Kreps; Scott A.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kreps; Scott A..The latest application filed is for "semiconductor device including non-monocrystalline stringer adjacent a superlattice-sti interface".

Company Profile

3.27.37

Kreps; Scott A. - Indian Harbour Beach FL
Kreps; Scott A. - Southborough MA
Kreps; Scott A. - Waltham MA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for making a semiconductor device including non-monocrystalline stringer adjacent a superlattice-sti interface Grant 10,741,436 - Stephenson , et al. A	2020-08-11
Method For Making A Semiconductor Device Including Non-monocrystalline Stringer Adjacent A Superlattice-sti Interface App 20190057896 - STEPHENSON; Robert John ; et al.	2019-02-21
Semiconductor Device Including Non-monocrystalline Stringer Adjacent A Superlattice-sti Interface App 20190058059 - STEPHENSON; Robert John ; et al.	2019-02-21
Semiconductor device including a floating gate memory cell with a superlattice channel Grant 7,659,539 - Kreps , et al. February 9, 2	2010-02-09
Semiconductor device including a strained superlattice layer above a stress layer Grant 7,612,366 - Mears , et al. November 3, 2	2009-11-03
Semiconductor device including a strained superlattice and overlying stress layer and related methods Grant 7,598,515 - Mears , et al. October 6, 2	2009-10-06
Semiconductor device having a semiconductor-on-insulator configuration and a superlattice Grant 7,586,116 - Kreps , et al. September 8, 2	2009-09-08
Semiconductor device including a strained superlattice between at least one pair of spaced apart stress regions Grant 7,531,828 - Mears , et al. May 12, 2	2009-05-12
Method for making a semiconductor device comprising a superlattice dielectric interface layer Grant 7,446,002 - Mears , et al. November 4, 2	2008-11-04
Semiconductor device comprising a superlattice channel vertically stepped above source and drain regions Grant 7,436,026 - Kreps October 14, 2	2008-10-14
Semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel Grant 7,435,988 - Mears , et al. October 14, 2	2008-10-14
Semiconductor device including MOSFET having band-engineered superlattice Grant 7,303,948 - Mears , et al. December 4, 2	2007-12-04
Method for making semiconductor device comprising a superlattice with upper portions extending above adjacent upper portions of source and drain regions Grant 7,288,457 - Kreps October 30, 2	2007-10-30
Semiconductor device comprising a superlattice with upper portions extending above adjacent upper portions of source and drain regions Grant 7,279,701 - Kreps October 9, 2	2007-10-09
Method for making a semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel Grant 7,265,002 - Mears , et al. September 4, 2	2007-09-04
FINFET including a superlattice Grant 7,202,494 - Blanchard , et al. April 10, 2	2007-04-10
Method for Making Semiconductor Device Including a Strained Superlattice and Overlying Stress Layer and Related Methods App 20070020860 - Mears; Robert J. ; et al.	2007-01-25
Method for Making a Semiconductor Device Including a Channel with a Non-Semiconductor Layer Monolayer App 20070020833 - Mears; Robert J. ; et al.	2007-01-25
Semiconductor Device Including a Channel with a Non-Semiconductor Layer Monolayer App 20070012910 - Mears; Robert J. ; et al.	2007-01-18
Semiconductor Device Including a Strained Superlattice Between at Least One Pair of Spaced Apart Stress Regions App 20070012909 - Mears; Robert J. ; et al.	2007-01-18
Semiconductor Device Including a Strained Superlattice and Overlying Stress Layer and Related Methods App 20070012912 - Mears; Robert J. ; et al.	2007-01-18
Method for Making a Semiconductor Device Including a Strained Superlattice Between at Least One Pair of Spaced Apart Stress Regions App 20070015344 - Mears; Robert J. ; et al.	2007-01-18
Method for Making a Semiconductor Device Including a Strained Superlattice Layer Above a Stress Layer App 20070010040 - Mears; Robert J. ; et al.	2007-01-11
Method for Making a FINFET Including a Superlattice App 20060292765 - Blanchard; Richard A. ; et al.	2006-12-28
FINFET Including a Superlattice App 20060292889 - Blanchard; Richard A. ; et al.	2006-12-28
Method for making a semiconductor device including band-engineered superlattice using intermediate annealing Grant 7,153,763 - Hytha , et al. December 26, 2	2006-12-26
Method For Making A Semiconductor Device Including A Floating Gate Memory Cell With A Superlattice Channel App 20060263980 - Kreps; Scott A. ; et al.	2006-11-23
Semiconductor Device Having A Semiconductor-on-insulator Configuration And A Superlattice App 20060261327 - Kreps; Scott A. ; et al.	2006-11-23
Semiconductor Device Including A Floating Gate Memory Cell With A Superlattice Channel App 20060243963 - Kreps; Scott A. ; et al.	2006-11-02
Method For Making A Semiconductor Device Having A Semiconductor-on-insulator Configuration And A Superlattice App 20060243964 - Kreps; Scott A. ; et al.	2006-11-02
Method for making a semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure Grant 7,071,119 - Mears , et al. July 4, 2	2006-07-04
Method for making semiconductor device including band-engineered superlattice Grant 7,033,437 - Mears , et al. April 25, 2	2006-04-25
Semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure Grant 7,034,329 - Mears , et al. April 25, 2	2006-04-25
Method for making a semiconductor device comprising a superlattice channel vertically stepped above source and drain regions Grant 7,018,900 - Kreps March 28, 2	2006-03-28
Method for making a semiconductor device comprising a superlattice dielectric interface layer App 20060019454 - Mears; Robert J. ; et al.	2006-01-26
Semiconductor device comprising a superlattice dielectric interface layer App 20060011905 - Mears; Robert J. ; et al.	2006-01-19
Semiconductor device including a superlattice having at least one group of substantially undoped layers App 20050279991 - Mears, Robert J. ; et al.	2005-12-22
Method for making a semiconductor device including a superlattice having at least one group of substantially undoped layers App 20050282330 - Mears, Robert J. ; et al.	2005-12-22
Method for making a semiconductor device including band-engineered superlattice using intermediate annealing App 20050272239 - Hytha, Marek ; et al.	2005-12-08
Semiconductor device including band-engineered superlattice Grant 6,958,486 - Mears , et al. October 25, 2	2005-10-25
Semiconductor device including band-engineered superlattice Grant 6,952,018 - Mears , et al. October 4, 2	2005-10-04
Semiconductor device including mosfet having band-engineered superlattice App 20050184286 - Mears, Robert J. ; et al.	2005-08-25
Semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel App 20050173697 - Mears, Robert J. ; et al.	2005-08-11
Method for making a semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel App 20050173696 - Mears, Robert J. ; et al.	2005-08-11
Semiconductor device including band-engineered superlattice Grant 6,927,413 - Mears , et al. August 9, 2	2005-08-09
Method for making semiconductor device comprising a superlattice with upper portions extending above adjacent upper portions of source and drain regions App 20050118767 - Kreps, Scott A.	2005-06-02
Semiconductor device comprising a superlattice with upper portions extending above adjacent upper portions of source and drain regions App 20050110003 - Kreps, Scott A.	2005-05-26
Semiconductor device including MOSFET having band-engineered superlattice Grant 6,897,472 - Mears , et al. May 24, 2	2005-05-24
Semiconductor device including band-engineered superlattice Grant 6,891,188 - Mears , et al. May 10, 2	2005-05-10
Semiconductor device comprising a superlattice channel vertically stepped above source and drain regions App 20050087737 - Kreps, Scott A.	2005-04-28
Method for making a semiconductor device comprising a superlattice channel vertically stepped above source and drain regions App 20050090048 - Kreps, Scott A.	2005-04-28
Method for making a semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure App 20050087738 - Mears, Robert J. ; et al.	2005-04-28
Semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure App 20050087736 - Mears, Robert J. ; et al.	2005-04-28
Method for making semiconductor device including band-engineered superlattice Grant 6,878,576 - Mears , et al. April 12, 2	2005-04-12
Semiconductor Device Including Band-engineered Superlattice App 20050017235 - Mears, Robert J. ; et al.	2005-01-27
Semiconductor device including band-engineered superlattice App 20040262596 - Mears, Robert J. ; et al.	2004-12-30
Semiconductor device including band-engineered superlattice App 20040262628 - Mears, Robert J. ; et al.	2004-12-30
Method for making semiconductor device including band-engineered superlattice App 20040261695 - Mears, Robert J. ; et al.	2004-12-30
Semiconductor Device Including Mosfet Having Band-engineered Superlattice App 20040262597 - Mears, Robert J. ; et al.	2004-12-30
Method For Making Semiconductor Device Including Band-engineered Superlattice App 20040266045 - Mears, Robert J. ; et al.	2004-12-30
Method For Making Semiconductor Device Including Band-engineered Superlattice App 20040266046 - Mears, Robert J. ; et al.	2004-12-30
Semiconductor device including band-engineered superlattice App 20040262595 - Mears, Robert J. ; et al.	2004-12-30
Method for making semiconductor device including band-engineered superlattice Grant 6,833,294 - Mears , et al. December 21, 2	2004-12-21
Method for making semiconductor device including band-engineered superlattice Grant 6,830,964 - Mears , et al. December 14, 2	2004-12-14

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