| Patent | Date |
|---|
Method for a GaN vertical microcavity surface emitting laser (VCSEL)
Grant 11,095,096 - Han , et al. August 17, 2 | 2021-08-17 |
Method for GaN vertical microcavity surface emitting laser (VCSEL)
Grant 11,043,792 - Han , et al. June 22, 2 | 2021-06-22 |
Method to make buried, highly conductive p-type III-nitride layers
Grant 11,018,231 - Han , et al. May 25, 2 | 2021-05-25 |
Stacking fault-free semipolar and nonpolar GaN grown on foreign substrates by eliminating the nitrogen polar facets during the growth
Grant 10,896,818 - Han , et al. January 19, 2 | 2021-01-19 |
Semipolar or nonpolar group III-nitride substrates
Grant 10,892,159 - Song , et al. January 12, 2 | 2021-01-12 |
Nanoporous Micro-led Devices And Methods For Making
App 20200152841 - Han; Jung ; et al. | 2020-05-14 |
Method and device concerning III-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layer
Grant 10,554,017 - Han , et al. Fe | 2020-02-04 |
Conductivity based on selective etch for GaN devices and applications thereof
Grant 10,458,038 - Zhang , et al. Oc | 2019-10-29 |
Heterogeneous material integration through guided lateral growth
Grant 10,435,812 - Han O | 2019-10-08 |
Stacking Fault-free Semipolar And Nonpolar Gan Grown On Foreign Substrates By Eliminating The Nitrogen Polar Facets During The G
App 20190228969 - Han; Jung ; et al. | 2019-07-25 |
Semipolar Amd Nonpolar Light-emitting Devices
App 20190157069 - Song; Jie ; et al. | 2019-05-23 |
Stacking-fault-free Semipolar Or Nonpolar Group Iii-nitride Substrates
App 20190157068 - Song; Jie ; et al. | 2019-05-23 |
Cosmetic Dispenser With Piston Action
App 20190029395 - PORTER; KRISTOPHER ; et al. | 2019-01-31 |
High voltage MOS structure and its manufacturing method
Grant 10,141,398 - Tsai , et al. Nov | 2018-11-27 |
Production of expanded nuts
Grant 9,999,242 - Nunez , et al. June 19, 2 | 2018-06-19 |
A Method And Device Concerning Iii-nitride Edge Emitting Laser Diode Of High Confinement Factor With Lattice Matched Cladding Layer
App 20180152003 - Han; Jung ; et al. | 2018-05-31 |
Nitrogen-polar semipolar and gallium-polar semipolar GaN layers and devices on sapphire substrates
Grant 9,978,589 - Han , et al. May 22, 2 | 2018-05-22 |
Method of obtaining planar semipolar gallium nitride surfaces
Grant 9,978,845 - Han , et al. May 22, 2 | 2018-05-22 |
A Method For Gan Vertical Microcavity Surface Emitting Laser (vcsel)
App 20170237234 - Han; Jung ; et al. | 2017-08-17 |
Large-area, laterally-grown epitaxial semiconductor layers
Grant 9,711,352 - Han , et al. July 18, 2 | 2017-07-18 |
Lateral Electrochemical Etching Of Iii-nitride Materials For Microfabrication
App 20170133826 - HAN; JUNG | 2017-05-11 |
Lateral electrochemical etching of III-nitride materials for microfabrication
Grant 9,583,353 - Han February 28, 2 | 2017-02-28 |
Nitrogen-polar Semipolar Gan Layers And Devices On Sapphire Substrates
App 20170047220 - Han; Jung ; et al. | 2017-02-16 |
Method Of Obtaining Planar Semipolar Gallium Nitride Surfaces
App 20170033186 - Han; Jung ; et al. | 2017-02-02 |
Production of Expanded Nuts
App 20160331018 - NUNEZ; Daniel Vera ; et al. | 2016-11-17 |
Method To Make Buried, Highly Conductive P-type Iii-nitride Layers
App 20160197151 - Han; Jung ; et al. | 2016-07-07 |
Conductivity Based On Selective Etch For Gan Devices And Applications Thereof
App 20160153113 - Zhang; Yu ; et al. | 2016-06-02 |
Large-area, Laterally-grown Epitaxial Semiconductor Layers
App 20160027636 - HAN; Jung ; et al. | 2016-01-28 |
Heterogeneous Material Integration Through Guided Lateral Growth
App 20160017515 - Han; Jung | 2016-01-21 |
Conductivity based on selective etch for GaN devices and applications thereof
Grant 9,206,524 - Zhang , et al. December 8, 2 | 2015-12-08 |
Method For A Gan Vertical Microcavity Surface Emitting Laser (vcsel)
App 20150303655 - Han; Jung ; et al. | 2015-10-22 |
Lateral Electrochemical Etching Of Iii-nitride Materials For Microfabrication
App 20140003458 - Han; Jung | 2014-01-02 |
Conductivity Based on Selective Etch for GaN Devices and Applications Thereof
App 20130011656 - Zhang; Yu ; et al. | 2013-01-10 |
Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition
Grant 7,407,872 - Han , et al. August 5, 2 | 2008-08-05 |
Controlled growth of gallium nitride nanostructures
App 20070281481 - Pfefferle; Lisa ; et al. | 2007-12-06 |
Controlled growth of gallium nitride nanostructures
Grant 7,258,807 - Pfefferle , et al. August 21, 2 | 2007-08-21 |
Epitaxial growth of aligned algainn nanowires by metal-organic chemical vapor deposition
App 20060073680 - Han; Jung ; et al. | 2006-04-06 |
Controlled growth of gallium nitride nanostructures
App 20050176249 - Pfefferle, Lisa ; et al. | 2005-08-11 |
Distributed bragg reflector using AIGaN/GaN
Grant 6,775,314 - Waldrip , et al. August 10, 2 | 2004-08-10 |
Cantilever epitaxial process
Grant 6,599,362 - Ashby , et al. July 29, 2 | 2003-07-29 |
Cantilever epitaxial process
App 20020090816 - Ashby, Carol I. ; et al. | 2002-07-11 |
Group II-VI compound semiconductor light emitting devices and an ohmic contact therefor
Grant 5,610,413 - Fan , et al. March 11, 1 | 1997-03-11 |
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