Monroy; Gonzalo Antonio

Patent Applications and Registrations

Patent applications and USPTO patent grants for Monroy; Gonzalo Antonio.The latest application filed is for "plasma reactor with electron beam of secondary electrons".

Company Profile

1.9.18

Monroy; Gonzalo Antonio - San Francisco CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Deposition or treatment of diamond-like carbon in a plasma reactor Grant 10,544,505 - Yang , et al. Ja	2020-01-28
Alternating Between Deposition And Treatment Of Diamond-like Carbon App 20180274100 - Yang; Yang ; et al.	2018-09-27
Deposition Or Treatment Of Diamond-like Carbon In A Plasma Reactor App 20180274089 - Yang; Yang ; et al.	2018-09-27
Plasma Reactor With Electron Beam Of Secondary Electrons App 20180277340 - Yang; Yang ; et al.	2018-09-27
Electron beam plasma source with reduced metal contamination Grant 9,721,760 - Dorf , et al. August 1, 2	2017-08-01
Electron Beam Plasma Source With Reduced Metal Contamination App 20140338835 - Dorf; Leonid ; et al.	2014-11-20
Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltage Grant 7,700,465 - Collins , et al. April 20, 2	2010-04-20
Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements Grant 7,430,984 - Hanawa , et al. October 7, 2	2008-10-07
Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage Grant 7,320,734 - Collins , et al. January 22, 2	2008-01-22
Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage Grant 7,303,982 - Collins , et al. December 4, 2	2007-12-04
Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage Grant 7,291,545 - Collins , et al. November 6, 2	2007-11-06
Plasma immersion ion implantation apparatus including a capacitively coupled plasma source having low dissociation and low minimum plasma voltage App 20070119546 - Collins; Kenneth S. ; et al.	2007-05-31
Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage Grant 7,137,354 - Collins , et al. November 21, 2	2006-11-21
Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage Grant 7,037,813 - Collins , et al. May 2, 2	2006-05-02
Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage App 20060073683 - Collins; Kenneth S. ; et al.	2006-04-06
Plasma immersion ion implantation system including an inductively coupled plasma source having low dissociation and low minimum plasma voltage App 20050051271 - Collins, Kenneth S. ; et al.	2005-03-10
Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage App 20050051272 - Collins, Kenneth S. ; et al.	2005-03-10
Plasma immersion ion implantation system including a capacitively coupled plasma source having low dissociation and low minimum plasma voltage App 20040149217 - Collins, Kenneth S. ; et al.	2004-08-05
Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage App 20040149218 - Collins, Kenneth S. ; et al.	2004-08-05
Plasma immersion ion implantation apparatus including a capacitively coupled plasma source having low dissociation and low minimum plasma voltage App 20040112542 - Collins, Kenneth S. ; et al.	2004-06-17
Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage App 20040107906 - Collins, Kenneth S. ; et al.	2004-06-10
Plasma immersion ion implantation apparatus including an inductively coupled plasma source having low dissociation and low minimum plasma voltage App 20040107908 - Collins, Kenneth S. ; et al.	2004-06-10
Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltage App 20040107909 - Collins, Kenneth S. ; et al.	2004-06-10
Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage App 20040107907 - Collins, Kenneth S. ; et al.	2004-06-10
Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling App 20040027781 - Hanawa, Hiroji ; et al.	2004-02-12
Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements App 20030047449 - Hanawa, Hiroji ; et al.	2003-03-13

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