loadpatents
name:-0.11540102958679
name:-0.098459959030151
name:-0.0012791156768799
Quek; Elgin Patent Filings

Quek; Elgin

Patent Applications and Registrations

Patent applications and USPTO patent grants for Quek; Elgin.The latest application filed is for "fin selector with gated rram".

Company Profile
1.127.117
  • Quek; Elgin - Singapore SG
  • Quek; Elgin - Sinagpore N/A SG
  • Quek; Elgin - US
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Fin selector with gated RRAM
Grant 10,424,732 - Toh , et al. Sept
2019-09-24
LDMOS with improved breakdown voltage and with non-uniformed gate dielectric and gate electrode
Grant 10,032,902 - Toh , et al. July 24, 2
2018-07-24
Corner transistor suppression
Grant 9,905,642 - Tan , et al. February 27, 2
2018-02-27
Fin Selector With Gated Rram
App 20180033963 - TOH; Eng Huat ;   et al.
2018-02-01
Compact RRAM structure with contact-less unit cell
Grant 9,847,377 - Tan , et al. December 19, 2
2017-12-19
Fin selector with gated RRAM
Grant 9,825,223 - Toh , et al. November 21, 2
2017-11-21
Transistor devices having an anti-fuse configuration and methods of forming the same
Grant 9,431,497 - Toh , et al. August 30, 2
2016-08-30
Compact Rram Structure With Contact-less Unit Cell
App 20160247857 - TAN; Shyue Seng ;   et al.
2016-08-25
Corner Transistor Suppression
App 20160240611 - TAN; Shyue Seng ;   et al.
2016-08-18
FinFET
Grant 9,406,801 - Toh , et al. August 2, 2
2016-08-02
Compact RRAM structure with contact-less unit cell
Grant 9,401,473 - Tan , et al. July 26, 2
2016-07-26
Corner transistor suppression
Grant 9,368,386 - Tan , et al. June 14, 2
2016-06-14
Self-aligned contact for replacement metal gate and silicide last processes
Grant 9,362,274 - Toh , et al. June 7, 2
2016-06-07
Memory cell with decoupled channels
Grant 9,343,472 - Tan , et al. May 17, 2
2016-05-17
Double Gated Flash Memory
App 20160093630 - TAN; Shyue Seng (Jason) ;   et al.
2016-03-31
Method to tune narrow width effect with raised S/D structure
Grant 9,281,308 - Yin , et al. March 8, 2
2016-03-08
Three dimensional RRAM device, and methods of making same
Grant 9,276,041 - Toh , et al. March 1, 2
2016-03-01
Double gated flash memory
Grant 9,263,132 - Tan , et al. February 16, 2
2016-02-16
Finfet With Stressors
App 20160035873 - TOH; Eng Huat ;   et al.
2016-02-04
Floating body cell
Grant 9,252,270 - Tan , et al. February 2, 2
2016-02-02
LDMOS with improved breakdown voltage
Grant 9,219,147 - Toh , et al. December 22, 2
2015-12-22
Ldmos With Improved Breakdown Voltage
App 20150325697 - TOH; Eng Huat ;   et al.
2015-11-12
RRAM structure at STI with Si-based selector
Grant 9,184,215 - Tan , et al. November 10, 2
2015-11-10
FinFET with stressors
Grant 9,171,953 - Toh , et al. October 27, 2
2015-10-27
Split-gate Flash Memory Exhibiting Reduced Interference
App 20150255471 - TOH; Eng Huat ;   et al.
2015-09-10
Novel Compact Charge Trap Multi-time Programmable Memory
App 20150236034 - TOH; Eng Huat ;   et al.
2015-08-20
Fin Selector With Gated Rram
App 20150221867 - TOH; Eng Huat ;   et al.
2015-08-06
Method and apparatus for embedded NVM utilizing an RMG process
Grant 9,093,551 - Toh , et al. July 28, 2
2015-07-28
Compact localized RRAM cell structure realized by spacer technology
Grant 9,087,988 - Tan , et al. July 21, 2
2015-07-21
Compact Localized Rram Cell Structure Realized By Spacer Technology
App 20150188047 - TAN; Shyue Seng ;   et al.
2015-07-02
Split-gate flash memory exhibiting reduced interference
Grant 9,064,803 - Toh , et al. June 23, 2
2015-06-23
Compact charge trap multi-time programmable memory
Grant 9,054,209 - Toh , et al. June 9, 2
2015-06-09
LDMOS with two gate stacks having different work functions for improved breakdown voltage
Grant 9,034,711 - Toh , et al. May 19, 2
2015-05-19
P-channel flash with enhanced band-to-band tunneling hot electron injection
Grant 9,029,227 - Toh , et al. May 12, 2
2015-05-12
Fin selector with gated RRAM
Grant 9,029,231 - Toh , et al. May 12, 2
2015-05-12
Fin-type Memory
App 20150123068 - TOH; Eng Huat ;   et al.
2015-05-07
Memory Cell With Decoupled Channels
App 20150104915 - TAN; Shyue Seng ;   et al.
2015-04-16
Stress liner for stress engineering
Grant 8,999,863 - Lee , et al. April 7, 2
2015-04-07
Compact localized RRAM cell structure realized by spacer technology
Grant 8,993,407 - Tan , et al. March 31, 2
2015-03-31
Finfet
App 20150069512 - TOH; Eng Huat ;   et al.
2015-03-12
Semiconductor device with reduced contact resistance and method of manufacturing thereof
Grant 8,975,708 - Toh , et al. March 10, 2
2015-03-10
Integration of memory, high voltage and logic devices
Grant 8,957,470 - Tang , et al. February 17, 2
2015-02-17
Integrated circuits having improved split-gate nonvolatile memory devices and methods for fabrication of same
Grant 8,945,997 - Zhang , et al. February 3, 2
2015-02-03
Memory cell with decoupled channels
Grant 8,946,806 - Tan , et al. February 3, 2
2015-02-03
Diffusion Barrier And Method Of Formation Thereof
App 20150008528 - TAN; Shyue Seng ;   et al.
2015-01-08
Integrated Circuits Having Improved Split-gate Nonvolatile Memory Devices And Methods For Fabrication Of Same
App 20150001610 - Zhang; Zufa ;   et al.
2015-01-01
Transistor Devices Having An Anti-fuse Configuration And Methods Of Forming The Same
App 20140346603 - Toh; Eng Huat ;   et al.
2014-11-27
Fin-type memory
Grant 8,895,402 - Toh , et al. November 25, 2
2014-11-25
Finfet
Grant 8,889,494 - Toh , et al. November 18, 2
2014-11-18
Novel Method To Tune Narrow Width Effect With Raised S/d Structure
App 20140332902 - Yin; Chunshan ;   et al.
2014-11-13
Fin Selector With Gated Rram
App 20140264228 - TOH; Eng Huat ;   et al.
2014-09-18
Non-volatile memory using pyramidal nanocrystals as electron storage elements
Grant 8,824,208 - Quek , et al. September 2, 2
2014-09-02
Ldmos With Improved Breakdown Voltage
App 20140239391 - TOH; Eng Huat ;   et al.
2014-08-28
Method to tune narrow width effect with raised S/D structure
Grant 8,785,287 - Yin , et al. July 22, 2
2014-07-22
Multi-time programmable non-volatile memory
Grant 8,772,108 - Toh , et al. July 8, 2
2014-07-08
Floating Body Cell
App 20140167161 - Tan; Shyue Seng ;   et al.
2014-06-19
Novel Rram Structure At Sti With Si-based Selector
App 20140158970 - TAN; Shyue Seng ;   et al.
2014-06-12
Non-volatile memory utilizing impact ionization and tunnelling and method of manufacturing thereof
Grant 8,750,037 - Toh , et al. June 10, 2
2014-06-10
LDMOS with improved breakdown voltage
Grant 8,748,271 - Toh , et al. June 10, 2
2014-06-10
Compact Rram Structure With Contact-less Unit Cell
App 20140138603 - TAN; Shyue Seng ;   et al.
2014-05-22
Compact Localized Rram Cell Structure Realized By Spacer Technology
App 20140138605 - TAN; Shyue Seng ;   et al.
2014-05-22
Compact RRAM device and methods of making same
Grant 8,698,118 - Toh , et al. April 15, 2
2014-04-15
RRAM structure at STI with Si-based selector
Grant 8,685,799 - Tan , et al. April 1, 2
2014-04-01
RRAM device with an embedded selector structure and methods of making same
Grant 8,674,332 - Toh , et al. March 18, 2
2014-03-18
Methods to reduce gate contact resistance for AC reff reduction
Grant 8,674,457 - Toh , et al. March 18, 2
2014-03-18
Novel Rram Structure At Sti With Si-based Selector
App 20140070159 - Tan; Shyue Seng ;   et al.
2014-03-13
Fin-type Memory
App 20140061576 - TOH; Eng Huat ;   et al.
2014-03-06
Novel Compact Charge Trap Multi-time Programmable Memory
App 20140048865 - TOH; Eng Huat ;   et al.
2014-02-20
Multi-time Programmable Memory
App 20140048867 - TOH; Eng Huat ;   et al.
2014-02-20
Modifying growth rate of a device layer
Grant 8,633,081 - Yin , et al. January 21, 2
2014-01-21
Method And Apparatus For Embedded Nvm Utilizing An Rmg Process
App 20140008713 - Toh; Eng Huat ;   et al.
2014-01-09
Integration Of Memory, High Voltage And Logic Devices
App 20130334584 - TANG; Yan Zhe ;   et al.
2013-12-19
Non-volatile Memory Using Pyramidal Nanocrystals As Electron Storage Elements
App 20130328118 - Quek; Elgin ;   et al.
2013-12-12
Finfet With Stressors
App 20130307038 - TOH; Eng Huat ;   et al.
2013-11-21
Localized Device
App 20130299764 - TAN; Shyue Seng ;   et al.
2013-11-14
Method And Apparatus For Utilizing Contact-sidewall Capacitance In A Single Poly Non-volatile Memory Cell
App 20130292756 - Tang; Yan Zhe ;   et al.
2013-11-07
Corner Transistor Suppression
App 20130288452 - TAN; Shyue Seng ;   et al.
2013-10-31
Rram Device With An Embedded Selector Structure And Methods Of Making Same
App 20130270501 - Toh; Eng Huat ;   et al.
2013-10-17
Semiconductor Device With Reduced Contact Resistance And Method Of Manufacturing Thereof
App 20130270654 - Toh; Eng Huat ;   et al.
2013-10-17
Three Dimensional Rram Device, And Methods Of Making Same
App 20130240821 - Toh; Eng Huat ;   et al.
2013-09-19
RRAM structure with improved memory margin
Grant 8,536,558 - Tan , et al. September 17, 2
2013-09-17
Self-aligned Contact For Replacement Metal Gate And Silicide Last Processes
App 20130234253 - TOH; Eng Huat ;   et al.
2013-09-12
Memory cell with improved retention
Grant 8,530,310 - Teo , et al. September 10, 2
2013-09-10
Compact Rram Device And Methods Of Making Same
App 20130221308 - Toh; Eng Huat ;   et al.
2013-08-29
Nano-electro-mechanical system (NEMS) structures with actuatable semiconductor fin on bulk substrates
Grant 8,502,279 - Toh , et al. August 6, 2
2013-08-06
FinFET with stressors
Grant 8,492,235 - Toh , et al. July 23, 2
2013-07-23
Semiconductor device with reduced contact resistance and method of manufacturing thereof
Grant 8,470,700 - Toh , et al. June 25, 2
2013-06-25
Non-volatile memory using pyramidal nanocrystals as electron storage elements
Grant 8,446,779 - Quek , et al. May 21, 2
2013-05-21
Self-aligned contact for replacement metal gate and silicide last processes
Grant 8,440,533 - Toh , et al. May 14, 2
2013-05-14
Diffusion Barrier And Method Of Formation Thereof
App 20130087889 - TAN; Shyue Seng ;   et al.
2013-04-11
Double Gated Flash Memory
App 20130037877 - Tan; Shyue Seng (Jason) ;   et al.
2013-02-14
Method of fabricating a silicon tunneling field effect transistor (TFET) with high drive current
Grant 8,368,127 - Zhu , et al. February 5, 2
2013-02-05
Split-gate Flash Memory Exhibiting Reduced Interference
App 20130026552 - Toh; Eng Huat ;   et al.
2013-01-31
Memory Cell With Decoupled Channels
App 20130020626 - TAN; Shyue Seng ;   et al.
2013-01-24
Diffusion barrier and method of formation thereof
Grant 8,324,031 - Tan , et al. December 4, 2
2012-12-04
Nano-electro-mechanical System (nems) Structures On Bulk Substrates
App 20120292707 - Toh; Eng Huat ;   et al.
2012-11-22
Corner Transistor Suppression
App 20120292735 - Tan; Shyue Seng (Jason) ;   et al.
2012-11-22
Hybrid transistor
Grant 8,288,800 - Zhu , et al. October 16, 2
2012-10-16
Ldmos With Improved Breakdown Voltage
App 20120228705 - Toh; Eng Huat ;   et al.
2012-09-13
Ldmos With Improved Breakdown Voltage
App 20120228695 - Toh; Eng Huat ;   et al.
2012-09-13
Self-aligned Contact For Replacement Metal Gate And Silicide Last Processes
App 20120223394 - Toh; Eng Huat ;   et al.
2012-09-06
P-channel Flash With Enhanced Band-to-band Tunneling Hot Electron Injection
App 20120223318 - Toh; Eng Huat ;   et al.
2012-09-06
Buried Channel Finfet Sonos With Improved P/e Cycling Endurance
App 20120217467 - Tan; Shyue Seng (Jason) ;   et al.
2012-08-30
Non-volatile memory manufacturing method using STI trench implantation
Grant 8,236,646 - Chan , et al. August 7, 2
2012-08-07
Finfet With Stressors
App 20120171832 - TOH; Eng Huat ;   et al.
2012-07-05
Finfet
App 20120168913 - TOH; Eng Huat ;   et al.
2012-07-05
Modifying Growth Rate Of A Device Layer
App 20120168895 - YIN; Chunshan ;   et al.
2012-07-05
Control gate structure and method of forming a control gate structure
App 20120112256 - Tan; Shyue Seng ;   et al.
2012-05-10
Modulation of stress in stress film through ion implantation and its application in stress memorization technique
Grant 8,119,541 - Teo , et al. February 21, 2
2012-02-21
Novel methods to reduce gate contact resistance for AC reff reduction
App 20120038009 - Toh; Eng Huat ;   et al.
2012-02-16
Semiconductor device with reduced contact resistance and method of manufacturing thereof
App 20120018815 - Toh; Eng Huat ;   et al.
2012-01-26
Novel method to tune narrow width effect with raised S/D structure
App 20120007185 - Yin; Chunshan ;   et al.
2012-01-12
Strain-direct-on-insulator (sdoi) Substrate And Method Of Forming
App 20110278645 - Teo; Lee Wee ;   et al.
2011-11-17
Selective STI stress relaxation through ion implantation
Grant 8,008,744 - Teo , et al. August 30, 2
2011-08-30
Strain-direct-on-insulator (SDOI) substrate and method of forming
Grant 7,998,835 - Teo , et al. August 16, 2
2011-08-16
Hybrid Transistor
App 20110163356 - ZHU; Ming ;   et al.
2011-07-07
Memory Cell With Improved Retention
App 20110156121 - Teo; Lee Wee ;   et al.
2011-06-30
Enhanced stress for transistors
Grant 7,935,589 - Teo , et al. May 3, 2
2011-05-03
Method of fabricating a silicon tunneling field effect transistor (TFET) with high drive current
App 20110084319 - Zhu; Ming ;   et al.
2011-04-14
Non-volatile memory using pyramidal nanocrystals as electron storage elements
App 20110044115 - Quek; Elgin ;   et al.
2011-02-24
Selective stress relaxation of contact etch stop layer through layout design
Grant 7,888,214 - Teo , et al. February 15, 2
2011-02-15
Non-volatile memory utilizing impact ionization and tunnelling and method of manufacturing thereof
App 20100315884 - Toh; Eng Huat ;   et al.
2010-12-16
Avoiding plasma charging in integrated circuits
Grant 7,846,800 - Tan , et al. December 7, 2
2010-12-07
Selective Sti Stress Relaxation Through Ion Implantation
App 20100230777 - TEO; Lee Wee ;   et al.
2010-09-16
Selective STI stress relaxation through ion implantation
Grant 7,727,856 - Teo , et al. June 1, 2
2010-06-01
Diffusion Barrier And Method Of Formation Thereof
App 20090315152 - TAN; Shyue Seng ;   et al.
2009-12-24
Stress Liner For Stress Engineering
App 20090302391 - LEE; Jae Gon ;   et al.
2009-12-10
Pfet Enhancement During Smt
App 20090302401 - TEO; Lee Wee ;   et al.
2009-12-10
Modulation of Stress in Stress Film through Ion Implantation and Its Application in Stress Memorization Technique
App 20090286365 - Teo; Lee Wee ;   et al.
2009-11-19
Enhanced Stress For Transistors
App 20090267117 - TEO; Lee Wee ;   et al.
2009-10-29
Modulation of stress in stress film through ion implantation and its application in stress memorization technique
Grant 7,592,270 - Teo , et al. September 22, 2
2009-09-22
Avoiding Plasma Charging In Integrated Circuits
App 20090224326 - TAN; Chung Foong ;   et al.
2009-09-10
Strain-direct-on-insulator (SDOI) substrate and method of forming
App 20090179226 - Teo; Lee Wee ;   et al.
2009-07-16
Selective STI Stress Relaxation Through Ion Implantation
App 20080150037 - Teo; Lee Wee ;   et al.
2008-06-26
Modulation of Stress in Stress Film through Ion Implantation and Its Application in Stress Memorization Technique
App 20080064191 - Teo; Lee Wee ;   et al.
2008-03-13
Thyristor-based SRAM
Grant 7,285,804 - Quek , et al. October 23, 2
2007-10-23
Modulation of stress in stress film through ion implantation and its application in stress memorization technique
App 20070141775 - Teo; Lee Wee ;   et al.
2007-06-21
Selective stress relaxation of contact etch stop layer through layout design
App 20070132032 - Teo; Lee Wee ;   et al.
2007-06-14
Material architecture for the fabrication of low temperature transistor
Grant 7,169,675 - Tan , et al. January 30, 2
2007-01-30
Thyristor-based SRAM
Grant 7,148,522 - Quek , et al. December 12, 2
2006-12-12
Shallow amorphizing implant for gettering of deep secondary end of range defects
Grant 7,071,069 - Tan , et al. July 4, 2
2006-07-04
Method of activating polysilicon gate structure dopants after offset spacer deposition
Grant 6,969,646 - Quek , et al. November 29, 2
2005-11-29
Method for integrating a SONOS gate oxide transistor into a logic/analog integrated circuit having several gate oxide thicknesses
Grant 6,946,349 - Lee , et al. September 20, 2
2005-09-20
Thyristor-based SRAM
App 20050167664 - Quek, Elgin ;   et al.
2005-08-04
Method of forming a pocket implant region after formation of composite insulator spacers
Grant 6,924,180 - Quek August 2, 2
2005-08-02
Shallow amorphizing implant for gettering of deep secondary end of range defects
App 20050136623 - Tan, Chung Foong ;   et al.
2005-06-23
Method using quasi-planar double gated fin field effect transistor process for the fabrication of a thyristor-based static read/write random-access memory
Grant 6,897,111 - Quek , et al. May 24, 2
2005-05-24
Non-volatile memory and manufacturing method using STI trench implantation
App 20050101102 - Chan, Tze Ho Simon ;   et al.
2005-05-12
Thyristor-based SRAM
App 20050098794 - Quek, Elgin ;   et al.
2005-05-12
Method to produce dual gates (one metal and one poly or metal silicide) for CMOS devices using sputtered metal deposition, metallic ion implantation, or silicon implantation, and laser annealing
App 20050101083 - Ang, Chew Hoe ;   et al.
2005-05-12
Method to pattern small features by using a re-flowable hard mask
App 20050089777 - Ang, Chew-Hoe ;   et al.
2005-04-28
Thyristor-based Sram And Method For The Fabrication Thereof
App 20050026337 - Quek, Elgin ;   et al.
2005-02-03
Thyistor-based SRAM and method using quasi-planar finfet process for the fabrication thereof
App 20050026343 - Quek, Elgin ;   et al.
2005-02-03
Thyristor-based SRAM and method for the fabrication thereof
Grant 6,849,481 - Quek , et al. February 1, 2
2005-02-01
Method to produce dual gates (one metal and one poly or metal silicide) for CMOS devices using sputtered metal deposition, metallic ion implantation, or silicon implantation, and laser annealing
Grant 6,841,441 - Ang , et al. January 11, 2
2005-01-11
Formation of small gates beyond lithographic limits
App 20040266155 - Ang, Chew Hoe ;   et al.
2004-12-30
Method to pattern small features by using a re-flowable hard mask
Grant 6,828,082 - Ang , et al. December 7, 2
2004-12-07
Method of integrating L-shaped spacers in a high performance CMOS process via use of an oxide-nitride-doped oxide spacer
Grant 6,815,355 - Quek November 9, 2
2004-11-09
Method of activating polysilicon gate structure dopants after offset spacer deposition
App 20040164320 - Quek, Elgin ;   et al.
2004-08-26
Method of forming a pocket implant region after formation of composite insulator spacers
App 20040157397 - Quek, Elgin
2004-08-12
Method to produce dual gates (one metal and one poly or metal silicide) for CMOS devices using sputtered metal deposition, metallic ion implantation, or silicon implantation, and laser annealing
App 20040132271 - Ang, Chew Hoe ;   et al.
2004-07-08
Method to form a self-aligned CMOS inverter using vertical device integration
Grant 6,747,314 - Sundaresan , et al. June 8, 2
2004-06-08
Method of integrating L - shaped spacers in a high performance CMOS process via use of an oxide - nitride - doped oxide spacer
App 20040072435 - Quek, Elgin
2004-04-15
Method for forming variable-K gate dielectric
Grant 6,709,934 - Lee , et al. March 23, 2
2004-03-23
Method to fabricate a single gate with dual work-functions
Grant 6,664,153 - Ang , et al. December 16, 2
2003-12-16
Method of fabricating variable length vertical transistors
Grant 6,632,712 - Ang , et al. October 14, 2
2003-10-14
Forming dual gate oxide thickness on vertical transistors by ion implantation
Grant 6,610,575 - Ang , et al. August 26, 2
2003-08-26
Method of forming small transistor gates by using self-aligned reverse spacer as a hard mask
Grant 6,610,604 - Ang , et al. August 26, 2
2003-08-26
Method to fabricate a single gate with dual work-functions
App 20030153139 - Ang, Chew Hoe ;   et al.
2003-08-14
Method to pattern small features by using a re-flowable hard mask
App 20030152871 - Ang, Chew-Hoe ;   et al.
2003-08-14
Method of fabricating CMOS device with dual gate electrode
Grant 6,605,501 - Ang , et al. August 12, 2
2003-08-12
Method Of Forming Small Transistor Gates By Using Self-aligned Reverse Spacer As A Hard Mask
App 20030148617 - Ang, Chew-Hoe ;   et al.
2003-08-07
Method to form elevated source/drain using poly spacer
Grant 6,566,208 - Pan , et al. May 20, 2
2003-05-20
Method to form a self-aligned CMOS inverter using vertical device integration
App 20030075758 - Sundaresan, Ravi ;   et al.
2003-04-24
Method to form a vertical transistor by first forming a gate/spacer stack, then using selective epitaxy to form source, drain and channel
Grant 6,544,824 - Pradeep , et al. April 8, 2
2003-04-08
Method to form elevated source/drain using poly spacer
App 20030022450 - Pan, Yang ;   et al.
2003-01-30
Method to improve latchup by forming selective sloped staircase STI structure to use in the I/0 or latchup sensitive area
App 20030017710 - Yang, Pan ;   et al.
2003-01-23
Method for forming variable-K gate dielectric
App 20020173106 - Lee, James Yong Meng ;   et al.
2002-11-21
Method to form an air-gap under the edges of a gate electrode by using disposable spacer/liner
Grant 6,468,877 - Pradeep , et al. October 22, 2
2002-10-22
Method to form a self-aligned CMOS inverter using vertical device integration
Grant 6,461,900 - Sundaresan , et al. October 8, 2
2002-10-08
Method to control the channel length of a vertical transistor by first forming channel using selective epi and source/drain using implantation
Grant 6,436,770 - Leung , et al. August 20, 2
2002-08-20
Method to form high k dielectric and silicide to reduce poly depletion by using a sacrificial metal between oxide and gate
Grant 6,429,109 - Zheng , et al. August 6, 2
2002-08-06
Method For Fabricating A Self Aligned S/d Cmos Device On Insulated Layer By Forming A Trench Along The Sti And Fill With Oxide
App 20020102798 - Zheng, Jia Zhen ;   et al.
2002-08-01
Method for forming variable-K gate dielectric
App 20020100947 - Lee, James Yong Meng ;   et al.
2002-08-01
Method to form a vertical transistor by selective epitaxial growth and delta doped silicon layers
App 20020102784 - Lee, James Yong Meng ;   et al.
2002-08-01
Method to form very high mobility vertical channel transistor by selective deposition of SiGe or multi-quantum wells (MQWs)
App 20020098655 - Zheng, Jia Zhen ;   et al.
2002-07-25
Method for fabricating a self aligned S/D CMOS device on insulated layer by forming a trench along the STI and fill with oxide
Grant 6,417,054 - Zheng , et al. July 9, 2
2002-07-09
Method to form low-overlap-capacitance transistors by forming microtrench at the gate edge
Grant 6,417,056 - Quek , et al. July 9, 2
2002-07-09
Method to form a low parasitic capacitance pseudo-SOI CMOS device
Grant 6,403,485 - Quek , et al. June 11, 2
2002-06-11
Method to form a recessed source drain on a trench side wall with a replacement gate technique
Grant 6,380,088 - Chan , et al. April 30, 2
2002-04-30
Method to form a balloon shaped STI using a micro machining technique to remove heavily doped silicon
Grant 6,313,008 - Leung , et al. November 6, 2
2001-11-06
Method to form smaller channel with CMOS device by isotropic etching of the gate materials
Grant 6,306,715 - Chan , et al. October 23, 2
2001-10-23
Method to form transistors with multiple threshold voltages (VT) using a combination of different work function gate materials
Grant 6,300,177 - Sundaresan , et al. October 9, 2
2001-10-09
Dislocation free local oxidation of silicon with suppression of narrow space field oxide thinning effect
Grant 5,894,059 - Peidous , et al. April 13, 1
1999-04-13

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