U.S. patent application number 09/748168 was filed with the patent office on 2001-06-28 for method of forming photomask and method of manufacturing semiconductor device.
This patent application is currently assigned to KABUSHIKI KAISHA TOSHIBA. Invention is credited to Goto, Mineo, Hasebe, Shigeru, Ikenaga, Osamu.
Application Number | 20010005619 09/748168 |
Document ID | / |
Family ID | 18502003 |
Filed Date | 2001-06-28 |
United States Patent
Application |
20010005619 |
Kind Code |
A1 |
Hasebe, Shigeru ; et
al. |
June 28, 2001 |
Method of forming photomask and method of manufacturing
semiconductor device
Abstract
Resist film patterns are formed on a light shielding film formed
on a surface of the glass substrate. The resist film patterns cover
regions A and B of the surface of the substrate. Then, using the
resist film patterns as a mask, the light shielding film is
patterned to form the light shielding film pattern in the regions A
and B. The light shielding film pattern formed in region B is used
as a dummy pattern. Then, a further resist film is formed over the
light shielding film patterns of the regions A and B. The resist
film is patterned to provide only a resist film pattern covering
the region A. Thereafter, an etching processing is applied for
removing the light shielding film pattern in the region B using the
resist film pattern as a mask. In this method, the presence of the
dummy pattern is an important feature.
Inventors: |
Hasebe, Shigeru;
(Yokohama-shi, JP) ; Goto, Mineo; (Kawasaki-shi,
JP) ; Ikenaga, Osamu; (Yokohama-shi, JP) |
Correspondence
Address: |
Finnegan, Henderson, Farabow,
Garrett & Dunner, L.L.P.
1300 I Street, N.W.
Washington
DC
20005-3315
US
|
Assignee: |
KABUSHIKI KAISHA TOSHIBA
|
Family ID: |
18502003 |
Appl. No.: |
09/748168 |
Filed: |
December 27, 2000 |
Current U.S.
Class: |
438/487 ;
438/784 |
Current CPC
Class: |
G03F 1/76 20130101; G03F
7/0035 20130101; Y10S 438/926 20130101 |
Class at
Publication: |
438/487 ;
438/784 |
International
Class: |
H01L 021/20; H01L
021/36 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 28, 1999 |
JP |
11-373343 |
Claims
What is claimed is:
1. A method of forming a photomask, comprising the steps of:
successively laminating a light shielding film and a first resist
film on a surface of a transparent substrate; patterning said first
resist film to form a first resist film pattern; etching said light
shielding film with the first resist film pattern used as a mask so
as to form a single light shielding film pattern of said light
shielding film in a form of an independent arrangement pattern and
a plurality of light shielding film patterns of said light
shielding film in a form of a collective arrangement pattern in a
first region of the surface of the transparent substrate and a
dummy pattern of said light shielding film in a second region of
the surface of the transparent substrate; removing the first resist
film pattern; forming a second resist film on the surface of the
transparent substrate to cover said light shielding film patterns
in the first regions and the second regions of the surface of the
transparent substrate; patterning said second resist film to form a
second resist film pattern on the first region of the surface of
the transparent substrate; and removing by etching the dummy
pattern in said second region with the second resist film pattern
used as a mask.
2. The method of forming a photomask according to claim 1, wherein
said light shielding film pattern and said dummy pattern comprise a
chromium film or a translucent phase shift film.
3. The method of forming a photomask according to claim 2, wherein
said translucent phase shift film comprises a light shielding film
made of a chromium compound or a molybdenum silicide compound.
4. The method of forming a photomask according to claim 3, wherein
said chromium compound of the light shielding film is chromium
fluoride.
5. The method of forming a photomask according to claim 3, wherein
said molybdenum silicide compound of the light shielding film is
oxynitride molybdenum silicide.
6. The method of forming a photomask according to claim 1, wherein
said second region has a region in which said light shielding film
is not formed, and an optional value is selected as the covering
ratio in said second region of said light shielding film in
accordance with the etching conditions of said light shielding film
pattern.
7. The method of forming a photomask according to claim 1, further
comprising, the step performed after the step removing by etching
the dummy pattern in said second region, of removing the second
resist film pattern.
8. The method of forming a photomask according to claim 7, wherein
said light shielding film pattern and said dummy pattern comprise a
chromium film or a translucent phase shift film.
9. The method of forming a photomask according to claim 8, wherein
said translucent phase shift film comprises a light shielding film
made of a chromium compound or a molybdenum silicide compound.
10. The method of forming a photomask according to claim 9, wherein
said chromium compound of the light shielding film is chromium
fluoride.
11. The method of forming a photomask according to claim 9, wherein
said molybdenum silicide compound of the light shielding film is
oxynitride molybdenum silicide.
12. The method of forming a photomask according to claim 7, wherein
said second region has a region in which said light shielding film
is not formed, and an optional value is selected as the covering
ratio in said second region of said light shielding film in
accordance with the etching conditions of said light shielding film
pattern.
13. A method of forming a photomask, comprising the steps of:
forming a light shielding film on a surface of a transparent
substrate; forming a first resist film pattern on the light
shielding film; etching said light shielding film with the first
resist film pattern used as a mask so as to form a single light
shielding film pattern of said light shielding film in a form of an
independent arrangement pattern and a plurality of light shielding
film patterns of said light shielding film in a form of a
collective arrangement pattern in a first region of the surface of
the transparent substrate and a dummy pattern of said light
shielding film in a second region of the surface of the transparent
substrate; removing the first resist film pattern; forming a second
resist film pattern on the surface of the transparent substrate to
cover said light shielding film patterns in the first region of the
surface of the transparent substrate; and removing by etching the
dummy pattern in said second region with the second resist film
pattern used as a mask.
14. The method of forming a photomask according to claim 13,
wherein said light shielding film pattern and said dummy pattern
comprise a chromium film or a translucent phase shift film.
15. The method of forming a photomask according to claim 14,
wherein said translucent phase shift film comprises a light
shielding film made of a chromium compound or a molybdenum silicide
compound.
16. The method of forming a photomask according to claim 15,
wherein said chromium compound of the light shielding film is
chromium fluoride.
17. The method of forming a photomask according to claim 15,
wherein said molybdenum silicide compound of the light shielding
film is oxynitride molybdenum silicide.
18. The method of forming a photomask according to claim 13,
wherein said second region has a region in which said light
shielding film is not formed, and an optional value is selected as
the covering ratio in said second region of said light shielding
film in accordance with the etching conditions of said light
shielding film pattern.
19. The method of forming a photomask according to claim 13,
further comprising, the step performed after the step removing by
etching the dummy pattern in said second region, of removing the
second resist film pattern.
20. The method of forming a photomask according to claim 19,
wherein said light shielding film pattern and said dummy pattern
comprise a chromium film or a translucent phase shift film.
21. The method of forming a photomask according to claim 20,
wherein said translucent phase shift film comprises a light
shielding film made of a chromium compound or a molybdenum silicide
compound.
22. The method of forming a photomask according to claim 21,
wherein said chromium compound of the light shielding film is
chromium fluoride.
23. The method of forming a photomask according to claim 21,
wherein said molybdenum silicide compound of the light shielding
film is oxynitride molybdenum silicide.
24. The method of forming a photomask according to claim 19,
wherein said second region has a region in which said light
shielding film is not formed, and an optional value is selected as
the covering ratio in said second region of said light shielding
film in accordance with the etching conditions of said light
shielding film pattern.
25. A method of manufacturing a semiconductor device, comprising
the steps of: forming a workpiece film on a surface of a
semiconductor substrate; forming a photoresist film on said
workpiece film; transferring a predetermined pattern onto said
photoresist film using a photomask; developing the photoresist film
having said pattern formed thereon and patterning the developed
photoresist film to form a photoresist film pattern; and etching
said workpiece film with the photoresist film pattern used as a
mask to form film patterns of the workpiece film in a first portion
of the surface of the semiconductor substrate and film patterns of
the workpiece film in a second portion of the surface of the
semiconductor substrate, wherein said photomask is a photomask
formed by the method of forming a photomask defined in claim 1.
26. The method of manufacturing a semiconductor device according to
claim 25, wherein the film patterns of the workpiece film in the
first portion of the surface of the semiconductor substrate are
arranged in a low density and the film patterns of the workpiece
film in the second portion of the surface of the semiconductor
substrate are arranged in a high density.
27. The method of manufacturing a semiconductor device according to
claim 25, wherein the film patterns in the first portion and the
second portion comprise conductor wirings or gate electrodes.
28. The method of manufacturing a semiconductor device according to
claim 25, wherein said photomask is a photomask formed by the
method of forming a photomask wherein said light shielding film
pattern and said dummy pattern comprise a chromium film or a
translucent phase shift film.
29. The method of manufacturing a semiconductor device according to
claim 25, wherein said photomask is a photomask formed by the
method of forming a photomask wherein said second region has a
region in which said light shielding film is not formed, and an
optional value can be selected as the covering ratio in said second
region of said light shielding film in accordance with the etching
conditions of said light shielding film pattern.
30. The method of manufacturing a semiconductor device according to
claim 25, wherein said photomask is a photomask formed by the
method of forming a photomask wherein said light shielding film
pattern and said dummy pattern comprise a chromium film or a
translucent phase shift film.
31. The method of manufacturing a semiconductor device according to
claim 25, wherein said photomask is a photomask formed by the
method of forming a photomask wherein said second region has a
region in which said light shielding film is not formed, and an
optional value can be selected as the covering ratio in said second
region of said light shielding film in accordance with the etching
conditions of said light shielding film pattern.
32. A method of manufacturing a semiconductor device, comprising
the steps of: forming a workpiece film on a surface of a
semiconductor substrate; forming a photoresist film on said
workpiece film; transferring a predetermined pattern onto said
photoresist film using a photomask; developing the photoresist film
having said pattern formed thereon and patterning the developed
photoresist film to form a photoresist film pattern; and etching
said workpiece film with the photoresist film pattern used as a
mask to form film patterns of the workpiece film in a first portion
of the surface of the semiconductor substrate and film patterns of
the workpiece film in a second portion of the surface of the
semiconductor substrate, wherein said photomask is a photomask
formed by the method of forming a photomask defined in claim
13.
33. The method of manufacturing a semiconductor device according to
claim 32, wherein the film patterns of the workpiece film in the
first portion of the surface of the semiconductor substrate are
arranged in a low density and the film patterns of the workpiece
film in the second portion of the surface of the semiconductor
substrate are arranged in a high density.
34. The method of manufacturing a semiconductor device according to
claim 32, wherein the film patterns in the first portion and the
second portion comprise conductor wirings or gate electrodes.
35. The method of manufacturing a semiconductor device according to
claim 32, wherein said photomask is a photomask formed by the
method of forming a photomask wherein said light shielding film
pattern and said dummy pattern comprise a chromium film or a
translucent phase shift film.
36. The method of manufacturing a semiconductor device according to
claim 32, wherein said photomask is a photomask formed by the
method of forming a photomask wherein said second region has a
region in which said light shielding film is not formed, and an
optional value can be selected as the covering ratio in said second
region of said light shielding film in accordance with the etching
conditions of said light shielding film pattern.
37. The method of manufacturing a semiconductor device according to
claim 32, wherein said photomask is a photomask formed by the
method of forming a photomask wherein said light shielding film
pattern and said dummy pattern comprise a chromium film or a
translucent phase shift film.
38. The method of manufacturing a semiconductor device according to
claim 32, wherein said photomask is a photomask formed by the
method of forming a photomask wherein said second region has a
region in which said light shielding film is not formed, and an
optional value can be selected as the covering ratio in said second
region of said light shielding film in accordance with the etching
conditions of said light shielding film pattern.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is based upon and claims the benefit of
priority from the prior Japanese Patent Application No. 11-373343,
filed Dec. 28, 1999, the entire contents of which are incorporated
herein by reference.
BACKGROUND OF THE INVENTION
[0002] The present invention relates to a method of forming a
pattern of a photomask used in the manufacture of a semiconductor
device, a liquid crystal substrate and the like, and a method of
forming a semiconductor device using the photomask.
[0003] In the conventional method of forming a pattern, for example
a metal film pattern, on a substrate, a metal film is deposited on
the entire surface of a substrate, followed by coating the entire
surface of the metal film with a photoresist. Then, the photoresist
is selectively exposed to light by using a photomask, followed by
developing the patterned photoresist so as to form a resist film
pattern. Thereafter, the metal film is selectively exposed to light
by using the resist film pattern as a mask, followed by developing
the exposed metal film so as to form a metal film pattern. This is
also the case with the manufacturing method of a semiconductor
device. Specifically, a metal film, i.e. a conductive film, is
deposited on the entire surface of a semiconductor substrate,
followed by coating the entire surface of the conductive film with
a photoresist. Then, the photoresist is selectively exposed to
light by using a mask, followed by developing the patterned
photoresist so as to form a resist film pattern. Thereafter, the
conductive film is subjected to etching by using the resist film
pattern as a mask, so as to form a wiring or a gate electrode.
[0004] FIGS. 10A to 10C are cross sectional views collectively
showing a conventional method of forming a wiring pattern or a gate
electrode on a semiconductor substrate by using a photomask. In the
first step, a light shielding film 101 consisting of chromium (Cr)
is formed on the entire main surface of a transparent substrate 100
such as a glass substrate. Then, the entire surface of the light
shielding film 101 is coated with a positive or negative resist
102, as shown in FIG. 10A. Then, a predetermined pattern is
depicted on the resist layer 102 by irradiating the resist layer
102 with a light or an electron beam in a predetermined pattern,
followed by developing the depicted pattern so as to form a resist
film pattern 102, as shown in FIG. 10B. Further, the light
shielding film 101 is selectively etched with the resist film
pattern 102 used as a mask so as to form a light shielding film
pattern 101. Then, the resist film pattern 102 is removed. As a
result, a photomask consisting of the transparent substrate 100 and
the light shielding film pattern 101 is formed, as shown in FIG.
10C.
[0005] The photomask is constructed in conformity with a circuit
pattern of, for example, a wiring and a gate formed on a
semiconductor substrate. To be more specific, the photomask
comprises a transparent substrate such as a glass substrate, and
light shielding film patterns e.g. chromium film patterns, formed
on the main surface of the transparent substrate. The light
shielding film patterns may be arranged collectively or at a high
density in some region so as to form a collective or dense
arrangement pattern and a single light shielding film pattern is
independently formed in another region so as to form an independent
or isolated arrangement pattern. The arrangement patterns are
determined by the construction of a circuit formed on a
semiconductor substrate. The main surface of the semiconductor
substrate is classified into region A in which the light shielding
film pattern or patterns are formed and region B in which the light
shielding film pattern is not formed. In a region A in which the
light shielding film patterns are collectively provided includes
portions in which the light shielding film patterns are formed,
portion or portions in which the light shielding film pattern is
not formed, i.e., portion or portions located between the adjacent
light shielding film patterns, and portions located between the
outermost light shielding film pattern and region B. In another
region A in which the single light shielding film pattern is
independently provided includes a portion in which the light
shielding film pattern is formed, and portions between the light
shielding film pattern and region B. On the other hand, region B
includes a portion in which nothing is formed on the main surface
of the substrate.
[0006] In forming above mentioned photomask having collectively
arranged light shielding film patterns and an independently
arranged light shielding film pattern present together on the
substrate, a difference in size is generated between the
collectively arranged light shielding film patterns and the
independently arranged light shielding film pattern. As a result,
it is difficult to form a photomask having a uniform size of the
collectively arranged light shielding film patterns and the
independently arranged light shielding film pattern. Thus, if a
resist film pattern is depicted by light or an electron beam in
forming a mask, it is difficult to depict the pattern as designed
because of the influence of the proximity effect. Further, in the
step of developing the resist film, a size difference is generated
depending on, for example, the regions developed. Also, in the step
of etching the light shielding film by using the resist film as a
mask, if a region, in which the etching amount is large in the
etching step of the light shielding film, and another region, in
which the etching amount is small, are present together, a size
difference is also generated. As a result, it is difficult to form
a wiring pattern and a gate pattern as designed on the
semiconductor substrate. How to eliminate these difficulties is a
serious problem to be solved in forming a photomask.
BRIEF SUMMARY OF THE INVENTION
[0007] An object of the present invention, which has been achieved
in an attempt to eliminate the above-noted difficulties, is to
provide a method of forming a photomask including the collectively
arranged light shielding film patterns and an independently
arranged light shielding film pattern, which method diminishes the
difference between the size of the light shielding film patterns in
the collective arrangement pattern and the size of a light
shielding film pattern in the independent arrangement pattern, and
a method of manufacturing a semiconductor device by using the
particular photomask.
[0008] In the present invention, a light shielding film is formed
on the entire surface of a glass substrate and then a resist film
is formed on the light shielding film. In forming a resist film
pattern by irradiating the resist film with a light or an electron
beam, developing the irradiated resist film, and then etching, the
resist film is so patterned that not only a resist film pattern
covering region A of the surface of the glass substrate but also a
resist film pattern covering region B of the surface of the glass
substrate are provided. Then, using the resist film patterns as
masks, the light shielding film is patterned by etching so that a
light shielding film pattern is formed not only in the region A but
also the region B. The light shielding film pattern formed in
region B is used as a dummy pattern. Then, a further resist film is
formed by coating on the transparent substrate to cover the light
shielding film patterns in the region A and the region B. The
further resist film is patterned by irradiating thereonto with a
light or an electron beam, developing the irradiated resist film,
and then etching, so that only a further resist film pattern
covering the region A is provided. Thereafter, an etching treatment
is applied for removing the light shielding film pattern in the
region B using the further resist film pattern as a mask. As the
result, the light shielding film pattern, i.e. dummy pattern, is
removed from the region B so as to prepare a photomask in which the
light shielding film pattern is formed in region A alone. It should
be noted that the presence of the dummy pattern formed in the step
of forming the photomask permits diminishing the difference between
the size of the light shielding film patterns in the collective
arrangement pattern and the size of a light shielding film pattern
in the independent arrangement pattern.
[0009] A method of forming a photomask according to a first aspect
of the present invention, comprises the steps of:
[0010] successively laminating a light shielding film and a first
resist film on a surface of a transparent substrate;
[0011] patterning the first resist film to form a first resist film
pattern;
[0012] etching the light shielding film with the first resist film
pattern used as a mask so as to form a single light shielding film
pattern of the light shielding film in a form of an independent
arrangement pattern and a plurality of light shielding film
patterns of the light shielding film in a form of a collective
arrangement pattern in a first region of the surface of the
transparent substrate and a dummy pattern of the light shielding
film in a second region of the surface of the transparent
substrate;
[0013] removing the first resist film pattern;
[0014] forming a second resist film on the surface of the
transparent substrate to cover the light shielding film patterns in
the first regions and the second regions of the surface of the
transparent substrate;
[0015] patterning the second resist film to form a second resist
film pattern on the first region of the surface of the transparent
substrate; and
[0016] removing by etching the dummy pattern in the second region
with the second resist film pattern used as a mask.
[0017] In the method of forming a photomask according to the first
aspect of the present invention, the light shielding film pattern
and the dummy pattern may comprise a chromium film or a translucent
phase shift film. The translucent phase shift film may comprise a
light shielding film made of a chromium compound or a molybdenum
silicide compound. The chromium compound of the light shielding
film may be chromium fluoride. The molybdenum silicide compound of
the light shielding film may be oxynitride molybdenum silicide.
[0018] In the method of forming a photomask according to the first
aspect of the present invention, the second region may have a
region in which the light shielding film is not formed, and an
optional value may be selected as the covering ratio in the second
region of the light shielding film in accordance with the etching
conditions of the light shielding film pattern.
[0019] In the method of forming a photomask according to the first
aspect of the present invention, the method may further comprise,
the step performed after the step removing by etching the dummy
pattern in the second region, of removing the second resist film
pattern. The light shielding film pattern and the dummy pattern may
comprise a chromium film or a translucent phase shift film. The
translucent phase shift film may comprise a light shielding film
made of a chromium compound or a molybdenum silicide compound. The
chromium compound of the light shielding film may be chromium
fluoride. The molybdenum silicide compound of the light shielding
film may be oxynitride molybdenum silicide.
[0020] In the method of forming a photomask according to the first
aspect of the present invention, the second region may have a
region in which the light shielding film is not formed, and an
optional value may be selected as the covering ratio in the second
region of the light shielding film in accordance with the etching
conditions of the light shielding film pattern.
[0021] A method of forming a photomask according to a second aspect
of the present invention, comprises the steps of:
[0022] forming a light shielding film on a surface of a transparent
substrate;
[0023] forming a first resist film pattern on the light shielding
film;
[0024] etching the light shielding film with the first resist film
pattern used as a mask so as to form a single light shielding film
pattern of the light shielding film in a form of an independent
arrangement pattern and a plurality of light shielding film
patterns of the light shielding film in a form of a collective
arrangement pattern in a first region of the surface of the
transparent substrate and a dummy pattern of the light shielding
film in a second region of the surface of the transparent
substrate;
[0025] removing the first resist film pattern;
[0026] forming a second resist film pattern on the surface of the
transparent substrate to cover the light shielding film patterns in
the first region of the surface of the transparent substrate;
and
[0027] removing by etching the dummy pattern in the second region
with the second resist film pattern used as a mask.
[0028] In the method of forming a photomask according to the second
aspect of the present invention, the light shielding film pattern
and the dummy pattern may comprise a chromium film or a translucent
phase shift film. The translucent phase shift film may comprise a
light shielding film made of a chromium compound or a molybdenum
silicide compound. The chromium compound of the light shielding
film may be chromium fluoride. The molybdenum silicide compound of
the light shielding film may be oxynitride molybdenum silicide.
[0029] In the method of forming a photomask according to the second
aspect of the present invention, the second region may have a
region in which the light shielding film is not formed, and an
optional value may be selected as the covering ratio in the second
region of the light shielding film in accordance with the etching
conditions of the light shielding film pattern.
[0030] In the method of forming a photomask according to the second
aspect of the present invention, the method may further comprise,
the step performed after the step removing by etching the dummy
pattern in the second region, of removing the second resist film
pattern. The light shielding film pattern and the dummy pattern may
comprise a chromium film or a translucent phase shift film. The
translucent phase shift film may comprise a light shielding film
made of a chromium compound or a molybdenum silicide compound. The
chromium compound of the light shielding film may be chromium
fluoride. The molybdenum silicide compound of the light shielding
film may be oxynitride molybdenum silicide.
[0031] In the method of forming a photomask according to the second
aspect of the present invention, the second region may have a
region in which the light shielding film is not formed, and an
optional value may be selected as the covering ratio in the second
region of the light shielding film in accordance with the etching
conditions of the light shielding film pattern.
[0032] A method of manufacturing a semiconductor device according
to a third aspect of the present invention, comprises the steps
of:
[0033] forming a workpiece film on a surface of a semiconductor
substrate;
[0034] forming a photoresist film on the workpiece film;
[0035] transferring a predetermined pattern onto the photoresist
film using a photomask;
[0036] developing the photoresist film having the pattern formed
thereon and patterning the developed photoresist film to form a
photoresist film pattern; and
[0037] etching the workpiece film with the photoresist film pattern
used as a mask to form film patterns of the workpiece film in a
first portion of the surface of the semiconductor substrate and
film patterns of the workpiece film in a second portion of the
surface of the semiconductor substrate,
[0038] wherein the photomask is a photomask formed by a method of
forming a photomask, the method of forming the photomask comprising
the steps of:
[0039] successively laminating a light shielding film and a first
resist film on a surface of a transparent substrate;
[0040] patterning the first resist film to form a first resist film
pattern;
[0041] etching the light shielding film with the first resist film
pattern used as a mask so as to form a single light shielding film
pattern of the light shielding film in a form of an independent
arrangement pattern and a plurality of light shielding film
patterns of the light shielding film in a form of a collective
arrangement pattern in a first region of the surface of the
transparent substrate and a dummy pattern of the light shielding
film in a second region of the surface of the transparent
substrate;
[0042] removing the first resist film pattern;
[0043] forming a second resist film on the surface of the
transparent substrate to cover the light shielding film patterns in
the first regions and the second regions of the surface of the
transparent substrate;
[0044] patterning the second resist film to form a second resist
film pattern on the first region of the surface of the transparent
substrate; and
[0045] removing by etching the dummy pattern in the second region
with the second resist film pattern used as a mask.
[0046] In the method of manufacturing a semiconductor device
according to the third aspect of the present invention, the film
patterns of the workpiece film in the first portion of the surface
of the semiconductor substrate may be arranged in a low density and
the film patterns of the workpiece film in the second portion of
the surface of the semiconductor substrate may be arranged in a
high density.
[0047] In the method of manufacturing a semiconductor device
according to the third aspect of the present invention, the film
patterns in the first portion and the second portion may comprise
conductor wirings or gate electrodes.
[0048] A method of manufacturing a semiconductor device according
to a fourth aspect of the present invention, comprises the steps
of:
[0049] forming a workpiece film on a surface of a semiconductor
substrate;
[0050] forming a photoresist film on the workpiece film;
[0051] transferring a predetermined pattern onto the photoresist
film using a photomask;
[0052] developing the photoresist film having the pattern formed
thereon and patterning the developed photoresist film to form a
photoresist film pattern; and
[0053] etching the workpiece film with the photoresist film pattern
used as a mask to form film patterns of the workpiece film in a
first portion of the surface of the semiconductor substrate and
film patterns of the workpiece film in a second portion of the
surface of the semiconductor substrate,
[0054] wherein the photomask is a photomask formed by a method of
forming a photomask, the method of forming the photomask comprising
the steps of:
[0055] forming a light shielding film on a surface of a transparent
substrate;
[0056] forming a first resist film pattern on the light shielding
film;
[0057] etching the light shielding film with the first resist film
pattern used as a mask so as to form a single light shielding film
pattern of the light shielding film in a form of an independent
arrangement pattern and a plurality of light shielding film
patterns of the light shielding film in a form of a collective
arrangement pattern in a first region of the surface of the
transparent substrate and a dummy pattern of the light shielding
film in a second region of the surface of the transparent
substrate;
[0058] removing the first resist film pattern;
[0059] forming a second resist film pattern on the surface of the
transparent substrate to cover the light shielding film patterns in
the first region of the surface of the transparent substrate;
and
[0060] removing by etching the dummy pattern in the second region
with the second resist film pattern used as a mask.
[0061] In the method of manufacturing a semiconductor device
according to the fourth aspect of the present invention, the film
patterns of the workpiece film in the first portion of the surface
of the semiconductor substrate may be arranged in a low density and
the film patterns of the workpiece film in the second portion of
the surface of the semiconductor substrate may be arranged in a
high density.
[0062] In the method of manufacturing a semiconductor device
according to the fourth aspect of the present invention, the film
patterns in the first portion and the second portion may comprise
conductor wirings or gate electrodes.
[0063] Additional objects and advantages of the invention will be
set forth in the description which follows, and in part will be
obvious from the description, or may be learned by practice of the
invention. The objects and advantages of the invention may be
realized and obtained by means of the instrumentalities and
combinations particularly pointed out hereinafter.
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING
[0064] The accompanying drawings, which are incorporated in and
constitute a part of the specification, illustrate presently
preferred embodiments of the invention, and together with the
general description given above and the detailed description of the
preferred embodiments given below, serve to explain the principles
of the invention.
[0065] FIG. 1A is a plan view showing a photomask in which patterns
of a light shielding film are formed;
[0066] FIG. 1B is a plan view showing a photomask in a step of the
manufacturing method according to the present invention;
[0067] FIGS. 2A to 2D are cross sectional views collectively
showing the manufacturing process of the photomask of the present
invention;
[0068] FIGS. 3A to 3C are cross sectional views collectively
showing the manufacturing process of the photomask of the present
invention;
[0069] FIG. 4A shows the differences from the aimed size caused by
the difference in the light shielding film pattern in respect of
the photomask formed by the method of the present invention and the
photomask formed by the conventional method;
[0070] FIG. 4B is a plan view showing a photomask in which patterns
of a light shielding film are formed;
[0071] FIG. 5A is a plan view showing a photomask in a step of the
manufacturing method according to the present invention;
[0072] FIG. 5B is a cross sectional view along the line VB-VB shown
in FIG. 5A;
[0073] FIG. 6A is a plan view showing the photomask of FIG. 5A in
another step of the manufacturing method according to the present
invention, in which the region of the collective arrangement
pattern of the photomask is covered with a photoresist film
pattern;
[0074] FIG. 6B is a cross sectional view along the line VIB-VIB
shown in FIG. 6A;
[0075] FIG. 7A is a plan view showing the photomask of FIGS. 5A and
6A in a further step of the manufacturing method according to the
present invention;
[0076] FIG. 7B is a cross sectional view along the line VIIB-VIIB
shown in FIG. 7A;
[0077] FIGS. 8A to 8F are plan views each showing a dummy pattern
formed on an photomask in a step of the manufacturing method
according to the present invention;
[0078] FIGS. 9A to 9E are cross sectional views collectively
showing a manufacturing process of a semiconductor device of the
present invention; and
[0079] FIGS. 10A to 10C are cross sectional views collectively
showing the conventional process of forming a photomask.
DETAILED DESCRIPTION OF THE INVENTION
[0080] Some embodiments of the present invention will now be
described with reference to the accompanying drawings.
[0081] Specifically, FIG. 1A is a plan view showing a photomask.
FIG. 1B is a plan view showing a photomask in a step of the
manufacturing method according to the present invention. FIGS. 2A
to 2D are cross sectional views collectively showing the
manufacturing process of the photomask of the present invention.
FIGS. 3A to 3C are cross sectional views collectively showing the
manufacturing process of the photomask of the present invention. In
the present invention, a photomask using a light shielding film
such as a chromium film or a half tone type phase shift mask is
used in general in the step of patterning a metal film formed on,
for example, a silicon wafer. It is also possible to use a Levenson
type phase shift mask. In this embodiment, used is a mask using a
light shielding film such as a chromium film.
[0082] A light exposure device is used in the step of forming a
pattern of a fine structure used for the manufacture of a
semiconductor device or a liquid crystal device. The light exposure
device used includes a so-called "stepper" such as a step and
repeat type light exposure device, and a so-called "scanner" such
as a step and scan type light exposure device. In the step and
repeat type light exposure device, a pattern on a photomask is
reduced to, for example, about 1/5and is projected onto a wafer by
light exposure. A wafer region for one chip to several chips is
subjected to a light exposure at a time. The light exposure is
successively performed while deviating the wafer region. In this
fashion, the manufacturing process is performed while repeating the
step (movement) and the light exposure for a single wafer. In this
method, it is possible to form a pattern of a photomask larger than
the pattern formed on the photoresist on the wafer and, thus, the
photomask can be manufactured relatively easily. Also, the light
exposure accuracy is high and the throughput is high.
[0083] The step and scan light exposure device is equal to the step
and repeat type light exposure device in that the pattern of the
photomask is reduced and projected. However, the step and scan
light exposure device differs from the step and repeat type light
exposure device in that the scanning is performed while
synchronizing the photomask and the wafer during a single light
exposure. Accordingly, in the step and scan light exposure device,
an effective area of the projective lens is increased. Since the
light exposure region is large, it is possible to form a large
chip. It is of high importance nowadays to improve the resolution
of the light exposure device in accordance with miniaturization of
the semiconductor device. The present invention provides a
photomask effective for coping with the particular subject matter.
It is possible for the photomask of the present invention to form
an accurate pattern in, for example, a photomask.
[0084] FIG. 1A is a plan view showing a photomask according to an
embodiment according to the present invention. The photomask
comprises a transparent substrate 10 such as a glass substrate and
light shielding films patterns 11a, 11b and 11c made of chromium
(Cr) and formed on a main surface of the transparent substrate 10.
The light shielding film patterns are arranged collectively or at a
high density in a region so as to form a collective or dense
arrangement pattern and a single light shielding film pattern is
independently formed in another region so as to form an independent
or isolated arrangement pattern. In FIGS. 1A and 1B, three chromium
film patterns 11a are arranged at a high density, i.e., these
chromium film patterns 11a are collectively arranged in a form of
the independent arrangement pattern. A single chromium film 11b is
formed independently. Also, another single chromium film 11c is
formed independently. That is, the three chromium films 11a are
arranged in a form of the collective arrangement pattern, while
each of the single chromium film 11b and the single chromium film
11c is formed in a form of the independent arrangement pattern.
These arrangement patterns are determined by the construction of a
circuit formed on a semiconductor substrate. The light source used
for the light exposure, which is known to the art, includes an
ultraviolet light (i-line) of a mercury lamp, a KrF excimer laser
beam having a wavelength of 248 nm, an ArF excimer laser beam
having a wavelength of 193 nm, and an F2 excimer laser beam having
a wavelength of 157 nm.
[0085] The present invention is featured in that, in order to
diminish the difference between the size of the light shielding
film patterns of the collective arrangement pattern and the size of
the light shielding film pattern of the independent arrangement
pattern in a photomask including these two types of arrangement
patterns, a dummy pattern is formed on a transparent substrate in
the manufacturing process of the photomask, and the dummy pattern
is removed in the subsequent step so as to form a desired light
shielding film pattern formation as shown in FIG. 1A.
[0086] The manufacturing process of the photomask will now be
described with reference to FIGS. 2A to 2D and 3A to 3C. FIG. 2C is
a cross sectional view along the line IIC-IIC shown in FIG. 1B. In
the first step, a chromium film 11 is formed in a thickness of
about 100 nm on a main surface of a transparent substrate 10 such
as a glass substrate by a vacuum deposition method or a sputtering
method. Then, a resist film 13 is formed by coating on the chromium
film 11, as shown in FIG. 2A, followed by irradiating the resist
film 13 with light or an electron beam so as to depict a pattern.
Then, the resist film 13 is developed so as to form a resist film
pattern 13, as shown in FIG. 2B. In the next step, chromium film
patterns 11a, 11b, 11c, and 12 are formed by etching the chromium
film 11 with the resist film pattern 13 used as a mask, as shown in
FIG. 2C. Thereafter, the resist film pattern 13 is removed. As a
result, light shielding film patterns 11a, 11b, 11c, and 12 made of
chromium are formed on the surface of the transparent substrate
such as a glass substrate. The surface of the transparent substrate
includes a first region A and a second region B. Light shielding
film patterns 11a, 11b, 11c are formed in the first region A, and
light shielding film patterns 12 used as dummy patterns are formed
on the entire surface of the second region B, as shown in FIG. 2C.
In the present invention, a chromium-based metal film, a
translucent phase shift film or the like is used as the light
shielding film.
[0087] A chromium film is used in this embodiment. In the next
step, a resist film 14 is formed on the main surface of the
transparent substrate 10 in a manner to cover the light shielding
film patterns, as shown in FIG. 2D, followed by irradiating the
resist film 14 with light or an electron beam so as to depict a
predetermined pattern. The resist film is then developed so as to
pattern the resist film 14. The resist film patterns 14 thus
obtained cover the light shielding film patterns 11a, 11b, 11c in
the first region A, with the light shielding film patterns 12 in
the second region B left exposed to the outside, as shown in FIG.
3A. Then, the chromium film patterns 12 are removed by etching with
the resist film patterns 14 used as masks, as shown in FIG. 3B,
followed by removing the resist film patterns 14 covering the first
region A. In this fashion, a photomask is prepared as shown in FIG.
3C. The width of each of the light shielding film patterns 11a is
about 0.7 .mu.m on the photomask, and the space between the
adjacent shielding film patterns 11a is about 0.7 .mu.m. In the
photomask formed in this embodiment, the light shielding film
patterns can be formed substantially as designed in respect of each
of the collective arrangement pattern i.e. dense arrangement
pattern and the independent arrangement pattern i.e. isolated
arrangement pattern so as to diminish the difference between the
size of the light shielding film patterns 11a of the collective
arrangement pattern and the size of the light shielding film
pattern 11b, 11c of the independent arrangement pattern.
[0088] The characteristics of a photomask formed by the method of
the present invention will now be described with reference to FIGS.
4A and 4B. Specifically, FIG. 4A shows the characteristics in terms
of the error from the aimed size of the light shielding film
patterns in the collective arrangement pattern P1 and the error
from the aimed size of the light shielding film pattern in the
independent arrangement pattern P2, in respect of a photomask
formed by the method of the present invention and a photomask
formed by the conventional method, and FIG. 4B is a plan view
showing the photomask having a light shielding film pattern formed
therein. As shown in FIG. 4B, the photomask comprises a transparent
substrate 20 such as a glass substrate, and a light shielding film
patterns 21 obtained by patterning, for example, a chromium film,
which are formed on the substrate 20. The arrangements of the light
shielding film patterns 21 comprise a pattern P1 that is a dense or
collective arrangement pattern and a pattern P2 that is an
independent arrangement pattern.
[0089] The photomask of the present invention is formed as follows.
In the first step, a light shielding film 21 consisting of a
chromium film is formed on the entire surface of the transparent
substrate 20 by means of a vacuum vapor deposition or a sputtering
method, followed by coating the light shielding film 21 consisting
of the chromium film is coated with a resist film. Then, the resist
film is selectively exposed to light or an electron beam so as to
depict a predetermined pattern on the resist film, followed by
developing the resist film so as to form resist film patterns. In
the next step, light shielding film patterns are formed by etching
the light shielding film 21 consisting of chromium film with the
resist film patterns used as masks. Thereafter, the resist film
patterns 13 are removed. As a result, light shielding film patterns
made of chromium are formed on the surface of the transparent
substrate. The surface of the transparent substrate includes a
first region A and a second region B. Light shielding film patterns
forming mask patterns are formed in the first region A, and light
shielding film patterns used as dummy patterns are formed on the
entire surface of the second region B. In the next step, a resist
film is formed on the main surface of the transparent substrate in
a manner to cover the light shielding film patterns 20, followed by
irradiating the resist film with light or an electron beam so as to
depict a predetermined pattern. The resist film is then developed
so as to pattern the resist film 14. The resist film is then
developed to form resist film patterns. The resist film patterns
cover the light shielding film patterns in the first region A
without covering the light shielding film patterns in the second
region B. Then, the chromium film patterns i.e. dummy patterns in
the second region B are removed by etching with the resist film
patterns 14 covering the first region A used as masks, followed by
removing the resist film patterns. In this fashion, a photomask is
prepared by the method of the present invention.
[0090] In the photomask formed in this embodiment, the light
shielding film patterns are formed substantially as designed in
respect of each of the collective arrangement pattern P1 and the
independent arrangement pattern P2 so as to diminish the error from
the aimed size of the light shielding film patterns of the
collective arrangement pattern P1 and the error from the aimed size
of the light shielding film pattern of the independent arrangement
pattern P2. Thus, the difference in size between the light
shielding film patterns in the collective arrangement pattern P1
and the light shielding film pattern in the independent arrangement
pattern P2 is small. As shown in FIG. 4A, the difference of about
0.095 .mu.m was recognized between the error from the aimed size of
pattern P1 (collective arrangement pattern) and the error from the
aimed size of pattern P2 (independently arrangement pattern) in the
photomask prepared by the conventional method. In the photomask
prepared by the method of the present invention, however, the
difference was only about 0.020 .mu.m so as to markedly improve the
size difference between the sparse and dense patterns.
[0091] A second embodiment of the present invention will now be
described with reference to FIGS. 5A to 7B.
[0092] Specifically, FIG. 5A is a plan view showing a photomask in
a step of the manufacturing method according to the present
invention. FIG. 5B is a cross sectional view along the line VB-VB
shown in FIG. 5A. FIG. 6A is a plan view showing the photomask of
FIG. 5A in another step of the manufacturing method according to
the present invention, in which a first region of the mask is
covered with a photoresist film pattern. FIG. 6B is a cross
sectional view along the line VIB-VIB shown in FIG. 6A. FIG. 7A is
a plan view showing the photomask of FIGS. 5A and 6A in a further
step of the manufacturing method according to the present
invention. FIG. 7B is a cross sectional view along the line
VIIB-VIIB shown in FIG. 7A.
[0093] In this embodiment, a photomask pattern is formed of a
translucent phase shift film. If the distance between the patterns
is diminished in the ordinary photomask using a chromium film, the
light is spread into the dark pattern portion that is originally
not exposed to light and spread light beams overlap each other so
as to intensify the light, with the result that the dark pattern
portion is also exposed to light. In the case of using a phase
shift mask, however, the phase of the light having passed through
the phase shift film is deviated by .pi., with the result that the
light beams spread into the dark pattern portion are allowed to
weaken each other. It follows that the dark pattern portion is not
exposed to light. Therefore, the phase shift mask has a high
resolution and, thus, is adapted for use in the manufacture of a
further miniaturized semiconductor device, compared with the
ordinary photomask. The phase shift mask includes a mask using a
light shielding film made of, for example, a chromium compound such
as chromium fluoride, which is used for forming a phase shift film
and a half tone film on a transparent substrate, or a molybdenum
silicide compound such as oxynitride molybdenum silicide.
[0094] The manufacturing process of the photomask will now be
described with reference to FIGS. 5A to 7B. In the first step, a
light shielding film made of chromium fluoride, which is also used
as a phase shift film and a half tone film, is formed on the entire
surface of a transparent substrate such as a glass substrate by,
for example, a sputtering method, followed by forming a resist film
on the chromium fluoride film by means of coating. Then, the resist
film is selectively exposed to light or an electron beam so as to
depict a predetermined pattern, followed by developing the resist
film to form resist film patterns.
[0095] In the next step, light shielding film patterns are formed
by etching the light shielding film with the resist film patterns
used as masks. Thereafter, the resist film patterns are removed. As
a result, light shielding film patterns are formed on the surface
of the transparent substrate. The surface of the transparent
substrate includes a first region A and a second region B. Light
shielding film patterns 31a, 31b, 31c and 31d used as a mask
pattern are formed in the first region A, and light shielding film
patterns 32 used as a dummy pattern are formed on the entire
surface of the second region B, as shown in FIGS. 5A and 5B. In the
next step, a resist film 34 is formed on the main surface of the
transparent substrate 30 in a manner to cover the shielding film
patterns, followed by selectively irradiating the resist film 34
with light or an electron beam in a predetermined pattern. The
resist film 34 is then developed to form resist film patterns 34.
The resist film patterns 34 cover the light shielding films 31a,
31b, 31c, and 31d in the first region A, with the light shielding
films 32 in the second region B left exposed to the outside, as
shown in FIGS. 6A and 6B. Then, the light shielding film patterns
32 used as a dummy pattern are removed by etching with the
patterned resist films 34 used as a mask, followed by removing the
resist film patterns 34 covering the first region A, thereby
forming a photomask as shown in FIGS. 7A and 7B.
[0096] In the photomask formed in this embodiment, the light
shielding film patterns are formed substantially as designed in
respect of each of the collective arrangement pattern and the
independent arrangement pattern so as to diminish the difference
between the size of the light shielding film patterns 31a in the
collective arrangement pattern and the size of the light shielding
film pattern 31b, 31c, 31d in the independent arrangement
pattern.
[0097] A third embodiment of the present invention will now be
described with reference to FIGS. 8A to 8F.
[0098] This embodiment is featured in that dummy patterns differing
from each other in the covering ratio are used. Specifically, FIGS.
8A to 8F are plan views each showing a dummy pattern 42 formed on a
transparent film in a step of the manufacturing process of the
photomask of the present invention. Each dummy pattern 42 is used
as a pattern like the dummy pattern 12 (see FIG. 1B) formed on the
main surface of the transparent substrate 10, according to the
first embodiment of the present invention. FIG. 8A covers the case
where the dummy pattern 42 is formed of a pattern covered entirely
with a light shielding film such as a chromium film. FIG. 8B covers
case where the entire surface is not covered with a light shielding
film and checker pattern is applied as a dummy pattern 42. Each of
FIGS. 8C and 8D shows a dummy pattern 42 shaped like a contact hole
pattern or a dot pattern. Further, each of FIGS. 8E and 8F shows a
pattern 42 shaped like a line and space pattern.
[0099] In this embodiment, the covering ratio of the dummy pattern,
which is shaped as described above, is changed appropriately. In
the dry etching step for forming a mask pattern of the photomask, a
phenomenon has been confirmed that the etching rate is changed
depending on the covering ratio of the pattern.
[0100] The wiring pattern on a semiconductor substrate is formed as
follows by using a photomask formed by the method of the present
invention.
[0101] FIGS. 9A to 9E are cross sectional views collectively
showing the manufacturing process of a semiconductor substrate
according to the present invention.
[0102] In the first step, a metal film 52 such as an aluminum film
is formed on a semiconductor substrate 50 such as a silicon
substrate having a semiconductor element, not shown, formed thereon
with an interlayer insulating film 51 interposed between the
semiconductor substrate and the metal film, as shown in FIG. 9A.
Then, a photoresist film 53 is formed on the entire surface of the
metal film 52, followed by transferring a predetermined pattern
onto the photoresist film by using a photomask formed by the method
of the present invention, as shown in FIG. 9B. The resist film 53
having the pattern transferred thereonto is developed to form a
resist film pattern 53, as shown in FIG. 9C. Further, the metal
film 52 is etched with the resist film pattern used as a mask,
thereby forming a wiring pattern 52 on the semiconductor substrate,
as shown in FIG. 9D. Then, the resist film pattern 53 is removed,
as shown in FIG. 9E. Thus, the difference between the CAD data
(depiction data) and the finish size, i.e., the conversion
difference, is caused to be different by the difference in the
etching rate noted above. As a result, it is difficult to finish
all the pattern sizes having various pattern covering ratios as
aimed.
[0103] If the covering ratio is the same, the conversion difference
is rendered uniform so as to facilitate the control of the pattern
size. The adjustment of the covering ratio can be performed by
adjusting the covering ratio of the dummy pattern portion as
described in the embodiments of the present invention.
[0104] According to the present invention, it is possible to
markedly diminish the difference in size between the light
shielding film patterns in the collective arrangement pattern and
the light shielding film pattern the independent arrangement
pattern so as to improve the size uniformity of the patterns.
[0105] Additional advantages and modifications will readily occur
to those skilled in the art. Therefore, the invention in its
broader aspects is not limited to the specific details and
representative embodiments shown and described herein. Accordingly,
various modifications may be made without departing from the spirit
or scope of the general inventive concept as defined by the
appended claims and their equivalents.
* * * * *