| Patent | Date |
|---|
Trench Bottom Shielding Methods And Approaches For Trenched Semiconductor Device Structures
App 20220293787 - Kim; Woongsun ; et al. | 2022-09-15 |
Semiconductor Devices Having Gate Resistors With Low Variation In Resistance Values
App 20220278212 - Ryu; Sei-Hyung ; et al. | 2022-09-01 |
Trench bottom shielding methods and approaches for trenched semiconductor device structures
Grant 11,355,630 - Kim , et al. June 7, 2 | 2022-06-07 |
Finfet Power Semiconductor Devices
App 20220173227 - Islam; Naeem ; et al. | 2022-06-02 |
Power Transistor With Soft Recovery Body Diode
App 20220173237 - Han; Kijeong ; et al. | 2022-06-02 |
Power Transistor With Soft Recovery Body Diode
App 20220173238 - Han; Kijeong ; et al. | 2022-06-02 |
Semiconductor Power Devices Having Multiple Gate Trenches And Methods Of Forming Such Devices
App 20220157959 - Kim; Woongsun ; et al. | 2022-05-19 |
Gate Trench Power Semiconductor Devices Having Improved Deep Shield Connection Patterns
App 20220149196 - Kim; Woongsun ; et al. | 2022-05-12 |
Semiconductor Devices Including An Offset Metal To Polysilicon Gate Contact
App 20220149165 - Lichtenwalner; Daniel Jenner ; et al. | 2022-05-12 |
Passivation Structures For Semiconductor Devices
App 20220140132 - Van Brunt; Edward Robert ; et al. | 2022-05-05 |
Protection Structures For Semiconductor Devices With Sensor Arrangements
App 20220140138 - Van Brunt; Edward Robert ; et al. | 2022-05-05 |
Power Semiconductor Devices Including A Trenched Gate And Methods Of Forming Such Devices
App 20220130995 - Lichtenwalner; Daniel ; et al. | 2022-04-28 |
Gate Trench Power Semiconductor Devices Having Improved Deep Shield Connection Patterns
App 20220130996 - Islam; Naeem ; et al. | 2022-04-28 |
Gate Trench Power Semiconductor Devices Having Improved Deep Shield Connection Patterns
App 20220130997 - Harrington, III; Thomas E. ; et al. | 2022-04-28 |
Power Semiconductor Devices Including Angled Gate Trenches
App 20220130998 - Kim; Woongsun ; et al. | 2022-04-28 |
Semiconductor device with improved short circuit withstand time and methods for manufacturing the same
Grant 11,309,413 - Ryu April 19, 2 | 2022-04-19 |
Trench Bottom Shielding Methods And Approaches For Trenched Semiconductor Device Structures
App 20220085205 - Kim; Woongsun ; et al. | 2022-03-17 |
Power Silicon Carbide Based Semiconductor Devices With Improved Short Circuit Capabilities And Methods Of Making Such Devices
App 20220069138 - Han; Kijeong ; et al. | 2022-03-03 |
Sidewall Dopant Shielding Methods And Approaches For Trenched Semiconductor Device Structures
App 20220052152 - Lichtenwalner; Daniel J. ; et al. | 2022-02-17 |
Power switching devices with high dV/dt capability and methods of making such devices
Grant 11,184,001 - Zhang , et al. November 23, 2 | 2021-11-23 |
Semiconductor Die With Improved Edge Termination
App 20210273090 - Steinmann; Philipp ; et al. | 2021-09-02 |
Wide bandgap semiconductor device
Grant 11,075,295 - Ryu July 27, 2 | 2021-07-27 |
Hybrid power module
Grant 11,057,033 - Van Brunt , et al. July 6, 2 | 2021-07-06 |
Wide Bandgap Semiconductor Device With Sensor Element
App 20210202341 - Kim; Joohyung ; et al. | 2021-07-01 |
Power module for supporting high current densities
Grant 11,024,731 - Henning , et al. June 1, 2 | 2021-06-01 |
Semiconductor Device With Improved Short Circuit Withstand Time And Methods For Manufacturing The Same
App 20210111279 - Ryu; Sei-Hyung | 2021-04-15 |
Hybrid Power Module
App 20200412359 - Van Brunt; Edward Robert ; et al. | 2020-12-31 |
Vertical Semiconductor Device With Improved Ruggedness
App 20200365721 - Lichtenwalner; Daniel Jenner ; et al. | 2020-11-19 |
Power Switching Devices With High Dv/dt Capability And Methods Of Making Such Devices
App 20200212908 - Zhang; Qingchun ; et al. | 2020-07-02 |
Power switching devices with DV/DT capability and methods of making such devices
Grant 10,601,413 - Zhang , et al. | 2020-03-24 |
Wide Bandgap Semiconductor Device
App 20200020793 - Ryu; Sei-Hyung | 2020-01-16 |
Vertical FET structure
Grant 10,269,955 - Ryu , et al. | 2019-04-23 |
Power Switching Devices With Dv/dt Capability And Methods Of Making Such Devices
App 20190081624 - Zhang; Qingchun ; et al. | 2019-03-14 |
Power Module For Supporting High Current Densities
App 20190067468 - Henning; Jason Patrick ; et al. | 2019-02-28 |
Power module having a switch module for supporting high current densities
Grant 10,153,364 - Henning , et al. Dec | 2018-12-11 |
Vertical Fet Structure
App 20180204945 - Ryu; Sei-Hyung ; et al. | 2018-07-19 |
Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions
Grant 9,984,894 - Dhar , et al. May 29, 2 | 2018-05-29 |
Schottky diode
Grant 9,865,750 - Henning , et al. January 9, 2 | 2018-01-09 |
Power Module For Supporting High Current Densities
App 20170263713 - Henning; Jason Patrick ; et al. | 2017-09-14 |
PECVD protective layers for semiconductor devices
Grant 9,761,439 - Ring , et al. September 12, 2 | 2017-09-12 |
Bipolar junction transistor structure for reduced current crowding
Grant 9,755,018 - Cheng , et al. September 5, 2 | 2017-09-05 |
Power module for supporting high current densities
Grant 9,673,283 - Henning , et al. June 6, 2 | 2017-06-06 |
Silicon carbide switching devices including P-type channels
Grant 9,552,997 - Das , et al. January 24, 2 | 2017-01-24 |
High power insulated gate bipolar transistors
Grant 9,548,374 - Zhang , et al. January 17, 2 | 2017-01-17 |
Edge termination structures for silicon carbide devices
Grant 9,515,135 - Ryu , et al. December 6, 2 | 2016-12-06 |
Semiconductor device having high performance channel
Grant 9,478,616 - Dhar , et al. October 25, 2 | 2016-10-25 |
IGBT with bidirectional conduction
Grant 9,431,525 - Ryu , et al. August 30, 2 | 2016-08-30 |
Wet chemistry processes for fabricating a semiconductor device with increased channel mobility
Grant 9,396,946 - Dhar , et al. July 19, 2 | 2016-07-19 |
Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same
Grant 9,385,182 - Henning , et al. July 5, 2 | 2016-07-05 |
Pecvd Protective Layers For Semiconductor Devices
App 20160172315 - Ring; Zoltan ; et al. | 2016-06-16 |
Methods of processing semiconductor wafers having silicon carbide power devices thereon
Grant 9,349,596 - Agarwal , et al. May 24, 2 | 2016-05-24 |
Transistors with a gate insulation layer having a channel depleting interfacial charge
Grant 9,343,540 - Dhar , et al. May 17, 2 | 2016-05-17 |
SiC devices with high blocking voltage terminated by a negative bevel
Grant 9,337,268 - Zhang , et al. May 10, 2 | 2016-05-10 |
Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials
Grant 9,312,343 - Zhang , et al. April 12, 2 | 2016-04-12 |
Bidirectional silicon carbide transient voltage supression devices
Grant 9,312,256 - Haney , et al. April 12, 2 | 2016-04-12 |
Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof
Grant 9,269,580 - Dhar , et al. February 23, 2 | 2016-02-23 |
Schottky diode
Grant 9,231,122 - Henning , et al. January 5, 2 | 2016-01-05 |
Igbt With Bidirectional Conduction
App 20150364584 - Ryu; Sei-Hyung ; et al. | 2015-12-17 |
Schottky Diode
App 20150333191 - Henning; Jason Patrick ; et al. | 2015-11-19 |
Transistors With A Gate Insulation Layer Having A Channel Depleting Interfacial Charge
App 20150325655 - DHAR; Sarit ; et al. | 2015-11-12 |
Vertical power transistor with built-in gate buffer
Grant 9,184,237 - Ryu , et al. November 10, 2 | 2015-11-10 |
High Power Insulated Gate Bipolar Transistors
App 20150287805 - Zhang; Qingchun ; et al. | 2015-10-08 |
Field effect transistor devices with low source resistance
Grant 9,142,662 - Ryu , et al. September 22, 2 | 2015-09-22 |
Monolithic bidirectional silicon carbide switching devices
Grant 9,136,371 - Ryu September 15, 2 | 2015-09-15 |
Field effect transistor devices with low source resistance
Grant 9,029,945 - Ryu , et al. May 12, 2 | 2015-05-12 |
Monolithic Bidirectional Silicon Carbide Switching Devices
App 20150069417 - Ryu; Sei-Hyung | 2015-03-12 |
Vertical Power Transistor With Built-in Gate Buffer
App 20140374773 - Ryu; Sei-Hyung ; et al. | 2014-12-25 |
Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
Grant 8,901,699 - Ryu , et al. December 2, 2 | 2014-12-02 |
Monolithic bidirectional silicon carbide switching devices
Grant 8,901,639 - Ryu December 2, 2 | 2014-12-02 |
Transistors with a gate insulation layer having a channel depleting interfacial charge and related fabrication methods
Grant 8,841,682 - Dhar , et al. September 23, 2 | 2014-09-23 |
Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same
Grant 8,803,277 - Henning , et al. August 12, 2 | 2014-08-12 |
Schottky Diode
App 20140145213 - Henning; Jason Patrick ; et al. | 2014-05-29 |
High power insulated gate bipolar transistors
Grant 8,710,510 - Zhang , et al. April 29, 2 | 2014-04-29 |
Schottky diode
Grant 8,680,587 - Henning , et al. March 25, 2 | 2014-03-25 |
Junction Barrier Schottky Diodes With Current Surge Capability
App 20140077228 - Zhang; Qingchun ; et al. | 2014-03-20 |
Schottky diode employing recesses for elements of junction barrier array
Grant 8,664,665 - Henning , et al. March 4, 2 | 2014-03-04 |
Junction Barrier Schottky diodes with current surge capability
Grant 8,653,534 - Zhang , et al. February 18, 2 | 2014-02-18 |
Monolithic Bidirectional Silicon Carbide Switching Devices And Methods Of Forming The Same
App 20140027781 - Ryu; Sei-Hyung | 2014-01-30 |
High voltage insulated gate bipolar transistors with minority carrier diverter
Grant 8,629,509 - Ryu , et al. January 14, 2 | 2014-01-14 |
Edge termination structure employing recesses for edge termination elements
Grant 8,618,582 - Henning , et al. December 31, 2 | 2013-12-31 |
Edge termination structure employing recesses for edge termination elements
Grant 08618582 - | 2013-12-31 |
Monolithic high voltage switching devices
Grant 8,610,130 - Ryu , et al. December 17, 2 | 2013-12-17 |
Power switching semiconductor devices including rectifying junction-shunts
Grant 8,546,874 - Hefner , et al. October 1, 2 | 2013-10-01 |
Bidirectional Silicon Carbide Transient Voltage Supression Devices
App 20130240908 - Haney; Sarah Kay ; et al. | 2013-09-19 |
High Current Density Power Module
App 20130207123 - Henning; Jason Patrick ; et al. | 2013-08-15 |
Vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistors
Grant 8,492,827 - Ryu July 23, 2 | 2013-07-23 |
Bipolar Junction Transistor Structure For Reduced Current Crowding
App 20130146894 - Cheng; Lin ; et al. | 2013-06-13 |
Bidirectional silicon carbide transient voltage suppression devices
Grant 8,445,917 - Haney , et al. May 21, 2 | 2013-05-21 |
Schottky Diode Employing Recesses For Elements Of Junction Barrier Array
App 20130062620 - Henning; Jason Patrick ; et al. | 2013-03-14 |
Edge Termination Structure Employing Recesses For Edge Termination Elements
App 20130062619 - Henning; Jason Patrick ; et al. | 2013-03-14 |
Schottky Diode
App 20130062723 - Henning; Jason Patrick ; et al. | 2013-03-14 |
Schottky diode structure with silicon mesa and junction barrier Schottky wells
Grant 8,384,181 - Zhang , et al. February 26, 2 | 2013-02-26 |
Forming Sic Mosfets With High Channel Mobility By Treating The Oxide Interface With Cesium Ions
App 20130034941 - Dhar; Sarit ; et al. | 2013-02-07 |
Solid-state pinch off thyristor circuits
Grant 8,354,690 - Callanan , et al. January 15, 2 | 2013-01-15 |
Wet Chemistry Processes For Fabricating A Semiconductor Device With Increased Channel Mobility
App 20120329216 - Dhar; Sarit ; et al. | 2012-12-27 |
Semiconductor Device With Increased Channel Mobility And Dry Chemistry Processes For Fabrication Thereof
App 20120326163 - Dhar; Sarit ; et al. | 2012-12-27 |
Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating same
Grant 8,330,244 - Zhang , et al. December 11, 2 | 2012-12-11 |
Sic Devices With High Blocking Voltage Terminated By A Negative Bevel
App 20120292636 - Zhang; Qingchun ; et al. | 2012-11-22 |
Semiconductor devices including electrodes with integrated resistances
Grant 8,314,462 - Hull , et al. November 20, 2 | 2012-11-20 |
Field Effect Transistor Devices with Low Source Resistance
App 20120280252 - Ryu; Sei-Hyung ; et al. | 2012-11-08 |
Field Effect Transistor Devices with Low Source Resistance
App 20120280270 - Ryu; Sei-Hyung ; et al. | 2012-11-08 |
Junction Barrier Schottky Diodes With Current Surge Capability
App 20120273802 - Zhang; Qingchun ; et al. | 2012-11-01 |
Semiconductor Device Having High Performance Channel
App 20120223330 - Dhar; Sarit ; et al. | 2012-09-06 |
Junction Termination Structures Including Guard Ring Extensions And Methods Of Fabricating Electronic Devices Incorporating Same
App 20120205666 - Henning; Jason ; et al. | 2012-08-16 |
Junction barrier Schottky diodes with current surge capability
Grant 8,232,558 - Zhang , et al. July 31, 2 | 2012-07-31 |
Power switching devices having controllable surge current capabilities
Grant 8,193,848 - Zhang , et al. June 5, 2 | 2012-06-05 |
Power Switching Semiconductor Devices Including Rectifying Junction-Shunts
App 20120068263 - Hefner; Allen ; et al. | 2012-03-22 |
Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations
Grant 8,124,480 - Ryu , et al. February 28, 2 | 2012-02-28 |
Vertical Jfet Limited Silicon Carbide Metal-oxide Semiconductor Field Effect Transistors
App 20110254016 - Ryu; Sei-Hyung | 2011-10-20 |
Methods of forming power switching semiconductor devices including rectifying junction-shunts
Grant 8,034,688 - Hefner , et al. October 11, 2 | 2011-10-11 |
Transistors With A Dielectric Channel Depletion Layer And Related Fabrication Methods
App 20110147764 - Dhar; Sarit ; et al. | 2011-06-23 |
Silicon Carbide Switching Devices Including P-Type Channels
App 20110121318 - Das; Mrinal Kanti ; et al. | 2011-05-26 |
Monolithic High Voltage Switching Devices And Related Methods Of Fabricating The Same
App 20110101374 - Ryu; Sei-Hyung ; et al. | 2011-05-05 |
Transistors with Semiconductor Interconnection Layers and Semiconductor Channel Layers of Different Semiconductor Materials
App 20110084284 - Zhang; Qingchun ; et al. | 2011-04-14 |
Methods of fabricating vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistors
Grant 7,923,320 - Ryu April 12, 2 | 2011-04-12 |
Methods Of Fabricating Silicon Carbide Devices Incorporating Multiple Floating Guard Ring Edge Terminations
App 20110081772 - Ryu; Sei Hyung ; et al. | 2011-04-07 |
Transistors With A Gate Insulation Layer Having A Channel Depleting Interfacial Charge And Related Fabrication Methods
App 20110049530 - Dhar; Sarit ; et al. | 2011-03-03 |
Solid-State Pinch Off Thyristor Circuits
App 20110049561 - Callanan; Robert J. ; et al. | 2011-03-03 |
Methods of forming silicon carbide switching devices including P-type channels
Grant 7,883,949 - Das , et al. February 8, 2 | 2011-02-08 |
Semiconductor Devices Including Electrodes with Integrated Resistances and Related Methods
App 20110024834 - Hull; Brett Adam ; et al. | 2011-02-03 |
Power Switching Devices Having Controllable Surge Current Capabilities
App 20100301929 - Zhang; Qingchun ; et al. | 2010-12-02 |
High Voltage Insulated Gate Bipolar Transistors with Minority Carrier Diverter
App 20100301335 - Ryu; Sei-Hyung ; et al. | 2010-12-02 |
Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations
Grant 7,842,549 - Ryu , et al. November 30, 2 | 2010-11-30 |
Bidirectional Silicon Carbide Transient Voltage Suppression Devices
App 20100237356 - Haney; Sarah Kay ; et al. | 2010-09-23 |
Semiconductor devices including schottky diodes with controlled breakdown
Grant 7,728,402 - Zhang , et al. June 1, 2 | 2010-06-01 |
Silicon carbide devices with hybrid well regions
Grant 7,705,362 - Das , et al. April 27, 2 | 2010-04-27 |
Power Switching Semiconductor Devices Including Rectifying Junction-Shunts
App 20100090271 - Hefner; Allen ; et al. | 2010-04-15 |
Semiconductor Devices Including Schottky Diodes Having Doped Regions Arranged As Islands And Methods Of Fabricating Same
App 20090315036 - Zhang; Qingchun ; et al. | 2009-12-24 |
Junction Barrier Schottky Diodes With Current Surge Capability
App 20090289262 - Zhang; Qingchun ; et al. | 2009-11-26 |
High voltage silicon carbide devices having bi-directional blocking capabilities
Grant 7,615,801 - Ryu , et al. November 10, 2 | 2009-11-10 |
Power switching semiconductor devices including rectifying junction-shunts
Grant 7,598,567 - Hefner , et al. October 6, 2 | 2009-10-06 |
Methods of Processing Semiconductor Wafers Having Silicon Carbide Power Devices Thereon
App 20090233418 - Agarwal; Anant ; et al. | 2009-09-17 |
Methods of processing semiconductor wafers having silicon carbide power devices thereon
Grant 7,547,578 - Agarwal , et al. June 16, 2 | 2009-06-16 |
Methods of Fabricating Silicon Carbide Devices Incorporating Multiple Floating Guard Ring Edge Terminations
App 20090035926 - Ryu; Sei-Hyung ; et al. | 2009-02-05 |
Methods of fabricating silicon carbide devices including multiple floating guard ring edge termination
Grant 7,419,877 - Ryu , et al. September 2, 2 | 2008-09-02 |
High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities
Grant 7,414,268 - Ryu , et al. August 19, 2 | 2008-08-19 |
Schottky Diode Structure with Silicon Mesa and Junction Barrier Schottky Wells
App 20080191304 - Zhang; Qingchun ; et al. | 2008-08-14 |
High voltage silicon carbide devices having bi-directional blocking capabilities
Grant 7,391,057 - Ryu , et al. June 24, 2 | 2008-06-24 |
Silicon carbide power devices with self-aligned source and well regions
Grant 7,381,992 - Ryu June 3, 2 | 2008-06-03 |
Power Switching Semiconductor Devices Including Rectifying Junction-shunts
App 20080121993 - Hefner; Allen ; et al. | 2008-05-29 |
High Power Insulated Gate Bipolar Transistors
App 20080105949 - Zhang; Qingchun ; et al. | 2008-05-08 |
Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof
Grant 7,345,310 - Agarwal , et al. March 18, 2 | 2008-03-18 |
Semiconductor devices including Schottky diodes with controlled breakdown and methods of fabricating same
App 20080029838 - Zhang; Qingchun ; et al. | 2008-02-07 |
Silicon Carbide Switching Devices Including P-type Channels And Methods Of Forming The Same
App 20080001158 - Das; Mrinal Kanti ; et al. | 2008-01-03 |
Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same
Grant 7,304,334 - Agarwal , et al. December 4, 2 | 2007-12-04 |
Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same
App 20070235757 - Agarwal; Anant K. ; et al. | 2007-10-11 |
Methods Of Fabricating Vertical Jfet Limited Silicon Carbide Metal-oxide Semiconductor Field Effect Transistors
App 20070158658 - Ryu; Sei Hyung | 2007-07-12 |
Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof, and methods of fabricating same
App 20070145378 - Agarwal; Anant K. ; et al. | 2007-06-28 |
Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
Grant 7,221,010 - Ryu May 22, 2 | 2007-05-22 |
Methods Of Processing Semiconductor Wafers Having Silicon Carbide Power Devices Thereon
App 20070066039 - Agarwal; Anant ; et al. | 2007-03-22 |
Silicon carbide devices with hybrid well regions
App 20060289874 - Das; Mrinal Kanti ; et al. | 2006-12-28 |
High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities and methods of fabricating the same
App 20060261347 - Ryu; Sei-Hyung ; et al. | 2006-11-23 |
High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same
App 20060261348 - Ryu; Sei-Hyung ; et al. | 2006-11-23 |
High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same
App 20060261346 - Ryu; Sei-Hyung ; et al. | 2006-11-23 |
High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same
App 20060261345 - Ryu; Sei-Hyung ; et al. | 2006-11-23 |
Silicon carbide junction barrier schottky diodes with supressed minority carrier injection
App 20060255423 - Ryu; Sei-Hyung ; et al. | 2006-11-16 |
Manufacturing methods for large area silicon carbide devices
Grant 7,135,359 - Agarwal , et al. November 14, 2 | 2006-11-14 |
Silicon Carbide Power Devices With Self-aligned Source And Well Regions
App 20060237728 - Ryu; Sei-Hyung | 2006-10-26 |
Methods of fabricating silicon carbide devices with hybrid well regions
Grant 7,118,970 - Das , et al. October 10, 2 | 2006-10-10 |
Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
Grant 7,074,643 - Ryu July 11, 2 | 2006-07-11 |
Edge termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
App 20060118792 - Ryu; Sei-Hyung ; et al. | 2006-06-08 |
Multiple floating guard ring edge termination for silicon carbide devices
Grant 7,026,650 - Ryu , et al. April 11, 2 | 2006-04-11 |
Multiple floating guard ring edge termination for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
App 20060054895 - Ryu; Sei-Hyung ; et al. | 2006-03-16 |
Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same
Grant 6,979,863 - Ryu December 27, 2 | 2005-12-27 |
Silicon carbide devices with hybrid well regions and methods of fabricating silicon carbide devices with hybrid well regions
App 20050280004 - Das, Mrinal Kanti ; et al. | 2005-12-22 |
Silicon Carbide Power Metal-oxide Semiconductor Field Effect Transistors Having A Shorting Channel And Methods Of Fabricating Silicon Carbide Metal-oxide Semiconductor Field Effect Transistors Having A Shorting Channel
Grant 6,956,238 - Ryu , et al. October 18, 2 | 2005-10-18 |
Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
App 20040211980 - Ryu, Sei-Hyung | 2004-10-28 |
Silicon Carbide Mosfets With Integrated Antiparallel Junction Barrier Schottky Free Wheeling Diodes And Methods Of Fabricating The Same
App 20040212011 - Ryu, Sei-Hyung | 2004-10-28 |
Manufacturing methods for large area silicon carbide devices
App 20040206976 - Agarwal, Anant ; et al. | 2004-10-21 |
Large area silicon carbide devices
Grant 6,770,911 - Agarwal , et al. August 3, 2 | 2004-08-03 |
Multiple floating guard ring edge termination for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
App 20040135153 - Ryu, Sei-Hyung ; et al. | 2004-07-15 |
Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors and methods of fabricating vertical JFET limited silicon carbide metal- oxide semiconductor field effect transistors
App 20040119076 - Ryu, Sei-Hyung | 2004-06-24 |
Silicon carbide inversion channel mosfets
Grant 6,653,659 - Ryu , et al. November 25, 2 | 2003-11-25 |
Large area silicon carbide devices
App 20030047748 - Agarwal, Anant ; et al. | 2003-03-13 |
Large area silicon carbide devices and manufacturing methods therefor
Grant 6,514,779 - Ryu , et al. February 4, 2 | 2003-02-04 |
Silicon carbide inversion channel mosfets
App 20020149022 - Ryu, Sei-Hyung ; et al. | 2002-10-17 |
Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation
Grant 6,429,041 - Ryu , et al. August 6, 2 | 2002-08-06 |
Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
App 20020038891 - Ryu, Sei-Hyung ; et al. | 2002-04-04 |
Self-aligned bipolar junction silicon carbide transistors
Grant 6,329,675 - Singh , et al. December 11, 2 | 2001-12-11 |
Self-aligned bipolar junction silicon carbide transistors
App 20010011729 - Singh, Ranbir ; et al. | 2001-08-09 |
Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices
Grant 6,218,254 - Singh , et al. April 17, 2 | 2001-04-17 |
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