ZHANG; Qingchun

Patent Applications and Registrations

Patent applications and USPTO patent grants for ZHANG; Qingchun.The latest application filed is for "ablation system and nerve detection device therefor".

Company Profile

19.118.99

ZHANG; Qingchun - Shanghai CN
Zhang; Qingchun - Cary NC
ZHANG; QINGCHUN - Oak Park CA
- Cary NC US
Zhang; Qingchun - Ventura CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Ablation System And Nerve Detection Device Therefor App 20220265339 - YIN; Yuehui ; et al.	2022-08-25
Passivation structure for semiconductor devices Grant RE49,167 - Mieczkowski , et al. August 9, 2	2022-08-09
Modulating Antibody Effector Functions App 20220177580 - KUHNS; SCOTT THOMAS ; et al.	2022-06-09
Methods Of Modulating Antibody-dependent Cell-mediated Cytotoxicity App 20220033511 - POLOZOVA; Alla ; et al.	2022-02-03
Method And Apparatus For Analyzing Electrocardio Signal, And Signal Recorder And Three-dimensional Mapping System App 20210378577 - SUN; Yiyong ; et al.	2021-12-09
Superjunction Power Semiconductor Devices Formed Via Ion Implantation Channeling Techniques And Related Methods App 20210367029 - Van Brunt; Edward Robert ; et al.	2021-11-25
Power switching devices with high dV/dt capability and methods of making such devices Grant 11,184,001 - Zhang , et al. November 23, 2	2021-11-23
Determining Device And Mapping System For Origin Of Arrhythmia App 20210338135 - XIA; Yunlong ; et al.	2021-11-04
Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices Grant 11,164,967 - Zhang , et al. November 2, 2	2021-11-02
Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods Grant 11,075,264 - Van Brunt , et al. July 27, 2	2021-07-27
Power module for supporting high current densities Grant 11,024,731 - Henning , et al. June 1, 2	2021-06-01
Modulating Antibody Dependent Cellular Phagocytosis App 20210155710 - KUHNS; Scott ; et al.	2021-05-27
Ablation Lesion Assessment Method And System App 20210093375 - CHU; Huimin ; et al.	2021-04-01
Semiconductor Structure And Fabrication Method Thereof App 20210066462 - ZHANG; Qingchun	2021-03-04
Transistor structures having a deep recessed P+ junction and methods for making same Grant 10,886,396 - Zhang , et al. January 5, 2	2021-01-05
Transistor structures having a deep recessed P+ junction and methods for making same Grant 10,847,645 - Zhang , et al. November 24, 2	2020-11-24
Transistor structures having reduced electrical field at the gate oxide and methods for making same Grant 10,840,367 - Zhang , et al. November 17, 2	2020-11-17
Power Switching Devices With High Dv/dt Capability And Methods Of Making Such Devices App 20200212908 - Zhang; Qingchun ; et al.	2020-07-02
Power switching devices with DV/DT capability and methods of making such devices Grant 10,601,413 - Zhang , et al.	2020-03-24
Power Schottky diodes having closely-spaced deep blocking junctions in a heavily-doped drift region Grant 10,510,905 - Zhang , et al. Dec	2019-12-17
Power Silicon Carbide Based Mosfet Transistors With Improved Short Circuit Capabilities And Methods Of Making Such Devices App 20190371931 - Zhang; Qingchun ; et al.	2019-12-05
Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices Grant 10,424,660 - Zhang , et al. Sept	2019-09-24
Manufacturing method for dual work-function metal gates Grant 10,403,553 - Zhang Sep	2019-09-03
Power Silicon Carbide Based Mosfet Transistors With Improved Short Circuit Capabilities And Methods Of Making Such Devices App 20190198656 - Zhang; Qingchun ; et al.	2019-06-27
Power Switching Devices With Dv/dt Capability And Methods Of Making Such Devices App 20190081624 - Zhang; Qingchun ; et al.	2019-03-14
Power Module For Supporting High Current Densities App 20190067468 - Henning; Jason Patrick ; et al.	2019-02-28
Transistor Structures Having A Deep Recessed P+ Junction And Methods For Making Same App 20190043980 - Zhang; Qingchun ; et al.	2019-02-07
Power Schottky Diodes Having Closely-spaced Deep Blocking Junctions In A Heavily-doped Drift Region App 20190013416 - Zhang; Qingchun ; et al.	2019-01-10
Power module having a switch module for supporting high current densities Grant 10,153,364 - Henning , et al. Dec	2018-12-11
Transistor structures having a deep recessed P+ junction and methods for making same Grant 10,115,815 - Zhang , et al. October 30, 2	2018-10-30
Manufacturing Method For Dual Work-function Metal Gates App 20180211886 - Zhang; Qingchun	2018-07-26
Passivation structure for semiconductor devices Grant 9,991,399 - Mieczkowski , et al. June 5, 2	2018-06-05
Optically assist-triggered wide bandgap thyristors having positive temperature coefficients Grant 9,941,439 - Zhang April 10, 2	2018-04-10
Power schottky diodes having local current spreading layers and methods of forming such devices Grant 9,929,284 - Zhang , et al. March 27, 2	2018-03-27
Schottky diode Grant 9,865,750 - Henning , et al. January 9, 2	2018-01-09
Super Junction Power Semiconductor Devices Formed Via Ion Implantation Channeling Techniques And Related Methods App 20170345891 - Van Brunt; Edward Robert ; et al.	2017-11-30
Schottky structure employing central implants between junction barrier elements Grant 9,831,355 - Zhang November 28, 2	2017-11-28
Power Module For Supporting High Current Densities App 20170263713 - Henning; Jason Patrick ; et al.	2017-09-14
Power module for supporting high current densities Grant 9,673,283 - Henning , et al. June 6, 2	2017-06-06
Double guard ring edge termination for silicon carbide devices Grant 9,640,609 - Zhang , et al. May 2, 2	2017-05-02
Semiconductor devices including epitaxial layers and related methods Grant 9,640,652 - Hull , et al. May 2, 2	2017-05-02
Bipolar junction transistor with improved avalanche capability Grant 9,601,605 - Zhang , et al. March 21, 2	2017-03-21
Semiconductor devices with heterojunction barrier regions and methods of fabricating same Grant 9,595,618 - Zhang March 14, 2	2017-03-14
Transistor Structures Having Reduced Electrical Field At The Gate Oxide And Methods For Making Same App 20170053987 - Zhang; Qingchun ; et al.	2017-02-23
Diffused junction termination structures for silicon carbide devices Grant 9,570,560 - Zhang , et al. February 14, 2	2017-02-14
Silicon carbide switching devices including P-type channels Grant 9,552,997 - Das , et al. January 24, 2	2017-01-24
High power insulated gate bipolar transistors Grant 9,548,374 - Zhang , et al. January 17, 2	2017-01-17
Transistor structures having reduced electrical field at the gate oxide and methods for making same Grant 9,530,844 - Zhang , et al. December 27, 2	2016-12-27
High-gain wide bandgap darlington transistors and related methods of fabrication Grant 9,478,537 - Zhang , et al. October 25, 2	2016-10-25
Semiconductor devices with non-implanted barrier regions and methods of fabricating same Grant 9,466,674 - Allen , et al. October 11, 2	2016-10-11
IGBT with bidirectional conduction Grant 9,431,525 - Ryu , et al. August 30, 2	2016-08-30
Schottky Structure Employing Central Implants Between Junction Barrier Elements App 20160211387 - Zhang; Qingchun	2016-07-21
Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same Grant 9,385,182 - Henning , et al. July 5, 2	2016-07-05
Optically Assist-Triggered Wide Bandgap Thyristors Having Positive Temperature Coefficients App 20160133777 - Zhang; Qingchun	2016-05-12
SiC devices with high blocking voltage terminated by a negative bevel Grant 9,337,268 - Zhang , et al. May 10, 2	2016-05-10
Recessed termination structures and methods of fabricating electronic devices including recessed termination structures Grant 9,318,623 - Zhang , et al. April 19, 2	2016-04-19
Schottky structure employing central implants between junction barrier elements Grant 9,318,624 - Zhang April 19, 2	2016-04-19
Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials Grant 9,312,343 - Zhang , et al. April 12, 2	2016-04-12
Passivation For Semiconductor Devices App 20160093748 - Mieczkowski; Van ; et al.	2016-03-31
Schottky diode Grant 9,231,122 - Henning , et al. January 5, 2	2016-01-05
Igbt With Bidirectional Conduction App 20150364584 - Ryu; Sei-Hyung ; et al.	2015-12-17
Schottky Diode App 20150333191 - Henning; Jason Patrick ; et al.	2015-11-19
Igbt Structure On Sic For High Performance App 20150311325 - Zhang; Qingchun	2015-10-29
Optically assist-triggered wide bandgap thyristors having positive temperature coefficients Grant 9,171,977 - Zhang October 27, 2	2015-10-27
High Power Insulated Gate Bipolar Transistors App 20150287805 - Zhang; Qingchun ; et al.	2015-10-08
Semiconductor devices with heterojunction barrier regions and methods of fabricating same Grant 9,117,739 - Zhang August 25, 2	2015-08-25
Insulated gate bipolar transistors including current suppressing layers Grant 9,064,840 - Zhang June 23, 2	2015-06-23
Transistor with A-face conductive channel and trench protecting well region Grant 9,064,710 - Zhang , et al. June 23, 2	2015-06-23
Electronic device structure with a semiconductor ledge layer for surface passivation Grant 9,059,197 - Zhang , et al. June 16, 2	2015-06-16
Electronic Device Structure With A Semiconductor Ledge Layer For Surface Passivation App 20150111347 - Zhang; Qingchun ; et al.	2015-04-23
Semiconductor Device With A Current Spreading Layer App 20150084063 - Van Brunt; Edward Robert ; et al.	2015-03-26
Semiconductor Devices With Heterojunction Barrier Regions And Methods Of Fabricating Same App 20150076522 - Zhang; Qingchun	2015-03-19
Super surge diodes Grant 8,952,481 - Zhang , et al. February 10, 2	2015-02-10
Insulated Gate Bipolar Transistors Including Current Suppressing Layers App 20140363931 - ZHANG; QINGCHUN	2014-12-11
Junction Termination Structures Including Guard Ring Extensions And Methods Of Fabricating Electronic Devices Incorporating Same App 20140319646 - Henning; Jason ; et al.	2014-10-30
Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts Grant 8,866,150 - Das , et al. October 21, 2	2014-10-21
Insulated gate bipolar transistors including current suppressing layers Grant 8,835,987 - Zhang September 16, 2	2014-09-16
Electronic device structure with a semiconductor ledge layer for surface passivation Grant 8,809,904 - Zhang , et al. August 19, 2	2014-08-19
Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same Grant 8,803,277 - Henning , et al. August 12, 2	2014-08-12
Transistor Structures Having Reduced Electrical Field At The Gate Oxide And Methods For Making Same App 20140183553 - Zhang; Qingchun ; et al.	2014-07-03
Transistor Structures Having A Deep Recessed P+ Junction And Methods For Making Same App 20140183552 - Zhang; Qingchun ; et al.	2014-07-03
Schottky Diode App 20140145213 - Henning; Jason Patrick ; et al.	2014-05-29
Schottky Structure Employing Central Implants Between Junction Barrier Elements App 20140145289 - Zhang; Qingchun	2014-05-29
Super Surge Diodes App 20140138705 - Zhang; Qingchun ; et al.	2014-05-22
High power insulated gate bipolar transistors Grant 8,710,510 - Zhang , et al. April 29, 2	2014-04-29
Diffused Junction Termination Structures for Silicon Carbide Devices App 20140097450 - Zhang; Qingchun ; et al.	2014-04-10
Schottky diode Grant 8,680,587 - Henning , et al. March 25, 2	2014-03-25
Junction Barrier Schottky Diodes With Current Surge Capability App 20140077228 - Zhang; Qingchun ; et al.	2014-03-20
Schottky diode employing recesses for elements of junction barrier array Grant 8,664,665 - Henning , et al. March 4, 2	2014-03-04
Junction Barrier Schottky diodes with current surge capability Grant 8,653,534 - Zhang , et al. February 18, 2	2014-02-18
Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same Grant 8,637,386 - Zhang , et al. January 28, 2	2014-01-28
High voltage insulated gate bipolar transistors with minority carrier diverter Grant 8,629,509 - Ryu , et al. January 14, 2	2014-01-14
Edge termination structure employing recesses for edge termination elements Grant 8,618,582 - Henning , et al. December 31, 2	2013-12-31
Edge termination structure employing recesses for edge termination elements Grant 08618582 -	2013-12-31
Monolithic high voltage switching devices Grant 8,610,130 - Ryu , et al. December 17, 2	2013-12-17
Power semiconductor devices having selectively doped JFET regions and related methods of forming such devices Grant 8,563,986 - Zhang October 22, 2	2013-10-22
Bipolar Junction Transistor With Improved Avalanche Capability App 20130264581 - Zhang; Qingchun ; et al.	2013-10-10
Electronic device structure including a buffer layer on a base layer Grant 8,552,435 - Zhang , et al. October 8, 2	2013-10-08
High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability Grant 8,541,787 - Zhang September 24, 2	2013-09-24
Stable power devices on low-angle off-cut silicon carbide crystals Grant 8,536,582 - Zhang , et al. September 17, 2	2013-09-17
High Current Density Power Module App 20130207123 - Henning; Jason Patrick ; et al.	2013-08-15
Semiconductor devices with current shifting regions and related methods Grant 8,497,552 - Zhang , et al. July 30, 2	2013-07-30
Mesa termination structures for power semiconductor devices and methods of forming power semiconductor devices with mesa termination structures Grant 8,460,977 - Zhang , et al. June 11, 2	2013-06-11
Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same Grant 8,432,012 - Zhang , et al. April 30, 2	2013-04-30
Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices Grant 8,415,671 - Zhang April 9, 2	2013-04-09
Schottky Diode Employing Recesses For Elements Of Junction Barrier Array App 20130062620 - Henning; Jason Patrick ; et al.	2013-03-14
Edge Termination Structure Employing Recesses For Edge Termination Elements App 20130062619 - Henning; Jason Patrick ; et al.	2013-03-14
Schottky Diode App 20130062723 - Henning; Jason Patrick ; et al.	2013-03-14
Schottky diode structure with silicon mesa and junction barrier Schottky wells Grant 8,384,181 - Zhang , et al. February 26, 2	2013-02-26
Schottky Diodes Including Polysilicon Having Low Barrier Heights App 20130043491 - Sriram; Saptharishi ; et al.	2013-02-21
Semiconductor Devices with Non-Implanted Barrier Regions and Methods of Fabricating Same App 20130032809 - Allen; Scott Thomas ; et al.	2013-02-07
Solid-state pinch off thyristor circuits Grant 8,354,690 - Callanan , et al. January 15, 2	2013-01-15
Semiconductor Devices Including Epitaxial Layers And Related Methods App 20130009221 - Hull; Brett Adam ; et al.	2013-01-10
Optically Assist-triggered Wide Bandgap Thyristors Having Positive Temperature Coefficients App 20120319133 - Zhang; Qingchun	2012-12-20
Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating same Grant 8,330,244 - Zhang , et al. December 11, 2	2012-12-11
Sic Devices With High Blocking Voltage Terminated By A Negative Bevel App 20120292636 - Zhang; Qingchun ; et al.	2012-11-22
Schottky diodes including polysilicon having low barrier heights and methods of fabricating the same Grant 8,304,783 - Sriram , et al. November 6, 2	2012-11-06
Junction Barrier Schottky Diodes With Current Surge Capability App 20120273802 - Zhang; Qingchun ; et al.	2012-11-01
Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits Grant 8,294,507 - Zhang , et al. October 23, 2	2012-10-23
Methods of forming semiconductor devices including epitaxial layers and related structures Grant 8,288,220 - Hull , et al. October 16, 2	2012-10-16
Recessed Termination Structures And Methods Of Fabricating Electronic Devices Including Recessed Termination Structures App 20120256192 - Zhang; Qingchun ; et al.	2012-10-11
Transistor With A-face Conductive Channel And Trench Protecting Well Region App 20120235164 - Zhang; Qingchun ; et al.	2012-09-20
Junction Termination Structures Including Guard Ring Extensions And Methods Of Fabricating Electronic Devices Incorporating Same App 20120205666 - Henning; Jason ; et al.	2012-08-16
Junction barrier Schottky diodes with current surge capability Grant 8,232,558 - Zhang , et al. July 31, 2	2012-07-31
Transistor with A-face conductive channel and trench protecting well region Grant 8,211,770 - Zhang , et al. July 3, 2	2012-07-03
Power switching devices having controllable surge current capabilities Grant 8,193,848 - Zhang , et al. June 5, 2	2012-06-05
Mesa Termination Structures For Power Semiconductor Devices And Methods Of Forming Power Semiconductor Devices With Mesa Termination Structures App 20120122305 - Zhang; Qingchun ; et al.	2012-05-17
Electronic Device Structure With A Semiconductor Ledge Layer For Surface Passivation App 20120018738 - Zhang; Qingchun ; et al.	2012-01-26
Electronic Device Structure Including A Buffer Layer On A Base Layer App 20120018737 - Zhang; Qingchun ; et al.	2012-01-26
Mesa termination structures for power semiconductor devices including mesa step buffers Grant 8,097,919 - Zhang , et al. January 17, 2	2012-01-17
Wide Band-Gap MOSFETs Having a Heterojunction Under Gate Trenches Thereof and Related Methods of Forming Such Devices App 20110254010 - Zhang; Qingchun	2011-10-20
Transistor With A-face Conductive Channel And Trench Protecting Well Region App 20110250737 - Zhang; Qingchun ; et al.	2011-10-13
Semiconductor Devices Including Schottky Diodes Having Overlapping Doped Regions And Methods Of Fabricating Same App 20110248285 - Zhang; Qingchun ; et al.	2011-10-13
Semiconductor Devices With Heterojunction Barrier Regions And Methods Of Fabricating Same App 20110215338 - Zhang; Qingchun	2011-09-08
Transistor with A-face conductive channel and trench protecting well region Grant 7,989,882 - Zhang , et al. August 2, 2	2011-08-02
Silicon Carbide Switching Devices Including P-Type Channels App 20110121318 - Das; Mrinal Kanti ; et al.	2011-05-26
Monolithic High Voltage Switching Devices And Related Methods Of Fabricating The Same App 20110101374 - Ryu; Sei-Hyung ; et al.	2011-05-05
Power Semiconductor Devices Having Selectively Doped JFET Regions and Related Methods of Forming Such Devices App 20110101375 - Zhang; Qingchun	2011-05-05
Transistors with Semiconductor Interconnection Layers and Semiconductor Channel Layers of Different Semiconductor Materials App 20110084284 - Zhang; Qingchun ; et al.	2011-04-14
Solid-State Pinch Off Thyristor Circuits App 20110049561 - Callanan; Robert J. ; et al.	2011-03-03
Methods of forming silicon carbide switching devices including P-type channels Grant 7,883,949 - Das , et al. February 8, 2	2011-02-08
High-Gain Wide Bandgap Darlington Transistors and Related Methods of Fabrication App 20110012129 - Zhang; Qingchun ; et al.	2011-01-20
High Breakdown Voltage Wide Band-Gap MOS-Gated Bipolar Junction Transistors with Avalanche Capability App 20110012130 - Zhang; Qingchun	2011-01-20
Schottky Diodes Including Polysilicon Having Low Barrier Heights and Methods of Fabricating the Same App 20100308337 - Sriram; Saptharishi ; et al.	2010-12-09
Power Switching Devices Having Controllable Surge Current Capabilities App 20100301929 - Zhang; Qingchun ; et al.	2010-12-02
High Voltage Insulated Gate Bipolar Transistors with Minority Carrier Diverter App 20100301335 - Ryu; Sei-Hyung ; et al.	2010-12-02
Power semiconductor devices with mesa structures and buffer layers including mesa steps Grant 7,838,377 - Zhang , et al. November 23, 2	2010-11-23
Diffused Junction Termination Structures For Silicon Carbide Devices And Methods Of Fabricating Silicon Carbide Devices Incorporating Same App 20100289032 - Zhang; Qingchun ; et al.	2010-11-18
Wide Bandgap Bipolar Turn-off Thyristor Having Non-negative Temperature Coefficient And Related Control Circuits App 20100283529 - Zhang; Qingchun ; et al.	2010-11-11
Methods of Forming Semiconductor Devices Including Epitaxial Layers and Related Structures App 20100244047 - Hull; Brett Adam ; et al.	2010-09-30
Semiconductor transistor with P type re-grown channel layer Grant 7,795,691 - Zhang , et al. September 14, 2	2010-09-14
Insulated gate bipolar transistors including current suppressing layers App 20100140628 - Zhang; Qingchun	2010-06-10
Stable Power Devices On Low-angle Off-cut Silicon Carbide Crystals App 20100133550 - Zhang; Qingchun ; et al.	2010-06-03
Semiconductor Devices with Current Shifting Regions and Related Methods App 20100133549 - Zhang; Qingchun ; et al.	2010-06-03
Semiconductor devices including schottky diodes with controlled breakdown Grant 7,728,402 - Zhang , et al. June 1, 2	2010-06-01
Semiconductor device with a conduction enhancement layer Grant 7,719,080 - Zhang May 18, 2	2010-05-18
Insulated gate bipolar conduction transistors (IBCTS) and related methods of fabrication Grant 7,687,825 - Zhang March 30, 2	2010-03-30
Mesa Termination Structures For Power Semiconductor Devices And Methods Of Forming Power Semiconductor Devices With Mesa Termination Structures App 20100032685 - Zhang; Qingchun ; et al.	2010-02-11
Semiconductor Devices Including Schottky Diodes Having Doped Regions Arranged As Islands And Methods Of Fabricating Same App 20090315036 - Zhang; Qingchun ; et al.	2009-12-24
Junction Barrier Schottky Diodes With Current Surge Capability App 20090289262 - Zhang; Qingchun ; et al.	2009-11-26
Gate structure with low resistance for high power semiconductor devices Grant 7,589,377 - Gomez , et al. September 15, 2	2009-09-15
Double Guard Ring Edge Termination for Silicon Carbide Devices and Methods of Fabricating Silicon Carbide Devices Incorporating Same App 20090212301 - Zhang; Qingchun ; et al.	2009-08-27
Semiconductor Transistor With P Type Re-grown Channel Layer App 20090189228 - ZHANG; QINGCHUN ; et al.	2009-07-30
Transistor with A-Face Conductive Channel and Trench Protecting Well Region App 20090146154 - Zhang; Qingchun ; et al.	2009-06-11
Power Semiconductor Devices With Mesa Structures And Buffer Layers Including Mesa Steps App 20090121319 - Zhang; Qingchun ; et al.	2009-05-14
Insulated Gate Bipolar Conduction Transistors (IBCTS) and Related Methods of Fabrication App 20090072242 - Zhang; Qingchun	2009-03-19
U-shape metal-oxide-semiconductor (UMOS) gate structure for high power MOS-based semiconductor devices Grant 7,476,932 - Zhang , et al. January 13, 2	2009-01-13
Methods Of Fabricating Silicon Carbide Power Devices By At Least Partially Removing An N-type Silicon Carbide Substrate, And Silicon Carbide Power Devices So Fabricated App 20080296771 - Das; Mrinal Kanti ; et al.	2008-12-04
Schottky Diode Structure with Silicon Mesa and Junction Barrier Schottky Wells App 20080191304 - Zhang; Qingchun ; et al.	2008-08-14
High Power Insulated Gate Bipolar Transistors App 20080105949 - Zhang; Qingchun ; et al.	2008-05-08
Novel Gate Structure with Low Resistance for High Power Semiconductor Devices App 20080085591 - Gomez; Mercedes P. ; et al.	2008-04-10
Novel U-Shape Metal-Oxide-Semiconductor (UMOS) Gate Structure For High Power MOS-Based Semiconductor Devices App 20080079065 - Zhang; Qingchun ; et al.	2008-04-03
Semiconductor devices including Schottky diodes with controlled breakdown and methods of fabricating same App 20080029838 - Zhang; Qingchun ; et al.	2008-02-07
Silicon Carbide Switching Devices Including P-type Channels And Methods Of Forming The Same App 20080001158 - Das; Mrinal Kanti ; et al.	2008-01-03
Silicon carbide-based device contact and contact fabrication method Grant 7,247,550 - Zhang July 24, 2	2007-07-24
Semiconductor device with a conduction enhancement layer App 20070013021 - Zhang; Qingchun	2007-01-18
Silicon carbide-based device contact and contact fabrication method App 20060178016 - Zhang; Qingchun	2006-08-10