U.S. patent application number 09/777875 was filed with the patent office on 2001-08-09 for single-substrate-heat-treating apparatus for semiconductor process system.
This patent application is currently assigned to TOKYO ELECTRON LIMITED. Invention is credited to Hasei, Masaaki, Okase, Wataru.
Application Number | 20010012604 09/777875 |
Document ID | / |
Family ID | 27338709 |
Filed Date | 2001-08-09 |
United States Patent
Application |
20010012604 |
Kind Code |
A1 |
Okase, Wataru ; et
al. |
August 9, 2001 |
Single-substrate-heat-treating apparatus for semiconductor process
system
Abstract
A heat-treating apparatus is arranged to perform a reforming
process and a crystallizing process for tantalum oxide deposited on
a semiconductor wafer. The apparatus includes a worktable with a
heater incorporated therein. Under the worktable, there is a
heat-compensating member formed of a thin plate and having a
counter surface facing the bottom surface of the worktable along
the periphery. The counter surface is formed of a mirror surface
having a surface roughness of Rmax=25 .mu.m or less. Heat rays and
radiant heat are reflected by the counter surface and applied to
the periphery of the worktable, thereby compensating the periphery
for heat loss.
Inventors: |
Okase, Wataru;
(Sagamihara-shi, JP) ; Hasei, Masaaki;
(Tsukui-gun, JP) |
Correspondence
Address: |
OBLON SPIVAK MCCLELLAND MAIER & NEUSTADT PC
FOURTH FLOOR
1755 JEFFERSON DAVIS HIGHWAY
ARLINGTON
VA
22202
US
|
Assignee: |
TOKYO ELECTRON LIMITED
3-6 Akasaka 5-chome, Minato-ku
Tokyo
JP
107-8481
|
Family ID: |
27338709 |
Appl. No.: |
09/777875 |
Filed: |
February 7, 2001 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
09777875 |
Feb 7, 2001 |
|
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|
09410024 |
Oct 1, 1999 |
|
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|
6228173 |
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Current U.S.
Class: |
432/86 |
Current CPC
Class: |
C23C 16/56 20130101;
C23C 14/083 20130101 |
Class at
Publication: |
432/86 |
International
Class: |
F27D 015/00 |
Foreign Application Data
Date |
Code |
Application Number |
Oct 12, 1998 |
JP |
10-304782 |
Dec 11, 1998 |
JP |
10-375151 |
Dec 11, 1998 |
JP |
10-375152 |
Claims
1. A single-substrate-heat-treating apparatus for a semiconductor
process system, comprising: an airtight process chamber; a
worktable arranged within said process chamber and having a top
surface configured to place a target substrate thereon; an exhaust
mechanism configured to exhaust said process chamber; a supply
mechanism configured to supply a process gas into said process
chamber; a heating mechanism configured to heat said target
substrate placed on said worktable; and a heat-compensating member
having a counter surface facing a bottom surface of said worktable
along a periphery of said bottom surface.
2. The apparatus according to claim 1, wherein said heating
mechanism comprises a heater arranged in said worktable.
3. The apparatus according to claim 1, wherein said counter surface
is formed of a mirror surface having a surface roughness of Rmax=25
.mu.m or less.
4. The apparatus according to claim 3, wherein there is a distance
of less than 100 mm between said counter surface and said bottom
surface.
5. The apparatus according to claim 4, wherein said counter surface
is separated from said bottom surface by a distance of from 1 to 10
mm.
6. The apparatus according to claim 4, wherein said counter surface
is arranged in contact with said bottom surface.
7. The apparatus according to claim 1, wherein said target
substrate, said worktable, and said counter surface have a
substantially circular shape, a circular shape, and a ring shape,
respectively.
8. The apparatus according to claim 7, wherein said counter surface
has an inner diameter larger than a radius of said worktable and
smaller than a diameter of said worktable, and an outer diameter
larger than said diameter of said worktable.
9. The apparatus according to claim 7, wherein said counter surface
has an inner diameter smaller than a diameter of said target
substrate, and an outer diameter larger than said diameter of said
target substrate.
10. The apparatus according to claim 1, wherein said
heat-compensating member comprises a metal plate, and said counter
surface is defined by a surface of said metal plate.
11. The apparatus according to claim 1, wherein said supply
mechanism comprises a shower head including an outside pipe having
a ring shape with a diameter larger than a diameter of said target
substrate, and inside pipes connected to an inside of said outside
pipe and combined to form a lattice, and wherein said inside pipes
are provided with first spurting holes for spouting said process
gas downward, and part of said inside pipes defining a central
opening of said shower head are provided with second spurting holes
for spouting said process gas inward in a horizontal direction.
12. The apparatus according to claim 1, further comprising a
rectifying plate arranged to partition an inner space of said
process chamber and provided with through holes, and a seal plate
forming an airtight seal between said worktable and said rectifying
plate.
13. The apparatus according to claim 1, wherein said process gas
contains oxygen atoms to perform a reforming process for removing
organic impurities contained in a thin film arranged on said target
substrate.
14. The apparatus according to claim 13, further comprising an
exciting mechanism configured to excite said process gas so as to
generate active oxygen atoms to be supplied to said thin film.
15. The apparatus according to claim 14, wherein said exciting
mechanism includes an ultraviolet source configured to irradiate
said process gas with ultraviolet rays within said process
chamber.
16. A single-substrate-heat-treating apparatus for a semiconductor
process system, comprising: an airtight process chamber; a
worktable arranged within said process chamber and having a top
surface configured to place a target substrate thereon; an exhaust
mechanism configured to exhaust said process chamber; a supply
mechanism configured to supply a process gas into said process
chamber; and a heating mechanism configured to heat said target
substrate placed on said worktable; wherein said supply mechanism
comprises a shower head including an outside pipe having a ring
shape with a diameter larger than a diameter of said target
substrate, and inside pipes connected to an inside of said outside
pipe and combined to form a lattice, and wherein said inside pipes
are provided with first spurting holes for spouting said process
gas downward, and part of said inside pipes defining a central
opening of said shower head are provided with second spurting holes
for spouting said process gas inward in a horizontal direction.
17. The apparatus according to claim 16, further comprising a
rectifying plate arranged to partition an inner space of said
process chamber and provided with through holes, and a seal plate
forming an airtight seal between said worktable and said rectifying
plate.
18. The apparatus according to claim 16, wherein said process gas
contains oxygen atoms to perform a reforming process for removing
organic impurities contained in a thin film arranged on said target
substrate.
19. The apparatus according to claim 18, further comprising an
exciting mechanism configured to excite said process gas so as to
generate active oxygen atoms to be supplied to said thin film.
20. The apparatus according to claim 19, wherein said exciting
mechanism includes an ultraviolet source arranged above said shower
head and outside said process chamber to irradiate said process gas
with ultraviolet rays within said process chamber, and said inside
pipes consist essentially of a material transparent to ultraviolet
rays.
Description
BACKGROUND OF THE INVENTION
[0001] The present invention relates to a
single-substrate-heat-treating apparatus for a semiconductor
process system, and particularly, to a
single-substrate-heat-treating apparatus for performing a reforming
process for removing inorganic impurities contained in a thin film
formed on a target substrate and for performing a crystallizing
process for crystallizing the thin film. The term "semiconductor
process" used herein includes various kinds of processes which are
performed to manufacture a semiconductor device or a structure
having wiring layers, electrodes, and the like to be connected to a
semiconductor device, on a target substrate, such as a
semiconductor wafer or an LCD (Liquid Crystal Display) substrate,
by forming semiconductor layers, insulating layers, and conductive
layers in predetermined patterns on the target substrate.
[0002] In the manufacturing process of a semiconductor device, a
film forming process and a pattern etching process are repeatedly
applied to a semiconductor wafer. The requirements for the film
forming process have become stricter in recent years in accordance
with increases in the density and in the degree of integration of
the semiconductor devices. For example, a further decrease in
thickness and higher insulating properties are required even for a
very thin insulating film such as an insulating film included in a
capacitor or a gate insulating film.
[0003] A silicon oxide film or a silicon nitride film is widely
used as such an insulating film. However, a metal oxide film such
as a tantalum oxide (Ta.sub.2O.sub.5) film has come to be used in
recent years as an insulating film exhibiting further improved
insulating properties. Such a metal oxide film can be formed by an
MOCVD (Metal Organic Chemical Vapor Deposition) method, in which an
organometallic compound is gasified for deposition of the metal.
The insulating properties of the metal oxide film can be further
improved by applying a reforming process to the surface of the
metal oxide film after deposition.
[0004] In the process of forming a tantalum oxide film, at first,
an amorphous tantalum oxide film is deposited on a semiconductor
wafer, using a CVD apparatus. Then, the wafer is transferred into a
heat-treating apparatus for reformation, where the amorphous
tantalum oxide film is subjected to a reforming process. Then, the
wafer is transferred into a heat-treating apparatus for
crystallization, where the tantalum oxide film is crystallized by
means of annealing.
[0005] In the reforming process, the wafer having the tantalum
oxide film formed thereon is put under an atmosphere of a
reduced-pressure containing ozone. Ozone is irradiated with
ultraviolet rays emitted from a mercury lamp so as to generate
active oxygen atoms. The organic impurities having C--C bonds, etc.
and contained in the tantalum oxide film are decomposed by the
active oxygen atoms so as to be removed from the tantalum oxide
film. As a result, the insulating properties of the tantalum oxide
film are improved. The reforming process is carried out at a
temperature lower than the crystallizing temperature, e.g., at
about 425.degree. C., in order to allow the tantalum oxide film to
maintain its amorphous state.
[0006] In the crystallizing process, the tantalum oxide film is
heated within the heat-treating apparatus in the presence of 02 gas
to a temperature higher than the crystallizing temperature, e.g.,
to about 700.degree. C. By this annealing process, the tantalum
oxide film is crystallized and the density thereof is increased in
the molecule level, with the result that the insulating properties
of the tantalum oxide film are further improved.
[0007] Jpn. Pat. Appln. KOKAI Publication No. 10-79377 (U.S. patent
application Ser. No. 08/889,590) discloses a cluster-tool-type film
forming system in which a CVD apparatus, a reforming apparatus and
a crystallizing apparatus are connected to each other via a common
transfer chamber. The cluster-tool-type film forming system allows
the through-put to be increased.
[0008] The heat-treating apparatus for performing the reforming or
crystallizing process is constituted as a 5
single-substrate-treating type in which wafers are treated or
processed one by one in a process chamber. The process chamber of
the single-substrate-heat-treating apparatus has a side wall used
in a cold wall state, and the periphery of a worktable tends to
have a temperature lower than the center of the worktable, because
the periphery of the worktable is closer to the side wall than the
center of the worktable is, and radiates heat more than the center
of the worktable does. As a result, the planar uniformity of the
temperature on a wafer during a heat-treatment is lowered, and thus
the planar uniformity of the process is also lowered.
[0009] Incidentally, a heat-treating apparatus of the type, in
which a process gas is supplied from a shower head, generally
causes the process gas to be spouted downward from the shower head,
flow diagonally downward and spread to the periphery of the wafer.
Further, the process gas tends to increase its flowing speed at the
periphery of the wafer and thus stays there for a shorter period of
time. As a result, the density of the process gas becomes thin on
the center and periphery of the wafer, and thus the processed
amount on the center and periphery of the wafer is less than that
on the intermediate portion of the wafer.
[0010] The above described problem is more unacceptable, with an
increase in wafer size from 6 through 8 to 12 inches. Further, the
above describe problem is common to all the heat-treatment
including film deposition process, diffusion process, and the like,
as well as the reforming process and the crystallizing process.
BRIEF SUMMARY OF THE INVENTION
[0011] An object of the present invention is to provide a
single-substrate-heat-treating apparatus in which the planer
uniformity of the temperature on a target substrate is improved by
a simple structural change, so that a process can be performed with
a high planer uniformity.
[0012] Another object of the present invention is to provide a
single-substrate-heat-treating apparatus in which the flow of a
process gas in a process chamber is improved by a simple structural
change, so that a process can be performed with a high planer
uniformity.
[0013] According to a first aspect of the present invention, there
is provided a single-substrate-heattreating apparatus for a
semiconductor process system, comprising:
[0014] an airtight process chamber;
[0015] a worktable arranged within the process chamber and having a
top surface configured to place a target substrate thereon;
[0016] an exhaust mechanism configured to exhaust the process
chamber;
[0017] a supply mechanism configured to supply a process gas into
the process chamber;
[0018] a heating mechanism configured to heat the target substrate
placed on the worktable; and
[0019] a heat-compensating member having a counter surface facing a
bottom surface of the worktable along a periphery of the bottom
surface.
[0020] According to a second aspect of the present invention, there
is provided a single-substrate-heat-treating apparatus for a
semiconductor process system, comprising:
[0021] an airtight process chamber;
[0022] a worktable arranged within the process chamber and having a
top surface configured to place a target substrate thereon;
[0023] an exhaust mechanism configured to exhaust the process
chamber;
[0024] a supply mechanism configured to supply a process gas into
the process chamber; and
[0025] a heating mechanism configured to heat the target substrate
placed on the worktable;
[0026] wherein the supply mechanism comprises a shower head
including an outside pipe having a ring shape with a diameter
larger than a diameter of the target substrate, and inside pipes
connected to an inside of the outside pipe and combined to form a
lattice, and wherein the inside pipes are provided with first
spurting holes for spouting the process gas downward, and part of
the inside pipes defining a central opening of the shower head are
provided with second spurting holes for spouting the process gas
inward in a horizontal direction.
[0027] Additional objects and advantages of the invention will be
set forth in the description which follows, and in part will be
obvious from the description, or may be learned by practice of the
invention. The objects and advantages of the invention may be
realized and obtained by means of the instrumentalities and
combinations particularly pointed out hereinafter.
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING
[0028] The accompanying drawings, which are incorporated in and
constitute a part of the specification, illustrate presently
preferred embodiments of the invention, and together with the
general description given above and the detailed description of the
preferred embodiments given below, serve to explain the principles
of the invention.
[0029] FIG. 1 is a plan view schematically showing the main part of
a cluster-tool-type film forming system according to an embodiment
of the present invention;
[0030] FIG. 2 is a constitutional view schematically showing the
main part of a heat-treating apparatus according to an embodiment
of the present invention, which may be used in the film forming
system shown in FIG. 1;
[0031] FIG. 3 is a plan view showing a shower head used in the
apparatus shown in FIG. 2;
[0032] FIG. 4 is a perspective view showing a heat-compensating
member used in the apparatus shown in FIG. 2;
[0033] FIG. 5 is a cross-sectional view showing the relationship
between a worktable and a heat-compensating member in a
modification of the apparatus shown in FIG. 2;
[0034] FIG. 6 is a graph showing the result of a comparative
experiment in terms of the temperature on a worktable, between the
apparatus shown in FIG. 2 and a conventional apparatus having no
heat-compensating member;
[0035] FIG. 7 is a constitutional view schematically showing the
main part of a heat-treating apparatus according to another
embodiment of the present invention, which may be used in the film
forming system shown in FIG. 1;
[0036] FIG. 8 is a plan view showing a worktable, a rectifying
plate, and a seal plate used in the apparatus shown in FIG. 7;
[0037] FIG. 9 is a plan view showing a shower head used in the
apparatus shown in FIG. 7;
[0038] FIGS. 10A and 10B are cross-sectional views showing the flow
of a process gas in a conventional apparatus and the apparatus
shown in FIG. 7, respectively;
[0039] FIG. 11 is a plan view showing a modified shower head;
[0040] FIG. 12 is a cross-sectional side view showing the shower
head shown in FIG. 11;
[0041] FIG. 13 is a cross-sectional side view showing the flow of a
process gas where the shower head shown in FIG. 11 is used;
[0042] FIG. 14 is a constitutional view schematically showing the
main part of a CVD apparatus according to an embodiment of the
present invention, which may be used in the film forming system
shown in FIG. 1;
[0043] FIG. 15 is a plan view showing a worktable plate, a spacer,
and a stopper used in the apparatus shown in FIG. 14;
[0044] FIG. 16 is a cross-sectional side view showing a hollow
column, the worktable plate, the spacer, and the stopper used in
the apparatus shown in FIG. 14; and
[0045] FIG. 17 is a cross-sectional perspective view showing the
hollow column, the worktable plate, the spacer, and the clamping
member used in the apparatus shown in FIG. 14.
DETAILED DESCRIPTION OF THE INVENTION
[0046] Embodiments of the present invention will be described
hereinafter with reference to the accompanying drawings. In the
following description, the constituent elements having
substantially the same function and arrangement are denoted by the
same reference numerals, and a repetitive description will be made
only when necessary.
[0047] FIG. 1 is a plan view schematically showing the main part of
a cluster-tool-type film forming system according to an embodiment
of the present invention.
[0048] In the film forming system 1 shown in FIG. 1, two CVD
apparatuses 4 and 6, and two heat-treating apparatuses 8 and 10 are
connected to a common transfer chamber 3. Further, two cassette
chambers 14A and 14B are also connected to the common transfer
chamber 3 for improving the wafer transfer efficiency. A wafer is
transferred among these apparatuses 4, 6, 8, and 10, and the
cassette chambers 14A and 14B through the common transfer chamber
3. For transferring the wafer, an arm mechanism 16 consisting of a
multi-joint arm that can be extended, contracted and swung is
arranged within the common transfer chamber 3.
[0049] The common transfer chamber 3 is connected to the cassette
chamber 14A via a gate valve G1 and to the cassette chamber 14B via
a gate valve G2. The cassette chambers 14A and 14B are provided
with gate doors G3 and G4, respectively, that can be opened or
closed to allow the inner spaces of the cassette chambers 14A and
14B to communicate with the outer working environment. Further, the
common transfer chamber 3 is connected to the CVD apparatuses 4 and
6, and the heat-treating apparatuses 8 and 10 via gate valves G5,
G6, G7 and G8, respectively.
[0050] Each of the common transfer chamber 3 and the cassette
chambers 14A and 14B is of an airtight structure. The cassette
chambers 14A and 14B constitute the wafer load/unload port of the
entire film forming system. A cassette C housing a plurality of
semiconductor wafers is transferred into and taken out of each of
the cassette chambers 14A and 14B through the gate doors G3 and G4
that are opened. Each of the cassette chambers 14A and 14B is
provided with a cassette stage (not shown) that can be moved in a
vertical direction and swung. Further, the cassette chambers 14A
and 14B can be vacuum-exhausted with the cassette C housed
therein.
[0051] Each of the CVD apparatuses 4 and 6 is used for forming an
amorphous metal oxide film, e.g., a tantalum oxide film, on a
target substrate, e.g., a semiconductor wafer, under a vacuum
atmosphere containing an evaporated metal oxide film raw material
and an oxidizing gas. Each of the heat-treating apparatuses 8 and
10 is used for subjecting a metal oxide film successively to a
reforming process by exposing the metal oxide film to active oxygen
atoms under a vacuum atmosphere, and to a crystallizing process by
heating the metal oxide film to a temperature higher than the
crystallizing temperature.
[0052] Each of the apparatuses 4, 6, 8, and 10 and the cassette
chambers 14A and 14B is connected to a gas supply mechanism (not
shown) for purging the inner spaces with an inert gas, e.g.,
N.sub.2 gas, and to a vacuum exhaust mechanism (not shown) for
vacuum-exhausting the inner spaces. The N.sub.2 gas supply to these
apparatuses 4, 6, 8, and 10 and the cassette chambers 14A and 14B,
and the vacuum exhaust of these apparatuses 4, 6, 8, and 10 and the
cassette chambers 14A and 14B can be controlled independently of
each other.
[0053] FIG. 2 is a constitutional view schematically showing the
main part of a heat-treating apparatus 22 according to an
embodiment of the present invention. The apparatus 22 may be used
as each of the heattreating apparatuses 8 and 10 in the film
forming system shown in FIG. 1.
[0054] As shown in FIG. 2, the heat-treating apparatus 22 includes
a cylindrical process chamber 24 made of aluminum. A guide hole 26
for inserting power supply lines is formed at the center of the
bottom 24A of the process chamber 24. A plurality of, e.g., four,
exhaust ports 34 are equidistantly formed on a circle in the
periphery of the bottom 24A of the process chamber 24. The exhaust
ports 34A are connected to a common vacuum exhaust mechanism 32
including vacuum pumps, such as a turbo-molecular pump 28 and a
dray pump 30, so as to make it possible to vacuum-exhaust the inner
space of the process chamber 24.
[0055] A wafer-transfer port 3A is formed in the side wall of the
process chamber 24. The common transfer chamber 3, which is formed
of a load lock chamber that can be vacuum-exhausted, is connected
to the port 3A with a gate valve G interposed therebetween. The
semiconductor wafer W is transferred into the process chamber 24
through the common transfer chamber 3. As described before, an
N.sub.2 gas supply mechanism (not shown) for the purging purpose is
connected to each of the process chamber 24 and the common transfer
chamber 3.
[0056] A worktable 36 made of a nonconductive material, e.g.,
alumina, and having a circular disk-like shape is arranged within
the process chamber 24. A substantially circular semiconductor
wafer W as a target substrate can be placed on the worktable 36. A
leg portion 38 formed of a hollow cylinder is integratedly formed
at the center of the bottom of the worktable 36 and extends
downward. The lower end of the leg portion 38 is arranged to
surround the guide hole 26 in the bottom 24A of the process chamber
24 and is airtightly connected and fixed to the bottom 24A by bolts
42 with a seal member 40, such as an O-ring, interposed
therebetween. Consequently, the inside of the hollow leg portion 38
communicates with the outside of the process chamber 24, and is
airtightly isolated from the inside of the process chamber 24.
[0057] A resistance heating body 44 made of carbon and coated with,
for example, SiC is embedded in the worktable 36 so as to heat the
semiconductor wafer W placed thereon to a desired temperature. A
thin electrostatic chuck 46 made of a ceramic material is arranged
on the worktable 36. An electrode 45 formed of a copper plate or
the like is buried in the electrostatic chuck 46. The wafer W is
attracted and held on top of the worktable 36 by Coulomb's force
generated by the electrostatic chuck 46.
[0058] A backside gas, such as He gas, is supplied between the
bottom of the wafer W and the surface of the electrostatic chuck
46, so that the heat conductivity to the wafer W is improved, and
film deposition on the bottom of the wafer W is prevented. In place
of the electrostatic chuck 46, a mechanical clamp may be
employed.
[0059] The resistance heating body 44 is connected to a lead line
48 for supplying electricity, which is insulated from the members
around it. The lead line 48 is lead out to the outside of the
process chamber 24 through the cylindrical leg portion 38 and the
guide hole 26, without being exposed to the inside of the process
chamber 24, and is connected to a power supply section 52 though a
switch 50. The electrode 45 of the electrostatic chuck 46 is
connected to a lead line 54 for supplying electricity, which is
insulated from the members around it. The lead line 54 is lead out
to the outside of the process chamber 24 through the cylindrical
leg portion 38 and the guide hole 26, without being exposed to the
inside of the process chamber 24, and is connected to a
high-voltage DC power supply 58 though a switch 56.
[0060] A plurality of holes 60 are formed at positions on the
periphery of the worktable 36 to penetrate the worktable 36, and
lifter pins 62 are arranged in the holes 60 to be vertically
movable. When the wafer W is transferred, the wafer W is moved in a
vertical direction by an elevating mechanism (not shown) through
the lifter pins 52. Generally, three lifter pins 62 are arranged to
correspond to the periphery of the wafer W.
[0061] Below the worktable 36, there is a heat-compensating member
66 including a counter surface 64 of a ring shape which faces the
bottom surface 36A of the worktable 36 along the periphery of the
bottom surface 36A. Specifically, as shown in FIG. 4, the
heat-compensating member 66 includes a thin ring plate 68 made of a
metal, such as stainless steel, and having a thickness of from 2 to
3 mm. The thin plate 68 is fixed to the leg portion 38 by a support
frame 70 of, e.g., stainless steel. In place of a metal, e.g.,
stainless steel, the thin plate 68 may be formed of another
heat-resistant and corrosion-resistant material, such as a ceramic,
e.g., Al.sub.2O.sub.3, an opaque quartz, and the like.
[0062] The distance between the top surface, i.e., the counter
surface 64, of the thin plate and the bottom surface 36A of the
worktable 36 is set to be less than 100 mm, preferably from 1 to 10
mm. The counter surface 64 is finished as a mirror surface having a
surface roughness of Rmax (maximum height) 25 .mu.m or less,
preferably Rmax from 0.8 to 6.3 .mu.m. Heat rays and radiant heat
are reflected by the mirror-like counter surface 64 and applied to
the periphery of the worktable 36, thereby compensating the
periphery for heat loss.
[0063] As shown in FIG. 5, the counter surface 64 of the thin plate
68 may be arranged in contact with the bottom surface 36A of the
worktable 36. Even in this case, small microscopic gaps are formed
between the surfaces 64 and 36A of the thin plate 68 and the
worktable 36 which have been fabricated independently of each
other. Accordingly, heat emitted from the periphery of the
worktable 36 is reflected by the counter surface 64, thereby
compensating the periphery for heat loss.
[0064] The counter surface 64 has an inner diameter D1 which is
larger than the radius of the worktable 36 and smaller than the
diameter of the worktable 36, and an outer diameter D2 which is not
less than the diameter of the worktable 36. In other words, the
counter surface 64 has an inner diameter D1 which is smaller than
the diameter of the wafer W, and an outer diameter D2 which is
larger than the diameter of the wafer W. With these dimensions, the
periphery of the worktable 36 is efficiently supplied with heat and
is compensated for heat loss. Specifically, where the diameter of
the worktable is set at 26 cm to correspond to 8-inch wafers, the
inner and outer diameters D1 and D2 are set at about 17 cm and 26
cm, respectively.
[0065] A shower head 72, made of a material, such as quartz, which
allows ultraviolet rays to pass through by 90% or more
(substantially transparent), is arranged near the ceiling of the
process chamber 24. As shown in FIG. 3, the shower head 72 includes
an outside pipe 74 connected to a line pipe 73 and having a ring
shape with a diameter larger than the diameter of the wafer W, and
inside pipes 76 connected to the inside of the outside pipe 74 and
consisting of four vertical pipes and four horizontal pipes
combined to form a lattice. The tube-inner diameters of the outside
pipe 74 and the inside pipes 76 are set at about 16 mm and 4.35 mm,
respectively. A large number of gas spurting holes 80 each having a
diameter of about 0.3 to 0.5 mm are equidistantly formed on the
lower side of the inside pipes 76, for spouting a process gas
downward.
[0066] It is desirable for the projected surface area of the inside
pipes 76 on the wafer W placed on the worktable 36 to be smaller
than 20% of the area of the wafer surface. In this case, the wafer
surface can be irradiated directly with ultraviolet rays UV, which
are to be described later, running through the clearances of the
lattice of the inside pipes 76.
[0067] The line pipe 73 for introducing a process gas into the
shower head 72 airtightly extends through the side wall of the
process chamber so as to be led to the outside. The line pipe 73 is
connected to a gas source 71 via a mass flow controller (not
shown). A process gas such as ozone gas is introduced into the
shower head 72 through the line pipe 73.
[0068] A circular aperture 82 set larger than the wafer diameter is
formed in a ceiling of the process chamber 24. A circular
transmitting window 84 made of a material transparent to
ultraviolet rays, such as quartz, is airtightly mounted in the
aperture 82 by a fixing frame 88 using a seal member 86 such as an
O-ring. The transmitting window 84 has a thickness of, for example,
20 mm to enable the window 84 to withstand atmospheric
pressure.
[0069] An UV radiating mechanism 90 for radiating ultraviolet rays
toward the process chamber 24 is arranged above the transmitting
window 84. The process gas of ozone is irradiated with the
ultraviolet rays so as to generate active oxygen atoms.
[0070] To be more specific, the UV radiating mechanism 90 includes
a plurality of, e.g., seven, cylindrical ultraviolet lamps 92. The
ultraviolet lamps 92 are arrayed outside the quartz window 84 to
face the mount surface of the worktable 36 in parallel thereto. The
number of lamps 92 may be increased to attain the necessary
intensity of ultraviolet rays. Each of the ultraviolet lamps 92
used may be, for example, a cold-cathode ray tube, which emits a
lot of ultraviolet rays mainly having a wavelength of 254 nm, with
a low power of about 20W.
[0071] All the ultraviolet lamps 92 are covered with a casing 94
having a dome-shaped ceiling. The dome-shaped ceiling is formed as
a light reflector for reflecting downward ultraviolet rays which
have been radiated upward from the lamps 92.
[0072] An explanation will be given as to how to perform heat
treatments by using the apparatus shown in FIG. 2.
[0073] First, a semiconductor wafer W having a metal oxide film,
such as a tantalum oxide (Ta.sub.2O.sub.5) film, formed thereon as
an insulating film is introduced from the common transfer chamber
or load lock chamber 3 through the port 3A into the process chamber
24 in a vacuum condition. Then, the wafer W is placed on the
worktable 36 and is attracted and held on the worktable 36 by
Coulomb's force of the electrostatic chuck 46.
[0074] The wafer W is maintained at a predetermined process
temperature by the resistance heating body 44. Also, a
predetermined process pressure is maintained within the process
chamber 24 by supplying a process gas containing ozone into the
process chamber 24 through the shower head 72 while
vacuum-exhausting the process chamber 24. Under this condition, a
reforming process and a crystallizing process are started as
described previously with reference to the film forming system
shown in FIG. 1.
[0075] The process gas containing ozone introduced into the shower
head 72 flows first through the outside ring pipe 74 and, then,
into the inside pipes 76. Then, the process gas is supplied into
the process chamber 24 through a large number of the spurting holes
80 made in the inside pipes 76. This particular arrangement makes
it possible to supply the process gas uniformly to the wafer
surface.
[0076] At the same time, a large amount of ultraviolet rays UV are
emitted from the ultraviolet lamps 92. The ultraviolet rays UV are
directly or indirectly transmitted through the transmitting window
84 made of quartz, while part of them are reflected by the
reflector of the casing 94, so as to enter the process chamber 24
maintained at a predetermined vacuum pressure. Further, the
ultraviolet rays UV pass through the shower head 72 made of quartz
so that the process gas containing ozone as a main component is
irradiated with the ultraviolet rays within the process chamber
24.
[0077] Ozone is irradiated with the ultraviolet rays UV and
generates a large amount of active oxygen atoms. The active oxygen
atoms act on the metal oxide film and dissociate organic impurities
such as C--C bonds and hydrocarbons contained in the metal oxide
film so as to reform the metal oxide film. Within the heat process
chamber 24, the wafer W having the tantalum oxide film formed
thereon is heated under an atmosphere including ultraviolet rays
and ozone to a low temperature, such as 450.degree. C., to perform
a reforming process. Then, the wafer W is heated to a temperature
not lower than the crystallizing temperature of tantalum oxide,
followed by lowering the temperature in 60 seconds. As a result,
reforming and crystallizing processes of the tantalum oxide film
are performed successively.
[0078] Since the inner space of the process chamber 24 is held at a
vacuum or reduced pressure, the probability of collision of the
generated active oxygen atoms against gaseous atoms or gaseous
molecules is very low. In addition, since the ultraviolet rays UV
are less likely to be absorbed by gaseous molecules, the density of
the active oxygen atoms is increased so as to perform the process
promptly. By this process, the insulating properties of the metal
oxide film can be rapidly markedly improved.
[0079] The process pressure should be set to fall within a range of
1 to 600 Torr, e.g., at about 30 Torr. Where the process pressure
does not fall within the range noted above, the heat process
proceeds slowly or cannot be performed sufficiently, with the
result that the insulation breakdown voltage of the metal oxide
film is lowered. The process temperature of the reforming process
should be set to fall within a range of 320 to 700.degree. C.,
e.g., at about 450.degree. C. Where the wafer temperature is lower
than 320.degree. C., the insulation breakdown voltage of the metal
oxide film is insufficient. Where the wafer temperature is higher
than 700.degree. C., the metal oxide film is crystallized so as to
hinder a sufficient progress of the reformation. On the other hand,
the process temperature of the crystallizing process should be set
to fall within a range of 700 to 800.degree. C., e.g., 750.degree.
C.
[0080] When heat treatments are performed for the reforming and
crystallizing processes, the side wall of the process chamber 24 is
in a cold wall state, and the periphery of the worktable 36 close
to the side wall loses temperature more than the center of the
worktable 36 does. Consequently, the periphery of the worktable 36
tends to have a temperature lower than that of the center of the
worktable 36.
[0081] However, in the apparatus according to the present
invention, the heat-compensating member 66 formed of, e.g., the
stainless steel thin plate 68 is arranged to correspond to the
periphery of the bottom of the worktable 36. Heat rays and radiant
heat discharged from the worktable 36 are reflected by the counter
surface 64 and returned to the worktable 36. Besides, the thin
plate 68 is heated itself, and radiant heat from the thin plate 68
is applied to the worktable 36. As a result, the periphery of the
worktable 36 is thermally compensated so that the planar uniformity
of the wafer temperature is improved. Where the counter surface 64
of the thin plate 68 is finished as a mirror surface, heat rays are
efficiently reflected. As a result, the periphery of the worktable
36 is supplied with an increased amount of heat so that the planar
uniformity of the wafer temperature is further improved.
[0082] As shown in FIG. 5, the thin plate 68 may be arranged in
contact with the periphery of the bottom of the worktable 36,
thereby also attaining the above described effects. In this case,
the thin plate 68 may have a thickness of 2 to 10 mm to have a
larger heat capacity, so that the heat supply due to heat
conduction is increased.
[0083] [Experiment 1]
[0084] A comparative experiment was performed in terms of the
temperature on a worktable, between an apparatus provided with the
heat-compensating member 66 shown in FIG. 2 according the present
invention, and a conventional apparatus provided with no
heat-compensating member. In this experiment, the diameter of a
wafer W was set at 200 mm, the diameter of the worktable 36 at 260
mm, the inner and outer diameters D1 and D2 of the thin plate 68 at
160 mm and 260 mm, respectively, and the distance between the
counter surface 64 and the bottom surface 36A of the worktable 36
at 2 to 3 mm. The temperature of the worktable was set at
445.degree. C. and the pressure in the process chamber 24 at 30
Torr. The temperature of the wafer was measured at the central
point and at four points (upper, lower, left and right points) on
the periphery.
[0085] FIG. 6 is a graph showing the result of the comparative
experiment. In FIG. 6, measured points (central point DP, upper
point UP, lower point DP, left point LP, and right point RP) are
schematically shown. In FIG. 6, lines L1 and L2 denote the result
of the apparatus of the present invention and the conventional
apparatus, respectively. As shown in this graph, the conventional
apparatus resulted in a thermal distribution having a temperature
difference as large as about 11.degree. C. at most between the
central point CP and the peripheral portion (upper point UP, lower
point DP, left point LP, and right point RP). On the other hand,
the apparatus of the present invention resulted in a thermal
distribution having a temperature difference as small as about 6C
at most. According to a calculation, the conventional apparatus
resulted in a planer uniformity of the wafer temperature with a
large difference of .+-.5.6.degree. C., while the apparatus of the
present invention resulted in an improved planer uniformity of the
wafer temperature with a small difference of .+-.3.2.degree. C.
[0086] FIG. 7 is a constitutional view schematically showing the
main part of a heat-treating apparatus 22M according to another
embodiment of the present invention. The apparatus 22M may be used
as each of the heat-treating apparatuses 8 and 10 in the film
forming system shown in FIG. 1.
[0087] The heat-treating apparatus 22M includes, in addition to the
structure of the apparatus 22 shown in FIG. 2, a rectifying plate
96 arranged around a worktable 36 to partition the space in the
process chamber 24. As shown in FIG. 8, the rectifying plate 96 is
a ring plate made of a corrosion-resistant material, such as
stainless steel, and provided with a number of circular through
holes 96A arrayed in the angular direction at certain intervals.
The rectifying plate 96 is connected at its outer periphery to the
inner surface of the process chamber 24, so that it is fixed at a
predetermined position. The atmosphere in the process field
accommodating the wafer W is substantially uniformly
vacuum-exhausted through the holes 96A.
[0088] A seal plate 97 is arranged to airtightly seal a ring
portion having a width of about 10 mm between the worktable 36 and
the rectifying plate 96. The seal plate 97 is also a ring plate
made of a corrosion-resistant material, such as stainless steel.
The seal plate 97 is supported along with a thin plate 68 of a
heat-compensating member 66 by a leg portion 38 through a common
stainless steel support frame 70. The seal plate 97 may be
integrally connected to the rectifying plate 96, instead of being
attached to the support frame 70.
[0089] Further, the heat-treating apparatus 22M includes a shower
head 72M different from the shower head 72 shown in FIG. 3. As
shown in FIG. 9, the shower head 72M includes an outside pipe 74
connected to a line pipe 73 and having a ring shape with a diameter
larger than the diameter of the wafer W, and inside pipes 76
connected to the inside of the outside pipe 74 and consisting of
four vertical pipes and four horizontal pipes combined to form a
lattice. The tube-inner diameters of the outside pipe 74 and the
inside pipes 76 are set at about 16 mm and 4.35 mm,
respectively.
[0090] A large number of first spurting holes 80A are equidistantly
formed on the lower side of that part of the inside pipes 76 except
for the part defining a rectangular opening 78 at the center of the
shower head 72M, for spouting a process gas downward. Second
spurting holes 80B are formed on the side, facing the center, of
the part of the inside pipes 76 defining the rectangular opening 78
at the center of the shower head 72M, for spouting the process gas
in a horizontal direction toward the center. The spouting holes 80A
and 80B each have a diameter of about 0.3 to 0.5 mm. The supply
amount of the process gas at the center of the wafer is increased
as compared with the shower head 72 shown in FIG. 3, by the part of
the process gas being spouted in the horizontal directions toward
the center.
[0091] The flow of a process gas in the heat-treating apparatus 22M
shown in FIG. 7 and a conventional apparatus will be explained,
with reference to FIGS. 10A and 10B. FIGS. 10A and 10B
schematically show the flow of a process gas in the conventional
apparatus and the apparatus of the present invention,
respectively.
[0092] As shown in FIG. 10A, in the conventional apparatus, all the
process gas is spouted vertically downward from a shower head SH,
and flows diagonally downward to gradually spread toward the
periphery of a wafer under the influence of vacuum-exhaustion.
Consequently, a region surrounded by a broken line RA directly
above the center of wafer comes to have a relatively low
concentration of the process gas. Further, although most of the
process gas diffusing onto the periphery of the wafer flows through
holes 96A formed in a rectifying plate 96, some of the process gas
flows downward through the gap between a worktable 36 and the
rectifying plate 96. Consequently, the process gas flows rapidly
and stays for a shorter period of time in a region surrounded by a
broken line RB on the periphery of the wafer. As a result, the
concentration of the process gas becomes low at the center and the
periphery of the wafer, and thus the processed amount at the center
and the periphery is lower than that at the intermediate portion of
the wafer.
[0093] On the other hand, as shown in FIG. 10B, in the apparatus of
the present invention, the process gas is partly spouted
horizontally toward the center from the spouting holes 80B formed
on the central part of the inside pipes 76, as indicated by flows
G1, as well as being spouted vertically downward from the inside
pipes 76 of the shower head 72M. The flows G1 of the process gas
spouted toward the center from opposite parts of the inside pipes
76 hit each other, and form flows G2 flowing vertically downward to
be supplied to the center of the wafer.
[0094] Accordingly, the structure shown in FIG. 10B does not create
the region RA shown in FIG. 10A, having a low concentration of the
process gas at the center of the wafer W. The gas of the flows G2
diffusing on the wafer surface toward the periphery is combined
with part of the process gas spouted vertically downward from the
downward spouting holes 80A, and further flows toward the
peripheral edge of the wafer W.
[0095] As shown in FIG. 10B, the apparatus of the present invention
has the seal ring plate 92 completely sealing the portion between
the worktable 36 and the rectifying plate 96. With this
arrangement, all the process gas having arrived at the peripheral
edge of the wafer W is caused to flow downward through the holes
96A of the rectifying plate 96. Consequently, the flow rate of the
process gas on the periphery of the wafer does not increase so
much, but is maintained at almost the same as that on the
intermediate portion of the wafer.
[0096] Accordingly, the structure shown in FIG. 10B does not create
the region RB shown in FIG. 10A, where the process gas flows
rapidly.
[0097] For this reason, according to the heat-treating apparatus
22M shown in FIG. 7, the planar uniformity of a predetermined
process, for example, reforming process, can be greatly improved by
the synergistic effect of the modified shower head 72M and the seal
plate 97. Even where either the shower head 72M or the seal plate
97 is adopted, the planar uniformity of a predetermined process can
be improved to some extent.
[0098] [Experiment 2]
[0099] A comparative experiment was performed between an apparatus
of the present invention having the seal plate 97 and the shower
head 72 shown in FIG. 3 in place of the shower head 72M shown in
FIG. 7, and a conventional apparatus having no seal plate 97. In
this experiment, a reforming process on the surface of a wafer was
performed, with a setting target thickness of 15 .ANG.. As a
result, the variation in the reforming process, using the
conventional apparatus, was about .+-.2 to 3 .ANG.. On the other
hand, the variation in the reforming process, using the apparatus
of the present invention, was about .+-.1 .ANG., thereby confirming
improvement in the planar uniformity of the process.
[0100] FIGS. 11 and 12 are a plan view and a cross-sectional side
view, respectively, showing a modified shower head 72N.
[0101] Each of the shower heads 72 and 72M shown in FIGS. 3 and 9
consists of the outside ring pipe 74 having a relatively large
tube-diameter, and the inside pipes 76 having a small tube-diameter
and combined to form a lattice. The shower head 72N shown in FIGS.
11 and 12, however, has no inside pipes 76, but consists only of an
outside pipe 74N having a ring shape with a diameter substantially
the same as that of the worktable 36. The dimensions, such as the
ring diameter and the tube diameter, of the outside pipe 74N are
set to be almost the same as those of the shower heads 72 and 72M
shown in FIGS. 3 and 9. A number of spouting holes 80B are formed
on the inside of the outside pipe 74N, for spouting the process gas
in a horizontal direction toward the center. The spouting holes 80B
are arranged at substantially regular intervals in the angular
direction on the ring pipe 74N.
[0102] As shown in FIG. 13, flows G4 of the process gas
horizontally spouted toward the process chamber center from the
spouting holes 80B collide with each other and become concentrated
at the center of the shower head 72N. Since vacuum-exhaustion is
carried out at the lower part of the process chamber, the flows G4
of the process gas turns into a flow G5 flowing vertically downward
from the process chamber center after the collision, and are
supplied to the center of the wafer. Then, the process gas in the
flow G5 diffuses to the periphery from the center of the wafer
substantially in a radiating manner.
[0103] Accordingly, as in the shower head 72M shown in FIG. 9, the
shower head 72N does not create the region RA shown in FIG. 10A,
having a low concentration of the process gas at the center of the
wafer W. Further, since process gas can be passed at substantially
the same flow rate over the entire wafer surface, it is possible to
improve the planar uniformity of the heat treatment, i.e.,
reforming process.
[0104] The heat-treating apparatuses according to the embodiments
of the present invention described with reference to FIGS. 2 to 13
are not limited by wafer sizes, but can be applied to all wafer
sizes, such as 6 inches, 8 inches, 12 inches. Further, although
these embodiments are explained on a heat-treating apparatus for
performing reforming crystallizing processes, the present invention
is applicable to all the single-substrate-heat-treating
apparatuses, such as a film deposition apparatus, a thermally
diffusing apparatus, an annealing apparatus, and an etching
apparatus. Furthermore, the target substrate is not limited to a
semiconductor wafer, but includes a glass substrate, an LCD
substrate, etc.
[0105] FIG. 14 is a constitutional view schematically showing the
main part of a CVD apparatus 130 according to an embodiment of the
present invention. The apparatus 130 may be used as each of the CVD
apparatuses 4 and 6 in the film forming system shown in FIG. 1.
[0106] As shown in FIG. 14, the CVD apparatus 130 includes a
process chamber 132 made of aluminum in the shape of a cylinder or
box. In the process chamber 132, the cylinder-like hollow column
134 is arranged to stand up from the process chamber bottom. The
hollow column 134 is made of a corrosion-resistant material, such
as aluminum. A shelf portion 136 having a ring shape is formed at
an upper position on the inner wall of the cylindrical hollow
column 134 to project slightly inward, e.g., only about 10 mm. A
spacer 138 having a ring shape with the same width as the shelf
portion 136 is mounted on the shelf portion 136, and is fixed to
the shelf portion 136 with screws 140 (see FIGS. 15 and 17).
[0107] The spacer 138 is made of a corrosion-resistant material,
such as stainless steel. However, it is not limited to this, but as
for the material of a spacer 138, any material may be used as long
as it is corrosion-resistant and has less possibility to cause
contamination with metals.
[0108] A circular worktable plate 142 is mounted on top of the
spacer 138 while its periphery is in contact with the inner
periphery of the upper surface of the spacer 138. Specifically, a
leg portion 142A having a ring shape in the plan view and
substantially an L shape in the cross-sectional view is formed at
the periphery of the worktable plate 142. The leg portion 142A is
mounted on the spacer 138 so that the whole of the worktable plate
142 is supported. The worktable plate 142 is made of SiC and has a
thickness of, e.g., about 3 to 4 mm. The diameter of the worktable
plate 142 changes in accordance with the size of a target
substrate, i.e., the semiconductor wafer W, mounted on the
worktable plate 142. For example, when processing an 8 inch wafer,
the diameter of the worktable plate 142 is set at about 24 cm.
[0109] A stopper 144 having a ring shape in the plan view and a
substantially T shape downward projection in the cross-sectional
view is inserted between the periphery of the worktable plate 142
and the top of the hollow column 134. The stopper 144 is fixed to
the shelf portion 136 with screws 146 (see FIG. 17), whereby, the
whole of the worktable plate 142 is fixed to a predetermined
position. The stopper 144 is made of a material the same as that of
the worktable plate 14, i.e., SiC, in this embodiment. The stopper
144 has a thickness such that its upper surface is level with the
upper surface of the worktable plate 142.
[0110] Underneath the worktable plate 142, a plurality of, e.g.,
three, L-shape lifter pins 148 (only two of them are shown in FIG.
14) are arranged so that they stand upward. The lifter pins 148 are
made of a material which allows heat rays to pass through, such as
quartz. The base portions of the lifter pins 148 are connected
through a ring-shape connecting member 150 to an elevating rod 151
which penetrates the process chamber bottom. By moving the
elevating rod 151 up and down, the lifter pins 148 project and
retreat through holes 152 formed in the worktable plate 142.
Specifically, the wafer W is moved up and down by the lifter pins
148 when the wafer W is transferred onto and from the worktable
plate 142. Long holes 154 for allowing the lifter pins 148 to
penetrate therethrough and move up and down are partly formed in
the hollow column 134.
[0111] The lower end of the elevating rod 151 is connected to an
actuator 158. Between the bottom of the process chamber 132 and the
actuator 158, the elevating rod 151 is airtightly surrounded by a
bellows 156 which can be expanded and contracted. With the bellows,
the airtightness in the process chamber 132 is ensured.
[0112] A window 160 made of a heat-ray-transmitting material, such
as quartz, is airtightly arranged at the process chamber bottom
directly under the worktable plate 142. Underneath the window 160,
the box-like heating room 162 is arranged to surround the window
160. In the heating room 162, two or more heating lamps 164 used as
heating means are attached to a rotation stand 166. The upper
surface of the rotation stand 166 is formed as a reflective mirror
surface. The rotation stand 166 is rotated through a rotation shaft
168 by a rotation motor 170 arranged at the bottom of the heating
room 162. Heat rays emitted from the heating lamps 164 are
transmitted through the window 160, and are incident onto the
bottom surface of the worktable plate 147 to heat it.
[0113] Between the upper end of the hollow column 134, and the
inner wall of the process chamber, a ring-like rectifying plate 174
provided with a number of through holes 172 is arranged to surround
the worktable plate 142. A plurality of exhaust ports 176 are
formed in the bottom of the process chamber 132 under the
rectifying plate 174. The exhaust ports 176 are connected through
the exhaust line 178 to a vacuum exhaust mechanism 179 having a
vacuum pump, so that the inside of the process chamber 132 can be
exhausted and set at a vacuum. A gate valve G is arranged on the
side wall of the process chamber 132, so that it is opened and
closed when the wafer is transferred into and out of the process
chamber.
[0114] A shower head 182 is arranged on the ceiling of the process
chamber 132 to face the worktable plate 142, for introducing
process gas into the process chamber 132. Specifically, the shower
head 182 has a head body 184 formed of, e.g., a circular aluminum
box. A gas introduction port 186 is arranged at the top of the head
body 184 for introducing the process gas which has been subjected
to a flow control.
[0115] A distribution plate 192 having a number of distribution
holes 190 is arranged in the head body 184. A number of gas
spouting holes 188 are formed substantially all over a gas spouting
face 184A which is the bottom surface of the head body 184. The
process gas supplied into the head body 184 is uniformly supplied
toward the wafer surface from the gas spouting holes 188.
[0116] An explanation will be give to a CVD method, using the
apparatus shown in FIG. 14.
[0117] At first, the gate valve G on the side wall of the process
chamber 132 is opened, and a semiconductor wafer W is transferred
from the common transfer chamber 3 into the process chamber 132 by
the arm mechanism 16 (see FIG. 1). The lifter pins 148 are moved up
by the elevating rod 151 to receive the wafer W by the lifter pins
148. Then, the lifter pins 148 are moved down by the elevating rod
151 to mount the wafer onto the worktable plate 142.
[0118] Predetermined amounts of a He bubbling gas of a metal
alkoxide, such as Ta(OC.sub.2H.sub.5).sub.5, used as a
filmdeposition gas, and O.sub.2 gas are supplied from process gas
sources (not shown) to the shower head 182, and mixed with each
other therein. The mixed process gas thus formed is uniformly
spouted from the spouting holes 188 on the bottom surface of the
head body 184 into the process chamber 132. At the same time, the
process chamber is vacuum-exhausted from the exhaust port 176 and
is set at a vacuum of, e.g., from about 0.2 to 0.3 Torr.
[0119] The heating lamps 164 in the heating room 162 are driven to
rotate and emit heat energy. The emitted heat rays are transmitted
through the window 160 and radiated onto the bottom surface of the
worktable plate 142 to heat it. Since the worktable plate 142 is as
thin as about several millimeters, it can be heated up quickly, and
thus the wafer W mounted thereon is also heated quickly to a
predetermined temperature. The supplied mixed gas causes a certain
chemical reaction to deposit, e.g., a tantalum oxide film on the
wafer surface. This process is performed at a predetermined
temperature of, e.g., from 250 to 450.degree. C.
[0120] In a conventional apparatus, a film-deposition gas tends to
enter the bottom side of a worktable plate and to allow an
unnecessary film to be deposited on the worktable plate. However,
in the present invention, as shown in FIGS. 14 and 16, the leg
portion 142A of the worktable plate 142 is placed on the shelf
portion 136 with the ring-like spacer 138 interposed therebetween.
Further, the leg portion 142A is pressed and fixed by the ring-like
stopper 144, using the screws 146. Consequently, the outer surfaces
of the members 138, 142, and 144 are brought into very close
contact with each other. In other words, there is little gap formed
between the members 138, 142, and 144, so that all the gas leakage
passages from the process field to the backside of the worktable
plate 142 are substantially completely shut off. As a result, it is
possible to prevent the process gas from entering the backside of
the worktable plate 142 and to prevent an unnecessary film
obstructing heat rays from being deposited on the bottom surface of
the worktable plate 142.
[0121] As described above, since substantially no unnecessary films
are deposited on the bottom surface of the worktable plate 142, the
wafer can be efficiently heated without any temperature
distribution on the wafer. Consequently, the wafer temperature
maintains a high planar uniformity, so that a predetermined
process, i.e., CVD process, can have an improved planer
uniformity.
[0122] [Experiment 3]
[0123] A comparative experiment was performed between the CVD
apparatus shown in FIG. 14, and a conventional CVD apparatus having
no spacer 138 nor stopper 144, under the same conditions of a
film-deposition process. As a result, in the conventional
apparatus, an unnecessary film was deposited on the bottom side of
the worktable after the lapse of a certain process time. On the
other hand, in the apparatus of the present invention, almost no
unnecessary film was deposited on the bottom side of the worktable
142. It was confirmed that the apparatus of the present invention
had better characteristics.
[0124] The heat CVD apparatuses according to the embodiments of the
present invention described with reference to FIGS. 14 to 17 are
not limited by wafer sizes, but can be applied to all wafer sizes,
such as 6 inches, 8 inches, 12 inches. Further, although these
embodiments are explained in a case where the tantalum oxide film,
i.e., a metal oxide film, is deposited, the present invention is
applicable to a process of depositing another metal oxide film of,
e.g., titanium oxide, zirconium oxide, barium oxide, or strontium
oxide, or an insulating film of, e.g., SiO.sub.2 or SiOx.
Furthermore, the target substrate is not limited to a semiconductor
wafer, but includes a glass substrate, an LCD substrate, etc.
[0125] Additional advantages and modifications will readily occur
to those skilled in the art. Therefore, the invention in its
broader aspects is not limited to the specific details and
representative embodiments shown and described herein. Accordingly,
various modifications may be made without departing from the spirit
or scope of the general inventive concept as defined by the
appended claims and their equivalents.
* * * * *