| Patent | Date |
|---|
Physically unclonable function circuit having lower gate-to-source/drain breakdown voltage
Grant 11,437,082 - Chern September 6, 2 | 2022-09-06 |
One-time programmable memory device and fabrication method thereof
Grant 11,362,097 - Chern June 14, 2 | 2022-06-14 |
One-time Programmable Memory Device And Fabrication Method Thereof
App 20220181336 - Chern; Geeng-Chuan | 2022-06-09 |
Method For Fabricating Semiconductor Memory Device With Buried Capacitor And Fin-like Electrodes
App 20220181328 - Chern; Geeng-Chuan ; et al. | 2022-06-09 |
Stacked capacitor with horizontal and vertical fin structures and method for making the same
Grant 11,322,500 - Chern , et al. May 3, 2 | 2022-05-03 |
1.5-transistor (1.5T) one time programmable (OTP) memory with thin gate to drain dielectric and methods thereof
Grant 11,315,937 - Chern April 26, 2 | 2022-04-26 |
Semiconductor memory device with buried capacitor and fin-like electrodes
Grant 11,296,090 - Chern , et al. April 5, 2 | 2022-04-05 |
1.5-transistor (1.5t) One Time Programmable (otp) Memory With Thin Gate To Drain Dielectric And Methods Thereof
App 20220059551 - Chern; Geeng-Chuan | 2022-02-24 |
Stacked Capacitor With Horizontal And Vertical Fin Structures And Method For Making The Same
App 20220037332 - Chern; Geeng-Chuan ; et al. | 2022-02-03 |
Trench Capacitor Having Improved Capacitance And Fabrication Method Thereof
App 20220020844 - Chern; Geeng-Chuan ; et al. | 2022-01-20 |
Method Of Fabricating Magnetic Memory Device
App 20220020918 - Chern; Geeng-Chuan | 2022-01-20 |
Magnetic memory device with multiple sidewall spacers covering sidewall of MTJ element and method for manufacturing the same
Grant 11,217,744 - Chern January 4, 2 | 2022-01-04 |
Method For Fabricating A Metal-oxide-semiconductor Transistor
App 20210408017 - Chern; Geeng-Chuan | 2021-12-30 |
Physically Unclonable Function Circuit Having Lower Gate-to-Source/Drain Breakdown Voltage
App 20210358528 - Chern; Geeng-Chuan | 2021-11-18 |
Magnetic memory device and method for manufacturing the same
Grant 11,177,431 - Chern November 16, 2 | 2021-11-16 |
MOS transistor having lower gate-to-source/drain breakdown voltage and one-time programmable memory device using the same
Grant 11,152,381 - Chern October 19, 2 | 2021-10-19 |
Mos Transistor Having Lower Gate-to-source/drain Breakdown Voltage And One-time Programmable Memory Device Using The Same
App 20210320110 - Chern; Geeng-Chuan | 2021-10-14 |
Trench capacitor having improved capacitance and fabrication method thereof
Grant 11,139,368 - Chern , et al. October 5, 2 | 2021-10-05 |
One time programmable (OTP) bits for physically unclonable functions
Grant 11,114,140 - Chern September 7, 2 | 2021-09-07 |
Semiconductor memory device with shallow buried capacitor and fabrication method thereof
Grant 11,114,442 - Chern , et al. September 7, 2 | 2021-09-07 |
Method for fabricating split-gate non-volatile memory
Grant 11,088,155 - Chern August 10, 2 | 2021-08-10 |
One-time programmable memory device and method for operating the same
Grant 11,074,985 - Chern July 27, 2 | 2021-07-27 |
Non-volatile memory and manufacturing method for the same
Grant 11,049,947 - Chern June 29, 2 | 2021-06-29 |
Semiconductor Memory Device With Shallow Buried Capacitor And Fabrication Method Thereof
App 20210183867 - Chern; Geeng-Chuan ; et al. | 2021-06-17 |
Semiconductor Memory Device With Buried Capacitor And Fin-like Electrodes, And Fabrication Method Thereof
App 20210183868 - Chern; Geeng-Chuan ; et al. | 2021-06-17 |
Magnetic Memory Device With Multiple Sidewall Spacers Covering Sidewall Of Mtj Element And Method For Manufacturing The Same
App 20210175412 - Chern; Geeng-Chuan | 2021-06-10 |
Magnetic Memory Device And Method For Manufacturing The Same
App 20210167277 - Chern; Geeng-Chuan | 2021-06-03 |
MOFSET and method of fabricating same
Grant 10,971,595 - Chern April 6, 2 | 2021-04-06 |
Trench Capacitor Having Improved Capacitance And Fabrication Method Thereof
App 20210098566 - Chern; Geeng-Chuan ; et al. | 2021-04-01 |
Method of fabricating MOSFET
Grant 10,957,776 - Chern March 23, 2 | 2021-03-23 |
Current source using emitter region as base region isolation structure
Grant 10,950,601 - Chern March 16, 2 | 2021-03-16 |
Non-volatile memory and manufacturing method for the same
Grant 10,916,664 - Chern February 9, 2 | 2021-02-09 |
Non-volatile Memory And Manufacturing Method For The Same
App 20210005745 - CHERN; GEENG-CHUAN | 2021-01-07 |
Non-volatile memory and manufacturing method for the same
Grant 10,854,758 - Chern December 1, 2 | 2020-12-01 |
Method Of Fabricating Mosfet
App 20200287016 - CHERN; Geeng-Chuan | 2020-09-10 |
Current Source And Method Of Forming Same
App 20200273859 - CHERN; Geeng-Chuan | 2020-08-27 |
Method For Fabricating Split-gate Non-volatile Memory
App 20200251481 - Kind Code | 2020-08-06 |
Non-volatile Memory And Manufacturing Method For The Same
App 20200243551 - CHERN; Geeng-Chuan | 2020-07-30 |
Non-volatile memory cell, array and fabrication method
Grant 10,726,894 - Chern | 2020-07-28 |
Non-volatile Memory And Manufacturing Method For The Same
App 20200152649 - CHERN; GEENG-CHUAN | 2020-05-14 |
Non-volatile Memory And Manufacturing Method For The Same
App 20200152784 - CHERN; GEENG-CHUAN | 2020-05-14 |
Split-gate non-volatile memory and fabrication method thereof
Grant 10,636,801 - Chern | 2020-04-28 |
Mofset And Method Of Fabricating Same
App 20200127108 - CHERN; Geeng-Chuan | 2020-04-23 |
Split-gate Non-volatile Memory And Fabrication Method Thereof
App 20200027888 - CHERN; GEENG-CHUAN | 2020-01-23 |
Non-volatile Memory Cell, Array And Fabrication Method
App 20200027492 - CHERN; GEENG-CHUAN | 2020-01-23 |
Memory device and systems and methods for selecting memory cells in the memory device
Grant 9,595,335 - Wu , et al. March 14, 2 | 2017-03-14 |
Non-volatile floating gate memory cells
Grant 9,502,581 - Chern November 22, 2 | 2016-11-22 |
Non-volatile Floating Gate Memory Cells
App 20160013310 - Chern; Geeng-Chuan | 2016-01-14 |
Selecting Memory Cells
App 20160005477 - Wu; Tsung-Ching ; et al. | 2016-01-07 |
Selecting memory cells using source lines
Grant 9,142,306 - Wu , et al. September 22, 2 | 2015-09-22 |
Selecting Memory Cells
App 20140198571 - Wu; Tsung-Ching ; et al. | 2014-07-17 |
Integrated Circuit Including Power Diode
App 20110223729 - Chang; Paul ; et al. | 2011-09-15 |
Integrated circuit including power diode
Grant 7,964,933 - Chang , et al. June 21, 2 | 2011-06-21 |
Integrated circuit including power diode
App 20070246794 - Chang; Paul ; et al. | 2007-10-25 |
Integrated circuit including power diode
Grant 7,250,668 - Chang , et al. July 31, 2 | 2007-07-31 |
Method of forming different oxide thickness for high voltage transistor and memory cell tunnel dielectric
Grant 7,084,453 - Chern , et al. August 1, 2 | 2006-08-01 |
Integrated circuit including power diode
App 20060157815 - Chang; Paul ; et al. | 2006-07-20 |
Non-volatile floating gate memory cell with floating gates formed as spacers, and an array thereof, and a method of manufacturing
Grant 7,008,846 - Chern March 7, 2 | 2006-03-07 |
Power device having reduced reverse bias leakage current
Grant 6,979,861 - Rodov , et al. December 27, 2 | 2005-12-27 |
Semiconductor memory array of floating gate memory cells with vertical control gate sidewalls and insulation spacers
Grant 6,967,372 - Chern November 22, 2 | 2005-11-22 |
Method of forming different oxide thickness for high voltage transistor and memory cell tunnel dieletric
App 20040212007 - Chern, Geeng-Chuan ; et al. | 2004-10-28 |
Non-volatile floating gate memory cell with floating gates formed as spacers, and an array thereof, and a method of manufacturing
App 20040214393 - Chern, Geeng-Chuan | 2004-10-28 |
Method of fabricating power rectifier device to vary operating parameters and resulting device
Grant 6,765,264 - Chang , et al. July 20, 2 | 2004-07-20 |
Self aligned method of forming a semiconductor memory array of floating gate memory cells with floating gates having multiple sharp edges, and a memory array made thereby
Grant 6,750,090 - Chern June 15, 2 | 2004-06-15 |
Power diode having improved on resistance and breakdown voltage
Grant 6,743,703 - Rodov , et al. June 1, 2 | 2004-06-01 |
Power device having reduced reverse bias leakage current
App 20030222290 - Rodov, Vladimir ; et al. | 2003-12-04 |
Method of fabricating power rectifier device having a laterally graded P-N junction for a channel region
Grant 6,624,030 - Chang , et al. September 23, 2 | 2003-09-23 |
Self aligned method of forming a semiconductor memory array of floating gate memory cells with floating gates having multiple sharp edges, and a memory array made thereby
App 20030141539 - Chern, Geeng-Chuan | 2003-07-31 |
Method of forming different oxide thickness for high voltage transistor and memory cell tunnel dielectric
App 20030102504 - Chern, Geeng-Chuan ; et al. | 2003-06-05 |
Power device having vertical current path with enhanced pinch-off for current limiting
Grant 6,515,330 - Hurtz , et al. February 4, 2 | 2003-02-04 |
Power diode having improved on resistance and breakdown voltage
App 20030006473 - Rodov, Vladimir ; et al. | 2003-01-09 |
Self aligned method of forming a semiconductor memory array of floating gate memory cells with vertical control gate sidewalls and insulation spacers, and a memory array made thereby
App 20020146886 - Chern, Geeng-Chuan | 2002-10-10 |
Method of fabricating power rectifier device to vary operating parameters and resulting device
Grant 6,448,160 - Chang , et al. September 10, 2 | 2002-09-10 |
Method of fabricating power rectifier device
Grant 6,420,225 - Chang , et al. July 16, 2 | 2002-07-16 |
Self aligned method of forming a semiconductor memory array of floating gate memory cells with floating gates having multiple sharp edges, and a memory array made thereby
App 20020089014 - Chern, Geeng-Chuan | 2002-07-11 |
Method of fabricating power VLSI diode devices
App 20020076860 - Akiyama, Hidenori ; et al. | 2002-06-20 |
Method of fabricating power rectifier device to vary operating parameters and resulting device
App 20020074595 - Chang, Paul ; et al. | 2002-06-20 |
Schottky diode having increased active surface area with improved reverse bias characteristics and method of fabrication
Grant 6,404,033 - Chang , et al. June 11, 2 | 2002-06-11 |
Schottky diode having increased active surface area and method of fabrication
Grant 6,399,996 - Chang , et al. June 4, 2 | 2002-06-04 |
Schottky diode having increased forward current with improved reverse bias characteristics and method of fabrication
App 20020008237 - Chang, Paul ; et al. | 2002-01-24 |
Fabrication process for programmable and erasable MOS memory device
Grant 5,081,054 - Wu , et al. January 14, 1 | 1992-01-14 |
Programmable and erasable MOS memory device
Grant 5,066,992 - Wu , et al. November 19, 1 | 1991-11-19 |
EPROM fabrication process forming tub regions for high voltage devices
Grant 4,859,619 - Wu , et al. August 22, 1 | 1989-08-22 |
EEPROM fabrication process
Grant 4,833,096 - Huang , et al. * May 23, 1 | 1989-05-23 |
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