| Patent | Date |
|---|
Short Program Verify Recovery With Reduced Programming Disturbance In A Memory Sub-system
App 20220215890 - Chen; Hong-Yan ; et al. | 2022-07-07 |
Three dimensional ferroelectric memory
Grant 11,380,709 - Dong , et al. July 5, 2 | 2022-07-05 |
Detrapping Electrons To Prevent Quick Charge Loss During Program Verify Operations In A Memory Device
App 20220199175 - Lu; Ching-Huang ; et al. | 2022-06-23 |
Distributed Compaction Of Logical States To Reduce Program Time
App 20220189570 - Kavalipurapu; Kalyan Chakravarthy ; et al. | 2022-06-16 |
Short Program Verify Recovery With Reduced Programming Disturbance In A Memory Sub-system
App 20220189565 - Chen; Hong-Yan ; et al. | 2022-06-16 |
Enhanced Gradient Seeding Scheme During A Program Operation In A Memory Sub-system
App 20220189555 - Diep; Vinh Q. ; et al. | 2022-06-16 |
Electronic Devices Comprising Reduced Charge Confinement Regions In Storage Nodes Of Pillars And Related Methods And Systems
App 20220149068 - Liu; Yifen ; et al. | 2022-05-12 |
Apparatus And Methods For Seeding Operations Concurrently With Data Line Set Operations
App 20220130475 - Xu; Jun ; et al. | 2022-04-28 |
Short program verify recovery with reduced programming disturbance in a memory sub-system
Grant 11,282,582 - Chen , et al. March 22, 2 | 2022-03-22 |
Pre-boosting Scheme During A Program Operation In A Memory Sub-system
App 20220051721 - Chen; Hong-Yan ; et al. | 2022-02-17 |
Apparatus and methods for seeding operations concurrently with data line set operations
Grant 11,238,946 - Xu , et al. February 1, 2 | 2022-02-01 |
Short Program Verify Recovery With Reduced Programming Disturbance In A Memory Sub-system
App 20210391024 - Chen; Hong-Yan ; et al. | 2021-12-16 |
Modified Seeding Scheme During A Program Operation In A Memory Sub-system
App 20210391016 - Chen; Hong-Yan ; et al. | 2021-12-16 |
Multi-pass programming process for memory device which omits verify test in first program pass
Grant 11,037,640 - Baraskar , et al. June 15, 2 | 2021-06-15 |
Apparatus And Methods For Seeding Operations Concurrently With Data Line Set Operations
App 20210166773 - Xu; Jun ; et al. | 2021-06-03 |
Three-dimensional inverse flat NAND memory device containing partially discrete charge storage elements and methods of making the same
Grant 10,998,331 - Zhou , et al. May 4, 2 | 2021-05-04 |
Apparatus and methods for seeding operations concurrently with data line set operations
Grant 10,854,304 - Xu , et al. December 1, 2 | 2020-12-01 |
Multi-pass programming process for memory device which omits verify test in first program pass
Grant 10,811,109 - Baraskar , et al. October 20, 2 | 2020-10-20 |
Multi-pass Programming Process For Memory Device Which Omits Verify Test In First Program Pass
App 20200312414 - Baraskar; Ashish ; et al. | 2020-10-01 |
Impedance mismatch mitigation scheme that applies asymmetric voltage pulses to compensate for asymmetries from applying symmetric voltage pulses
Grant 10,755,788 - Rabkin , et al. A | 2020-08-25 |
Reducing neighbor word line interference in a two-tier memory device by modifying word line programming order
Grant 10,748,627 - Chen , et al. A | 2020-08-18 |
Ferroelectric non-volatile memory
Grant 10,734,408 - Dong , et al. | 2020-08-04 |
Multi-pass Programming Process For Memory Device Which Omits Verify Test In First Program Pass
App 20200211663 - Baraskar; Ashish ; et al. | 2020-07-02 |
Reducing Read Disturb In Two-tier Memory Device By Modifying Duration Of Channel Discharge Based On Selected Word Line
App 20200202961 - Chen; Hong-Yan ; et al. | 2020-06-25 |
Reducing Neighbor Word Line Interference In A Two-tier Memory Device By Modifying Word Line Programming Order
App 20200202962 - Chen; Hong-Yan ; et al. | 2020-06-25 |
Reducing read disturb in two-tier memory device by modifying duration of channel discharge based on selected word line
Grant 10,685,723 - Chen , et al. | 2020-06-16 |
Erase operation in 3D NAND flash memory including pathway impedance compensation
Grant 10,650,898 - Rabkin , et al. | 2020-05-12 |
Erase Operation In 3d Nand
App 20200143888 - Rabkin; Peter ; et al. | 2020-05-07 |
Impedance Mismatch Mitigation Scheme
App 20200143889 - Rabkin; Peter ; et al. | 2020-05-07 |
Reducing read disturb in two-tier memory device by modifying ramp up rate of word line voltages during channel discharge
Grant 10,636,500 - Chen , et al. | 2020-04-28 |
Multi-sensing scan for cross-temperature mitigation
Grant 10,636,488 - Lin , et al. | 2020-04-28 |
Three Dimensional Ferroelectric Memory
App 20200075631 - Dong; Yingda ; et al. | 2020-03-05 |
Three-dimensional flat inverse NAND memory device and method of making the same
Grant 10,559,588 - Dong , et al. Feb | 2020-02-11 |
Read bias adjustment for compensating threshold voltage shift due to lateral charge movement
Grant 10,541,035 - Lu , et al. Ja | 2020-01-21 |
Ferroelectric Non-volatile Memory
App 20200020704 - Dong; Yingda ; et al. | 2020-01-16 |
Read Bias Adjustment For Compensating Threshold Voltage Shift Due To Lateral Charge Movement
App 20200005878 - Lu; Ching-Huang ; et al. | 2020-01-02 |
Three-dimensional Inverse Flat Nand Memory Device Containing Partially Discrete Charge Storage Elements And Methods Of Making Th
App 20200006375 - Zhou; Fei ; et al. | 2020-01-02 |
Memory device with vpass step to reduce hot carrier injection type of program disturb
Grant 10,522,232 - Chen , et al. Dec | 2019-12-31 |
Multi-sensing Scan For Cross-temperature Mitigation
App 20190371402 - Lin; Lei ; et al. | 2019-12-05 |
Non-volatile memory with reduced program speed variation
Grant 10,497,711 - Baraskar , et al. De | 2019-12-03 |
Memory Device With Vpass Step To Reduce Hot Carrier Injection Type Of Program Disturb
App 20190355429 - Chen; Hong-Yan ; et al. | 2019-11-21 |
Ferroelectric non-volatile memory
Grant 10,461,095 - Dong , et al. Oc | 2019-10-29 |
Ferroelectric non-volatile memory
Grant 10,453,862 - Dong , et al. Oc | 2019-10-22 |
Ferroelectric non-volatile memory
Grant 10,453,861 - Dong , et al. Oc | 2019-10-22 |
Adjusting voltage on adjacent word line during verify of memory cells on selected word line in multi-pass programming
Grant 10,446,244 - Diep , et al. Oc | 2019-10-15 |
Adjusting Voltage On Adjacent Word Line During Verify Of Memory Cells On Selected Word Line In Multi-pass Programming
App 20190311772 - Diep; Vinh ; et al. | 2019-10-10 |
Reducing program disturb by modifying word line voltages at interface in two-tier stack during programming
Grant 10,438,671 - Chen , et al. O | 2019-10-08 |
Ferroelectric Non-volatile Memory
App 20190304986 - Dong; Yingda ; et al. | 2019-10-03 |
Ferroelectric Non-volatile Memory
App 20190304987 - Dong; Yingda ; et al. | 2019-10-03 |
Ferroelectric Non-volatile Memory
App 20190304988 - Dong; Yingda ; et al. | 2019-10-03 |
Grouping memory cells into sub-blocks for program speed uniformity
Grant 10,431,313 - Zhang , et al. O | 2019-10-01 |
Reducing widening of threshold voltage distributions in a memory device due to temperature change
Grant 10,424,387 - Zhang , et al. Sept | 2019-09-24 |
Three-dimensional memory device including partially surrounding select gates and fringe field assisted programming thereof
Grant 10,373,969 - Zhang , et al. | 2019-08-06 |
Three-dimensional Flat Inverse Nand Memory Device And Method Of Making The Same
App 20190221575 - Dong; Yingda ; et al. | 2019-07-18 |
Three-dimensional memory structure having a back gate electrode
Grant 10,355,007 - Costa , et al. July 16, 2 | 2019-07-16 |
Three-dimensional Memory Device Including Partially Surrounding Select Gates And Fringe Field Assisted Programming Thereof
App 20190214395 - Zhang; Yanli ; et al. | 2019-07-11 |
Reducing disturbs with delayed ramp up of dummy word line after pre-charge during programming
Grant 10,297,323 - Yu , et al. | 2019-05-21 |
NAND boosting using dynamic ramping of word line voltages
Grant 10,297,329 - Rabkin , et al. | 2019-05-21 |
Separate drain-side dummy word lines within a block to reduce program disturb
Grant 10,297,330 - Zhang , et al. | 2019-05-21 |
Reducing Disturbs With Delayed Ramp Up Of Selected Word Line Voltage After Pre-charge During Programming
App 20190147955 - Chen; Hong-Yan ; et al. | 2019-05-16 |
Reducing Program Disturb By Modifying Word Line Voltages At Interface In Two-tier Stack After Program-verify
App 20190147962 - Chen; Hong-Yan ; et al. | 2019-05-16 |
Reducing disturbs with delayed ramp up of selected word line voltage after pre-charge during programming
Grant 10,283,202 - Chen , et al. | 2019-05-07 |
Reducing program disturb by modifying word line voltages at interface in two-tier stack after program-verify
Grant 10,269,435 - Chen , et al. | 2019-04-23 |
Reducing Disturbs With Delayed Ramp Up Of Dummy Word Line After Pre-charge During Programming
App 20190108883 - Yu; Xuehong ; et al. | 2019-04-11 |
Reducing hot electron injection type of read disturb in 3D memory device during signal switching transients
Grant 10,249,372 - Chen , et al. | 2019-04-02 |
Reducing Hot Electron Injection Type Of Read Disturb In 3D Memory Device During Signal Switching Transients
App 20190074062 - Chen; Hong-Yan ; et al. | 2019-03-07 |
Doping channels of edge cells to provide uniform programming speed and reduce read disturb
Grant 10,217,762 - Yu , et al. Feb | 2019-02-26 |
Reducing hot electron injection type of read disturb in 3D memory device having connected source-end select gates
Grant 10,217,518 - Chen , et al. Feb | 2019-02-26 |
Reducing Hot Electron Injection Type Of Read Disturb In 3D Memory Device Having Connected Source-End Select Gates
App 20190057749 - Chen; Hong-Yan ; et al. | 2019-02-21 |
Reducing injection type of read disturb in a cold read of a memory device
Grant 10,210,941 - Chen , et al. Feb | 2019-02-19 |
Non-volatile memory with methods to reduce creep-up field between dummy control gate and select gate
Grant 10,204,689 - Lu , et al. Feb | 2019-02-12 |
Non-volatile Memory With Methods To Reduce Creep-Up Field Between Dummy Control Gate And Select Gate
App 20190035480 - Lu; Ching-Huang ; et al. | 2019-01-31 |
Dynamic tuning of first read countermeasures
Grant 10,157,676 - Pang , et al. Dec | 2018-12-18 |
Separate Drain-Side Dummy Word Lines Within A Block To Reduce Program Disturb
App 20180358102 - Zhang; Zhengyi ; et al. | 2018-12-13 |
Program-verify of select gate transistor with doped channel in NAND string
Grant 10,153,051 - Chen , et al. Dec | 2018-12-11 |
Non-volatile memory with reduced program speed variation
Grant 10,134,479 - Zhang , et al. November 20, 2 | 2018-11-20 |
Select transistors with tight threshold voltage in 3D memory
Grant 10,128,257 - Pang , et al. November 13, 2 | 2018-11-13 |
Reducing charge loss in data memory cell adjacent to dummy memory cell
Grant 10,121,552 - Baraskar , et al. November 6, 2 | 2018-11-06 |
Electric field to reduce select gate threshold voltage shift
Grant 10,115,464 - Lu , et al. October 30, 2 | 2018-10-30 |
Non-volatile Memory With Reduced Program Speed Variation
App 20180308555 - Zhang; Zhengyi ; et al. | 2018-10-25 |
Reducing Charge Loss In Data Memory Cell Adjacent To Dummy Memory Cell
App 20180308556 - Baraskar; Ashish ; et al. | 2018-10-25 |
Doping Channels Of Edge Cells To Provide Uniform Programming Speed And Reduce Read Disturb
App 20180294278 - Yu; Xuehong ; et al. | 2018-10-11 |
Detecting misalignment in memory array and adjusting read and verify timing parameters on sub-block and block levels
Grant 10,068,657 - Yu , et al. September 4, 2 | 2018-09-04 |
Channel pre-charge to suppress disturb of select gate transistors during erase in memory
Grant 10,068,651 - Diep , et al. September 4, 2 | 2018-09-04 |
Grouping Memory Cells Into Sub-blocks For Program Speed Uniformity
App 20180240527 - Zhang; Zhengyi ; et al. | 2018-08-23 |
Detecting Misalignment In Memory Array And Adjusting Read And Verify Timing Parameters On Sub-Block And Block Levels
App 20180233206 - Yu; Xuehong ; et al. | 2018-08-16 |
Sense circuit having bit line clamp transistors with different threshold voltages for selectively boosting current in NAND strings
Grant 10,038,005 - Zhang , et al. July 31, 2 | 2018-07-31 |
Non-volatile memory with customized control of injection type of disturb during program verify for improved program performance
Grant 10,026,487 - Chen , et al. July 17, 2 | 2018-07-17 |
Forming memory cell film in stack opening
Grant 10,020,314 - Baraskar , et al. July 10, 2 | 2018-07-10 |
Select Transistors With Tight Threshold Voltage In 3d Memory
App 20180190667 - Pang; Liang ; et al. | 2018-07-05 |
Programming of dummy memory cell to reduce charge loss in select gate transistor
Grant 10,008,271 - Diep , et al. June 26, 2 | 2018-06-26 |
Block health monitoring using threshold voltage of dummy memory cells
Grant 10,008,277 - Pang , et al. June 26, 2 | 2018-06-26 |
Suppressing disturb of select gate transistors during erase in memory
Grant 9,984,760 - Zhang , et al. May 29, 2 | 2018-05-29 |
Non-volatile Memory With Reduced Program Speed Variation
App 20180122814 - Baraskar; Ashish ; et al. | 2018-05-03 |
Grouping memory cells into sub-blocks for program speed uniformity
Grant 9,959,932 - Zhang , et al. May 1, 2 | 2018-05-01 |
Techniques for programming of select gates in NAND memory
Grant 9,947,407 - Nguyen , et al. April 17, 2 | 2018-04-17 |
Select Transistors With Tight Threshold Voltage In 3d Memory
App 20180102375 - Pang; Liang ; et al. | 2018-04-12 |
Select transistors with tight threshold voltage in 3D memory
Grant 9,941,293 - Pang , et al. April 10, 2 | 2018-04-10 |
Doping channels of edge cells to provide uniform programming speed and reduce read disturb
Grant 9,922,992 - Yu , et al. March 20, 2 | 2018-03-20 |
Temperature dependent erase in non-volatile storage
Grant 9,922,714 - Yu , et al. March 20, 2 | 2018-03-20 |
Reducing select gate injection disturb at the beginning of an erase operation
Grant 9,922,705 - Diep , et al. March 20, 2 | 2018-03-20 |
Block Health Monitoring Using Threshold Voltage Of Dummy Memory Cells
App 20180075919 - Pang; Liang ; et al. | 2018-03-15 |
Dummy voltage to reduce first read effect in memory
Grant 9,911,500 - Pang , et al. March 6, 2 | 2018-03-06 |
Reducing hot electron injection type of read disturb in 3D non-volatile memory for edge word lines
Grant 9,905,305 - Chen , et al. February 27, 2 | 2018-02-27 |
Dummy word line bias ramp rate during programming
Grant 9,887,002 - Zhang , et al. February 6, 2 | 2018-02-06 |
Non-Volatile Memory With Reduced Program Speed Variation
App 20180033794 - Baraskar; Ashish ; et al. | 2018-02-01 |
Amorphous silicon layer in memory device which reduces neighboring word line interference
Grant 9,859,298 - Pang , et al. January 2, 2 | 2018-01-02 |
Amorphous Silicon Layer In Memory Device Which Reduces Neighboring Word Line Interference
App 20170373086 - Pang; Liang ; et al. | 2017-12-28 |
Dummy word line control scheme for non-volatile memory
Grant 9,852,803 - Diep , et al. December 26, 2 | 2017-12-26 |
Dynamic Tuning Of First Read Countermeasures
App 20170365349 - Pang; Liang ; et al. | 2017-12-21 |
Non-volatile Memory With Customized Control Of Injection Type Of Disturb During Program Verify For Improved Program Performance
App 20170352430 - Chen; Hong-Yan ; et al. | 2017-12-07 |
Reducing Neighboring Word Line In Interference Using Low-K Oxide
App 20170345705 - Pang; Liang ; et al. | 2017-11-30 |
Word Line-dependent And Temperature-dependent Erase Depth
App 20170345470 - Pang; Liang ; et al. | 2017-11-30 |
Word line-dependent and temperature-dependent erase depth
Grant 9,830,963 - Pang , et al. November 28, 2 | 2017-11-28 |
Reducing neighboring word line in interference using low-k oxide
Grant 9,831,118 - Pang , et al. November 28, 2 | 2017-11-28 |
Dummy Word Line Control Scheme For Non-volatile Memory
App 20170330631 - Diep; Vinh Quang ; et al. | 2017-11-16 |
Memory hole size variation in a 3D stacked memory
Grant 9,812,462 - Pang , et al. November 7, 2 | 2017-11-07 |
Dummy Voltage To Reduce First Read Effect In Memory
App 20170301403 - Pang; Liang ; et al. | 2017-10-19 |
High conductivity channel for 3D memory
Grant 9,793,283 - Pang , et al. October 17, 2 | 2017-10-17 |
Equalizing erase depth in different blocks of memory cells
Grant 9,786,378 - Zhang , et al. October 10, 2 | 2017-10-10 |
Data recovery method after word line-to-word line short circuit
Grant 9,785,493 - Zhang , et al. October 10, 2 | 2017-10-10 |
Weighted read scrub for nonvolatile memory including memory holes
Grant 9,760,307 - Avila , et al. September 12, 2 | 2017-09-12 |
Techniques For Programming Of Select Gates In NAND Memory
App 20170256317 - Nguyen; Hao ; et al. | 2017-09-07 |
Three dimensional NAND device with channel contacting conductive source line and method of making thereof
Grant 9,748,267 - Zhang , et al. August 29, 2 | 2017-08-29 |
Three-dimensional memory device with select transistor having charge trapping gate dielectric layer and methods of making and operating thereof
Grant 9,748,266 - Baraskar , et al. August 29, 2 | 2017-08-29 |
Non-volatile memory with customized control of injection type of disturb during read operations
Grant 9,747,992 - Chen , et al. August 29, 2 | 2017-08-29 |
Forming 3D memory cells after word line replacement
Grant 9,716,101 - Lu , et al. July 25, 2 | 2017-07-25 |
Dynamic tuning of first read countermeasures
Grant 9,715,937 - Pang , et al. July 25, 2 | 2017-07-25 |
Method of forming memory cell film
Grant 9,673,216 - Baraskar , et al. June 6, 2 | 2017-06-06 |
Alternating refractive index in charge-trapping film in three-dimensional memory
Grant 9,666,593 - Pang , et al. May 30, 2 | 2017-05-30 |
Techniques for programming of select gates in NAND memory
Grant 9,659,656 - Nguyen , et al. May 23, 2 | 2017-05-23 |
Mitigating hot electron program disturb
Grant 9,640,273 - Chen , et al. May 2, 2 | 2017-05-02 |
Word line ramping down scheme to purge residual electrons
Grant 9,620,233 - Dong , et al. April 11, 2 | 2017-04-11 |
Three-dimensional Memory Structure Having A Back Gate Electrode
App 20170098655 - COSTA; Xiying ; et al. | 2017-04-06 |
Weak erase prior to read
Grant 9,607,707 - Pang , et al. March 28, 2 | 2017-03-28 |
Method and apparatus for refresh programming of memory cells based on amount of threshold voltage downshift
Grant 9,595,342 - Pang , et al. March 14, 2 | 2017-03-14 |
NAND Boosting Using Dynamic Ramping of Word Line Voltages
App 20170062068 - Rabkin; Peter ; et al. | 2017-03-02 |
Word line-dependent and temperature-dependent pass voltage during programming
Grant 9,583,198 - Pang , et al. February 28, 2 | 2017-02-28 |
Three-dimensional memory structure having a back gate electrode
Grant 9,576,971 - Zhang , et al. February 21, 2 | 2017-02-21 |
Three-dimensional non-volatile memory device having a silicide source line and method of making thereof
Grant 9,559,117 - Pachamuthu , et al. January 31, 2 | 2017-01-31 |
Neighboring word line program disturb countermeasure for charge-trapping memory
Grant 9,552,251 - Yuan , et al. January 24, 2 | 2017-01-24 |
Three-dimensional memory structure having self-aligned drain regions and methods of making thereof
Grant 9,543,320 - Pang , et al. January 10, 2 | 2017-01-10 |
NAND boosting using dynamic ramping of word line voltages
Grant 9,530,506 - Rabkin , et al. December 27, 2 | 2016-12-27 |
Three-dimensional memory devices having a single layer channel and methods of making thereof
Grant 9,530,785 - Koka , et al. December 27, 2 | 2016-12-27 |
Three Dimensional Nand Device With Channel Contacting Conductive Source Line And Method Of Making Thereof
App 20160372482 - Zhang; Yanli ; et al. | 2016-12-22 |
Reducing Hot Electron Injection Type Of Read Disturb In 3D Non-Volatile Memory For Edge Word Lines
App 20160358662 - Chen; Hong-Yan ; et al. | 2016-12-08 |
Memory Hole Last Boxim
App 20160343718 - Lu; Zhenyu ; et al. | 2016-11-24 |
Selective removal of charge-trapping layer for select gate transistor and dummy memory cells in 3D stacked memory
Grant 9,490,262 - Pang , et al. November 8, 2 | 2016-11-08 |
Selective Removal Of Charge-Trapping Layer For Select Gate Transistor And Dummy Memory Cells In 3D Stacked Memory
App 20160307915 - Pang; Liang ; et al. | 2016-10-20 |
Word line-dependent ramping of pass voltage and program voltage for three-dimensional memory
Grant 9,466,369 - Pang , et al. October 11, 2 | 2016-10-11 |
Compensation for sub-block erase
Grant 9,466,382 - Avila , et al. October 11, 2 | 2016-10-11 |
Temperature Dependent Voltage To Unselected Drain Side Select Transistor During Program Of 3D NAND
App 20160293266 - Chen; Jian ; et al. | 2016-10-06 |
Word line dependent channel pre-charge for memory
Grant 9,460,805 - Pang , et al. October 4, 2 | 2016-10-04 |
Three dimensional NAND device with channel contacting conductive source line and method of making thereof
Grant 9,455,263 - Zhang , et al. September 27, 2 | 2016-09-27 |
Temperature dependent voltage to unselected drain side select transistor during program of 3D NAND
Grant 9,443,605 - Chen , et al. September 13, 2 | 2016-09-13 |
Programming memory with reduced short-term charge loss
Grant 9,437,305 - Lu , et al. September 6, 2 | 2016-09-06 |
Adaptive program pulse duration based on temperature
Grant 9,437,318 - Dong , et al. September 6, 2 | 2016-09-06 |
Program Verify For Non-volatile Storage
App 20160254047 - Sun; Yongke ; et al. | 2016-09-01 |
Reducing hot electron injection type of read disturb in 3D non-volatile memory for edge word lines
Grant 9,412,463 - Chen , et al. August 9, 2 | 2016-08-09 |
Contact for vertical memory with dopant diffusion stopper and associated fabrication method
Grant 9,406,690 - Pang , et al. August 2, 2 | 2016-08-02 |
Selective removal of charge-trapping layer for select gate transistors and dummy memory cells in 3D stacked memory
Grant 9,406,693 - Pang , et al. August 2, 2 | 2016-08-02 |
Charge redistribution during erase in charge trapping memory
Grant 9,406,387 - Yuan , et al. August 2, 2 | 2016-08-02 |
Method of reducing hot electron injection type of read disturb in dummy memory cells
Grant 9,406,391 - Chen , et al. August 2, 2 | 2016-08-02 |
Method Of Reducing Hot Electron Injection Type Of Read Disturb In Dummy Memory Cells
App 20160217865 - Chen; Hong-Yan ; et al. | 2016-07-28 |
Method And Apparatus For Refresh Programming Of Memory Cells Based On Amount Of Threshold Voltage Downshift
App 20160211032 - Pang; Liang ; et al. | 2016-07-21 |
Programming non-volatile storage with fast bit detection and verify skip
Grant RE46,056 - Chen , et al. July 5, 2 | 2016-07-05 |
Techniques For Programming Of Select Gates In Nand Memory
App 20160189778 - NGUYEN; Hao ; et al. | 2016-06-30 |
Method to recover cycling damage and improve long term data retention
Grant 9,378,832 - Lu , et al. June 28, 2 | 2016-06-28 |
Method To Recover Cycling Damage And Improve Long Term Data Retention
App 20160172044 - Lu; Ching-Huang ; et al. | 2016-06-16 |
Contact For Vertical Memory With Dopant Diffusion Stopper And Associated Fabrication Method
App 20160172368 - Pang; Liang ; et al. | 2016-06-16 |
Three-dimensional memory structure having self-aligned drain regions and methods of making thereof
Grant 9,368,509 - Pang , et al. June 14, 2 | 2016-06-14 |
Three-dimensional Memory Structure Having A Back Gate Electrode
App 20160163729 - ZHANG; Yanli ; et al. | 2016-06-09 |
Method of reducing hot electron injection type of read disturb in memory
Grant 9,361,993 - Chen , et al. June 7, 2 | 2016-06-07 |
Data recovery in a 3D memory device with a short circuit between word lines
Grant 9,355,735 - Chen , et al. May 31, 2 | 2016-05-31 |
NAND Boosting Using Dynamic Ramping of Word Line Voltages
App 20160148691 - Rabkin; Peter ; et al. | 2016-05-26 |
Read with look-back combined with programming with asymmetric boosting in memory
Grant 9,349,478 - Yuan , et al. May 24, 2 | 2016-05-24 |
Reduced erase-verify voltage for first-programmed word line in a memory device
Grant 9,343,171 - Sun , et al. May 17, 2 | 2016-05-17 |
Reprogramming memory with single program pulse per data state
Grant 9,343,141 - Pang , et al. May 17, 2 | 2016-05-17 |
Balancing programming speeds of memory cells in a 3D stacked memory
Grant 9,343,156 - Mui , et al. May 17, 2 | 2016-05-17 |
Avoiding unintentional program or erase of a select gate transistor
Grant 9,343,159 - Dong , et al. May 17, 2 | 2016-05-17 |
Look ahead read method for non-volatile memory
Grant 9,336,891 - Yuan , et al. May 10, 2 | 2016-05-10 |
Reducing hot electron injection type of read disturb in 3D non-volatile memory
Grant 9,336,892 - Chen , et al. May 10, 2 | 2016-05-10 |
Detecting programmed word lines based on NAND string current
Grant 9,330,779 - Mui , et al. May 3, 2 | 2016-05-03 |
Adaptive Program Pulse Duration Based On Temperature
App 20160118131 - Dong; Yingda ; et al. | 2016-04-28 |
Deuterium Anneal Of Semiconductor Channels In A Three-dimensional Memory Structure
App 20160118391 - ZHAO; Wei ; et al. | 2016-04-28 |
Multiple pass programming for memory with different program pulse widths
Grant 9,324,419 - Pang , et al. April 26, 2 | 2016-04-26 |
Weak erase after programming to improve data retention in charge-trapping memory
Grant 9,324,439 - Chen , et al. April 26, 2 | 2016-04-26 |
Nonvolatile memory and method for improved programming with reduced verify
Grant 9,324,418 - Dong , et al. April 26, 2 | 2016-04-26 |
Three-dimensional Memory Structure Having Self-aligned Drain Regions And Methods Of Making Thereof
App 20160111435 - Pang; Liang ; et al. | 2016-04-21 |
Three-dimensional Memory Structure Having Self-aligned Drain Regions And Methods Of Making Thereof
App 20160111437 - PANG; Liang ; et al. | 2016-04-21 |
Weak Erase After Programming To Improve Data Retention In Charge-Trapping Memory
App 20160111164 - Chen; Hong-Yan ; et al. | 2016-04-21 |
Selective word line erase in 3D non-volatile memory
Grant 9,318,206 - Dong , et al. April 19, 2 | 2016-04-19 |
Zoned erase verify in three dimensional nonvolatile memory
Grant 9,312,026 - Kochar , et al. April 12, 2 | 2016-04-12 |
Programming of drain side word line to reduce program disturb and charge loss
Grant 9,312,010 - Yuan , et al. April 12, 2 | 2016-04-12 |
Programming Of Drain Side Word Line To Reduce Program Disturb And Charge Loss
App 20160099058 - Yuan; Jiahui ; et al. | 2016-04-07 |
Techniques for programming of select gates in NAND memory
Grant 9,305,648 - Nguyen , et al. April 5, 2 | 2016-04-05 |
Read With Look-Back Combined With Programming With Asymmetric Boosting In Memory
App 20160093390 - Yuan; Jiahui ; et al. | 2016-03-31 |
Modifying Program Pulses Based On Inter-pulse Period To Reduce Program Noise
App 20160093380 - Dong; Yingda ; et al. | 2016-03-31 |
Alternating Refractive Index In Charge-Trapping Film In Three-Dimensional Memory
App 20160093636 - Pang; Liang ; et al. | 2016-03-31 |
Adaptive increase in control gate voltage of a dummy memory cell to compensate for inadvertent programming
Grant 9,299,450 - Pang , et al. March 29, 2 | 2016-03-29 |
Mitigating channel coupling effects during sensing of non-volatile storage elements
Grant RE45,953 - Dong , et al. March 29, 2 | 2016-03-29 |
Modifying program pulses based on inter-pulse period to reduce program noise
Grant 9,299,443 - Dong , et al. March 29, 2 | 2016-03-29 |
Controlling pass voltages to minimize program disturb in charge-trapping memory
Grant 9,286,987 - Dong , et al. March 15, 2 | 2016-03-15 |
Method of reducing hot electron injection type of read disturb in dummy memory cells
Grant 9,286,994 - Chen , et al. March 15, 2 | 2016-03-15 |
Controlling Pass Voltages To Minimize Program Disturb In Charge-Trapping Memory
App 20160071595 - Dong; Yingda ; et al. | 2016-03-10 |
Programming Memory With Reduced Short-Term Charge Loss
App 20160064084 - Lu; Ching-Huang ; et al. | 2016-03-03 |
Charge Redistribution During Erase In Charge Trapping Memory
App 20160064090 - Yuan; Jiahui ; et al. | 2016-03-03 |
Charge Redistribution During Erase In Charge Trapping Memory
App 20160064087 - Yuan; Jiahui ; et al. | 2016-03-03 |
Programming non-volatile storage including reducing impact from other memory cells
Grant RE45,910 - Dong , et al. March 1, 2 | 2016-03-01 |
Zoned Erase Verify in Three Dimensional Nonvolatile Memory
App 20160055918 - Kochar; Mrinal ; et al. | 2016-02-25 |
Techniques for Programming of Select Gates in NAND Memory
App 20160055911 - Nguyen; Hao ; et al. | 2016-02-25 |
Avoiding Unintentional Program Or Erase Of A Select Gate Transistor
App 20160055915 - Dong; Yingda ; et al. | 2016-02-25 |
Charge redistribution during erase in charge trapping memory
Grant 9,257,191 - Yuan , et al. February 9, 2 | 2016-02-09 |
Bias To Detect And Prevent Short Circuits In Three-Dimensional Memory Device
App 20160035426 - Yuan; Jiahui ; et al. | 2016-02-04 |
Weighted Read Scrub for Nonvolatile Memory
App 20160026410 - Avila; Chris ; et al. | 2016-01-28 |
Temperature dependent voltage to unselected drain side select transistor during program of 3D NAND
Grant 9,245,642 - Chen , et al. January 26, 2 | 2016-01-26 |
Multiple Pass Programming For Memory With Different Program Pulse Widths
App 20160019947 - Pang; Liang ; et al. | 2016-01-21 |
Reprogramming Memory With Single Program Pulse Per Data State
App 20160019948 - Pang; Liang ; et al. | 2016-01-21 |
Back gate operation with elevated threshold voltage
Grant 9,240,238 - Raghu , et al. January 19, 2 | 2016-01-19 |
Bias to detect and prevent short circuits in three-dimensional memory device
Grant 9,236,131 - Yuan , et al. January 12, 2 | 2016-01-12 |
Look Ahead Read Method For Non-Volatile Memory
App 20160005491 - Yuan; Jiahui ; et al. | 2016-01-07 |
Protective structure to prevent short circuits in a three-dimensional memory device
Grant 9,230,982 - Yuan , et al. January 5, 2 | 2016-01-05 |
Optimized configurable NAND parameters
Grant 9,229,856 - Avila , et al. January 5, 2 | 2016-01-05 |
Weak erase of a dummy memory cell to counteract inadvertent programming
Grant 9,230,676 - Pang , et al. January 5, 2 | 2016-01-05 |
Programming memory with reduced short-term charge loss
Grant 9,230,663 - Lu , et al. January 5, 2 | 2016-01-05 |
System for maintaining back gate threshold voltage in three dimensional NAND memory
Grant 9,230,656 - Avila , et al. January 5, 2 | 2016-01-05 |
Three Dimensional Nand Device With Channel Contacting Conductive Source Line And Method Of Making Thereof
App 20150380418 - Zhang; Yanli ; et al. | 2015-12-31 |
String dependent parameter setup
Grant 9,218,886 - Dusija , et al. December 22, 2 | 2015-12-22 |
Adaptive operation of three dimensional memory
Grant 9,218,890 - Avila , et al. December 22, 2 | 2015-12-22 |
Three-dimensional Non-volatile Memory Device Having A Silicide Source Line And Method Of Making Thereof
App 20150364488 - PACHAMUTHU; Jayavel ; et al. | 2015-12-17 |
Efficient Reprogramming Method For Tightening A Threshold Voltage Distribution In A Memory Device
App 20150325297 - Pang; Liang ; et al. | 2015-11-12 |
Selection of data for redundancy calculation in three dimensional nonvolatile memory
Grant 9,183,086 - Avila , et al. November 10, 2 | 2015-11-10 |
Systems and methods to avoid false verify and false read
Grant 9,183,945 - Avila , et al. November 10, 2 | 2015-11-10 |
Selection of data for redundancy calculation by likely error rate
Grant 9,177,673 - Raghu , et al. November 3, 2 | 2015-11-03 |
Weighted read scrub for nonvolatile memory
Grant 9,171,620 - Avila , et al. October 27, 2 | 2015-10-27 |
Reducing weak-erase type read disturb in 3D non-volatile memory
Grant 9,171,632 - Dong , et al. October 27, 2 | 2015-10-27 |
Neighboring Word Line Program Disturb Countermeasure For Charge-Trapping Memory
App 20150301885 - Yuan; Jiahui ; et al. | 2015-10-22 |
Efficient reprogramming method for tightening a threshold voltage distribution in a memory device
Grant 9,165,659 - Pang , et al. October 20, 2 | 2015-10-20 |
Selective memory cell program and erase
Grant RE45,754 - Dong , et al. October 13, 2 | 2015-10-13 |
Bad block reconfiguration in nonvolatile memory
Grant 9,142,324 - Raghu , et al. September 22, 2 | 2015-09-22 |
Efficient smart verify method for programming 3D non-volatile memory
Grant 9,142,298 - Dong , et al. September 22, 2 | 2015-09-22 |
Efficient smart verify method for programming 3D non-volatile memory
Grant 9,142,302 - Dong , et al. September 22, 2 | 2015-09-22 |
Selection of data for redundancy calculation by likely error rate
Grant 9,136,022 - Raghu , et al. September 15, 2 | 2015-09-15 |
Adjusting control gate overdrive of select gate transistors during programming of non-volatile memory
Grant 9,123,425 - Dong , et al. September 1, 2 | 2015-09-01 |
Adaptive operation of three dimensional memory
Grant 9,105,349 - Avila , et al. August 11, 2 | 2015-08-11 |
Write scheme for charge trapping memory
Grant 9,093,158 - Raghu , et al. July 28, 2 | 2015-07-28 |
Selection of data for redundancy calculation in three dimensional nonvolatile memory
Grant 9,092,363 - Avila , et al. July 28, 2 | 2015-07-28 |
Systems and methods for partial page programming of multi level cells
Grant 9,058,881 - Dusija , et al. June 16, 2 | 2015-06-16 |
String Dependent Parameter Setup
App 20150162088 - Dusija; Gautam A. ; et al. | 2015-06-11 |
Systems and Methods for Partial Page Programming of Multi Level Cells
App 20150162086 - Dusija; Gautam A. ; et al. | 2015-06-11 |
Write Scheme For Charge Trapping Memory
App 20150162087 - Raghu; Deepak ; et al. | 2015-06-11 |
Saw-shaped multi-pulse programming for program noise reduction in memory
Grant RE45,544 - Dong , et al. June 2, 2 | 2015-06-02 |
Detecting Programmed Word Lines Based On NAND String Current
App 20150124527 - Mui; Man L ; et al. | 2015-05-07 |
Selection of Data for Redundancy Calculation By Likely Error Rate
App 20150121157 - Raghu; Deepak ; et al. | 2015-04-30 |
Block Structure Profiling in Three Dimensional Memory
App 20150121156 - Raghu; Deepak ; et al. | 2015-04-30 |
Selection of Data for Redundancy Calculation By Likely Error Rate
App 20150117099 - Raghu; Deepak ; et al. | 2015-04-30 |
Data randomization in 3-D memory
Grant 9,013,919 - Avila , et al. April 21, 2 | 2015-04-21 |
String dependent parameter setup
Grant 9,015,407 - Dusija , et al. April 21, 2 | 2015-04-21 |
Back Gate Operation with Elevated Threshold Voltage
App 20150085574 - Raghu; Deepak ; et al. | 2015-03-26 |
Pre-charge during programming for 3D memory using gate-induced drain leakage
Grant 8,988,939 - Dunga , et al. March 24, 2 | 2015-03-24 |
Select transistor tuning
Grant 8,988,941 - Avila , et al. March 24, 2 | 2015-03-24 |
Pre-charge during programming for 3D memory using gate-induced drain leakage
Grant 8,988,937 - Dunga , et al. March 24, 2 | 2015-03-24 |
Vread bias allocation on word lines for read disturb reduction in 3D non-volatile memory
Grant 8,982,637 - Dong , et al. March 17, 2 | 2015-03-17 |
Program and read operations for 3D non-volatile memory based on memory hole diameter
Grant 8,982,626 - Dong , et al. March 17, 2 | 2015-03-17 |
Vread Bias Allocation On Word Lines For Read Disturb Reduction In 3d Non-volatile Memory
App 20150070998 - Dong; Yingda ; et al. | 2015-03-12 |
Selective Word Line Erase In 3D Non-Volatile Memory
App 20150063033 - Dong; Yingda ; et al. | 2015-03-05 |
Bad Block Reconfiguration in Nonvolatile Memory
App 20150063028 - Raghu; Deepak ; et al. | 2015-03-05 |
Bad Block Reconfiguration in Nonvolatile Memory
App 20150067419 - Raghu; Deepak ; et al. | 2015-03-05 |
Select transistor tuning
Grant 8,971,119 - Avila , et al. March 3, 2 | 2015-03-03 |
Systems and methods for partial page programming of multi level cells
Grant 8,964,467 - Dusija , et al. February 24, 2 | 2015-02-24 |
Bad block reconfiguration in nonvolatile memory
Grant 8,966,330 - Raghu , et al. February 24, 2 | 2015-02-24 |
Detecting programmed word lines based on NAND string current
Grant 8,964,480 - Mui , et al. February 24, 2 | 2015-02-24 |
Select gate materials having different work functions in non-volatile memory
Grant 8,964,473 - Dong , et al. February 24, 2 | 2015-02-24 |
Bit line current trip point modulation for reading nonvolatile storage elements
Grant 8,942,047 - Mui , et al. January 27, 2 | 2015-01-27 |
Three-dimensional NAND memory with adaptive erase
Grant 8,929,141 - Raghu , et al. January 6, 2 | 2015-01-06 |
Programming select gate transistors and memory cells using dynamic verify level
Grant 8,929,142 - Dong , et al. January 6, 2 | 2015-01-06 |
System for Maintaining Back Gate Threshold Voltage in Three Dimensional NAND Memory
App 20150003161 - Avila; Chris Nga Yee ; et al. | 2015-01-01 |
Detecting Programmed Word Lines Based On NAND String Current
App 20150003162 - Mui; Man L. ; et al. | 2015-01-01 |
Programming select gate transistors and memory cells using dynamic verify level
Grant 8,913,432 - Dong , et al. December 16, 2 | 2014-12-16 |
3D Non-Volatile Memory With Control Gate Length Based On Memory Hole Diameter
App 20140362645 - Dong; Yingda ; et al. | 2014-12-11 |
Program And Read Operations For 3D Non-Volatile Memory Based On Memory Hole Diameter
App 20140362641 - Dong; Yingda ; et al. | 2014-12-11 |
3D Non-Volatile Memory With Control Gate Length Based On Memory Hole Diameter
App 20140362642 - Dong; Yingda ; et al. | 2014-12-11 |
Compensation for sub-block erase
Grant 8,909,493 - Avila , et al. December 9, 2 | 2014-12-09 |
Adaptive Operation of Three Dimensional Memory
App 20140355345 - Avila; Chris ; et al. | 2014-12-04 |
Selection of Data for Redundancy Calculation in Three Dimensional Nonvolatile Memory
App 20140359400 - Avila; Chris ; et al. | 2014-12-04 |
Selection of Data for Redundancy Calculation in Three Dimensional Nonvolatile Memory
App 20140359398 - Avila; Chris Nga Yee ; et al. | 2014-12-04 |
Adaptive Operation of Three Dimensional Memory
App 20140355344 - Avila; Chris Nga Yee ; et al. | 2014-12-04 |
Three-dimensional NAND memory with adaptive erase
Grant 8,902,658 - Raghu , et al. December 2, 2 | 2014-12-02 |
Block structure profiling in three dimensional memory
Grant 8,902,661 - Raghu , et al. December 2, 2 | 2014-12-02 |
Write scheme for charge trapping memory
Grant 8,902,647 - Raghu , et al. December 2, 2 | 2014-12-02 |
Optimized Configurable NAND Parameters
App 20140351496 - Avila; Chris ; et al. | 2014-11-27 |
Selective word line erase in 3D non-volatile memory
Grant 8,897,070 - Dong , et al. November 25, 2 | 2014-11-25 |
Dynamic erase voltage step size selection for 3D non-volatile memory
Grant 8,891,308 - Ou , et al. November 18, 2 | 2014-11-18 |
Bit line current trip point modulation for reading nonvolatile storage elements
Grant 8,885,416 - Mui , et al. November 11, 2 | 2014-11-11 |
Dynamic erase voltage step size selection for 3D non-volatile memory
Grant 8,873,293 - Ou , et al. October 28, 2 | 2014-10-28 |
Select Gate Materials Having Different Work Functions In Non-Volatile Memory
App 20140293702 - Dong; Yingda ; et al. | 2014-10-02 |
Adjusting Control Gate Overdrive Of Select Gate Transistors During Programming Of Non-Volatile Memory
App 20140293701 - Dong; Yingda ; et al. | 2014-10-02 |
Bit Line Current Trip Point Modulation For Reading Nonvolatile Storage Elements
App 20140269083 - Mui; Man L. ; et al. | 2014-09-18 |
Programming Select Gate Transistors And Memory Cells Using Dynamic Verify Level
App 20140254283 - Dong; Yingda ; et al. | 2014-09-11 |
Optimized configurable NAND parameters
Grant 8,830,717 - Avila , et al. September 9, 2 | 2014-09-09 |
Reducing weak-erase type read disturb in 3D non-volatile memory
Grant 8,830,755 - Dong , et al. September 9, 2 | 2014-09-09 |
Data Randomization in 3-D Memory
App 20140250266 - Avila; Chris ; et al. | 2014-09-04 |
Pre-Charge During Programming For 3D Memory Using Gate-Induced Drain Leakage
App 20140247670 - Dunga; Mohan ; et al. | 2014-09-04 |
Efficient Smart Verify Method For Programming 3D Non-Volatile Memory
App 20140247662 - Dong; Yingda ; et al. | 2014-09-04 |
Reducing Weak-erase Type Read Disturb In 3d Non-volatile Memory
App 20140247659 - Dong; Yingda ; et al. | 2014-09-04 |
Select Transistor Tuning
App 20140247665 - Avila; Chris ; et al. | 2014-09-04 |
Compensation for Sub-Block Erase
App 20140247660 - Avila; Chris ; et al. | 2014-09-04 |
Efficient Smart Verify Method For Programming 3D Non-Volatile Memory
App 20140226406 - Dong; Yingda ; et al. | 2014-08-14 |
Programming Select Gate Transistors And Memory Cells Using Dynamic Verify Level
App 20140219027 - Dong; Yingda ; et al. | 2014-08-07 |
Select gate materials having different work functions in non-volatile memory
Grant 8,797,800 - Dong , et al. August 5, 2 | 2014-08-05 |
Bit Line Current Trip Point Modulation For Reading Nonvolatile Storage Elements
App 20140211568 - Mui; Man L. ; et al. | 2014-07-31 |
Optimized erase operation for non-volatile memory with partially programmed block
Grant 8,787,088 - Dutta , et al. July 22, 2 | 2014-07-22 |
Select Transistor Tuning
App 20140169095 - Avila; Chris Nga Yee ; et al. | 2014-06-19 |
Temperature based compensation during verify operations for non-volatile storage
Grant 8,755,234 - Oowada , et al. June 17, 2 | 2014-06-17 |
Systems and Methods to Avoid False Verify and False Read
App 20140153333 - Avila; Chris Nga Yee ; et al. | 2014-06-05 |
Weighted Read Scrub For Nonvolatile Memory
App 20140146609 - Avila; Chris Nga Yee ; et al. | 2014-05-29 |
Optimized Configurable NAND Parameters
App 20140149641 - Avila; Chris Nga Yee ; et al. | 2014-05-29 |
Compensation for Sub-Block Erase
App 20140133232 - Avila; Chris Nga Yee ; et al. | 2014-05-15 |
Pre-Charge During Programming For 3D Memory Using Gate-Induced Drain Leakage
App 20140112075 - Dunga; Mohan ; et al. | 2014-04-24 |
Reducing weak-erase type read disturb in 3D non-volatile memory
Grant 8,670,285 - Dong , et al. March 11, 2 | 2014-03-11 |
Reducing Weak-Erase Type Read Disturb In 3D Non-Volatile Memory
App 20140056065 - Dong; Yingda ; et al. | 2014-02-27 |
Temperature Based Compensation During Verify Operations For Non-volatile Storage
App 20140036601 - Oowada; Ken ; et al. | 2014-02-06 |
Optimized Erase Operation For Non-Volatile Memory With Partially Programmed Block
App 20140003147 - Dutta; Deepanshu ; et al. | 2014-01-02 |
Temperature based compensation during verify operations for non-volatile storage
Grant 8,582,381 - Oowada , et al. November 12, 2 | 2013-11-12 |
Nonvolatile Memory And Method For Improved Programming With Reduced Verify
App 20130279263 - Dong; Yingda ; et al. | 2013-10-24 |
Temperature Based Compensation During Verify Operations For Non-volatile Storage
App 20130223155 - Oowada; Ken ; et al. | 2013-08-29 |
Reducing Weak-Erase Type Read Disturb In 3D Non-Volatile Memory
App 20130201760 - Dong; Yingda ; et al. | 2013-08-08 |
Nonvolatile memory and method for improved programming with reduced verify
Grant 8,472,257 - Dong , et al. June 25, 2 | 2013-06-25 |
Programming non-volatile storage with fast bit detection and verify skip
Grant 8,456,915 - Chen , et al. June 4, 2 | 2013-06-04 |
Intelligent shifting of read pass voltages for non-volatile storage
Grant 8,456,911 - Yuan , et al. June 4, 2 | 2013-06-04 |
Selective Word Line Erase In 3D Non-Volatile Memory
App 20130107628 - Dong; Yingda ; et al. | 2013-05-02 |
Intelligent Shifting Of Read Pass Voltages For Non-volatile Storage
App 20120314499 - Yuan; Jiahui ; et al. | 2012-12-13 |
Selective memory cell program and erase
Grant 8,315,093 - Dong , et al. November 20, 2 | 2012-11-20 |
Nonvolatile Memory and Method for Improved Programming With Reduced Verify
App 20120243323 - Dong; Yingda ; et al. | 2012-09-27 |
Programming Non-volatile Storage With Fast Bit Detection And Verify Skip
App 20120188824 - Chen; Changyuan ; et al. | 2012-07-26 |
Programming non-volatile storage including reducing impact from other memory cells
Grant 8,218,366 - Dong , et al. July 10, 2 | 2012-07-10 |
Mitigating channel coupling effects during sensing of non-volatile storage elements
Grant 8,208,310 - Dong , et al. June 26, 2 | 2012-06-26 |
Selective Memory Cell Program And Erase
App 20120140559 - Dong; Yingda ; et al. | 2012-06-07 |
Programming non-volatile storage with fast bit detection and verify skip
Grant 8,174,895 - Chen , et al. May 8, 2 | 2012-05-08 |
Mitigating Channel Coupling Effects During Sensing Of Non-volatile Storage Elements
App 20110273935 - Dong; Yingda ; et al. | 2011-11-10 |
Programming Non-volatile Storage Includng Reducing Impact From Other Memory Cells
App 20110255345 - Dong; Yingda ; et al. | 2011-10-20 |
Saw-shaped Multi-pulse Programming For Program Noise Reduction In Memory
App 20110249504 - Dong; Yingda ; et al. | 2011-10-13 |
Extra Dummy Erase Pulses After Shallow Erase-verify To Avoid Sensing Deep Erased Threshold Voltage
App 20110242899 - Oowada; Ken ; et al. | 2011-10-06 |
Programming Non-volatile Storage With Fast Bit Detection And Verify Skip
App 20110170358 - Chen; Changyuan ; et al. | 2011-07-14 |
Partial Speed And Full Speed Programming For Non-volatile Memory Using Floating Bit Lines
App 20110051517 - Mui; Man ; et al. | 2011-03-03 |
Selective Memory Cell Program And Erase
App 20110044102 - Dong; Yingda ; et al. | 2011-02-24 |
Program Voltage Compensation With Word Line Bias Change To Suppress Charge Trapping In Memory
App 20110026331 - Dong; Yingda ; et al. | 2011-02-03 |
Dynamically Adjustable Erase And Program Levels For Non-volatile Memory
App 20110013460 - Dong; Yingda ; et al. | 2011-01-20 |
Forecasting Program Disturb In Memory By Detecting Natural Threshold Voltage Distribution
App 20100329002 - Dong; Yingda ; et al. | 2010-12-30 |
Read Operation For Memory With Compensation For Coupling Based On Write-erase Cycles
App 20100329010 - Dong; Yingda | 2010-12-30 |
Reduced Programming Pulse Width For Enhanced Channel Boosting In Non-volatile Storage
App 20100322005 - Dong; Yingda ; et al. | 2010-12-23 |
Compensating For Coupling During Read Operations In Non-volatile Storage
App 20100034022 - Dutta; Deepanshu ; et al. | 2010-02-11 |
Programming Algorithm To Reduce Disturb With Minimal Extra Time Penalty
App 20090323429 - Lee; Dana ; et al. | 2009-12-31 |
Enhanced Bit-line Pre-charge Scheme For Increasing Channel Boosting In Non-volatile Storage
App 20090290429 - Dong; Yingda ; et al. | 2009-11-26 |
Non-volatile Memory Using Multiple Boosting Modes For Reduced Program Disturb
App 20090010065 - Lutze; Jeffrey W. ; et al. | 2009-01-08 |
Method For Using Transitional Voltage During Programming Of Non-volatile Storage
App 20080291735 - Dong; Yingda ; et al. | 2008-11-27 |
Non-volatile Storage System With Transitional Voltage During Programming
App 20080291736 - Dong; Yingda ; et al. | 2008-11-27 |
Non-volatile Storage With Boosting Using Channel Isolation Switching
App 20080279008 - Dong; Yingda ; et al. | 2008-11-13 |
Source And Drain Side Early Boosting Using Local Self Boosting For Non-volatile Storage
App 20080278999 - Dong; Yingda ; et al. | 2008-11-13 |
Boosting For Non-volatile Storage Using Channel Isolation Switching
App 20080279007 - Dong; Yingda ; et al. | 2008-11-13 |
Systems For Programming Non-volatile Memory With Reduced Program Disturb By Using Different Pre-charge Enable Voltages
App 20080158991 - Hemink; Gerrit Jan ; et al. | 2008-07-03 |
Programming Non-volatile Memory With Reduced Program Disturb By Removing Pre-charge Dependency On Word Line Data
App 20080159002 - Dong; Yingda ; et al. | 2008-07-03 |
Systems For Programming Non-volatile Memory With Reduced Program Disturb By Removing Pre-charge Dependency On Word Line Data
App 20080159003 - Dong; Yingda ; et al. | 2008-07-03 |
Programming Non-volatile Memory With Reduced Program Disturb By Using Different Pre-charge Enable Voltages
App 20080159004 - Hemink; Gerrit Jan ; et al. | 2008-07-03 |
Non-volatile Storage With Early Source-side Boosting For Reducing Program Disturb
App 20080137426 - Dong; Yingda ; et al. | 2008-06-12 |
Reducing Program Disturb In Non-volatile Storage Using Early Source-side Boosting
App 20080137425 - Dong; Yingda ; et al. | 2008-06-12 |
Reducing Program Disturb In Non-volatile Memory Using Multiple Boosting Modes
App 20080123425 - Lutze; Jeffrey W. ; et al. | 2008-05-29 |
Non-volatile Memory Using Multiple Boosting Modes For Reduced Program Disturb
App 20080123426 - Lutze; Jeffrey W. ; et al. | 2008-05-29 |
Hybrid Programming Methods And Systems For Non-volatile Memory Storage Elements
App 20080084761 - Lee; Dana ; et al. | 2008-04-10 |
System For Performing Data Pattern Sensitivity Compensation Using Different Voltage
App 20080056000 - Mokhlesi; Nima ; et al. | 2008-03-06 |
System For Performing Data Pattern Sensitivity Compensation Using Different Voltage
App 20080056001 - Mokhlesi; Nima ; et al. | 2008-03-06 |
Data Pattern Sensitivity Compensation Using Different Voltage
App 20070279994 - Mokhlesi; Nima ; et al. | 2007-12-06 |
System For Performing Data Pattern Sensitivity Compensation Using Different Voltage
App 20070279995 - Mokhlesi; Nima ; et al. | 2007-12-06 |
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