| Patent | Date |
|---|
Self-aligned Gate Endcap (sage) Architectures With Reduced Cap
App 20220310818 - SUNG; Seung Hoon ; et al. | 2022-09-29 |
Memory Cells Based On Thin-film Transistors
App 20220310849 - LAJOIE; Travis W. ; et al. | 2022-09-29 |
Multi-height finfet device by selective oxidation
Grant 11,456,372 - Kim , et al. September 27, 2 | 2022-09-27 |
Thin-film transistors with vertical channels
Grant 11,450,750 - Haratipour , et al. September 20, 2 | 2022-09-20 |
Stacked thin-film transistor based embedded dynamic random-access memory
Grant 11,450,669 - Sharma , et al. September 20, 2 | 2022-09-20 |
Engineering tensile strain buffer in art for high quality Ge channel
Grant 11,450,527 - Le , et al. September 20, 2 | 2022-09-20 |
Contact stacks to reduce hydrogen in thin film transistor
Grant 11,444,205 - Sen Gupta , et al. September 13, 2 | 2022-09-13 |
Field effect transistors with wide bandgap materials
Grant 11,444,159 - Ma , et al. September 13, 2 | 2022-09-13 |
Integrated circuit structures having germanium-based channels
Grant 11,437,472 - Chouksey , et al. September 6, 2 | 2022-09-06 |
Nanowire thin film transistors with textured semiconductors
Grant 11,417,775 - Shivaraman , et al. August 16, 2 | 2022-08-16 |
Vertical thin-film transistors between metal layers
Grant 11,417,770 - Sharma , et al. August 16, 2 | 2022-08-16 |
High-mobility semiconductor source/drain spacer
Grant 11,417,655 - Dewey , et al. August 16, 2 | 2022-08-16 |
Tunneling field effect transistors
Grant 11,404,562 - Huang , et al. August 2, 2 | 2022-08-02 |
Thin-film transistor structures with gas spacer
Grant 11,404,536 - LaJoie , et al. August 2, 2 | 2022-08-02 |
Contact electrodes and dielectric structures for thin film transistors
Grant 11,398,560 - Dewey , et al. July 26, 2 | 2022-07-26 |
Memory cells based on thin-film transistors
Grant 11,393,927 - Lajoie , et al. July 19, 2 | 2022-07-19 |
Transistors with high concentration of germanium
Grant 11,387,320 - Murthy , et al. July 12, 2 | 2022-07-12 |
Encapsulation layers of thin film transistors
Grant 11,387,366 - Sharma , et al. July 12, 2 | 2022-07-12 |
Thin film core-shell fin and nanowire transistors
Grant 11,380,797 - Dewey , et al. July 5, 2 | 2022-07-05 |
Stacked Thin Film Transistors With Nanowires
App 20220208991 - SUNG; Seung Hoon ; et al. | 2022-06-30 |
3d-ferroelectric Random (3d-fram) With Buried Trench Capacitors
App 20220208778 - HARATIPOUR; Nazila ; et al. | 2022-06-30 |
Metal Replacement Plate Line Process For 3d-ferroelectric Random (3d-fram)
App 20220208777 - HARATIPOUR; Nazila ; et al. | 2022-06-30 |
Condensed Source Or Drain Structures With High Germanium Content
App 20220199773 - RACHMADY; Willy ; et al. | 2022-06-23 |
Neighboring Gate-all-around Integrated Circuit Structures Having Conductive Contact Stressor Between Epitaxial Source Or Drain Regions
App 20220199771 - CHOUKSEY; Siddharth ; et al. | 2022-06-23 |
Gate-all-around Integrated Circuit Structures Having Germanium-diffused Nanoribbon Channel Structures
App 20220199774 - WEI; Andy Chih-Hung ; et al. | 2022-06-23 |
Plate Line Architectures For 3d-ferroelectric Random Access Memory (3d-fram)
App 20220199635 - SHIVARAMAN; Shriram ; et al. | 2022-06-23 |
Source/drain recess etch stop layers and bottom wide-gap cap for III-V MOSFETs
Grant 11,367,789 - Huang , et al. June 21, 2 | 2022-06-21 |
Integrated Circuit Structures Having Gesnb Source Or Drain Structures
App 20220190159 - PAUL; Rajat ; et al. | 2022-06-16 |
Top-gate doped thin film transistor
Grant 11,362,215 - Sharma , et al. June 14, 2 | 2022-06-14 |
Field effect transistors with reduced electric field by thickening dielectric on the drain side
Grant 11,362,188 - Basu , et al. June 14, 2 | 2022-06-14 |
Field Effect Transistors With Gate Electrode Self-aligned To Semiconductor Fin
App 20220181442 - Ma; Sean T. ; et al. | 2022-06-09 |
Threshold switching selector based memory
Grant 11,348,973 - Sharma , et al. May 31, 2 | 2022-05-31 |
Strained thin film transistors
Grant 11,342,457 - Majhi , et al. May 24, 2 | 2022-05-24 |
Stacked transistor layout
Grant 11,342,327 - Pillarisetty , et al. May 24, 2 | 2022-05-24 |
Thin Film Transistors With Spacer Controlled Gate Length
App 20220157820 - SHARMA; ABHISHEK A. ; et al. | 2022-05-19 |
Integration method for finfet with tightly controlled multiple fin heights
Grant 11,335,600 - Kim , et al. May 17, 2 | 2022-05-17 |
Source to channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
Grant 11,335,796 - Huang , et al. May 17, 2 | 2022-05-17 |
Thin Film Transistors Having U-shaped Features
App 20220149209 - DEWEY; Gilbert ; et al. | 2022-05-12 |
Stacked thin film transistors with nanowires
Grant 11,309,400 - Sung , et al. April 19, 2 | 2022-04-19 |
Reducing Band-to-band Tunneling In Semiconductor Devices
App 20220109072 - CHU-KUNG; Benjamin ; et al. | 2022-04-07 |
Vertical thin film transistors having self-aligned contacts
Grant 11,296,229 - Sharma , et al. April 5, 2 | 2022-04-05 |
Thin film transistors with spacer controlled gate length
Grant 11,296,087 - Sharma , et al. April 5, 2 | 2022-04-05 |
Low Resistance Approaches For Fabricating Contacts And The Resulting Structures
App 20220102521 - DEWEY; Gilbert ; et al. | 2022-03-31 |
Source/drain Diffusion Barrier For Germanium Nmos Transistors
App 20220093797 - GLASS; Glenn A. ; et al. | 2022-03-24 |
Extension Of Nanocomb Transistor Arrangements To Implement Gate All Around
App 20220093474 - Mishra; Varun ; et al. | 2022-03-24 |
Forksheet Transistors With Dielectric Or Conductive Spine
App 20220093647 - SUNG; Seung Hoon ; et al. | 2022-03-24 |
Field effect transistors with gate electrode self-aligned to semiconductor fin
Grant 11,276,755 - Ma , et al. March 15, 2 | 2022-03-15 |
Thin film transistors having U-shaped features
Grant 11,264,512 - Dewey , et al. March 1, 2 | 2022-03-01 |
Fully self-aligned cross grid vertical memory array
Grant 11,251,227 - Pillarisetty , et al. February 15, 2 | 2022-02-15 |
Thin-film Transistors With Low Contact Resistance
App 20220045220 - SHARMA; Abhishek A. ; et al. | 2022-02-10 |
Non-selective Epitaxial Source/drain Deposition To Reduce Dopant Diffusion For Germanium Nmos Transistors
App 20220037530 - GLASS; Glenn A. ; et al. | 2022-02-03 |
Field Effect Transistors With A Gated Oxide Semiconductor Source/drain Spacer
App 20220028998 - Dewey; Gilbert W. ; et al. | 2022-01-27 |
Transistor With Isolation Below Source And Drain
App 20220028972 - RACHMADY; Willy ; et al. | 2022-01-27 |
Dual Gate Control For Trench Shaped Thin Film Transistors
App 20220028861 - Sharma; Abhishek A. ; et al. | 2022-01-27 |
Recessed Thin-channel Thin-film Transistor
App 20220029025 - SHARMA; Abhishek A. ; et al. | 2022-01-27 |
Reducing band-to-band tunneling in semiconductor devices
Grant 11,233,148 - Chu-Kung , et al. January 25, 2 | 2022-01-25 |
Applications Of Back-end-of-line (beol) Capacitors In Compute-in-memory (cim) Circuits
App 20220012581 - SHARMA; Abhishek ; et al. | 2022-01-13 |
Source/drain diffusion barrier for germanium NMOS transistors
Grant 11,222,977 - Glass , et al. January 11, 2 | 2022-01-11 |
Stacked Forksheet Transistors
App 20210407999 - HUANG; Cheng-Ying ; et al. | 2021-12-30 |
Halogen Treatment For Nmos Contact Resistance Improvement
App 20210407902 - CHOUKSEY; Siddharth ; et al. | 2021-12-30 |
Gate-all-around Integrated Circuit Structures Having Strained Source Or Drain Structures On Gate Dielectric Layer
App 20210408284 - AGRAWAL; Ashish ; et al. | 2021-12-30 |
Gate-all-around Integrated Circuit Structures Having Strained Source Or Drain Structures On Insulator
App 20210408283 - AGRAWAL; Ashish ; et al. | 2021-12-30 |
Plasma Nitridation For Gate Oxide Scaling Of Ge And Sige Transistors
App 20210408239 - CHOUKSEY; Siddharth ; et al. | 2021-12-30 |
Gate-all-around Integrated Circuit Structures Having Strained Dual Nanoribbon Channel Structures
App 20210407996 - AGRAWAL; Ashish ; et al. | 2021-12-30 |
Memory Cells With Ferroelectric Capacitors Separate From Transistor Gate Stacks
App 20210398993 - Haratipour; Nazila ; et al. | 2021-12-23 |
Antiferroelectric Gate Dielectric Transistors And Their Methods Of Fabrication
App 20210399113 - Pillarisetty; Ravi ; et al. | 2021-12-23 |
Optimizing gate profile for performance and gate fill
Grant 11,205,707 - Rahhal-Orabi , et al. December 21, 2 | 2021-12-21 |
Stacked Transistors With Contact Last
App 20210384191 - Pillarisetty; Ravi ; et al. | 2021-12-09 |
Semiconductor Material For Resistive Random Access Memory
App 20210384419 - SHARMA; ABHISHEK A. ; et al. | 2021-12-09 |
Broken bandgap contact
Grant 11,195,924 - Chu-Kung , et al. December 7, 2 | 2021-12-07 |
Fabrication of wrap-around and conducting metal oxide contacts for IGZO non-planar devices
Grant 11,189,700 - Le , et al. November 30, 2 | 2021-11-30 |
Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistors
Grant 11,189,730 - Glass , et al. November 30, 2 | 2021-11-30 |
Thin-film transistors with low contact resistance
Grant 11,189,733 - Sharma , et al. November 30, 2 | 2021-11-30 |
Through Plate Interconnect For A Vertical Mim Capacitor
App 20210366821 - LAJOIE; Travis ; et al. | 2021-11-25 |
Dual gate control for trench shaped thin film transistors
Grant 11,183,594 - Sharma , et al. November 23, 2 | 2021-11-23 |
Transistor structures having multiple threshold voltage channel materials
Grant 11,177,255 - Ma , et al. November 16, 2 | 2021-11-16 |
Transistor with isolation below source and drain
Grant 11,171,207 - Rachmady , et al. November 9, 2 | 2021-11-09 |
Recessed thin-channel thin-film transistor
Grant 11,171,240 - Sharma , et al. November 9, 2 | 2021-11-09 |
Group III-V semiconductor devices having asymmetric source and drain structures
Grant 11,164,747 - Ma , et al. November 2, 2 | 2021-11-02 |
Antiferroelectric gate dielectric transistors and their methods of fabrication
Grant 11,152,482 - Pillarisetty , et al. October 19, 2 | 2021-10-19 |
Wide bandgap group IV subfin to reduce leakage
Grant 11,152,290 - Chu-Kung , et al. October 19, 2 | 2021-10-19 |
Vertical switching device with self-aligned contact
Grant 11,145,763 - Pillarisetty , et al. October 12, 2 | 2021-10-12 |
Field effect transistors with a gated oxide semiconductor source/drain spacer
Grant 11,145,739 - Dewey , et al. October 12, 2 | 2021-10-12 |
Applications of back-end-of-line (BEOL) capacitors in compute-in-memory (CIM) circuits
Grant 11,138,499 - Sharma , et al. October 5, 2 | 2021-10-05 |
Finfet Transistor Having A Doped Subfin Structure To Reduce Channel To Substrate Leakage
App 20210296180 - DEWEY; Gilbert ; et al. | 2021-09-23 |
Fabrication Of Non-planar Silicon Germanium Transistors Using Silicon Replacement
App 20210296506 - Wei; Andy Chih-Hung ; et al. | 2021-09-23 |
Techniques And Mechanisms For Operation Of Stacked Transistors
App 20210288049 - PILLARISETTY; Ravi ; et al. | 2021-09-16 |
Threshold Switching Selector Based Memory
App 20210288108 - SHARMA; ABHISHEK A. ; et al. | 2021-09-16 |
Through plate interconnect for a vertical MIM capacitor
Grant 11,121,073 - Lajoie , et al. September 14, 2 | 2021-09-14 |
Transistors employing carbon-based etch stop layer for preserving source/drain material during contact trench etch
Grant 11,121,030 - Glass , et al. September 14, 2 | 2021-09-14 |
FINFET transistor having a doped subfin structure to reduce channel to substrate leakage
Grant 11,107,890 - Dewey , et al. August 31, 2 | 2021-08-31 |
Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors
Grant 11,101,356 - Glass , et al. August 24, 2 | 2021-08-24 |
Integrated circuit with germanium-rich channel transistors including one or more dopant diffusion barrier elements
Grant 11,101,350 - Glass , et al. August 24, 2 | 2021-08-24 |
Techniques and mechanisms for operation of stacked transistors
Grant 11,101,270 - Pillarisetty , et al. August 24, 2 | 2021-08-24 |
Nanowire Transistor Fabrication With Hardmask Layers
App 20210257457 - Sung; Seung Hoon ; et al. | 2021-08-19 |
Three terminal selectors for memory applications and their methods of fabrication
Grant 11,088,204 - Pillarisetty , et al. August 10, 2 | 2021-08-10 |
Transistors with lattice matched gate structure
Grant 11,081,570 - Jambunathan , et al. August 3, 2 | 2021-08-03 |
Microelectronic Transistor Source/drain Formation Using Angled Etching
App 20210210620 - Sung; Seung Hoon ; et al. | 2021-07-08 |
Art trench spacers to enable fin release for non-lattice matched channels
Grant 11,049,773 - Dewey , et al. June 29, 2 | 2021-06-29 |
Field Effect Transistors With A Gated Oxide Semiconductor Source/drain Spacer
App 20210193814 - Dewey; Gilbert W. ; et al. | 2021-06-24 |
Germanium transistor structure with underlap tip to reduce gate induced barrier lowering/short channel effect while minimizing impact on drive current
Grant 11,031,499 - Rachmady , et al. June 8, 2 | 2021-06-08 |
Non-planar gate thin film transistor
Grant 11,031,503 - Sharma , et al. June 8, 2 | 2021-06-08 |
Multilayer High-k Gate Dielectric For A High Performance Logic Transistor
App 20210167182 - SUNG; Seung Hoon ; et al. | 2021-06-03 |
Deep Gate-All-Around Semiconductor Device having Germanium or Group III-V Active Layer
App 20210167216 - Pillarisetty; Ravi ; et al. | 2021-06-03 |
Gradient doping to lower leakage in low band gap material devices
Grant 11,024,713 - Sung , et al. June 1, 2 | 2021-06-01 |
Nanowire transistor fabrication with hardmask layers
Grant 11,024,714 - Sung , et al. June 1, 2 | 2021-06-01 |
Epitaxial buffer to reduce sub-channel leakage in MOS transistors
Grant 11,004,954 - Jambunathan , et al. May 11, 2 | 2021-05-11 |
Method For Fabricating Transistor With Thinned Channel
App 20210135007 - Brask; Justin K. ; et al. | 2021-05-06 |
Local interconnect for group IV source/drain regions
Grant 10,998,270 - Sung , et al. May 4, 2 | 2021-05-04 |
Interconnect Structures For Integrated Circuits
App 20210125992 - LAJOIE; Travis ; et al. | 2021-04-29 |
Thin film cap to lower leakage in low band gap material devices
Grant 10,985,263 - Sung , et al. April 20, 2 | 2021-04-20 |
Integrated Circuit Structures Having Differentiated Interconnect Lines In A Same Dielectric Layer
App 20210098373 - LAJOIE; Travis W. ; et al. | 2021-04-01 |
Vertical transistor devices and techniques
Grant 10,964,820 - Pillarisetty , et al. March 30, 2 | 2021-03-30 |
Vertical shared gate thin-film transistor-based charge storage memory
Grant 10,964,701 - Sharma , et al. March 30, 2 | 2021-03-30 |
High-mobility field effect transistors with wide bandgap fin cladding
Grant 10,957,769 - Ma , et al. March 23, 2 | 2021-03-23 |
Two transistor, one resistor non-volatile gain cell memory and storage element
Grant 10,950,301 - Rios , et al. March 16, 2 | 2021-03-16 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer
Grant 10,950,733 - Pillarisetty , et al. March 16, 2 | 2021-03-16 |
Three Terminal Selectors For Memory Applications And Their Methods Of Fabrication
App 20210074766 - Pillarisetty; Ravi ; et al. | 2021-03-11 |
Method for fabricating transistor with thinned channel
Grant 10,937,907 - Brask , et al. March 2, 2 | 2021-03-02 |
Iii-v Source/drain In Top Nmos Transistors For Low Temperature Stacked Transistor Contacts
App 20210057413 - DEWEY; Gilbert ; et al. | 2021-02-25 |
Systems, methods, and apparatuses for implementing bi-layer semiconducting oxides in source and drain for low access and contact resistance of thin film transistors
Grant 10,930,791 - Dewey , et al. February 23, 2 | 2021-02-23 |
Sub-fin leakage control in semicondcutor devices
Grant 10,930,738 - Basu , et al. February 23, 2 | 2021-02-23 |
Ge NANO wire transistor with GAAS as the sacrificial layer
Grant 10,930,766 - Rachmady , et al. February 23, 2 | 2021-02-23 |
Fabrication Of Non-planar Igzo Devices For Improved Electrostatics
App 20210050455 - LE; Van H. ; et al. | 2021-02-18 |
Semiconductor device with released source and drain
Grant 10,903,364 - Rachmady , et al. January 26, 2 | 2021-01-26 |
Device isolation by fixed charge
Grant 10,892,335 - Ma , et al. January 12, 2 | 2021-01-12 |
Doped Insulator Cap To Reduce Source/drain Diffusion For Germanium Nmos Transistors
App 20210005722 - Glass; Glenn A. ; et al. | 2021-01-07 |
Source/drain Diffusion Barrier For Germanium Nmos Transistors
App 20210005748 - Glass; Glenn A. ; et al. | 2021-01-07 |
Group III-V material transistors employing nitride-based dopant diffusion barrier layer
Grant 10,886,408 - Mohapatra , et al. January 5, 2 | 2021-01-05 |
Intermediate Separation Layers At The Back-end-of-line
App 20200411426 - LAJOIE; Travis W. ; et al. | 2020-12-31 |
Channel Formation For Three Dimensional Transistors
App 20200411669 - SHARMA; Abhishek ; et al. | 2020-12-31 |
Capacitor Connections In Dielectric Layers
App 20200411525 - LAJOIE; Travis W. ; et al. | 2020-12-31 |
Capacitor Separations In Dielectric Layers
App 20200411520 - LAJOIE; Travis W. ; et al. | 2020-12-31 |
Epitaxial Layer With Substantially Parallel Sides
App 20200411315 - HUANG; Cheng-Ying ; et al. | 2020-12-31 |
Air Gaps And Capacitors In Dielectric Layers
App 20200411635 - LAJOIE; Travis W. ; et al. | 2020-12-31 |
Stacked Trigate Transistors With Dielectric Isolation And Process For Forming Such
App 20200411511 - RACHMADY; Willy ; et al. | 2020-12-31 |
Forming An Oxide Volume Within A Fin
App 20200411365 - HUANG; Cheng-Ying ; et al. | 2020-12-31 |
Transistors with non-vertical gates
Grant 10,879,365 - Huang , et al. December 29, 2 | 2020-12-29 |
Trench Capacitor With Extended Dielectric Layer
App 20200395435 - HARATIPOUR; NAZILA ; et al. | 2020-12-17 |
Transistor Gate Trench Engineering To Decrease Capacitance And Resistance
App 20200373403 - SUNG; SEUNG HOON ; et al. | 2020-11-26 |
Supperlatice channel included in a trench
Grant 10,847,619 - Huang , et al. November 24, 2 | 2020-11-24 |
Fabrication of non-planar IGZO devices for improved electrostatics
Grant 10,847,656 - Le , et al. November 24, 2 | 2020-11-24 |
Doped Sti To Reduce Source/drain Diffusion For Germanium Nmos Transistors
App 20200365711 - Glass; Glenn A. ; et al. | 2020-11-19 |
Nanowire transistors with embedded dielectric spacers
Grant 10,840,352 - Rachmady , et al. November 17, 2 | 2020-11-17 |
Thin Film Transistors Having Alloying Source Or Drain Metals
App 20200350412 - KU; Chieh-Jen ; et al. | 2020-11-05 |
Encapsulation Layers Of Thin Film Transistors
App 20200343379 - SHARMA; Abhishek A. ; et al. | 2020-10-29 |
Indium-rich NMOS transistor channels
Grant 10,818,793 - Mohapatra , et al. October 27, 2 | 2020-10-27 |
Thin Film Transistors Having Double Gates
App 20200335635 - SHARMA; Abhishek A. ; et al. | 2020-10-22 |
Aluminum Indium Phosphide Subfin Germanium Channel Transistors
App 20200328278 - Metz; Matthew V. ; et al. | 2020-10-15 |
Field Effect Transistors With Gate Electrode Self-aligned To Semiconductor Fin
App 20200321435 - Ma; Sean T. ; et al. | 2020-10-08 |
High-mobility Field Effect Transistors With Wide Bandgap Fin Cladding
App 20200321439 - Ma; Sean T. ; et al. | 2020-10-08 |
Differential work function between gate stack metals to reduce parasitic capacitance
Grant 10,797,150 - Ma , et al. October 6, 2 | 2020-10-06 |
Gate Stacks For Finfet Transistors
App 20200312971 - PENUMATCHA; Ashish ; et al. | 2020-10-01 |
Mfm Capacitor And Process For Forming Such
App 20200312950 - HARATIPOUR; Nazila ; et al. | 2020-10-01 |
Mfm Capacitor With Multilayered Oxides And Metals And Processes For Forming Such
App 20200312949 - HARATIPOUR; Nazila ; et al. | 2020-10-01 |
Dual Transistor Gate Workfunctions And Related Apparatuses, Systems, And Methods
App 20200312973 - MA; Sean T. ; et al. | 2020-10-01 |
Integration Of Metasurface Lens On Wafer Level Substrate
App 20200303442 - MAJHI; Prashant ; et al. | 2020-09-24 |
Method to achieve a uniform Group IV material layer in an aspect ratio trapping trench
Grant 10,784,352 - Gardner , et al. Sept | 2020-09-22 |
Transistor gate trench engineering to decrease capacitance and resistance
Grant 10,784,360 - Sung , et al. Sept | 2020-09-22 |
Stacked Transistors Having Device Strata With Different Channel Widths
App 20200295003 - Dewey; Gilbert W. ; et al. | 2020-09-17 |
Source To Channel Junction For Iii-v Metal-oxide-semiconductor Field Effect Transistors (mosfets)
App 20200287036 - HUANG; Cheng-Ying ; et al. | 2020-09-10 |
Beaded fin transistor
Grant 10,770,593 - Dewey , et al. Sep | 2020-09-08 |
Transistor With Isolation Below Source And Drain
App 20200279916 - Rachmady; Willy ; et al. | 2020-09-03 |
Transistor Structures Having Multiple Threshold Voltage Channel Materials
App 20200279845 - Ma; Sean T. ; et al. | 2020-09-03 |
Etchstop Regions In Fins Of Semiconductor Devices
App 20200279941 - HUANG; Cheng-Ying ; et al. | 2020-09-03 |
Reducing Off-state Leakage In Semiconductor Devices
App 20200279910 - Basu; Dipanjan ; et al. | 2020-09-03 |
Reduced Electric Field By Thickening Dielectric On The Drain Side
App 20200279931 - Basu; Dipanjan ; et al. | 2020-09-03 |
Recessed Thin-channel Thin-film Transistor
App 20200279953 - Sharma; Abhishek A. ; et al. | 2020-09-03 |
Stacked Transistor Layout
App 20200279847 - Pillarisetty; Ravi ; et al. | 2020-09-03 |
Antiferroelectric Gate Dielectric Transistors And Their Methods Of Fabrication
App 20200273962 - Pillarisetty; Ravi ; et al. | 2020-08-27 |
Germanium-rich Channel Transistors Including One Or More Dopant Diffusion Barrier Elements
App 20200273952 - GLASS; GLENN A. ; et al. | 2020-08-27 |
Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same
Grant 10,756,198 - Dewey , et al. A | 2020-08-25 |
Reducing Band-to-band Tunneling In Semiconductor Devices
App 20200266296 - Chu-Kung; Benjamin ; et al. | 2020-08-20 |
Strain compensation in transistors
Grant 10,748,993 - Le , et al. A | 2020-08-18 |
Techniques for forming transistors including group III-V material nanowires using sacrificial group IV material layers
Grant 10,749,032 - Mohapatra , et al. A | 2020-08-18 |
Fin-based III-V/SI or GE CMOS SAGE integration
Grant 10,748,900 - Rachmady , et al. A | 2020-08-18 |
Non-selective Epitaxial Source/drain Deposition To Reduce Dopant Diffusion For Germanium Nmos Transistors
App 20200258982 - A1 | 2020-08-13 |
Aluminum indium phosphide subfin germanium channel transistors
Grant 10,734,488 - Metz , et al. | 2020-08-04 |
High mobility asymmetric field effect transistors with a band-offset semiconductor drain spacer
Grant 10,734,511 - Huang , et al. | 2020-08-04 |
Heterojunction TFETs employing an oxide semiconductor
Grant 10,734,513 - Majhi , et al. | 2020-08-04 |
Selectively regrown top contact for vertical semiconductor devices
Grant 10,727,339 - Chu-Kung , et al. | 2020-07-28 |
Thin-film Transistors With Low Contact Resistance
App 20200235246 - Sharma; Abhishek A. ; et al. | 2020-07-23 |
Self-aligned Contacts For Thin Film Transistors
App 20200227568 - LE; Van H. ; et al. | 2020-07-16 |
Stacked Thin Film Transistors With Nanowires
App 20200227535 - Sung; Seung Hoon ; et al. | 2020-07-16 |
Vertical Switching Device With Self-aligned Contact
App 20200220023 - Pillarisetty; Ravi ; et al. | 2020-07-09 |
Charge Trap Layer In Back-gated Thin-film Transistors
App 20200220024 - Sharma; Abhishek A. ; et al. | 2020-07-09 |
Gate-all-around Integrated Circuit Structures Having Depopulated Channel Structures Using Bottom-up Oxidation Approach
App 20200219979 - RACHMADY; Willy ; et al. | 2020-07-09 |
Aluminum Indium Phosphide Subfin Germanium Channel Transistors
App 20200212186 - Metz; Matthew V. ; et al. | 2020-07-02 |
Three Dimensional Integrated Circuits With Stacked Transistors
App 20200211905 - HUANG; Cheng-Ying ; et al. | 2020-07-02 |
Group Iii-v Semiconductor Devices Having Asymmetric Source And Drain Structures
App 20200203169 - MA; Sean T. ; et al. | 2020-06-25 |
Cladding layer epitaxy via template engineering for heterogeneous integration on silicon
Grant 10,693,008 - Mukherjee , et al. | 2020-06-23 |
Germanium-rich channel transistors including one or more dopant diffusion barrier elements
Grant 10,692,973 - Glass , et al. | 2020-06-23 |
Memory Cells Based On Vertical Thin-film Transistors
App 20200194434 - ALZATE VINASCO; Juan G. ; et al. | 2020-06-18 |
Transistors On Heterogeneous Bonding Layers
App 20200194570 - Jun; Kimin ; et al. | 2020-06-18 |
Device Isolation By Fixed Charge
App 20200185501 - Ma; Sean T. ; et al. | 2020-06-11 |
Thin Film Transistor With Charge Trap Layer
App 20200185504 - Sharma; Abhishek A. ; et al. | 2020-06-11 |
Tunneling Field Effect Transistors
App 20200168724 - Huang; Cheng-Ying ; et al. | 2020-05-28 |
Nanowire Transistors With Embedded Dielectric Spacers
App 20200168703 - Rachmady; Willy ; et al. | 2020-05-28 |
Low Schottky barrier contact structure for Ge NMOS
Grant 10,665,688 - Rachmady , et al. | 2020-05-26 |
Strained Thin Film Transistors
App 20200161473 - MAJHI; Prashant ; et al. | 2020-05-21 |
Local cell-level power gating switch
Grant 10,659,046 - Rios , et al. | 2020-05-19 |
Thin Film Transistors With Spacer Controlled Gate Length
App 20200152635 - SHARMA; ABHISHEK A. ; et al. | 2020-05-14 |
Pseudomorphic InGaAs on GaAs for gate-all-around transistors
Grant 10,651,288 - Mohapatra , et al. | 2020-05-12 |
Reduced transistor resistance using doped layer
Grant 10,651,313 - Huang , et al. | 2020-05-12 |
Transistors With High Concentration Of Germanium
App 20200144362 - MURTHY; Anand S. ; et al. | 2020-05-07 |
Transistor With Wide Bandgap Channel And Narrow Bandgap Source/drain
App 20200144374 - MA; Sean T. ; et al. | 2020-05-07 |
Integrated circuit die having back-end-of-line transistors
Grant 10,644,140 - Le , et al. | 2020-05-05 |
Systems, methods, and apparatuses for implementing a high mobility low contact resistance semiconducting oxide in metal contact vias for thin film transistors
Grant 10,644,123 - Dewey , et al. | 2020-05-05 |
Strained silicon layer with relaxed underlayer
Grant 10,644,111 - Chu-Kung , et al. | 2020-05-05 |
III-V finfet transistor with V-groove S/D profile for improved access resistance
Grant 10,644,137 - Rachmady , et al. | 2020-05-05 |
FINFET transistor having a tapered subfin structure
Grant 10,636,912 - Dewey , et al. | 2020-04-28 |
Thin Film Core-shell Fin And Nanowire Transistors
App 20200127142 - DEWEY; Gilbert ; et al. | 2020-04-23 |
Thin-film Transistors With Vertical Channels
App 20200105892 - HARATIPOUR; Nazila ; et al. | 2020-04-02 |
Deep In Memory Architecture Using Resistive Switches
App 20200105833 - KAVALIEROS; Jack T. ; et al. | 2020-04-02 |
Memory Cells Based On Thin-film Transistors
App 20200098932 - LAJOIE; Travis W. ; et al. | 2020-03-26 |
Spacer And Channel Layer Of Thin-film Transistors
App 20200098934 - SHIVARAMAN; Shriram ; et al. | 2020-03-26 |
Vertical Thin-film Transistors Between Metal Layers
App 20200098931 - SHARMA; Abhishek ; et al. | 2020-03-26 |
Contact Electrodes And Dielectric Structures For Thin Film Transistors
App 20200098887 - DEWEY; Gilbert ; et al. | 2020-03-26 |
High Performance Semiconductor Oxide Material Channel Regions For Nmos
App 20200098753 - Dewey; Gilbert ; et al. | 2020-03-26 |
Contact Stacks To Reduce Hydrogen In Thin Film Transistor
App 20200098657 - SEN GUPTA; Arnab ; et al. | 2020-03-26 |
Stacked-substrate Fpga Semiconductor Devices
App 20200098737 - Sharma; Abhishek A. ; et al. | 2020-03-26 |
Advanced Encryption Standard Semiconductor Devices Fabricated On A Stacked-substrate
App 20200099509 - Sharma; Abhishek A. ; et al. | 2020-03-26 |
Contact Electrodes For Vertical Thin-film Transistors
App 20200098930 - LE; Van H. ; et al. | 2020-03-26 |
Techniques And Mechanisms For Operation Of Stacked Transistors
App 20200098754 - PILLARISETTY; Ravi ; et al. | 2020-03-26 |
Transistors With Ferroelectric Gates
App 20200098926 - Sharma; Abhishek A. ; et al. | 2020-03-26 |
Contact Stacks To Reduce Hydrogen In Semiconductor Devices
App 20200098874 - WEBER; Justin ; et al. | 2020-03-26 |
Stacked-substrate Dram Semiconductor Devices
App 20200098762 - Sharma; Abhishek A. ; et al. | 2020-03-26 |
Epitaxial Layers On Contact Electrodes For Thin-film Transistors
App 20200098875 - SUNG; Seung Hoon ; et al. | 2020-03-26 |
Ferroelectric Gate Stack For Band-to-band Tunneling Reduction
App 20200098925 - Dewey; Gilbert ; et al. | 2020-03-26 |
Non-linear Gate Dielectric Material For Thin-film Transistors
App 20200091274 - SHARMA; Abhishek ; et al. | 2020-03-19 |
Two Transistor Memory Cell Using Stacked Thin-film Transistors
App 20200091156 - Sharma; Abhishek A. ; et al. | 2020-03-19 |
Transistors having ultra thin fin profiles and their methods of fabrication
Grant 10,593,785 - Gardner , et al. | 2020-03-17 |
Thin Film Cap To Lower Leakage In Low Band Gap Material Devices
App 20200083354 - SUNG; Seung Hoon ; et al. | 2020-03-12 |
Structures And Methods For Memory Cells
App 20200083225 - Ma; Sean T. ; et al. | 2020-03-12 |
Apparatus and methods to create an active channel having indium rich side and bottom surfaces
Grant 10,586,848 - Mohapatra , et al. | 2020-03-10 |
Sub-fin Leakage Control In Semicondcutor Devices
App 20200075727 - Basu; Dipanjan ; et al. | 2020-03-05 |
Low band gap semiconductor devices having reduced gate induced drain leakage (GIDL)
Grant 10,580,882 - Dewey , et al. | 2020-03-03 |
Transistor with a sub-fin dielectric region under a gate
Grant 10,580,865 - Rachmady , et al. | 2020-03-03 |
Engineering Tensile Strain Buffer In Art For High Quality Ge Channel
App 20200066515 - LE; Van H. ; et al. | 2020-02-27 |
Systems, Methods, And Apparatuses For Implementing Bi-layer Semiconducting Oxides In Source And Drain For Low Access And Contact
App 20200066912 - DEWEY; Gilbert ; et al. | 2020-02-27 |
Field Effect Transistors With Wide Bandgap Materials
App 20200066843 - MA; Sean T. ; et al. | 2020-02-27 |
An Indium-containing Fin Of A Transistor Device With An Indium-rich Core
App 20200066855 - MOHAPATRA; Chandra S. ; et al. | 2020-02-27 |
Selective epitaxially grown III-V materials based devices
Grant 10,573,717 - Goel , et al. Feb | 2020-02-25 |
Apparatus and methods to create a buffer to reduce leakage in microelectronic transistors
Grant 10,559,683 - Mohapatra , et al. Feb | 2020-02-11 |
Subfin Leakage Suppression Using Fixed Charge
App 20200044059 - Ma; Sean T. ; et al. | 2020-02-06 |
Nanowire Thin Film Transistors With Textured Semiconductors
App 20200035839 - Shivaraman; Shriram ; et al. | 2020-01-30 |
Stacked Thin-film Transistor Based Embedded Dynamic Random-access Memory
App 20200035683 - Sharma; Abhishek A. ; et al. | 2020-01-30 |
Low damage self-aligned amphoteric FINFET tip doping
Grant 10,546,858 - Kavalieros , et al. Ja | 2020-01-28 |
Tunneling Contacts For A Transistor
App 20200013861 - Sharma; Abhishek A. ; et al. | 2020-01-09 |
Dopant diffusion barrier for source/drain to curb dopant atom diffusion
Grant 10,529,808 - Mohapatra , et al. J | 2020-01-07 |
Integrated Circuit Structures Having Germanium-based Channels
App 20200006492 - CHOUKSEY; Siddharth ; et al. | 2020-01-02 |
Local Interconnect For Group Iv Source/drain Regions
App 20200006229 - SUNG; SEUNG HOON ; et al. | 2020-01-02 |
Dielectric Lining Layers For Semiconductor Devices
App 20200006501 - Rachmady; Willy ; et al. | 2020-01-02 |
Vertical Thin Film Transistors Having Self-aligned Contacts
App 20200006572 - SHARMA; Abhishek A. ; et al. | 2020-01-02 |
Thin Film Transistors Having U-shaped Features
App 20200006575 - DEWEY; Gilbert ; et al. | 2020-01-02 |
Transistors With Non-vertical Gates
App 20200006510 - Huang; Cheng-Ying ; et al. | 2020-01-02 |
Vertical Shared Gate Thin-film Transistor-based Charge Storage Memory
App 20190393223 - SHARMA; Abhishek Anil ; et al. | 2019-12-26 |
A Fully Self-aligned Cross Grid Vertical Memory Array
App 20190393267 - PILLARISETTY; Ravi ; et al. | 2019-12-26 |
Amorphous Oxide Semiconductor Memory Devices
App 20190385949 - Le; Van H. ; et al. | 2019-12-19 |
Method For Fabricating Transistor With Thinned Channel
App 20190371940 - Brask; Justin K. ; et al. | 2019-12-05 |
III-V semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the same
Grant 10,497,814 - Kennel , et al. De | 2019-12-03 |
Transistor including tensile-strained germanium channel
Grant 10,483,353 - Mohapatra , et al. Nov | 2019-11-19 |
Germanium-rich Channel Transistors Including One Or More Dopant Diffusion Barrier Elements
App 20190348500 - GLASS; Glenn A. ; et al. | 2019-11-14 |
Vertical Transistor Devices And Techniques
App 20190348540 - Pillarisetty; Ravi ; et al. | 2019-11-14 |
Strain Compensation In Transistors
App 20190348499 - LE; Van H. ; et al. | 2019-11-14 |
Transistors Employing Cap Layer For Ge-rich Source/drain Regions
App 20190348415 - SUNG; SEUNG HOON ; et al. | 2019-11-14 |
Making a defect free fin based device in lateral epitaxy overgrowth region
Grant 10,475,706 - Goel , et al. Nov | 2019-11-12 |
Gradient Doping To Lower Leakage In Low Band Gap Material Devices
App 20190341453 - Sung; Seung Hoon ; et al. | 2019-11-07 |
A Finfet Transistor Having A Tapered Subfin Structure
App 20190341481 - DEWEY; Gilbert ; et al. | 2019-11-07 |
Transistors Employing Carbon-based Etch Stop Layer For Preserving Source/drain Material During Contact Trench Etch
App 20190341300 - GLASS; GLENN A. ; et al. | 2019-11-07 |
Apparatus and methods to create a buffer which extends into a gated region of a transistor
Grant 10,461,193 - Mohapatra , et al. Oc | 2019-10-29 |
Well-based integration of heteroepitaxial N-type transistors with P-type transistors
Grant 10,461,082 - Rachmady , et al. Oc | 2019-10-29 |
Thin Film Diode Based Back-end Temperature Sensors
App 20190326403 - Pillarisetty; Ravi ; et al. | 2019-10-24 |
High-electron-mobility transistors with heterojunction dopant diffusion barrier
Grant 10,446,685 - Mohapatra , et al. Oc | 2019-10-15 |
Top-gate Doped Thin Film Transistor
App 20190305138 - Sharma; Abhishek A. ; et al. | 2019-10-03 |
Thin-film Transistor Structures With Gas Spacer
App 20190305081 - LaJoie; Travis W. ; et al. | 2019-10-03 |
Dual Gate Control For Trench Shaped Thin Film Transistors
App 20190305137 - Sharma; Abhishek A. ; et al. | 2019-10-03 |
Transistor Including Wrap Around Source And Drain Contacts
App 20190305136 - MA; Sean ; et al. | 2019-10-03 |
Self-aligned Bitline And Capacitor Via Formation
App 20190304982 - SHARMA; Abhishek A. ; et al. | 2019-10-03 |
Asymmetrical Semiconductor Nanowire Field-effect Transistor
App 20190305085 - Sung; Seung Hoon ; et al. | 2019-10-03 |
Through Plate Interconnect For A Vertical Mim Capacitor
App 20190304897 - LAJOIE; Travis ; et al. | 2019-10-03 |
High electron mobility transistors with localized sub-fin isolation
Grant 10,431,690 - Rachmady , et al. O | 2019-10-01 |
Source/drain Recess Etch Stop Layers And Bottom Wide-gap Cap For Iii-v Mosfets
App 20190296145 - HUANG; Cheng-Ying ; et al. | 2019-09-26 |
Non-planar gate all-around device and method of fabrication thereof
Grant 10,418,487 - Rachmady , et al. Sept | 2019-09-17 |
High mobility field effect transistors with a band-offset semiconductor source/drain spacer
Grant 10,411,007 - Dewey , et al. Sept | 2019-09-10 |
Transistor Source/drain Amorphous Interlayer Arrangements
App 20190273133 - Agrawal; Ashish ; et al. | 2019-09-05 |
Dielectric metal oxide cap for channel containing germanium
Grant 10,403,733 - Dewey , et al. Sep | 2019-09-03 |
Art Trench Spacers To Enable Fin Release For Non-lattice Matched Channels
App 20190267289 - DEWEY; Gilbert ; et al. | 2019-08-29 |
Reconfigurable Interconnect Arrangements Using Thin-film Transistors
App 20190267319 - Sharma; Abhishek A. ; et al. | 2019-08-29 |
Metallic Sealants In Transistor Arrangements
App 20190259844 - Sharma; Abhishek A. ; et al. | 2019-08-22 |
Strain compensation in transistors
Grant 10,388,733 - Le , et al. A | 2019-08-20 |
High-electron-mobility transistors with counter-doped dopant diffusion barrier
Grant 10,388,764 - Mohapatra , et al. A | 2019-08-20 |
Two Transistor, One Resistor Non-volatile Gain Cell Memory And Storage Element
App 20190252020 - RIOS; Rafael ; et al. | 2019-08-15 |
Transistor fin formation via cladding on sacrificial core
Grant 10,373,977 - Glass , et al. | 2019-08-06 |
Method for fabricating transistor with thinned channel
Grant 10,367,093 - Brask , et al. July 30, 2 | 2019-07-30 |
Forming a non-planar transistor having a quantum well channel
Grant 10,355,112 - Chui , et al. July 16, 2 | 2019-07-16 |
Strained Silicon Layer With Relaxed Underlayer
App 20190214466 - Chu-Kung; Benjamin ; et al. | 2019-07-11 |
Reduced Transistor Resistance Using Doped Layer
App 20190214500 - Huang; Cheng-Ying ; et al. | 2019-07-11 |
Epitaxial Buffer To Reduce Sub-channel Leakage In Mos Transistors
App 20190214479 - JAMBUNATHAN; KARTHIK ; et al. | 2019-07-11 |
Transistor with a subfin layer
Grant 10,347,767 - Rachmady , et al. July 9, 2 | 2019-07-09 |
Stackable thin film memory
Grant 10,340,275 - Karpov , et al. | 2019-07-02 |
High mobility field effect transistors with a retrograded semiconductor source/drain
Grant 10,340,374 - Dewey , et al. | 2019-07-02 |
Non-planar Gate Thin Film Transistor
App 20190198675 - SHARMA; ABHISHEK A. ; et al. | 2019-06-27 |
Group Iii-v Material Transistors Employing Nitride-based Dopant Diffusion Barrier Layer
App 20190198658 - Mohapatra; Chandra S. ; et al. | 2019-06-27 |
Ge Nano Wire Transistor With Gaas As The Sacrificial Layer
App 20190189770 - RACHMADY; Willy ; et al. | 2019-06-20 |
Transistors With Lattice Matched Gate Structure
App 20190189785 - JAMBUNATHAN; KARTHIK ; et al. | 2019-06-20 |
Indium-rich Nmos Transistor Channels
App 20190189794 - MOHAPATRA; CHANDRA S. ; et al. | 2019-06-20 |
Supperlatice Channel Included In A Trench
App 20190172911 - Huang; Cheng-Ying ; et al. | 2019-06-06 |
Semiconductor Device With Released Source And Drain
App 20190172941 - RACHMADY; Willy ; et al. | 2019-06-06 |
Systems, Methods, And Apparatuses For Implementing A High Mobility Low Contact Resistance Semiconducting Oxide In Metal Contact
App 20190172921 - DEWEY; Gilbert ; et al. | 2019-06-06 |
Two-dimensional condensation for uniaxially strained semiconductor fins
Grant 10,304,929 - Kavalieros , et al. | 2019-05-28 |
High-mobility Semiconductor Source/drain Spacer
App 20190148378 - DEWEY; Gilbert ; et al. | 2019-05-16 |
Iii-v Finfet Transistor With V-groove S/d Profile For Improved Access Resistance
App 20190148512 - RACHMADY; Willy ; et al. | 2019-05-16 |
Strain Compensation In Transistors
App 20190148491 - LE; Van H. ; et al. | 2019-05-16 |
Apparatus and methods to create an indium gallium arsenide active channel having indium rich surfaces
Grant 10,290,709 - Glass , et al. | 2019-05-14 |
A Finfet Transistor Having A Doped Subfin Structure To Reduce Channel To Substrate Leakage
App 20190140054 - DEWEY; Gilbert ; et al. | 2019-05-09 |
Applications Of Back-end-of-line (beol) Capacitors In Compute-in-memory (cim) Circuits
App 20190138893 - SHARMA; Abhishek ; et al. | 2019-05-09 |
Broken Bandgap Contact
App 20190140061 - CHU-KUNG; Benjamin ; et al. | 2019-05-09 |
Integrated Circuit Die Having Back-end-of-line Transistors
App 20190131437A1 - | 2019-05-02 |
Wide Bandgap Group Iv Subfin To Reduce Leakage
App 20190122972A1 - | 2019-04-25 |
Germanium Transistor Structure With Underlap Tip To Reduce Gate Induced Barrier Lowering/short Channel Effect While Minimizing Impact On Drive Current
App 20190103486A1 - | 2019-04-04 |
Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy
Grant 10,249,490 - Goel , et al. | 2019-04-02 |
Ge nano wire transistor with GaAs as the sacrificial layer
Grant 10,249,740 - Rachmady , et al. | 2019-04-02 |
Offstate parasitic leakage reduction for tunneling field effect transistors
Grant 10,249,742 - Le , et al. | 2019-04-02 |
Carrier confinement for high mobility channel devices
Grant 10,243,078 - Dewey , et al. | 2019-03-26 |
Techniques for forming non-planar germanium quantum well devices
Grant 10,236,369 - Pillarisetty , et al. | 2019-03-19 |
Indium-rich NMOS transistor channels
Grant 10,229,997 - Mohapatra , et al. | 2019-03-12 |
Strain compensation in transistors
Grant 10,224,399 - Le , et al. | 2019-03-05 |
High-mobility semiconductor source/drain spacer
Grant 10,211,208 - Dewey , et al. Feb | 2019-02-19 |
Semiconductor device having germanium active layer with underlying diffusion barrier layer
Grant 10,186,580 - Rachmady , et al. Ja | 2019-01-22 |
Selective epitaxially grown III-V materials based devices
Grant 10,181,518 - Goel , et al. Ja | 2019-01-15 |
Techniques for forming contacts to quantum well transistors
Grant 10,177,249 - Pillarisetty , et al. J | 2019-01-08 |
Extreme high mobility CMOS logic
Grant 10,141,437 - Datta , et al. Nov | 2018-11-27 |
Aspect ratio trapping (ART) for fabricating vertical semiconductor devices
Grant 10,096,709 - Le , et al. October 9, 2 | 2018-10-09 |
Methods and structures to prevent sidewall defects during selective epitaxy
Grant 10,096,474 - Mukherjee , et al. October 9, 2 | 2018-10-09 |
High mobility nanowire fin channel on silicon substrate formed using sacrificial sub-fin
Grant 10,084,043 - Dewey , et al. September 25, 2 | 2018-09-25 |
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
Grant 10,084,058 - Majhi , et al. September 25, 2 | 2018-09-25 |
Variable gate width for gate all-around transistors
Grant 10,038,054 - Rachmady , et al. July 31, 2 | 2018-07-31 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer
Grant 10,026,845 - Pillarisetty , et al. July 17, 2 | 2018-07-17 |
Semiconductor device with isolated body portion
Grant 10,026,829 - Cappellani , et al. July 17, 2 | 2018-07-17 |
Forming arsenide-based complementary logic on a single substrate
Grant 9,991,172 - Hudait , et al. June 5, 2 | 2018-06-05 |
Germanium tin channel transistors
Grant 9,972,686 - Pillarisetty , et al. May 15, 2 | 2018-05-15 |
Apparatus and methods of forming fin structures with asymmetric profile
Grant 9,929,273 - Rachmady , et al. March 27, 2 | 2018-03-27 |
Strain compensation in transistors
Grant 9,911,807 - Le , et al. March 6, 2 | 2018-03-06 |
GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation
Grant 9,905,651 - Pillarisetty , et al. February 27, 2 | 2018-02-27 |
Conductivity improvements for III-V semiconductor devices
Grant 9,899,505 - Radosavljevic , et al. February 20, 2 | 2018-02-20 |
High mobility strained channels for fin-based transistors
Grant 9,893,149 - Cea , et al. February 13, 2 | 2018-02-13 |
Germanium-based quantum well devices
Grant 9,876,014 - Pillarisetty , et al. January 23, 2 | 2018-01-23 |
Selective epitaxially grown III-V materials based devices
Grant 9,853,107 - Metz , et al. December 26, 2 | 2017-12-26 |
Transistor structure with variable clad/core dimension for stress and bandgap
Grant 9,818,870 - Rachmady , et al. November 14, 2 | 2017-11-14 |
Strain compensation in transistors
Grant 9,818,884 - Le , et al. November 14, 2 | 2017-11-14 |
Techniques and configurations for stacking transistors of an integrated circuit device
Grant 9,812,574 - Pillarisetty , et al. November 7, 2 | 2017-11-07 |
Forming a non-planar transistor having a quantum well channel
Grant 9,806,180 - Chui , et al. October 31, 2 | 2017-10-31 |
Stress in trigate devices using complimentary gate fill materials
Grant 9,806,193 - Rakshit , et al. October 31, 2 | 2017-10-31 |
Method for fabricating transistor with thinned channel
Grant 9,806,195 - Brask , et al. October 31, 2 | 2017-10-31 |
Techniques for forming non-planar germanium quantum well devices
Grant 9,799,759 - Pillarisetty , et al. October 24, 2 | 2017-10-24 |
Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same
Grant 9,768,269 - Dewey , et al. September 19, 2 | 2017-09-19 |
III-N material structure for gate-recessed transistors
Grant 9,755,062 - Then , et al. September 5, 2 | 2017-09-05 |
Two-dimensional condensation for uniaxially strained semiconductor fins
Grant 9,711,598 - Kavalieros , et al. July 18, 2 | 2017-07-18 |
Methods of forming hetero-layers with reduced surface roughness and bulk defect density of non-native surfaces and the structures formed thereby
Grant 9,711,591 - Mukherjee , et al. July 18, 2 | 2017-07-18 |
Techniques for forming contacts to quantum well transistors
Grant 9,704,981 - Pillarisetty , et al. July 11, 2 | 2017-07-11 |
Methods and structures to prevent sidewall defects during selective epitaxy
Grant 9,698,013 - Mukherjee , et al. July 4, 2 | 2017-07-04 |
Extreme high mobility CMOS logic
Grant 9,691,856 - Datta , et al. June 27, 2 | 2017-06-27 |
Integrating VLSI-compatible fin structures with selective epitaxial growth and fabricating devices thereon
Grant 9,685,381 - Goel , et al. June 20, 2 | 2017-06-20 |
Non-planar device having uniaxially strained semiconductor body and method of making same
Grant 9,680,013 - Cea , et al. June 13, 2 | 2017-06-13 |
Methods of containing defects for non-silicon device engineering
Grant 9,666,583 - Goel , et al. May 30, 2 | 2017-05-30 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer
Grant 9,640,671 - Pillarisetty , et al. May 2, 2 | 2017-05-02 |
Trench confined epitaxially grown device layer(s)
Grant 9,634,007 - Pillarisetty , et al. April 25, 2 | 2017-04-25 |
Transistors with high concentration of boron doped germanium
Grant 9,627,384 - Murthy , et al. April 18, 2 | 2017-04-18 |
Strain compensation in transistors
Grant 9,614,093 - Le , et al. April 4, 2 | 2017-04-04 |
Semiconductor device having germanium active layer with underlying diffusion barrier layer
Grant 9,608,055 - Rachmady , et al. March 28, 2 | 2017-03-28 |
Semiconductor device with isolated body portion
Grant 9,608,059 - Cappellani , et al. March 28, 2 | 2017-03-28 |
Variable gate width for gate all-around transistors
Grant 9,590,089 - Rachmady , et al. March 7, 2 | 2017-03-07 |
Making a defect free fin based device in lateral epitaxy overgrowth region
Grant 9,583,396 - Goel , et al. February 28, 2 | 2017-02-28 |
Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation
Grant 9,570,614 - Pillarisetty , et al. February 14, 2 | 2017-02-14 |
Extreme high mobility CMOS logic
Grant 9,548,363 - Datta , et al. January 17, 2 | 2017-01-17 |
III-N material structure for gate-recessed transistors
Grant 9,530,878 - Then , et al. December 27, 2 | 2016-12-27 |
Germanium-based quantum well devices
Grant 9,478,635 - Pillarisetty , et al. October 25, 2 | 2016-10-25 |
Stress in trigate devices using complimentary gate fill materials
Grant 9,450,092 - Rakshit , et al. September 20, 2 | 2016-09-20 |
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
Grant 9,443,936 - Majhi , et al. September 13, 2 | 2016-09-13 |
Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processes
Grant 9,437,706 - Mukherjee , et al. September 6, 2 | 2016-09-06 |
Strain inducing semiconductor regions
Grant 9,425,256 - Datta , et al. August 23, 2 | 2016-08-23 |
Two-dimensional condensation for uniaxially strained semiconductor fins
Grant 9,419,140 - Kavalieros , et al. August 16, 2 | 2016-08-16 |
| 