U.S. patent application number 09/741439 was filed with the patent office on 2001-04-26 for semiconductor device and method for fabricating the same.
This patent application is currently assigned to Hyundai Electronics Industries Co., Ltd.. Invention is credited to Hwang, Jeong Mo, Son, Jeong Hwan.
Application Number | 20010000411 09/741439 |
Document ID | / |
Family ID | 19535765 |
Filed Date | 2001-04-26 |
United States Patent
Application |
20010000411 |
Kind Code |
A1 |
Hwang, Jeong Mo ; et
al. |
April 26, 2001 |
Semiconductor device and method for fabricating the same
Abstract
A semiconductor device and a method for fabricating the same are
disclosed, in which floating body effect is reduced by applying a
bias to a body in an SOI MOSFET. The semiconductor device includes
first and second impurity ion implanting layers of a conductivity
type formed in a semiconductor substrate having a buried oxide film
and surface silicon layers thereon, first and second transistors of
a conductivity type respectively formed on the first and second
impurity ion implanting layers, having source/drain regions and a
gate, trenches formed between the first and second transistors,
single crystal silicon layers connected to any one of the
source/drain regions of the respective transistors and the first
and second impurity ion implanting layers at sides of the trenches,
and carrier exhausting electrodes connected to the first and second
impurity ion implanting layers at one sides of the respective
transistors, for exhausting carrier generated by ionization impact
in the respective transistors.
Inventors: |
Hwang, Jeong Mo;
(Taejeon-si, KR) ; Son, Jeong Hwan; (Taejeon-si,
KR) |
Correspondence
Address: |
BIRCH STEWART KOLASCH & BIRCH
8110 GATEHOUSE ROAD
SUITE 500 EAST
FALLS CHURCH
VA
22042
US
|
Assignee: |
Hyundai Electronics Industries Co.,
Ltd.
|
Family ID: |
19535765 |
Appl. No.: |
09/741439 |
Filed: |
December 21, 2000 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
09741439 |
Dec 21, 2000 |
|
|
|
09285258 |
Apr 2, 1999 |
|
|
|
Current U.S.
Class: |
257/173 ;
257/297; 257/357; 257/379 |
Current CPC
Class: |
H01L 2924/0002 20130101;
H01L 27/1203 20130101; H01L 27/0218 20130101; H01L 21/84 20130101;
H01L 2924/0002 20130101; H01L 2924/00 20130101 |
Class at
Publication: |
257/173 ;
257/297; 257/357; 257/379 |
International
Class: |
H01L 029/74; H01L
031/111; H01L 027/108; H01L 029/76; H01L 029/94; H01L 031/119; H01L
023/62; H01L 031/062; H01L 031/113 |
Foreign Application Data
Date |
Code |
Application Number |
Apr 2, 1998 |
KR |
11669/1998 |
Claims
What is claimed is:
1. A semiconductor device comprising: first and second impurity ion
implanting layers of a conductivity type formed in a semiconductor
substrate having a buried oxide film and surface silicon layers
thereon; first and second transistors of a conductivity type
respectively formed on the first and second impurity ion implanting
layers, having source/drain regions and a gate; and carrier
exhausting electrodes connected to the first and second impurity
ion implanting layers at one side of each respective transistor,
where the carrier exhausting electrode exhaust carriers generated
by ionization impact in the respective transistors.
2. The semiconductor device claimed in claim 1, further comprising:
trenches formed between the first and second transistors; and
single crystal silicon layers, each being connected to any one of
the source/drain regions of the respective transistors and the
first and second impurity ion implanting layers at sides of the
trenches.
3. The semiconductor device claimed in claim 1, wherein an impurity
ion is implanted into at least one of the source/drain regions of
the respective transistors, and into the single crystal silicon
layers connected to the first and second impurity ion implanting
layers.
4. The semiconductor device claimed in claim 2, wherein the single
crystal silicon layers are formed at sides of the trenches in a
sidewall form.
5. The semiconductor device claimed in claim 2, wherein the
trenches are formed up to a certain depth in the body of the
semiconductor substrate below the buried oxide film.
6. A semiconductor device comprising: impurity ion implanting
layers of p and n types that are formed in a semiconductor
substrate having a buried oxide film and surface silicon layers
thereon and that are used as well regions; NMOS and PMOS
transistors including source/drain regions and a channel region
that is formed in the surface silicon layers on the impurity ion
implanting layers; a gate electrode formed on the channel region;
trenches formed in a portion of the semiconductor substrate
excluding the source/drain regions and the channel region having a
predetermined depth; single crystal silicon layers formed at sides
of the trenches, each single crystal silicon layer being connected
to any one of the source/drain regions; a first dielectric layer
formed in an entire surface in the trenches in which the single
crystal silicon layers are formed; a second dielectric layer formed
within a cavity of the trenches that is defined by the first
dielectric layer; and first and second carrier exhausting
electrodes for exhausting carriers generated by ionization impact,
the electrodes being connected to the single crystal silicon layers
and being connected to each other through the impurity ion
implanting layers of p and n types.
7. A method for fabricating a semiconductor device comprising:
sequentially forming a pad oxide film and a nitride film on a
semiconductor substrate having a buried oxide film and surface
silicon layers thereon; selectively etching the pad oxide film and
the nitride film to form trenches; forming undoped polysilicon
sidewalls at sides of the trenches; thermally oxidizing outer sides
of the undoped polysilicon sidewalls to form a first dielectric
layer; recrystallizing inner sides of the undoped polysilicon
sidewalls using the silicon layers and a body of the semiconductor
substrate as seeds to form single crystal silicon layers;
depositing an oxide film on an entire surface including the
trenches and planarizing the oxide film to form a second dielectric
layer; selectively removing the nitride film and the pad oxide
film; forming a first photoresist over a portion of the
semiconductor device where a PMOS transistor will be formed;
implanting an impurity ion into a channel region of the surface
silicon layers and single crystal silicon layer at a first side of
the trenches and within the body of the semiconductor substrate
using the first photoresist as a mask; forming a gate oxide film
and a gate electrode on the channel region into which the impurity
ion is implanted; selectively implanting the impurity ion into the
gate oxide film and the gate electrode to form source/drain
regions; and forming carrier exhausting electrodes on the surface
silicon layers at a second of the trenches opposing the first
side.
8. The method claimed in claim 7, wherein the buried oxide film has
a thickness of 1000.about.4000 .ANG. and the surface silicon layer
has a thickness of 300.about.2000 .ANG..
9. The method claimed in claim 7, wherein the semiconductor
substrate is formed by at least one of a SIMOX, BESOI and Smart-cut
method.
10. The method claimed in claim 7, wherein the pad oxide film is
formed at a thickness of 100.about.500 .ANG. by thermal oxidation
or CVD process.
11. The method claimed in claim 7, wherein the nitride film is
deposited at a thickness of 500.about.2000 .ANG. by CVD
process.
12. The method claimed in claim 7, wherein the trenches are formed
by etching the semiconductor substrate below the buried oxide film
at a depth of 300.about.1000 .ANG..
13. The method claimed in claim 7, wherein the undoped polysilicon
sidewalls are formed by depositing the undoped polysilicon on the
entire surface of the nitride film including the trenches at a
thickness of 500.about.1500 .ANG. and then etching the deposited
undoped polysilicon from areas other than sides of the
trenches.
14. The method claimed in claim 7, wherein the sidewalls are
recrystallized such that the first dielectric layer has a thickness
of 50.about.200 .ANG. and the single crystal silicon layer has a
thickness of 100.about.300 .ANG..
15. The method claimed in claim 7, wherein the oxide film is
deposited by a CVD or HDP process and planarized by CMP process to
form the second dielectric layer.
16. A method for fabricating a semiconductor device comprising:
forming first and second transistors of a type defined by impurity
ion implanting layers within a semiconductor substrate having a
buried oxide film and surface silicon layers thereon, the first and
second transistors having source/drain regions and a gate; forming
carrier exhausting electrodes, each connected to one of the
impurity ion implanting layers at one side of each of the first and
second transistors, where the carrier exhausting electrodes exhaust
carriers generated by ionization impact in the respective
transistors.
17. The method claimed in claim 16, further comprising: forming
trenches between the first and second transistors; and forming
single crystal silicon layers at sides of the trenches, each single
crystal silicon layer being connected to any one of the
source/drain regions of the respective transistors and the first
and second impurity ion implanting layers.
18. The method claimed in claim 16, further comprising: implanting
an impurity ion into at least one of the source/drain regions of
the respective transistors, and into the single crystal silicon
layers connected to the first and second impurity ion implanting
layers.
19. The method claimed in claim 17, wherein the single crystal
silicon layers are formed at sides of the trenches in a sidewall
form.
20. The method claimed in claim 17, wherein the trenches are formed
up to a certain depth in the body of the semiconductor substrate
below the buried oxide film.
Description
BACKGROUND OF THE INVENTION
1. 1. Field of the Invention
2. The present invention relates to a semiconductor device, and
more particularly, to a semiconductor device and a method for
fabricating the same, a bias is applied to a body in a silicon on
insulator (SOI) MOSFET, effectively reducing or eliminating a
floating body effect otherwise experienced by the semiconductor
device.
3. 2. Discussion of the Related Art
4. A conventional semiconductor device will be described
hereinafter with reference to the accompanying drawings.
5. FIG. 1 is a sectional view illustrating a structure of a
conventional SOI MOSFET.
6. As shown in FIG. 1, in an SOI MOSFET, an SOI substrate is formed
by a SIMOX(Separation by IMplantation of OXygen) method, a
BESOI(Bonded and Etchback SOI) method, or a smart-cut method.
7. The conventional MOSFET includes a buried oxide film 2 formed on
a semiconductor substrate 1 at a thickness of 1000.about.4000
.ANG., an isolation layer 3 formed by LOCOS or STI process, surface
silicon layers formed on the buried oxide film 2 at a thickness of
500.about.2000 .ANG. to form source/drain regions 4 and 6 and a
channel region 5, a gate insulating film 7 formed on the channel
region 5, a gate electrode 8 formed on the gate insulating film 7,
an interleave insulating layer 9 formed on the gate electrode 8 and
transistors of the source/drain regions 4 and 6 to selectively form
a contact hole, and a metal electrode layer 10 connected to the
source/drain regions 4 and 6 and the gate electrode 8 through the
contact hole of the interleave insulating layer 9.
8. A thermal oxide film having a thickness of 50.about.100 .ANG.,
which is grown by thermal oxidation process, is mainly used as the
gate insulating film 7.
9. An impurity ion is implanted into the channel region 5 to adjust
a threshold voltage.
10. If the MOSFET is an NMOS transistor, B or BF.sub.2 is used as
the impurity ion. Alternatively, if the MOSFET is a PMOS
transistor, P or As is used as the impurity ion.
11. A doped polysilicon is mainly used as the gate electrode 8. If
the MOSFET includes both NMOS and PMOS transistors, n.sup.+type
doped polysilicon may be used as the gate electrode 8. An
n.sup.+type doped polysilicon may also be used as the gate
electrode 8 if the MOSFET is an NMOS transistor, but a p.sup.+type
doped polysilicon may be used as the gate electrode 8 if the MOSFET
is a PMOS transistor.
12. After the gate electrode 8 is formed, the impurity ion is
implanted to form the source/drain regions 4 and 6. For NMOS
transistors, As is implanted at a dose of 2.about.5E15 cm.sup.-2.
For PMOS transistors, B or BF.sub.2 is implanted at a dose of
1.about.3E15 cm.sup.-2.
13. At this time, a lightly doped drain (LDD) region may be formed
to prevent the deterioration of device characteristic due to hot
carriers.
14. The SOI device serves as a conventional bulk device. The
channel region of the NMOS and PMOS transistors in these
conventional MOSFET devices remains floating. Therefore, in the
NMOS transistor, a floating body effect may be experienced since
holes may accumulate in a body based on alpha particles or in the
course of operating the device.
15. Due to this floating body effect, the conventional
semiconductor device is susceptible to several problems. For
instance, the breakdown voltage may be reduced by the floating body
effect, and distortion may occur in Id-Vd curve, thereby
deteriorating characteristic of the device. Further, an abnormal
slope of subthreshold may occur and the operation of the device may
become unstable due to transient effect in the course of AC
operation.
SUMMARY OF THE INVENTION
16. The present invention is directed to a semiconductor device and
a method for fabricating the same that substantially obviate one or
more of the above and other problems experienced by conventional
devices due to limitations and disadvantages of the related
art.
17. An object of the present invention is to provide a
semiconductor device and a method for fabricating the same in which
a bias is applied to a body in an SOI MOSFET, thereby reducing or
eliminating a floating body effect.
18. Additional features and advantages of the invention will be set
forth in the description which follows, and in part will be
apparent from the description, or may be learned by practice of the
invention. The objectives and other advantages of the invention
will be realized and attained by the structure particularly pointed
out in the written description and claims hereof as well as the
appended drawings.
19. To achieve these and other advantages and in accordance with
the purpose of the present invention, as embodied and broadly
described, a semiconductor device according to the present
invention includes first and second impurity ion implanting layers
of a conductivity type formed in a semiconductor substrate having a
buried oxide film and surface silicon layers thereon, first and
second transistors of a conductivity type respectively formed on
the first and second impurity ion implanting layers, having
source/drain regions and a gate, trenches formed between the first
and second transistors, single crystal silicon layers connected to
any one of the source/drain regions of the respective transistors
and the first and second impurity ion implanting layers at sides of
the trenches, and carrier exhausting electrodes connected to the
first and second impurity ion implanting layers at one sides of the
respective transistors, for exhausting carrier generated by
ionization impact in the respective transistors.
20. In another aspect, a method for fabricating a semiconductor
device according to the present invention includes the steps of
sequentially forming a pad oxide film and a nitride film on a
semiconductor substrate having a buried oxide film and surface
silicon layers thereon, selectively etching the pad oxide film and
the nitride film to form trenches, forming undoped polysilicon
sidewalls at sides of the trenches, thermally oxidizing outer sides
of the undoped polysilicon sidewalls to form a first dielectric
layer, recrystallizing inner sides of the undoped polysilicon
sidewalls using the silicon layers and a body of the semiconductor
substrate as seeds to form single crystal silicon layers,
depositing an oxide film on an entire surface including the
trenches and planarizing the oxide film to form a second dielectric
layer, selectively removing the nitride film and the pad oxide
film, forming a first photoresist and patterning the first
photoresist to remain on a portion where a PMOS transistor will be
formed, implanting an impurity ion into a channel region of the
surface silicon layers and single crystal silicon layer at one
sides of the trenches, and the body of the semiconductor substrate
using the first photoresist as a mask, forming a gate oxide film
and a gate electrode on the channel region into which the impurity
ion is implanted, selectively implanting the impurity ion into the
gate oxide film and the gate electrode to form source/drain
regions, and forming carrier exhausting electrodes on the surface
silicon layers at the other sides of the trenches.
21. It is to be understood that both the foregoing general
description and the following detailed description are exemplary
and explanatory and are intended to provide further explanation of
the invention as claimed.
BRIEF DESCRIPTION OF THE DRAWINGS
22. The accompanying drawings, which are included to provide a
further understanding of the invention and are incorporated in and
constitute a part of this specification, illustrate embodiments of
the invention and together with the description serve to explain
the principles of the invention.
23. In the drawings:
24. FIG. 1 is a sectional view illustrating a structure of a
conventional MOSFET;
25. FIGS. 2a to 2b are sectional views illustrating exemplary
structures of a MOSFET according to the present invention; and
26. FIGS. 3a to 3n are sectional views illustrating exemplary
process steps involved in forming a MOSFET according to the present
invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
27. Reference will now be made in detail to the preferred
embodiments of the present invention, examples of which are
illustrated in the accompanying drawings.
28. In MOSFET according to the present invention, when etching a
buried oxide film to form an isolation layer, a semiconductor
substrate below the buried oxide film is also etched. A polysilicon
layer is formed as a sidewall and then recrystallized. An impurity
ion is implanted into the polysilicon layer and thus a body of the
semiconductor substrate is contacted with impurity ion implanting
layers.
29. As shown in FIGS. 2a and 2b, the semiconductor device of the
present invention includes a first impurity ion implanting layer 31
of a p type and a first impurity 107 implanting layer 35 of an n
type, a second impurity ion implanting layer 32 of a p type and a
second impurity ion implanting layer 36 of an n type formed in an
SOI semiconductor substrate 21, and a third impurity ion implanting
layer 33 of a p type and a third impurity ion implanting layer 37
of an n type. A buried oxide film 22 and silicon layers 23 are
positioned on layers 32 and 36 and are used as well regions.
Silicon layer 23 is not shown in FIGS. 2a and 2b because
source/drain regions 41 and 43 and a channel region CH are
respectively formed in the silicon layers 23 on the buried oxide
film 22. Sidewall type single crystal silicon layers 28 are
connected to the source/drain regions 41 and 43 at sides of
trenches formed in portions excluding the source/drain regions 41
and 43 and the channel region CH. A first dielectric layer 27 is
formed in the entire surface of the trenches in which the single
crystal silicon layers 28 are formed. A second dielectric layer 29
formed on the first dielectric layer 27 by fully burying the
trenches. A gate oxide film 38 and a gate electrode 39a are formed
on the channel region CH.
30. A metal electrode layer is formed on the source/drain region 41
and 43, and on the gate electrode 39a. The trenches are formed up
to a certain depth of a body of the semiconductor substrate 21.
31. The single crystal silicon layers 28 are doped with the same
impurity ion as the impurity ion for the formation of the
source/drain regions 41 and 43. They remain in contact with the
second impurity ion implanting layer 32 and the second impurity ion
implanting layer 36.
32. To avoid accumulation of carriers in the body, B1 and B2
electrodes (carrier exhausting electrodes) are respectively formed
at the other sides of the trenches formed in portions other than
portions where NMOS and PMOS transistors are formed. These B1 and
B2 electrodes are connected with the source/drain regions 41 and 43
of the respective transistors through the second and third impurity
ion implanting layers 32 and 33 of a p type and the second and
third impurity ion implanting layers 36 and 37 of an n type.
33. The B1 and B2 electrodes serve to exhaust holes or electrons
generated by ionization impact.
34. A method for fabricating the semiconductor device according to
the present invention will be described below with respect to FIGS.
3a-3n.
35. As shown in FIG. 3a, to form an isolation layer, a pad oxide
film 24 and a nitride film 25 are sequentially formed on a stacked
combination of a SOI semiconductor substrate 21, a buried oxide
film 22 and a silicon layer 23. The buried oxide film 22 has a
thickness of 1000.about.4000 .ANG. and the silicon layer 23 has a
thickness of 300.about.2000 .ANG..
36. At this time, the pad oxide film 24 has a thickness of
100.about.500 .ANG. which is achieved by a thermal oxidation or a
chemical vapor deposition (CVD) process, and the nitride film 25
has a thickness of 500.about.2000 .ANG., which is achieved by a CVD
process. The nitride film 25 may be replaced with another
dielectric having etching selectivity against the oxide film and
silicon.
37. Subsequently, as shown in FIG. 3b, the nitride film 25, the pad
oxide film 24 and the SOI semiconductor substrate 21 are
selectively etched to form trenches. Various methods of etching are
well known to those of ordinary skill to perform this etching
process, e.g., selective etching via a mask. At this time, the
substrate below the buried oxide film 22 is etched at a depth of
300.about.1000 .ANG..
38. As shown in FIG. 3c, an undoped polysilicon is deposited on the
entire surface of the nitride film 25 including the trenches at a
thickness of 500.about.1500 .ANG. and then etched using well known
methods to remain only on sides of the trenches so as to form
sidewalls 26. Alternatively, the undoped polysilicon film may be
deposited only in the trenches.
39. As shown in FIG. 3d, the semiconductor substrate 21 having
sidewalls 26 of undoped polysilicon is thermally oxidized. As a
result, outer portions of the sidewalls 26 become a first
dielectric layer 27, and inner portions of the sidewalls 26 are
recrystallized using the silicon layer 23 and the body of the
semiconductor substrate 21 as seeds to become single crystal
silicon layers 28.
40. At this time, the oxidized first dielectric layer 27 has a
thickness of 50.about.200 .ANG. and the single crystal silicon
layers 28 have a thickness of 100.about.300 .ANG..
41. As shown in FIG. 3e, an oxide film is deposited on the entire
surface including the trenches by e.g., a CVD or a high density
plasma (HDP) process, and then planarized by e.g., a chemical
mechanical polishing (CMP) process, to form a second dielectric
layer 29. Then, the nitride film 25 and the pad oxide film 24 are
selectively removed using well known processes. For instance, the
pad oxide film 24 may be removed by a wet etching process.
42. As shown in FIG. 3f, a first photoresist 30 is formed and then
selectively patterned to remain on a portion where a PMOS
transistor will be formed. Using first photoresist 30 as a mask,
impurity ion implantation for connection between adjacent single
crystal silicon layers 28 is performed to form first, second, and
third impurity ion implanting layers 31, 32 and 33 of a p type.
43. For instance, impurity ion implantation for adjustment of a
threshold voltage of the channel region in the NMOS transistor is
then performed at a dose of 0.5E12.about.2E12 atoms/cm.sup.2,
thereby forming first impurity ion implanting layer 31. In
addition, impurity ion implantation for connection between the
single crystal layers 28 is performed at a dose of 1E13.about.5E14
atoms/cm.sup.2 so as to implant impurity ions into the single
crystal silicon layers 28 and the body of the SOI semiconductor
substrate 21, thereby forming second and third impurity ion
implanting layers 32 and 33.
44. As described, the ion implantation energy may be adjusted to
achieve implantation at a suitable junction depth for each impurity
layer. B or BF.sub.2 is used as the impurity ion.
45. Subsequently, as shown in FIG. 3g, a second photoresist 34 is
formed and then patterned to remain on a portion where an NMOS
transistor will be formed.
46. In the same manner as the NMOS transistor, impurity ion
implantation is performed using the second photoresist 34 as a mask
to form first, second and third impurity ion implanting layers 35,
36 and 37 of an n type. P or As is used as the impurity ion.
47. As shown in FIG. 3h, a gate oxide film 38 is formed on the
first impurity ion implanting layer 31 of a p type and the first
impurity ion implanting layer 35 of an n type at a thickness of
40.about.100 .ANG. by thermal oxidation. A material layer 39 for
the formation of a gate electrode is formed on the entire surface
including the gate oxide film 38.
48. Polysilicon into which heavily doped impurity ion of an n type
is implanted may be used as the material layer 39 in both NMOS and
PMOS transistors. For instance, polysilicon into which heavily
doped impurity ion of an n type is implanted may be used as the
material layer 39 in case of the NMOS transistor of dual gate
structure, while polysilicon into which heavily doped impurity ion
of a p type is implanted may be used as the material layer 39 in
case of the PMOS transistor. Alternatively, after an undoped
polysilicon layer is formed on the entire surface including gate
oxide film 38, the appropriate impurity ion is respectively
implanted into the undoped polysilicon layers corresponding to each
of the NMOS and PMOS transistors.
49. A metal layer or a metal silicide layer (not shown) may be
formed on the material layer 31 to reduce the gate resistance.
50. As shown in FIGS. 3i, 3i-1, and 3i-2, the material layer 39
used for the formation of a gate electrode and the gate oxide film
38 are selectively etched. The etched portion of material layer 39
forms a gate electrode 39a.
51. Subsequently, as shown in FIG. 3j, a third photoresist 40 is
deposited on the entire surface of the semiconductor substrate 21
in which the gate electrode 39a is formed. The third photoresist 40
is then selectively patterned to remain on a portion where the NMOS
transistor will be formed. A heavily doped impurity ion
implantation of a p type is performed using the third photoresist
40 as a mask to form the source/drain regions 41 and 43 of the PMOS
transistor.
52. At this time, an impurity ion is implanted down to the single
crystal silicon layer 28 (up to (a) portion) connected to the body
of the semiconductor substrate 21.
53. As shown in FIG. 3k, a fourth photoresist 42 is deposited on
the entire surface of the semiconductor substrate 21 in which the
gate electrode 39a is formed, and selectively patterned to remain
on a portion where the PMOS transistor will be formed. Impurity ion
implantation is performed using the fourth patterned photoresist 42
as a mask to form the source/drain regions 41 and 43 of the NMOS
transistor.
54. As shown in FIGS. 3l-3n, to avoid an accumulation of carriers
in the body of the substrate 21, B1 and B2 electrodes (carrier
exhausting electrodes) are respectively formed at opposite sides of
the respective transistors. More specifically, as shown in FIGS.
3l-3n, a layer insulating film 44 and fifth photoresist 45 are
subsequently deposited on the entire surface of the semiconductor
substrate 21 in which a gate electrode 39a and a source/drain
region 43 are formed. The fifth photoresist 45 is selectively
patterned. The layer insulating film 44 is then etched using the
mask to form a contact hole where a carrier exhausting electrodes
B1 and B2 will be formed. A metal material is then buried into the
contact hole to form the carrier exhausting electrodes B1 and B2.
The fifth photoresist 45 remaining on the layer insulating film is
removed.
55. That is, one electrode B1 or B2 is formed per transistor, the
electrodes being positioned on opposite and distant sides of the
transistors. These B1 and B2 electrodes serve to exhaust holes or
electrons, which are generated by ionization impact, through the
second and third impurity ion implanting layers 32 and 33 of a p
type and the second and third impurity ion implanting layers 36 and
37 of an n type.
56. At this time, an impurity ion is implanted down to the single
crystal silicon layer 28 (up to (b) portion) connected to the body
of the semiconductor substrate 21, the impurity ions being
implanted throughout the entire non-masked portion.
57. After the source/drain regions 41 and 43 are formed, an
annealing process such as furnace annealing or rapid thermal
annealing (RTA) is performed to diffuse the impurity ion.
58. As aforementioned, the semiconductor device of the present
invention has the following advantages.
59. Since the body in the NMOS and PMOS transistors is contacted
with outer electrodes, it is possible to prevent characteristic of
the device from being deteriorated due to floating body effect. In
other words, in the NMOS transistor, the electrons generated around
the drain by ionization impact exhaust towards the drain by means
of the drain field and the holes exhaust towards the B1 electrode
(carrier exhausting electrode) through the second and third
impurity ion implanting layers of p type connected in width
direction of the gate electrode. In the PMOS transistor, since the
electrons exhaust towards the B2 electrode (carrier exhausting
electrode), carriers are not accumulated in the body. This
increases breakdown voltage without causing distortion in the Id-Vd
curve. Further, an abnormal slope of subthreshold does not occur
and unstable operation of the device due to transient effect in the
course of AC operation is prevented, thereby improving operation
characteristic of the device.
60. It will be apparent to those skilled in the art that various
modifications and variations can be made in the semiconductor
device and the method for fabricating the same according to the
present invention without departing from the spirit or scope of the
invention. For instance, the order of ion implantation described in
FIGS. 3f and 3g may be reversed. Thus, it is intended that the
present invention covers the modifications and variations of the
invention provided they come within the scope of the appended
claims and their equivalents.
* * * * *