| Patent | Date |
|---|
Multilayered Seed for Perpendicular Magnetic Structure Including an Oxide Layer
App 20220293677 - Wang; Zihui ; et al. | 2022-09-15 |
Magnetic memory element incorporating dual perpendicular enhancement layers
Grant 11,417,836 - Huai , et al. August 16, 2 | 2022-08-16 |
Multilayered seed for perpendicular magnetic structure
Grant 11,348,971 - Wang , et al. May 31, 2 | 2022-05-31 |
Multilayered Seed for Perpendicular Magnetic Structure
App 20210167126 - Wang; Zihui ; et al. | 2021-06-03 |
Magnetic Memory Element Incorporating Dual Perpendicular Enhancement Layers
App 20210159399 - Huai; Yiming ; et al. | 2021-05-27 |
Multilayered seed for perpendicular magnetic structure
Grant 10,950,659 - Wang , et al. March 16, 2 | 2021-03-16 |
Magnetic memory element incorporating perpendicular enhancement layer
Grant 10,910,555 - Wang , et al. February 2, 2 | 2021-02-02 |
Multilayered Seed for Perpendicular Magnetic Structure
App 20200312905 - Wang; Zihui ; et al. | 2020-10-01 |
Magnetic random access memory with perpendicular enhancement layer
Grant 10,727,400 - Wang , et al. | 2020-07-28 |
Multilayered seed structure for magnetic memory element including a CoFeB seed layer
Grant 10,720,469 - Wang , et al. | 2020-07-21 |
Magnetic Memory Element Incorporating Perpendicular Enhancement Layer
App 20200227628 - Wang; Zihui ; et al. | 2020-07-16 |
Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer
Grant RE47,975 - Zhang , et al. | 2020-05-05 |
Multilayered Seed for Magnetic Structure
App 20200043981 - Wang; Zihui ; et al. | 2020-02-06 |
Magnetic memory element including magnesium perpendicular enhancement layer
Grant 10,490,737 - Wang , et al. Nov | 2019-11-26 |
Multilayered seed structure for magnetic memory element including a CoFeB seed layer
Grant 10,438,997 - Wang , et al. O | 2019-10-08 |
Magnetic random access memory with ultrathin reference layer
Grant 10,361,362 - Gan , et al. | 2019-07-23 |
Magnetic memory element with multilayered seed structure
Grant 10,347,691 - Huai , et al. July 9, 2 | 2019-07-09 |
Magnetic Random Access Memory With Perpendicular Enhancement Layer
App 20190198752 - Wang; Zihui ; et al. | 2019-06-27 |
Multilayered Seed for Magnetic Structure
App 20190198566 - Wang; Zihui ; et al. | 2019-06-27 |
Selector Device Incorporating Conductive Clusters for Memory Applications
App 20190172871 - Yang; Hongxin ; et al. | 2019-06-06 |
Memory System Having Thermally Stable Perpendicular Magneto Tunnel Junction (mtj) And A Method Of Manufacturing Same
App 20190148622 - Huai; Yiming ; et al. | 2019-05-16 |
Magnetic Random Access Memory With Perpendicular Enhancement Layer
App 20190013461 - Wang; Zihui ; et al. | 2019-01-10 |
Magnetic Memory Element with Multilayered Seed Structure
App 20190006414 - Huai; Yiming ; et al. | 2019-01-03 |
Magnetic memory element including oxide/metal composite layers formed adjacent to fixed layer
Grant 10,090,456 - Huai , et al. October 2, 2 | 2018-10-02 |
Magnetic memory element with perpendicular enhancement layer
Grant 10,079,338 - Huai , et al. September 18, 2 | 2018-09-18 |
Magnetic structure with multilayered seed
Grant 10,050,083 - Gan , et al. August 14, 2 | 2018-08-14 |
Magnetic memory element with iridium anti-ferromagnetic coupling layer
Grant 10,032,979 - Gan , et al. July 24, 2 | 2018-07-24 |
Perpendicular magnetic fixed layer with high anisotropy
Grant 10,008,663 - Hao , et al. June 26, 2 | 2018-06-26 |
Magnetic Random Access Memory With Ultrathin Reference Layer
App 20180090675 - Gan; Huadong ; et al. | 2018-03-29 |
Magnetic Random Access Memory With Perpendicular Enhancement Layer
App 20180083187 - Huai; Yiming ; et al. | 2018-03-22 |
Magnetic Random Access Memory With Perpendicular Enhancement Layer
App 20180076384 - Gan; Huadong ; et al. | 2018-03-15 |
Magnetic random access memory with ultrathin reference layer
Grant 9,871,191 - Zhou , et al. January 16, 2 | 2018-01-16 |
Magnetic random access memory with ultrathin reference layer
Grant 9,871,190 - Gan , et al. January 16, 2 | 2018-01-16 |
Magnetic Random Access Memory with Multilayered Seed Structure
App 20170352701 - Gan; Huadong ; et al. | 2017-12-07 |
Magnetic memory element with composite fixed layer
Grant 9,831,421 - Wang , et al. November 28, 2 | 2017-11-28 |
Magnetic Random Access Memory With Perpendicular Enhancement Layer
App 20170324027 - Huai; Yiming ; et al. | 2017-11-09 |
Programming of non-volatile memory subjected to high temperature exposure
Grant 9,793,003 - Abedifard , et al. October 17, 2 | 2017-10-17 |
Landing pad in peripheral circuit for magnetic random access memory (MRAM)
Grant 9,793,318 - Satoh , et al. October 17, 2 | 2017-10-17 |
Multilayered seed structure for perpendicular MTJ memory element
Grant 9,793,319 - Gan , et al. October 17, 2 | 2017-10-17 |
Magnetic Random Access Memory With Perpendicular Enhancement Layer
App 20170288137 - Wang; Zihui ; et al. | 2017-10-05 |
Magnetic memory element with composite perpendicular enhancement layer
Grant 9,780,300 - Zhou , et al. October 3, 2 | 2017-10-03 |
Perpendicular magnetic memory element having magnesium oxide cap layer
Grant 9,748,471 - Zhou , et al. August 29, 2 | 2017-08-29 |
Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer
Grant 9,679,625 - Zhang , et al. June 13, 2 | 2017-06-13 |
Magnetic Random Access Memory Having Perpendicular Enhancement Layer
App 20170162781 - Zhou; Yuchen ; et al. | 2017-06-08 |
Magnetic random access memory with perpendicular enhancement layer
Grant 9,647,202 - Gan , et al. May 9, 2 | 2017-05-09 |
Magnetic random access memory with perpendicular interfacial anisotropy
Grant 9,634,244 - Gan , et al. April 25, 2 | 2017-04-25 |
Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer
Grant 9,608,038 - Wang , et al. March 28, 2 | 2017-03-28 |
Magnetic Random Access Memory With Perpendicular Enhancement Layer
App 20170084826 - Zhou; Yuchen ; et al. | 2017-03-23 |
Programming of Non-Volatile Memory Subjected to High Temperature Exposure
App 20170076818 - Abedifard; Ebrahim ; et al. | 2017-03-16 |
Magnetic Random Access Memory With Multilayered Seed Structure
App 20170033156 - Gan; Huadong ; et al. | 2017-02-02 |
Magnetic random access memory element having tantalum perpendicular enhancement layer
Grant 9,559,144 - Gan , et al. January 31, 2 | 2017-01-31 |
Memory device with increased separation between memory elements
Grant 9,548,448 - Satoh , et al. January 17, 2 | 2017-01-17 |
Magnetic tunnel junction with perpendicular enhancement layer and thin reference layer
Grant 9,548,334 - Gan , et al. January 17, 2 | 2017-01-17 |
Magnetic random access memory with tri-layer reference layer
Grant 9,543,506 - Gan , et al. January 10, 2 | 2017-01-10 |
Unipolar-switching perpendicular MRAM and method for using same
Grant 9,502,092 - Zhou , et al. November 22, 2 | 2016-11-22 |
Magnetic random access memory with multilayered seed structure
Grant 9,496,489 - Gan , et al. November 15, 2 | 2016-11-15 |
Perpendicular MRAM with magnet
Grant 9,472,595 - Zhou , et al. October 18, 2 | 2016-10-18 |
Perpendicular MRAM with Magnet
App 20160284761 - Zhou; Yuchen ; et al. | 2016-09-29 |
Magnetic Random Access Memory Having Perpendicular Enhancement Layer
App 20160284762 - Wang; Zihui ; et al. | 2016-09-29 |
Landing Pad in Peripheral Circuit for Magnetic Random Access Memory (MRAM)
App 20160276406 - Satoh; Kimihiro ; et al. | 2016-09-22 |
Magnetic random access memory with nickel/transition metal multilayered seed structure
Grant 9,444,038 - Huai , et al. September 13, 2 | 2016-09-13 |
Voltage-switched magnetic random access memory (MRAM) and method for using the same
Grant 9,443,577 - Wang , et al. September 13, 2 | 2016-09-13 |
Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers
Grant 9,444,039 - Huai , et al. September 13, 2 | 2016-09-13 |
Magnetic random access memory with multilayered seed structure
Grant 9,419,207 - Huai , et al. August 16, 2 | 2016-08-16 |
Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers
Grant 9,419,210 - Huai , et al. August 16, 2 | 2016-08-16 |
Magnetic Random Access Memory With Perpendicular Interfacial Anisotropy
App 20160211443 - Gan; Huadong ; et al. | 2016-07-21 |
Magnetic random access memory having perpendicular composite reference layer
Grant 9,396,781 - Zhou , et al. July 19, 2 | 2016-07-19 |
Magnetic Random Access Memory With Perpendicular Enhancement Layer
App 20160204341 - Gan; Huadong ; et al. | 2016-07-14 |
Spin-transfer Torque Magnetic Random Access Memory With Perpendicular Magnetic Anisotropy Multilayers
App 20160197269 - Huai; Yiming ; et al. | 2016-07-07 |
Unipolar-switching Perpendicular Mram And Method For Using Same
App 20160180908 - Zhou; Yuchen ; et al. | 2016-06-23 |
Landing pad in peripheral circuit for magnetic random access memory (MRAM)
Grant 9,373,663 - Satoh , et al. June 21, 2 | 2016-06-21 |
Method for screening arrays of magnetic memories
Grant 9,349,427 - Zhou , et al. May 24, 2 | 2016-05-24 |
Magnetic random access memory with perpendicular interfacial anisotropy
Grant 9,337,417 - Gan , et al. May 10, 2 | 2016-05-10 |
Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers
Grant 9,318,179 - Huai , et al. April 19, 2 | 2016-04-19 |
Magnetic random access memory with perpendicular enhancement layer
Grant 9,306,154 - Gan , et al. April 5, 2 | 2016-04-05 |
PERPENDICULAR MAGNETIC TUNNEL JUNCTION (pMTJ) WITH IN-PLANE MAGNETO-STATIC SWITCHING-ENHANCING LAYER
App 20160055893 - Zhang; Jing ; et al. | 2016-02-25 |
Devices and methods for measurement of magnetic characteristics of MRAM wafers using magnetoresistive test strips
Grant 9,252,187 - Wang , et al. February 2, 2 | 2016-02-02 |
Perpendicular magnetic random access memory (MRAM) device with reference cell and method for using same
Grant 9,251,879 - Zhou , et al. February 2, 2 | 2016-02-02 |
Magnetic random access memory having perpendicular enhancement layer and interfacial anisotropic free layer
Grant 9,231,027 - Gan , et al. January 5, 2 | 2016-01-05 |
Memory device having stitched arrays of 4 F.sup.2 memory cells
Grant 9,209,390 - Satoh , et al. December 8, 2 | 2015-12-08 |
Magnetic Random Access Memory With Multilayered Seed Structure
App 20150340601 - Huai; Yiming ; et al. | 2015-11-26 |
Magnetic Random Access Memory With Multilayered Seed Structure
App 20150340598 - Gan; Huadong ; et al. | 2015-11-26 |
Magnetic Random Access Memory With Multilayered Seed Structure
App 20150340599 - Huai; Yiming ; et al. | 2015-11-26 |
Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer
Grant 9,196,332 - Zhang , et al. November 24, 2 | 2015-11-24 |
Voltage-switched Magnetic Random Access Memory (mram) And Method For Using The Same
App 20150332748 - Wang; Zihui ; et al. | 2015-11-19 |
Magnetic Random Access Memory With Perpendicular Enhancement Layer
App 20150325783 - Wang; Zihui ; et al. | 2015-11-12 |
Magnetic Random Access Memory With Ultrathin Reference Layer
App 20150311252 - Gan; Huadong ; et al. | 2015-10-29 |
Magnetic Random Access Memory With Ultrathin Reference Layer
App 20150311431 - Zhou; Yuchen ; et al. | 2015-10-29 |
Electric field assisted MRAM and method for using the same
Grant 9,166,146 - Wang , et al. October 20, 2 | 2015-10-20 |
MTJ stack and bottom electrode patterning process with ion beam etching using a single mask
Grant 9,166,154 - Satoh , et al. October 20, 2 | 2015-10-20 |
Magnetic random access memory with multiple free layers
Grant 9,166,143 - Gan , et al. October 20, 2 | 2015-10-20 |
Magnetic Random Access Memory With Perpendicular Enhancement Layer
App 20150287908 - Gan; Huadong ; et al. | 2015-10-08 |
Magnetic Random Access Memory Having Perpendicular Enhancement Layer
App 20150270311 - Gan; Huadong ; et al. | 2015-09-24 |
Perpendicular magnetic random access memory (MRAM) device with a stable reference cell
Grant 9,142,755 - Zhou , et al. September 22, 2 | 2015-09-22 |
Semiconductor memory device having increased separation between memory elements
Grant 9,123,575 - Satoh , et al. September 1, 2 | 2015-09-01 |
MEMORY DEVICE HAVING STITCHED ARRAYS OF 4 F+hu 2 +l MEMORY CELLS
App 20150214278 - Satoh; Kimihiro ; et al. | 2015-07-30 |
Vialess memory structure and method of manufacturing same
Grant 9,082,695 - Satoh , et al. July 14, 2 | 2015-07-14 |
Magnetic random access memory with perpendicular enhancement layer
Grant 9,082,951 - Gan , et al. July 14, 2 | 2015-07-14 |
Perpendicular Sttmram Device With Balanced Reference Layer
App 20150194598 - Huai; Yiming ; et al. | 2015-07-09 |
Spin-transfer Torque Magnetic Random Access Memory With Perpendicular Magnetic Anisotropy Multilayers
App 20150188035 - Huai; Yiming ; et al. | 2015-07-02 |
Spin-transfer Torque Magnetic Random Access Memory With Perpendicular Magnetic Anisotropy Multilayers
App 20150188036 - Huai; Yiming ; et al. | 2015-07-02 |
Shields for magnetic memory chip packages
Grant 9,070,692 - Zhou , et al. June 30, 2 | 2015-06-30 |
Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same
Grant 9,070,464 - Zhou , et al. June 30, 2 | 2015-06-30 |
Magnetic random access memory having perpendicular enhancement layer
Grant 9,070,855 - Gan , et al. June 30, 2 | 2015-06-30 |
Fabrication method for high-density MRAM using thin hard mask
Grant 9,070,869 - Jung , et al. June 30, 2 | 2015-06-30 |
Magnetic Random Access Memory With Perpendicular Enhancement Layer
App 20150171315 - Gan; Huadong ; et al. | 2015-06-18 |
Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same
Grant 9,054,298 - Zhou , et al. June 9, 2 | 2015-06-09 |
Spin-Transfer Torque Magnetic Random Access Memory (STTMRAM) with Perpendicular Laminated Free Layer
App 20150137293 - Huai; Yiming ; et al. | 2015-05-21 |
MTJ manufacturing method utilizing in-situ annealing and etch back
Grant 9,028,910 - Zhou , et al. May 12, 2 | 2015-05-12 |
Initialization method of a perpendicular magnetic random access memory (MRAM) device
Grant 9,030,866 - Zhou , et al. May 12, 2 | 2015-05-12 |
Memory device having stitched arrays of 4 F.sup.2 memory cells
Grant 9,029,824 - Satoh , et al. May 12, 2 | 2015-05-12 |
High density resistive memory having a vertical dual channel transistor
Grant 9,029,822 - Satoh , et al. May 12, 2 | 2015-05-12 |
Initialization Method Of A Perpendicular Magnetic Random Access Memory (mram) Device
App 20150124523 - Zhou; Yuchen ; et al. | 2015-05-07 |
Spin-transfer torque magnetic random access memory (STTMRAM) with perpendicular laminated free layer
Grant 9,025,371 - Huai , et al. May 5, 2 | 2015-05-05 |
Perpendicular STTMRAM device with balanced reference layer
Grant 9,024,398 - Gan , et al. May 5, 2 | 2015-05-05 |
Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers
Grant 9,019,758 - Huai , et al. April 28, 2 | 2015-04-28 |
MRAM with sidewall protection and method of fabrication
Grant 9,013,045 - Satoh , et al. April 21, 2 | 2015-04-21 |
Magnetic Random Access Memory With Perpendicular Interfacial Anisotropy
App 20150102438 - Gan; Huadong ; et al. | 2015-04-16 |
Fabrication Method For High-density Mram Using Thin Hard Mask
App 20150104882 - Jung; Dong Ha ; et al. | 2015-04-16 |
Magnetic Random Access Memory Having Perpendicular Enhancement Layer And Thin Reference Layer
App 20150102441 - Gan; Huadong ; et al. | 2015-04-16 |
Magnetic Random Access Memory With Perpendicular Enhancement Layer
App 20150102439 - Gan; Huadong ; et al. | 2015-04-16 |
Landing Pad In Peripheral Circuit For Magnetic Random Access Memory (mram)
App 20150084140 - Satoh; Kimihiro ; et al. | 2015-03-26 |
Magnetic random access memory with switchable switching assist layer
Grant 8,981,506 - Zhou , et al. March 17, 2 | 2015-03-17 |
Spin-transfer torque magnetic random access memory (STTMRAM) with perpendicular laminated free layer
Grant 8,982,616 - Ranjan , et al. March 17, 2 | 2015-03-17 |
Method for forming MTJ memory element
Grant 8,975,089 - Jung , et al. March 10, 2 | 2015-03-10 |
MRAM etching processes
Grant 8,975,088 - Satoh , et al. March 10, 2 | 2015-03-10 |
Magnetic Random Access Memory With Switable Switching Assist Layer
App 20150061050 - Zhou; Yuchen ; et al. | 2015-03-05 |
Initialization method of a perpendicular magnetic random access memory (MRAM) device
Grant 8,971,100 - Zhou , et al. March 3, 2 | 2015-03-03 |
Method for magnetic screening of arrays of magnetic memories
Grant 8,942,032 - Zhou , et al. January 27, 2 | 2015-01-27 |
Redeposition Control in MRAM Fabrication Process
App 20150014801 - Satoh; Kimihiro ; et al. | 2015-01-15 |
Mtj Memory Cell With Protection Sleeve And Method For Making Same
App 20150014800 - Satoh; Kimihiro ; et al. | 2015-01-15 |
MEMORY DEVICE HAVING STITCHED ARRAYS OF 4 F+hu 2 +l MEMORY CELLS
App 20140339626 - Satoh; Kimihiro ; et al. | 2014-11-20 |
Memory device having vertical selection transistors with shared channel structure and method for making the same
Grant 8,890,108 - Satoh , et al. November 18, 2 | 2014-11-18 |
Magnetoresistive logic cell and method of use
Grant 8,891,291 - Zhou , et al. November 18, 2 | 2014-11-18 |
Magnetoresistive layer structure with voltage-induced switching and logic cell application
Grant 8,891,292 - Wang , et al. November 18, 2 | 2014-11-18 |
Redeposition control in MRAM fabrication process
Grant 8,883,520 - Satoh , et al. November 11, 2 | 2014-11-11 |
Magnetoresistive logic cell and method of use
Grant 8,885,395 - Zhou , et al. November 11, 2 | 2014-11-11 |
Initialization Method Of A Perpendicular Magnetic Random Access Memory (mram) Device With A Stable Reference Cell
App 20140328117 - Zhou; Yuchen ; et al. | 2014-11-06 |
Memory device having stitched arrays of 4 F.sup.2 memory cells
Grant 8,878,156 - Satoh , et al. November 4, 2 | 2014-11-04 |
High speed STT-MRAM with orthogonal pinned layer
Grant 8,860,158 - Zhou , et al. October 14, 2 | 2014-10-14 |
Magnetic tunnel junction with non-metallic layer adjacent to free layer
Grant 8,836,061 - Zhou , et al. September 16, 2 | 2014-09-16 |
Devices And Methods For Measurement Of Magnetic Characteristics Of Mram Wafers Using Magnetoresistive Test Strips
App 20140252356 - Wang; Zihui ; et al. | 2014-09-11 |
Initialization method of a perpendicular magnetic random access memory (MRAM) device with a stable reference cell
Grant 8,830,736 - Zhou , et al. September 9, 2 | 2014-09-09 |
Electric Field Assisted Mram And Method For Using The Same
App 20140247653 - Wang; Zihui ; et al. | 2014-09-04 |
Mtj Manufacturing Method Utilizing In-situ Annealing And Etch Back
App 20140248719 - Zhou; Yuchen ; et al. | 2014-09-04 |
Method for bit-error rate testing of resistance-based RAM cells using a reflected signal
Grant 8,806,284 - Wang , et al. August 12, 2 | 2014-08-12 |
MRAM with sidewall protection and method of fabrication
Grant 8,796,795 - Satoh , et al. August 5, 2 | 2014-08-05 |
MRAM with Sidewall Protection and Method of Fabrication
App 20140210103 - Satoh; Kimihiro ; et al. | 2014-07-31 |
Shields For Magnetic Memory Chip Packages
App 20140197505 - Zhou; Yuchen ; et al. | 2014-07-17 |
Spin transfer torque magnetic random access memory (STTMRAM) having graded synthetic free layer
Grant 8,779,537 - Huai , et al. July 15, 2 | 2014-07-15 |
Spin transfer torque magnetic random access memory (STTMRAM) having graded synthetic free layer
Grant 8,772,886 - Huai , et al. July 8, 2 | 2014-07-08 |
MTJ MRAM with stud patterning
Grant 8,772,888 - Jung , et al. July 8, 2 | 2014-07-08 |
Magnetic Random Access Memory Having Perpendicular Enhancement Layer And Interfacial Anisotropic Free Layer
App 20140183608 - Gan; Huadong ; et al. | 2014-07-03 |
STT-MRAM MTJ manufacturing method with in-situ annealing
Grant 8,758,850 - Zhou , et al. June 24, 2 | 2014-06-24 |
Magnetoresistive Layer Structure With Voltage-induced Switching And Logic Cell Application
App 20140169083 - Wang; Zihui ; et al. | 2014-06-19 |
Mtj Stack And Bottom Electrode Patterning Process With Ion Beam Etching Using A Single Mask
App 20140170776 - Satoh; Kimihiro ; et al. | 2014-06-19 |
Magnetic Random Access Memory Having Perpendicular Enhancement Layer
App 20140151827 - Zhou; Yuchen ; et al. | 2014-06-05 |
Memory Device Having Stitched Arrays Of 4 F Memory Cells
App 20140138600 - SATOH; Kimihiro ; et al. | 2014-05-22 |
High Density Resistive Memory Having A Vertical Dual Channel Transistor
App 20140138609 - Satoh; Kimihiro ; et al. | 2014-05-22 |
Method for reading and writing multi-level cells
Grant 8,724,380 - Zhou , et al. May 13, 2 | 2014-05-13 |
Memory device including transistor array with shared plate channel and method for making the same
Grant 8,704,206 - Satoh , et al. April 22, 2 | 2014-04-22 |
Mtj Mram With Stud Patterning
App 20140042567 - Jung; Dong Ha ; et al. | 2014-02-13 |
Magnetic Random Access Memory Having Perpendicular Enhancement Layer
App 20140042571 - Gan; Huadong ; et al. | 2014-02-13 |
Field Effect Transistor Having A Trough Channel
App 20140035069 - Satoh; Kimihiro ; et al. | 2014-02-06 |
Magnetic Random Access Memory With Switching Assist Layer
App 20140027697 - Zhou; Yuchen ; et al. | 2014-01-30 |
Method and apparatus for measuring magnetic parameters of magnetic thin film structures
Grant 8,633,720 - Tudosa , et al. January 21, 2 | 2014-01-21 |
Perpendicular Sttmram Device With Balanced Reference Layer
App 20140015076 - Gan; Huadong ; et al. | 2014-01-16 |
Spin Transfer Torque Magnetic Random Access Memory (sttmram) Having Graded Synthetic Free Layer
App 20140015078 - Huai; Yiming ; et al. | 2014-01-16 |
Method For Screening Arrays Of Magnetic Memories
App 20140010003 - Zhou; Yuchen ; et al. | 2014-01-09 |
Memory System Having Thermally Stable Perpendicular Magneto Tunnel Junction (mtj) And A Method Of Manufacturing Same
App 20140008744 - Huai; Yiming ; et al. | 2014-01-09 |
Redeposition Control in MRAM Fabrication Process
App 20130341801 - Satoh; Kimihiro ; et al. | 2013-12-26 |
Mram Etching Processes
App 20130337582 - Satoh; Kimihiro ; et al. | 2013-12-19 |
Magnetic Tunnel Junction With Non-Metallic Layer Adjacent to Free Layer
App 20130334633 - Zhou; Yuchen ; et al. | 2013-12-19 |
Spin-transfer torque magnetic random access memory (STTMRAM) using a synthetic free layer
Grant 8,611,147 - Ranjan , et al. December 17, 2 | 2013-12-17 |
Magnetic random access memory with field compensating layer and multi-level cell
Grant 8,598,576 - Zhou , et al. December 3, 2 | 2013-12-03 |
Method for Magnetic Screening of Arrays of Magnetic Memories
App 20130314982 - Zhou; Yuchen ; et al. | 2013-11-28 |
Method for Bit-Error Rate Testing of Resistance-based RAM Cells Using a Reflected Signal
App 20130294144 - Wang; Zihui ; et al. | 2013-11-07 |
Perpendicular Magnetic Random Access Memory (mram) Device With A Stable Reference Cell
App 20130292785 - Zhou; Yuchen ; et al. | 2013-11-07 |
MRAM fabrication method with sidewall cleaning
Grant 8,574,928 - Satoh , et al. November 5, 2 | 2013-11-05 |
Resistive memory device having vertical transistors and method for making the same
Grant 8,575,584 - Satoh , et al. November 5, 2 | 2013-11-05 |
Magnetic Random Access Memory With Field Compensating Layer And Multi-level Cell
App 20130286723 - Zhou; Yuchen ; et al. | 2013-10-31 |
Magnetic random access memory with field compensating layer and multi-level cell
Grant 8,565,010 - Zhou , et al. October 22, 2 | 2013-10-22 |
Perpendicular magnetic random access memory (MRAM) device with a stable reference cell
Grant 8,559,215 - Zhou , et al. October 15, 2 | 2013-10-15 |
MRAM Fabrication Method with Sidewall Cleaning
App 20130267042 - Satoh; Kimihiro ; et al. | 2013-10-10 |
Method for magnetic screening of arrays of magnetic memories
Grant 8,553,452 - Zhou , et al. October 8, 2 | 2013-10-08 |
Method for manufacturing magnetic storage device and magnetic storage device
Grant 8,546,151 - Furuta , et al. October 1, 2 | 2013-10-01 |
MRAM etching processes
Grant 8,536,063 - Satoh , et al. September 17, 2 | 2013-09-17 |
Spin-transfer torque magnetic random access memory with multi-layered storage layer
Grant 8,519,496 - Zhou , et al. August 27, 2 | 2013-08-27 |
Magnetoresistive Logic Cell And Method Of Use
App 20130215672 - Zhou; Yuchen ; et al. | 2013-08-22 |
Magnetoresistive Logic Cell And Method Of Use
App 20130215673 - Zhou; Yuchen ; et al. | 2013-08-22 |
Initialization Method Of A Perpendicular Magnetic Random Access Memory (mram) Device
App 20130194863 - Zhou; Yuchen ; et al. | 2013-08-01 |
Magnetic random access memory with switching assist layer
Grant 8,492,860 - Zhou , et al. July 23, 2 | 2013-07-23 |
Magnetic element having low saturation magnetization
Grant 8,476,723 - Nagai , et al. July 2, 2 | 2013-07-02 |
Method For Magnetic Screening Of Arrays Of Magnetic Memories
App 20130148417 - Zhou; Yuchen ; et al. | 2013-06-13 |
Memory Device Including Transistor Array With Shared Plate Channel And Method For Making The Same
App 20130126823 - SATOH; Kimihiro ; et al. | 2013-05-23 |
Memory Device Having Vertical Selection Transistors With Shared Channel Structure And Method For Making The Same
App 20130126819 - Satoh; Kimihiro ; et al. | 2013-05-23 |
Memory System Having Thermally Stable Perpendicular Magneto Tunnel Junction (mtj) And A Method Of Manufacturing Same
App 20130119498 - Huai; Yiming ; et al. | 2013-05-16 |
Method For Fabrication Of A Magnetic Random Access Memory (mram) Using A High Selectivity Hard Mask
App 20130075840 - Satoh; Kimihiro ; et al. | 2013-03-28 |
Magnetic Random Access Memory (mram) With Enhanced Magnetic Stiffness And Method Of Making Same
App 20130071954 - Zhou; Yuchen ; et al. | 2013-03-21 |
Resistive Memory Device Having Vertical Transistors And Method For Making The Same
App 20130056698 - Satoh; Kimihiro ; et al. | 2013-03-07 |
Mram etching processes
App 20130052752 - Satoh; Kimihiro ; et al. | 2013-02-28 |
MRAM with sidewall protection and method of fabrication
App 20130032775 - Satoh; Kimihiro ; et al. | 2013-02-07 |
MRAM with sidewall protection and method of fabrication
App 20130032907 - Satoh; Kimihiro ; et al. | 2013-02-07 |
Perpendicular Magnetic Random Access Memory (mram) Device With A Stable Reference Cell
App 20130021841 - Zhou; Yuchen ; et al. | 2013-01-24 |
Initialization Method Of A Perpendicular Magnetic Random Access Memory (mram) Device With A Stable Reference Cell
App 20130021842 - Zhou; Yuchen ; et al. | 2013-01-24 |
Perpendicular Mram With Mtj Including Laminated Magnetic Layers
App 20130001717 - Zhou; Yuchen ; et al. | 2013-01-03 |
Method and apparatus for measuring magnetic parameters of magnetic thin film structures
App 20120326712 - Tudosa; Ioan ; et al. | 2012-12-27 |
Trough channel transistor and methods for making the same
App 20120306005 - Satoh; Kimihiro ; et al. | 2012-12-06 |
Vialess Memory Structure And Method Of Manufacturing Same
App 20120306033 - Satoh; Kimihiro ; et al. | 2012-12-06 |
Magnetic Random Access Memory (mram) With Enhanced Magnetic Stiffness And Method Of Making Same
App 20120295370 - Zhou; Yuchen ; et al. | 2012-11-22 |
PERPENDICULAR MAGNETIC TUNNEL JUNCTION (pMTJ) WITH IN-PLANE MAGNETO-STATIC SWITCHING-ENHANCING LAYER
App 20120280339 - Zhang; Jing ; et al. | 2012-11-08 |
Magnetic Random Access Memory (mram) With Enhanced Magnetic Stiffness And Method Of Making Same
App 20120264234 - Zhou; Yuchen ; et al. | 2012-10-18 |
Magnetic Latch Magnetic Random Access Memory (mram)
App 20120217595 - Zhou; Yuchen ; et al. | 2012-08-30 |
Magnetic Random Access Memory With Field Compensating Layer And Multi-level Cell
App 20120206958 - Zhou; Yuchen ; et al. | 2012-08-16 |
Magnetic Random Access Memory With Field Compensating Layer And Multi-level Cell
App 20120205760 - Zhou; Yuchen ; et al. | 2012-08-16 |
Memory System Having Thermally Stable Perpendicular Magneto Tunnel Junction (mtj) And A Method Of Manufacturing Same
App 20120146167 - Huai; Yiming ; et al. | 2012-06-14 |
Magnetic Latch Magnetic Random Access Memory (mram)
App 20120087185 - Zhou; Yuchen ; et al. | 2012-04-12 |
Spin-transfer Torque Magnetic Random Access Memory With Perpendicular Magnetic Anisotropy Multilayers
App 20120063218 - Huai; Yiming ; et al. | 2012-03-15 |
Spin Transfer Torque Magnetic Random Access Memory (sttmram) Having Graded Synthetic Free Layer
App 20120018823 - Huai; Yiming ; et al. | 2012-01-26 |
Magnetic Element Having Low Saturation Magnetization
App 20110241141 - Nagai; Hide ; et al. | 2011-10-06 |
Magnetic element having low saturation magnetization
Grant 7,982,275 - Nagai , et al. July 19, 2 | 2011-07-19 |
Magnetic device having multilayered free ferromagnetic layer
Grant 7,973,349 - Huai , et al. July 5, 2 | 2011-07-05 |
Spin Transfer Magnetic Element With Free Layers Having High Perpendicular Anisotropy And In-plane Equilibrium Magnetization
App 20110140217 - Nguyen; Paul P. ; et al. | 2011-06-16 |
Magnetic element utilizing free layer engineering
Grant 7,916,433 - Huai , et al. March 29, 2 | 2011-03-29 |
Magnetic storage device with intermediate layers having different sheet resistivities
Grant 7,888,755 - Hosomi , et al. February 15, 2 | 2011-02-15 |
Spin Transfer Magnetic Element With Free Layers Having High Perpendicular Anisotropy And In-plane Equilibrium Magnetization
App 20110012215 - Nguyen; Paul P. ; et al. | 2011-01-20 |
Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
Grant 7,859,034 - Huai , et al. December 28, 2 | 2010-12-28 |
Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier
Grant 7,851,840 - Diao , et al. December 14, 2 | 2010-12-14 |
Spin transfer magnetic element having low saturation magnetization free layers
Grant 7,821,087 - Nguyen , et al. October 26, 2 | 2010-10-26 |
Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plan equilibrium magnetization
Grant 7,821,088 - Nguyen , et al. October 26, 2 | 2010-10-26 |
Method For Manufacturing Magnetic Storage Device And Magnetic Storage Device
App 20100264501 - Furuta; Haruo ; et al. | 2010-10-21 |
Magnetic Element Utilizing Free Layer Engineering
App 20100247967 - Huai; Yiming ; et al. | 2010-09-30 |
Current driven memory cells having enhanced current and enhanced current symmetry
Grant 7,791,931 - Chen , et al. September 7, 2 | 2010-09-07 |
Magnetic device having stabilized free ferromagnetic layer
Grant 7,777,261 - Huai , et al. August 17, 2 | 2010-08-17 |
Magnetic element utilizing free layer engineering
Grant 7,760,474 - Huai , et al. July 20, 2 | 2010-07-20 |
Method and system for providing spin transfer tunneling magnetic memories utilizing non-planar transistors
Grant 7,742,328 - Chen , et al. June 22, 2 | 2010-06-22 |
Method and system for providing field biased magnetic memory devices
Grant 7,738,287 - Diao , et al. June 15, 2 | 2010-06-15 |
Magnetic Devices Having Oxide Antiferromagnetic Layer Next To Free Ferromagnetic Layer
App 20100072524 - Huai; Yiming ; et al. | 2010-03-25 |
Magnetic memories utilizing a magnetic element having an engineered free layer
Grant 7,663,848 - Huai , et al. February 16, 2 | 2010-02-16 |
Method and system for providing a magnetic memory structure utilizing spin transfer
Grant 7,623,369 - Luo , et al. November 24, 2 | 2009-11-24 |
Current Driven Memory Cells Having Enhanced Current And Enhanced Current Symmetry
App 20090213640 - Chen; Eugene Youjun ; et al. | 2009-08-27 |
Magnetic tunnel junction having diffusion stop layer
Grant 7,576,956 - Huai August 18, 2 | 2009-08-18 |
Method And System For Providing Spin Transfer Tunneling Magnetic Memories Utilizing Unidirectional Polarity Selection Devices
App 20090185410 - Huai; Yiming ; et al. | 2009-07-23 |
Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
Grant 7,531,882 - Nguyen , et al. May 12, 2 | 2009-05-12 |
Magnetic elements having a bias field and magnetic memory devices using the magnetic elements
Grant 7,518,835 - Huai , et al. April 14, 2 | 2009-04-14 |
Current driven memory cells having enhanced current and enhanced current symmetry
Grant 7,515,457 - Chen , et al. April 7, 2 | 2009-04-07 |
Magnetic Element Having Low Saturation Magnetization
App 20090050991 - Nagai; Hide ; et al. | 2009-02-26 |
Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
Grant 7,495,303 - Diao , et al. February 24, 2 | 2009-02-24 |
Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements
Grant 7,489,541 - Pakala , et al. February 10, 2 | 2009-02-10 |
Method And System For Providing Spin Transfer Tunneling Magnetic Memories Utilizing Non-planar Transistors
App 20080310213 - Chen; Eugene ; et al. | 2008-12-18 |
Method And System For Providing Field Biased Magnetic Memory Devices
App 20080273380 - Diao; Zhitao ; et al. | 2008-11-06 |
Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density
Grant 7,430,135 - Huai , et al. September 30, 2 | 2008-09-30 |
Spin Transfer Magnetic Element With Free Layers Having High Perpendicular Anisotropy And In-plan Equilibrium Magnetization
App 20080230819 - Nguyen; Paul P. ; et al. | 2008-09-25 |
Current driven memory cells having enhanced current and enhanced current symmetry
App 20080205121 - Chen; Eugene Youjun ; et al. | 2008-08-28 |
Method And System For Providing A Magnetic Memory Structure Utilizing Spin Transfer
App 20080151611 - Luo; Xiao ; et al. | 2008-06-26 |
Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins
Grant 7,379,327 - Chen , et al. May 27, 2 | 2008-05-27 |
Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
Grant 7,369,427 - Diao , et al. May 6, 2 | 2008-05-06 |
Method and system for providing a magnetic memory structure utilizing spin transfer
Grant 7,345,912 - Luo , et al. March 18, 2 | 2008-03-18 |
Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier
App 20080061388 - Diao; Zhitao ; et al. | 2008-03-13 |
Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins
App 20070297223 - Chen; Eugene Youjun ; et al. | 2007-12-27 |
Method and system for providing a magnetic memory structure utilizing spin transfer
App 20070279968 - Luo; Xiao ; et al. | 2007-12-06 |
Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein
Grant 7,289,356 - Diao , et al. October 30, 2 | 2007-10-30 |
On-plug magnetic tunnel junction devices based on spin torque transfer switching
App 20070246787 - Wang; Lien-Chang ; et al. | 2007-10-25 |
Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells
Grant 7,286,395 - Chen , et al. October 23, 2 | 2007-10-23 |
Method for forming a hard bias structure in a magnetoresistive sensor
Grant 7,284,316 - Huai , et al. October 23, 2 | 2007-10-23 |
Stress assisted current driven switching for magnetic memory applications
Grant 7,282,755 - Pakala , et al. October 16, 2 | 2007-10-16 |
Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
Grant 7,272,035 - Chen , et al. September 18, 2 | 2007-09-18 |
Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
Grant 7,272,034 - Chen , et al. September 18, 2 | 2007-09-18 |
Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density
App 20070171694 - Huai; Yiming ; et al. | 2007-07-26 |
Magnetoresistive element having reduced spin transfer induced noise
Grant 7,245,462 - Huai , et al. July 17, 2 | 2007-07-17 |
Spin Transfer Magnetic Element Having Low Saturation Magnetization Free Layers
App 20070159734 - Nguyen; Paul P. ; et al. | 2007-07-12 |
Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements
Grant 7,242,048 - Huai July 10, 2 | 2007-07-10 |
MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements
Grant 7,241,631 - Huai , et al. July 10, 2 | 2007-07-10 |
Spin transfer magnetic element having low saturation magnetization free layers
Grant 7,242,045 - Nguyen , et al. July 10, 2 | 2007-07-10 |
Spin transfer magnetic elements with spin depolarization layers
Grant 7,233,039 - Huai , et al. June 19, 2 | 2007-06-19 |
Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices
Grant 7,230,845 - Wang , et al. June 12, 2 | 2007-06-12 |
Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element
Grant 7,227,773 - Nguyen , et al. June 5, 2 | 2007-06-05 |
Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
App 20070120211 - Diao; Zhitao ; et al. | 2007-05-31 |
Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells
App 20070097730 - Chen; Eugene Youjun ; et al. | 2007-05-03 |
Spin transfer based magnetic storage cells utilizing granular free layers and magnetic memories using such cells
App 20070085068 - Apalkov; Dmytro ; et al. | 2007-04-19 |
Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements
App 20070074317 - Pakala; Mahendra ; et al. | 2007-03-29 |
Spin valve sensor having a nonmagnetic enhancement layer adjacent an ultra thin free layer
Grant 7,196,880 - Anderson , et al. March 27, 2 | 2007-03-27 |
Magnetic device having stabilized free ferromagnetic layer
App 20070063236 - Huai; Yiming ; et al. | 2007-03-22 |
Magnetic device having multilayered free ferromagnetic layer
App 20070063237 - Huai; Yiming ; et al. | 2007-03-22 |
Circuitry for use in current switching a magnetic cell
Grant 7,190,612 - Qian , et al. March 13, 2 | 2007-03-13 |
Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
Grant 7,190,611 - Nguyen , et al. March 13, 2 | 2007-03-13 |
Magnetic elements having improved switching characteristics and magnetic memory devices using the magnetic elements
App 20070019337 - Apalkov; Dmytro ; et al. | 2007-01-25 |
Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements
Grant 7,161,829 - Huai , et al. January 9, 2 | 2007-01-09 |
Magnetic elements having a bias field and magnetic memory devices using the magnetic elements
App 20070002504 - Huai; Yiming ; et al. | 2007-01-04 |
Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein
App 20060279981 - Diao; Zhitao ; et al. | 2006-12-14 |
Spin scattering and heat assisted switching of a magnetic element
Grant 7,126,202 - Huai , et al. October 24, 2 | 2006-10-24 |
Circuitry for use in current switching a magnetic cell
App 20060221676 - Qian; Zhenghong ; et al. | 2006-10-05 |
Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer
Grant 7,110,287 - Huai , et al. September 19, 2 | 2006-09-19 |
Magnetic element utilizing spin transfer and an mram device using the magnetic element
Grant 7,106,624 - Huai , et al. September 12, 2 | 2006-09-12 |
Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements
App 20060192237 - Huai; Yiming | 2006-08-31 |
Re-configurable logic elements using heat assisted magnetic tunneling elements
Grant 7,098,494 - Pakala , et al. August 29, 2 | 2006-08-29 |
MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements
App 20060141640 - Huai; Yiming ; et al. | 2006-06-29 |
Method and system for providing a highly textured magnetoresistance element and magnetic memory
App 20060128038 - Pakala; Mahendra ; et al. | 2006-06-15 |
Spin Scattering And Heat Assisted Switching Of A Magnetic Element
App 20060102969 - Huai; Yiming ; et al. | 2006-05-18 |
Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
App 20060081953 - Nguyen; Paul P. ; et al. | 2006-04-20 |
Method and system for providing a dual spin filter
Grant 7,027,268 - Zhu , et al. April 11, 2 | 2006-04-11 |
Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
App 20060049472 - Diao; Zhitao ; et al. | 2006-03-09 |
Three-terminal magnetostatically coupled spin transfer-based MRAM cell
Grant 7,009,877 - Huai , et al. March 7, 2 | 2006-03-07 |
Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
Grant 6,992,359 - Nguyen , et al. January 31, 2 | 2006-01-31 |
Magnetic tunnel junction having diffusion stop layer
App 20060018057 - Huai; Yiming | 2006-01-26 |
Magnetoresistive sensor with overlapping leads having distributed current
Grant 6,989,972 - Stoev , et al. January 24, 2 | 2006-01-24 |
Magnetic memory element utilizing spin transfer switching and storing multiple bits
Grant 6,985,385 - Nguyen , et al. January 10, 2 | 2006-01-10 |
Re-configurable Logic Elements Using Heat Assisted Magnetic Tunneling Elements
App 20050280058 - Pakala, Mahendra ; et al. | 2005-12-22 |
Perpendicular magnetization magnetic element utilizing spin transfer
Grant 6,967,863 - Huai November 22, 2 | 2005-11-22 |
Spin transfer magnetic elements with spin depolarization layers
App 20050237787 - Huai, Yiming ; et al. | 2005-10-27 |
Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element
Grant 6,958,927 - Nguyen , et al. October 25, 2 | 2005-10-25 |
Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
App 20050201023 - Huai, Yiming ; et al. | 2005-09-15 |
Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
App 20050189574 - Nguyen, Paul P. ; et al. | 2005-09-01 |
Spin transfer magnetic element having low saturation magnetization free layers
App 20050184839 - Nguyen, Paul P. ; et al. | 2005-08-25 |
Perpendicular Magnetization Magnetic Element Utilizing Spin Transfer
App 20050185455 - Huai, Yiming | 2005-08-25 |
Methods for providing a sub .15 micron magnetic memory structure
Grant 6,933,155 - Albert , et al. August 23, 2 | 2005-08-23 |
Magnetoresistive sensor with overlapping lead layers including alpha tantalum and conductive layers
Grant 6,934,129 - Zhang , et al. August 23, 2 | 2005-08-23 |
Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer
App 20050180202 - Huai, Yiming ; et al. | 2005-08-18 |
Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
Grant 6,920,063 - Huai , et al. July 19, 2 | 2005-07-19 |
Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements
App 20050136600 - Huai, Yiming | 2005-06-23 |
Stress assisted current driven switching for magnetic memory applications
App 20050106810 - Pakala, Mahendra ; et al. | 2005-05-19 |
Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element
Grant 6,888,742 - Nguyen , et al. May 3, 2 | 2005-05-03 |
Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements
App 20050063222 - Huai, Yiming ; et al. | 2005-03-24 |
Magnetic memory element utilizing spin transfer switching and storing multiple bits
App 20050045913 - Nguyen, Paul P. ; et al. | 2005-03-03 |
Double winding twin coil for thin-film head writer
Grant 6,861,937 - Feng , et al. March 1, 2 | 2005-03-01 |
Magnetoresistive element having reduced spin transfer induced noise
App 20050041342 - Huai, Yiming ; et al. | 2005-02-24 |
Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
Grant 6,847,547 - Albert , et al. January 25, 2 | 2005-01-25 |
Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
Grant 6,838,740 - Huai , et al. January 4, 2 | 2005-01-04 |
Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
Grant 6,829,161 - Huai , et al. December 7, 2 | 2004-12-07 |
Methos For Providing A Sub .15 Micron Magnetic Memory Structure
App 20040235201 - Albert, Frank ; et al. | 2004-11-25 |
Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
App 20040170055 - Albert, Frank ; et al. | 2004-09-02 |
Method of making a magnetic head with aligned pole tips
Grant 6,775,902 - Huai , et al. August 17, 2 | 2004-08-17 |
Magnetostatically Coupled Magnetic Elements Utilizing Spin Transfer And An Mram Device Using The Magnetic Element
App 20040136231 - Huai, Yiming ; et al. | 2004-07-15 |
Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
App 20040130936 - Nguyen, Paul P. ; et al. | 2004-07-08 |
Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
App 20040130940 - Huai, Yiming ; et al. | 2004-07-08 |
Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
App 20040061154 - Huai, Yiming ; et al. | 2004-04-01 |
Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
Grant 6,714,444 - Huai , et al. March 30, 2 | 2004-03-30 |
Magnetic Element Utilizing Spin Transfer And An Mram Device Using The Magnetic Element
App 20040027853 - Huai, Yiming ; et al. | 2004-02-12 |
Top spin valve with improved seed layer
Grant 6,687,098 - Huai February 3, 2 | 2004-02-03 |
Method and system for reducing assymetry in a spin valve having a synthetic pinned layer
Grant 6,447,935 - Zhang , et al. September 10, 2 | 2002-09-10 |
Method And System For Reducing Assymetry In A Spin Valve Having A Synthetic Pinned Layer
App 20020090533 - ZHANG, JING ; et al. | 2002-07-11 |
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