U.S. patent application number 09/765004 was filed with the patent office on 2001-05-31 for ball grid substrate for lead-on-chip semiconductor package.
Invention is credited to Castro, Abram M..
Application Number | 20010002321 09/765004 |
Document ID | / |
Family ID | 23749536 |
Filed Date | 2001-05-31 |
United States Patent
Application |
20010002321 |
Kind Code |
A1 |
Castro, Abram M. |
May 31, 2001 |
Ball grid substrate for lead-on-chip semiconductor package
Abstract
A package substrate suitable for use with a ball grid array
according to the invention includes an electrically and thermally
conductive heat sink having a top surface and a bottom surface, the
heat sink having a slot formed therethrough which opens onto the
top and bottom surfaces. A dielectric layer is formed on the bottom
surface of the heat sink proximate the slot, preferably directly
thereon without an intervening adhesive layer. A circuit is
selectively formed in a circuit pattern on the dielectric layer. An
electrically resistive soldermask is disposed on the dielectric
layer and the circuit, which soldermask has openings therethrough
which expose bond pads of the circuit. Such a substrate according
to the invention permits the integrated circuit die to be mounted
over the slot in the manner of a lead-on-chip package, but provides
bond pads to which solder balls can be mounted in order to form a
ball grid array.
Inventors: |
Castro, Abram M.; (Fort
Worth, TX) |
Correspondence
Address: |
Philip G. Meyers Intellectual
Property Law, P.C.
Suite 114
3121 Cross Tibers Road
Flower Mound
TX
75028
US
|
Family ID: |
23749536 |
Appl. No.: |
09/765004 |
Filed: |
January 18, 2001 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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09765004 |
Jan 18, 2001 |
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09440630 |
Nov 15, 1999 |
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Current U.S.
Class: |
438/122 ;
257/E23.039; 438/127 |
Current CPC
Class: |
H01L 2224/49109
20130101; H01L 24/48 20130101; H01L 2224/45144 20130101; H01L 24/97
20130101; H01L 2924/3025 20130101; H01L 2924/01029 20130101; H01L
2224/32014 20130101; H01L 2224/97 20130101; H01L 2924/01014
20130101; H01L 24/49 20130101; H01L 2924/01005 20130101; H01L
2924/181 20130101; H01L 2924/01028 20130101; H01L 2224/32225
20130101; H01L 2924/0103 20130101; H01L 2224/4824 20130101; H01L
2224/83856 20130101; H01L 2924/01047 20130101; H01L 2924/01079
20130101; H01L 24/45 20130101; H01L 2224/73215 20130101; H01L
2224/48624 20130101; H01L 2924/01033 20130101; H01L 2924/14
20130101; H01L 2924/01013 20130101; H01L 2924/15311 20130101; H01L
2924/01078 20130101; H01L 2924/01082 20130101; H01L 2924/30105
20130101; H01L 2224/48724 20130101; H01L 23/3128 20130101; H01L
2224/48091 20130101; H01L 2924/01075 20130101; H01L 2224/0401
20130101; H01L 2924/30107 20130101; H01L 2224/48699 20130101; H01L
23/4951 20130101; H01L 2224/05624 20130101; H01L 2224/45124
20130101; H01L 2924/12042 20130101; H01L 2224/45144 20130101; H01L
2924/00014 20130101; H01L 2224/97 20130101; H01L 2224/85 20130101;
H01L 2224/48091 20130101; H01L 2924/00014 20130101; H01L 2224/97
20130101; H01L 2224/83 20130101; H01L 2224/97 20130101; H01L
2224/73215 20130101; H01L 2224/97 20130101; H01L 2924/15311
20130101; H01L 2224/45124 20130101; H01L 2924/00 20130101; H01L
2224/48699 20130101; H01L 2924/00 20130101; H01L 2224/73215
20130101; H01L 2224/32225 20130101; H01L 2224/4824 20130101; H01L
2924/00012 20130101; H01L 2924/15311 20130101; H01L 2224/73215
20130101; H01L 2224/32225 20130101; H01L 2224/4824 20130101; H01L
2924/00012 20130101; H01L 2224/4824 20130101; H01L 2224/49109
20130101; H01L 2924/00012 20130101; H01L 2924/181 20130101; H01L
2924/00012 20130101; H01L 2224/48624 20130101; H01L 2924/00
20130101; H01L 2224/48724 20130101; H01L 2924/00 20130101; H01L
2924/12042 20130101; H01L 2924/00 20130101 |
Class at
Publication: |
438/122 ;
438/127 |
International
Class: |
H01L 021/44; H01L
021/48; H01L 021/50 |
Claims
1. A package substrate suitable for use with a ball grid array,
comprising: an electrically and thermally conductive heat sink
having a top surface and a bottom surface, the heat sink having a
slot formed therethrough which opens onto the top and bottom
surfaces of the heat sink; a dielectric layer formed on the bottom
surface of the heat sink proximate the slot; a circuit disposed on
the dielectric layer, the circuit electrolytically and selectively
formed in a circuit pattern; and an electrically resistive
soldermask disposed on the dielectric layer and the circuit, which
soldermask has openings therethrough which expose bond pads of the
circuit.
2. The package substrate of claim 1, further comprising a via
filled with a heat conducting material, which via extends through
the dielectric layer and is accessible through the soldermask.
3. The package substrate of claim 1, further comprising a layer of
an adhesive secured to the top surface of the heat sink proximate
the slot in a manner effective to adhere an integrated circuit die
thereto.
4. The package substrate of claim 1, wherein a portion of the
bottom surface of the heat sink adjacent the slot is exposed for
connection to a ground wire.
5. The package substrate of claim 1, wherein the bond pads
comprise: a row of spaced wire bond pads formed adjacent a side
edge of the slot and exposed through the openings in the
soldermask, which wire bond pads are suitable for connection by
wires to corresponding wire bond pads of an integrated circuit
disposed over the slot on the top surface of the heat sink; and a
row of spaced terminal pads that is remote from the wire bond pads
and slot edge, the circuit pattern including lines which connect
each wire bond pad to its corresponding terminal pad.
6. The package substrate of claim 5, further comprising a via
filled with a heat conducting material, which via extends through
the dielectric layer and is accessible through the soldermask; and
a layer of an adhesive secured to the top surface of the heat sink
proximate the slot in a manner effective to adhere an integrated
circuit die thereto.
7. The package substrate of claim 6, wherein a portion of the
bottom surface of the heat sink adjacent the slot is exposed for
connection to a ground wire, whereby heat can be conducted from a
die through the ground wire to the heat sink.
8. The package substrate of claim 1, further comprising: a layer of
an adhesive secured to the top surface of the heat sink proximate
the slot; an integrated circuit die attached to the top surface of
the heat sink by the adhesive layer on opposite sides of the slot,
such that wire bond pads on the die are exposed in the slot;
electrically conductive wires bonded to the wire bond pads on the
die and to wire bond pads of the circuit adjacent the slot; an
encapsulant covering the wires and the die; and solder balls bonded
to ball pads of the circuit.
9. The package substrate of claim 8, Her comprising a via filled
with a heat conducting material, which via extends through the
dielectric layer and is accessible through the soldermask.
10. The package substrate of claim 8, wherein a portion of the
bottom surface of the heat sink adjacent the slot is exposed,
further comprising an electrically conductive ground wire bonded to
a ground wire bond pad on the die and to the exposed portion of the
bottom surface of the heat sink adjacent the slot.
11. The package substrate of claim 9, wherein the bond pads
comprise: a row of spaced wire bond pads formed adjacent a side
edge of the slot and exposed through the openings in the
soldermask, which wire bond pads are suitable for connection by
wires to corresponding wire bond pads of an integrated circuit
disposed over the slot on the top surface of the heat sink; and a
row of spaced terminal pads that is remote from the wire bond pads
and slot edge, the circuit pattern including lines which connect
each wire bond pad to its corresponding terminal pad.
12. The package substrate of claim 1, wherein the heat sink
consists essentially of copper.
13. The package substrate of claim 1, further comprising a second
dielectric layer formed on the circuit; a second circuit disposed
on the second dielectric layer, the second circuit electrolytically
and selectively formed in a second circuit pattern; and an
electrically resistive soldermask disposed on the dielectric layers
and the circuits, which soldermask has openings therethrough which
expose bond pads of the circuits.
14. The package substrate of claim 1, wherein only one circuit and
one dielectric layer are included, such that the soldermask is
formed directly over the circuit.
15. A lead frame, comprising a strip of package substrates as
claimed in claim 1 formed side by side and connected on the ends by
rails.
16. The lead frame of claim 15, wherein each package substrate is
separated from each adjacent package substrate by an elongated
widthwise slot having a greater length than the slot in the heat
sink.
17. A method for manufacturing a substrate package, comprising the
steps of: treating a bottom surface of a heat sink with an adhesion
promoter; forming a dielectric layer directly on the treated bottom
surface of the heat sink; forming a circuit pattern on the
dielectric layer; forming an electrically resistive soldermask over
the dielectric layer and circuit; exposing wire bonding pads and
ball pads on the circuit by selectively removing portions of the
soldermask; and forming a widthwise slot through the heat sink at a
location adjacent the wire bonding pads, which slot opens onto top
and bottom surfaces of the heat sink.
18. The method of claim 17, further comprising: cutting an adhesive
sheet into a preform which has an opening therein of the same shape
as the slot; and applying the preform to the top surface of the
heat sink so that the preform opening is in alignment with the
slot.
19. The method of claim 18, further comprising shipping the
substrate package to an end user.
20. The method of claim 17, further comprising exposing an edge of
the bottom surface of the heat sink adjacent the slot.
21. The method of claim 17, further comprising: applying an
adhesive to the top surface of the heat sink around the slot;
mounting an integrated circuit die to the top surface of the heat
sink by means of the adhesive, such that wire bond pads on the die
are exposed in the slot; bonding electrically conductive wires to
the wire bond pads on the die and to the wire bond pads of the
circuit adjacent the slot; covering the wires and the die with an
encapsulant; and bonding solder balls to the ball pads.
22. The method of claim 17, further comprising: forming a via
through the dielectric layer; filling the via with a heat
conducting material; and forming an access opening through the
soldermask over the filled via.
23. The method of claim 17, further comprising: forming a via
through the dielectric layer; filling the via with a heat
conducting material; forming an access opening through the
soldermask over the filled via, applying an adhesive to the top
surface of the heat sink around the slot; mounting an integrated
circuit die to the top surface of the heat sink by means of the
adhesive, such that wire bond pads on the die are exposed in the
slot; bonding electrically conductive wires to the wire bond pads
on the die and to the wire bond pads of the circuit adjacent the
slot; covering the wires and the die with an encapsulant; bonding
solder balls to the ball pads; and bonding solder balls to the
filled heat conductive via.
24. The method of claim 20, further comprising: applying an
adhesive to the top surface of the heat sink around the slot;
mounting an integrated circuit die to the top surface of the heat
sink by means of the adhesive, such that wire bond pads on the die
are exposed in the slot; bonding electrically conductive wires to
the wire bond pads on the die and to the wire bond pads of the
circuit adjacent the slot; bonding an electrically conductive wire
to a ground wire bond pad on the die and to the exposed edge on the
bottom surface of the heat sink adjacent the slot; covering the
wires and the die with an encapsulant; and bonding solder balls to
the ball pads.
25. The method of claim 22, wherein the circuit pattern is formed
from a conductive metal, further comprising filling the via during
the step of forming a circuit pattern on the dielectric layer with
the same metal used to form the circuit pattern.
Description
TECHNICAL FIELD
[0001] The present invention relates to an integrated circuit
substrate and, more particularly, to a ball grid array package that
accommodates a lead-on-chip architecture.
BACKGROUND OF THE INVENTION
[0002] An integrated circuit lead frame generally consists of a die
paddle for mounting the integrated circuit (IC), leads that connect
the integrated circuit to the package exterior, and a support
structure that holds the frame together through the assembly
operation. There are various configurations of lead frames
currently in use in the semiconductor packaging industry including
lead-on-chip (LOC) and lead-under-chip (LUC) configurations. These
LOC packages have a unique mechanical configuration that, when
assembled, best accommodate the needs of memory architecture.
[0003] Memory architecture is heavily influenced by the objective
of providing an evenly distributed I/O channel (bus) across all the
memory cells within the device. Desired characteristics driving
this include lower operating voltages, which make the device more
sensitive to voltage drops (spikes), higher gate densities, faster
access times, and increased clock speeds (shorter paths). Thus, a
large number of memory devices are typically designed with the I/O
interface (aluminum bond pads) in a row bisecting the active side
of the die, This centerline configuration provides minimized power,
ground, and signal paths to every cell within the structure. LOC
designed packages uniquely accommodate the I/O interface with a
centerline bond configuration fanning out to perimeter leads.
[0004] A basic LOC package structure employs an etched or stamped
lead frame that incorporates a centerline slot into a die paddle.
The die paddle is connected to the leads and the frame via a tie
bar that is eventually removed. During package assembly, the die is
mounted against the die paddle with the active side (I/O side) down
against the paddle base, leads on the opposite side. Package
assemblers use a variety of die attachment methods, including tape
and liquid adhesive. As the die is mounted, the I/O connections
(aluminum bond pads) on the die are left exposed on the opposite
side via the centerline slot. The bond pads are then electrically
connected to the leads via conventional Au wire bond techniques.
Once the device is wired, the structure can be overmolded or liquid
encapsulated to protect the silicon and wires. The superstructure
(frame and tie bars) can then be removed, if not removed already,
and the devices are left singulated from the frame. The end
configuration of the device can take numerous shapes based on lead
frame technology used, but varieties include a small outline
package (SOP), small outline integrated circuit (SOIC), plastic
leaded chip carrier (PLCC) or a thin shrink small outline package
(TSSOP). The lead frame technology and assembly techniques
described are widely used within the industry.
[0005] Over the past five years, silicon trends have placed greater
demands on the electrical, thermal, and reliability performance
these LOC devices. One such trend relates to the gate densities now
being achieved in the silicon itself As device geometries decrease,
the gate densities of memory devices have increased dramatically.
Increased gate density translates into higher power concentration
in smaller areas, which means more heat. Most LOC packages manage
this heat by using a metal die pad, but the heat dissipation
performance is reduced by the plastic encapsulant, a poor heat
conductor, and the small surface area of the leads through which
the heat is transmitted. Failure to properly manage the heat
generated by the integrated circuit can result in an accelerated
failure of the device circuitry.
[0006] A second trend stressing conventional LOC packaging is clock
speed. The system's need for faster access times and greater
bandwidth have driven memory clock speeds into the microprocessor
realm of near and over 1 gigahertz. These clock speeds demand
improved (lower) line inductance, power/ground networks, and
shielding that plastic LOC packages cannot deliver due either to
materials sets and/or lead configuration limitations. Finally,
high-speed memory is permeating many high performance systems where
the reliability of plastic (moisture absorbing) LOC packages comes
into question.
[0007] Additionally, recent manufacturing trends have further
compromised the effectiveness of traditional LOC packages. These
trends involve the transition from traditional leaded integrated
circuit packages to ball grid array (BGA) integrated circuit
packages in a majority of high performance silicon applications.
The main drivers of this trend include improved surface
mountability, smaller package footprints, greater package
densities, and growing assembly infrastructures. A need has thus
arisen for a new LOC substrate solution for high speed memory
packaging that has the advantages of a BGA package and has enhanced
thermal and electrical properties. These and other needs are
satisfied by the ball grid array substrate package of the present
invention.
SUMMARY OF THE INVENTION
[0008] A package substrate suitable for use with a ball grid array
according to the invention includes an electrically and thermally
conductive heat sink having a top surface and a bottom surface, the
heat sink having a slot formed therethrough which opens onto the
top and bottom surfaces. A dielectric layer is formed on the bottom
surface of the heat sink proximate the slot, preferably directly
thereon without an intervening adhesive layer. A circuit is
selectively formed in a circuit pattern on the dielectric layer. An
electrically resistive soldermask is disposed on the dielectric
layer and the circuit, which soldermask has openings therethrough
which expose bond pads of the circuit. Such a substrate according
to the invention permits the integrated circuit die to be mounted
over the slot in the manner of a lead-on-chip package, but provides
bond pads to which solder balls can be mounted in order to form a
ball grid array. A layer of an adhesive, such as in a tape form,
may be cut to size and secured to the top surface of the heat sink
proximate the slot, eliminating the need for the user to apply the
adhesive during the process of mounting the die.
[0009] According to preferred embodiments of the invention, the
substrate includes one or more vias filled with electrically and
thermally conductive material, which vias extend through the
dielectric layer and accessible through the soldermask layer, and
are typically located outside of the circuit pattern. Solder balls
may be connected to these filled vias in order to permit grounding
of the heat sink to the motherboard and permit heat from the
integrated circuit die to pass through the heat sink and via to the
motherboard. In addition, a portion of the bottom surface of the
heat sink adjacent the slot may be left exposed, such as by
selective removal of the dielectric coating, for connection to a
ground wire connected to the die. Such a ground wire can pass heat
directly from the die to the heat sink, after which it can pass
through the filled via into the motherboard.
[0010] A new lead frame, or "ball frame" according to the invention
captures the assembly advantages of LOC type packages and addresses
the shortcomings described above. The lead frame is improved by
incorporation of a dielectric and circuit layer on the side
opposite the die. This configuration can provide thermal
management, active power and ground networks, and a ball grid array
pin-out, while accommodating existing and foreseeable die sizes.
Such a lead frame of the invention preferably comprises a strip of
package substrates as described above formed side by side and
connected on the ends by rails. Each package substrate may be
separated from each adjacent package substrate by an elongated
widthwise slot having a greater length than the slot in the heat
sink. The strip is cut both vertically and horizontally at the time
of use to yield separate package substrates.
[0011] The invention further provides a method for manufacturing a
substrate package. According to this method, the bottom surface of
the heat sink is first treated with an adhesion promoter, and the
dielectric layer is then formed directly on the treated bottom
surface. A circuit pattern is then formed on the dielectric layer,
preferably by electrolytic deposition. An electrically resistive
soldermask is then formed over the dielectric layer and circuit,
and portions of the soldermask are then selectively removed to
expose wire bonding pads and ball pads on the circuit. Optionally,
a via may be formed through the dielectric layer and filled with an
electrically and thermally conductive material, and a further
portion of the soldermask is selectively removed to expose and
permit access to the filled via. A slot is formed in the heat sink
at a location adjacent the wire bonding pads, which slot opens onto
top and bottom surfaces of the heat sink. Optionally, the adhesive
layer for attaching the die may be pre-applied by cutting an
adhesive sheet into a preform which has an opening therein of the
same shape as the slot, and applying the preform to the top surface
of the heat sink so that the preform opening is in alignment with
the slot. The substrate may then be shipped to an end user for
completion. If a ground wire is to be run from the die directly to
the heat sink as described above, then the process further includes
a step of exposing an edge of the bottom surface of the heat sink
adjacent the slot. The foregoing steps are preferably performed on
a series of substrates in strip form in order to produce a lead
frame according to the invention.
[0012] The end user completes the integrated circuit package using
a package substrate made by the foregoing process. If not already
present, an adhesive is applied to the top surface of the heat sink
around the slot, and an integrated circuit die is mounted to the
top surface of the heat sink by means of the adhesive, such that
wire bond pads on the die are exposed in the slot. Electrically
conductive wires are bonded to the wire bond pads on the die and to
the wire bond pads of the circuit adjacent the slot. The wires and
die are then covered with an encapsulant, and solder balls are
bonded (soldered) to the ball pads. The integrated circuit packages
by then be singulated by cutting the lead frame as mentioned above.
These and other aspects of the invention are described further in
the detailed description that follows.
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] A more complete understanding of the invention may be had by
reference to the following detailed description when taken in
conjunction with the accompanying drawings, wherein:
[0014] FIG. 1 is a top view of an integrated circuit package
substrate according to the invention;
[0015] FIG. 2 is a cross-sectional view along the line 2-2 in FIG.
1;
[0016] FIG. 3 is a cross-sectional view of a completed integrated
circuit package according to the invention;
[0017] FIG. 4 is a cross-sectional view similar to FIG. 2 of an
alternative embodiment of the invention; and
[0018] FIG. 5 is a top view of a lead frame strip according to the
invention.
DETAILED DESCRIPTION
[0019] Referring to FIGS. 1 and 2, an integrated circuit package
substrate of the invention includes a thermally conductive paddle
or heat sink 100 that serves as a package platform. Heat sink 100
has a bottom face or surface 116 and a top face or surface 117. An
adhesive layer 101 is adhered to top surface 117 adjacent a
widthwise slot 110 which opens onto surfaces 116, 117. A dielectric
layer 102 is formed directly onto bottom surface 116 (i.e., without
any intervening adhesive layer) which has been treated to promote
adhesion of the dielectric 102 as described hereafter. A circuit
pattern 105 is formed on the dielectric 102 and covered by a
soldermask layer 108. Micro-vias 103 filled with copper or a
similar metal extend through dielectric 102 and are accessible
through openings in soldermask 108. Two rows of electrically
conductive wire bond pads 106 are formed adjacent slot 110, either
adjacent thereto as shown, or spaced therefrom by the width of
exposed edge 104 as described hereafter. Circuit pattern 105 spans
pads 106 and a series of terminal (ball) pads 107, which are left
exposed through soldermask 108 so that solder balls can later be
attached thereto.
[0020] A method of making an integrated circuit package substrate
according to the invention includes the initial step of treating
bottom surface 116 of heat sink 100 with an adhesion promoter,
generally one that roughens or oxidizes bottom surface 116 of heat
sink 100, so that a dielectric layer 102 can be formed directly
thereon without the use of an intervening adhesive. The dielectric,
generally in liquid form, is then applied to bottom surface 116 to
form a curable dielectric layer. A circuit 105 is electrolytically
and selectively formed on dielectric 108 in the first of one or
more circuit patterns, and electrically resistive soldermask 108 is
formed on and covers dielectric layer 102 and circuit 105. For
reliability purposes, soldermask 108 preferably has a high epoxy
content. Soldermask 108 has openings formed therein which expose
bond areas 106, 107 of the circuits 105. Such openings may be
formed by the known process of coating the soldermask layer,
imaging through a photomask, and then removing the uncured areas
which correspond to the locations of inner wire bond pads 106 and
outer solder ball pads 107.
[0021] Vias 103 are formed during the sequential build process and
are filled (plated) with a thermally conductive and electrically
material such as copper, so that heat may be conducted directly
from heat sink 100 through the metal in via 103 without an
intervening adhesive layer. During the circuitization process, a
copper layer is deposited on the dielectric layer and into
micro-vias 103, and then etched into the desired circuit pattern
105, and for this reason the heat conductive metal deposited in
vias 103 is preferably the same as the metal used to form circuit
105. To accommodate the subsequent wire bond interconnect, circuit
105 preferably positions wire bond pads 106 at or near centerline
slot 110. Except as otherwise described herein, the process of
circuitization and build-up of dielectric layer 102, circuit 105,
vias 103 and soldermask 108 proceeds as described in
commonly-assigned U.S. Ser. No. 09/075,286, filed May 8, 1998, and
also as PCT Publication WO 98/59368, published Dec. 30, 1998, the
entire contents of which applications are incorporated herein by
reference for all purposes.
[0022] A rectangular layer of copper 130 is formed at the same time
as circuit 105. Layer 130 is positioned to be centered on slot 110,
and is spaced from the edges of each circuit 105. Areas 131 of
layer 130 between circuits 105 serve to isolate the circuits 105
from interfering electrically with each other near slot 100 where
the circuit density is greatest. A pair of centered, rectangular
end portions 133 may be left uncovered by soldermask 108 to serve
as ground connections.
[0023] Widthwise slot 110 is then formed through the coated
substrate in a trimming operation. Slot 110 is formed between left
and right rows of bond areas 106 so that bond areas 106 adjoin
opposite side edges of slot 110. At the same time, if a number of
substrates are being formed as a strip 120 as shown in FIG. 5, then
identical widthwise slots 110 are formed at regular intervals along
strip 120, alternating with widthwise slots 121 greater in length
than slots 110. Slots 121 separate the sides of one substrate from
adjacent ones, but the strip remains united by a pair of end pieces
or rails 122 which run the length of strip 120. Tooling holes 126
are formed to aid in subsequent processing, together with alignment
fiducials 128. At this stage, strip 120 may be shipped to its
destination, but preferably layer 101 of an adhesive is first
applied to top surface 117 of heat sink 100 adjacent slot 110 and
covered with a removable liner.
[0024] Referring to FIG. 3, strip 120 of the invention is then
further processed by the user to make an integrated circuit package
according to the invention. Integrated circuit die 109 is attached
to top surface 117 of heat sink 100 over slot 110 and secured
thereto by the adhesive layer 101 If the adhesive was pre-applied
prior to shipping, then an adhesive release liner, if used, is
removed. Wires 112 are then bonded between exposed bonding pads 111
on die 109 and wire bonding pads 106 formed near slot 110,
generally in two widthwise rows along opposite sides of slot 110.
Centerline slot 110 allows for easy access to aluminum wire bond
pads 111 on the active side of die 109. Conventional wire bonding
techniques allow for electrical connection of die 109 to the
circuitized wire bond pads 106 by wires 112 made of an electrically
conductive metal such as gold.
[0025] Optionally, if the dielectric 108 is removed from bottom
surface 116 along one or preferably both edges of slot 110 as shown
in FIG. 4, then one or more wires 112A may be run from a grounding
pad on die 109 to the exposed edge 104 of heat sink 100 and bonded
thereto, providing additional heat dissipation for the integrated
circuit as well as electrical grounding. Exposed edge 104 is formed
by selective removal of dielectric 108 from bottom surface 116
along the length of one or preferably both of the widthwise edges
of slot 110, and preferably has a width of up to about 0.02
inch.
[0026] Wires 112, 112A are then encapsulated in an electrically
resistive plastic material in a manner known in the art, such as by
liquid encapsulation. However, since encapsulant 113 must be placed
on both sides of heat sink 100 as shown in FIG. 2, it is preferred
to form encapsulant 113 by transfer molding in a manner known in
the art. Exposed copper end portions 124 on rails 122 act as gates
for the molding process. After encapsulation, a standard ball
attach process is used to attach solder balls 114 to the provided
ball pads 107 in order to provide the electrical and thermal path
to the package perimeter. Solder balls 114 are soldered onto
exposed ball pads 107 of the circuit 105 so that a ball grid array
is formed, preferably as two or more parallel, widthwise rows with
at least two such rows on opposite sides of slot 110. Additional
solder balls 114A which are isolated from circuit 105 are bonded to
conductive vias 103 to provide for thermal management. Balls 114A
permit heat from the integrated circuit to be conducted from heat
sink 100, through copper-filled vias 103 to the motherboard on
which the integrated circuit package is mounted.
[0027] Upon assembly completion, the individual units are
singulated from the frame by conventional trim and form techniques.
Strip 120 is subject to a final cutting operation in which rails
122 are removed, and individual packaged integrated circuits are
ready for use. Delivering numerous ball frame packages in-line (as
a strip 120) according to current industry handling preferences
provides a lead frame of the invention ideally suited for automated
assembly. The pattern to which the ball grid circuitry is laid out
can accommodate conventional industry footprints (Jedec) and pitch,
or be customized for application-specific requirements. The
foregoing method can produce a chip-scale package or a near
chip-scale package (wherein the package is no more than 200% of the
length and 200% the width of the die) with advanced thermal
management features.
[0028] A lead frame such as strip 120 of the invention as described
above preferably incorporates a thermally conductive heat sink
providing a die paddle on one side and a built-up circuit on the
opposite side. The die 109 attached to the frame by adhesive 101 is
wire bonded through slot 110 to the circuit side. Circuit paths 105
route the signals electrically to a ball grid array pin out.
[0029] With reference to FIG. 4, additional heat can pass through
ground wire 112A directly to heat sink 100. Some heat is dissipated
directly through the dielectric layer 102 and into ambient air
below the package, but the high thermal efficiency of the plated
copper in via(s) 103 provides the most direct path out of the
package. Incorporating more ball pads into this ground/thermal
network can increase the thermal performance of the package.
Current electrical/thermal software modeling techniques can provide
an optimized netlist or circuit path layout to accommodate
performance requirements.
[0030] Since dielectric 102 is applied to the circuit side without
the use of adhesives, and because dielectric 102 can then be
defined to access heat sink 100 where desirable, i.e., at vias 103,
numerous electrical advantages can be achieved. These include using
heat sink 100 as a ground (reference) plane. Replacement of leads
with solder balls decreases thermal resistance, reduces line
inductance, and decreases package footprint. The addition of more
dielectric layers permits higher layer counts when required, for
example, where there are several circuits built on one another. The
assembly of the new ball frame substrate of the invention is
entirely suited to the assembly of standard LOC type packages. The
ball attach process replaces the lead trim and form operation.
[0031] Optional adhesive layer 101 can be supplied on the frame to
top surface 117 and pre-loaded in a "b-stage" format. This option
preferably makes use of die bonding sheet type materials produced
by companies such as Nippon Steel Chemical. Adhesive 101 may
include a thermal conductivity enhancement agent such as a
particulate silver filler to aid in transmission of heat from die
109. The die bonding sheet can be cut into a preform that matches
the die size and centerline slot configuration of the substrate and
can be tack attached in a simple, low cost operation to form
adhesive layer 101. The incorporation of the adhesive onto the lead
frame or strip 120 simplifies the assembly process for the assembly
house, but can be omitted in favor of traditional die attach
procedures used on a ball frame delivered without the optional
adhesive attached.
[0032] On bottom surface 116, dielectric layer 102 acts as an
electrically isolating layer between heat sink 100 and ball grid
circuit pattern 105. Since dielectric layer 102 is definable by
means of photolithography, laser etching, plasma etching, or other
techniques prior to cure, and as there are no chemical adhesives
used between dielectric layer 102 and heat sink 100, heat sink 100
can be accessed by the formation of micro-vias 103 and edges 104 as
shown in FIG. 4.
[0033] Heat sink 100 is preferably made of a copper alloy such as
Olin Metal & Brass Copper Alloy 194. This material is 98%
copper, which is very low cost, with very high thermal
conductivity. The other 2% consists of metallic fillers (Pb, Zn)
that help increase mechanical properties (tensile strength,
elongation) and consequently make heat sink 100 less susceptible to
handling problems. Heat sink 100 can be thinner than prior BGA
cores, preferably having a thickness from 250-300 microns, because
the dies for use with the substrate of the present invention are
smaller, and the heat sink is not required to have as much
mechanical stiffness. Heat sink 100 could also be made of aluminum
or be a copper-clad laminate of the type presently in commercial
use.
[0034] Because the leads and lead spacing required in traditional
LOC packages can be eliminated in a package according to the
invention, the area of the die pad can be increased while the
package footprint (length and width) is reduced. This advantage is
further realized by improved thermal performance (heat dissipation
as described above) in a smaller area. As package solder balls 114
replace the leads used in known LOC packages, the thermal path into
the motherboard is reduced in length while the thermal mass that
conducts heat, which is related to solder ball volume, is
increased. This translates into a very effective heat sink for the
integrated circuit. The effectiveness of this heat sink can be
further improved by designing the package for a near chip scale or
slightly larger than integrated circuit configuration. In such a
configuration, the die paddle on which the integrated circuit sits
is large enough to both provide a platform for mold encapsulation
and the maximum surface area for thermal transmission, but small
enough to minimize package footprint per Jedec or custom
requirements.
[0035] Electrical advantages of the ball frame package of the
invention stem form the use of a photodielectric optimized for high
speed performance. Such dielectrics are now commercially available
from electronics materials suppliers including Shipley, Nippon
Steel Chemical, and Ciba Giegy. The first advantage of using a
photo-definable dielectric relates to its ability to ground the
heat sink. As mentioned, the dielectric is applied without the use
of adhesives, so there exists no interposing layer between the
dielectric and heat sink. By designing vias into the dielectric in
selected ground "nets", and by plating these vias with an
electrically as well as thermally conductive material like copper,
the heat sink can be easily accessed as a ground, or return path
for the circuitry. The thin nature of the dielectric, ideally
applied to a thickness between 25 and 50 microns, further shortens
this return. This is of benefit to designers using differential
pair circuit design techniques for high speed applications.
[0036] A further electrical advantage of the ball frame package of
the invention relates to the dielectric constant of the materials
used. The photo-definable dielectric preferably contains minimal
amounts of filler components, and ideally has a dielectric constant
of below 3.5. This allows for reduced capacitance in the insulating
material that is critical for high-speed circuitry.
[0037] The ball frame configuration of the invention as a ball grid
array package allows shorter line lengths when compared to lead
frame, and consequently less signal loss and line inductance.
Additional electrical benefits can be obtained from the elimination
of bus line antennae when plating the structure with wire-bondable
nickel/gold. Additional power planes (circuits 105) can be obtained
in the structure through use of the build-up circuitization
techniques in which the process of applying dielectric and circuit
layers to the frame is repeated until the design requirements are
satisfied. Finally, designers can benefit from the fine geometries
achieved thru the build-up circuitization process, which allow
significant improvements in I/O routability for a high speed
integrated circuit die.
[0038] An added benefit of the ball frame configuration of the
invention is the low cost manufacturing process associated with the
technology. Current lead frame technology is based on a
reel-to-reel image/etch process in dedicated lead frame factories.
This technology is widely used and well understood in the industry.
In production, these techniques allow for low cost volume
production frames, but are difficult to re-tool for new designs,
and are capital intensive to set up. Ball frame technology is based
on panel processing very similar to that employed by printed
circuit board shops. Frames are processed in panel or strip format
that are typically run in batches on standard equipment sets. At
the end of the process, the frames are singulated from the panel
through conventional printed wiring board milling or stamping
techniques. This process allows for lower tooling costs and
flexibility in manufacturing equipment. The use of a low cost
dielectric system directly applied to the panel eliminates the need
for costly adhesive and lamination processes associated with
alternate LOC technologies that employ tape or laminate printed
wiring boards in conjunction with a heat sink. Yield enhancements
are achieved with the streamlined process flow associated with the
build up circuitization technique.
[0039] The ball frame system of the invention can be adapted or
delivered to suit applications beyond LOC configurations. These
include integrated circuits designed for power management, such as
hard disk drive controllers, LCD controllers, low level logic and
control, or even identification applications. Regardless of the
lead frame technology being replaced, applying a photo- or
laser-definable dielectric to a heat sink and the delivery of the
heat sink in a lead frame format with a ball grid configuration
allows for numerous design and package circuitry advantages.
[0040] While the present invention has been described with
reference to the illustrated embodiment, it is not intended to
limit the invention but, on the contrary, it is intended to cover
such alternatives, modifications and equivalents as may be included
in the spirit and scope of the invention. For example, instead of
solder balls, the motherboard may be provided with pins or
projections which are bought into contact with the conductive pads
on the integrated circuit package. These and other modifications
involving, for example, reversal of parts, are within the scope of
the claims which follow.
* * * * *