| Patent | Date |
|---|
Field effect transistor having germanium nanorod and method of manufacturing the same
Grant 9,318,573 - Moon , et al. April 19, 2 | 2016-04-19 |
Field Effect Transistor Having Germanium Nanorod And Method Of Manufacturing The Same
App 20130344664 - MOON; Chang-Wook ; et al. | 2013-12-26 |
CMOS transistor using germanium condensation and method of fabricating the same
Grant 8,460,990 - Kim , et al. June 11, 2 | 2013-06-11 |
Cmos Transistor Using Germanium Condensation And Method Of Fabricating The Same
App 20120214282 - KIM; Jun-youn ; et al. | 2012-08-23 |
Germanium silicide layer including vanadium, platinum, and nickel
Grant 8,232,613 - Moon , et al. July 31, 2 | 2012-07-31 |
Methods of fabricating non-volatile memory devices having carbon nanotube layer and passivation layer
Grant 8,193,030 - Moon , et al. June 5, 2 | 2012-06-05 |
Semiconductor device having a metal gate with a low sheet resistance and method of fabricating metal gate of the same
Grant 8,115,264 - Park , et al. February 14, 2 | 2012-02-14 |
Methods of fabricating non-volatile memory devices having carbon nanotube layer and passivation layer
App 20110117735 - Moon; Chang-wook ; et al. | 2011-05-19 |
Method of fabricating Schottky barrier transistor
Grant 7,902,011 - Park , et al. March 8, 2 | 2011-03-08 |
Method of forming a germanium silicide layer, semiconductor device including the germanium silicide layer, and method of manufacturing the semiconductor device
App 20110049587 - Moon; Chang-wook ; et al. | 2011-03-03 |
Nonvolatile memory devices and methods of fabricating the same
Grant 7,884,410 - Moon , et al. February 8, 2 | 2011-02-08 |
Method of forming a germanium silicide layer, semiconductor device including the germanium silicide layer, and method of manufacturing the semiconductor device
Grant 7,863,142 - Moon , et al. January 4, 2 | 2011-01-04 |
Semiconductor device and method of fabricating metal gate of the same
Grant 7,800,186 - Park , et al. September 21, 2 | 2010-09-21 |
Method of fabricating Schottky barrier transistor
App 20100112771 - Park; Sung-ho ; et al. | 2010-05-06 |
Method of fabricating Schottky barrier transistor
Grant 7,674,665 - Park , et al. March 9, 2 | 2010-03-09 |
CMOS transistor using germanium condensation and method of fabricating the same
App 20090261381 - KIM; Jun-Youn ; et al. | 2009-10-22 |
Method of fabricating schottky barrier transistor
App 20090162983 - Park; Sung-ho ; et al. | 2009-06-25 |
Method of forming a germanium silicide layer, semiconductor device including the germanium silicide layer, and method of manufacturing the semiconductor device
App 20090146183 - Moon; Chang-wook ; et al. | 2009-06-11 |
Semiconductor device and method of fabricating metal gate of the same
App 20090065873 - Park; Sung-ho ; et al. | 2009-03-12 |
Semiconductor device and method of fabricating metal gate of the same
App 20090057783 - Park; Sung-ho ; et al. | 2009-03-05 |
Field effect transistor having germanium nanorod and method of manufacturing the same
App 20080272366 - Moon; Chang-wook ; et al. | 2008-11-06 |
Nonvolatile memory devices and methods of fabricating the same
App 20080191261 - Moon; Chang-wook ; et al. | 2008-08-14 |
Method of manufacturing a germanosilicide and a semiconductor device having the germanosilicide
App 20080164533 - Yang; Hyun-Deok ; et al. | 2008-07-10 |
CMOS gates formed by integrating metals having different work functions and having a high-k gate dielectric
Grant 7,176,531 - Xiang , et al. February 13, 2 | 2007-02-13 |
Method for forming a thin, high quality buffer layer in a field effect transistor and related structure
Grant 7,071,051 - Jeon , et al. July 4, 2 | 2006-07-04 |
Semiconductor component and method of manufacture
Grant 7,026,211 - Sugino , et al. April 11, 2 | 2006-04-11 |
Memory cell structure having nitride layer with reduced charge loss and method for fabricating same
Grant 6,992,370 - Kluth , et al. January 31, 2 | 2006-01-31 |
Method for forming a field effect transistor having a high-k gate dielectric
Grant 6,991,990 - Jeon , et al. January 31, 2 | 2006-01-31 |
Treatment of dielectric material to enhance etch rate
Grant 6,905,971 - Tabery , et al. June 14, 2 | 2005-06-14 |
Method for forming polysilicon gate on high-k dielectric and related structure
Grant 6,902,977 - Kluth , et al. June 7, 2 | 2005-06-07 |
Method for integrating a high-k gate dielectric in a transistor fabrication process
App 20050101147 - Labelle, Catherine B. ; et al. | 2005-05-12 |
Method for integrating metals having different work functions to form CMOS gates having a high-k gate dielectric and related structure
Grant 6,872,613 - Xiang , et al. March 29, 2 | 2005-03-29 |
Method For Integrating Metals Having Different Work Functions To Fom Cmos Gates Having A High-k Gate Dielectric And Related Structure
App 20050054149 - Xiang, Qi ; et al. | 2005-03-10 |
Preparation of composite high-K/standard-K dielectrics for semiconductor devices
Grant 6,849,925 - Halliyal , et al. February 1, 2 | 2005-02-01 |
Method for forming a field effect transistor having a high-k gate dielectric and related structure
Grant 6,797,572 - Jeon , et al. September 28, 2 | 2004-09-28 |
Implantation into high-K dielectric material after gate etch to facilitate removal
Grant 6,764,898 - En , et al. July 20, 2 | 2004-07-20 |
Stacked polysilicon layer for boron penetration inhibition
Grant 6,762,454 - Ibok , et al. July 13, 2 | 2004-07-13 |
Interfacial barrier layer in semiconductor devices with high-K gate dielectric material
Grant 6,693,004 - Halliyal , et al. February 17, 2 | 2004-02-17 |
Preparation of composite high-K/standard-K dielectrics for semiconductor devices
Grant 6,645,882 - Halliyal , et al. November 11, 2 | 2003-11-11 |
Integrated process for fabrication of graded composite dielectric material layers for semiconductor devices
Grant 6,586,349 - Jeon , et al. July 1, 2 | 2003-07-01 |
Non-reducing process for deposition of polysilicon gate electrode over high-K gate dielectric material
Grant 6,451,641 - Halliyal , et al. September 17, 2 | 2002-09-17 |
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