Patent | Date |
---|
Dual Self-aligned Gate Endcap (sage) Architectures App 20220077302 - SUBRAMANIAN; Sairam ;   et al. | 2022-03-10 |
Unidirectional Self-aligned Gate Endcap (sage) Architectures With Gate-orthogonal Walls App 20220077145 - HAFEZ; Walid M. ;   et al. | 2022-03-10 |
Unidirectional self-aligned gate endcap (SAGE) architectures with gate-orthogonal walls Grant 11,217,582 - Hafez , et al. January 4, 2 | 2022-01-04 |
Dual self-aligned gate endcap (SAGE) architectures Grant 11,205,708 - Subramanian , et al. December 21, 2 | 2021-12-21 |
Fin Trim Plug Structures For Imparting Channel Stress App 20200220016 - GULER; Leonard ;   et al. | 2020-07-09 |
Cost Effective Precision Resistor Using Blocked Depop Method In Self-aligned Gate Endcap (sage) Architecture App 20200105746 - OLAC-VAW; Roman ;   et al. | 2020-04-02 |
Self-aligned build-up of topographic features Grant 10,541,143 - Guler , et al. Ja | 2020-01-21 |
Dual Self-aligned Gate Endcap (sage) Architectures App 20190305112 - SUBRAMANIAN; Sairam ;   et al. | 2019-10-03 |
Unidirectional Self-aligned Gate Endcap (sage) Architectures With Gate-orthogonal Walls App 20190304971 - HAFEZ; Walid M. ;   et al. | 2019-10-03 |
Self-aligned Build-up Of Topographic Features App 20190096685 - Guler; Leonard P. ;   et al. | 2019-03-28 |
Transistor device with gate control layer undercutting the gate dielectric Grant 10,109,628 - Murthy , et al. October 23, 2 | 2018-10-23 |
Technique for filling high aspect ratio, narrow structures with multiple metal layers and associated configurations Grant 9,972,541 - Steigerwald , et al. May 15, 2 | 2018-05-15 |
Technique For Filling High Aspect Ratio, Narrow Structures With Multiple Metal Layers And Associated Configurations App 20170213768 - STEIGERWALD; Joseph M. ;   et al. | 2017-07-27 |
Metal-insulator-metal (MIM) capacitor with insulator stack having a plurality of metal oxide layers Grant 9,691,839 - Lindert , et al. June 27, 2 | 2017-06-27 |
Formation Of Dram Capacitor Among Metal Interconnect App 20170148868 - LINDERT; NICK ;   et al. | 2017-05-25 |
Semiconductor structure having a capacitor and metal wiring integrated in a same dielectric layer Grant 9,577,030 - Lindert February 21, 2 | 2017-02-21 |
Formation of DRAM capacitor among metal interconnect Grant 9,565,766 - Lindert , et al. February 7, 2 | 2017-02-07 |
Techniques For Improving Gate Control Over Transistor Channel By Increasing Effective Gate Length App 20160240534 - MURTHY; ANAND S. ;   et al. | 2016-08-18 |
Embedded memory device having MIM capacitor formed in excavated structure Grant 9,224,794 - Keating , et al. December 29, 2 | 2015-12-29 |
Semiconductor Structure Having A Capacitor And Metal Wiring Integrated In A Same Dielectric Layer App 20150255533 - Lindert; Nick | 2015-09-10 |
Rectangular capacitors for dynamic random access (DRAM) and dual-pass lithography methods to form the same Grant 9,076,758 - Lindert July 7, 2 | 2015-07-07 |
Penetrating implant for forming a semiconductor device Grant 8,741,720 - Curello , et al. June 3, 2 | 2014-06-03 |
Rectangular Capacitors For Dynamic Random Access Memory (dram) And Dual-pass Lithography Methods To Form The Same App 20140057408 - Lindert; Nick | 2014-02-27 |
Atomic Layer Deposition (ald) Of Taalc For Capacitor Integration App 20140001598 - Lindert; Nick ;   et al. | 2014-01-02 |
Fully Encapsulated Conductive Lines App 20130292797 - Lindert; Nick ;   et al. | 2013-11-07 |
Formation Of Dram Capacitor Among Metal Interconnect App 20130271938 - Lindert; Nick ;   et al. | 2013-10-17 |
Metal-insulator-metal (mim) Capacitor With Insulator Stack Having A Plurality Of Metal Oxide Layers App 20130270676 - Lindert; Nick ;   et al. | 2013-10-17 |
Method Of Patterning A Metal On A Vertical Sidewall Of An Excavated Feature, Method Of Forming An Embedded Mim Capacitor Using Same, And Embedded Memory Device Produced Thereby App 20130234290 - Keating; Steven ;   et al. | 2013-09-12 |
Penetrating Implant For Forming A Semiconductor Device App 20130224926 - Curello; Giuseppe ;   et al. | 2013-08-29 |
6F2 DRAM cell Grant 8,519,462 - Wang , et al. August 27, 2 | 2013-08-27 |
Capacitor with recessed plate portion for dynamic random access memory (DRAM) and method to form the same Grant 8,502,293 - Lindert August 6, 2 | 2013-08-06 |
Methods to form memory devices having a capacitor with a recessed electrode Grant 8,441,097 - Steigerwald , et al. May 14, 2 | 2013-05-14 |
Embedded memory device having MIM capacitor formed in excavated structure Grant 8,441,057 - Keating , et al. May 14, 2 | 2013-05-14 |
Penetrating implant for forming a semiconductor device Grant 8,426,927 - Curello , et al. April 23, 2 | 2013-04-23 |
Metal gate transistors with raised source and drain regions formed on heavily doped substrate Grant 8,344,452 - Lindert , et al. January 1, 2 | 2013-01-01 |
6F2 DRAM Cell App 20120326218 - Wang; Yih ;   et al. | 2012-12-27 |
Semiconductor Structure Having An Integrated Double-wall Capacitor For Embedded Dynamic Random Access Memory (edram) And Method To Form The Same App 20120235274 - Doyle; Brian S. ;   et al. | 2012-09-20 |
Semiconductor Structure Having A Capacitor And Metal Wiring Integrated In A Same Dielectric Layer App 20120223413 - Lindert; Nick | 2012-09-06 |
Capacitor With Recessed Plate Portion For Dynamic Random Access Memory (dram) And Method To Form The Same App 20120161280 - Lindert; Nick | 2012-06-28 |
Rectangular Capacitors For Dynamic Random Access Memory (dram) And Dual-pass Lithography Methods To Form The Same App 20120161215 - Lindert; Nick | 2012-06-28 |
Recessed Channel Array Transistor (rcat) In Replacement Metal Gate (rmg) Logic Flow App 20110260244 - Doyle; Brian S. ;   et al. | 2011-10-27 |
Recessed channel array transistor (RCAT) in replacement metal gate (RMG) logic flow Grant 8,030,197 - Doyle , et al. October 4, 2 | 2011-10-04 |
Penetrating Implant For Forming A Semiconductor Device App 20110215422 - Curello; Giuseppe ;   et al. | 2011-09-08 |
Common plate capacitor array connections, and processes of making same Grant 7,981,756 - Lindert , et al. July 19, 2 | 2011-07-19 |
Methods To Form Memory Devices Having A Capacitor With A Recessed Electrode App 20110147888 - Steigerwald; Joseph M. ;   et al. | 2011-06-23 |
Method Of Patterning A Metal On A Vertical Sidewall Of An Excavated Feature, Method Of Forming An Embedded Mim Capacitor Using Same, And Embedded Memory Device Produced Thereby App 20110134583 - Keating; Steve J. ;   et al. | 2011-06-09 |
Forming abrupt source drain metal gate transistors Grant 7,951,673 - Lindert , et al. May 31, 2 | 2011-05-31 |
Penetrating implant for forming a semiconductor device Grant 7,943,468 - Curello , et al. May 17, 2 | 2011-05-17 |
Method of patterning a metal on a vertical sidewall of an excavated feature, method of forming an embedded MIM capacitor using same, and embedded memory device produced thereby Grant 7,927,959 - Keating , et al. April 19, 2 | 2011-04-19 |
Recessed Channel Array Transistor (rcat) In Replacement Metal Gate (rmg) Logic Flow App 20100276757 - Doyle; Brian S. ;   et al. | 2010-11-04 |
Bulk non-planar transistor having strained enhanced mobility and methods of fabrication Grant 7,781,771 - Lindert , et al. August 24, 2 | 2010-08-24 |
Common plate capacitor array connections, and processes of making same App 20100155887 - Lindert; Nick ;   et al. | 2010-06-24 |
Forming Abrupt Source Drain Metal Gate Transistors App 20100151669 - Lindert; Nick ;   et al. | 2010-06-17 |
Method of forming abrupt source drain metal gate transistors Grant 7,704,833 - Lindert , et al. April 27, 2 | 2010-04-27 |
Method of patterning a metal on a vertical sidewall of an excavated feature, method of forming an embedded MIM capacitor using same, and embedded memory device produced thereby App 20100079924 - Keating; Steven J. ;   et al. | 2010-04-01 |
Plasma implantated impurities in junction region recesses Grant 7,671,358 - Lindert , et al. March 2, 2 | 2010-03-02 |
Penetrating Implant For Forming A Semiconductor Device App 20090242998 - Curello; Giuseppe ;   et al. | 2009-10-01 |
Multi-gate Transistor With Strained Body App 20090001415 - Lindert; Nick ;   et al. | 2009-01-01 |
Fabricating strained channel epitaxial source/drain transistors Grant 7,427,775 - Murthy , et al. September 23, 2 | 2008-09-23 |
Metal gate transistors with epitaxial source and drain regions App 20080142840 - Lindert; Nick ;   et al. | 2008-06-19 |
Bulk non-planar transistor having strained enhanced mobility and methods of fabrication App 20080142841 - Lindert; Nick ;   et al. | 2008-06-19 |
Metal gate transistors with epitaxial source and drain regions Grant 7,332,439 - Lindert , et al. February 19, 2 | 2008-02-19 |
Bulk non-planar transistor having strained enhanced mobility and methods of fabrication Grant 7,326,634 - Lindert , et al. February 5, 2 | 2008-02-05 |
Plasma implantated impurities in junction region recesses App 20080001170 - Lindert; Nick ;   et al. | 2008-01-03 |
Plasma implantation of impurities in junction region recesses Grant 7,314,804 - Lindert , et al. January 1, 2 | 2008-01-01 |
Trench isolation structure having an expanded portion thereof App 20070224775 - Lindert; Nick | 2007-09-27 |
Fabricating strained channel epitaxial source/drain transistors App 20070194391 - Murthy; Anand ;   et al. | 2007-08-23 |
Method of fabricating a MOSFET transistor having an anti-halo for modifying narrow width device performance App 20070145495 - Curello; Giuseppe ;   et al. | 2007-06-28 |
Fabricating strained channel epitaxial source/drain transistors Grant 7,226,842 - Murthy , et al. June 5, 2 | 2007-06-05 |
Bulk non-planar transistor having strained enhanced mobility and methods of fabrication Grant 7,154,118 - Lindert , et al. December 26, 2 | 2006-12-26 |
Epitaxially deposited source/drain App 20060197164 - Lindert; Nick ;   et al. | 2006-09-07 |
Plasma implantation of impurities in junction region recesses App 20060148220 - Lindert; Nick ;   et al. | 2006-07-06 |
Epitaxially deposited source/drain Grant 7,060,576 - Lindert , et al. June 13, 2 | 2006-06-13 |
Pre-etch implantation damage for the removal of thin film layers Grant 7,045,073 - Hareland , et al. May 16, 2 | 2006-05-16 |
Metal gate transistors with epitaxial source and drain regions App 20060068590 - Lindert; Nick ;   et al. | 2006-03-30 |
Forming abrupt source drain metal gate transistors App 20060046399 - Lindert; Nick ;   et al. | 2006-03-02 |
Bulk non-planar transistor having strained enhanced mobility and methods of fabrication App 20050224800 - Lindert, Nick ;   et al. | 2005-10-13 |
Bulk non-planar transistor having strained enhanced mobility and methods of fabrication App 20050218438 - Lindert, Nick ;   et al. | 2005-10-06 |
Controlled faceting of source/drain regions Grant 6,946,350 - Lindert , et al. September 20, 2 | 2005-09-20 |
Creating shallow junction transistors App 20050191834 - Hwang, Jack ;   et al. | 2005-09-01 |
Creating shallow junction transistors Grant 6,936,518 - Hwang , et al. August 30, 2 | 2005-08-30 |
Fabricating strained channel epitaxial source/drain transistors App 20050179066 - Murthy, Anand ;   et al. | 2005-08-18 |
Creating Shallow Junction Transistors App 20050158957 - Hwang, Jack ;   et al. | 2005-07-21 |
Controlled faceting of source/drain regions App 20050142768 - Lindert, Nick ;   et al. | 2005-06-30 |
Epitaxially deposited source/drain App 20050087801 - Lindert, Nick ;   et al. | 2005-04-28 |
Ultra-thin gate dielectrics Grant 6,808,993 - Finnie , et al. October 26, 2 | 2004-10-26 |
Method for making a semiconductor device having an ultra-thin high-k gate dielectric Grant 6,787,440 - Parker , et al. September 7, 2 | 2004-09-07 |
Ultra-thin gate dielectrics App 20040132316 - Finnie, Christine M. ;   et al. | 2004-07-08 |
Pre-etch implantation damage for the removal of thin film layers App 20040118805 - Hareland, Scott A. ;   et al. | 2004-06-24 |
Method for making a semiconductor device having an ultra-thin high-k gate dielectric App 20040110361 - Parker, Christopher G. ;   et al. | 2004-06-10 |
Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture Grant 6,413,802 - Hu , et al. July 2, 2 | 2002-07-02 |