that can be produced
by combining stress and composition gradients. In this case, each
thinner layer will etch at a rate proportional to its composition.
The difference in stresses at the boundary between layers causes
the etch rate of each thinner layer wall to be non-uniform and thus
creates the serrated effect. By adjusting the composition and
stress gradient of each thin layer, creative bore profiles can be
designed.
[0037] FIGS. 7A, 7B and 7D show the preferred embodiment of a
printhead produced by the preferred process to create a unique
orifice profile created by using the anisotropic etch technique. In
FIG. 7A, two dielectric material layers are deposited on the
semiconductor substrate 20 with thin film layers 50 and fluid feed
slot filler 31. Fluid feed slot filler 31 can be either a
physically deposited carbon or spin on carbon-based polymer. The
first dielectric material 35 (preferably 5 microns of SiO.sub.2) is
picked to be very reactive to an isotropic etch process chosen
(preferably a wet etch in BOE). The second dielectric material 34
(preferably 5 microns of SiN), deposited after first dielectric
material layer 35, is picked to be minimally reactive to the
isotropic etch process and to be reactive to the chosen anisotropic
etch process that is used to form near erect walls 41 in second
dielectric layer 34. Photoresist layer 36 is used to form pattern
39 of the orifice opening. In FIG. 7B, the anisotropic etch is then
performed to form the near erect walls 41 in the second layer. The
anisotropic etch technique used is reactive only to the second
dielectric layer 34 and not the first dielectric layer 35. In an
alternate embodiment to that in FIG. 7B, FIG. 7C shows a process
step where the anisotropic etch process etches both the second
dielectric material layer 34 and first dielectric material layer
35. Finally, after the steps in either FIG. 7B or FIG. 7C, in FIG.
7D, an isotropic etch is then performed to form cavity 43 in first
dielectric layer 35. The isotropic etch chosen has little or no
reaction to second dielectric layer 34 but is highly reactive to
first dielectric layer 35. The fluid feed slot filler is then
etched using either a solvent or dry ash to open the fluid feed
slots.
[0038] While many different reentrant orifice shapes have been
shown, other reentrant shapes are possible using the aforementioned
techniques and fall within the spirit and scope of the
invention.
[0039] The invention addresses the need of tighter fluid jet
directional control and smaller drop volume for finer resolution
required for vibrant clear photographic printing. In addition, the
invention simplifies manufacturing of the printhead, which lowers
the cost of production, enables high volume run rates and increases
the quality, reliability and consistency of the printheads. The
invention uses existing semiconductor processing equipment and
materials to create a precise reentrant shaped orifice from any of
a number of graded dielectric materials utilizing isotropic and
anisotropic etching processes. The preferred embodiment, and its
alternative embodiments of the invention, demonstrate that unique
orifice shapes can be created to address additional concerns or to
take advantage of different properties of the fluid expelled from
the printhead.
* * * * *