U.S. patent application number 09/737993 was filed with the patent office on 2001-05-10 for molded plastic package with heat sink and enhanced electrical performance.
Invention is credited to Chang, S. C., Combs, Edward G., Fahey, John R., Karnezos, Marcos.
Application Number | 20010000924 09/737993 |
Document ID | / |
Family ID | 22366389 |
Filed Date | 2001-05-10 |
United States Patent
Application |
20010000924 |
Kind Code |
A1 |
Karnezos, Marcos ; et
al. |
May 10, 2001 |
Molded plastic package with heat sink and enhanced electrical
performance
Abstract
A molded plastic package for semiconductor devices incorporating
a heat sink, controlled impedance leads and separate power and
ground rings is described. The lead frame of the package, separated
by a dielectric layer, is attached to a metal heat sink. It has
more than one ring for power and ground connections. The die itself
is attached directly onto the heat sink through a window on the
dielectric and provides high power dissipation. The package is
molded using conventional materials and equipment.
Inventors: |
Karnezos, Marcos; (Menlo
Park, CA) ; Chang, S. C.; (Riverbank, CA) ;
Combs, Edward G.; (Foster City, CA) ; Fahey, John
R.; (Greenville, SC) |
Correspondence
Address: |
Edward C. Kwok
Skjerven Morrill MacPherson LLP
Suite 700
25 Metro Drive
San Jose
CA
95110
US
|
Family ID: |
22366389 |
Appl. No.: |
09/737993 |
Filed: |
December 14, 2000 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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09737993 |
Dec 14, 2000 |
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08116305 |
Sep 3, 1993 |
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Current U.S.
Class: |
257/666 ;
257/E23.043; 257/E23.092 |
Current CPC
Class: |
H01L 2924/01014
20130101; H01L 2924/10253 20130101; H01L 2224/32245 20130101; H01L
2924/14 20130101; H01L 2224/32245 20130101; H01L 2924/00012
20130101; H01L 2924/00 20130101; H01L 2224/32245 20130101; H01L
2924/00 20130101; H01L 2924/00 20130101; H01L 2924/00 20130101;
H01L 2224/45099 20130101; H01L 2224/49109 20130101; H01L 2924/00014
20130101; H01L 2224/05599 20130101; H01L 2224/48247 20130101; H01L
2924/00 20130101; H01L 23/4334 20130101; H01L 2224/48247 20130101;
H01L 2924/30107 20130101; H01L 2924/01029 20130101; H01L 2924/00014
20130101; H01L 2924/10253 20130101; H01L 2924/01004 20130101; H01L
2224/49109 20130101; H01L 2924/01005 20130101; H01L 23/49541
20130101; H01L 2924/01013 20130101; H01L 2924/15747 20130101; H01L
2224/73265 20130101; H01L 2224/49109 20130101; H01L 2924/00014
20130101; H01L 2224/48247 20130101; H01L 2924/01042 20130101; H01L
2224/73265 20130101; H01L 2924/01074 20130101; H01L 2924/181
20130101; H01L 2224/48095 20130101; H01L 2924/19107 20130101; H01L
2224/48253 20130101; H01L 2224/73265 20130101; H01L 2924/01023
20130101; H01L 2924/00014 20130101; H01L 2924/01028 20130101; H01L
24/48 20130101; H01L 2924/181 20130101; H01L 2924/01006 20130101;
H01L 2924/1532 20130101; H01L 24/49 20130101; H01L 2924/3011
20130101; H01L 2224/48095 20130101; H01L 2924/15747 20130101 |
Class at
Publication: |
257/666 |
International
Class: |
H01L 023/495 |
Claims
What is claimed is:
1. A plastic molded package, comprising: a heat sink having an
upper surface and a lower surface; a ceramic ring attached to said
lower surface of said heat sink, said ceramic ring having an
aperture exposing a portion of said lower surface of said heat
sink; a semiconductor die attached to said exposed portion of said
lower surface of said heat sink using a thermally conductive
adhesive; a lead frame having a plurality of leads extending
outside of said plastic molded package, said lead frame being
attached to said ceramic ring; and an encapsulation enclosing said
ceramic ring, said lead frame other than said portion of said leads
outside of said plastic molded package, and said semiconductor
die.
2. A plastic molded package as in claim 1, wherein said ceramic
ring is attached to said heat sink by an adhesive film.
3. A plastic molded package, wherein said heat sink comprises: a
heat sink having a base portion and a raised portion protruding
above said base portion, said base portion having a lower surface
and said raised portion having an upper portion; a dielectric ring
attached to said lower surface of said heat sink, said dielectric
ring having an aperture exposing a portion of said lower surface of
said heat sink; a semiconductor die attached to said exposed
portion of said lower surface of said heat sink using a thermally
conductive adhesive; a lead frame having a plurality of leads
extending outside of said plastic molded package; and an
encapsulation exposing said upper surface of said heat sink to the
ambient and enclosing said base portion of said heat sink, said
dielectric ring, said lead frame other than said portion of said
leads outside of said plastic molded package, and said
semiconductor die.
4. A plastic molded package as in claim 3, wherein said surface of
said raised portion is free of corners.
5. A plastic molded package as in claim 3, wherein said surface of
said raised portion is circular.
6. A plastic molded package as in claim 3, wherein said base
portion further comprises a plurality of conical protrusions
enclosed in said encapsulation.
7. A plastic molded package as in claim 3, wherein said base
portion of said heat sink have a plurality of through holes filled
by said encapsulation.
8. A plastic molded package, comprising: a heat sink having an
upper surface and a lower surface; a dielectric ring attached to
said lower surface of said heat sink, said dielectric ring having
an aperture exposing a portion of said lower surface of said heat
sink; a semiconductor die attached to said exposed portion of said
lower surface of said heat sink using a thermally conductive
adhesive; a lead frame having (i) a plurality of leads extending
outside of said plastic molded package, and (ii) a one-piece
interposer ring downset and attached to said heat sink; and an
encapsulation enclosing said dielectric ring, said lead frame other
than said portion of said leads outside of said plastic molded
package, and said semiconductor die.
9. A plastic package as in claim 8, wherein said one-piece
interposer ring is severed into a plurality of electrically
isolated sections.
10. A plastic package as in claim 9, wherein each of said
electrically isolated section is supported in said encapsulation by
tie bars of said lead frame.
11. A plastic package as in claim 9, wherein one or more of said
electrically isolated sections of said interposer ring is
electrically shorted to said heat sink.
12. A plastic package as in claim 11, wherein said one or
electrically isolated sections are shorted to said heat sink by a
layer of electrically conductive adhesive.
13. A plastic package as in claim 9, wherein said electrically
isolated sections of said interposer ring are electrically shorted
to one or more leads of said lead frame.
14. A plastic package as in claim 1, wherein said dielectric ring
comprises material selected from the group consisting ceramic
materials, epoxy materials including Ablefilm 564AKHM, and a
dielectric sheet material sold under the trade name of Neoflex.
15. A plastic package as in claim 1, wherein said heat sink
comprises a material selected from the group consisting of oxygen
free high conductivity copper, copper/molybdenum/copper laminate,
copper/tungsten/copper laminate and beryllium composites.
16. A plastic package as in claim 1, wherein said exposed portion
of said heat sink is plated with a film of nickel.
Description
BACKGROUND OF THE INVENTION
1. 1. Field of the Invention
2. The present invention relates to the design of a semiconductor
package; and, in particular, the present invention relates to a
semiconductor package designed for high electrical and thermal
dissipation performances.
3. 2. Discussion of the Related Art
4. Semiconductor devices are becoming larger, integrating a larger
number of circuits, and operating at increasingly higher clock
frequencies. As a result, semiconductor devices are requiring,
without compromising reliability, packages of increasingly higher
lead count, and higher electrical and thermal performances.
5. In the prior art, conventional plastic molded packages can
dissipate up to 2 watts of power. With some improvements in the
lead frame, and by adding a heat spreader or heat sink, a plastic
molded package can dissipate up to 4 watts. A further improvement
in power dissipation can be achieved by attaching the semiconductor
device, also called the semiconductor "die", onto an integral heat
sink. Such a heat sink typically has a surface exposed to the
ambient to conduct heat away from the package. An example of such a
package, also called a "thermally enhanced" package, is shown in
FIG. 1.
6. FIG. 1 shows a thermally enhanced package comprising a
semiconductor die 105 attached by a layer of thermally conductive
epoxy to a metallic heat sink 101. The input and output terminals
of semiconductor die 105 are electrically coupled to connection
terminals ("leads") of a lead frame 103 by wire bonds 104, which
connect the bonding pads of semiconductor die 105 to individual
leads in lead frame 103. Lead frame 103 attaches to heat sink 101
by a layer of dielectric adhesive 107. The thermally enhanced
package is encapsulated in a plastic molding 102. In package 100,
high thermal dissipation is achieved by attaching semiconductor die
105 directly onto the lower surface of heat sink 101 using a
thermally conductive epoxy layer 106.
7. Although plastic molded packages are typically of high
reliability, the incorporation of a heat sink in a thermally
enhance plastic molded package, such as package 100 of FIG. 1,
leads to failures which are directly related to the design and the
material used in the heat sink. For example, heat sink 101 is often
made of aluminum. The large difference between the thermal
expansion coefficients (TCE) of the silicon die, at 3 ppm/.degree.
C., and of aluminum, at 25 ppm/.degree. C. induces significant
strain on semiconductor die 105. Such strain causes die-cracking
and thus a package failure. For this reason, in the prior art,
semiconductor die sizes are kept well below 10.times.10 mm to
minimize the induced stress. Alternatively, a heat sink material
with lower TCE can be chosen to minimize the large mismatch in the
heat sink's and the semiconductor die's coefficients of thermal
expansion.
8. A similar mismatch in TCEs exists between heat sink 101 and the
plastic molding 102. Typically, a plastic molding compound has a
TCE of about 17 ppm/.degree. C. The thermal cycle package 100
experiences during assembly and normal operations induces high
stress at the metal-to-molding interface (i.e. between heat sink
101 and plastic molding 102) which can lead to delamination,
cracking of the molding, and die failures. For this reason, a close
matching of the TCEs of heat sink 101 to plastic molding 102 is
very desirable.
9. During the assembly of package 100, plastic molding 102 shrinks
significantly after the molding operation and during post-mold
curing, which is typically carried out at or about 175.degree. C.
The shrinking molding causes significant stress at the
metal-to-molding interface, which can lead to delamination.
Delamination is very undesirable and usually causes long-term
reliability failures. Delamination can be minimized by including on
the heat sink "locking" features, which strengthen mold adhesion,
and by choosing a heat sink material with a TCE closer to that of
the molding compound.
10. In the prior art, frequency performance is limited by the
electrical parasitic impedances of the lead frame to 50 MHz or
less. The lead frame usually consists of a single metal layer
without the ability to provide controlled impedance connections.
U.S. Pat. No. 4,891,687, entitled "Multilayer Molded Plastic IC
Package", to Mallik et al, filed on January 27, and issued on Jan.
2, 1990, discloses a package achieving a high electrical
performance. However, the package disclosed in U.S. Pat. No.
4,891,687 requires two lead frames, and hence, such package is
significantly more costly than a conventional plastic molded
package.
11. Furthermore, the prior art's use of long wire bonds between the
semiconductor die and the lead frame increases the impedances of
ground connections. A high impedance to a ground connection results
in "ground bounce" and other electrical noises which further
restrict the overall electrical performance of the conventional
plastic molded package. In logic semiconductor devices, which
usually require high lead counts, about 25% of the leads in each
package are used for power and ground connections. The large number
of leads devoted to power and ground connections significantly
reduces the number of pins available for signal connections, which
usually determine the level of available performance.
SUMMARY OF THE INVENTION
12. In accordance with the present invention, a plastic molded
package is provided comprising (i) a heat sink having an upper
surface and a lower surface, (ii) a ceramic or dielectric ring
attached by an adhesive film to the lower surface of the heat sink;
(iii) a semiconductor die attached using a thermally conductive
epoxy adhesive to the lower surface of the heat sink through an
aperture in the dielectric ring; (iv) a lead frame, which is
attached to a surface of the dielectric ring, having a number of
leads extending outside of the plastic molded package; and (v) a
plastic molding enclosing the ceramic ring, the lead frame, except
at the exposed portion of the leads and the semiconductor die.
13. In accordance with one aspect of the invention, the heat sink
comprises a base portion enclosed in the encapsulation and a raised
portion protruding above the base portion having a surface exposed
to the ambient. In one embodiment, the exposed surface of the
raised portion is free of corners (e.g. in the shape of a circle).
The base portion of the heat sink includes a number of conical
protrusions enclosed in the molding, and a number of through holes
filled by the molding. The exposed portion of the raised surface of
the heat sink is coated with nickel to provide a good conductive
surface for attaching an external heat sink. Suitable materials for
the heat sink includes oxygen free high conductivity copper,
copper/molybdenum/copper laminate, copper/tungsten/copper laminate
and beryllium composites.
14. In accordance with another aspect of the present invention, the
lead frame of the plastic molded package further comprises an
interposer ring downset and attached to the heat sink. The
interposer ring comprises either a single loop (360.degree.), or a
number of electrically isolated sections for independent
connections to power and ground terminals. Such electrically
isolated sections of the interposer ring can be supported in the
encapsulation by tie bars of the lead frame. For an electrically
isolated section of the interposer ring, an electrical short to the
heat sink allows the heat sink to be used as a ground plane for the
semiconductor die. That electrical short can be accomplished by a
drop of electrically conductive adhesive. The leads of the lead
frame allow the internal power and ground planes in the interposer
ring to be connected to power and ground supplies outside of the
plastic molded package.
15. In accordance with another aspect of the present invention, the
dielectric ring comprises a material selected from the group
consisting ceramic materials, epoxy materials including Ablefilm
564AKHM, and a dielectric sheet material sold under the trade name
of Neoflex. A ceramic dielectric ring provides higher thermal
conductivity than the other materials. Thus, the heat from the
semiconductor die can be conducted through the wire bonds to the
heat sink, rather than through the leads to the ambient, which is a
path of much higher thermal impedance. Consequently, the package of
the present invention provides higher performance in power
dissipation.
16. In a package of present invention, an 8-watt thermal
performance is achieved by adding the combination of the ceramic
dielectric ring and an integral heat sink made out of oxygen-free
high-conductivity copper (OFHC). Since copper's TCE is 17
ppm/.degree. C., which is significantly less than aluminum's TCE,
the package of the present invention can attach a larger die than
the prior art (e.g. up to 14.times.14 mm) without the risk of a
die-cracking failure. Furthermore, in the present invention, the
combined effects of the unique locking features on the integral
heat sink, and the close matching of TCEs between copper and the
molding compound, eliminate delamination and cracking failures
modes observed in aluminum heat sinks of the prior art.
17. Further, by providing controlled impedance traces and separate
power and ground rings on the lead frame, electrical performance in
the packages of the present invention is significantly enhanced
over the prior art. Controlled impedance is achieved by connecting
the heat sink to electrical ground and using the heat sink as an
electrical ground plane. By attaching a ceramic ring of an
appropriate thickness as a dielectric layer between the heat sink
and the lead frame, an impedance in the range of 40-60 ohms is
achieved. Such controlled impedance provides high frequency
performance in the range of 100 MHz.
18. The power and ground rings in a package of the present
invention are provided separately to allow low impedance
connections between the semiconductor die and the leads. Such low
impedance connections are achieved by retaining only a peripheral
part of a conventional die attach pad either as an entire ring or
divided into two or more sections. In one embodiment, the entire
ground ring is electrically shorted to the heat sink.
Alternatively, in a second configuration, the two or more sections
of the retained peripheral part of the die attach pad are each
shorted to either a ground plane (e.g. the heat sink) or one or
more power terminals. Such a configuration has lower inductance
than the prior art leads because the wire bonds to the rings are
shorter, and because the rings have a larger width than the leads.
Furthermore, since most of the power and the ground connections are
internal to the package, the available lead count for signal
transmission is significantly increased. The higher lead count
allows higher performance and achieves a cost which compares
favorably with a conventional package of comparable
performance.
19. The present invention is better understood upon consideration
of the detailed description below and the accompanying
drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
20. FIG. 1 is a cross sectional view of thermally enhanced package
100 of the prior art.
21. FIG. 2 is a cross sectional view of a package 200, in
accordance with the present invention.
22. FIG. 3a is a top view of heat sink 201 of FIG. 2.
23. FIG. 3b is a cross sectional view of heat sink along the dotted
labelled A-A' in FIG. 3a.
24. FIG. 4 is a bottom view of package 200 with plastic 204 molding
removed to show lead frame 205.
25. FIG. 5 is a schematic view of the lower side of the lead frame
with the interposer ring sections.
26. FIG. 6 is a top view of ceramic ring 206.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
27. The present invention relates to a package for encasing a
semiconductor device. Such a package facilitates electrical
connections between a semiconductor device and an external printed
circuit board (PCB). The package of the present invention provides
higher thermal dissipation and higher electrical performance than
conventional plastic molded packages. The package of the present
invention uses materials and design features that significantly
improve the performance of the package without compromising
reliability.
28. FIG. 2 is a cross sectional view of a package 200, in
accordance with the present invention. As shown in FIG. 2, a
semiconductor die 211 is attached by a film of thermally conductive
epoxy 210 to a thick copper heat sink 201. An annular ceramic ring
206 is attached by dielectric adhesive 213 onto heat sink 201 on
one surface of ceramic ring 206 and onto a lead frame 205 on an
opposite surface of ceramic ring 206. Package 200 forms a
transmission line for each lead in lead frame 205, with heat sink
201 acting as a ground plane. In addition, lead frame 205 includes
an interposer ring 208 which surrounds semiconductor die 211 inside
the window 212 of ceramic ring 206. In this embodiment, interposer
ring 208 is severed into four sections 208a-208d to allow
independent connections to the power and ground terminals.
29. In this embodiment, lead frame 205 is a copper lead frame
having leads which are each 6 mils wide and 5 mils thick. Lead
frame 205 can also be constructed from other conductive materials,
e.g. alloy 42. Ceramic ring 206 is 10 mils thick, and the
dielectric layers attaching heat sink 201 and lead frame 205 to the
surfaces of ceramic ring 206 are each about 1 mil thick. Dielectric
ring can be constructed from a ceramic material, an epoxy such as
Ablefilm 564AKHM, or a dielectric sheet material sold under the
trade name of Neoflex. Under this configuration, each lead can be
considered a 40-60 ohm transmission line capable of applications
requiring a clock frequency of up to 100 MHz.
30. Heat sink 201 is made out of oxygen-free high-conductivity
(OFHC) copper. Other suitable materials for heat sink 201 include
copper/molybdenum/copper laminate, copper/tungsten/copper laminate
and beryllium composites. The back surface of semiconductor die 211
is attached to heat sink 201 via thermally conductive epoxy 210.
Although the thermal coefficient of expansion (TCE) of copper is
significantly higher than the TCE of silicon, the flexible nature
of epoxy 211 provides the compliance necessary to prevent die
cracking from differential thermal expansion for semiconductor dies
up to an area about 14.times.14 mm. Furthermore, since copper has
the high thermal conductivity of 0.934 cal-cm/cm.sup.2-sec-.degree.
C., heat sink 201 provides high power dissipation. Further, since
copper's TCE is approximately 17 ppm/.degree. C., the TCE of heat
sink 201 is well matched to the TCEs of most molding compound
materials, which are typically in the range of 16-17 ppm/.degree.
C. The well-matched TCEs at the heat sink-molding interface
minimize stress, thereby causing no delamination even during
thermal cycling or thermal shock tests. The top surface of heat
sink 201, which is exposed to the ambient, is plated with a film
202 of nickel to provide a clean surface (i.e. free of copper
oxides) for attaching an external heat sink, if needed.
31. In the present embodiment, adhesion of heat sink 201 to molding
204 is enhanced by a thin layer of copper oxide at the interface
between heat sink 201 and plastic molding 204. The copper oxide at
the heat sink-molding interface, which is formed by annealing
copper at 300.degree. C. for one hour, has good adhesion to molding
compounds.
32. FIG. 3a is a top view (i.e. viewed above the surface coated by
nickel film 202) of heat sink 201. In the embodiment shown in FIG.
3a, heat sink 201 has a number of mold-locking features to maximize
the adhesion of heat sink 201 to plastic molding 204. First, heat
sink 201 which, as shown, is suitable for use with a 208-lead
package. In this embodiment, heat sink 201 is a 1 inch by 1 inch
square (i.e. measures 1 inch at side 216 of FIG. 3a) with a central
raised portion 220 which provides a 0.8 inch diameter circular
surface. This circular surface is the surface plated with nickel
film 202. A cross sectional view along the dotted line A-A' through
central raised portion 220 is shown in FIG. 3b. Referring to FIG.
3b, central raised portion 220 rises a distance a, which is 0.060
inch in this embodiment, above a base 221 of heat sink 201. Base
221 of heat sink 201 has a thickness b, which is 0.03 inch in this
embodiment. The circular contour of central raised portion 220 is
free of corners to avoid creating stress concentration points.
33. A mold-locking feature is provided by a number of raised
conical protrusions (collectively labelled by reference numeral 203
in FIG. 3a) around the central raised portion 220. In addition, a
through hole is provided in each corner of base 221. These through
holes are collectively labelled by reference numeral 214 in FIG.
3a. Raised conical protrusions 203 and through holes 204 provide
additional surface areas for locking plastic molding 204 onto heat
sink 201. Heat sink 201's mold-locking features have resulted in
excellent adhesion of the plastic molding 204 to heat sink 201,
allowing package 200 to pass all the conventional tests including
the thermal cycling, thermal shock, pressure pot, ink penetration
and high humidity tests.
34. FIG. 4 is a bottom view of package 200 with plastic molding 204
removed so as to clearly show lead frame 205 and interposer ring
208. FIG. 4 shows the interposer ring sections 208a-208d downset
and attached to the heat sink 201 with dielectric adhesive 213.
Interposer ring sections 208a-208d are further supported by tie
bars 241a-241d, which are imbedded in plastic molding 204. Lead
frame 205 is severed to provide electrically isolated leads 250.
Each of interposer ring sections 208a-208d is wire bonded to one of
leads 250. Further, interposer ring sections 241b and 241d, which
are dedicated for connections to a ground terminal, are
electrically shorted to heat sink 201 via electrically conductive
epoxy 240. Alternatively, spot welding or other suitable mechanism
can be used to electrically short interposer ring sections 208b and
208d to heat sink 201. Interposer ring 208 is designed to surround
semiconductor die 211 in close proximity without being in contact
with semiconductor die 211. Consequently, very short wire bonds to
both semiconductor die 211 and leads 250 are possible. Such wire
bonds have low inductance which, in turn, reduces the parasitic
impedances of package 200, thereby enhancing package 200's
electrical performance. Interposer ring 208 provides an additional
advantage in that each interposer ring section can be assigned for
power or ground connection to any of leads 250 within the
interposer ring section's proximity. As mentioned above, power and
ground connections usually take about 25% of the total lead count
in a conventional package. However, because the interposer ring
sections are internal to package 200 and are accessed readily for
connections, the number of leads on lead frame 205 required for
power and ground connections is reduced, thereby effectively
increasing the available lead count of package 200.
35. FIG. 5 shows the lower side of lead frame 205. Unlike
conventional lead frames, lead frame 205 retains only the
peripheral section of the conventional die attach pad to form
interposer ring 208. When interposer ring 208 is divided into at
two or more electrically isolated sections, these sections can be
shorted at the designer's choice either to the heat sink as a
ground connection, or to the power terminals.
36. FIG. 6 shows a top view of ceramic ring 206, showing the
ceramic window 212 in which semiconductor die 211 and interposer
ring sections 208a-208d are placed.
37. The above detailed description is provided to illustrate the
specific embodiments of the present invention and is not intended
to be limiting. Numerous modifications and variations within the
scope of the present invention are possible. The present invention
is defined by the following claims.
* * * * *