Palmour; John Williams

Patent Applications and Registrations

Patent applications and USPTO patent grants for Palmour; John Williams.The latest application filed is for "power module for supporting high current densities".

Company Profile

8.40.32

Palmour; John Williams - Cary NC
- Cary NC US
Palmour, John Williams - Raleigh NC

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Passivation structure for semiconductor devices Grant RE49,167 - Mieczkowski , et al. August 9, 2	2022-08-09
Low switching loss high performance power module Grant 11,171,229 - Das , et al. November 9, 2	2021-11-09
Power module for supporting high current densities Grant 11,024,731 - Henning , et al. June 1, 2	2021-06-01
Seminconductor device with spreading layer Grant 10,950,719 - Pala , et al. March 16, 2	2021-03-16
Semiconductor device with improved insulated gate Grant 10,910,481 - Lichtenwalner , et al. February 2, 2	2021-02-02
Vertical power transistor device Grant RE48,380 - Pala , et al. January 5, 2	2021-01-05
Monolithically integrated vertical power transistor and bypass diode Grant 10,868,169 - Pala , et al. December 15, 2	2020-12-15
Power Module For Supporting High Current Densities App 20190067468 - Henning; Jason Patrick ; et al.	2019-02-28
Power module having a switch module for supporting high current densities Grant 10,153,364 - Henning , et al. Dec	2018-12-11
High current, low switching loss SiC power module Grant 10,141,302 - Das , et al. Nov	2018-11-27
Passivation structure for semiconductor devices Grant 9,991,399 - Mieczkowski , et al. June 5, 2	2018-06-05
Schottky diode Grant 9,865,750 - Henning , et al. January 9, 2	2018-01-09
Power Module For Supporting High Current Densities App 20170263713 - Henning; Jason Patrick ; et al.	2017-09-14
Vertical power transistor device Grant 9,741,842 - Pala , et al. August 22, 2	2017-08-22
High Performance Power Module App 20170213811 - Das; Mrinal K. ; et al.	2017-07-27
Power module for supporting high current densities Grant 9,673,283 - Henning , et al. June 6, 2	2017-06-06
High performance power module Grant 9,640,617 - Das , et al. May 2, 2	2017-05-02
Enhanced gate dielectric for a field effect device with a trenched gate Grant 9,570,570 - Lichtenwalner , et al. February 14, 2	2017-02-14
Vertical Power Transistor Device App 20160211360 - Pala; Vipindas ; et al.	2016-07-21
Wet chemistry processes for fabricating a semiconductor device with increased channel mobility Grant 9,396,946 - Dhar , et al. July 19, 2	2016-07-19
HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE App 20160204101 - Das; Mrinal K. ; et al.	2016-07-14
High current, low switching loss SiC power module Grant 9,373,617 - Das , et al. June 21, 2	2016-06-21
SiC devices with high blocking voltage terminated by a negative bevel Grant 9,349,797 - Cheng , et al. May 24, 2	2016-05-24
Semiconductor Device With Improved Insulated Gate App 20160126333 - Lichtenwalner; Daniel Jenner ; et al.	2016-05-05
Vertical power transistor device Grant 9,331,197 - Pala , et al. May 3, 2	2016-05-03
Layout configurations for integrating schottky contacts into a power transistor device Grant 9,318,597 - Pala , et al. April 19, 2	2016-04-19
Passivation For Semiconductor Devices App 20160093748 - Mieczkowski; Van ; et al.	2016-03-31
Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof Grant 9,269,580 - Dhar , et al. February 23, 2	2016-02-23
Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layer Grant 9,236,433 - Pala , et al. January 12, 2	2016-01-12
Schottky diode Grant 9,231,122 - Henning , et al. January 5, 2	2016-01-05
Schottky Diode App 20150333191 - Henning; Jason Patrick ; et al.	2015-11-19
Field effect device with enhanced gate dielectric structure Grant 9,111,919 - Lichtenwalner , et al. August 18, 2	2015-08-18
Semiconductor Devices In Sic Using Vias Through N-type Substrate For Backside Contact To P-type Layer App 20150102361 - Pala; Vipindas ; et al.	2015-04-16
Field Effect Device With Enhanced Gate Dielectric Structure App 20150097226 - Lichtenwalner; Daniel Jenner ; et al.	2015-04-09
Monolithically Integrated Vertical Power Transistor And Bypass Diode App 20150084125 - Pala; Vipindas ; et al.	2015-03-26
Layout Configurations For Integrating Schottky Contacts Into A Power Transistor Device App 20150084119 - Pala; Vipindas ; et al.	2015-03-26
Monolithically Integrated Vertical Power Transistor And Bypass Diode App 20150084062 - Pala; Vipindas ; et al.	2015-03-26
Vertical Power Transistor Device App 20150041886 - Pala; Vipindas ; et al.	2015-02-12
Enhanced Gate Dielectric For A Field Effect Device With A Trenched Gate App 20150021623 - Lichtenwalner; Daniel Jenner ; et al.	2015-01-22
HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE App 20140246681 - Das; Mrinal K. ; et al.	2014-09-04
Schottky Diode App 20140145213 - Henning; Jason Patrick ; et al.	2014-05-29
Schottky diode Grant 8,680,587 - Henning , et al. March 25, 2	2014-03-25
Schottky diode employing recesses for elements of junction barrier array Grant 8,664,665 - Henning , et al. March 4, 2	2014-03-04
Edge termination structure employing recesses for edge termination elements Grant 8,618,582 - Henning , et al. December 31, 2	2013-12-31
Edge termination structure employing recesses for edge termination elements Grant 08618582 -	2013-12-31
High Current Density Power Module App 20130207123 - Henning; Jason Patrick ; et al.	2013-08-15
Edge Termination Structure Employing Recesses For Edge Termination Elements App 20130062619 - Henning; Jason Patrick ; et al.	2013-03-14
Schottky Diode Employing Recesses For Elements Of Junction Barrier Array App 20130062620 - Henning; Jason Patrick ; et al.	2013-03-14
Schottky Diode App 20130062723 - Henning; Jason Patrick ; et al.	2013-03-14
Sic Devices With High Blocking Voltage Terminated By A Negative Bevel App 20130026493 - Cheng; Lin ; et al.	2013-01-31
Wet Chemistry Processes For Fabricating A Semiconductor Device With Increased Channel Mobility App 20120329216 - Dhar; Sarit ; et al.	2012-12-27
Semiconductor Device With Increased Channel Mobility And Dry Chemistry Processes For Fabrication Thereof App 20120326163 - Dhar; Sarit ; et al.	2012-12-27
Dielectric passivation for semiconductor devices Grant 7,332,795 - Smith , et al. February 19, 2	2008-02-19
Dielectric passivation for semiconductor devices App 20050258431 - Smith, Richard Peter ; et al.	2005-11-24
Nitride based transistors on semi-insulating silicon carbide substrates App 20030201459 - Sheppard, Scott Thomas ; et al.	2003-10-30
Nitride based transistors on semi-insulating silicon carbide substrates Grant 6,583,454 - Sheppard , et al. June 24, 2	2003-06-24
Nitride based transistors on semi-insulating silicon carbide substrates Grant 6,486,502 - Sheppard , et al. November 26, 2	2002-11-26
Nitride based transistors on semi-insulating silicon carbide substrates Grant 6,316,793 - Sheppard , et al. November 13, 2	2001-11-13
Nitride based transistors on semi-insulating silicon carbide substrates App 20010017370 - Sheppard, Scott Thomas ; et al.	2001-08-30
Layered dielectric on silicon carbide semiconductor structures Grant 6,246,076 - Lipkin , et al. June 12, 2	2001-06-12
Silicon carbide MOSFET having self-aligned gate structure Grant 5,726,463 - Brown , et al. March 10, 1	1998-03-10