| Patent | Date |
|---|
Vertical Semiconductor Device With Enhanced Contact Structure And Associated Methods
App 20220285498 - STEPHENSON; ROBERT JOHN ; et al. | 2022-09-08 |
Radio Frequency (rf) Semiconductor Devices Including A Ground Plane Layer Having A Superlattice
App 20220285152 - TAKEUCHI; HIDEKI ; et al. | 2022-09-08 |
Methods For Making Radio Frequency (rf) Semiconductor Devices Including A Ground Plane Layer Having A Superlattice
App 20220285153 - Takeuchi; Hideki ; et al. | 2022-09-08 |
Method for making superlattice structures with reduced defect densities
Grant 11,430,869 - Weeks , et al. August 30, 2 | 2022-08-30 |
Vertical semiconductor device with enhanced contact structure and associated methods
Grant 11,387,325 - Stephenson , et al. July 12, 2 | 2022-07-12 |
Method For Making Semiconductor Device Including Superlattice With Oxygen And Carbon Monolayers
App 20220005927 - WEEKS; KEITH DORAN ; et al. | 2022-01-06 |
Method For Making A Semiconductor Device Using Superlattices With Different Non-semiconductor Thermal Stabilities
App 20220005706 - WEEKS; KEITH DORAN ; et al. | 2022-01-06 |
Semiconductor Device Including Superlattice With Oxygen And Carbon Monolayers
App 20220005926 - WEEKS; KEITH DORAN ; et al. | 2022-01-06 |
Semiconductor devices including hyper-abrupt junction region including spaced-apart superlattices and related methods
Grant 11,183,565 - Burton , et al. November 23, 2 | 2021-11-23 |
Vertical Semiconductor Device With Enhanced Contact Structure And Associated Methods
App 20210074814 - STEPHENSON; ROBERT JOHN ; et al. | 2021-03-11 |
Method for making a varactor with a hyper-abrupt junction region including spaced-apart superlattices
Grant 10,937,888 - Burton , et al. March 2, 2 | 2021-03-02 |
Method for making semiconductor devices with hyper-abrupt junction region including spaced-apart superlattices
Grant 10,937,868 - Burton , et al. March 2, 2 | 2021-03-02 |
Method For Making A Semiconductor Device Having A Hyper-abrupt Junction Region Including A Superlattice
App 20210020748 - Burton; Richard ; et al. | 2021-01-21 |
Method For Making Semiconductor Devices With Hyper-abrupt Junction Region Including Spaced-apart Superlattices
App 20210020750 - BURTON; RICHARD ; et al. | 2021-01-21 |
Semiconductor Devices Including Hyper-abrupt Junction Region Including Spaced-apart Superlattices And Related Methods
App 20210020749 - Burton; Richard ; et al. | 2021-01-21 |
Method For Making A Varactor With A Hyper-abrupt Junction Region Including Spaced-apart Superlattices
App 20210020759 - BURTON; RICHARD ; et al. | 2021-01-21 |
Method For Making Superlattice Structures With Reduced Defect Densities
App 20200411645 - WEEKS; KEITH DORAN ; et al. | 2020-12-31 |
Method for making a semiconductor device having a hyper-abrupt junction region including a superlattice
Grant 10,879,357 - Burton , et al. December 29, 2 | 2020-12-29 |
Method for making a semiconductor device including enhanced contact structures having a superlattice
Grant 10,879,356 - Stephenson , et al. December 29, 2 | 2020-12-29 |
Method for making a varactor with hyper-abrupt junction region including a superlattice
Grant 10,868,120 - Burton , et al. December 15, 2 | 2020-12-15 |
Method for making a FINFET including source and drain dopant diffusion blocking superlattices to reduce contact resistance
Grant 10,854,717 - Takeuchi , et al. December 1, 2 | 2020-12-01 |
Semiconductor device including body contact dopant diffusion blocking superlattice having reduced contact resistance
Grant 10,847,618 - Takeuchi , et al. November 24, 2 | 2020-11-24 |
Varactor with hyper-abrupt junction region including a superlattice
Grant 10,840,388 - Burton , et al. November 17, 2 | 2020-11-17 |
Method for making a FINFET having reduced contact resistance
Grant 10,840,337 - Takeuchi , et al. November 17, 2 | 2020-11-17 |
Method for making semiconductor device including body contact dopant diffusion blocking superlattice to reduce contact resistance
Grant 10,840,335 - Takeuchi , et al. November 17, 2 | 2020-11-17 |
Semiconductor device with metal-semiconductor contacts including oxygen insertion layer to constrain dopants and related methods
Grant 10,840,336 - Connelly , et al. November 17, 2 | 2020-11-17 |
Varactor with hyper-abrupt junction region including spaced-apart superlattices
Grant 10,825,902 - Burton , et al. November 3, 2 | 2020-11-03 |
Semiconductor devices including hyper-abrupt junction region including a superlattice
Grant 10,825,901 - Burton , et al. November 3, 2 | 2020-11-03 |
Method for making semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance
Grant 10,818,755 - Takeuchi , et al. October 27, 2 | 2020-10-27 |
Method for making superlattice structures with reduced defect densities
Grant 10,811,498 - Weeks , et al. October 20, 2 | 2020-10-20 |
Semiconductor device including enhanced contact structures having a superlattice
Grant 10,777,451 - Stephenson , et al. Sept | 2020-09-15 |
Method for making a semiconductor device including non-monocrystalline stringer adjacent a superlattice-sti interface
Grant 10,741,436 - Stephenson , et al. A | 2020-08-11 |
Method for making a semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice
Grant 10,727,049 - Weeks , et al. | 2020-07-28 |
Semiconductor Device Including Body Contact Dopant Diffusion Blocking Superlattice Having Reduced Contact Resistance
App 20200161430 - TAKEUCHI; HIDEKI ; et al. | 2020-05-21 |
Method For Making Semiconductor Device Including Source/drain Dopant Diffusion Blocking Superlattices To Reduce Contact Resistan
App 20200161429 - TAKEUCHI; HIDEKI ; et al. | 2020-05-21 |
Semiconductor Device With Metal-semiconductor Contacts Including Oxygen Insertion Layer To Constrain Dopants And Related Methods
App 20200161426 - CONNELLY; DANIEL ; et al. | 2020-05-21 |
Method For Making A Finfet Having Reduced Contact Resistance
App 20200161427 - TAKEUCHI; HIDEKI ; et al. | 2020-05-21 |
Method For Making A Finfet Including Source And Drain Dopant Diffusion Blocking Superlattices To Reduce Contact Resistance
App 20200161428 - TAKEUCHI; HIDEKI ; et al. | 2020-05-21 |
Method For Making Semiconductor Device Including Body Contact Dopant Diffusion Blocking Superlattice To Reduce Contact Resistanc
App 20200161425 - TAKEUCHI; HIDEKI ; et al. | 2020-05-21 |
Method For Making A Semiconductor Device Including A Superlattice Having Nitrogen Diffused Therein
App 20200135489 - WEEKS; KEITH DORAN ; et al. | 2020-04-30 |
Method for making a semiconductor device having reduced contact resistance
Grant 10,593,761 - Takeuchi , et al. | 2020-03-17 |
Method For Making Superlattice Structures With Reduced Defect Densities
App 20200075731 - WEEKS; KEITH DORAN ; et al. | 2020-03-05 |
Semiconductor Device Including Superlattice Structures With Reduced Defect Densities
App 20200075327 - WEEKS; Keith Doran ; et al. | 2020-03-05 |
Semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance
Grant 10,580,866 - Takeuchi , et al. | 2020-03-03 |
FINFET including source and drain regions with dopant diffusion blocking superlattice layers to reduce contact resistance
Grant 10,580,867 - Takeuchi , et al. | 2020-03-03 |
Semiconductor device including superlattice structures with reduced defect densities
Grant 10,566,191 - Weeks , et al. Feb | 2020-02-18 |
Semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice
Grant 10,468,245 - Weeks , et al. No | 2019-11-05 |
Semiconductor device including resonant tunneling diode structure having a superlattice
Grant 10,453,945 - Mears , et al. Oc | 2019-10-22 |
Method For Making A Semiconductor Device Including Enhanced Contact Structures Having A Superlattice
App 20190279897 - Stephenson; Robert John ; et al. | 2019-09-12 |
Semiconductor Device Including Compound Semiconductor Materials And An Impurity And Point Defect Blocking Superlattice
App 20190279868 - Weeks; Keith Doran ; et al. | 2019-09-12 |
Semiconductor Device Including Enhanced Contact Structures Having A Superlattice
App 20190280090 - STEPHENSON; ROBERT JOHN ; et al. | 2019-09-12 |
Method For Making A Semiconductor Device Including Compound Semiconductor Materials And An Impurity And Point Defect Blocking Su
App 20190279869 - WEEKS; KEITH DORAN ; et al. | 2019-09-12 |
Method for making CMOS image sensor including superlattice to enhance infrared light absorption
Grant 10,361,243 - Mears , et al. | 2019-07-23 |
Method For Making Cmos Image Sensor Including Superlattice To Enhance Infrared Light Absorption
App 20190189677 - MEARS; ROBERT J. ; et al. | 2019-06-20 |
CMOS image sensor including superlattice to enhance infrared light absorption
Grant 10,276,625 - Mears , et al. | 2019-04-30 |
Method for making a semiconductor device including a resonant tunneling diode structure having a superlattice
Grant 10,249,745 - Mears , et al. | 2019-04-02 |
Semiconductor Device Including Non-monocrystalline Stringer Adjacent A Superlattice-sti Interface
App 20190058059 - STEPHENSON; Robert John ; et al. | 2019-02-21 |
Method For Making A Semiconductor Device Including Non-monocrystalline Stringer Adjacent A Superlattice-sti Interface
App 20190057896 - STEPHENSON; Robert John ; et al. | 2019-02-21 |
CMOS image sensor including superlattice to enhance infrared light absorption
Grant 10211251 - | 2019-02-19 |
Semiconductor device including a resonant tunneling diode structure with electron mean free path control layers
Grant 10,170,603 - Mears , et al. J | 2019-01-01 |
Method for making a semiconductor device including a resonant tunneling diode with electron mean free path control layers
Grant 10,170,604 - Mears , et al. J | 2019-01-01 |
Semiconductor devices with enhanced deterministic doping and related methods
Grant 10,170,560 - Mears J | 2019-01-01 |
Method of making a semiconductor device with a buried insulating layer formed by annealing a superlattice
Grant 10,109,479 - Mears , et al. October 23, 2 | 2018-10-23 |
Semiconductor device including a superlattice and replacement metal gate structure and related methods
Grant 10,084,045 - Mears , et al. September 25, 2 | 2018-09-25 |
Semiconductor devices with superlattice and punch-through stop (PTS) layers at different depths and related methods
Grant 9,941,359 - Mears , et al. April 10, 2 | 2018-04-10 |
Semiconductor devices with superlattice layers providing halo implant peak confinement and related methods
Grant 9,899,479 - Mears , et al. February 20, 2 | 2018-02-20 |
Method For Making A Semiconductor Device Including A Resonant Tunneling Diode With Electron Mean Free Path Control Layers
App 20180040714 - MEARS; ROBERT J. ; et al. | 2018-02-08 |
Semiconductor Device Including Resonant Tunneling Diode Structure Having A Superlattice
App 20180040724 - MEARS; ROBERT J. ; et al. | 2018-02-08 |
Method For Making A Semiconductor Device Including A Resonant Tunneling Diode Structure Having A Superlattice
App 20180040725 - MEARS; ROBERT J. ; et al. | 2018-02-08 |
Semiconductor Device Including A Resonant Tunneling Diode Structure With Electron Mean Free Path Control Layers
App 20180040743 - MEARS; ROBERT J. ; et al. | 2018-02-08 |
Semiconductor Device Including A Superlattice And Replacement Metal Gate Structure And Related Methods
App 20170301757 - MEARS; ROBERT J. ; et al. | 2017-10-19 |
Semiconductor Devices With Enhanced Deterministic Doping And Related Methods
App 20170294514 - MEARS; ROBERT J. | 2017-10-12 |
Method for making enhanced semiconductor structures in single wafer processing chamber with desired uniformity control
Grant 9,721,790 - Mears , et al. August 1, 2 | 2017-08-01 |
Semiconductor device including a superlattice and replacement metal gate structure and related methods
Grant 9,722,046 - Mears , et al. August 1, 2 | 2017-08-01 |
Semiconductor devices with enhanced deterministic doping and related methods
Grant 9,716,147 - Mears July 25, 2 | 2017-07-25 |
Method For Making Enhanced Semiconductor Structures In Single Wafer Processing Chamber With Desired Uniformity Control
App 20160358773 - Mears; Robert J. ; et al. | 2016-12-08 |
Semiconductor Devices With Superlattice And Punch-through Stop (pts) Layers At Different Depths And Related Methods
App 20160336406 - Mears; Robert J. ; et al. | 2016-11-17 |
Semiconductor Devices With Superlattice Layers Providing Halo Implant Peak Confinement And Related Methods
App 20160336407 - Mears; Robert J. ; et al. | 2016-11-17 |
Semiconductor Device Including A Superlattice And Replacement Metal Gate Structure And Related Methods
App 20160149023 - Mears; Robert J. ; et al. | 2016-05-26 |
Semiconductor Devices With Enhanced Deterministic Doping And Related Methods
App 20150357414 - MEARS; Robert J. | 2015-12-10 |
Multiple-wavelength opto-electronic device including a superlattice
Grant 8,389,974 - Mears , et al. March 5, 2 | 2013-03-05 |
Multiple-wavelength Opto-electronic Device Including A Superlattice
App 20110193063 - Mears; Robert J. ; et al. | 2011-08-11 |
Multiple-wavelength opto-electronic device including a superlattice
Grant 7,880,161 - Mears , et al. February 1, 2 | 2011-02-01 |
Method for making a multiple-wavelength opto-electronic device including a superlattice
Grant 7,863,066 - Mears , et al. January 4, 2 | 2011-01-04 |
Electronic Device Including An Electrically Polled Superlattice And Related Methods
App 20100270535 - Halilov; Samed ; et al. | 2010-10-28 |
Method for making a semiconductor device including shallow trench isolation (STI) regions with maskless superlattice deposition following STI formation and related structures
Grant 7,812,339 - Mears , et al. October 12, 2 | 2010-10-12 |
Semiconductor device comprising a lattice matching layer
Grant 7,718,996 - Dukovski , et al. May 18, 2 | 2010-05-18 |
Method for making a semiconductor device comprising a lattice matching layer
Grant 7,700,447 - Dukovski , et al. April 20, 2 | 2010-04-20 |
Methods of making spintronic devices with constrained spintronic dopant
Grant 7,625,767 - Huang , et al. December 1, 2 | 2009-12-01 |
Semiconductor device including a strained superlattice layer above a stress layer
Grant 7,612,366 - Mears , et al. November 3, 2 | 2009-11-03 |
Semiconductor device including a strained superlattice and overlying stress layer and related methods
Grant 7,598,515 - Mears , et al. October 6, 2 | 2009-10-06 |
Semiconductor device including a strained superlattice between at least one pair of spaced apart stress regions
Grant 7,531,828 - Mears , et al. May 12, 2 | 2009-05-12 |
Method for making an electronic device including a poled superlattice having a net electrical dipole moment
Grant 7,517,702 - Halilov , et al. April 14, 2 | 2009-04-14 |
Method for making a semiconductor device comprising a superlattice dielectric interface layer
Grant 7,446,002 - Mears , et al. November 4, 2 | 2008-11-04 |
Electronic device comprising active optical devices with an energy band engineered superlattice
Grant 7,446,334 - Mears , et al. November 4, 2 | 2008-11-04 |
Method For Making A Semiconductor Device Including Shallow Trench Isolation (sti) Regions With Maskless Superlattice Deposition Following Sti Formation And Related Structures
App 20080258134 - Mears; Robert J. ; et al. | 2008-10-23 |
Semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel
Grant 7,435,988 - Mears , et al. October 14, 2 | 2008-10-14 |
Integrated circuit comprising an active optical device having an energy band engineered superlattice
Grant 7,432,524 - Mears , et al. October 7, 2 | 2008-10-07 |
Method For Making A Multiple-wavelength Opto-electronic Device Including A Superlattice
App 20080197341 - Mears; Robert J. ; et al. | 2008-08-21 |
Multiple-wavelength Opto-electronic Device Including A Superlattice
App 20080197340 - Mears; Robert J. ; et al. | 2008-08-21 |
Spintronic Devices With Constrained Spintronic Dopant
App 20080012004 - Huang; Xiangyang ; et al. | 2008-01-17 |
Semiconductor device including MOSFET having band-engineered superlattice
Grant 7,303,948 - Mears , et al. December 4, 2 | 2007-12-04 |
Methods Of Making Spintronic Devices With Constrained Spintronic Dopant
App 20070238274 - HUANG; Xiangyang ; et al. | 2007-10-11 |
Integrated circuit comprising a waveguide having an energy band engineered superlattice
Grant 7,279,699 - Mears , et al. October 9, 2 | 2007-10-09 |
Method for making a semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel
Grant 7,265,002 - Mears , et al. September 4, 2 | 2007-09-04 |
Method For Making A Semiconductor Device Comprising A Lattice Matching Layer
App 20070197006 - Dukovski; Ilija ; et al. | 2007-08-23 |
Semiconductor Device Comprising A Lattice Matching Layer
App 20070194298 - Dukovski; Ilija ; et al. | 2007-08-23 |
Electronic Device Including A Selectively Polable Superlattice
App 20070187667 - Halilov; Samed ; et al. | 2007-08-16 |
Method For Making An Electronic Device Including A Selectively Polable Superlattice
App 20070166928 - Halilov; Samed ; et al. | 2007-07-19 |
Electronic Device Including A Poled Superlattice Having A Net Electrical Dipole Moment
App 20070158640 - Halilov; Samed ; et al. | 2007-07-12 |
Method For Making An Electronic Device Including A Poled Superlattice Having A Net Electrical Dipole Moment
App 20070161138 - Halilov; Samed ; et al. | 2007-07-12 |
Method for making a semiconductor device including a superlattice with regions defining a semiconductor junction
Grant 7,229,902 - Mears , et al. June 12, 2 | 2007-06-12 |
Semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction
Grant 7,227,174 - Mears , et al. June 5, 2 | 2007-06-05 |
Method for Making Semiconductor Device Including a Strained Superlattice and Overlying Stress Layer and Related Methods
App 20070020860 - Mears; Robert J. ; et al. | 2007-01-25 |
Method for Making a Semiconductor Device Including a Channel with a Non-Semiconductor Layer Monolayer
App 20070020833 - Mears; Robert J. ; et al. | 2007-01-25 |
Semiconductor Device Including a Strained Superlattice Between at Least One Pair of Spaced Apart Stress Regions
App 20070012909 - Mears; Robert J. ; et al. | 2007-01-18 |
Semiconductor Device Including a Strained Superlattice and Overlying Stress Layer and Related Methods
App 20070012912 - Mears; Robert J. ; et al. | 2007-01-18 |
Semiconductor Device Including a Channel with a Non-Semiconductor Layer Monolayer
App 20070012910 - Mears; Robert J. ; et al. | 2007-01-18 |
Method for Making a Semiconductor Device Including a Strained Superlattice Between at Least One Pair of Spaced Apart Stress Regions
App 20070015344 - Mears; Robert J. ; et al. | 2007-01-18 |
Method for Making a Semiconductor Device Including a Strained Superlattice Layer Above a Stress Layer
App 20070010040 - Mears; Robert J. ; et al. | 2007-01-11 |
Semiconductor Device Including a Strained Superlattice Layer Above a Stress Layer
App 20070007508 - Mears; Robert J. ; et al. | 2007-01-11 |
Method for making an integrated circuit comprising a waveguide having an energy band engineered superlattice
Grant 7,109,052 - Mears , et al. September 19, 2 | 2006-09-19 |
Method for making a semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure
Grant 7,071,119 - Mears , et al. July 4, 2 | 2006-07-04 |
Semiconductor device including a superlattice with regions defining a semiconductor junction
Grant 7,045,813 - Mears , et al. May 16, 2 | 2006-05-16 |
Method for making a semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction
Grant 7,045,377 - Mears , et al. May 16, 2 | 2006-05-16 |
Method for making semiconductor device including band-engineered superlattice
Grant 7,033,437 - Mears , et al. April 25, 2 | 2006-04-25 |
Semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure
Grant 7,034,329 - Mears , et al. April 25, 2 | 2006-04-25 |
Optical filter device with aperiodically arranged grating elements
Grant 6,993,222 - Mears , et al. January 31, 2 | 2006-01-31 |
Method for making a semiconductor device comprising a superlattice dielectric interface layer
App 20060019454 - Mears; Robert J. ; et al. | 2006-01-26 |
Semiconductor device comprising a superlattice dielectric interface layer
App 20060011905 - Mears; Robert J. ; et al. | 2006-01-19 |
Semiconductor device including a superlattice having at least one group of substantially undoped layers
App 20050279991 - Mears, Robert J. ; et al. | 2005-12-22 |
Method for making a semiconductor device including a superlattice having at least one group of substantially undoped layers
App 20050282330 - Mears, Robert J. ; et al. | 2005-12-22 |
Semiconductor device including band-engineered superlattice
Grant 6,958,486 - Mears , et al. October 25, 2 | 2005-10-25 |
Semiconductor device including band-engineered superlattice
Grant 6,952,018 - Mears , et al. October 4, 2 | 2005-10-04 |
Semiconductor device including mosfet having band-engineered superlattice
App 20050184286 - Mears, Robert J. ; et al. | 2005-08-25 |
Method for making a semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel
App 20050173696 - Mears, Robert J. ; et al. | 2005-08-11 |
Semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel
App 20050173697 - Mears, Robert J. ; et al. | 2005-08-11 |
Semiconductor device including band-engineered superlattice
Grant 6,927,413 - Mears , et al. August 9, 2 | 2005-08-09 |
Semiconductor device including a superlattice with regions defining a semiconductor junction
App 20050167653 - Mears, Robert J. ; et al. | 2005-08-04 |
Method for making a semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction
App 20050170591 - Mears, Robert J. ; et al. | 2005-08-04 |
Semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction
App 20050167649 - Mears, Robert J. ; et al. | 2005-08-04 |
Method for making a semiconductor device including a superlattice with regions defining a semiconductor junction
App 20050170590 - Mears, Robert J. ; et al. | 2005-08-04 |
Semiconductor device including MOSFET having band-engineered superlattice
Grant 6,897,472 - Mears , et al. May 24, 2 | 2005-05-24 |
Semiconductor device including band-engineered superlattice
Grant 6,891,188 - Mears , et al. May 10, 2 | 2005-05-10 |
Semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure
App 20050087736 - Mears, Robert J. ; et al. | 2005-04-28 |
Method for making a semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure
App 20050087738 - Mears, Robert J. ; et al. | 2005-04-28 |
Method for making semiconductor device including band-engineered superlattice
Grant 6,878,576 - Mears , et al. April 12, 2 | 2005-04-12 |
Method for making an intetgrated circuit comprising a waveguide having an energy band engineered superlattice
App 20050032260 - Mears, Robert J. ; et al. | 2005-02-10 |
Method for making an integrated circuit comprising an active optical device having an energy band engineered superlattice
App 20050032247 - Mears, Robert J. ; et al. | 2005-02-10 |
Integrated circuit comprising an active optical device having an energy band engineered superlattice
App 20050029511 - Mears, Robert J. ; et al. | 2005-02-10 |
Method for making electronic device comprising active optical devices with an energy band engineered superlattice
App 20050029510 - Mears, Robert J. ; et al. | 2005-02-10 |
Integrated circuit comprising a waveguide having an energy band engineered superlattice
App 20050031247 - Mears, Robert J. ; et al. | 2005-02-10 |
Electronic device comprising active optical devices with an energy band engineered superlattice
App 20050029509 - Mears, Robert J. ; et al. | 2005-02-10 |
Semiconductor Device Including Band-engineered Superlattice
App 20050017235 - Mears, Robert J. ; et al. | 2005-01-27 |
Semiconductor device including band-engineered superlattice
App 20040262596 - Mears, Robert J. ; et al. | 2004-12-30 |
Semiconductor structures having improved conductivity effective mass and methods for fabricating same
App 20040262594 - Mears, Robert J. ; et al. | 2004-12-30 |
Semiconductor device including band-engineered superlattice
App 20040262628 - Mears, Robert J. ; et al. | 2004-12-30 |
Semiconductor device including band-engineered superlattice
App 20040262595 - Mears, Robert J. ; et al. | 2004-12-30 |
Method for making semiconductor device including band-engineered superlattice
App 20040261695 - Mears, Robert J. ; et al. | 2004-12-30 |
Semiconductor Device Including Mosfet Having Band-engineered Superlattice
App 20040262597 - Mears, Robert J. ; et al. | 2004-12-30 |
Method For Making Semiconductor Device Including Band-engineered Superlattice
App 20040266046 - Mears, Robert J. ; et al. | 2004-12-30 |
Methods Of Fabricating Semiconductor Structures Having Improved Conductivity Effective Mass
App 20040266116 - Mears, Robert J. ; et al. | 2004-12-30 |
Method For Making Semiconductor Device Including Band-engineered Superlattice
App 20040266045 - Mears, Robert J. ; et al. | 2004-12-30 |
Method for making semiconductor device including band-engineered superlattice
Grant 6,833,294 - Mears , et al. December 21, 2 | 2004-12-21 |
Method for making semiconductor device including band-engineered superlattice
Grant 6,830,964 - Mears , et al. December 14, 2 | 2004-12-14 |
Optical filter device with aperiodically arranged grating elements
App 20040208445 - Mears, Robert J. ; et al. | 2004-10-21 |
Fabry-Perot laser with wavelength control
Grant 6,741,624 - Mears , et al. May 25, 2 | 2004-05-25 |
Farby-perot laser with wavelength control
App 20020196826 - Mears, Robert J. ; et al. | 2002-12-26 |
Fibre-optic lasers and amplifiers
Grant 4,955,025 - Mears , et al. September 4, 1 | 1990-09-04 |
Bistable optical device comprising a lightly doped optical fibre
Grant 4,910,737 - Payne , et al. March 20, 1 | 1990-03-20 |
Fabrication of optical fibers
Grant 4,787,927 - Mears , et al. November 29, 1 | 1988-11-29 |
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