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Gate-all-around FETs having uniform threshold voltage Grant 11,456,219 - Bao , et al. September 27, 2 | 2022-09-27 |
Interconnects On Multiple Sides Of A Semiconductor Structure App 20220285259 - Wang; Junli ;   et al. | 2022-09-08 |
Contact Resistance Reduction In Nanosheet Device Structure App 20220181439 - Wu; Heng ;   et al. | 2022-06-09 |
Contact resistance reduction in nanosheet device structure Grant 11,289,573 - Wu , et al. March 29, 2 | 2022-03-29 |
Anomaly detection using image-based physical characterization Grant 11,282,186 - Guo , et al. March 22, 2 | 2022-03-22 |
Stacked gate structures Grant 11,282,838 - Zhang , et al. March 22, 2 | 2022-03-22 |
Forming A Sacrificial Liner For Dual Channel Devices App 20220069118 - Bu; Huiming ;   et al. | 2022-03-03 |
Stacked Field Effect Transistor With Wrap-around Contacts App 20220052047 - Xie; Ruilong ;   et al. | 2022-02-17 |
Nanosheet transistor with asymmetric gate stack Grant 11,251,288 - Xie , et al. February 15, 2 | 2022-02-15 |
Nanosheet Transistor With Asymmetric Gate Stack App 20220045193 - Xie; Ruilong ;   et al. | 2022-02-10 |
Stacked Gate Structures App 20220013521 - Zhang; Chen ;   et al. | 2022-01-13 |
Stacked field effect transistor with wrap-around contacts Grant 11,201,153 - Xie , et al. December 14, 2 | 2021-12-14 |
Forming a sacrificial liner for dual channel devices Grant 11,189,729 - Bu , et al. November 30, 2 | 2021-11-30 |
Nanosheet Transistor With Asymmetric Gate Stack App 20210359103 - Xie; Ruilong ;   et al. | 2021-11-18 |
Self-aligned gate contact compatible cross couple contact formation Grant 11,164,782 - Xie , et al. November 2, 2 | 2021-11-02 |
Stacked Field Effect Transistor With Wrap-around Contacts App 20210265348 - Xie; Ruilong ;   et al. | 2021-08-26 |
Forming a sacrificial liner for dual channel devices Grant 11,094,824 - Bu , et al. August 17, 2 | 2021-08-17 |
Stacked field effect transistors with reduced coupling effect Grant 11,069,684 - Xie , et al. July 20, 2 | 2021-07-20 |
Self-aligned Gate Contact Compatible Cross Couple Contact Formation App 20210210384 - Xie; Ruilong ;   et al. | 2021-07-08 |
Static Random-access Memory Cell Design App 20210166754 - Yu; Lan ;   et al. | 2021-06-03 |
Static random-access memory cell design Grant 11,024,369 - Yu , et al. June 1, 2 | 2021-06-01 |
Static Random-access Memory Cell Design App 20210151096 - Yu; Lan ;   et al. | 2021-05-20 |
Semiconductor structure including first FinFET devices for low power applications and second FinFET devices for high power applications Grant 11,011,517 - Yu , et al. May 18, 2 | 2021-05-18 |
Self-aligned Metal Gate With Poly Silicide For Vertical Transport Field-effect Transistors App 20210118881 - Anderson; Brent A. ;   et al. | 2021-04-22 |
Oxygen-free Replacment Liner For Improved Transistor Performance App 20210111068 - Wu; Heng ;   et al. | 2021-04-15 |
Oxygen-free replacement liner for improved transistor performance Grant 10,971,399 - Wu , et al. April 6, 2 | 2021-04-06 |
Interface charge reduction for SiGe surface Grant 10,971,626 - Sadana , et al. April 6, 2 | 2021-04-06 |
Self-aligned metal gate with poly silicide for vertical transport field-effect transistors Grant 10,957,696 - Anderson , et al. March 23, 2 | 2021-03-23 |
Gate to source/drain leakage reduction in nanosheet transistors via inner spacer optimization Grant 10,943,989 - Wu , et al. March 9, 2 | 2021-03-09 |
Gate stack designs for analog and logic devices in dual channel Si/SiGe CMOS Grant 10,937,648 - Lee , et al. March 2, 2 | 2021-03-02 |
Semiconductor device with mitigated local layout effects Grant 10,892,181 - Zhou , et al. January 12, 2 | 2021-01-12 |
Source and drain contact cut last process to enable wrap-around-contact Grant 10,840,345 - Greene , et al. November 17, 2 | 2020-11-17 |
Leakage Control For Gate-all-around Field-effect Transistor Devices App 20200343372 - Yu; Lan ;   et al. | 2020-10-29 |
Semiconductor device having two-part spacer Grant 10,804,368 - Bao , et al. October 13, 2 | 2020-10-13 |
Leakage control for gate-all-around field-effect transistor devices Grant 10,797,163 - Yu , et al. October 6, 2 | 2020-10-06 |
Gate To Source/drain Leakage Reduction In Nanosheet Transistors Via Inner Spacer Optimization App 20200287021 - Wu; Heng ;   et al. | 2020-09-10 |
Contact Resistance Reduction In Nanosheet Device Structure App 20200279918 - Wu; Heng ;   et al. | 2020-09-03 |
Gate-all-around Fets Having Uniform Threshold Voltage App 20200243399 - BAO; RUQIANG ;   et al. | 2020-07-30 |
Oxygen-free Replacement Liner For Improved Transistor Performance App 20200235008 - Wu; Heng ;   et al. | 2020-07-23 |
Anomaly Detection Using Image-based Physical Characterization App 20200219247 - Guo; Dechao ;   et al. | 2020-07-09 |
Minimum Width Device For Power Saving App 20200212037 - Yu; Lan ;   et al. | 2020-07-02 |
Method Of Fin Oxidation By Flowable Oxide Fill And Steam Anneal To Mitigate Local Layout Effects App 20200203214 - Zhou; Huimei ;   et al. | 2020-06-25 |
Gate-all-around FETs having uniform threshold voltage Grant 10,692,778 - Bao , et al. | 2020-06-23 |
Fin isolation to mitigate local layout effects Grant 10,685,866 - Zhou , et al. | 2020-06-16 |
Anomaly detection using image-based physical characterization Grant 10,664,966 - Guo , et al. | 2020-05-26 |
Method of fin oxidation by flowable oxide fill and steam anneal to mitigate local layout effects Grant 10,658,224 - Zhou , et al. | 2020-05-19 |
Source And Drain Contact Cut Last Process To Enable Wrap-around-contact App 20200152756 - GREENE; Andrew ;   et al. | 2020-05-14 |
Source And Drain Contact Cut Last Process To Enable Wrap-around-contact App 20200152751 - Greene; Andrew ;   et al. | 2020-05-14 |
Gate Stack Designs for Analog and Logic Devices in Dual Channel Si/SiGe CMOS App 20200144057 - Lee; Choonghyun ;   et al. | 2020-05-07 |
Forming A Sacrificial Liner For Dual Channel Devices App 20200091336 - Bu; Huiming ;   et al. | 2020-03-19 |
Forming a sacrificial liner for dual channel devices Grant 10,593,802 - Bu , et al. | 2020-03-17 |
Fin Isolation To Mitigate Local Layout Effects App 20200083088 - Zhou; Huimei ;   et al. | 2020-03-12 |
Fin Oxidation By Flowable Oxide Fill And Steam Anneal To Mitigate Local Layout Effects App 20200083089 - Zhou; Huimei ;   et al. | 2020-03-12 |
Forming A Sacrificial Liner For Dual Channel Devices App 20200083364 - Bu; Huiming ;   et al. | 2020-03-12 |
Protection of low temperature isolation fill Grant 10,586,700 - Belyansky , et al. | 2020-03-10 |
Preserving channel strain in fin cuts Grant 10,573,646 - Greene , et al. Feb | 2020-02-25 |
Gate-all-around Fets Having Uniform Threshold Voltage App 20200043808 - BAO; Ruqiang ;   et al. | 2020-02-06 |
Semiconductor Device Having Two-part Spacer App 20200035808 - Bao; Ruqiang ;   et al. | 2020-01-30 |
FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation Grant 10,535,773 - Guo , et al. Ja | 2020-01-14 |
Protection of low temperature isolation fill Grant 10,535,550 - Belyansky , et al. Ja | 2020-01-14 |
Gate stack designs for analog and logic devices in dual channel Si/SiGe CMOS Grant 10,535,517 - Lee , et al. Ja | 2020-01-14 |
Forming a sacrificial liner for dual channel devices Grant 10,510,892 - Bu , et al. Dec | 2019-12-17 |
Formation of a semiconductor device with selective nitride grown on conductor Grant 10,468,412 - Bao , et al. No | 2019-11-05 |
Interface Charge Reduction for SiGe Surface App 20190326429 - Sadana; Devendra ;   et al. | 2019-10-24 |
Gate Stack Designs for Analog and Logic Devices in Dual Channel Si/SiGe CMOS App 20190295844 - Lee; Choonghyun ;   et al. | 2019-09-26 |
Interface charge reduction for SiGe surface Grant 10,381,479 - Sadana , et al. A | 2019-08-13 |
Anomaly Detection Using Image-based Physical Characterization App 20190228519 - Guo; Dechao ;   et al. | 2019-07-25 |
Low-drive current FinFET structure for improving circuit density of ratioed logic in SRAM devices Grant 10,361,210 - Basker , et al. | 2019-07-23 |
Replacement metal gate scheme with self-alignment gate for vertical field effect transistors Grant 10,355,106 - Bao , et al. July 16, 2 | 2019-07-16 |
Integrated metal gate CMOS devices Grant 10,332,883 - Bao , et al. | 2019-06-25 |
Forming a sacrificial liner for dual channel devices Grant 10,312,370 - Bu , et al. | 2019-06-04 |
Finfet With Sigma Recessed Source/drain And Un-doped Buffer Layer Epitaxy For Uniform Junction Formation App 20190157457 - Guo; Dechao ;   et al. | 2019-05-23 |
Threshold voltage modulation through channel length adjustment Grant 10,263,098 - Bao , et al. | 2019-04-16 |
Preserving channel strain in fin cuts Grant 10,256,238 - Greene , et al. | 2019-04-09 |
Fabricating Fin-based split-gate high-drain-voltage transistor by work function tuning Grant 10,256,150 - Guo , et al. | 2019-04-09 |
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction Grant 10,249,714 - Guo , et al. | 2019-04-02 |
FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation Grant 10,249,758 - Guo , et al. | 2019-04-02 |
Self-aligned doping in source/drain regions for low contact resistance Grant 10,249,542 - Guo , et al. | 2019-04-02 |
Threshold voltage modulation through channel length adjustment Grant 10,224,419 - Bao , et al. | 2019-03-05 |
Protection Of Low Temperature Isolation Fill App 20190067079 - Belyansky; Michael P. ;   et al. | 2019-02-28 |
Protection Of Low Temperature Isolation Fill App 20190067078 - Belyansky; Michael P. ;   et al. | 2019-02-28 |
Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devices Grant 10,211,207 - Adusumilli , et al. Feb | 2019-02-19 |
Interface Charge Reduction for SiGe Surface App 20190035923 - Sadana; Devendra ;   et al. | 2019-01-31 |
Fabricating fin-based split-gate high-drain-voltage transistor by work function tuning Grant 10,170,368 - Guo , et al. J | 2019-01-01 |
Threshold voltage modulation through channel length adjustment Grant 10,170,593 - Bao , et al. J | 2019-01-01 |
Finfet With Sigma Recessed Source/drain And Un-doped Buffer Layer Epitaxy For Uniform Junction Formation App 20180358465 - Guo; Dechao ;   et al. | 2018-12-13 |
Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devices Grant 10,141,308 - Adusumilli , et al. Nov | 2018-11-27 |
Self-aligned Metal Gate With Poly Silicide For Vertical Transport Field-effect Transistors App 20180331101 - Anderson; Brent A. ;   et al. | 2018-11-15 |
Preserving channel strain in fin cuts Grant 10,128,239 - Greene , et al. November 13, 2 | 2018-11-13 |
Preserving Channel Strain In Fin Cuts App 20180323194 - Greene; Andrew M. ;   et al. | 2018-11-08 |
Preserving Channel Strain In Fin Cuts App 20180323193 - Greene; Andrew M. ;   et al. | 2018-11-08 |
Self-aligned Spacer For Cut-last Transistor Fabrication App 20180323280 - Bao; Ruqiang ;   et al. | 2018-11-08 |
FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation Grant 10,096,713 - Guo , et al. October 9, 2 | 2018-10-09 |
Fabricating Fin-based Split-gate High-drain-voltage Transistor By Work Function Tuning App 20180286760 - Guo; Dechao ;   et al. | 2018-10-04 |
Fabricating Fin-based Split-gate High-drain-voltage Transistor By Work Function Tuning App 20180286761 - Guo; Dechao ;   et al. | 2018-10-04 |
Low Resistance Source/drain Contacts For Complementary Metal Oxide Semiconductor (cmos) Devices App 20180261597 - Adusumilli; Praneet ;   et al. | 2018-09-13 |
Low Resistance Source/drain Contacts For Complementary Metal Oxide Semiconductor (cmos) Devices App 20180261598 - Adusumilli; Praneet ;   et al. | 2018-09-13 |
Replacement Metal Gate Scheme With Self-alignment Gate For Vertical Field Effect Transistors App 20180254330 - Bao; Raqiang ;   et al. | 2018-09-06 |
Self-aligned spacer for cut-last transistor fabrication Grant 10,068,805 - Bao , et al. September 4, 2 | 2018-09-04 |
Modulating transistor performance Grant 10,056,382 - Guo , et al. August 21, 2 | 2018-08-21 |
Silicon nitride fill for PC gap regions to increase cell density Grant 10,056,378 - Guo , et al. August 21, 2 | 2018-08-21 |
Replacement Metal Gate Scheme With Self-alignment Gate For Vertical Field Effect Transistors App 20180226493 - Bao; Raqiang ;   et al. | 2018-08-09 |
Replacement metal gate scheme with self-alignment gate for vertical field effect transistors Grant 10,043,891 - Bao , et al. August 7, 2 | 2018-08-07 |
Self-aligned doping in source/drain regions for low contact resistance Grant 10,032,679 - Guo , et al. July 24, 2 | 2018-07-24 |
Self-aligned Doping In Source/drain Regions For Low Contact Resistance App 20180197792 - Guo; Dechao ;   et al. | 2018-07-12 |
Self-aligned Doping In Source/drain Regions For Low Contact Resistance App 20180197793 - Guo; Dechao ;   et al. | 2018-07-12 |
Self-aligned spacer for cut-last transistor fabrication Grant 10,020,378 - Bao , et al. July 10, 2 | 2018-07-10 |
Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devices Grant 9,978,750 - Adusumilli , et al. May 22, 2 | 2018-05-22 |
Threshold Voltage Modulation Through Channel Length Adjustment App 20180122813 - Bao; Ruqiang ;   et al. | 2018-05-03 |
Replacement metal gate scheme with self-alignment gate for vertical field effect transistors Grant 9,960,254 - Bao , et al. May 1, 2 | 2018-05-01 |
Modulating Transistor Performance App 20180108661 - Guo; Dechao ;   et al. | 2018-04-19 |
Preserving Channel Strain In Fin Cuts App 20180108655 - Greene; Andrew M. ;   et al. | 2018-04-19 |
Integrated metal gate CMOS devices Grant 9,941,282 - Bao , et al. April 10, 2 | 2018-04-10 |
Integrated Metal Gate Cmos Devices App 20180090381 - BAO; Ruqiang ;   et al. | 2018-03-29 |
Forming A Sacrificial Liner For Dual Channel Devices App 20180090604 - Bu; Huiming ;   et al. | 2018-03-29 |
Forming A Sacrificial Liner For Dual Channel Devices App 20180090599 - Bu; Huiming ;   et al. | 2018-03-29 |
Forming A Sacrificial Liner For Dual Channel Devices App 20180090606 - Bu; Huiming ;   et al. | 2018-03-29 |
Threshold Voltage Modulation Through Channel Length Adjustment App 20180083013 - Bao; Ruqiang ;   et al. | 2018-03-22 |
Self-aligned Spacer For Cut-last Transistor Fabrication App 20180082905 - Bao; Ruqiang ;   et al. | 2018-03-22 |
Threshold Voltage Modulation Through Channel Length Adjustment App 20180083017 - Bao; Ruqiang ;   et al. | 2018-03-22 |
Self-aligned Spacer For Cut-last Transistor Fabrication App 20180083120 - Bao; Ruqiang ;   et al. | 2018-03-22 |
Threshold Voltage Modulation Through Channel Length Adjustment App 20180083016 - Bao; Ruqiang ;   et al. | 2018-03-22 |
Threshold Voltage Modulation Through Channel Length Adjustment App 20180083015 - Bao; Ruqiang ;   et al. | 2018-03-22 |
Threshold voltage modulation through channel length adjustment Grant 9,922,983 - Bao , et al. March 20, 2 | 2018-03-20 |
Threshold voltage modulation through channel length adjustment Grant 9,922,984 - Bao , et al. March 20, 2 | 2018-03-20 |
Silicon Nitride Fill For Pc Gap Regions To Increase Cell Density App 20180069002 - Guo; Dechao ;   et al. | 2018-03-08 |
Integrated metal gate CMOS devices Grant 9,899,264 - Bao , et al. February 20, 2 | 2018-02-20 |
Integrated Metal Gate Cmos Devices App 20180005891 - Bao; Ruqiang ;   et al. | 2018-01-04 |
Integrated Metal Gate Cmos Devices App 20180006033 - Bao; Ruqiang ;   et al. | 2018-01-04 |
Silicon nitride fill for PC gap regions to increase cell density Grant 9,859,275 - Guo , et al. January 2, 2 | 2018-01-02 |
Low-drive current FinFET structure for improving circuit density of ratioed logic in SRAM devices Grant 9,859,286 - Basker , et al. January 2, 2 | 2018-01-02 |
Formation Of A Semiconductor Device With Selective Nitride Grown On Conductor App 20170373063 - Bao; Ruqiang ;   et al. | 2017-12-28 |
Partial sacrificial dummy gate with CMOS device with high-k metal gate Grant 9,853,116 - Guo , et al. December 26, 2 | 2017-12-26 |
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction and semiconductor device having reduced junction leakage Grant 9,793,272 - Guo , et al. October 17, 2 | 2017-10-17 |
Method Of Forming Epitaxial Buffer Layer For Finfet Source And Drain Junction Leakage Reduction App 20170294510 - GUO; DECHAO ;   et al. | 2017-10-12 |
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction Grant 9,786,661 - Guo , et al. October 10, 2 | 2017-10-10 |
Forming a sacrificial liner for dual channel devices Grant 9,773,893 - Bu , et al. September 26, 2 | 2017-09-26 |
FinFET having controlled dielectric region height Grant 9,768,027 - Guo , et al. September 19, 2 | 2017-09-19 |
Cutting fins and gates in CMOS devices Grant 9,721,848 - Bu , et al. August 1, 2 | 2017-08-01 |
Self-aligned spacer for cut-last transistor fabrication Grant 9,704,754 - Bao , et al. July 11, 2 | 2017-07-11 |
Light emitting diode (LED) using carbon materials Grant 9,647,169 - Guo , et al. May 9, 2 | 2017-05-09 |
Structure and method to form passive devices in ETSOI process flow Grant 9,570,466 - Cai , et al. February 14, 2 | 2017-02-14 |
Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion Grant 9,484,402 - Cai , et al. November 1, 2 | 2016-11-01 |
Finfet Having Controlled Dielectric Region Height App 20160314976 - Guo; Dechao ;   et al. | 2016-10-27 |
Self aligned embedded gate carbon transistors Grant 9,472,640 - Guo , et al. October 18, 2 | 2016-10-18 |
Method Of Forming Epitaxial Buffer Layer For Finfet Source And Drain Junction Leakage Reduction App 20160284701 - GUO; DECHAO ;   et al. | 2016-09-29 |
Method Of Forming Epitaxial Buffer Layer For Finfet Source And Drain Junction Leakage Reduction App 20160276463 - GUO; DECHAO ;   et al. | 2016-09-22 |
Deposition on a nanowire using atomic layer deposition Grant 9,437,677 - Guo , et al. September 6, 2 | 2016-09-06 |
Finfet Having Controlled Dielectric Region Height App 20160254178 - Guo; Dechao ;   et al. | 2016-09-01 |
Silicon Nitride Fill For Pc Gap Regions To Increase Cell Density App 20160218102 - Guo; Dechao ;   et al. | 2016-07-28 |
Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion Grant 9,397,158 - Cai , et al. July 19, 2 | 2016-07-19 |
Forming wrap-around silicide contact on finFET Grant 9,397,197 - Guo , et al. July 19, 2 | 2016-07-19 |
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction Grant 9,390,976 - Guo , et al. July 12, 2 | 2016-07-12 |
Low-drive Current Finfet Structure For Improving Circuit Density Of Ratioed Logic In Sram Devices App 20160181254 - Basker; Veeraraghavan S. ;   et al. | 2016-06-23 |
Low-drive Current Finfet Structure For Improving Circuit Density Of Ratioed Logic In Sram Devices App 20160181256 - Basker; Veeraraghavan S. ;   et al. | 2016-06-23 |
Replacement gate MOSFET with a high performance gate electrode Grant 9,337,289 - Li , et al. May 10, 2 | 2016-05-10 |
Forming wrap-around silicide contact on finFET Grant 9,318,581 - Guo , et al. April 19, 2 | 2016-04-19 |
Partially-blocked well implant to improve diode ideality with SiGe anode Grant 9,312,358 - Guo , et al. April 12, 2 | 2016-04-12 |
Partial Sacrificial Dummy Gate With Cmos Device With High-k Metal Gate App 20160099332 - Guo; Dechao ;   et al. | 2016-04-07 |
Partial sacrificial dummy gate with CMOS device with high-k metal gate Grant 9,299,795 - Guo , et al. March 29, 2 | 2016-03-29 |
Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels Grant 9,287,399 - Chandra , et al. March 15, 2 | 2016-03-15 |
Partially-blocked well implant to improve diode ideality with SiGe anode Grant 9,252,234 - Guo , et al. February 2, 2 | 2016-02-02 |
Work function adjustment by carbon implant in semiconductor devices including gate structure Grant 9,252,146 - Liang , et al. February 2, 2 | 2016-02-02 |
Graphene sensor Grant 9,250,204 - Guo , et al. February 2, 2 | 2016-02-02 |
Epitaxial Buffer Layer For Finfet Source And Drain Junction Leakage Reduction App 20150318211 - GUO; DECHAO ;   et al. | 2015-11-05 |
FinFET structure and method to adjust threshold voltage in a FinFET structure Grant 9,171,954 - Cartier , et al. October 27, 2 | 2015-10-27 |
Graphene sensor Grant 9,157,887 - Guo , et al. October 13, 2 | 2015-10-13 |
Method to fabricate a vertical transistor having an asymmetric gate with two conductive layers having different work functions Grant 9,142,660 - Guo , et al. September 22, 2 | 2015-09-22 |
Self-Aligned III-V MOSFET Fabrication With In-Situ III-V Epitaxy And In-Situ Metal Epitaxy and Contact Formation App 20150235903 - Guo; Dechao ;   et al. | 2015-08-20 |
Self Aligned Embedded Gate Carbon Transistors App 20150228753 - GUO; DECHAO ;   et al. | 2015-08-13 |
Semiconductor-on-insulator device including stand-alone well implant to provide junction butting Grant 9,105,725 - Guo , et al. August 11, 2 | 2015-08-11 |
Structure and method of T.sub.inv scaling for high k metal gate technology Grant 9,087,784 - Chudzik , et al. July 21, 2 | 2015-07-21 |
Self aligned embedded gate carbon transistors Grant 9,087,811 - Guo , et al. July 21, 2 | 2015-07-21 |
Fabricating Shallow-Trench Isolation Semiconductor Devices To Reduce Or Eliminate Oxygen Diffusion App 20150194334 - Cai; Ming ;   et al. | 2015-07-09 |
Fabricating Shallow-Trench Isolation Semiconductor Devices To Reduce Or Eliminate Oxygen Diffusion App 20150194484 - Cai; Ming ;   et al. | 2015-07-09 |
Stacked Carbon-based Fets App 20150187764 - GUO; DECHAO ;   et al. | 2015-07-02 |
Partial Sacrificial Dummy Gate With Cmos Device With High-k Metal Gate App 20150187897 - Guo; Dechao ;   et al. | 2015-07-02 |
Graphene sensor Grant 9,068,936 - Guo , et al. June 30, 2 | 2015-06-30 |
Self-aligned III-V MOSFET fabrication with in-situ III-V epitaxy and in-situ metal epitaxy and contact formation Grant 9,059,271 - Guo , et al. June 16, 2 | 2015-06-16 |
Semiconductor-on-insulator device including stand-alone well implant to provide junction butting Grant 9,059,291 - Guo , et al. June 16, 2 | 2015-06-16 |
Transistor having replacement metal gate and process for fabricating the same Grant 9,059,091 - Guo , et al. June 16, 2 | 2015-06-16 |
Self-aligned III-V MOSFET fabrication with in-situ III-V epitaxy and in-situ metal epitaxy and contact formation Grant 9,059,272 - Guo , et al. June 16, 2 | 2015-06-16 |
Replacement-gate-compatible programmable electrical antifuse Grant 9,059,006 - Chakravarti , et al. June 16, 2 | 2015-06-16 |
Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion Grant 9,059,244 - Cai , et al. June 16, 2 | 2015-06-16 |
Self aligned embedded gate carbon transistors Grant 9,048,216 - Guo , et al. June 2, 2 | 2015-06-02 |
Threshold voltage adjustment for thin body MOSFETs Grant 9,040,399 - Brodsky , et al. May 26, 2 | 2015-05-26 |
Field effect transistor device with shaped conduction channel Grant 9,041,057 - Guo , et al. May 26, 2 | 2015-05-26 |
Partial sacrificial dummy gate with CMOS device with high-k metal gate Grant 9,041,076 - Guo , et al. May 26, 2 | 2015-05-26 |
Graphene Sensor App 20150137078 - Guo; Dechao ;   et al. | 2015-05-21 |
Replacement Gate Mosfet With A High Performance Gate Electrode App 20150137269 - Li; Zhengwen ;   et al. | 2015-05-21 |
Method and structure for dielectric isolation in a fin field effect transistor Grant 9,034,715 - Wang , et al. May 19, 2 | 2015-05-19 |
Continuously Scalable Width And Height Semiconductor Fins App 20150115365 - Guo; Dechao ;   et al. | 2015-04-30 |
Fabricating Shallow-Trench Isolation Semiconductor Devices To Reduce Or Eliminate Oxygen Diffusion App 20150102453 - Cai; Ming ;   et al. | 2015-04-16 |
Structure and method of T.sub.inv scaling for high k metal gate technology Grant 9,006,837 - Chudzik , et al. April 14, 2 | 2015-04-14 |
Stacked carbon-based FETs Grant 8,994,080 - Guo , et al. March 31, 2 | 2015-03-31 |
Faceted Intrinsic Epitaxial Buffer Layer For Reducing Short Channel Effects While Maximizing Channel Stress Levels App 20150084096 - Chandra; Bhupesh ;   et al. | 2015-03-26 |
Semiconductor-on-insulator Device Including Stand-alone Well Implant To Provide Junction Butting App 20150072481 - Guo; Dechao ;   et al. | 2015-03-12 |
Semiconductor-on-insulator Device Including Stand-alone Well Implant To Provide Junction Butting App 20150069513 - Guo; Dechao ;   et al. | 2015-03-12 |
Light Emitting Diode (LED) Using Carbon Materials App 20150060770 - Guo; Dechao ;   et al. | 2015-03-05 |
Self-aligned contacts Grant 8,969,187 - Guo , et al. March 3, 2 | 2015-03-03 |
Replacement gate MOSFET with a high performance gate electrode Grant 8,969,933 - Li , et al. March 3, 2 | 2015-03-03 |
Finfet Structure And Method To Adjust Threshold Voltage In A Finfet Structure App 20150054093 - CARTIER; Eduard A. ;   et al. | 2015-02-26 |
Transistors with uniaxial stress channels Grant 8,957,464 - Cai , et al. February 17, 2 | 2015-02-17 |
Stacked carbon-based FETs Grant 8,952,431 - Guo , et al. February 10, 2 | 2015-02-10 |
Diffusion sidewall for a semiconductor structure Grant 8,946,853 - Guo , et al. February 3, 2 | 2015-02-03 |
Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels Grant 8,940,595 - Chandra , et al. January 27, 2 | 2015-01-27 |
FinFET structure and method to adjust threshold voltage in a FinFET structure Grant 8,932,949 - Cartier , et al. January 13, 2 | 2015-01-13 |
Structure and method of high-performance extremely thin silicon on insulator complementary metal--oxide--semiconductor transistors with dual stress buried insulators Grant 8,927,364 - Cai , et al. January 6, 2 | 2015-01-06 |
Strained finFET with an electrically isolated channel Grant 8,928,086 - Utomo , et al. January 6, 2 | 2015-01-06 |
Continuously scalable width and height semiconductor fins Grant 8,927,432 - Guo , et al. January 6, 2 | 2015-01-06 |
Structure And Method Of High-performance Extremely Thin Silicon On Insulator Complementary Metal-oxide-semiconductor Transistors With Dual Stress Buried Insulators App 20150001625 - Cai; Ming ;   et al. | 2015-01-01 |
Strained Finfet With An Electrically Isolated Channel App 20140377924 - Utomo; Henry K. ;   et al. | 2014-12-25 |
Light emitting diode (LED) using carbon materials Grant 8,916,405 - Guo , et al. December 23, 2 | 2014-12-23 |
Self-aligned carbon electronics with embedded gate electrode Grant 8,912,098 - Guo , et al. December 16, 2 | 2014-12-16 |
Deposition on a nanowire using atomic layer deposition Grant 8,900,935 - Guo , et al. December 2, 2 | 2014-12-02 |
Scaling of metal gate with aluminum containing metal layer for threshold voltage shift Grant 8,901,674 - Wong , et al. December 2, 2 | 2014-12-02 |
Self-aligned contacts for field effect transistor devices Grant 8,901,626 - Guo , et al. December 2, 2 | 2014-12-02 |
Transistor employing vertically stacked self-aligned carbon nanotubes Grant 8,895,371 - Cao , et al. November 25, 2 | 2014-11-25 |
Graphene based three-dimensional integrated circuit device Grant 8,895,372 - Guo , et al. November 25, 2 | 2014-11-25 |
Stacked Carbon-based Fets App 20140332862 - Guo; Dechao ;   et al. | 2014-11-13 |
Stacked Carbon-based Fets App 20140332860 - Guo; Dechao ;   et al. | 2014-11-13 |
Self Aligned Embedded Gate Carbon Transistors App 20140312412 - GUO; DECHAO ;   et al. | 2014-10-23 |
Self Aligned Embedded Gate Carbon Transistors App 20140312413 - Guo; Dechao ;   et al. | 2014-10-23 |
Vertical transistor having an asymmetric gate Grant 8,866,214 - Guo , et al. October 21, 2 | 2014-10-21 |
Schottky junction si nanowire field-effect bio-sensor/molecule detector Grant 8,859,316 - Guo , et al. October 14, 2 | 2014-10-14 |
Replacement gate electrode with planar work function material layers Grant 8,853,788 - Guo , et al. October 7, 2 | 2014-10-07 |
Method And Structure For Dielectric Isolation In A Fin Field Effect Transistor App 20140264591 - Wang; Yanfeng ;   et al. | 2014-09-18 |
Stress-enhancing Selective Epitaxial Deposition Of Embedded Source And Drain Regions App 20140264444 - Guo; Dechao ;   et al. | 2014-09-18 |
Faceted Intrinsic Epitaxial Buffer Layer For Reducing Short Channel Effects While Maximizing Channel Stress Levels App 20140264558 - Chandra; Bhupesh ;   et al. | 2014-09-18 |
Work Function Adjustment By Carbon Implant In Semiconductor Devices Including Gate Structure App 20140246727 - Liang; Yue ;   et al. | 2014-09-04 |
III-V compound semiconductor material passivation with crystalline interlayer Grant 8,809,860 - Shiu , et al. August 19, 2 | 2014-08-19 |
Method to fabricate multicrystal solar cell with light trapping surface using nanopore copolymer Grant 8,802,482 - Guo , et al. August 12, 2 | 2014-08-12 |
Partial Sacrificial Dummy Gate With Cmos Device With High-k Metal Gate App 20140217481 - Guo; Dechao ;   et al. | 2014-08-07 |
Finfet Structure And Method To Adjust Threshold Voltage In A Finfet Structure App 20140217504 - CARTIER; Eduard A. ;   et al. | 2014-08-07 |
Extremely Thin Semiconductor-On-Insulator Field-Effect Transistor With An Epitaxial Source And Drain Having A Low External Resistance App 20140203363 - Adam; Thomas N. ;   et al. | 2014-07-24 |
Extremely Thin Semiconductor-on-insulator Field-effect Transistor With An Epitaxial Source And Drain Having A Low External Resistance App 20140203361 - Adam; Thomas N. ;   et al. | 2014-07-24 |
Strained Finfet With An Electrically Isolated Channel App 20140191297 - Utomo; Henry K. ;   et al. | 2014-07-10 |
Transistor employing vertically stacked self-aligned carbon nanotubes Grant 8,772,782 - Cao , et al. July 8, 2 | 2014-07-08 |
FinFET structure and method to adjust threshold voltage in a FinFET structure Grant 8,772,149 - Cartier , et al. July 8, 2 | 2014-07-08 |
STRUCTURE AND METHOD OF Tinv SCALING FOR HIGH k METAL GATE TECHNOLOGY App 20140170844 - Chudzik; Michael P. ;   et al. | 2014-06-19 |
FinFET structure having fully silicided fin Grant 8,753,964 - Bryant , et al. June 17, 2 | 2014-06-17 |
Non-volatile Graphene Nanomechanical Switch App 20140154851 - Guo; Dechao ;   et al. | 2014-06-05 |
Non-volatile Graphene Nanomechanical Switch App 20140151786 - Guo; Dechao ;   et al. | 2014-06-05 |
Field effect transistor device and fabrication Grant 8,742,475 - Guo , et al. June 3, 2 | 2014-06-03 |
Non-volatile graphene nanomechanical switch Grant 8,741,700 - Guo , et al. June 3, 2 | 2014-06-03 |
Field effect transistor device and fabrication Grant 8,736,023 - Guo , et al. May 27, 2 | 2014-05-27 |
Non-volatile graphene nanomechanical switch Grant 8,735,947 - Guo , et al. May 27, 2 | 2014-05-27 |
Work function adjustment by carbon implant in semiconductor devices including gate structure Grant 8,729,637 - Liang , et al. May 20, 2 | 2014-05-20 |
Structure and Method to Form Passive Devices in ETSOI Process Flow App 20140131802 - Cai; Ming ;   et al. | 2014-05-15 |
Transistors With Uniaxial Stress Channels App 20140124861 - Cai; Ming ;   et al. | 2014-05-08 |
Implant free extremely thin semiconductor devices Grant 8,710,588 - Cheng , et al. April 29, 2 | 2014-04-29 |
Integration of SMT in replacement gate FINFET process flow Grant 8,697,523 - Cai , et al. April 15, 2 | 2014-04-15 |
Multiple threshold voltages in field effect transistor devices Grant 8,686,514 - Guo , et al. April 1, 2 | 2014-04-01 |
Nanopillar decoupling capacitor Grant 8,680,651 - Chakravarti , et al. March 25, 2 | 2014-03-25 |
Self-aligned carbon electronics with embedded gate electrode Grant 8,680,646 - Guo , et al. March 25, 2 | 2014-03-25 |
PARTIALLY-BLOCKED WELL IMPLANT TO IMPROVE DIODE IDEALITY WITH SiGe ANODE App 20140065807 - Guo; Dechao ;   et al. | 2014-03-06 |
PARTIALLY-BLOCKED WELL IMPLANT TO IMPROVE DIODE IDEALITY WITH SiGe ANODE App 20140061857 - Guo; Dechao ;   et al. | 2014-03-06 |
Embedded stressors for multigate transistor devices Grant 8,659,091 - Cai , et al. February 25, 2 | 2014-02-25 |
Embedded stressors for multigate transistor devices Grant 8,658,505 - Cai , et al. February 25, 2 | 2014-02-25 |
Transistor having replacement metal gate and process for fabricating the same Grant 8,653,602 - Guo , et al. February 18, 2 | 2014-02-18 |
Replacement Gate Electrode With Planar Work Function Material Layers App 20140042561 - Guo; Dechao ;   et al. | 2014-02-13 |
Structure and method to form passive devices in ETSOI process flow Grant 8,648,438 - Cai , et al. February 11, 2 | 2014-02-11 |
Transistor having replacement metal gate and process for fabricating the same App 20140035068 - Guo; Dechao ;   et al. | 2014-02-06 |
Structure and method of T.sub.inv scaling for high .kappa. metal gate technology Grant 8,643,115 - Chudzik , et al. February 4, 2 | 2014-02-04 |
FinFET with fully silicided gate Grant 8,643,120 - Cai , et al. February 4, 2 | 2014-02-04 |
Transistors with uniaxial stress channels Grant 8,633,077 - Cai , et al. January 21, 2 | 2014-01-21 |
Continuously Scalable Width And Height Semiconductor Fins App 20130334602 - Guo; Dechao ;   et al. | 2013-12-19 |
FETs with hybrid channel materials Grant 8,610,172 - Guo , et al. December 17, 2 | 2013-12-17 |
Preventing Fully Silicided Formation In High-k Metal Gate Processing App 20130328135 - Bu; Huiming ;   et al. | 2013-12-12 |
Preventing Fully Silicided Formation In High-k Metal Gate Processing App 20130330899 - Bu; Huiming ;   et al. | 2013-12-12 |
Graphene Sensor App 20130328016 - Guo; Dechao ;   et al. | 2013-12-12 |
Resonance nanoelectromechanical systems Grant 8,605,499 - Chang , et al. December 10, 2 | 2013-12-10 |
Controlling threshold voltage in carbon based field effect transistors Grant 8,598,665 - Frank , et al. December 3, 2 | 2013-12-03 |
Replacement gate MOSFET with a high performance gate electrode Grant 8,592,266 - Li , et al. November 26, 2 | 2013-11-26 |
Self-Aligned III-V MOSFET Fabrication With In-Situ III-V Epitaxy And In-Situ Metal Epitaxy And Contact Formation App 20130307089 - Guo; Dechao ;   et al. | 2013-11-21 |
Self-Aligned III-V MOSFET Fabrication with In-Situ III-V Epitaxy And In-Situ Metal Epitaxy And Contact Formation App 20130309830 - Guo; Dechao ;   et al. | 2013-11-21 |
Fin Field Effect Transistor With Variable Channel Thickness For Threshold Voltage Tuning App 20130285156 - Cai; Ming ;   et al. | 2013-10-31 |
Replacement gate electrode with planar work function material layers Grant 8,569,135 - Guo , et al. October 29, 2 | 2013-10-29 |
Structure And Method Of High-performance Extremely Thin Silicon On Insulator Complementary Metal-oxide-semiconductor Transistors With Dual Stress Buried Insulators App 20130264653 - Cai; Ming ;   et al. | 2013-10-10 |
Schottky FET fabricated with gate last process Grant 8,541,835 - Cai , et al. September 24, 2 | 2013-09-24 |
Self-aligned Carbon Electronics With Embedded Gate Electrode App 20130244386 - GUO; DECHAO ;   et al. | 2013-09-19 |
Multi-gate transistor having sidewall contacts Grant 8,536,651 - Chang , et al. September 17, 2 | 2013-09-17 |
Self-aligned Contacts App 20130230978 - Guo; Dechao ;   et al. | 2013-09-05 |
Transistors With Uniaxial Stress Channels App 20130207194 - Cai; Ming ;   et al. | 2013-08-15 |
Integration of SMT in Replacement Gate FINFET Process Flow App 20130200468 - Cai; Ming ;   et al. | 2013-08-08 |
STRUCTURE AND METHOD OF Tinv SCALING FOR HIGH k METAL GATE TECHNOLOGY App 20130187239 - Chudzik; Michael P. ;   et al. | 2013-07-25 |
Replacement Gate Mosfet With A High Performance Gate Electrode App 20130175641 - Li; Zhengwen ;   et al. | 2013-07-11 |
Finfet With Fully Silicided Gate App 20130175620 - CAI; Ming ;   et al. | 2013-07-11 |
Reduction Of Contact Resistance And Junction Leakage App 20130175632 - CAI; Ming ;   et al. | 2013-07-11 |
Controlling Threshold Voltage In Carbon Based Field Effect Transistors App 20130175633 - Frank; Martin M. ;   et al. | 2013-07-11 |
Finfet With Fully Silicided Gate App 20130178020 - CAI; Ming ;   et al. | 2013-07-11 |
Scaling Of Metal Gate With Aluminum Containing Metal Layer For Threshold Voltage Shift App 20130175642 - Wong; Keith Kwong Hon ;   et al. | 2013-07-11 |
Field Effect Transistor Device And Fabrication App 20130171813 - Guo; Dechao ;   et al. | 2013-07-04 |
Iii-v Compound Semiconductor Material Passivation With Crystalline Interlayer App 20130168834 - Shiu; Kuen-Ting ;   et al. | 2013-07-04 |
Embedded Stressors For Multigate Transistor Devices App 20130154029 - Cai; Ming ;   et al. | 2013-06-20 |
Embedded Stressors For Multigate Transistor Devices App 20130154001 - CAI; MING ;   et al. | 2013-06-20 |
FETs with Hybrid Channel Materials App 20130153964 - Guo; Dechao ;   et al. | 2013-06-20 |
Transistor Employing Vertically Stacked Self-aligned Carbon Nanotubes App 20130126830 - Cao; Qing ;   et al. | 2013-05-23 |
Transistor Employing Vertically Stacked Self-aligned Carbon Nanotubes App 20130130446 - Cao; Qing ;   et al. | 2013-05-23 |
Method to Fabricate Multicrystal Solar Cell with Light Trapping Surface Using Nanopore Copolymer App 20130115732 - Guo; Dechao ;   et al. | 2013-05-09 |
Threshold Voltage Adjustment For Thin Body Mosfets App 20130105894 - Brodsky; MaryJane ;   et al. | 2013-05-02 |
Threshold Voltage Adjustment For Thin Body Mosfets App 20130105896 - Brodsky; MaryJane ;   et al. | 2013-05-02 |
Finfet Structure And Method To Adjust Threshold Voltage In A Finfet Structure App 20130099313 - CARTIER; Eduard A. ;   et al. | 2013-04-25 |
Vertical Transistor Having An Asymmetric Gate App 20130095623 - Guo; Dechao ;   et al. | 2013-04-18 |
Carbon Implant For Workfunction Adjustment In Replacement Gate Transistor App 20130093018 - Guo; Dechao ;   et al. | 2013-04-18 |
Vertical Transistor Having An Asymmetric Gate App 20130093000 - Guo; Dechao ;   et al. | 2013-04-18 |
Carbon Implant For Workfunction Adjustment In Replacement Gate Transistor App 20130093021 - GUO; Dechao ;   et al. | 2013-04-18 |
Work Function Adjustment By Carbon Implant In Semiconductor Devices Including Gate Structure App 20130087859 - Liang; Yue ;   et al. | 2013-04-11 |
Light Emitting Diode (LED) Using Carbon Materials App 20130087759 - Guo; Dechao ;   et al. | 2013-04-11 |
Structure and Method to Form Passive Devices in ETSOI Process Flow App 20130082348 - Cai; Ming ;   et al. | 2013-04-04 |
Implant Free Extremely Thin Semiconductor Devices App 20130056802 - Cheng; Kangguo ;   et al. | 2013-03-07 |
Nanopillar E-Fuse Structure and Process App 20130048988 - Chakravarti; Satya N. ;   et al. | 2013-02-28 |
Single Liner Process to Achieve Dual Stress App 20130029488 - Cai; Ming ;   et al. | 2013-01-31 |
Replacement Gate Electrode With Planar Work Function Material Layers App 20130020658 - Guo; Dechao ;   et al. | 2013-01-24 |
Graphene Sensor App 20120329193 - Guo; Dechao ;   et al. | 2012-12-27 |
Multi-gate Transistor Having Sidewall Contacts App 20120326236 - Chang; Josephine B. ;   et al. | 2012-12-27 |
Self-aligned Carbon Electronics With Embedded Gate Electrode App 20120326228 - GUO; DECHAO ;   et al. | 2012-12-27 |
Deposition On A Nanowire Using Atomic Layer Deposition App 20120326125 - Guo; Dechao ;   et al. | 2012-12-27 |
Adaptive Chuck For Planar Bonding Between Substrates App 20120312452 - Guo; Dechao ;   et al. | 2012-12-13 |
Replacement Gate Electrode With A Tungsten Diffusion Barrier Layer App 20120306026 - Guo; Dechao ;   et al. | 2012-12-06 |
Self-aligned Contacts App 20120299125 - Guo; Dechao ;   et al. | 2012-11-29 |
Multiple Threshold Voltages in Field Effect Transistor Devices App 20120299118 - Guo; Dechao ;   et al. | 2012-11-29 |
Schottky Fet Fabricated With Gate Last Process App 20120299104 - Cai; Jin ;   et al. | 2012-11-29 |
Self-Aligned Contacts in Carbon Devices App 20120292597 - Chang; Josephine B. ;   et al. | 2012-11-22 |
Self-aligned Carbon Electronics With Embedded Gate Electrode App 20120292602 - GUO; DECHAO ;   et al. | 2012-11-22 |
Graphene Based Three-dimensional Integrated Circuit Device App 20120295423 - Guo; Dechao ;   et al. | 2012-11-22 |
Silicon on Insulator Field Effect Device App 20120292701 - Guo; Dechao ;   et al. | 2012-11-22 |
Ultrathin Spacer Formation for Carbon-Based FET App 20110315961A1 - | 2011-12-29 |